US20110147886A1 - Semiconductor device with fuse and method for fabricating the same - Google Patents
Semiconductor device with fuse and method for fabricating the same Download PDFInfo
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- US20110147886A1 US20110147886A1 US13/040,808 US201113040808A US2011147886A1 US 20110147886 A1 US20110147886 A1 US 20110147886A1 US 201113040808 A US201113040808 A US 201113040808A US 2011147886 A1 US2011147886 A1 US 2011147886A1
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- fuse
- polysilicon
- insulation layer
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- metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask.
Description
- The present invention claims priority of Korean patent application number 2007-0138962, filed on Dec. 27, 2007, which is incorporated by reference in its entirety.
- The present invention relates to a method for fabricating semiconductor devices. More particularly, the present invention relates to a semiconductor device with a recess gate therein and a method for fabricating the same.
- Generally, semiconductor memory devices are fabricated through a fabrication (FAB) process, for repeatedly forming circuit patterns set on a substrate to form cells with integrated circuits, and an assembly process, for packaging the substrate with the cells on a chip basis. Furthermore, an electrical die sorting (EDS) process for checking an electric characteristic of the cells over the substrate is performed between the above two processes.
- Defective cells are sorted out through the EDS process. Prepared redundancy cells substitute for the sorted defective cells by a repair process. Thus, the chips normally operate and the throughput of the semiconductor memory device increases.
- The repair process is performed by a fuse blowing method irradiating a laser beam onto a line connected to the defective cells to cut the line. The line cut by the laser beam is called a fuse. A portion surrounding the cut fuse is called a fuse portion. The fuse unit includes a fuse, an insulation layer over the fuse, and a fuse box formed by etching a portion of the insulation layer. The laser beam can be irradiated to the fuse box to cut the fuse. To successfully cut the fuse with the laser beam, it is required to properly adjust a thickness (Rox) of the insulation layer remaining over the fuse in the fuse box. That is, when the insulation layer remaining over the fuse is overly thick, explosive power of the fuse becomes increases. Thus, an adjacent fuse may be attacked or the substrate below the fuse may be cracked. When the insulation layer remaining over the fuse is overly thin, the fuse is not cut.
- A typical fuse is formed using a polysilicon plate electrode of a capacitor in a cell region. However, as semiconductor devices are highly integrated and an electric characteristic of the semiconductor devices is secured, a three-layered metal line is formed instead of a typical two-layered metal line during a metal line formation process. Furthermore, an etch target increases during a formation of the fuse unit including the fuse formed using the polysilicon plate electrode. In the formation of the fuse unit, etch time and height difference increases. Thus, it is difficult to control the thickness (Rox) of the insulation layer remaining on the fuse.
- Currently, a fuse is formed using a metal line. Hereinafter, the fuse formed using the metal line is called as a metal fuse. The metal fuse is disposed higher than the fuse formed using the polysilicon plate electrode. Thus, an etch target decreases when the insulation layer for forming a fuse box is etched.
- However, since the metal fuse has a lower resistance than the polysilicon fuse, the thickness (Rox) of the metal fuse remaining on the metal fuse is less than that remaining on the fuse. That is, a range of the thickness (Rox) of the insulation layer remaining on the metal fuse is smaller than that remaining on using the polysilicon fuse. Thus, it is difficult to control the extent of etch during the formation of the fuse box and fabricate the semiconductor devices in mass.
- Furthermore, the metal line and the metal fuse formed using the metal line does not include one material like the polysilicon fuse. That is, the metal line and the metal fuse formed using the metal line may have a stack structure of TiN/Al/TiN. Thus, defect occurrence possibility increases when the fuse using the laser beam is cut out. This is because the barrier metal layer below the metal fuse often protrudes during a metal etch process and insufficient energy is supplied to this protruded portion during a subsequent fuse blowing process, which thus remains as a residue.
- Embodiments of the present invention are directed to providing a semiconductor with fuse and a method for fabricating the same.
- In the embodiments of the present invention, a fuse is formed using a polysilicon hard mask for a metal contact. A fuse including only polysilicon is formed over a layer with a metal line thereon. Thus, fuse formation and repair processes can be easily performed. Furthermore, by etching edges of the fuse or performing an ion implantation process, resistance of the edges of the fuse increases. As a result, energy is focused on a central portion of the fuse during a repair process to stably perform a fuse blowing process.
- In accordance with an aspect of the present invention, there is provided a method for fabricating a semiconductor with a fuse. The method includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask.
- In accordance with another aspect of the present invention, there is provided a semiconductor device with a fuse including a substrate employing an insulation layer thereon; a polysilicon fuse formed using a polysilicon hard mask for a metal contact over the insulation layer, an insulation layer covering the polysilicon fuse, and a fuse box for exposing a center portion of the polysilicon fuse while the insulation layer of the predetermined thickness remains on the polysilicon fuse.
- In accordance with still another aspect of the present invention, there is provided a method for fabricating a semiconductor device with a fuse. The method includes providing a substrate, forming an insulation layer over the substrate, forming a fuse over the insulation layer, forming a mask pattern for exposing the edges of the fuse other than a region for a fuse box over the fuse, and etching the edges of the fuse exposed by the mask pattern or performing an ion implantation process to increase a resistance of the edges of the fuse.
- In accordance with a further aspect of the present invention, there is provided a semiconductor device with a fuse including a substrate employing an insulation layer thereon, a fuse over the insulation layer, an insulation layer covering the fuse, and a fuse box disposed in the insulation layer and exposing a center portion of the fuse while having the insulation layer on the fuse to have a predetermined thickness.
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FIGS. 1A to 1I are cross-sectional views illustrating a method for fabricating a semiconductor device with a fuse in accordance with an embodiment of the present invention. - Embodiments of the present invention relate to a semiconductor with a fuse and a method for fabricating the same.
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FIGS. 1A to 1I are cross-sectional views illustrating a method for fabricating a semiconductor device with a fuse in accordance with an embodiment of the present invention. - Referring to
FIG. 1A , afirst insulation layer 11 is formed over a substrate (not shown) with a predetermined structure. The insulation layer preferably includes an oxide-based thin film. - A
polysilicon layer 12 for a hard mask is formed over thefirst insulation layer 11. Thepolysilicon layer 12 functions as an etch barrier in a subsequent first metal contact formation process. Thepolysilicon layer 12 is formed because the subsequent first metal contact is formed to penetrate theinsulation layer 11. Thefirst insulation layer 11 is formed to cover a capacitor (not shown) formed in a cell region and has a greater thickness. It is difficult to secure an etch margin during the etch process for forming the first metal contact penetrating thefirst insulation layer 11 only using a photoresist pattern. Therefore, a hard mask should be interposed below the photoresist pattern to perform the etch process. - In an embodiment of the present invention, the hard mask is the
polysilicon layer 12. Thepolysilicon layer 12 functions as an etch barrier during the formation of the first metal contact and forms a subsequent fuse. - A
first photoresist pattern 13 is formed over thepolysilicon layer 12 to form the first metal contact. - Referring to
FIG. 1B , thepolysilicon layer 12 is etched using thefirst photoresist pattern 13 as an etch barrier. Thus, apolysilicon pattern 12A is formed to expose a region for the first metal contact. Then, thefirst photoresist pattern 13 is removed and asecond photoresist pattern 14 is formed to cover a region for a fuse. - Referring to
FIG. 1C , the exposedfirst insulation layer 11 is etched using thepolysilicon pattern 12A as an etch barrier to form a contact hole. The contact hole exposes a predetermined portion of the substrate by penetrating through theinsulation layer 11. Herein, thepolysilicon pattern 12A can be damaged to a predetermined extent while a portion thereof below asecond photoresist pattern 14 is protected. - The
polysilicon pattern 12A is etched and then removed except a portion thereof below thesecond photoresist pattern 14. As a result, thepolysilicon pattern 12A remains only in a region for the fuse to form apolysilicon fuse 12B. - The
second photoresist pattern 14 is removed and aconductive layer 15 for a contact is formed over the resultant structure to sufficiently fill the contact hole. Theconductive layer 15 may include a barrier metal layer, e.g., a titanium (TiN) layer, and a tungsten layer. - Referring to
FIG. 1D , theconductive layer 15 is etch-backed until thefirst insulation 11 is exposed. Then, theconductive layer 15 in the contact hole forms afirst metal contact 15A. Theconductive layer 15 for a contact may remain on sidewalls of thepolysilicon fuse 12B in a spacer-shape. The remainingconductive layer 15 is called aconductive pattern 15B. Theconductive pattern 15B may be removed during an etch process for forming a subsequent metal line. - Referring to
FIG. 1E , ametal layer 16 is formed over a resultant structure including thefirst metal contact 15A, theconductive pattern 15B, and to form the metal line and thepolysilicon fuse 12B. Themetal layer 16 preferably includes Aluminum (Al) and is formed thinner than thepolysilicon fuse 12B. - Referring to
FIG. 1F , a planarization process, e.g. a chemical mechanical polishing (CMP), is performed to expose thepolysilicon fuse 12B and planarize themetal layer 16. After the planarization process, apolysilicon fuse pattern 12C and ametal pattern 16A having the same height is formed. Athird photoresist pattern 17 is formed over the planarized resultant structure to form the metal line. Thethird photoresist pattern 17 covers thepolysilicon fuse pattern 12C in order to protect thepolysilicon fuse 12C. As shown, edges of thepolysilicon fuse pattern 12C are exposed except a region that is not exposed to the laser beam, i.e., a region for a fuse box. Since the edges of thepolysilicon fuse pattern 12C is exposed, resistance of the edges of thepolysilicon fuse pattern 12C increases compared to a central portion during a subsequent etch or an ion implantation process. In this case, since energy of the laser beam irradiated during the subsequent repair process is focused on the central portion of thepolysilicon fuse pattern 12C, the fuse blowing can be stably performed. - Referring to
FIG. 1G , themetal pattern 16A is etched using thethird photoresist pattern 17 as an etch barrier to form afirst metal line 16B connected to thefirst metal contact 15A. When themetal pattern 16A is etched, a spacer-shaped remainingconductive pattern 15C on sidewalls of thepolysilicon fuse pattern 12C can be removed. Furthermore, the exposed edges of thepolysilicon fuse pattern 12C are etched to a predetermined depth. Thus, a remainingpolysilicon fuse pattern 12D is formed to have a protruded center portion. The center portion of the remainingpolysilicon fuse pattern 12D has a higher resistance than the edges thereof. - In the embodiments of the present invention, the edges of the
polysilicon fuse pattern 12C are etched. However, the edges of thepolysilicon fuse pattern 12C may not be etched according to a condition for the etch of themetal layer 16. In this case, ions are implanted into the exposedpolysilicon fuse pattern 12C etched using thethird photoresist pattern 17 as an etch barrier to increase the resistance of the edges of thepolysilicon fuse pattern 12C. The ion implantation process may be performed using oxygen (O2). - The ion implantation process can be additionally performed even though the edges of the
polysilicon fuse pattern 12C are etched. That is, the ions are selectively implanted into the edges of the remainingpolysilicon fuse pattern 12D. Thus, the resistance of the edges of the remainingpolysilicon fuse pattern 12D increases. - The remaining
first metal pattern 16B and the remainingpolysilicon fuse pattern 12D are formed over a single layer. Thus, an etch process for forming the subsequent fuse box can be easily performed. The remainingfirst metal pattern 16B and the remainingpolysilicon fuse pattern 12D both include only polysilicon even though they are formed over a single layer. Thus, a range of the thickness (Rox) of the insulation layer remaining on the fuse increases to easily perform the etch process for forming the fuse box and to stably perform the fuse blowing. - Referring to
FIG. 1H , asecond insulation layer 18 is formed to cover thefirst metal pattern 16B and the remainingpolysilicon fuse pattern 12D. Thesecond insulation layer 18 can employ a guard ring including asecond metal contact 19 and asecond metal line 20 therein. The guard ring surrounds the region for the fuse box formed by the aforementioned method. Although not shown, thesecond insulation layer 18 may further include a third metal contact and a third metal line can be additionally formed over thesecond metal line 20. Thesecond insulation layer 18 preferably includes an oxide layer. Apassivation layer 21 is formed over thesecond insulation layer 18. - Referring to
FIG. 11 , a mask (not shown) for forming the fuse box is formed over thepassivation layer 21. Thepassivation layer 21 and thesecond insulation layer 18 are etched using this mask as an etch barrier. The etch process is performed until thesecond insulation layer 18 having a desired thickness (Rox) remains on the center portion of the remainingpolysilicon fuse pattern 12D. Thus, afuse box 22 is formed. - Although not shown, a polyimide is formed over a resultant structure to protect a chip from external moisture and dust during the subsequent process, e.g., the packaging process. A lower surface of the
fuse box 22 is exposed to have one portion of the polyimide remain on sidewalls of thefuse box 22 by removing the other portion of the polyimide. Then, the fuse unit formation process is completed. - The polysilicon fuse according to the embodiments of the present invention is disposed on the layer with the metal line thereon. Thus, the etch process for forming the fuse box can be easily performed. Furthermore, since the fuse includes only polysilicon, the thickness of the insulation layer remaining on the fuse increases and the fuse blowing can be easily performed. Particularly, during the mask process for forming the metal line, the edges of the polysilicon fuse are exposed and then etched or ion implanted. Thus, the resistance of the edges of the fuse increases compared to the center portion to easily perform the fuse blowing.
- While the present invention has been described with respect to the specific embodiments, the above embodiments of the present invention are illustrative and not limitative. It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.
Claims (8)
1-10. (canceled)
11. A semiconductor device with a fuse, comprising,
a substrate employing an insulation layer thereon;
a polysilicon fuse formed of a polysilicon hard mask for a metal contact over the insulation layer;
an insulation layer covering the polysilicon fuse; and
a fuse box for exposing a center portion of the polysilicon fuse while the insulation layer of the predetermined thickness remains on the polysilicon fuse.
12. The semiconductor of claim 11 , further comprising a metal line disposed over a layer with the polysilicon fuse thereon.
13. The semiconductor of claim 11 , wherein edges of the polysilicon fuse not exposed by the fuse box is thinner than the center portion of the polysilicon fuse.
14. The semiconductor of claim 11 , wherein the edges of the polysilicon fuse not exposed by the fuse box has an ion implantation region with a higher resistance than the center portion of the polysilicon fuse exposed by the fuse box.
15-17. (canceled)
18. A semiconductor device with a fuse, comprising:
a substrate employing an insulation layer thereon;
a fuse over the insulation layer;
an insulation layer covering the fuse; and
a fuse box disposed in the insulation layer and exposing a center portion of the fuse while having the insulation layer on the fuse remain to a predetermined thickness.
19. The semiconductor device of claim 18 , wherein the fuse includes polysilicon.
Priority Applications (1)
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US13/040,808 US20110147886A1 (en) | 2007-12-27 | 2011-03-04 | Semiconductor device with fuse and method for fabricating the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020070138962A KR20090070826A (en) | 2007-12-27 | 2007-12-27 | Semiconductor device with fuse and method for manufacturing the same |
KR10-2007-0138962 | 2007-12-27 | ||
US12/163,383 US7923307B2 (en) | 2007-12-27 | 2008-06-27 | Semiconductor device with fuse and method for fabricating the same |
US13/040,808 US20110147886A1 (en) | 2007-12-27 | 2011-03-04 | Semiconductor device with fuse and method for fabricating the same |
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US12/163,383 Division US7923307B2 (en) | 2007-12-27 | 2008-06-27 | Semiconductor device with fuse and method for fabricating the same |
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US12/163,369 Abandoned US20090166802A1 (en) | 2007-12-27 | 2008-06-27 | Semiconductor device with fuse and method for fabricating the same |
US12/163,383 Active US7923307B2 (en) | 2007-12-27 | 2008-06-27 | Semiconductor device with fuse and method for fabricating the same |
US13/040,808 Abandoned US20110147886A1 (en) | 2007-12-27 | 2011-03-04 | Semiconductor device with fuse and method for fabricating the same |
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US12/163,369 Abandoned US20090166802A1 (en) | 2007-12-27 | 2008-06-27 | Semiconductor device with fuse and method for fabricating the same |
US12/163,383 Active US7923307B2 (en) | 2007-12-27 | 2008-06-27 | Semiconductor device with fuse and method for fabricating the same |
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KR (1) | KR20090070826A (en) |
Families Citing this family (2)
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US9059174B2 (en) * | 2008-11-05 | 2015-06-16 | Stmicroelectronics, Inc. | Method to reduce metal fuse thickness without extra mask |
CN117766511A (en) * | 2024-02-20 | 2024-03-26 | 芯联集成电路制造股份有限公司 | Fuse structure and preparation method thereof, semiconductor integrated circuit and preparation method thereof |
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2007
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- 2008-06-27 US US12/163,383 patent/US7923307B2/en active Active
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2011
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Also Published As
Publication number | Publication date |
---|---|
US20090166803A1 (en) | 2009-07-02 |
KR20090070826A (en) | 2009-07-01 |
US20090166802A1 (en) | 2009-07-02 |
US7923307B2 (en) | 2011-04-12 |
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