US20090186560A1 - Wafer de-chucking - Google Patents
Wafer de-chucking Download PDFInfo
- Publication number
- US20090186560A1 US20090186560A1 US12/299,302 US29930207A US2009186560A1 US 20090186560 A1 US20090186560 A1 US 20090186560A1 US 29930207 A US29930207 A US 29930207A US 2009186560 A1 US2009186560 A1 US 2009186560A1
- Authority
- US
- United States
- Prior art keywords
- fluid flow
- membrane
- substrate
- carrier head
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000012530 fluid Substances 0.000 claims abstract description 62
- 239000012528 membrane Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000005498 polishing Methods 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000005452 bending Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 27
- 239000002002 slurry Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
Definitions
- This invention relates generally to to a carrier head and, more particularly, to a carrier head and membrane for chemical mechanical polishing apparatus.
- Integrated circuits are typically formed on substrates, particularly silicon wafers, by the sequential deposition of conductive, semiconductive or insulative layers. After each layer is deposited and etched, the outer or uppermost surface of the substrate, i.e. the exposed surface of the substrate, becomes increasingly nonplanar. This nonplanar surface presents problems in the photolithographic steps of the integrated circuit fabrication process. Therefore, there is a need to periodically planarize the substrate surface.
- CMP Chemical mechanical polishing
- This method of planarization typically requires that the substrate be mounted on a carrier or polishing head.
- the carrier head brings the exposed surface of the substrate into contact with a rotating polishing pad and provides a controllable load on the substrate to push it against the polishing pad.
- a typical carrier head includes a flexible membrane with an inner surface that encloses a chamber and an outer surface that provides a substrate mounting surface. By controlling the pressure in the chamber, the load applied to the substrate can be varied.
- a typical CMP apparatus comprises one or more carrier heads 10 having a flexible membrane 12 sealed around an inner surface of the carrier head 10 , so as to define a chamber.
- a gas or fluid inlet/outlet 14 is defined in the carrier head 10 which is in fluid communication with the membrane 12 .
- a pressure control assembly (not shown) is provided for drawing air from the chamber defined by the membrane 12 or blowing air into the chamber.
- a substrate 16 is loaded into the carrier head 10 by bringing it into contact with the membrane 12 , and then a vacuum is created via the outlet 14 to hold the membrane 12 and the substrate 16 flat against the inner surface of the carrier head.
- the vacuum is maintained and the carrier head 10 lowers the substrate 16 into contact with a polishing pad 18 , and a slurry acts as the media for chemical mechanical polishing of the substrate (or wafer) 16 .
- the carrier head 10 loads and holds the substrate 16 against the polishing pad 18 .
- FIG. 1 a is a schematic diagram for illustrative purposes and that the polishing pad 18 usually has a larger diameter than the head 10 .
- the pad 18 is also in contact with the head via a peripheral retaining ring which keeps the wafer from slipping away during polishing.
- wafer is pressed against the pad by applying pressure to the membrane through the inlet 14 .
- FIG. 1 b of the drawings during unloading (or de-chucking) of a wafer 16 from the carrier head 10 of a CMP tool, air is blown, via the inlet 14 , into the chamber defined by the membrane 12 so as to inflate it.
- this process is intended to cause the wafer 16 to become dislodged from the membrane 12 .
- the wafer may bend and there is an increased risk that it may break. This risk is especially aapparent if there are scratches on the wafer 16 .
- US Patent Application Publication no. 2003 236056 A1 describes an arrangement whereby lateral sprays are used to assist wafer unloading by spraying fluid or gas between the wafer and the membrane.
- lateral pins or blades inserted between the wafer and the membrane
- the disadvantage is that sprays may cause the wafer to be blown in an undesired lateral direction if they are not well balanced on all sides, and blades have an inherent risk of breaking the wafer if the wafer sticks to the membrane.
- a carrier head for a chemical mechanical polishing apparatus comprising a contact surface on which is provided a membrane for receiving a substrate to be polished, said membrane forming a chamber with said contact surface, the carrier head further comprising a main fluid flow passage coupled at one end to said chamber and at an opposite end to means for creating a vacuum between said membrane and said contact surface, said membrane comprising at least one opening from which extends a respective fluid flow channel for selectively applying a vacuum or fluid pressure directly to said substrate, when in use.
- the respective fluid flow channel that extends from the at least one opening in said membrane comprises an integral tube.
- the carrier head comprises a respective guide passage for receiving the or each fluid flow channel.
- the or each fluid flow channel is received within a respective guide passage in slidable engagement, such that movement of the membrane is not restricted during polishing.
- the carrier head comprises a plurality of concentric guide passages for receiving a plurality of respective fluid flow channels extending from respective openings in said membrane.
- Said main fluid flow passage is preferably generally central relative to said contact surface and substrate and said one or more membrane openings and respective fluid flow channels are preferably off-centre relative to said contact surface and substrate.
- the present invention extends to a flexible membrane for use with a carrier head as defined above for forming a chamber with said contact surface, the membrane comprising one or more openings from the or each of which extends a respective fluid flow channel.
- a method of performing chemical mechanical polishing in respect of a substrate comprising the steps of providing a carrier head as defined above, loading a substrate onto the contact surface said carrier head, against said membraine via main fluid flow passage, performing chemical mechanical polishing in respect of said substrate, and unloading said substrate by applying fluid pressure thereto via said at least one opening and respective fluid flow channel whilst maintaining the application of a vacuum to said membrane via said main fluid flow passage.
- a vacuum is additionally applied to said substrate via said at least one opening and respective fluid flow channel.
- the present invention extends to a fluid pressure control system for performing the method defined above in a carrier head as defined above, the fluid pressure control system comprising an outlet coupled to said main fluid flow passage and said one or more fluid flow channels, and being configured to operate in a first loading mode, wherein a vacuum is applied to said main fluid flow passage and said one or more fluid flow channels for loading said substrate onto said carrier head and performing chemical mechanical polishing in respect thereof, and a second, unloading mode, wherein a vacuum is applied to said main fluid flow passage and fluid pressure is applied to said one or more fluid flow channels for unloading said substrate from said carrier head.
- FIG. 1 a is a schematic cross-sectional side view illustrating the principal components of a carrier head of a CMP tool according to the prior art, when a wafer has been loaded;
- FIG. 1 b is a schematic cross-sectional side view of the carrier head of FIG. 1 a during unloading of the wafer;
- FIG. 2 is a schematic side view illustrating the principal components of a carrier head according to an exemplary embodiment of the present invention.
- FIG. 3 is a schematic view of a membrane for use with the carrier head of FIG. 2 ;
- a carrier head 100 according to an exemplary embodiment of the present invention comprises an inner contact head 102 having a generally central main inlet/outlet 104 for generating the vacuum required to hold the wafer 106 flat against the membrane 108 and the polishing pad (not shown) during polishing, as in the prior art arrangement described with reference to FIG. 1 of the drawings.
- the membrane 108 is formed with a series of integral tubes 110 , and the contact head 102 is provided with a corresponding series of slots or passages 112 for receiving the membrane tubes 110 .
- the main inlet/outlet 104 and the membrane tubes 110 are connected to a fluid pressure control arrangement (not shown).
- fluid flow through the main inlet/outlet 104 is coupled to the membrane 108
- fluid flow through the membrane tubes 110 is coupled directly to the wafer 106 .
- a substrate 106 is loaded into the carrier head 100 by bringing it into contact with the membrane 108 , and then a vacuum is created via the outlet 104 and the membrane tubes 110 to hold the membrane 108 and the substrate 106 flat against the inner surface of the contact head 102 .
- the vacuum is maintained and the carrier head 100 lowers the substrate 106 into contact with a polishing pad (not shown).
- gas or fluid pressure is applied through inlet/outlet 104 , which applies a pressure between the wafer 106 and the polishing pad, and a slurry acts as the media for chemical mechanical polishing of the substrate (or wafer) 106 .
- the carrier head 100 loads and holds the substrate 106 against the polishing pad.
- the vacuum is re-applied through the inlet/outlet 104 so as to enable the carrier head 100 to lift the substrate 106 away from the polishing head.
- fluid e.g. air
- the fluid pressure control arrangement directly to the substrate surface, via the membrane tubes 110 , whilst the vacuum continues to be maintained via the main inlet/outlet 104 on the membrane 108 .
- the air pressure, applied directly to the wafer 106 overcomes the adhesive forces between the wafer 106 and the membrane 108 and causes the wafer 106 to be released, while the continued vacuum provided via the main inlet/outlet 104 prevents signfiicant inflation of the membrane 108 , and therefore prevents signficant bending of the wafer 106 .
- the membrane tubes 110 are not affixed to the corresponding guide passages 112 in the contact head 102 . As such, the membrane tubes 110 are mounted for slidable movement within the guide passages 112 and membrane movement is thus substantially unrestricted during polishing.
- the invention may also be embodied with less components than provided in the embodiments described here, wherein one component carries out multiple functions.
- the invention may also be embodied using more elements than depicted in FIG. 3 , wherein functions carried out by one component in the embodiment provided are distributed over multiple components.
Abstract
Description
- This invention relates generally to to a carrier head and, more particularly, to a carrier head and membrane for chemical mechanical polishing apparatus.
- Integrated circuits are typically formed on substrates, particularly silicon wafers, by the sequential deposition of conductive, semiconductive or insulative layers. After each layer is deposited and etched, the outer or uppermost surface of the substrate, i.e. the exposed surface of the substrate, becomes increasingly nonplanar. This nonplanar surface presents problems in the photolithographic steps of the integrated circuit fabrication process. Therefore, there is a need to periodically planarize the substrate surface.
- Chemical mechanical polishing (CMP) is one accepted method of planarization. This method of planarization typically requires that the substrate be mounted on a carrier or polishing head. During polishing, the carrier head brings the exposed surface of the substrate into contact with a rotating polishing pad and provides a controllable load on the substrate to push it against the polishing pad. A typical carrier head includes a flexible membrane with an inner surface that encloses a chamber and an outer surface that provides a substrate mounting surface. By controlling the pressure in the chamber, the load applied to the substrate can be varied.
- Referring to
FIG. 1 a of the drawings, a typical CMP apparatus comprises one ormore carrier heads 10 having aflexible membrane 12 sealed around an inner surface of thecarrier head 10, so as to define a chamber. A gas or fluid inlet/outlet 14 is defined in thecarrier head 10 which is in fluid communication with themembrane 12. A pressure control assembly (not shown) is provided for drawing air from the chamber defined by themembrane 12 or blowing air into the chamber. - In use, a
substrate 16 is loaded into thecarrier head 10 by bringing it into contact with themembrane 12, and then a vacuum is created via theoutlet 14 to hold themembrane 12 and thesubstrate 16 flat against the inner surface of the carrier head. During actual polishing, the vacuum is maintained and thecarrier head 10 lowers thesubstrate 16 into contact with apolishing pad 18, and a slurry acts as the media for chemical mechanical polishing of the substrate (or wafer) 16. Thus the carrier head 10 loads and holds thesubstrate 16 against thepolishing pad 18. It will be appreciated by a person skilled in the art thatFIG. 1 a is a schematic diagram for illustrative purposes and that thepolishing pad 18 usually has a larger diameter than thehead 10. During polishing, thepad 18 is also in contact with the head via a peripheral retaining ring which keeps the wafer from slipping away during polishing. In addition, during polishing, wafer is pressed against the pad by applying pressure to the membrane through theinlet 14. - Referring to
FIG. 1 b of the drawings, during unloading (or de-chucking) of awafer 16 from thecarrier head 10 of a CMP tool, air is blown, via theinlet 14, into the chamber defined by themembrane 12 so as to inflate it. In theory, this process is intended to cause thewafer 16 to become dislodged from themembrane 12. However, in practice, depending on the adhesion between thewafer 16 and themembrane 12, the wafer may bend and there is an increased risk that it may break. This risk is especially aapparent if there are scratches on thewafer 16. - US Patent Application Publication no. 2003 236056 A1 describes an arrangement whereby lateral sprays are used to assist wafer unloading by spraying fluid or gas between the wafer and the membrane. In addition, there are lateral pins or blades (inserted between the wafer and the membrane) that further assist by pulling the wafer down. The disadvantage is that sprays may cause the wafer to be blown in an undesired lateral direction if they are not well balanced on all sides, and blades have an inherent risk of breaking the wafer if the wafer sticks to the membrane.
- It is therefore preferred to provide a carrier head and membrane arrangement in general and for a CMP tool in particular, whereby efficient unloading of a wafer from the carrier head is achieved with reduced risk of breakage relative to prior art arrangements.
- In accordance with the present invention, there is provided a carrier head for a chemical mechanical polishing apparatus, the carrier head comprising a contact surface on which is provided a membrane for receiving a substrate to be polished, said membrane forming a chamber with said contact surface, the carrier head further comprising a main fluid flow passage coupled at one end to said chamber and at an opposite end to means for creating a vacuum between said membrane and said contact surface, said membrane comprising at least one opening from which extends a respective fluid flow channel for selectively applying a vacuum or fluid pressure directly to said substrate, when in use.
- In a preferred embodiment, the respective fluid flow channel that extends from the at least one opening in said membrane comprises an integral tube. In a preferred embodiment, the carrier head comprises a respective guide passage for receiving the or each fluid flow channel. Beneficially the or each fluid flow channel is received within a respective guide passage in slidable engagement, such that movement of the membrane is not restricted during polishing. In a preferred embodiment, the carrier head comprises a plurality of concentric guide passages for receiving a plurality of respective fluid flow channels extending from respective openings in said membrane. Said main fluid flow passage is preferably generally central relative to said contact surface and substrate and said one or more membrane openings and respective fluid flow channels are preferably off-centre relative to said contact surface and substrate.
- The present invention extends to a flexible membrane for use with a carrier head as defined above for forming a chamber with said contact surface, the membrane comprising one or more openings from the or each of which extends a respective fluid flow channel.
- Also in accordance with the present invention there is provided a method of performing chemical mechanical polishing in respect of a substrate, comprising the steps of providing a carrier head as defined above, loading a substrate onto the contact surface said carrier head, against said membraine via main fluid flow passage, performing chemical mechanical polishing in respect of said substrate, and unloading said substrate by applying fluid pressure thereto via said at least one opening and respective fluid flow channel whilst maintaining the application of a vacuum to said membrane via said main fluid flow passage.
- Preferably, during loading of said substrate, a vacuum is additionally applied to said substrate via said at least one opening and respective fluid flow channel.
- The present invention extends to a fluid pressure control system for performing the method defined above in a carrier head as defined above, the fluid pressure control system comprising an outlet coupled to said main fluid flow passage and said one or more fluid flow channels, and being configured to operate in a first loading mode, wherein a vacuum is applied to said main fluid flow passage and said one or more fluid flow channels for loading said substrate onto said carrier head and performing chemical mechanical polishing in respect thereof, and a second, unloading mode, wherein a vacuum is applied to said main fluid flow passage and fluid pressure is applied to said one or more fluid flow channels for unloading said substrate from said carrier head.
- These and other aspects of the present invention will be apparent from, and elucidated with reference to the embodiments described herein.
- Embodiments of the present invention will now be described by way of examples only and with reference to the accompanying drawings, in which:
-
FIG. 1 a is a schematic cross-sectional side view illustrating the principal components of a carrier head of a CMP tool according to the prior art, when a wafer has been loaded; -
FIG. 1 b is a schematic cross-sectional side view of the carrier head ofFIG. 1 a during unloading of the wafer; -
FIG. 2 is a schematic side view illustrating the principal components of a carrier head according to an exemplary embodiment of the present invention; and -
FIG. 3 is a schematic view of a membrane for use with the carrier head ofFIG. 2 ; - Referring to
FIGS. 2 and 3 of the drawings, acarrier head 100 according to an exemplary embodiment of the present invention comprises aninner contact head 102 having a generally central main inlet/outlet 104 for generating the vacuum required to hold thewafer 106 flat against themembrane 108 and the polishing pad (not shown) during polishing, as in the prior art arrangement described with reference toFIG. 1 of the drawings. - However, in this case, referring especially to
FIG. 3 of the drawings, themembrane 108 is formed with a series ofintegral tubes 110, and thecontact head 102 is provided with a corresponding series of slots orpassages 112 for receiving themembrane tubes 110. The main inlet/outlet 104 and themembrane tubes 110 are connected to a fluid pressure control arrangement (not shown). Thus, in the assembled configuration illustrated schematically inFIG. 2 of the drawings, fluid flow through the main inlet/outlet 104 is coupled to themembrane 108, whereas fluid flow through themembrane tubes 110 is coupled directly to thewafer 106. - In use, as before, a
substrate 106 is loaded into thecarrier head 100 by bringing it into contact with themembrane 108, and then a vacuum is created via theoutlet 104 and themembrane tubes 110 to hold themembrane 108 and thesubstrate 106 flat against the inner surface of thecontact head 102. During actual polishing, the vacuum is maintained and thecarrier head 100 lowers thesubstrate 106 into contact with a polishing pad (not shown). Subsequently, gas or fluid pressure is applied through inlet/outlet 104, which applies a pressure between thewafer 106 and the polishing pad, and a slurry acts as the media for chemical mechanical polishing of the substrate (or wafer) 106. Thus the carrier head 100 loads and holds thesubstrate 106 against the polishing pad. When the polishing process has been completed, the vacuum is re-applied through the inlet/outlet 104 so as to enable thecarrier head 100 to lift thesubstrate 106 away from the polishing head. - In this case, however, when it is required to unload (or de-chuck) the
substrate 106 from thecarrier head 100, fluid (e.g. air) pressure is applied by the fluid pressure control arrangement directly to the substrate surface, via themembrane tubes 110, whilst the vacuum continues to be maintained via the main inlet/outlet 104 on themembrane 108. In this manner, the air pressure, applied directly to thewafer 106 overcomes the adhesive forces between thewafer 106 and themembrane 108 and causes thewafer 106 to be released, while the continued vacuum provided via the main inlet/outlet 104 prevents signfiicant inflation of themembrane 108, and therefore prevents signficant bending of thewafer 106. - The
membrane tubes 110 are not affixed to thecorresponding guide passages 112 in thecontact head 102. As such, themembrane tubes 110 are mounted for slidable movement within theguide passages 112 and membrane movement is thus substantially unrestricted during polishing. - It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be capable of designing many alternative embodiments without departing from the scope of the invention as defined by the appended claims. In the claims, any reference signs placed in parentheses shall not be construed as limiting the claims. The word “comprising” and “comprises”, and the like, does not exclude the presence of elements or steps other than those listed in any claim or the specification as a whole. The singular reference of an element does not exclude the plural reference of such elements and vice-versa. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In a device claim enumerating several means, several of these means may be embodied by one and the same item of hardware. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
- Furthermore, the invention may also be embodied with less components than provided in the embodiments described here, wherein one component carries out multiple functions. Just as well may the invention be embodied using more elements than depicted in
FIG. 3 , wherein functions carried out by one component in the embodiment provided are distributed over multiple components. - A person skilled in the art will readily appreciate that various parameters disclosed in the description may be modified and that various embodiments disclosed and/or claimed may be combined without departing from the scope of the invention.
- It is stipulated that the reference signs in the claims do not limit the scope of the claims, but are merely inserted to enhance the legibility of the claims.
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06300423.8 | 2006-05-02 | ||
EP06300423 | 2006-05-02 | ||
PCT/IB2007/051599 WO2007125511A2 (en) | 2006-05-02 | 2007-04-30 | Wafer de-chucking |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090186560A1 true US20090186560A1 (en) | 2009-07-23 |
Family
ID=38655900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/299,302 Abandoned US20090186560A1 (en) | 2006-05-02 | 2007-04-30 | Wafer de-chucking |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090186560A1 (en) |
EP (1) | EP2024136A2 (en) |
JP (1) | JP2009535836A (en) |
CN (1) | CN101484277A (en) |
WO (1) | WO2007125511A2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9254546B2 (en) | 2013-02-19 | 2016-02-09 | Samsung Electronics Co., Ltd. | Chemical mechanical polishing machine and polishing head assembly |
US10593603B2 (en) | 2018-03-16 | 2020-03-17 | Sandisk Technologies Llc | Chemical mechanical polishing apparatus containing hydraulic multi-chamber bladder and method of using thereof |
US11020950B2 (en) | 2013-05-29 | 2021-06-01 | Ev Group E. Thallner Gmbh | Device and method for bonding substrates |
CN113118965A (en) * | 2019-12-31 | 2021-07-16 | 清华大学 | Substrate loading and unloading control method |
US11325223B2 (en) | 2019-08-23 | 2022-05-10 | Applied Materials, Inc. | Carrier head with segmented substrate chuck |
US11548113B2 (en) * | 2008-08-21 | 2023-01-10 | Ebara Corporation | Method and apparatus for polishing a substrate |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009120641A2 (en) * | 2008-03-25 | 2009-10-01 | Applied Materials, Inc. | Improved carrier head membrane |
US10160093B2 (en) | 2008-12-12 | 2018-12-25 | Applied Materials, Inc. | Carrier head membrane roughness to control polishing rate |
KR101575087B1 (en) | 2014-09-02 | 2015-12-07 | 주식회사 케이씨텍 | Membrane assembly in carrier head for chemical mechanical polishing apparatus and carrier head with the same |
CN111251177B (en) * | 2020-03-10 | 2021-11-16 | 北京烁科精微电子装备有限公司 | Bearing head and polishing device with same |
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2007
- 2007-04-30 EP EP07735709A patent/EP2024136A2/en not_active Withdrawn
- 2007-04-30 CN CN200780025154.4A patent/CN101484277A/en active Pending
- 2007-04-30 JP JP2009508596A patent/JP2009535836A/en not_active Withdrawn
- 2007-04-30 WO PCT/IB2007/051599 patent/WO2007125511A2/en active Application Filing
- 2007-04-30 US US12/299,302 patent/US20090186560A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
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WO2007125511A2 (en) | 2007-11-08 |
EP2024136A2 (en) | 2009-02-18 |
WO2007125511A3 (en) | 2008-02-21 |
CN101484277A (en) | 2009-07-15 |
JP2009535836A (en) | 2009-10-01 |
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