US20090045067A1 - Apparatus and method for processing a substrate - Google Patents
Apparatus and method for processing a substrate Download PDFInfo
- Publication number
- US20090045067A1 US20090045067A1 US12/232,516 US23251608A US2009045067A1 US 20090045067 A1 US20090045067 A1 US 20090045067A1 US 23251608 A US23251608 A US 23251608A US 2009045067 A1 US2009045067 A1 US 2009045067A1
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- substrate
- counter electrode
- side region
- electrolyte
- plating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/04—Removal of gases or vapours ; Gas or pressure control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Abstract
A method and apparatus are set forth capable of processing a substrate with a high uniformity within the surface area even for a thin feeding layer. The method comprises arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region. The substrate side region and the counter electrode side region are capable of accommodating respective electrolytes. The substrate side region and the counter electrode side region are supplied with respective electrolytes having different specific resistances. A processing current is also supplied between the substrate and the counter electrode.
Description
- This is a continuation of Ser. No. 10/854,252, filed May 27, 2004.
- 1. Field of the Invention
- The present invention relates to a method and apparatus for processing a substrate, and more specifically to a process and apparatus for electrolytically processing a substrate, such as electroplating interconnect materials such as copper on a surface of the substrate formed with fine interconnect patterns for thereby forming LSI interconnects, or removing a metal film formed on the surface by an electrolytic etching process.
- 2. Description of the Related Art
- Lately, as for an interconnect material for forming electric interconnections on a semiconductor substrate, copper having a low electric resistance and a high anti-electromigration property is replacing aluminum or aluminum alloys. Since it is difficult to form copper into an interconnect shape through a conventional anisotropic etching, which is effective for aluminum, copper interconnects are formed through a process called a “copper damascene technology” in which copper is filled inside fine recesses formed on the substrate surface. Other methods such as chemical vapor deposition (CVD) or sputtering may deposit a copper film on the whole surface of the substrate, and requires removing of unnecessary portion of copper through a chemical mechanical planarization (CMP) process or electrolytic etching process.
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FIG. 5 shows a flowchart for a conventional manufacturing process of the above described substrate W having the copper interconnects. In the first place, as shown inFIG. 5 (a), a substrate W comprising asemiconductor base 1 formed with semiconductor devices or elements is prepared, on which anoxide film 2 made of SiO2 is deposited on aconductor layer 1 a, fine recesses for interconnect such as via holes 3 orinterconnect trenches 4 are formed by a lithographic etching process, a barrier layer 5 made of TaN or the like is formed thereon, and a seed layer 7 is further formed on the barrier layer 5 as a feeder layer for electroplating. - By plating copper on the surface of the substrate W, as shown in
FIG. 5( b), acopper film 6 fills the via holes 3 or interconnecttrenches 4 as well as covers the surface of theoxide film 2. Then, thecopper film 6 and barrier layer 5 on theoxide film 2 is removed by the CMP or electrolytic etching process to substantially level the surface of thecopper film 6 filling the via holes 3 and interconnecttrenches 4 with the exposed surface of theoxide film 2. Thus, the interconnect made of thecopper film 6 is formed. - As described above, as aluminum is replaced by copper for the interconnect material, apparatuses for electroplating copper films or electrolytically etching copper films has been catching eyes of the industry.
- When forming a copper interconnect using a copper sulfide solution or a copper complex solution as plating solution and the substrate Was a cathode, a soluble anode is generally used such as an electrolytic copper or a phosphorus containing copper.
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FIG. 6 shows a general assembly of the above mentioned conventional copper plating apparatus employing a so-called “face-up” design. This plating apparatus comprises anelectroplating unit 10, and a platingsolution supply system 12 for supplying and recovering an electrolyte as a plating solution to and from theelectroplating unit 10. Theelectroplating unit 10 comprises: asubstrate holder 14 arranged elevatable and rotatable for detachably supporting a substrate W with the surface facing upward; abath forming member 16 shaped in a tapered hollow cylinder and assembled on the periphery of the substrate W supported by thesubstrate holder 14 to surround a space on the substrate W; and anelectrode head 18 arranged elevatable, rotatable, and located above thesubstrate holder 14. - The
bath forming member 16 has a smaller outer diameter at the lower end than the substrate W, and a top inner diameter larger than both the lower end thereof and the outer diameter of the electrode head 18 (the outer diameter of theporous member 22 described below). A seal portion is formed between the lower end of thebath forming member 16 and the substrate surface during operation to make a plating bath in a region (substrate side region) defined by thebath forming member 16 and the substrate surface. - The
electrode head 18 comprises ahousing 26 having a open lower end covered by a porous member ordiaphragm 22 for defining ananode chamber 24 within thehousing 26, in which ananode 20 is accommodated. Apower source 28 for supplying plating current between the seed layer 7 (shown inFIG. 5( a)) formed on a surface of the substrate W held by thesubstrate holder 14 and theanode 20. - The plating
solution supply system 12 is for reserving and supplying a plating solution (electrolyte) Q such as a copper sulfide plating solution, for example, and comprises: areservoir tank 30; a couple of platingsolution supply lines reservoir tank 30 and connected to the electroplating unit; and a couple of platingsolution discharge lines electroplating unit 10 to thereservoir tank 30. The platingsolution supply system 12 supplies the same plating solution from thereservoir tank 30 to a substrate side region which is defined between the substrate W and theporous member 22 and to an anode side region defined inside theanode chamber 24, and returns the plating solution discharged from those regions to thereservoir tank 30. - Thus, a self-controlled system is constructed capable of automatically supplying copper ions at the anode side region to compensate copper ions decreased at the substrate side region. Supply lines may be provided individually for both regions but discharged lines are returned to the same tank. The plating apparatus is mostly operated using an insoluble anode as the
anode 20. It can be also used with soluble anode which is isolated with a porous membrane called an “anode bag”. -
FIG. 7 shows another conventional plating apparatus employing a so-called “face-down” design. This plating apparatus comprises anelectrolytic plating unit 40 having asubstrate holder 42 elevatable and rotatable for detachably supporting a substrate W with the surface facing downward, and aplating vessel 44 for accommodating a plating solution, which are arranged in an above-and-below relationship. Inside theplating vessel 44, ananode chamber 50 is defined which is circumferentially partitioned by aseparation wall 46 and covered atop with a porous membrane, in which ananode 52 is arrange as a counter electrode to the substrate W at a position to confront the substrate W. Other structures are similar to the apparatus shown inFIG. 6 . This apparatus also provides a self-controlled system for automatically supplying copper ions at the counter electrode side region to compensate those decreased at the substrate side region. - As the LSIs are highly integrated, metal films such as the seed layer or a feeder layer has become progressively thin for an electrolytic processing process such as an electroplating or electrolytically etching process. As the feeder layer becomes thinner, variance of plating potential within the surface area of the substrate W becomes larger. Therefore, as shown in
FIG. 6 , a thickness of the plating film becomes larger at a position close to the feeding point to the substrate W, and becomes progressively thin at positions away from the feeding point, that is, close to the center of the substrate W. This means that uniformity of the plating characteristics within the surface area of the substrate W is lowered, and that an effective surface area or a device field ratio has become decreased for the substrate W. In the electrolytic etching process, as shown inFIG. 8 , an etching rate is large at a position close to the feeding point and smaller at positions away from the feeding point. - The present invention has been accomplished to solve the above described problems, and an object of the invention is to provide a method and apparatus for electrolytically processing a substrate in which the deposition or etching can be performed with a high uniformity within the surface area even for a thin feeding layer.
- According to one aspect of the present invention, a method for processing a substrate comprises: arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region, the substrate side region and the counter electrode side region capable of accommodating respective electrolytes; supplying the substrate side region and the counter electrode side region with respective electrolytes having different specific resistances; and supplying a processing current between the substrate and the counter electrode.
- By supplying the counter electrode side region partitioned by the membrane with an electrolyte having a possible maximum specific resistance, and the substrate side region with a normal process electrolyte, processing of the substrate can be performed with a high uniformity within the surface area of the substrate even for a thin feeder layer with indefinitely high resistance. The electrolyte supplied to the anode side region may be provided only with a function as an electrolyte capable of conducting electricity so that processing ability is not lowered.
- The membrane may comprise at least one of a porous membrane, a porous structural member, and an ion exchange membrane. The porous membrane or porous structural member comprises mutually communicating fine pores capable of maintaining electrolyte. Specifically, the porous member may be made of but is not limited to: a sintered compact of polyethylene or polypropylene; a laser worked porous member made of a Teflon (trade name) etc.; porous ceramics; sponges; and woven or non woven fabrics.
- The substrate may be formed with fine interconnect recesses for receiving a metal material through plating, and a feeder layer for feeding the substrate with a plating current, and the fine interconnect recesses has a width not more than 0.3 μm and the feeder layer has a thickness not more than 0.05 μm. The present invention is particularly effective for the feeder layer as thin as not more than 0.05 μm, when plating copper interconnections in an LSI, for example. The interconnections here are extremely fine with a width of not more than 0.3 μm.
- The substrate may be set as an anode, and the counter electrode may be set as a cathode to electroplate copper to the substrate, and the electrolyte supplied to the counter electrode side region may have a larger specific resistance than the electrolyte supplied to the substrate side region. As for the electrolyte supplied to the counter electrode side region, a dilute sulfuric acid is exemplified. It may comprise but not limited to other solutions such as an aqueous solution of copper sulfide, or a mixed solution of copper sulfide and a dilute sulfuric acid.
- The electrolyte supplied to the counter electrode side region may be a copper free electrolyte solution.
- The counter electrode may comprise an insoluble material. Although the invention is particularly effective when using an insoluble material as the counter electrode, soluble materials is applicable.
- According to another aspect of the present invention, an apparatus for processing a substrate comprises: a vessel for accommodating the substrate; a counter electrode arranged to confront the substrate; a membrane arranged between the counter electrode and the substrate to define a substrate side region and a counter electrode side region, the substrate side region and the counter electrode side region capable of accommodating respective electrolytes; electrolyte supply systems for respectively supplying the substrate side region and the counter electrode side region with respective electrolytes having different specific resistances; and a power source for supplying a processing current between the substrate and the counter electrode.
- The membrane may comprise at least one of a porous membrane, a porous structural member, and an ion exchange membrane.
- The electrolyte supply system for supplying the electrolyte to the counter electrode side region may comprise a specific resistance detector for detecting specific resistance of electrolyte and a specific resistance adjuster for adjusting specific resistance of electrolyte based on an output of the specific resistance detector. It is possible to provide an electrolyte of a regularly controlled constant specific resistance to the counter electrode side region.
- The substrate may be set as a cathode, and the counter electrode may be set as an anode, and the counter electrode may comprise a mesh-like member made of an insoluble material.
- The apparatus may further comprise a gas discharge line for discharging a gas generated at the anode. It is possible to prevent the oxygen gas from reaching the substrate to generate particles.
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FIG. 1 is a schematic diagram showing an electrolytic processing apparatus according to an embodiment of the present invention applied to an electroplating apparatus; -
FIG. 2 shows a graph of a relationship between a location in the substrate surface and a film thickness for a plating process using the apparatus shown in theFIG. 1 and a conventional apparatus; -
FIG. 3 shows a schematic diagram of an electrolytic processing apparatus according to another embodiment of the present invention applied to an electrolytic etching apparatus; -
FIG. 4 shows a schematic diagram of an electrolytic processing apparatus according to another embodiment of the present invention applied to an electroplating apparatus; -
FIG. 5 is a schematic diagram of showing a process of forming a copper interconnect; -
FIG. 6 is a schematic diagram showing the conventional electroplating apparatus; -
FIG. 7 is a schematic diagram showing another conventional electroplating apparatus; and -
FIG. 8 shows a graph showing a relationship between the plated film thickness and a location within the substrate surface when plating and etching by using conventional apparatus. - The embodiment of the present invention will be described with reference to the attached drawings. The same or corresponding structures with those in the conventional apparatus shown in
FIG. 6 orFIG. 7 are designated with the same numerals and the explanation will be omitted. -
FIG. 1 shows an electrolytic processing apparatus according to an embodiment of the present invention applied to an electroplating apparatus. As shown inFIG. 1 , the plating apparatus comprises anelectroplating unit 10 and a couple ofelectrolyte supply systems electroplating unit 10. - The
electroplating unit 10 comprises asubstrate holder 14, abath forming member 16 shaped in a tapered hollow cylinder, and anelectrode head 18. Thebath forming member 16 has a smaller outer diameter at the lower end than the substrate W, and a top inner diameter larger than both the lower end thereof and the outer diameter of the electrode head 18 (the outer diameter of theporous member 22 described below). A seal portion is formed between the lower end of thebath forming member 16 and the substrate surface during operation to make a plating bath in a region (substrate side region) defined by thebath forming member 16 and the substrate surface. - The
electrode head 18 comprises ahousing 26 having a open lower end covered by a porous member ordiaphragm 22 for defining ananode chamber 24 within thehousing 26, in which ananode 20 is accommodated. Apower source 28 for supplying plating current between the seed layer 7 (shown inFIG. 5( a)) formed on a surface of the substrate W held by thesubstrate holder 14 and theanode 20. - The
porous member 22 is made of a porous membrane or a porous structural member in the embodiment and can be replaced by an ion exchange membrane. The porous membrane or porous structural member comprises mutually communicating fine pores capable of maintaining electrolyte. Specifically, theporous member 22 may be made of but is not limited to: a sintered compact of polyethylene or polypropylene; a laser worked porous member made of a Teflon (trade name) etc.; porous ceramics; sponges; and woven or non woven fabrics. - One of the
electrolyte supply systems 12 a is for supplying a plating solution (processing liquid) Q1 such as a copper sulfide plating solution to a substrate side region, which is defined between the substrate W held by thesubstrate holder 14 and theporous member 22. Theelectrolyte supply systems 12 a comprises: areservoir tank 30 a for accommodating a plating solution Q1; a platingsolution supply line 32 a and a platingsolution discharge line 36 a extending from thereservoir tank 30 a and connected to the substrate side region. - Another
electrolyte supply system 12 b is for supplying an electrolyte solution (electrolyte) Q2 free of copper such as a dilute sulfuric acid to an anode side region (counter electrode side region), which is partitioned by theporous member 22 and defined within theanode chamber 24. Theelectrolyte supply system 12 b comprises: areservoir tank 30 b for accommodating an electrolyte solution Q2; a platingsolution supply line 32 b and a platingsolution discharge line 36 a extending from the reservoir tank and connected to thehousing 26. - The electrolyte Q2 has a specific resistance (electric conductivity) ρ2 larger than the specific resistance ρ1 of the plating solution Q1, as expressed by ρ2>ρ1.
- The
anode 20 is comprised of a mesh-like member made of an insoluble material such as an insoluble metal such as platinum or titanium, or a base metal plated with platinum etc. such as a titanium mesh plate coated with iridium oxide, for example. By using the insoluble electrode, there is no need of exchanging the electrode, and by using the mesh-like member, the plating solution or generated gases can flow through the electrode. - When using an insoluble material for the
anode 20, oxygen gas is generated at the surface of theanode 20 during operation. Agas discharge line 60 is connected to the top wall of thehousing 26, in this embodiment, for exhausting accumulated gases in theanode chamber 24, which is provided with avacuum pump 62. The vacuum pump evacuates the oxygen gas to prevent it from reaching the substrate W to generate particles. The pressure within theanode chamber 24 is preferably controlled at a preset value by a feedback control within the process. - In the
electrolyte supply system 12 b, aspecific resistance detector 64 for detecting the specific resistance of the electrolyte Q2 within thereservoir tank 30 b and aspecific resistance adjuster 66 for adjusting the specific resistance of electrolyte Q2 based on the detected signal by thespecific resistance detector 64 are provided. These devices make it possible to provide an electrolyte Q2 of a regularly controlled constant specific resistance to the interior (counter electrode side region) of theanode chamber 24. When plating copper, a 0.03-0.05% phosphorus containing copper can be used as theanode 20 to suppress generation of slimes. - One exemplified process using the electroplating apparatus is described for filling copper in via holes 3 and
interconnect trenches 4 formed on a surface of the substrate W as shown inFIG. 5( a) andFIG. 5( b). - In the first place, as shown in
FIG. 5 (a), the substrate W is prepared, on which fine recesses for interconnect such as via holes 3 orinterconnect trenches 4 are formed in theoxide film 2, and a barrier layer 5 made of TaN etc. and a seed layer 7 as a feeder layer for electroplating are formed in turn. Since the present invention is particularly effective for the seed layer as thin as not more than 0.05 μm, when plating copper interconnections in an LSI, for example. The interconnections here are extremely fine with a width of not more than 0.3 μm (shown inFIG. 6( c)). - The substrate W is supported by the
substrate holder 14 with the surface facing upward and is elevated to a position at which the periphery of the substrate W is made to pressure contact with thebath forming member 16 to liquid tightly seal there. Theelectrode head 18 readily accommodating the electrolyte solution Q2 within theanode chamber 24 is lowered until the distance between the upper (front) surface of the substrate W and the lower surface of theporous member 22 is a predetermined value. - At this state, a predetermined amount of plating solution Q1 is supplied or circulated to the substrate side region defined between the substrate W and the
electrode head 18 and surrounded by thebath forming member 16. At the same time, the electrolyte Q2 contained in the anode side region partitioned by theporous member 22 within theanode chamber 24 is supplied to the area above the substrate W by pressurizing inside theanode chamber 24 or releasing the air tightness of theanode chamber 24. By applying a plating voltage between the seed layer 7 of the substrate W and theanode 20 with thepower source 28 to supply plating current and by rotating the substrate W together withelectrode head 18 as is necessary, electroplating is performed on the surface of the substrate W. - As described above, the anode side region (counter electrode side region) partitioned by the
porous member 22 is supplied with the electrolyte Q2 with a maximum specific resistance ρ2 as possible, and by supplying the substrate side region with an ordinary plating solution Q1, it is possible to uniformly plate the substrate W even the seed layer 7 has a resistance indefinitely high. Therefore, while the conventional process provides a larger thickness film at the periphery close to the feed point than the central area, the present invention can deposit a uniform thickness film on the whole surface of the substrate W. Thus, the present invention can enhance uniformity within the surface area to prevent decrease of an effective surface area or device field ratio within the substrate surface. - The electrolyte Q2 supplied to the anode side region may be provided only with a function as an electrolyte capable of conducting electricity so that the throughput or processing ability of the plating apparatus is not lowered.
- After plating a predetermined time to fill copper within the via holes or
interconnect trenches 4 as well as to deposit acopper film 6 on theoxide film 2, application of plating voltage between the seed layer 7 andanode 20 is stopped to finish the plating process. Then, theelectrode head 18 is elevated, thesubstrate holder 14 is lowered, and the substrate surface after plating is cleaned with deionized water etc. and is dried. Then, the substrate W is transferred to the next process stage. -
FIG. 3 shows another embodiment of the present invention applied to an electrolytic etching apparatus. The difference between this embodiment and that shown inFIG. 1 is that the electrolyte supply system (plating solution supply system) 12 a shown inFIG. 1 is replaced by an electrolyte supply system (etching solution supply system) 12 c comprising areservoir tank 30 c, an etchingsolution supply line 32 c, and an etchingsolution discharge line 36 c for supplying etching solution Q3 such as a phosphoric acid solution. Another difference is that theelectroplating unit 10 is replaced by anelectrolytic etching unit 70 comprising acathode 74 provided within acathodic chamber 72 of theelectrode head 18, so that power is supplied from thepower source 28 between the substrate W as an anode and thecathode 74 to perform etching of the substrate W. -
FIG. 4 shows a processing apparatus according to another embodiment of the present invention applied to an electroplating apparatus. The electroplating apparatus utilizes anelectroplating unit 40 having asubstrate holder 42 and aplating vessel 44 arranged in an above-and-below relationship. Inside the platingvessel 44, ananode chamber 50 is defined which is circumferentially partitioned by aseparation wall 46 and covered atop with aporous membrane 48, in which ananode 52 is provided as a counter electrode to confront the substrate W. In the embodiment, a 0.03-0.05% phosphorus containing copper is used as theanode 52 to suppress generation of slimes. - The plating solution Q1 is supplied through the
electrolyte supply system 12 a into the interior of the platingvessel 44 from the bottom of the region surrounded by the outer wall of the platingvessel 44 and theseparation wall 46 of theanode chamber 50, and overflows the platingvessel 44 to return to thereservoir tank 30 a through thereturn line 36 a to thereby be circulated. The electrolyte Q2 is supplied to theanode chamber 50 from thereservoir tank 30 b through thesupply line 32 b through the center of the bottom and is discharged from the peripheral area of the bottom of the anode chamber through thedischarge line 36 b to return to thereservoir tank 30 b to be circulated. Other structures are the same as that shown inFIG. 1 . - In this embodiment, the substrate W formed with a seed layer 7 as a feeder layer is supported by the
substrate holder 42 with the surface facing downward, is lowered below the top of the platingvessel 44 until it covers a part of the top opening of the platingvessel 44, and is halted there. - At this state, the plating solution Q1 is supplied to the substrate side region partitioned by the
separation wall 46 andmembrane 48, that is, an area within the platingvessel 44 except for theanode chamber 50, via theelectrolyte supply system 12 a. Theelectrolyte supply system 12 a contains and supplies a plating solution Q1 such as a copper sulfide plating solution. Concurrently, the electrolyte Q2 is supplied and circulated to the anode side region within theanode chamber 50, which is defined by theseparation wall 46 and themembrane 48, via theelectrolyte supply system 12 b. Theelectrolyte supply system 12 b contains and supplies an electrolyte Q2 such as dilute sulfuric acid. At this state, plating voltage is applied by thepower source 28 between the seed layer 7 and theanode 52 to supply plating current, and the substrate W is rotated as is necessary, to thereby electroplate the surface of the substrate W. After a predetermined time of operation, plating is finished. - In the above embodiment, copper is used as the interconnect material. However, instead of copper, any copper alloys, silver, or silver alloys can be used.
- In the embodiment of the present invention, the counter electrode side region partitioned by the
membrane
Claims (11)
1. A method for processing a substrate comprising:
arranging a counter electrode and said substrate to confront each other;
providing a membrane between said counter electrode and said substrate to define a substrate side region and a counter electrode side region, said substrate side region and said counter electrode side region capable of accommodating respective electrolytes;
supplying said substrate side region and said counter electrode side region with respective electrolytes having different specific resistances; and
supplying a processing current between said substrate and said counter electrode.
2. The method of claim 1 , wherein said membrane comprises at least one of a porous membrane, a porous structural member, and an ion exchange membrane.
3. The method of claim 1 , wherein said substrate is formed with fine interconnect recesses for receiving a metal material through plating, and a feeder layer for feeding said substrate with a plating current, said fine interconnect recesses having a width not more than 0.3 μm and said feeder layer having a thickness not more than 0.05 μm.
4. The method of claim 3 , wherein said substrate is set as an anode, and said counter electrode is set as a cathode to electroplate copper to said substrate, and wherein said electrolyte supplied to said counter electrode side region has a larger specific resistance than said electrolyte supplied to said substrate side region.
5. The method of claim 4 , wherein said electrolyte supplied to said counter electrode side region is a copper free electrolyte solution.
6. The method of claim 1 , wherein said counter electrode comprises an insoluble material.
7. An apparatus for processing a substrate comprising:
a vessel for accommodating said substrate;
a counter electrode arranged to confront said substrate;
a membrane arranged between said counter electrode and said substrate to define a substrate side region and a counter electrode side region, said substrate side region and said counter electrode side region capable of accommodating respective electrolytes;
electrolyte supply systems for respectively supplying said substrate side region and said counter electrode side region with respective electrolytes having different specific resistances; and
a power source for supplying a processing current between said substrate and said counter electrode.
8. The apparatus of claim 7 , wherein said membrane comprises at least one of a porous membrane, a porous structural member, and an ion exchange membrane.
9. The apparatus of claim 7 , wherein said electrolyte supply system for supplying said electrolyte to said counter electrode side region comprises a specific resistance detector for detecting specific resistance of electrolyte and a specific resistance adjuster for adjusting specific resistance of electrolyte based on an output of said specific resistance detector.
10. The apparatus of claim 7 , wherein said substrate is set as a cathode, and wherein said counter electrode is set as an anode, and wherein said counter electrode comprises a mesh-like member made of an insoluble material.
11. The apparatus of claim 10 , further comprising a gas discharge line for discharging a gas generated at said anode.
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US12/232,516 US20090045067A1 (en) | 2003-05-30 | 2008-09-18 | Apparatus and method for processing a substrate |
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JP2003154809A JP2004353061A (en) | 2003-05-30 | 2003-05-30 | Electrolysis method and apparatus |
US10/854,252 US20050000820A1 (en) | 2003-05-30 | 2004-05-27 | Apparatus and method for processing a substrate |
US12/232,516 US20090045067A1 (en) | 2003-05-30 | 2008-09-18 | Apparatus and method for processing a substrate |
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Cited By (1)
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US20100308473A1 (en) * | 2007-10-26 | 2010-12-09 | Centre Nat De La Recherche Scientifique | Method for making an electrically conducting mechanical interconnection member |
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JP2007291419A (en) * | 2006-04-21 | 2007-11-08 | Nec Electronics Corp | Plating treatment device |
JP6222145B2 (en) * | 2015-03-11 | 2017-11-01 | トヨタ自動車株式会社 | Metal film forming apparatus and film forming method |
JP2020097764A (en) * | 2018-12-18 | 2020-06-25 | トヨタ自動車株式会社 | Film forming device, and method of forming metal film using the same |
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US6257920B1 (en) * | 1999-06-25 | 2001-07-10 | Itt Manufacturing Enterprises, Inc. | Cable retention clip |
US6458262B1 (en) * | 2001-03-09 | 2002-10-01 | Novellus Systems, Inc. | Electroplating chemistry on-line monitoring and control system |
US20030089615A1 (en) * | 2001-01-17 | 2003-05-15 | Basol Bulent M. | Method and system to provide electrical contacts for electrotreating processes |
US6632335B2 (en) * | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
-
2003
- 2003-05-30 JP JP2003154809A patent/JP2004353061A/en active Pending
-
2004
- 2004-05-27 US US10/854,252 patent/US20050000820A1/en not_active Abandoned
-
2008
- 2008-09-18 US US12/232,516 patent/US20090045067A1/en not_active Abandoned
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US6176992B1 (en) * | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
US6257920B1 (en) * | 1999-06-25 | 2001-07-10 | Itt Manufacturing Enterprises, Inc. | Cable retention clip |
US6224737B1 (en) * | 1999-08-19 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | Method for improvement of gap filling capability of electrochemical deposition of copper |
US6632335B2 (en) * | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
US20030089615A1 (en) * | 2001-01-17 | 2003-05-15 | Basol Bulent M. | Method and system to provide electrical contacts for electrotreating processes |
US6458262B1 (en) * | 2001-03-09 | 2002-10-01 | Novellus Systems, Inc. | Electroplating chemistry on-line monitoring and control system |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100308473A1 (en) * | 2007-10-26 | 2010-12-09 | Centre Nat De La Recherche Scientifique | Method for making an electrically conducting mechanical interconnection member |
US8178416B2 (en) * | 2007-10-26 | 2012-05-15 | Centre National De La Recherche Scientifique | Method for making an electrically conducting mechanical interconnection member |
Also Published As
Publication number | Publication date |
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JP2004353061A (en) | 2004-12-16 |
US20050000820A1 (en) | 2005-01-06 |
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