US20110273597A1 - Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus - Google Patents

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus Download PDF

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US20110273597A1
US20110273597A1 US13/085,676 US201113085676A US2011273597A1 US 20110273597 A1 US20110273597 A1 US 20110273597A1 US 201113085676 A US201113085676 A US 201113085676A US 2011273597 A1 US2011273597 A1 US 2011273597A1
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photoelectric conversion
disposed
conversion portions
solid
imaging device
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US13/085,676
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Hiroaki Ishiwata
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Sony Corp
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Sony Corp
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Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ISHIWATA, HIROAKI
Publication of US20110273597A1 publication Critical patent/US20110273597A1/en
Priority to US14/495,318 priority Critical patent/US9438833B2/en
Priority to US15/156,564 priority patent/US9653499B2/en
Priority to US15/465,084 priority patent/US9923005B2/en
Priority to US15/894,542 priority patent/US10050073B2/en
Priority to US16/031,345 priority patent/US10177184B2/en
Priority to US16/204,194 priority patent/US10720458B2/en
Priority to US16/204,176 priority patent/US10355037B2/en
Priority to US16/779,068 priority patent/US10978506B2/en
Priority to US17/197,203 priority patent/US11671721B2/en
Abandoned legal-status Critical Current

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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Definitions

  • the invention relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus.
  • An electronic apparatus such as a digital camera includes a solid-state imaging device.
  • the solid-state imaging device includes a CMOS (Complementary Metal Oxide Semiconductor) type image sensor and a CCD (Charge Coupled Device) type image sensor.
  • CMOS Complementary Metal Oxide Semiconductor
  • CCD Charge Coupled Device
  • an imaging area where a plurality of unit pixels are arrayed in a matrix shape is disposed in a semiconductor substrate.
  • a photoelectric conversion portion is disposed in each of the unit pixels.
  • the photoelectric conversion portion is, for example, a photodiode and generates signal charges by receiving incident light incident through an externally attached optical system by a light-receiving plane and photoelectrically converting the light.
  • the unit pixel is configured so that a plurality of transistors are included in addition to the photoelectric conversion portion.
  • the plurality of the transistors are configured to read out the signal charges generated in the photoelectric conversion portion and to output an electrical signal to a signal line.
  • four transistors that is, a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor are disposed as the pixel transistors on the front surface of the semiconductor substrate.
  • wire lines of electrically connecting these transistors are provided in the front surface of the semiconductor substrate.
  • solid-state imaging device may be desired to have high sensitivity.
  • a digital camera used under lower luminance such as an endoscope camera and a monitoring camera, high sensitivity is necessary.
  • the high sensitivity is necessarily implemented by expanding an area of the light-receiving plane by increasing a pixel size.
  • one set of pixel transistors is shared by a plurality of photoelectric conversion portions, so that high sensitivity is implemented by increasing an area occupied by the light-receiving plane in the unit pixel.
  • one set of the pixel transistors is shared by two or four photoelectric conversion portions (for example, refer to Japanese Unexamined Patent Application Publication Nos. 2004-172950, 2006-157953, and 2006-54276).
  • FIG. 18 is a diagram illustrating an array of unit pixels P in a CMOS type image sensor.
  • FIG. 18 a portion where two unit pixels P in each of the horizontal direction x and the vertical direction y are aligned to be adjacent to each other is illustrated.
  • a photodiode 21 and a transfer transistor 22 are disposed in each of the four unit pixels P.
  • a transistor group constructed as a set of an amplification transistor 23 , a selection transistor 24 , and a reset transistor 25 is disposed under the four unit pixels P.
  • the four unit pixels P including the photodiode 21 and the transfer transistor 22 are configured so as to share the transistor group constructed as a set of the amplification transistor 23 , the selection transistor 24 , and the reset transistor 25 .
  • the two photodiodes 21 are aligned in the vertical direction y.
  • the transfer gates 22 G of the two transfer transistors 22 are disposed so as to be aligned in the vertical direction y between the two photodiodes 21 aligned in the vertical direction y.
  • the floating diffusion FD is disposed between the two transfer gates 22 G aligned in the vertical direction y.
  • sets constructed with the two photodiodes 21 , the two transfer gates 22 G, and the floating diffusion FD aligned in the vertical direction y are disposed so as to be aligned in the horizontal direction x.
  • the floating diffusions FD aligned in the horizontal direction x are electrically connected to each other, and the floating diffusions FD are connected to the gate of the amplification transistor 23 .
  • each unit pixel P the microlens ML and the color filter CF are disposed, so that the incident light incident sequentially through the microlens ML and the color filter CF is received by the photodiode 21 .
  • the color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB.
  • the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are adjacent to each other, and one thereof is disposed corresponding to each of the unit pixels P.
  • the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are disposed so as to be aligned in a Bayer array.
  • FIGS. 19A and 19B are conceptual diagrams illustrating a potential in the unit pixel P in the CMOS type image sensor.
  • FIGS. 19A and 19B the potentials in a portion taken along line XIX-XIX of FIG. 18 are illustrated.
  • the occurrence of the problem is suppressed by increasing the electric field gradient in the photodiode 21 so that the signal charges are moved to the side of the transfer transistor 22 .
  • an ion injection process is added, so that the photodiode 21 is formed as illustrated in the above-described potential diagram.
  • FIGS. 20 and 21 are diagrams illustrating behaviors of incident light incident on the unit pixel P of the CMOS type image sensor.
  • FIG. 20 illustrates a behavior in the case where the main light beams H 21 are incident on upper pixels PU disposed in the upper end portion in the imaging area where a plurality of the unit pixels P are arrayed.
  • FIG. 21 illustrates a behavior in the case where the main light beams H 22 are incident on lower pixels PL disposed in the lower end portion in the imaging area where a plurality of the unit pixels P are arrayed.
  • the photodiode 21 and the floating diffusion FD are disposed in an upper layer portion of the semiconductor substrate 101 .
  • the transfer gate 22 G constituting the transfer transistor 22 is disposed through a gate insulating film (not shown) on the surface of the semiconductor substrate 101 , on which the main light beams H 21 and H 22 are incident.
  • the transfer gate 22 G is formed with, for example, a conductive light-blocking material such as polysilicon.
  • the main light beams H 21 and H 22 are not incident in the direction z perpendicular to the surface of the semiconductor substrate 101 but they are incident in the direction slanted with respect to the direction z (refer to FIGS. 1 and 2 and refer to FIG. 3 or the like in Japanese Patent No. 2600250).
  • the main light beams H 21 and H 22 are incident through color filters, the main light beams H 21 and H 22 are incident on the photodiode 21 as colored light such as red light or green light.
  • a small-sized electronic apparatus such as a capsule endoscope a portable camera
  • the considerable color shading occurs, so that the image quality of the color image is deteriorated.
  • the volume for mounting an externally-attached lens module is necessarily reduced, and thus, the maximum main light beam angle of the lens is configured to be large for the small thickness of the apparatus, so that the considerable color shading occurs.
  • a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
  • the unit pixel is configured so that the floating diffusions are interposed by the plurality of the photoelectric conversion portions and so that the plurality of the transfer gates are disposed between the plurality of the photoelectric conversion portions and the floating diffusions.
  • a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area; the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in the first direction; and the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the first direction.
  • a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area; the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in a direction slanted with respect to the first direction and the second direction; and the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the direction slanted with respect to the first direction and the second direction.
  • the plurality of the photoelectric conversion portions are arrayed in the unit pixel so that the same number of the photoelectric conversion portions are aligned in each of the first direction and second direction.
  • the plurality of the photoelectric conversion portions are arrayed so that an even number of the photoelectric conversion portions are aligned in each of the first direction and the second direction.
  • the plurality of the photoelectric conversion portions are arrayed so that multiples of the four photoelectric conversion portions are aligned in each of the first direction and the second direction.
  • the unit pixel includes: an amplification transistor of which the gate is electrically connected to the floating diffusion; and a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion, wherein a plurality of the amplification transistors are disposed in the unit pixel, wherein a plurality of the vertical signal lines are disposed, and the plurality of the vertical signal lines are electrically connected to each other, and wherein the signal output from the plurality of the vertical signal lines are smoothed.
  • the unit pixel includes: an amplification transistor of which the gate is electrically connected to the floating diffusion; and a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion, wherein a plurality of the amplification transistors are disposed in the unit pixel, and the sources of the plurality of the amplification transistors are electrically connected to a common vertical signal line.
  • the unit pixel includes a microlens which focuses light on the photoelectric conversion portion, and a plurality of the microlenses are disposed corresponding to the plurality of the photoelectric conversion portions.
  • the unit pixel includes an optical waveguide which guides light to the photoelectric conversion portion, and a plurality of the optical waveguides are disposed corresponding to the plurality of the photoelectric conversion portions.
  • a method of manufacturing a solid-state imaging device including the step of forming the solid-state imaging device by disposing a plurality of unit pixels in an imaging area which captures a color image, wherein the step of forming the unit pixel includes the steps of: forming a plurality of photoelectric conversion portions which receive light of the same color to generate signal charges; disposing a plurality of transfer gates, which transfer the signal charges from the photoelectric conversion portions, in the plurality of the photoelectric conversion portions; and forming a floating diffusion to which signal charges from the plurality of the photoelectric conversion portions are transferred through the plurality of the transfer gates to be added.
  • an electronic apparatus having a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
  • a plurality of unit pixels are disposed so as to capture a color image by an imaging area.
  • a plurality of photoelectric conversion portions are included in the unit pixel.
  • a plurality of transfer gates which transfer signal charges from each of the photoelectric conversion portions are included in the unit pixel.
  • a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates is included in the unit pixel.
  • the plurality of the photoelectric conversion portions are formed so as to receive light of the same color and to generate the signal charges.
  • the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
  • a solid-state imaging device capable of improving an image quality of a captured image
  • a method of manufacturing the solid-state imaging device and an electronic apparatus.
  • FIG. 1 is a configurational diagram illustrating a configuration of a camera according to a first embodiment of the invention.
  • FIG. 2 is a diagram illustrating a whole configuration of a solid-state imaging device according to the first embodiment of the invention.
  • FIG. 3 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 4 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 5 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 6 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 7 is a conceptual diagram illustrating a potential in a unit pixel according to the first embodiment of the invention.
  • FIGS. 8A to 8C are timing charts illustrating pulse signals supplied to portions of the unit pixel when a signal is read out from the unit pixel according to the first embodiment of the invention.
  • FIG. 9 is a diagram illustrating main components formed in processes of a method of manufacturing the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 10 is a diagram illustrating main components formed in processes of a method of manufacturing the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 11 is a diagram illustrating a behavior of incident light incident on the unit pixel according to the first embodiment of the invention.
  • FIG. 12 is a diagram illustrating a behavior of incident light incident on the unit pixel according to the first embodiment of the invention.
  • FIG. 13 is a diagram illustrating main components of a solid-state imaging device according to a second embodiment of the invention.
  • FIG. 14 is a diagram illustrating main components of a solid-state imaging device according to a third embodiment of the invention.
  • FIG. 15 is a diagram illustrating main components of the solid-state imaging device according to the third embodiment of the invention.
  • FIG. 16 is a diagram illustrating main components of the solid-state imaging device according to the third embodiment of the invention.
  • FIG. 17 is a diagram illustrating main components of a solid-state imaging device according to a fourth embodiment of the invention.
  • FIG. 18 is a diagram illustrating an array of unit pixels in a CMOS type image sensor.
  • FIGS. 19A and 19B are conceptual diagrams illustrating a potential in the unit pixel in the CMOS type image sensor.
  • FIG. 20 is a diagram illustrating a behavior of incident light incident on the unit pixel of the CMOS type image sensor.
  • FIG. 21 is a diagram illustrating a behavior of incident light incident on the unit pixel of the CMOS type image sensor.
  • FIG. 1 is a configurational diagram illustrating a configuration of a camera 40 according to a first embodiment of the invention.
  • the camera 40 is an electronic apparatus and includes a solid-state imaging device 1 , an optical system 42 , a controller 43 , and a signal processing circuit 44 .
  • the solid-state imaging device 1 generates signal charges by receiving incident light H incident as a subject image through the optical system 42 by an imaging plane PS and photoelectrically converting the light. In addition, the solid-state imaging device 1 is driven based on a control signal output from the controller 43 to read out the signal charges and output raw data.
  • main light beams H 1 emitted from the optical system 42 are incident on the central portion of the imaging plane PS at an angle perpendicular to the imaging plane PS.
  • main light beams H 21 and H 22 are incident on the peripheral portion of the imaging plane PS at an angle slanted with respect to the direction perpendicular to the imaging plane PS of the solid-state imaging device 1 .
  • the main light beams H 21 and H 22 are slantingly incident on the imaging plane PS from the center of the imaging plane PS toward the periphery thereof.
  • the optical system 42 includes optical elements such as a focusing lens or an aperture.
  • the optical system 42 is disposed so that incident light according to a subject image is focused on the imaging plane PS of the solid-state imaging device 1 .
  • the optical system 42 is installed so that the optical axis corresponds to the center of the imaging plane PS of the solid-state imaging device 1 . Therefore, as illustrated in FIG. 1 , the optical system 42 emits the main light beams H 1 to the central portion of the imaging plane PS of the solid-state imaging device 1 at the angle perpendicular to the imaging plane PS. On the other hand, the optical system 42 emits the main light beams H 21 and H 22 to the peripheral portion of the imaging plane PS at an angle slanted with respect to the direction perpendicular to the imaging plane PS. This is caused by finiteness of an exit pupil distance formed by an aperture or the like.
  • the controller 43 outputs various control signals to the solid-state imaging device 1 and the signal processing circuit 44 to control and drive the solid-state imaging device 1 and the signal processing circuit 44 .
  • the signal processing circuit 44 is configured to generate a digital image with respect to the subject image by performing a signal process on raw data output from the solid-state imaging device 1 .
  • FIG. 2 is a diagram illustrating a whole configuration of the solid-state imaging device 1 according to the first embodiment of the invention. In FIG. 2 , an upper surface is illustrated.
  • the solid-state imaging device 1 is a CMOS type image sensor and includes a semiconductor substrate 101 as illustrated in FIG. 2 .
  • the semiconductor substrate 101 is, for example, a semiconductor substrate made of silicon and, as illustrated in FIG. 2 , an imaging area PA and a peripheral area SA are disposed in a surface of the semiconductor substrate 101 .
  • the imaging area PA has a quadrangular shape, in which a plurality of the unit pixels P are disposed in each of the horizontal direction x and the vertical direction y. In other words, the unit pixels P are aligned in a matrix shape.
  • the imaging area PA is disposed so that the center thereof corresponds to the optical axis of the optical system 42 illustrated in FIG. 1 .
  • the imaging area PA corresponds to the imaging plane PS illustrated in FIG. 1 . Therefore, as described above, in the unit pixel P disposed at the central portion of the imaging area PA, the main light beams (H 1 of FIG. 1 ) are incident at an angle perpendicular to the plane of the imaging area PA. On the other hand, in the unit pixel P (for example, the upper pixel PU or the lower pixel PL) disposed in the peripheral portion of the imaging area PA, the main light beam (H 21 or H 22 of FIG. 1 ) is incident at an angle slanted with respect to the direction perpendicular to the plane of the imaging area PA.
  • the peripheral area SA is located in the periphery of the imaging area PA.
  • peripheral circuits are disposed in the peripheral area SA.
  • a vertical driving circuit 13 a column circuit 14 , a horizontal driving circuit 15 , an external output circuit 17 , and a timing generator (TG) 18 are disposed as the peripheral circuits.
  • the vertical driving circuit 13 is configured to be disposed at a side portion of the imaging area PA in the peripheral area SA so as to select and drive the unit pixels P of the imaging area PA in units of a row of the unit pixels P.
  • the column circuit 14 is configured to be disposed in the lower end portion of the imaging area PA in the peripheral area SA so as to perform a signal process on the signal output from the unit pixels P in units of a column of the unit pixels P.
  • the column circuit 14 includes a CDS (Correlated Double Sampling) circuit (not shown) to perform a signal process of removing fixed pattern noise.
  • CDS Correlated Double Sampling
  • the horizontal driving circuit 15 is electrically connected to the column circuit 14 .
  • the horizontal driving circuit 15 includes, for example, shift registers to sequentially output signals stored in units of a column of the unit pixels P in the column circuit 14 to the external output circuit 17 .
  • the external output circuit 17 is electrically connected to the column circuit 14 .
  • the external output circuit 17 performs a signal process on the signal output from the column circuit 14 and outputs the processed signal to an external portion.
  • the external output circuit 17 includes an AGC (Automatic Gain Control) circuit 17 a and an ADC circuit 17 b.
  • the AGC circuit 17 a applies a gain to a signal
  • the ADC circuit 17 b converts an analog signal to a digital signal to output the digital signal to an external portion.
  • the timing generator 18 is electrically connected to the vertical driving circuit 13 , the column circuit 14 , the horizontal driving circuit 15 , and the external output circuit 17 .
  • the timing generator 18 generates various timing signals and outputs the timing signals to the vertical driving circuit 13 , the column circuit 14 , the horizontal driving circuit 15 , and the external output circuit 17 to perform driving controls of the portions.
  • FIGS. 3 to 6 are diagrams illustrating main components of the solid-state imaging device 1 according to the first embodiment of the invention.
  • FIG. 3 illustrates an upper surface of an imaging area PA where a plurality of the unit pixels P are arrayed in the solid-state imaging device 1 .
  • a portion where two unit pixels P in each of the horizontal direction x and the vertical direction y are aligned to be adjacent to each other is exemplarily illustrated.
  • FIG. 4 illustrates an upper surface of one unit pixel P.
  • the upper surface of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 3 is disposed is exemplarily illustrated.
  • the unit pixel P (green pixel) where the green filter layer CFG is disposed and the unit pixel P (blue pixel) where the blue filter layer CFB is disposed also have the same configuration as the unit pixel P (red pixel) where the red filter layer CFR is disposed.
  • FIG. 5 illustrates a circuit configuration of one unit pixel P.
  • a circuit configuration of the unit pixel P red pixel
  • the green pixel and the blue pixel also have the same configuration as the red pixel.
  • FIG. 6 illustrates a cross section of one unit pixel P.
  • a cross section of a portion taken along line VI-VI of FIG. 4 is illustrated.
  • a plurality of the unit pixels P are disposed in each of the horizontal direction x and the vertical direction y.
  • each color filter CF is disposed in each of the unit pixels P.
  • the color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB.
  • the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are adjacent to each other, and one thereof is disposed corresponding to each of the unit pixels P.
  • the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are disposed to be aligned in a Bayer array.
  • a plurality of the green filter layers CFG are disposed to be aligned in the diagonal direction so as to be in a checkered shape.
  • the red filter layers CFR and the blue filter layers CFB are disposed to be aligned in the diagonal direction of the plurality of the green filter layers CFG.
  • a light blocking portion (not shown) is disposed in the periphery of each of the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB so as to partition the unit pixel P.
  • each unit pixel P includes a plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the unit pixel P is configured to include four imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • a plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 are arrayed on the imaging plane (xy plane).
  • the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 are aligned on the imaging plane (xy plane) in the horizontal direction x and the vertical direction y perpendicular to the horizontal direction x.
  • a photodiode 21 and a transfer transistor 22 are disposed in each of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • a transistor group constructed as a set of an amplification transistor 23 , a selection transistor 24 , and a reset transistor 25 is disposed under the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the unit pixel P is constructed so that the four imaging portions PA 1 , PA 2 , PB 1 , and PB 2 , each of which includes the photodiode 21 and the transfer transistor 22 , share the set of the amplification transistor 23 , the selection transistor 24 , and the reset transistor 25 .
  • the two photodiodes 21 are disposed so as to be aligned in the vertical direction y in each of the imaging portions PA 1 and PA 2 .
  • the transfer gates 22 G of the two transfer transistors 22 are disposed so as to be aligned in the vertical direction y in each of the imaging portions PA 1 and PA 2 .
  • the floating diffusion FD is disposed between the two transfer gates 22 G aligned in the vertical direction y.
  • the two imaging portions PB 1 and PB 2 aligned in the vertical direction y are disposed in the same configuration as that of the two imaging portions PA 1 and PA 2 .
  • sets constructed with the two photodiodes 21 , the two transfer gates 22 G, and the floating diffusion FD aligned in the vertical direction y are disposed so as to be aligned in the horizontal direction x.
  • the floating diffusions FD aligned in the horizontal direction x are electrically connected to each other through a wire line Hab, and the floating diffusions FD are connected to the gate of the amplification transistor 23 .
  • a microlens ML is disposed in the unit pixel P.
  • the wire-line layer 111 and the color filter CF are disposed between the microlens ML and the photodiode 21 , so that the incident light H incident sequentially through these components is received by the photodiode 21 .
  • the transfer transistor 22 transfers the signal charges generated by the photodiode 21 to the floating diffusions FD to output an electrical signal through the amplification transistor 23 or the like to the vertical signal line 27 .
  • a plurality of the photodiodes 21 are disposed on the imaging plane (xy plane).
  • the even number of the photodiodes 21 are disposed to be aligned in each of the horizontal direction x and the vertical direction y to correspond to the array of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the photodiode 21 is disposed in each of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 , of which the size is in a range of from 1 to 2 ⁇ m.
  • the photodiodes 21 are disposed so that the two photodiodes 21 are aligned in an equal interval in each of the horizontal direction x and the vertical direction y.
  • the photodiodes 21 are disposed in the semiconductor substrate 101 .
  • the photodiode 21 is configured so as to generate and accumulate the signal charges by receiving the incident light H incident as a subject image with the light-receiving plane JS and photoelectrically converting the incident light H.
  • the photodiode 21 is configured so that an n-type charge accumulation area (not shown) is formed in a p well (not shown) disposed in the semiconductor substrate 101 which is an n-type silicon semiconductor.
  • a p-type accumulation layer (not shown) is configured to be included on the front surface of the semiconductor substrate 101 .
  • the photodiode 21 is formed in a so-called HAD (Hall Accumulated Diode) structure.
  • each of the photodiodes 21 is configured so that the accumulated signal charges are transferred to the floating diffusion FD by the transfer transistor 22 .
  • the unit pixel P includes the four photodiodes 21 , and the four transfer transistors 22 corresponding to the four photodiodes 21 are disposed in pairs.
  • the transfer transistor 22 is disposed between the two photodiodes 21 aligned in the vertical direction y.
  • the floating diffusion FD is disposed between the two transfer transistors 22 disposed between the two photodiodes 21 aligned in the vertical direction y.
  • the four photodiodes 21 are configured so as to share a set of an amplification transistor 23 , a selection transistor 24 , and a reset transistor 25 .
  • one amplification transistor 23 , one selection transistor 24 , and one reset transistor 25 are disposed.
  • a transfer transistor 22 In the unit pixel P, a transfer transistor 22 , an amplification transistor 23 , a selection transistor 24 , and a reset transistor 25 are disposed on the imaging plane (xy plane).
  • the transfer transistor 22 , the amplification transistor 23 , the selection transistor 24 , and the reset transistor 25 are configured so that signal charges generated in the photodiode 21 are read out to be output as a data signal.
  • Each of the transfer transistor 22 , the amplification transistor 23 , the selection transistor 24 , and the reset transistor 25 is configured with, for example, an N-channel MOS transistor.
  • a plurality of the transfer transistors 22 are disposed in each of the horizontal direction x and the vertical direction y so as to correspond to a plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the transfer transistors 22 are disposed so that the two transfer transistors 22 interpose the floating diffusion FD disposed between the plurality of the photodiodes 21 aligned in the vertical direction y on the imaging plane (xy plane).
  • each transfer transistor 22 includes a transfer gate 22 G, and the transfer gate 22 G is disposed to extend in the horizontal direction x.
  • the transfer gate 22 G is disposed between the photodiodes 21 aligned in the vertical direction y in the unit pixel P.
  • the transfer gates 22 G are disposed on the front surface of the semiconductor substrate 101 .
  • a gate insulating film (not shown) is interposed between the transfer gate 22 G and the front surface of the semiconductor substrate 101 .
  • the transfer gates 22 G are disposed to be adjacent to the floating diffusions FD disposed on the surface layer of the semiconductor substrate 101 so that the two transfer gates 22 G interpose one floating diffusion FD.
  • the transfer gates 22 G is formed with, for example, a conductive light-blocking material such as polysilicon.
  • the transfer transistor 22 is configured so as to transfer the signal charges accumulated in the photodiode 21 as an output signal to the floating diffusion FD by applying a transfer signal from the transfer line 26 to the gate of the transfer transistor 22 .
  • the one terminal of the transfer transistor 22 is electrically connected to the cathode of the photodiode 21 .
  • the other terminal of the transfer transistor 22 is electrically connected to one floating diffusion FD.
  • a pair of the transfer transistors 22 aligned in the vertical direction y are configured to transfer the signal charges to the floating diffusion FD. Therefore, the signal charges of a pair of the transfer transistors 22 aligned in the vertical direction y are added to the floating diffusion FD and output to the gate of the amplification transistor 23 .
  • the amplification transistor 23 is disposed on the imaging plane (xy plane) under the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the amplification transistor 23 is disposed on the imaging plane (xy plane) under the plurality of the photodiodes 21 aligned in the horizontal direction x and the vertical direction y.
  • the amplification transistor 23 is disposed so that a pair of the source and the drain interposes the channel in the horizontal direction.
  • the amplification transistor 23 is configured to amplify and output the electrical signal output from the transfer transistor 22 .
  • the gate of the amplification transistor 23 is connected to the floating diffusion FD.
  • the drain of the amplification transistor 23 is connected to the power supply voltage Vdd, and the source thereof is connected through the selection transistor 24 to the vertical signal line 27 .
  • the selection transistor 24 is selected so as to be in the on state, the amplification transistor 23 is supplied with a constant current from a constant current source I, so that the amplification transistor 23 operates as a source follower. Therefore, when a selection signal is supplied to the selection transistor 24 , the output signal output from the floating diffusion FD is amplified by the amplification transistor 23 .
  • the selection transistor 24 is disposed on the imaging plane (xy plane) under the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the selection transistor 24 is disposed on the imaging plane (xy plane) under the plurality of the photodiodes 21 aligned in the horizontal direction x and the vertical direction y.
  • the selection transistor 24 is disposed so that a pair of the source and the drain interposes the channel in the horizontal direction.
  • the selection transistor 24 is configured so as to output the electrical signal output by the amplification transistor 23 to the vertical signal line 27 when the selection signal is input.
  • the gate of the selection transistor 24 is connected to the address line 28 supplied with the selection signal.
  • the selection transistor 24 is turned on to output the output signal, which is amplified by the amplification transistor 23 as described above, to the vertical signal line 27 .
  • the reset transistor 25 is disposed on the imaging plane (xy plane) under the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the reset transistor 25 is disposed on the imaging plane (xy plane) under the plurality of the photodiodes 21 aligned in the horizontal direction x and the vertical direction y.
  • the reset transistor 25 is disposed so that a pair of the source and the drain interposes the channel in the horizontal direction.
  • the reset transistor 25 is configured so as to reset the potential of the gate of the amplification transistor 23 .
  • the gate of the reset transistor 25 is connected to the reset line 29 supplied with the reset signal.
  • the drain of the reset transistor 25 is connected to the power supply voltage Vdd, and the source thereof is connected to the floating diffusion FD.
  • the reset transistor 25 resets the potential of the gate of the amplification transistor 23 to the power supply voltage Vdd through the floating diffusion FD.
  • the wire-line layer 111 is disposed on the front surface of the semiconductor substrate 101 where the transfer gates 22 G of the transfer transistors 22 are disposed.
  • the wire-line layer 111 includes wire lines (not shown), and the wire lines in the insulating layer are formed so as to be electrically connected to elements.
  • the wire lines are formed through lamination in the insulating layer so as to function as wire lines such as a transfer line 26 , an address line 28 , a vertical signal line 27 , and a reset line 29 illustrated in FIG. 5 .
  • the wire lines are disposed.
  • the color filter CF is disposed at the side of the front surface of the semiconductor substrate 101 where the transfer gates 22 G of the transfer transistors 22 are disposed.
  • the color filter CF is disposed on the upper surface of the wire-line layer 111 .
  • the microlenses ML are disposed on the upper surface of the color filter CF.
  • the color filter CF is configured so as to color the incident light according to the subject image to be transmitted through the light-receiving plane JS of the semiconductor substrate 101 .
  • the color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB and is disposed in a Bayer array so as to correspond to each of the unit pixels P.
  • the red filter layer CFR is configured to have high light transmittance with respect to the wavelength range (for example, a range of from 625 to 740 nm) corresponding to red and to color the incident light with red to be transmitted through the light-receiving plane.
  • the red filter layer CFR is formed so that the plane structure thereof is a quadrangular shape.
  • the green filter layer CFG is configured to have high light transmittance with respect to the wavelength range (for example, a range of from 500 to 565 nm) corresponding to green and to color the incident light with green to be transmitted through the light-receiving plane.
  • the green filter layer CFG is formed so that the plane structure thereof is a quadrangular shape.
  • the blue filter layer CFB is configured to have high light transmittance with respect to the wavelength range (for example, a range of from 450 to 485 nm) corresponding to blue and to color the incident light with blue to be transmitted through the light-receiving plane.
  • the blue filter layer CFB is formed so that the plane structure thereof is a quadrangular shape.
  • the color filter CF is configured so that the same color filter layers CFR, CFG, and CFB are disposed in the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 constituting the unit pixel P.
  • the red filter layer CFR is disposed in the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 constituting the unit pixel P.
  • the red filter layer CFR are integrally formed in the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 .
  • the color filter CF is formed by forming a coated layer by coating a coating solution including a coloring pigment and a photoresist resin according to a coating method such as a spin coating method, and after that, performing a pattern process on the coated layer according to a lithography technology.
  • a coating method such as a spin coating method
  • the microlenses ML are disposed at the side of the front surface of the semiconductor substrate 101 where the transfer gates 22 G of the transfer transistors 22 are disposed.
  • the microlenses ML are disposed on the upper surface of the color filter CF.
  • a plurality of the microlenses ML are disposed so as to correspond to the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 constituting the unit pixel P.
  • the microlens ML is disposed above the light-receiving plane JS.
  • the microlens ML is a convex lens of which the center is thicker than the edge and is configured to focus the incident light H to the light-receiving plane JS of the photodiode 21 .
  • the microlens ML is formed by using a transparent organic material such as a styrene resin, an acrylic resin, and a novolac resin.
  • the microlens ML may be formed by using a transparent inorganic material such as SiO 2 , SiN, SiON, SiCN, and HfO.
  • FIG. 7 is a conceptual diagram illustrating a potential in the unit pixel P according to the first embodiment of the invention.
  • a potential in a portion taken along line VII-VII of FIG. 4 is illustrated.
  • the electric field gradient in the photodiode 21 is formed to be increased so that the signal charges are moved to the side of the transfer transistor 22 .
  • FIGS. 8A to 8C are timing charts illustrating pulse signals supplied to portions of the unit pixel P when a signal is read out from the unit pixel P according to the first embodiment of the invention.
  • FIG. 8A illustrates a selection signal (SEL);
  • FIG. 8B illustrates a reset signal (RST); and
  • FIG. 8C illustrates transfer signals (TRF 1 and TRF 2 ) (refer to FIG. 5 )
  • the selection transistor 24 is set to a conduction state.
  • the reset transistor 25 is set to a conduction state. Therefore, the potential of the gate of the amplification transistor 23 is reset.
  • the reset transistor 25 is set to a non-conduction state. In addition, after that, the voltage corresponding to the reset level is read out as the output signal to the column circuit 14 .
  • the transfer transistor 22 is set to a conduction state, so that the signal charges accumulated in the photodiode 21 are transferred to the gate of the amplification transistor 23 .
  • the transfer transistor 22 is set to a non-conduction state. In addition, after that, the voltage corresponding to the signal level according to the amount of the accumulated signal charges is read out as the output signal to the column circuit 14 .
  • the gates of the transistors 22 , 24 , and 25 are connected in units of a row constructed with the plurality of the unit pixels P aligned in the horizontal direction x, the aforementioned operation of driving the unit pixel P is simultaneously performed with respect to the plurality of the unit pixels P aligned in units of a row.
  • the unit pixels P are sequentially selected in the vertical direction in units of a horizontal line (pixel row) according to the selection signal supplied by the aforementioned vertical driving circuit 13 .
  • the transistors of the unit pixels P are controlled according to various timing signals output from the timing generator 18 . Therefore, the output signal of each of the unit pixels P is output to the column circuit 14 through the vertical signal line 27 in each column of the unit pixels P.
  • the signals accumulated in the column circuit 14 are selected by the horizontal driving circuit 15 to be sequentially output to the external output circuit 17 .
  • the signal charges generated by the plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 constituting the unit pixel P are added to be output as the output signal to the vertical signal line 27 .
  • the signal charges of the photodiodes 21 disposed in the four imaging portions PA 1 , PA 2 , PB 1 , and PB 2 are transferred through the transfer transistors 22 to the floating diffusion FD at the same timing.
  • the voltage of the signal level according to the amount of the signal charges added in the floating diffusion FD is read out as the output signal.
  • the signal charges of the photodiodes 21 may be sequentially transferred to the floating diffusion FD at different timings, and the output signal may be driven so as to be read out based on the signal charges added in the floating diffusion FD.
  • FIGS. 9 and 10 are diagrams illustrating main components formed in processes of a method of manufacturing the solid-state imaging device 1 according to the first embodiment of the invention.
  • FIGS. 9 and 10 illustrate a cross section of the imaging area PA similarly to FIG. 6 .
  • the photodiode 21 , the transfer transistor 22 , and the floating diffusion FD are formed.
  • the photodiode 21 is formed by disposing an n-type charge accumulation area in a p well (not shown) disposed in the semiconductor substrate 101 which is an n-type silicon semiconductor. In addition, furthermore, a high-concentration p-type accumulation layer (not shown) is formed on the surface of the n-type charge accumulation area. More specifically, components constituting the photodiode 21 are disposed by appropriately injecting impurity ions into the semiconductor substrate 101 .
  • the transfer transistor 22 is formed by forming a gate insulating film (not shown) on an upper surface of a channel formation area and, after that, by disposing a transfer gate 22 G on an upper surface of the gate insulating film. More specifically, a silicon oxide film (not shown) is formed as the gate insulating film by performing a thermal oxidation process on the surface of the semiconductor substrate 101 . In addition, for example, after a polysilicon film (not shown) is formed on the gate insulating film, a patterning process is performed on the polysilicon film (not shown), so that the transfer gate 22 G is formed.
  • the transfer transistor 22 At the time of forming the transfer transistor 22 , other transistors including the amplification transistor 23 , the selection transistor 24 , and the reset transistor 25 are formed in a similar manner.
  • the floating diffusion FD is formed by injecting n-type impurity ions into an upper layer of the semiconductor substrate 101 . At the time of forming the floating diffusion FD, the source and drain regions of each transistor are also formed in a similar manner.
  • the wire-line layer 111 is formed.
  • the wire-line layer 111 is disposed on the surface where the transfer gate 22 G of the transfer transistor 22 is disposed.
  • the wire-line layer 111 is disposed by forming an insulating layer by using an insulating material such as silicon oxide film and, at the same time, by forming a wire line (not shown) by using a metal material such as aluminum.
  • the color filter CF is disposed on the surface where the wire-line layer 111 is coated in the semiconductor substrate 101 .
  • a microlens ML is disposed on the color filter CF.
  • the components are disposed, so that the solid-state imaging device 1 is completed as a CMOS type image sensor.
  • a plurality of the unit pixels P are disposed in the imaging area PA which captures a color image.
  • a plurality of the unit pixels P are disposed in the imaging area PA in each of the horizontal direction x and the vertical direction y.
  • the unit pixels P are disposed in a Bayer array in the imaging area PA so as to receive light of each of three primary colors.
  • the unit pixels P of red and the unit pixels P of green aligned in the vertical direction y to be adjacent to the unit pixels P of red are arrayed at the left side.
  • the unit pixels P of green and the unit pixels P of blue aligned in the vertical direction y to be adjacent to the unit pixels P of green are arrayed at the right side (refer to FIG. 3 ).
  • a plurality of the photodiodes 21 are arrayed in each of the unit pixels P so as to receive light of the same color and generate the signal charges.
  • a plurality of the transfer gates 22 G which transfer the signal charges from the photodiodes 21 are formed by using a light blocking material for blocking light to be disposed in the plurality of the photodiodes 21 .
  • the signal charges from the plurality of the photodiodes 21 are configured so as to be transferred by the plurality of the transfer gates 22 G to the floating diffusion FD to be added (refer to FIG. 4 ).
  • the transfer gates 22 G which transfer the signal charges from the photodiodes 21 to the floating diffusion FD are disposed in the imaging portions PA 1 and PB 1 aligned in the horizontal direction x.
  • the transfer gates 22 G which transfer the signal charges from the photodiodes 21 to the floating diffusion FD are disposed in the imaging portions PA 2 and PB 2 aligned in the vertical direction y of the imaging portions PA 1 and PB 1 (refer to FIG. 4 ).
  • the floating diffusions FD are disposed between the photodiodes 21 of the imaging portions PA 1 and PB 1 and the photodiodes 21 of the imaging portions PA 2 and PB 2 aligned in the vertical direction y.
  • the floating diffusions FD are disposed between the transfer gates 22 G of the imaging portions PA 1 and PB 1 and the transfer gates 22 G of the imaging portions PA 2 and PB 2 aligned in the vertical direction y (refer to FIG. 4 ).
  • the solid-state imaging device it is possible to prevent the occurrence of the color shading, so that it is possible to improve the image quality of the color image.
  • FIGS. 11 and 12 are diagrams illustrating behaviors of incident light incident on the unit pixel P according to the first embodiment of the invention.
  • FIG. 11 illustrates a behavior of main light beams H 21 incident on upper pixels PU located in the upper end portion of the imaging area PA where the plurality of the unit pixels P are disposed.
  • FIG. 12 illustrates a behavior of main light beams H 22 incident on lower pixels PL located in the lower end portion of the imaging area PA where the plurality of the unit pixels P are disposed (refer to FIG. 2 ).
  • the description of the wire-line layer 111 and the like is omitted.
  • the main light beams H 21 and H 22 are incident on the upper pixels PU or the lower pixels PL of the imaging area PA not in the direction z perpendicular to the imaging plane (xy plane) of the semiconductor substrate 101 but in the direction slanted with respect to the direction z (refer to FIGS. 1 , 2 , and the like)
  • the red filter layer CFR (not shown in FIGS. 11 and 12 ) is disposed above each of the imaging portions PA 1 and PA 2 , the main light beams H 21 and H 22 are incident as red light to the photodiodes 21 .
  • the imaging portion PA 2 (the upper portion in FIG. 4 ) illustrated at the right side in the upper pixels PU located in the upper end portion of the imaging area PA, a portion of the main light beams H 21 as red light is blocked by the transfer gates 22 G before the main light beams H 21 are incident on the photodiodes 21 .
  • the main light beams H 21 as red light are not blocked by the transfer gates 22 G before the main light beams H 21 are incident on the photodiodes 21 .
  • the vignetting ratios of red light in the upper end portion and the lower end portion of the imaging area PA are the same.
  • the portions where the photodiodes 21 , the transfer gates 22 G, and the floating diffusions FD are disposed are formed so as to be symmetric with respect to the horizontal direction x and the vertical direction y as axes. Therefore, since the positions where the transfer gates 22 G are disposed in the upper portion and the lower portion of the imaging area PA are symmetric with respect to the photodiode 21 which receive the red light, the vignetting ratios of the red light in the upper portion and the lower portion of the imaging area PA are the same.
  • the transfer gates 22 G of the upper pixel PU and the lower pixel PL are disposed so that the vignetting ratios of the red light in the upper end portion and the lower end portion of the imaging area PA are the same.
  • the solid-state imaging device is used in a small-sized electronic apparatus such as a capsule endoscope or a portable camera, as described above, the considerable color shading occurs.
  • a small-sized electronic apparatus such as a capsule endoscope or a portable camera
  • the unit pixel P is configured with a plurality of the imaging portions PA 1 , PA 2 , PB 1 , and PB 2 . Therefore, although the area of the unit pixel P is allowed to be enlarged, since the area of the individual photodiode 21 is small, the distance between the center of each photodiode 21 and the transfer transistor 22 may be shortened. Therefore, since it is possible to improve charge transfer efficiency, it is possible to suppress the occurrence of the afterimage.
  • the unit pixel P includes microlenses ML which focus light to the photodiodes 21 .
  • a plurality of the microlenses ML are disposed corresponding to a plurality of the photodiodes 21 . Therefore, the incident light H is focused on the light-receiving plane of each of the photodiodes 21 , so that the light receiving amount may be increased. Accordingly, it is possible to improve sensitivity.
  • a plurality of the floating diffusions FD are disposed in the unit pixel P, and the plurality of the floating diffusions FD are electrically connected to each other by wire lines. Therefore, the efficiency of conversion of signal charges to a voltage in the floating diffusions FD may be decreased by adjusting FD wire line capacitance, so that it is possible to appropriately perform signal detection.
  • the saturated signal amount of the solid-state imaging device is determined according to the number of the signal charges (the number of electrons or the number of holes) accumulated in the photodiode 21 , a range of the floating diffusion FD, and a range of the latter-stage circuit (for example, an A/D converter).
  • the number of signal charges which may be accumulated in the photodiodes 21 is increased by increasing the size of the unit pixel, In the case of exceeding the range of the floating diffusion FD, signal detection is difficult. However, the signal detection may be performed by decreasing the conversion efficiency. In addition, since the number of the signal charges which may be accumulated in the photodiodes 21 may be increased, it is possible to prevent deterioration in image quality caused by light-shot noise.
  • the power consumption is increased in the case of increasing the range of the floating diffusion FD or the range of A/D converter by increasing the power supply voltage, it is unnecessary to increase the power supply voltage according to the aforementioned configuration, so that it is possible to reduce power consumption.
  • a small-sized electronic apparatus such as a capsule endoscope
  • no battery is provided therein, or a battery having a small capacity is provided, so that very low power consumption is necessary. Therefore, the aforementioned configuration is particularly suitable.
  • the thickness of the gate oxide film is necessarily increased according to an increase in the power supply voltage, the occurrence of noise may be increased. Therefore, it is unnecessary to increase the power supply voltage according to the aforementioned configuration, so that it is possible to decrease the occurrence of noise.
  • the invention is not limited thereto.
  • the plurality of the amplification transistors 23 may be disposed in the unit pixel P.
  • FIG. 13 is a diagram illustrating main components of a solid-state imaging device according to a second embodiment of the invention.
  • FIG. 13 illustrates a cross section of one unit pixel P similarly to FIG. 6 .
  • a cross section of a portion taken along line XIII-XIII of FIG. 4 is illustrated.
  • an optical waveguide 131 is disposed. Except for this point and the associated points, the embodiment is the same as the first embodiment. Therefore, with respect to the redundant portions, some description is omitted.
  • the optical waveguide 131 is disposed at the side of the surface of the semiconductor substrate 101 , on which the incident light H is incident.
  • the optical waveguide 131 is formed to be interposed between the microlens ML and the light-receiving plane JS of the photodiode 21 , so that the incident light H incident through the microlens ML is guided to the light-receiving plane JS of the photodiode 21 .
  • the optical waveguide 131 is a core portion of guiding light and is formed with an optical material of which the reflective index is higher than that of an insulating layer constituting a wire-line layer 111 in the periphery thereof.
  • the optical waveguide 131 which is the core portion is formed so as to totally reflect the incident light on the interface with respect to the clad portion.
  • each unit pixel P includes the optical waveguide 131 which guides light to the photodiode 21 .
  • a plurality of the optical waveguides are disposed corresponding to the photodiodes 21 disposed in each of the imaging portions (PA 1 , PA 2 , and the like).
  • the incident light H is guided to the light-receiving planes JS of the photodiodes 21 by the optical waveguides 131 with high efficiency, so that it is possible to increase the light receiving amount. Therefore, it is possible to improve sensitivity.
  • FIGS. 14 to 16 are diagrams illustrating main components of a solid-state imaging device according to a third embodiment of the invention.
  • FIG. 14 illustrates an upper surface of an imaging area PA where a plurality of unit pixels P are arrayed in a solid-state imaging device similarly to FIG. 3 .
  • FIG. 15 illustrates an upper surface of one unit pixel P similarly to FIG. 4 .
  • an upper surface of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 14 is disposed is exemplarily illustrated.
  • the unit pixel P (green pixel) where the green filter layer CFG in FIG. 14 is disposed and the unit pixel P (blue pixel) where the blue filter layer CFB is disposed also have the same configuration as the unit pixel P (red pixel) where the red filter layer CFR is disposed.
  • FIG. 16 illustrates a circuit configuration of one unit pixel P similarly to FIG. 5 .
  • a circuit configuration of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 14 is disposed is exemplarily illustrated.
  • the green pixel and the blue pixel also have the same circuit configuration as that of the red pixel.
  • the number of the imaging portions PA 1 to PA 4 , PB 1 to PB 4 , PC 1 to PC 4 , and PD 1 to PD 4 constituting the unit pixel P is different from that of the first embodiment. Besides, the configuration of the unit pixel P is different. Except for this point and the associated points, the embodiment is the same as the first embodiment. Therefore, with respect to the redundant portions, some description is omitted.
  • a color filter CF is disposed in each of the unit pixels P.
  • the color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB and is disposed in a Bayer array in each of the unit pixels P.
  • each of the unit pixels P is configured to include a plurality of the imaging portions PA 1 to PA 4 , PB 1 to PB 4 , PC 1 to PC 4 , and PD 1 to PD 4 .
  • a total of 16 imaging portions PA 1 to PA 4 , PB 1 to PB 4 , PC 1 to PC 4 , and PD 1 to PD 4 are included in the unit pixel P.
  • the imaging portions PA 1 to PA 4 , PB 1 to PB 4 , PC 1 to PC 4 , and PD 1 to PD 4 are arrayed in the imaging plane (xy plane) so as to be aligned in units of four in each of the horizontal direction x and the vertical direction y.
  • two imaging portions are aligned in each of the horizontal direction x and the vertical direction y, so that the groups GA 1 , GA 2 , GB 1 , and GB 2 including a total of the four imaging portions (PA 1 , PA 2 , PB 1 , PB 2 , or the like) are repetitively arrayed in the horizontal direction x and the vertical direction y.
  • a photodiode 21 and a transfer transistor 22 are disposed in each of the groups GA 1 , GA 2 , GB 1 , and GB 2 .
  • a transistor group constructed as a set of an amplification transistor 23 , a reset transistor 25 , and a selection transistor 24 is disposed in each of the groups GA 1 , GA 2 , GB 1 , and GB 2 .
  • the unit pixel P is disposed to include the four groups GA 1 , GA 2 , GB 1 , and GB 2 which share the transistor group constructed as a set of the four imaging portions (PA 1 , PA 2 , PB 1 , and PB 2 ).
  • a portion of the groups GA 1 , GA 2 , GB 1 , and GB 2 including the four imaging portions is configured to be different from the unit pixel P according to the first embodiment (refer to FIG. 4 ).
  • each of the groups GA 1 , GA 2 , GB 1 , and GB 2 the position of the floating diffusion FD is different from that in the unit pixel P according to the first embodiment.
  • the positions of the transfer gates 22 G are different. Except for this point and the associated points, each of the groups GA 1 , GA 2 , GB 1 , and GB 2 according the embodiment is the same as the unit pixel P according to the first embodiment.
  • a plurality of the floating diffusions FD are not disposed, but one floating diffusion FD is disposed.
  • the one floating diffusions FD are disposed to be located between all the four photodiodes 21 disposed in the imaging portions (PA 1 , PA 2 , PB 1 , PB 2 , and the like).
  • the floating diffusions FD are disposed between the plurality of the imaging portions (a set of PA 1 and PB 2 , a set of PA 2 and PB 1 , or the like) aligned in the vertical direction y, the horizontal direction x, and the direction slanted with respect to the vertical direction y and the horizontal direction x.
  • a plurality of the transfer gates 22 G are disposed in each of the groups GA 1 , GA 2 , GB 1 , and GB 2 .
  • the transfer gates 22 G are disposed so that the floating diffusions FD are interposed between the four transfer gates 22 G disposed in the imaging portions (PA 1 , PA 2 , PB 1 , PB 2 , and the like).
  • the transfer gates 22 G are disposed so as to be aligned through the floating diffusions FD between the plurality of the imaging portions (a set of PA 1 and PB 2 , a set of PA 2 and PB 1 , or the like) aligned in the vertical direction y, the horizontal direction x, and the direction slanted with respect to the vertical direction y and the horizontal direction x.
  • the groups GA 1 , GA 2 , GB 1 , and GB 2 including the four imaging portions are electrically connected to each other and are disposed so as to add the signals from the imaging portions and to output the added signal.
  • each of the vertical signal lines 27 electrically connects the groups (a set OF GA 1 and GA 2 or a set of GB 1 and GB 2 ) aligned in the vertical direction y.
  • the groups (a set of GA 1 and GB 1 or a set of GA 2 and GB 2 ) aligned in the horizontal direction x are electrically connected to each other by the wire lines Hab and Hcd.
  • the wire lines Hab and Hcd are disposed so as to electrically connect wire lines which electrically connect the floating diffusions FD and the gate of the amplification transistor 23 .
  • a wire line HV is disposed so that the two vertical signal lines 27 are electrically connected to each other at the output end portions of outputting the electrical signal from the unit pixel P.
  • the signal charges generated by the plurality of the imaging portions PA 1 to PA 4 , PB 1 to PB 4 , PC 1 to PC 4 , and PD 1 to PD 4 constituting the unit pixel P are added to be output as an output signal to each of the vertical signal lines 27 .
  • the signal output from each of the vertical signal lines 27 is smoothed by a smoothing circuit (not shown) of the following stage.
  • the portions where the photodiodes 21 , the transfer gates 22 G, and the floating diffusions FD are disposed are symmetric with respect to the horizontal direction x and the vertical direction y as axes. Therefore, similarly to the first embodiment, vignetting ratios of each color light in the upper portion and the lower portion of the imaging area PA become the same, so that it is possible to prevent the occurrence of the color shading. Besides, similarly to the first embodiment, it is possible to effectively prevent the occurrence of the afterimage or the like.
  • a plurality of the amplification transistors 23 are disposed, and a plurality of the vertical signal lines 27 are disposed.
  • the plurality of the vertical signal lines 27 is electrically connected to each other. Therefore, as described above, the signals output from the plurality of the vertical signal lines 27 are smoothed, so that it is possible to reduce random noise.
  • FIG. 17 is a diagram illustrating main components of a solid-state imaging device according to a fourth embodiment of the invention.
  • FIG. 17 illustrates a circuit configuration of one unit pixel P similarly to FIG. 16 .
  • a circuit configuration of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 14 is disposed is exemplarily illustrated.
  • the green pixel and the blue pixel also have the same circuit configuration as the red pixel.
  • the vertical signal line 27 constituting the unit pixel P is different from that of the third embodiment. Except for this point and the associated points, the embodiment is the same as the third embodiment. Therefore, with respect to the redundant portions, some description is omitted.
  • the groups GA 1 , GA 2 , GB 1 , and GB 2 including the four imaging portions are disposed so that the groups GA 1 , GA 2 , GB 1 , and GB 2 are electrically connected to each other so as to add the signals from the imaging portions and to output the added signal.
  • one vertical signal line 27 which output the electrical signal from the unit pixel P is disposed, and the four groups GA 1 , GA 2 , GB 1 , and GB 2 are electrically connected to the one vertical signal line 27 .
  • a plurality of the amplification transistors 23 are disposed in each of the groups GA 1 , GA 2 , GB 1 , and GB 2 , and the sources of the amplification transistors 23 are electrically connected to a common vertical signal line 27 .
  • the signal charges generated by the plurality of the imaging portions PA 1 to PA 4 , PB 1 to PB 4 , PC 1 to PC 4 , and PD 1 to PD 4 constituting the unit pixel P are added to be output as an output signal to the common vertical signal line 27 .
  • the portions where the photodiodes 21 , the transfer gates 22 G, and the floating diffusions FD are disposed are symmetric with respect to the horizontal direction x and the vertical direction y as axes. Therefore, similarly to the third embodiment, vignetting ratios of each color light in the upper portion and the lower portion of the imaging area PA become the same, so that it is possible to prevent the occurrence of the color shading. Besides, similarly to the first embodiment, it is possible to effectively prevent the occurrence of the afterimage or the like.
  • the plurality of the amplification transistors 23 are disposed in the unit pixel P, and the sources of the plurality of the amplification transistors 23 are electrically connected to a common vertical signal line 27 .
  • the invention is not limited thereto.
  • the invention may be adapted to other electronic apparatuses having a solid-state imaging device such as scanners or copiers.
  • the invention is not limited thereto.
  • An appropriate number of the photodiodes may be disposed in the unit pixel P.
  • the pixel transistor including four types of transistors, that is, the transfer transistor, the amplification transistor, the selection transistor, and the reset transistor are disclosed, the invention is not limited thereto.
  • the solid-state imaging device 1 corresponds to a solid-state imaging device according to the invention.
  • the unit pixel P corresponds to a unit pixel according to the invention.
  • the imaging area PA corresponds to an imaging area according to the invention.
  • the photodiode 21 corresponds to a photoelectric conversion portion according to the invention.
  • the transfer gate 22 G corresponds to a transfer gate according to the invention.
  • the floating diffusion FD corresponds to a floating diffusion according to the invention.
  • the amplification transistor 23 corresponds to an amplification transistor according to the invention.
  • the vertical signal line 27 corresponds to a vertical signal line according to the invention.
  • the microlens ML corresponds to a microlens according to the invention.
  • the optical waveguide 131 corresponds to an optical waveguide according to the invention.
  • the camera 40 corresponds to an electronic apparatus according to the invention.

Abstract

Provided is a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The invention relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus.
  • 2. Description of the Related Art
  • An electronic apparatus such as a digital camera includes a solid-state imaging device. For example, the solid-state imaging device includes a CMOS (Complementary Metal Oxide Semiconductor) type image sensor and a CCD (Charge Coupled Device) type image sensor.
  • In the solid-state imaging device, an imaging area where a plurality of unit pixels are arrayed in a matrix shape is disposed in a semiconductor substrate. In each of the unit pixels, a photoelectric conversion portion is disposed. The photoelectric conversion portion is, for example, a photodiode and generates signal charges by receiving incident light incident through an externally attached optical system by a light-receiving plane and photoelectrically converting the light.
  • Among the solid-state imaging devices, in the CMOS type image sensor, the unit pixel is configured so that a plurality of transistors are included in addition to the photoelectric conversion portion. The plurality of the transistors are configured to read out the signal charges generated in the photoelectric conversion portion and to output an electrical signal to a signal line. For example, four transistors, that is, a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor are disposed as the pixel transistors on the front surface of the semiconductor substrate. In addition, wire lines of electrically connecting these transistors are provided in the front surface of the semiconductor substrate.
  • There is a demand for solid-state imaging device may be desired to have high sensitivity. Particularly, in a digital camera used under lower luminance such as an endoscope camera and a monitoring camera, high sensitivity is necessary.
  • Therefore, it is considered that the high sensitivity is necessarily implemented by expanding an area of the light-receiving plane by increasing a pixel size.
  • In addition, there have been proposed technologies in which one set of pixel transistors is shared by a plurality of photoelectric conversion portions, so that high sensitivity is implemented by increasing an area occupied by the light-receiving plane in the unit pixel. For example, one set of the pixel transistors is shared by two or four photoelectric conversion portions (for example, refer to Japanese Unexamined Patent Application Publication Nos. 2004-172950, 2006-157953, and 2006-54276).
  • Additionally, there have been proposed techniques in which a microlens for focusing incident light on a light-receiving plane is disposed to each unit pixel, so that high sensitivity is implemented (for example, refer to Japanese Patent No. 2600250).
  • In addition, there have been proposed technologies in which a focusing efficiency is improved by measures such as optimization of the shape of an in-layer lens, reduction of the number of wire-line layers, or introduction of an optical waveguide, so that high sensitivity is implemented (for example, refer to Japanese Unexamined Patent Application Publication Nos. 2002-314058 and 2003-324189).
    • SUMMARY OF THE INVENTION
  • FIG. 18 is a diagram illustrating an array of unit pixels P in a CMOS type image sensor. In FIG. 18, a portion where two unit pixels P in each of the horizontal direction x and the vertical direction y are aligned to be adjacent to each other is illustrated.
  • As illustrated in FIG. 18, in each of the four unit pixels P, a photodiode 21 and a transfer transistor 22 are disposed. In addition, under the four unit pixels P, a transistor group constructed as a set of an amplification transistor 23, a selection transistor 24, and a reset transistor 25 is disposed. In other words, the four unit pixels P including the photodiode 21 and the transfer transistor 22 are configured so as to share the transistor group constructed as a set of the amplification transistor 23, the selection transistor 24, and the reset transistor 25.
  • More specifically, as illustrated in FIG. 18, the two photodiodes 21 are aligned in the vertical direction y. In addition, the transfer gates 22G of the two transfer transistors 22 are disposed so as to be aligned in the vertical direction y between the two photodiodes 21 aligned in the vertical direction y. In addition, between the two transfer gates 22G aligned in the vertical direction y, the floating diffusion FD is disposed.
  • In addition, as illustrated in FIG. 18, sets constructed with the two photodiodes 21, the two transfer gates 22G, and the floating diffusion FD aligned in the vertical direction y are disposed so as to be aligned in the horizontal direction x. Although not shown, the floating diffusions FD aligned in the horizontal direction x are electrically connected to each other, and the floating diffusions FD are connected to the gate of the amplification transistor 23.
  • In addition, as illustrated in FIG. 18, in each unit pixel P, the microlens ML and the color filter CF are disposed, so that the incident light incident sequentially through the microlens ML and the color filter CF is received by the photodiode 21.
  • The color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB. The red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are adjacent to each other, and one thereof is disposed corresponding to each of the unit pixels P.
  • Herein, as illustrated in FIG. 18, the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are disposed so as to be aligned in a Bayer array.
  • FIGS. 19A and 19B are conceptual diagrams illustrating a potential in the unit pixel P in the CMOS type image sensor. In FIGS. 19A and 19B, the potentials in a portion taken along line XIX-XIX of FIG. 18 are illustrated.
  • As illustrated in FIG. 19A, in the case where the electric field gradient in the photodiode 21 is small, there may be problems in that a transfer time of the signal charges is increased and some signal charges are not transferred but remain, so that an after image occurs.
  • Therefore, as illustrated in FIG. 19B, the occurrence of the problem is suppressed by increasing the electric field gradient in the photodiode 21 so that the signal charges are moved to the side of the transfer transistor 22. In this case, for example, an ion injection process is added, so that the photodiode 21 is formed as illustrated in the above-described potential diagram.
  • FIGS. 20 and 21 are diagrams illustrating behaviors of incident light incident on the unit pixel P of the CMOS type image sensor. Herein, FIG. 20 illustrates a behavior in the case where the main light beams H21 are incident on upper pixels PU disposed in the upper end portion in the imaging area where a plurality of the unit pixels P are arrayed. In addition, FIG. 21 illustrates a behavior in the case where the main light beams H22 are incident on lower pixels PL disposed in the lower end portion in the imaging area where a plurality of the unit pixels P are arrayed.
  • As illustrated in FIGS. 20 and 21, the photodiode 21 and the floating diffusion FD are disposed in an upper layer portion of the semiconductor substrate 101. In addition, the transfer gate 22G constituting the transfer transistor 22 is disposed through a gate insulating film (not shown) on the surface of the semiconductor substrate 101, on which the main light beams H21 and H22 are incident. The transfer gate 22G is formed with, for example, a conductive light-blocking material such as polysilicon.
  • As illustrated in FIGS. 20 and 21, in the upper end portion or the lower end portion of the imaging area, the main light beams H21 and H22 are not incident in the direction z perpendicular to the surface of the semiconductor substrate 101 but they are incident in the direction slanted with respect to the direction z (refer to FIGS. 1 and 2 and refer to FIG. 3 or the like in Japanese Patent No. 2600250). Herein, in each unit pixel P, since the main light beams H21 and H22 are incident through color filters, the main light beams H21 and H22 are incident on the photodiode 21 as colored light such as red light or green light.
  • Therefore, as illustrated in FIG. 20, in the upper pixel PU located in the upper end portion of the imaging area, a portion of the green light among the main light beams H21 is blocked by the transfer gate 22G before the portion of the green light is incident on the photodiode 21. On the other hand, in the adjacent unit pixel P, the red light among the main light beams H21 is not blocked by the transfer gate 22G before the red light is incident on the photodiode 21. In other words, vignetting of the green light occurs, but vignetting of the red light does not occur.
  • On the contrary, as illustrated in FIG. 21, in the lower pixel PL located in the lower end portion of the imaging area, a portion of the red light among the main light beams H22 is blocked by the transfer gate 22G before the portion of the red light is incident on the photodiode 21. On the other hand, in the adjacent unit pixel P, the green light among the main light beam H21 is not blocked by the transfer gate 22G before the green light is incident on the photodiode 21. In other words, unlike the upper end portion of the imaging area, in the lower end portion of the imaging area, vignetting of the green light does not occur, but vignetting of the red light occurs.
  • In this manner, in the end portion of the imaging area, since vignetting ratios are different among the colors, there may be a problem in that the color shading occurs, so that the image quality of the color image is deteriorated.
  • Particularly, in a small-sized electronic apparatus such as a capsule endoscope a portable camera, there may be problems in that the considerable color shading occurs, so that the image quality of the color image is deteriorated. In other words, in the aforementioned small-sized electronic apparatus, in many cases, the volume for mounting an externally-attached lens module is necessarily reduced, and thus, the maximum main light beam angle of the lens is configured to be large for the small thickness of the apparatus, so that the considerable color shading occurs.
  • Besides, in the case where the pixel size is increased in order to improve the sensitivity, there are problems in that, since the distance between the center of the photodiode 21 and the transfer transistor 22 is increased, the charge transfer efficiency is decreased, so that the afterimage occurs.
  • In this manner, in some cases, in the solid-state imaging device, it is difficult to simultaneously obtain prevention of the occurrence of the color shading, the afterimage, or the like and improvement of the sensitivity. As a result, it is difficult to improve the image quality of the captured image.
  • Therefore, it is desirable to provide a solid-state imaging device capable of improving an image quality of a captured image, a method of manufacturing the solid-state imaging device, and an electronic apparatus.
  • According to an embodiment of the invention, there is provided a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
  • Preferably, the unit pixel is configured so that the floating diffusions are interposed by the plurality of the photoelectric conversion portions and so that the plurality of the transfer gates are disposed between the plurality of the photoelectric conversion portions and the floating diffusions.
  • Preferably, a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area; the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in the first direction; and the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the first direction.
  • Preferably, a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area; the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in a direction slanted with respect to the first direction and the second direction; and the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the direction slanted with respect to the first direction and the second direction.
  • Preferably, the plurality of the photoelectric conversion portions are arrayed in the unit pixel so that the same number of the photoelectric conversion portions are aligned in each of the first direction and second direction.
  • Preferably, the plurality of the photoelectric conversion portions are arrayed so that an even number of the photoelectric conversion portions are aligned in each of the first direction and the second direction.
  • Preferably, the plurality of the photoelectric conversion portions are arrayed so that multiples of the four photoelectric conversion portions are aligned in each of the first direction and the second direction.
  • Preferably, the unit pixel includes: an amplification transistor of which the gate is electrically connected to the floating diffusion; and a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion, wherein a plurality of the amplification transistors are disposed in the unit pixel, wherein a plurality of the vertical signal lines are disposed, and the plurality of the vertical signal lines are electrically connected to each other, and wherein the signal output from the plurality of the vertical signal lines are smoothed.
  • Preferably, the unit pixel includes: an amplification transistor of which the gate is electrically connected to the floating diffusion; and a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion, wherein a plurality of the amplification transistors are disposed in the unit pixel, and the sources of the plurality of the amplification transistors are electrically connected to a common vertical signal line.
  • Preferably, the unit pixel includes a microlens which focuses light on the photoelectric conversion portion, and a plurality of the microlenses are disposed corresponding to the plurality of the photoelectric conversion portions.
  • Preferably, the unit pixel includes an optical waveguide which guides light to the photoelectric conversion portion, and a plurality of the optical waveguides are disposed corresponding to the plurality of the photoelectric conversion portions.
  • According to another embodiment of the invention, there is provided a method of manufacturing a solid-state imaging device including the step of forming the solid-state imaging device by disposing a plurality of unit pixels in an imaging area which captures a color image, wherein the step of forming the unit pixel includes the steps of: forming a plurality of photoelectric conversion portions which receive light of the same color to generate signal charges; disposing a plurality of transfer gates, which transfer the signal charges from the photoelectric conversion portions, in the plurality of the photoelectric conversion portions; and forming a floating diffusion to which signal charges from the plurality of the photoelectric conversion portions are transferred through the plurality of the transfer gates to be added.
  • According to still another embodiment of the invention, there is provided an electronic apparatus having a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
  • In the invention, a plurality of unit pixels are disposed so as to capture a color image by an imaging area. Herein, a plurality of photoelectric conversion portions are included in the unit pixel. In addition, a plurality of transfer gates which transfer signal charges from each of the photoelectric conversion portions are included in the unit pixel. In addition, a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates is included in the unit pixel. In the invention, the plurality of the photoelectric conversion portions are formed so as to receive light of the same color and to generate the signal charges. In addition, the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
  • According to the invention, it is possible to provide a solid-state imaging device capable of improving an image quality of a captured image, a method of manufacturing the solid-state imaging device, and an electronic apparatus.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a configurational diagram illustrating a configuration of a camera according to a first embodiment of the invention.
  • FIG. 2 is a diagram illustrating a whole configuration of a solid-state imaging device according to the first embodiment of the invention.
  • FIG. 3 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 4 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 5 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 6 is a diagram illustrating main components of the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 7 is a conceptual diagram illustrating a potential in a unit pixel according to the first embodiment of the invention.
  • FIGS. 8A to 8C are timing charts illustrating pulse signals supplied to portions of the unit pixel when a signal is read out from the unit pixel according to the first embodiment of the invention.
  • FIG. 9 is a diagram illustrating main components formed in processes of a method of manufacturing the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 10 is a diagram illustrating main components formed in processes of a method of manufacturing the solid-state imaging device according to the first embodiment of the invention.
  • FIG. 11 is a diagram illustrating a behavior of incident light incident on the unit pixel according to the first embodiment of the invention.
  • FIG. 12 is a diagram illustrating a behavior of incident light incident on the unit pixel according to the first embodiment of the invention.
  • FIG. 13 is a diagram illustrating main components of a solid-state imaging device according to a second embodiment of the invention.
  • FIG. 14 is a diagram illustrating main components of a solid-state imaging device according to a third embodiment of the invention.
  • FIG. 15 is a diagram illustrating main components of the solid-state imaging device according to the third embodiment of the invention.
  • FIG. 16 is a diagram illustrating main components of the solid-state imaging device according to the third embodiment of the invention.
  • FIG. 17 is a diagram illustrating main components of a solid-state imaging device according to a fourth embodiment of the invention.
  • FIG. 18 is a diagram illustrating an array of unit pixels in a CMOS type image sensor.
  • FIGS. 19A and 19B are conceptual diagrams illustrating a potential in the unit pixel in the CMOS type image sensor.
  • FIG. 20 is a diagram illustrating a behavior of incident light incident on the unit pixel of the CMOS type image sensor.
  • FIG. 21 is a diagram illustrating a behavior of incident light incident on the unit pixel of the CMOS type image sensor.
    •  DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, embodiments of the invention will be described with reference to the drawings.
  • In addition, the description will be made in the following order.
  • 1. First Embodiment (a case where a unit pixel includes 4 PDs)
  • 2. Second Embodiment (a case where there is an optical waveguide)
  • 3. Third Embodiment (a case where a unit pixel includes 16 PDs)
  • 4. Fourth Embodiment (a case where a unit pixel includes 16 PDs)
  • 5. Others
    • 1. First Embodiment (A) Configuration of Apparatus (A-1) Configuration of Main Components of Camera
  • FIG. 1 is a configurational diagram illustrating a configuration of a camera 40 according to a first embodiment of the invention.
  • As illustrated in FIG. 1, the camera 40 is an electronic apparatus and includes a solid-state imaging device 1, an optical system 42, a controller 43, and a signal processing circuit 44.
  • The solid-state imaging device 1 generates signal charges by receiving incident light H incident as a subject image through the optical system 42 by an imaging plane PS and photoelectrically converting the light. In addition, the solid-state imaging device 1 is driven based on a control signal output from the controller 43 to read out the signal charges and output raw data.
  • In the embodiment, as illustrated in FIG. 1, in the solid-state imaging device 1, main light beams H1 emitted from the optical system 42 are incident on the central portion of the imaging plane PS at an angle perpendicular to the imaging plane PS. On the other hand, main light beams H21 and H22 are incident on the peripheral portion of the imaging plane PS at an angle slanted with respect to the direction perpendicular to the imaging plane PS of the solid-state imaging device 1. Herein, the main light beams H21 and H22 are slantingly incident on the imaging plane PS from the center of the imaging plane PS toward the periphery thereof.
  • The optical system 42 includes optical elements such as a focusing lens or an aperture. The optical system 42 is disposed so that incident light according to a subject image is focused on the imaging plane PS of the solid-state imaging device 1.
  • In the embodiment, the optical system 42 is installed so that the optical axis corresponds to the center of the imaging plane PS of the solid-state imaging device 1. Therefore, as illustrated in FIG. 1, the optical system 42 emits the main light beams H1 to the central portion of the imaging plane PS of the solid-state imaging device 1 at the angle perpendicular to the imaging plane PS. On the other hand, the optical system 42 emits the main light beams H21 and H22 to the peripheral portion of the imaging plane PS at an angle slanted with respect to the direction perpendicular to the imaging plane PS. This is caused by finiteness of an exit pupil distance formed by an aperture or the like.
  • The controller 43 outputs various control signals to the solid-state imaging device 1 and the signal processing circuit 44 to control and drive the solid-state imaging device 1 and the signal processing circuit 44.
  • The signal processing circuit 44 is configured to generate a digital image with respect to the subject image by performing a signal process on raw data output from the solid-state imaging device 1.
    • (A-2) Main Components of Solid-State Imaging Device
  • A whole configuration of the solid-state imaging device 1 is described.
  • FIG. 2 is a diagram illustrating a whole configuration of the solid-state imaging device 1 according to the first embodiment of the invention. In FIG. 2, an upper surface is illustrated.
  • The solid-state imaging device 1 according to the embodiment is a CMOS type image sensor and includes a semiconductor substrate 101 as illustrated in FIG. 2. The semiconductor substrate 101 is, for example, a semiconductor substrate made of silicon and, as illustrated in FIG. 2, an imaging area PA and a peripheral area SA are disposed in a surface of the semiconductor substrate 101.
  • As illustrated in FIG. 2, the imaging area PA has a quadrangular shape, in which a plurality of the unit pixels P are disposed in each of the horizontal direction x and the vertical direction y. In other words, the unit pixels P are aligned in a matrix shape. In addition, the imaging area PA is disposed so that the center thereof corresponds to the optical axis of the optical system 42 illustrated in FIG. 1.
  • The imaging area PA corresponds to the imaging plane PS illustrated in FIG. 1. Therefore, as described above, in the unit pixel P disposed at the central portion of the imaging area PA, the main light beams (H1 of FIG. 1) are incident at an angle perpendicular to the plane of the imaging area PA. On the other hand, in the unit pixel P (for example, the upper pixel PU or the lower pixel PL) disposed in the peripheral portion of the imaging area PA, the main light beam (H21 or H22 of FIG. 1) is incident at an angle slanted with respect to the direction perpendicular to the plane of the imaging area PA.
  • As illustrated in FIG. 2, the peripheral area SA is located in the periphery of the imaging area PA. In addition, peripheral circuits are disposed in the peripheral area SA.
  • More specifically, as illustrated in FIG. 2, a vertical driving circuit 13, a column circuit 14, a horizontal driving circuit 15, an external output circuit 17, and a timing generator (TG) 18 are disposed as the peripheral circuits.
  • As illustrated in FIG. 2, the vertical driving circuit 13 is configured to be disposed at a side portion of the imaging area PA in the peripheral area SA so as to select and drive the unit pixels P of the imaging area PA in units of a row of the unit pixels P.
  • As illustrated in FIG. 2, the column circuit 14 is configured to be disposed in the lower end portion of the imaging area PA in the peripheral area SA so as to perform a signal process on the signal output from the unit pixels P in units of a column of the unit pixels P. Herein, the column circuit 14 includes a CDS (Correlated Double Sampling) circuit (not shown) to perform a signal process of removing fixed pattern noise.
  • As illustrated in FIG. 2, the horizontal driving circuit 15 is electrically connected to the column circuit 14. The horizontal driving circuit 15 includes, for example, shift registers to sequentially output signals stored in units of a column of the unit pixels P in the column circuit 14 to the external output circuit 17.
  • As illustrated in FIG. 2, the external output circuit 17 is electrically connected to the column circuit 14. The external output circuit 17 performs a signal process on the signal output from the column circuit 14 and outputs the processed signal to an external portion. The external output circuit 17 includes an AGC (Automatic Gain Control) circuit 17 a and an ADC circuit 17 b. In the external output circuit 17, the AGC circuit 17 a applies a gain to a signal, and after that, the ADC circuit 17 b converts an analog signal to a digital signal to output the digital signal to an external portion.
  • As illustrated in FIG. 2, the timing generator 18 is electrically connected to the vertical driving circuit 13, the column circuit 14, the horizontal driving circuit 15, and the external output circuit 17. The timing generator 18 generates various timing signals and outputs the timing signals to the vertical driving circuit 13, the column circuit 14, the horizontal driving circuit 15, and the external output circuit 17 to perform driving controls of the portions.
    • (A-3) Detailed Configuration of Solid-State Imaging Device
  • A detailed configuration of the solid-state imaging device 1 according to the embodiment is described.
  • FIGS. 3 to 6 are diagrams illustrating main components of the solid-state imaging device 1 according to the first embodiment of the invention.
  • Herein, FIG. 3 illustrates an upper surface of an imaging area PA where a plurality of the unit pixels P are arrayed in the solid-state imaging device 1. In FIG. 3 a portion where two unit pixels P in each of the horizontal direction x and the vertical direction y are aligned to be adjacent to each other is exemplarily illustrated.
  • In addition, FIG. 4 illustrates an upper surface of one unit pixel P. In FIG. 4, the upper surface of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 3 is disposed is exemplarily illustrated. In addition, in FIG. 3, the unit pixel P (green pixel) where the green filter layer CFG is disposed and the unit pixel P (blue pixel) where the blue filter layer CFB is disposed also have the same configuration as the unit pixel P (red pixel) where the red filter layer CFR is disposed.
  • In addition, FIG. 5 illustrates a circuit configuration of one unit pixel P. In FIG. 5, similarly to FIG. 4, a circuit configuration of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 3 is disposed is exemplarily illustrated. In addition, the green pixel and the blue pixel also have the same configuration as the red pixel.
  • In addition, FIG. 6 illustrates a cross section of one unit pixel P. In FIG. 6, a cross section of a portion taken along line VI-VI of FIG. 4 is illustrated.
    • (A-3-1) Array of Unit Pixels
  • As illustrated in FIG. 3, in the solid-state imaging device 1, a plurality of the unit pixels P are disposed in each of the horizontal direction x and the vertical direction y.
  • As illustrated in FIG. 3, in the solid-state imaging device 1, in order to capture a color image, each color filter CF is disposed in each of the unit pixels P. The color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB. The red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are adjacent to each other, and one thereof is disposed corresponding to each of the unit pixels P.
  • Herein, as illustrated in FIG. 3, the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB are disposed to be aligned in a Bayer array. In other words, a plurality of the green filter layers CFG are disposed to be aligned in the diagonal direction so as to be in a checkered shape. In addition, the red filter layers CFR and the blue filter layers CFB are disposed to be aligned in the diagonal direction of the plurality of the green filter layers CFG.
  • In addition, although not shown, a light blocking portion (not shown) is disposed in the periphery of each of the red filter layer CFR, the green filter layer CFG, and the blue filter layer CFB so as to partition the unit pixel P.
  • In the embodiment, as illustrated in FIG. 3, each unit pixel P includes a plurality of the imaging portions PA1, PA2, PB1, and PB2. In the embodiment, the unit pixel P is configured to include four imaging portions PA1, PA2, PB1, and PB2.
    • (A-3-2) Each Unit Pixel
  • As illustrated in FIGS. 4 and 5, in the unit pixel P, a plurality of the imaging portions PA1, PA2, PB1, and PB2 are arrayed on the imaging plane (xy plane).
  • The plurality of the imaging portions PA1, PA2, PB1, and PB2 are aligned on the imaging plane (xy plane) in the horizontal direction x and the vertical direction y perpendicular to the horizontal direction x.
  • As illustrated in FIGS. 4 and 5, in each of the imaging portions PA1, PA2, PB1, and PB2, a photodiode 21 and a transfer transistor 22 are disposed. In addition, under the plurality of the imaging portions PA1, PA2, PB1, and PB2, a transistor group constructed as a set of an amplification transistor 23, a selection transistor 24, and a reset transistor 25 is disposed. In other words, the unit pixel P is constructed so that the four imaging portions PA1, PA2, PB1, and PB2, each of which includes the photodiode 21 and the transfer transistor 22, share the set of the amplification transistor 23, the selection transistor 24, and the reset transistor 25.
  • More specifically, as illustrated in FIG. 4, in the area partitioned into the two imaging portions PA1 and PA2 aligned in the vertical direction y, the two photodiodes 21 are disposed so as to be aligned in the vertical direction y in each of the imaging portions PA1 and PA2. In addition, between the photodiodes 21, the transfer gates 22G of the two transfer transistors 22 are disposed so as to be aligned in the vertical direction y in each of the imaging portions PA1 and PA2. In addition, the floating diffusion FD is disposed between the two transfer gates 22G aligned in the vertical direction y.
  • In addition, as illustrated in FIG. 4, the two imaging portions PB1 and PB2 aligned in the vertical direction y are disposed in the same configuration as that of the two imaging portions PA1 and PA2. In other words, sets constructed with the two photodiodes 21, the two transfer gates 22G, and the floating diffusion FD aligned in the vertical direction y are disposed so as to be aligned in the horizontal direction x.
  • Herein, as illustrated in FIG. 5, the floating diffusions FD aligned in the horizontal direction x are electrically connected to each other through a wire line Hab, and the floating diffusions FD are connected to the gate of the amplification transistor 23.
  • Besides, as illustrated in FIGS. 4 and 6, in the unit pixel P, a microlens ML is disposed.
  • As illustrated in FIG. 6, in the unit pixel P, the wire-line layer 111 and the color filter CF are disposed between the microlens ML and the photodiode 21, so that the incident light H incident sequentially through these components is received by the photodiode 21.
  • In addition, as illustrated in FIG. 5, in the unit pixel P, the transfer transistor 22 transfers the signal charges generated by the photodiode 21 to the floating diffusions FD to output an electrical signal through the amplification transistor 23 or the like to the vertical signal line 27.
  • The detail configurations of the components constituting the unit pixel P are sequentially described.
    • (a) Photodiode
  • As illustrated in FIG. 4, in the unit pixel P, a plurality of the photodiodes 21 are disposed on the imaging plane (xy plane). The even number of the photodiodes 21 are disposed to be aligned in each of the horizontal direction x and the vertical direction y to correspond to the array of the imaging portions PA1, PA2, PB1, and PB2. For example, the photodiode 21 is disposed in each of the imaging portions PA1, PA2, PB1, and PB2, of which the size is in a range of from 1 to 2 μm. In other words, the photodiodes 21 are disposed so that the two photodiodes 21 are aligned in an equal interval in each of the horizontal direction x and the vertical direction y.
  • As illustrated in FIG. 6, the photodiodes 21 are disposed in the semiconductor substrate 101.
  • The photodiode 21 is configured so as to generate and accumulate the signal charges by receiving the incident light H incident as a subject image with the light-receiving plane JS and photoelectrically converting the incident light H.
  • For example, the photodiode 21 is configured so that an n-type charge accumulation area (not shown) is formed in a p well (not shown) disposed in the semiconductor substrate 101 which is an n-type silicon semiconductor. In addition, furthermore, in order to suppress a dark current, a p-type accumulation layer (not shown) is configured to be included on the front surface of the semiconductor substrate 101. In other words, the photodiode 21 is formed in a so-called HAD (Hall Accumulated Diode) structure.
  • In addition, as illustrated in FIG. 5, each of the photodiodes 21 is configured so that the accumulated signal charges are transferred to the floating diffusion FD by the transfer transistor 22.
  • In the embodiment, as illustrated in FIGS. 4 and 5, the unit pixel P includes the four photodiodes 21, and the four transfer transistors 22 corresponding to the four photodiodes 21 are disposed in pairs. Herein, the transfer transistor 22 is disposed between the two photodiodes 21 aligned in the vertical direction y. In addition, the floating diffusion FD is disposed between the two transfer transistors 22 disposed between the two photodiodes 21 aligned in the vertical direction y.
  • In addition, as illustrated in FIG. 5, in the unit pixel P, the four photodiodes 21 are configured so as to share a set of an amplification transistor 23, a selection transistor 24, and a reset transistor 25. In other words, with respect to the four photodiodes 21, one amplification transistor 23, one selection transistor 24, and one reset transistor 25 are disposed.
    • (b) Transistors
  • As illustrated in FIG. 4, in the unit pixel P, a transfer transistor 22, an amplification transistor 23, a selection transistor 24, and a reset transistor 25 are disposed on the imaging plane (xy plane). The transfer transistor 22, the amplification transistor 23, the selection transistor 24, and the reset transistor 25 are configured so that signal charges generated in the photodiode 21 are read out to be output as a data signal.
  • Each of the transfer transistor 22, the amplification transistor 23, the selection transistor 24, and the reset transistor 25 is configured with, for example, an N-channel MOS transistor.
  • Detailed Configurations of the transistors are sequentially described.
  • (b-1) Transfer Transistor
  • As illustrated in FIG. 4, in the unit pixel P, a plurality of the transfer transistors 22 are disposed in each of the horizontal direction x and the vertical direction y so as to correspond to a plurality of the imaging portions PA1, PA2, PB1, and PB2.
  • Herein, as illustrated in FIG. 4, the transfer transistors 22 are disposed so that the two transfer transistors 22 interpose the floating diffusion FD disposed between the plurality of the photodiodes 21 aligned in the vertical direction y on the imaging plane (xy plane).
  • As illustrated in FIG. 4, each transfer transistor 22 includes a transfer gate 22G, and the transfer gate 22G is disposed to extend in the horizontal direction x. In addition, the transfer gate 22G is disposed between the photodiodes 21 aligned in the vertical direction y in the unit pixel P.
  • As illustrated in FIG. 6, the transfer gates 22G are disposed on the front surface of the semiconductor substrate 101. Although not shown, a gate insulating film (not shown) is interposed between the transfer gate 22G and the front surface of the semiconductor substrate 101. In addition, the transfer gates 22G are disposed to be adjacent to the floating diffusions FD disposed on the surface layer of the semiconductor substrate 101 so that the two transfer gates 22G interpose one floating diffusion FD. The transfer gates 22G is formed with, for example, a conductive light-blocking material such as polysilicon.
  • As illustrated in FIG. 5, the transfer transistor 22 is configured so as to transfer the signal charges accumulated in the photodiode 21 as an output signal to the floating diffusion FD by applying a transfer signal from the transfer line 26 to the gate of the transfer transistor 22.
  • Herein, as illustrated in FIG. 5, the one terminal of the transfer transistor 22 is electrically connected to the cathode of the photodiode 21. In addition, the other terminal of the transfer transistor 22 is electrically connected to one floating diffusion FD.
  • In the embodiment, a pair of the transfer transistors 22 aligned in the vertical direction y are configured to transfer the signal charges to the floating diffusion FD. Therefore, the signal charges of a pair of the transfer transistors 22 aligned in the vertical direction y are added to the floating diffusion FD and output to the gate of the amplification transistor 23.
  • (b-2) Amplification Transistor
  • As illustrated in FIG. 4, in the unit pixel P, the amplification transistor 23 is disposed on the imaging plane (xy plane) under the plurality of the imaging portions PA1, PA2, PB1, and PB2. In other words, the amplification transistor 23 is disposed on the imaging plane (xy plane) under the plurality of the photodiodes 21 aligned in the horizontal direction x and the vertical direction y. Herein, the amplification transistor 23 is disposed so that a pair of the source and the drain interposes the channel in the horizontal direction.
  • As illustrated in FIG. 5, the amplification transistor 23 is configured to amplify and output the electrical signal output from the transfer transistor 22.
  • More specifically, as illustrated in FIG. 5, the gate of the amplification transistor 23 is connected to the floating diffusion FD. In addition, the drain of the amplification transistor 23 is connected to the power supply voltage Vdd, and the source thereof is connected through the selection transistor 24 to the vertical signal line 27. When the selection transistor 24 is selected so as to be in the on state, the amplification transistor 23 is supplied with a constant current from a constant current source I, so that the amplification transistor 23 operates as a source follower. Therefore, when a selection signal is supplied to the selection transistor 24, the output signal output from the floating diffusion FD is amplified by the amplification transistor 23.
  • (b-3) Selection Transistor
  • As illustrated in FIG. 4, in the unit pixel P, the selection transistor 24 is disposed on the imaging plane (xy plane) under the plurality of the imaging portions PA1, PA2, PB1, and PB2. In other words, similarly to the amplification transistor 23, the selection transistor 24 is disposed on the imaging plane (xy plane) under the plurality of the photodiodes 21 aligned in the horizontal direction x and the vertical direction y. Herein, the selection transistor 24 is disposed so that a pair of the source and the drain interposes the channel in the horizontal direction.
  • As illustrated in FIG. 5, the selection transistor 24 is configured so as to output the electrical signal output by the amplification transistor 23 to the vertical signal line 27 when the selection signal is input.
  • More specifically, as illustrated in FIG. 5, the gate of the selection transistor 24 is connected to the address line 28 supplied with the selection signal. When the selection signal is supplied, the selection transistor 24 is turned on to output the output signal, which is amplified by the amplification transistor 23 as described above, to the vertical signal line 27.
  • (b-4) Reset Transistor
  • As illustrated in FIG. 4, in the unit pixel P, the reset transistor 25 is disposed on the imaging plane (xy plane) under the plurality of the imaging portions PA1, PA2, PB1, and PB2. In other words, similarly to the amplification transistor 23 and the selection transistor 24, the reset transistor 25 is disposed on the imaging plane (xy plane) under the plurality of the photodiodes 21 aligned in the horizontal direction x and the vertical direction y. Herein, the reset transistor 25 is disposed so that a pair of the source and the drain interposes the channel in the horizontal direction.
  • As illustrated in FIG. 5, the reset transistor 25 is configured so as to reset the potential of the gate of the amplification transistor 23.
  • More specifically, as illustrated in FIG. 5, the gate of the reset transistor 25 is connected to the reset line 29 supplied with the reset signal. In addition, the drain of the reset transistor 25 is connected to the power supply voltage Vdd, and the source thereof is connected to the floating diffusion FD. In addition, when the reset signal is supplied from the reset line 29 to the gate, the reset transistor 25 resets the potential of the gate of the amplification transistor 23 to the power supply voltage Vdd through the floating diffusion FD.
    • (c) Wire-Line Layer 111
  • As illustrated in FIG. 6, the wire-line layer 111 is disposed on the front surface of the semiconductor substrate 101 where the transfer gates 22G of the transfer transistors 22 are disposed.
  • The wire-line layer 111 includes wire lines (not shown), and the wire lines in the insulating layer are formed so as to be electrically connected to elements. Herein, the wire lines are formed through lamination in the insulating layer so as to function as wire lines such as a transfer line 26, an address line 28, a vertical signal line 27, and a reset line 29 illustrated in FIG. 5.
  • More specifically, in the wire-line layer 111, in the boundary portion of the unit pixel P or in the boundary portion where the plurality of the imaging portions PA1, PA2, PB1, and PB2 constituting the unit pixel P are aligned, the wire lines are disposed.
    • (d) Color Filter CF
  • As illustrated in FIG. 6, the color filter CF is disposed at the side of the front surface of the semiconductor substrate 101 where the transfer gates 22G of the transfer transistors 22 are disposed.
  • Herein, as illustrated in FIG. 6, the color filter CF is disposed on the upper surface of the wire-line layer 111. In addition, the microlenses ML are disposed on the upper surface of the color filter CF.
  • As illustrated in FIG. 6, the color filter CF is configured so as to color the incident light according to the subject image to be transmitted through the light-receiving plane JS of the semiconductor substrate 101.
  • As illustrated in FIG. 3, the color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB and is disposed in a Bayer array so as to correspond to each of the unit pixels P.
  • More specifically, in the color filter CF, the red filter layer CFR is configured to have high light transmittance with respect to the wavelength range (for example, a range of from 625 to 740 nm) corresponding to red and to color the incident light with red to be transmitted through the light-receiving plane. The red filter layer CFR is formed so that the plane structure thereof is a quadrangular shape.
  • In addition, in the color filter CF, the green filter layer CFG is configured to have high light transmittance with respect to the wavelength range (for example, a range of from 500 to 565 nm) corresponding to green and to color the incident light with green to be transmitted through the light-receiving plane. The green filter layer CFG is formed so that the plane structure thereof is a quadrangular shape.
  • In the color filter CF, the blue filter layer CFB is configured to have high light transmittance with respect to the wavelength range (for example, a range of from 450 to 485 nm) corresponding to blue and to color the incident light with blue to be transmitted through the light-receiving plane. The blue filter layer CFB is formed so that the plane structure thereof is a quadrangular shape.
  • In addition, as illustrated in FIG. 3, the color filter CF is configured so that the same color filter layers CFR, CFG, and CFB are disposed in the plurality of the imaging portions PA1, PA2, PB1, and PB2 constituting the unit pixel P. For example, as illustrated in FIG. 3, in the unit pixel P located at the left lower portion among the four unit pixels P, the red filter layer CFR is disposed in the plurality of the imaging portions PA1, PA2, PB1, and PB2 constituting the unit pixel P. As illustrated in FIG. 6, in the imaging portions PA1, PA2, PB1, and PB2, the red filter layer CFR are integrally formed.
  • For example, the color filter CF is formed by forming a coated layer by coating a coating solution including a coloring pigment and a photoresist resin according to a coating method such as a spin coating method, and after that, performing a pattern process on the coated layer according to a lithography technology.
    • (e) Microlens ML
  • As illustrated in FIG. 6, the microlenses ML are disposed at the side of the front surface of the semiconductor substrate 101 where the transfer gates 22G of the transfer transistors 22 are disposed.
  • Herein, as illustrated in FIG. 6, the microlenses ML are disposed on the upper surface of the color filter CF. A plurality of the microlenses ML are disposed so as to correspond to the plurality of the imaging portions PA1, PA2, PB1, and PB2 constituting the unit pixel P.
  • As illustrated in FIG. 6, the microlens ML is disposed above the light-receiving plane JS. The microlens ML is a convex lens of which the center is thicker than the edge and is configured to focus the incident light H to the light-receiving plane JS of the photodiode 21.
  • For example, the microlens ML is formed by using a transparent organic material such as a styrene resin, an acrylic resin, and a novolac resin. Besides, the microlens ML may be formed by using a transparent inorganic material such as SiO2, SiN, SiON, SiCN, and HfO.
    • (f) Others
  • FIG. 7 is a conceptual diagram illustrating a potential in the unit pixel P according to the first embodiment of the invention. In FIG. 7, a potential in a portion taken along line VII-VII of FIG. 4 is illustrated.
  • As illustrated in FIG. 7, in the embodiment, similarly to the case illustrated in FIG. 19B, the electric field gradient in the photodiode 21 is formed to be increased so that the signal charges are moved to the side of the transfer transistor 22.
  • FIGS. 8A to 8C are timing charts illustrating pulse signals supplied to portions of the unit pixel P when a signal is read out from the unit pixel P according to the first embodiment of the invention. FIG. 8A illustrates a selection signal (SEL); FIG. 8B illustrates a reset signal (RST); and FIG. 8C illustrates transfer signals (TRF1 and TRF2) (refer to FIG. 5)
  • First, as illustrated in FIGS. 8A to 8C, at the first time point t1, the selection transistor 24 is set to a conduction state. In addition, at the second time point t2, the reset transistor 25 is set to a conduction state. Therefore, the potential of the gate of the amplification transistor 23 is reset.
  • Next, at the third time point t3, the reset transistor 25 is set to a non-conduction state. In addition, after that, the voltage corresponding to the reset level is read out as the output signal to the column circuit 14.
  • Next, at the fourth time point t4, the transfer transistor 22 is set to a conduction state, so that the signal charges accumulated in the photodiode 21 are transferred to the gate of the amplification transistor 23.
  • Next, at the fifth time point t5, the transfer transistor 22 is set to a non-conduction state. In addition, after that, the voltage corresponding to the signal level according to the amount of the accumulated signal charges is read out as the output signal to the column circuit 14.
  • In the column circuit 14, a differencing process is performed on the former-read reset level and the latter-read signal level, so that the signal is accumulated. Accordingly, fixed pattern noise generated according to the irregularity or the like of the Vth of each transistor disposed in each unit pixel P is cancelled.
  • Since the gates of the transistors 22, 24, and 25 are connected in units of a row constructed with the plurality of the unit pixels P aligned in the horizontal direction x, the aforementioned operation of driving the unit pixel P is simultaneously performed with respect to the plurality of the unit pixels P aligned in units of a row.
  • More specifically, the unit pixels P are sequentially selected in the vertical direction in units of a horizontal line (pixel row) according to the selection signal supplied by the aforementioned vertical driving circuit 13. In addition, the transistors of the unit pixels P are controlled according to various timing signals output from the timing generator 18. Therefore, the output signal of each of the unit pixels P is output to the column circuit 14 through the vertical signal line 27 in each column of the unit pixels P.
  • In addition, the signals accumulated in the column circuit 14 are selected by the horizontal driving circuit 15 to be sequentially output to the external output circuit 17.
  • In the embodiment, the signal charges generated by the plurality of the imaging portions PA1, PA2, PB1, and PB2 constituting the unit pixel P are added to be output as the output signal to the vertical signal line 27.
  • For example, as illustrated in FIGS. 8A to 8C, the signal charges of the photodiodes 21 disposed in the four imaging portions PA1, PA2, PB1, and PB2 are transferred through the transfer transistors 22 to the floating diffusion FD at the same timing. In addition, the voltage of the signal level according to the amount of the signal charges added in the floating diffusion FD is read out as the output signal.
  • In addition, the signal charges of the photodiodes 21 may be sequentially transferred to the floating diffusion FD at different timings, and the output signal may be driven so as to be read out based on the signal charges added in the floating diffusion FD.
    • (B) Method of Manufacturing Solid-State Imaging Device
  • Hereinafter, main processes of a method of manufacturing the aforementioned solid-state imaging device 1 are described.
  • FIGS. 9 and 10 are diagrams illustrating main components formed in processes of a method of manufacturing the solid-state imaging device 1 according to the first embodiment of the invention. Herein, FIGS. 9 and 10 illustrate a cross section of the imaging area PA similarly to FIG. 6.
    • (B-1) Formation of Photodiode 21, Transfer Transistor 22, and Floating Diffusion FD
  • First, as illustrated in FIG. 9, the photodiode 21, the transfer transistor 22, and the floating diffusion FD are formed.
  • The photodiode 21 is formed by disposing an n-type charge accumulation area in a p well (not shown) disposed in the semiconductor substrate 101 which is an n-type silicon semiconductor. In addition, furthermore, a high-concentration p-type accumulation layer (not shown) is formed on the surface of the n-type charge accumulation area. More specifically, components constituting the photodiode 21 are disposed by appropriately injecting impurity ions into the semiconductor substrate 101.
  • The transfer transistor 22 is formed by forming a gate insulating film (not shown) on an upper surface of a channel formation area and, after that, by disposing a transfer gate 22G on an upper surface of the gate insulating film. More specifically, a silicon oxide film (not shown) is formed as the gate insulating film by performing a thermal oxidation process on the surface of the semiconductor substrate 101. In addition, for example, after a polysilicon film (not shown) is formed on the gate insulating film, a patterning process is performed on the polysilicon film (not shown), so that the transfer gate 22G is formed.
  • At the time of forming the transfer transistor 22, other transistors including the amplification transistor 23, the selection transistor 24, and the reset transistor 25 are formed in a similar manner.
  • The floating diffusion FD is formed by injecting n-type impurity ions into an upper layer of the semiconductor substrate 101. At the time of forming the floating diffusion FD, the source and drain regions of each transistor are also formed in a similar manner.
    • (B-2) Formation of Wire-Line Layer 111
  • Next, as illustrated in FIG. 10, the wire-line layer 111 is formed.
  • Herein, as illustrated in FIG. 10, in the semiconductor substrate 101, the wire-line layer 111 is disposed on the surface where the transfer gate 22G of the transfer transistor 22 is disposed.
  • For example, the wire-line layer 111 is disposed by forming an insulating layer by using an insulating material such as silicon oxide film and, at the same time, by forming a wire line (not shown) by using a metal material such as aluminum.
    • (B-3) Formation of Color Filter CF and Microlens ML
  • Next, as illustrated in FIG. 6, the color filter CF and the microlens ML are formed.
  • Herein, as illustrated in FIG. 6, the color filter CF is disposed on the surface where the wire-line layer 111 is coated in the semiconductor substrate 101. In addition, a microlens ML is disposed on the color filter CF.
  • In this manner, the components are disposed, so that the solid-state imaging device 1 is completed as a CMOS type image sensor.
    • (C) Conclusion
  • In this manner, in the solid-state imaging device 1 according to the embodiment, a plurality of the unit pixels P are disposed in the imaging area PA which captures a color image. A plurality of the unit pixels P are disposed in the imaging area PA in each of the horizontal direction x and the vertical direction y. The unit pixels P are disposed in a Bayer array in the imaging area PA so as to receive light of each of three primary colors. In other words, in the pixel array, the unit pixels P of red and the unit pixels P of green aligned in the vertical direction y to be adjacent to the unit pixels P of red are arrayed at the left side. In addition, the unit pixels P of green and the unit pixels P of blue aligned in the vertical direction y to be adjacent to the unit pixels P of green are arrayed at the right side (refer to FIG. 3).
  • A plurality of the photodiodes 21 (photoelectric conversion portions) are arrayed in each of the unit pixels P so as to receive light of the same color and generate the signal charges. In addition, a plurality of the transfer gates 22G which transfer the signal charges from the photodiodes 21 are formed by using a light blocking material for blocking light to be disposed in the plurality of the photodiodes 21. In addition, the signal charges from the plurality of the photodiodes 21 are configured so as to be transferred by the plurality of the transfer gates 22G to the floating diffusion FD to be added (refer to FIG. 4).
  • More specifically, in each of the unit pixels P, the photodiodes 21 are disposed in each of the imaging portions PA1 and PB1 (sub pixels) aligned in the horizontal direction x. In addition, the photodiodes 21 are disposed in each of the imaging portions PA2 and PB2 aligned in the vertical direction y of the imaging portions PA1 and PB1. In the unit pixel P, the photodiodes 21 are arrayed so that the same number of the photodiodes are aligned in each of the horizontal direction x and the vertical direction y (refer to FIG. 4).
  • In addition, in each of the unit pixels P, the transfer gates 22G which transfer the signal charges from the photodiodes 21 to the floating diffusion FD are disposed in the imaging portions PA1 and PB1 aligned in the horizontal direction x. In addition, the transfer gates 22G which transfer the signal charges from the photodiodes 21 to the floating diffusion FD are disposed in the imaging portions PA2 and PB2 aligned in the vertical direction y of the imaging portions PA1 and PB1 (refer to FIG. 4).
  • In the unit pixel P, the floating diffusions FD are disposed between the photodiodes 21 of the imaging portions PA1 and PB1 and the photodiodes 21 of the imaging portions PA2 and PB2 aligned in the vertical direction y. In addition, the floating diffusions FD are disposed between the transfer gates 22G of the imaging portions PA1 and PB1 and the transfer gates 22G of the imaging portions PA2 and PB2 aligned in the vertical direction y (refer to FIG. 4).
  • Therefore, in the solid-state imaging device according to the embodiment, it is possible to prevent the occurrence of the color shading, so that it is possible to improve the image quality of the color image.
  • Hereinafter, the aforementioned configurations will be described in detail.
  • FIGS. 11 and 12 are diagrams illustrating behaviors of incident light incident on the unit pixel P according to the first embodiment of the invention.
  • Herein, FIG. 11 illustrates a behavior of main light beams H21 incident on upper pixels PU located in the upper end portion of the imaging area PA where the plurality of the unit pixels P are disposed. In addition, FIG. 12 illustrates a behavior of main light beams H22 incident on lower pixels PL located in the lower end portion of the imaging area PA where the plurality of the unit pixels P are disposed (refer to FIG. 2). In addition, for simplifying the description, in FIGS. 11 and 12, the description of the wire-line layer 111 and the like is omitted.
  • As illustrated in FIGS. 11 and 12, the main light beams H21 and H22 are incident on the upper pixels PU or the lower pixels PL of the imaging area PA not in the direction z perpendicular to the imaging plane (xy plane) of the semiconductor substrate 101 but in the direction slanted with respect to the direction z (refer to FIGS. 1, 2, and the like)
  • Herein, as illustrated in FIG. 6, in the unit pixel P, since the red filter layer CFR (not shown in FIGS. 11 and 12) is disposed above each of the imaging portions PA1 and PA2, the main light beams H21 and H22 are incident as red light to the photodiodes 21.
  • Therefore, as illustrated in FIG. 11, in the imaging portion PA2 (the upper portion in FIG. 4) illustrated at the right side in the upper pixels PU located in the upper end portion of the imaging area PA, a portion of the main light beams H21 as red light is blocked by the transfer gates 22G before the main light beams H21 are incident on the photodiodes 21. On the other hand, in the imaging portion PA1 illustrated at the left side, the main light beams H21 as red light are not blocked by the transfer gates 22G before the main light beams H21 are incident on the photodiodes 21.
  • On the contrary, as illustrated in FIG. 12, in the imaging portion PA1 illustrated at the left side in the lower pixels PL located in the lower end portion of the imaging area PA, a portion of the main light beams H21 as red light is blocked by the transfer gates 22G before the main light beams H21 are incident on the photodiodes 21. On the other hand, in the imaging portion PA2 illustrated at the right side, the main light beams H21 as red light are not blocked by the transfer gates 22G before the main light beams H21 are incident on the photodiodes 21.
  • In this manner, the vignetting ratios of red light in the upper end portion and the lower end portion of the imaging area PA are the same. In other words, in the unit pixel P, the portions where the photodiodes 21, the transfer gates 22G, and the floating diffusions FD are disposed are formed so as to be symmetric with respect to the horizontal direction x and the vertical direction y as axes. Therefore, since the positions where the transfer gates 22G are disposed in the upper portion and the lower portion of the imaging area PA are symmetric with respect to the photodiode 21 which receive the red light, the vignetting ratios of the red light in the upper portion and the lower portion of the imaging area PA are the same.
  • Besides the red light, with respect to the blue light and the green light, similarly to the red light, the transfer gates 22G of the upper pixel PU and the lower pixel PL are disposed so that the vignetting ratios of the red light in the upper end portion and the lower end portion of the imaging area PA are the same.
  • Therefore, in the embodiment, as described above, it is possible to prevent the occurrence of the color shading, so that it is possible to improve the image quality of the color image.
  • Particularly, in the case where the solid-state imaging device is used in a small-sized electronic apparatus such as a capsule endoscope or a portable camera, as described above, the considerable color shading occurs. However, in the case according to the embodiment, it is possible to effectively prevent the occurrence of the problem.
  • In addition, in the embodiment, the unit pixel P is configured with a plurality of the imaging portions PA1, PA2, PB1, and PB2. Therefore, although the area of the unit pixel P is allowed to be enlarged, since the area of the individual photodiode 21 is small, the distance between the center of each photodiode 21 and the transfer transistor 22 may be shortened. Therefore, since it is possible to improve charge transfer efficiency, it is possible to suppress the occurrence of the afterimage.
  • In addition, in the embodiment, the unit pixel P includes microlenses ML which focus light to the photodiodes 21. In the unit pixel P, a plurality of the microlenses ML are disposed corresponding to a plurality of the photodiodes 21. Therefore, the incident light H is focused on the light-receiving plane of each of the photodiodes 21, so that the light receiving amount may be increased. Accordingly, it is possible to improve sensitivity.
  • In addition, in the embodiment, a plurality of the floating diffusions FD are disposed in the unit pixel P, and the plurality of the floating diffusions FD are electrically connected to each other by wire lines. Therefore, the efficiency of conversion of signal charges to a voltage in the floating diffusions FD may be decreased by adjusting FD wire line capacitance, so that it is possible to appropriately perform signal detection.
  • In general, the saturated signal amount of the solid-state imaging device is determined according to the number of the signal charges (the number of electrons or the number of holes) accumulated in the photodiode 21, a range of the floating diffusion FD, and a range of the latter-stage circuit (for example, an A/D converter).
  • Although the number of signal charges which may be accumulated in the photodiodes 21 is increased by increasing the size of the unit pixel, In the case of exceeding the range of the floating diffusion FD, signal detection is difficult. However, the signal detection may be performed by decreasing the conversion efficiency. In addition, since the number of the signal charges which may be accumulated in the photodiodes 21 may be increased, it is possible to prevent deterioration in image quality caused by light-shot noise.
  • Although the power consumption is increased in the case of increasing the range of the floating diffusion FD or the range of A/D converter by increasing the power supply voltage, it is unnecessary to increase the power supply voltage according to the aforementioned configuration, so that it is possible to reduce power consumption. In a small-sized electronic apparatus such as a capsule endoscope, no battery is provided therein, or a battery having a small capacity is provided, so that very low power consumption is necessary. Therefore, the aforementioned configuration is particularly suitable. In addition, since the thickness of the gate oxide film is necessarily increased according to an increase in the power supply voltage, the occurrence of noise may be increased. Therefore, it is unnecessary to increase the power supply voltage according to the aforementioned configuration, so that it is possible to decrease the occurrence of noise.
  • Therefore, in the embodiment, it is possible to improve characteristics such as image quality of the captured color image.
  • In addition, in the aforementioned embodiment, although the case where one amplification transistor 23 is disposed in the unit pixel P is described, the invention is not limited thereto. The plurality of the amplification transistors 23 may be disposed in the unit pixel P.
    • 2. Second Embodiment (A) Configuration and the Like of Apparatus
  • FIG. 13 is a diagram illustrating main components of a solid-state imaging device according to a second embodiment of the invention.
  • In addition, FIG. 13 illustrates a cross section of one unit pixel P similarly to FIG. 6. In other words, in FIG. 13, a cross section of a portion taken along line XIII-XIII of FIG. 4 is illustrated.
  • As illustrated in FIG. 13, in the embodiment, an optical waveguide 131 is disposed. Except for this point and the associated points, the embodiment is the same as the first embodiment. Therefore, with respect to the redundant portions, some description is omitted.
  • As illustrated in FIG. 13, the optical waveguide 131 is disposed at the side of the surface of the semiconductor substrate 101, on which the incident light H is incident.
  • As illustrated in FIG. 13, the optical waveguide 131 is formed to be interposed between the microlens ML and the light-receiving plane JS of the photodiode 21, so that the incident light H incident through the microlens ML is guided to the light-receiving plane JS of the photodiode 21.
  • More specifically, the optical waveguide 131 is a core portion of guiding light and is formed with an optical material of which the reflective index is higher than that of an insulating layer constituting a wire-line layer 111 in the periphery thereof. For example, the optical waveguide 131 which is the core portion is formed so as to totally reflect the incident light on the interface with respect to the clad portion.
    • (B) Conclusion
  • In this manner, in the embodiment, each unit pixel P includes the optical waveguide 131 which guides light to the photodiode 21. A plurality of the optical waveguides are disposed corresponding to the photodiodes 21 disposed in each of the imaging portions (PA1, PA2, and the like).
  • Therefore, the incident light H is guided to the light-receiving planes JS of the photodiodes 21 by the optical waveguides 131 with high efficiency, so that it is possible to increase the light receiving amount. Therefore, it is possible to improve sensitivity.
  • Therefore, in the embodiment, it is possible to further improve an image quality of a captured color image.
    • 3. Third Embodiment (A) Configuration and the Like of Apparatus
  • FIGS. 14 to 16 are diagrams illustrating main components of a solid-state imaging device according to a third embodiment of the invention.
  • Herein, FIG. 14 illustrates an upper surface of an imaging area PA where a plurality of unit pixels P are arrayed in a solid-state imaging device similarly to FIG. 3.
  • In addition, FIG. 15 illustrates an upper surface of one unit pixel P similarly to FIG. 4. In other words, in FIG. 15, an upper surface of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 14 is disposed is exemplarily illustrated. In addition, the unit pixel P (green pixel) where the green filter layer CFG in FIG. 14 is disposed and the unit pixel P (blue pixel) where the blue filter layer CFB is disposed also have the same configuration as the unit pixel P (red pixel) where the red filter layer CFR is disposed.
  • In addition, FIG. 16 illustrates a circuit configuration of one unit pixel P similarly to FIG. 5. In FIG. 16, similarly to FIG. 15, a circuit configuration of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 14 is disposed is exemplarily illustrated. In addition, the green pixel and the blue pixel also have the same circuit configuration as that of the red pixel.
  • As illustrated in FIGS. 14 to 16, in the embodiment, the number of the imaging portions PA1 to PA4, PB1 to PB4, PC1 to PC4, and PD1 to PD4 constituting the unit pixel P is different from that of the first embodiment. Besides, the configuration of the unit pixel P is different. Except for this point and the associated points, the embodiment is the same as the first embodiment. Therefore, with respect to the redundant portions, some description is omitted.
    • (A-1) Array of Unit Pixels
  • As illustrated in FIG. 14, similarly to the first embodiment, in the solid-state imaging device, a color filter CF is disposed in each of the unit pixels P. The color filter CF includes a red filter layer CFR, a green filter layer CFG, and a blue filter layer CFB and is disposed in a Bayer array in each of the unit pixels P.
  • As illustrated in FIG. 14, each of the unit pixels P is configured to include a plurality of the imaging portions PA1 to PA4, PB1 to PB4, PC1 to PC4, and PD1 to PD4. In the embodiment, a total of 16 imaging portions PA1 to PA4, PB1 to PB4, PC1 to PC4, and PD1 to PD4 are included in the unit pixel P.
    • (A-2) Each Unit Pixel
  • As illustrated in FIGS. 15 and 16, in the unit pixel P, the imaging portions PA1 to PA4, PB1 to PB4, PC1 to PC4, and PD1 to PD4 are arrayed in the imaging plane (xy plane) so as to be aligned in units of four in each of the horizontal direction x and the vertical direction y.
  • In the unit pixel P, two imaging portions are aligned in each of the horizontal direction x and the vertical direction y, so that the groups GA1, GA2, GB1, and GB2 including a total of the four imaging portions (PA1, PA2, PB1, PB2, or the like) are repetitively arrayed in the horizontal direction x and the vertical direction y.
  • As illustrated in FIGS. 15 and 16, similarly to the first embodiment, among the groups GA1, GA2, GB1, and GB2, in each of the imaging portions PA1 to PA4, PB1 to PB4, PC1 to PC4, and PD1 to PD4, a photodiode 21 and a transfer transistor 22 are disposed. In addition, in each of the groups GA1, GA2, GB1, and GB2, under the set constructed with the four imaging portions (PA1, PA2, PB1, PB2, and the like), a transistor group constructed as a set of an amplification transistor 23, a reset transistor 25, and a selection transistor 24 is disposed. In other words, the unit pixel P is disposed to include the four groups GA1, GA2, GB1, and GB2 which share the transistor group constructed as a set of the four imaging portions (PA1, PA2, PB1, and PB2).
  • However, as illustrated in FIG. 15, in the unit pixel P, a portion of the groups GA1, GA2, GB1, and GB2 including the four imaging portions (PA1, PA2, PB1, PB2, and the like) is configured to be different from the unit pixel P according to the first embodiment (refer to FIG. 4).
  • More specifically, in each of the groups GA1, GA2, GB1, and GB2, the position of the floating diffusion FD is different from that in the unit pixel P according to the first embodiment. In addition, the positions of the transfer gates 22G are different. Except for this point and the associated points, each of the groups GA1, GA2, GB1, and GB2 according the embodiment is the same as the unit pixel P according to the first embodiment.
  • As illustrated in FIG. 15, in each of the groups GA1, GA2, GB1, and GB2, a plurality of the floating diffusions FD are not disposed, but one floating diffusion FD is disposed. The one floating diffusions FD are disposed to be located between all the four photodiodes 21 disposed in the imaging portions (PA1, PA2, PB1, PB2, and the like). In other words, the floating diffusions FD are disposed between the plurality of the imaging portions (a set of PA1 and PB2, a set of PA2 and PB1, or the like) aligned in the vertical direction y, the horizontal direction x, and the direction slanted with respect to the vertical direction y and the horizontal direction x.
  • As illustrated in FIG. 15, a plurality of the transfer gates 22G are disposed in each of the groups GA1, GA2, GB1, and GB2. The transfer gates 22G are disposed so that the floating diffusions FD are interposed between the four transfer gates 22G disposed in the imaging portions (PA1, PA2, PB1, PB2, and the like). In other words, the transfer gates 22G are disposed so as to be aligned through the floating diffusions FD between the plurality of the imaging portions (a set of PA1 and PB2, a set of PA2 and PB1, or the like) aligned in the vertical direction y, the horizontal direction x, and the direction slanted with respect to the vertical direction y and the horizontal direction x.
  • As illustrated in FIG. 16, in the unit pixel P, the groups GA1, GA2, GB1, and GB2 including the four imaging portions (PA1, PA2, PB1, PB2, and the like) are electrically connected to each other and are disposed so as to add the signals from the imaging portions and to output the added signal.
  • More specifically, as illustrated in FIG. 16, in the unit pixel P, a plurality of vertical signal lines 27 are disposed, and each of the vertical signal lines 27 electrically connects the groups (a set OF GA1 and GA2 or a set of GB1 and GB2) aligned in the vertical direction y.
  • In addition, the groups (a set of GA1 and GB1 or a set of GA2 and GB2) aligned in the horizontal direction x are electrically connected to each other by the wire lines Hab and Hcd. Herein, in each of the groups GA1, GA2, GB1, and GB2, the wire lines Hab and Hcd are disposed so as to electrically connect wire lines which electrically connect the floating diffusions FD and the gate of the amplification transistor 23.
  • In addition, furthermore, a wire line HV is disposed so that the two vertical signal lines 27 are electrically connected to each other at the output end portions of outputting the electrical signal from the unit pixel P.
  • In the embodiment, the signal charges generated by the plurality of the imaging portions PA1 to PA4, PB1 to PB4, PC1 to PC4, and PD1 to PD4 constituting the unit pixel P are added to be output as an output signal to each of the vertical signal lines 27. After that, the signal output from each of the vertical signal lines 27 is smoothed by a smoothing circuit (not shown) of the following stage.
    • (B) Conclusion
  • In this manner, similarly to the first embodiment, in the embodiment, in the unit pixel P, the portions where the photodiodes 21, the transfer gates 22G, and the floating diffusions FD are disposed are symmetric with respect to the horizontal direction x and the vertical direction y as axes. Therefore, similarly to the first embodiment, vignetting ratios of each color light in the upper portion and the lower portion of the imaging area PA become the same, so that it is possible to prevent the occurrence of the color shading. Besides, similarly to the first embodiment, it is possible to effectively prevent the occurrence of the afterimage or the like.
  • In addition, in the embodiment, in the unit pixel P, a plurality of the amplification transistors 23 are disposed, and a plurality of the vertical signal lines 27 are disposed. In addition, in the unit pixel P, the plurality of the vertical signal lines 27 is electrically connected to each other. Therefore, as described above, the signals output from the plurality of the vertical signal lines 27 are smoothed, so that it is possible to reduce random noise.
  • Therefore, in the embodiment, it is possible to improve an image quality of a captured color image.
    • 4. Fourth Embodiment (A) Configuration of Apparatus
  • FIG. 17 is a diagram illustrating main components of a solid-state imaging device according to a fourth embodiment of the invention.
  • Herein, FIG. 17 illustrates a circuit configuration of one unit pixel P similarly to FIG. 16. In FIG. 17, similarly to FIG. 16, a circuit configuration of the unit pixel P (red pixel) where the red filter layer CFR in FIG. 14 is disposed is exemplarily illustrated. In addition, the green pixel and the blue pixel also have the same circuit configuration as the red pixel.
  • As illustrated in FIG. 17, in the embodiment, the vertical signal line 27 constituting the unit pixel P is different from that of the third embodiment. Except for this point and the associated points, the embodiment is the same as the third embodiment. Therefore, with respect to the redundant portions, some description is omitted.
  • As illustrated in FIG. 17, the groups GA1, GA2, GB1, and GB2 including the four imaging portions (PA1, PA2, PB1, PB2, and the like) are disposed so that the groups GA1, GA2, GB1, and GB2 are electrically connected to each other so as to add the signals from the imaging portions and to output the added signal.
  • More specifically, as illustrated in FIG. 17, in the unit pixel P, one vertical signal line 27 which output the electrical signal from the unit pixel P is disposed, and the four groups GA1, GA2, GB1, and GB2 are electrically connected to the one vertical signal line 27. In other words, in the unit pixel P, a plurality of the amplification transistors 23 are disposed in each of the groups GA1, GA2, GB1, and GB2, and the sources of the amplification transistors 23 are electrically connected to a common vertical signal line 27.
  • Therefore, in the embodiment, the signal charges generated by the plurality of the imaging portions PA1 to PA4, PB1 to PB4, PC1 to PC4, and PD1 to PD4 constituting the unit pixel P are added to be output as an output signal to the common vertical signal line 27.
    • (B) Conclusion
  • In this manner, similarly to the third embodiment, in the embodiment, in the unit pixel P, the portions where the photodiodes 21, the transfer gates 22G, and the floating diffusions FD are disposed are symmetric with respect to the horizontal direction x and the vertical direction y as axes. Therefore, similarly to the third embodiment, vignetting ratios of each color light in the upper portion and the lower portion of the imaging area PA become the same, so that it is possible to prevent the occurrence of the color shading. Besides, similarly to the first embodiment, it is possible to effectively prevent the occurrence of the afterimage or the like.
  • In addition, in the embodiment, the plurality of the amplification transistors 23 are disposed in the unit pixel P, and the sources of the plurality of the amplification transistors 23 are electrically connected to a common vertical signal line 27.
  • Therefore, in the embodiment, it is possible to improve the image quality of the captured color image.
    • 5. Others
  • When the invention is embodied, the invention is not limited to the aforementioned embodiments, but various modified examples may be employed.
  • For example, in the aforementioned embodiments, although the case where the invention is adapted to a camera is described, the invention is not limited thereto. The invention may be adapted to other electronic apparatuses having a solid-state imaging device such as scanners or copiers.
  • In the aforementioned embodiments, although the case where four or sixteen photodiodes are disposed in the unit pixel P is described, the invention is not limited thereto. An appropriate number of the photodiodes may be disposed in the unit pixel P.
  • In addition, although the pixel transistor including four types of transistors, that is, the transfer transistor, the amplification transistor, the selection transistor, and the reset transistor are disclosed, the invention is not limited thereto.
  • In addition, in the aforementioned embodiment, the solid-state imaging device 1 corresponds to a solid-state imaging device according to the invention. In addition, in the aforementioned embodiment, the unit pixel P corresponds to a unit pixel according to the invention. In addition, in the aforementioned embodiment, the imaging area PA corresponds to an imaging area according to the invention. In addition, in the aforementioned embodiment, the photodiode 21 corresponds to a photoelectric conversion portion according to the invention. In addition, in the aforementioned embodiment, the transfer gate 22G corresponds to a transfer gate according to the invention. In addition, in the aforementioned embodiment, the floating diffusion FD corresponds to a floating diffusion according to the invention. In addition, in the aforementioned embodiment, the amplification transistor 23 corresponds to an amplification transistor according to the invention. In addition, in the aforementioned embodiment, the vertical signal line 27 corresponds to a vertical signal line according to the invention. In addition, in the aforementioned embodiment, the microlens ML corresponds to a microlens according to the invention. In addition, in the aforementioned embodiment, the optical waveguide 131 corresponds to an optical waveguide according to the invention. In addition, in the aforementioned embodiment, the camera 40 corresponds to an electronic apparatus according to the invention.
  • The present application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2010-107265 filed in the Japan Patent Office on May 7, 2010, the entire contents of which are hereby incorporated by reference.
  • It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

Claims (13)

1. A solid-state imaging device comprising
an imaging area where a plurality of unit pixels are disposed to capture a color image,
wherein each of the unit pixels includes:
a plurality of photoelectric conversion portions;
a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and
a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates,
wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and
wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
2. The solid-state imaging device according to claim 1,
wherein the unit pixel is configured so that the floating diffusions are interposed by the plurality of the photoelectric conversion portions and so that the plurality of the transfer gates are disposed between the plurality of the photoelectric conversion portions and the floating diffusions.
3. The solid-state imaging device according to claim 2,
wherein a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area,
wherein the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in the first direction, and
wherein the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the first direction.
4. The solid-state imaging device according to claim 2,
wherein a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area,
wherein the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in a direction slanted with respect to the first direction and the second direction, and
wherein the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the direction slanted with respect to the first direction and the second direction.
5. The solid-state imaging device according to claim 3 or 4, wherein the plurality of the photoelectric conversion portions are arrayed in the unit pixel so that the same number of the photoelectric conversion portions are aligned in each of the first direction and second direction.
6. The solid-state imaging device according to claim 5, wherein the plurality of the photoelectric conversion portions are arrayed so that an even number of the photoelectric conversion portions are aligned in each of the first direction and the second direction.
7. The solid-state imaging device according to claim 6, wherein the plurality of the photoelectric conversion portions are arrayed so that multiples of the four photoelectric conversion portions are aligned in each of the first direction and the second direction.
8. The solid-state imaging device according to claim 2,
wherein the unit pixel includes:
an amplification transistor of which the gate is electrically connected to the floating diffusion; and
a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion,
wherein a plurality of the amplification transistors are disposed in the unit pixel,
wherein a plurality of the vertical signal lines are disposed, and the plurality of the vertical signal lines are electrically connected to each other, and
wherein the signal output from the plurality of the vertical signal lines are smoothed.
9. The solid-state imaging device according to claim 2,
wherein the unit pixel includes:
an amplification transistor of which the gate is electrically connected to the floating diffusion; and
a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion, and
wherein a plurality of the amplification transistors are disposed in the unit pixel, and the sources of the plurality of the amplification transistors are electrically connected to a common vertical signal line.
10. The solid-state imaging device according to claim 1,
wherein the unit pixel includes a microlens which focuses light on the photoelectric conversion portion, and
wherein a plurality of the microlenses are disposed corresponding to the plurality of the photoelectric conversion portions.
11. The solid-state imaging device according to claim 1,
wherein the unit pixel includes an optical waveguide which guides light to the photoelectric conversion portion, and
wherein a plurality of the optical waveguides are disposed corresponding to the plurality of the photoelectric conversion portions.
12. A method of manufacturing a solid-state imaging device comprising the step of forming the solid-state imaging device by disposing a plurality of unit pixels in an imaging area which captures a color image,
wherein the step of forming the unit pixel includes the steps of:
forming a plurality of photoelectric conversion portions which receive light of the same color to generate signal charges;
disposing a plurality of transfer gates, which transfer the signal charges from the photoelectric conversion portions, in the plurality of the photoelectric conversion portions; and
forming a floating diffusion to which signal charges from the plurality of the photoelectric conversion portions are transferred through the plurality of the transfer gates to be added.
13. An electronic apparatus having a solid-state imaging device comprising
an imaging area where a plurality of unit pixels are disposed to capture a color image,
wherein each of the unit pixels includes:
a plurality of photoelectric conversion portions;
a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and
a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates,
wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and
wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
US13/085,676 2010-05-07 2011-04-13 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus Abandoned US20110273597A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US14/495,318 US9438833B2 (en) 2010-05-07 2014-09-24 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
US15/156,564 US9653499B2 (en) 2010-05-07 2016-05-17 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
US15/465,084 US9923005B2 (en) 2010-05-07 2017-03-21 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
US15/894,542 US10050073B2 (en) 2010-05-07 2018-02-12 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
US16/031,345 US10177184B2 (en) 2010-05-07 2018-07-10 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
US16/204,194 US10720458B2 (en) 2010-05-07 2018-11-29 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
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Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110134298A1 (en) * 2008-08-11 2011-06-09 Honda Motor Co., Ltd. Pixel, pixel forming method, imaging device and imaging forming method
US20130021441A1 (en) * 2011-07-22 2013-01-24 Samsung Electronics Co., Ltd. Method and image sensor having pixel structure for capturing depth image and color image
US20130083225A1 (en) * 2011-10-03 2013-04-04 Canon Kabushiki Kaisha Solid-state image sensor and camera
US20140146197A1 (en) * 2012-11-29 2014-05-29 Canon Kabushiki Kaisha Image pickup element, image pickup apparatus, and image pickup system
US20140333812A1 (en) * 2013-05-08 2014-11-13 Canon Kabushiki Kaisha Photoelectric conversion device
US20150124139A1 (en) * 2013-11-06 2015-05-07 Sony Corporation Solid-state imaging device, method of driving the same, and electronic apparatus
US20160006970A1 (en) * 2009-01-15 2016-01-07 Sony Corporation Solid-state imaging device and electronic apparatus
US20160020236A1 (en) * 2013-03-11 2016-01-21 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US20160127669A1 (en) * 2014-11-04 2016-05-05 Canon Kabushiki Kaisha Photoelectric conversion apparatus, image pickup system, and driving method of the photoelectric conversion apparatus
US20160211306A1 (en) * 2015-01-15 2016-07-21 Hyuk Soon CHOI Image sensors
GB2537421A (en) * 2015-04-17 2016-10-19 Stmicroelectronics (Research & Development) Ltd A pixel having a plurality of photodiodes
US9704905B2 (en) 2012-12-10 2017-07-11 Canon Kabushiki Kaisha Solid-state image sensor and method of manufacturing the same
US9773835B2 (en) 2015-03-31 2017-09-26 Sony Corporation Solid-state image sensor, imaging device, and electronic equipment
US20170302872A1 (en) * 2014-10-01 2017-10-19 Sony Corporation Solid-state imaging device, signal processing method, and electronic device
US20170332022A1 (en) * 2015-12-18 2017-11-16 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Imaging method, imaging device, and electronic device
US20180152625A1 (en) * 2016-11-29 2018-05-31 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Control method and electronic apparatus
US20180152647A1 (en) * 2016-11-29 2018-05-31 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image Processing Method And Apparatus, And Electronic Device
US20180209842A1 (en) * 2017-01-25 2018-07-26 Cista System Corp. System and method for visible and infrared high dynamic range sensing
US10154221B2 (en) * 2016-08-24 2018-12-11 Canon Kabushiki Kaisha Imaging device, imaging system, mobile apparatus, and drive method of imaging device
EP3313069A4 (en) * 2015-12-18 2018-12-19 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image sensor, control method, and electronic device
US20190041794A1 (en) * 2017-08-04 2019-02-07 Visera Technologies Company Limited Lens-free image sensor using phase-shifting hologram
US10274742B2 (en) * 2017-03-29 2019-04-30 Samsung Display Co., Ltd. Display device
US10298867B2 (en) 2016-04-22 2019-05-21 Canon Kabushiki Kaisha Imaging device having a plurality of pixels each with a plurality of photoelectric conversion portions covered by one microlens of a plurality of microlenses
US10382675B2 (en) 2016-11-29 2019-08-13 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image processing method and apparatus, and electronic device including a simulation true-color image
US10432905B2 (en) 2016-11-29 2019-10-01 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Method and apparatus for obtaining high resolution image, and electronic device for same
US20190363119A1 (en) * 2018-05-28 2019-11-28 SK Hynix Inc. Image sensor including unit pixel block having common selection transistor
US10586818B2 (en) * 2011-08-22 2020-03-10 Sony Corporation Solid-state imaging device, camera module and electronic apparatus
US10608032B2 (en) 2016-01-15 2020-03-31 Samsung Electronics Co., Ltd. CMOS image sensors
US20200137361A1 (en) * 2012-03-30 2020-04-30 Nikon Corporation Image sensor and image-capturing device
CN112242409A (en) * 2019-07-19 2021-01-19 爱思开海力士有限公司 Image sensing device
US20210143204A1 (en) * 2016-12-27 2021-05-13 Samsung Electronics Co., Ltd. Image sensor and electronic apparatus including the same
US20210337169A1 (en) * 2020-04-22 2021-10-28 Omnivision Technologies, Inc. Image sensor with shifted color filter array pattern and bit line pairs
CN113938584A (en) * 2020-06-26 2022-01-14 爱思开海力士有限公司 Image sensing device
US11233086B2 (en) * 2019-09-30 2022-01-25 Shenzhen GOODIX Technology Co., Ltd. Semiconductor structure of image sensor, chip and electronic apparatus
US11323640B2 (en) * 2019-03-26 2022-05-03 Samsung Electronics Co., Ltd. Tetracell image sensor preforming binning
EP3979627A4 (en) * 2019-05-24 2022-07-20 Sony Semiconductor Solutions Corporation Solid-state imaging device and distance measurement device
CN115775396A (en) * 2021-09-08 2023-03-10 豪威科技股份有限公司 Method for detecting counterfeit fingerprints using a fingerprint sensor under a display
US11658202B2 (en) * 2020-05-15 2023-05-23 Omnivision Technologies, Inc. Dual row select pixel for fast pixel binning

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012253624A (en) * 2011-06-03 2012-12-20 Sony Corp Solid-state imaging device and camera system
JP2014183064A (en) 2013-03-18 2014-09-29 Sony Corp Solid state image pickup device, manufacturing method, and electronic device
JP2015012127A (en) * 2013-06-28 2015-01-19 ソニー株式会社 Solid state image sensor and electronic apparatus
JP6136669B2 (en) * 2013-07-08 2017-05-31 株式会社ニコン Imaging device
WO2015045375A1 (en) * 2013-09-26 2015-04-02 株式会社ニコン Image pickup element and image pickup device
JP2016111425A (en) * 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 Imaging apparatus
JP6527035B2 (en) 2015-06-30 2019-06-05 浜松ホトニクス株式会社 Solid-state imaging device
US10531028B2 (en) * 2015-08-20 2020-01-07 Sony Semiconductor Solutions Corporation Solid-state imaging device, method of driving solid-state imaging device, and electronic device
WO2017057776A1 (en) * 2015-10-02 2017-04-06 オリンパス株式会社 Image-capturing element, endoscope, and endoscope system
JP2017120975A (en) * 2015-12-28 2017-07-06 ルネサスエレクトロニクス株式会社 Imaging element
JP2017126846A (en) * 2016-01-13 2017-07-20 ソニー株式会社 Image pick-up device, driving method of image pick-up device, and electronic apparatus
JP6890295B2 (en) * 2016-03-17 2021-06-18 パナソニックＩｐマネジメント株式会社 Imaging device
KR102333610B1 (en) * 2017-03-06 2021-12-03 에스케이하이닉스 주식회사 Image sensor
KR102354991B1 (en) 2017-05-24 2022-01-24 삼성전자주식회사 Pixel circuit and image sensor including thereof
JP6485675B1 (en) * 2017-09-14 2019-03-20 パナソニックＩｐマネジメント株式会社 Solid-state imaging device and imaging device including the same
JP7115067B2 (en) * 2018-06-28 2022-08-09 株式会社リコー Solid-state imaging device and imaging system
JP6702363B2 (en) * 2018-07-11 2020-06-03 株式会社ニコン Imaging device and imaging device
JP6702364B2 (en) * 2018-07-11 2020-06-03 株式会社ニコン Imaging device and imaging device
JP6973561B2 (en) * 2018-07-11 2021-12-01 株式会社ニコン Image sensor and image sensor
US10805569B2 (en) * 2019-01-29 2020-10-13 Gigajot Technology, Inc. Column-interleaved pixel array
US11233084B2 (en) * 2019-04-05 2022-01-25 SK Hynix Inc. Image sensor having shielding interconnects
CN110010058B (en) * 2019-05-20 2021-01-29 京东方科技集团股份有限公司 Array substrate and display panel
WO2020254937A1 (en) * 2019-06-17 2020-12-24 Photoneo s. r. o. Methods and apparatus for ambient light suppression with subtractive image sensor
KR20220029587A (en) * 2019-07-02 2022-03-08 소니 세미컨덕터 솔루션즈 가부시키가이샤 Solid-state imaging device, driving method thereof, and electronic device
CN110475083B (en) * 2019-08-26 2021-12-14 Oppo广东移动通信有限公司 Pixel structure, image sensor and terminal
WO2021035516A1 (en) * 2019-08-27 2021-03-04 深圳市汇顶科技股份有限公司 Semiconductor structure of image sensor, and chip and electronic apparatus
JP7458746B2 (en) * 2019-11-01 2024-04-01 キヤノン株式会社 Photoelectric conversion device, imaging system and mobile object
JPWO2021145127A1 (en) 2020-01-16 2021-07-22
CN111669521B (en) * 2020-06-23 2023-02-07 中国电子科技集团公司第四十四研究所 CCD structure with inclined horizontal transfer gate
US11594069B1 (en) * 2021-09-08 2023-02-28 Omnivision Technologies, Inc. Anti-spoofing optical fingerprint sensor methods and hardware with color selection

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040159861A1 (en) * 2003-02-13 2004-08-19 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus, method for driving the same and camera using the same
US6956605B1 (en) * 1998-08-05 2005-10-18 Canon Kabushiki Kaisha Image pickup apparatus
US20080180555A1 (en) * 2007-01-12 2008-07-31 Sony Corporation Solid-state imaging device and imaging device
US20090046189A1 (en) * 2007-08-17 2009-02-19 Micron Technology, Inc. Method and apparatus providing shared pixel straight gate architecture
US20100013969A1 (en) * 2008-07-18 2010-01-21 Sony Corporation Solid-state imaging element and camera system
US7705901B2 (en) * 2004-09-24 2010-04-27 Fuifilm Corporation Image pickup apparatus including photosensitive cells each having photosensitive regions partitioned
US20100118167A1 (en) * 2008-11-07 2010-05-13 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits
US8314870B2 (en) * 2009-01-15 2012-11-20 Sony Corporation Solid-state imaging device and electronic apparatus

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600250B2 (en) 1988-02-22 1997-04-16 ソニー株式会社 Solid-state imaging device and video camera
JP2600250Y2 (en) 1993-11-15 1999-10-04 富士電気化学株式会社 Spiral battery
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
US6512546B1 (en) * 1998-07-17 2003-01-28 Analog Devices, Inc. Image sensor using multiple array readout lines
JP3524391B2 (en) * 1998-08-05 2004-05-10 キヤノン株式会社 Imaging device and imaging system using the same
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
JP2001250931A (en) * 2000-03-07 2001-09-14 Canon Inc Solid-state image sensor and image sensing system using the same
JP2002010276A (en) * 2000-06-22 2002-01-11 Olympus Optical Co Ltd Imaging apparatus
JP2002199284A (en) * 2000-12-25 2002-07-12 Canon Inc Image pickup element
JP2002314058A (en) 2001-04-17 2002-10-25 Sony Corp Solid-state image sensing element and its manufacturing method
JP3846572B2 (en) * 2001-09-20 2006-11-15 ソニー株式会社 Solid-state imaging device
JP4117672B2 (en) 2002-05-01 2008-07-16 ソニー株式会社 Solid-state imaging device, solid-state imaging device, and manufacturing method thereof
JP3988189B2 (en) 2002-11-20 2007-10-10 ソニー株式会社 Solid-state imaging device
JP4067054B2 (en) * 2004-02-13 2008-03-26 キヤノン株式会社 Solid-state imaging device and imaging system
JP4584634B2 (en) * 2004-06-29 2010-11-24 オリンパス株式会社 Solid-state imaging device
JP4492250B2 (en) 2004-08-11 2010-06-30 ソニー株式会社 Solid-state image sensor
JP5089017B2 (en) * 2004-09-01 2012-12-05 キヤノン株式会社 Solid-state imaging device and solid-state imaging system
KR100598015B1 (en) * 2005-02-07 2006-07-06 삼성전자주식회사 Cmos active pixel sensor array lay-out with shared readout structure
WO2006085528A1 (en) * 2005-02-10 2006-08-17 Toppan Printing Co., Ltd. Solid-state imaging device and method for manufacturing same
JP4224036B2 (en) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 Image sensor with embedded photodiode region and method of manufacturing the same
JP2006345330A (en) * 2005-06-10 2006-12-21 Hitachi Medical Corp Imaging apparatus
US20070035649A1 (en) * 2005-08-10 2007-02-15 Micron Technology, Inc. Image pixel reset through dual conversion gain gate
JP4599258B2 (en) * 2005-09-16 2010-12-15 富士フイルム株式会社 Solid-state image sensor
JP4971616B2 (en) * 2005-09-27 2012-07-11 キヤノン株式会社 Imaging device
JP4835136B2 (en) * 2005-12-06 2011-12-14 株式会社ニコン Solid-state imaging device having a function for generating a focus detection signal, and an electronic camera
KR100772892B1 (en) * 2006-01-13 2007-11-05 삼성전자주식회사 shared type image sensor with controllable floating diffusion capacitance
JP4329765B2 (en) 2006-01-31 2009-09-09 ソニー株式会社 Solid-state imaging device
JP5066851B2 (en) * 2006-07-05 2012-11-07 株式会社ニコン Imaging device
JP2008060198A (en) * 2006-08-30 2008-03-13 Sony Corp Method for manufacturing solid-state imaging device
US7773138B2 (en) * 2006-09-13 2010-08-10 Tower Semiconductor Ltd. Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme
JP4807253B2 (en) * 2006-12-28 2011-11-02 株式会社デンソー Image data generating apparatus and light receiving device
JP2008205638A (en) * 2007-02-16 2008-09-04 Texas Instr Japan Ltd Solid-state imaging device and its operation method
JP5076568B2 (en) * 2007-03-12 2012-11-21 ソニー株式会社 DATA PROCESSING METHOD, DATA PROCESSING DEVICE, SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, ELECTRONIC DEVICE
JP5104036B2 (en) * 2007-05-24 2012-12-19 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and imaging apparatus
JP4967873B2 (en) * 2007-07-13 2012-07-04 ソニー株式会社 Imaging device
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
US20090091648A1 (en) * 2007-10-09 2009-04-09 Shengmin Lin Multi-resolution Image Sensor Array with High Image Quality Pixel Readout Circuitry
JP5292787B2 (en) * 2007-11-30 2013-09-18 ソニー株式会社 Solid-state imaging device and camera
JP2009177797A (en) * 2007-12-26 2009-08-06 Panasonic Corp Solid-state imaging device and method of driving the same
JP5422914B2 (en) * 2008-05-12 2014-02-19 ソニー株式会社 Method for manufacturing solid-state imaging device
US8035716B2 (en) * 2008-06-13 2011-10-11 Omnivision Technologies, Inc. Wide aperture image sensor pixel
JP4788742B2 (en) * 2008-06-27 2011-10-05 ソニー株式会社 Solid-state imaging device and electronic apparatus
JP5374941B2 (en) * 2008-07-02 2013-12-25 ソニー株式会社 Solid-state imaging device and electronic device
US8860861B2 (en) * 2008-08-11 2014-10-14 Honda Motor Co., Ltd. Pixel, pixel forming method, imaging device and imaging forming method
TWI433307B (en) * 2008-10-22 2014-04-01 Sony Corp Solid state image sensor, method for driving a solid state image sensor, imaging apparatus, and electronic device
WO2010046982A1 (en) * 2008-10-23 2010-04-29 株式会社島津製作所 Optical or radiation imaging apparatus
JP5241454B2 (en) * 2008-12-01 2013-07-17 キヤノン株式会社 Solid-state imaging device and imaging system using the same
JP5267867B2 (en) * 2009-03-06 2013-08-21 ルネサスエレクトロニクス株式会社 Imaging device
KR101094246B1 (en) * 2009-03-16 2011-12-19 이재웅 Wide Dynamic Range CMOS Image Sensor
JP5359465B2 (en) * 2009-03-31 2013-12-04 ソニー株式会社 Solid-state imaging device, signal processing method for solid-state imaging device, and imaging device
JP5476832B2 (en) * 2009-07-23 2014-04-23 ソニー株式会社 Solid-state imaging device and camera
US8130304B2 (en) * 2009-07-24 2012-03-06 Aptina Imaging Corporation Image sensors with pixel charge summing
JP5471117B2 (en) * 2009-07-24 2014-04-16 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and camera
JP5564874B2 (en) * 2009-09-25 2014-08-06 ソニー株式会社 Solid-state imaging device and electronic apparatus
JP5290923B2 (en) * 2009-10-06 2013-09-18 キヤノン株式会社 Solid-state imaging device and imaging device
US8872953B2 (en) * 2009-10-30 2014-10-28 Sony Corporation Solid-state imaging device, manufacturing method thereof, camera, and electronic device
FR2955701A1 (en) * 2010-01-28 2011-07-29 St Microelectronics Sa COMPACT IMAGE SENSOR STRUCTURE
JP5537172B2 (en) * 2010-01-28 2014-07-02 ソニー株式会社 Solid-state imaging device and electronic apparatus
JP6003291B2 (en) * 2011-08-22 2016-10-05 ソニー株式会社 Solid-state imaging device and electronic apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956605B1 (en) * 1998-08-05 2005-10-18 Canon Kabushiki Kaisha Image pickup apparatus
US20040159861A1 (en) * 2003-02-13 2004-08-19 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus, method for driving the same and camera using the same
US7705901B2 (en) * 2004-09-24 2010-04-27 Fuifilm Corporation Image pickup apparatus including photosensitive cells each having photosensitive regions partitioned
US20080180555A1 (en) * 2007-01-12 2008-07-31 Sony Corporation Solid-state imaging device and imaging device
US20090046189A1 (en) * 2007-08-17 2009-02-19 Micron Technology, Inc. Method and apparatus providing shared pixel straight gate architecture
US20100013969A1 (en) * 2008-07-18 2010-01-21 Sony Corporation Solid-state imaging element and camera system
US20100118167A1 (en) * 2008-11-07 2010-05-13 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits
US8314870B2 (en) * 2009-01-15 2012-11-20 Sony Corporation Solid-state imaging device and electronic apparatus

Cited By (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860861B2 (en) * 2008-08-11 2014-10-14 Honda Motor Co., Ltd. Pixel, pixel forming method, imaging device and imaging forming method
US20110134298A1 (en) * 2008-08-11 2011-06-09 Honda Motor Co., Ltd. Pixel, pixel forming method, imaging device and imaging forming method
US9357148B2 (en) * 2009-01-15 2016-05-31 Sony Corporation Solid-state imaging device and electronic apparatus
US9577006B2 (en) * 2009-01-15 2017-02-21 Sony Corporation Solid-state imaging device and electronic apparatus
US9543341B2 (en) * 2009-01-15 2017-01-10 Sony Corporation Solid-state imaging device and electronic apparatus
US20170338259A1 (en) * 2009-01-15 2017-11-23 Sony Corporation Solid-state imaging device and electronic apparatus
US10784306B2 (en) * 2009-01-15 2020-09-22 Sony Corporation Solid-state imaging device and electronic apparatus
US10147758B2 (en) * 2009-01-15 2018-12-04 Sony Corporation Solid-state imaging device and electronic apparatus
US20160006970A1 (en) * 2009-01-15 2016-01-07 Sony Corporation Solid-state imaging device and electronic apparatus
US20160204160A1 (en) * 2009-01-15 2016-07-14 Sony Corporation Solid-state imaging device and electronic apparatus
US20130021441A1 (en) * 2011-07-22 2013-01-24 Samsung Electronics Co., Ltd. Method and image sensor having pixel structure for capturing depth image and color image
US10586818B2 (en) * 2011-08-22 2020-03-10 Sony Corporation Solid-state imaging device, camera module and electronic apparatus
US9300884B2 (en) * 2011-10-03 2016-03-29 Canon Kabushiki Kaisha Solid-state image sensor and camera having a plurality of photoelectric converters under a microlens
US9773827B2 (en) 2011-10-03 2017-09-26 Canon Kabushiki Kaisha Solid-state image sensor and camera where the plurality of pixels form a pixel group under a single microlens
US10504947B2 (en) 2011-10-03 2019-12-10 Canon Kabushiki Kaisha Solid-state image sensor and camera
US11348953B2 (en) 2011-10-03 2022-05-31 Canon Kabushiki Kaisha Solid-state image sensor and camera
US20130083225A1 (en) * 2011-10-03 2013-04-04 Canon Kabushiki Kaisha Solid-state image sensor and camera
US20200137361A1 (en) * 2012-03-30 2020-04-30 Nikon Corporation Image sensor and image-capturing device
US9450006B2 (en) * 2012-11-29 2016-09-20 Canon Kabushiki Kaisha Image pickup element, image pickup apparatus, and image pickup system
US9224776B2 (en) * 2012-11-29 2015-12-29 Canon Kabushiki Kaisha Image pickup element, image pickup apparatus, and image pickup system
US20140146197A1 (en) * 2012-11-29 2014-05-29 Canon Kabushiki Kaisha Image pickup element, image pickup apparatus, and image pickup system
US10763291B2 (en) 2012-12-10 2020-09-01 Canon Kabushiki Kaisha Solid-state image sensor and method of manufacturing the same
US11276722B2 (en) 2012-12-10 2022-03-15 Canon Kabushiki Kaisha Solid-state image sensor and method of manufacturing the same
US9704905B2 (en) 2012-12-10 2017-07-11 Canon Kabushiki Kaisha Solid-state image sensor and method of manufacturing the same
US10038023B2 (en) 2012-12-10 2018-07-31 Canon Kabushiki Kaisha Solid-state image sensor and method of manufacturing the same
US10325948B2 (en) 2012-12-10 2019-06-18 Canon Kabushiki Kaisha Solid-state image sensor and method of manufacturing the same
US9887227B2 (en) 2012-12-10 2018-02-06 Canon Kabushiki Kaisha Solid-state image sensor and method of manufacturing the same
US20160020236A1 (en) * 2013-03-11 2016-01-21 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US20140333812A1 (en) * 2013-05-08 2014-11-13 Canon Kabushiki Kaisha Photoelectric conversion device
US9485444B2 (en) * 2013-05-08 2016-11-01 Canon Kabushiki Kaisha Photoelectric conversion device having connection sections connecting different numbers of output nodes
US9924119B2 (en) * 2013-11-06 2018-03-20 Sony Corporation Solid-state imaging device, method of driving the same, and electronic apparatus
US20150124139A1 (en) * 2013-11-06 2015-05-07 Sony Corporation Solid-state imaging device, method of driving the same, and electronic apparatus
US9641780B2 (en) * 2013-11-06 2017-05-02 Sony Corporation Solid-state imaging device, method of driving the same, and electronic apparatus
US20170302872A1 (en) * 2014-10-01 2017-10-19 Sony Corporation Solid-state imaging device, signal processing method, and electronic device
US20160127669A1 (en) * 2014-11-04 2016-05-05 Canon Kabushiki Kaisha Photoelectric conversion apparatus, image pickup system, and driving method of the photoelectric conversion apparatus
US9456161B2 (en) * 2014-11-04 2016-09-27 Canon Kabushiki Kaisha Photoelectric conversion apparatus, image pickup system, and driving method of the photoelectric conversion apparatus
US10700115B2 (en) 2015-01-15 2020-06-30 Samsung Electronics Co., Ltd. Image sensors
US10199421B2 (en) * 2015-01-15 2019-02-05 Samsung Electronics Co., Ltd. Image sensors
US20160211306A1 (en) * 2015-01-15 2016-07-21 Hyuk Soon CHOI Image sensors
US10741605B2 (en) 2015-03-31 2020-08-11 Sony Corporation Solid-state image sensor, imaging device, and electronic equipment
US10134797B2 (en) 2015-03-31 2018-11-20 Sony Corporation Solid-state image sensor, imaging device, and electronic equipment
US9773835B2 (en) 2015-03-31 2017-09-26 Sony Corporation Solid-state image sensor, imaging device, and electronic equipment
US9865643B2 (en) 2015-03-31 2018-01-09 Sony Corporation Solid-state image sensor, imaging device, and electronic equipment
US10128300B2 (en) 2015-03-31 2018-11-13 Sony Corporation Solid-state image sensor, imaging device, and electronic equipment
GB2537421A (en) * 2015-04-17 2016-10-19 Stmicroelectronics (Research & Development) Ltd A pixel having a plurality of photodiodes
EP3313069A4 (en) * 2015-12-18 2018-12-19 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image sensor, control method, and electronic device
US10313612B2 (en) 2015-12-18 2019-06-04 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image sensor, control method, and electronic device
US10257447B2 (en) * 2015-12-18 2019-04-09 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Imaging method, imaging device, and electronic device
US20170332022A1 (en) * 2015-12-18 2017-11-16 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Imaging method, imaging device, and electronic device
US11348959B2 (en) 2016-01-15 2022-05-31 Samsung Electronics Co., Ltd. CMOS image sensors
US20220293645A1 (en) * 2016-01-15 2022-09-15 Samsung Electronics Co., Ltd. Cmos image sensors
US10608032B2 (en) 2016-01-15 2020-03-31 Samsung Electronics Co., Ltd. CMOS image sensors
US10298867B2 (en) 2016-04-22 2019-05-21 Canon Kabushiki Kaisha Imaging device having a plurality of pixels each with a plurality of photoelectric conversion portions covered by one microlens of a plurality of microlenses
US10154221B2 (en) * 2016-08-24 2018-12-11 Canon Kabushiki Kaisha Imaging device, imaging system, mobile apparatus, and drive method of imaging device
US10469736B2 (en) 2016-11-29 2019-11-05 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Control method and electronic apparatus
US20180152625A1 (en) * 2016-11-29 2018-05-31 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Control method and electronic apparatus
US10432905B2 (en) 2016-11-29 2019-10-01 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Method and apparatus for obtaining high resolution image, and electronic device for same
US20180152647A1 (en) * 2016-11-29 2018-05-31 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image Processing Method And Apparatus, And Electronic Device
US10277803B2 (en) * 2016-11-29 2019-04-30 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Control method and electronic apparatus
US10382675B2 (en) 2016-11-29 2019-08-13 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image processing method and apparatus, and electronic device including a simulation true-color image
US10382709B2 (en) * 2016-11-29 2019-08-13 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Image processing method and apparatus, and electronic device
US20210143204A1 (en) * 2016-12-27 2021-05-13 Samsung Electronics Co., Ltd. Image sensor and electronic apparatus including the same
US20200221011A1 (en) * 2017-01-25 2020-07-09 Cista System Corp. System and method for visible and infrared high dynamic range sensing
US10638054B2 (en) * 2017-01-25 2020-04-28 Cista System Corp. System and method for visible and infrared high dynamic range sensing
US11678063B2 (en) 2017-01-25 2023-06-13 Cista System Corp. System and method for visible and infrared high dynamic range sensing
US10868971B2 (en) * 2017-01-25 2020-12-15 Cista System Corp. System and method for visible and infrared high dynamic range sensing
US20180209842A1 (en) * 2017-01-25 2018-07-26 Cista System Corp. System and method for visible and infrared high dynamic range sensing
US10274742B2 (en) * 2017-03-29 2019-04-30 Samsung Display Co., Ltd. Display device
TWI661283B (en) * 2017-08-04 2019-06-01 Visera Technologies Company Limited Imaging sensor using phase-shifting hologram
US20190041794A1 (en) * 2017-08-04 2019-02-07 Visera Technologies Company Limited Lens-free image sensor using phase-shifting hologram
US10423122B2 (en) * 2017-08-04 2019-09-24 Visera Technologies Company Limited Lens-free image sensor using phase-shifting hologram
US20190363119A1 (en) * 2018-05-28 2019-11-28 SK Hynix Inc. Image sensor including unit pixel block having common selection transistor
US10854649B2 (en) * 2018-05-28 2020-12-01 SK Hynix Inc. Image sensor including unit pixel block having common selection transistor
US11323640B2 (en) * 2019-03-26 2022-05-03 Samsung Electronics Co., Ltd. Tetracell image sensor preforming binning
EP3979627A4 (en) * 2019-05-24 2022-07-20 Sony Semiconductor Solutions Corporation Solid-state imaging device and distance measurement device
CN112242409A (en) * 2019-07-19 2021-01-19 爱思开海力士有限公司 Image sensing device
US11233086B2 (en) * 2019-09-30 2022-01-25 Shenzhen GOODIX Technology Co., Ltd. Semiconductor structure of image sensor, chip and electronic apparatus
US11284045B2 (en) * 2020-04-22 2022-03-22 OmniVision Technologies. Inc. Image sensor with shifted color filter array pattern and bit line pairs
US20210337169A1 (en) * 2020-04-22 2021-10-28 Omnivision Technologies, Inc. Image sensor with shifted color filter array pattern and bit line pairs
US11716546B2 (en) 2020-04-22 2023-08-01 Omnivision Technologies, Inc. Image sensor with shifted color filter array pattern and bit line pairs
US11658202B2 (en) * 2020-05-15 2023-05-23 Omnivision Technologies, Inc. Dual row select pixel for fast pixel binning
CN113938584A (en) * 2020-06-26 2022-01-14 爱思开海力士有限公司 Image sensing device
US11764238B2 (en) 2020-06-26 2023-09-19 SK Hynix Inc. Image sensing device
CN115775396A (en) * 2021-09-08 2023-03-10 豪威科技股份有限公司 Method for detecting counterfeit fingerprints using a fingerprint sensor under a display

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