US20090152702A1 - Coupling wire to semiconductor region - Google Patents
Coupling wire to semiconductor region Download PDFInfo
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- US20090152702A1 US20090152702A1 US12/380,974 US38097408A US2009152702A1 US 20090152702 A1 US20090152702 A1 US 20090152702A1 US 38097408 A US38097408 A US 38097408A US 2009152702 A1 US2009152702 A1 US 2009152702A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/06—Devices comprising elements which are movable in relation to each other, e.g. slidable or rotatable
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06593—Mounting aids permanently on device; arrangements for alignment
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L2924/013—Alloys
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Abstract
A first device has a surface and includes a micrometer-scale or smaller geometry doped semiconductor region extending along the surface. A second device has a surface opposite the surface of the first device and includes a micrometer-scale or smaller wire extending through the second device to a position in proximity to the surface of the second device. The first and second devices are displaceable between first and second positions relative to each other. The wire is not substantially electrically coupled to the doped semiconductor region in the first position and the wire is substantially electrically coupled to the doped semiconductor region in the second position. A potential applied to the wire affects the conductivity of the doped semiconductor region in the second position.
Description
- This application is related to the following United States patent applications which are filed on even date herewith and which are incorporated herein by reference:
- Ser. No. 10/______ (Attorney Docket No.: 200315557-1/196843) entitled SYSTEMS AND METHODS FOR RECTIFYING AND DETECTING SIGNALS;
- Ser. No. 10/______ (Attorney Docket No.: 200315559-1/196845) entitled SYSTEMS AND METHODS FOR ELECTRICALLY COUPLING WIRES AND CONDUCTORS; and
- Ser. No. 10/______ (Attorney Docket No.: 200406357-1/200272) entitled METHODS AND SYSTEMS FOR ALIGNING AND COUPLING DEVICES.
- Integrated circuits have dominated the electronics industry for many years. Some applications require the use of multiple integrated circuits in combination. Signals between these multiple integrated circuits are connected in order for them to perform their intended function.
- Wire bonding is one method for connecting signals between integrated circuits. Each integrated circuit may include a wire bonding pad. An electrical interconnection between the integrated circuits is made by connecting a thin wire between the wire bonding pads. As the size of integrated circuits decreases, the space used for wire bonding techniques, such as for the bonding pads and the fan-out structures to bring signals to the bonding pads, becomes a larger proportion of entire integrated circuit surface.
- The following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an extensive overview of the invention. It is intended to neither identify key or critical elements of the invention nor delineate the scope of the invention. Its sole purpose is to present some general concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later.
- In one embodiment, the invention encompasses a system having a first device and a second device. The first device has a surface and includes a micrometer-scale or smaller geometry doped semiconductor region extending along the surface. The second device has a surface opposite the surface of the first device and includes a micrometer-scale or smaller wire extending through the second device to a position in proximity to the surface of the second device. The first and second devices are displaceable between first and second positions relative to each other. The wire is not substantially electrically coupled to the doped semiconductor region in the first position and the wire is substantially electrically coupled to the doped semiconductor region in the second position. A potential applied to the wire affects the conductivity of the doped semiconductor region in the second position.
- In another embodiment, the invention encompasses a system including a first device and a plurality of wire devices. The first device has a surface and includes a plurality of micrometer-scale or smaller geometry doped semiconductor regions extending along the surface of the first device. The wire devices each have a surface opposite the surface of the first device and each include a micrometer-scale or smaller wire extending through the respective wire device to at least one position in proximity to the surface of the respective wire device. Each of the wire devices is displaceable between respective first and second positions relative to the first device and its respective wire is substantially electrically coupled to a respective group of the plurality of doped semiconductor regions in the second position and is not substantially electrically coupled to the respective group of doped semiconductor regions in the first position. A potential applied to the wire of one of the plurality of wire devices affects the conductivity of its respective group of the plurality of doped semiconductor regions in the second position.
- In another embodiment, the invention encompasses a method for substantially electrically coupling a micrometer-scale or smaller geometry doped semiconductor region to a micrometer-scale or smaller geometry wire. A first device has a surface and includes the doped semiconductor region extending along its surface. A second device has a surface opposite the surface of the first device and includes the wire extending through the second device to a position in proximity to the surface of the second device. One of the first and second devices is displaced relative to the other device. A signal is received from a sensor, the signal indicating the relative position of the wire and the doped semiconductor region. The alignment of the first and second wires is determined in response to the signal.
- In yet another embodiment, the invention encompasses a method for substantially electrically coupling a micrometer-scale or smaller geometry wire to a micrometer-scale or smaller geometry doped semiconductor region. A first device has a surface and includes the plurality of doped semiconductor regions extending along its surface. A second device has a surface opposite the surface of the first device and includes the wire extending through the second device to a position in proximity to the surface of the second device. A signal identifying one of the doped semiconductor regions is received. Position information corresponding to the identified doped semiconductor region is read from memory. One of the first and second devices is displaced in response to the position information.
- In another embodiment, the invention comprises a method of substantially electrically coupling a micrometer-scale or smaller geometry wire to one of a plurality of micrometer-scale or smaller geometry doped semiconductor regions. A first device has a surface and includes the plurality of doped semiconductor regions extending along its surface. A second device has a surface opposite the surface of the first device and includes the wire extending through the second device to a position in proximity to the surface of the second device comprising. A signal identifying one of the doped semiconductor regions is received. Position information is read from memory, the position information corresponding to the identified doped semiconductor region. One of the first and second devices is displaced in response to the position information.
- In another embodiment, the invention comprises a system having a first device and a second device. The first device has a micrometer-scale or smaller geometry doped semiconductor region. The second device has a micrometer-scale or smaller geometry signal conductor. An actuator displaces the first and second devices relative to each other between first and second positions such that the doped semiconductor region is substantially conductive in the first position and not in the second position.
- In another embodiment, the invention comprises a system having a first device including micrometer-scale or smaller geometry doped semiconductor region. A second device includes a micrometer-scale or smaller geometry first means for activating and deactivating the doped semiconductor region. A second means displaces the first and second devices relative to each other between first and second positions such that the doped semiconductor is activated in the first position and deactivated in the second position.
- In another embodiment, the invention comprises a method of activating one of a plurality of micrometer-scale or smaller geometry doped semiconductor regions along a surface of a first device. A command signal is received, the command signal identifying the one of the plurality of doped semiconductor regions. A control signal is generated in response to the command signal. A second device is actuated relative to the first device in response to the control signal to align a conductor on the second device with the identified doped semiconductor region.
- For the purpose of illustrating the invention, there is shown in the drawings a form that is presently preferred; it being understood, however, that this invention is not limited to the precise arrangements and instrumentalities shown.
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FIGS. 1A-C are top views of a portion of a system according to an embodiment of the invention in a first position, second position, and third position, respectively, according to an embodiment of the invention; -
FIGS. 2A-C are cross-sectional views of the system shown inFIGS. 1A-C taken alonglines 2A-2A, 2B-2B, and 2C-2C, respectively, according to an embodiment of the invention; -
FIGS. 3A and 3B are a cross-sectional views of the system shown inFIGS. 2A and 2B , respectively, taken alongline 3A-3A andline 3B-3B, respectively, according to an embodiment of the invention; -
FIG. 4 is a cross-sectional view of the system shown inFIG. 2A taken along line 4-4 according to an embodiment of the invention; -
FIGS. 5A-D are cross-sectional views illustrating various positions of wires relative to devices according to embodiments of the invention; -
FIGS. 6A and 6B are top views of a system including multiple wires in a device according to an embodiment of the invention; -
FIGS. 7A and 7B are top views of a system including multiple devices according to an embodiment of the invention; -
FIG. 8 is a top view of a system including multiple doped semiconductor regions and multiple wire devices according to an embodiment of the invention; -
FIGS. 9A-C illustrate cross-sectional views of the system shown inFIG. 8 alonglines 9A-9A, 9B-9B and 9C-9C, respectively, according to an embodiment of the invention; -
FIG. 10 is a top view of a system including multiple doped semiconductor regions and multiple wire devices according to an embodiment of the invention; -
FIG. 11 is a block diagram of a system according to an embodiment of the invention; -
FIGS. 12A and 12B are cross-sectional diagrams of a system according to an embodiment of the invention; -
FIGS. 13-14 show flow charts illustrating methods according to embodiments of the invention; -
FIG. 15 is an isometric view of a system according to an embodiment of the invention; -
FIG. 16A-C are cross sectional view of the system inFIG. 15 taken along line 16-16; -
FIG. 17 is an isometric view of a system having a device flexibly coupled to a substrate according to an embodiment of the invention; -
FIG. 18A-D are cross sectional view of the system inFIG. 17 taken along line 18-18; -
FIGS. 19-20 are isometric views of systems having electrostatic actuators according to embodiments of the invention; -
FIG. 21 is a cross-sectional diagram of a portion of the system inFIG. 20 taken along line 21-21; and -
FIG. 22 shows a flow chart illustrating a method according to an embodiment of the invention. - Referring to the drawings, in which like reference numerals indicate like elements, there is shown in
FIGS. 1A-C top views of asystem 100 according to an embodiment of the invention. Thesystem 100 includes afirst device 102 and asecond device 104. Structures (e.g., electronic circuits, mechanical components) on or in the first andsecond devices - The
second device 104 is shown in a first position inFIG. 1A , in a second position inFIG. 1B , and in a third position inFIG. 1C , relative to thefirst device 102.FIGS. 2A-C are cross-sectional views of thesystem 100 taken alonglines 2A-2A, 2B-2B and 2C-2C inFIGS. 1A-C , respectively.FIGS. 3A and 3B are cross-sectional views of thesystem 100 taken alonglines 3A-3A, 3B-3B inFIGS. 2A and 2B , respectively.FIG. 4 is a cross-sectional view of thesystem 100 shown inFIG. 2A taken along line 4-4. Thesystem 100 is described below with reference toFIGS. 1-4 . - In an embodiment of the invention, the structures in or on the first and
second devices surface 206 of thefirst device 102 and awire 110 that extends through thesecond device 104 and through thesurface 208 of thesecond device 104. Thewires 106, 110 are formed on thedevices - The
second device 104 is displaceable between positions where thewire 110 in thesecond device 104 is substantially electrically coupled to one of the plurality of wires 106 in thefirst device 102, as in the second and third positions shown inFIGS. 1B and 1C , respectively, and positions where thewire 110 in thesecond device 104 is not substantially electrically coupled to any of the plurality of wires 106 in thefirst device 102, as in the first position shown inFIG. 1A . According to embodiments of the invention, a wire or conductor may be electrically coupled to another wire or conductor indirectly such as by inductive or capacitive coupling or by direct contact. - Embodiments of the invention encompass interconnecting structures manufactured using different types of manufacturing technologies. For example, the first and
second devices first device 102 and the structures on thesecond device 104 are manufactured using different micrometer or smaller scale geometry processes. In an embodiment of the invention, the wires 106 on thefirst device 102 are nanometer-scale structures and thewire 110 on thesecond device 104 is a micrometer scale structure. - The
second device 104 is displaceable in a direction indicated byarrow 108. Although thearrow 108 indicates a substantially linear direction, embodiments of the invention encompass non-linear displacement of thedevices device 104 is shown as being displaceable in a direction perpendicular to the direction of the wires 106 on thefirst device 102, embodiments of the invention encompass a wire on one device being displaceable in a direction that is not perpendicular to wires on another device and the wires 106 are not necessarily parallel. - The
first device 102 has asurface 206 and thesecond device 104 has asurface 208 substantially opposite thesurface 206 of thefirst device 102. A plurality of wires 106 each extend along thesurface 206 of thefirst device 102. The term “along the surface” encompasses embodiments where the wires 106 are within the device, are flush or substantially flush with thesurface 206 of the device, and extend past thesurface 206 of the first device 102 (embodiments of the invention illustrating different positions of wires along the surface of a device are later described with reference toFIGS. 5A-D ). - In the first position of the
second device 104 as shown inFIG. 1A , thewire 110 in thesecond device 104 is a distance D2 (seeFIG. 2A ) sufficiently away from all of the plurality of wires 106 in thefirst device 102 so that it is not electrically coupled to one of the plurality of wires 106. In the embodiment of the invention shown inFIG. 2A , thesystem 100 includes aground plane 204. Theground plane 204 facilitates electrically isolating thewire 110 in thesecond device 104 from the wires 106 along thesurface 206 of thefirst device 102 when in the first position. - The
wire 110 in thesecond device 104 extends through the surface of the device and through an opening in theground plane 204 as illustrated inFIGS. 2A and 4 . When thewire 110 in thefirst device 104 is positioned away from the wires 106 in thefirst device 102, the wires 106 in thefirst device 102 are in proximity to theground plane 204. The ground plane may inhibit signals in thewire 110 in thesecond device 104 from being coupled to wires 106 in thefirst device 102 whenwire 110 is away from the wires 106 in thefirst device 102. Although the term “ground” plane is used herein, embodiments of the invention encompass applying a direct current (DC) voltage to theconductive plane 204. - In the second position of the
second device 104 as shown inFIG. 1B , thewire 110 in thesecond device 104 is sufficiently close to and in proximity to one of the plurality ofwires 106B in thefirst device 102 so that signals may be electrically coupled between thewire 110 on thesecond device 104 and thewire 106B on thefirst device 102. Similarly, in the third position of thesecond device 104 shown inFIG. 1C , thewire 110 in thesecond device 104 is positioned in proximity to one of the plurality ofwires 106C in thefirst device 102 so that it is electrically coupled to thatwire 106C. - A system according to an embodiment of the invention may include a clamping or other mechanism to apply a force to bring the first and
second devices wire 110 in thesecond device 104 is in proximity to one of the wires 106 in thefirst device 102 to enhance the electrical coupling between thewires 110, 106 by bringing them closer together. - The
system 100 shown inFIGS. 2A-C includes a clamping mechanism that applies an electrostatic force to pull the first andsecond devices FIG. 2B includeselectrostatic clamping electrodes 202. A charge or potential may be applied to theelectrodes 202 and an opposite charge or potential may be applied to theground plane 204 to pull the twodevices second device 104 also includes clamping electrodes (as shown inFIGS. 9A and 9B ) that are oppositely charged and attracted to the clampingelectrodes 202 on thefirst device 102. Embodiments of the invention encompass electrostatic actuators for attracting devices together where an attractive force is generated by applying a potential difference between the electrodes such as positive and negative, positive and ground, negative and ground, or different levels of positive and positive or negative and negative potentials. - The wires 106 on the
first device 102 and thewire 110 on thesecond device 104 shown inFIGS. 1-3 extend beyond thesurface respective devices wires 106, 110 connect to each other in the second and third positions as shown inFIGS. 2B and 2C , respectively. When thewires 106, 110 are connected to each other, signals may be directly communicated between thewires 106, 110. As described below with reference toFIGS. 5A-D , thewires 106, 110, ground (or conductive)plane 204, andelectrodes 202 may be positioned within, at the surface of, or above the surface of their respective devices according to embodiments of the invention. - In
FIG. 5A there is shown a plurality of wires 516 andelectrodes 512 that are substantially flush with thesurface 506 of thefirst device 502. Theground plane 514 andwire 510 extend past thesurface 508 of thefirst device 504. When the first andsecond devices wire 510 of thesecond device 504 contacts thewire 516B of thefirst device 502 and signals may be directly communicated or conducted between thewires - In
FIG. 5B there is shown a plurality of wires 516 andelectrodes 512 that extend past or through thesurface 506 of thefirst device 502. Theconductive plane 514 andwire 510 extend to a position in proximity to but not at thesurface 508 of thefirst device 504. When the first andsecond devices 504 are pulled together, thewire 510 of thesecond device 504 does not contact thewire 516B of thefirst device 502. Thewires dielectric material 518. Although thewires second devices FIG. 5B , signals from onewire devices wires - In
FIG. 5C there is shown a plurality of wires 516 andelectrodes 512 that extend to a position in proximity to but not at thesurface 506 of thefirst device 502. Theground plane 514 andwire 510 extend to a position substantially flush with thesurface 508 of thefirst device 504. When the first andsecond devices 504 are pulled together, thewire 510 of thesecond device 504 does not contact thewire 516B of thefirst device 502 because thewire 516B is not at the surface of thefirst device 502. Thewires dielectric material 520. Although thewires FIG. 5C , they are capacitively coupled when thedevices FIG. 5B and AC signals may be communicated between thewires - In
FIG. 5D there is shown an embodiment of the invention similar to that inFIG. 5C but with thewire 510 extending to a position past thesurface 508 of thefirst device 504. Thewires FIG. 5D are not connected and are capacitively coupled when thedevices dielectric material 520 separating thewires - There is shown in
FIGS. 6A and 6B top views of asystem 600 according to an embodiment of the invention. Thesystem 600 includes afirst device 602 and asecond device 604. Thesecond device 604 is displaceable in a direction indicated byarrow 608. Thesecond device 604 is shown in a first position inFIG. 6A and in a second position inFIG. 6B , relative to thefirst device 602. - A plurality of wires 606 each extend along the surface of the
first device 602. A plurality of wires 610 extend through thesecond device 604 and through the surface of thesecond device 604. With multiple wires 610 in thesecond device 604, each position of thesecond device 604 allows multiple wires 610 from thesecond device 604 to be electrically coupled to or electrically de-coupled from the wires 606 in thefirst device 602. In addition, multiple wires 610 allow thesecond device 604 to move a shorter distance and still electrically couple one of the wires 610 to any one of the wires 606 of thefirst device 602. - In the first position shown in
FIG. 6A , two of thewires second device 604 are not electrically coupled to the wires 606 in thefirst device 602 and anotherwire 610B is electrically coupled to awire 606E in thefirst device 602. In the second position shown inFIG. 6B , thewires second device 604 are electrically coupled to several of thewires first device 602 and thewire 610B is not electrically coupled to a wire 606 in thefirst device 602. Although the wires 610 of thesecond device 602 are shown as independent and not connected to each other in the embodiment shown inFIGS. 6A and 6B , the wires 610 can be connected together according to another embodiment of the invention. - There is shown in
FIGS. 7A and 7B top views of asystem 700 according to an embodiment of the invention. Thesystem 700 includes afirst device 702, asecond device 704A, athird device 704B, and afourth device 704C. The second, third, and fourth devices 704 are displaceable in a direction indicated byarrow 708, relative to thefirst device 702. The second, third, and fourth devices 704 are each shown in a respective first position inFIG. 7A and in a respective second position inFIG. 7B , relative to thefirst device 702. Each of the second, third, andfourth devices 704A-C may be positioned independently to electrically couple or de-couple its respective wire 710 A-C from awire 706A-I of thefirst device 702. - With multiple devices each having a wire 710 as illustrated in
FIGS. 7A and 7B , a wire 710 may be electrically coupled to a wire on thefirst device 702 with less displacement than with a single device with a wire 710. For example, inFIG. 7B the wire 706H is electrically coupled to thewire 710C on thefourth device 704C. From its first position inFIG. 7A , thefourth device 704C was actuated a distance less than the distance between twowires 706G and 706H. In comparison, with only thesecond device 704A (and not the third andfourth devices second device 704A would be actuated more than the distance between six wires from 706B to 706H to couple to wire 706H. The shorter displacement distances allow for quicker transitions to connect to a particular wire 706 on thefirst substrate 702. - Although embodiments of the invention are described above with reference to alignment of wires on devices, embodiments of the invention also encompass devices with other forms of micrometer-scale or smaller signal conductors. Signal conductors encompass materials that convey signals including transmitters and receivers of signals, including but not limited to sound and electromagnetic signals. In an embodiment of the invention, the structures on the devices to be aligned conduct optical signals. For example, an optical transmitter on one device may be selectively aligned with one of a plurality of optical receivers on another device according to an embodiment of the invention.
- Although described above with reference to coupling signals from a wire on one device to a wire on another device, embodiments of the invention encompass coupling a wire on one device to a structure on another device for affecting the conductivity of the structure. There is shown in
FIG. 8 asystem 800 including a plurality of doped depletion-type semiconductor regions 806A-H according to an embodiment of the invention. A plurality ofwire devices 804A-F each include at least one wire 810. Thewires 810A-F extend through theirrespective wire devices 804A-F to at least one position in proximity to (e.g., within the wire device, substantially flush with the surface of the wire device, through the surface of the respective wire device) the surface of the respective wire device. Eachwire 810A-F may span and may be coupled to one or more of the dopedsemiconductor regions 806A-H. - The
wire 810A inwire device 804A extends through thewire device 804A to a position in proximity to four dopedsemiconductor regions 806A-D as illustrated inFIGS. 8 and 9A .FIG. 9A is a cross-sectional diagram of thesystem 800 shown inFIG. 8 taken alongline 9A-9A. Thewire 810A extends through thewire device 804A to a position in proximity to thesurface 808A of thewire device 804A, opposite thesurface 806 of thedevice 802. The clampingelectrodes devices wire 810A, the four doped (e.g., depletion doped)semiconductor regions 806A-D become substantially non-conductive. Theground plane 814A ofdevice 804A reduces the affect of thewire 810A on the four dopedsemiconductor regions 806E-H so their conductivity is not substantially affected bywire 810A. - The
wire 810E inwire device 804E extends through thewire device 804E to a position in proximity to four dopedsemiconductor regions FIG. 9B .FIG. 9B is a cross-sectional diagram of thesystem 800 shown inFIG. 8 taken alongline 9B-9B. Thewire 810E extends through thewire device 804A to multiple positions in proximity to thesurface 808E of thewire device 804E, opposite thesurface 806 of thedevice 802. The clampingelectrodes devices wire 810E, the four doped (e.g., depletion doped)semiconductor regions ground plane 814E ofdevice 804E reduces the affect of thewire 810A on the four dopedsemiconductor regions 806E-H so their conductivity is not substantially affected bywire 810E. - The
system 800 ofFIG. 8 may be used as for binary-tree addressing according to an embodiment of the invention. Each wire 810 is driven by one of three control lines A0, A1, or A2 or by its inverseA0 ,A1 , orA2 . With a zero or positive voltage (V≧0) applied to a wire 810, the depletion-type semiconductor regions that are proximate to that wire 810 are substantially conductive. With a negative voltage (V<0) applied to a wire 810, the depletion-type semiconductor regions proximate to the wire 810 are substantially non-conductive. The depletion-type semiconductor region becomes less conductive the greater the negative potential applied to the wire 810. The output signals corresponding to eachdoped semiconductor region 806A-H are designated X0-7, respectively inFIG. 8 . Table 1 below shows the output signals X0-7 for combinations of the control signals A0-2 where an output signal having a value of “I” indicates that the respective doped semiconductor region is conductive and the input signal I is transmitted to the corresponding output X0-7. Although shown as having a common input I, embodiments of the invention encompass some and all of the dopedsemiconductor region 806A-H having a separate input signal. -
TABLE 1 Control Output Signals A2 A2 A1 A1 A0 A0 X0 X1 X2 X3 X4 X5 X6 X7 0 −V 0 −V 0 −V I 0 0 0 0 0 0 0 0 −V 0 −V −V 0 0 I 0 0 0 0 0 0 0 −V −V 0 0 −V 0 0 I 0 0 0 0 0 0 −V −V 0 −V 0 0 0 0 I 0 0 0 0 −V 0 0 −V 0 −V 0 0 0 0 I 0 0 0 −V 0 0 −V −V 0 0 0 0 0 0 I 0 0 −V 0 −V 0 0 −V 0 0 0 0 0 0 I 0 −V 0 −V 0 −V 0 0 0 0 0 0 0 0 I - Embodiments of the invention are not limited to a particular semiconductor material or doping thereof. In an embodiment of the invention, the structure (e.g., 806A-H) is an enhancement-type semiconductor region. A voltage applied to a wire (e.g., 810) on another device affects the conductivity of the enhancement-type semiconductor region. With a zero or positive voltage (V≧0) applied to a wire (e.g., 810) the enhancement-type semiconductor regions that are proximate to that wire (e.g., 810) are substantially non-conductive. With a negative voltage (V<0) applied to a wire (e.g., 810), the enhancement-type semiconductor regions proximate to the wire (e.g., 810) are substantially conductive. The enhancement-type semiconductor region becomes more conductive the greater the negative potential applied to the wire 810. In an embodiment of the invention, the voltage V is measured with reference to the potential of the corresponding structure 806 (e.g., voltage V is measured between
wire 810F and dopedsemiconductor region 806F). -
FIG. 9C is a cross-sectional diagram of thesystem 800 shown inFIG. 8 taken alongline 9C-9C in an embodiment where thestructures 806 are enhancement-type semiconductor regions. Thestructure 806F includes aportion 830 comprising an enhancement-type semiconductor and aportion 832 that is conductive. Thewire 810F of thewire device 804F has a width WW larger than the width WE of the enhancement-type semiconductor portion in the embodiment shown inFIG. 9C . The larger width WW of thewire 810F encompasses the enhancement-type semiconductor portion 830 so all of the enhancement-type semiconductor portion 830 becomes substantially conductive when a negative voltage (V<0) is applied to thewire 810F. - There is shown in
FIG. 10 asystem 1000 including a plurality of doped depletion-type semiconductor regions 1006A-H according to an embodiment of the invention. A plurality ofwire devices 1004A-H include at least one wire 1010. Thewires 1010A-H extend through theirrespective wire devices 1004A-H to at least one position in proximity to (e.g., within the wire device, substantially flush with the surface of the wire device, through the surface of the respective wire device) the surface of the respective wire device. Thewires 1010A-H may span and may be coupled to one or more of the dopedsemiconductor regions 1006A-H. - The function of the
system 1000 inFIG. 10 is similar to thesystem 800 shown inFIG. 8 , but its structure differs. The output signals X0-7 for thesystem 1000 inFIG. 10 are shown in Table 1 above for combinations of the control signals A0-2 where an output signal having a value of “I” indicates that the respective doped semiconductor region is conductive and the input signal I is transmitted to the corresponding output X0-7. However, thesystem 1000 includes twoadditional wire devices system 800 inFIG. 8 . Fourwire devices 1004E-H are driven by the control signal A0 (andA0 ) rather than two devices as insystem 800. Additional wire devices are used to increase the distance D10 shown inFIG. 10 , which is greater than the distance D8 shown inFIG. 8 , between positions where the wires 1010 in the wire devices 1004 extend through the wire device 1004 to positions in proximity to their respective surfaces. - Some manufacturing methods become more complex as structures are positioned close to each other. For example, it may be more difficult to manufacture structures using photolithography if the structures have sub-wavelength features due to fringing caused by diffraction patterns. In the
system 800 shown inFIG. 8 , thewires system 1000, the function ofwires 810E-F inFIG. 8 are performed bywire devices 1004E-H andwires 1010E-H. The number of wires and wire structures is increased compared to thesystem 800 shown inFIG. 8 . However, the distance D10 inFIG. 10 between structures formed in thewire devices 1004E-H is greater than the distance D8 inFIG. 8 between structures formed in thewire devices 804E-F, thus reducing manufacturing complexity and/or allowing the regions 1006 to be positioned closer together than would be possible under thesystem 800 shown inFIG. 8 . - The wire devices 804, 1004 in
FIGS. 8 and 10 are only shown in a single position such that their respective wires 810, 1010 are in alignment with selectedstructures 806, 1006 on thefirst devices 802, 1002. Embodiments of the invention encompass actuating the wire devices 804, 1004 as illustrated by the arrows inFIGS. 8 and 10 to align their respective wires 810, 1010 with selectedstructures 806, 1006 on thefirst devices 802, 1002. In an embodiment of the invention, the wire devices are actuated to positions where their respective wires 810, 1010 are aligned with selectedstructures 806, 1006 on thefirst devices 802, 1002 and the first andsecond devices 802, 1002, 804, 1004 are bonded together in aligned positions. - There is shown in
FIG. 11 a block diagram of asystem 1100 according to an embodiment of the invention including afirst device 1102 and asecond device 1104. Eachdevice FIGS. 1-10 . Acontroller 1114 receives acommand signal 1120 indicating to align (or misalign) structures on the first and second devices. In response to thecommand signal 1120, thecontroller 1114 controls anactuator 1108 to displace one or both of thedevices devices position sensor 1106. In an embodiment of the invention, thecommand signal 1120 may be generated by a processor (not shown) that controls the alignment or misalignment of structures on the first and second devices. Thecontroller 1114 includes aprocessor 1118 that receives and processes the position information from thesensor 1106 to generate acontrol signal 1112 transmitted to theactuator 1108 to control theactuator 1108 to displace one or both of thedevices position sensor 1106 and thecommand signal 1120. Although thecontroller 1114,position sensor 1106, andactuator 1108 are illustrated as being separate from thedevices controller 1114,position sensor 1106, andactuator 1108 being formed on one or both of thedevices - In an embodiment of the invention, the
position sensor 1106 indicates relative position of the first and second devices based on the coupling of a signal (e.g., via direct contact or via capacitive coupling) from a wire on one device to a wire on the other device. The level of coupling may be detected with a current sensor, for example, by grounding the wires in the first device, coupling the wire in the second device to a signal source (e.g., a voltage source), and sensing the current through one of the wires. As the wire in the first device passes a wire in the second device, a peak in current will be detected, indicating alignment of the wires. Similarly, the low points in the current may be detected to identify positions where the wires are not aligned and positions where the wires are de-coupled. The alignment of a wire with a region such as inFIGS. 8-10 may also be sensed by measuring the current flow (or lack thereof) through aregion 806, 1006 as the devices are actuated relative to each other. - The
sensor 1106 is shown as connected to the first andsecond devices first device 1102, thesecond device 1104, or from both the first andsecond devices second devices second devices - Embodiments of the invention encompass sensing alignment or misalignment of wires on the first and
second devices different devices system 1200 as shown inFIGS. 12A-B uses capacitive coupling between structures other than the wires on thedevices system 1200 includes afirst device 1202 an asecond device 1204. The first device includes awire 1206 and thesecond device 1204 includes awire 1210. The first andsecond plates second devices wires - The first and
second plates FIG. 12 ) that determines the capacitive coupling between theplates plates plates FIGS. 12A and 12B , theplates respective wires plates wires wire 1210 is not aligned with thewire 1206 as shown inFIG. 12A , the capacitive coupling between theplates plates wire 1210 is aligned with thewire 1206 as shown inFIG. 12B , the capacitive coupling a between theplates plates - When a
command signal 1120 indicating to align thewires controller 1114, theprocessor 1118 generatescontrol signals 1112 to control the actuator to displace one or both of thedevices position sensor 1106 indicates that the capacitance between theplates command signal 1120 indicating to misalign the wires is received by thecontroller 1114, theprocessor 1118 generatescontrol signals 1112 to control the actuator to displace one or both of thedevices position sensor 1106 indicates that the capacitance between theplates system 1100 is describe above with reference toFIG. 12 and the alignment (or misalignment) ofwires - There is shown in
FIG. 13 aflow chart 1300 illustrating a method according to an embodiment of the invention that is described with reference to thesystem 1100 inFIG. 11 . Acommand signal 1120 is received instep 1302 indicating to align structures on the first andsecond devices second devices step 1304 in response to thecommand signal 1120. Aposition information signal 1110 is received instep 1306 indicating whether the structures on the first and second devices are aligned. - As described above, the
position information signal 1110 may be generated, for example, based on the coupling of signals between wires on the first and second devices or based on the alignment of other structures such as the plates shown inFIGS. 12A and 12B . For example, the level of coupling may be compared to a threshold level of coupling (e.g., capacitance with regard toFIGS. 12A and 12B ). As one or both of the devices are actuated relative to each other, when the level of coupling meets the threshold, the structures are determined to be aligned (as shown inFIG. 12B ). If the structures are aligned, as determined instep 1308, thecontroller 1114 controls theactuator 1108 to stop the displacement of the device(s) instep 1312. If it was determined instep 1308 that the structures are not aligned, thecontroller 1114 generates acontrol signal 1112 for theactuator 1108 to continue displacing the device(s) as indicated bystep 1310 and receiving theposition information signal 1110 indicating whether the wires are aligned instep 1306. - In an embodiment of the invention, the
method 1300 includes afurther step 1314 as shown in phantom inFIG. 13 . Once the structures are aligned, a force may be applied to at least one of the devices in a direction of the other device instep 1314. This force can bring the devices closer together to either connect the structures or to enhance the connection (or coupling) between the structures. In an embodiment of the invention, themethod 1300 includes yet anotherstep 1316 as shown in phantom. The first and second devices are bonded or coupled to each other instep 1316. Embodiments of the invention encompass bonding the first and second devices to each other via fusion bonding, solder (or eutectic) bonding or anodic bonding. Embodiments of the invention also encompass bonding the first and second devices to each other using an adhesive, such as an epoxy, applied to at least one of the devices to fixably connect the devices when the applied force brings them together. - There is shown in
FIG. 14 aflow chart 1400 illustrating another method according to an embodiment of the invention that is described with reference to thesystem 1100 inFIG. 11 . The method ofFIG. 14 includes an initialization procedure and an alignment procedure. During the initialization procedure, thesystem 1100 identifies positions where the wires in the first andsecond devices memory 1116. In the alignment procedure, the stored position information is used to control theactuator 1108 to displace the device(s) 1102, 1104 to align the structures on the first andsecond devices command signal 1120. - In the initialization procedure, at least one of the first and second devices is displaced relative to the other device in
step 1402. Aposition information signal 1110 is received indicating the relative positions of (or the alignment of) the structures on the first andsecond devices step 1404. If the structures are determined to be aligned (or misaligned depending on the command signal) instep 1408, the position information identifying the position of the displaced device(s) is stored inmemory 1116 instep 1410. In an embodiment of the invention, the controller stores position information from thesensor 1106 corresponding to one or more positions of thesecond device 1104. Thecontroller 1114 can then control theactuator 1108 to displace thesecond device 1104 in response to the stored position information. - In an embodiment of the invention, the devices are actuated relative to each other using an electrostatic actuator. When a peak (or threshold) level of coupling or alignment between structures (e.g., a pair of wires) is detected, a memory record identifying the structures (e.g., the pair of wires) and the position of the devices is stored in the
memory 1116. In an embodiment of the invention, the position of the devices (position information) is stored in the memory in the form of information for controlling theactuator 1108 to displace thedevices - If the structures are determined not to be aligned in
step 1408, the device(s) is further displaced until the structures are aligned. After each position is stored, if there are further positions to identify as determined instep 1412, the device(s) is further displaced instep 1402 and the initialization procedure is repeated for each position to be identified. - In an embodiment of the invention, the initialization procedure is performed by moving one of the
devices memory 1116. - Once the positions are identified, the alignment procedure begins by receiving a
command signal 1120 instep 1414 indicating which structures to couple to each other. The system reads the position information from thememory 1116 corresponding to the structures indicated in thecommand signal 1120 instep 1416. Thecontroller 1114 outputs acontrol signal 1112 to the actuator in response to the stored position information to control theactuator 1108 to position thedevice 1104 for alignment of the structures on the devices instep 1418. Different structures may then be aligned by receiving anothercommand signal 1120 as indicated byarrow 1420. - There is shown in
FIG. 15 asystem 1500 including a plurality of devices 1502, 1504 according to an embodiment of the invention. The devices 1502, 1504 are each coupled to arespective substrate first substrate 1512 includes a plurality of devices 1502 that each corresponds to one of the devices 1504 on thesecond substrate 1514. The first andsecond substrate - A cross-sectional view of the
system 1500 taken along lines 16-16 is shown inFIG. 16A . As shown inFIG. 16A , the first andsecond substrates substrates FIG. 16B and are then brought together as shown inFIG. 16C . As illustrated inFIG. 16C , although thesubstrates first substrate 1512 are not necessarily aligned with corresponding devices 1504 on thesecond substrate 1514. Somedevices other devices - The misalignment may result from manufacturing tolerances that cause the devices 1502, 1504 to be inaccurately positioned on their respective substrates. In an embodiment of the invention, the
substrates wafers substrate - In an embodiment of the invention as shown in
FIG. 17 , one or both of the devices 1702, 1704 may be flexibly coupled to itsrespective substrate FIG. 17 asystem 1700 including a plurality ofdevices 1702A-D that are each flexibly coupled to asubstrate 1712 byflexible connectors 1722. Theother substrate 1714 has somedevices 1704A, C, D that are fixably coupled to thesubstrate 1714 and anotherdevice 1704B that is flexibly coupled to thesubstrate 1714 byflexible connectors 1724. - In an embodiment of the invention, the
flexible connectors like structure substrates flexible connectors substrates FIG. 17 with fourflexible connectors 1722, 1744 to thesubstrates substrates - There is shown in
FIGS. 18A-D cross-sectional diagrams of thesystem 1700 taken along line 18-18 inFIG. 17 . Thesystem 1700 is illustrated in each ofFIGS. 18A-D in a different stage of a process of bonding the devices 1702 from onesubstrate 1712 to corresponding devices 1704 from anothersubstrate 1714. InFIG. 18A , thesubstrates FIG. 18B , the substrates have been brought together although their respective devices 1702, 1704 are shown as being out of alignment. - The misalignment of the devices 1702, 1704 may be corrected in the
system 1700 because at least one of the devices 1702, 1704 of each pair of devices is flexibly coupled to itsrespective substrate FIG. 18C , the devices 1702, 1704 have been aligned. In particular, 1702A can be moved to the left and into alignment withdevice 1704A which is fixed to itsrespective substrate 1714.Devices respective substrates other device device 1704B is actuated to the left as seen in the drawing to a position in alignment withdevice 1702B. - In an embodiment of the invention, the devices 1702, 1704 are positioned with respect to their substrates such that when the
substrates substrate 1712 are not in contact with the devices 1704 from theother substrate 1714. InFIG. 18C , although thesubstrates FIG. 18D , after the devices 1702, 1704 are aligned, the devices 1702, 1704 are brought together. As discussed above, the devices 1702, 1704 may be brought together to couple structures on corresponding devices either temporarily so they can later be actuated to another position or the devices 1702, 1704 may be brought together and bonded permanently. - In an embodiment of the invention, the devices are actuated electrostatically. There is shown in
FIG. 19 asystem 1900 including afirst device 1902 flexibly coupled withflexible connectors 1930 to afirst substrate 1912 and asecond device 1904 fixably coupled to asecond substrate 1914. Thesystem 1900 includes afirst actuator 1920 for actuating thefirst device 1902 in a first direction Y and asecond actuator 1922 for actuating thefirst device 1902 in a second direction X. In an embodiment of the invention, the first andsecond actuators - The
system 1900 also can include a pair of substantiallyparallel plates substrates plates respective devices - There is shown in
FIG. 20 asystem 2000 including afirst device 2002 flexibly coupled to afirst substrate 2012 byconnectors 2030 and asecond device 2004 flexibly coupled to asecond substrate 2014 byconnectors 2032. Thesystem 2000 includes a first actuator 2020 havingelectrodes 2020 a on thefirst device 2002 andelectrodes 2020 b on thesecond device 2004 for actuating the first andsecond devices second actuator 2022 haselectrodes 2022 a on thefirst device 2002 andelectrodes 2022 b on thesecond device 2004 for actuating the first andsecond devices - In an embodiment of the invention, the first and
second actuators 2020, 2022 electrostatically actuate the first andsecond devices devices devices devices - A cross-sectional diagram of a portion of an
exemplary system 2000 taken along line 21-21 is shown inFIG. 21 . Thesystem 2000 includes a structure 2106 formed on thesurface 2110 of thefirst device 2002 and astructure 2116 formed within thesecond device 2004. A plurality oftranslator electrodes 2020 b are coupled to thesecond device 2004 and a plurality ofstator electrodes 2020 a are coupled to thefirst device 2002. The translator and stator electrodes 2020 form the surface drive that actuates thedevices flexible conductors flexible conductors flexible connectors - In an embodiment of the invention, one or both of the
actuators 2020, 2022 also apply a force to thedevices devices FIGS. 18B-D , theelectrodes 2020, 2022 are activated and/or deactivated in the appropriate sequences to move thedevices FIG. 18B to their positions inFIG. 18C . Once aligned as shown inFIG. 18C , theelectrodes 2020, 2022 on the first andsecond devices devices FIG. 18D . - In an embodiment of the invention, voltages below a first voltage level are applied to the
electrodes 2020, 2022 to activate/deactivate theelectrodes 2020, 2022 to actuate thedevices electrodes 2020, 2022 are then activated with voltages above the first voltage level to actuate thedevices second devices respective electrodes 2020, 2022 are coupled to each other and the pressure or the current flow between the electrodes causes theelectrodes first device 2002 to fuse to theelectrodes second device 2004, thereby coupling thefirst device 2002 to thesecond device 2004. - In a system where the position of the structures is determinative, that is the position of the structures is known based on a command given to an actuator, multiple structures on the devices may be aligned without the initialization procedure described above with reference to
FIG. 14 . In other words, the position of the structures is known based on the command signal transmitted to the actuator(s) to position the devices. In such a system, structures on the devices may be aligned without a position sensor 1106 (shown in phantom inFIG. 11 ). For example, when the positions of the electrodes 2020, 2022 (inFIGS. 20 , 21) of thesystem 2000 shown inFIG. 20 are known relative to the position of thestructures 2106, 2116 of the first andsecond devices second devices - There is shown in
FIG. 22 aflow chart 2200 illustrating a method according to an embodiment of the invention for aligning wires in a system where the position of the structures is determinative. With reference to thesystem 1100 inFIG. 11 , the system receives asignal 1120 identifying structures to be aligned instep 2202. Thecontroller 1114 generates acontrol signal 1112 to an actuator instep 2204 to position the devices to align the identified structures. The first device and the second device may or may not (as illustrated in phantom box) be bonded or coupled to each other instep 2206. - The term “wire” as used herein refers to any substantially electrically-conducting material. In an embodiment of the invention, one or more of the wires are formed of a metal. In another embodiment of the invention, one or more of the wires are formed of a semiconductor material which, through doping or an applied electric field or a combination thereof, is substantially electrically conductive. A wire may be patterned, for example, using optical, x-ray, or imprint lithography techniques and may be fabricated using semiconductor processing techniques such as material deposition and etching.
- Although embodiments of the invention are described above as having a second device that is displaceable relative to the first device, embodiments of the invention encompass having a first device displaceable relative to the second device or both first and second devices displaceable relative to each other.
- The foregoing describes the invention in terms of embodiments foreseen by the inventors for which an enabling description was available, although insubstantial modifications of the invention, not presently foreseen may nonetheless represent equivalents thereto.
Claims (22)
1-31. (canceled)
32. A method of substantially electrically coupling a micrometer-scale or smaller geometry doped semiconductor region to a micrometer-scale or smaller geometry wire in a system wherein a first device has a surface and includes the doped semiconductor region extending along its surface, a second device has a surface opposite the surface of the first device and includes the wire extending through the second device to a position in proximity to the surface of the second device comprising:
displacing the first and second devices relative to each other;
receiving a signal from a sensor indicating the relative position of wire and the doped semiconductor region; and
determining whether the wire and the doped semiconductor region are aligned in response to the signal from the sensor.
33. The method according to claim 32 comprising determining whether the wire and the doped semiconductor region are aligned by sensing current flow through the doped semiconductor region.
34. The method according to claim 32 comprising electrostatically displacing one of the first and second devices relative to the other device.
35. The method according to claim 32 comprising stopping the displacement of the one of the first and second devices if the wire and the doped semiconductor region are aligned and continuing the displacement if the wire and the doped semiconductor region are not aligned.
36. The method according to claim 32 comprising applying an attractive force between the first and second devices.
37. The method according to claim 32 comprising storing position information in a memory.
38. A method of substantially electrically coupling a micrometer-scale or smaller geometry wire to one of a plurality of micrometer-scale or smaller geometry doped semiconductor regions in a system wherein a first device has a surface and includes the plurality of doped semiconductor regions extending along its surface, a second device has a surface opposite the surface of the first device and includes the wire extending through the second device to a position in proximity to the surface of the second device comprising:
receiving a signal identifying one of the doped semiconductor regions;
reading position information from memory corresponding to the identified doped semiconductor region; and
displacing one of the first and second devices in response to the position information.
39. The method according to claim 38 comprising applying an attractive force between the first and second devices.
40. The method according to claim 38 comprising electrostatically displacing one of the first and second devices relative to the other device.
41-47. (canceled)
48. A method of activating one of a plurality of micrometer-scale or smaller geometry doped semiconductor regions along a surface of a first device comprising:
receiving a command signal identifying the one of the plurality of doped semiconductor regions;
generating a control signal in response to the command signal;
actuating a second device relative to the first device in response to the control signal to align a conductor on the second device with the identified doped semiconductor region.
49. The method according to claim 48 comprising reading position information from a memory in response to the command signal and generating the control signal in response to the position information.
50. The method according to claim 48 comprising coupling the first and second devices.
51-52. (canceled)
53. The method of claim 31, further comprising:
in response to determining the wire and the doped semiconductor region are aligned, applying a force to at least one of the wire and the doped semiconductor region bringing the wire and the doped semiconductor region closer together to either connect the first and second devices or enhance coupling between the first and second devices.
54. The method of claim 53 , further comprising:
bonding the first and second devices together.
55. The method of claim 31 further comprising:
in response to determining the first and second devices wire and the doped semiconductor region are not aligned, moving the wire and the doped semiconductor region in small increments until the wire and the doped semiconductor region are aligned; and
storing a position of the wire and the doped semiconductor region when the wire and the doped semiconductor region are aligned.
56. The method of claim 38 , further comprising:
in response to determining the first and second devices are aligned, applying a force to at least one of the first and second devices bringing the first and second devices closer together to either connect or enhance coupling between the first and second devices.
57. The method of claim 56 , further comprising:
bonding the first and second devices together.
58. The method of claim 48 , further comprising:
in response to determining the conductor on the second device and the doped semiconductor region on the first device are aligned, applying a force to at least one of the first and second devices bringing the first and second devices closer together to either connect or enhance coupling between the first and second devices.
59. The method of claim 58 , further comprising:
bonding the first and second devices together.
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US20130052948A1 (en) * | 2011-08-31 | 2013-02-28 | Broadcom Corporation | Signal Detector of a Near Field Communications (NFC) Device for Efficient Signal Detection |
Also Published As
Publication number | Publication date |
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US20060131714A1 (en) | 2006-06-22 |
US7521784B2 (en) | 2009-04-21 |
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