US20100047957A1 - Method for forming solar cell having active region with nanostructures having energy wells - Google Patents
Method for forming solar cell having active region with nanostructures having energy wells Download PDFInfo
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- US20100047957A1 US20100047957A1 US12/611,483 US61148309A US2010047957A1 US 20100047957 A1 US20100047957 A1 US 20100047957A1 US 61148309 A US61148309 A US 61148309A US 2010047957 A1 US2010047957 A1 US 2010047957A1
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 50
- 229910052738 indium Inorganic materials 0.000 claims abstract description 35
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 51
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 230000005670 electromagnetic radiation Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000005641 tunneling Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000010779 crude oil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L31/0264—Inorganic materials
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- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- the present invention relates to solar cell designs.
- embodiments of the present invention relate to an active region of a solar cell having energy wells.
- Solar-cell technology is currently poised to make significant progress in mass adoption due in part to the looming shortage of traditional energy sources, e.g. crude oil and natural gas, and to the increased awareness of “green-technology” benefits.
- Solar-cell technology though capturing “free” energy from the sun, has been expensive with per-watt ownership cost ($/W) far exceeding $/W offered by electric utilities.
- per-watt ownership cost ($/W) far exceeding $/W offered by electric utilities.
- the pay-off period for a solar panel is as much as 50% of its lifespan, due largely to the expense of the semiconductor material used.
- the persistently high $/W figure has led to ideas on cost reduction, an example of which is concentrated photovoltaics (CPV).
- CPV concentrated photovoltaics
- the sun's energy is concentrated hundreds of times onto a solar cell.
- CPV CPV
- the solar cell requires the solar cell to be very thermally robust due to high heat resulting from the concentration. Fortunately, the advent of new materials with more robust thermal properties and band gap energies better suited to the sun's spectrum has made solar technology attractive again through CPV.
- each junction is formed of a different material.
- III-V compound semiconductors e.g., InGaAs, InGaP
- group IV materials e.g., Ge
- III-V compound-semiconductor-based solar cells are more expensive than single junction Si devices due to material cost as well as manufacturing complexity. Therefore, these devices have been excluded in the traditional solar-panel business where sheer size requirement meant prohibitive cost. Space and other niche applications have, however, sustained the specialized interests in the more expensive but more efficient and robust solar cells based on the III-V compound semiconductors.
- FIG. 1 is an example single junction solar cell, in accordance with an embodiment of the present invention.
- FIG. 2 depicts a physical structure of a single nanostructure and a corresponding conduction energy band diagram, in accordance with an embodiment of the present invention.
- FIG. 3A , FIG. 3B , FIG. 3C , FIG. 3D , and FIG. 3E are conduction energy band diagrams for different energy well configurations, in accordance with embodiments of the present invention.
- FIG. 4 illustrates an example three junction solar cell, in accordance with an embodiment of the present invention.
- FIG. 5 illustrates an example two junction solar cell, in accordance with an embodiment of the present invention.
- FIG. 6 illustrates an example solar cell in which the growth substrate has been etched away, in accordance with an embodiment of the present invention.
- a photovoltaic cell (“solar cell”) having a photo-active region (“active region”) with energy wells is disclosed herein.
- the energy wells may be quantum wells, but that is not required.
- the energy wells may be graded, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
- the solar cell admits electromagnetic radiation through what will be referred to as a “window” of the solar cell. In general, the energy wells that are further away from the window have a lower band gap than energy wells nearer to the window.
- the active region comprises nanostructures, in one embodiment.
- the nanostructures may be nanocolumns, nanowires, nanorods, nanotubes, etc.
- the nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor.
- the III-V compound semiconductor could be gallium nitride (GaN), which has a band gap that is about 3.4 eV.
- the “band gap altering element” could be indium (In). When In is incorporated into GaN, and replaces the Ga, the band gap of the resulting InGaN is lower than the band gap of GaN.
- the band gap of InGaN If all of the Ga is replaced by In, resulting in InN, the band gap is about 0.7 eV.
- a significant amount of In can be incorporated into nanostructures of InGaN, with the nanostructures being substantially free of defects and strain.
- the concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers.
- the energy wells are capable of “absorbing” photons.
- the energy wells are “graded”, by which it is meant that band gap of each energy well progressively decreases moving away from the window.
- the energy wells that are closer to the window absorb photons that have energy that is at least as high as the band gap, but do not absorb photons having less energy.
- energy wells that are further from the window are able to absorb photons having less energy.
- photons with a wavelength of about 365 nanometers (nm) have an energy of about 3.4 eV. Therefore, photons having a wavelength of 365 nm or shorter may be absorbed by a material having a band gap of 3.4 eV (e.g., GaN).
- photons with a wavelength of about 1700 nanometers (nm) have an energy of about 0.7 eV. Therefore, photons of 1700 nm or shorter may be absorbed by a material having a band gap of 0.7 eV (e.g., InN).
- InN band gap of 0.7 eV
- a barrier between two energy wells has a higher band gap than those two energy wells, and will therefore not absorb photons whose energies are less than the barrier band gap. In other words, a photon must have a very short wavelength to be absorbed by a barrier.
- the barriers may serve to impede charge carriers from migrating between energy wells. However, charge carriers that are sufficiently energetic can “escape” the energy wells and be swept away as drift current (this drift current serves as the solar cell “output”).
- FIG. 1 is an example single junction solar cell 100 , in accordance with an embodiment of the present invention.
- the example solar cell 100 in general comprises a top contact/window 102 , a top junction layer 104 , an active region 106 , a substrate 108 (which may serve also as a bottom junction layer), a bottom contact 110 , and electrical leads 112 .
- the top contact/window 102 is transparent to electromagnetic radiation in at least a portion of the spectrum.
- Solar radiation (e.g., photons) 114 enters through the top contact/window 102 and may be absorbed in the active region 106 .
- Absorption of a photon promotes an electron to the conduction band.
- Electrons promoted to a conduction band by the absorption of photons may conduct to the contacts 102 , 110 . Note that behavior of holes will not be discussed.
- the lower contact 110 may be made of a suitable metal, and does not need to be transparent.
- the lower contact 110 may be optimized for high reflectivity for all solar cell devices containing the layer 110 .
- the electrons conduct through the electrical leads 112 .
- the active region 106 is formed from a number of nanostructures 115 laterally distributed in the solar cell 100 .
- the active region 106 is designed such that higher energy photons are absorbed near the window 102 and lower energy photons are absorbed near the substrate 108 . This is accomplished by varying the concentration of a band gap altering element in the nanostructures 115 .
- each segment 117 of a nanostructure 115 has a particular concentration of the band gap altering element to achieve a desired band gap for that segment 117 .
- the active region 106 is more fully described below.
- the nanostructures 115 are formed of InGaN.
- the solar cell 100 may be an n-on-p device or a p-on-n device.
- the InGaN material is grown on a p-type substrate 108 .
- the solar cell 100 is a p-on-n single junction device with InGaN material grown on an n-type substrate 108 .
- suitable materials for the substrate 108 include, but are not limited to, Si, germanium (Ge), silicon carbide (SiC), and zinc oxide (ZnO). If the substrate 108 is either Si, or Ge, the substrate 108 may be (111) plane oriented.
- the substrate 108 may be (0001) plane oriented.
- the substrate 108 is doped with a p-type dopant, in one embodiment.
- An example of a p-type dopant for Si substrates includes, but is not limited to, boron (B).
- the p-type doping may be p, p + or, p ++ .
- the substrate 108 is doped with an n-type dopant, in one embodiment. Examples of n-type dopants for Si substrates include, but are not limited to, arsenic (As) and phosphorous (P).
- the n-type doping may be n, n + or, n ++ .
- the active region 106 may be doped, resulting in either a p-n device or an n-p device. In such devices, a diode junction may appear near the window 102 , close to the interface between top junction layer 104 and active region 106 . However, the active region 106 does not need to be doped, resulting in either a p-i-n device or an n-i-p device. For example, in a p-i-n device, the electric field of the diode may appear across the active region 106 . Further, the amount of doping in the active region 106 can be non-uniform. For example, some segments 117 may be heavily doped, other segments 117 may be lightly doped, still others may be undoped.
- the nanostructures 115 may be grown either by self-assembly or by patterned growth using epitaxial growth techniques such as metalorganic chemical vapor deposition, molecular beam epitaxy and hydride vapor phase epitaxy. In patterned growth, a portion of the substrate surface which is not covered by mask material such as SiO 2 or SiN x is exposed to serve as nucleation sites for the nanostructures.
- the concentration of the indium in the nanostructures 115 is adjusted during the growth of the nanostructures 115 such that different segments 117 have different indium concentrations.
- a factor affecting the indium incorporation is amount of indium supply during active-region growth. Another factor affecting the indium incorporation is temperature, which affects the evaporation rate of indium on the growth surface during growth.
- the segment 117 of a nanostructure 115 that is adjacent to the substrate 108 may have any amount of indium concentration.
- the lateral width of the nanostructures 115 may range from about 5 nm-500 nm. The entire range of widths may be present in a single active region 106 .
- the width of at least some of the nanostructures 115 is sufficiently wide such that there is no quantum confinement effect in the lateral direction, in one embodiment. However, the width of at least some of the nanostructures 115 is sufficiently narrow to cause quantum confinement in the lateral direction, in one embodiment.
- the lateral width of a nanostructure 115 may be less than 5 nm and may be greater than 500 nm.
- the relatively narrow width may result in the nanostructures 115 being strain relaxed. Strain relaxed nanostructures 115 may allow for a high concentration of indium to be incorporated therein.
- the segments 117 may have any length. Further, segments 117 in a particular nanostructure 115 may have different lengths from each other. In one embodiment, the indium concentration is approximately uniform in a particular segment 117 . In one embodiment, the indium concentration changes continuously along the growth axis of the nanostructures 115 . Thus, the nanostructures 115 do not have segments 117 , in one embodiment.
- Top junction layer 104 may be formed from the same compound semiconductor as the nanostructures 115 .
- junction layer 104 may be formed from InGaN.
- the formula for the InGaN is In y Ga y ⁇ 1 N, where y may be any value between 0 and 1.
- Top junction layer 104 may comprise more than one sublayer, with the sublayers having different concentrations of indium.
- junction layer 104 is depicted as being coalesced in the example solar cell 100 . However, junction layer 104 may be uncoalesced. That is, distinct nanostructures 115 may extend into all, or a portion of, junction layer 104 .
- junction layer 104 is n-doped.
- the n-type doping may be n, n + or, n ++ .
- junction layer 104 is p-doped.
- the p-type doping may be p, p + or, p ++ .
- junction layer 104 may be directly deposited to junction layer 104 .
- a metal grid, an indium-tin-oxide (ITO) grid, or an ITO sheet may be directly deposited onto coalesced junction layer 104 .
- ITO indium-tin-oxide
- a transparent substrate can be bonded to the uncoalesced junction layer 104 with a grid or a full sheet ITO, or a metal grid deposited onto the transparent substrate.
- the example solar cell 100 is compatible with solar concentration systems, which focus electromagnetic radiation many times onto the solar cell 100 .
- the active region 106 may comprise segments 117 , each having a particular concentration of a “band gap altering element.”
- band gap altering element as any element whose concentration affects the band gap of the material into which it is incorporated.
- indium is a band gap altering element when incorporated into at least some III-V compound semiconductors.
- the concentration of indium in GaN affects the band gap of InGaN.
- the indium replaces the gallium when it is incorporated into GaN.
- the formula for segments 117 may be In x Ga x ⁇ 1 N.
- Indium may also affect the band gap of other III-V compound semiconductors.
- In may lower the band gap of a III-V compound semiconductor.
- Other band gap altering elements may increase the band gap.
- the incorporation of aluminum (Al) increases the band gap of GaN. That is, the higher the concentration of Al in AlGaN, the higher will be the band gap of AlGaN.
- FIG. 2 depicts a physical structure of a single nanostructure 115 that is divided into segments 117 a , 117 b and a conduction energy band diagram 202 showing energy wells 204 and barriers 206 corresponding to the segments 117 in the nanostructure 115 .
- the energy wells 204 may be quantum wells, but that is not a requirement.
- the nanostructure 115 has a number of well segments 117 a and a number of barrier segments 117 b . Well segments are also referenced as W 1 -W n .
- a well segment 117 a is defined as a segment 117 that results in an energy well 204 .
- a barrier segment 117 b is defined as a segment 117 that results in an energy barrier 206 .
- Well segment W 1 is closest to the window 102 of the solar cell where solar radiation is admitted. Comparing the well segments 117 a with each other, the indium concentration is higher in the well segments 117 a that are further away from the window 102 of the solar cell.
- the energy wells 204 further from the window 102 have a lower band gap than energy wells 204 near the window 102 .
- the term “graded energy wells” is used herein to describe a configuration of, in general, decreasing band gaps of well segments 117 a in the direction away from the window 102 of the solar cell.
- the barrier segments 117 b have approximately the same indium concentration as each other. Therefore, the “height” of the energy barriers 206 that corresponds to the barrier segments 117 b are approximately the same as each other, as depicted in the energy band diagram 202 . This results in an approximately level band gap from the window 102 to the substrate 108 of the solar cell for barrier segments 117 b . However, this level band gap for barrier segments 117 b is not required. In one embodiment, the band gap of the barrier segments 117 b is graded such that the band gap, in general, decreases from barrier segments 117 b nearer to the window 102 to those further from the window 102 .
- the bottom of a particular energy well 204 is depicted as being substantially flat. In other words, as having substantially uniform band gap. However, effects such as a piezoelectric effect may cause a slope at the bottom of energy wells 204 . Further, the band gap for barrier segments 117 b may also have a slope even though the concentration of indium is uniform throughout a particular barrier segment 117 b.
- FIG. 2 shows a thermal energy distribution (E) for electrons in one of the energy wells 204 a . Electrons having at least as much energy as the conduction band of the barriers 206 can “escape” the energy well 204 a and migrate out of the active region 106 .
- the shape of the thermal distribution (E) may tend to remain the same despite the more energetic photons exiting the energy well 204 a . Electrons with sufficient thermal energy in the other energy wells 204 b - d will also migrate out of the active region 106 . The electrons that exit the energy wells 204 a - d migrate towards the window 102 in an “n-on-p” embodiment due to the electric field generated by the n-p junction. The electrons migrate away from the window 102 in a “p-on-n” embodiment due to the electric field generated by the p-n junction. The elevated temperature of solar cell during CPV operation may benefit the operation as thermal energy will increase the number of electrons able to escape wells and be swept away as drift current.
- the band gap of the barrier segments 117 b may be used as parameter for determining output voltage.
- each of the energy wells 204 has a different band gap from each other.
- the energy wells 204 are grouped, as depicted in the conduction energy band diagram 310 of FIG. 3A .
- each energy well 204 may be individually configured to fine tune the band gap using quantum confinement effect, as depicted in the conduction energy band diagram 320 of FIG. 3B .
- the well width WW may be configured by controlling the length of well segments 117 a during nanostructure formation.
- each barrier 206 may be individually configured to control tunneling between energy wells 204 , as depicted in the conduction energy band diagram 330 of FIG. 3C .
- the barrier width B w may be configured by controlling the length of barrier segments 117 b during nanostructure 115 growth.
- the well width may be configured to influence (e.g., reduce) electron-hole recombination rate by affecting piezoelectric field effect due to polarization charges at well-barrier interfaces.
- Energy wells 204 and barriers 206 may individually be doped appropriately (undoped, n-type, p-type) to also affect (e.g., reduce) electron-hole recombination rate by affecting the piezoelectric field due to polarization charges at well-barrier interfaces.
- the barriers 206 are graded, as depicted in the conduction energy band diagram 340 of FIG. 3D .
- Barriers 206 can be graded by appropriate selection of the concentration of the band gap altering element during nanostructure 115 growth.
- the concentration of the band gap altering element changes continuously throughout all, or a portion of, the active region 106 .
- FIG. 3E depicts a conduction energy band diagram 350 for an embodiment in which the band gap changes continuously in at least a portion of the active region 106 due to a continuous change in concentration of the band gap altering element.
- the solar cell device has one or more tunnel junctions.
- FIG. 4 illustrates on example three junction device 400 , in accordance with an embodiment of the present invention.
- the device 400 has top contact/window 102 , top junction layers 104 a - c , active regions 106 a - c , tunnel junctions 412 , substrate 108 , bottom contact 110 , and electrical leads 112 .
- the three active regions 106 a - c are separated by tunnel junctions 412 . Further, each active region 106 a - c is paired with a top junction layer 104 a - c to form a junction. Each of the three active regions 106 a - c may be configured for absorption of photons of different ranges of wavelengths. For example, the different segments 117 in active region 106 a may be configured to absorb photons from 365 nm to R nm. In active region 106 b , the segments 117 may be configured to absorb photons from R nm to S nm. In active region 106 c , the segments 117 may be configured to absorb photons from S nm to 1700 nm.
- a band gap altering element e.g., indium
- concentration of a band gap altering element is selected to achieve the desired wavelength absorption.
- a band gap energy corresponds to a “characteristic wavelength”, which is equal to the longest wavelength of a photon that can be absorbed. Because the segments 117 nearest the window 102 have the highest band gaps, their characteristic wavelengths are the shortest and thus, “transmit” or “pass” those photons with longer wavelengths. In this manner, the segments 117 nearest the window 102 act as “long-pass filters” for the segments 117 further away from the window 102 , and wavelengths of absorbed photons progressively become longer, further away from window 102 .
- some segments 117 may act as energy wells 204 with others acting as energy barriers 206 with higher band gap than adjacent segments 117 .
- the energy wells 204 may be graded. However, in one embodiment, at least a portion of the active region 106 has a continuous change in the band gap as depicted in FIG. 3E .
- Series connection of the three junctions is achieved by two tunnel junctions 412 separating the three junctions.
- the tunnel junctions 412 are grown in the device 400 , in the embodiment depicted in FIG. 4 , so the device 400 is monolithic.
- more or fewer active regions 106 and tunnel junctions 412 may be used.
- the device 400 may be an n-on-p device or a p-on-n device.
- the active regions 106 may comprise InGaN, although other materials might be used.
- the discussion of the top contact 102 , substrate 108 , and bottom contact 110 of example solar cell 100 in FIG. 1 applies to example device 400 .
- the top junction layers 104 a - c are similar to those in example solar cell 100 . However, only the top junction layer 104 a near the top contact/window 102 may be coalesced. Top junction layers 104 b , 104 c are not coalesced.
- FIG. 5 illustrates an example two-junction solar cell 500 , in accordance with an embodiment of the present invention.
- the solar cell 500 may be fabricated by separately growing two devices and bonding them together.
- the two devices are upper device 501 and lower device 502 .
- Upper device 501 may be formed by growing nanostructures of InGaN material on substrate 108 b .
- solar cell 500 will be discussed with respect to a particular n- and p-type doping. However, variations of the doping are possible. Further, InGaN is used for illustration, but other materials may be used.
- Substrate 108 b is transparent to electromagnetic radiation in a region of interest and may be an n-type SiC or ZnO substrate.
- the region of interest may be the visible and infrared wavelengths, but could extend outside of these wavelengths.
- the InGaN material in device 501 has three regions. Closest to the substrate 108 b is an uncoalesced top junction layer 104 , which may have any indium concentration.
- the doping may be n, n + or, n ++ .
- the active region 106 d may be undoped or have p-type doping.
- the segments 117 have different indium concentration from each other such that the target absorption spectrum ranges from about 365 nm to R nm.
- the device 501 has a lower junction layer 512 .
- the lower junction layer 512 may be coalesced or uncoalesced.
- the doping of the lower junction layer may be p, p + or, p ++ .
- the lower device 502 may be formed by growing nanostructures 115 of InGaN material on substrate 108 a .
- Substrate 108 a does not need to be transparent and may be p-type Si, Ge, SiC, or ZnO.
- the InGaN material in device 502 has two regions. Closest to the substrate 108 a is the active region 106 e , which may be undoped or have p-type doping.
- the segments 117 have different indium concentration from each other such that the target absorption spectrum ranges from about R nm to 1700 nm.
- the device 502 has a junction layer 514 , which completes the n-p junction.
- the junction layer 514 is coalesced, in the embodiment depicted in FIG. 5 .
- the junction layer 514 may be formed by growing nanostructures that coalesce in junction layer 514 .
- the doping may be n, n + or, n ++ .
- the upper device 501 may be bonded to the lower device 502 by using a transparent ITO 506 as the bonding material between the devices 501 and 502 .
- the two diode junctions are therefore connected in series.
- the electricity generated conducts vertically to contact 110 , which are made of suitable metals.
- three or more devices can be used.
- An additional transparent ITO is used to bond the additional device to one of the others.
- the target absorption spectrum ranges can be divided into three regions.
- some segments 117 may act as energy wells 204 with others acting as energy barriers 206 with higher band gap than adjacent segments 117 .
- the energy wells 204 may be graded. However, in one embodiment, at least a portion of the active region 106 has a continuous change in the band gap as depicted in FIG. 3E .
- FIG. 6 illustrates an example solar cell 600 in which the growth substrate has been etched away, in accordance with an embodiment.
- the example solar cell 600 has a top contact/window 102 , a top junction layer 104 , an active region 106 formed of nanostructures 115 , a lower junction layer 612 , a lower contact 614 , a base substrate 616 , and electrical leads 112 .
- the active region 106 and lower junction layer 612 are nanostructures 115 that are grown on a substrate that has been etched away.
- the nanostructures 115 may comprise InGaN material.
- a different band gap altering element and a different III-V compound semiconductor may be used.
- the lower contact 614 and base substrate 616 are bonded to the nanostructures 115 .
- the lower contact 614 may be sheet metal for good electrical conduction to the lead 112 .
- the base substrate 616 should have good heat conductivity and provides mechanical support. In addition, the base substrate 616 may be optimized for high reflectivity.
- the example solar cell 600 is a p-on-n device.
- the lower junction 612 may be n-doped
- the top junction layer 104 may be p-doped
- the active region 106 may be n-doped.
- etching away the substrate may be used with n-on-p, n-i-p, and p-i-n devices. Further, etching away of the growth substrate is not limited to single junction devices.
- active region 106 of example solar cell 600 some segments 117 may act as energy wells 204 with others acting as energy barriers 206 with higher band gap than adjacent segments 117 .
- the energy wells 204 may be graded. However, in one embodiment, at least a portion of the active region 106 has a continuous change in the band gap as depicted in FIG. 3E .
- the substrate 108 is made reflective such that photons that are not absorbed in the active region 106 are reflected back to the active region.
- the substrate 108 e.g., Si
- the substrate 108 used for nanostructure 115 growth may be etched to generate porous Si that diffusely reflects unabsorbed photons back towards the active region 106 . Because making the substrate 108 porous may reduce vertical conductivity, the substrate 108 may be made partially porous.
- the substrate 108 is an n-type Si substrate. However, the substrate 108 is not limited to Si, or to n-type doping. Making the substrate 108 reflective is not limited to single junction devices.
Abstract
A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
Description
- This application is a divisional of U.S. patent application Ser. No. 11/648,059 entitled “SOLAR CELL HAVING ACTIVE REGION WITH NANOSTRUCTURES HAVING ENERGY WELLS,” filed on Dec. 29, 2006, now pending.
- The present invention relates to solar cell designs. In particular, embodiments of the present invention relate to an active region of a solar cell having energy wells.
- Solar-cell technology is currently poised to make significant progress in mass adoption due in part to the looming shortage of traditional energy sources, e.g. crude oil and natural gas, and to the increased awareness of “green-technology” benefits. Solar-cell technology, though capturing “free” energy from the sun, has been expensive with per-watt ownership cost ($/W) far exceeding $/W offered by electric utilities. Recently at $5/W, the pay-off period for a solar panel is as much as 50% of its lifespan, due largely to the expense of the semiconductor material used. The persistently high $/W figure has led to ideas on cost reduction, an example of which is concentrated photovoltaics (CPV). In CPV, the sun's energy is concentrated hundreds of times onto a solar cell. CPV, however, requires the solar cell to be very thermally robust due to high heat resulting from the concentration. Fortunately, the advent of new materials with more robust thermal properties and band gap energies better suited to the sun's spectrum has made solar technology attractive again through CPV.
- Until recently, silicon (Si) has been at the core of solar-cell technology. However, efficiency for the best single-junction-Si-based cells only reaches about 22%. Recently, multi-junction solar cell designs have achieved efficiencies that far surpass single junction devices. In the multi-junction design, typically, each junction is formed of a different material. For example, III-V compound semiconductors (e.g., InGaAs, InGaP) and group IV materials (e.g., Ge), have been used together to make multi-junction solar cells. These multi-junction solar cells typically use a different material for each junction. Laboratory efficiencies as high as 40.7% in a three junction design using the three mentioned semiconductors have been claimed.
- However, these III-V compound-semiconductor-based solar cells are more expensive than single junction Si devices due to material cost as well as manufacturing complexity. Therefore, these devices have been excluded in the traditional solar-panel business where sheer size requirement meant prohibitive cost. Space and other niche applications have, however, sustained the specialized interests in the more expensive but more efficient and robust solar cells based on the III-V compound semiconductors.
- Therefore, while improvements have been made in solar cell efficiency, still further improvements in efficiency are desirable. It is further desirable that the per-watt ownership cost of solar cells be reduced.
- The approaches described in this section are approaches that could be pursued, but not necessarily approaches that have been previously conceived or pursued. Therefore, unless otherwise indicated, it should not be assumed that any of the approaches described in this section qualify as prior art merely by virtue of their inclusion in this section.
- The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:
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FIG. 1 is an example single junction solar cell, in accordance with an embodiment of the present invention. -
FIG. 2 depicts a physical structure of a single nanostructure and a corresponding conduction energy band diagram, in accordance with an embodiment of the present invention. -
FIG. 3A ,FIG. 3B ,FIG. 3C ,FIG. 3D , andFIG. 3E are conduction energy band diagrams for different energy well configurations, in accordance with embodiments of the present invention. -
FIG. 4 illustrates an example three junction solar cell, in accordance with an embodiment of the present invention. -
FIG. 5 illustrates an example two junction solar cell, in accordance with an embodiment of the present invention. -
FIG. 6 illustrates an example solar cell in which the growth substrate has been etched away, in accordance with an embodiment of the present invention. - In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, that the present invention may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring the present invention.
- A photovoltaic cell (“solar cell”) having a photo-active region (“active region”) with energy wells is disclosed herein. The energy wells may be quantum wells, but that is not required. The energy wells may be graded, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically. The solar cell admits electromagnetic radiation through what will be referred to as a “window” of the solar cell. In general, the energy wells that are further away from the window have a lower band gap than energy wells nearer to the window.
- The active region comprises nanostructures, in one embodiment. The nanostructures may be nanocolumns, nanowires, nanorods, nanotubes, etc. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN), which has a band gap that is about 3.4 eV. As an example, the “band gap altering element” could be indium (In). When In is incorporated into GaN, and replaces the Ga, the band gap of the resulting InGaN is lower than the band gap of GaN. The more In that is incorporated (and therefore the more Ga that is replaced), the lower the band gap of InGaN. If all of the Ga is replaced by In, resulting in InN, the band gap is about 0.7 eV. A significant amount of In can be incorporated into nanostructures of InGaN, with the nanostructures being substantially free of defects and strain.
- In one embodiment, the concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells are capable of “absorbing” photons. As previously mentioned, the energy wells are “graded”, by which it is meant that band gap of each energy well progressively decreases moving away from the window. Thus, the energy wells that are closer to the window absorb photons that have energy that is at least as high as the band gap, but do not absorb photons having less energy. However, energy wells that are further from the window are able to absorb photons having less energy.
- Note that photons with a wavelength of about 365 nanometers (nm) have an energy of about 3.4 eV. Therefore, photons having a wavelength of 365 nm or shorter may be absorbed by a material having a band gap of 3.4 eV (e.g., GaN). Note that photons with a wavelength of about 1700 nanometers (nm) have an energy of about 0.7 eV. Therefore, photons of 1700 nm or shorter may be absorbed by a material having a band gap of 0.7 eV (e.g., InN). Further note that by having the In concentration increase from the window to the back of the solar cell, photons with increasingly less energy (longer wavelength) may be absorbed further from the window.
- A barrier between two energy wells has a higher band gap than those two energy wells, and will therefore not absorb photons whose energies are less than the barrier band gap. In other words, a photon must have a very short wavelength to be absorbed by a barrier. The barriers may serve to impede charge carriers from migrating between energy wells. However, charge carriers that are sufficiently energetic can “escape” the energy wells and be swept away as drift current (this drift current serves as the solar cell “output”).
-
FIG. 1 is an example single junctionsolar cell 100, in accordance with an embodiment of the present invention. The examplesolar cell 100 in general comprises a top contact/window 102, atop junction layer 104, anactive region 106, a substrate 108 (which may serve also as a bottom junction layer), abottom contact 110, and electrical leads 112. - The top contact/
window 102 is transparent to electromagnetic radiation in at least a portion of the spectrum. Solar radiation (e.g., photons) 114 enters through the top contact/window 102 and may be absorbed in theactive region 106. Absorption of a photon promotes an electron to the conduction band. Electrons promoted to a conduction band by the absorption of photons may conduct to thecontacts lower contact 110 may be made of a suitable metal, and does not need to be transparent. Thelower contact 110 may be optimized for high reflectivity for all solar cell devices containing thelayer 110. The electrons conduct through the electrical leads 112. - The
active region 106 is formed from a number ofnanostructures 115 laterally distributed in thesolar cell 100. Theactive region 106 is designed such that higher energy photons are absorbed near thewindow 102 and lower energy photons are absorbed near thesubstrate 108. This is accomplished by varying the concentration of a band gap altering element in thenanostructures 115. In particular, eachsegment 117 of ananostructure 115 has a particular concentration of the band gap altering element to achieve a desired band gap for thatsegment 117. Theactive region 106 is more fully described below. - In one embodiment, the
nanostructures 115 are formed of InGaN. Thesolar cell 100 may be an n-on-p device or a p-on-n device. In an n-on-p embodiment, the InGaN material is grown on a p-type substrate 108. In another embodiment, thesolar cell 100 is a p-on-n single junction device with InGaN material grown on an n-type substrate 108. Examples of suitable materials for thesubstrate 108 include, but are not limited to, Si, germanium (Ge), silicon carbide (SiC), and zinc oxide (ZnO). If thesubstrate 108 is either Si, or Ge, thesubstrate 108 may be (111) plane oriented. If thesubstrate 108 is SiC, or ZnO, thesubstrate 108 may be (0001) plane oriented. Thesubstrate 108 is doped with a p-type dopant, in one embodiment. An example of a p-type dopant for Si substrates includes, but is not limited to, boron (B). The p-type doping may be p, p+ or, p++. Thesubstrate 108 is doped with an n-type dopant, in one embodiment. Examples of n-type dopants for Si substrates include, but are not limited to, arsenic (As) and phosphorous (P). The n-type doping may be n, n+ or, n++. - The
active region 106 may be doped, resulting in either a p-n device or an n-p device. In such devices, a diode junction may appear near thewindow 102, close to the interface betweentop junction layer 104 andactive region 106. However, theactive region 106 does not need to be doped, resulting in either a p-i-n device or an n-i-p device. For example, in a p-i-n device, the electric field of the diode may appear across theactive region 106. Further, the amount of doping in theactive region 106 can be non-uniform. For example, somesegments 117 may be heavily doped,other segments 117 may be lightly doped, still others may be undoped. - The
nanostructures 115 may be grown either by self-assembly or by patterned growth using epitaxial growth techniques such as metalorganic chemical vapor deposition, molecular beam epitaxy and hydride vapor phase epitaxy. In patterned growth, a portion of the substrate surface which is not covered by mask material such as SiO2 or SiNx is exposed to serve as nucleation sites for the nanostructures. The concentration of the indium in thenanostructures 115 is adjusted during the growth of thenanostructures 115 such thatdifferent segments 117 have different indium concentrations. A factor affecting the indium incorporation is amount of indium supply during active-region growth. Another factor affecting the indium incorporation is temperature, which affects the evaporation rate of indium on the growth surface during growth. Other factors may also affect the amount of indium that is incorporated into thenanostructures 115. When grown on an n-type substrate 108, thesegment 117 of ananostructure 115 that is adjacent to thesubstrate 108 may have any amount of indium concentration. - The lateral width of the
nanostructures 115 may range from about 5 nm-500 nm. The entire range of widths may be present in a singleactive region 106. The width of at least some of thenanostructures 115 is sufficiently wide such that there is no quantum confinement effect in the lateral direction, in one embodiment. However, the width of at least some of thenanostructures 115 is sufficiently narrow to cause quantum confinement in the lateral direction, in one embodiment. The lateral width of ananostructure 115 may be less than 5 nm and may be greater than 500 nm. The relatively narrow width may result in thenanostructures 115 being strain relaxed. Strainrelaxed nanostructures 115 may allow for a high concentration of indium to be incorporated therein. - The
segments 117 may have any length. Further,segments 117 in aparticular nanostructure 115 may have different lengths from each other. In one embodiment, the indium concentration is approximately uniform in aparticular segment 117. In one embodiment, the indium concentration changes continuously along the growth axis of thenanostructures 115. Thus, thenanostructures 115 do not havesegments 117, in one embodiment. -
Top junction layer 104 may be formed from the same compound semiconductor as thenanostructures 115. For example,junction layer 104 may be formed from InGaN. Injunction layer 104, the formula for the InGaN is InyGay−1N, where y may be any value between 0 and 1.Top junction layer 104 may comprise more than one sublayer, with the sublayers having different concentrations of indium. - The
junction layer 104 is depicted as being coalesced in the examplesolar cell 100. However,junction layer 104 may be uncoalesced. That is,distinct nanostructures 115 may extend into all, or a portion of,junction layer 104. In the embodiment in which thesolar cell 100 is an n-on-p device,junction layer 104 is n-doped. The n-type doping may be n, n+ or, n++. In the embodiment in which thesolar cell 100 is a p-on-n device,junction layer 104 is p-doped. The p-type doping may be p, p+ or, p++. - If
junction layer 104 is coalesced, then the top contact/window 102 may be directly deposited tojunction layer 104. As examples, a metal grid, an indium-tin-oxide (ITO) grid, or an ITO sheet may be directly deposited onto coalescedjunction layer 104. Ifjunction layer 104 is uncoalesced, then a transparent substrate can be bonded to theuncoalesced junction layer 104 with a grid or a full sheet ITO, or a metal grid deposited onto the transparent substrate. - The example
solar cell 100 is compatible with solar concentration systems, which focus electromagnetic radiation many times onto thesolar cell 100. - The
active region 106 may comprisesegments 117, each having a particular concentration of a “band gap altering element.” As used herein, the term “band gap altering element” as any element whose concentration affects the band gap of the material into which it is incorporated. As an example, indium is a band gap altering element when incorporated into at least some III-V compound semiconductors. As a particular example, the concentration of indium in GaN affects the band gap of InGaN. The indium replaces the gallium when it is incorporated into GaN. Thus, the formula forsegments 117 may be InxGax−1N. Indium may also affect the band gap of other III-V compound semiconductors. In general, In may lower the band gap of a III-V compound semiconductor. Other band gap altering elements may increase the band gap. For example, the incorporation of aluminum (Al) increases the band gap of GaN. That is, the higher the concentration of Al in AlGaN, the higher will be the band gap of AlGaN. - For purposes of illustration, the following discussion will use In as an example band gap altering element. However, an element other than In might be used. The different concentration of In results in a number of energy wells with barriers between the energy wells, in one embodiment.
FIG. 2 depicts a physical structure of asingle nanostructure 115 that is divided intosegments energy wells 204 andbarriers 206 corresponding to thesegments 117 in thenanostructure 115. Theenergy wells 204 may be quantum wells, but that is not a requirement. Thenanostructure 115 has a number ofwell segments 117 a and a number ofbarrier segments 117 b. Well segments are also referenced as W1-Wn. A wellsegment 117 a is defined as asegment 117 that results in anenergy well 204. Abarrier segment 117 b is defined as asegment 117 that results in anenergy barrier 206. Well segment W1 is closest to thewindow 102 of the solar cell where solar radiation is admitted. Comparing thewell segments 117 a with each other, the indium concentration is higher in thewell segments 117 a that are further away from thewindow 102 of the solar cell. - Referring to the band gap diagram 202, higher indium concentration corresponds to a lower band gap in the InGaN. Therefore, the
energy wells 204 further from thewindow 102 have a lower band gap thanenergy wells 204 near thewindow 102. The term “graded energy wells” is used herein to describe a configuration of, in general, decreasing band gaps ofwell segments 117 a in the direction away from thewindow 102 of the solar cell. - In this example, the
barrier segments 117 b have approximately the same indium concentration as each other. Therefore, the “height” of theenergy barriers 206 that corresponds to thebarrier segments 117 b are approximately the same as each other, as depicted in the energy band diagram 202. This results in an approximately level band gap from thewindow 102 to thesubstrate 108 of the solar cell forbarrier segments 117 b. However, this level band gap forbarrier segments 117 b is not required. In one embodiment, the band gap of thebarrier segments 117 b is graded such that the band gap, in general, decreases frombarrier segments 117 b nearer to thewindow 102 to those further from thewindow 102. - Note that for convenience of illustration, the bottom of a
particular energy well 204 is depicted as being substantially flat. In other words, as having substantially uniform band gap. However, effects such as a piezoelectric effect may cause a slope at the bottom ofenergy wells 204. Further, the band gap forbarrier segments 117 b may also have a slope even though the concentration of indium is uniform throughout aparticular barrier segment 117 b. - Because of the configuration of
energy wells 204 andenergy barriers 206, not all of the electrons that are promoted by a photon to the conduction band (or above the conduction band) are able to escape theenergy well 204. The electrons that are promoted to (at least) the conduction band will have a distribution of energy. Some of the electrons will be energetic enough to pass through thebarrier segments 117 b.FIG. 2 shows a thermal energy distribution (E) for electrons in one of theenergy wells 204 a. Electrons having at least as much energy as the conduction band of thebarriers 206 can “escape” the energy well 204 a and migrate out of theactive region 106. Note that due to thermal equilibrium the shape of the thermal distribution (E) may tend to remain the same despite the more energetic photons exiting the energy well 204 a. Electrons with sufficient thermal energy in theother energy wells 204 b-d will also migrate out of theactive region 106. The electrons that exit theenergy wells 204 a-d migrate towards thewindow 102 in an “n-on-p” embodiment due to the electric field generated by the n-p junction. The electrons migrate away from thewindow 102 in a “p-on-n” embodiment due to the electric field generated by the p-n junction. The elevated temperature of solar cell during CPV operation may benefit the operation as thermal energy will increase the number of electrons able to escape wells and be swept away as drift current. - Note that because only electrons having at least the
barrier energy 206 of thebarrier segments 117 b are able to cross abarrier segment 117 b, these “energetic” electrons are not likely to fall into an energy well 204 as they migrate out of theactive region 106 unless energy losses occur due to inelastic scatterings by the semiconductor's scattering centers. Moreover, the band gap of thebarrier segments 117 b may be used as parameter for determining output voltage. - It is not required that each of the
energy wells 204 have a different band gap from each other. In one embodiment, theenergy wells 204 are grouped, as depicted in the conduction energy band diagram 310 ofFIG. 3A . - The width (Ww) of each energy well 204 may be individually configured to fine tune the band gap using quantum confinement effect, as depicted in the conduction energy band diagram 320 of
FIG. 3B . The well width WW may be configured by controlling the length ofwell segments 117 a during nanostructure formation. - The width (Bw) of each
barrier 206 may be individually configured to control tunneling betweenenergy wells 204, as depicted in the conduction energy band diagram 330 ofFIG. 3C . The barrier width Bw may be configured by controlling the length ofbarrier segments 117 b duringnanostructure 115 growth. - Furthermore, the well width may be configured to influence (e.g., reduce) electron-hole recombination rate by affecting piezoelectric field effect due to polarization charges at well-barrier interfaces.
-
Energy wells 204 andbarriers 206 may individually be doped appropriately (undoped, n-type, p-type) to also affect (e.g., reduce) electron-hole recombination rate by affecting the piezoelectric field due to polarization charges at well-barrier interfaces. - In one embodiment, the
barriers 206 are graded, as depicted in the conduction energy band diagram 340 ofFIG. 3D .Barriers 206 can be graded by appropriate selection of the concentration of the band gap altering element duringnanostructure 115 growth. - In one embodiment, the concentration of the band gap altering element changes continuously throughout all, or a portion of, the
active region 106. Thus, there are noenergy wells 204 andbarriers 206 despite the change in concentration of the band gap altering element.FIG. 3E depicts a conduction energy band diagram 350 for an embodiment in which the band gap changes continuously in at least a portion of theactive region 106 due to a continuous change in concentration of the band gap altering element. - In one embodiment, the solar cell device has one or more tunnel junctions.
FIG. 4 illustrates on example threejunction device 400, in accordance with an embodiment of the present invention. In general, thedevice 400 has top contact/window 102,top junction layers 104 a-c,active regions 106 a-c,tunnel junctions 412,substrate 108,bottom contact 110, and electrical leads 112. - The three
active regions 106 a-c are separated bytunnel junctions 412. Further, eachactive region 106 a-c is paired with atop junction layer 104 a-c to form a junction. Each of the threeactive regions 106 a-c may be configured for absorption of photons of different ranges of wavelengths. For example, thedifferent segments 117 inactive region 106 a may be configured to absorb photons from 365 nm to R nm. Inactive region 106 b, thesegments 117 may be configured to absorb photons from R nm to S nm. Inactive region 106 c, thesegments 117 may be configured to absorb photons from S nm to 1700 nm. As previously discussed, the concentration of a band gap altering element (e.g., indium) is selected to achieve the desired wavelength absorption. Further, a band gap energy corresponds to a “characteristic wavelength”, which is equal to the longest wavelength of a photon that can be absorbed. Because thesegments 117 nearest thewindow 102 have the highest band gaps, their characteristic wavelengths are the shortest and thus, “transmit” or “pass” those photons with longer wavelengths. In this manner, thesegments 117 nearest thewindow 102 act as “long-pass filters” for thesegments 117 further away from thewindow 102, and wavelengths of absorbed photons progressively become longer, further away fromwindow 102. - In any of the
active regions segments 117 may act asenergy wells 204 with others acting asenergy barriers 206 with higher band gap thanadjacent segments 117. Theenergy wells 204 may be graded. However, in one embodiment, at least a portion of theactive region 106 has a continuous change in the band gap as depicted inFIG. 3E . Series connection of the three junctions is achieved by twotunnel junctions 412 separating the three junctions. Thetunnel junctions 412 are grown in thedevice 400, in the embodiment depicted inFIG. 4 , so thedevice 400 is monolithic. As an alternative todevice 400 more or feweractive regions 106 andtunnel junctions 412 may be used. - The
device 400 may be an n-on-p device or a p-on-n device. Theactive regions 106 may comprise InGaN, although other materials might be used. The discussion of thetop contact 102,substrate 108, andbottom contact 110 of examplesolar cell 100 inFIG. 1 applies toexample device 400. Thetop junction layers 104 a-c are similar to those in examplesolar cell 100. However, only thetop junction layer 104 a near the top contact/window 102 may be coalesced. Top junction layers 104 b, 104 c are not coalesced. -
FIG. 5 illustrates an example two-junctionsolar cell 500, in accordance with an embodiment of the present invention. Thesolar cell 500 may be fabricated by separately growing two devices and bonding them together. InFIG. 5 , the two devices areupper device 501 andlower device 502.Upper device 501 may be formed by growing nanostructures of InGaN material onsubstrate 108 b. For purposes of illustrationsolar cell 500 will be discussed with respect to a particular n- and p-type doping. However, variations of the doping are possible. Further, InGaN is used for illustration, but other materials may be used. -
Substrate 108 b is transparent to electromagnetic radiation in a region of interest and may be an n-type SiC or ZnO substrate. The region of interest may be the visible and infrared wavelengths, but could extend outside of these wavelengths. - The InGaN material in
device 501 has three regions. Closest to thesubstrate 108 b is an uncoalescedtop junction layer 104, which may have any indium concentration. The doping may be n, n+ or, n++. Theactive region 106 d may be undoped or have p-type doping. Thesegments 117 have different indium concentration from each other such that the target absorption spectrum ranges from about 365 nm to R nm. Thedevice 501 has alower junction layer 512. Thelower junction layer 512 may be coalesced or uncoalesced. The doping of the lower junction layer may be p, p+ or, p++. - The
lower device 502 may be formed by growingnanostructures 115 of InGaN material onsubstrate 108 a.Substrate 108 a does not need to be transparent and may be p-type Si, Ge, SiC, or ZnO. The InGaN material indevice 502 has two regions. Closest to thesubstrate 108 a is theactive region 106 e, which may be undoped or have p-type doping. Thesegments 117 have different indium concentration from each other such that the target absorption spectrum ranges from about R nm to 1700 nm. Thedevice 502 has ajunction layer 514, which completes the n-p junction. Thejunction layer 514 is coalesced, in the embodiment depicted inFIG. 5 . Thus, thejunction layer 514 may be formed by growing nanostructures that coalesce injunction layer 514. The doping may be n, n+ or, n++. - The
upper device 501 may be bonded to thelower device 502 by using atransparent ITO 506 as the bonding material between thedevices - As an alternative to the design of example two device
solar cell 500, three or more devices can be used. An additional transparent ITO is used to bond the additional device to one of the others. With three devices, the target absorption spectrum ranges can be divided into three regions. - In either of the
active regions segments 117 may act asenergy wells 204 with others acting asenergy barriers 206 with higher band gap thanadjacent segments 117. Theenergy wells 204 may be graded. However, in one embodiment, at least a portion of theactive region 106 has a continuous change in the band gap as depicted inFIG. 3E . - In one embodiment, the substrate on which the
nanostructures 115 were grown is etched away.FIG. 6 illustrates an examplesolar cell 600 in which the growth substrate has been etched away, in accordance with an embodiment. In general, the examplesolar cell 600 has a top contact/window 102, atop junction layer 104, anactive region 106 formed ofnanostructures 115, alower junction layer 612, alower contact 614, abase substrate 616, and electrical leads 112. - The
active region 106 andlower junction layer 612 arenanostructures 115 that are grown on a substrate that has been etched away. As an example, thenanostructures 115 may comprise InGaN material. However, a different band gap altering element and a different III-V compound semiconductor may be used. - After the substrate is etched away, the
lower contact 614 andbase substrate 616 are bonded to thenanostructures 115. Thelower contact 614 may be sheet metal for good electrical conduction to thelead 112. Thebase substrate 616 should have good heat conductivity and provides mechanical support. In addition, thebase substrate 616 may be optimized for high reflectivity. - In one embodiment, the example
solar cell 600 is a p-on-n device. Thus, thelower junction 612 may be n-doped, thetop junction layer 104 may be p-doped, and theactive region 106 may be n-doped. However, it is not required that theactive region 106 be doped. Moreover, etching away the substrate may be used with n-on-p, n-i-p, and p-i-n devices. Further, etching away of the growth substrate is not limited to single junction devices. - In
active region 106 of examplesolar cell 600, somesegments 117 may act asenergy wells 204 with others acting asenergy barriers 206 with higher band gap thanadjacent segments 117. Theenergy wells 204 may be graded. However, in one embodiment, at least a portion of theactive region 106 has a continuous change in the band gap as depicted inFIG. 3E . - In one embodiment, the
substrate 108 is made reflective such that photons that are not absorbed in theactive region 106 are reflected back to the active region. For example, referring again toFIG. 1 , the substrate 108 (e.g., Si) used fornanostructure 115 growth may be etched to generate porous Si that diffusely reflects unabsorbed photons back towards theactive region 106. Because making thesubstrate 108 porous may reduce vertical conductivity, thesubstrate 108 may be made partially porous. In one embodiment, thesubstrate 108 is an n-type Si substrate. However, thesubstrate 108 is not limited to Si, or to n-type doping. Making thesubstrate 108 reflective is not limited to single junction devices. - In the foregoing specification, embodiments of the invention have been described with reference to numerous specific details that may vary from implementation to implementation. Thus, the sole and exclusive indicator of what is the invention, and is intended by the applicants to be the invention, is the set of claims that issue from this application, in the specific form in which such claims issue, including any subsequent correction. Any definitions expressly set forth herein for terms contained in such claims shall govern the meaning of such terms as used in the claims. Hence, no limitation, element, property, feature, advantage or attribute that is not expressly recited in a claim should limit the scope of such claim in any way. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense.
Claims (23)
1. A method for forming a solar cell, the method comprising:
growing a plurality of nanostructures that include a III-V compound semiconductor that is present from the bottom to the top of substantially all of the plurality of nanostructures, the nanostructures form at least a portion of an active region of the solar cell, wherein growing the nanostructures comprises:
adjusting concentration of a band gap altering element incorporated into the III-V compound semiconductor in order to configure substantially all of the nanostructures to have a non-uniform concentration of the band gap altering element, wherein substantially all of the nanostructures have a plurality of segments, and wherein each of the segments has a band gap;
wherein the band gap of a particular segment is established by adjusting the concentration of the band gap altering element; and
wherein the adjusting the concentration of a band gap altering element includes adjusting the concentration of the band gap altering element to be non-uniform in the nanostructures to create energy wells of different energy levels and barriers between the energy wells.
2. The method of claim 1 , wherein adjusting concentration of the band gap altering element comprises adjusting the concentration such that energy wells closer to a first side of the active region have higher band gaps than energy wells further from the first side.
3. The method of claim 1 , wherein adjusting concentration of the band gap altering element comprises adjusting the concentration such that band gap of energy wells decreases monotonically from one energy well to another.
4. The method of claim 1 , wherein adjusting concentration of the band gap altering element comprises adjusting the concentration such that barriers between the energy wells have approximately the same band gaps as each other.
5. The method of claim 1 , wherein adjusting concentration of the band gap altering element comprises adjusting the concentration such that barriers between the energy wells have graded band gaps.
6. The method of claim 1 , wherein adjusting concentration of the band gap altering element comprises adjusting the concentration such that barriers between the energy wells that are closer to a first side of the active region have greater band gaps than barriers that are further from the first side.
7. The method of claim 1 , wherein adjusting concentration of the band gap altering element comprises adjusting the concentration such that width of a particular energy well is configured to affect the band gap of the particular energy well by quantum confinement effect.
8. The method of claim 1 , wherein adjusting concentration of the band gap altering element comprises adjusting the concentration such that width of a particular barrier between two of the energy wells is configured to control charge carrier tunneling between the two energy wells.
9. The method of claim 1 , wherein the band gap altering element comprises indium.
10. The method of claim 1 , wherein the band gap altering element comprises aluminum.
11. The method of claim 1 , wherein the III-V compound semiconductor comprises gallium nitride.
12. The method of claim 1 , further comprising forming a layer that is configured to reflect photons that were not absorbed when passing through the active region back into the active region.
13. The method of claim 1 , wherein the barriers have a bandgap that is selected to control output voltage of the solar cell.
14. A method for forming a solar cell, the method comprising;
forming a plurality of nanostructures over a substrate having a conductivity of a first type, the plurality of nanostructures are formed substantially throughout from InxGax−1N, forming the plurality of nanostructures includes adjusting concentration of the indium in the InxGax−1N to create a plurality of segments in substantially all of the nanostructures, wherein each of the segments has a band gap that is established at least in part by the concentration of the indium; and
forming a top junction layer over the plurality of nanostructures, the top junction layer has a conductivity of a second type that is opposite the first type of conductivity;
wherein the concentration of the indium is non-uniform in the plurality of nanostructures to create energy wells of different energy levels and barriers between the energy wells.
15. The method for forming a solar cell of claim 14 , wherein forming the plurality of nanostructures includes doping the plurality of nanostructures substantially throughout with a material having the first type of conductivity.
16. The method for forming a solar cell of claim 14 , wherein forming the plurality of nanostructures includes forming the plurality of nanostructures without intentionally doping the plurality of nanostructures, wherein the solar cell is either a p-i-n structure or an n-i-p structure.
17. The method for forming a solar cell of claim 14 , further comprising forming a window that admits electromagnetic radiation, wherein adjusting concentration of the indium in the InxGax−1N includes adjusting concentration of the indium such that the band gap of the energy wells decreases monotonically from one energy well to the next energy well in a direction away from the window.
18. A method for forming a solar cell, the method comprising:
providing a substrate having a conductivity of a first type;
forming a plurality of nanostructures from a III-V compound semiconductor, each of the a plurality of nanostructures has a bottom and a top;
incorporating a bandgap altering element into the plurality of nanostructures, incorporating the bandgap altering element includes adjusting the concentration of the bandgap altering element to create a plurality of segments in substantially all of the nanostructures, wherein each of the segments has a band gap that is established at least in part by the concentration of the band gap altering element, the adjusting the concentration of the bandgap altering element includes creating energy wells of different energy levels and barriers between the energy wells; and
forming a top junction layer over the plurality of nanostructures, the top junction layer has a conductivity of a second type that is opposite the first type of conductivity.
19. The method for forming a solar cell of claim 18 , wherein forming the plurality of nanostructures includes doping the plurality of nanostructures substantially from the bottoms to the tops of the nanostructures with a material having the first type of conductivity.
20. The method for forming a solar cell of claim 18 , wherein forming the plurality of nanostructures includes forming the plurality of nanostructures without intentionally doping the plurality of nanostructures, wherein the solar cell is either a p-i-n structure or an n-i-p structure.
21. The method for forming a solar cell of claim 18 , wherein a first and a second of the segments correspond to a first and a second energy well, wherein adjusting the concentration of the bandgap altering element includes forming the first and second segments to have different lengths to fine tune the band gap of the first and second energy wells by quantum confinement effect.
22. The method for forming a solar cell of claim 18 , wherein adjusting the concentration of the bandgap altering element includes configuring the width of a particular energy well to influence electron-hole recombination rate by affecting piezoelectric field effect due to polarization charges at well-barrier interfaces.
23. The method for forming a solar cell of claim 18 , further comprising doping the energy wells, doping the barriers or doping both the energy wells and the barriers to influence electron-hole recombination rate by affecting piezoelectric field effect due to polarization charges at an interface between energy wells and adjacent barriers.
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US12/611,483 US20100047957A1 (en) | 2006-12-29 | 2009-11-03 | Method for forming solar cell having active region with nanostructures having energy wells |
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US11/648,059 US7629532B2 (en) | 2006-12-29 | 2006-12-29 | Solar cell having active region with nanostructures having energy wells |
US12/611,483 US20100047957A1 (en) | 2006-12-29 | 2009-11-03 | Method for forming solar cell having active region with nanostructures having energy wells |
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US11/648,059 Division US7629532B2 (en) | 2006-12-29 | 2006-12-29 | Solar cell having active region with nanostructures having energy wells |
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US20100047957A1 true US20100047957A1 (en) | 2010-02-25 |
Family
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Family Applications (2)
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---|---|---|---|
US11/648,059 Active 2028-02-20 US7629532B2 (en) | 2006-12-29 | 2006-12-29 | Solar cell having active region with nanostructures having energy wells |
US12/611,483 Abandoned US20100047957A1 (en) | 2006-12-29 | 2009-11-03 | Method for forming solar cell having active region with nanostructures having energy wells |
Family Applications Before (1)
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US11/648,059 Active 2028-02-20 US7629532B2 (en) | 2006-12-29 | 2006-12-29 | Solar cell having active region with nanostructures having energy wells |
Country Status (5)
Country | Link |
---|---|
US (2) | US7629532B2 (en) |
EP (1) | EP2102913A2 (en) |
KR (1) | KR20090116724A (en) |
CN (1) | CN101589474A (en) |
WO (1) | WO2008083294A2 (en) |
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WO2008083294A3 (en) | 2008-12-31 |
CN101589474A (en) | 2009-11-25 |
US7629532B2 (en) | 2009-12-08 |
US20080156366A1 (en) | 2008-07-03 |
KR20090116724A (en) | 2009-11-11 |
WO2008083294A2 (en) | 2008-07-10 |
EP2102913A2 (en) | 2009-09-23 |
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