US20090155952A1 - Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells - Google Patents
Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells Download PDFInfo
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- US20090155952A1 US20090155952A1 US11/956,069 US95606907A US2009155952A1 US 20090155952 A1 US20090155952 A1 US 20090155952A1 US 95606907 A US95606907 A US 95606907A US 2009155952 A1 US2009155952 A1 US 2009155952A1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
- H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the size, mass and cost of a satellite power system are dependent on the power and energy conversion efficiency of the solar cells used. Putting it another way, the size of the payload and the availability of on-board services are proportional to the amount of power provided.
- solar cells which act as the power conversion devices for the on-board power systems, become increasingly more important.
- FIG. 3 is a cross-sectional view of the solar cell of FIG. 2 after the next process step
- FIG. 4 is a cross-sectional view of the solar cell of FIG. 3 after the next process step
- FIG. 6B is a bottom plan view of a wafer in which the solar cells are fabricated
- FIG. 7 is a top plan view of the wafer of FIG. 6A after the next process step
- FIG. 15 is a cross-sectional view of the solar cell of FIG. 14 after the next process step.
- BSF layer 109 On top of the BSF layer 109 is deposited a sequence of heavily doped p-type and n-type layers 110 which forms a tunnel diode which is a circuit element to connect subcell A to subcell B.
- a window layer 111 is deposited on top of the tunnel diode layers 110 .
- the window layer 111 used in the subcell B also operates to reduce the recombination loss.
- the window layer 111 also improves the passivation of the cell surface of the underlying junctions. It should be apparent to one skilled in the art, that additional layer(s) may be added or deleted in the cell structure without departing from the scope of the present invention.
- a BSF layer 114 which performs the same function as the BSF layer 109 .
- a p++/n++tunnel diode 115 is deposited over the BSF layer 114 similar to the layers 110 , again forming a circuit element to connect subcell B to subcell C.
- a metamorphic layer (grading interlayer) 116 is deposited over the barrier layer 116 a .
- Layer 116 is preferably a compositionally step-graded series of InGaAlAs layers with monotonically changing lattice constant that is intended to achieve a transition in lattice constant from subcell B to subcell C.
- the band gap of layer 116 is preferably 1.5 ev consistent with a value slightly greater than the band gap of the middle subcell B.
- an optional second barrier layer 116 b may be deposited over the InGaAlAs metamorphic layer 116 .
- the second barrier layer 116 b will typically have a slightly different composition than that of barrier layer 116 a.
- a window layer 117 is deposited over the barrier layer 116 b , this window layer operating to reduce the recombination loss in subcell “C”. It should be apparent to one skilled in the art that additional layers may be added or deleted in the cell structure without departing from the scope of the present invention.
- a BSF layer 120 is deposited on top of the cell C, the BSF layer performing the same function as the BSF layers 109 and 114 .
- a p+ contact layer 121 is deposited on the BSF layer 120 .
- FIG. 2 is a cross-sectional view of the solar cell of FIG. 1 after the next process step in which a metal contact layer 122 is deposited over the p+ semiconductor contact layer 121 .
- the metal is preferably Ti/Au/Ag/Au.
- FIG. 5B is a cross-sectional view of the solar cell of FIG. 5A with the orientation with the surrogate substrate 124 being at the bottom of the Figure. Subsequent Figures in this application will assume such orientation.
- each cell there are grid lines 501 (more particularly shown in cross-section in FIG. 10 ), an interconnecting bus line 502 , and a contact pad 503 .
- the geometry and number of grid and bus lines is illustrative and the present invention is not limited to the illustrated embodiment.
- FIG. 8 is a simplified cross-sectional view of the solar cell of FIG. 5B depicting just a few of the top layers and lower layers over the surrogate substrate 124 .
- FIG. 10 is a cross-sectional view of the solar cell of FIG. 9 after the next sequence of process steps in which a photoresist mask (not shown) is placed over the contact layer 105 to form the grid lines 501 .
- the grid lines 501 are deposited via evaporation and lithographically patterned and deposited over the contact layer 105 .
- the mask is lifted off to form the metal grid lines 501 .
- FIG. 12 is a cross-sectional view of the solar cell of FIG. 11 after the next process step in which an antireflective (ARC) dielectric coating layer 130 is applied over the entire surface of the “bottom” side of the wafer with the grid lines 501 .
- ARC antireflective
- FIG. 15 is a cross-sectional view of the solar cell of FIG. 14 In one embodiment after the next process step in which an adhesive is applied over the ARC layer 130 and a rigid coverglass attached thereto.
- the emitter doping decreases from approximately 5 ⁇ 10 18 per cubic centimeter in the region immediately adjacent the adjoining layer (e.g. layers 106 , 111 , or 117 ) to 5 ⁇ 10 17 per cubic centimeter in the region adjacent the p-n junction shown by the dotted line in FIG. 16 .
- the base doping increases exponentially from 1 ⁇ 10 16 per cubic centimeter adjacent the p-n junction to 1 ⁇ 10 18 per cubic centimeter adjacent the adjoining layer (e.g., layer 109 , 114 , or 120 ).
- the exponentially doped profile is the doping design which has been implemented and verified, other doping profiles may give rise to a linear varying collection field which may offer yet other advantages.
- a doping profile of e ⁇ x 2 / ⁇ 2 produces a linear field in the doped region which would be advantageous for both minority carrier collection and for radiation hardness at the end-of-life of the solar cell.
- Such other doping profiles in one or more base layer are within the scope of the present invention.
Abstract
Description
- This application is related to co-pending U.S. patent application Ser. No. 11/860,142 and 11/860,183 filed Sep. 24, 2007.
- This application is related to co-pending U.S. patent application Ser. No. 11/836,402 filed Aug. 8, 2007.
- This application is also related to co-pending U.S. patent application Ser. No. 11/616,596 filed Dec. 27, 2006.
- This application is also related to co-pending U.S. patent application Ser. No. 11/445,793 filed Jun. 2, 2006.
- This invention was made with government support under Contract No. FA9453-06-C-0345 awarded by the U.S. Air Force. The Government has certain rights in the invention.
- 1. Field of the Invention
- The present invention relates to the field of solar cell semiconductor devices, and particularly to multifunction solar cells including a metamorphic layer. Such devices also include solar cells known as inverted metamorphic solar cells.
- a. Description of the Related Art
- Photovoltaic cells, also called solar cells, are one of the most important new energy sources that have become available in the past several years. Considerable effort has gone into solar cell development. As a result, solar cells are currently being used in a number of commercial and consumer-oriented applications. While significant progress has been made in this area, the requirement for solar cells to meet the needs of more sophisticated applications has not kept pace with demand. Applications such as satellites used in data communications have dramatically increased the demand for solar cells with improved power and energy conversion characteristics.
- In satellite and other space related applications, the size, mass and cost of a satellite power system are dependent on the power and energy conversion efficiency of the solar cells used. Putting it another way, the size of the payload and the availability of on-board services are proportional to the amount of power provided. Thus, as the payloads become more sophisticated, solar cells, which act as the power conversion devices for the on-board power systems, become increasingly more important.
- Solar cells are often fabricated in vertical, multifunction structures, and disposed in horizontal arrays, with the individual solar cells connected together in a series. The shape and structure of an array, as well as the number of cells it contains, are determined in part by the desired output voltage and current.
- Inverted metamorphic solar cell structures such as described in M. W. Wanless et al., Lattice Mismatched Approaches for High Performance, III-V Photovoltaic Energy Converters (Conference Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Jan. 3-7, 2005, IEEE Press, 2005) present an important starting point for the development of future commercial high efficiency solar cells. The structures described in such prior art present a number of practical difficulties relating to the appropriate choice of materials and fabrication steps.
- Prior to the present invention, the materials and fabrication steps disclosed in the prior art have not been adequate to produce a commercially viable and energy efficient solar cell using an inverted metamorphic cell structure.
- The present invention provides a method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell, the method comprising: providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell having a base and an emitter on said substrate having a first band gap; forming a second solar subcell having a base and an emitter over said first solar subcell having a second band gap smaller than said first band gap; forming a grading interlayer over said second subcell, said grading interlayer having a third band gap greater than said second band gap; and forming a third solar subcell having a base and an emitter over said grading interlayer having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell, wherein at least one of the bases has an exponentially doped profile.
- In another aspect, the present invention provides a method of manufacturing a solar cell by providing a first substrate, depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell, including at least one base layer with exponential doping; mounting a surrogate substrate on top of the sequence of layers; and removing the first substrate.
- In another aspect the present invention provides a method of manufacturing a solar cell by providing a first substrate, depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell, including at least one base layer with exponential doping; mounting a surrogate substrate on top of the sequence of layers; and removing the first substrate. In another aspect, the present invention provides A method for forming a solar cell comprising forming a top cell including base and emitter layers composed of InGaP semiconductor material; forming a middle cell emitter layer of InGaP semiconductor material and a base layer of GaAs semiconductor material; and forming a bottom cell including an emitter and base layer of InGaAs semiconductor material, wherein at least one of the bases has an exponentially doped profile.
- The invention will be better and more fully appreciated by reference to the following detailed description when considered in conjunction with the accompanying drawings, wherein
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FIG. 1 is an enlarged cross-sectional view of a solar cell constructed according to the present invention; -
FIG. 2 is a cross-sectional view of the solar cell ofFIG. 1 after the next process step; -
FIG. 3 is a cross-sectional view of the solar cell ofFIG. 2 after the next process step; -
FIG. 4 is a cross-sectional view of the solar cell ofFIG. 3 after the next process step; -
FIG. 5A is a cross-sectional view of the solar cell ofFIG. 4 after the next process step in which the original substrate is removed; -
FIG. 5B is another cross-sectional view of the solar cell ofFIG. 5A with the surrogate substrate on the bottom of the Figure; -
FIG. 6A is a top plan view of a wafer in which the solar cells are fabricated; -
FIG. 6B is a bottom plan view of a wafer in which the solar cells are fabricated; -
FIG. 7 is a top plan view of the wafer ofFIG. 6A after the next process step; -
FIG. 8 is a cross-sectional view of the solar cell ofFIG. 5B after the next process step; -
FIG. 9 is a cross-sectional view of the solar cell ofFIG. 8 after the next process step; -
FIG. 10 is a cross-sectional view of the solar cell ofFIG. 9 after the next process step; -
FIG. 11 is a cross-sectional view of the solar cell ofFIG. 10 after the next process step; -
FIG. 12 is a cross-sectional view of the solar cell ofFIG. 11 after the next process step; -
FIG. 13 is a cross-sectional view of the solar cell ofFIG. 12 after the next process step; -
FIG. 14 is a cross-sectional view of the solar cell ofFIG. 13 after the next process step; -
FIG. 15 is a cross-sectional view of the solar cell ofFIG. 14 after the next process step; and -
FIG. 16 is a graph of the doping profile between the emitter and base layer in a subcell of the inverted metamorphic solar cell according to the present invention. - Details of the present invention will now be described including exemplary aspects and embodiments thereof. Referring to the drawings and the following description, like reference numbers are used to identify like or functionally similar elements, and are intended to illustrate major features of exemplary embodiments in a highly simplified diagrammatic manner. Moreover, the drawings are not intended to depict every feature of the actual embodiment nor the relative dimensions of the depicted elements, and are not drawn to scale.
-
FIG. 1 depicts the multifunction solar cell according to the present invention after formation of the three subcells A, B and C on a substrate. More particularly, there is shown asubstrate 101, which may be either gallium arsenide (GaAs), germanium (Ge), or other suitable material. In the case of a Ge substrate, anucleation layer 102 is deposited on the substrate. On the substrate, or over thenucleation layer 102, abuffer layer 103, and anetch stop layer 104 are further deposited. Acontact layer 105 is then deposited onlayer 104, and awindow layer 106 is deposited on the contact layer. The subcell A, consisting of ann+ emitter layer 107 and a p-type base layer 108, is then deposited on thewindow layer 106. - It should be noted that the multifunction solar cell structure could be formed by any suitable combination of group III to V elements listed in the periodic table subject to lattice constant and band gap requirements, wherein the group III includes boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (T). The group IV includes carbon (C), silicon (Si), germanium (Ge), and tin (Sn). The group V includes nitrogen (N), phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi).
- In the preferred embodiment, the
emitter layer 107 is composed of InGa(Al)P and thebase layer 108 is composed of InGa(Al)P. The aluminum or Al term in parenthesis in the preceding formula means that Al is an optional constituent, and in this instance may be used in an amount ranging from 0% to 30%. The doping profile of the emitter andbase layers FIG. 16 . - On top of the
base layer 108 is deposited a back surface field (“BSF”)layer 109 used to reduce recombination loss. - The
BSF layer 109 drives minority carriers from the region near the base/BSF interface surface to minimize the effect of recombination loss. In other words, aBSF layer 109 reduces recombination loss at the backside of the solar subcell A and thereby reduces the recombination in the base. - On top of the
BSF layer 109 is deposited a sequence of heavily doped p-type and n-type layers 110 which forms a tunnel diode which is a circuit element to connect subcell A to subcell B. - On top of the tunnel diode layers 110 a
window layer 111 is deposited. Thewindow layer 111 used in the subcell B also operates to reduce the recombination loss. Thewindow layer 111 also improves the passivation of the cell surface of the underlying junctions. It should be apparent to one skilled in the art, that additional layer(s) may be added or deleted in the cell structure without departing from the scope of the present invention. - On top of the
window layer 111 the layers of subcell B are deposited: theemitter layer 112, and the p-type base layer 113. These layers are preferably composed of InGaP and In0.015GaAs respectively, (for a Ge growth template) although any other suitable materials consistent with lattice constant and band gap requirements may be used as well. The doping profile oflayers FIG. 16 . - On top of the cell B is deposited a
BSF layer 114 which performs the same function as theBSF layer 109. A p++/n++tunnel diode 115 is deposited over theBSF layer 114 similar to thelayers 110, again forming a circuit element to connect subcell B to subcell C. - A
barrier layer 116 a, preferably composed of InGa(Al)P, is deposited over thetunnel diode 115, to a thickness of about 1.0 micron. Such barrier layer is intended to prevent threading dislocations from propagating, either opposite to the direction of growth into the middle and top subcells B and C, or in the direction of growth into the bottom subcell A, and are more particularly described in copending U.S. patent application Ser. No. 11/860,183, filed Sep. 24, 2007. - A metamorphic layer (grading interlayer) 116 is deposited over the
barrier layer 116 a.Layer 116 is preferably a compositionally step-graded series of InGaAlAs layers with monotonically changing lattice constant that is intended to achieve a transition in lattice constant from subcell B to subcell C. The band gap oflayer 116 is preferably 1.5 ev consistent with a value slightly greater than the band gap of the middle subcell B. - In one embodiment, as suggested in the Wanless et al. paper, the step grade contains nine compositionally graded InGaP steps with each step layer having a thickness of 0.25 micron. In the preferred embodiment, the
layer 116 is composed of InGaAlAs, with monotonically changing lattice constant. - In another embodiment of the present invention, an optional
second barrier layer 116 b may be deposited over the InGaAlAsmetamorphic layer 116. Thesecond barrier layer 116 b will typically have a slightly different composition than that ofbarrier layer 116 a. - A
window layer 117 is deposited over thebarrier layer 116 b, this window layer operating to reduce the recombination loss in subcell “C”. It should be apparent to one skilled in the art that additional layers may be added or deleted in the cell structure without departing from the scope of the present invention. - On top of the
window layer 117, the layers of cell C are deposited: then+ emitter layer 118, and the p-type base layer 119. These layers are preferably composed of InGaAs, although an other suitable materials consistent with lattice constant and band gap requirements may be used as well. The doping profile oflayers FIG. 16 . - A
BSF layer 120 is deposited on top of the cell C, the BSF layer performing the same function as the BSF layers 109 and 114. - Finally a
p+ contact layer 121 is deposited on theBSF layer 120. - It should be apparent to one skilled in the art, that additional layer(s) may be added or deleted in the cell structure without departing from the scope of the present invention.
-
FIG. 2 is a cross-sectional view of the solar cell ofFIG. 1 after the next process step in which ametal contact layer 122 is deposited over the p+semiconductor contact layer 121. The metal is preferably Ti/Au/Ag/Au. -
FIG. 3 is a cross-sectional view of the solar cell ofFIG. 2 after the next process step in which anadhesive layer 123 is deposited over themetal layer 122. The adhesive is preferably Wafer Bond (manufactured by Brewer Science, Inc. of Rolla, Mo.). -
FIG. 4 is a cross-sectional view of the solar cell ofFIG. 3 after the next process step in which asurrogate substrate 124, preferably sapphire, is attached. The surrogate substrate is about 40 mils in thickness, and is perforated with holes about 1 mm in diameter, spaced 4 mm apart, to aid in subsequent removal of the adhesive and the substrate. -
FIG. 5A is a cross-sectional view of the solar cell ofFIG. 4 after the next process step in which the original substrate is removed by a sequence of lapping and/or etching steps in which thesubstrate 101, thebuffer layer 103, and theetch stop layer 104, are removed. The choice of a particular etchant is growth substrate dependent. -
FIG. 5B is a cross-sectional view of the solar cell ofFIG. 5A with the orientation with thesurrogate substrate 124 being at the bottom of the Figure. Subsequent Figures in this application will assume such orientation. -
FIG. 6A is a top plan view of a wafer in which for solar cells are implemented. The depiction of four cells is for illustration for purposes only, and the present invention is not limited to any specific number of cells per wafer. - In each cell there are grid lines 501 (more particularly shown in cross-section in
FIG. 10 ), an interconnectingbus line 502, and acontact pad 503. The geometry and number of grid and bus lines is illustrative and the present invention is not limited to the illustrated embodiment. -
FIG. 6B is a bottom plan view of the wafer with four solar cells shown inFIG. 6A . -
FIG. 7 is a top plan view of the wafer ofFIG. 6A after the next process step in which amesa 510 is etched around the periphery of each cell using phosphide and arsenide etchants. -
FIG. 8 is a simplified cross-sectional view of the solar cell ofFIG. 5B depicting just a few of the top layers and lower layers over thesurrogate substrate 124. -
FIG. 9 is a cross-sectional view of the solar cell ofFIG. 8 after the next process step in which theetch stop layer 104 is removed by a HCl/H2O solution. -
FIG. 10 is a cross-sectional view of the solar cell ofFIG. 9 after the next sequence of process steps in which a photoresist mask (not shown) is placed over thecontact layer 105 to form the grid lines 501. The grid lines 501 are deposited via evaporation and lithographically patterned and deposited over thecontact layer 105. The mask is lifted off to form the metal grid lines 501. -
FIG. 11 is a cross-sectional view of the solar cell ofFIG. 10 after the next process step in which the grid lines are used as a mask to etch down the surface to thewindow layer 106 using a citric acid/peroxide etching mixture. -
FIG. 12 is a cross-sectional view of the solar cell ofFIG. 11 after the next process step in which an antireflective (ARC)dielectric coating layer 130 is applied over the entire surface of the “bottom” side of the wafer with the grid lines 501. -
FIG. 13 is a cross-sectional view of the solar cell ofFIG. 12 after the next process step in which themesa 510 is etched down to themetal layer 122 using phosphide and arsenide etchants. The cross-section in the figure is depicted as seen from the A-A plane shown inFIG. 7 . One or more silver electrodes are then welded to the contact pad(s). -
FIG. 14 is a cross-sectional view of the solar cell ofFIG. 13 after the next process step after thesurrogate substrate 124 and adhesive 123 are removed by EKC 922. The preferred perforations provided in the surrogate substrate have a diameter of 0.033 inches, and are separated by 0.152 inches. -
FIG. 15 is a cross-sectional view of the solar cell ofFIG. 14 In one embodiment after the next process step in which an adhesive is applied over theARC layer 130 and a rigid coverglass attached thereto. - In a different embodiment, the solar cell of
FIG. 13 may be initially mounted on a support, and thesurrogate substrate 124 and adhesive 123 subsequently removed. Such a support may be the rigid coverglass mounted by an adhesive, as depicted inFIG. 15 . -
FIG. 16 is a graph of the doping profile between the emitter and base layer in a subcell of a metamorphic solar cell according to the present invention in a first embodiment. - As noted above, the doping profile of the emitter and base layers depicted in
FIG. 16 may be implemented in any one or more of the subcells of the triple junction solar cell of the present invention. - The specific doping profile according to the present invention is illustrated in the Figure: the emitter doping decreases from approximately 5×1018 per cubic centimeter in the region immediately adjacent the adjoining layer (e.g. layers 106, 111, or 117) to 5×1017 per cubic centimeter in the region adjacent the p-n junction shown by the dotted line in
FIG. 16 . The base doping increases exponentially from 1×1016 per cubic centimeter adjacent the p-n junction to 1×1018 per cubic centimeter adjacent the adjoining layer (e.g.,layer - The absolute value of the collection field generated by an exponential doping gradient exp[−x/λ] is given by the constant electric field of magnitude E=(kT/q(1/λ))(exp[−Xb/λ]), where k is the Boltzmann constant, T is the absolute temperature in degrees Kelvin, q is the absolute value of electronic charge, and λ is a parameter characteristic of the doping decay.
- The efficacy of the present invention has been demonstrated in a test solar cell which incorporated an exponential doping profile in the 3 μm thick base layer of the bottom subcell, according to the present invention. Following measurements of the electrical parameters of the test cell, there was observed a 6.7% increase in current collection. The measurements indicated an open circuit voltage (Voc) equal to at least 3.014V, a short circuit current (Jsc) of at least 16.55 mA/cm, and a fill factor (FF) of at least 0.86 at AMO.
- The exponential doping profile taught by the present invention produces a constant field in the doped region. In the particular triple junction solar cell materials and structure of the present invention, the bottom cell has the smallest short circuit current among all the subcells. In a triple junction solar cell, the individual subcells are stacked and form a series circuit. The total current flow in the entire cell is therefore limited by the smallest current produced in any one of the subcells. Thus, by increasing the short circuit current in the bottom cell by 6.7%, the current more closely approximates that of the higher subcells, and the overall efficiency of the triple junction solar cell is increased by 6.7% as well. In a solar triple junction cell with approximately 30% efficiency, the implementation of the present invention would increase efficiency by a factor of 1.067, i.e. to 32.01%. Such an increase in overall efficiency is substantial in the field of solar cell technology. In addition to an increase in efficiency, the collection field created by the exponential doping profile will enhance the radiation hardness of the solar cell, which is important for spacecraft applications.
- Although the exponentially doped profile is the doping design which has been implemented and verified, other doping profiles may give rise to a linear varying collection field which may offer yet other advantages. For example, a doping profile of e−x
2 /λ2 produces a linear field in the doped region which would be advantageous for both minority carrier collection and for radiation hardness at the end-of-life of the solar cell. Such other doping profiles in one or more base layer are within the scope of the present invention. - The doping profiles depicted herein are merely illustrative, and other more complex profiles may be utilized as would be apparent to those skilled in the art without departing from the scope of the present invention.
- It will be understood that each of the elements described above, or two or more together, also may find a useful application in other types of constructions differing from the types of constructions differing from the types described above.
- While the invention has been illustrated and described as embodied in a inverted metamorphic multijunction solar cell, it is not intended to be limited to the details shown, since various modifications and structural changes may be made without departing in any way from the spirit of the present invention.
- Without further analysis, the foregoing will so fully reveal the gist of the present invention that others can, by applying current knowledge, readily adapt it for various applications without omitting features that, from the standpoint of prior art, fairly constitute essential characteristics of the generic or specific aspects of this invention and, therefore, such adaptations should and are intended to be comprehended within the meaning and range of equivalence of the following claims.
Claims (19)
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US11/956,069 US20090155952A1 (en) | 2007-12-13 | 2007-12-13 | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
US12/187,454 US7727795B2 (en) | 2007-12-13 | 2008-08-07 | Exponentially doped layers in inverted metamorphic multijunction solar cells |
TW097132608A TWI355091B (en) | 2007-12-13 | 2008-08-26 | Exponentially doped layers in inverted metamorphic |
CNA2008101495330A CN101459204A (en) | 2007-12-13 | 2008-09-10 | Exponentially doped layers in inverted metamorphic multijunction sloar cells |
JP2008269598A JP5318522B2 (en) | 2007-12-13 | 2008-10-20 | Exponentially doped multiple layers in an inverted metamorphic multijunction solar cell |
EP08021551.0A EP2073276B8 (en) | 2007-12-13 | 2008-12-11 | Exponentially doped layers in inverted metamorphic multijunction solar cells |
JP2013105060A JP5456923B2 (en) | 2007-12-13 | 2013-05-17 | Exponentially doped multiple layers in an inverted metamorphic multijunction solar cell |
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US9214586B2 (en) | 2010-04-30 | 2015-12-15 | Solar Junction Corporation | Semiconductor solar cell package |
TWI414073B (en) * | 2010-07-20 | 2013-11-01 | Cesi Ct Elettrotecnico Sperimentale Italiano Giacinto Motta S P A | Photovoltaic cell having a high conversion efficiency |
KR20120034965A (en) | 2010-10-04 | 2012-04-13 | 삼성전자주식회사 | Solar cell |
TWI427807B (en) * | 2010-10-28 | 2014-02-21 | Atomic Energy Council | A solar cell structure with improved collection efficiency of photocurrent |
US8962988B2 (en) | 2011-02-03 | 2015-02-24 | Solar Junction Corporation | Integrated semiconductor solar cell package |
US8859892B2 (en) | 2011-02-03 | 2014-10-14 | Solar Junction Corporation | Integrated semiconductor solar cell package |
US8766087B2 (en) | 2011-05-10 | 2014-07-01 | Solar Junction Corporation | Window structure for solar cell |
CN102244114A (en) * | 2011-06-22 | 2011-11-16 | 厦门市三安光电科技有限公司 | High-concentration multi-junction solar cell and preparation method thereof |
JP5758257B2 (en) * | 2011-09-30 | 2015-08-05 | シャープ株式会社 | Laminate for producing compound semiconductor solar cell, compound semiconductor solar cell and method for producing the same |
US9263611B2 (en) | 2011-11-17 | 2016-02-16 | Solar Junction Corporation | Method for etching multi-layer epitaxial material |
CN102651417B (en) * | 2012-05-18 | 2014-09-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-knot cascading solar battery and preparation method thereof |
CN102779890A (en) * | 2012-08-14 | 2012-11-14 | 厦门乾照光电股份有限公司 | Inverted triple-junction solar cell and method for manufacturing same |
US9142615B2 (en) | 2012-10-10 | 2015-09-22 | Solar Junction Corporation | Methods and apparatus for identifying and reducing semiconductor failures |
US9768326B1 (en) | 2013-08-07 | 2017-09-19 | Solaero Technologies Corp. | Fabrication of solar cells with electrically conductive polyimide adhesive |
US9214594B2 (en) | 2013-08-07 | 2015-12-15 | Solaero Technologies Corp. | Fabrication of solar cells with electrically conductive polyimide adhesive |
US9929300B2 (en) | 2015-11-13 | 2018-03-27 | Solaero Technologies Corp. | Multijunction solar cells with electrically conductive polyimide adhesive |
CN106784108B (en) * | 2015-11-20 | 2019-05-31 | 北京创昱科技有限公司 | A kind of binode Thinfilm solar cell assembly and preparation method thereof |
CN106784127B (en) * | 2015-11-20 | 2019-02-01 | 北京创昱科技有限公司 | A kind of binode Thinfilm solar cell assembly and preparation method thereof |
US10090420B2 (en) | 2016-01-22 | 2018-10-02 | Solar Junction Corporation | Via etch method for back contact multijunction solar cells |
US11316053B2 (en) * | 2016-08-26 | 2022-04-26 | Sol Aero Technologies Corp. | Multijunction solar cell assembly |
US9680035B1 (en) | 2016-05-27 | 2017-06-13 | Solar Junction Corporation | Surface mount solar cell with integrated coverglass |
US11011660B1 (en) | 2018-07-17 | 2021-05-18 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell |
WO2020247691A1 (en) * | 2019-06-04 | 2020-12-10 | Solar Junction Corporation | Dilute nitride optical absorption layers having graded doping |
US20230079215A1 (en) * | 2021-09-01 | 2023-03-16 | Solaria Corporation | Solar Device Fabrication Limiting Power Conversion Losses |
CN114335208B (en) * | 2022-03-16 | 2022-06-10 | 南昌凯迅光电股份有限公司 | Novel gallium arsenide solar cell and manufacturing method thereof |
Citations (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3488834A (en) * | 1965-10-20 | 1970-01-13 | Texas Instruments Inc | Microelectronic circuit formed in an insulating substrate and method of making same |
US3964155A (en) * | 1972-02-23 | 1976-06-22 | The United States Of America As Represented By The Secretary Of The Navy | Method of planar mounting of silicon solar cells |
US4001864A (en) * | 1976-01-30 | 1977-01-04 | Gibbons James F | Semiconductor p-n junction solar cell and method of manufacture |
US4255211A (en) * | 1979-12-31 | 1981-03-10 | Chevron Research Company | Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface |
US4338480A (en) * | 1980-12-29 | 1982-07-06 | Varian Associates, Inc. | Stacked multijunction photovoltaic converters |
US4393576A (en) * | 1980-09-26 | 1983-07-19 | Licenta Patent-Verwaltungs-Gmbh | Method of producing electrical contacts on a silicon solar cell |
US4612408A (en) * | 1984-10-22 | 1986-09-16 | Sera Solar Corporation | Electrically isolated semiconductor integrated photodiode circuits and method |
US4881979A (en) * | 1984-08-29 | 1989-11-21 | Varian Associates, Inc. | Junctions for monolithic cascade solar cells and methods |
US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5021360A (en) * | 1989-09-25 | 1991-06-04 | Gte Laboratories Incorporated | Method of farbicating highly lattice mismatched quantum well structures |
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US5217539A (en) * | 1991-09-05 | 1993-06-08 | The Boeing Company | III-V solar cells and doping processes |
US5322572A (en) * | 1989-11-03 | 1994-06-21 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5342453A (en) * | 1992-11-13 | 1994-08-30 | Midwest Research Institute | Heterojunction solar cell |
US5376185A (en) * | 1993-05-12 | 1994-12-27 | Midwest Research Institute | Single-junction solar cells with the optimum band gap for terrestrial concentrator applications |
US5479032A (en) * | 1994-07-21 | 1995-12-26 | Trustees Of Princeton University | Multiwavelength infrared focal plane array detector |
US5510272A (en) * | 1993-12-24 | 1996-04-23 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating solar cell |
US5944913A (en) * | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
US6165873A (en) * | 1998-11-27 | 2000-12-26 | Nec Corporation | Process for manufacturing a semiconductor integrated circuit device |
US6180432B1 (en) * | 1998-03-03 | 2001-01-30 | Interface Studies, Inc. | Fabrication of single absorber layer radiated energy conversion device |
US6239354B1 (en) * | 1998-10-09 | 2001-05-29 | Midwest Research Institute | Electrical isolation of component cells in monolithically interconnected modules |
US6252287B1 (en) * | 1999-05-19 | 2001-06-26 | Sandia Corporation | InGaAsN/GaAs heterojunction for multi-junction solar cells |
US6281426B1 (en) * | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
US6300558B1 (en) * | 1999-04-27 | 2001-10-09 | Japan Energy Corporation | Lattice matched solar cell and method for manufacturing the same |
US6300557B1 (en) * | 1998-10-09 | 2001-10-09 | Midwest Research Institute | Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters |
US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
US20020117675A1 (en) * | 2001-02-09 | 2002-08-29 | Angelo Mascarenhas | Isoelectronic co-doping |
US6482672B1 (en) * | 1997-11-06 | 2002-11-19 | Essential Research, Inc. | Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates |
US20030070707A1 (en) * | 2001-10-12 | 2003-04-17 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device |
US6660928B1 (en) * | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
US20030226952A1 (en) * | 2002-06-07 | 2003-12-11 | Clark William R. | Three-terminal avalanche photodiode |
US6690041B2 (en) * | 2002-05-14 | 2004-02-10 | Global Solar Energy, Inc. | Monolithically integrated diodes in thin-film photovoltaic devices |
US20040079408A1 (en) * | 2002-10-23 | 2004-04-29 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
US20040200523A1 (en) * | 2003-04-14 | 2004-10-14 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
US20050211291A1 (en) * | 2004-03-23 | 2005-09-29 | The Boeing Company | Solar cell assembly |
US6951819B2 (en) * | 2002-12-05 | 2005-10-04 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
US20050274411A1 (en) * | 2004-06-15 | 2005-12-15 | King Richard R | Solar cells having a transparent composition-graded buffer layer |
US20060021565A1 (en) * | 2004-07-30 | 2006-02-02 | Aonex Technologies, Inc. | GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
US20060112986A1 (en) * | 2004-10-21 | 2006-06-01 | Aonex Technologies, Inc. | Multi-junction solar cells and methods of making same using layer transfer and bonding techniques |
US7071407B2 (en) * | 2002-10-31 | 2006-07-04 | Emcore Corporation | Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
US20060144435A1 (en) * | 2002-05-21 | 2006-07-06 | Wanlass Mark W | High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters |
US20060162768A1 (en) * | 2002-05-21 | 2006-07-27 | Wanlass Mark W | Low bandgap, monolithic, multi-bandgap, optoelectronic devices |
US7166520B1 (en) * | 2005-08-08 | 2007-01-23 | Silicon Genesis Corporation | Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process |
US20070137694A1 (en) * | 2005-12-16 | 2007-06-21 | The Boeing Company | Notch filter for triple junction solar cells |
US20070218649A1 (en) * | 2004-11-17 | 2007-09-20 | Stmicroelectronics Sa | Semiconductor wafer thinning |
US20070272946A1 (en) * | 2006-04-04 | 2007-11-29 | Francois Pagette | Silicon germanium emitter |
US20070277873A1 (en) * | 2006-06-02 | 2007-12-06 | Emcore Corporation | Metamorphic layers in multijunction solar cells |
US20080029151A1 (en) * | 2006-08-07 | 2008-02-07 | Mcglynn Daniel | Terrestrial solar power system using III-V semiconductor solar cells |
US20080149173A1 (en) * | 2006-12-21 | 2008-06-26 | Sharps Paul R | Inverted metamorphic solar cell with bypass diode |
US20080185038A1 (en) * | 2007-02-02 | 2008-08-07 | Emcore Corporation | Inverted metamorphic solar cell with via for backside contacts |
US20080245409A1 (en) * | 2006-12-27 | 2008-10-09 | Emcore Corporation | Inverted Metamorphic Solar Cell Mounted on Flexible Film |
US20090038679A1 (en) * | 2007-08-09 | 2009-02-12 | Emcore Corporation | Thin Multijunction Solar Cells With Plated Metal OHMIC Contact and Support |
US20090078309A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
US20090078311A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
US20090078308A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Thin Inverted Metamorphic Multijunction Solar Cells with Rigid Support |
US20090223554A1 (en) * | 2008-03-05 | 2009-09-10 | Emcore Corporation | Dual Sided Photovoltaic Package |
US20090229658A1 (en) * | 2008-03-13 | 2009-09-17 | Emcore Corporation | Non-Isoelectronic Surfactant Assisted Growth In Inverted Metamorphic Multijunction Solar Cells |
US20090229662A1 (en) * | 2008-03-13 | 2009-09-17 | Emcore Corporation | Off-Cut Substrates In Inverted Metamorphic Multijunction Solar Cells |
US20090272438A1 (en) * | 2008-05-05 | 2009-11-05 | Emcore Corporation | Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell |
US20090272430A1 (en) * | 2008-04-30 | 2009-11-05 | Emcore Solar Power, Inc. | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells |
US20090288703A1 (en) * | 2008-05-20 | 2009-11-26 | Emcore Corporation | Wide Band Gap Window Layers In Inverted Metamorphic Multijunction Solar Cells |
US20100012174A1 (en) * | 2008-07-16 | 2010-01-21 | Emcore Corporation | High band gap contact layer in inverted metamorphic multijunction solar cells |
US20100012175A1 (en) * | 2008-07-16 | 2010-01-21 | Emcore Solar Power, Inc. | Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells |
US20100031994A1 (en) * | 2008-08-07 | 2010-02-11 | Emcore Corporation | Wafer Level Interconnection of Inverted Metamorphic Multijunction Solar Cells |
US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
US20100116327A1 (en) * | 2008-11-10 | 2010-05-13 | Emcore Corporation | Four junction inverted metamorphic multijunction solar cell |
US20100122724A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers |
US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
US20100147366A1 (en) * | 2008-12-17 | 2010-06-17 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector |
US20100186804A1 (en) * | 2009-01-29 | 2010-07-29 | Emcore Solar Power, Inc. | String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers |
US20100203730A1 (en) * | 2009-02-09 | 2010-08-12 | Emcore Solar Power, Inc. | Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells |
US20100206365A1 (en) * | 2009-02-19 | 2010-08-19 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers |
US20100229933A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells with a Supporting Coating |
US20100229913A1 (en) * | 2009-01-29 | 2010-09-16 | Emcore Solar Power, Inc. | Contact Layout and String Interconnection of Inverted Metamorphic Multijunction Solar Cells |
US20100229926A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer |
US20100233839A1 (en) * | 2009-01-29 | 2010-09-16 | Emcore Solar Power, Inc. | String Interconnection and Fabrication of Inverted Metamorphic Multijunction Solar Cells |
US20100233838A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Mounting of Solar Cells on a Flexible Substrate |
US20100248411A1 (en) * | 2008-08-12 | 2010-09-30 | Emcore Solar Power, Inc. | Demounting of Inverted Metamorphic Multijunction Solar Cells |
US20100282288A1 (en) * | 2009-05-06 | 2010-11-11 | Emcore Solar Power, Inc. | Solar Cell Interconnection on a Flexible Substrate |
US20110030774A1 (en) * | 2009-08-07 | 2011-02-10 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells with Back Contacts |
US20110041898A1 (en) * | 2009-08-19 | 2011-02-24 | Emcore Solar Power, Inc. | Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065765B2 (en) * | 1982-12-23 | 1994-01-19 | 株式会社半導体エネルギ−研究所 | Photoelectric conversion device |
JPS63244887A (en) * | 1987-03-31 | 1988-10-12 | Sharp Corp | Amorphous solar cell |
JPH0472773A (en) * | 1990-07-13 | 1992-03-06 | Hitachi Cable Ltd | Multilayer junction type solar cell |
DE69435205D1 (en) | 1993-12-14 | 2009-05-28 | Spectrolab Inc | Thin semiconductor device and manufacturing method |
US8101851B2 (en) | 2003-07-22 | 2012-01-24 | Akzo Nobel N.V. | Process for manufacturing a solar cell foil using a temporary substrate |
-
2007
- 2007-12-13 US US11/956,069 patent/US20090155952A1/en not_active Abandoned
-
2008
- 2008-08-07 US US12/187,454 patent/US7727795B2/en active Active
- 2008-08-26 TW TW097132608A patent/TWI355091B/en not_active IP Right Cessation
- 2008-09-10 CN CNA2008101495330A patent/CN101459204A/en active Pending
- 2008-10-20 JP JP2008269598A patent/JP5318522B2/en active Active
- 2008-12-11 EP EP08021551.0A patent/EP2073276B8/en active Active
-
2013
- 2013-05-17 JP JP2013105060A patent/JP5456923B2/en active Active
Patent Citations (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3488834A (en) * | 1965-10-20 | 1970-01-13 | Texas Instruments Inc | Microelectronic circuit formed in an insulating substrate and method of making same |
US3964155A (en) * | 1972-02-23 | 1976-06-22 | The United States Of America As Represented By The Secretary Of The Navy | Method of planar mounting of silicon solar cells |
US4001864A (en) * | 1976-01-30 | 1977-01-04 | Gibbons James F | Semiconductor p-n junction solar cell and method of manufacture |
US4255211A (en) * | 1979-12-31 | 1981-03-10 | Chevron Research Company | Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface |
US4393576A (en) * | 1980-09-26 | 1983-07-19 | Licenta Patent-Verwaltungs-Gmbh | Method of producing electrical contacts on a silicon solar cell |
US4338480A (en) * | 1980-12-29 | 1982-07-06 | Varian Associates, Inc. | Stacked multijunction photovoltaic converters |
US4881979A (en) * | 1984-08-29 | 1989-11-21 | Varian Associates, Inc. | Junctions for monolithic cascade solar cells and methods |
US4612408A (en) * | 1984-10-22 | 1986-09-16 | Sera Solar Corporation | Electrically isolated semiconductor integrated photodiode circuits and method |
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US5021360A (en) * | 1989-09-25 | 1991-06-04 | Gte Laboratories Incorporated | Method of farbicating highly lattice mismatched quantum well structures |
US5322572A (en) * | 1989-11-03 | 1994-06-21 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5217539A (en) * | 1991-09-05 | 1993-06-08 | The Boeing Company | III-V solar cells and doping processes |
US5342453A (en) * | 1992-11-13 | 1994-08-30 | Midwest Research Institute | Heterojunction solar cell |
US5376185A (en) * | 1993-05-12 | 1994-12-27 | Midwest Research Institute | Single-junction solar cells with the optimum band gap for terrestrial concentrator applications |
US5510272A (en) * | 1993-12-24 | 1996-04-23 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating solar cell |
US5479032A (en) * | 1994-07-21 | 1995-12-26 | Trustees Of Princeton University | Multiwavelength infrared focal plane array detector |
US6281426B1 (en) * | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
US6482672B1 (en) * | 1997-11-06 | 2002-11-19 | Essential Research, Inc. | Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates |
US5944913A (en) * | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
US6180432B1 (en) * | 1998-03-03 | 2001-01-30 | Interface Studies, Inc. | Fabrication of single absorber layer radiated energy conversion device |
US6239354B1 (en) * | 1998-10-09 | 2001-05-29 | Midwest Research Institute | Electrical isolation of component cells in monolithically interconnected modules |
US6300557B1 (en) * | 1998-10-09 | 2001-10-09 | Midwest Research Institute | Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters |
US6165873A (en) * | 1998-11-27 | 2000-12-26 | Nec Corporation | Process for manufacturing a semiconductor integrated circuit device |
US6300558B1 (en) * | 1999-04-27 | 2001-10-09 | Japan Energy Corporation | Lattice matched solar cell and method for manufacturing the same |
US6252287B1 (en) * | 1999-05-19 | 2001-06-26 | Sandia Corporation | InGaAsN/GaAs heterojunction for multi-junction solar cells |
US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
US20020117675A1 (en) * | 2001-02-09 | 2002-08-29 | Angelo Mascarenhas | Isoelectronic co-doping |
US20030070707A1 (en) * | 2001-10-12 | 2003-04-17 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device |
US6660928B1 (en) * | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
US6690041B2 (en) * | 2002-05-14 | 2004-02-10 | Global Solar Energy, Inc. | Monolithically integrated diodes in thin-film photovoltaic devices |
US20060144435A1 (en) * | 2002-05-21 | 2006-07-06 | Wanlass Mark W | High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters |
US20060162768A1 (en) * | 2002-05-21 | 2006-07-27 | Wanlass Mark W | Low bandgap, monolithic, multi-bandgap, optoelectronic devices |
US20030226952A1 (en) * | 2002-06-07 | 2003-12-11 | Clark William R. | Three-terminal avalanche photodiode |
US20040079408A1 (en) * | 2002-10-23 | 2004-04-29 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
US7071407B2 (en) * | 2002-10-31 | 2006-07-04 | Emcore Corporation | Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
US6951819B2 (en) * | 2002-12-05 | 2005-10-04 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
US20040200523A1 (en) * | 2003-04-14 | 2004-10-14 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
US20050211291A1 (en) * | 2004-03-23 | 2005-09-29 | The Boeing Company | Solar cell assembly |
US20050274411A1 (en) * | 2004-06-15 | 2005-12-15 | King Richard R | Solar cells having a transparent composition-graded buffer layer |
US20060021565A1 (en) * | 2004-07-30 | 2006-02-02 | Aonex Technologies, Inc. | GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
US20060112986A1 (en) * | 2004-10-21 | 2006-06-01 | Aonex Technologies, Inc. | Multi-junction solar cells and methods of making same using layer transfer and bonding techniques |
US20070218649A1 (en) * | 2004-11-17 | 2007-09-20 | Stmicroelectronics Sa | Semiconductor wafer thinning |
US7166520B1 (en) * | 2005-08-08 | 2007-01-23 | Silicon Genesis Corporation | Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process |
US20070137694A1 (en) * | 2005-12-16 | 2007-06-21 | The Boeing Company | Notch filter for triple junction solar cells |
US20070272946A1 (en) * | 2006-04-04 | 2007-11-29 | Francois Pagette | Silicon germanium emitter |
US20100229932A1 (en) * | 2006-06-02 | 2010-09-16 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells |
US20070277873A1 (en) * | 2006-06-02 | 2007-12-06 | Emcore Corporation | Metamorphic layers in multijunction solar cells |
US20080029151A1 (en) * | 2006-08-07 | 2008-02-07 | Mcglynn Daniel | Terrestrial solar power system using III-V semiconductor solar cells |
US20090188546A1 (en) * | 2006-08-07 | 2009-07-30 | Mcglynn Daniel | Terrestrial solar power system using iii-v semiconductor solar cells |
US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
US20090314348A1 (en) * | 2006-08-07 | 2009-12-24 | Mcglynn Daniel | Terrestrial solar power system using iii-v semiconductor solar cells |
US20100236615A1 (en) * | 2006-12-21 | 2010-09-23 | Emcore Solar Power, Inc. | Integrated Semiconductor Structure with a Solar Cell and a Bypass Diode |
US20080149173A1 (en) * | 2006-12-21 | 2008-06-26 | Sharps Paul R | Inverted metamorphic solar cell with bypass diode |
US20080245409A1 (en) * | 2006-12-27 | 2008-10-09 | Emcore Corporation | Inverted Metamorphic Solar Cell Mounted on Flexible Film |
US20080185038A1 (en) * | 2007-02-02 | 2008-08-07 | Emcore Corporation | Inverted metamorphic solar cell with via for backside contacts |
US20090038679A1 (en) * | 2007-08-09 | 2009-02-12 | Emcore Corporation | Thin Multijunction Solar Cells With Plated Metal OHMIC Contact and Support |
US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
US20090078308A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Thin Inverted Metamorphic Multijunction Solar Cells with Rigid Support |
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US7727795B2 (en) | 2010-06-01 |
EP2073276A2 (en) | 2009-06-24 |
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