US20110269380A1 - Base layer, polishing pad including the same and polishing method - Google Patents

Base layer, polishing pad including the same and polishing method Download PDF

Info

Publication number
US20110269380A1
US20110269380A1 US12/806,489 US80648910A US2011269380A1 US 20110269380 A1 US20110269380 A1 US 20110269380A1 US 80648910 A US80648910 A US 80648910A US 2011269380 A1 US2011269380 A1 US 2011269380A1
Authority
US
United States
Prior art keywords
layer
porous
polishing
base layer
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/806,489
Inventor
Chao-Chin Wang
Chih-Cheng Chuang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IV Technologies Co Ltd
Original Assignee
IV Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IV Technologies Co Ltd filed Critical IV Technologies Co Ltd
Assigned to IV TECHNOLOGIES CO., LTD. reassignment IV TECHNOLOGIES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHUANG, CHIH-CHENG, WANG, CHAO-CHIN
Publication of US20110269380A1 publication Critical patent/US20110269380A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Definitions

  • the invention relates to a base layer, a polishing pad including the same, and a polishing method. More particularly, the invention relates to a base layer having better shear stress resistance with an adhesive layer, a polishing pad including the base layer, and a polishing method.
  • CMP chemical mechanical polishing
  • the chemical mechanical polishing process supplies slurry having a chemical on the polishing pad, applies a pressure on the substrate to be polished to press it on the polishing pad, and provides a relative motion between the substrate and the polishing pad. Through the mechanical friction generated by the relative motion and the chemical effects of the slurry, a portion of the surface layer of the substrate is removed to make the surface flat and smooth so as to achieve planarization.
  • polishing pads used in semiconductor wafers have multiple-layer structures, and each structure normally includes a polishing layer, an adhesive layer, and a base layer.
  • the polishing layer has a polishing surface capable of contacting the object to be polished directly.
  • the polishing layer can have microporous, grooves, and/or through holes formed thereon.
  • the base layer is adhered under the polishing layer and fixed on a polishing machine.
  • the base layer is a porous structure with numerous pores of various sizes. A ratio of a pore area occupying a total area is referred as a pore ratio.
  • the pore ratio is basically larger than 20% and can even reach 60% or more.
  • the adhesive layer mainly provides an adhesive force for adhering the polishing layer and the base layer tightly.
  • another adhesive layer is first used to adhere the other surface of the base layer (the surface not contacting the foregoing adhesive layer) on the platen of the polishing machine. Afterwards, the object (i.e. wafer or substrate) to be polished is polished utilizing the polishing pad.
  • the contact surface adhered to the adhesive layer also includes a plurality of pores.
  • these pores are deformed due to the shear force and therefore compress the air.
  • the compressed air consequently extrudes the adhesive layer originally adhered to the pores. Micro-protrusions are thus generated on the surface of the base layer contacting the adhesive layer.
  • the surface contacting the base layer and the adhesive layer gradually becomes uneven under the continuous shear force, which eventually leads to degraded polishing quality and erroneous fabrication.
  • the invention relates to a base layer having better shear stress resistance with the adhesive layer.
  • the invention relates to a polishing pad including a polishing layer and a base layer.
  • the base layer is disposed under the polishing layer and includes a porous inner layer and at least one surface layer.
  • the porous inner layer has an upper surface and a lower surface.
  • the surface layer can have few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores).
  • the surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer.
  • the invention also relates to a base layer adapted for underlying a polishing layer of a polishing pad.
  • the base layer includes a porous inner layer and a surface layer.
  • the porous inner layer has an upper surface and a lower surface.
  • the surface layer can have few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores).
  • the surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer.
  • the invention further relates to a polishing method adapted for polishing a substrate.
  • the polishing method includes the following steps.
  • a polishing pad is first provided.
  • a pressure is applied on the substrate to press the substrate on the polishing pad.
  • a relative motion is then provided between the substrate and the polishing pad.
  • the polishing pad includes a polishing layer and a base layer.
  • the base layer is disposed under the polishing layer and includes a porous inner layer and at least one surface layer.
  • the porous inner layer has an upper surface and a lower surface.
  • the surface layer can have few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores).
  • the surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer.
  • the surface layer in the base layer provided in the invention has the pore ratio no larger than 0.3% or is completely non-porous (i.e. does not have any pores)
  • a surface of the surface layer contacting the adhesive layer is also non-porous (i.e. does not have any pores). Consequently, the conventional uneven surface of the base layer contacting the adhesive layer caused by the porous structure of the base layer does not result.
  • the surface layer includes few pores (with the pore ratio no larger than 0.3%), the number of pores accumulated on the surface of the base layer contacting the adhesive layer is few.
  • the base layer disclosed in the invention is tightly adhered to the adhesive layer through the surface layer such that the base layer has better shear stress resistance with the adhesive layer.
  • the polishing pad disclosed in the invention since the base layer in the polishing pad has a surface layer with a pore ratio no larger than 0.3% or has a non-porous surface layer, the chance of the adhesive layer peeling off is therefore reduced.
  • FIG. 1 illustrates a cross-sectional view of a polishing pad according to a first embodiment of the invention.
  • FIG. 2 illustrates a cross-sectional view of a polishing pad according to a second embodiment of the invention.
  • FIG. 3 illustrates a cross-sectional view of a polishing pad according to a third embodiment of the invention.
  • FIG. 4 shows a scanning electron microscope (SEM) diagram of a base layer according to an embodiment of the invention.
  • FIG. 5 illustrates a flowchart of a polishing method according to an embodiment of the invention.
  • FIG. 1 illustrates a cross-sectional view of a polishing pad according to a first embodiment of the invention.
  • FIG. 2 illustrates a cross-sectional view of a polishing pad according to a second embodiment of the invention.
  • FIG. 3 illustrates a cross-sectional view of a polishing pad according to a third embodiment of the invention.
  • FIG. 4 shows a scanning electron microscope (SEM) diagram of a base layer according to an embodiment of the invention.
  • SEM scanning electron microscope
  • a polishing pad 100 disclosed in the invention includes a polishing layer 102 and a base layer 104 .
  • the polishing layer 102 is manufactured using a polymer material.
  • the polymer material includes, for example, polyurethane (PU).
  • the polishing layer 102 has a polishing surface capable of contacting an object (i.e. wafer or substrate) to be polished directly.
  • the polishing layer 102 can have microporous, grooves, and/or through holes formed thereon.
  • the base layer 104 is adapted for underlying the polishing layer 102 in the polishing pad 100 .
  • the base layer 104 is adhered under the polishing layer 102 and includes a porous inner layer 106 and at least one surface layer 108 .
  • the surface layer 108 is a non-porous structure, which has few pores or is completely non-porous (i.e. does not have any pores).
  • the surface layer 108 is also referred as the non-porous surface layer 108 .
  • the porous inner layer 106 and the non-porous surface layer 108 are manufactured by using the same material, for instance.
  • the porous inner layer 106 and the non-porous surface layer 108 have identical chemical structures.
  • the material is low density polyethylene or a mixture of low density polyethylene and ethylene vinyl acetate, for example.
  • the porous inner layer 106 and the non-porous surface layer 108 can concurrently be made from the same foaming process.
  • the porous inner layer 106 and the non-porous surface layer 108 can be formed simultaneously with the same material by controlling the foaming time and the foaming temperature.
  • the porous inner layer 106 and the non-porous surface layer 108 are manufactured as an integrative unit instead of being formed individually and then contacted (or adhered) with each other. Moreover, the porous inner layer 106 and the non-porous surface layer 108 do not have an obvious layering relationship. Specifically, although the porous inner layer 106 and the non-porous surface layer 108 are both referred as “layer” in the invention, from the SEM diagram shown in FIG. 4 , it is clear that these two layers ( 106 , 108 ) represent a self-formed double-layered structure which do not have a distinct joint line.
  • the porous inner layer 106 has an upper surface 110 and a lower surface 112 . Also, the porous inner layer 106 has a plurality of micro pores 114 with various sizes. The pore size distribution of the pores 114 ranges from 10 ⁇ m to 400 ⁇ m, for example. In one embodiment, the average pore size of the pores 114 ranges from 100 ⁇ m to 250 ⁇ m.
  • the non-porous surface layer 108 optionally has few pores or is completely non-porous (i.e. does not have any pores).
  • the pore ratio of the non-porous surface layer 108 is no larger than 0.3% (i.e. no larger than 0.2%; no larger than 0.1%; or can even be 0%). It should be noted that the pore ratio illustrated in the invention is defined as the ratio of the pore area occupying the total area of the non-porous surface layer 108 . The ratio not larger than 0.3% means the ratio is either smaller or equal to 0.3%.
  • the non-porous surface layer 108 still has a plurality of micro pores, the number of pores is reduced comparing to the porous structure of the conventional base layer (ex. having the pore ratio larger than 20%). Therefore, although the pores are still present, the few pores are not sufficient to accumulate on the surface of the non-porous surface layer 108 contacting the adhesive layer so as to compress air for generating micro-protrusions leading to uneven contact surface and, therefore, poor polishing quality.
  • the manufacturers are capable of determining the pore ratio of the non-porous surface layer 108 through the control of foaming time and foaming temperature.
  • the pore ratio of the non-porous surface layer 108 is 0%. That is, the non-porous surface layer 108 does not have any pores. Since the surface layer does not have any pores, pores do not accumulate on the surface of the non-porous surface layer 108 contacting the adhesive layer. As a result, the degradation in polishing quality caused by uneven contact surface does not occur.
  • the non-porous surface layer 108 is optionally disposed on at least one of the upper surface 110 and the lower surface 112 of the porous inner layer 106 .
  • the non-porous surface layer 108 is merely disposed on the upper surface 110 of the porous inner layer 106 , merely disposed on the lower surface 112 of the same, or disposed on the upper surface and lower surface ( 110 , 112 ) of the porous inner layer 106 simultaneously.
  • the manufacturers can adjust the method of fabrication to manufacture the non-porous surface layer 108 disposed on different locations or having different pore ratios.
  • the non-porous surface layer 108 is disposed on the upper surface 110 of the porous inner layer 106 . According to this disposition, the non-porous surface layer 108 is sandwiched between the porous inner layer 106 and the polishing layer 102 .
  • the non-porous surface layer 108 is disposed on the lower surface 112 of the porous inner layer 106 . According to this disposition, the non-porous surface layer 108 is sandwiched between the porous inner layer 106 and a platen 10 of the polishing machine.
  • the non-porous surface layer 108 is disposed on the upper surface 110 and the lower surface 112 of the porous inner layer 106 simultaneously. According to this disposition, the non-porous surface layer 108 disposed on the upper surface 110 is sandwiched between the porous inner layer 106 and the polishing layer 102 . On the other hand, the non-porous surface layer 108 disposed on the lower surface 112 is sandwiched between the porous inner layer 106 and the platen 10 of the polishing machine.
  • the non-porous surface layer 108 has a thickness larger than 5 ⁇ m, for example. In one embodiment, the thickness of the non-porous surface layer 108 ranges from 8 ⁇ m to 35 ⁇ m.
  • the thickness of the non-porous surface layer 108 can be manipulated through adjusting parameters in the fabrication of the base layer 104 . For instance, the thickness can be manipulated by adjusting the surface temperature of mold used in a batch production or by adjusting the surface temperature of rollers adopted in a continuous production. The surface temperatures of the mold or the rollers are exemplary lower than 30° C., 20° C., 10° C., or even lower than 5° C.
  • a base layer with a porous surface layer can be first manufactured. Thereafter, the porous surface layer is heated and pressurized for turning the surface layer into a non-porous surface layer.
  • the thickness of the non-porous surface layer is manipulated through the adjustment of temperature and pressure parameters.
  • the surface roughness of the non-porous surface layer 108 is smaller than, for instance, 15 ⁇ m.
  • the surface roughness of the non-porous surface layer 108 ranges from, for instance, 3 ⁇ m to 10 ⁇ m.
  • a surface treatment can be first applied to the non-porous surface layer 108 prior to the adhesion of the non-porous surface layer 108 and the adhesive layer for enhancing a surface adhesive force of the non-porous surface layer 108 .
  • the surface treatment is, for instance, a plasma treatment.
  • the polishing pad 100 further includes an adhesive layer 116 sandwiched between the polishing layer 102 and the base layer 104 for adhering the polishing layer 102 and the base layer 104 so as to form the polishing pad 100 .
  • the adhesive layer 116 is made of pressure sensitive adhesive (PSA), for instance.
  • the non-porous surface layer 108 when the non-porous surface layer 108 is disposed on the upper surface 110 of the porous inner layer 106 , since the non-porous surface layer 108 has few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores), the surface of the surface layer contacting the adhesive layer does not have any pores when the surface layer is non-porous. Consequently, the uneven surface of the base layer contacting the adhesive layer caused by the porous structure of the base layer does not result. When the surface layer has few pores (with the pore ratio no larger than 0.3%), the surface contacting the non-porous surface layer 108 (the base layer 104 ) and the adhesive layer 116 only has few pores.
  • the non-porous surface layer 108 (the base layer 104 ) is under the shear force during the polishing process, the chance of having the micro-protrusions formed on the surface of the base layer 104 contacting the adhesive layer 116 by the air compression of the deformed pores can be reduced, such that the base layer 104 can be tightly adhered to the adhesive layer 116 .
  • the polishing layer 102 and the base layer 104 remain well-adhered during the polishing process.
  • the non-porous surface layer 108 when the non-porous surface layer 108 is disposed on the lower surface 112 of the porous inner layer 106 , a surface of the non-porous surface layer 108 not contacted with the porous inner layer 106 then adheres to one surface of another adhesive layer 118 . Moreover, the other surface of the adhesive layer 118 is adhered to the platen 10 of the polishing machine. Similarly, as the non-porous surface layer 108 has few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores), the surface of the non-porous surface layer 108 (the base layer 104 ) contacting the adhesive layer 118 only has few pores or does not have any pores.
  • the non-porous surface layer 108 (the base layer 104 ) is under the shear force during the polishing process, the chance of having the micro-protrusions formed on the contact surface between the base layer 104 and the adhesive layer 118 by the air compression of the deformed pores can be reduced, such that the base layer 104 can be tightly adhered to the adhesive layer 118 .
  • the polishing pad 100 and the polishing machine remain well-adhered during the polishing process.
  • the contact surfaces of the non-porous surface layers 108 (the base layer 104 ) adhering to the adhesive layers ( 116 , 118 ) merely include few pores or are completely non-porous (i.e. does not have any pores).
  • the non-porous surface layers 108 (the base layer 104 ) are under the shear force during the polishing process, the chance of having the micro-protrusions formed on the surfaces of the base layer 104 contacting the adhesive layers 116 , 118 by the air compression of the deformed pores can be reduced, such that the base layer 104 can be tightly adhered to the adhesive layers 116 , 118 .
  • the polishing layer 102 and the base layer 104 remain well-adhered during the polishing process.
  • the polishing pad 100 and the polishing machine also remain well-adhered in the polishing process.
  • Shear stress resistance tests measuring the shear stress resistance maintenance time of the base layer using the ASTM D3652 standard test method.
  • Material of adhesive layer acrylic-based adhesive.
  • a base layer having a porous inner layer and a non-porous surface layer.
  • the base layer having the non-porous surface layer in Example 1 has a shear stress resistance maintenance time of 74 hours, which has an improvement range exceeding 400% comparing to a shear stress resistance maintenance time of 14 hours of the base layer having the porous surface layer in Comparative Example 1.
  • the shear stress resistance maintenance time is an important index for testing the performance of the polishing pad. Accordingly, the presence of the base layer having the non-porous surface layer is essential.
  • the base layer 104 and the adhesive layer ( 116 or 118 ) have a first maintenance time therebetween when a shear stress is applied to the non-porous surface layer 108 .
  • the base layer which has the same material and the same pore structure but does not include the non-porous surface layer; that is, when the same shear stress is applied to the base layer having the porous surface layer adhering to the same adhesive layer (i.e.
  • the base layer 104 and the adhesive layer have a second maintenance time therebetween.
  • the first maintenance time is at least 20% longer than the second maintenance time (for example, 50%, 100%, 200%, 300%, 400%, or 500% longer).
  • the base layer 104 is capable of adhering to the adhesive layer ( 116 or 118 ) tightly through the non-porous surface layer 108 , so that the base layer 104 and the adhesive layer have better shear stress resistance.
  • FIG. 5 illustrates a flowchart of a polishing method according to an embodiment of the invention.
  • FIG. 5 illustrates a flowchart of a polishing method according to an embodiment of the invention. This polishing method is adapted for polishing a substrate.
  • step S 100 is performed, where a polishing pad is provided.
  • the polishing pad is, for example, the polishing pad 100 shown in embodiments of FIGS. 1-3 .
  • the polishing pad includes a polishing layer and a base layer.
  • the base layer is adhered under the polishing layer and includes a porous inner layer and a surface layer (non-porous surface layer).
  • the porous inner layer has an upper surface and a lower surface.
  • the surface (non-porous surface layer) can have few pores (with the pore ratio no larger than 0.3%) or be completely non-porous (with the pore ratio equals to 0%).
  • the surface layer (the non-porous surface layer) is optionally adhered to the upper surface of the porous inner layer, to the lower surface of the porous inner layer, or to both the upper and the lower surfaces of the porous inner layer.
  • step S 102 is carried out, where a pressure is applied to the substrate to press the substrate on the foregoing polishing pad, so that the substrate and the polishing pad contact each other.
  • step S 104 is performed for providing a relative motion between the substrate and the polishing pad, so as to remove a portion of a substrate surface to achieve planarization.
  • the base layer disclosed in the invention has better shear stress resistance with the adhesive layer.
  • the polishing pad disclosed in the invention reduces the generation of micro-protrusions on the surface of the base layer contacting the adhesive layer.

Abstract

A polishing pad including a polishing layer and a base layer is provided. Disposed under the polishing layer, the base layer includes a porous inner layer and at least one surface layer. The porous inner layer has an upper surface and a lower surface. The surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer. The surface layer has a pore ratio no larger than 0.3%, or is completely non-porous.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application claims the priority benefit of Taiwan application serial no. 99114084, filed on May 3, 2010. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The invention relates to a base layer, a polishing pad including the same, and a polishing method. More particularly, the invention relates to a base layer having better shear stress resistance with an adhesive layer, a polishing pad including the base layer, and a polishing method.
  • 2. Description of Related Art
  • With the progress of the industry, planarization processes are often adopted for manufacturing various devices. A chemical mechanical polishing(CMP) process is often used in the planarization process in the industry. General speaking, the chemical mechanical polishing process supplies slurry having a chemical on the polishing pad, applies a pressure on the substrate to be polished to press it on the polishing pad, and provides a relative motion between the substrate and the polishing pad. Through the mechanical friction generated by the relative motion and the chemical effects of the slurry, a portion of the surface layer of the substrate is removed to make the surface flat and smooth so as to achieve planarization.
  • Conventional polishing pads used in semiconductor wafers have multiple-layer structures, and each structure normally includes a polishing layer, an adhesive layer, and a base layer. The polishing layer has a polishing surface capable of contacting the object to be polished directly. The polishing layer can have microporous, grooves, and/or through holes formed thereon. The base layer is adhered under the polishing layer and fixed on a polishing machine. The base layer is a porous structure with numerous pores of various sizes. A ratio of a pore area occupying a total area is referred as a pore ratio. The pore ratio is basically larger than 20% and can even reach 60% or more. The adhesive layer mainly provides an adhesive force for adhering the polishing layer and the base layer tightly.
  • In the polishing process, another adhesive layer is first used to adhere the other surface of the base layer (the surface not contacting the foregoing adhesive layer) on the platen of the polishing machine. Afterwards, the object (i.e. wafer or substrate) to be polished is polished utilizing the polishing pad.
  • Nevertheless, since the base layer is a porous structure with numerous pores of various sizes, the contact surface adhered to the adhesive layer also includes a plurality of pores. In the polishing process, these pores are deformed due to the shear force and therefore compress the air. The compressed air consequently extrudes the adhesive layer originally adhered to the pores. Micro-protrusions are thus generated on the surface of the base layer contacting the adhesive layer. With the increase of polishing time, the surface contacting the base layer and the adhesive layer gradually becomes uneven under the continuous shear force, which eventually leads to degraded polishing quality and erroneous fabrication.
  • SUMMARY OF THE INVENTION
  • Accordingly, the invention relates to a base layer having better shear stress resistance with the adhesive layer.
  • The invention relates to a polishing pad including a polishing layer and a base layer. The base layer is disposed under the polishing layer and includes a porous inner layer and at least one surface layer. The porous inner layer has an upper surface and a lower surface. The surface layer can have few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores). Moreover, the surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer.
  • The invention also relates to a base layer adapted for underlying a polishing layer of a polishing pad. The base layer includes a porous inner layer and a surface layer. The porous inner layer has an upper surface and a lower surface. The surface layer can have few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores). Moreover, the surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer.
  • The invention further relates to a polishing method adapted for polishing a substrate. The polishing method includes the following steps. A polishing pad is first provided. A pressure is applied on the substrate to press the substrate on the polishing pad. A relative motion is then provided between the substrate and the polishing pad. Herein, the polishing pad includes a polishing layer and a base layer. The base layer is disposed under the polishing layer and includes a porous inner layer and at least one surface layer. The porous inner layer has an upper surface and a lower surface. The surface layer can have few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores). The surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer.
  • In light of the foregoing, since the surface layer in the base layer provided in the invention has the pore ratio no larger than 0.3% or is completely non-porous (i.e. does not have any pores), when the surface layer is non-porous, a surface of the surface layer contacting the adhesive layer is also non-porous (i.e. does not have any pores). Consequently, the conventional uneven surface of the base layer contacting the adhesive layer caused by the porous structure of the base layer does not result. When the surface layer includes few pores (with the pore ratio no larger than 0.3%), the number of pores accumulated on the surface of the base layer contacting the adhesive layer is few. Although the pores are also deformed due to the shear force and therefore compress the air, since the few number of pores are not sufficient for compressing the air to extrude the adhesive layer originally adhered to the pores, the surface of the base layer contacting the adhesive layer does not become uneven and the polishing quality thereof is not affected. Therefore, the base layer disclosed in the invention is tightly adhered to the adhesive layer through the surface layer such that the base layer has better shear stress resistance with the adhesive layer. In addition, in the polishing pad disclosed in the invention, since the base layer in the polishing pad has a surface layer with a pore ratio no larger than 0.3% or has a non-porous surface layer, the chance of the adhesive layer peeling off is therefore reduced.
  • In order to make the aforementioned and other features and advantages of the invention more comprehensible, several embodiments accompanied with figures are described in detail below.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
  • FIG. 1 illustrates a cross-sectional view of a polishing pad according to a first embodiment of the invention.
  • FIG. 2 illustrates a cross-sectional view of a polishing pad according to a second embodiment of the invention.
  • FIG. 3 illustrates a cross-sectional view of a polishing pad according to a third embodiment of the invention.
  • FIG. 4 shows a scanning electron microscope (SEM) diagram of a base layer according to an embodiment of the invention.
  • FIG. 5 illustrates a flowchart of a polishing method according to an embodiment of the invention.
  • DESCRIPTION OF EMBODIMENTS
  • FIG. 1 illustrates a cross-sectional view of a polishing pad according to a first embodiment of the invention. FIG. 2 illustrates a cross-sectional view of a polishing pad according to a second embodiment of the invention. FIG. 3 illustrates a cross-sectional view of a polishing pad according to a third embodiment of the invention. FIG. 4 shows a scanning electron microscope (SEM) diagram of a base layer according to an embodiment of the invention.
  • Referring to FIGS. 1-3 simultaneously, a polishing pad 100 disclosed in the invention includes a polishing layer 102 and a base layer 104. Here, the polishing layer 102 is manufactured using a polymer material. The polymer material includes, for example, polyurethane (PU). The polishing layer 102 has a polishing surface capable of contacting an object (i.e. wafer or substrate) to be polished directly. Moreover, the polishing layer 102 can have microporous, grooves, and/or through holes formed thereon.
  • The base layer 104 is adapted for underlying the polishing layer 102 in the polishing pad 100. The base layer 104 is adhered under the polishing layer 102 and includes a porous inner layer 106 and at least one surface layer 108. Herein, the surface layer 108 is a non-porous structure, which has few pores or is completely non-porous (i.e. does not have any pores). Thus, the surface layer 108 is also referred as the non-porous surface layer 108.
  • The porous inner layer 106 and the non-porous surface layer 108 are manufactured by using the same material, for instance. The porous inner layer 106 and the non-porous surface layer 108 have identical chemical structures. The material is low density polyethylene or a mixture of low density polyethylene and ethylene vinyl acetate, for example. The porous inner layer 106 and the non-porous surface layer 108 can concurrently be made from the same foaming process. The porous inner layer 106 and the non-porous surface layer 108 can be formed simultaneously with the same material by controlling the foaming time and the foaming temperature. In other words, the porous inner layer 106 and the non-porous surface layer 108 are manufactured as an integrative unit instead of being formed individually and then contacted (or adhered) with each other. Moreover, the porous inner layer 106 and the non-porous surface layer 108 do not have an obvious layering relationship. Specifically, although the porous inner layer 106 and the non-porous surface layer 108 are both referred as “layer” in the invention, from the SEM diagram shown in FIG. 4, it is clear that these two layers (106, 108) represent a self-formed double-layered structure which do not have a distinct joint line.
  • The porous inner layer 106 has an upper surface 110 and a lower surface 112. Also, the porous inner layer 106 has a plurality of micro pores 114 with various sizes. The pore size distribution of the pores 114 ranges from 10 μm to 400 μm, for example. In one embodiment, the average pore size of the pores 114 ranges from 100 μm to 250 μm.
  • Herein, the non-porous surface layer 108 optionally has few pores or is completely non-porous (i.e. does not have any pores). In one embodiment, the pore ratio of the non-porous surface layer 108 is no larger than 0.3% (i.e. no larger than 0.2%; no larger than 0.1%; or can even be 0%). It should be noted that the pore ratio illustrated in the invention is defined as the ratio of the pore area occupying the total area of the non-porous surface layer 108. The ratio not larger than 0.3% means the ratio is either smaller or equal to 0.3%. In the present embodiment, although the non-porous surface layer 108 still has a plurality of micro pores, the number of pores is reduced comparing to the porous structure of the conventional base layer (ex. having the pore ratio larger than 20%). Therefore, although the pores are still present, the few pores are not sufficient to accumulate on the surface of the non-porous surface layer 108 contacting the adhesive layer so as to compress air for generating micro-protrusions leading to uneven contact surface and, therefore, poor polishing quality.
  • Obviously, the manufacturers are capable of determining the pore ratio of the non-porous surface layer 108 through the control of foaming time and foaming temperature. In one embodiment, the pore ratio of the non-porous surface layer 108 is 0%. That is, the non-porous surface layer 108 does not have any pores. Since the surface layer does not have any pores, pores do not accumulate on the surface of the non-porous surface layer 108 contacting the adhesive layer. As a result, the degradation in polishing quality caused by uneven contact surface does not occur.
  • At the same time, the non-porous surface layer 108 is optionally disposed on at least one of the upper surface 110 and the lower surface 112 of the porous inner layer 106. In details, the non-porous surface layer 108 is merely disposed on the upper surface 110 of the porous inner layer 106, merely disposed on the lower surface 112 of the same, or disposed on the upper surface and lower surface (110, 112) of the porous inner layer 106 simultaneously. Depending on product demands, the manufacturers can adjust the method of fabrication to manufacture the non-porous surface layer 108 disposed on different locations or having different pore ratios.
  • As shown in FIG. 1, the non-porous surface layer 108 is disposed on the upper surface 110 of the porous inner layer 106. According to this disposition, the non-porous surface layer 108 is sandwiched between the porous inner layer 106 and the polishing layer 102.
  • As shown in FIG. 2, the non-porous surface layer 108 is disposed on the lower surface 112 of the porous inner layer 106. According to this disposition, the non-porous surface layer 108 is sandwiched between the porous inner layer 106 and a platen 10 of the polishing machine.
  • As illustrated in FIG. 3, the non-porous surface layer 108 is disposed on the upper surface 110 and the lower surface 112 of the porous inner layer 106 simultaneously. According to this disposition, the non-porous surface layer 108 disposed on the upper surface 110 is sandwiched between the porous inner layer 106 and the polishing layer 102. On the other hand, the non-porous surface layer 108 disposed on the lower surface 112 is sandwiched between the porous inner layer 106 and the platen 10 of the polishing machine.
  • Here, the non-porous surface layer 108 has a thickness larger than 5 μm, for example. In one embodiment, the thickness of the non-porous surface layer 108 ranges from 8 μm to 35 μm. The thickness of the non-porous surface layer 108 can be manipulated through adjusting parameters in the fabrication of the base layer 104. For instance, the thickness can be manipulated by adjusting the surface temperature of mold used in a batch production or by adjusting the surface temperature of rollers adopted in a continuous production. The surface temperatures of the mold or the rollers are exemplary lower than 30° C., 20° C., 10° C., or even lower than 5° C. Generally, the lower the surface temperature of the mold or the rollers, the thicker the manufactured non-porous surface layer 108 is. In addition, a base layer with a porous surface layer can be first manufactured. Thereafter, the porous surface layer is heated and pressurized for turning the surface layer into a non-porous surface layer. Here, the thickness of the non-porous surface layer is manipulated through the adjustment of temperature and pressure parameters. Additionally, the surface roughness of the non-porous surface layer 108 is smaller than, for instance, 15 μm. For example, the surface roughness of the non-porous surface layer 108 ranges from, for instance, 3 μm to 10 μm. During the fabrication, a surface treatment can be first applied to the non-porous surface layer 108 prior to the adhesion of the non-porous surface layer 108 and the adhesive layer for enhancing a surface adhesive force of the non-porous surface layer 108. Here, the surface treatment is, for instance, a plasma treatment.
  • In addition, the polishing pad 100 further includes an adhesive layer 116 sandwiched between the polishing layer 102 and the base layer 104 for adhering the polishing layer 102 and the base layer 104 so as to form the polishing pad 100. The adhesive layer 116 is made of pressure sensitive adhesive (PSA), for instance.
  • As illustrated in FIG. 1, when the non-porous surface layer 108 is disposed on the upper surface 110 of the porous inner layer 106, since the non-porous surface layer 108 has few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores), the surface of the surface layer contacting the adhesive layer does not have any pores when the surface layer is non-porous. Consequently, the uneven surface of the base layer contacting the adhesive layer caused by the porous structure of the base layer does not result. When the surface layer has few pores (with the pore ratio no larger than 0.3%), the surface contacting the non-porous surface layer 108 (the base layer 104) and the adhesive layer 116 only has few pores. Therefore, when the non-porous surface layer 108 (the base layer 104) is under the shear force during the polishing process, the chance of having the micro-protrusions formed on the surface of the base layer 104 contacting the adhesive layer 116 by the air compression of the deformed pores can be reduced, such that the base layer 104 can be tightly adhered to the adhesive layer 116. As a result, the polishing layer 102 and the base layer 104 remain well-adhered during the polishing process.
  • As shown in FIG. 2, when the non-porous surface layer 108 is disposed on the lower surface 112 of the porous inner layer 106, a surface of the non-porous surface layer 108 not contacted with the porous inner layer 106 then adheres to one surface of another adhesive layer 118. Moreover, the other surface of the adhesive layer 118 is adhered to the platen 10 of the polishing machine. Similarly, as the non-porous surface layer 108 has few pores (with the pore ratio no larger than 0.3%) or is completely non-porous (i.e. does not have any pores), the surface of the non-porous surface layer 108 (the base layer 104) contacting the adhesive layer 118 only has few pores or does not have any pores. Therefore, when the non-porous surface layer 108 (the base layer 104) is under the shear force during the polishing process, the chance of having the micro-protrusions formed on the contact surface between the base layer 104 and the adhesive layer 118 by the air compression of the deformed pores can be reduced, such that the base layer 104 can be tightly adhered to the adhesive layer 118. As a result, the polishing pad 100 and the polishing machine remain well-adhered during the polishing process.
  • Referring to FIG. 3, when the upper surface 110 and the lower surface 112 of the porous inner layer 106 are simultaneously disposed with the non-porous surface layer 108, the contact surfaces of the non-porous surface layers 108 (the base layer 104) adhering to the adhesive layers (116, 118) merely include few pores or are completely non-porous (i.e. does not have any pores). Therefore, when the non-porous surface layers 108 (the base layer 104) are under the shear force during the polishing process, the chance of having the micro-protrusions formed on the surfaces of the base layer 104 contacting the adhesive layers 116, 118 by the air compression of the deformed pores can be reduced, such that the base layer 104 can be tightly adhered to the adhesive layers 116, 118. As a result, the polishing layer 102 and the base layer 104 remain well-adhered during the polishing process. The polishing pad 100 and the polishing machine also remain well-adhered in the polishing process.
  • In the invention, in order to show the effect of the polishing pad provided in the invention, a shear stress resistance experiment is implemented.
  • EXPERIMENTAL EXAMPLE
  • The features of the base layer in the polishing pad are illustrated with the following actual experiments. In the experiments, testing methods and sample settings are presented below.
  • Shear stress resistance tests: measuring the shear stress resistance maintenance time of the base layer using the ASTM D3652 standard test method.
  • Material of adhesive layer: acrylic-based adhesive.
  • Sample: polishing pad obtained by adhering the polishing layer and the base layer with the adhesive layer. The difference between Experiment 1 and Comparative Example 1 lies in the different base layers.
  • Example 1
  • A base layer having a porous inner layer and a non-porous surface layer.
  • Comparative Example 1
  • A base layer having the same material and the pore structure as the base layer in Example 1, but does not include the non-porous surface layer; that is, the surface layer is a porous base layer, for example, a base layer obtained by removing the non-porous surface layer from the base layer in Example 1.
  • In the following, the experimental results describing the adhesive features between the base layer and the adhesive layer are listed in Table 1 below.
  • TABLE 1
    Example 1 Comparative Example 1
    Shear stress resistance 74 14
    maintenance time (hr)
    Generation of micro- No Yes
    protrusions during
    actual polishing?
  • Referring to the experimental results of Example 1 and Comparative Example in Table 1, the base layer having the non-porous surface layer in Example 1 has a shear stress resistance maintenance time of 74 hours, which has an improvement range exceeding 400% comparing to a shear stress resistance maintenance time of 14 hours of the base layer having the porous surface layer in Comparative Example 1. In the polishing process, the polishing pad must not be peeled off under the shear stress effect during the long period of time. Thus, the shear stress resistance maintenance time is an important index for testing the performance of the polishing pad. Accordingly, the presence of the base layer having the non-porous surface layer is essential.
  • In the shear stress resistance maintenance time test, after the non-porous surface layer 108 of the base layer 104 and the adhesive layer (116 or 118) are adhered, the base layer 104 and the adhesive layer (116 or 118) have a first maintenance time therebetween when a shear stress is applied to the non-porous surface layer 108. When the same shear stress is applied to the base layer, which has the same material and the same pore structure but does not include the non-porous surface layer; that is, when the same shear stress is applied to the base layer having the porous surface layer adhering to the same adhesive layer (i.e. the same shear stress is applied to the porous inner layer 106 which has the non-porous surface layer 108 removed and is adhered to the same adhesive layer), the base layer 104 and the adhesive layer have a second maintenance time therebetween. The first maintenance time is at least 20% longer than the second maintenance time (for example, 50%, 100%, 200%, 300%, 400%, or 500% longer).
  • In light of the foregoing, since the non-porous surface layer 108 in the base layer 104 has only few pores or is completely non-porous (i.e. does not have any pores), the base layer 104 is capable of adhering to the adhesive layer (116 or 118) tightly through the non-porous surface layer 108, so that the base layer 104 and the adhesive layer have better shear stress resistance.
  • FIG. 5 illustrates a flowchart of a polishing method according to an embodiment of the invention. FIG. 5 illustrates a flowchart of a polishing method according to an embodiment of the invention. This polishing method is adapted for polishing a substrate.
  • Referring to FIG. 5, firstly, step S100 is performed, where a polishing pad is provided. The polishing pad is, for example, the polishing pad 100 shown in embodiments of FIGS. 1-3. The polishing pad includes a polishing layer and a base layer. The base layer is adhered under the polishing layer and includes a porous inner layer and a surface layer (non-porous surface layer). Herein, the porous inner layer has an upper surface and a lower surface. The surface (non-porous surface layer) can have few pores (with the pore ratio no larger than 0.3%) or be completely non-porous (with the pore ratio equals to 0%). The surface layer (the non-porous surface layer) is optionally adhered to the upper surface of the porous inner layer, to the lower surface of the porous inner layer, or to both the upper and the lower surfaces of the porous inner layer.
  • Next, step S102 is carried out, where a pressure is applied to the substrate to press the substrate on the foregoing polishing pad, so that the substrate and the polishing pad contact each other.
  • Thereafter, step S104 is performed for providing a relative motion between the substrate and the polishing pad, so as to remove a portion of a substrate surface to achieve planarization.
  • In summary, in one embodiment, the base layer disclosed in the invention has better shear stress resistance with the adhesive layer. In one embodiment, the polishing pad disclosed in the invention reduces the generation of micro-protrusions on the surface of the base layer contacting the adhesive layer.
  • Although the invention has been described with reference to the above embodiments, it will be apparent to one of the ordinary skill in the art that modifications to the described embodiment may be made without departing from the spirit of the invention. Accordingly, the scope of the invention will be defined by the attached claims not by the above detailed descriptions.

Claims (32)

1. A polishing pad, comprising:
a polishing layer; and
a base layer, disposed under the polishing layer, and comprising:
a porous inner layer having an upper surface and a lower surface; and
at least one surface layer having a pore ratio no larger than 0.3% and disposed on at least one of the upper surface and the lower surface of the porous inner layer.
2. The polishing pad as claimed in claim 1, wherein the surface layer is a non-porous surface layer and has a pore ratio of 0%.
3. The polishing pad as claimed in claim 2, wherein the porous inner layer and the non-porous surface layer are manufactured integrally using a same material.
4. The polishing pad as claimed in claim 2, wherein a thickness of the non-porous surface layer is larger than 5 μm.
5. The polishing pad as claimed in claim 4, wherein the thickness of the non-porous surface layer ranges from 8 μm to 35 μm.
6. The polishing pad as claimed in claim 2, wherein a surface roughness of the non-porous surface layer is smaller than 15 μm.
7. The polishing pad as claimed in claim 6, wherein the surface roughness of the non-porous surface layer ranges from 3 μm to 10 μm.
8. The polishing pad as claimed in claim 2, wherein a pore size distribution of pores in the porous inner layer ranges from 10 μm to 400 μm.
9. The polishing pad as claimed in claim 8, wherein an average pore size of the pores in the porous inner layer ranges from 100 μm to 250 μm.
10. The polishing pad as claimed in claim 1, wherein the base layer is manufactured using low density polyethylene or a mixture of low density polyethylene and ethylene vinyl acetate.
11. The polishing pad as claimed in claim 2 further comprising an adhesive layer at least disposed between the polishing layer and the base layer or between the base layer and a polishing machine.
12. The polishing pad as claimed in claim 11, wherein a shear stress resistance maintenance time test is performed after the base layer and the adhesive layer are adhered; when a shear stress is applied to the non-porous surface layer, the base layer and the adhesive layer have a first maintenance time therebetween; when the shear stress is applied to the porous inner layer, the base layer and the adhesive layer have a second maintenance time therebetween; the first maintenance time is at least 20% longer than the second maintenance time.
13. The polishing pad as claimed in claim 2, wherein the non-porous surface layer comprises a non-porous surface layer underwent a plasma treatment.
14. A base layer adapted for underlying a polishing layer of a polishing pad, the base layer comprising:
a porous inner layer having an upper surface and a lower surface; and
a surface layer having a pore ratio no larger than 0.3% and disposed on at least one of the upper surface and the lower surface of the porous inner layer.
15. The base layer as claimed in claim 14, wherein the surface layer is a non-porous surface layer and has a pore ratio of 0%.
16. The base layer as claimed in claim 15, wherein the porous inner layer and the non-porous surface layer are manufactured integrally using a same material.
17. The base layer as claimed in claim 15, wherein a thickness of the non-porous surface layer is larger than 5 μm.
18. The base layer as claimed in claim 17, wherein the thickness of the non-porous surface layer ranges from 8 μm to 35 μm.
19. The base layer as claimed in claim 15, wherein a surface roughness of the non-porous surface layer is smaller than 15 μm.
20. The base layer as claimed in claim 19, wherein the surface roughness of the non-porous surface layer ranges from 3 μm to 10 μm.
21. The base layer as claimed in claim 15, wherein a pore size distribution of pores in the porous inner layer ranges from 10 μm to 400 μm.
22. The base layer as claimed in claim 21, wherein an average pore size of the pores in the porous inner layer ranges from 100 μm to 250 μm.
23. The base layer as claimed in claim 14, wherein the base layer is manufactured using low density polyethylene or a mixture of low density polyethylene and ethylene vinyl acetate.
24. The base layer as claimed in claim 15, wherein the non-porous surface layer comprises a non-porous surface layer underwent a plasma treatment.
25. A polishing method adapted to polish a substrate, the method comprising:
providing a polishing pad;
applying a pressure on the substrate to press the substrate on the polishing pad; and
providing a relative motion between the substrate and the polishing pad, wherein the polishing pad comprises:
a polishing layer; and
a base layer, disposed under the polishing layer, and comprising:
a porous inner layer having an upper surface and a lower surface;
and
at least one surface layer having a pore ratio no larger than 0.3% and disposed on at least one of the upper surface and the lower surface of the porous inner layer.
26. The polishing method as claimed in claim 25, wherein the surface layer is a non-porous surface layer and has a pore ratio of 0%.
27. The polishing method as claimed in claim 26, wherein the porous inner layer and the non-porous surface layer are manufactured integrally using a same material.
28. The polishing method as claimed in claim 26, wherein a thickness of the non-porous surface layer is larger than 5 μm.
29. The polishing method as claimed in claim 26, wherein a surface roughness of the non-porous surface layer is smaller than 15 μm.
30. The polishing method as claimed in claim 26, wherein a pore size distribution of pores in the porous inner layer ranges from 10 μm to 400 μm.
31. The polishing method as claimed in claim 25, wherein the base layer is manufactured using low density polyethylene or a mixture of low density polyethylene and ethylene vinyl acetate.
32. The polishing method as claimed in claim 26, wherein the non-porous surface layer comprises a non-porous surface layer underwent a plasma treatment.
US12/806,489 2010-05-03 2010-08-13 Base layer, polishing pad including the same and polishing method Abandoned US20110269380A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW99114084 2010-05-03
TW099114084A TWI510328B (en) 2010-05-03 2010-05-03 Base layer, polishing pad including the same and polishing method

Publications (1)

Publication Number Publication Date
US20110269380A1 true US20110269380A1 (en) 2011-11-03

Family

ID=44858605

Family Applications (1)

Application Number Title Priority Date Filing Date
US12/806,489 Abandoned US20110269380A1 (en) 2010-05-03 2010-08-13 Base layer, polishing pad including the same and polishing method

Country Status (2)

Country Link
US (1) US20110269380A1 (en)
TW (1) TWI510328B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130295827A1 (en) * 2011-01-22 2013-11-07 Johannes Tack Grinding body
US20220023998A1 (en) * 2017-03-31 2022-01-27 Iv Technologies Co., Ltd. Polishing pad and polishing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI626117B (en) * 2017-01-19 2018-06-11 智勝科技股份有限公司 Polishing pad and polishing method

Citations (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504457A (en) * 1966-07-05 1970-04-07 Geoscience Instr Corp Polishing apparatus
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US6077153A (en) * 1996-11-29 2000-06-20 Sumitomo Metal Industries, Limited Polishing pad and apparatus for polishing a semiconductor wafer
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6390890B1 (en) * 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US20030077436A1 (en) * 2000-11-29 2003-04-24 Exigent, Inc. Method of altering and preserving the surface properties of a polishing pad and specific applications therefor
US6623337B2 (en) * 2000-06-30 2003-09-23 Rodel Holdings, Inc. Base-pad for a polishing pad
EP1345734A1 (en) * 2000-11-29 2003-09-24 Psiloquest, Inc. Crosslinked polyethylene polishing pad for chemical-mechnical polishing, polishing apparatus and polishing method
US6641471B1 (en) * 2000-09-19 2003-11-04 Rodel Holdings, Inc Polishing pad having an advantageous micro-texture and methods relating thereto
US6656018B1 (en) * 1999-04-13 2003-12-02 Freudenberg Nonwovens Limited Partnership Polishing pads useful in chemical mechanical polishing of substrates in the presence of a slurry containing abrasive particles
US20040055223A1 (en) * 2000-12-01 2004-03-25 Koichi Ono Polishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad
US20040102137A1 (en) * 2002-09-25 2004-05-27 Allison William C. Polishing pad for planarization
US6746311B1 (en) * 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
US20040137826A1 (en) * 2003-01-10 2004-07-15 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US20040137831A1 (en) * 2003-01-10 2004-07-15 3M Innovative Properties Company Pad constructions for chemical mechanical planarization applications
US20040146712A1 (en) * 2002-09-11 2004-07-29 Psiloquest, Inc. Polishing pad resistant to delamination
US20040171340A1 (en) * 2002-05-23 2004-09-02 Cabot Microelectronics Corporation Microporous polishing pads
US20040259484A1 (en) * 2003-06-17 2004-12-23 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20050095865A1 (en) * 2000-11-29 2005-05-05 Exigent, Inc. Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor
US20050153631A1 (en) * 2004-01-13 2005-07-14 Psiloquest System and method for monitoring quality control of chemical mechanical polishing pads
US20050176836A1 (en) * 2003-05-13 2005-08-11 Narasimharao Dontula Manufacturing process for open celled microcellular foam
US20050197050A1 (en) * 2003-06-17 2005-09-08 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20050260942A1 (en) * 2004-05-24 2005-11-24 Jsr Corporation Chemical mechanical polishing pad
US20050266226A1 (en) * 2000-11-29 2005-12-01 Psiloquest Chemical mechanical polishing pad and method for selective metal and barrier polishing
US20060148915A1 (en) * 2004-12-30 2006-07-06 Floyd Robert M Microporous materials and methods of making
US20060183412A1 (en) * 2001-12-20 2006-08-17 Allison William C Polishing pad
US20060280930A1 (en) * 2001-11-13 2006-12-14 Tetsuo Shimomura Polishing pad and method of producing the same
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
US20070059903A1 (en) * 2005-09-06 2007-03-15 Nitto Denko Corporation Pressure-sensitive adhesive sheet and method of processing articles
US7210980B2 (en) * 2005-08-26 2007-05-01 Applied Materials, Inc. Sealed polishing pad, system and methods
US20070141312A1 (en) * 2005-12-21 2007-06-21 James David B Multilayered polishing pads having improved defectivity and methods of manufacture
US20070178812A1 (en) * 2004-02-23 2007-08-02 Toyo Tire & Rubber Co., Ltd. Polishing pad and method for manufacture of semiconductor device using the same
US20070190905A1 (en) * 2004-03-11 2007-08-16 Tetsuo Shimomura Polishing pad and semiconductor device manufacturing method
US7291063B2 (en) * 2004-10-27 2007-11-06 Ppg Industries Ohio, Inc. Polyurethane urea polishing pad
US7381121B2 (en) * 2004-02-17 2008-06-03 Skc Co., Ltd. Base pad polishing pad and multi-layer pad comprising the same
US20080193728A1 (en) * 2002-07-26 2008-08-14 Nitto Denko Corporation Pressure-sensitive adhesive sheet, method for producing the same and method for using the same as well as a multi-layer sheet for use in the pressure-sensitive adhesive sheet and method for producing the same
US20080280037A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Multi-layer assembly, multi-layer stretch releasing pressure-sensitive adhesive assembly, and methods of making and using the same
US20080280086A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Multi-layer assembly, multi-layer stretch releasing pressure-sensitive adhesive assembly, and methods of making and using the same
US20090042480A1 (en) * 2006-02-06 2009-02-12 Toray Industries, Inc., A Corporation Of Japan Polishing pad and polishing apparatus
US20090075568A1 (en) * 2005-05-18 2009-03-19 Toyo Tire & Rubber Co., Ltd. Polishing pad, method of producing the same and method of producing semiconductor device by using the same
US20090093202A1 (en) * 2006-04-19 2009-04-09 Toyo Tire & Rubber Co., Ltd. Method for manufacturing polishing pad
US20090093200A1 (en) * 2007-10-03 2009-04-09 Fujibo Holdings Inc. Polishing pad
US20090137189A1 (en) * 2006-05-17 2009-05-28 Toyo Tire & Co., Ltd. Polishing pad
US20090170413A1 (en) * 2007-12-31 2009-07-02 Innopad, Inc. Chemical-mechanical planarization pad
US20090209185A1 (en) * 2008-02-18 2009-08-20 Jsr Corporation Chemical mechanical polishing pad
US20090253353A1 (en) * 2004-12-10 2009-10-08 Toyo Tire & Rubber Co., Ltd Polishing pad
US20100003896A1 (en) * 2006-08-28 2010-01-07 Toyo Tire & Rubber Co., Ltd. Polishing pad
US7654885B2 (en) * 2003-10-03 2010-02-02 Applied Materials, Inc. Multi-layer polishing pad
US20100029185A1 (en) * 2007-01-15 2010-02-04 Toyo Tire & Rubber Co., Ltd. Polishing pad and a method for manufacturing the same
US20100120343A1 (en) * 2007-03-20 2010-05-13 Kuraray Co., Ltd. Cushion for polishing pad and polishing pad using the cushion
US20100178853A1 (en) * 2009-01-12 2010-07-15 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
US20100210197A1 (en) * 2007-09-28 2010-08-19 Fujibo Holdings Inc. Polishing pad
US20100267318A1 (en) * 2003-10-03 2010-10-21 Alain Duboust Polishing pad with projecting portion
US20100330882A1 (en) * 2009-06-24 2010-12-30 Siltronic Ag Polishing Pad and Method For Polishing A Semiconductor Wafer
US20110076928A1 (en) * 2009-09-28 2011-03-31 James David B Dual-pore structure polishing pad
US7976952B2 (en) * 2005-02-23 2011-07-12 Nitto Denko Corporation Multilayer sheet, production method thereof and pressure-sensitive adhesive sheet using the multilayer sheet
US20110256817A1 (en) * 2008-12-26 2011-10-20 Toyo Tire & Rubber Co., Ltd. Polishing pad and method for producing same
US20110309541A1 (en) * 2010-06-16 2011-12-22 Allergan, Inc. Open-cell surface foam materials
US20120083187A1 (en) * 2009-06-18 2012-04-05 Jsr Corporation Polyurethane, composition for formation of polishing layers that contains same, pad for chemical mechanical polishing, and chemical mechanical polishing method using same
US8167690B2 (en) * 2006-09-08 2012-05-01 Toyo Tire & Rubber Co., Ltd. Polishing pad

Patent Citations (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504457A (en) * 1966-07-05 1970-04-07 Geoscience Instr Corp Polishing apparatus
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US6077153A (en) * 1996-11-29 2000-06-20 Sumitomo Metal Industries, Limited Polishing pad and apparatus for polishing a semiconductor wafer
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6390890B1 (en) * 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US6656018B1 (en) * 1999-04-13 2003-12-02 Freudenberg Nonwovens Limited Partnership Polishing pads useful in chemical mechanical polishing of substrates in the presence of a slurry containing abrasive particles
US6746311B1 (en) * 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
US6623337B2 (en) * 2000-06-30 2003-09-23 Rodel Holdings, Inc. Base-pad for a polishing pad
US6641471B1 (en) * 2000-09-19 2003-11-04 Rodel Holdings, Inc Polishing pad having an advantageous micro-texture and methods relating thereto
US20050095865A1 (en) * 2000-11-29 2005-05-05 Exigent, Inc. Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor
US20050266226A1 (en) * 2000-11-29 2005-12-01 Psiloquest Chemical mechanical polishing pad and method for selective metal and barrier polishing
US20030077436A1 (en) * 2000-11-29 2003-04-24 Exigent, Inc. Method of altering and preserving the surface properties of a polishing pad and specific applications therefor
EP1345734A1 (en) * 2000-11-29 2003-09-24 Psiloquest, Inc. Crosslinked polyethylene polishing pad for chemical-mechnical polishing, polishing apparatus and polishing method
US7192340B2 (en) * 2000-12-01 2007-03-20 Toyo Tire & Rubber Co., Ltd. Polishing pad, method of producing the same, and cushion layer for polishing pad
US7762870B2 (en) * 2000-12-01 2010-07-27 Toyo Tire & Rubber Co., Ltd Polishing pad and cushion layer for polishing pad
US7329170B2 (en) * 2000-12-01 2008-02-12 Toyo Tire & Rubber Co., Ltd. Method of producing polishing pad
US20040055223A1 (en) * 2000-12-01 2004-03-25 Koichi Ono Polishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad
US20060148391A1 (en) * 2000-12-01 2006-07-06 Koichi Ono Polishing pad and cushion layer for polishing pad
US7651761B2 (en) * 2001-11-13 2010-01-26 Toyo Tire & Rubber Co., Ltd. Grinding pad and method of producing the same
US7488236B2 (en) * 2001-11-13 2009-02-10 Toyo Tire & Rubber Co., Ltd. Polishing pad and method of producing the same
US20060280930A1 (en) * 2001-11-13 2006-12-14 Tetsuo Shimomura Polishing pad and method of producing the same
US20060183412A1 (en) * 2001-12-20 2006-08-17 Allison William C Polishing pad
US20040171340A1 (en) * 2002-05-23 2004-09-02 Cabot Microelectronics Corporation Microporous polishing pads
US20080193728A1 (en) * 2002-07-26 2008-08-14 Nitto Denko Corporation Pressure-sensitive adhesive sheet, method for producing the same and method for using the same as well as a multi-layer sheet for use in the pressure-sensitive adhesive sheet and method for producing the same
US20040146712A1 (en) * 2002-09-11 2004-07-29 Psiloquest, Inc. Polishing pad resistant to delamination
US6905402B2 (en) * 2002-09-25 2005-06-14 Ppg Industries Ohio, Inc. Polishing pad for planarization
US20040102137A1 (en) * 2002-09-25 2004-05-27 Allison William C. Polishing pad for planarization
US20040137826A1 (en) * 2003-01-10 2004-07-15 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US20040137831A1 (en) * 2003-01-10 2004-07-15 3M Innovative Properties Company Pad constructions for chemical mechanical planarization applications
US20050176836A1 (en) * 2003-05-13 2005-08-11 Narasimharao Dontula Manufacturing process for open celled microcellular foam
US7435161B2 (en) * 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20040259484A1 (en) * 2003-06-17 2004-12-23 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20050197050A1 (en) * 2003-06-17 2005-09-08 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
US7654885B2 (en) * 2003-10-03 2010-02-02 Applied Materials, Inc. Multi-layer polishing pad
US20100267318A1 (en) * 2003-10-03 2010-10-21 Alain Duboust Polishing pad with projecting portion
US20050153631A1 (en) * 2004-01-13 2005-07-14 Psiloquest System and method for monitoring quality control of chemical mechanical polishing pads
US7381121B2 (en) * 2004-02-17 2008-06-03 Skc Co., Ltd. Base pad polishing pad and multi-layer pad comprising the same
US20070178812A1 (en) * 2004-02-23 2007-08-02 Toyo Tire & Rubber Co., Ltd. Polishing pad and method for manufacture of semiconductor device using the same
US20070190905A1 (en) * 2004-03-11 2007-08-16 Tetsuo Shimomura Polishing pad and semiconductor device manufacturing method
US20050260942A1 (en) * 2004-05-24 2005-11-24 Jsr Corporation Chemical mechanical polishing pad
US7291063B2 (en) * 2004-10-27 2007-11-06 Ppg Industries Ohio, Inc. Polyurethane urea polishing pad
US20090253353A1 (en) * 2004-12-10 2009-10-08 Toyo Tire & Rubber Co., Ltd Polishing pad
US7871309B2 (en) * 2004-12-10 2011-01-18 Toyo Tire & Rubber Co., Ltd. Polishing pad
US20060148915A1 (en) * 2004-12-30 2006-07-06 Floyd Robert M Microporous materials and methods of making
US7976952B2 (en) * 2005-02-23 2011-07-12 Nitto Denko Corporation Multilayer sheet, production method thereof and pressure-sensitive adhesive sheet using the multilayer sheet
US20090075568A1 (en) * 2005-05-18 2009-03-19 Toyo Tire & Rubber Co., Ltd. Polishing pad, method of producing the same and method of producing semiconductor device by using the same
US7210980B2 (en) * 2005-08-26 2007-05-01 Applied Materials, Inc. Sealed polishing pad, system and methods
US20070059903A1 (en) * 2005-09-06 2007-03-15 Nitto Denko Corporation Pressure-sensitive adhesive sheet and method of processing articles
US20070141312A1 (en) * 2005-12-21 2007-06-21 James David B Multilayered polishing pads having improved defectivity and methods of manufacture
US20090042480A1 (en) * 2006-02-06 2009-02-12 Toray Industries, Inc., A Corporation Of Japan Polishing pad and polishing apparatus
US20090093202A1 (en) * 2006-04-19 2009-04-09 Toyo Tire & Rubber Co., Ltd. Method for manufacturing polishing pad
US20120108149A1 (en) * 2006-04-19 2012-05-03 Toyo Tire & Rubber Co., Ltd. Method for manufacturing polishing pad
US20090137189A1 (en) * 2006-05-17 2009-05-28 Toyo Tire & Co., Ltd. Polishing pad
US20100003896A1 (en) * 2006-08-28 2010-01-07 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8167690B2 (en) * 2006-09-08 2012-05-01 Toyo Tire & Rubber Co., Ltd. Polishing pad
US20100029185A1 (en) * 2007-01-15 2010-02-04 Toyo Tire & Rubber Co., Ltd. Polishing pad and a method for manufacturing the same
US20100120343A1 (en) * 2007-03-20 2010-05-13 Kuraray Co., Ltd. Cushion for polishing pad and polishing pad using the cushion
US20080280086A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Multi-layer assembly, multi-layer stretch releasing pressure-sensitive adhesive assembly, and methods of making and using the same
US20080280037A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Multi-layer assembly, multi-layer stretch releasing pressure-sensitive adhesive assembly, and methods of making and using the same
US20100210197A1 (en) * 2007-09-28 2010-08-19 Fujibo Holdings Inc. Polishing pad
US20090093200A1 (en) * 2007-10-03 2009-04-09 Fujibo Holdings Inc. Polishing pad
US20090170413A1 (en) * 2007-12-31 2009-07-02 Innopad, Inc. Chemical-mechanical planarization pad
US20090209185A1 (en) * 2008-02-18 2009-08-20 Jsr Corporation Chemical mechanical polishing pad
US20110256817A1 (en) * 2008-12-26 2011-10-20 Toyo Tire & Rubber Co., Ltd. Polishing pad and method for producing same
US20100178853A1 (en) * 2009-01-12 2010-07-15 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
US20120083187A1 (en) * 2009-06-18 2012-04-05 Jsr Corporation Polyurethane, composition for formation of polishing layers that contains same, pad for chemical mechanical polishing, and chemical mechanical polishing method using same
US20100330882A1 (en) * 2009-06-24 2010-12-30 Siltronic Ag Polishing Pad and Method For Polishing A Semiconductor Wafer
US20110076928A1 (en) * 2009-09-28 2011-03-31 James David B Dual-pore structure polishing pad
US20110309541A1 (en) * 2010-06-16 2011-12-22 Allergan, Inc. Open-cell surface foam materials

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
3M - CMP Pad Attachment Solutions using Double Coated Adhesive Transfer Tapes, 3/2008 *
Atlantic Gasket Corp - Volara Type EO skinned surfaces on both sides, 2014 *
M.R. Sanchis et al, "Surface Modification of low density density polyethylene (LDPE) film by low pressure O2 plasma treatment", 14 March 2006, European Polymer Journal, 42 (2006), 1558-1568 *
Sekisui Voltek - Volara Type EO Technical Data Sheet, 6/2003 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130295827A1 (en) * 2011-01-22 2013-11-07 Johannes Tack Grinding body
US20220023998A1 (en) * 2017-03-31 2022-01-27 Iv Technologies Co., Ltd. Polishing pad and polishing method

Also Published As

Publication number Publication date
TWI510328B (en) 2015-12-01
TW201139062A (en) 2011-11-16

Similar Documents

Publication Publication Date Title
JP5207909B2 (en) Carrier, method for coating carrier, and processing method for simultaneously removing material on both sides of semiconductor wafer
KR101627897B1 (en) Method for polishing a semiconductor wafer
US20170144266A1 (en) Polishing pad and method for manufacturing the same
US8430721B2 (en) Chemical-mechanical planarization pad
KR100394572B1 (en) multi characterized CMP pad structure and method for fabricating same
US11738421B2 (en) Method of making carrier head membrane with regions of different roughness
US20110269380A1 (en) Base layer, polishing pad including the same and polishing method
EP2676771A1 (en) Polishing pad
EP2732917A1 (en) Polishing pad
TWI288048B (en) A polishing pad and producing method thereof
US8574033B2 (en) Wafer support member, method for manufacturing the same and wafer polishing unit comprising the same
JP5222070B2 (en) Polishing pad
KR20150088248A (en) Device and method for bonding
CN113977453B (en) Chemical mechanical polishing pad for improving polishing flatness and application thereof
JP2010082703A (en) Cushion sheet for polishing pad
WO2018079105A1 (en) Wafer manufacturing method and wafer
KR102057833B1 (en) Membrane in carrier head for chemical mechanical polishing apparatus
KR20100079165A (en) Apparatus for chemical mechanical polishing, membrane and polishing head for chemical mechanical polishing
TWI556910B (en) Composite polishing pad and method for making the same
CN216967413U (en) Retainer ring and substrate grinding device comprising same
JP2004063880A (en) Wafer-bonding apparatus and wafer-bonding method
JP7276246B2 (en) Method for manufacturing carrier for double-side polishing machine and method for polishing both sides of wafer
US20240131655A1 (en) Chemical mechanical polishing device and polishing method
JP2012011516A (en) Polishing/holding pad
JP2017157710A (en) Manufacturing method of soi composite substrate, and polishing device for use in that method

Legal Events

Date Code Title Description
AS Assignment

Owner name: IV TECHNOLOGIES CO., LTD., TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WANG, CHAO-CHIN;CHUANG, CHIH-CHENG;REEL/FRAME:024895/0337

Effective date: 20100715

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION