US20100014821A1 - Optical control device - Google Patents

Optical control device Download PDF

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US20100014821A1
US20100014821A1 US12/522,809 US52280908A US2010014821A1 US 20100014821 A1 US20100014821 A1 US 20100014821A1 US 52280908 A US52280908 A US 52280908A US 2010014821 A1 US2010014821 A1 US 2010014821A1
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line
defect
dielectric pillars
contained
waveguide
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US8208776B2 (en
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Masatoshi Tokushima
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NEC Corp
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NEC Corp
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/1225Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/20Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 delay line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/32Photonic crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00Function characteristic
    • G02F2203/05Function characteristic wavelength dependent
    • G02F2203/055Function characteristic wavelength dependent wavelength filtering

Definitions

  • This invention relates to an optical control device and, more particularly, to an optical control device usable for an optical delay element for use in an optical integrated circuit.
  • Patent Document 1 a device for changing a spot size of light guided by a light waveguide is disclosed in Patent Document 1, while an optical control device that has a dispersion controlling effect is disclosed in Patent Document 2.
  • Patent Document 1 JP Patent Kokai JP-A-2003-240985
  • Patent Document 2 JP Patent Kokai JP-A-2005-274844
  • photonic crystals are stirring up notice as being a technique having a potential capability of reducing the size and the power consumption per unit performance of an optical device fabricated on a substrate to one hundredth or even to one ten-thousandth.
  • a photonic crystal is a generic name of structures the refractive index of which is caused to vary periodically.
  • photonic crystals are used in general for an electromagnetic wave, they are so named because they were inherently devised for optical use and also because they were endowed with a periodic structure like that of a crystal.
  • the photonic crystals exhibit a wide variety of optical features, based on the periodicity of their refractive index. Their most representative feature is the photonic band gap (PBG).
  • PBG photonic band gap
  • the light of a particular frequency band (or a wavelength band) ceases to be able to be propagated through the photonic crystal. If the light frequency and the wave number (, or the amplitude of wave vector in a certain direction) of light are assigned to the ordinate and abscissa axes, respectively, and the relationship between the frequency and the wave number of light propagated through the photonic crystal is plotted, we obtain a diagram termed a dispersion relationship diagram or a photonic band diagram.
  • the frequency range in which plots are present in succession and distributed as a curve is termed a band.
  • the light that cannot be propagated through the photonic crystal has a frequency that is located intermediate between neighboring bands, that is, in a gap between the neighboring bands.
  • the forbidden band, through which light cannot be propagated is termed a photonic band gap (PBG).
  • the photonic crystal may be used as a frequency filter or a wavelength filter.
  • miniscule defects are arrayed within the photonic crystal in succession in a row to form a line defect, even the light having the frequency within the PBG can be propagated along the defect, while the light is confined in the vicinity of the line defect. It may thus be seen that the line defect of the photonic crystal plays the role of a waveguide. This waveguide may be called a line-defect waveguide.
  • a light modulator or a light switch may be constructed by solely the waveguide or by the waveguide and the filter in combination.
  • the photonic crystal is expected to be used as a platform for the optical integrated circuit.
  • a photonic crystal desirably has a two-dimensional periodicity. If it is attempted to utilize the effect of the PBG, such as light confining effect, the photonic crystal must have three-dimensional periodicity in three perpendicular directions of x, y and z.
  • fabrication process for a three-dimensional periodic structure is complex and hence is expensive in manufacture.
  • a two-dimensional photonic crystal, having a two-dimensional periodicity in a substrate surface and having a finite size along the direction perpendicular to the substrate surface, that is, along the direction of substrate thickness is often used. In such case, light confinement along its thickness in a line-defect waveguide or in a point defect resonator is secured not by the PGG effect, but rather by total internal reflection caused by difference in the refractive index.
  • the optical characteristic of the two-dimensional photonic crystal having a finite thickness is not perfectly coincident with that of a two-dimensional photonic crystal having an infinite thickness, that is, a crystal that is uniform along its thickness.
  • the refractive index distribution along the direction of thickness of the two-dimensional photonic crystal having a finite thickness exhibits mirror symmetry (, or reflection symmetry) within a structural region where light is propagated, the optical characteristic of the two-dimensional photonic crystal having the finite thickness is roughly coincident with that of the two-dimensional photonic crystal having an infinite thickness.
  • Prediction of the operation of a device of a photonic crystal with infinite thickness that is, a device of the two-dimensional photonic crystal uniform along its thickness, is easier than that for which a finite thickness is taken into account.
  • device implementation may be facilitated by exploiting the two-dimensional photonic crystal having refractive index distribution with the mirror symmetry.
  • a hole-type photonic crystal and a pillar-type photonic crystal there are a hole-type photonic crystal and a pillar-type photonic crystal.
  • a line-defect waveguide in the latter type crystal, that is, the pillar-type photonic crystal is superior inter alia in the wave guiding characteristic.
  • FIG. 1 depicts a perspective view of a typical structure of a pillar-type photonic crystal with a finite thickness.
  • a multiplicity of pillars 2 with a finite height, made of a dielectric material is arrayed in a square lattice pattern in a background medium 1 .
  • the dielectric material of the pillars has a dielectric constant higher than that of the background medium.
  • the hole-type photonic crystal has a structure such as, in the structure shown in FIG. 1 , the background medium 1 is made of a high dielectric constant material and the pillars 2 (columnar-shaped structures) are made of a low dielectric constant material.
  • a line-defect waveguide can be formed by providing a row of dielectric pillars 3 as a line defect, a diameter of the pillars in the row, for example, being smaller than that of the pillars that make up otherwise perfect original crystal.
  • the row of the columns of the line defect is equivalent to a core in a waveguide that confines light by total internal reflection, such as an optical fiber, while the lattice(s) formed by pillars, disposed on each side of the row of pillars of the line defect, is(are) equivalent to a cladding.
  • dielectric pillars in a photonic crystal are not limited to (circular) columns, and can be in any shape. It should be noted that a given dielectric pillar being ‘thicker’ or ‘thinner’ than other pillars means that the pillar in question is respectively larger or smaller in cross-sectional area than the others. In the present specification, the ‘dielectric pillar’ is defined as a pillar that has a dielectric constant, and encompasses air or vacuum, too.
  • the line-defect waveguide features a small group velocity and hence may be used as an optical delay element.
  • the group velocity being small increases time of interaction between the guided light and the crystal material, as a result of which the effect of the interaction can be enhanced to a sufficient degree even if the waveguide is short. In other words, the effect of interaction per unit length is increased.
  • non-linear effects can efficiently be derived.
  • the group velocity of the guided light can be as small as one-twentieth to one-hundredth the speed of light in vacuum, as an example.
  • a short waveguide can provide long delay time and hence a strong interaction with the material.
  • the group velocity dispersion Such wavelength-dependent variation in the group velocity is termed the ‘group velocity dispersion’.
  • the line-defect waveguide of the columnar square-lattice photonic crystal does exhibit the group velocity dispersion.
  • line-defect waveguide of the columnar square-lattice photonic crystal guides an optical signal spanning a non-negligible range of wavelength, such as ultra-high speed optical signal, a problem may be that the signal waveform becomes collapsed (or deformed) after passing through the waveguide.
  • Patent Document 2 discloses an optical control device that compensates for the group velocity dispersion.
  • the optical control device disclosed therein is provided with a structure formed by directly interconnecting a plurality of photonic crystals having different values of group velocity dispersion, raising a problem that a loss due to reflection at a connection interface may be produced.
  • the square-lattice photonic crystal may also be a photonic crystal of an arbitrary two-dimensional Bravais lattice.
  • an optical control device including a plurality of line-defect waveguides provided in a photonic crystal, in which each line-defect waveguide includes a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice.
  • the optical control device comprises: a first line-defect waveguide; a second line-defect waveguide provided with the dielectric pillars having a thickness (cross-sectional area) different from that of the dielectric pillars of the first line-defect waveguide; and a third line-defect waveguide.
  • the third line-defect waveguide is arranged between the first and second line-defect waveguides and provided with the dielectric pillars whose cross sectional areas are gradually varied from those of the dielectric pillars of the first line-defect waveguide to those of the dielectric pillars of the second line-defect waveguide along a wave guiding direction.
  • the third line-defect waveguide is arranged between the first and second line-defect waveguides and provided with the dielectric pillars whose cross-sectional shapes are gradually varied from those of the dielectric pillars of the first line-defect waveguide to those of the dielectric pillars of the second line-defect waveguide in the course from the first line-defect waveguide towards the second line-defect waveguide along the wave guiding direction.
  • an optical control device including a plurality of line-defect waveguides provided in a photonic crystal, in which each line-defect waveguide including a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice.
  • the optical control device comprises: a first line-defect waveguide; a second line-defect waveguide provided with the dielectric pillars that have lattice-point intervals (that is, local lattice constants) different from those of the dielectric pillars of the first line-defect waveguide; and a third line-defect waveguide.
  • the third line-defect waveguide is arranged between the first and second line-defect waveguides and provided with dielectric pillars whose lattice-point intervals are gradually varied from those of the dielectric pillars of the first line-defect waveguide to those of the dielectric pillars of the second line-defect waveguide in the course from the first line-defect waveguide towards the second line-defect waveguide, along the wave guiding direction.
  • a further line-defect waveguide whose dielectric pillars have cross-sectional areas gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of the optical control device including the first to third line-defect waveguides.
  • the length along the wave guiding direction of the third line-defect waveguide is not less than five times a lattice pitch (lattice constant).
  • the dielectric pillars contained in the line defect of the first line-defect waveguide and the dielectric pillars not contained in the line defect are thicker (larger in cross section) than the that of the dielectric pillars contained in a line defect of the second line-defect waveguide and dielectric pillars not contained in the line defect.
  • the dielectric pillars contained in the line defect of the second line-defect waveguide and the dielectric pillars not contained in the line defect are thicker than that of the dielectric pillars contained in a line defect of the first line-defect waveguide and dielectric pillars not contained in the line defect.
  • thicknesses (cross-sectional areas) of the dielectric pillars contained in the line defect of the first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of the first and second line-defect waveguides, and the thicknesses (cross-sectional areas) of dielectric pillars not contained in the line defect(s) of the first and second line-defect waveguides are equal.
  • thicknesses (cross-sectional areas) of the dielectric pillars not contained in the line defect of the first and second line-defect waveguide differ only with respect to those of the dielectric pillars not contained in the line defect(s) of the first and second line-defect waveguides, and the thicknesses (cross-sectional areas) of the dielectric pillars contained in the line defect(s) of the first and second line-defect waveguides are equal.
  • the thicknesses (cross-sectional areas) of the dielectric pillars contained in the line defects of the first and second line-defect waveguides gradually change in opposite directions between the dielectric pillars not contained in the line defect of the first and second line-defect waveguides and the dielectric pillars contained in the line defect of the first and second line-defect waveguides.
  • a further line-defect waveguide whose dielectric pillars have cross-sectional shapes gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of the optical control device including the first to third line-defect waveguides.
  • the length along the wave guiding direction of the third line-defect waveguide is not less than five lattice periods.
  • the cross-sectional shapes of the dielectric pillars contained in the line defect of the first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of the first and second line-defect waveguides, and the cross-sectional shapes of dielectric pillars not contained in the line defect of the first and second line-defect waveguides are equal.
  • the cross-sectional shapes of the dielectric pillars not contained in the line defect of the first and second line-defect waveguides differ only with respect to those of dielectric pillars not contained in the line defect of the first and second line-defect waveguides, and the cross-sectional shapes of the dielectric pillars contained in the line defects of the first and second line-defect waveguides are equal.
  • the cross-sectional shapes of the dielectric pillars contained in the line defects in the first and second line-defect waveguides are equal to the cross-sectional shapes of the dielectric pillars not contained in the line defects in the first and second line-defect waveguides.
  • the cross-sectional shapes of the dielectric pillars contained in the line defects are different from the cross-sectional shapes of dielectric pillars not contained in the line defects.
  • a further line-defect waveguide whose lattice-point intervals are gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of the optical control device including the first to third line-defect waveguides.
  • the length along the wave guiding direction of the third line-defect waveguide is not less than five times a lattice period (pitch).
  • the lattice-point intervals of the dielectric pillars contained in the line defect of the first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of the first and second line-defect waveguides, and the lattice-point intervals of dielectric pillars not contained in the line defect of the first and second line-defect waveguides are equal.
  • the lattice-point intervals of the dielectric pillars contained in the line defects are equal to the lattice-point intervals of the dielectric pillars not contained in the line defects.
  • lattice-point intervals of the dielectric pillars contained in the line defect are different from lattice-point intervals of the dielectric pillars not contained in the line defects.
  • the dielectric pillars are formed of a material higher in dielectric constant than a background medium.
  • the dielectric pillar(s) is(are) a hole(s) provided in a high-refractive-index material.
  • the two-dimensional Bravais lattice is a square lattice.
  • the optical control device of the present invention group velocity dispersion can be compensated while delay is kept long for application as an optical delay element.
  • the delay element of the present invention may be applied even for an ultra-high speed signal spanning non-negligible range of wavelength. It is observed that, since the adverse effect of the waveform distortion due to group velocity dispersion can be suppressed, the optical control device (optical delay element) can be extended in its length along the wave guiding direction to significantly protract the delay time.
  • reflection of light may be suppressed by interconnecting two different material types differing in the group velocity dispersion through a line-defect waveguide provided with a gradually varying structure.
  • FIG. 1 is a perspective view showing a pillar-shaped photonic crystal having a finite thickness.
  • FIG. 2 is a cross-sectional view showing an optical control device according to a first exemplary embodiment.
  • FIG. 3 is a cross-sectional view showing an optical control device according to the first exemplary embodiment.
  • FIG. 4 is a cross-sectional view showing an optical control device according to the first exemplary embodiment.
  • FIG. 5 is a cross-sectional view showing an optical control device according to a second exemplary embodiment.
  • FIG. 6 is a cross-sectional view showing an optical control device according to the second exemplary embodiment.
  • FIG. 7 is a cross-sectional view showing an optical control device according to the second exemplary embodiment.
  • FIG. 8 is a cross-sectional view showing an optical control device according to a third exemplary embodiment.
  • FIG. 9 is a cross-sectional view showing an optical control device according to the third exemplary embodiment.
  • FIG. 10 is a cross-sectional view showing an optical control device according to the third exemplary embodiment.
  • FIG. 11 is a schematic view for illustrating a structure of a line defect in a two-dimensional Bravais lattice.
  • an optical control device usable as an optical delay element, is comprised of a pillar-shaped square-lattice photonic crystal.
  • This photonic crystal includes a multiplicity of pillars of a dielectric material of a finite height in which there is provided a line-defect waveguide.
  • the optical control device includes a first line-defect waveguide 5 , a second line-defect waveguide 11 and a third line-defect waveguide 8 .
  • the second line-defect waveguide 11 as a line-defect waveguide in a square-lattice photonic crystal, is provided with a multiplicity of pillars thinner than the dielectric pillars of the first line-defect waveguide.
  • the third line-defect waveguide 8 is provided with dielectric pillars, the thickness (cross-sectional area) of which is gradually varied from the thickness of the pillars of the first line-defect waveguide to that of the pillars of the second line-defect waveguide along the wave guiding direction of the waveguides.
  • the optical control device also includes a set of waveguides composed of the first line-defect waveguide 5 , second line-defect waveguide 11 and the third line-defect waveguide 8 , in which the thicknesses of the dielectric pillars are varied continuously (consecutively) in this sequence.
  • the group velocity dispersion of the first line-defect waveguide 5 is, opposite to that of the second line-defect waveguide 11 .
  • the first line-defect waveguide 5 exhibits ordinary dispersion such that light with a shorter wavelength is guided at a speed lower than that of light with a longer wavelength.
  • the second line-defect waveguide 11 exhibits extraordinary dispersion such that light with a shorter wavelength is guided at a higher speed than that of light with a longer wavelength.
  • the two group velocity dispersions cancel each other on the whole.
  • the manner of spreading (distribution) of the electromagnetic field of light guided through the first line-defect waveguide 5 differs from that of light guided through the second line-defect waveguide 11 .
  • the two waveguides are simply joined to each other, reflection or radiation of the guided light occurs at the joint.
  • the third line-defect waveguide 8 overcomes this problem.
  • the third line-defect waveguide 8 undergoes gentle (or step-like) structural transitions between the first line-defect waveguide 5 and the second line-defect waveguide 11 .
  • the distribution of electromagnetic fields of the guided light also undergoes gentle (i.e., gradual) changes between the first line-defect waveguide 5 and the second line-defect waveguide 11 , such that there scarcely occurs reflection or radiation of the guided light in the transition area.
  • the waveguides are connected to waveguides different from the waveguides that compose the optical control device in order to provide for high speed propagation of the light signal. It is preferred in such case to provide a line-defect waveguide, the pillar thicknesses of which are gradually varied, on one side or each side of the optical control device, in order to provide for continuous optical coupling of the optical control device to the high speed waveguides.
  • the third line-defect waveguide 8 has a function of achieving continuous optical coupling between the first line-defect waveguide 5 and the second line-defect waveguide 11 .
  • the third line-defect waveguide 8 is preferably not less than 5 periods (pitch) of the lattice in the wave guide direction.
  • comparison of the thicknesses of the dielectric pillars of the first line-defect waveguide 5 to those of the dielectric pillars of the second line-defect waveguide 11 indicates that dielectric pillars 7 contained in the line-defect of the first line-defect waveguide 5 are thicker than dielectric pillars 13 contained in the line defect of the second line-defect waveguide, and that dielectric pillars 6 not contained in the line defect of the first line-defect waveguide are thicker than dielectric pillars 12 not contained in the line defect of the second line-defect waveguide.
  • the thickness ratio of the dielectric pillars 7 of the first line-defect waveguide 5 and the dielectric pillars 13 of the second line-defect waveguide 11 can be set so as to be equal or approximately equal to the thickness ratio of the dielectric pillars 6 not contained in the line defect of the first line-defect waveguide 5 and the dielectric pillars 12 not contained in the line defect of the second line-defect waveguide 11 .
  • This thickness ratio is correlated with the intensity of confinement of guided light to the vicinity of the line defect.
  • the optical control device shown in FIG. 2
  • the spread of the guided light in the vicinity of the line defect may be kept to be substantially equal throughout the entire device.
  • the structure of the optical control device, shown in FIG. 2 is therefore effective when it is desired to maintain the width of the line-defect waveguide to a certain value fixed according to manufacturing constraints.
  • the thicknesses of the dielectric pillars of a first line-defect waveguide 14 may be equal to those of the dielectric pillars of a second line-defect waveguide 20 except the thicknesses of the dielectric pillars 16 and 22 of the respective line defects which are different.
  • the advantages of protracting the delay time and canceling out the group velocity dispersion are approximately the same as in the case of changing not only the thicknesses of the dielectric pillars 16 , 22 contained in the line defects from each other but also changing those of the dielectric pillars 15 , 21 not contained in the line defects from each other. It is observed, however, that changing only the thicknesses of the dielectric pillars contained in the line defects give rise to a merit that implementation of the third line-defect waveguide 17 may be facilitated since it is then only necessary to change the thicknesses of the dielectric pillars 19 in the line-defect row.
  • the optical control device of this construction has a merit that, since the thicknesses of the dielectric pillars 25 , 28 or 31 , contained in the line defects where the energy of the guided light is concentrated, are unchanged, a third line-defect waveguide 26 is relatively free from losses otherwise caused by reflection or radiation.
  • the dielectric pillars contained in the line defect of the first line-defect waveguide may be thicker in thickness than those contained in the line defect of the second line-defect waveguide, while the dielectric pillars not contained in the line defect of the first line-defect waveguide may be thinner in thickness than those in the line defect of the second line-defect waveguide.
  • a light control element has a line-defect waveguide in a pillar-shaped square-lattice photonic crystal provided with a multiplicity of dielectric pillars that have a finite height, as shown in FIG. 5 .
  • the optical control device includes a first line-defect waveguide 32 , a second line-defect waveguide 38 and a third line-defect waveguide 35 .
  • the second line-defect waveguide 38 is a line-defect waveguide in a square-lattice photonic crystal, which includes dielectric pillars 39 , 40 differing in cross-sectional shape from dielectric pillars 33 , 34 of the first line-defect waveguide 32 .
  • the third line-defect waveguide 35 includes dielectric pillars 36 , 37 .
  • the cross-sectional shapes of the dielectric pillars 36 is(are) gradually varied from the cross-sectional shapes of the dielectric pillars 33 of the first line-defect waveguide 32 to those of the dielectric pillars 39 of the second line-defect waveguide 38 along the wave guiding direction of the waveguide.
  • the cross-sectional shapes of the dielectric pillars 37 are gradually varied from the cross-sectional shapes of the dielectric pillars 34 of the first line-defect waveguide 32 to those of the dielectric pillars 40 of the second line-defect waveguide 35 along the wave guiding direction of the waveguide.
  • the optical control device includes a set of waveguides in which the first line-defect waveguide 32 , the third line-defect waveguide 35 and second line-defect waveguide 38 are joined together in this order, the cross-sectional shapes of the dielectric pillars being changed continuously (consecutively).
  • the second exemplary embodiment corresponds to what is constructed by substituting changes in the cross-sectional shapes for changes in thicknesses of the dielectric pillars of the first exemplary embodiment.
  • the first exemplary embodiment is suited for suppressing the group velocity dispersion of the optical control device, operating as an optical delay element, to substantially zero.
  • the first exemplary embodiment leaves something to be desired in that group velocity dispersion may not be suppressed over a broad frequency range in its entirety.
  • the second exemplary embodiment is slightly inferior to the first exemplary embodiment in reducing the group velocity dispersion to approximately zero; however, with the second exemplary embodiment, the wavelength dependency of the group velocity dispersion of the entire optical control device can be finely (precisely) controlled over a wide frequency range by varying the cross-sectional shapes of the dielectric pillars.
  • the structure of the optical control device of the second exemplary embodiment is effective in the case where it is desired to endow the light transmitted through the optical control device with specified group velocity dispersion.
  • the present optical control device may be provided on its one side or on each side with a line-defect waveguide having the dielectric pillars whose cross-sectional shapes are varied gradually (stepwise).
  • the third line-defect waveguide is preferably not shorter than five times a period (pitch) along the wave guiding direction.
  • the basic structure of the first and second line-defect waveguides is a structure shown in FIG. 5 , in which, in each of the first and second line-defect waveguides, the cross-sectional shapes of the dielectric pillars contained in the line defect(s) are the same as those of the dielectric pillars not contained in the line defects.
  • the cross-sectional shapes of the dielectric pillars contained in the line defect may be different from those of the dielectric pillars not contained in the line defect in at least one of the first and second line-defect waveguides ( FIGS. 6 and 7 ).
  • a third exemplary embodiment of the present invention is directed to an optical control device, in particular an optical delay element which is comprised of a pillar-type square-lattice photonic crystal that has dielectric pillars with a finite height, and also has a line defect, as shown in FIG. 8 .
  • the optical control device includes a first line-defect waveguide 59 , a second line-defect waveguide 65 and a third-line-defect waveguide 62 .
  • the second line-defect waveguide 65 is made up of dielectric pillars 66 and 67 .
  • the dielectric pillars 66 have lattice-point intervals, that is, local lattice constants, different from those of dielectric pillars 60 of the first line-defect waveguide 59
  • the dielectric pillars 67 have lattice point intervals, that is, local lattice constants, different from those of dielectric pillars 61 of the first line-defect waveguide 59
  • the third line-defect waveguide 62 is interposed between the first line-defect waveguide 59 and the second line-defect waveguide 65 , and is made up of dielectric pillars 63 and 64 .
  • the lattice point intervals of the dielectric pillars 63 are varied gradually from those of the first line-defect waveguide 59 to those of the second line-defect waveguide 65 in the course from the first line-defect waveguide 59 towards the second line-defect waveguide 65 .
  • the lattice point intervals of dielectric pillars 64 are varied gradually from those of the first line-defect waveguide 59 to those of the second line-defect waveguide 65 in the course from the first line-defect waveguide 59 towards the second line-defect waveguide 65 .
  • the ‘lattice point interval’ means a distance (interstice) between the centers of cross sections of a dielectric pillar of interest and a dielectric pillar adjacent thereto
  • the ‘local lattice constant’ means a summation average of the all intervals between the centers of cross sections of a dielectric pillar of interest and the dielectric pillars adjacent thereto.
  • the present third exemplary embodiment corresponds to what is constructed by substituting variations in the lattice point intervals (local lattice constants) of dielectric pillars for variations in thicknesses (cross-sectional areas) of the dielectric pillars in the first exemplary embodiment. If the present third exemplary embodiment is used as an optical delay element, it is possible to realize substantially the same characteristic as that of the first exemplary embodiment with respect to controlling of the group velocity dispersion.
  • the third exemplary embodiment may be said to differ from the first exemplary embodiment in that, since control of the positions of lattice points taken up by the dielectric pillars is easier than that of the thicknesses of the dielectric pillars, it is easier with the third exemplary embodiment to fabricate an optical control device conforming to design parameters.
  • a line-defect waveguide the lattice point intervals of dielectric pillars of which are varied gradually along the wave guiding direction, may be provided on one or each side of the optical control device comprised of the first to third line-defect waveguides. It is thereby possible to provide for optical coupling of the optical control device to waveguides of different characteristics without producing reflections or radiations of the guided light.
  • the third line-defect waveguide 62 is preferably not shorter than five times a period along the wave guiding direction. It is thereby possible to suppress reflections or radiations in the third line-defect waveguide 8 to a substantially negligible value.
  • the present optical control device may be implemented by a structure in which only the lattice point intervals of the dielectric pillars 70 contained in a line defect of a first line-defect waveguide differ from those of the dielectric pillars 76 contained in a line defect of a second line-defect waveguide.
  • the dielectric pillars 69 and 75 not contained in the line defects, has the same stricture.
  • FIG. 9 shows a concrete example structure for this case. That is, with this example stricture, the intervals of the dielectric pillars 70 , 76 , contained in the line defects, are constant, while those of the dielectric pillars 69 , 75 , not contained in the line defects, have the same value and constant.
  • the lattices (points) of the dielectric pillars 69 are disposed close to both sides of the dielectric pillars 70 contained in the line defect of the first line-defect waveguide.
  • the lattices (points) of the dielectric pillars 75 are disposed apart from both sides of the dielectric pillars 76 contained in the line defect of the second line-defect waveguide 74 .
  • a third line-defect waveguide guide 71 the lattice points of the dielectric pillars 72 , not contained in its line defect, are disposed gradually removed (more apart) from both sides of the dielectric pillars 73 contained in the line defect in a width-wise direction, that is, in a direction normal to the wave guiding direction and parallel to the plane of the two-dimensional lattice in the course of progressing from the first line-defect waveguide 68 towards the second line-defect waveguide 74 .
  • the optical control device has such a structure in which the lattice point intervals between the dielectric pillars 80 , 86 of the line defects and dielectric pillars disposed closest to the line defects are constant, and in which the other lattice point intervals between the dielectric pillars are gradually increased in the width-wise direction, in the course of progressing from the first line-defect waveguide 78 towards the second line-defect waveguide 84 , that is, in the direction perpendicular to the wave guiding direction and parallel to the two-dimensional lattice plane. It is only the lattice point intervals in the width-wise direction of the dielectric pillars 79 , 85 not contained in the line defect rows that are widened in this case.
  • a further different structure of an optical control device may be provided as such a one in which the lattice-point intervals between the dielectric pillars contained in the line defect are equal to those between the dielectric pillars not contained in the line defect for each of the first and second line-defect waveguides.
  • a further different structure of an optical control device may be provided as one in which, in at least one of the first line-defect waveguide and the second line-defect waveguide, the lattice point intervals between dielectric pillars contained in the line defect differ from those between the dielectric pillars not contained in the line defect.
  • the dielectric pillars are formed of a material higher in dielectric constant than the background medium.
  • the dielectric pillars may be formed of a material lower in dielectric constant than the background medium.
  • the dielectric pillars is(are) a hole(s) (void) provided in a high dielectric constant material.
  • the line-defect waveguide of the pillar-shaped square lattice photonic crystal in each of the first to third exemplary embodiments may be formed so as to have low group velocity and different effects of group velocity dispersion. This is made possible by properly adjusting the thicknesses and/or shapes of the dielectric pillars provided in the lattice or the lattice point intervals. In particular, if it has been possible to form two or more waveguides so that these waveguides will have reverse group velocity dispersion effects, and if these waveguides may be interconnected via a gently changing structure, it is possible to reduce overall group velocity dispersion without causing reflection between the interconnected waveguides as well as to obtain prolonged optical delay time.
  • the crystal system of the two-dimensional lattice of the photonic crystal is assumed to be a square lattice. This is of course not restrictive such that any of two-dimensional Bravais lattice structures may be used in place of the square lattice.
  • the direction of the basic translational vector in the Bravais lattice structure is not restrictive such that the line defect may be a row of defects arrayed along any arbitrary one of translational vectors.
  • FIG. 11 depicts a schematic view for illustrating the structure of a line defect in a two-dimensional Bravais lattice.
  • lattice points of a hexagonal lattice and basic translational vectors a 1 and a 2 ( 89 and 90 of FIG. 11 ).
  • dielectric pillars 88 contained in a line defect, are arrayed in a row along any of the translational vectors.
  • FIG. 11 shows a case where the basic translational vector of dielectric pillars, contained in the line defect, is given by 2a 1 +a 2 .
  • FIG. 2 depicts a cross-sectional view of a high refractive index material of an optical control device (element), which has a line-defect waveguide provided in a columnar-type square-lattice photonic crystal.
  • the cross-sectional view shows the material from a direction perpendicular to the lattice plane.
  • the optical control device of Example 1 of the present invention is an optical delay element comprised of a pillar-type square-lattice photonic crystal that has a multiplicity of dielectric (circular) columns with a finite height.
  • the photonic crystal includes a line-defect waveguide.
  • the optical control device 1 includes a first line-defect waveguide 5 , a second line-defect waveguide 11 and a third line-defect waveguide 8 .
  • the second line-defect waveguide, a line-defect waveguide provided in the square-lattice photonic crystal is provided with dielectric columns thinner than the dielectric columns of the first line-defect waveguide 5 .
  • the third line-defect waveguide 8 is a line-defect waveguide in which the thickness of the dielectric columns is varied gradually from that of the dielectric columns in the first line-defect waveguide to those of the dielectric pillars in the second line-defect waveguide along the wave guiding direction of the waveguide.
  • the optical control device also includes a set of the first line-defect waveguide 5 , third line-defect waveguide 8 and the second line-defect waveguide 11 , connected together in this order so that the thicknesses of the dielectric pillars will vary continuously (consecutively) in this order.
  • Both the first line-defect waveguide 5 and the second line-defect waveguide 11 may be implemented to provide for a low group velocity and group velocity dispersions of opposite polarities with respect to the same wavelength.
  • the dielectric pillars of the second line-defect waveguide 11 are thinner than those of the first line-defect waveguide 5 .
  • the wavelength range of the wave guiding mode of the second line-defect waveguide 11 is shifted to the side of a shorter wavelength than that of the wave guide mode of the first line-defect waveguide 5 .
  • the group velocity dispersion exhibits ordinary dispersion (with a negative value) on the short wavelength side of the wave guiding mode, while exhibiting extraordinary dispersion (with a positive value) on its long wavelength side.
  • the first line-defect waveguide and the second line-defect waveguide to exhibit ordinary dispersion and extraordinary dispersion, respectively. Since positive and negative values of the group velocity dispersion of the first line-defect waveguide 5 and the second line-defect waveguide 11 cancel each other, it is possible with the optical delay element of FIG. 2 to eliminate (cancel out) the group velocity dispersion.
  • the values of the group velocity dispersion are proportional to the length along the waveguide direction of the waveguide.
  • an optical delay element giving a group velocity dispersion either of a positive or negative value as an optical delay element of FIG. 2 on the whole.
  • the light guided in the first line-defect waveguide 5 and that guided in the second line-defect waveguide 11 are guided under confinement in the vicinity of the line defects. It is observed that the manner of spread (distribution) of the electromagnetic field of light as well as the intensity ratios of the electrical field and the magnetic field of light in the two waveguides differ from each other.
  • the third line-defect waveguide 8 is interposed between the first line-defect waveguide 5 and the second line-defect waveguide 11 to structurally-gently (adiabatically) couple together or interconnect the two waveguides. This should reduce reflection and/or loss of the guided light that might otherwise be produced between the first line-defect waveguide 5 and the second line-defect waveguide 11 .
  • the length of third line-defect waveguide 8 in the wave guiding direction is not less than five times a lattice period (pitch). This should sufficiently decrease the reflection and loss otherwise caused by the third line-defect waveguide 8 .
  • a silicon-on-insulator (Si on Insulator wafer, SOI) substrate may be used.
  • SOI substrate can be fabricated by forming a thin film of silicon dioxide, termed a buried oxide film, on a silicon substrate, and by forming thereon a thin silicon film termed a silicon active layer.
  • a photoresist is coated on the silicon active layer that forms an uppermost layer.
  • a pattern of an optical control device of a photonic crystal of FIG. 2 is formed thereon by a photolithographic technique.
  • the silicon active layer is etched vertically into pillars, using a fluorine-based silicon dry etching apparatus. After removing the photoresist, silicon pillars are buried by silicon dioxide or an optical resin that has the same refractive index as that of silicon dioxide. This completes the optical control device shown in FIG. 2 .
  • the cross-sectional shape of a dielectric pillar is circular, as an example.
  • the cross-sectional shape need not necessarily be circular.
  • the pillar shapes may be varied in a direction from the first line-defect waveguide to the second line-defect waveguide, instead of varying the pillar thicknesses, whereby it is possible to reverse the effect of the group velocity dispersion with a low group velocity being kept.
  • the optical control device of the present Example is an optical control device (optical delay element) comprised of a pillar-type square-lattice photonic crystal including a line-defect waveguide.
  • the photonic crystal includes a first line-defect waveguide 32 , a second line-defect waveguide 38 and a third line-defect waveguide 35 .
  • the cross-sectional shape of the dielectric pillars of the first line-defect waveguide is circular, while that of the dielectric pillars of the second line-defect waveguide is square.
  • the cross-sectional shapes of the dielectric pillars of the third line-defect waveguide are gradually varied from the circle to the square in a direction of the wave guiding path.
  • the optical control device is formed by interconnecting the first line-defect waveguide 32 , third line-defect waveguide 35 and the second line-defect waveguide 38 so that the cross-sectional shapes of the pillars are varied continuously (consecutively) in this order.
  • the cross-sectional shape is preferably varied between a square and a circle, as an example.
  • the length of the third line-defect waveguide 35 along the wave guiding direction is preferably not less than five times a lattice period (pitch). It is then possible to reduce reflections and/or loss on an interface between the first and third line-defect waveguides ( 32 , 35 ), oil an interface between the second and third line-defect waveguides ( 35 , 38 ) or in the third line-defect waveguide 35 .
  • Example 2 The method for manufacturing of Example 2 is basically the same as that of Example 1.
  • An electron beam photoresist is coated on a SOI substrate, which has a 1- ⁇ m-thick silicon active layer, by using a spin coater, and a pattern of FIG. 5 is written by using an electron-beam exposure device (direct writer).
  • the lattice period is 0.4 ⁇ m, for example.
  • the diameter of a column not contained in a line defect in the first line-defect waveguide 32 is 0.24 ⁇ m, while that of pillars contained in the line defect is 0.16 ⁇ m, for example.
  • a square pillar, not contained in a line defect in the second line-defect waveguide 38 has a 0.24- ⁇ m-long side, while square pillars, contained in the line defect, have a 0.1- ⁇ m-long side.
  • a silicon active layer is vertically etched by using a dry etching apparatus with a gas mixture of sulfur hexafluoride and quadro carbon octafluoride. After removing the photoresist with organic solvent, silicon dioxide is deposited using a thermal CVD apparatus. Based on the above-described manufacturing method, the optical control device, shown in FIG. 5 , may be fabricated.
  • a small-sized optical delay element (optical control device or element), suited for high speed signal processing, according to the present invention, may be integrated as one element in an optical integrated circuit.
  • the present invention contributes to improving the integration degree and to realization of a broader range of application of the optical integrated circuit.

Abstract

There is provided an optical control device including a plurality of line-defect waveguides provided in a photonic crystal; each line-defect waveguide including a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice. The optical control device comprises: a first line-defect waveguide; a second line-defect waveguide provided with the dielectric pillars having a thickness different from that of the dielectric pillars of the first line-defect waveguide; and a third line-defect waveguide arranged between the first and second line-defect waveguides and provided with the dielectric pillars whose thicknesses are gradually varied from those of the dielectric pillars of the first line-defect waveguide to those of the dielectric pillars of the second line-defect waveguide along a wave guiding direction.

Description

  • The present application is the National Phase of PCT/JP2008/050192, filed Jan. 10, 2008, which claims priority rights based on the Japanese Patent Application 2007-002634, filed in Japan on Jan. 10, 2007. The entire disclosure of this patent application of the earlier filing date is to be incorporated herein by reference thereto.
  • TECHNICAL FIELD
  • This invention relates to an optical control device and, more particularly, to an optical control device usable for an optical delay element for use in an optical integrated circuit.
  • BACKGROUND ART
  • Recently, attention is directed to application of a photonic crystal to an optical integrated circuit. For example, a device for changing a spot size of light guided by a light waveguide is disclosed in Patent Document 1, while an optical control device that has a dispersion controlling effect is disclosed in Patent Document 2.
  • Patent Document 1: JP Patent Kokai JP-A-2003-240985
  • Patent Document 2: JP Patent Kokai JP-A-2005-274844
  • The disclosures of the Patent Documents 1 and 2 are to be incorporated herein by reference thereto. The following is an analysis on the related art according to the present invention. Nowadays, there is raised a demand for a technique for implementing an integrated circuit of optical components, such as a transistor integrated circuit. In the current state of the art, an optical fiber, as a waveguide, and a variety of optical components, such as a light switch, a wavelength filter or a 3 dB coupler, as individual optical components, are interconnected to form an optical circuit. If these optical components could be integrated on a small chip, it would be possible to reduce the circuit volume, power consumption and the manufacturing cost significantly.
  • A large variety of techniques for implementing optical integrated circuits have so far been developed. In particular, photonic crystals are stirring up notice as being a technique having a potential capability of reducing the size and the power consumption per unit performance of an optical device fabricated on a substrate to one hundredth or even to one ten-thousandth.
  • In a broad sense of the term, a photonic crystal is a generic name of structures the refractive index of which is caused to vary periodically. Although photonic crystals are used in general for an electromagnetic wave, they are so named because they were inherently devised for optical use and also because they were endowed with a periodic structure like that of a crystal.
  • The photonic crystals exhibit a wide variety of optical features, based on the periodicity of their refractive index. Their most representative feature is the photonic band gap (PBG). As periodic changes in the refractive index of a photonic crystal are increased, the light of a particular frequency band (or a wavelength band) ceases to be able to be propagated through the photonic crystal. If the light frequency and the wave number (, or the amplitude of wave vector in a certain direction) of light are assigned to the ordinate and abscissa axes, respectively, and the relationship between the frequency and the wave number of light propagated through the photonic crystal is plotted, we obtain a diagram termed a dispersion relationship diagram or a photonic band diagram. In this photonic band diagram, the frequency range in which plots are present in succession and distributed as a curve is termed a band. The light that cannot be propagated through the photonic crystal has a frequency that is located intermediate between neighboring bands, that is, in a gap between the neighboring bands. The forbidden band, through which light cannot be propagated, is termed a photonic band gap (PBG).
  • If there is a defect in the photonic crystal that might disturb periodicity of the refractive index distribution of the photonic crystal, the light at a frequency falling within the PBG is confined in the vicinity of the defect. In this case, only the light at a particular frequency corresponding to the size of the defect can be confined, with the photonic crystal functioning as an optical resonator. Hence, the photonic crystal may be used as a frequency filter or a wavelength filter.
  • If miniscule defects are arrayed within the photonic crystal in succession in a row to form a line defect, even the light having the frequency within the PBG can be propagated along the defect, while the light is confined in the vicinity of the line defect. It may thus be seen that the line defect of the photonic crystal plays the role of a waveguide. This waveguide may be called a line-defect waveguide.
  • If a filter and a waveguide can be implemented, a light modulator or a light switch may be constructed by solely the waveguide or by the waveguide and the filter in combination.
  • It is thus possible to arrange principal optical functional components in a photonic crystal and to interconnect the components to construct an optical circuit. Hence, the photonic crystal is expected to be used as a platform for the optical integrated circuit.
  • From the perspective of manufacture, a photonic crystal desirably has a two-dimensional periodicity. If it is attempted to utilize the effect of the PBG, such as light confining effect, the photonic crystal must have three-dimensional periodicity in three perpendicular directions of x, y and z. However, fabrication process for a three-dimensional periodic structure is complex and hence is expensive in manufacture. For this reason, a two-dimensional photonic crystal, having a two-dimensional periodicity in a substrate surface and having a finite size along the direction perpendicular to the substrate surface, that is, along the direction of substrate thickness, is often used. In such case, light confinement along its thickness in a line-defect waveguide or in a point defect resonator is secured not by the PGG effect, but rather by total internal reflection caused by difference in the refractive index.
  • Strictly speaking, the optical characteristic of the two-dimensional photonic crystal having a finite thickness is not perfectly coincident with that of a two-dimensional photonic crystal having an infinite thickness, that is, a crystal that is uniform along its thickness. However, if the refractive index distribution along the direction of thickness of the two-dimensional photonic crystal having a finite thickness exhibits mirror symmetry (, or reflection symmetry) within a structural region where light is propagated, the optical characteristic of the two-dimensional photonic crystal having the finite thickness is roughly coincident with that of the two-dimensional photonic crystal having an infinite thickness. Prediction of the operation of a device of a photonic crystal with infinite thickness, that is, a device of the two-dimensional photonic crystal uniform along its thickness, is easier than that for which a finite thickness is taken into account. Hence, device implementation may be facilitated by exploiting the two-dimensional photonic crystal having refractive index distribution with the mirror symmetry.
  • Among a number of examples of a concrete structure of the two-dimensional photonic crystal having a finite thickness, thus far implemented, there are a hole-type photonic crystal and a pillar-type photonic crystal. In particular, a line-defect waveguide in the latter type crystal, that is, the pillar-type photonic crystal, is superior inter alia in the wave guiding characteristic.
  • FIG. 1 depicts a perspective view of a typical structure of a pillar-type photonic crystal with a finite thickness. Referring to FIG. 1, a multiplicity of pillars 2 with a finite height, made of a dielectric material, is arrayed in a square lattice pattern in a background medium 1. The dielectric material of the pillars has a dielectric constant higher than that of the background medium. By the way, the hole-type photonic crystal has a structure such as, in the structure shown in FIG. 1, the background medium 1 is made of a high dielectric constant material and the pillars 2 (columnar-shaped structures) are made of a low dielectric constant material. In a columnar-type square-lattice photonic crystal with a finite thickness, a line-defect waveguide can be formed by providing a row of dielectric pillars 3 as a line defect, a diameter of the pillars in the row, for example, being smaller than that of the pillars that make up otherwise perfect original crystal. In this case, the row of the columns of the line defect, is equivalent to a core in a waveguide that confines light by total internal reflection, such as an optical fiber, while the lattice(s) formed by pillars, disposed on each side of the row of pillars of the line defect, is(are) equivalent to a cladding.
  • In general, dielectric pillars in a photonic crystal are not limited to (circular) columns, and can be in any shape. It should be noted that a given dielectric pillar being ‘thicker’ or ‘thinner’ than other pillars means that the pillar in question is respectively larger or smaller in cross-sectional area than the others. In the present specification, the ‘dielectric pillar’ is defined as a pillar that has a dielectric constant, and encompasses air or vacuum, too.
  • The line-defect waveguide features a small group velocity and hence may be used as an optical delay element. In addition, the group velocity being small increases time of interaction between the guided light and the crystal material, as a result of which the effect of the interaction can be enhanced to a sufficient degree even if the waveguide is short. In other words, the effect of interaction per unit length is increased. Thus, with the line-defect waveguide, non-linear effects can efficiently be derived.
  • As for the line-defect waveguide of the pillar-type square-lattice photonic crystal, the group velocity of the guided light can be as small as one-twentieth to one-hundredth the speed of light in vacuum, as an example. Thus, even a short waveguide, can provide long delay time and hence a strong interaction with the material.
  • However, with this kind of waveguide that gives small group velocity of light, it is often experienced that the group velocity of the guided light is varied according to the light wavelength. Such wavelength-dependent variation in the group velocity is termed the ‘group velocity dispersion’. The line-defect waveguide of the columnar square-lattice photonic crystal does exhibit the group velocity dispersion. Thus, if line-defect waveguide of the columnar square-lattice photonic crystal guides an optical signal spanning a non-negligible range of wavelength, such as ultra-high speed optical signal, a problem may be that the signal waveform becomes collapsed (or deformed) after passing through the waveguide.
  • Patent Document 2 discloses an optical control device that compensates for the group velocity dispersion. However, the optical control device disclosed therein is provided with a structure formed by directly interconnecting a plurality of photonic crystals having different values of group velocity dispersion, raising a problem that a loss due to reflection at a connection interface may be produced.
  • It is therefore an object of the present invention to provide an optical delay element making use of a line-defect waveguide of a square-lattice photonic crystal in which, by reducing the effect of the group velocity dispersion, long delay time and the low group velocity dispersion are rendered compatible to each other to allow for coping with an ultra high speed signal. The square-lattice photonic crystal may also be a photonic crystal of an arbitrary two-dimensional Bravais lattice.
  • It is another object of the present invention to reduce the size of the optical delay element to improve the integration degree of the optical integrated circuit.
  • It is a further object of the present invention to reduce the effect of reflection in compensating for the group velocity dispersion.
  • In a first aspect of the present invention, there is provided an optical control device including a plurality of line-defect waveguides provided in a photonic crystal, in which each line-defect waveguide includes a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice. The optical control device comprises: a first line-defect waveguide; a second line-defect waveguide provided with the dielectric pillars having a thickness (cross-sectional area) different from that of the dielectric pillars of the first line-defect waveguide; and a third line-defect waveguide. The third line-defect waveguide is arranged between the first and second line-defect waveguides and provided with the dielectric pillars whose cross sectional areas are gradually varied from those of the dielectric pillars of the first line-defect waveguide to those of the dielectric pillars of the second line-defect waveguide along a wave guiding direction.
  • In a second aspect of the present invention, there is provided an optical control device including a plurality of line-defect waveguides provided in a photonic crystal, in which each line-defect waveguide includes a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice. The optical control device comprises: a first line-defect waveguide; a second line-defect waveguide provided with dielectric pillars having cross-sectional shapes different from those of the dielectric pillars of the first line-defect waveguide; and a third line-defect waveguide. The third line-defect waveguide is arranged between the first and second line-defect waveguides and provided with the dielectric pillars whose cross-sectional shapes are gradually varied from those of the dielectric pillars of the first line-defect waveguide to those of the dielectric pillars of the second line-defect waveguide in the course from the first line-defect waveguide towards the second line-defect waveguide along the wave guiding direction.
  • In a third aspect of the present invention, there is provided an optical control device including a plurality of line-defect waveguides provided in a photonic crystal, in which each line-defect waveguide including a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice. The optical control device comprises: a first line-defect waveguide; a second line-defect waveguide provided with the dielectric pillars that have lattice-point intervals (that is, local lattice constants) different from those of the dielectric pillars of the first line-defect waveguide; and a third line-defect waveguide. The third line-defect waveguide is arranged between the first and second line-defect waveguides and provided with dielectric pillars whose lattice-point intervals are gradually varied from those of the dielectric pillars of the first line-defect waveguide to those of the dielectric pillars of the second line-defect waveguide in the course from the first line-defect waveguide towards the second line-defect waveguide, along the wave guiding direction.
  • In a first formulation of the optical control device according to the first aspect, a further line-defect waveguide, whose dielectric pillars have cross-sectional areas gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of the optical control device including the first to third line-defect waveguides.
  • In a second formulation of the optical control device according to the first aspect, the length along the wave guiding direction of the third line-defect waveguide is not less than five times a lattice pitch (lattice constant).
  • In a third formulation of the optical control device according to the first aspect, the dielectric pillars contained in the line defect of the first line-defect waveguide and the dielectric pillars not contained in the line defect are thicker (larger in cross section) than the that of the dielectric pillars contained in a line defect of the second line-defect waveguide and dielectric pillars not contained in the line defect. Or, the dielectric pillars contained in the line defect of the second line-defect waveguide and the dielectric pillars not contained in the line defect are thicker than that of the dielectric pillars contained in a line defect of the first line-defect waveguide and dielectric pillars not contained in the line defect.
  • In a fourth aspect of the optical control device according to the first aspect, thicknesses (cross-sectional areas) of the dielectric pillars contained in the line defect of the first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of the first and second line-defect waveguides, and the thicknesses (cross-sectional areas) of dielectric pillars not contained in the line defect(s) of the first and second line-defect waveguides are equal.
  • In a fifth formulation of the optical control device according to the first aspect, thicknesses (cross-sectional areas) of the dielectric pillars not contained in the line defect of the first and second line-defect waveguide differ only with respect to those of the dielectric pillars not contained in the line defect(s) of the first and second line-defect waveguides, and the thicknesses (cross-sectional areas) of the dielectric pillars contained in the line defect(s) of the first and second line-defect waveguides are equal.
  • In a sixth formulation of the optical control device according to the first aspect, the thicknesses (cross-sectional areas) of the dielectric pillars contained in the line defects of the first and second line-defect waveguides gradually change in opposite directions between the dielectric pillars not contained in the line defect of the first and second line-defect waveguides and the dielectric pillars contained in the line defect of the first and second line-defect waveguides.
  • In a seventh formulation of the optical control device according to the second aspect, a further line-defect waveguide, whose dielectric pillars have cross-sectional shapes gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of the optical control device including the first to third line-defect waveguides.
  • In an eighth formulation of the optical control device according to the second aspect, the length along the wave guiding direction of the third line-defect waveguide is not less than five lattice periods.
  • In a ninth formulation of the optical control device according to the second aspect, the cross-sectional shapes of the dielectric pillars contained in the line defect of the first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of the first and second line-defect waveguides, and the cross-sectional shapes of dielectric pillars not contained in the line defect of the first and second line-defect waveguides are equal.
  • In a tenth formulation of the optical control device according to the second aspect, the cross-sectional shapes of the dielectric pillars not contained in the line defect of the first and second line-defect waveguides differ only with respect to those of dielectric pillars not contained in the line defect of the first and second line-defect waveguides, and the cross-sectional shapes of the dielectric pillars contained in the line defects of the first and second line-defect waveguides are equal.
  • In an eleventh formulation of the optical control device according to the second aspect, the cross-sectional shapes of the dielectric pillars contained in the line defects in the first and second line-defect waveguides are equal to the cross-sectional shapes of the dielectric pillars not contained in the line defects in the first and second line-defect waveguides.
  • In a twelfth formulation of the optical control device according to the second aspect, in at least one of the first and second line-defect waveguides, the cross-sectional shapes of the dielectric pillars contained in the line defects are different from the cross-sectional shapes of dielectric pillars not contained in the line defects.
  • In a thirteenth formulation of the optical control device according to the third aspect, a further line-defect waveguide, whose lattice-point intervals are gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of the optical control device including the first to third line-defect waveguides.
  • In a fourteenth formulation of the optical control device according to the third aspect, the length along the wave guiding direction of the third line-defect waveguide is not less than five times a lattice period (pitch).
  • In a fifteenth formulation of the optical control device according to the third aspect, the lattice-point intervals of the dielectric pillars contained in the line defect of the first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of the first and second line-defect waveguides, and the lattice-point intervals of dielectric pillars not contained in the line defect of the first and second line-defect waveguides are equal.
  • In a sixteenth formulation of the optical control device according to the third aspect, only lattice-point intervals of the dielectric pillars not contained in the line defect of said first and second line-defect waveguides differ, and wherein the lattice point intervals of the dielectric pillars contained in the line defect(s) of said first and second line-defect waveguides are equal.
  • In a seventeenth formulation of the optical control device according to the third aspect, in the first and second line-defect waveguides, the lattice-point intervals of the dielectric pillars contained in the line defects are equal to the lattice-point intervals of the dielectric pillars not contained in the line defects.
  • In an eighteenth formulation of the optical control device according to the third aspect, in at least one of the first and second line waveguides, lattice-point intervals of the dielectric pillars contained in the line defect are different from lattice-point intervals of the dielectric pillars not contained in the line defects.
  • In a nineteenth formulation of the optical control device according to any of the first to third aspects, the dielectric pillars are formed of a material higher in dielectric constant than a background medium.
  • In a twentieth formulation of the optical control device according to any of the first to third aspects, the dielectric pillar(s) is(are) a hole(s) provided in a high-refractive-index material.
  • In a twenty-first formulation of the optical control device according to any one of the first to third aspects, the two-dimensional Bravais lattice is a square lattice.
  • With the optical control device of the present invention, group velocity dispersion can be compensated while delay is kept long for application as an optical delay element. Hence, the delay element of the present invention may be applied even for an ultra-high speed signal spanning non-negligible range of wavelength. It is observed that, since the adverse effect of the waveform distortion due to group velocity dispersion can be suppressed, the optical control device (optical delay element) can be extended in its length along the wave guiding direction to significantly protract the delay time.
  • Also, a wavelength range in which group velocity was smaller but, originally, group velocity dispersion had been too large can be made available, so that optical delay can be achieved with a device with a waveguide shorter than those in conventional devices. Hence, the optical delay element can be reduced in size.
  • Additionally, with the optical control device of the present invention, reflection of light may be suppressed by interconnecting two different material types differing in the group velocity dispersion through a line-defect waveguide provided with a gradually varying structure.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a perspective view showing a pillar-shaped photonic crystal having a finite thickness.
  • FIG. 2 is a cross-sectional view showing an optical control device according to a first exemplary embodiment.
  • FIG. 3 is a cross-sectional view showing an optical control device according to the first exemplary embodiment.
  • FIG. 4 is a cross-sectional view showing an optical control device according to the first exemplary embodiment.
  • FIG. 5 is a cross-sectional view showing an optical control device according to a second exemplary embodiment.
  • FIG. 6 is a cross-sectional view showing an optical control device according to the second exemplary embodiment.
  • FIG. 7 is a cross-sectional view showing an optical control device according to the second exemplary embodiment.
  • FIG. 8 is a cross-sectional view showing an optical control device according to a third exemplary embodiment.
  • FIG. 9 is a cross-sectional view showing an optical control device according to the third exemplary embodiment.
  • FIG. 10 is a cross-sectional view showing an optical control device according to the third exemplary embodiment.
  • FIG. 11 is a schematic view for illustrating a structure of a line defect in a two-dimensional Bravais lattice.
  • EXPLANATION OF SYMBOLS
    • 1 background medium (or high dielectric constant material)
    • 2, 6, 9, 12, 15, 18, 21, 24, 27, 30, 33, 36, 39, 42, 45, 48, 51, 54, 57, 60, 63, 66, 69, 72, 75, 79, 82, 85 dielectric pillars (or void holes) not contained in line defects
    • 3, 7, 10, 13, 16, 19, 22, 25, 28, 31, 34, 37, 40, 43, 46, 49, 52, 55, 58, 61, 64, 67, 70, 73, 76, 80, 83, 86, 88 dielectric pillars contained in line defects
    • 5, 14, 23, 32, 41, 50, 59, 68, 78 first line-defect waveguide paths
    • 11, 20, 29, 38, 47, 56, 65, 74, 84 second line-defect waveguide paths
    • 8, 17, 26, 35, 44, 53, 62, 71, 81 third line-defect waveguide paths
    • 89 basic translational vector a1 of one (hexagonal lattice) of two-dimensional Bravais lattice
    • 90 basic translational vector a2 of one (hexagonal lattice) of two-dimensional Bravais lattice
    • 91 basic translational vector of a line defect
    PREFERRED MODES Exemplary Embodiment 1
  • An optical control device according to a first exemplary embodiment of the present invention is now described with reference to the drawings.
  • Referring to FIG. 2, an optical control device according to a preferred first exemplary embodiment of the present invention, usable as an optical delay element, is comprised of a pillar-shaped square-lattice photonic crystal. This photonic crystal includes a multiplicity of pillars of a dielectric material of a finite height in which there is provided a line-defect waveguide. The optical control device includes a first line-defect waveguide 5, a second line-defect waveguide 11 and a third line-defect waveguide 8. The second line-defect waveguide 11, as a line-defect waveguide in a square-lattice photonic crystal, is provided with a multiplicity of pillars thinner than the dielectric pillars of the first line-defect waveguide. The third line-defect waveguide 8 is provided with dielectric pillars, the thickness (cross-sectional area) of which is gradually varied from the thickness of the pillars of the first line-defect waveguide to that of the pillars of the second line-defect waveguide along the wave guiding direction of the waveguides. The optical control device also includes a set of waveguides composed of the first line-defect waveguide 5, second line-defect waveguide 11 and the third line-defect waveguide 8, in which the thicknesses of the dielectric pillars are varied continuously (consecutively) in this sequence.
  • Preferably, the group velocity dispersion of the first line-defect waveguide 5 is, opposite to that of the second line-defect waveguide 11. For example, the first line-defect waveguide 5 exhibits ordinary dispersion such that light with a shorter wavelength is guided at a speed lower than that of light with a longer wavelength. Conversely, the second line-defect waveguide 11 exhibits extraordinary dispersion such that light with a shorter wavelength is guided at a higher speed than that of light with a longer wavelength. Thus, on interconnecting the first line-defect waveguide 5 and the second line-defect waveguide 11, the two group velocity dispersions cancel each other on the whole.
  • However, the manner of spreading (distribution) of the electromagnetic field of light guided through the first line-defect waveguide 5 differs from that of light guided through the second line-defect waveguide 11. Thus, if the two waveguides are simply joined to each other, reflection or radiation of the guided light occurs at the joint.
  • The third line-defect waveguide 8 overcomes this problem. The third line-defect waveguide 8 undergoes gentle (or step-like) structural transitions between the first line-defect waveguide 5 and the second line-defect waveguide 11. Hence, the distribution of electromagnetic fields of the guided light also undergoes gentle (i.e., gradual) changes between the first line-defect waveguide 5 and the second line-defect waveguide 11, such that there scarcely occurs reflection or radiation of the guided light in the transition area.
  • If the optical control device is used as an optical delay element, the waveguides, connected at input and output ends of the optical control device, are connected to waveguides different from the waveguides that compose the optical control device in order to provide for high speed propagation of the light signal. It is preferred in such case to provide a line-defect waveguide, the pillar thicknesses of which are gradually varied, on one side or each side of the optical control device, in order to provide for continuous optical coupling of the optical control device to the high speed waveguides.
  • The third line-defect waveguide 8 has a function of achieving continuous optical coupling between the first line-defect waveguide 5 and the second line-defect waveguide 11. In order for this function to be in full play to suppress reflection or radiation in the third line-defect waveguide 8 to a negligible value, the third line-defect waveguide 8 is preferably not less than 5 periods (pitch) of the lattice in the wave guide direction.
  • Referring to FIG. 2, comparison of the thicknesses of the dielectric pillars of the first line-defect waveguide 5 to those of the dielectric pillars of the second line-defect waveguide 11 indicates that dielectric pillars 7 contained in the line-defect of the first line-defect waveguide 5 are thicker than dielectric pillars 13 contained in the line defect of the second line-defect waveguide, and that dielectric pillars 6 not contained in the line defect of the first line-defect waveguide are thicker than dielectric pillars 12 not contained in the line defect of the second line-defect waveguide. In such structure, the thickness ratio of the dielectric pillars 7 of the first line-defect waveguide 5 and the dielectric pillars 13 of the second line-defect waveguide 11 can be set so as to be equal or approximately equal to the thickness ratio of the dielectric pillars 6 not contained in the line defect of the first line-defect waveguide 5 and the dielectric pillars 12 not contained in the line defect of the second line-defect waveguide 11. This thickness ratio is correlated with the intensity of confinement of guided light to the vicinity of the line defect. Thus, with the optical control device, shown in FIG. 2, the spread of the guided light in the vicinity of the line defect may be kept to be substantially equal throughout the entire device. The structure of the optical control device, shown in FIG. 2, is therefore effective when it is desired to maintain the width of the line-defect waveguide to a certain value fixed according to manufacturing constraints.
  • As shown in FIG. 3, the thicknesses of the dielectric pillars of a first line-defect waveguide 14 may be equal to those of the dielectric pillars of a second line-defect waveguide 20 except the thicknesses of the dielectric pillars 16 and 22 of the respective line defects which are different. If only the thicknesses of the dielectric pillars 16, 22 of the respective line defects are varied, the advantages of protracting the delay time and canceling out the group velocity dispersion, both of which are the features as the optical delay elements, are approximately the same as in the case of changing not only the thicknesses of the dielectric pillars 16, 22 contained in the line defects from each other but also changing those of the dielectric pillars 15, 21 not contained in the line defects from each other. It is observed, however, that changing only the thicknesses of the dielectric pillars contained in the line defects give rise to a merit that implementation of the third line-defect waveguide 17 may be facilitated since it is then only necessary to change the thicknesses of the dielectric pillars 19 in the line-defect row.
  • As shown in FIG. 4, on the other hand, only the thicknesses of the dielectric pillars 24 not contained in the line defect of a first line-defect waveguide 23 may differ from those of the dielectric pillars 30 not contained in the line defect of a second line-defect waveguide 29. The optical control device of this construction has a merit that, since the thicknesses of the dielectric pillars 25, 28 or 31, contained in the line defects where the energy of the guided light is concentrated, are unchanged, a third line-defect waveguide 26 is relatively free from losses otherwise caused by reflection or radiation.
  • The above-described three structures pertinent to the thicknesses of the dielectric pillars, shown in FIGS. 2 to 4, may, of course, be present together in a mixed configuration in one structure.
  • Also, the dielectric pillars contained in the line defect of the first line-defect waveguide may be thicker in thickness than those contained in the line defect of the second line-defect waveguide, while the dielectric pillars not contained in the line defect of the first line-defect waveguide may be thinner in thickness than those in the line defect of the second line-defect waveguide.
  • Exemplary Embodiment 2
  • In a second exemplary embodiment of the present invention, a light control element has a line-defect waveguide in a pillar-shaped square-lattice photonic crystal provided with a multiplicity of dielectric pillars that have a finite height, as shown in FIG. 5. The optical control device includes a first line-defect waveguide 32, a second line-defect waveguide 38 and a third line-defect waveguide 35. The second line-defect waveguide 38 is a line-defect waveguide in a square-lattice photonic crystal, which includes dielectric pillars 39, 40 differing in cross-sectional shape from dielectric pillars 33, 34 of the first line-defect waveguide 32. The third line-defect waveguide 35 includes dielectric pillars 36, 37. The cross-sectional shapes of the dielectric pillars 36 is(are) gradually varied from the cross-sectional shapes of the dielectric pillars 33 of the first line-defect waveguide 32 to those of the dielectric pillars 39 of the second line-defect waveguide 38 along the wave guiding direction of the waveguide. Similarly, the cross-sectional shapes of the dielectric pillars 37 are gradually varied from the cross-sectional shapes of the dielectric pillars 34 of the first line-defect waveguide 32 to those of the dielectric pillars 40 of the second line-defect waveguide 35 along the wave guiding direction of the waveguide. The optical control device includes a set of waveguides in which the first line-defect waveguide 32, the third line-defect waveguide 35 and second line-defect waveguide 38 are joined together in this order, the cross-sectional shapes of the dielectric pillars being changed continuously (consecutively).
  • The second exemplary embodiment corresponds to what is constructed by substituting changes in the cross-sectional shapes for changes in thicknesses of the dielectric pillars of the first exemplary embodiment. The first exemplary embodiment is suited for suppressing the group velocity dispersion of the optical control device, operating as an optical delay element, to substantially zero. However, the first exemplary embodiment leaves something to be desired in that group velocity dispersion may not be suppressed over a broad frequency range in its entirety. On the other hand, although the second exemplary embodiment is slightly inferior to the first exemplary embodiment in reducing the group velocity dispersion to approximately zero; however, with the second exemplary embodiment, the wavelength dependency of the group velocity dispersion of the entire optical control device can be finely (precisely) controlled over a wide frequency range by varying the cross-sectional shapes of the dielectric pillars. Hence, the structure of the optical control device of the second exemplary embodiment is effective in the case where it is desired to endow the light transmitted through the optical control device with specified group velocity dispersion.
  • For coupling to waveguides with different characteristics, the present optical control device may be provided on its one side or on each side with a line-defect waveguide having the dielectric pillars whose cross-sectional shapes are varied gradually (stepwise).
  • To sufficiently suppress internal reflection or radiation, the third line-defect waveguide is preferably not shorter than five times a period (pitch) along the wave guiding direction.
  • As shown in FIG. 6, only the cross-sectional shapes of dielectric pillars 43 contained in a line defect of a first line-defect waveguide 41 may be different from those of dielectric pillars 49 contained in a line defect of a second line-defect waveguide 47. This structure has an advantage that implementation may be facilitated.
  • As shown in FIG. 7, only the cross-sectional shapes of dielectric pillars 51 not contained in its line defect of a first line-defect waveguide 50 may be different from those of dielectric pillars 57 not contained in its line defect of a second line-defect waveguide 56. This structure has an advantage that reflection or radiation in a third line-defect waveguide 53 may be suppressed more effectively than with the structure shown in FIG. 5 or 6.
  • The basic structure of the first and second line-defect waveguides is a structure shown in FIG. 5, in which, in each of the first and second line-defect waveguides, the cross-sectional shapes of the dielectric pillars contained in the line defect(s) are the same as those of the dielectric pillars not contained in the line defects.
  • However, if, with this basic structure (FIG. 5), the group velocity dispersion cannot be controlled with sufficient accuracy, the cross-sectional shapes of the dielectric pillars contained in the line defect may be different from those of the dielectric pillars not contained in the line defect in at least one of the first and second line-defect waveguides (FIGS. 6 and 7).
  • Exemplary Embodiment 3
  • A third exemplary embodiment of the present invention is directed to an optical control device, in particular an optical delay element which is comprised of a pillar-type square-lattice photonic crystal that has dielectric pillars with a finite height, and also has a line defect, as shown in FIG. 8. The optical control device includes a first line-defect waveguide 59, a second line-defect waveguide 65 and a third-line-defect waveguide 62. The second line-defect waveguide 65 is made up of dielectric pillars 66 and 67. The dielectric pillars 66 have lattice-point intervals, that is, local lattice constants, different from those of dielectric pillars 60 of the first line-defect waveguide 59, and the dielectric pillars 67 have lattice point intervals, that is, local lattice constants, different from those of dielectric pillars 61 of the first line-defect waveguide 59. The third line-defect waveguide 62 is interposed between the first line-defect waveguide 59 and the second line-defect waveguide 65, and is made up of dielectric pillars 63 and 64. The lattice point intervals of the dielectric pillars 63 are varied gradually from those of the first line-defect waveguide 59 to those of the second line-defect waveguide 65 in the course from the first line-defect waveguide 59 towards the second line-defect waveguide 65. In a similar manner, the lattice point intervals of dielectric pillars 64 are varied gradually from those of the first line-defect waveguide 59 to those of the second line-defect waveguide 65 in the course from the first line-defect waveguide 59 towards the second line-defect waveguide 65.
  • It should be noted that the ‘lattice point interval’ means a distance (interstice) between the centers of cross sections of a dielectric pillar of interest and a dielectric pillar adjacent thereto, while the ‘local lattice constant’ means a summation average of the all intervals between the centers of cross sections of a dielectric pillar of interest and the dielectric pillars adjacent thereto.
  • The present third exemplary embodiment corresponds to what is constructed by substituting variations in the lattice point intervals (local lattice constants) of dielectric pillars for variations in thicknesses (cross-sectional areas) of the dielectric pillars in the first exemplary embodiment. If the present third exemplary embodiment is used as an optical delay element, it is possible to realize substantially the same characteristic as that of the first exemplary embodiment with respect to controlling of the group velocity dispersion. The third exemplary embodiment may be said to differ from the first exemplary embodiment in that, since control of the positions of lattice points taken up by the dielectric pillars is easier than that of the thicknesses of the dielectric pillars, it is easier with the third exemplary embodiment to fabricate an optical control device conforming to design parameters.
  • With the present exemplary embodiment, a line-defect waveguide, the lattice point intervals of dielectric pillars of which are varied gradually along the wave guiding direction, may be provided on one or each side of the optical control device comprised of the first to third line-defect waveguides. It is thereby possible to provide for optical coupling of the optical control device to waveguides of different characteristics without producing reflections or radiations of the guided light.
  • With the present optical control device, the third line-defect waveguide 62 is preferably not shorter than five times a period along the wave guiding direction. It is thereby possible to suppress reflections or radiations in the third line-defect waveguide 8 to a substantially negligible value.
  • As shown in FIG. 9, the present optical control device may be implemented by a structure in which only the lattice point intervals of the dielectric pillars 70 contained in a line defect of a first line-defect waveguide differ from those of the dielectric pillars 76 contained in a line defect of a second line-defect waveguide. The dielectric pillars 69 and 75, not contained in the line defects, has the same stricture. FIG. 9 shows a concrete example structure for this case. That is, with this example stricture, the intervals of the dielectric pillars 70, 76, contained in the line defects, are constant, while those of the dielectric pillars 69, 75, not contained in the line defects, have the same value and constant. The lattices (points) of the dielectric pillars 69, not contained in the line defect of the first line-defect waveguide 68, are disposed close to both sides of the dielectric pillars 70 contained in the line defect of the first line-defect waveguide. The lattices (points) of the dielectric pillars 75, not contained in the line defect of the second line-defect waveguide 74, are disposed apart from both sides of the dielectric pillars 76 contained in the line defect of the second line-defect waveguide 74. In a third line-defect waveguide guide 71, the lattice points of the dielectric pillars 72, not contained in its line defect, are disposed gradually removed (more apart) from both sides of the dielectric pillars 73 contained in the line defect in a width-wise direction, that is, in a direction normal to the wave guiding direction and parallel to the plane of the two-dimensional lattice in the course of progressing from the first line-defect waveguide 68 towards the second line-defect waveguide 74. This means that only the lattice point intervals taken in the width-wise direction of line defect rows 70, 73, 76 are gradually widened along the wave guiding directions.
  • Conversely, a structure may be assumed in which only the lattice point intervals of dielectric pillars 79, not contained in the line defect of the first line-defect waveguide, are different from those of dielectric pillars 85 not contained in the line defect of the second line-defect waveguide, while those of dielectric pillars 80, 86, contained in the line defects of the first and second line-defect waveguides, are equal to one another. A concrete example structure for this case is shown in FIG. 10. That is, the optical control device has such a structure in which the lattice point intervals between the dielectric pillars 80, 86 of the line defects and dielectric pillars disposed closest to the line defects are constant, and in which the other lattice point intervals between the dielectric pillars are gradually increased in the width-wise direction, in the course of progressing from the first line-defect waveguide 78 towards the second line-defect waveguide 84, that is, in the direction perpendicular to the wave guiding direction and parallel to the two-dimensional lattice plane. It is only the lattice point intervals in the width-wise direction of the dielectric pillars 79, 85 not contained in the line defect rows that are widened in this case.
  • A further different structure of an optical control device may be provided as such a one in which the lattice-point intervals between the dielectric pillars contained in the line defect are equal to those between the dielectric pillars not contained in the line defect for each of the first and second line-defect waveguides.
  • A further different structure of an optical control device may be provided as one in which, in at least one of the first line-defect waveguide and the second line-defect waveguide, the lattice point intervals between dielectric pillars contained in the line defect differ from those between the dielectric pillars not contained in the line defect.
  • In the above description of the first to third exemplary embodiments, the dielectric pillars are formed of a material higher in dielectric constant than the background medium. Alternatively, the dielectric pillars may be formed of a material lower in dielectric constant than the background medium. In an exemplary case, the dielectric pillars is(are) a hole(s) (void) provided in a high dielectric constant material.
  • The line-defect waveguide of the pillar-shaped square lattice photonic crystal in each of the first to third exemplary embodiments may be formed so as to have low group velocity and different effects of group velocity dispersion. This is made possible by properly adjusting the thicknesses and/or shapes of the dielectric pillars provided in the lattice or the lattice point intervals. In particular, if it has been possible to form two or more waveguides so that these waveguides will have reverse group velocity dispersion effects, and if these waveguides may be interconnected via a gently changing structure, it is possible to reduce overall group velocity dispersion without causing reflection between the interconnected waveguides as well as to obtain prolonged optical delay time.
  • In the above description of the first to third exemplary embodiments, the crystal system of the two-dimensional lattice of the photonic crystal is assumed to be a square lattice. This is of course not restrictive such that any of two-dimensional Bravais lattice structures may be used in place of the square lattice.
  • As for the line defect, the direction of the basic translational vector in the Bravais lattice structure is not restrictive such that the line defect may be a row of defects arrayed along any arbitrary one of translational vectors.
  • FIG. 11 depicts a schematic view for illustrating the structure of a line defect in a two-dimensional Bravais lattice. In FIG. 11, there are shown lattice points of a hexagonal lattice and basic translational vectors a1 and a2 (89 and 90 of FIG. 11). In this case, it is sufficient that dielectric pillars 88, contained in a line defect, are arrayed in a row along any of the translational vectors. FIG. 11 shows a case where the basic translational vector of dielectric pillars, contained in the line defect, is given by 2a1+a2.
  • In the above description, the line defect is assumed to be arrayed in a single row for convenience of simplified explanation. It may, however, include multiple rows.
  • Example 1
  • Example 1 of the present invention is now described with reference to the drawings.
  • FIG. 2 depicts a cross-sectional view of a high refractive index material of an optical control device (element), which has a line-defect waveguide provided in a columnar-type square-lattice photonic crystal. The cross-sectional view shows the material from a direction perpendicular to the lattice plane.
  • Referring to FIG. 2, the optical control device of Example 1 of the present invention (optical delay element) is an optical delay element comprised of a pillar-type square-lattice photonic crystal that has a multiplicity of dielectric (circular) columns with a finite height. The photonic crystal includes a line-defect waveguide. The optical control device 1 includes a first line-defect waveguide 5, a second line-defect waveguide 11 and a third line-defect waveguide 8. The second line-defect waveguide, a line-defect waveguide provided in the square-lattice photonic crystal, is provided with dielectric columns thinner than the dielectric columns of the first line-defect waveguide 5. The third line-defect waveguide 8 is a line-defect waveguide in which the thickness of the dielectric columns is varied gradually from that of the dielectric columns in the first line-defect waveguide to those of the dielectric pillars in the second line-defect waveguide along the wave guiding direction of the waveguide. The optical control device also includes a set of the first line-defect waveguide 5, third line-defect waveguide 8 and the second line-defect waveguide 11, connected together in this order so that the thicknesses of the dielectric pillars will vary continuously (consecutively) in this order.
  • Both the first line-defect waveguide 5 and the second line-defect waveguide 11 may be implemented to provide for a low group velocity and group velocity dispersions of opposite polarities with respect to the same wavelength. With the pillar-type square-lattice photonic crystal, shown in FIG. 2, the dielectric pillars of the second line-defect waveguide 11 are thinner than those of the first line-defect waveguide 5. In such case, the wavelength range of the wave guiding mode of the second line-defect waveguide 11 is shifted to the side of a shorter wavelength than that of the wave guide mode of the first line-defect waveguide 5. Further, in a line-defect waveguide in which dielectric columns contained in the line defect are thinner than the surrounding dielectric columns, the group velocity dispersion exhibits ordinary dispersion (with a negative value) on the short wavelength side of the wave guiding mode, while exhibiting extraordinary dispersion (with a positive value) on its long wavelength side. Thus, in a wavelength range in which the wavelength range of the guided mode of the first line-defect waveguide 5 overlaps with that of the second line-defect waveguide 11, it is possible for the first line-defect waveguide and the second line-defect waveguide to exhibit ordinary dispersion and extraordinary dispersion, respectively. Since positive and negative values of the group velocity dispersion of the first line-defect waveguide 5 and the second line-defect waveguide 11 cancel each other, it is possible with the optical delay element of FIG. 2 to eliminate (cancel out) the group velocity dispersion.
  • The values of the group velocity dispersion are proportional to the length along the waveguide direction of the waveguide. Thus, by proper selection of the lengths of the first line-defect waveguide 5 and the second line-defect waveguide 11, it is also possible to manufacture an optical delay element giving a group velocity dispersion either of a positive or negative value as an optical delay element of FIG. 2 on the whole.
  • The light guided in the first line-defect waveguide 5 and that guided in the second line-defect waveguide 11 are guided under confinement in the vicinity of the line defects. It is observed that the manner of spread (distribution) of the electromagnetic field of light as well as the intensity ratios of the electrical field and the magnetic field of light in the two waveguides differ from each other. Hence, the third line-defect waveguide 8 is interposed between the first line-defect waveguide 5 and the second line-defect waveguide 11 to structurally-gently (adiabatically) couple together or interconnect the two waveguides. This should reduce reflection and/or loss of the guided light that might otherwise be produced between the first line-defect waveguide 5 and the second line-defect waveguide 11.
  • Preferably, the length of third line-defect waveguide 8 in the wave guiding direction is not less than five times a lattice period (pitch). This should sufficiently decrease the reflection and loss otherwise caused by the third line-defect waveguide 8.
  • The method for manufacturing the optical control device of Example 1 is now described.
  • For manufacture, a silicon-on-insulator (Si on Insulator wafer, SOI) substrate may be used. The SOI substrate can be fabricated by forming a thin film of silicon dioxide, termed a buried oxide film, on a silicon substrate, and by forming thereon a thin silicon film termed a silicon active layer.
  • A photoresist is coated on the silicon active layer that forms an uppermost layer. A pattern of an optical control device of a photonic crystal of FIG. 2 is formed thereon by a photolithographic technique. The silicon active layer is etched vertically into pillars, using a fluorine-based silicon dry etching apparatus. After removing the photoresist, silicon pillars are buried by silicon dioxide or an optical resin that has the same refractive index as that of silicon dioxide. This completes the optical control device shown in FIG. 2.
  • Example 2
  • An Example 2 is now described.
  • In Example 1 (FIG. 2), the cross-sectional shape of a dielectric pillar is circular, as an example. However, to achieve at the effect of the present invention, the cross-sectional shape need not necessarily be circular. In addition, the pillar shapes may be varied in a direction from the first line-defect waveguide to the second line-defect waveguide, instead of varying the pillar thicknesses, whereby it is possible to reverse the effect of the group velocity dispersion with a low group velocity being kept.
  • That is, referring to FIG. 5, the optical control device of the present Example is an optical control device (optical delay element) comprised of a pillar-type square-lattice photonic crystal including a line-defect waveguide. The photonic crystal includes a first line-defect waveguide 32, a second line-defect waveguide 38 and a third line-defect waveguide 35. The cross-sectional shape of the dielectric pillars of the first line-defect waveguide is circular, while that of the dielectric pillars of the second line-defect waveguide is square. The cross-sectional shapes of the dielectric pillars of the third line-defect waveguide are gradually varied from the circle to the square in a direction of the wave guiding path. Preferably, the optical control device is formed by interconnecting the first line-defect waveguide 32, third line-defect waveguide 35 and the second line-defect waveguide 38 so that the cross-sectional shapes of the pillars are varied continuously (consecutively) in this order.
  • From the perspective of ease in manufacture, the cross-sectional shape is preferably varied between a square and a circle, as an example.
  • The length of the third line-defect waveguide 35 along the wave guiding direction is preferably not less than five times a lattice period (pitch). It is then possible to reduce reflections and/or loss on an interface between the first and third line-defect waveguides (32, 35), oil an interface between the second and third line-defect waveguides (35, 38) or in the third line-defect waveguide 35.
  • The method for manufacturing of Example 2 is basically the same as that of Example 1.
  • An electron beam photoresist is coated on a SOI substrate, which has a 1-μm-thick silicon active layer, by using a spin coater, and a pattern of FIG. 5 is written by using an electron-beam exposure device (direct writer). The lattice period is 0.4 μm, for example. The diameter of a column not contained in a line defect in the first line-defect waveguide 32 is 0.24 μm, while that of pillars contained in the line defect is 0.16 μm, for example. A square pillar, not contained in a line defect in the second line-defect waveguide 38, has a 0.24-μm-long side, while square pillars, contained in the line defect, have a 0.1-μm-long side. A silicon active layer is vertically etched by using a dry etching apparatus with a gas mixture of sulfur hexafluoride and quadro carbon octafluoride. After removing the photoresist with organic solvent, silicon dioxide is deposited using a thermal CVD apparatus. Based on the above-described manufacturing method, the optical control device, shown in FIG. 5, may be fabricated.
  • INDUSTRIAL APPLICABILITY
  • A small-sized optical delay element (optical control device or element), suited for high speed signal processing, according to the present invention, may be integrated as one element in an optical integrated circuit. Hence, the present invention contributes to improving the integration degree and to realization of a broader range of application of the optical integrated circuit.
  • The particular exemplary embodiments or examples may be modified or adjusted within the gamut of the entire disclosure of the present invention, inclusive of claims, based on the fundamental technical concept of the invention. Further, variegated combinations or selections of the elements disclosed herein may be made within the framework of the claims.

Claims (21)

1. An optical control device including a plurality of line-defect waveguides provided in a photonic crystal; each line-defect waveguide including a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice; said optical control device comprising:
a first line-defect waveguide;
a second line-defect waveguide provided with the dielectric pillars having a thickness different from that of the dielectric pillars of said first line-defect waveguide; and
a third line-defect waveguide arranged between said first and second line-defect waveguides and provided with the dielectric pillars whose thicknesses are gradually varied from those of the dielectric pillars of said first line-defect waveguide to those of the dielectric pillars of said second line-defect waveguide along a wave guiding direction.
2. The optical control device according to claim 1, wherein a further line-defect waveguide, whose dielectric pillars have thicknesses gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of said optical control device including said first to third line-defect waveguides.
3. The optical control device according to claim 1, wherein said third line-defect waveguide has a length along the wave guiding direction not less than five times a lattice period.
4. The optical control device according to claim 1, wherein the thicknesses of the dielectric pillars contained in a line defect of said first line-defect waveguide and the dielectric pillars not contained in said line defect are thicker than that of the dielectric pillars contained in a line defect of said second line-defect waveguide and dielectric pillars not contained in said line defect, or the thicknesses of the dielectric pillars contained in a line defect of said second line-defect waveguide and the dielectric pillars not contained in said line defect are thicker than that of the dielectric pillars contained in a line defect of said first line-defect waveguide and dielectric pillars not contained in said line defect.
5. The optical control device according to claim 1, wherein thicknesses of the dielectric pillars contained in the line defect of said first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect(s) of said first and second line-defect waveguides, and the thicknesses of dielectric pillars not contained in the line defect(s) of said first and second line-defect waveguides are equal.
6. The optical control device according to claim 1, wherein thicknesses of the dielectric pillars not contained in a line defect of said first and second line-defect waveguides differ only with respect to those of the dielectric pillars not contained in line defect(s) of said first and second line-defect waveguides, and wherein the thicknesses of the dielectric pillars contained in the line defect(s) of said first and second line-defect waveguides are equal.
7. The optical control device according to claim 1, wherein the thicknesses of the dielectric pillars contained in the line defects of said first and second line-defect waveguides change in thickness in opposite directions between the dielectric pillars not contained in the line defect of the first and second line-defect waveguides and the dielectric pillars contained in the line defect of the first and second line-defect waveguides.
8. An optical control device including a plurality of line-defect waveguides provided in a photonic crystal; each line-defect waveguide including a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice; said optical control device comprising:
a first line-defect waveguide;
a second line-defect waveguide provided with dielectric pillars having cross-sectional shapes different from those of the dielectric pillars of said first line-defect waveguide; and
a third line-defect waveguide arranged between said first and second line-defect waveguides and provided with the dielectric pillars whose cross-sectional shapes are gradually varied from those of the dielectric pillars of said first line-defect waveguide to those of the dielectric pillars of said second line-defect waveguide in the course from said first line-defect waveguide towards said second line-defect waveguide along the wave guiding direction.
9. The optical control device according to claim 8, wherein a further line-defect waveguide, whose dielectric pillars have cross-sectional shapes gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of said optical control device including said first to third line-defect waveguides.
10. The optical control device according to claim 8, wherein said third line-defect waveguide has a length along the wave guiding direction not less than five times a lattice period.
11. The optical control device according to claim 8, wherein the cross-sectional shapes of the dielectric pillars contained in the line defect of said first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of said first and second line-defect waveguides, and wherein the cross-sectional shapes of dielectric pillars not contained in the line defect of said first and second line-defect waveguides are equal.
12. The optical control device according to claim 8, wherein
the cross-sectional shapes of the dielectric pillars not contained in the line defect of said first and second line-defect waveguides differ only with respect to those of dielectric pillars not contained in the line defect of said first and second line-defect waveguides, and wherein the cross-sectional shapes of the dielectric pillars contained in the line defects of said first and second line-defect waveguides are equal.
13. The optical control device according to claim 8, wherein, wherein, in said first and second line-defect waveguides, the cross-sectional shapes of the dielectric pillars contained in the line defects are equal to the cross-sectional shapes of the dielectric pillars not contained in the line defects.
14. The optical control device according to claim 8, wherein, in at least one of the first and second line-defect waveguides, the cross-sectional shapes of the dielectric pillars contained in the line defect are different from the cross-sectional shapes of the dielectric pillars not contained in the line defects.
15. An optical control device including a plurality of line-defect waveguides provided in a photonic crystal; each line-defect waveguide including a multiplicity of dielectric pillars with a finite height arranged at lattice points of a two-dimensional Bravais lattice; said optical control device comprising:
a first line-defect waveguide;
a second line-defect waveguide provided with the dielectric pillars that have lattice point intervals (that is, local lattice constants) different from those of the dielectric pillars of said first line-defect waveguide; and
a third line-defect waveguide arranged between said first and second line-defect waveguides and provided with dielectric pillars whose lattice point intervals are gradually varied from the those of the dielectric pillars of said first line-defect waveguide to the those of the dielectric pillars of said second line-defect waveguide in the course from said first line-defect waveguide towards said second line-defect waveguide, along the wave guiding direction.
16. The optical control device according to claim 15 wherein a further line-defect waveguide, whose lattice point intervals have cross-sectional shapes gradually varied along the wave guiding direction, is provided at one end or at each of both ends along the wave guiding direction of said optical control device including said first to third line-defect waveguides.
17. The optical control device according to claim 15, wherein said third line-defect waveguide has a length along the wave guiding direction not less than five times a lattice period.
18. The optical control device according to claim 15, wherein the lattice point intervals of the dielectric pillars contained in the line defect of said first and second line-defect waveguides differ only with respect to those of the dielectric pillars contained in the line defect of said first and second line-defect waveguides, and wherein the lattice point intervals of dielectric pillars not contained in the line defect of said first and second line-defect waveguides are equal.
19. The optical control device according to claim 15, wherein only lattice point intervals of the dielectric pillars not contained in the line defect of said first and second line-defect waveguides differ, and wherein the lattice point intervals of the dielectric pillars contained in the line defect(s) of said first and second line-defect waveguides are equal.
20. The optical control device according to claim 15, wherein, in said first and second line-defect waveguides, the lattice point intervals of the dielectric pillars contained in the line defects are equal to the lattice point intervals of the dielectric pillars not contained in the line defects.
21-24. (canceled)
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100091224A1 (en) * 2008-10-10 2010-04-15 Samsung Electronics Co., Ltd. Photonic crystal optical filter, reflective color filter, display apparatus using the reflective color filter, and method of manufacturing the reflective color filter
US20100091225A1 (en) * 2008-10-10 2010-04-15 Samsung Electronics Co., Ltd. Photonic crystal optical filter, transmissive color filter, transflective color filter, and display apparatus using the color filters
US20110008009A1 (en) * 2008-02-28 2011-01-13 Masatoshi Tokushima Optical waveguide
US20120099817A1 (en) * 2010-09-29 2012-04-26 Qimin Quan High Quality Factor Photonic Crystal Nanobeam Cavity and Method of Designing and Making Same
CN102520521A (en) * 2011-12-30 2012-06-27 中国科学院长春光学精密机械与物理研究所 Three-stage two-dimensional photonic crystal beam compression device and manufacturing method thereof
CN102520522A (en) * 2011-12-30 2012-06-27 中国科学院长春光学精密机械与物理研究所 Multi-stage two-dimensional photonic crystal beam compression device
US8467680B2 (en) 2010-12-07 2013-06-18 At&T Intellectual Property I, Lp Optical bandwidth control device
CN104678492A (en) * 2015-02-26 2015-06-03 南京邮电大学 Mode division multiplexing and de-multiplexing device based on photonic crystal
US9983419B1 (en) * 2016-11-08 2018-05-29 Samsung Electronics Co., Ltd. Optical modulator and optical modulating array including the same
US10418721B2 (en) * 2016-03-29 2019-09-17 California Institute Of Technology Low-profile and high-gain modulated metasurface antennas from gigahertz to terahertz range frequencies
US11315843B2 (en) 2016-12-28 2022-04-26 Intel Corporation Embedded component and methods of making the same

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8890271B2 (en) * 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9026407B1 (en) 2014-10-16 2015-05-05 Christine Marie Kennefick Method of making and using a material model of elements with planar faces

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030068152A1 (en) * 2001-09-10 2003-04-10 Gunn Lawrence Cary Structure and method for coupling light between dissimilar waveguides
US20030202764A1 (en) * 2002-04-24 2003-10-30 Youngkun Lee Optical waveguides and optical devices with optical waveguides
US20040109644A1 (en) * 2002-06-18 2004-06-10 Solomon Assefa Waveguide coupling into photonic crystal waveguides
US20040114868A1 (en) * 2002-12-17 2004-06-17 Mcnc Impedance control devices for use in the transition regions of electromagnetic and optical circuitry and methods for using the same
US20040156610A1 (en) * 1997-05-16 2004-08-12 Btg International Limited Optical devices and methods of fabrication thereof
US20040264903A1 (en) * 2001-10-19 2004-12-30 Dridi Kim Hakim Intergrated photonic crystal structure and method of producing same
US6888994B2 (en) * 2000-04-06 2005-05-03 Btg International Limited Optical device
US20050152656A1 (en) * 2001-11-21 2005-07-14 Centre National De La Recherche Scientifique Photonic crystal structure for mode conversion
US20050265660A1 (en) * 2004-05-27 2005-12-01 Energy Conversion Devices, Inc. Photonic coupling device
US20060159411A1 (en) * 2004-05-27 2006-07-20 Miller Robert A Photonic integrated circuit
US7123804B2 (en) * 2003-11-25 2006-10-17 Ricoh Company, Ltd Optical control element
US7248770B2 (en) * 2003-11-04 2007-07-24 Mesophotonics Limited Photonic band structure devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003240985A (en) 2002-02-15 2003-08-27 Mitsubishi Electric Corp Spot size converter, optical coupling element and optical element module
JP4381859B2 (en) * 2004-03-24 2009-12-09 株式会社リコー Light control element
JP2007017494A (en) * 2005-07-05 2007-01-25 Sharp Corp Photonic crystal waveguide

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040156610A1 (en) * 1997-05-16 2004-08-12 Btg International Limited Optical devices and methods of fabrication thereof
US6778746B2 (en) * 1997-05-16 2004-08-17 Btg International Limited Optical devices and methods of fabrication thereof
US6888994B2 (en) * 2000-04-06 2005-05-03 Btg International Limited Optical device
US20030068152A1 (en) * 2001-09-10 2003-04-10 Gunn Lawrence Cary Structure and method for coupling light between dissimilar waveguides
US20040264903A1 (en) * 2001-10-19 2004-12-30 Dridi Kim Hakim Intergrated photonic crystal structure and method of producing same
US20050152656A1 (en) * 2001-11-21 2005-07-14 Centre National De La Recherche Scientifique Photonic crystal structure for mode conversion
US7242837B2 (en) * 2001-11-21 2007-07-10 Centre National De La Recherche Scientifique Photonic crystal structure for mode conversion
US20030202764A1 (en) * 2002-04-24 2003-10-30 Youngkun Lee Optical waveguides and optical devices with optical waveguides
US20040109644A1 (en) * 2002-06-18 2004-06-10 Solomon Assefa Waveguide coupling into photonic crystal waveguides
US20040114868A1 (en) * 2002-12-17 2004-06-17 Mcnc Impedance control devices for use in the transition regions of electromagnetic and optical circuitry and methods for using the same
US6832029B2 (en) * 2002-12-17 2004-12-14 Mcnc Impedance control devices for use in the transition regions of electromagnetic and optical circuitry and methods for using the same
US7248770B2 (en) * 2003-11-04 2007-07-24 Mesophotonics Limited Photonic band structure devices
US7123804B2 (en) * 2003-11-25 2006-10-17 Ricoh Company, Ltd Optical control element
US20050265660A1 (en) * 2004-05-27 2005-12-01 Energy Conversion Devices, Inc. Photonic coupling device
US20060159411A1 (en) * 2004-05-27 2006-07-20 Miller Robert A Photonic integrated circuit

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110008009A1 (en) * 2008-02-28 2011-01-13 Masatoshi Tokushima Optical waveguide
US8355614B2 (en) * 2008-02-28 2013-01-15 Nec Corporation Optical waveguide
US20100091225A1 (en) * 2008-10-10 2010-04-15 Samsung Electronics Co., Ltd. Photonic crystal optical filter, transmissive color filter, transflective color filter, and display apparatus using the color filters
US20100091224A1 (en) * 2008-10-10 2010-04-15 Samsung Electronics Co., Ltd. Photonic crystal optical filter, reflective color filter, display apparatus using the reflective color filter, and method of manufacturing the reflective color filter
US8264637B2 (en) * 2008-10-10 2012-09-11 Samsung Electronics Co., Ltd. Photonic crystal optical filter, reflective color filter, display apparatus using the reflective color filter, and method of manufacturing the reflective color filter
US8363185B2 (en) * 2008-10-10 2013-01-29 Samsung Electronics Co., Ltd. Photonic crystal optical filter, transmissive color filter, transflective color filter, and display apparatus using the color filters
US20120099817A1 (en) * 2010-09-29 2012-04-26 Qimin Quan High Quality Factor Photonic Crystal Nanobeam Cavity and Method of Designing and Making Same
US8798414B2 (en) * 2010-09-29 2014-08-05 President And Fellows Of Harvard College High quality factor photonic crystal nanobeam cavity and method of designing and making same
US8467680B2 (en) 2010-12-07 2013-06-18 At&T Intellectual Property I, Lp Optical bandwidth control device
CN102520521A (en) * 2011-12-30 2012-06-27 中国科学院长春光学精密机械与物理研究所 Three-stage two-dimensional photonic crystal beam compression device and manufacturing method thereof
CN102520522A (en) * 2011-12-30 2012-06-27 中国科学院长春光学精密机械与物理研究所 Multi-stage two-dimensional photonic crystal beam compression device
CN104678492A (en) * 2015-02-26 2015-06-03 南京邮电大学 Mode division multiplexing and de-multiplexing device based on photonic crystal
US10418721B2 (en) * 2016-03-29 2019-09-17 California Institute Of Technology Low-profile and high-gain modulated metasurface antennas from gigahertz to terahertz range frequencies
US9983419B1 (en) * 2016-11-08 2018-05-29 Samsung Electronics Co., Ltd. Optical modulator and optical modulating array including the same
US11315843B2 (en) 2016-12-28 2022-04-26 Intel Corporation Embedded component and methods of making the same
US11710674B2 (en) 2016-12-28 2023-07-25 Intel Corporation Embedded component and methods of making the same

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