US20100197070A1 - Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals - Google Patents
Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals Download PDFInfo
- Publication number
- US20100197070A1 US20100197070A1 US12/669,504 US66950408A US2010197070A1 US 20100197070 A1 US20100197070 A1 US 20100197070A1 US 66950408 A US66950408 A US 66950408A US 2010197070 A1 US2010197070 A1 US 2010197070A1
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- US
- United States
- Prior art keywords
- silicon
- crucible
- solid
- layer
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 260
- 239000010703 silicon Substances 0.000 title claims abstract description 260
- 239000013078 crystal Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000005266 casting Methods 0.000 claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 291
- 239000007787 solid Substances 0.000 claims description 93
- 230000008018 melting Effects 0.000 claims description 47
- 238000002844 melting Methods 0.000 claims description 47
- 239000007788 liquid Substances 0.000 claims description 33
- 239000004020 conductor Substances 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims description 31
- 238000007711 solidification Methods 0.000 claims description 31
- 230000008023 solidification Effects 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000011068 loading method Methods 0.000 claims description 10
- 239000000155 melt Substances 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 230000000284 resting effect Effects 0.000 claims description 3
- 238000001311 chemical methods and process Methods 0.000 claims description 2
- 230000003472 neutralizing effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 126
- 235000012431 wafers Nutrition 0.000 description 47
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
- 229910002804 graphite Inorganic materials 0.000 description 18
- 239000010439 graphite Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000011449 brick Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000005350 fused silica glass Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- -1 square Chemical compound 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011094 fiberboard Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- XHPLNGAABOJCMD-UHFFFAOYSA-N [Ba+2].[O-2].[Y+3] Chemical class [Ba+2].[O-2].[Y+3] XHPLNGAABOJCMD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- VJTAZCKMHINUKO-UHFFFAOYSA-M chloro(2-methoxyethyl)mercury Chemical compound [Cl-].COCC[Hg+] VJTAZCKMHINUKO-UHFFFAOYSA-M 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/067—Boots or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Definitions
- the present invention generally relates to the field of photovoltaics and to methods and apparatuses for manufacturing cast silicon for photovoltaic applications.
- the invention further relates to new forms of cast silicon that can be used to manufacture devices, such as photovoltaic cells and other semiconductor devices.
- the new silicon can have a monocrystalline, near-monocrystalline, bi-crystal, or geometric multicrystalline structure and can be manufactured by a casting process utilizing seed crystals.
- Photovoltaic cells convert light into electric current.
- One of the most important features of a photovoltaic cell is its efficiency in converting light energy into electrical energy.
- photovoltaic cells can be fabricated from a variety of semiconductor materials, silicon is generally used because it is readily available at reasonable cost, and because it has a suitable balance of electrical, physical, and chemical properties for use in fabricating photovoltaic cells.
- silicon feedstock is doped with a dopant having either a positive or negative conductivity type, melted, and then crystallized by either pulling crystallized silicon out of a melt zone into ingots of monocrystalline silicon (via the Czochralski (CZ) or float zone (FZ) methods), or cast into blocks or “bricks” of multi-crystalline silicon or polycrystalline silicon, depending on the grain size of the individual silicon grains.
- CZ Czochralski
- FZ float zone
- the term “monocrystalline silicon” refers to a body of single crystal silicon, having one consistent crystal orientation throughout.
- conventional multi-crystalline silicon refers to crystalline silicon having centimeter scale grain size distribution, with multiple randomly oriented crystals located within a body of multicrystalline silicon.
- geometric multicrystalline silicon refers to crystalline silicon, according to embodiments of the present invention, having a geometrically ordered centimeter scale grain size distribution, with multiple ordered crystals located within a body of multi-crystalline silicon.
- the grains are typically an average of about 0.5 cm to about 5 cm in size, and grain orientation within a body of geometric multi-crystalline silicon is controlled according to predetermined orientations.
- polycrystalline silicon refers to crystalline silicon with micrometer scale grain size and multiple grain orientations located within a given body of crystalline silicon.
- the grains are typically an average of about submicron to about micron in size (e.g., individual grains are not visible to the naked eye), and grain orientation distributed randomly throughout.
- the ingots or blocks are cut into thin substrates, also referred to as wafers, by known slicing or sawing methods. These wafers may then be processed into photovoltaic cells.
- Monocrystalline silicon for use in the manufacture of photovoltaic cells is generally produced by the CZ or FZ methods, both being processes in which a cylindrically shaped boule of crystalline silicon is produced.
- a seed crystal is touched to a pool of molten silicon and the boule is slowly pulled out of the pool while heat is extracted through the solid part of the boule.
- seed crystal refers to a piece of crystalline material that is brought in contact with liquid silicon such that, during solidification, the liquid silicon adapts to the crystallinity of the seed.
- solid material is fed through a melting zone, melted upon entry into one side of the melting zone, and re-solidified on the other side of the melting zone, generally by contacting a seed crystal.
- the block of cast crystalline silicon that results is generally cut into bricks having a cross-section that is the same as or close to the size of the wafer to be used for manufacturing a photovoltaic cell, and the bricks are sawn or otherwise cut into such wafers.
- Multi-crystalline silicon produced in such manner is an agglomeration of crystal grains where, within the wafers made therefrom, the orientation of the grains relative to one another is effectively random.
- Monocrystalline or geometric multicrystalline silicon has specifically chosen grain orientations and (in the latter case) grain boundaries, and can be formed by the new casting techniques disclosed in the above-mentioned patent applications by bringing liquid silicon in contact with a large seed layer that remains partially solid during the process and through which heat is extracted during solidification.
- seed layer refers to a crystal or group of crystals with desired crystal orientations that form a continuous layer. They can be made to conform with one side of a crucible for casting purposes.
- the ingot In order to produce the best quality cast ingots, several conditions should be met. Firstly, as much of the ingot as possible have the desired crystallinity. If the ingot is intended to be monocrystalline, then the entire usable portion of the ingot should be monocrystalline, and likewise for geometric multicrystalline material. Secondly, the silicon should contain as few imperfections as possible. Imperfections can include individual impurities, agglomerates of impurities, intrinsic lattice defects and structural defects in the silicon lattice, such as dislocations and stacking faults. Many of these imperfections can cause a fast recombination of electrical charge carriers in a functioning photovoltaic cell made from crystalline silicon. This can cause a decrease in the efficiency of the cell.
- this invention relates to a method and apparatus of controlling heat flow during the casting of silicon, particularly flow of heat through a seed crystal.
- the silicon melts with a flat interface, but growth occurs with as much curvature as possible, such as to maximize an amount of monocrystalline silicon material.
- the embodiments of this invention balance the needs of melting a feedstock and growing the crystalline material.
- the term “near-monocrystalline silicon” refers to a body of crystalline silicon, having one consistent crystal orientation throughout for greater than 50% by volume of the body, where, for example, such near-monocrystalline silicon may comprise a body of single crystal silicon next to a multicrystalline region, or it may comprise a large, contiguously consistent crystal of silicon that partially or wholly contains smaller crystals of silicon of other crystal orientations, where the smaller crystals do not make up more than 50% of the overall volume.
- the near-monocrystalline silicon may contain smaller crystals which do not make up more than 25% of the overall volume. More preferably, the near-monocrystalline silicon may contain smaller crystals which do not make up more than 10% of the overall volume. Still more preferably, the near-monocrystalline silicon may contain smaller crystals which do not make up more than 5% of the overall volume.
- a method of manufacturing cast silicon comprising: placing a crucible filled with silicon on a layer, the layer comprising: a thermally conducting material in contact with a heat sink, and a thermally insulating area, where a thermally conductive part of the layer is in contact with about 5% to about 99% of a bottom surface of the crucible; and solidifying the silicon by extracting heat through the thermally conducting layer.
- the heat extraction may occur after part or all of the silicon is melted, in order to direct seeded growth by bringing the cast silicon to a first temperature and then cooling it to a second temperature.
- a method of manufacturing cast silicon comprising placing silicon in a crucible having walls tapered inwards towards a center of the crucible, melting the silicon, solidifying the silicon by extraction of heat through a bottom of the crucible, bringing the cast silicon to a first temperature, cooling the silicon down to a second temperature different from the first temperature, extracting the cast silicon from the crucible and then cutting sections from the cast silicon.
- a method of manufacturing cast silicon comprising placing silicon in a crucible having walls tapered outwards away from a center of the crucible, melting the silicon, solidifying the silicon by extraction of heat through a bottom of the crucible, bringing the cast silicon to a first temperature, cooling the silicon down to a second temperature different from the first temperature, extracting the cast silicon from the crucible and then cutting sections from the cast silicon.
- a crucible for the casting of silicon having a bottom surface and a plurality of side walls, wherein at least one of the plurality of side walls tapers inwards toward a center of the crucible at an angle from about 1° to about 25° with respect to a plane perpendicular to a bottom surface of the crucible and viewed in a direction extending upwards from the bottom surface.
- the tapered side wall or walls may reduce the vessel cross-sectional area taken in the direction away from the bottom surface.
- a crucible for the casting of silicon having a bottom surface and a plurality of side walls, wherein at least one of the plurality of side walls tapers outwards from a center of the crucible at an angle greater than about 2°, with respect to a plane perpendicular to a bottom surface of the crucible and viewed in a direction extending upwards from the bottom surface.
- the tapered side wall or walls may increase the vessel cross-sectional area taken in the direction away from the bottom surface.
- a method of manufacturing cast silicon comprising: placing at least one monocrystalline seed crystal having at least about 10 cm by about 10 cm area on a bottom surface of a crucible that rests on a partially insulating base plate; introducing solid or liquid silicon feedstock and partially melting the seed crystal, extracting heat through the seed crystal in such a way that a convex solid boundary increases the cross-sectional area of monocrystalline growth; bringing the silicon to a first temperature and cooling it, preferably uniformly, down to a second temperature; cutting a slab from a side of the cast silicon opposite the seed crystal; cleaning the slab using a chemical process; and using the large slab as a new seed layer for a subsequent casting process.
- a method of manufacturing cast silicon comprising: loading a seed layer of crystalline silicon together with solid silicon feedstock into a crucible having a lid or cover; melting and solidifying the silicon while maintaining part of the seed layer as solid and while flowing at least one of argon and nitrogen gas through at least one hole in the lid or cover while at least another hole exits the gas; and cooling the silicon preferably uniformly.
- a method of manufacturing cast silicon comprising: loading a seed layer of crystalline silicon into a crucible, covering the crucible having a lid; introducing liquid silicon into the crucible, the liquid silicon preferably being superheated; allowing part of the seed layer to melt; solidifying the silicon while flowing at least one of argon and nitrogen gas through at least one hole in the lid while at least one other hole exits the gas; and cooling the silicon.
- a process for manufacturing cast silicon comprising loading a seed layer of crystalline silicon together with solid feedstock; melting the feedstock and part of the seed layer while maintaining a solid/liquid interface that is substantially flat over the entire seed layer; solidifying the silicon by extracting heat through the seed layer while at least initially providing extra heat in a region comprising the edges of the seed layer; bringing the silicon to a first temperature and preferably uniformly cooling the silicon to a second temperature, the heating and cooling preferably being uniform.
- an apparatus for the casting of silicon comprising heaters for surrounding a crucible resting on a heat sink, the heaters being provided for the melting of silicon; a means for controlled extraction of heat through the heat sink; a port for introduction of a gas; and at least one loop of insulated, water cooled tube residing with the primary heaters and for encircling the crucible, wherein the loop can be energized to provide inductive heating at different regions within the crucible.
- FIGS. 1A-1B illustrate an exemplary system where a thermally insulating layer is combined with a thermally conducting layer below a crucible in a casting station, according to an embodiment of the present invention
- FIG. 3 illustrates an example of silicon feedstock loaded into a partially coated crucible, according to an embodiment of the present invention
- FIG. 4 illustrates an example of a method for recycling seed layer material, according to an embodiment of the present invention
- FIG. 5 illustrates an exemplary arrangement of single crystal silicon to form a seed layer, according to an embodiment of the present invention
- FIG. 6 illustrates an exemplary method for creating large single crystal seed layers, according to an embodiment of the present invention
- FIGS. 7A-7B illustrate an exemplary apparatus for casting low carbon monocrystalline or multicrystalline silicon, according to an embodiment of the present invention
- FIG. 8 illustrates an exemplary apparatus for casting monocrystalline or multi-crystalline silicon, according to embodiments of the present invention.
- FIGS. 9A-D illustrate an exemplary system where a thermally insulating layer is combined with a thermally conducting layer in an alternate geometry, according to an embodiment of the present invention.
- the crystallization of molten silicon is conducted by casting processes using seed crystals.
- such casting processes may be implemented so that the size, shape, and orientation of crystal grains in the cast body of crystallized silicon is controlled.
- the term “cast” means that the silicon is formed by cooling molten silicon in a mold or vessel used to hold the molten silicon.
- the silicon can be formed by solidification in a crucible, where solidification is initiated from at least one wall of the crucible, and not through a cooled foreign object drawing silicon out of the crucible.
- the crystallized silicon can be either continuous monocrystalline, or continuous multi-crystalline having controlled grain orientations.
- continuous monocrystalline silicon refers to single crystal silicon, where the body of silicon is one homogeneous body of monocrystalline silicon and not smaller pieces of silicon joined together to form a larger piece of silicon.
- continuous multi-crystalline silicon refers to multi-crystalline silicon where the body of silicon is one homogeneous body of multi-crystalline silicon and not smaller pieces of silicon joined together to form a larger piece of silicon.
- a seed may have a top surface that is parallel to its bottom surface, although this does not have to be the case.
- a seed can be a piece of silicon, varying in size from about 2 mm to about 10 mm across, to about 100 mm to about 1000 mm across.
- the piece of silicon may have a thickness of about 1 mm to about 1000 mm, preferably about 10 mm to about 50 mm.
- a suitable size and shape of the seed may be selected for convenience and tiling. Tiling, which will be described in more detail below, is where silicon seed crystals are arranged in a predetermined geometric orientation or pattern across either the bottom or the sides and bottom surfaces of a crucible.
- Silicon feedstock may then be introduced into the crucible over the seeds, and then the feedstock is melted.
- molten silicon may be poured directly into the crucible and over the seeds.
- the crucible is preferably first brought very close to or up to the melting temperature of silicon, and then the molten silicon is poured in. Consistent with embodiments of the invention, a thin layer of the seeds can be melted before solidification begins.
- the molten silicon is then allowed to cool and crystallize in the presence of the seeds, preferably in a manner such that the cooling of the molten silicon is conducted so that the crystallization of the molten silicon starts at or below the level of the original top of the solid seeds and proceeds away, preferably upwards away, from the seeds.
- This can be accomplished by extracting the heat of fusion through the seed crystals to a heat sink.
- the term “heat sink” refers to a body of material used to extract heat from another body of material.
- a heat sink may extract heat by means of conduction of heat from a higher temperature area to a lower temperature area, by convection with a lower temperature fluid or by direct radiation of energy to a lower temperature object.
- a thermal gradient is generally maintained across a heat sink such that one side is in equilibrium with the object to be cooled while the other exchanges energy with a cooler area.
- the liquid-solid interface between the molten silicon and the crystallized silicon, during melting or solidification need not be maintained substantially flat throughout the casting process. That is, the solid-liquid interface at an edge of the molten silicon is controlled during the cooling so as to move in a direction that increases a distance between the molten silicon and the silicon seed crystal. As the solidification of the molten silicon starts, the solidification front is initially substantially flat, preferably with a strong curvature at the horizontal edges of the growing solid mass of silicon. The shape of the solid-liquid interface thus may have a controlled profile throughout the casting process.
- cast silicon having specific, rather than random, grain boundaries and specific grain sizes can be made. Additionally, by aligning the seeds in a manner such that all seeds are oriented the same relative direction to each other, for example the ( 100 ) pole direction being perpendicular to a bottom of the crucible and the ( 110 ) pole direction at 45° to the sides of a rectangular or square cross-section crucible, large bodies of cast silicon can be obtained that are, or are essentially, monocrystalline silicon in which the pole direction of such cast silicon is the same as that of the seeds. Similarly, other pole directions may be perpendicular to the bottom of the crucible.
- one or more seeds may be arranged so that any common pole direction is perpendicular to a bottom of the crucible.
- seed crystals of two or more different pole directions can be used together to maximize the effectiveness of the crystal growth, creating a volume of silicon as large as possible with the desired crystal orientation.
- the seeds can also be formed by cutting them from a sample of silicon made by a process according to the embodiments of the invention, such that seeds for use in subsequent casting processes can be made from an initial casting process. For example, a smaller piece of dislocation-free seed material can used to grow a large dislocation free single crystal, sufficient to cover the entire bottom of the crucible for use as a new seed crystal layer.
- FIGS. 1A and 1B the cross-section of a casting station hot zone is depicted in FIG. 1A , showing liquid silicon 100 and solid silicon 101 at the end of the melting stage of a seeded casting process.
- the silicon is positioned in a bottomed and walled crucible 110 , which may be, for example, a fused quartz or silica crucible.
- solid silicon 101 in crucible 110 is entirely constituted from a seed layer of silicon previously loaded at the bottom of the crucible.
- Feedstock silicon (not shown) is introduced on top of the seed layer.
- Feedstock silicon can either be loaded as a solid and then melted in the crucible, or melted in a separate container and introduced as a liquid on top of the seeds. In either case, the original silicon seed layer is partially melted and solid silicon 101 is entirely composed of the remainder of the silicon seed layer.
- crucible 110 has a release coating such as one made from silica, silicon nitride, or a liquid encapsulant, to aid in the removal of crystallized silicon from crucible 110 .
- resistive heaters 120 provide the energy to maintain the temperature required to melt silicon, while insulation 130 prevents the escape of heat to an outer chamber (not shown).
- crucible 110 is supported by a number of layers which also serve to conduct heat away from the silicon in a controlled way.
- a heat conducting block 140 radiates heat to a water cooled chamber (not shown), thereby cooling the hot-zone components above it.
- a graphite support plate 142 shown in cross section in FIG. 1A and in three dimensions in FIG. 1B , conducts heat from heat conducting layer 141 , which in turn conducts heat away from crucible 110 and silicon 100 and 101 .
- a thermally insulating layer 150 may surround heat conducting layer 141 , in an exemplary configuration, in order to alter the heat removal path and consequently alter the shape of the solidification front.
- Solid graphite side plates 143 surround crucible 110 and provide structural support to the crucible. Consistent with embodiments of the invention, the casting station may have a graphite support plate 142 , though a tailored heat conduction path controlled by conducting layer 141 and thermally insulating layer 150 is not required.
- graphite side plates 143 may rest on graphite support plate 142 , and conduct heat directly to plate 142 , which may create cold spots at the bottom edges of the crucible.
- the effect of the tailored heat conduction, vis-à-vis layers 141 and 150 can alter the cooling parameters, and, hence, the shape of the liquid/solid interface by, for example, keeping the corners of crucible 110 hotter, resulting in only a small amount of lateral melting.
- solid silicon 101 has a high curvature at its left and right edges due to the heat exchange occurring in materials below crucible 110 . Such a curvature can result in the lateral expansion of the solid and outward growth of a seeded crystal structure.
- crystal growth directions of solid silicon 101 are indicated by black arrows.
- crystal growth of silicon maybe altered by altering the shape of the crucible.
- crystal growth can be accomplished in an outwardly tapered crucible 200 , as shown in FIGS. 2A and 2B , where the curvature of liquid silicon 220 to the solid silicon 221 promotes lateral expansion of the seeded crystal (not shown), whose growth direction is indicated by arrows in FIG. 2B .
- crystal growth can be accomplished in an inwardly tapered crucible 210 , as shown in FIGS. 2C and 2D , which, like crucible 200 in FIG.
- the tapered shape of undesirable silicon 223 on a side wall of the cast silicon is due to the extra time that the silicon at the bottom of the crucible spends at a high temperature state during solidification and crystal growth compared with the silicon at the top of the ingot, which is cooled more quickly.
- FIG. 3 illustrates a cross-section of silicon (feedstock 300 and crystalline seeds 301 ) loaded into crucible 310 for casting.
- Release coating 320 such as silicon nitride or silicon carbide, may be applied to areas of crucible 310 where feedstock 300 contacts crucible 310 , which corresponds to areas of silicon 300 that will become completely melted during casting. No coating has been applied below crystalline seeds 301 . Seeds 301 will not be completely melted and thus will not adhere to crucible 110 .
- FIG. 4 illustrates a process for the reuse of a crystalline silicon seed layer.
- cast ingot 400 grown from seed layer 401 is first sliced along the dotted lines to remove a slab of material containing seed layer 401 .
- the slab of material is then trimmed at the dotted edges to remove excess material that might interfere with its placement in another crucible.
- Trimmed slab 402 having been trimmed to the size and shape of original seed layer 401 , is then treated, potentially with other similar pieces of silicon, in a container 410 , such as a tank or a tub containing a suitable liquid or other material, to remove contaminants and debris from layer 401 (and possibly other pieces of silicon) before being placed in a new crucible 420 for use as a seed layer in a subsequent casting process.
- a container 410 such as a tank or a tub containing a suitable liquid or other material
- FIG. 5 illustrates an exemplary arrangement of single crystal silicon pieces arranged to form a seed layer.
- the ( 001 ) crystal orientation has been shown to have advantageous properties for the manufacture of silicon solar cells.
- ( 001 ) silicon may be chemically etched in such a way as to produce a pattern pyramids covering its entire surface, which can improve the light-trapping ability of the silicon by both decreasing reflection and increasing the path length of light in the material. Chemical etching may be accomplished by known methods. However, the casting of ( 001 ) silicon is made difficult by its tendency to grow grain boundaries at acute angles to its ( 001 ) pole direction when located next to a multicrystalline region of silicon.
- the majority of a resulting cast ingot (not shown) will be composed of ( 001 ) silicon, and the competitively favored ( 111 ) grains grown from silicon 501 will limit the growth of multicrystalline silicon in the region occupied by ( 001 ) silicon over silicon 500 .
- silicon crystal grains produced by casting a body of multi-crystalline silicon may be grown in a columnar manner. Further, such crystal grains may have a cross section that is, or is close to, the shape of the seed from which it is formed, instead of having an ( 001 ) cross-sectional area that shrinks as solidification proceeds.
- the grain boundary junctions only have three grain boundaries meeting at a corner, a condition met in the arrangement shown in FIG. 5 .
- the area of the thermally conducting parts 620 should preferably be about the same shape of bottom of crucible 610 , having a lateral area from about 50% to about 150% that of seed crystal 601 .
- heat is extracted through thermally conducting area 620 to a support plate 621 , while heat is prevented from passing through thermally insulating layer 630 .
- Heat is conducted out through thermally conducting area 620 even during the melting phase of casting, in order to prevent the complete melting of seed crystal 601 .
- insulating layer 630 helps control the shape of solid silicon 603 during nucleation and growth, as well as the direction of solidification, indicated by arrows in FIG. 6 .
- the strong curvature in the solidification surface causes an outward growth of solid silicon 603 , while multicrystalline regions 605 are minimized.
- horizontal layers may be cut (dashed lines) from the upper parts of the ingot to be used as new seed slabs 606 .
- Slabs 606 can be cleaned, trimmed, and used as a complete seed layer for a new ingot in a new crucible 610 , or as a starting point for an even larger single crystal, again using the process just described.
- FIGS. 7A and 7B are depictions of the cross-section of an apparatus for the casting of low carbon monocrystalline or multicrystalline silicon in a seeded ingot.
- seed crystal 700 is loaded together with feedstock 701 in crucible 710 located in a furnace hot zone (unlabeled).
- Crucible 710 though illustrated as covered with ceramic lid 711 (also shown in FIG. 7B ), may be uncovered and completely open to the surrounding atmosphere.
- carbon can be incorporated into an ingot from detached pieces of graphite insulation 720 which may fall into crucible 710 , or by a gas phase reaction where oxygen from crucible 710 dissolves into the silicon melt and then evaporates as SiO molecules (not shown). These molecules can adhere to graphite parts 720 , 750 , 760 of the furnace and react via the reaction SiO+2C ⁇ SiC+CO.
- Ceramic lid 711 shown in FIG. 7 B
- process gas 730 which may be, for example, argon
- Ceramic lid 711 can be made of a number of materials including, for example, fused silica, quartz, silicon carbide, silicon nitride, and the like. It is desirable for the design that a fresh supply of an inert gas, such as argon, come in through channel 740 and exit through another channel (not shown) in order to prevent the above-described carbon gas reaction.
- FIG. 8 illustrates an apparatus consistent with embodiments of this invention for modifying the shape of the solid-liquid interface during casting.
- primary heaters 820 and an additional heater 840 are placed in the hot zone (shown surrounded by insulation 831 ) of a casting station to introduce targeted heating to material 800 , 801 .
- Liquid material 800 on top of solid seed material 801 has an interface that is curved at the edges, near the side walls of crucible 810 .
- Primary heaters 820 together with primary heat sink 860 normally work to produce a substantially flat solid-liquid interface (not shown).
- additional heater 840 couples an electric current directly to material 800 , 801 , introducing inductive heating to the edges of the material 800 , 801 near the walls of crucible 810 , and thereby melts solid material 801 in its vicinity.
- Additional heater 840 is a coil of conductive metal, which may be, for example, copper, that is cooled with circulating liquid 850 and thermally insulated from primary heaters 820 by surrounding layer 830 .
- Additional heater 840 may be a single turn coil surrounding crucible 810 in a loop, as illustrated in FIG. 8 , or it may have multiple loops forming a helix having any desired spacing between loops constituting the helix.
- Additional heater 840 may also be configured so that it can move relative to the walls of crucible 810 in order to affect the solid-liquid interface (not shown).
- Additional heater 840 operates by electrical current flowing through the copper pipe while the water cools it so the current through the pipe forms a strong magnetic field which couples with the liquid silicon, inducing a corresponding current in the silicon. Resistive heat from the current in and/or through the silicon provides the heating action in a localized way and/or manner.
- resistive heaters could be used as additional heaters 840 , but resistive heaters may not be as efficient in targeting the heat application to a specific volume of material, such as material 800 , 801 .
- additional heater 840 would only be activated near the end of the melting cycle, so as not to overly melt seed material 801 .
- Additional heater 840 would continue to apply heat to crucible 810 through at least about the first 20% of the solidification process. Additional heater 840 may also continue to apply heat to crucible 810 through the entire solidification process until implementation of the cooling stage.
- embodiments of the invention can be used to produce large bodies of monocrystalline silicon, near-monocrystalline silicon, bi-crystal silicon, or geometric multi-crystalline silicon, by a simple and cost-effective casting process.
- the silicon feedstock used in processes consistent with embodiments of the invention, and thus the silicon produced can contain one or more dopants selected from a list including: boron, aluminum, lithium, gallium, phosphorus, antimony, arsenic, and bismuth.
- the total amount of such dopant or dopants can be about 0.01 parts per million (ppm) by atomic % (ppma) to about 2 ppma.
- the amount of dopant or dopants in the silicon is an amount such that a wafer made from the silicon has a resistivity of about 0.1 to about 50 ohm-cm, preferably of about 0.5 to about 5.0 ohm-cm.
- other materials having a suitable liquid phase can be cast using the processes and apparatuses disclosed here.
- germanium, gallium arsenide, silicon germanium, sapphire, and a number of other III-V or II-VI materials, as well as metals and alloys could be cast according to embodiments of the present invention.
- suitable insulating materials for the thermally insulating area may include carbon fiber insulation board, carbon bonded carbon fiber (CBCF), alumina fiber, silica fiber, fused silica, fused quartz, radiation reflector, carbon fiber composite, and or any other substance having a relatively high thermal conductivity and a stability at the operating temperatures of the casting processes.
- CBCF carbon bonded carbon fiber
- alumina fiber silica fiber
- fused silica fused quartz
- radiation reflector carbon fiber composite
- any other substance having a relatively high thermal conductivity and a stability at the operating temperatures of the casting processes may include carbon fiber insulation board, carbon bonded carbon fiber (CBCF), alumina fiber, silica fiber, fused silica, fused quartz, radiation reflector, carbon fiber composite, and or any other substance having a relatively high thermal conductivity and a stability at the operating temperatures of the casting processes.
- suitable conducting materials for the thermally conducting material may include graphite, high temperature metals, high temperature alloys, tungsten, molybdenum, tantalum, silicon carbide, ceramics with sufficient thermal conductivity and/or any other substance having a lower thermal conductivity than the insulating material and a stability at operating temperatures of the casting processes.
- materials in the layer include a ratio of thermal conductivities of at least about 20:1 (conductor/insulator), desirably at least about 50:1 and more desirably at least about 100:1.
- thermal conductivities of at least about 20:1 (conductor/insulator), desirably at least about 50:1 and more desirably at least about 100:1.
- graphite has a thermal conductivity of 48 W/m/K conductivity while CBCF has a thermal conductivity of 0.7 W/m/K, resulting in a ratio of about 68:1.
- the same materials have a ratio of about 260:1.
- the thermal conducting material is framed by the thermally insulating area, such as to form a square and/or a rectangular shape.
- a conduction window is at least generally congruent and/or conesponds with a shape of the seed crystal arrangement.
- extra cooling area is applied in the corners because they are heated from two sides.
- FIG. 9A shows thermally conducting layer 141 with a contoured thermally insulating layer and/or area 150 , such as a width of insulating layer 150 in a middle of a side is about double a width of insulating layer 150 in a corner.
- a method of shaping the thermal conducting material and/or the thermal insulating material includes the use of saws, routers and/or any other suitable device. Any suitable configuration of the thermal conducting material and/or the thermal insulating material is possible, such as including lips, ledges, interlocking pieces, chamfers, rounded corners, and the like.
- a solid perimeter of the partially melted seed crystal remains roughly square.
- Any suitable ratio of an area of a conducting window to a seed crystal area is possible, such as from about 0.5 to about 2.0, desirably about 1.0, and even more desirably about 0.9 to about 1.1.
- the additional heater and/or the water tube heater is movable relative the a height of the crucible, such as to apply localized heat to the silicon during solidification and adjust upwards and/or downwards with respect to the solid-liquid interface.
- This dynamic capability allows for flat melt/solid interface shapes during melting, with control of heat input during solidification, such as to keep the walls warm and minimize growth of multicrystalline material, while maximizing growth of the desired monocrystalline silicon, near-monocrystalline silicon, and/or geometric multicrystalline silicon.
- dynamic capabilities allow the apparatus to vary the heat flow, such as in the melting segment and in the growth segments.
- the insulating area may be increased and/or decreased by inserting and/or removing the thermally insulating area from under the crucible and/or support walls, for example.
- the layer may include markings, notches, pegs and/or any other suitable devices to aid in positioning various components.
- the static insulation balances between the needs and/or characteristics in melting and in growth.
- the invention includes a method of manufacturing cast silicon, comprising placing a crucible on a layer.
- the layer comprising a thermally conducting material, a heat sink, and a thermally insulating area, where a thermally conductive part of the layer contacts with a portion of a bottom surface of the crucible.
- the method further comprises placing at least one seed crystal on a bottom of the crucible, placing molten silicon in contact with the at least one seed crystal, and forming a solid body of silicon by extracting heat through the thermally conducting material.
- the method further includes forming a portion of the solid body to include the at least one seed crystal.
- the invention includes a method of manufacturing a solar cell comprising providing a solid body of cast silicon, slicing the solid body of cast silicon to form at least one wafer, forming a p-n junction by doping a surface of the at least one wafer, and forming a surface neutralizing layer and/or a back surface field and forming electrically conductive contacts on at least one surface of the wafer.
- a heat flux through the layer changes from the step of melting the silicon to the step of forming a solid body, such as to provide asymmetric melting and optimize the casting process.
- a minimum heat transfer to the heat sink occurs during melting, such as is barely sufficient for retaining solid silicon seed material on the crucible bottom.
- the area of heat transfer is as wide as possible to encourage a flat melt/solid interface.
- the thermally insulating area is increased to at least partially isolate the graphite support walls and the side walls of the crucible from the thermally conducting material and/or the heat sink. The effect of this arrangement is to keep the sides warm and maintain a domed melt/solid interface, minimizing growth of multicrystalline silicon from the sidewalls.
- the step of extracting heat expands a lateral area of the seeded crystal during solidification.
- the embodiment may further include placing a solid silicon feedstock in the crucible on top of the at least one seed crystal and melting the solid silicon feedstock while cooling the bottom of the crucible to maintain the at least one seed crystal in an at least partially solid state.
- the step of placing molten silicon further includes melting a silicon feedstock in a melt container separate from the crucible, heating the crucible to melting temperature of silicon, controlling heating so that the at least one seed crystal in the crucible does not melt completely, and transferring the molten silicon from the melt container into the crucible.
- the thermally conducting material contacts between about 5% to about 99% of the bottom surface area of the crucible, and desirably at least about 90%.
- the thermally conducting material corresponds to a size and a shape of the at least one seed crystal within the crucible, such as having a ratio of an area of the thermal conducting material to an area of the seed crystal from about 0.5 to about 2.0, and desirably from about 0.9 to about 1.
- the method of manufacture may further include reducing and/or enlarging the thermally conducting material and//or thermally conducting area in contact with a crucible bottom by adding and/or removing at least a portion of the thermally insulating area, for example.
- the heat sink comprises a radiative heat sink, radiating heat to walls of a water-cooled vessel.
- the thermally insulating area forms a perimeter or a border around the thermally conducting material.
- the perimeter comprises a contoured shape wider in a middle of a side of the layer than in corners of the layer.
- the perimeter may thermally isolate graphite side support walls for the crucible from the heat sink, such as to reduce cooling and slow multicrystalline growth from the walls.
- the perimeter may sometimes be referred to as a thermal ring.
- the invention includes an apparatus for casting of silicon comprising optionally a crucible, optionally at least one seed crystal on a bottom of the crucible, resistive heaters in thermal communication with the crucible, and a layer.
- the layer comprises a thermally conducting material, a heat sink, and a thermally insulating area, wherein a thermally conductive part of the layer is for contact with a portion of a bottom surface of the crucible on a side and the heat sink on an opposite side.
- the thermally insulating area forms a perimeter around the thermally conducting material.
- the thermally insulating area is movable, such as comprising four or more discrete pads or blocks, so that the thermally insulating area increases, decreases and/or changes heat transferred through the layer by moving with respect to the thermally conducting material.
- a ratio of thermal conductivities of the thermally conducting material to the thermally insulating area is at least about 20:1. In other embodiments, a ratio of an area of the thermal conducting material to an area of the seed crystal is from about 0.5 to about 2.0.
- the invention also may include a process for manufacturing cast silicon comprising the steps of loading a seed layer of crystalline silicon together with a solid feedstock, melting the solid feedstock and part of the seed layer by maintaining a solid/liquid interface essentially flat over the center of the seed layer, but convex in the solid portion at the edges of the seed layer, forming a solid body of silicon by extracting heat through the seed layer while maintaining the solid/liquid interface essentially flat over the center of the seed layer, but convex in the solid portion at the edges of the seed layer, bringing the solid body to a first temperature, and cooling the solid body to a second temperature.
- the first temperature such as a range of between about 1410° C. and about 1300° C. usually includes a temperature gradient across and/or through the solid body.
- the second temperature such as about 1350° C. on average usually includes a reduced temperature gradient and/or a uniform temperature profile across and/or through the solid body.
- the reducing the temperature gradient may be referred to sometimes as annealing in the context of this disclosure. Annealing may include closing up the insulation, for example.
- the invention also may include a method for manufacturing cast silicon comprising loading a seed layer of crystalline silicon together with a solid feedstock, melting the solid feedstock and part of the seed layer by maintaining a solid/liquid interface substantially flat over the entire seed layer, forming a solid body of silicon by extracting heat through the seed layer while at least initially providing extra heat in the local vicinity of at least one edge of the seed layer, bringing the solid body to a first temperature, and cooling the solid body to a second temperature.
- the invention includes an apparatus for casting silicon comprising at least one primary resistive heater for melting of silicon for surrounding a crucible resting on a heat sink, a means for the controlled extraction of heat through the heat sink, a port for the introduction of a gas; and an additional heater for encircling the crucible to provide inductive heating at different regions within the crucible.
- the additional heater comprises one loop of a thermally insulated, water cooled, electrically conductive tube residing with the at least one primary resistive heater.
- the additional heater moves relative to walls of the crucible.
- the apparatus may also include at least one seed crystal on a bottom of the crucible.
- Crucible preparation A crucible was placed on a supporting structure consisting of two layers.
- the bottom layer of the supporting structure is a solid isomolded graphite plate measuring 80 cm by 80 cm by 2.5 cm which supported a composite layer.
- the upper composite layer had an inner region that was a thermally conducting isomolded graphite plate measuring 60 cm by 60 cm by 1.2 cm, and was surrounded on all sides by a 10 cm perimeter of thermally insulating graphite fiber board of 1.2 cm thickness. In this way, the composite layer completely covered the bottom layer.
- Seed preparation A boule of pure Czochralski (CZ) silicon (monocrystalline) obtained from MEMC, Inc. and having 0.3 ppma of boron, was cut down along its length using a diamond coated band saw so that it had a square cross section measuring from 140 mm per side. The resulting block of monocrystalline silicon was cut through its cross section using the same saw into slabs having a thickness of about 2 cm to about 3 cm. These slabs were used as monocrystalline silicon seed crystals, or “seeds.” The ( 100 ) crystallographic pole orientation of the silicon boule was maintained.
- CZ Czochralski
- the resulting single crystal silicon slabs were then arranged in the bottom of a quartz crucible so that the ( 100 ) direction of the slabs faced up, and the ( 110 ) direction was kept parallel to one side of the crucible.
- the quartz crucible had a square cross section with 68 cm on a side and a depth of about 40 cm.
- the slabs were arranged in the bottom of the crucible with their long dimension parallel to the bottom of the crucible and their sides touching to form a single, complete layer of such slabs on the bottom of the crucible.
- This configuration caused the melting to proceed in a top-down direction towards the bottom of the crucible.
- the passive cooling through the bottom caused the seed crystals to be maintained in solid state at the melting temperature, as was monitored by a thermocouple.
- the extent of melting was measured by a quartz dip rod that was lowered into the melt every ten minutes.
- the dip rod height was compared with a measurement taken on an empty crucible in the station to determine the height of the remaining solid material.
- the heating power was dropped to a temperature setting of 1500° C., while the radiation from the bottom was increased by opening the insulation to 12 cm.
- Example 2 Seeding was accomplished as in Example 1, and an ingot was cast containing a large monocrystalline volume. After cooling, the ingot was stood on its side and loaded into a band saw with fixed diamond abrasive for cutting. The bottom of the ingot was cut off as a single layer with a thickness of 2 cm. This layer was then fixed horizontally on a cutting table. In the same band saw, the edges of the layer were trimmed such that approximately 1.5 cm was removed from each side. The slab was then sandblasted to remove glue and foreign materials, after which it was etched in a hot sodium hydroxide bath, rinsed, and dipped in a HCl bath to remove metals. The slab was then placed on the bottom of a standard crucible of the same size as the previous ingot. Silicon feedstock was loaded to a total mass of 265 kg and the casting process was repeated, producing a second seeded ingot.
- a seed layer was prepared, starting with 18 kg of square, ( 100 ), plates used to line the bottom of a crucible, providing a coverage area of 58 by 58 cm and a thickness ranging from 2-3 cm. These plates were placed together into a larger square that was centered in the crucible. Next, this square was surrounded by a 2 cm thick layer of ( 111 ) oriented seed crystals, making the total seed layer a 63 cm by 63 cm square.
- Casting The crucible containing the seeds was filled with silicon to a total mass of 265 kg and placed in a casting station. Casting was performed as in Example 1, monitoring the process to assure that the seed layer remained intact through the end of melt and beginning of solidification. The resulting ingot was cut into a 5 ⁇ 5 grid of 12.5 cm bricks. Optical inspection of the crystal structure of the bricks showed that the ( 111 ) crystals acted as a buffer layer, preventing the ingress of randomly nucleated grains into the ( 100 ) volume.
- Crucible preparation A standard 69 cm 2 crucible was placed on a support structure composed of two layers. The layers were composed as in Example 1 except that the dimensions of the composite layer were different. The bottom solid graphite layer had dimensions of 80 ⁇ 80 ⁇ 2.5 cm 3 as before, but the heat conducting portion of the composite layer measured only 20 ⁇ 20 ⁇ 1.2 cm 3 , centered on top of the bottom layer. The remainder of the bottom layer was covered with heat insulating graphite fiber board.
- Seed preparation A single piece of ( 100 )-oriented single crystal silicon with a size of 21 cm by 21 cm by 2 cm was centered in the bottom of the crucible. The crucible was then filled with a balance of silicon feedstock to a total mass of 265 kg.
- Crucible preparation A standard 69 cm 2 crucible was placed on a graphite support plate and loaded with a seed layer, feedstock and dopant as in Example 1, except that the feedstock contained no silicon recycled from previous ingots. A fused silica lid that had dimensions of 69 ⁇ 69 ⁇ 12 cm 3 was then placed on the crucible. A casting station was modified such that a telescoping tube was attached to the hole in the top insulation where the process gas is introduced. The charge was then loaded into the station and raised up to engage the telescope. The casting station was run using an altered recipe to allow better gas control and altered solidification settings to compensate for the effects of the crucible lid. The resulting ingot was measured to have 1/10 th of the carbon concentration found in a typical ingot, and additionally had a mirror-like top surface and fewer included foreign particles than typical ingots.
- wafers made from the silicon consistent with embodiments of the invention are suitably thin and can be used in photovoltaic cells.
- wafers can be about 10 microns thick to about 300 microns thick.
- the wafers used in the photovoltaic cells preferably have a diffusion length (L p ) that is greater than the wafer thickness (t).
- L p diffusion length
- the ratio of L p to t is suitably at least 0.5. It can, for example, be at least about 1.1, or at least about 2.
- the diffusion length is the average distance that minority carriers (such as electrons in p-type material) can diffuse before recombining with the majority carriers (holes in p-type material).
- the wafer can be etched to form an anisotropically textured surface by treating the wafer in an aqueous solution of a base, such as sodium hydroxide, at an elevated temperature, for example about 70° C. to about 90° C., for about 10 to about 120 minutes.
- a base such as sodium hydroxide
- the aqueous solution may contain an alcohol, such as isopropanol.
- the wafer is exposed on one side to a suitable n-dopant to form an emitter layer and a p-n junction on the front, or light-receiving side of the wafer.
- the n-type layer or emitter layer is formed by first depositing the n-dopant onto the front surface of the p-type wafer using techniques commonly employed in the art such as chemical or physical deposition and, after such deposition, the n-dopant, for example, phosphorus, is driven into the front surface of the silicon wafer to further diffuse the n-dopant into the wafer surface.
- This “drive-in” step is commonly accomplished by exposing the wafer to high temperatures. A p-n junction is thereby formed at the boundary region between the n-type layer and the p-type silicon wafer substrate.
- the wafer surface, prior to the phosphorus or other doping to form the emitter layer, can be textured.
- an anti-reflective coating such as silicon nitride, is typically applied to the front of the wafer, sometimes providing simultaneous surface and or bulk passivation.
- the photovoltaic cell is typically provided with a conductive front electrical contact on the front face of the wafer and a conductive back electrical contact on the back face of the wafer, although both contacts can be on the back of the wafer.
- Such contacts are typically made of one or more highly electrically conducting metals and are, therefore, typically opaque.
- solar cells consistent with the embodiments described above may comprise a wafer sliced from a body of continuous monocrystalline silicon being substantially free of radially-distributed defects, the body having at least two dimensions each being at least about 35 cm, a p-n junction in the wafer, an anti-reflective coating on a surface of the wafer; and a plurality of electrically conductive contacts on at least one surface of the wafer, wherein the body is substantially free of swirl defects and substantially free of oxygen-induced stacking fault defects.
- solar cells consistent with the embodiments described above may comprise a wafer sliced from a body of continuous multi-crystalline silicon being substantially free of radially-distributed defects, the body having a predetermined arrangement of grain orientations with a common pole direction being perpendicular to a surface of the body, the body further having at least two dimensions each being at least about 10 cm, a p-n junction in the wafer; an anti-reflective coating on a surface of the wafer, and a plurality of electrically conductive contacts on at least one surface of the wafer, wherein the multi-crystalline silicon includes silicon grains having an average grain boundary length of about 0.5 cm to about 30 cm, and wherein the body is substantially free of swirl defects and substantially free of oxygen-induced stacking fault defects.
Abstract
Description
- This application claims the benefit of U.S. Provisional Application No. 60/951,155, filed Jul. 20, 2007. The entire disclosure of U.S. Provisional Application No. 60/951,155 is hereby incorporated by reference into this specification.
- This application was made with U.S. Government support under Subcontract No.: ZAZ-6-33628-11 under prime contract with the National Renewable Energy Laboratory awarded by the Department of Energy. The Government has certain rights in this invention.
- 1. Technical Field
- The present invention generally relates to the field of photovoltaics and to methods and apparatuses for manufacturing cast silicon for photovoltaic applications. The invention further relates to new forms of cast silicon that can be used to manufacture devices, such as photovoltaic cells and other semiconductor devices. The new silicon can have a monocrystalline, near-monocrystalline, bi-crystal, or geometric multicrystalline structure and can be manufactured by a casting process utilizing seed crystals.
- 2. Background Information
- Photovoltaic cells convert light into electric current. One of the most important features of a photovoltaic cell is its efficiency in converting light energy into electrical energy. Although photovoltaic cells can be fabricated from a variety of semiconductor materials, silicon is generally used because it is readily available at reasonable cost, and because it has a suitable balance of electrical, physical, and chemical properties for use in fabricating photovoltaic cells.
- In a known procedure for the manufacture of photovoltaic cells, silicon feedstock is doped with a dopant having either a positive or negative conductivity type, melted, and then crystallized by either pulling crystallized silicon out of a melt zone into ingots of monocrystalline silicon (via the Czochralski (CZ) or float zone (FZ) methods), or cast into blocks or “bricks” of multi-crystalline silicon or polycrystalline silicon, depending on the grain size of the individual silicon grains. As used herein, the term “monocrystalline silicon” refers to a body of single crystal silicon, having one consistent crystal orientation throughout. Further, conventional multi-crystalline silicon refers to crystalline silicon having centimeter scale grain size distribution, with multiple randomly oriented crystals located within a body of multicrystalline silicon. As used herein, however, the term “geometrically ordered multicrystalline silicon” (hereinafter abbreviated as “geometric multicrystalline silicon”) refers to crystalline silicon, according to embodiments of the present invention, having a geometrically ordered centimeter scale grain size distribution, with multiple ordered crystals located within a body of multi-crystalline silicon. For example, in geometric multi-crystalline silicon, the grains are typically an average of about 0.5 cm to about 5 cm in size, and grain orientation within a body of geometric multi-crystalline silicon is controlled according to predetermined orientations. Further, as used herein, the term “polycrystalline silicon” refers to crystalline silicon with micrometer scale grain size and multiple grain orientations located within a given body of crystalline silicon. For example, the grains are typically an average of about submicron to about micron in size (e.g., individual grains are not visible to the naked eye), and grain orientation distributed randomly throughout. In the procedure described above, the ingots or blocks are cut into thin substrates, also referred to as wafers, by known slicing or sawing methods. These wafers may then be processed into photovoltaic cells.
- Monocrystalline silicon for use in the manufacture of photovoltaic cells is generally produced by the CZ or FZ methods, both being processes in which a cylindrically shaped boule of crystalline silicon is produced. For a CZ process, a seed crystal is touched to a pool of molten silicon and the boule is slowly pulled out of the pool while heat is extracted through the solid part of the boule. As used herein, the term “seed crystal” refers to a piece of crystalline material that is brought in contact with liquid silicon such that, during solidification, the liquid silicon adapts to the crystallinity of the seed. For a FZ process, solid material is fed through a melting zone, melted upon entry into one side of the melting zone, and re-solidified on the other side of the melting zone, generally by contacting a seed crystal.
- Recently, a new technique for producing monocrystalline or geometric multicrystalline material in a casting station has been invented, as disclosed in U.S. patent application Ser. Nos.: 11/624,365 and 11/624,411 and published as U.S. Patent Application Publication Nos.: 20070169684A1 and 20070169685A1, filed Jan. 18, 2007. Casting processes for preparing multicrystalline silicon ingots are known in the art of photovoltaic technology. Briefly, in such processes, molten silicon is contained in a crucible, such as a quartz crucible, and is cooled in a controlled manner to permit the crystallization of the silicon contained therein. The block of cast crystalline silicon that results is generally cut into bricks having a cross-section that is the same as or close to the size of the wafer to be used for manufacturing a photovoltaic cell, and the bricks are sawn or otherwise cut into such wafers. Multi-crystalline silicon produced in such manner is an agglomeration of crystal grains where, within the wafers made therefrom, the orientation of the grains relative to one another is effectively random. Monocrystalline or geometric multicrystalline silicon has specifically chosen grain orientations and (in the latter case) grain boundaries, and can be formed by the new casting techniques disclosed in the above-mentioned patent applications by bringing liquid silicon in contact with a large seed layer that remains partially solid during the process and through which heat is extracted during solidification. As used herein, the term ‘seed layer’ refers to a crystal or group of crystals with desired crystal orientations that form a continuous layer. They can be made to conform with one side of a crucible for casting purposes.
- In order to produce the best quality cast ingots, several conditions should be met. Firstly, as much of the ingot as possible have the desired crystallinity. If the ingot is intended to be monocrystalline, then the entire usable portion of the ingot should be monocrystalline, and likewise for geometric multicrystalline material. Secondly, the silicon should contain as few imperfections as possible. Imperfections can include individual impurities, agglomerates of impurities, intrinsic lattice defects and structural defects in the silicon lattice, such as dislocations and stacking faults. Many of these imperfections can cause a fast recombination of electrical charge carriers in a functioning photovoltaic cell made from crystalline silicon. This can cause a decrease in the efficiency of the cell.
- Many years of development have resulted in a minimal amount of imperfections in well-grown CZ and FZ silicon. Dislocation free single crystals can be achieved by first growing a thin neck where all dislocations incorporated at the seed are allowed to grow out. The incorporation of inclusions and secondary phases (for example silicon nitride, silicon oxide or silicon carbide particles) is avoided by maintaining a counter-rotation of the seed crystal relative to the melt. Oxygen incorporation can be minimized using FZ or Magnetic CZ techniques as is known in the industry. Metallic impurities are generally minimized by being left in the potscrap or the tang end after the boule is brought to an end.
- According to some embodiments, this invention relates to a method and apparatus of controlling heat flow during the casting of silicon, particularly flow of heat through a seed crystal. Desirably, the silicon melts with a flat interface, but growth occurs with as much curvature as possible, such as to maximize an amount of monocrystalline silicon material. The embodiments of this invention balance the needs of melting a feedstock and growing the crystalline material.
- During the melting steps, heat can be conducted through the seed crystal to ensure melting of the feedstock while maintaining at least a portion of the seed crystal as a solid to initiate crystal growth orientation during the solidification steps. During the solidification steps, it is desirable to reduce and/or prevent heat loss through walls of a crucible, such as to minimize an amount of multicrystalline material produced. Since the bottom of the crucible is in thermal communication with a heat sink and the material for the crucible typically includes a higher thermal conductivity than molten silicon, the sides of the crucible cool as well. Surprisingly and unexpectedly, a configuration of a thermally conducting material and a thermally insulating material placed under the crucible allows control of heat flow to improve solidification by increasing an amount of monocrystalline silicon produced from the seed crystals.
- As used herein, the term “near-monocrystalline silicon” refers to a body of crystalline silicon, having one consistent crystal orientation throughout for greater than 50% by volume of the body, where, for example, such near-monocrystalline silicon may comprise a body of single crystal silicon next to a multicrystalline region, or it may comprise a large, contiguously consistent crystal of silicon that partially or wholly contains smaller crystals of silicon of other crystal orientations, where the smaller crystals do not make up more than 50% of the overall volume. Preferably, the near-monocrystalline silicon may contain smaller crystals which do not make up more than 25% of the overall volume. More preferably, the near-monocrystalline silicon may contain smaller crystals which do not make up more than 10% of the overall volume. Still more preferably, the near-monocrystalline silicon may contain smaller crystals which do not make up more than 5% of the overall volume.
- As used herein, the term “bi-crystal silicon” refers to a body of silicon, having one consistent crystal orientation throughout for greater than or equal to 50% by volume of the body, and another consistent crystal orientation for the remainder of the volume of the body. For example, such bi-crystal silicon may comprise a body of single crystal silicon having a one crystal orientation next to another body of single crystal silicon having a different crystal orientation making up the balance of the volume of crystalline silicon. Preferably, the bi-crystal silicon may contain two discrete regions within the same body of silicon, the regions differing only in their crystal orientation.
- In accordance with the invention as embodied and broadly described, there is provided a method of manufacturing cast silicon, comprising: placing a crucible filled with silicon on a layer, the layer comprising: a thermally conducting material in contact with a heat sink, and a thermally insulating area, where a thermally conductive part of the layer is in contact with about 5% to about 99% of a bottom surface of the crucible; and solidifying the silicon by extracting heat through the thermally conducting layer. The heat extraction may occur after part or all of the silicon is melted, in order to direct seeded growth by bringing the cast silicon to a first temperature and then cooling it to a second temperature.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising placing silicon in a crucible having walls tapered inwards towards a center of the crucible, melting the silicon, solidifying the silicon by extraction of heat through a bottom of the crucible, bringing the cast silicon to a first temperature, cooling the silicon down to a second temperature different from the first temperature, extracting the cast silicon from the crucible and then cutting sections from the cast silicon.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising placing silicon in a crucible having walls tapered outwards away from a center of the crucible, melting the silicon, solidifying the silicon by extraction of heat through a bottom of the crucible, bringing the cast silicon to a first temperature, cooling the silicon down to a second temperature different from the first temperature, extracting the cast silicon from the crucible and then cutting sections from the cast silicon.
- In accordance with the present invention, there is also provided a crucible for the casting of silicon having a bottom surface and a plurality of side walls, wherein at least one of the plurality of side walls tapers inwards toward a center of the crucible at an angle from about 1° to about 25° with respect to a plane perpendicular to a bottom surface of the crucible and viewed in a direction extending upwards from the bottom surface. The tapered side wall or walls may reduce the vessel cross-sectional area taken in the direction away from the bottom surface.
- In accordance with the present invention, there is also provided a crucible for the casting of silicon having a bottom surface and a plurality of side walls, wherein at least one of the plurality of side walls tapers outwards from a center of the crucible at an angle greater than about 2°, with respect to a plane perpendicular to a bottom surface of the crucible and viewed in a direction extending upwards from the bottom surface. The tapered side wall or walls may increase the vessel cross-sectional area taken in the direction away from the bottom surface.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising: coating inner side walls of a crucible with a release coating, leaving a bottom wall uncoated; placing silicon seed crystals in contact with the uncoated wall, placing silicon feedstock in the crucible, melting the feedstock while maintaining the seed crystals in at least a partially solid state, solidifying the silicon by extracting heat through the seed crystals, bringing silicon to a first temperature and cooling the silicon to a second temperature.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising: slicing a previously cast ingot into slabs, chemically treating the slabs to remove impurities, placing the slab in a crucible for use as a seed layer and then filling the crucible with feedstock for casting.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising: placing a layer of monocrystalline silicon seed crystals on at least one surface in a crucible such that seed crystals in a center region of the layer have one crystal pole direction perpendicular to the surface and cover about 50% to about 99% of the layer area, while the remaining seed crystals on the edges of the layer have at least one different crystal pole direction perpendicular to the surface and cover the remaining layer area; adding feedstock silicon and bringing the feedstock and a portion of the seed layer to a molten state; solidifying the silicon by extracting heat through the seed layer; bringing the silicon to a predetermined, for example, uniform first temperature and then preferably uniformly cooling the silicon down to a uniform second temperature.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising: placing at least one monocrystalline seed crystal having at least about 10 cm by about 10 cm area on a bottom surface of a crucible that rests on a partially insulating base plate; introducing solid or liquid silicon feedstock and partially melting the seed crystal, extracting heat through the seed crystal in such a way that a convex solid boundary increases the cross-sectional area of monocrystalline growth; bringing the silicon to a first temperature and cooling it, preferably uniformly, down to a second temperature; cutting a slab from a side of the cast silicon opposite the seed crystal; cleaning the slab using a chemical process; and using the large slab as a new seed layer for a subsequent casting process.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising: loading a seed layer of crystalline silicon together with solid silicon feedstock into a crucible having a lid or cover; melting and solidifying the silicon while maintaining part of the seed layer as solid and while flowing at least one of argon and nitrogen gas through at least one hole in the lid or cover while at least another hole exits the gas; and cooling the silicon preferably uniformly.
- In accordance with the present invention, there is also provided a method of manufacturing cast silicon, comprising: loading a seed layer of crystalline silicon into a crucible, covering the crucible having a lid; introducing liquid silicon into the crucible, the liquid silicon preferably being superheated; allowing part of the seed layer to melt; solidifying the silicon while flowing at least one of argon and nitrogen gas through at least one hole in the lid while at least one other hole exits the gas; and cooling the silicon.
- In accordance with the present invention, there is also provided a process for manufacturing cast silicon comprising loading a seed layer of crystalline silicon together with solid feedstock; melting the feedstock and part of the seed layer while maintaining a solid/liquid interface that is essentially flat over a center portion of the seed layer, and convex at the edges of the seed layer; solidifying the silicon by extracting heat through the seed layer while at least initially maintaining the same solid/liquid interface shape; bringing the silicon to a first temperature and cooling the silicon to a second temperature, the heating and cooling preferably being uniform.
- In accordance with the present invention, there is also provided a process for manufacturing cast silicon comprising loading a seed layer of crystalline silicon together with solid feedstock; melting the feedstock and part of the seed layer while maintaining a solid/liquid interface that is substantially flat over the entire seed layer; solidifying the silicon by extracting heat through the seed layer while at least initially providing extra heat in a region comprising the edges of the seed layer; bringing the silicon to a first temperature and preferably uniformly cooling the silicon to a second temperature, the heating and cooling preferably being uniform.
- In accordance with the present invention, there is also provided an apparatus for the casting of silicon comprising heaters for surrounding a crucible resting on a heat sink, the heaters being provided for the melting of silicon; a means for controlled extraction of heat through the heat sink; a port for introduction of a gas; and at least one loop of insulated, water cooled tube residing with the primary heaters and for encircling the crucible, wherein the loop can be energized to provide inductive heating at different regions within the crucible.
- The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the features, advantages, and principles of the invention. In the drawings:
-
FIGS. 1A-1B illustrate an exemplary system where a thermally insulating layer is combined with a thermally conducting layer below a crucible in a casting station, according to an embodiment of the present invention; -
FIGS. 2A-2D illustrate two examples of tapered crucibles together with illustrations of the desired effects on the silicon cast therein, according to embodiments of the present invention; -
FIG. 3 illustrates an example of silicon feedstock loaded into a partially coated crucible, according to an embodiment of the present invention; -
FIG. 4 illustrates an example of a method for recycling seed layer material, according to an embodiment of the present invention; -
FIG. 5 illustrates an exemplary arrangement of single crystal silicon to form a seed layer, according to an embodiment of the present invention; -
FIG. 6 illustrates an exemplary method for creating large single crystal seed layers, according to an embodiment of the present invention; -
FIGS. 7A-7B illustrate an exemplary apparatus for casting low carbon monocrystalline or multicrystalline silicon, according to an embodiment of the present invention; -
FIG. 8 illustrates an exemplary apparatus for casting monocrystalline or multi-crystalline silicon, according to embodiments of the present invention; and -
FIGS. 9A-D illustrate an exemplary system where a thermally insulating layer is combined with a thermally conducting layer in an alternate geometry, according to an embodiment of the present invention. - Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same or similar reference numbers will be used throughout the drawings to refer to the same or like parts.
- In embodiments consistent with the invention, the crystallization of molten silicon is conducted by casting processes using seed crystals. As disclosed herein, such casting processes may be implemented so that the size, shape, and orientation of crystal grains in the cast body of crystallized silicon is controlled. As used herein, the term “cast” means that the silicon is formed by cooling molten silicon in a mold or vessel used to hold the molten silicon. By way of example, the silicon can be formed by solidification in a crucible, where solidification is initiated from at least one wall of the crucible, and not through a cooled foreign object drawing silicon out of the crucible. Thus, the crystallization of molten silicon is not controlled by “pulling” a boule either by moving a seed or moving the mold, vessel, or crucible. Further, consistent with an embodiment of the present invention, the mold, vessel, or crucible includes at least one hot side wall surface for solidifying the molten silicon. As used herein, the term “hot-wall” refers to a surface that is isothermal or hotter than molten silicon. Preferably, a hot-wall surface remains fixed during processing of the silicon.
- Consistent with embodiments of the invention, the crystallized silicon can be either continuous monocrystalline, or continuous multi-crystalline having controlled grain orientations. As used herein, the term “continuous monocrystalline silicon” refers to single crystal silicon, where the body of silicon is one homogeneous body of monocrystalline silicon and not smaller pieces of silicon joined together to form a larger piece of silicon. Further, as used herein, the term “continuous multi-crystalline silicon” refers to multi-crystalline silicon where the body of silicon is one homogeneous body of multi-crystalline silicon and not smaller pieces of silicon joined together to form a larger piece of silicon.
- Casting of silicon, according to embodiments of the present invention, can be accomplished by positioning a desired collection of crystalline silicon “seeds” in, for example, the bottom of a vessel, such as a quartz crucible that can hold molten silicon. The seeds may cover all, or most, or substantially all, of the bottom of the crucible. As used herein, the term “seed” refers to a geometrically shaped piece of silicon with a desired crystal structure, having a side that conforms to a surface of a vessel in which it may be placed. Such a seed can be either a monocrystalline piece of silicon or a piece of geometrically ordered multi-crystalline silicon. Consistent with the present invention, a seed may have a top surface that is parallel to its bottom surface, although this does not have to be the case. For example, a seed can be a piece of silicon, varying in size from about 2 mm to about 10 mm across, to about 100 mm to about 1000 mm across. The piece of silicon may have a thickness of about 1 mm to about 1000 mm, preferably about 10 mm to about 50 mm. A suitable size and shape of the seed may be selected for convenience and tiling. Tiling, which will be described in more detail below, is where silicon seed crystals are arranged in a predetermined geometric orientation or pattern across either the bottom or the sides and bottom surfaces of a crucible.
- Silicon feedstock may then be introduced into the crucible over the seeds, and then the feedstock is melted. Alternatively, molten silicon may be poured directly into the crucible and over the seeds. When molten silicon is poured, the crucible is preferably first brought very close to or up to the melting temperature of silicon, and then the molten silicon is poured in. Consistent with embodiments of the invention, a thin layer of the seeds can be melted before solidification begins.
- The molten silicon is then allowed to cool and crystallize in the presence of the seeds, preferably in a manner such that the cooling of the molten silicon is conducted so that the crystallization of the molten silicon starts at or below the level of the original top of the solid seeds and proceeds away, preferably upwards away, from the seeds. This can be accomplished by extracting the heat of fusion through the seed crystals to a heat sink. As used herein, the term “heat sink” refers to a body of material used to extract heat from another body of material. A heat sink may extract heat by means of conduction of heat from a higher temperature area to a lower temperature area, by convection with a lower temperature fluid or by direct radiation of energy to a lower temperature object. A thermal gradient is generally maintained across a heat sink such that one side is in equilibrium with the object to be cooled while the other exchanges energy with a cooler area.
- According to embodiments of the invention, the liquid-solid interface between the molten silicon and the crystallized silicon, during melting or solidification, need not be maintained substantially flat throughout the casting process. That is, the solid-liquid interface at an edge of the molten silicon is controlled during the cooling so as to move in a direction that increases a distance between the molten silicon and the silicon seed crystal. As the solidification of the molten silicon starts, the solidification front is initially substantially flat, preferably with a strong curvature at the horizontal edges of the growing solid mass of silicon. The shape of the solid-liquid interface thus may have a controlled profile throughout the casting process.
- By conducting the crystallization of the molten silicon in a manner consistent with embodiments of the invention, cast silicon having specific, rather than random, grain boundaries and specific grain sizes can be made. Additionally, by aligning the seeds in a manner such that all seeds are oriented the same relative direction to each other, for example the (100) pole direction being perpendicular to a bottom of the crucible and the (110) pole direction at 45° to the sides of a rectangular or square cross-section crucible, large bodies of cast silicon can be obtained that are, or are essentially, monocrystalline silicon in which the pole direction of such cast silicon is the same as that of the seeds. Similarly, other pole directions may be perpendicular to the bottom of the crucible. Moreover, one or more seeds may be arranged so that any common pole direction is perpendicular to a bottom of the crucible. Furthermore, consistent with an embodiment of the invention, seed crystals of two or more different pole directions can be used together to maximize the effectiveness of the crystal growth, creating a volume of silicon as large as possible with the desired crystal orientation.
- The seeds used for casting processes, consistent with embodiments of the invention, can be of any desired size and shape, but are suitably geometrically shaped pieces of monocrystalline, or geometrically ordered multi-crystalline, silicon, such as square, rectangular, hexagonal, rhomboid or octagonal shaped pieces of silicon. They can be shaped conducive to tiling, so they can be placed or “tiled” edge-to-edge and conformed to the bottom of a crucible in a desired pattern. Also consistent with embodiments of the invention, seeds can be placed on one or more sides of the crucible. Such seeds can be obtained, for example, by sawing a source of crystalline silicon, such as a boule of monocrystalline silicon, into pieces having the desired shapes. The seeds can also be formed by cutting them from a sample of silicon made by a process according to the embodiments of the invention, such that seeds for use in subsequent casting processes can be made from an initial casting process. For example, a smaller piece of dislocation-free seed material can used to grow a large dislocation free single crystal, sufficient to cover the entire bottom of the crucible for use as a new seed crystal layer.
- Processes and apparatuses for preparing silicon in accordance with embodiments of the invention will now be described. However, it is to be understood that these are not the only ways to form silicon consistent with the embodiments of the invention.
- Referring to
FIGS. 1A and 1B , the cross-section of a casting station hot zone is depicted inFIG. 1A , showingliquid silicon 100 andsolid silicon 101 at the end of the melting stage of a seeded casting process. The silicon is positioned in a bottomed andwalled crucible 110, which may be, for example, a fused quartz or silica crucible. At this point,solid silicon 101 incrucible 110 is entirely constituted from a seed layer of silicon previously loaded at the bottom of the crucible. Feedstock silicon (not shown) is introduced on top of the seed layer. Feedstock silicon can either be loaded as a solid and then melted in the crucible, or melted in a separate container and introduced as a liquid on top of the seeds. In either case, the original silicon seed layer is partially melted andsolid silicon 101 is entirely composed of the remainder of the silicon seed layer. Preferably,crucible 110 has a release coating such as one made from silica, silicon nitride, or a liquid encapsulant, to aid in the removal of crystallized silicon fromcrucible 110. - Still referring to
FIG. 1A , in this depiction of a furnace hot zone,resistive heaters 120 provide the energy to maintain the temperature required to melt silicon, whileinsulation 130 prevents the escape of heat to an outer chamber (not shown). Consistent with an embodiment of the invention,crucible 110 is supported by a number of layers which also serve to conduct heat away from the silicon in a controlled way. For example, aheat conducting block 140 radiates heat to a water cooled chamber (not shown), thereby cooling the hot-zone components above it. Agraphite support plate 142, shown in cross section inFIG. 1A and in three dimensions inFIG. 1B , conducts heat fromheat conducting layer 141, which in turn conducts heat away fromcrucible 110 andsilicon layer 150 may surroundheat conducting layer 141, in an exemplary configuration, in order to alter the heat removal path and consequently alter the shape of the solidification front. Solidgraphite side plates 143surround crucible 110 and provide structural support to the crucible. Consistent with embodiments of the invention, the casting station may have agraphite support plate 142, though a tailored heat conduction path controlled by conductinglayer 141 and thermally insulatinglayer 150 is not required. - Still referring to
FIGS. 1A and 1B ,graphite side plates 143 may rest ongraphite support plate 142, and conduct heat directly toplate 142, which may create cold spots at the bottom edges of the crucible. The effect of the tailored heat conduction, vis-à-vislayers crucible 110 hotter, resulting in only a small amount of lateral melting. For example, as shown inFIG. 1A ,solid silicon 101 has a high curvature at its left and right edges due to the heat exchange occurring in materials belowcrucible 110. Such a curvature can result in the lateral expansion of the solid and outward growth of a seeded crystal structure. InFIG. 1A , crystal growth directions ofsolid silicon 101 are indicated by black arrows. - Referring to
FIGS. 2A-2D , crystal growth of silicon maybe altered by altering the shape of the crucible. For example, crystal growth can be accomplished in an outwardlytapered crucible 200, as shown inFIGS. 2A and 2B , where the curvature ofliquid silicon 220 to thesolid silicon 221 promotes lateral expansion of the seeded crystal (not shown), whose growth direction is indicated by arrows inFIG. 2B . In another example, crystal growth can be accomplished in an inwardly taperedcrucible 210, as shown inFIGS. 2C and 2D , which, likecrucible 200 inFIG. 2A , also has the advantage of maximizing the amount ofusable cast silicon 222, and minimizing the amount of unusable orundesirable silicon 223 to be removed during cutting of the cast silicon ingot (222+223) into bricks (shown by dashed lines). The tapered shape ofundesirable silicon 223 on a side wall of the cast silicon (viewed in cross-section inFIG. 2D ) is due to the extra time that the silicon at the bottom of the crucible spends at a high temperature state during solidification and crystal growth compared with the silicon at the top of the ingot, which is cooled more quickly. -
FIG. 3 illustrates a cross-section of silicon (feedstock 300 and crystalline seeds 301) loaded intocrucible 310 for casting.Release coating 320, such as silicon nitride or silicon carbide, may be applied to areas ofcrucible 310 wherefeedstock 300contacts crucible 310, which corresponds to areas ofsilicon 300 that will become completely melted during casting. No coating has been applied belowcrystalline seeds 301.Seeds 301 will not be completely melted and thus will not adhere tocrucible 110. -
FIG. 4 illustrates a process for the reuse of a crystalline silicon seed layer. As shown inFIG. 4 , castingot 400 grown fromseed layer 401 is first sliced along the dotted lines to remove a slab of material containingseed layer 401. The slab of material is then trimmed at the dotted edges to remove excess material that might interfere with its placement in another crucible. Trimmedslab 402, having been trimmed to the size and shape oforiginal seed layer 401, is then treated, potentially with other similar pieces of silicon, in acontainer 410, such as a tank or a tub containing a suitable liquid or other material, to remove contaminants and debris from layer 401 (and possibly other pieces of silicon) before being placed in anew crucible 420 for use as a seed layer in a subsequent casting process. -
FIG. 5 illustrates an exemplary arrangement of single crystal silicon pieces arranged to form a seed layer. The (001) crystal orientation has been shown to have advantageous properties for the manufacture of silicon solar cells. (001) silicon may be chemically etched in such a way as to produce a pattern pyramids covering its entire surface, which can improve the light-trapping ability of the silicon by both decreasing reflection and increasing the path length of light in the material. Chemical etching may be accomplished by known methods. However, the casting of (001) silicon is made difficult by its tendency to grow grain boundaries at acute angles to its (001) pole direction when located next to a multicrystalline region of silicon. To counteract the growth of multicrystalline silicon, a geometric arrangement of a plurality of monocrystalline silicon seed crystals can be placed on at least one surface in a crucible (not shown), e.g., a bottom surface of a crucible, wherein the geometric arrangement includes close-packed polygons. As shown inFIG. 5 , a piece of (001)silicon 500 is surrounded by a periphery of rectangles of (111)silicon 501. The pole orientation of theperipheral silicon 501 is shown as (111), but it could be any crystal orientation that is competitively favored when grown next to a multicrystalline region. In this way, the majority of a resulting cast ingot (not shown) will be composed of (001) silicon, and the competitively favored (111) grains grown fromsilicon 501 will limit the growth of multicrystalline silicon in the region occupied by (001) silicon oversilicon 500. Similarly, silicon crystal grains produced by casting a body of multi-crystalline silicon, consistent with embodiments of the invention, may be grown in a columnar manner. Further, such crystal grains may have a cross section that is, or is close to, the shape of the seed from which it is formed, instead of having an (001) cross-sectional area that shrinks as solidification proceeds. When making silicon that has such specifically selected grain boundaries, preferably the grain boundary junctions only have three grain boundaries meeting at a corner, a condition met in the arrangement shown inFIG. 5 . -
FIG. 6 illustrates a process for manufacturing large area, dislocation-free single crystals for use as seed layers. In this process, depicted in cross-section,polycrystalline feedstock 600 is loaded together with asingle crystal seed 601 which may have lateral dimensions from about 25 cm2 to about 10,000 cm2 in area and a thickness from about 3 mm to about 1000 mm.Feedstock 600 is placed incrucible 610, which is then placed in a station (not shown) on top oflayers parts 620 should preferably be about the same shape of bottom ofcrucible 610, having a lateral area from about 50% to about 150% that ofseed crystal 601. During melting, heat is extracted through thermally conductingarea 620 to asupport plate 621, while heat is prevented from passing through thermally insulatinglayer 630. Heat is conducted out through thermally conductingarea 620 even during the melting phase of casting, in order to prevent the complete melting ofseed crystal 601. Once allfeedstock 600 and a small portion ofseed crystal 601 are melted intoliquid silicon 602, remainingsolid silicon 603 then acts as the nucleation layer for the solidification process. The presence of insulatinglayer 630 helps control the shape ofsolid silicon 603 during nucleation and growth, as well as the direction of solidification, indicated by arrows inFIG. 6 . The strong curvature in the solidification surface causes an outward growth ofsolid silicon 603, whilemulticrystalline regions 605 are minimized. Onceingot 604 is cast, horizontal layers may be cut (dashed lines) from the upper parts of the ingot to be used asnew seed slabs 606.Slabs 606 can be cleaned, trimmed, and used as a complete seed layer for a new ingot in anew crucible 610, or as a starting point for an even larger single crystal, again using the process just described. -
FIGS. 7A and 7B are depictions of the cross-section of an apparatus for the casting of low carbon monocrystalline or multicrystalline silicon in a seeded ingot. As shown inFIG. 7A ,seed crystal 700 is loaded together withfeedstock 701 incrucible 710 located in a furnace hot zone (unlabeled).Crucible 710, though illustrated as covered with ceramic lid 711 (also shown inFIG. 7B ), may be uncovered and completely open to the surrounding atmosphere. In casting, carbon can be incorporated into an ingot from detached pieces ofgraphite insulation 720 which may fall intocrucible 710, or by a gas phase reaction where oxygen fromcrucible 710 dissolves into the silicon melt and then evaporates as SiO molecules (not shown). These molecules can adhere tographite parts - The CO gas molecule enters the liquid where SiC forms and O is again liberated to repeat the cycle. By introducing ceramic lid 711 (shown in FIG. 7B) to
crucible 710, and carefully controlling process gas 730 (which may be, for example, argon), both mechanisms of carbon incorporation can be effectively stopped, or severely restricted.Ceramic lid 711 can be made of a number of materials including, for example, fused silica, quartz, silicon carbide, silicon nitride, and the like. It is desirable for the design that a fresh supply of an inert gas, such as argon, come in throughchannel 740 and exit through another channel (not shown) in order to prevent the above-described carbon gas reaction. - Still referring to
FIGS. 7A and 7B , the casting process can be operated either by loading one ormore seeds 700 andfeedstock 701 prior to installingcrucible 710 in the furnace, or by loading only one ormore seeds 700 and later introducingliquid silicon 750 into the crucible from a separate melt chamber. -
FIG. 8 illustrates an apparatus consistent with embodiments of this invention for modifying the shape of the solid-liquid interface during casting. As shown inFIG. 8 ,primary heaters 820 and anadditional heater 840 are placed in the hot zone (shown surrounded by insulation 831) of a casting station to introduce targeted heating tomaterial Liquid material 800 on top ofsolid seed material 801 has an interface that is curved at the edges, near the side walls ofcrucible 810.Primary heaters 820 together withprimary heat sink 860 normally work to produce a substantially flat solid-liquid interface (not shown). However,additional heater 840 couples an electric current directly tomaterial material crucible 810, and thereby meltssolid material 801 in its vicinity. -
Additional heater 840, as shown inFIG. 8 , is a coil of conductive metal, which may be, for example, copper, that is cooled with circulatingliquid 850 and thermally insulated fromprimary heaters 820 by surroundinglayer 830.Additional heater 840 may be a single turncoil surrounding crucible 810 in a loop, as illustrated inFIG. 8 , or it may have multiple loops forming a helix having any desired spacing between loops constituting the helix.Additional heater 840 may also be configured so that it can move relative to the walls ofcrucible 810 in order to affect the solid-liquid interface (not shown).Additional heater 840 operates by electrical current flowing through the copper pipe while the water cools it so the current through the pipe forms a strong magnetic field which couples with the liquid silicon, inducing a corresponding current in the silicon. Resistive heat from the current in and/or through the silicon provides the heating action in a localized way and/or manner. - Alternately, resistive heaters could be used as
additional heaters 840, but resistive heaters may not be as efficient in targeting the heat application to a specific volume of material, such asmaterial FIG. 8 ,additional heater 840 would only be activated near the end of the melting cycle, so as not to overly meltseed material 801.Additional heater 840 would continue to apply heat tocrucible 810 through at least about the first 20% of the solidification process.Additional heater 840 may also continue to apply heat tocrucible 810 through the entire solidification process until implementation of the cooling stage. - As disclosed herein, embodiments of the invention can be used to produce large bodies of monocrystalline silicon, near-monocrystalline silicon, bi-crystal silicon, or geometric multi-crystalline silicon, by a simple and cost-effective casting process. The silicon feedstock used in processes consistent with embodiments of the invention, and thus the silicon produced, can contain one or more dopants selected from a list including: boron, aluminum, lithium, gallium, phosphorus, antimony, arsenic, and bismuth. The total amount of such dopant or dopants can be about 0.01 parts per million (ppm) by atomic % (ppma) to about 2 ppma. Preferably, the amount of dopant or dopants in the silicon is an amount such that a wafer made from the silicon has a resistivity of about 0.1 to about 50 ohm-cm, preferably of about 0.5 to about 5.0 ohm-cm. Alternately, other materials having a suitable liquid phase can be cast using the processes and apparatuses disclosed here. For example, germanium, gallium arsenide, silicon germanium, sapphire, and a number of other III-V or II-VI materials, as well as metals and alloys, could be cast according to embodiments of the present invention.
- Moreover, although casting of silicon has been described herein, other semiconductor materials and nonmetallic crystalline materials may be cast without departing from the scope and spirit of the invention. For example, the inventors have contemplated casting of other materials consistent with embodiments of the invention, such as germanium, gallium arsenide, silicon germanium, aluminum oxide (including its single crystal form of sapphire), gallium nitride, zinc oxide, zinc sulfide, gallium indium arsenide, indium antimonide, germanium, yttrium barium oxides, lanthanide oxides, magnesium oxide, calcium oxide, and other semiconductors, oxides, and intermetallics with a liquid phase. In addition, a number of other group III-V or group II-VI materials, as well as metals and alloys, could be cast according to embodiments of the present invention.
- According to some embodiments, suitable insulating materials for the thermally insulating area may include carbon fiber insulation board, carbon bonded carbon fiber (CBCF), alumina fiber, silica fiber, fused silica, fused quartz, radiation reflector, carbon fiber composite, and or any other substance having a relatively high thermal conductivity and a stability at the operating temperatures of the casting processes.
- According to some embodiments, suitable conducting materials for the thermally conducting material may include graphite, high temperature metals, high temperature alloys, tungsten, molybdenum, tantalum, silicon carbide, ceramics with sufficient thermal conductivity and/or any other substance having a lower thermal conductivity than the insulating material and a stability at operating temperatures of the casting processes.
- According to some embodiments, materials in the layer include a ratio of thermal conductivities of at least about 20:1 (conductor/insulator), desirably at least about 50:1 and more desirably at least about 100:1. For example, at the working temperature range of about 1400° C., graphite has a thermal conductivity of 48 W/m/K conductivity while CBCF has a thermal conductivity of 0.7 W/m/K, resulting in a ratio of about 68:1. When measured at room temperature, the same materials have a ratio of about 260:1.
- According to some embodiments, the thermal conducting material is framed by the thermally insulating area, such as to form a square and/or a rectangular shape. Desirably, a conduction window is at least generally congruent and/or conesponds with a shape of the seed crystal arrangement. Alternately and as shown in
FIGS. 9A-D , extra cooling area is applied in the corners because they are heated from two sides.FIG. 9A shows thermally conductinglayer 141 with a contoured thermally insulating layer and/orarea 150, such as a width of insulatinglayer 150 in a middle of a side is about double a width of insulatinglayer 150 in a corner.FIG. 9B showscrucible 110 in relation to thermally conductinglayer 141 and thermally insulatinglayer 150.FIG. 9C shows an outline in dashed lines of support walls 142 (typically graphite) placed on the insulatinglayer 150.FIG. 9D shows an outline in dashed lines ofsolid silicon 101 placed incrucible 110 and with respect to thermally conductinglayer 141 and thermally insulatinglayer 150. - According to some embodiments a method of shaping the thermal conducting material and/or the thermal insulating material includes the use of saws, routers and/or any other suitable device. Any suitable configuration of the thermal conducting material and/or the thermal insulating material is possible, such as including lips, ledges, interlocking pieces, chamfers, rounded corners, and the like.
- Desirably, a solid perimeter of the partially melted seed crystal remains roughly square. Any suitable ratio of an area of a conducting window to a seed crystal area is possible, such as from about 0.5 to about 2.0, desirably about 1.0, and even more desirably about 0.9 to about 1.1.
- According to some embodiments, the additional heater and/or the water tube heater is movable relative the a height of the crucible, such as to apply localized heat to the silicon during solidification and adjust upwards and/or downwards with respect to the solid-liquid interface. This dynamic capability allows for flat melt/solid interface shapes during melting, with control of heat input during solidification, such as to keep the walls warm and minimize growth of multicrystalline material, while maximizing growth of the desired monocrystalline silicon, near-monocrystalline silicon, and/or geometric multicrystalline silicon.
- According to other embodiments of this invention, dynamic capabilities allow the apparatus to vary the heat flow, such as in the melting segment and in the growth segments. The insulating area may be increased and/or decreased by inserting and/or removing the thermally insulating area from under the crucible and/or support walls, for example. The layer may include markings, notches, pegs and/or any other suitable devices to aid in positioning various components. In other embodiments, the static insulation balances between the needs and/or characteristics in melting and in growth.
- According to some embodiments, the invention includes a method of manufacturing cast silicon, comprising placing a crucible on a layer. The layer comprising a thermally conducting material, a heat sink, and a thermally insulating area, where a thermally conductive part of the layer contacts with a portion of a bottom surface of the crucible. The method further comprises placing at least one seed crystal on a bottom of the crucible, placing molten silicon in contact with the at least one seed crystal, and forming a solid body of silicon by extracting heat through the thermally conducting material. Desirably, the method further includes forming a portion of the solid body to include the at least one seed crystal.
- According to some embodiments, the invention includes a method of manufacturing a solar cell comprising providing a solid body of cast silicon, slicing the solid body of cast silicon to form at least one wafer, forming a p-n junction by doping a surface of the at least one wafer, and forming a surface neutralizing layer and/or a back surface field and forming electrically conductive contacts on at least one surface of the wafer.
- According to some embodiments, a heat flux through the layer changes from the step of melting the silicon to the step of forming a solid body, such as to provide asymmetric melting and optimize the casting process. Desirably, a minimum heat transfer to the heat sink occurs during melting, such as is barely sufficient for retaining solid silicon seed material on the crucible bottom. During the melting, however, the area of heat transfer is as wide as possible to encourage a flat melt/solid interface. During cooling or solidification the heat sink experiences a higher heat flux to cause solidification of the ingot, but the thermally insulating area is increased to at least partially isolate the graphite support walls and the side walls of the crucible from the thermally conducting material and/or the heat sink. The effect of this arrangement is to keep the sides warm and maintain a domed melt/solid interface, minimizing growth of multicrystalline silicon from the sidewalls.
- Optionally, the step of extracting heat expands a lateral area of the seeded crystal during solidification. The embodiment may further include placing a solid silicon feedstock in the crucible on top of the at least one seed crystal and melting the solid silicon feedstock while cooling the bottom of the crucible to maintain the at least one seed crystal in an at least partially solid state.
- Alternately, the step of placing molten silicon further includes melting a silicon feedstock in a melt container separate from the crucible, heating the crucible to melting temperature of silicon, controlling heating so that the at least one seed crystal in the crucible does not melt completely, and transferring the molten silicon from the melt container into the crucible.
- According to some embodiments, the thermally conducting material contacts between about 5% to about 99% of the bottom surface area of the crucible, and desirably at least about 90%. Alternately, the thermally conducting material corresponds to a size and a shape of the at least one seed crystal within the crucible, such as having a ratio of an area of the thermal conducting material to an area of the seed crystal from about 0.5 to about 2.0, and desirably from about 0.9 to about 1.
- The method of manufacture may further include reducing and/or enlarging the thermally conducting material and//or thermally conducting area in contact with a crucible bottom by adding and/or removing at least a portion of the thermally insulating area, for example.
- Desirably, but not necessarily, the heat sink comprises a radiative heat sink, radiating heat to walls of a water-cooled vessel. According to some embodiments, the thermally insulating area forms a perimeter or a border around the thermally conducting material. Alternately, the perimeter comprises a contoured shape wider in a middle of a side of the layer than in corners of the layer. The perimeter may thermally isolate graphite side support walls for the crucible from the heat sink, such as to reduce cooling and slow multicrystalline growth from the walls. The perimeter may sometimes be referred to as a thermal ring.
- According to some embodiments, the invention includes an apparatus for casting of silicon comprising optionally a crucible, optionally at least one seed crystal on a bottom of the crucible, resistive heaters in thermal communication with the crucible, and a layer. The layer comprises a thermally conducting material, a heat sink, and a thermally insulating area, wherein a thermally conductive part of the layer is for contact with a portion of a bottom surface of the crucible on a side and the heat sink on an opposite side. Desirably, the thermally insulating area forms a perimeter around the thermally conducting material. Optionally, the thermally insulating area is movable, such as comprising four or more discrete pads or blocks, so that the thermally insulating area increases, decreases and/or changes heat transferred through the layer by moving with respect to the thermally conducting material.
- According to some embodiments, a ratio of thermal conductivities of the thermally conducting material to the thermally insulating area is at least about 20:1. In other embodiments, a ratio of an area of the thermal conducting material to an area of the seed crystal is from about 0.5 to about 2.0.
- The invention also may include a process for manufacturing cast silicon comprising the steps of loading a seed layer of crystalline silicon together with a solid feedstock, melting the solid feedstock and part of the seed layer by maintaining a solid/liquid interface essentially flat over the center of the seed layer, but convex in the solid portion at the edges of the seed layer, forming a solid body of silicon by extracting heat through the seed layer while maintaining the solid/liquid interface essentially flat over the center of the seed layer, but convex in the solid portion at the edges of the seed layer, bringing the solid body to a first temperature, and cooling the solid body to a second temperature.
- The first temperature, such as a range of between about 1410° C. and about 1300° C. usually includes a temperature gradient across and/or through the solid body. The second temperature, such as about 1350° C. on average usually includes a reduced temperature gradient and/or a uniform temperature profile across and/or through the solid body. The reducing the temperature gradient may be referred to sometimes as annealing in the context of this disclosure. Annealing may include closing up the insulation, for example.
- The invention also may include a method for manufacturing cast silicon comprising loading a seed layer of crystalline silicon together with a solid feedstock, melting the solid feedstock and part of the seed layer by maintaining a solid/liquid interface substantially flat over the entire seed layer, forming a solid body of silicon by extracting heat through the seed layer while at least initially providing extra heat in the local vicinity of at least one edge of the seed layer, bringing the solid body to a first temperature, and cooling the solid body to a second temperature.
- According to some embodiments, the invention includes an apparatus for casting silicon comprising at least one primary resistive heater for melting of silicon for surrounding a crucible resting on a heat sink, a means for the controlled extraction of heat through the heat sink, a port for the introduction of a gas; and an additional heater for encircling the crucible to provide inductive heating at different regions within the crucible. Desirably, the additional heater comprises one loop of a thermally insulated, water cooled, electrically conductive tube residing with the at least one primary resistive heater. Also desirably, the additional heater moves relative to walls of the crucible. The apparatus may also include at least one seed crystal on a bottom of the crucible.
- The following examples are experimental results consistent with embodiments of the invention. These examples are presented for merely exemplifying and illustrating embodiments of the invention and should not be construed as limiting the scope of the invention in any manner.
- Crucible preparation: A crucible was placed on a supporting structure consisting of two layers. The bottom layer of the supporting structure is a solid isomolded graphite plate measuring 80 cm by 80 cm by 2.5 cm which supported a composite layer. The upper composite layer had an inner region that was a thermally conducting isomolded graphite plate measuring 60 cm by 60 cm by 1.2 cm, and was surrounded on all sides by a 10 cm perimeter of thermally insulating graphite fiber board of 1.2 cm thickness. In this way, the composite layer completely covered the bottom layer.
- Seed preparation: A boule of pure Czochralski (CZ) silicon (monocrystalline) obtained from MEMC, Inc. and having 0.3 ppma of boron, was cut down along its length using a diamond coated band saw so that it had a square cross section measuring from 140 mm per side. The resulting block of monocrystalline silicon was cut through its cross section using the same saw into slabs having a thickness of about 2 cm to about 3 cm. These slabs were used as monocrystalline silicon seed crystals, or “seeds.” The (100) crystallographic pole orientation of the silicon boule was maintained. The resulting single crystal silicon slabs were then arranged in the bottom of a quartz crucible so that the (100) direction of the slabs faced up, and the (110) direction was kept parallel to one side of the crucible. The quartz crucible had a square cross section with 68 cm on a side and a depth of about 40 cm. The slabs were arranged in the bottom of the crucible with their long dimension parallel to the bottom of the crucible and their sides touching to form a single, complete layer of such slabs on the bottom of the crucible.
- Casting: The crucible was loaded with the seed plates and then filled up to a total mass of 265 kg of solid silicon feedstock at room temperature. A few wafers of highly boron doped silicon were added to provide enough boron for a total ingot doping of ˜0.3 ppma. The filled crucible was first surrounded with graphite support plates that rested on the thermally insulating portion of the support structure, and was then loaded into an in-situ melting/directional solidification casting station used to cast multi-crystalline silicon. The melt process was run by heating resistive heaters to approximately 1550° C., and the heaters were configured so that the heating came from the top while heat was allowed to radiate out the bottom by opening the insulation a total of 6 cm. This configuration caused the melting to proceed in a top-down direction towards the bottom of the crucible. The passive cooling through the bottom caused the seed crystals to be maintained in solid state at the melting temperature, as was monitored by a thermocouple. The extent of melting was measured by a quartz dip rod that was lowered into the melt every ten minutes. The dip rod height was compared with a measurement taken on an empty crucible in the station to determine the height of the remaining solid material. By dip rod measurement, first the feedstock melted, and then the melting phase was allowed to continue until only a height of about 1.5 cm of the seed crystals remained. At this point, the heating power was dropped to a temperature setting of 1500° C., while the radiation from the bottom was increased by opening the insulation to 12 cm. One or two additional millimeters of seed crystals melted before solidification began, as observed by dip-rod measurements. Then seeded single crystal growth proceeded until the end of the solidification step. The growth stage and the remainder of the casting cycle were performed with the normal parameters where the top-to-bottom thermal gradient is evened out, and then the entire ingot is slowly cooled to room temperature. The cast silicon product was a 66 cm by 66 cm by 24 cm ingot. The region of crystallinity consistent with the seeds began at the bottom and conformed with the edge of the unmelted material, and from there grew laterally outwards toward the crucible walls as growth began, and stabilized to a constant size towards the end of crystallization. The monocrystalline silicon structure was evident from visually inspecting the faces of bricks cut from the ingot.
- Seeding was accomplished as in Example 1, and an ingot was cast containing a large monocrystalline volume. After cooling, the ingot was stood on its side and loaded into a band saw with fixed diamond abrasive for cutting. The bottom of the ingot was cut off as a single layer with a thickness of 2 cm. This layer was then fixed horizontally on a cutting table. In the same band saw, the edges of the layer were trimmed such that approximately 1.5 cm was removed from each side. The slab was then sandblasted to remove glue and foreign materials, after which it was etched in a hot sodium hydroxide bath, rinsed, and dipped in a HCl bath to remove metals. The slab was then placed on the bottom of a standard crucible of the same size as the previous ingot. Silicon feedstock was loaded to a total mass of 265 kg and the casting process was repeated, producing a second seeded ingot.
- Seed preparation: A seed layer was prepared, starting with 18 kg of square, (100), plates used to line the bottom of a crucible, providing a coverage area of 58 by 58 cm and a thickness ranging from 2-3 cm. These plates were placed together into a larger square that was centered in the crucible. Next, this square was surrounded by a 2 cm thick layer of (111) oriented seed crystals, making the total seed layer a 63 cm by 63 cm square.
- Casting: The crucible containing the seeds was filled with silicon to a total mass of 265 kg and placed in a casting station. Casting was performed as in Example 1, monitoring the process to assure that the seed layer remained intact through the end of melt and beginning of solidification. The resulting ingot was cut into a 5×5 grid of 12.5 cm bricks. Optical inspection of the crystal structure of the bricks showed that the (111) crystals acted as a buffer layer, preventing the ingress of randomly nucleated grains into the (100) volume.
- Crucible preparation: A standard 69 cm2 crucible was placed on a support structure composed of two layers. The layers were composed as in Example 1 except that the dimensions of the composite layer were different. The bottom solid graphite layer had dimensions of 80×80×2.5 cm3 as before, but the heat conducting portion of the composite layer measured only 20×20×1.2 cm3, centered on top of the bottom layer. The remainder of the bottom layer was covered with heat insulating graphite fiber board.
- Seed preparation: A single piece of (100)-oriented single crystal silicon with a size of 21 cm by 21 cm by 2 cm was centered in the bottom of the crucible. The crucible was then filled with a balance of silicon feedstock to a total mass of 265 kg.
- Casting: The crucible and support plates were placed in a casting station and cycled as in Example 1, except that additional time was allowed for the solidification of the silicon, given the smaller heat extraction area. After cooling down, the ingot was sectioned. Visual inspection of the sectioned ingot verified the strong outwards growth of the crystals from the controlled heat extraction.
- Crucible preparation: A standard 69 cm2 crucible was placed on a graphite support plate and loaded with a seed layer, feedstock and dopant as in Example 1, except that the feedstock contained no silicon recycled from previous ingots. A fused silica lid that had dimensions of 69×69×12 cm3 was then placed on the crucible. A casting station was modified such that a telescoping tube was attached to the hole in the top insulation where the process gas is introduced. The charge was then loaded into the station and raised up to engage the telescope. The casting station was run using an altered recipe to allow better gas control and altered solidification settings to compensate for the effects of the crucible lid. The resulting ingot was measured to have 1/10th of the carbon concentration found in a typical ingot, and additionally had a mirror-like top surface and fewer included foreign particles than typical ingots.
- Thus, consistent with embodiments of the invention and the examples described above, wafers made from the silicon consistent with embodiments of the invention are suitably thin and can be used in photovoltaic cells. For example, wafers can be about 10 microns thick to about 300 microns thick. Further, the wafers used in the photovoltaic cells preferably have a diffusion length (Lp) that is greater than the wafer thickness (t). For example, the ratio of Lp to t is suitably at least 0.5. It can, for example, be at least about 1.1, or at least about 2. The diffusion length is the average distance that minority carriers (such as electrons in p-type material) can diffuse before recombining with the majority carriers (holes in p-type material). The Lp is related to the minority carrier lifetime τ through the relationship Lp=(Dτ)1/2, where D is the diffusion constant. The diffusion length can be measured by a number of techniques, such as the Photon-Beam-Induced Current technique or the Surface Photovoltage technique. See for example, “Fundamentals of Solar Cells”, by A. Fahrenbruch and R. Bube, Academic Press, 1983, pp. 90-102, which is incorporated by reference herein, for a description of how the diffusion length can be measured.
- The wafers can have a width of about 100 millimeters to about 600 millimeters. Preferably, the wafers have at least one dimension being at least about 50 mm. The wafers made from the silicon of the invention, and consequently the photovoltaic cells made by the invention can, for example, have a surface area of about 100 to about 3600 square centimeters. The front surface of the wafer is preferably textured. For example, the wafer can be suitably textured using chemical etching, plasma etching, or laser or mechanical scribing. If a monocrystalline wafer is used, the wafer can be etched to form an anisotropically textured surface by treating the wafer in an aqueous solution of a base, such as sodium hydroxide, at an elevated temperature, for example about 70° C. to about 90° C., for about 10 to about 120 minutes. The aqueous solution may contain an alcohol, such as isopropanol.
- Thus, solar cells can be manufactured using the wafers produced from cast silicon ingots according to the embodiments of the invention, by slicing the solid body of cast silicon to form at least one wafer; optionally performing a cleaning procedure on a surface of the wafer; optionally performing a texturing step on the surface; forming a p-n junction by doping the surface; optionally depositing an anti-reflective coating on the surface; optionally forming a back surface field with, for example, an aluminum sintering step; and forming electrically conductive contacts on at least one surface of the wafer.
- In a typical and general process for preparing a photovoltaic cell using, for example, a p-type silicon wafer, the wafer is exposed on one side to a suitable n-dopant to form an emitter layer and a p-n junction on the front, or light-receiving side of the wafer. Typically, the n-type layer or emitter layer is formed by first depositing the n-dopant onto the front surface of the p-type wafer using techniques commonly employed in the art such as chemical or physical deposition and, after such deposition, the n-dopant, for example, phosphorus, is driven into the front surface of the silicon wafer to further diffuse the n-dopant into the wafer surface. This “drive-in” step is commonly accomplished by exposing the wafer to high temperatures. A p-n junction is thereby formed at the boundary region between the n-type layer and the p-type silicon wafer substrate. The wafer surface, prior to the phosphorus or other doping to form the emitter layer, can be textured. In order to further improve light absorption, an anti-reflective coating, such as silicon nitride, is typically applied to the front of the wafer, sometimes providing simultaneous surface and or bulk passivation.
- In order to utilize the electrical potential generated by exposing the p-n junction to light energy, the photovoltaic cell is typically provided with a conductive front electrical contact on the front face of the wafer and a conductive back electrical contact on the back face of the wafer, although both contacts can be on the back of the wafer. Such contacts are typically made of one or more highly electrically conducting metals and are, therefore, typically opaque.
- Thus, solar cells consistent with the embodiments described above may comprise a wafer sliced from a body of continuous monocrystalline silicon being substantially free of radially-distributed defects, the body having at least two dimensions each being at least about 35 cm, a p-n junction in the wafer, an anti-reflective coating on a surface of the wafer; and a plurality of electrically conductive contacts on at least one surface of the wafer, wherein the body is substantially free of swirl defects and substantially free of oxygen-induced stacking fault defects.
- Also, solar cells consistent with the embodiments described above may comprise a wafer sliced from a body of continuous multi-crystalline silicon being substantially free of radially-distributed defects, the body having a predetermined arrangement of grain orientations with a common pole direction being perpendicular to a surface of the body, the body further having at least two dimensions each being at least about 10 cm, a p-n junction in the wafer; an anti-reflective coating on a surface of the wafer, and a plurality of electrically conductive contacts on at least one surface of the wafer, wherein the multi-crystalline silicon includes silicon grains having an average grain boundary length of about 0.5 cm to about 30 cm, and wherein the body is substantially free of swirl defects and substantially free of oxygen-induced stacking fault defects.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the disclosed structures and methods without departing from the scope or spirit of the invention. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
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US12/669,504 US20100197070A1 (en) | 2007-07-20 | 2008-07-16 | Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals |
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US95115507P | 2007-07-20 | 2007-07-20 | |
US12/669,504 US20100197070A1 (en) | 2007-07-20 | 2008-07-16 | Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals |
PCT/US2008/070196 WO2009014961A1 (en) | 2007-07-20 | 2008-07-16 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
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US12/669,521 Abandoned US20100203350A1 (en) | 2007-07-20 | 2008-07-16 | Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals |
US12/669,504 Abandoned US20100197070A1 (en) | 2007-07-20 | 2008-07-16 | Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals |
US12/669,534 Expired - Fee Related US8440157B2 (en) | 2007-07-20 | 2008-07-16 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
US13/851,996 Expired - Fee Related US8591851B2 (en) | 2007-07-20 | 2013-03-28 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
US14/057,371 Expired - Fee Related US8871169B2 (en) | 2007-07-20 | 2013-10-18 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
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US13/851,996 Expired - Fee Related US8591851B2 (en) | 2007-07-20 | 2013-03-28 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
US14/057,371 Expired - Fee Related US8871169B2 (en) | 2007-07-20 | 2013-10-18 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
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JP5975176B2 (en) * | 2013-07-11 | 2016-08-23 | 宇部興産株式会社 | Silicon nitride powder for mold release agent of polycrystalline silicon ingot casting mold and manufacturing method thereof, slurry containing silicon nitride powder, casting mold for polycrystalline silicon ingot and manufacturing method thereof, and polycrystalline silicon using the mold Manufacturing method of ingot casting |
US9506165B2 (en) * | 2013-10-21 | 2016-11-29 | Solarworld Americas Inc. | Method for producing silicon-ingots |
TWI541396B (en) * | 2013-12-20 | 2016-07-11 | 中美矽晶製品股份有限公司 | Cooling device for ingot casting furnace and method of casting ingot |
CN103952754A (en) * | 2014-04-21 | 2014-07-30 | 江西赛维Ldk太阳能高科技有限公司 | Monocrystal-like silicon ingot preparation method and methods for preparing monocrystal-like silicon wafers by cutting monocrystal-like silicon ingot |
US9425262B2 (en) | 2014-05-29 | 2016-08-23 | Fairchild Semiconductor Corporation | Configuration of portions of a power device within a silicon carbide crystal |
TWI586457B (en) * | 2014-06-16 | 2017-06-11 | 中美矽晶製品股份有限公司 | Containing device of ingot casting furnace for containing materials of ingot and method of casting ingot |
KR101638443B1 (en) * | 2015-01-28 | 2016-07-11 | 영남대학교 산학협력단 | Thin film deposition crucible and method of depositing thin film using the same and vacuum evaporation apparatus |
CN105063742A (en) * | 2015-07-21 | 2015-11-18 | 李剑 | Mono-like crystal growth method, mono-like silicon ingot and mono-like battery |
DE102016001730A1 (en) * | 2016-02-16 | 2017-08-17 | Krasimir Kosev | Polykristallherstellungsvorrichtung |
CN106222746A (en) * | 2016-10-17 | 2016-12-14 | 宁夏协鑫晶体科技发展有限公司 | Single crystal growing furnace melt time shortening device and method |
CN110121788B (en) * | 2016-11-14 | 2023-03-28 | 信越化学工业株式会社 | Method for manufacturing solar cell with high photoelectric conversion efficiency and solar cell with high photoelectric conversion efficiency |
US10371445B1 (en) | 2016-11-15 | 2019-08-06 | Consolidated Nuclear Security, LLC | Passive thermal control of microwave furnace components |
CN108842179B (en) * | 2018-07-13 | 2020-04-14 | 浙江大学 | Method for preparing double-crystal-orientation polycrystalline silicon ingot by setting sigma 3 twin crystal boundary |
JP7007483B2 (en) * | 2018-07-20 | 2022-01-24 | 京セラ株式会社 | Silicon ingots, silicon blocks, silicon substrates, silicon ingot manufacturing methods, and solar cells |
CN109280962A (en) * | 2018-11-09 | 2019-01-29 | 中国电子科技集团公司第十研究所 | A kind of VGF single crystal growing furnace, heating means and storage medium |
CN114959883B (en) * | 2022-05-17 | 2024-02-06 | 上海汉虹精密机械有限公司 | Seed crystal lifting mechanism of semiconductor silicon single crystal furnace |
Citations (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3156549A (en) * | 1958-04-04 | 1964-11-10 | Du Pont | Method of melting silicon |
US3581804A (en) * | 1970-05-11 | 1971-06-01 | Hamilton Die Cast Inc | Expansion gap compensating system for a die |
US3653432A (en) * | 1970-09-01 | 1972-04-04 | Us Army | Apparatus and method for unidirectionally solidifying high temperature material |
US3664411A (en) * | 1969-10-25 | 1972-05-23 | Gkn Group Services Ltd | Die-casting apparatus with ceramic shot duct liner |
US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
US4094621A (en) * | 1974-12-13 | 1978-06-13 | Karl Hehl | Die closing unit with oversize injection molding die |
US4101624A (en) * | 1974-03-06 | 1978-07-18 | Ppg Industries, Inc. | Method of casting silicon |
US4175610A (en) * | 1977-10-07 | 1979-11-27 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process and apparatus for the semicontinuous production of silicon moldings |
US4382838A (en) * | 1975-02-28 | 1983-05-10 | Wacker-Chemie Gmbh | Novel silicon crystals and process for their preparation |
US4834166A (en) * | 1986-01-10 | 1989-05-30 | Akio Nakano | Die casting machine |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
US5205872A (en) * | 1988-12-10 | 1993-04-27 | Kawasaki Steel Corporation | Method of producing crystal bodies having controlled crystalline orientation |
US5211802A (en) * | 1990-03-30 | 1993-05-18 | Osaka Titanium Co., Ltd. | Method for producing silicon single crystal from polycrystalline rod formed by continous casting |
US5229082A (en) * | 1990-01-25 | 1993-07-20 | Westinghouse Electric Corp. | Melt replenishment system for dendritic web growth |
US5242531A (en) * | 1991-03-01 | 1993-09-07 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. | Continuous liquid silicon recharging process in czochralski crucible pulling |
US5264070A (en) * | 1990-10-09 | 1993-11-23 | Motorola, Inc. | Method of growth-orientation of a crystal on a device using an oriented seed layer |
US5340410A (en) * | 1991-11-08 | 1994-08-23 | Siemens Aktiengesellschaft | Method for manufacturing polycrystalline silicon thin-film solar cells |
US5363799A (en) * | 1987-08-08 | 1994-11-15 | Canon Kabushiki Kaisha | Method for growth of crystal |
US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
US5431869A (en) * | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
US5549746A (en) * | 1993-09-24 | 1996-08-27 | General Electric Company | Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal |
US5614019A (en) * | 1992-06-08 | 1997-03-25 | Air Products And Chemicals, Inc. | Method for the growth of industrial crystals |
US5707744A (en) * | 1995-12-26 | 1998-01-13 | Xerox Corporation | Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates |
US5714004A (en) * | 1995-06-15 | 1998-02-03 | Sharp Kabushiki Kaisha | Process for producing polycrystalline semiconductors |
US5759879A (en) * | 1995-04-10 | 1998-06-02 | Sharp Kabushiki Kaisha | Method for forming polycrystalline silicon film and method for fabricating thin-film transistor |
US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
US5827773A (en) * | 1997-03-07 | 1998-10-27 | Sharp Microelectronics Technology, Inc. | Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon |
US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
EP0949358A2 (en) * | 1998-02-26 | 1999-10-13 | Mitsubishi Materials Corporation | Mold for producing silicon ingot and method for fabricating the same |
US6027563A (en) * | 1996-02-24 | 2000-02-22 | Ald Vacuum Technologies Gmbh | Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber |
US6106739A (en) * | 1998-10-15 | 2000-08-22 | Starmet Corporation | Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced |
US6136091A (en) * | 1997-06-23 | 2000-10-24 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
US6171393B1 (en) * | 1998-02-18 | 2001-01-09 | Komatsu Electronic Metals Co., Ltd. | Seed crystal and method of manufacturing single crystal |
US6342312B2 (en) * | 1996-03-22 | 2002-01-29 | Canon Kabushiki Kaisha | Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same |
US20020100410A1 (en) * | 2001-01-26 | 2002-08-01 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
US20020118317A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of forming an LCD with predominantly <100> polycrystalline silicon regions |
US20020117718A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of forming predominantly <100> polycrystalline silicon thin film transistors |
US20020119644A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films |
US20020117666A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of forming thin film transistors on predominantly <100> polycrystalline silicon films |
US20020139297A1 (en) * | 1999-04-30 | 2002-10-03 | Mitsubishi Materials Corporation | Method for producing crystalline silicon |
US20020174825A1 (en) * | 2001-05-18 | 2002-11-28 | Gunther Wehrhan | Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei |
US20030029376A1 (en) * | 2000-03-13 | 2003-02-13 | Snyder David W | Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
US20030047130A1 (en) * | 2001-08-29 | 2003-03-13 | Memc Electronic Materials, Inc. | Process for eliminating neck dislocations during czochralski crystal growth |
US20030080451A1 (en) * | 2001-10-23 | 2003-05-01 | Kyocera Corporation | Apparatus and method for manufacturing semiconductor grains |
US20030101924A1 (en) * | 2001-11-15 | 2003-06-05 | Memc Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
US20030209186A1 (en) * | 2000-02-22 | 2003-11-13 | Hiroyo Haga | Controlled neck growth process for single crystal silicon |
US20030217689A1 (en) * | 2002-05-27 | 2003-11-27 | Canon Kabushiki Kaisha | Method of producing crystal and apparatus for producing crystal |
US20040129201A1 (en) * | 2002-12-23 | 2004-07-08 | Hyon-Jong Cho | Silicon wafer and method for producing silicon single crystal |
US6769473B1 (en) * | 1995-05-29 | 2004-08-03 | Ube Industries, Ltd. | Method of shaping semisolid metals |
US20040211496A1 (en) * | 2003-04-25 | 2004-10-28 | Crystal Systems, Inc. | Reusable crucible for silicon ingot growth |
US20040261691A1 (en) * | 2003-06-25 | 2004-12-30 | Kentaro Doguchi | Crystallization apparatus and method |
US20050072976A1 (en) * | 2003-10-07 | 2005-04-07 | Matrix Semiconductor, Inc. | Uniform seeding to control grain and defect density of crystallized silicon for use in sub-micron thin film transistors |
US20050120944A1 (en) * | 2003-12-03 | 2005-06-09 | Hong Young H. | Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same |
US6913649B2 (en) * | 2003-06-23 | 2005-07-05 | Sharp Laboratories Of America, Inc. | System and method for forming single-crystal domains using crystal seeds |
US6926876B2 (en) * | 2002-01-17 | 2005-08-09 | Paul V. Kelsey | Plasma production of polycrystalline silicon |
US20050211408A1 (en) * | 2004-03-25 | 2005-09-29 | Bullied Steven J | Single crystal investment cast components and methods of making same |
US20050221569A1 (en) * | 2004-03-31 | 2005-10-06 | Nec Corporation | Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor |
WO2005092791A1 (en) * | 2004-03-29 | 2005-10-06 | Kyocera Corporation | Silicon casting device and multicrystal silicon ingot producing method |
US20060280945A1 (en) * | 2003-06-27 | 2006-12-14 | Didier Pribat | Method of synthesising a crystalline material and material thus obtained |
US20070028835A1 (en) * | 2005-05-02 | 2007-02-08 | Norichika Yamauchi | Crucible apparatus and method of solidifying a molten material |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51149824A (en) * | 1975-06-18 | 1976-12-23 | Nippon Kokan Kk | Downwardly divergent mold |
JPS6055567B2 (en) | 1981-05-19 | 1985-12-05 | 川崎製鉄株式会社 | Manufacturing method of non-oriented silicon steel sheet with low iron loss |
DE3929635A1 (en) | 1989-09-06 | 1991-03-07 | Siemens Ag | Solid particle sepn. from silicon melt - by time-variable crucible rotation during directional solidification |
GB2279585B (en) | 1993-07-08 | 1996-11-20 | Crystalox Ltd | Crystallising molten materials |
JP4185575B2 (en) | 1995-12-26 | 2008-11-26 | ゼロックス コーポレイション | Epitaxial crystallization process |
JPH09183686A (en) | 1995-12-27 | 1997-07-15 | Shin Etsu Handotai Co Ltd | Method and apparatus for pulling up single crystal |
JPH107493A (en) * | 1996-06-20 | 1998-01-13 | Sharp Corp | Production of silicon semiconductor substrate and substrate for solar cell |
US5751038A (en) * | 1996-11-26 | 1998-05-12 | Philips Electronics North America Corporation | Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers |
JP3852147B2 (en) * | 1996-12-27 | 2006-11-29 | Jfeスチール株式会社 | Method for producing polycrystalline silicon ingot for solar cell |
US6162705A (en) * | 1997-05-12 | 2000-12-19 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
JP3523986B2 (en) * | 1997-07-02 | 2004-04-26 | シャープ株式会社 | Method and apparatus for manufacturing polycrystalline semiconductor |
JP3670493B2 (en) | 1998-10-09 | 2005-07-13 | 東芝セラミックス株式会社 | Single crystal pulling device |
JP2000169281A (en) | 1998-12-07 | 2000-06-20 | Komatsu Electronic Metals Co Ltd | Apparatus for pulling crystal substance |
JP3872233B2 (en) | 1999-06-29 | 2007-01-24 | 京セラ株式会社 | Silicon casting method |
JP3931322B2 (en) | 2000-01-11 | 2007-06-13 | 三菱マテリアル株式会社 | Silicon ingot casting mold and manufacturing method thereof |
JP4521933B2 (en) | 2000-02-22 | 2010-08-11 | エム・イー・エム・シー株式会社 | Method for growing silicon single crystal |
US6423136B1 (en) * | 2000-03-20 | 2002-07-23 | Carl Francis Swinehart | Crucible for growing macrocrystals |
US6277351B1 (en) * | 2000-03-20 | 2001-08-21 | Carl Francis Swinehart | Crucible for growing macrocrystals |
JP2002220296A (en) | 2000-11-24 | 2002-08-09 | Sumitomo Metal Ind Ltd | Device for crystal pulling |
US6849121B1 (en) * | 2001-04-24 | 2005-02-01 | The United States Of America As Represented By The Secretary Of The Air Force | Growth of uniform crystals |
JP3724571B2 (en) | 2002-01-17 | 2005-12-07 | 信越半導体株式会社 | Silicon single crystal manufacturing method and silicon single crystal manufacturing apparatus |
NO20022881L (en) | 2002-06-17 | 2003-12-18 | Elkem Materials | Method and apparatus for granulating metal melts |
JP4357810B2 (en) | 2002-07-25 | 2009-11-04 | 三菱マテリアル株式会社 | Casting apparatus and casting method |
CN1212432C (en) | 2002-08-07 | 2005-07-27 | 中国科学院物理研究所 | Control method for seed crystal orientation in crystal growth process and its special clamp |
JP4081411B2 (en) | 2003-07-29 | 2008-04-23 | 京セラ株式会社 | Silicon casting mold and manufacturing method thereof |
JP4081413B2 (en) | 2003-07-31 | 2008-04-23 | 京セラ株式会社 | Silicon casting mold and manufacturing method thereof |
CN1485467A (en) | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | Growth apparatus for large-areaed crystal by temperature gradient technique and crystal growth method thereof |
JP4328161B2 (en) | 2003-09-24 | 2009-09-09 | 京セラ株式会社 | Silicon casting mold |
JP2005104743A (en) | 2003-09-26 | 2005-04-21 | Kyocera Corp | Silicon casting mold |
JP2005152987A (en) | 2003-11-27 | 2005-06-16 | Kyocera Corp | Mold for casting silicon and its production method |
JP4497943B2 (en) | 2004-01-29 | 2010-07-07 | 京セラ株式会社 | Silicon casting mold and silicon casting apparatus using the same |
JP2005281068A (en) | 2004-03-30 | 2005-10-13 | Toshiba Ceramics Co Ltd | Silicon seed crystal and growth method of silicon single crystal |
JP4571826B2 (en) | 2004-06-11 | 2010-10-27 | 日本電信電話株式会社 | Single crystal manufacturing method |
JP4736401B2 (en) | 2004-11-02 | 2011-07-27 | 住友金属工業株式会社 | Method for producing silicon carbide single crystal |
JP4318635B2 (en) | 2004-12-28 | 2009-08-26 | シャープ株式会社 | Plate crystal manufacturing apparatus and manufacturing method |
EP1851367B1 (en) * | 2005-02-03 | 2012-08-08 | Rec Scanwafer AS | Method and device for producing oriented solidified blocks made of semi-conductor material |
JP2006219352A (en) | 2005-02-10 | 2006-08-24 | Canon Inc | Apparatus and method for manufacturing single crystal |
WO2006093099A1 (en) * | 2005-02-28 | 2006-09-08 | Kyocera Corporation | Polycrystalline silicon substrate, polycrystalline silicon ingot, methods for producing those, photoelectric converter and photoelectric conversion module |
JP2007063049A (en) * | 2005-08-30 | 2007-03-15 | Kyocera Corp | Method for manufacturing semiconductor ingot |
JP4872283B2 (en) | 2005-09-12 | 2012-02-08 | パナソニック株式会社 | Single crystal manufacturing apparatus and manufacturing method |
CA2636033A1 (en) * | 2006-01-20 | 2007-07-26 | Bp Corporation North America Inc. | Methods and apparatuses for manufacturing geometric multi-crystalline cast silicon and geometric multi-crystalline cast silicon bodies for photovoltaics |
ES2593478T3 (en) | 2006-04-07 | 2016-12-09 | Merck Patent Gmbh | Manufacture of monolithic separation columns |
DE102006017622B4 (en) | 2006-04-12 | 2008-03-27 | Schott Ag | Method and device for producing multicrystalline silicon |
US20080122042A1 (en) * | 2006-11-27 | 2008-05-29 | Michael Goldstein | Applications of polycrystalline wafers |
-
2008
- 2008-07-16 KR KR1020107003501A patent/KR20100049078A/en not_active Application Discontinuation
- 2008-07-16 EP EP08781905A patent/EP2179079A1/en not_active Withdrawn
- 2008-07-16 AU AU2008279415A patent/AU2008279415A1/en not_active Abandoned
- 2008-07-16 JP JP2010517140A patent/JP5380442B2/en not_active Expired - Fee Related
- 2008-07-16 US US12/669,521 patent/US20100203350A1/en not_active Abandoned
- 2008-07-16 CN CN200880025474A patent/CN101755077A/en active Pending
- 2008-07-16 CN CN200880025411A patent/CN101755075A/en active Pending
- 2008-07-16 EP EP08826605A patent/EP2183410A1/en not_active Withdrawn
- 2008-07-16 US US12/669,504 patent/US20100197070A1/en not_active Abandoned
- 2008-07-16 JP JP2010518295A patent/JP2011528308A/en active Pending
- 2008-07-16 US US12/669,534 patent/US8440157B2/en not_active Expired - Fee Related
- 2008-07-16 WO PCT/US2008/070196 patent/WO2009014961A1/en active Application Filing
- 2008-07-16 WO PCT/US2008/070206 patent/WO2009014963A1/en active Application Filing
- 2008-07-16 WO PCT/US2008/070202 patent/WO2009014962A1/en active Application Filing
- 2008-07-16 AU AU2008279417A patent/AU2008279417B2/en not_active Ceased
- 2008-07-16 KR KR1020107003500A patent/KR20100049077A/en not_active Application Discontinuation
- 2008-07-18 TW TW097127405A patent/TW200909619A/en unknown
-
2013
- 2013-03-28 US US13/851,996 patent/US8591851B2/en not_active Expired - Fee Related
- 2013-10-18 US US14/057,371 patent/US8871169B2/en not_active Expired - Fee Related
-
2014
- 2014-09-30 US US14/502,372 patent/US20150013591A1/en not_active Abandoned
Patent Citations (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3156549A (en) * | 1958-04-04 | 1964-11-10 | Du Pont | Method of melting silicon |
US3664411A (en) * | 1969-10-25 | 1972-05-23 | Gkn Group Services Ltd | Die-casting apparatus with ceramic shot duct liner |
US3581804A (en) * | 1970-05-11 | 1971-06-01 | Hamilton Die Cast Inc | Expansion gap compensating system for a die |
US3653432A (en) * | 1970-09-01 | 1972-04-04 | Us Army | Apparatus and method for unidirectionally solidifying high temperature material |
US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
US4101624A (en) * | 1974-03-06 | 1978-07-18 | Ppg Industries, Inc. | Method of casting silicon |
US4094621A (en) * | 1974-12-13 | 1978-06-13 | Karl Hehl | Die closing unit with oversize injection molding die |
US4382838A (en) * | 1975-02-28 | 1983-05-10 | Wacker-Chemie Gmbh | Novel silicon crystals and process for their preparation |
US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
US4175610A (en) * | 1977-10-07 | 1979-11-27 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process and apparatus for the semicontinuous production of silicon moldings |
US4834166A (en) * | 1986-01-10 | 1989-05-30 | Akio Nakano | Die casting machine |
US5363799A (en) * | 1987-08-08 | 1994-11-15 | Canon Kabushiki Kaisha | Method for growth of crystal |
US5205872A (en) * | 1988-12-10 | 1993-04-27 | Kawasaki Steel Corporation | Method of producing crystal bodies having controlled crystalline orientation |
US5229082A (en) * | 1990-01-25 | 1993-07-20 | Westinghouse Electric Corp. | Melt replenishment system for dendritic web growth |
US5211802A (en) * | 1990-03-30 | 1993-05-18 | Osaka Titanium Co., Ltd. | Method for producing silicon single crystal from polycrystalline rod formed by continous casting |
US5264070A (en) * | 1990-10-09 | 1993-11-23 | Motorola, Inc. | Method of growth-orientation of a crystal on a device using an oriented seed layer |
US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
US5324488A (en) * | 1991-03-01 | 1994-06-28 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoff M.B.H. | Continuous liquid silicon recharging process in czochralski crucible pulling |
US5242531A (en) * | 1991-03-01 | 1993-09-07 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. | Continuous liquid silicon recharging process in czochralski crucible pulling |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
US5340410A (en) * | 1991-11-08 | 1994-08-23 | Siemens Aktiengesellschaft | Method for manufacturing polycrystalline silicon thin-film solar cells |
US5753038A (en) * | 1992-06-08 | 1998-05-19 | Air Products And Chemicals, Inc. | Method for the growth of industrial crystals |
US5614019A (en) * | 1992-06-08 | 1997-03-25 | Air Products And Chemicals, Inc. | Method for the growth of industrial crystals |
US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
US5431869A (en) * | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
US5549746A (en) * | 1993-09-24 | 1996-08-27 | General Electric Company | Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal |
US5759879A (en) * | 1995-04-10 | 1998-06-02 | Sharp Kabushiki Kaisha | Method for forming polycrystalline silicon film and method for fabricating thin-film transistor |
US6851466B2 (en) * | 1995-05-29 | 2005-02-08 | Ube Industries, Ltd. | Method and apparatus for shaping semisolid metals |
US6769473B1 (en) * | 1995-05-29 | 2004-08-03 | Ube Industries, Ltd. | Method of shaping semisolid metals |
US20040238150A1 (en) * | 1995-05-29 | 2004-12-02 | Ube Industries, Ltd | Method and apparatus for shaping semisolid metals |
US5714004A (en) * | 1995-06-15 | 1998-02-03 | Sharp Kabushiki Kaisha | Process for producing polycrystalline semiconductors |
US5707744A (en) * | 1995-12-26 | 1998-01-13 | Xerox Corporation | Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates |
US6027563A (en) * | 1996-02-24 | 2000-02-22 | Ald Vacuum Technologies Gmbh | Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber |
US6342312B2 (en) * | 1996-03-22 | 2002-01-29 | Canon Kabushiki Kaisha | Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same |
US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
US5959314A (en) * | 1997-03-07 | 1999-09-28 | Sharp Laboratories Of America, Inc. | Polycrystalline silicon from the crystallization of microcrystalline silicon |
US5827773A (en) * | 1997-03-07 | 1998-10-27 | Sharp Microelectronics Technology, Inc. | Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon |
US6136091A (en) * | 1997-06-23 | 2000-10-24 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
US6171393B1 (en) * | 1998-02-18 | 2001-01-09 | Komatsu Electronic Metals Co., Ltd. | Seed crystal and method of manufacturing single crystal |
US20020014574A1 (en) * | 1998-02-26 | 2002-02-07 | Mitsubishi Materials Corporation | Mold for producing silicon ingot and method for fabricating the same |
US6334603B1 (en) * | 1998-02-26 | 2002-01-01 | Mitsubishi Materials Corporation | Mold for producing silicon ingot and method for fabricating the same |
EP0949358A2 (en) * | 1998-02-26 | 1999-10-13 | Mitsubishi Materials Corporation | Mold for producing silicon ingot and method for fabricating the same |
US6732992B2 (en) * | 1998-02-26 | 2004-05-11 | Mitsubishi Materials Corporation | Mold for producing silicon ingot and method for fabricating the same |
US6120602A (en) * | 1998-10-15 | 2000-09-19 | Starmet Corporation | Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced |
US6106739A (en) * | 1998-10-15 | 2000-08-22 | Starmet Corporation | Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced |
US6106614A (en) * | 1998-10-15 | 2000-08-22 | Starmet Corp | Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced |
US20020139297A1 (en) * | 1999-04-30 | 2002-10-03 | Mitsubishi Materials Corporation | Method for producing crystalline silicon |
US6869477B2 (en) * | 2000-02-22 | 2005-03-22 | Memc Electronic Materials, Inc. | Controlled neck growth process for single crystal silicon |
US20030209186A1 (en) * | 2000-02-22 | 2003-11-13 | Hiroyo Haga | Controlled neck growth process for single crystal silicon |
US20030029376A1 (en) * | 2000-03-13 | 2003-02-13 | Snyder David W | Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
US6805745B2 (en) * | 2000-03-13 | 2004-10-19 | Ii-Vi Incorporated | Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
US20020100410A1 (en) * | 2001-01-26 | 2002-08-01 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
US6846539B2 (en) * | 2001-01-26 | 2005-01-25 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
US20050150445A1 (en) * | 2001-01-26 | 2005-07-14 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
US20020117718A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of forming predominantly <100> polycrystalline silicon thin film transistors |
US20030064551A1 (en) * | 2001-02-28 | 2003-04-03 | Sharp Laboratories Of America, Inc. | Method of forming predominantly <100> polycrystalline silicon thin film transistors |
US20030025134A1 (en) * | 2001-02-28 | 2003-02-06 | Apostolos Voutsas | Predominantly <100> polycrystalline silicon thin film transistor |
US20020118317A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of forming an LCD with predominantly <100> polycrystalline silicon regions |
US6664147B2 (en) * | 2001-02-28 | 2003-12-16 | Sharp Laboratories Of America, Inc. | Method of forming thin film transistors on predominantly <100> polycrystalline silicon films |
US6686978B2 (en) * | 2001-02-28 | 2004-02-03 | Sharp Laboratories Of America, Inc. | Method of forming an LCD with predominantly <100> polycrystalline silicon regions |
US20020117666A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of forming thin film transistors on predominantly <100> polycrystalline silicon films |
US20020119644A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films |
US6635555B2 (en) * | 2001-02-28 | 2003-10-21 | Sharp Laboratories Of America, Inc. | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films |
US6818484B2 (en) * | 2001-02-28 | 2004-11-16 | Sharp Laboratories Of America, Inc. | Method of forming predominantly <100> polycrystalline silicon thin film transistors |
US20020174825A1 (en) * | 2001-05-18 | 2002-11-28 | Gunther Wehrhan | Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei |
US20030047130A1 (en) * | 2001-08-29 | 2003-03-13 | Memc Electronic Materials, Inc. | Process for eliminating neck dislocations during czochralski crystal growth |
US20030080451A1 (en) * | 2001-10-23 | 2003-05-01 | Kyocera Corporation | Apparatus and method for manufacturing semiconductor grains |
US7001543B2 (en) * | 2001-10-23 | 2006-02-21 | Kyocera Corporation | Apparatus and method for manufacturing semiconductor grains |
US20030101924A1 (en) * | 2001-11-15 | 2003-06-05 | Memc Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
US6926876B2 (en) * | 2002-01-17 | 2005-08-09 | Paul V. Kelsey | Plasma production of polycrystalline silicon |
US20030217689A1 (en) * | 2002-05-27 | 2003-11-27 | Canon Kabushiki Kaisha | Method of producing crystal and apparatus for producing crystal |
US20040129201A1 (en) * | 2002-12-23 | 2004-07-08 | Hyon-Jong Cho | Silicon wafer and method for producing silicon single crystal |
US20040211496A1 (en) * | 2003-04-25 | 2004-10-28 | Crystal Systems, Inc. | Reusable crucible for silicon ingot growth |
US6913649B2 (en) * | 2003-06-23 | 2005-07-05 | Sharp Laboratories Of America, Inc. | System and method for forming single-crystal domains using crystal seeds |
US20040261691A1 (en) * | 2003-06-25 | 2004-12-30 | Kentaro Doguchi | Crystallization apparatus and method |
US20060280945A1 (en) * | 2003-06-27 | 2006-12-14 | Didier Pribat | Method of synthesising a crystalline material and material thus obtained |
US20050072976A1 (en) * | 2003-10-07 | 2005-04-07 | Matrix Semiconductor, Inc. | Uniform seeding to control grain and defect density of crystallized silicon for use in sub-micron thin film transistors |
US20050120944A1 (en) * | 2003-12-03 | 2005-06-09 | Hong Young H. | Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same |
US20050211408A1 (en) * | 2004-03-25 | 2005-09-29 | Bullied Steven J | Single crystal investment cast components and methods of making same |
WO2005092791A1 (en) * | 2004-03-29 | 2005-10-06 | Kyocera Corporation | Silicon casting device and multicrystal silicon ingot producing method |
US7867334B2 (en) * | 2004-03-29 | 2011-01-11 | Kyocera Corporation | Silicon casting apparatus and method of producing silicon ingot |
US20050221569A1 (en) * | 2004-03-31 | 2005-10-06 | Nec Corporation | Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor |
US20070028835A1 (en) * | 2005-05-02 | 2007-02-08 | Norichika Yamauchi | Crucible apparatus and method of solidifying a molten material |
Non-Patent Citations (1)
Title |
---|
HP Materials Solutions, Inc. product data sheet on "Carbon felt and graphite felt," available at: http://www.hpmsgraphite.com/graphite-felt.html. * |
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AU2008279415A1 (en) | 2009-01-29 |
US20110129403A1 (en) | 2011-06-02 |
WO2009014962A1 (en) | 2009-01-29 |
CN101755075A (en) | 2010-06-23 |
JP2010534179A (en) | 2010-11-04 |
TW200909619A (en) | 2009-03-01 |
US20140048012A1 (en) | 2014-02-20 |
WO2009014963A1 (en) | 2009-01-29 |
US8440157B2 (en) | 2013-05-14 |
KR20100049077A (en) | 2010-05-11 |
US20100203350A1 (en) | 2010-08-12 |
US20130213297A1 (en) | 2013-08-22 |
EP2179079A1 (en) | 2010-04-28 |
US8591851B2 (en) | 2013-11-26 |
JP2011528308A (en) | 2011-11-17 |
KR20100049078A (en) | 2010-05-11 |
US8871169B2 (en) | 2014-10-28 |
CN101755077A (en) | 2010-06-23 |
AU2008279417A1 (en) | 2009-01-29 |
US20150013591A1 (en) | 2015-01-15 |
WO2009014961A1 (en) | 2009-01-29 |
JP5380442B2 (en) | 2014-01-08 |
AU2008279417B2 (en) | 2012-06-21 |
EP2183410A1 (en) | 2010-05-12 |
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