US20090314634A1 - Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function and their manufacturing methods - Google Patents
Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function and their manufacturing methods Download PDFInfo
- Publication number
- US20090314634A1 US20090314634A1 US12/551,208 US55120809A US2009314634A1 US 20090314634 A1 US20090314634 A1 US 20090314634A1 US 55120809 A US55120809 A US 55120809A US 2009314634 A1 US2009314634 A1 US 2009314634A1
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- Prior art keywords
- electromagnetic noise
- binding agent
- magnetic material
- ghz
- noise suppressor
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000696 magnetic material Substances 0.000 claims abstract description 93
- 239000011230 binding agent Substances 0.000 claims abstract description 81
- 230000005291 magnetic effect Effects 0.000 claims abstract description 75
- 239000002131 composite material Substances 0.000 claims abstract description 44
- 230000035699 permeability Effects 0.000 claims abstract description 40
- 230000000694 effects Effects 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 238000005289 physical deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 49
- 230000005670 electromagnetic radiation Effects 0.000 description 29
- 229920005989 resin Polymers 0.000 description 28
- 239000011347 resin Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 24
- 238000005240 physical vapour deposition Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 20
- 239000002245 particle Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 239000000843 powder Substances 0.000 description 13
- 229910001337 iron nitride Inorganic materials 0.000 description 12
- 229910000859 α-Fe Inorganic materials 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 11
- 238000001755 magnetron sputter deposition Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000011358 absorbing material Substances 0.000 description 9
- -1 for example Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910003962 NiZn Inorganic materials 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 6
- 239000005060 rubber Substances 0.000 description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000000877 morphologic effect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229920003244 diene elastomer Polymers 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910002518 CoFe2O4 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019819 Cr—Si Inorganic materials 0.000 description 1
- 229910016516 CuFe2O4 Inorganic materials 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 229910002060 Fe-Cr-Al alloy Inorganic materials 0.000 description 1
- 229910017082 Fe-Si Inorganic materials 0.000 description 1
- 229910000705 Fe2N Inorganic materials 0.000 description 1
- 229910017389 Fe3N Inorganic materials 0.000 description 1
- 229910000727 Fe4N Inorganic materials 0.000 description 1
- 229910017133 Fe—Si Inorganic materials 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229910017163 MnFe2O4 Inorganic materials 0.000 description 1
- 229910003264 NiFe2O4 Inorganic materials 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 229910001308 Zinc ferrite Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- DXKGMXNZSJMWAF-UHFFFAOYSA-N copper;oxido(oxo)iron Chemical compound [Cu+2].[O-][Fe]=O.[O-][Fe]=O DXKGMXNZSJMWAF-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- NNGHIEIYUJKFQS-UHFFFAOYSA-L hydroxy(oxo)iron;zinc Chemical compound [Zn].O[Fe]=O.O[Fe]=O NNGHIEIYUJKFQS-UHFFFAOYSA-L 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- NQNBVCBUOCNRFZ-UHFFFAOYSA-N nickel ferrite Chemical compound [Ni]=O.O=[Fe]O[Fe]=O NQNBVCBUOCNRFZ-UHFFFAOYSA-N 0.000 description 1
- CLNYHERYALISIR-UHFFFAOYSA-N nona-1,3-diene Chemical compound CCCCCC=CC=C CLNYHERYALISIR-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002907 paramagnetic material Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000090 poly(aryl ether) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000003340 retarding agent Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
- H01F27/366—Electric or magnetic shields or screens made of ferromagnetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0083—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising electro-conductive non-fibrous particles embedded in an electrically insulating supporting structure, e.g. powder, flakes, whiskers
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- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/009—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising electro-conductive fibres, e.g. metal fibres, carbon fibres, metallised textile fibres, electro-conductive mesh, woven, non-woven mat, fleece, cross-linked
-
- H—ELECTRICITY
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
- H01F1/20—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
- H01F1/28—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder dispersed or suspended in a bonding agent
-
- H—ELECTRICITY
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
- H01F17/06—Fixed inductances of the signal type with magnetic core with core substantially closed in itself, e.g. toroid
- H01F2017/065—Core mounted around conductor to absorb noise, e.g. EMI filter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/08—Magnetic details
- H05K2201/083—Magnetic materials
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/08—Magnetic details
- H05K2201/083—Magnetic materials
- H05K2201/086—Magnetic materials for inductive purposes, e.g. printed inductor with ferrite core
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/269—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
- Y10T428/325—Magnetic layer next to second metal compound-containing layer
Definitions
- the present invention relates to an electromagnetic noise suppressor that suppresses electromagnetic noise, to a structure with an electromagnetic noise suppressing function, and to a method of manufacturing the same.
- Such an apparatus is required to minimize the emission of unnecessary electromagnetic radiation so as not to affect its own operation and that of other apparatuses and so as not to cause adverse effects on the human body, and to operate without malfunctioning when subjected to electromagnetic radiation emitted by other apparatuses.
- Measures to prevent such electromagnetic interference include the use of an electromagnetic radiation shielding material that reflects electromagnetic radiation and the use of an electromagnetic radiation absorbing material.
- electromagnetic radiation shielding material is provided on the surface of the housing of the electronic apparatus or between the electronic apparatuses so as to block electromagnetic radiation (inter-system EMC).
- inter-system EMC electromagnetic radiation shielding material
- electronic components and circuits are covered with electromagnetic radiation shielding material so as to prevent the electronic components and circuits from interfering with each other and resulting in malfunction, and suppressing the processing speed from decreasing and signal waveform from being distorted (intra-system EMC).
- intra-system EMC electromagnetic radiation shielding material
- Electronic apparatuses and electronic components are recently required to have higher performance and become smaller and lighter in weight, and the electromagnetic noise suppressor used in these apparatuses or components is also required to have high electromagnetic noise suppressing effects in a high-frequency band such as a sub-microwave band, be smaller and lighter in weight, and be easy to carry out by the work which takes measures with electromagnetic noise suppressing measures.
- a high-frequency band such as a sub-microwave band
- an electromagnetic noise suppressor including a mixture of two kinds of soft magnetic material powder having different mean particle sizes, namely soft magnetic material powder particles having morphological magnetic anisotropy, that are dispersed in an organic binding agent is disclosed in Japanese Patent Application, First Publication No. Hei 9-35927.
- the electromagnetic noise suppressor is disclosed to have anisotropic magnetic fields of different intensities so as to demonstrate a plurality of magnetic resonances and different values of the imaginary part of complex magnetic permeability ( ⁇ ′′) that correspond to different frequencies are superposed, thus resulting in the distribution of the imaginary part of complex magnetic permeability ( ⁇ ′′) over a wide range of frequencies.
- the imaginary part of complex magnetic permeability ( ⁇ ′′) is a magnetic loss term required for absorbing electromagnetic radiation, and it is said that high electromagnetic noise suppressing effect can be achieved as the imaginary part of complex magnetic permeability ( ⁇ ′′) is distributed over a wide range of frequencies.
- an electromagnetic radiation absorbing material having a composite structure of flake-shaped powder of iron nitride (Fe 16 N 2 ) and a resin is disclosed in Japanese Unexamined Patent Application, First Publication No. 2001-53487.
- NiZn ferrite thin film As another electromagnetic radiation shielding material, a NiZn ferrite thin film is known that can be used to suppress electromagnetic interference (EMI) in the sub-microwave band (Masaki ABE et al., “Application of Thin Ferrite Film and Ultra-Fine Particles formed in Aqueous Solution to Microwave/Nano-Biotechnology”, pp 721-729, No. 6, Vol. 27, 2003; Journal of The Magnetics Society of Japan).
- EMI electromagnetic interference
- NiZn ferrite thin film having the resonance frequency increased to 1.2 GHz. It is also described that the NiZn ferrite thin film is formed by plating on the surface of lead wires or semiconductor devices of a circuit by spin spraying process, and the NiZn ferrite thin film absorbs noise current before electromagnetic noise is generated from the noise current.
- the electromagnetic interference suppressor Japanese Unexamined Patent Application, First Publication No. Hei 9-35927
- ⁇ ′′ imaginary part of complex magnetic permeability
- the values of the imaginary part of complex magnetic permeability ( ⁇ ′′) shown in the ⁇ -f characteristic diagrams are only those for frequencies up to 2 GHz, thus it is impossible to prove sufficient electromagnetic noise suppressing effect over the entire sub-microwave band.
- flake-shaped powder of iron nitride (Fe 16 N 2 ) in quasi stable structure is made by thin film forming process such as vacuum vapor deposition, sputtering, CVD, MBE or the like, although details are not known since no examples are described.
- thin film forming process such as vacuum vapor deposition, sputtering, CVD, MBE or the like.
- iron nitride of stable structure is also included.
- the resonance frequency can be varied up to near 10 GHz by controlling the composition of the resin, heat treatment conditions, shape of the Fe 16 N 2 particles and/or aspect ratio.
- examples are given only for those having resonance frequencies up to about 5 GHz ( FIG. 5 of Japanese Unexamined Patent Application, First Publication No. 2001-53487), and there remain problems in practical application.
- resonance frequency of the NiZn ferrite thin film proposed by ABE et al. is made higher, it is below 2 GHz and is not sufficient for an electromagnetic noise suppressor used in sub-microwave band.
- this publication gives the values of the imaginary part of complex magnetic permeability ( ⁇ ′′) only for frequencies up to 3 GHz in the complex magnetic permeability spectrum ( FIG. 4 ), while the spectrum is about to decrease at 3 GHz, indicating that the resonance frequency cannot increase further.
- the publication also shows the manufacture of a NiZn ferrite thin film by directly plating onto copper wires and semiconductor devices of a circuit, as an example of application. Since the plating solution contains cations of Na, etc. and anions such as chlorine and nitrous acid, it requires careful cleaning when used for semiconductor devices, resulting in increased number of operation processes.
- soft magnetic material powder or flake-shaped powder of iron nitride When soft magnetic material powder or flake-shaped powder of iron nitride is used, it must be used in a large amount in order to achieve sufficient electromagnetic interference suppressing effect and electromagnetic radiation absorbing effect, the amount being usually about 90% by weight of the electromagnetic interference suppressor and electromagnetic radiation absorbing material.
- soft magnetic material powder or flake-shaped powder of iron nitride it is also necessary to increase the thickness of the electromagnetic interference suppressor or the electromagnetic radiation absorbing material in order to achieve sufficient electromagnetic interference suppressing effect and electromagnetic radiation absorbing effect.
- the electromagnetic interference suppressor or the electromagnetic radiation absorbing material has high specific gravity and is thick, and is therefore heavy.
- the electromagnetic interference suppressor or the electromagnetic radiation absorbing material also lacks flexibility and is brittle, since it is constituted mostly from the soft magnetic material powder or the flake-shaped powder of iron nitride, with a small content of binding agent.
- an object of the present invention is to provide an electromagnetic noise suppressor that has sufficient electromagnetic noise suppressing effect over the entire sub-microwave band, a structure such as printed wiring board or semiconductor integrated circuit that is provided with electromagnetic noise suppressing means and a method for easily manufacturing the same.
- Another object of the present invention is to provide an electromagnetic noise suppressor that requires smaller installation space and is lighter in weight, flexible, and has high strength.
- the present inventors considered that the way to achieve high electromagnetic noise suppressing effect in the sub-microwave band is to transform noise current into thermal energy by means of the magnetic loss characteristic of a magnetic material, which means that the material has sufficiently high value of the imaginary part of complex magnetic permeability ( ⁇ ′′) (namely loss term) in this frequency band.
- ⁇ ′′ complex magnetic permeability
- the electromagnetic noise suppressor of the present invention is characterized in that the magnetic resonance frequency is 8 GHz or higher, and the imaginary part of complex magnetic permeability ( ⁇ ′′ H ) at 8 GHz is higher than the imaginary part of complex magnetic permeability ( ⁇ ′′ L ) at 5 GHz.
- Such an electromagnetic noise suppressor can demonstrate sufficient electromagnetic noise suppressing effect over the entire sub-microwave band.
- the electromagnetic noise suppressor of the present invention preferably has a composite layer formed by integrating the binding agent and the magnetic material.
- Such an electromagnetic noise suppressor can have magnetic resonance frequency of 8 GHz or higher, and make the imaginary part of complex magnetic permeability ⁇ ′′ H at 8 GHz higher than the imaginary part of complex magnetic permeability ⁇ ′′ L at 5 GHz, and enables it to reduce the space requirement and weight.
- the composite layer is a layer formed by physically vapor-depositing the magnetic material onto the binding agent
- the composite layer has such a constitution as the magnetic material is dispersed in the binding agent so that the magnetic material and the binding agent are integrated with each other so as to provide high electromagnetic noise suppressing effect.
- the composite layer does not contain impurity ions so that there is no possibility of damage to the electronic circuit by the impurity ions.
- the electromagnetic noise suppressor can be made flexible and have high strength.
- the magnetic material can be dispersed more uniformly in the binding agent that has not yet cured. After the binding agent has cured, the magnetic material does not crystallize into fine particles, and such a composite layer can be obtained as the binding agent and the magnetic material are integrated at the atomic level.
- a method of manufacturing an electromagnetic noise suppressor of the present invention includes a vapor deposition process of physically vapor-depositing a magnetic material onto a binding agent to form a composite layer on the surface of the binding agent. Such a manufacturing method enables it to easily manufacture the electromagnetic noise suppressor of the present invention that has the composite layer constituted from the binding agent and the magnetic material integrated together.
- a structure with an electromagnetic noise suppressing function of the present invention is a structure with at least a part of the surface thereof covered by the electromagnetic noise suppressor of the present invention.
- the structure with an electromagnetic noise suppressing function enables it to dispose the electromagnetic noise suppressor in a small space near a noise source and efficiently suppress electromagnetic noise in a sub-microwave band.
- a method of manufacturing a structure with an electromagnetic noise suppressing function of the present invention includes a coating process of coating at least a part of the surface of the structure with a binding agent, and a vapor deposition process of physically vapor-depositing a magnetic material onto the binding agent to form a composite layer on the surface of the binding agent.
- Such a manufacturing method enables it to easily manufacture the structure with an electromagnetic noise suppressing function that can efficiently suppress electromagnetic noise in a sub-microwave band.
- FIG. 1 shows an image of a composite layer of an electromagnetic noise suppressor of the present invention observed with a high-resolution transmission electron microscope.
- FIG. 2 is a schematic diagram showing the vicinity of the composite layer in an example.
- FIG. 3 is a perspective view of a camera module that is an example of structure with an electromagnetic noise suppressing function of the present invention.
- FIG. 4 is a sectional view of a camera module that is an example of structure with an electromagnetic noise suppressing function of the present invention.
- FIG. 5 is a sectional view of a printed wiring board having electronic components mounted thereon that is an example of the structure with an electromagnetic noise suppressing function of the present invention.
- FIG. 6 is a graph showing the complex magnetic permeability versus frequency in electromagnetic noise suppressor of Example 1.
- FIG. 7 is a graph showing the complex magnetic permeability versus frequency in electromagnetic noise suppressor of Example 2.
- the electromagnetic noise suppressor of the present invention has magnetic resonance frequency of 8 GHz or higher, and the imaginary part of complex magnetic permeability ( ⁇ ′′ H ) at 8 GHz being higher than the imaginary part of complex magnetic permeability ( ⁇ ′′ L ) at 5 GHz.
- ⁇ ′ is the real part of the complex magnetic permeability
- ⁇ ′′ is the imaginary part of the complex magnetic permeability, that represents the magnetic loss related to the absorption of electromagnetic radiation.
- the magnetic resonance frequency is a frequency at which the value of the real part ⁇ ′ of the complex magnetic permeability becomes one-half of the peak value, and the frequency is higher than the peak frequency.
- the magnetic resonance frequency is regarded as the upper limit of frequencies at which noise current can be transformed into thermal energy by means of the magnetic loss characteristic of the magnetic material.
- the magnetic resonance frequency be 8 GHz or higher, and that the imaginary part ⁇ ′′ H of complex magnetic permeability at 8 GHz be higher than the imaginary part ⁇ ′′ L of complex magnetic permeability at 5 GHz, that is, the imaginary part ⁇ ′′ of complex magnetic permeability increases monotonically with the frequency.
- the magnetic resonance frequency of the electromagnetic noise suppressor of the present invention is preferably 10 GHz or higher.
- the magnetic resonance frequency of the electromagnetic noise suppressor of the present invention having a magnetic resonance frequency of 8 GHz or higher, and the imaginary part ⁇ ′′ H of complex magnetic permeability at 8 GHz being higher than the imaginary part ⁇ ′′ L of complex magnetic permeability at 5 GHz can be made by forming the composite layer consisting of the magnetic material and part of the binding agent being integrated with each other at the nanometer scale.
- the composite layer is a layer formed by physical vapor deposition of the magnetic material on the binding agent, where the magnetic material applied by physical vapor deposition is dispersed in the binding agent and integrated therewith in the atomic state, without forming a homogeneous film.
- the electromagnetic noise suppressor 1 is constituted only from the composite layer 3 consisting of atoms of the magnetic material mixed with molecules of the binding agent 2 , and a layer consisting only of the binding agent 2 .
- the composite layer 3 consists of a portion where crystal lattice 4 is observed to be made up of atoms of the magnetic material disposed at spacing of several angstroms forming a very small crystal, a portion where only the binding agent 2 is observed without presence of the magnetic material in a very small region, and a portion where atoms of the magnetic material 5 are observed to be dispersed in the binding agent without crystallizing.
- the magnetic material does not form fine particles having crystalline structure with clear grain boundary, but forms a complicated heterogeneous structure (a structure that is not homogeneous nor uniform) where the binding agent and the magnetic material are integrated at the nanometer scale.
- the thickness of the composite layer is the depth of infiltration of the atoms of the magnetic material into the surface layer of the binding agent, that is dependent on such factors as the weight of the magnetic material deposited, kind of the binding agent and the conditions of physical vapor deposition, and is roughly in a range from 1.5 to 3 times the thickness of the magnetic material layer formed by the vapor deposition.
- the thickness of the composite layer is set to be not less than 0.005 ⁇ m, atoms of the magnetic material and the binding agent can be integrated in a dispersed state, giving rise to a high loss characteristic in high frequency region due to the morphological anisotropy, thus achieving sufficient electromagnetic noise suppressing effect.
- thickness of the composite layer is preferably 1 ⁇ m or less, more preferably 0.3 ⁇ m or less.
- binding agent examples include, but are not limited to, organic materials, for example, resins such as polyolefine resin, polyamide resin, polyester resin, polyether resin, polyketone resin, polyimide resin, polyurethane resin, polysiloxane resin, phenol resin, epoxy resin, acrylic resin and polyacrylate resin; diene rubbers such as natural rubber, isoprene rubber, butadiene rubber and styrene butadiene rubber; non-diene rubbers such as butyl rubber, ethylene propylene rubber, urethane rubber and silicone rubber.
- the binding agent may also be of thermoplastic or thermosetting nature, or a material that has not yet been cured.
- the resin or rubber described above that is modified, mixed or copolymerized may also be used.
- the binding agent may also be an inorganic material that has a low elastic modulus in shear that will be described later, such as an aero gel or foamed silica that has high void ratio and such a level of hardness that can capture ultra-fine particles. It may also be used in the form of a composite material with the organic material described above.
- the binding agent preferably has a low elastic modulus in shear in view of the ease of atoms of the magnetic material to infiltrate into the binding agent during the physical vapor deposition of the magnetic material.
- the elastic modulus in shear is preferably 5 ⁇ 10 7 Pa or less.
- a desirable value of elastic modulus in shear may be obtained by heating the binding agent to a temperature of 100 to 300° C., although the temperature must be controlled so as not to decompose or vaporize the material.
- the binding agent is preferably an elastic material having hardness of about 80° (JIS-A).
- the binding agent have high elastic modulus in shear after being subjected to physical vapor deposition of the magnetic material, in order to maintain the heterogeneous structure described previously.
- the elastic modulus in shear is preferably in a range from 1 ⁇ 10 7 Pa or higher in a temperature range in which the electromagnetic noise suppressor is used. It is preferable to crosslink the binding agent after physical vapor deposition of the magnetic material, in order to obtain the desired value of elastic modulus in shear.
- the binding agent is preferably a thermosetting resin or a resin that is cured when exposed to an energy beam (ultraviolet light, electron beam) which allows the elastic modulus to be low during vapor deposition and to be increased by crosslinking after the vapor deposition.
- an energy beam ultraviolet light, electron beam
- the binding agent may also include silane coupling agent, titanate coupling agent, nonionic surfactant, polar resin oligomer or the like, so that part of the magnetic material that has been turned into plasma or been ionized can react with the binding agent and be stabilized. Adding such an additive enables it to not only prevent oxidization but also prevent a homogeneous film from being formed by the aggregation of atoms so as to prevent the reflection of electromagnetic radiation by the homogeneous film, thereby improving the absorbing property.
- the binding agent may also contain reinforcement fillers, flame retarding agents, anti-aging agents, anti-oxidizing agents, colorants, thixotropy enhancing agents, plasticizers, lubricants and heat resistance enhancing agents. Care should be exercised, however, since adding a hard material leads to collision with the atoms of the magnetic material, thus resulting in insufficient dispersion. Weatherability may also be improved by coating with silicon oxide or silicon nitride by vapor deposition, after the vapor deposition of the magnetic material.
- the electromagnetic noise suppressor of the present invention may have either a planar configuration such as sheet or a three-dimensional structure.
- the shape may also be adapted to the shape of a structure to be made as the product, when it is used to cover the surface of the structure as will be described later.
- the electromagnetic noise suppressor of the present invention can be made by forming the composite layer on the surface of the binding agent by physical vapor deposition of the magnetic material onto the binding agent.
- Vaporization processes include EB vapor deposition and ion plating, and sputtering processes include high frequency sputtering, magnetron sputtering and opposing target type magnetron sputtering process.
- An oxide film may be formed by introducing a reactive gas such as oxygen.
- the target material to be vaporized
- growth rate is higher since strong plasma is generated by the effect of magnetic field and a high energy of several tens of electron volts (eV) is given to the particle.
- eV electron volts
- an insulating target may be used.
- the opposing target type magnetron sputtering process is a process where plasma is generated between opposing targets and is confined by the magnetic field, while the substrate is placed outside of the opposing targets so as to form a desired thin film without causing damage from the plasma. Therefore, a film of the same composition as that of the target that is made of a dense material can be formed without need to sputter the thin film of the substrate again and mitigating the collision of the sputtered atoms with further higher growth rate.
- covalent bonding energy of the resin is about 4 eV.
- Bonding energies of C—C, C—H, Si—O and Si—C, for example, are 3.6 eV, 4.3 eV, 4.6 eV and 3.3 eV, respectively.
- the vaporized particles In the ion plating, magnetron sputtering, or opposing target type magnetron sputtering process, in contrast, the vaporized particles have high energies and therefore may collide with the binding agent and break part of the chemical bonding of the resin.
- the magnetic material with a particle energy of 5 eV or higher it is preferable to deposit the magnetic material with a particle energy of 5 eV or higher to the binding agent by physical vapor deposition, since it enables it to disperse a large amount of the magnetic material in the binding agent at the same time. Since a large amount of the magnetic material can be processed in a single deposition run, the electromagnetic noise suppressor having high electromagnetic noise suppressing effect can be easily made. Since velocity of the binding agent in vibration thereof is lower than the velocity of the particle, rate of vapor deposition is preferably set to be low in accordance to the timing of relaxation of the binding agent, about 60 nm/min or less depending on the kind of magnetic material.
- a metal-based soft magnetic material As the magnetic material to be vaporized in the vapor deposition process, a metal-based soft magnetic material, an oxide-based soft magnetic material and/or a nitride-based soft magnetic material is mainly used. Any one of these materials or a mixture of two or more of these materials may be used.
- iron or an iron alloy is commonly employed.
- iron alloy Fe—Ni, Fe—Co, Fe—Cr, Fe—Si, Fe—Al, Fe—Cr—Si, Fe—Cr—Al, Fe—Al—Si or Fe—Pt alloy may be used. Any one of these materials or a mixture of two or more of these materials may be used. Either one of these metal-based soft magnetic materials or a mixture of two or more of these materials may be used.
- cobalt, nickel or an alloy thereof may also be used. Nickel has resistance against oxidation and is therefore preferably used independently.
- ferrite is preferably used as the oxide-based soft magnetic material.
- These variations of ferrite may be used either independently or in a combination of two more kinds thereof.
- nitride-based soft magnetic material Fe 2 N, Fe 3 N, Fe 4 N, Fe 16 N 2 , etc., are known. These nitride-based soft magnetic materials have high magnetic permeability and high corrosion resistance, and are therefore preferably used.
- the composition of the magnetic material dispersed in the binding agent is not necessarily the same as that of the magnetic material before being vaporized.
- the magnetic material may have reacted with part of the binding agent and changed into paramagnetic material or antiferromagnetic material.
- the amount of the magnetic material deposited on the binding agent in a single deposition run is preferably 200 nm or less in terms of thickness of the magnetic material layer.
- the amount of the magnetic material to be deposited is preferably 100 nm or less, and more preferably 50 nm or less.
- the amount of the magnetic material to be deposited is preferably 0.5 nm or less.
- the total amount of the magnetic material can be increased by stacking a plurality of composite layers.
- the total amount of deposition is preferably in a range from 10 to 500 nm in terms of total thickness of the magnetic material, while it depends on the required level of electromagnetic noise suppression.
- Part of the layers to be stacked may also be formed as bulk metal layers that have continuity, so as to have reflectivity to electromagnetic radiation.
- the layers may also be formed in composite structure with the dielectric material layer so as to control the electromagnetic noise suppressing effect.
- the thickness of the binding agent used in the vapor deposition process is preferably as small as possible in order to make a compact electromagnetic noise suppressor. Specifically, the thickness is preferably 50 ⁇ m or less and more preferably 10 ⁇ m or less.
- the structure with an electromagnetic noise suppressing function of the present invention is a structure with at least a part of the surface thereof covered by the electromagnetic noise suppressor of the present invention.
- the structure may be, for example, a printed wiring board having electronic components mounted thereon, a semiconductor integrated circuit or the like.
- FIG. 3 and FIG. 4 show a camera module as an example of the structure with an electromagnetic noise suppressing function.
- the camera module includes a printed wiring board 12 that has an image sensor 11 mounted on the surface thereof, a lens 13 that corresponds to the image sensor 11 , a camera holder 14 that holds the lens 13 and encloses the image sensor 11 on the printed wiring board 12 , an outer case 15 that fits on the outside of the camera holder 14 , and the electromagnetic noise suppressor 1 that covers the surface of the outer case 15 .
- Covering of the outer case 15 with the electromagnetic noise suppressor 1 is carried out, for example, as follows.
- the outer case 15 that is a structure formed from a resin by injection molding is dipped in epoxy resin solution that is a binding agent so as to cover the surface with epoxy resin of B stage having a thickness of 15 ⁇ m.
- a composite layer is formed on the epoxy resin by physical vapor deposition to equivalent thickness of 45 nm.
- the outer case 15 that is provided with the electromagnetic noise suppressing function is fitted onto the camera holder 14 , thereby shielding the camera module from noise.
- FIG. 5 shows a printed wiring board as another example of the structure with an electromagnetic noise suppressing function.
- the printed wiring board includes a circuit 22 formed on a substrate 21 , a semiconductor package 23 and a chip component 24 that are connected to the circuit 22 , and the electromagnetic noise suppressor 1 that covers the surface of the printed wiring board together with the circuit 22 , the semiconductor package 23 and the chip component 24 .
- Covering of the printed wiring board with the electromagnetic noise suppressor 1 is carried out, for example, as follows.
- An insulating binding agent is applied to the printed wiring board to a thickness of about 50 ⁇ m so as to cover the circuit 22 , the semiconductor package 23 and the chip component 24 .
- the magnetic material is deposited onto the binding agent by physical vapor deposition so as to form the composite layer. This process is not a wet process and does not require washing operation to remove ions, and is capable of easily rendering the electromagnetic noise suppressing function.
- the magnetic material is deposited to a thickness of about 10 to 50 nm by physical vapor deposition to form a composite layer on an organic insulating film having a thickness from 200 nm to 100 ⁇ m that is formed from polyimide, polyparaxylene, polytetrafluoroethylene, polyaryl ether, polyxylylene, polyadamantane ether, polybenzo oxazole or benzocyclobutene resin that has been formed on a semiconductor wafer by spin coating process or CVD (chemical vapor deposition).
- the composite layer may also be formed partially by using a mask as required.
- the electromagnetic noise suppressor having heterogeneous structure of nanometer scale is provided in the vicinity of microscopic semiconductor circuit, it is made possible to suppress the resonance of a digital circuit during pulse transmission and suppress radiation noise from being generated by impedance mismatch, thereby to improving the transmission characteristics such as transmission speed, even with a small amount of magnetic material.
- the electromagnetic noise suppressor of the present invention described above has a high resonance frequency of 8 GHz or higher, supposedly because the composite layer is formed where the magnetic material and the binding agent are integrated by physical vapor deposition so that even a small amount of the magnetic material can achieve the quantum effect originating from the heterogeneous structure of nanometer scale, magnetic anisotropy of the material, morphological magnetic anisotropy or anisotropy due to external magnetic field, although theoretical explanation has not been presented. It is considered that such a feature enables achievement of satisfactory magnetic characteristics and electromagnetic noise suppressing effects over the entire sub-microwave band with even a small amount of the magnetic material.
- the electromagnetic noise suppressor of the present invention can achieve the electromagnetic noise suppressing effect even with a small amount of the magnetic material, the amount of the magnetic material can be reduced significantly, resulting in weight reduction.
- the electromagnetic noise suppressor of the present invention can achieve sufficient electromagnetic noise suppressing effect even with the composite layer having a thickness as small as 0.3 ⁇ m or less, the electromagnetic noise suppressor can be formed with a small thickness, so as to decrease the space requirement.
- the magnetic material is dispersed in the state of atoms into the binding agent so that the magnetic material and the binding agent are integrated to form the composite layer having high electromagnetic noise suppressing effect with a small amount of the magnetic material.
- the composite layer does not include impurity ions so that there is no possibility of damage to the electronic circuit by the impurity ions.
- the amount of the magnetic material can be reduced significantly, decrease in flexibility and in strength of the resin or rubber due to the magnetic material can be minimized in the case in which the binding agent is resin or rubber.
- the binding agent is a curable resin
- the magnetic material is distributed uniformly in the binding agent prior to curing and, after being cured, the magnetic material can be suppressed from crystallizing into fine particles even when the electromagnetic noise suppressor is used at a high temperature, thus improving the weatherability.
- the structure with an electromagnetic noise suppressing function of the present invention (for example, printed wiring board or semiconductor integrated circuit) enables it to dispose the noise suppressor with small space requirement in the vicinity of the noise source and efficiently suppress electromagnetic noise in the sub-microwave band.
- Electromagnetic radiation absorbing characteristic Transmission noise suppressing effect was evaluated by S parameter method using test fixture TF-3A, TF-18A for micro strip line having impedance of 50 ⁇ manufactured by KEYCOM Corporation.
- Coupling coefficient in near field was evaluated using micro loop antenna type fixture manufactured by KEYCOM Corporation.
- Vector network analyzer 37247C manufactured by Anritsu Company was used.
- a silicone rubber that had been vulcanized having a thickness of 15 ⁇ m (elastic modulus in shear of 1 ⁇ 10 7 Pa at normal temperature containing wet silica) was provided as the binding agent on a polyethylene phthalate film used as the support layer having a thickness of 12 ⁇ m (elastic modulus in shear of 3.8 ⁇ 10 9 Pa at the normal temperature), and thereon a composite layer was formed by sputtering Fe—Ni-based soft magnetic metal to an equivalent thickness of 20 nm by physical vapor deposition of the opposing target type magnetron sputtering process, thereby to obtain the electromagnetic noise suppressor. Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature.
- FIG. 1 Magnetic permeability was measured with a magnetic permeability measuring instrument. As shown in FIG. 6 , relative intensity of ⁇ ′′ L was 250 and relative intensity of ⁇ ′′ H was about seven times the value described above. The magnetic resonance frequency (the frequency at which the value of ⁇ ′ becomes one-half of the peak value, and which is higher than the peak frequency) exceeded 9 GHz, the measurement limit of the instrument.
- the measurement of the electromagnetic radiation absorbing characteristics showed that reflection attenuation was ⁇ 9.5 dB and transmission attenuation was ⁇ 5.5 dB at 1 GHz, while reflection attenuation was ⁇ 14 dB and transmission attenuation was ⁇ 20 dB at 10 GHz.
- An epoxy resin of B stage having a thickness of 25 ⁇ m (elastic modulus in shear of 8 ⁇ 10 6 Pa before curing and elastic modulus in shear of 2 ⁇ 10 9 after curing) was provided as the binding agent on a polyethylene terephthalate film that had been subjected to mold-release treatment and used as the support layer having a thickness of 12 ⁇ m, and thereon a composite layer was formed by depositing Fe—Ni-based soft magnetic metal to an equivalent thickness of 10 nm by physical vapor deposition of the opposing target type magnetron sputtering process. Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature.
- the epoxy sheet was removed from the polyethylene phthalate film and was cut into halves, and the epoxy sheet were placed on the other so that the composite layers were stacked alternately.
- the stack was heated to 40° C. for 6 hours then 120° C. for 2 hours so as to harden the epoxy resin, thereby to obtain the electromagnetic noise suppressor.
- relative intensity of ⁇ ′′ L was 200 and relative intensity of ⁇ ′′ H was about five times the value described above.
- the magnetic resonance frequency (the frequency at which the value of ⁇ ′ becomes one-half of the peak value, and which is higher than the peak frequency) exceeded 9 GHz, the measurement limit of the instrument.
- the measurement of the electromagnetic radiation absorbing characteristics showed that internal coupling coefficient was ⁇ 8 dB and mutual coupling coefficient was ⁇ 7 dB at 3 GHz.
- Metal Ni was deposited to a thickness of 30 nm on one side of a polyimide film used as the support layer having a thickness of 12 ⁇ m, and provided on the other side was vulcanized electrically conductive silicone rubber having a thickness of 7 ⁇ m (elastic modulus in shear of 2 ⁇ 10 7 Pa at the normal temperature with 15% by weight of carbon black included) as the binding agent. Then composite layers were formed on the top and bottom surfaces by depositing a Fe—Ni-based soft magnetic metal to equivalent thickness of 20 nm by physical vapor deposition of opposing target type magnetron sputtering process, thereby to obtain an electromagnetic noise suppressor.
- Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature.
- Relative intensity of ⁇ ′′ L of the imaginary part of the complex magnetic permeability was 180 and relative intensity of ⁇ ′′ H was about six times the value described above.
- the magnetic resonance frequency (the frequency at which the value of ⁇ ′ becomes one-half of the peak value, and which is higher than the peak frequency) exceeded 9 GHz, the measurement limit of the instrument.
- the measurement of the electromagnetic radiation absorbing characteristics showed that internal coupling coefficient was ⁇ 3 dB and mutual coupling coefficient was ⁇ 4 dB at 1 GHz.
- An epoxy resin of B stage containing NBR (elastic modulus in shear of 8 ⁇ 10 6 Pa before curing and elastic modulus in shear of 8 ⁇ 10 8 Pa after curing) was provided as the binding agent on a metallic conductor formed on a polyimide film with wiring pitch of 0.3 mm, and thereon a composite layer was formed by depositing Fe—Ni-based soft magnetic metal to an equivalent thickness of 15 nm by physical vapor deposition of the opposing target type magnetron sputtering process. Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature. The sample was heated to 40° C. for 6 hours then 120° C. for 2 hours so as to harden the epoxy resin, thereby to obtain a printed wiring board having the electromagnetic noise suppressor provided thereon.
- the wiring board, an LCD (controller LSI is provided on glass) and a CPU of a mobile telephone were connected with each other. Display of moving picture was compared with one that was not provided with the electromagnetic noise suppressor, and the Example showed a display that was not influenced by crosstalk without faulty signal compared to that without the electromagnetic noise suppressor.
- the electromagnetic noise suppressor of the present invention can be used to cover electronics apparatus and electronic components, and enables the manufacture of electronic apparatuses and electronic components that are smaller and lighter in weight while achieving sufficient electromagnetic noise suppressing effect over entire the sub-microwave band.
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Abstract
An electromagnetic noise suppressor of the present invention has magnetic resonance frequency of 8 GHz or higher, and the imaginary part of complex magnetic permeability at 8 GHz is higher than the imaginary part of complex magnetic permeability at 5 GHz. Such an electromagnetic noise suppressor is capable of achieving sufficient electromagnetic noise suppressing effect over the entire sub-microwave band. The electromagnetic noise suppressor can be manufactured by forming a composite layer on the surface of a binding agent through physical deposition of a magnetic material on the binding agent. The structure with an electromagnetic noise suppressing function of the present invention is a printed wiring board, a semiconductor integrated circuit or the like that is covered with the electromagnetic noise suppressor on at least a part of the surface of the structure.
Description
- The present application is a divisional of U.S. patent application Ser. No. 10/538,132, filed Jun. 9, 2005, which is a U.S.C. §371 National Phase conversion of PCT/JP2004/002104, filed Feb. 24, 2004, the entire contents of which are hereby incorporated by reference.
- The present invention relates to an electromagnetic noise suppressor that suppresses electromagnetic noise, to a structure with an electromagnetic noise suppressing function, and to a method of manufacturing the same.
- In recent years, as the use of the Internet has increased, electronic apparatuses that use CPUs running at high clock frequencies in a sub-microwave band (0.3 to 10 GHz), electronic apparatuses that use high frequency bus, and telecommunication apparatuses that utilize radio waves have been increasing, such as personal computers, home appliances having information processing functions, wireless LAN, bluetooth-equipped apparatuses, optical module, mobile telephones, mobile information terminals and intelligent road traffic information system. This trend leads to a society of ubiquitous computing that requires devices of higher performance with high-speed digital information processing function and low-voltage driving. However, as such apparatuses become popular, concerns have been increasing on the problems related to the electromagnetic interference such as malfunctioning of an apparatus that emits electromagnetic radiation or other apparatuses and health threats to humans. For this reason, such an apparatus is required to minimize the emission of unnecessary electromagnetic radiation so as not to affect its own operation and that of other apparatuses and so as not to cause adverse effects on the human body, and to operate without malfunctioning when subjected to electromagnetic radiation emitted by other apparatuses. Measures to prevent such electromagnetic interference include the use of an electromagnetic radiation shielding material that reflects electromagnetic radiation and the use of an electromagnetic radiation absorbing material.
- As a means for preventing electromagnetic interference between electronic apparatuses, electromagnetic radiation shielding material is provided on the surface of the housing of the electronic apparatus or between the electronic apparatuses so as to block electromagnetic radiation (inter-system EMC). As a means for preventing electromagnetic interference within an electronic apparatus, electronic components and circuits are covered with electromagnetic radiation shielding material so as to prevent the electronic components and circuits from interfering with each other and resulting in malfunction, and suppressing the processing speed from decreasing and signal waveform from being distorted (intra-system EMC). Particularly in near-field environments such as within an electronic apparatus, it has been required to suppress the generation of electromagnetic noise by providing electromagnetic noise suppressing measures to electronic components that are the sources of the electromagnetic noise or to suppress the interference between signals thereby to improve the transmission characteristic (micro EMC).
- Electronic apparatuses and electronic components are recently required to have higher performance and become smaller and lighter in weight, and the electromagnetic noise suppressor used in these apparatuses or components is also required to have high electromagnetic noise suppressing effects in a high-frequency band such as a sub-microwave band, be smaller and lighter in weight, and be easy to carry out by the work which takes measures with electromagnetic noise suppressing measures.
- As the electromagnetic radiation shielding material, for example, an electromagnetic noise suppressor including a mixture of two kinds of soft magnetic material powder having different mean particle sizes, namely soft magnetic material powder particles having morphological magnetic anisotropy, that are dispersed in an organic binding agent is disclosed in Japanese Patent Application, First Publication No. Hei 9-35927.
- In the publication described above, the electromagnetic noise suppressor is disclosed to have anisotropic magnetic fields of different intensities so as to demonstrate a plurality of magnetic resonances and different values of the imaginary part of complex magnetic permeability (μ″) that correspond to different frequencies are superposed, thus resulting in the distribution of the imaginary part of complex magnetic permeability (μ″) over a wide range of frequencies. The imaginary part of complex magnetic permeability (μ″) is a magnetic loss term required for absorbing electromagnetic radiation, and it is said that high electromagnetic noise suppressing effect can be achieved as the imaginary part of complex magnetic permeability (μ″) is distributed over a wide range of frequencies.
- As another electromagnetic radiation shielding material, an electromagnetic radiation absorbing material having a composite structure of flake-shaped powder of iron nitride (Fe16N2) and a resin is disclosed in Japanese Unexamined Patent Application, First Publication No. 2001-53487.
- In the publication described above, it is described that, when the magnetic material has a high value of saturation magnetization Is, value of fr(μ′−1) that represents the limit of magnetic permeability increases, thus limitation line shifts toward higher frequency, so that higher magnetic permeability is achieved at high frequencies. As a result, it is claimed, that the use of iron nitride that has the highest saturation magnetization among various magnetic materials enables it to achieve higher magnetic permeability at higher frequencies with the resonance frequency fr reaching about 5 GHz. It is also described that the resonance frequency can be freely varied in a range from several hundreds of MHz to near 10 GHz by controlling the composition of the resin, heat treatment conditions, shape of the iron nitride particles and/or aspect ratio. An example of application is shown where ICs mounted on a wiring board are covered, together with the leads thereof, with an electromagnetic absorbing material in the state of a paste.
- As another electromagnetic radiation shielding material, a NiZn ferrite thin film is known that can be used to suppress electromagnetic interference (EMI) in the sub-microwave band (Masaki ABE et al., “Application of Thin Ferrite Film and Ultra-Fine Particles formed in Aqueous Solution to Microwave/Nano-Biotechnology”, pp 721-729, No. 6, Vol. 27, 2003; Journal of The Magnetics Society of Japan).
- This publication describes a NiZn ferrite thin film having the resonance frequency increased to 1.2 GHz. It is also described that the NiZn ferrite thin film is formed by plating on the surface of lead wires or semiconductor devices of a circuit by spin spraying process, and the NiZn ferrite thin film absorbs noise current before electromagnetic noise is generated from the noise current.
- However, the electromagnetic interference suppressor (Japanese Unexamined Patent Application, First Publication No. Hei 9-35927) that is claimed to have imaginary part of complex magnetic permeability (μ″) distributed over a broad range of frequencies is made by simply increasing the imaginary part of complex magnetic permeability (μ″) partially, as indicated by the μ-f characteristic diagrams of
FIG. 2 andFIG. 3 of this publication, and has magnetic resonance frequency lower than 2 GHz. Also the values of the imaginary part of complex magnetic permeability (μ″) shown in the μ-f characteristic diagrams are only those for frequencies up to 2 GHz, thus it is impossible to prove sufficient electromagnetic noise suppressing effect over the entire sub-microwave band. - With regards to the electromagnetic radiation absorbing material having composite structure of flake-shaped powder of iron nitride and a resin disclosed in Japanese Unexamined Patent Application, First Publication No. 2001-53487, it is described that flake-shaped powder of iron nitride (Fe16N2) in quasi stable structure is made by thin film forming process such as vacuum vapor deposition, sputtering, CVD, MBE or the like, although details are not known since no examples are described. However, it is difficult to stabilize the crystal structure of iron nitride (Fe16N2), and iron nitride of stable structure is also included. Thus it is difficult to make flake-shaped powder of iron nitride (Fe16N2) that has sufficiently high saturation magnetization. It is also very difficult and impractical to make flake-shaped or disk-shaped fine powder of iron nitride (Fe16N2) by using a mask. It is described that the resonance frequency can be varied up to near 10 GHz by controlling the composition of the resin, heat treatment conditions, shape of the Fe16N2 particles and/or aspect ratio. However, examples are given only for those having resonance frequencies up to about 5 GHz (
FIG. 5 of Japanese Unexamined Patent Application, First Publication No. 2001-53487), and there remain problems in practical application. - Although resonance frequency of the NiZn ferrite thin film proposed by ABE et al. is made higher, it is below 2 GHz and is not sufficient for an electromagnetic noise suppressor used in sub-microwave band. Also, this publication gives the values of the imaginary part of complex magnetic permeability (μ″) only for frequencies up to 3 GHz in the complex magnetic permeability spectrum (
FIG. 4 ), while the spectrum is about to decrease at 3 GHz, indicating that the resonance frequency cannot increase further. The publication also shows the manufacture of a NiZn ferrite thin film by directly plating onto copper wires and semiconductor devices of a circuit, as an example of application. Since the plating solution contains cations of Na, etc. and anions such as chlorine and nitrous acid, it requires careful cleaning when used for semiconductor devices, resulting in increased number of operation processes. - When soft magnetic material powder or flake-shaped powder of iron nitride is used, it must be used in a large amount in order to achieve sufficient electromagnetic interference suppressing effect and electromagnetic radiation absorbing effect, the amount being usually about 90% by weight of the electromagnetic interference suppressor and electromagnetic radiation absorbing material. When soft magnetic material powder or flake-shaped powder of iron nitride is used, it is also necessary to increase the thickness of the electromagnetic interference suppressor or the electromagnetic radiation absorbing material in order to achieve sufficient electromagnetic interference suppressing effect and electromagnetic radiation absorbing effect. Thus, there has been a problem in that the electromagnetic interference suppressor or the electromagnetic radiation absorbing material has high specific gravity and is thick, and is therefore heavy.
- There has also been a problem in that the electromagnetic interference suppressor or the electromagnetic radiation absorbing material is thick and makes it difficult to reduce the space requirement.
- The electromagnetic interference suppressor or the electromagnetic radiation absorbing material also lacks flexibility and is brittle, since it is constituted mostly from the soft magnetic material powder or the flake-shaped powder of iron nitride, with a small content of binding agent.
- With the background described above, an object of the present invention is to provide an electromagnetic noise suppressor that has sufficient electromagnetic noise suppressing effect over the entire sub-microwave band, a structure such as printed wiring board or semiconductor integrated circuit that is provided with electromagnetic noise suppressing means and a method for easily manufacturing the same.
- Another object of the present invention is to provide an electromagnetic noise suppressor that requires smaller installation space and is lighter in weight, flexible, and has high strength.
- The present inventors considered that the way to achieve high electromagnetic noise suppressing effect in the sub-microwave band is to transform noise current into thermal energy by means of the magnetic loss characteristic of a magnetic material, which means that the material has sufficiently high value of the imaginary part of complex magnetic permeability (μ″) (namely loss term) in this frequency band. After studying the integration of the binding agent and the magnetic material dispersed in the former in the atomic state so as to make use of the effect of magnetic anisotropy such as morphological anisotropy, the inventors developed an electromagnetic noise suppressor of high magnetic resonance frequency that can be used in the sub-microwave band.
- The electromagnetic noise suppressor of the present invention is characterized in that the magnetic resonance frequency is 8 GHz or higher, and the imaginary part of complex magnetic permeability (μ″H) at 8 GHz is higher than the imaginary part of complex magnetic permeability (μ″L) at 5 GHz. Such an electromagnetic noise suppressor can demonstrate sufficient electromagnetic noise suppressing effect over the entire sub-microwave band.
- The electromagnetic noise suppressor of the present invention preferably has a composite layer formed by integrating the binding agent and the magnetic material. Such an electromagnetic noise suppressor can have magnetic resonance frequency of 8 GHz or higher, and make the imaginary part of complex magnetic permeability μ″H at 8 GHz higher than the imaginary part of complex magnetic permeability μ″L at 5 GHz, and enables it to reduce the space requirement and weight. In the case in which the composite layer is a layer formed by physically vapor-depositing the magnetic material onto the binding agent, the composite layer has such a constitution as the magnetic material is dispersed in the binding agent so that the magnetic material and the binding agent are integrated with each other so as to provide high electromagnetic noise suppressing effect. The composite layer does not contain impurity ions so that there is no possibility of damage to the electronic circuit by the impurity ions.
- In the case in which the binding agent is a resin or rubber, the electromagnetic noise suppressor can be made flexible and have high strength.
- If the binding agent is a hardening resin, the magnetic material can be dispersed more uniformly in the binding agent that has not yet cured. After the binding agent has cured, the magnetic material does not crystallize into fine particles, and such a composite layer can be obtained as the binding agent and the magnetic material are integrated at the atomic level.
- A method of manufacturing an electromagnetic noise suppressor of the present invention includes a vapor deposition process of physically vapor-depositing a magnetic material onto a binding agent to form a composite layer on the surface of the binding agent. Such a manufacturing method enables it to easily manufacture the electromagnetic noise suppressor of the present invention that has the composite layer constituted from the binding agent and the magnetic material integrated together.
- A structure with an electromagnetic noise suppressing function of the present invention is a structure with at least a part of the surface thereof covered by the electromagnetic noise suppressor of the present invention. The structure with an electromagnetic noise suppressing function enables it to dispose the electromagnetic noise suppressor in a small space near a noise source and efficiently suppress electromagnetic noise in a sub-microwave band.
- A method of manufacturing a structure with an electromagnetic noise suppressing function of the present invention includes a coating process of coating at least a part of the surface of the structure with a binding agent, and a vapor deposition process of physically vapor-depositing a magnetic material onto the binding agent to form a composite layer on the surface of the binding agent. Such a manufacturing method enables it to easily manufacture the structure with an electromagnetic noise suppressing function that can efficiently suppress electromagnetic noise in a sub-microwave band.
-
FIG. 1 shows an image of a composite layer of an electromagnetic noise suppressor of the present invention observed with a high-resolution transmission electron microscope. -
FIG. 2 is a schematic diagram showing the vicinity of the composite layer in an example. -
FIG. 3 is a perspective view of a camera module that is an example of structure with an electromagnetic noise suppressing function of the present invention. -
FIG. 4 is a sectional view of a camera module that is an example of structure with an electromagnetic noise suppressing function of the present invention. -
FIG. 5 is a sectional view of a printed wiring board having electronic components mounted thereon that is an example of the structure with an electromagnetic noise suppressing function of the present invention. -
FIG. 6 is a graph showing the complex magnetic permeability versus frequency in electromagnetic noise suppressor of Example 1. -
FIG. 7 is a graph showing the complex magnetic permeability versus frequency in electromagnetic noise suppressor of Example 2. - The present invention will now be described in detail.
- The electromagnetic noise suppressor of the present invention has magnetic resonance frequency of 8 GHz or higher, and the imaginary part of complex magnetic permeability (μ″H) at 8 GHz being higher than the imaginary part of complex magnetic permeability (μ″L) at 5 GHz.
- Complex magnetic permeability is expressed as μ=μ′−j μ″. μ′ is the real part of the complex magnetic permeability and μ″ is the imaginary part of the complex magnetic permeability, that represents the magnetic loss related to the absorption of electromagnetic radiation.
- The magnetic resonance frequency is a frequency at which the value of the real part μ′ of the complex magnetic permeability becomes one-half of the peak value, and the frequency is higher than the peak frequency. The magnetic resonance frequency is regarded as the upper limit of frequencies at which noise current can be transformed into thermal energy by means of the magnetic loss characteristic of the magnetic material.
- In order for the electromagnetic noise suppressor of the present invention to fully demonstrate the electromagnetic noise suppressing effect over the sub-microwave band, it is necessary that the magnetic resonance frequency be 8 GHz or higher, and that the imaginary part μ″H of complex magnetic permeability at 8 GHz be higher than the imaginary part μ″L of complex magnetic permeability at 5 GHz, that is, the imaginary part μ″ of complex magnetic permeability increases monotonically with the frequency. The magnetic resonance frequency of the electromagnetic noise suppressor of the present invention is preferably 10 GHz or higher.
- The magnetic resonance frequency of the electromagnetic noise suppressor of the present invention having a magnetic resonance frequency of 8 GHz or higher, and the imaginary part μ″H of complex magnetic permeability at 8 GHz being higher than the imaginary part μ″L of complex magnetic permeability at 5 GHz can be made by forming the composite layer consisting of the magnetic material and part of the binding agent being integrated with each other at the nanometer scale.
- The composite layer is a layer formed by physical vapor deposition of the magnetic material on the binding agent, where the magnetic material applied by physical vapor deposition is dispersed in the binding agent and integrated therewith in the atomic state, without forming a homogeneous film.
- More specifically, as shown in the high-resolution transmission electron microscope image of
FIG. 1 and the sketch ofFIG. 2 which simplifies the electron microscope image, the electromagnetic noise suppressor 1 is constituted only from thecomposite layer 3 consisting of atoms of the magnetic material mixed with molecules of thebinding agent 2, and a layer consisting only of thebinding agent 2. - The
composite layer 3 consists of a portion where crystal lattice 4 is observed to be made up of atoms of the magnetic material disposed at spacing of several angstroms forming a very small crystal, a portion where only thebinding agent 2 is observed without presence of the magnetic material in a very small region, and a portion where atoms of themagnetic material 5 are observed to be dispersed in the binding agent without crystallizing. In other words, the magnetic material does not form fine particles having crystalline structure with clear grain boundary, but forms a complicated heterogeneous structure (a structure that is not homogeneous nor uniform) where the binding agent and the magnetic material are integrated at the nanometer scale. - The thickness of the composite layer is the depth of infiltration of the atoms of the magnetic material into the surface layer of the binding agent, that is dependent on such factors as the weight of the magnetic material deposited, kind of the binding agent and the conditions of physical vapor deposition, and is roughly in a range from 1.5 to 3 times the thickness of the magnetic material layer formed by the vapor deposition. When the thickness of the composite layer is set to be not less than 0.005 μm, atoms of the magnetic material and the binding agent can be integrated in a dispersed state, giving rise to a high loss characteristic in high frequency region due to the morphological anisotropy, thus achieving sufficient electromagnetic noise suppressing effect. When the thickness of the composite layer exceeds 3 μm, on the other hand, a clear crystalline structure and then a homogeneous film of the magnetic material is formed to form a bulk magnetic material. This leads to a decrease in morphological anisotropy and less electromagnetic noise suppressing effect. Therefore, thickness of the composite layer is preferably 1 μm or less, more preferably 0.3 μm or less.
- Examples of the binding agent include, but are not limited to, organic materials, for example, resins such as polyolefine resin, polyamide resin, polyester resin, polyether resin, polyketone resin, polyimide resin, polyurethane resin, polysiloxane resin, phenol resin, epoxy resin, acrylic resin and polyacrylate resin; diene rubbers such as natural rubber, isoprene rubber, butadiene rubber and styrene butadiene rubber; non-diene rubbers such as butyl rubber, ethylene propylene rubber, urethane rubber and silicone rubber. The binding agent may also be of thermoplastic or thermosetting nature, or a material that has not yet been cured. The resin or rubber described above that is modified, mixed or copolymerized may also be used.
- The binding agent may also be an inorganic material that has a low elastic modulus in shear that will be described later, such as an aero gel or foamed silica that has high void ratio and such a level of hardness that can capture ultra-fine particles. It may also be used in the form of a composite material with the organic material described above.
- The binding agent preferably has a low elastic modulus in shear in view of the ease of atoms of the magnetic material to infiltrate into the binding agent during the physical vapor deposition of the magnetic material. The elastic modulus in shear is preferably 5×107 Pa or less. A desirable value of elastic modulus in shear may be obtained by heating the binding agent to a temperature of 100 to 300° C., although the temperature must be controlled so as not to decompose or vaporize the material. When physical vapor deposition is carried out at the normal temperature, the binding agent is preferably an elastic material having hardness of about 80° (JIS-A).
- It is preferable that the binding agent have high elastic modulus in shear after being subjected to physical vapor deposition of the magnetic material, in order to maintain the heterogeneous structure described previously. By processing the binding agent to have a high elastic modulus in shear after physical vapor deposition of the magnetic material, it is made possible to surely prevent the atoms of the magnetic material or clusters thereof from aggregating and crystallizing into fine particles on the nanometer scale. Specifically, the elastic modulus in shear is preferably in a range from 1×107 Pa or higher in a temperature range in which the electromagnetic noise suppressor is used. It is preferable to crosslink the binding agent after physical vapor deposition of the magnetic material, in order to obtain the desired value of elastic modulus in shear.
- In this regard, the binding agent is preferably a thermosetting resin or a resin that is cured when exposed to an energy beam (ultraviolet light, electron beam) which allows the elastic modulus to be low during vapor deposition and to be increased by crosslinking after the vapor deposition.
- The binding agent may also include silane coupling agent, titanate coupling agent, nonionic surfactant, polar resin oligomer or the like, so that part of the magnetic material that has been turned into plasma or been ionized can react with the binding agent and be stabilized. Adding such an additive enables it to not only prevent oxidization but also prevent a homogeneous film from being formed by the aggregation of atoms so as to prevent the reflection of electromagnetic radiation by the homogeneous film, thereby improving the absorbing property.
- In addition to the above, the binding agent may also contain reinforcement fillers, flame retarding agents, anti-aging agents, anti-oxidizing agents, colorants, thixotropy enhancing agents, plasticizers, lubricants and heat resistance enhancing agents. Care should be exercised, however, since adding a hard material leads to collision with the atoms of the magnetic material, thus resulting in insufficient dispersion. Weatherability may also be improved by coating with silicon oxide or silicon nitride by vapor deposition, after the vapor deposition of the magnetic material.
- The electromagnetic noise suppressor of the present invention may have either a planar configuration such as sheet or a three-dimensional structure. The shape may also be adapted to the shape of a structure to be made as the product, when it is used to cover the surface of the structure as will be described later.
- The method of manufacturing the electromagnetic noise suppressor will now be described.
- The electromagnetic noise suppressor of the present invention can be made by forming the composite layer on the surface of the binding agent by physical vapor deposition of the magnetic material onto the binding agent.
- In the physical vapor deposition (PVD), a material is vaporized in a vacuum vessel and is deposited on a substrate that is placed in the vicinity of the material being vaporized, so as to form a thin film. The process is classified by the method of evaporation into vaporization process and sputtering process. Vaporization processes include EB vapor deposition and ion plating, and sputtering processes include high frequency sputtering, magnetron sputtering and opposing target type magnetron sputtering process.
- In the EB vapor deposition, since the vapor particle has small energy of 1 eV, less damage is caused on the substrate and the film tends to become porous and have insufficient strength, while the specific resistivity of the film increases.
- In the ion plating process, since ions of argon gas and vaporized particles are accelerated and collide with the substrate, particle energy is about 1 KeV, higher than in the case of EB. Therefore a film having high adhesive force can be obtained, although it cannot be avoided that particles having sizes on the micrometer scale, called droplets, deposit on the surface and cause interruptions of discharge. An oxide film may be formed by introducing a reactive gas such as oxygen.
- In the magnetron sputtering process, although the target (material to be vaporized) is utilized with less efficiency, growth rate is higher since strong plasma is generated by the effect of magnetic field and a high energy of several tens of electron volts (eV) is given to the particle. In the high frequency sputtering process, an insulating target may be used.
- Among the magnetron sputtering processes, the opposing target type magnetron sputtering process is a process where plasma is generated between opposing targets and is confined by the magnetic field, while the substrate is placed outside of the opposing targets so as to form a desired thin film without causing damage from the plasma. Therefore, a film of the same composition as that of the target that is made of a dense material can be formed without need to sputter the thin film of the substrate again and mitigating the collision of the sputtered atoms with further higher growth rate.
- In the case in which the binding agent is a resin (or rubber), covalent bonding energy of the resin is about 4 eV. Bonding energies of C—C, C—H, Si—O and Si—C, for example, are 3.6 eV, 4.3 eV, 4.6 eV and 3.3 eV, respectively. In the ion plating, magnetron sputtering, or opposing target type magnetron sputtering process, in contrast, the vaporized particles have high energies and therefore may collide with the binding agent and break part of the chemical bonding of the resin.
- Therefore, it is supposed that, when the binding agent made of resin (or rubber) has a sufficiently low elastic modulus in the present invention, molecules of the resin vibrate and are sometimes broken when the magnetic material is deposited, resulting in localized mixing of the atoms of the magnetic material and the resin and, with the atoms of the magnetic material infiltrating into the resin to a depth of up to 3 μm from the surface, cause interaction with the resin, so that the composite layer having heterogeneous structure of nanometer scale is formed.
- It is preferable to deposit the magnetic material with a particle energy of 5 eV or higher to the binding agent by physical vapor deposition, since it enables it to disperse a large amount of the magnetic material in the binding agent at the same time. Since a large amount of the magnetic material can be processed in a single deposition run, the electromagnetic noise suppressor having high electromagnetic noise suppressing effect can be easily made. Since velocity of the binding agent in vibration thereof is lower than the velocity of the particle, rate of vapor deposition is preferably set to be low in accordance to the timing of relaxation of the binding agent, about 60 nm/min or less depending on the kind of magnetic material.
- As the magnetic material to be vaporized in the vapor deposition process, a metal-based soft magnetic material, an oxide-based soft magnetic material and/or a nitride-based soft magnetic material is mainly used. Any one of these materials or a mixture of two or more of these materials may be used.
- As the metal-based soft magnetic material, iron or an iron alloy is commonly employed. As the iron alloy, Fe—Ni, Fe—Co, Fe—Cr, Fe—Si, Fe—Al, Fe—Cr—Si, Fe—Cr—Al, Fe—Al—Si or Fe—Pt alloy may be used. Any one of these materials or a mixture of two or more of these materials may be used. Either one of these metal-based soft magnetic materials or a mixture of two or more of these materials may be used. Besides iron and iron alloy, cobalt, nickel or an alloy thereof may also be used. Nickel has resistance against oxidation and is therefore preferably used independently.
- As the oxide-based soft magnetic material, ferrite is preferably used. Specifically, MnFe2O4, CoFe2O4, NiFe2O4, CuFe2O4, ZnFe2O4, MgFe2O4, Fe3O4, Cu—Zn-ferrite, Ni—Zn-ferrite, Mn—Zn-ferrite, Ba2Co2Fe12O22, Ba2Ni2Fe12O22, Ba2Zn2Fe12O22, Ba2Mn2Fe12O22, Ba2Mg2Fe12O22, Ba2Cu2Fe12O22 or Ba3Co2Fe24O41, may be used. These variations of ferrite may be used either independently or in a combination of two more kinds thereof.
- As nitride-based soft magnetic material, Fe2N, Fe3N, Fe4N, Fe16N2, etc., are known. These nitride-based soft magnetic materials have high magnetic permeability and high corrosion resistance, and are therefore preferably used.
- During the physical vapor deposition of the magnetic material onto the binding agent, since atoms of the magnetic material infiltrate into the binding agent in the form of plasma or ions, the composition of the magnetic material dispersed in the binding agent is not necessarily the same as that of the magnetic material before being vaporized. The magnetic material may have reacted with part of the binding agent and changed into paramagnetic material or antiferromagnetic material.
- The amount of the magnetic material deposited on the binding agent in a single deposition run is preferably 200 nm or less in terms of thickness of the magnetic material layer. When deposited to a larger thickness, limitation of the capacity of the binding agent to include the magnetic material is reached such that the magnetic material cannot be dispersed in the binding agent any more and is instead deposited on the surface, thereby forming a continuous bulk film that has uniform conductivity. Therefore, the amount of the magnetic material to be deposited is preferably 100 nm or less, and more preferably 50 nm or less. In view of the electromagnetic noise suppressing effect, the amount of the magnetic material to be deposited is preferably 0.5 nm or less.
- Since less amount of deposition leads to lower electromagnetic noise suppressing effect, the total amount of the magnetic material can be increased by stacking a plurality of composite layers. The total amount of deposition is preferably in a range from 10 to 500 nm in terms of total thickness of the magnetic material, while it depends on the required level of electromagnetic noise suppression. Part of the layers to be stacked may also be formed as bulk metal layers that have continuity, so as to have reflectivity to electromagnetic radiation. The layers may also be formed in composite structure with the dielectric material layer so as to control the electromagnetic noise suppressing effect.
- While there is no restriction on the thickness of the binding agent used in the vapor deposition process, it is preferably as small as possible in order to make a compact electromagnetic noise suppressor. Specifically, the thickness is preferably 50 μm or less and more preferably 10 μm or less.
- <Structure with Electromagnetic Noise Suppressing Function>
The structure with an electromagnetic noise suppressing function of the present invention is a structure with at least a part of the surface thereof covered by the electromagnetic noise suppressor of the present invention. - The structure may be, for example, a printed wiring board having electronic components mounted thereon, a semiconductor integrated circuit or the like.
- Now specific examples of the structure with an electromagnetic noise suppressing function of the present invention will be described below.
-
FIG. 3 andFIG. 4 show a camera module as an example of the structure with an electromagnetic noise suppressing function. The camera module includes a printedwiring board 12 that has animage sensor 11 mounted on the surface thereof, alens 13 that corresponds to theimage sensor 11, acamera holder 14 that holds thelens 13 and encloses theimage sensor 11 on the printedwiring board 12, anouter case 15 that fits on the outside of thecamera holder 14, and the electromagnetic noise suppressor 1 that covers the surface of theouter case 15. - Covering of the
outer case 15 with the electromagnetic noise suppressor 1 is carried out, for example, as follows. Theouter case 15 that is a structure formed from a resin by injection molding is dipped in epoxy resin solution that is a binding agent so as to cover the surface with epoxy resin of B stage having a thickness of 15 μm. Then a composite layer is formed on the epoxy resin by physical vapor deposition to equivalent thickness of 45 nm. Theouter case 15 that is provided with the electromagnetic noise suppressing function is fitted onto thecamera holder 14, thereby shielding the camera module from noise. -
FIG. 5 shows a printed wiring board as another example of the structure with an electromagnetic noise suppressing function. The printed wiring board includes acircuit 22 formed on asubstrate 21, asemiconductor package 23 and achip component 24 that are connected to thecircuit 22, and the electromagnetic noise suppressor 1 that covers the surface of the printed wiring board together with thecircuit 22, thesemiconductor package 23 and thechip component 24. - Covering of the printed wiring board with the electromagnetic noise suppressor 1 is carried out, for example, as follows.
- An insulating binding agent is applied to the printed wiring board to a thickness of about 50 μm so as to cover the
circuit 22, thesemiconductor package 23 and thechip component 24. The magnetic material is deposited onto the binding agent by physical vapor deposition so as to form the composite layer. This process is not a wet process and does not require washing operation to remove ions, and is capable of easily rendering the electromagnetic noise suppressing function. - To give electromagnetic noise suppressing function to a semiconductor integrated circuit, the magnetic material is deposited to a thickness of about 10 to 50 nm by physical vapor deposition to form a composite layer on an organic insulating film having a thickness from 200 nm to 100 μm that is formed from polyimide, polyparaxylene, polytetrafluoroethylene, polyaryl ether, polyxylylene, polyadamantane ether, polybenzo oxazole or benzocyclobutene resin that has been formed on a semiconductor wafer by spin coating process or CVD (chemical vapor deposition). The composite layer may also be formed partially by using a mask as required. Since this is a dry process, there is no influence of ionic impurity and there is no need for cleaning, and the process is preferable for the application to semiconductor wafers. When the electromagnetic noise suppressor having heterogeneous structure of nanometer scale is provided in the vicinity of microscopic semiconductor circuit, it is made possible to suppress the resonance of a digital circuit during pulse transmission and suppress radiation noise from being generated by impedance mismatch, thereby to improving the transmission characteristics such as transmission speed, even with a small amount of magnetic material.
- The electromagnetic noise suppressor of the present invention described above has a high resonance frequency of 8 GHz or higher, supposedly because the composite layer is formed where the magnetic material and the binding agent are integrated by physical vapor deposition so that even a small amount of the magnetic material can achieve the quantum effect originating from the heterogeneous structure of nanometer scale, magnetic anisotropy of the material, morphological magnetic anisotropy or anisotropy due to external magnetic field, although theoretical explanation has not been presented. It is considered that such a feature enables achievement of satisfactory magnetic characteristics and electromagnetic noise suppressing effects over the entire sub-microwave band with even a small amount of the magnetic material.
- Since the electromagnetic noise suppressor of the present invention can achieve the electromagnetic noise suppressing effect even with a small amount of the magnetic material, the amount of the magnetic material can be reduced significantly, resulting in weight reduction.
- Also, since the electromagnetic noise suppressor of the present invention can achieve sufficient electromagnetic noise suppressing effect even with the composite layer having a thickness as small as 0.3 μm or less, the electromagnetic noise suppressor can be formed with a small thickness, so as to decrease the space requirement.
- In the case in which the composite layer is formed by physical vapor deposition of the magnetic material onto the binding agent, the magnetic material is dispersed in the state of atoms into the binding agent so that the magnetic material and the binding agent are integrated to form the composite layer having high electromagnetic noise suppressing effect with a small amount of the magnetic material. The composite layer does not include impurity ions so that there is no possibility of damage to the electronic circuit by the impurity ions.
- Since the amount of the magnetic material can be reduced significantly, decrease in flexibility and in strength of the resin or rubber due to the magnetic material can be minimized in the case in which the binding agent is resin or rubber.
- Moreover, if the binding agent is a curable resin, the magnetic material is distributed uniformly in the binding agent prior to curing and, after being cured, the magnetic material can be suppressed from crystallizing into fine particles even when the electromagnetic noise suppressor is used at a high temperature, thus improving the weatherability.
- The structure with an electromagnetic noise suppressing function of the present invention (for example, printed wiring board or semiconductor integrated circuit) enables it to dispose the noise suppressor with small space requirement in the vicinity of the noise source and efficiently suppress electromagnetic noise in the sub-microwave band.
- Examples of the present invention will now be described.
- The measurement of magnetic permeability: Ultra-high frequency magnetic permeability measuring instrument PMM-9G1 manufactured by Ryowa Electronics Co., Ltd., was used. Observation of cross section: Cross section was observed with a transmission electron microscope H9000NAR manufactured by Hitachi, Ltd.
- Electromagnetic radiation absorbing characteristic: Transmission noise suppressing effect was evaluated by S parameter method using test fixture TF-3A, TF-18A for micro strip line having impedance of 50Ω manufactured by KEYCOM Corporation.
- Coupling coefficient in near field was evaluated using micro loop antenna type fixture manufactured by KEYCOM Corporation. Vector network analyzer 37247C manufactured by Anritsu Company was used.
- A silicone rubber that had been vulcanized having a thickness of 15 μm (elastic modulus in shear of 1×107 Pa at normal temperature containing wet silica) was provided as the binding agent on a polyethylene phthalate film used as the support layer having a thickness of 12 μm (elastic modulus in shear of 3.8×109 Pa at the normal temperature), and thereon a composite layer was formed by sputtering Fe—Ni-based soft magnetic metal to an equivalent thickness of 20 nm by physical vapor deposition of the opposing target type magnetron sputtering process, thereby to obtain the electromagnetic noise suppressor. Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature.
- Then a thin portion was sliced by means of a microtome from the electromagnetic noise suppressor thus obtained and, after polishing the cut surface by ion beam, cross section of the composite layer was observed with a high-resolution transmission electron microscope. The thickness of the composite layer was about 45 nm. The cross section thus observed is shown in
FIG. 1 . Magnetic permeability was measured with a magnetic permeability measuring instrument. As shown inFIG. 6 , relative intensity of μ″L was 250 and relative intensity of μ″H was about seven times the value described above. The magnetic resonance frequency (the frequency at which the value of μ′ becomes one-half of the peak value, and which is higher than the peak frequency) exceeded 9 GHz, the measurement limit of the instrument. The measurement of the electromagnetic radiation absorbing characteristics showed that reflection attenuation was −9.5 dB and transmission attenuation was −5.5 dB at 1 GHz, while reflection attenuation was −14 dB and transmission attenuation was −20 dB at 10 GHz. - An epoxy resin of B stage having a thickness of 25 μm (elastic modulus in shear of 8×106 Pa before curing and elastic modulus in shear of 2×109 after curing) was provided as the binding agent on a polyethylene terephthalate film that had been subjected to mold-release treatment and used as the support layer having a thickness of 12 μm, and thereon a composite layer was formed by depositing Fe—Ni-based soft magnetic metal to an equivalent thickness of 10 nm by physical vapor deposition of the opposing target type magnetron sputtering process. Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature. The epoxy sheet was removed from the polyethylene phthalate film and was cut into halves, and the epoxy sheet were placed on the other so that the composite layers were stacked alternately. The stack was heated to 40° C. for 6 hours then 120° C. for 2 hours so as to harden the epoxy resin, thereby to obtain the electromagnetic noise suppressor. As shown in
FIG. 7 , relative intensity of μ″L was 200 and relative intensity of μ″H was about five times the value described above. The magnetic resonance frequency (the frequency at which the value of μ′ becomes one-half of the peak value, and which is higher than the peak frequency) exceeded 9 GHz, the measurement limit of the instrument. The measurement of the electromagnetic radiation absorbing characteristics showed that internal coupling coefficient was −8 dB and mutual coupling coefficient was −7 dB at 3 GHz. - Metal Ni was deposited to a thickness of 30 nm on one side of a polyimide film used as the support layer having a thickness of 12 μm, and provided on the other side was vulcanized electrically conductive silicone rubber having a thickness of 7 μm (elastic modulus in shear of 2×107 Pa at the normal temperature with 15% by weight of carbon black included) as the binding agent. Then composite layers were formed on the top and bottom surfaces by depositing a Fe—Ni-based soft magnetic metal to equivalent thickness of 20 nm by physical vapor deposition of opposing target type magnetron sputtering process, thereby to obtain an electromagnetic noise suppressor. Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature. Relative intensity of μ″L of the imaginary part of the complex magnetic permeability was 180 and relative intensity of μ″H was about six times the value described above. The magnetic resonance frequency (the frequency at which the value of μ′ becomes one-half of the peak value, and which is higher than the peak frequency) exceeded 9 GHz, the measurement limit of the instrument. The measurement of the electromagnetic radiation absorbing characteristics showed that internal coupling coefficient was −3 dB and mutual coupling coefficient was −4 dB at 1 GHz.
- An epoxy resin of B stage containing NBR (elastic modulus in shear of 8×106 Pa before curing and elastic modulus in shear of 8×108 Pa after curing) was provided as the binding agent on a metallic conductor formed on a polyimide film with wiring pitch of 0.3 mm, and thereon a composite layer was formed by depositing Fe—Ni-based soft magnetic metal to an equivalent thickness of 15 nm by physical vapor deposition of the opposing target type magnetron sputtering process. Sputtering was carried out by applying a low negative voltage so as to impart energy of 8 eV to the vaporized particles while maintaining the substrate at the normal temperature. The sample was heated to 40° C. for 6 hours then 120° C. for 2 hours so as to harden the epoxy resin, thereby to obtain a printed wiring board having the electromagnetic noise suppressor provided thereon.
- The wiring board, an LCD (controller LSI is provided on glass) and a CPU of a mobile telephone were connected with each other. Display of moving picture was compared with one that was not provided with the electromagnetic noise suppressor, and the Example showed a display that was not influenced by crosstalk without faulty signal compared to that without the electromagnetic noise suppressor.
- The electromagnetic noise suppressor of the present invention can be used to cover electronics apparatus and electronic components, and enables the manufacture of electronic apparatuses and electronic components that are smaller and lighter in weight while achieving sufficient electromagnetic noise suppressing effect over entire the sub-microwave band.
Claims (2)
1. A method of manufacturing an electromagnetic noise suppressor, the method comprising:
physically vapor-depositing a magnetic material onto a binding agent to form a composite layer on the surface of the binding agent, thus obtaining an electromagnetic noise suppressor having a magnetic resonance frequency of 8 GHz or higher, and the imaginary part μ″H of complex magnetic permeability at 8 GHz higher than the imaginary part μ″L of complex magnetic permeability at 5 GHz.
2. A method of manufacturing a structure with an electromagnetic noise suppressing effect, the method comprising:
coating at least a part of the surface of the structure with a binding agent; and
physically vapor-depositing a magnetic material onto the binding agent to form a composite layer on the surface of the binding agent.
Priority Applications (1)
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US12/551,208 US20090314634A1 (en) | 2004-02-24 | 2009-08-31 | Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function and their manufacturing methods |
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US10/538,132 US7625640B2 (en) | 2004-02-24 | 2004-02-24 | Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function, and method of manufacturing the same |
PCT/JP2004/002104 WO2005081609A1 (en) | 2004-02-24 | 2004-02-24 | Electromagnetic wave noise suppressor, structural body with electromagnetic wave noise suppressing function, and process for producing them |
US12/551,208 US20090314634A1 (en) | 2004-02-24 | 2009-08-31 | Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function and their manufacturing methods |
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US10/538,132 Division US7625640B2 (en) | 2004-02-24 | 2004-02-24 | Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function, and method of manufacturing the same |
PCT/JP2004/002104 Division WO2005081609A1 (en) | 2004-02-24 | 2004-02-24 | Electromagnetic wave noise suppressor, structural body with electromagnetic wave noise suppressing function, and process for producing them |
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US12/551,208 Abandoned US20090314634A1 (en) | 2004-02-24 | 2009-08-31 | Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function and their manufacturing methods |
US12/551,184 Expired - Fee Related US8017255B2 (en) | 2004-02-24 | 2009-08-31 | Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function, and method of manufacturing the same |
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US (3) | US7625640B2 (en) |
JP (1) | JP4417377B2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN100455178C (en) | 2009-01-21 |
JP4417377B2 (en) | 2010-02-17 |
US7625640B2 (en) | 2009-12-01 |
US8017255B2 (en) | 2011-09-13 |
CN1717968A (en) | 2006-01-04 |
US20060038630A1 (en) | 2006-02-23 |
US20090316370A1 (en) | 2009-12-24 |
JPWO2005081609A1 (en) | 2007-08-30 |
WO2005081609A1 (en) | 2005-09-01 |
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