US20090115441A1 - Probe card and temperature stabilizer for testing semiconductor devices - Google Patents
Probe card and temperature stabilizer for testing semiconductor devices Download PDFInfo
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- US20090115441A1 US20090115441A1 US12/353,082 US35308209A US2009115441A1 US 20090115441 A1 US20090115441 A1 US 20090115441A1 US 35308209 A US35308209 A US 35308209A US 2009115441 A1 US2009115441 A1 US 2009115441A1
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- temperature
- probe
- probe card
- testing
- needles
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/44—Modifications of instruments for temperature compensation
Definitions
- the invention is directed in general to a device for testing semiconductor devices and, more specifically, to a probe card and temperature stabilizer for testing semiconductor devices.
- wafer probing apparatus typically include a prober/tester that is used in conjunction with a separate probe card.
- the probe card which is a printed circuit board (PCB)
- PCB printed circuit board
- the probe card includes a ring assembly and probing needles that engage contact pads on a semiconductor chip that is to be tested.
- the probing needles are mechanically connected to the contact pads.
- Wafer probe apparatuses do have problems associated with their use.
- One problematic area involves the very thin probe needles that engage the contact pads of the semiconductor chip. Due to the fact that they are extremely thin (about 76.2 microns or less), they are highly susceptible to alignment issues between the probe card and wafer probe pads associated with high temperature wafer testing. If the needle changes too much in response to a temperature change, it can become misaligned. This can have serious repercussions on the accuracy of the readings, or it can cause the needle to over scrub the semiconductor chip, which can result in irreparable damage to the chip.
- Temperature variations can also be introduced during the testing process or when the needle is cleaned during the operation of probing of the semiconductor chips. In such instances, misalignment may occur. To compensate for this, additional testing time must be taken to allow the needle to re-adjust to the temperature change. Sometimes the needle properly re-aligns, and sometimes it does not. This adds additional time to an already lengthy testing process, which further decreases product output productivity. Moreover, any chips that are damaged due to over scrubbing by the probe needles have to be discarded, thereby decreasing product yields as well.
- the invention in one embodiment, provides a semiconductor testing apparatus.
- the apparatus comprises a probe card having probe needles associated therewith.
- a temperature stabilizer element is couplable to the probe card.
- the temperature stabilizer is configured to either raise or lower a temperature of the probe needles to reduce their movement.
- the invention provides a system for testing a semiconductor device.
- the system comprises a prober configured to receive a probe card therein.
- the probe card is configured to be received in the prober and includes a plurality of contact pads located on a surface thereof.
- the probe card further includes probe needles that are located under the surface on which the contact pads are located.
- a temperature stabilizer element is coupled to the probe card and is configured to either raise or lower a temperature of the probe needles.
- the system further comprises a tester comprising a testing head that has probes located on it and each of the probes is orientable to engage a different contact pad of the probe card and a control module that is electrically coupled to the testing head that controls an operation of the probes.
- the invention provides a method of fabricating a semiconductor device.
- the method comprises providing an integrated circuit (IC) and testing the IC.
- the testing step comprises placing the IC in a prober, placing a probe card in the prober.
- the probe card has a plurality of contact pads located on its surface that are electrically connected to corresponding probe needles located under the probe card.
- the probe needles are brought into contact with contact pads located on the IC.
- a tester is positioned over the probe card and includes a testing head having probes located thereon. The probes are positioned onto different contact pads of the probe card and a control module that is electrically coupled to the testing head to test the IC is used to control the testing process.
- the method of testing further includes adjusting a temperature of the probe needles to reduce movement of the probe needles by applying a voltage to a temperature stabilizer element that is coupled to the probe card.
- the temperature stabilizer element is configured to provide either heat or cold to the probe card upon a change in the polarity of the applied voltage.
- FIG. 1 illustrates a semiconductor device testing apparatus by the invention
- FIG. 2 illustrates an embodiment of a temperature stabilizing element of the invention
- FIG. 3 illustrates an embodiment of a controller that can be used in the invention.
- FIG. 4 illustrates a prober and tester system in which the testing apparatus may be employed to test a semiconductor device
- FIG. 5 illustrates the implementation of the testing apparatus with a semiconductor device
- FIG. 6 illustrates the implementation of the testing apparatus with an IC.
- FIG. 1 illustrates one embodiment of a semiconductor testing apparatus 100 of the invention.
- This embodiment includes a probe card 105 .
- the probe card 105 may be of conventional design. In such embodiments, the probe card 105 will include multiple levels of circuits traces located between multiple layers of the probe card 105 . It will also have a plurality of contact pads 110 located on its surface.
- the probe card 105 further includes a ceramic ring 115 .
- Probe needles 120 are located underneath the probe card 105 and are supported by the ceramic ring 115 and attached to the ceramic ring 115 with an epoxy 122 , as shown.
- Various probe needle extensions 123 extend through the ceramic ring 115 and connect to individual probe needles 120 .
- the probe needle extensions 123 are connected to the probe card 105 at a solder point 124 .
- a conductive trace which is not shown, extends from each of the solder points 124 to the individual contact pads, thereby providing electrical connection of the probe needles 120 to the different contact pads 110 .
- the probe needles 120 are brought into contact with an IC 125 , which in this embodiment, does not form a part of the semiconductor testing apparatus 100 .
- the semiconductor testing apparatus 100 may include a stiffener 130 that is couplable to the probe card 105 .
- the stiffener 130 is used to minimize flex in the probe card 105 , and it may be of conventional design.
- the apparatus 100 further includes a temperature stabilizing element 135 that is thermally coupled to the probe needles 120 .
- the temperature stabilizing element 135 is coupled to the stiffener 130 , which in turn is thermally coupled to the probe needles 120 by way of the ceramic ring 115 .
- the temperature stabilizing element 135 may have sufficient stiffness such that the stiffener 130 is not needed. In such instances, the temperature stabilizing element 135 may be coupled directly to the probe card 105 .
- the temperature stabilizer 135 is thermally coupled to the probe needles 120 , such that a change of temperature in the temperature stabilizer 135 is applied to and effects a temperature change of the probe needles 120 .
- the temperature stabilizing element 135 is couplable to the stiffener 130 .
- the temperature stabilizing element 135 and the stiffener 130 may form a single unit.
- the temperature stabilizing element 135 is configured to either raise or lower a temperature of the probe needles 120 to reduce their movement.
- the apparatus 100 may also include a heat sink 140 .
- the heat sink may be couplable to the temperature stabilizing element 135 .
- the heat sink 140 draws heat from the temperature stabilizing element 135 and increases its cooling efficiency.
- the heat sink may be integrally formed with the temperature stabilizing element 135 .
- FIG. 2 illustrates one embodiment of a temperature stabilizing element 200 of the invention.
- the temperature stabilizing element 200 is comprised of a series of P doped and N doped nodes 210 .
- One end of the nodes 210 is electrically coupled in series by a segmented conductive layer 215 , while their opposing ends are electrically coupled by an un-segmented conductive layer 220 , which is electrically connected to the direct current source 205 by conductive wires 235 .
- the nodes 210 may be an appropriately doped bismuth-telluride semiconductor material.
- the nodes 210 are located between opposing ceramic plates 225 and 230 .
- the ceramic plates 225 and 230 add rigidity and the necessary electrical insulation.
- the temperature stabilizing element 200 of this embodiment is based on the Peltier Effect where DC applied across two dissimilar materials causes a temperature differential. As the electrons move from the P type material to the N type material through an electrical connector, the electrons jump to a higher energy state absorbing thermal energy (cold side). Continuing through the lattice of material, the electrons flow from the N type material to the P type material through an electrical connector, dropping to a lower energy state and releasing energy as heat to the heat sink (hot side).
- Thermoelectric devices such as the one illustrated in FIG. 2 can, therefore, be used to heat and to cool, depending on the direction of the current.
- the element illustrated in FIG. 2 may be a Peltier diode, which is commercially available.
- the temperature stabilizing element 200 may be a thermoelectric element.
- the thermoelectric element may be a heater/cooling fan combination.
- the heat sink may not be necessary or it may be integrally formed with or coupled to the heater/cooling fan.
- the thermoelectric element is configured to provide either heat or cold to a probe card, depending on the direction (or polarity) of a current supplied by a direct current source (DC) 205 .
- DC direct current source
- the ability to control the amount of heat or cold applied to the probe needles 120 allows for better control over their movement.
- a desired temperature range that reduces the movement of the probe needles 120 can be targeted and the temperature stabilizing element can then be used to keep the probe needles 120 , within that temperature range. This, in turn, would reduce the amount of movement of the probe needles 120 caused by large temperature fluctuations and reduce the amount of probe needle 120 misalignment and over-scrubbing.
- the testing apparatus of the invention may also include a controller 300 , as illustrated in FIG. 3 , with continued reference to FIG. 1 .
- the controller 300 can be used to control the temperature stabilizer element 305 and keep the probe needles 120 within the targeted temperature range.
- the controller 300 comprises a comparator/driver 310 that is connected to DC power supply Vss and Vdd, as indicated.
- a temperature set element 315 is electrically coupled to the comparator/driver 310 and to a DC source, as indicated. It is configured to provide a desired temperature range at which the probe needles 120 are to be maintained. In effect, it functions as a temperature governor by providing a defined temperature range of operation for the probe needles 120 .
- the temperature set element 315 may be a variable resistor, a potentiometer, or similar device.
- the comparator/driver 310 is also electrically coupled to a thermocouple 320 .
- the thermocouple 320 provides an operating temperature of the ceramic ring 115 to the comparator/drive 310 . In one embodiment, it may be necessary to scale the voltage used to operate the thermocouple 320 up or down. In such embodiments, the controller 300 may also include a voltage scaling unit 325 that is coupled to the comparator/driver 310 .
- thermocouple 320 In operation, a temperature of a ceramic ring 115 to which the probe needles 120 are attached is read by the thermocouple 320 .
- the thermocouple 320 may operate on a millivolt range.
- the voltage scaling unit 325 will scale the voltage up such that the comparator/driver 310 may be able to read the signal.
- the comparator/driver 310 will compare the temperature of the ceramic ring 115 provided by the thermocouple 320 to the set temperature provided by the temperature set element 315 . If the temperature is outside the set temperature, the comparator/driver 310 will adjust the voltage applied to the temperature stabilizer element 305 to cause it to either provide heat or cold to the probe needles 120 to bring their temperature into the set range.
- FIG. 4 illustrates a system for testing a semiconductor device.
- the system comprises a prober 405 that includes a probe card pan 410 and which may be of conventional design.
- the pan 410 is configured to receive the probe card 105 of FIG. 1 .
- the probe card 105 includes the plurality of contact pads 110 and the probe needles, which cannot be seen in this view.
- the stiffener 130 , temperature stabilizer element 135 and heat sink 140 of FIG. 1 are schematically shown as a single module 415 .
- the system 400 of the invention further includes a tester 420 that comprises a testing head 425 that has probes 430 located thereon wherein each of the probes 430 can be oriented to engage a different contact pad 110 of the probe card 105 .
- the testing head 425 is mechanically lowered such that each of the probes 430 contacts the correct contact pad 110 .
- the tester 420 also comprises a control module 435 that is electrically coupled to the testing head 425 and controls the testing operation of the semiconductor device.
- the control module 435 may be comprised of a number of IC boards 440 and may include the controller 300 of FIG. 3 . It should be noted that both the prober 405 and tester 420 may be of conventional design and are commercially available from a number of suppliers.
- FIG. 5 illustrates an enlarged view of a testing apparatus 500 provided by the invention.
- the testing apparatus 500 is engaged with a contact pad 505 of a semiconductor device 510 .
- the test apparatus 500 includes the probe card 105 , the stiffener 130 , the temperature stabilizing element 135 , and the heat sink 140 of FIG. 1 .
- FIG. 5 further illustrates in a general way, how the probe 430 of the tester 420 ( FIG. 4 ) makes electrical contact with the contact pad 110 .
- a conductive trace 515 located within the probe card 105 provides a conductive path from the contact pad 110 to the solder point 124 .
- the probe needle extension 124 extends from the solder point 124 and makes electrical connection with the probe needle 120 by way of a conductive trace 520 that extends through the ceramic ring 115 and epoxy 122 .
- the probe needle 120 contacts the contact pad 505 , as shown. Thus, electrical connection is made between the probe 430 and the semiconductor device 510 .
- the contact pad 505 is “scrubbed” by the probe needle 120 to remove a protective oxide coating on the contact pad 505 . This is done to insure good electrical contact between the probe needle 120 and the contact pad 505 . If the temperature of probe card 105 , and thus the probe needle 120 , has fluctuated enough to cause misalignment of the probe needle 120 , the probe needle 120 may over scrub or miss the contact pad 505 altogether. In either case, the over scrubbing can irreparably damage the semiconductor device 510 . However, with the invention the potential for any damage is reduced because the temperature stabilizing element 135 can be used to maintain a temperature of the probe needle 120 within a set range, which reduces the amount of movement and misalignment of the probe needle 120 .
- FIG. 6 schematically illustrates a method of testing an IC (e.g., semiconductor device 510 , FIG. 5 ) that is located on a wafer. Since the components are the same as those discussed in FIG. 5 , the same reference will be used.
- the IC 510 is provided, and it and the probe card 105 are positioned within the prober 405 ( FIG. 4 ), as discussed above.
- the probe needles 120 are brought into contact with the pads 505 located on the IC 510 and the prober 430 is then brought into contact with contact pad 110 located on the probe card 105 .
- the testing may then be conducted in a way known to those who are skilled in the art.
- the temperature of the probe card 105 may be adjusted in the manner described above to reduce movement of the probe needles 120 by applying a voltage to the temperature stabilizer element 135 to provide either heat or cold to the probe needles 120 , depending on the direction of the current.
Abstract
One aspect of the invention provides an apparatus that includes a probe card [105] having probe needles [120] associated therewith. A temperature stabilizer element [135] is couplable to the probe card [105]. The temperature stabilizer [135] is configured to either raise or lower a temperature of the probe needles [120] to reduce movement of the probe needles [120].
Description
- This application is a continuation of application Ser. No. 11/383,866 filed May 17, 2006, the contents of which are herein incorporated by reference in its entirety.
- The invention is directed in general to a device for testing semiconductor devices and, more specifically, to a probe card and temperature stabilizer for testing semiconductor devices.
- The pursuit of ensuring high quality product yield within the semiconductor manufacturing industry is an ongoing endeavor. To that end, the industry expends significant amounts of time and money to methodically test as many completed semiconductor devices as possible to ensure consistent operability. One way in which they accomplish these tests is by the use of a wafer probing apparatus. These wafer probes typically include a prober/tester that is used in conjunction with a separate probe card. The probe card, which is a printed circuit board (PCB), has contact pads on a surface that are engaged by pogo pins of the tester. The probe card includes a ring assembly and probing needles that engage contact pads on a semiconductor chip that is to be tested. The probing needles are mechanically connected to the contact pads. Thus, when the pogo pins engage the contact pads of the probe card, electrical current can be applied to different contact pads of the semiconductor chip to test different areas of the chip to ensure its full operability.
- Wafer probe apparatuses do have problems associated with their use. One problematic area involves the very thin probe needles that engage the contact pads of the semiconductor chip. Due to the fact that they are extremely thin (about 76.2 microns or less), they are highly susceptible to alignment issues between the probe card and wafer probe pads associated with high temperature wafer testing. If the needle changes too much in response to a temperature change, it can become misaligned. This can have serious repercussions on the accuracy of the readings, or it can cause the needle to over scrub the semiconductor chip, which can result in irreparable damage to the chip.
- Temperature variations can also be introduced during the testing process or when the needle is cleaned during the operation of probing of the semiconductor chips. In such instances, misalignment may occur. To compensate for this, additional testing time must be taken to allow the needle to re-adjust to the temperature change. Sometimes the needle properly re-aligns, and sometimes it does not. This adds additional time to an already lengthy testing process, which further decreases product output productivity. Moreover, any chips that are damaged due to over scrubbing by the probe needles have to be discarded, thereby decreasing product yields as well.
- Accordingly, what is needed is an apparatus and method of testing semiconductor devices that avoids the disadvantages associated with the above-described testing devices.
- The invention, in one embodiment, provides a semiconductor testing apparatus. In this embodiment, the apparatus comprises a probe card having probe needles associated therewith. A temperature stabilizer element is couplable to the probe card. The temperature stabilizer is configured to either raise or lower a temperature of the probe needles to reduce their movement.
- In yet another embodiment, the invention provides a system for testing a semiconductor device. In this embodiment, the system comprises a prober configured to receive a probe card therein. The probe card is configured to be received in the prober and includes a plurality of contact pads located on a surface thereof. The probe card further includes probe needles that are located under the surface on which the contact pads are located. A temperature stabilizer element is coupled to the probe card and is configured to either raise or lower a temperature of the probe needles. The system further comprises a tester comprising a testing head that has probes located on it and each of the probes is orientable to engage a different contact pad of the probe card and a control module that is electrically coupled to the testing head that controls an operation of the probes.
- In yet another embodiment, the invention provides a method of fabricating a semiconductor device. The method comprises providing an integrated circuit (IC) and testing the IC. The testing step, in one embodiment, comprises placing the IC in a prober, placing a probe card in the prober. The probe card has a plurality of contact pads located on its surface that are electrically connected to corresponding probe needles located under the probe card. The probe needles are brought into contact with contact pads located on the IC. A tester is positioned over the probe card and includes a testing head having probes located thereon. The probes are positioned onto different contact pads of the probe card and a control module that is electrically coupled to the testing head to test the IC is used to control the testing process. The method of testing further includes adjusting a temperature of the probe needles to reduce movement of the probe needles by applying a voltage to a temperature stabilizer element that is coupled to the probe card. The temperature stabilizer element is configured to provide either heat or cold to the probe card upon a change in the polarity of the applied voltage.
- For a more complete understanding of the present invention, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 illustrates a semiconductor device testing apparatus by the invention; -
FIG. 2 illustrates an embodiment of a temperature stabilizing element of the invention; -
FIG. 3 illustrates an embodiment of a controller that can be used in the invention; and -
FIG. 4 illustrates a prober and tester system in which the testing apparatus may be employed to test a semiconductor device; -
FIG. 5 illustrates the implementation of the testing apparatus with a semiconductor device; and -
FIG. 6 illustrates the implementation of the testing apparatus with an IC. -
FIG. 1 illustrates one embodiment of asemiconductor testing apparatus 100 of the invention. This embodiment includes aprobe card 105. Theprobe card 105 may be of conventional design. In such embodiments, theprobe card 105 will include multiple levels of circuits traces located between multiple layers of theprobe card 105. It will also have a plurality ofcontact pads 110 located on its surface. Theprobe card 105 further includes aceramic ring 115.Probe needles 120 are located underneath theprobe card 105 and are supported by theceramic ring 115 and attached to theceramic ring 115 with anepoxy 122, as shown. Variousprobe needle extensions 123 extend through theceramic ring 115 and connect toindividual probe needles 120. Theprobe needle extensions 123 are connected to theprobe card 105 at asolder point 124. A conductive trace, which is not shown, extends from each of thesolder points 124 to the individual contact pads, thereby providing electrical connection of theprobe needles 120 to thedifferent contact pads 110. During a testing procedure, theprobe needles 120 are brought into contact with anIC 125, which in this embodiment, does not form a part of thesemiconductor testing apparatus 100. - In one embodiment, the
semiconductor testing apparatus 100 may include astiffener 130 that is couplable to theprobe card 105. When present, thestiffener 130 is used to minimize flex in theprobe card 105, and it may be of conventional design. - The
apparatus 100 further includes atemperature stabilizing element 135 that is thermally coupled to the probe needles 120. In the illustrated embodiment, thetemperature stabilizing element 135 is coupled to thestiffener 130, which in turn is thermally coupled to the probe needles 120 by way of theceramic ring 115. However, in another embodiment, thetemperature stabilizing element 135 may have sufficient stiffness such that thestiffener 130 is not needed. In such instances, thetemperature stabilizing element 135 may be coupled directly to theprobe card 105. Thus, thetemperature stabilizer 135 is thermally coupled to the probe needles 120, such that a change of temperature in thetemperature stabilizer 135 is applied to and effects a temperature change of the probe needles 120. However, in those embodiments where thestiffener 130 is present, thetemperature stabilizing element 135 is couplable to thestiffener 130. In and alternative embodiment, thetemperature stabilizing element 135 and thestiffener 130 may form a single unit. Thetemperature stabilizing element 135 is configured to either raise or lower a temperature of the probe needles 120 to reduce their movement. These aspects of the invention are discussed below in more detail. - In one embodiment, the
apparatus 100 may also include aheat sink 140. When present, the heat sink may be couplable to thetemperature stabilizing element 135. Theheat sink 140 draws heat from thetemperature stabilizing element 135 and increases its cooling efficiency. In other embodiments, however, the heat sink may be integrally formed with thetemperature stabilizing element 135. -
FIG. 2 illustrates one embodiment of atemperature stabilizing element 200 of the invention. In the illustrated embodiment, thetemperature stabilizing element 200 is comprised of a series of P doped and N dopednodes 210. One end of thenodes 210 is electrically coupled in series by a segmentedconductive layer 215, while their opposing ends are electrically coupled by an un-segmentedconductive layer 220, which is electrically connected to the directcurrent source 205 byconductive wires 235. Thenodes 210 may be an appropriately doped bismuth-telluride semiconductor material. Thenodes 210 are located between opposingceramic plates ceramic plates temperature stabilizing element 200 of this embodiment is based on the Peltier Effect where DC applied across two dissimilar materials causes a temperature differential. As the electrons move from the P type material to the N type material through an electrical connector, the electrons jump to a higher energy state absorbing thermal energy (cold side). Continuing through the lattice of material, the electrons flow from the N type material to the P type material through an electrical connector, dropping to a lower energy state and releasing energy as heat to the heat sink (hot side). Thermoelectric devices, such as the one illustrated inFIG. 2 can, therefore, be used to heat and to cool, depending on the direction of the current. The element illustrated inFIG. 2 may be a Peltier diode, which is commercially available. - In another embodiment, the
temperature stabilizing element 200 may be a thermoelectric element. For example, the thermoelectric element may be a heater/cooling fan combination. In such embodiments, the heat sink may not be necessary or it may be integrally formed with or coupled to the heater/cooling fan. In another embodiment, however, the thermoelectric element is configured to provide either heat or cold to a probe card, depending on the direction (or polarity) of a current supplied by a direct current source (DC) 205. - The ability to control the amount of heat or cold applied to the probe needles 120 allows for better control over their movement. A desired temperature range that reduces the movement of the probe needles 120 can be targeted and the temperature stabilizing element can then be used to keep the probe needles 120, within that temperature range. This, in turn, would reduce the amount of movement of the probe needles 120 caused by large temperature fluctuations and reduce the amount of
probe needle 120 misalignment and over-scrubbing. - The testing apparatus of the invention, in another embodiment, may also include a
controller 300, as illustrated inFIG. 3 , with continued reference toFIG. 1 . Thecontroller 300 can be used to control thetemperature stabilizer element 305 and keep the probe needles 120 within the targeted temperature range. In one embodiment, thecontroller 300 comprises a comparator/driver 310 that is connected to DC power supply Vss and Vdd, as indicated. A temperature setelement 315 is electrically coupled to the comparator/driver 310 and to a DC source, as indicated. It is configured to provide a desired temperature range at which the probe needles 120 are to be maintained. In effect, it functions as a temperature governor by providing a defined temperature range of operation for the probe needles 120. The temperature setelement 315 may be a variable resistor, a potentiometer, or similar device. The comparator/driver 310 is also electrically coupled to athermocouple 320. Thethermocouple 320 provides an operating temperature of theceramic ring 115 to the comparator/drive 310. In one embodiment, it may be necessary to scale the voltage used to operate thethermocouple 320 up or down. In such embodiments, thecontroller 300 may also include avoltage scaling unit 325 that is coupled to the comparator/driver 310. - In operation, a temperature of a
ceramic ring 115 to which the probe needles 120 are attached is read by thethermocouple 320. As mentioned in certain embodiments, thethermocouple 320 may operate on a millivolt range. In such instances, thevoltage scaling unit 325 will scale the voltage up such that the comparator/driver 310 may be able to read the signal. The comparator/driver 310 will compare the temperature of theceramic ring 115 provided by thethermocouple 320 to the set temperature provided by the temperature setelement 315. If the temperature is outside the set temperature, the comparator/driver 310 will adjust the voltage applied to thetemperature stabilizer element 305 to cause it to either provide heat or cold to the probe needles 120 to bring their temperature into the set range. -
FIG. 4 illustrates a system for testing a semiconductor device. In one embodiment, the system comprises aprober 405 that includes aprobe card pan 410 and which may be of conventional design. Thepan 410 is configured to receive theprobe card 105 ofFIG. 1 . Theprobe card 105 includes the plurality ofcontact pads 110 and the probe needles, which cannot be seen in this view. Thestiffener 130,temperature stabilizer element 135 andheat sink 140 ofFIG. 1 are schematically shown as asingle module 415. The system 400 of the invention further includes atester 420 that comprises atesting head 425 that hasprobes 430 located thereon wherein each of theprobes 430 can be oriented to engage adifferent contact pad 110 of theprobe card 105. Thetesting head 425 is mechanically lowered such that each of theprobes 430 contacts thecorrect contact pad 110. - In the illustrated embodiment, the
tester 420 also comprises acontrol module 435 that is electrically coupled to thetesting head 425 and controls the testing operation of the semiconductor device. Thecontrol module 435 may be comprised of a number ofIC boards 440 and may include thecontroller 300 ofFIG. 3 . It should be noted that both theprober 405 andtester 420 may be of conventional design and are commercially available from a number of suppliers. -
FIG. 5 illustrates an enlarged view of atesting apparatus 500 provided by the invention. In this embodiment, thetesting apparatus 500 is engaged with acontact pad 505 of asemiconductor device 510. In this embodiment, thetest apparatus 500 includes theprobe card 105, thestiffener 130, thetemperature stabilizing element 135, and theheat sink 140 ofFIG. 1 .FIG. 5 further illustrates in a general way, how theprobe 430 of the tester 420 (FIG. 4 ) makes electrical contact with thecontact pad 110. Aconductive trace 515 located within theprobe card 105 provides a conductive path from thecontact pad 110 to thesolder point 124. Theprobe needle extension 124 extends from thesolder point 124 and makes electrical connection with theprobe needle 120 by way of a conductive trace 520 that extends through theceramic ring 115 andepoxy 122. Theprobe needle 120 contacts thecontact pad 505, as shown. Thus, electrical connection is made between theprobe 430 and thesemiconductor device 510. - During placement of the
probe needle 120 on thecontact pad 505, thecontact pad 505 is “scrubbed” by theprobe needle 120 to remove a protective oxide coating on thecontact pad 505. This is done to insure good electrical contact between theprobe needle 120 and thecontact pad 505. If the temperature ofprobe card 105, and thus theprobe needle 120, has fluctuated enough to cause misalignment of theprobe needle 120, theprobe needle 120 may over scrub or miss thecontact pad 505 altogether. In either case, the over scrubbing can irreparably damage thesemiconductor device 510. However, with the invention the potential for any damage is reduced because thetemperature stabilizing element 135 can be used to maintain a temperature of theprobe needle 120 within a set range, which reduces the amount of movement and misalignment of theprobe needle 120. -
FIG. 6 schematically illustrates a method of testing an IC (e.g.,semiconductor device 510,FIG. 5 ) that is located on a wafer. Since the components are the same as those discussed inFIG. 5 , the same reference will be used. TheIC 510 is provided, and it and theprobe card 105 are positioned within the prober 405 (FIG. 4 ), as discussed above. The probe needles 120 are brought into contact with thepads 505 located on theIC 510 and theprober 430 is then brought into contact withcontact pad 110 located on theprobe card 105. Using theprober 405 and tester 420 (FIG. 4 ), the testing may then be conducted in a way known to those who are skilled in the art. During the testing of theIC 510 or cleaning the probe needles 120, the temperature of theprobe card 105 may be adjusted in the manner described above to reduce movement of the probe needles 120 by applying a voltage to thetemperature stabilizer element 135 to provide either heat or cold to the probe needles 120, depending on the direction of the current. - Those skilled in the art to which the invention relates will appreciate that other and further additions, deletions, substitutions and modifications may be made to the described embodiments without departing from the scope of the invention.
Claims (1)
1. A semiconductor testing apparatus, comprising:
a probe card;
a temperature stabilizer coupled to the probe card, having a direct current source and a series of P doped and N doped semiconductor material between opposing ceramic plates, operable to supply heat to the probe card with the current source applying a current directed to the P doped semiconductor material or remove heat from the probe card with the current source applying a current directed to the N doped semiconductor material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US12/353,082 US20090115441A1 (en) | 2006-05-17 | 2009-01-13 | Probe card and temperature stabilizer for testing semiconductor devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/383,866 US7495458B2 (en) | 2006-05-17 | 2006-05-17 | Probe card and temperature stabilizer for testing semiconductor devices |
US12/353,082 US20090115441A1 (en) | 2006-05-17 | 2009-01-13 | Probe card and temperature stabilizer for testing semiconductor devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/383,866 Continuation US7495458B2 (en) | 2006-05-17 | 2006-05-17 | Probe card and temperature stabilizer for testing semiconductor devices |
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US20090115441A1 true US20090115441A1 (en) | 2009-05-07 |
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Application Number | Title | Priority Date | Filing Date |
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US11/383,866 Active US7495458B2 (en) | 2006-05-17 | 2006-05-17 | Probe card and temperature stabilizer for testing semiconductor devices |
US12/353,082 Abandoned US20090115441A1 (en) | 2006-05-17 | 2009-01-13 | Probe card and temperature stabilizer for testing semiconductor devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/383,866 Active US7495458B2 (en) | 2006-05-17 | 2006-05-17 | Probe card and temperature stabilizer for testing semiconductor devices |
Country Status (3)
Country | Link |
---|---|
US (2) | US7495458B2 (en) |
TW (1) | TW200807000A (en) |
WO (1) | WO2007137065A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100134922A1 (en) * | 2008-11-28 | 2010-06-03 | Kabushiki Kaisha Toshiba | Magnetic recording head, magnetic head assembly, magnetic recording apparatus, and magnetic recording method |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008128838A (en) * | 2006-11-21 | 2008-06-05 | Shinko Electric Ind Co Ltd | Probe device |
KR101344348B1 (en) * | 2007-01-22 | 2013-12-24 | 삼성전자주식회사 | Test socket of semiconductor device and test method using the same |
JP5199859B2 (en) * | 2008-12-24 | 2013-05-15 | 株式会社日本マイクロニクス | Probe card |
JP2010182874A (en) * | 2009-02-05 | 2010-08-19 | Oki Semiconductor Co Ltd | Probe card maintenance method |
KR101474951B1 (en) * | 2009-02-17 | 2014-12-24 | 삼성전자주식회사 | Apparatus for testing semiconductor device |
JP5748709B2 (en) * | 2012-06-05 | 2015-07-15 | 三菱電機株式会社 | Probe card |
KR102077062B1 (en) * | 2013-02-25 | 2020-02-13 | 삼성전자주식회사 | Probe card and apparatus for testing an object including the same |
CN104236756A (en) * | 2013-06-20 | 2014-12-24 | 鸿富锦精密工业(深圳)有限公司 | CPU pressure testing device |
US11280827B2 (en) * | 2016-02-29 | 2022-03-22 | Teradyne, Inc. | Thermal control of a probe card assembly |
TWI704354B (en) * | 2019-03-21 | 2020-09-11 | 創意電子股份有限公司 | Probe card, wafer inspection apparatus having the same, and chip probe test flow using the same |
US11307246B2 (en) * | 2019-09-24 | 2022-04-19 | Star Technologies, Inc. | Probing apparatus and method of operating the same |
CN116295933B (en) * | 2023-05-15 | 2023-08-08 | 上海泽丰半导体科技有限公司 | Probe card temperature measurement system and temperature measurement method |
Citations (3)
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US5124639A (en) * | 1990-11-20 | 1992-06-23 | Motorola, Inc. | Probe card apparatus having a heating element and process for using the same |
US6094919A (en) * | 1999-01-04 | 2000-08-01 | Intel Corporation | Package with integrated thermoelectric module for cooling of integrated circuits |
US6586956B2 (en) * | 2000-05-31 | 2003-07-01 | Advantest, Corp. | Probe contract system having planarity adjustment mechanism |
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US3963985A (en) * | 1974-12-12 | 1976-06-15 | International Business Machines Corporation | Probe device having probe heads and method of adjusting distances between probe heads |
US5570032A (en) * | 1993-08-17 | 1996-10-29 | Micron Technology, Inc. | Wafer scale burn-in apparatus and process |
JP4376370B2 (en) * | 1999-09-29 | 2009-12-02 | 東京エレクトロン株式会社 | High-speed measurement probe device |
US7071714B2 (en) * | 2001-11-02 | 2006-07-04 | Formfactor, Inc. | Method and system for compensating for thermally induced motion of probe cards |
US7307433B2 (en) * | 2004-04-21 | 2007-12-11 | Formfactor, Inc. | Intelligent probe card architecture |
US7285968B2 (en) | 2005-04-19 | 2007-10-23 | Formfactor, Inc. | Apparatus and method for managing thermally induced motion of a probe card assembly |
-
2006
- 2006-05-17 US US11/383,866 patent/US7495458B2/en active Active
-
2007
- 2007-05-16 WO PCT/US2007/069032 patent/WO2007137065A2/en active Application Filing
- 2007-05-17 TW TW096117609A patent/TW200807000A/en unknown
-
2009
- 2009-01-13 US US12/353,082 patent/US20090115441A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5124639A (en) * | 1990-11-20 | 1992-06-23 | Motorola, Inc. | Probe card apparatus having a heating element and process for using the same |
US6094919A (en) * | 1999-01-04 | 2000-08-01 | Intel Corporation | Package with integrated thermoelectric module for cooling of integrated circuits |
US6586956B2 (en) * | 2000-05-31 | 2003-07-01 | Advantest, Corp. | Probe contract system having planarity adjustment mechanism |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100134922A1 (en) * | 2008-11-28 | 2010-06-03 | Kabushiki Kaisha Toshiba | Magnetic recording head, magnetic head assembly, magnetic recording apparatus, and magnetic recording method |
Also Published As
Publication number | Publication date |
---|---|
US7495458B2 (en) | 2009-02-24 |
WO2007137065A2 (en) | 2007-11-29 |
WO2007137065A3 (en) | 2009-01-22 |
US20070268029A1 (en) | 2007-11-22 |
TW200807000A (en) | 2008-02-01 |
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Legal Events
Date | Code | Title | Description |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |