US20100282695A1 - High strength camfer on quartzware - Google Patents
High strength camfer on quartzware Download PDFInfo
- Publication number
- US20100282695A1 US20100282695A1 US12/613,525 US61352509A US2010282695A1 US 20100282695 A1 US20100282695 A1 US 20100282695A1 US 61352509 A US61352509 A US 61352509A US 2010282695 A1 US2010282695 A1 US 2010282695A1
- Authority
- US
- United States
- Prior art keywords
- structural member
- chamfer
- outer edge
- defined distance
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/0084—Charging; Manipulation of SC or SC wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0006—Composite supporting structures
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
Definitions
- This invention relates to a structural member for use in extremely high temperature environments such as those found during the processing and manufacture of silicon wafers and the like.
- Durable and strong structural members for use in extremely high temperature environments such as a range between 900 degrees Celsius to 1500 degrees Celsius, are used in a wide variety of applications.
- the manufacture of semi-conductors from silicon frequently requires heating silicon wafers and the like to within this temperature range.
- the wafers are stacked in a rack-type structure, which is referred to in the industry as a “boat”, and the rack containing the plurality of wafers is placed in a furnace.
- the structural members forming the rack must be sufficiently strong to hold the wafers, even at these extreme temperatures, without weakening due to the extreme heat.
- Structural members operating within these extreme temperatures must be formed with materials having melting points well above the range of temperatures in which these structural members are expected to operate. Steel and other alloy-based materials commonly used as structural members in lower temperature environments vaporize and/or melt at these extreme temperatures rendering them useless. Accordingly, known materials for constructing structural members used in such extremely high temperature environments are limited.
- fused silica glass which is also referred to in the industry as fused quartz and collectively refers to materials containing at least one of a group of minerals that are commonly referred to as the “SiO 2 ” group.
- This material has a high melting/vaporization point, and can be processed and or selected so as to release few, if any, impurities during the heating process.
- fused silica glass can be formed into structural members, and it can be joined together with other structural members, usually by heat welding, to make a boat or the like.
- fused silica glass for use as a structural member, it has several drawbacks.
- component parts made from these hard materials like Quartz glass are often stacked on top of each.
- the interface surfaces of these parts are not completely flat and smooth.
- the product is fire polished on corner or edge to make them smooth.
- the corner or edge when fire polished “rolls” due to surface tension.
- this rolled edge tends to produce high points (A) along exterior contact surfaces 48 ′, which are usually referred to as burms or bumps.
- burms or bumps which are usually referred to as burms or bumps.
- all the weight of the stacked parts in the rack (B) is supported by these high points A as shown.
- these points (A) serve as substantial points of contact between the boat and the surface the boat rests on during the extreme temperature heating processes the rack is subjected to, and these points of contact tend to develop high stress and are prone to breaking and cracking during static and dynamic loading.
- the present invention is structural member for use in high temperature environments that has substantially flat exterior for resting on a flat surface.
- the substantially flat exterior of the structural member has a low angle chamfer that is preferably less than 45 degrees and that rises far enough above the flat surface so that when the edge is rolled using conventional processing methods, the resulting high point (burm or bump) does not extend a distance far enough to contact with the surface.
- FIG. 1 (PRIOR ART) is an enlarged, partial front view of prior art structural member for use in extremely high temperatures.
- FIG. 2A is a front plan view of a structural member for use in extremely high temperatures in accordance with an embodiment of the present invention.
- FIG. 2B is a top plan view of the structural member of FIG. 2A .
- FIG. 2C is an enlarged, partial front plan view of the structural member of FIG. 2A taken along arrow 2 C of FIG. 2A .
- FIG. 3 is an enlarged, partial front plan view of a lower surface of the structural member of FIG. 2A in accordance with an embodiment of the present invention.
- FIG. 4 is an enlarged, partial front plan view of a lower surface of the structural member of FIG. 2A in accordance with an alternative embodiment of the present invention.
- FIG. 5 is an enlarged, partial front plan view of a lower surface of the structural member of FIG. 2A in accordance with a second alternative embodiment of the present invention.
- FIG. 6 is an enlarged, partial front plan view of a lower surface of the structural member of FIG. 2A in accordance with a third alternative embodiment of the present invention.
- FIGS. 2A-6 A structural member 30 for use in a high temperature environment is disclosed in FIGS. 2A-6 .
- the structural member 30 is preferably formed of fused silica or the like, which is commonly known in the industry as quartz.
- a plurality of structural members 30 are joined together using conventional methods to form a heating boat 36 used to hold silicon wafers 37 ( FIG. 2B ) and the like during high temperature heating in a furnace.
- the heating boat 36 can include a plurality of elongate structural members 30 aligned substantially parallel to teach other and joined at their respective ends by an upper member 38 and a lower member 40 .
- a plurality of spaced-apart notches 42 is preferably provided along each structural member 30 .
- the notches 42 in each structural member 30 are aligned substantially horizontally to form substantially horizontal rows 44 of like notches 42 within the structural members 30 .
- a silicon wafer 37 (FIG. 2 B) may be secured to the heating boat 36 by being placed within one of the rows 44 of notches 42 .
- a plurality of silicon wafers may be secured to the heating boat 36 and spaced-apart from each other by being placed in separate rows 44 of notches 42 on the structural members 30 .
- the upper and lower members 38 , 40 are preferably planar and have a substantially circular shape.
- three structural members 30 are joined to the upper and lower members 38 , 40 and spaced apart from each other as shown so as to allow a silicon wafer 37 ( FIG. 2B ) to be easily inserted and removed through an open side 46 formed thereby.
- the lower exterior side 48 of the lower member 40 has a surface engaging structure 100 configured as shown in one of the embodiments of FIGS. 2A , 2 C, and 3 - 6 .
- a low angle chamfer with and angle ⁇ acute over ( ⁇ ) ⁇ that is less than 45 degrees is provided so that the chamfer will rise far enough above the surface the lower member 40 rests on so that when the edge is rolled the high point 110 (burm or bump) does not extend a distance 142 ( FIG. 6 ) so as to contact the surface.
- a large radius 112 about this intersection point 104 is provided. This radius 112 reduces the effects of any bump or burm 110 arising from the fire polishing process.
- the chamfer extends a distance 140 ( FIG. 6 ) that is 2 to 5 millimeters from the outer edge of the member 40 .
Abstract
A structural member for use in extremely high temperature environments that has substantially flat exterior for resting on a flat surface. The substantially flat exterior of the structural member has a low angle chamfer that is preferably less than 45 degrees and that rises far enough above the flat surface so that when the edge is rolled using conventional processing methods, the resulting high point does not extend a distance far enough to contact with the surface.
Description
- This application claims priority to U.S. provisional patent application Ser. No. 61/111,683, filed on Nov. 5, 2008.
- This invention relates to a structural member for use in extremely high temperature environments such as those found during the processing and manufacture of silicon wafers and the like.
- Durable and strong structural members for use in extremely high temperature environments, such as a range between 900 degrees Celsius to 1500 degrees Celsius, are used in a wide variety of applications. For example, in the semi-conductor industry, the manufacture of semi-conductors from silicon frequently requires heating silicon wafers and the like to within this temperature range.
- Usually, the wafers are stacked in a rack-type structure, which is referred to in the industry as a “boat”, and the rack containing the plurality of wafers is placed in a furnace. The structural members forming the rack must be sufficiently strong to hold the wafers, even at these extreme temperatures, without weakening due to the extreme heat. Moreover, it is desirable for the rack to be reusable. Accordingly, the members forming the rack, the stand on which the rack is placed, and the even the furnace structures themselves must be sufficiently durable and strong to withstand numerous heating and cooling cycles.
- Structural members operating within these extreme temperatures must be formed with materials having melting points well above the range of temperatures in which these structural members are expected to operate. Steel and other alloy-based materials commonly used as structural members in lower temperature environments vaporize and/or melt at these extreme temperatures rendering them useless. Accordingly, known materials for constructing structural members used in such extremely high temperature environments are limited.
- Moreover, in cases where a structural member is used in an extremely high temperature to facilitate semi-conductor manufacture, it is important that the structural member limit the amount of impurities released by vaporization during the heating process.
- A particularly favorable material used as a structural member in the construction of boats for use in semi-conductor fabrication is fused silica glass, which is also referred to in the industry as fused quartz and collectively refers to materials containing at least one of a group of minerals that are commonly referred to as the “SiO2” group. This material has a high melting/vaporization point, and can be processed and or selected so as to release few, if any, impurities during the heating process. Moreover, fused silica glass can be formed into structural members, and it can be joined together with other structural members, usually by heat welding, to make a boat or the like.
- Despite the benefits of fused silica glass for use as a structural member, it has several drawbacks. For example, component parts made from these hard materials like Quartz glass are often stacked on top of each. In some cases the interface surfaces of these parts are not completely flat and smooth. In many cases the product is fire polished on corner or edge to make them smooth. The corner or edge when fire polished “rolls” due to surface tension. As shown in
FIG. 1 (PRIOR ART), this rolled edge tends to produce high points (A) alongexterior contact surfaces 48′, which are usually referred to as burms or bumps. Often times, all the weight of the stacked parts in the rack (B) is supported by these high points A as shown. Accordingly, these points (A) serve as substantial points of contact between the boat and the surface the boat rests on during the extreme temperature heating processes the rack is subjected to, and these points of contact tend to develop high stress and are prone to breaking and cracking during static and dynamic loading. - In an attempt to reduce or minimize this characteristic, some extreme high temperature rack manufacturers may chamfer the parts with a 45 deg chamfer from 0.2 mm to 1 mm then fire polish the surface and edge. However, these actions still tend to produce high points (A,
FIG. 1 (PRIOR ART)). - Accordingly, despite the available structural members for use in extremely high temperature environments, there remains a need for an economical thermally resistant, structural member that is more durable than the known structures, particularly during repeated heating and cooling cycles and that does not have bumps or high points at exterior contact surfaces that promote high stress fractures and the like. In addition to other benefits that will become apparent in the following disclosure, the present invention fulfills these needs.
- The present invention is structural member for use in high temperature environments that has substantially flat exterior for resting on a flat surface. The substantially flat exterior of the structural member has a low angle chamfer that is preferably less than 45 degrees and that rises far enough above the flat surface so that when the edge is rolled using conventional processing methods, the resulting high point (burm or bump) does not extend a distance far enough to contact with the surface.
-
FIG. 1 (PRIOR ART) is an enlarged, partial front view of prior art structural member for use in extremely high temperatures. -
FIG. 2A is a front plan view of a structural member for use in extremely high temperatures in accordance with an embodiment of the present invention. -
FIG. 2B is a top plan view of the structural member ofFIG. 2A . -
FIG. 2C is an enlarged, partial front plan view of the structural member ofFIG. 2A taken along arrow 2C ofFIG. 2A . -
FIG. 3 is an enlarged, partial front plan view of a lower surface of the structural member ofFIG. 2A in accordance with an embodiment of the present invention. -
FIG. 4 is an enlarged, partial front plan view of a lower surface of the structural member ofFIG. 2A in accordance with an alternative embodiment of the present invention. -
FIG. 5 is an enlarged, partial front plan view of a lower surface of the structural member ofFIG. 2A in accordance with a second alternative embodiment of the present invention. -
FIG. 6 is an enlarged, partial front plan view of a lower surface of the structural member ofFIG. 2A in accordance with a third alternative embodiment of the present invention. - A
structural member 30 for use in a high temperature environment is disclosed inFIGS. 2A-6 . Thestructural member 30 is preferably formed of fused silica or the like, which is commonly known in the industry as quartz. - Preferably and referring to
FIG. 2A-C , a plurality ofstructural members 30 are joined together using conventional methods to form aheating boat 36 used to hold silicon wafers 37 (FIG. 2B ) and the like during high temperature heating in a furnace. Theheating boat 36 can include a plurality of elongatestructural members 30 aligned substantially parallel to teach other and joined at their respective ends by anupper member 38 and alower member 40. - A plurality of spaced-apart
notches 42 is preferably provided along eachstructural member 30. Preferably, thenotches 42 in eachstructural member 30 are aligned substantially horizontally to form substantially horizontal rows 44 oflike notches 42 within thestructural members 30. Accordingly, a silicon wafer 37 (FIG. 2B) may be secured to theheating boat 36 by being placed within one of the rows 44 ofnotches 42. More preferably, a plurality of silicon wafers may be secured to theheating boat 36 and spaced-apart from each other by being placed in separate rows 44 ofnotches 42 on thestructural members 30. - As best shown in
FIG. 2A , the upper andlower members structural members 30 are joined to the upper andlower members FIG. 2B ) to be easily inserted and removed through anopen side 46 formed thereby. - More preferably, the lower
exterior side 48 of thelower member 40 has asurface engaging structure 100 configured as shown in one of the embodiments ofFIGS. 2A , 2C, and 3-6. Preferably, a low angle chamfer with and angle {acute over (α)} that is less than 45 degrees is provided so that the chamfer will rise far enough above the surface thelower member 40 rests on so that when the edge is rolled the high point 110 (burm or bump) does not extend a distance 142 (FIG. 6 ) so as to contact the surface. At theintersection 104 of the low angle chamfer and theprimary surface 100 there is anintersection point 104. Preferably, alarge radius 112 about thisintersection point 104 is provided. Thisradius 112 reduces the effects of any bump orburm 110 arising from the fire polishing process. More preferably, the chamfer extends a distance 140 (FIG. 6 ) that is 2 to 5 millimeters from the outer edge of themember 40. - The foregoing steps will result in a
surface engaging structure 100 with a fire polishedsurface 48 that has greatly reduced rolled bumps and will result in a less facture prone interface of mating surfaces. - Having here described preferred embodiments of the present invention, it is anticipated that other modifications may be made thereto within the scope of the invention by individuals skilled in the art. Thus, although preferred, more preferred, and alternative embodiments of the present invention have been described, it will be appreciated that the spirit and scope of the invention is not limited to those embodiments, but extend to the various modifications and equivalents as defined in the appended claims.
Claims (10)
1. A structural member for use in extremely high temperature environments having:
a frame having an upper surface and a lower surface;
said lower surface having a substantially planar exterior engaging surface and an outer edge;
a chamfer extending from said substantially planar exterior engaging surface toward said outer edge by a defined distance away from said exterior engaging surface at said outer edge such that when the lower surface is fire polished resulting burms along said outer edge are shorter than said defined distance.
2. The structural member of claim 1 , wherein said structural member is a boat for heating silicon wafers therein.
3. The structural member of claim 1 , wherein said structural member is formed of materials selected from SiO2 group.
4. The structural member of claim 3 , wherein said structural member is formed of fused silica.
5. The structural member of claim 1 , wherein said chamfer extends inwards from said outer edge by a second defined distance.
6. The structural member of claim 5 , wherein said second defined distance is between 2 to 5 millimeters.
7. The structural member of claim 1 , wherein said defined distance is between 0.25 to 2 millimeters.
8. The structural member of claim 1 , further including a radius transitioning from said lower to said chamfer.
9. The structural member of claim 8 , wherein said radius is large.
10. The structural member of claim 1 , wherein said chamfer angle is less than 45 degrees.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/613,525 US20100282695A1 (en) | 2008-11-05 | 2009-11-05 | High strength camfer on quartzware |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11168308P | 2008-11-05 | 2008-11-05 | |
US12/613,525 US20100282695A1 (en) | 2008-11-05 | 2009-11-05 | High strength camfer on quartzware |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100282695A1 true US20100282695A1 (en) | 2010-11-11 |
Family
ID=42153244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/613,525 Abandoned US20100282695A1 (en) | 2008-11-05 | 2009-11-05 | High strength camfer on quartzware |
Country Status (2)
Country | Link |
---|---|
US (1) | US20100282695A1 (en) |
WO (1) | WO2010054130A1 (en) |
Citations (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3610613A (en) * | 1969-03-17 | 1971-10-05 | Worden Quartz Products Inc | Quartz holder for supporting wafers |
US4872554A (en) * | 1987-07-02 | 1989-10-10 | Fluoroware, Inc. | Reinforced carrier with embedded rigid insert |
USD361752S (en) * | 1993-09-17 | 1995-08-29 | Tokyo Electron Kasbushiki Kaisha | Wafer boat or rack for holding semiconductor wafers |
USD366868S (en) * | 1993-09-29 | 1996-02-06 | Tokyo Electron Kabushiki Kaisha | Wafer boat or rack |
US5538230A (en) * | 1994-08-08 | 1996-07-23 | Sibley; Thomas | Silicon carbide carrier for wafer processing |
US5590672A (en) * | 1992-09-25 | 1997-01-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor cleaning apparatus and wafer cassette |
USD378823S (en) * | 1995-05-30 | 1997-04-15 | Tokyo Electron Limited | Wafer boat |
US5651798A (en) * | 1994-05-23 | 1997-07-29 | Advanced Micro Devices, Inc. | Workpiece monitoring process using a workpiece carrier having an identification code |
USD404016S (en) * | 1997-01-31 | 1999-01-12 | Tokyo Electron Limited | Heat retaining tube for use in a semiconductor wafer heat processing apparatus |
US5950843A (en) * | 1997-04-07 | 1999-09-14 | Shin-Etsu Polyer Co., Ltd. | Device for preventing contacting of wafers in wafer cassette |
US6089377A (en) * | 1996-08-26 | 2000-07-18 | Nec Corporation | Semiconductor wafer carrier |
US6099686A (en) * | 1994-07-22 | 2000-08-08 | Nec Corporation | Wet processing system |
US6110285A (en) * | 1997-04-15 | 2000-08-29 | Toshiba Ceramics Co., Ltd. | Vertical wafer boat |
US6378538B1 (en) * | 1999-12-13 | 2002-04-30 | Advanced Micro Devices, Inc. | Durable, multi-piece rotor for spray acid tools |
US6425168B1 (en) * | 1994-09-30 | 2002-07-30 | Shin-Etsu Handotai Co., Ltd. | Quartz glass jig for heat-treating semiconductor wafers and method for producing same |
US6432849B1 (en) * | 1998-02-04 | 2002-08-13 | Nikon Corporation | Substrate storage cassette positioning device and method |
US6450346B1 (en) * | 2000-06-30 | 2002-09-17 | Integrated Materials, Inc. | Silicon fixtures for supporting wafers during thermal processing |
US6520191B1 (en) * | 1998-10-19 | 2003-02-18 | Memc Electronic Materials, Inc. | Carrier for cleaning silicon wafers |
US20030221985A1 (en) * | 2001-05-30 | 2003-12-04 | Toshitsugu Yajima | Precision substrate storage container and retaining member therefor |
US6669253B2 (en) * | 2000-12-18 | 2003-12-30 | David W. Benzing | Wafer boat and boat holder |
US20040040885A1 (en) * | 2000-06-30 | 2004-03-04 | Boyle James E. | Silicon wafer tower with inclined support teeth |
US20050263462A1 (en) * | 2004-03-26 | 2005-12-01 | Johnson Michael L | Disk cassette system |
US7053411B2 (en) * | 2003-04-15 | 2006-05-30 | Saint-Gobain Ceramics & Plastics, Inc. | Method for treating semiconductor processing components and components formed thereby |
US7055702B1 (en) * | 2000-06-06 | 2006-06-06 | Saint-Gobain Ceramics & Plastics, Inc. | Slip resistant horizontal semiconductor wafer boat |
US20060163112A1 (en) * | 2004-08-19 | 2006-07-27 | Mark Sandifer | Reinforced structural member for high temperature operations and fabrication method |
US7270240B2 (en) * | 2002-04-05 | 2007-09-18 | Rena Sondermaschinen Gmbh | Device for accomodating substrates |
US20090308784A1 (en) * | 2008-06-13 | 2009-12-17 | Oki Semiconductor Co., Ltd. | Wafer storage carrier |
US7661544B2 (en) * | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
USD615936S1 (en) * | 2009-03-06 | 2010-05-18 | Tokyo Electron Limited | Pedestal of heat insulating cylinder for manufacturing semiconductor wafers |
-
2009
- 2009-11-05 US US12/613,525 patent/US20100282695A1/en not_active Abandoned
- 2009-11-05 WO PCT/US2009/063460 patent/WO2010054130A1/en active Application Filing
Patent Citations (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3610613A (en) * | 1969-03-17 | 1971-10-05 | Worden Quartz Products Inc | Quartz holder for supporting wafers |
US4872554A (en) * | 1987-07-02 | 1989-10-10 | Fluoroware, Inc. | Reinforced carrier with embedded rigid insert |
US5590672A (en) * | 1992-09-25 | 1997-01-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor cleaning apparatus and wafer cassette |
USD361752S (en) * | 1993-09-17 | 1995-08-29 | Tokyo Electron Kasbushiki Kaisha | Wafer boat or rack for holding semiconductor wafers |
USD366868S (en) * | 1993-09-29 | 1996-02-06 | Tokyo Electron Kabushiki Kaisha | Wafer boat or rack |
US5651798A (en) * | 1994-05-23 | 1997-07-29 | Advanced Micro Devices, Inc. | Workpiece monitoring process using a workpiece carrier having an identification code |
US6099686A (en) * | 1994-07-22 | 2000-08-08 | Nec Corporation | Wet processing system |
US5538230A (en) * | 1994-08-08 | 1996-07-23 | Sibley; Thomas | Silicon carbide carrier for wafer processing |
US6425168B1 (en) * | 1994-09-30 | 2002-07-30 | Shin-Etsu Handotai Co., Ltd. | Quartz glass jig for heat-treating semiconductor wafers and method for producing same |
USD378823S (en) * | 1995-05-30 | 1997-04-15 | Tokyo Electron Limited | Wafer boat |
US6089377A (en) * | 1996-08-26 | 2000-07-18 | Nec Corporation | Semiconductor wafer carrier |
USD404016S (en) * | 1997-01-31 | 1999-01-12 | Tokyo Electron Limited | Heat retaining tube for use in a semiconductor wafer heat processing apparatus |
US5950843A (en) * | 1997-04-07 | 1999-09-14 | Shin-Etsu Polyer Co., Ltd. | Device for preventing contacting of wafers in wafer cassette |
US6110285A (en) * | 1997-04-15 | 2000-08-29 | Toshiba Ceramics Co., Ltd. | Vertical wafer boat |
US6432849B1 (en) * | 1998-02-04 | 2002-08-13 | Nikon Corporation | Substrate storage cassette positioning device and method |
US6520191B1 (en) * | 1998-10-19 | 2003-02-18 | Memc Electronic Materials, Inc. | Carrier for cleaning silicon wafers |
US6378538B1 (en) * | 1999-12-13 | 2002-04-30 | Advanced Micro Devices, Inc. | Durable, multi-piece rotor for spray acid tools |
US7055702B1 (en) * | 2000-06-06 | 2006-06-06 | Saint-Gobain Ceramics & Plastics, Inc. | Slip resistant horizontal semiconductor wafer boat |
US20040040885A1 (en) * | 2000-06-30 | 2004-03-04 | Boyle James E. | Silicon wafer tower with inclined support teeth |
US6450346B1 (en) * | 2000-06-30 | 2002-09-17 | Integrated Materials, Inc. | Silicon fixtures for supporting wafers during thermal processing |
US6669253B2 (en) * | 2000-12-18 | 2003-12-30 | David W. Benzing | Wafer boat and boat holder |
US20030221985A1 (en) * | 2001-05-30 | 2003-12-04 | Toshitsugu Yajima | Precision substrate storage container and retaining member therefor |
US7270240B2 (en) * | 2002-04-05 | 2007-09-18 | Rena Sondermaschinen Gmbh | Device for accomodating substrates |
US7053411B2 (en) * | 2003-04-15 | 2006-05-30 | Saint-Gobain Ceramics & Plastics, Inc. | Method for treating semiconductor processing components and components formed thereby |
US20050263462A1 (en) * | 2004-03-26 | 2005-12-01 | Johnson Michael L | Disk cassette system |
US20060163112A1 (en) * | 2004-08-19 | 2006-07-27 | Mark Sandifer | Reinforced structural member for high temperature operations and fabrication method |
US7661544B2 (en) * | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
US20090308784A1 (en) * | 2008-06-13 | 2009-12-17 | Oki Semiconductor Co., Ltd. | Wafer storage carrier |
USD615936S1 (en) * | 2009-03-06 | 2010-05-18 | Tokyo Electron Limited | Pedestal of heat insulating cylinder for manufacturing semiconductor wafers |
Also Published As
Publication number | Publication date |
---|---|
WO2010054130A1 (en) | 2010-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9153466B2 (en) | Wafer boat | |
KR20160137603A (en) | Method for reducing warpage developing in glass plate due to chemical strengthening treatment, method for producing glass plate for chemical strengthening, and method for producing chemically strengthened glass plate | |
US9343304B2 (en) | Method for depositing films on semiconductor wafers | |
US8287649B2 (en) | Vertical boat for heat treatment and method for heat treatment of silicon wafer using the same | |
KR101347696B1 (en) | Vertical Heat Treatment Boat and Semiconductor Wafer Heat Treatment Method Using the Same | |
JPH09251961A (en) | Heat-treating boat | |
CN1768421B (en) | Silicon wafer heat treatment jig, and silicon wafer heat treatment method | |
US20100282695A1 (en) | High strength camfer on quartzware | |
WO2005124848A1 (en) | Heat treatment jig and semiconductor wafer heat treatment method | |
WO2004112113A1 (en) | Semiconductor wafer heat-treatment method and vertical boat for heat treatment | |
JP6399171B2 (en) | Silicon member and method for manufacturing silicon member | |
JP5061663B2 (en) | Vertical heat treatment boat and semiconductor wafer heat treatment method | |
JP2006128316A (en) | Vertical boat for heat treatment and heat treating method | |
JP5657937B2 (en) | Method for changing diameter of mold for producing quartz glass molded body and method for producing quartz glass molded body | |
KR20010062144A (en) | Substrate holder for heat treatment, heat treatment apparatus and method of substrate | |
JP2009076621A (en) | Vertical boat for heat treatment | |
JPH08102446A (en) | Wafer boat | |
US9922842B2 (en) | Heat treatment method | |
JP5724788B2 (en) | Manufacturing method of semiconductor device | |
JP6911818B2 (en) | Method for determining manufacturing conditions for epitaxial wafers and method for manufacturing epitaxial wafers | |
JPH09298236A (en) | Substrate supporting jig and substrate supporting means | |
JP5732213B2 (en) | Method for changing diameter of inscribed circle of mold for manufacturing quartz glass molded body and method for manufacturing quartz glass molded body | |
JP6290698B2 (en) | Polycrystalline silicon rod heating / quenching mounting table and method for producing pulverized polycrystalline silicon using the same | |
JP2007036105A (en) | Susceptor for silicon wafer | |
JP2005328008A (en) | Vertical boat for heat-treating semiconductor wafer, and heat treatment method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |