US20110278260A1 - Inductive plasma source with metallic shower head using b-field concentrator - Google Patents
Inductive plasma source with metallic shower head using b-field concentrator Download PDFInfo
- Publication number
- US20110278260A1 US20110278260A1 US12/780,531 US78053110A US2011278260A1 US 20110278260 A1 US20110278260 A1 US 20110278260A1 US 78053110 A US78053110 A US 78053110A US 2011278260 A1 US2011278260 A1 US 2011278260A1
- Authority
- US
- United States
- Prior art keywords
- conductive
- lid assembly
- disposed
- plasma source
- inductive coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000001939 inductive effect Effects 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000012212 insulator Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 3
- 230000037361 pathway Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 54
- 239000007789 gas Substances 0.000 description 39
- 239000004020 conductor Substances 0.000 description 24
- 238000009826 distribution Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
Definitions
- Embodiments described herein generally relate to manufacturing semiconductor devices. More specifically, embodiments described herein relate to methods and apparatus for plasma processing of substrates.
- Plasma processing is commonly used for many semiconductor fabrication processes for manufacturing integrated circuits, flat-panel displays, magnetic media, and other devices.
- a plasma, or ionized gas is generated inside a processing chamber by application of an electromagnetic field to a low-pressure gas in the chamber, and then applied to a workpiece to accomplish a process such as deposition, etching, or implantation.
- the plasma may also be generated outside the chamber and then directed into the chamber under pressure to increase the ratio of radicals to ions in the plasma for processes needing such treatments.
- Plasma may be generated by electric fields, by magnetic fields, or by electromagnetic fields.
- Plasma generated by an electric field normally uses spaced-apart electrodes to generate the electric field in the space occupied by the gas.
- the electric field ionizes the gas, and the resulting ions and electrons move toward one electrode or the other under the influence of the electric field.
- the electric field can impart very high energies to ions impinging on the workpiece, which can sputter material from the workpiece, damaging the workpiece and creating potentially contaminating particles in the chamber. Additionally, the high potentials accompanying such plasmas may create unwanted electrical discharges and parasitic currents.
- Inductively coupled plasmas are used in many circumstances to avoid some effects of capacitively coupled plasmas.
- An inductive coil is disposed adjacent to a plasma generating region of a processing chamber.
- the inductive coil projects a magnetic field into the chamber to ionize a gas inside the chamber.
- the inductive coil is frequently located outside the chamber, projecting the magnetic field into the chamber through a dielectric window.
- the inductive coil is frequently driven by high-frequency electromagnetic energy, which suffers power losses that rise faster than the voltage applied to the inductive coil.
- strong coupling of the plasma source with the plasma inside the chamber decreases power losses. Control of plasma uniformity is also improved by strong coupling between the plasma source and the plasma.
- Embodiments described herein provide a lid assembly for a plasma chamber, the lid assembly having a first annular inductive coil nested with a first conductive ring.
- a processing chamber for a semiconductor substrate having a chamber body that definines an interior region, a substrate support disposed in the interior region, and a lid assembly disposed in the interior region facing the substrate support, the lid assembly having a gas distributor and a plasma source with a first conductive surface that faces the substrate support, a second conductive surface that faces away from the substrate support, and a plurality of conductive coils disposed in the conductive plasma source between the first surface and the second surface.
- FIG. 1 is a schematic cross-sectional view of a processing chamber according to one embodiment.
- FIG. 2 is a schematic cross-sectional view of a gas distributor according to another embodiment.
- FIG. 3 is an exploded view of a gas distributor according to another embodiment.
- FIG. 1 is a schematic cross-sectional diagram of a processing chamber 100 according to one embodiment.
- the processing chamber 100 comprises a chamber body 102 , a substrate support 104 , and a gas distributor 106 facing the substrate support 104 , which cooperatively define a processing region 118 .
- the gas distributor 106 comprises a showerhead 108 and a plasma source 110 surrounding the showerhead 108 .
- the plasma source 110 comprises a conductive spacer 114 and a conductive coil 112 disposed inside the conductive spacer 114 . There may be one or more conductive coils 112 disposed in the conductive spacer 114 .
- the conductive spacer 114 may be a disk-like member with channels or conduits housing the conductive coils 112 .
- the conductive spacer 114 may be a plurality of rings separating the conductive coils 112 and nesting with the conductive coils 112 .
- Each of the conductive coils 112 is housed in a channel or recess 116 lined with an insulating material.
- the insulating material of the channel or recess 116 prevents electric current travelling from the conductive coils 112 into the conductive spacer 114 .
- the conductive coils 112 produce a magnetic field in the processing region 118 that ionizes a processing gas disposed therein to form a plasma.
- the conductive coil 112 may be a coil assembly featuring a removable insulating member, as further described below in connection with FIG. 2 .
- the conductive spacer 114 provides a large surface area grounded electrode that faces the substrate support 104 .
- the large grounded electrode allows generation of higher voltages at the substrate support using lower power levels.
- Disposing the conductive coils 112 in the conductive spacer 114 also brings the plasma source close to the plasma generation area of the processing region 118 , improving coupling efficiency with the plasma.
- the large grounded surface area of the conductive spacer 114 reduces plasma sheath voltage in the chamber, which reduces sputtering of chamber walls and chamber lid components, reducing contamination of workpieces disposed on the substrate support.
- Use of multiple conductive coils 112 also provides the possibility of using different power levels on the coils to tune the plasma profile in the processing region 118 .
- FIG. 2 is a schematic cross-sectional diagram of a lid assembly 200 according to another embodiment. Similar to the gas distributor 106 of FIG. 1 , the lid assembly 200 comprises a showerhead 202 and a plasma source 204 . A gas conduit 206 connects a gas source (not shown) to the showerhead 202 , placing the gas source in fluid communication with a processing chamber through openings 208 in the showerhead 202 .
- a gas source not shown
- the plasma source 204 comprises a conductive coil 210 disposed in a channel 212 formed between conductive gas distribution members 214 .
- the gas distribution members 214 may be metal or metal alloy, and may be coated with a dielectric material, if desired, or a chemically resistant or plasma resistant material, such as yttria, in some embodiments.
- the conductive coil 210 of which there may be more than one, may also be metal, metal alloy, or a conductive composite such as a metal coated dielectric or a metal composite featuring metals having different conductivities. Material selection for the conductive coil 210 generally depends on the desired thermal and electrical conductivity.
- Materials with lower electrical conductivity are generally lower in cost, but a conductive coil made from low conductivity materials may generate unwanted heat, and may require excessive power to operate. Highly conductive materials such as copper and silver may be used proficiently for a conductive coil. Less conductive and lower cost materials such as aluminum, zinc, or nickel may be included as alloy or layer components.
- Heat may be dissipated by forming the conductive coil 210 with a conduit for a thermal control medium, which may be a cooling liquid such as water or a cooling gas such as nitrogen.
- the conductive coil 210 may be an annular or torroidal tube in some embodiments.
- the tube wall thickness may be specified based on thermal and electrical conductivity needed. Cooling may be useful when high power, for example greater than about 500 W, is to be applied to the conductive coil 210 .
- a conductive coil is a torroidal tube comprising a layer of copper and a layer of silver.
- the channel 212 is generally lined with an insulating member 216 , which may be ceramic or plastic, Teflon, for example.
- the insulating member 216 confines the electric current to the conductive coil 210 .
- the insulating material may be an insert that fits into the channel 212 , or in other embodiments, may be a liner adhered to the inner surface of the channel 212 .
- the embodiment of FIG. 2 features two insulating members 216 , each of which is an annular member that fits inside a respective channel, one of the insulating members 216 fitting inside the innermost channel 212 , which is a first channel in the embodiment of FIG.
- each of the channels 212 has a conductive coil 210 disposed therein.
- each conductive coil comprises two conductive loops 218 .
- a pair of conductive loops 218 rest inside the recesses formed by the respective insulating members 216 .
- each isolator 220 is an annular dielectric member having a recess 224 into which a conductive loop 218 fits.
- the recess 224 of an isolator 220 and the channel 212 into which the isolator 220 fits generally face in opposite directions.
- each conductive loop is surrounded on three sides by an isolator 220 and on one side by an insulating member 216 .
- the isolators 220 may have any convenient cross sectional shape.
- the isolators 220 may be rounded to follow the contours of a rounded, tube-like, conductive loop 218 , such that the recess 224 has a rounded cross-sectional shape.
- the cross-sectional profile of each isolator 220 and/or each recess 224 may be rectangular with beveled corners.
- the conductive loops 218 may be formed with a coating that isolates the loop.
- the isolators 220 may be any insulating material, such as ceramic, glass, or plastic. In the embodiment of FIG. 2 , each isolator 220 is shown as a single piece covering a single conductive loop 218 , but in alternate embodiments, an isolator may be formed to cover two neighboring conductive loops 218 while disposing a wall between them.
- a field concentrator 222 is disposed around each conductive coil 210 to amplify the magnetic field produced by each conductive coil 210 .
- the concentrator 222 is disposed around a pair of conductive loops 218 and their respective isolators 220 , but in other embodiments, each loop 218 may be paired with a field concentrator 222 , or more than two loops may be coupled to a field concentrator 222 .
- the field concentrator 222 focuses the magnetic field produced by each conductive coil 210 toward the plasma generation area of the processing chamber, minimizing magnetic energy projecting away from the plasma generation area.
- Each field concentrator 222 generally comprises ferrite or other magnetically susceptible or magnetizable materials, such as low coercivity materials. Thermal control of the conductive coil 210 minimizes temperature variation of the field concentrator 222 , maintaining the magnetic properties thereof for control of the magnetic field produced by the conductive coil 210 .
- the inductive coils 210 are interposed within the gas distribution members 214 that nest with the insulating members 216 and cooperatively define the channels 212 .
- Conductive members 226 may also be interposed with the inductive coils 210 and the gas distribution members 214 .
- the conductive members 226 are rings that comprise metal, metal alloy, or metal mixtures, each of which may be attached to a support member 228 .
- the insulating members 216 fit between the conductive members 226 and the gas distribution members 214 to provide the channel 212 in a substantially coplanar configuration with the conductive members 214 and 226 , such that the inductive coils 210 are substantially coplanar with the conductive members 214 and 226 .
- the support member 228 is generally also conductive. In some embodiments, the support member 228 is a metal block.
- the support member 228 has recesses 230 that, together with the conductive members 226 , define capture spaces 232 into which respective shoulder portions 234 of each insulating member 216 are captured to secure the insulating members 216 into the lid assembly 200 .
- the conductive members 214 and 226 allow for a large grounded surface to be brought into close proximity to the plasma, enabling higher bias voltage to be used on the substrate support at lower power levels and lower heat input ( FIG. 1 ).
- the lid assembly configuration of FIG. 2 also brings the plasma source energy of the inductive coils 210 into close proximity with gas in the processing region, resulting in higher plasma density at lower power levels. Use of multiple inductive coils such as the inductive coils 210 also enables tuning of the plasma profile generated in the chamber by adjusting the power level applied to each individual coil.
- the support member 228 comprises one or more conduits 236 that bring process gases to the conductive gas distribution members 214 .
- the conductive gas distribution members 214 may comprise conduits (not shown) to disperse gas from the conduit 236 around the circumference of the gas distribution member 214 for even gas distribution.
- the apparatus 200 may be used as both a plasma source and a showerhead. Gas flow is distributed evenly across the face of the apparatus, and RF power is close-coupled to the process gas exiting the various openings.
- Thermal control may be enhanced by optionally including thermal control conduits 240 in the support member 228 . Locating thermal control conduits in the support member 228 may enhance thermal control of the field concentrators 222 , which are otherwise at least partially insulated from any thermal control fluid circulating through the loops 218 by the isolators 220 . Thermal control in the vicinity of the field concentrators 222 may be advantageous for maintaining electromagnetic properties of the field concentrators 222 . Also optionally, a cushion 238 may be disposed between the field concentrators 222 and the support member 228 to avoid any damage to the field concentrators 222 , which may be easily damaged by direct contact with the metal surface of the support member 228 .
- the cushion 238 may be a thermally conductive material such as Grafoil®, which is a flexible graphitic sealing material manufactured by Natural Graphite Operations, of Lakewood, Ohio, a subsidiary of GrafTech International, and distributed by Leader Global Technologies, of Deer Park, Tex.
- Grafoil® is a flexible graphitic sealing material manufactured by Natural Graphite Operations, of Lakewood, Ohio, a subsidiary of GrafTech International, and distributed by Leader Global Technologies, of Deer Park, Tex.
- the lid assembly 200 may have any convenient shape or size for processing substrates of any dimension.
- the lid assembly 200 may be circular, rectangular, or any polygonal shape.
- the lid assembly 200 may be of a size and shape adapted for processing semiconductor wafers for making semiconductor chips of any description, or the lid assembly 200 may be of a size and shape adapted for processing semiconductor panels such as large-area display or solar panels.
- Other types of substrates, such as LED substrates or magnetic media substrates, may also be processed using a lid assembly as herein described.
- the conductive coil (or coils) 210 may be disposed in a concentric circular shape, in a concentric non-circular (rectangular, polygonal, square, or irregular) shape, or in a non-concentric shape such as a boustrophedonic or zig-zag pattern. In another non-concentric embodiment, the conductive coil (or coils) 210 may be disposed in a spiral pattern.
- a lid assembly may be similar to the lid assembly 200 of FIG. 2 , with some differences.
- the lid assembly may have a curved surface facing the substrate support, curved in a convex or concave sense.
- the entire plasma source may be curved (i.e. the surface of the plasma source facing the substrate support and the surface facing away from the substrate support are both convex or concave).
- only the surface of the lid assembly facing the substrate support may be curved.
- multiple showerheads may be provided, especially for large area lid assemblies.
- gas may be injected through the conductive members 226 by providing one or more conduits through the support member 228 .
- conductive coils may be provided that comprise a single electrical circuit, rather than multiple discrete circuits.
- the conductive coil may be arranged in a planar, circular or rectangular spiral shape nested with, or disposed in, a complementary conductive member such that the conductive member and the conductive coil form a substantially planar plasma source.
- Such a spiral shape may also be z-displaced such that the plasma source is not planar, but has a z-dimension in a convex or concave sense.
- FIG. 3 is an exploded view of a lid assembly 300 according to another embodiment.
- the lid assembly 300 is similar in most respects to the lid assembly 200 of FIG. 2 , and identical features are labeled with the same identifying labels.
- the lid assembly 300 comprises a conduit 206 for delivering gas to the process region of the chamber on which the lid assembly 300 is installed.
- the lid assembly 300 further comprises a first RF coil 302 and a second RF coil 304 similar to the first RF coil, with the first RF coil 302 shown in exploded format.
- the first RF coil 302 comprises a plurality of conductors 306 disposed in an insulating channel 308 .
- FIG. 3 is an exploded view of a lid assembly 300 according to another embodiment.
- the lid assembly 300 is similar in most respects to the lid assembly 200 of FIG. 2 , and identical features are labeled with the same identifying labels.
- the lid assembly 300 comprises a conduit 206 for delivering gas to the process region of the chamber on which the lid assembly 300
- the conductors 306 are circular and concentric, but in alternate embodiments the conductors 306 may be disposed in any convenient configuration, as described herein.
- Each of the conductors 306 has a contact 310 for supplying power to the conductor 306 .
- the conductors 306 may be conductive tubes configured to carry a coolant in addition to electric power.
- the contacts 310 may also be used to provide coolant to the conductors 306 .
- the conductors 306 are generally metal, or other electrically conductive material.
- the metal may be a single metal, an alloy, a mixture, or another combination of metals.
- the conductors 306 may also be coated with a non-conductive material, such as ceramic or polymer, in some embodiments.
- the conductors 306 are copper tubes plated with silver.
- the metals to be used generally depend on the electrical and thermal properties needed for the particular embodiment. In high power applications, higher electrical conductivity will generally result in lower thermal budget, so more conductive materials may be advantageous. It should be noted that when multiple RF coils are used, each of the coils may have a different composition. For example, silver plated copper tubes may have different thicknesses of silver plating or different tube wall thicknesses to provide differential conductivity among the tubes. In other embodiments, each RF coil may have only one conductor, or more than two conductors.
- An insulator 312 is disposed over the conductors 306 so that the conductors 306 are surrounded by insulative material. This prevents electric power from flowing to the conductive rings 314 and 316 interposed between the first and second RF coils 302 and 304 .
- the insulator 312 comprises a wall that is not visible in the top-perspective view of FIG. 3 . The wall extends between the two conductors 306 to prevent electrical cross-talk between the conductors 306 in a given RF coil 302 or 304 . Thus, each conductor 306 is surrounded by insulative material. When power is provided to the conductors 306 , a magnetic field is generated by the conductors 306 .
- a field concentrator 318 is disposed partially around the conductors 306 to focus and direct the magnetic field in the direction of the processing zone for improved efficiency.
- the insulator 312 further comprises a passage 320 for each contact 310 .
- the passages 320 pass through openings in the field concentrator 318 to provide a pathway for the contacts 310 to be coupled to electric power while preventing electrical contact between the contacts 310 and the field concentrator 318 .
- the contacts protrude through the field concentrator 318 , where they may be coupled to an RF source.
- any number of RF coils may be disposed in the lid assembly 300 .
- Process gases may also be provided through the conductive rings 314 and 316 , in addition to or in place of the conduit 206 , by providing conduits in the conductive rings 314 and 316 with openings to release process gases into the processing zone.
- the lid assembly 300 may also be formed with a curvature according to any of the embodiments described herein.
- Embodiments disclosed herein also provide a method of processing a substrate on a substrate support in a process chamber.
- a plasma source may be provided in a position facing the substrate support to form a plasma for processing the substrate.
- the method comprises providing a plasma source that has a plurality of conductive loops disposed in an electrode, providing a processing gas to the chamber, grounding the electrode, and forming a plasma from the processing gas by applying power to the conductive loops.
- the conductive loops may be electrically insulated from the electrode by coating, wrapping, or situating the loops in an electrically insulating material, which may be a container, such as a channel formed in the electrode, a coating applied to the conductive loops, or a liner disposed inside a channel formed in the electrode.
- RF power is applied to the loops, and may be controlled independently to shape the plasma density in the process chamber.
- the conductive loops may be thermally controlled, if desired, by circulating a thermal control medium, such as a cooling fluid, through tubular conductive loops.
- the conductive loops may be substantially coplanar with the electrode in some embodiments.
- the electrode may be non-planar, with conductive loops disposed therein.
- the conductive loops may be partially disposed in the electrode and partially disposed outside the electrode, with any portions of the conductive loops disposed outside the electrode contained or encapsulated in an insulating material.
- the plasma may be further enhanced by providing a field concentrator disposed to concentrate the field inside the plasma region of the processing chamber.
- the field concentrator may generally be disposed opposite the substrate support, such that the conductive loops are between the field concentrator and the substrate support. Such positioning prevents development of magnetic field lines outside the chamber, and focuses the plasma source energy in the processing gas.
Abstract
A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.
Description
- Embodiments described herein generally relate to manufacturing semiconductor devices. More specifically, embodiments described herein relate to methods and apparatus for plasma processing of substrates.
- Plasma processing is commonly used for many semiconductor fabrication processes for manufacturing integrated circuits, flat-panel displays, magnetic media, and other devices. A plasma, or ionized gas, is generated inside a processing chamber by application of an electromagnetic field to a low-pressure gas in the chamber, and then applied to a workpiece to accomplish a process such as deposition, etching, or implantation. The plasma may also be generated outside the chamber and then directed into the chamber under pressure to increase the ratio of radicals to ions in the plasma for processes needing such treatments.
- Plasma may be generated by electric fields, by magnetic fields, or by electromagnetic fields. Plasma generated by an electric field normally uses spaced-apart electrodes to generate the electric field in the space occupied by the gas. The electric field ionizes the gas, and the resulting ions and electrons move toward one electrode or the other under the influence of the electric field. The electric field can impart very high energies to ions impinging on the workpiece, which can sputter material from the workpiece, damaging the workpiece and creating potentially contaminating particles in the chamber. Additionally, the high potentials accompanying such plasmas may create unwanted electrical discharges and parasitic currents.
- Inductively coupled plasmas are used in many circumstances to avoid some effects of capacitively coupled plasmas. An inductive coil is disposed adjacent to a plasma generating region of a processing chamber. The inductive coil projects a magnetic field into the chamber to ionize a gas inside the chamber. The inductive coil is frequently located outside the chamber, projecting the magnetic field into the chamber through a dielectric window. The inductive coil is frequently driven by high-frequency electromagnetic energy, which suffers power losses that rise faster than the voltage applied to the inductive coil. Thus, strong coupling of the plasma source with the plasma inside the chamber decreases power losses. Control of plasma uniformity is also improved by strong coupling between the plasma source and the plasma.
- As device geometry in the various semiconductor industries continues to decline, process uniformity in general and plasma uniformity in particular, becomes increasingly helpful for reliable manufacture of devices. Thus, there is a continuing need for inductive plasma processing apparatus and methods.
- Embodiments described herein provide a lid assembly for a plasma chamber, the lid assembly having a first annular inductive coil nested with a first conductive ring.
- Other embodiments provide a processing chamber for a semiconductor substrate, the processing chamber having a chamber body that definines an interior region, a substrate support disposed in the interior region, and a lid assembly disposed in the interior region facing the substrate support, the lid assembly having a gas distributor and a plasma source with a first conductive surface that faces the substrate support, a second conductive surface that faces away from the substrate support, and a plurality of conductive coils disposed in the conductive plasma source between the first surface and the second surface.
- Other embodiments provide a method of processing a substrate by disposing the substrate on a substrate support in a processing chamber, providing a plasma source facing the substrate support, the plasma source comprising a plurality of conductive loops disposed in an electrode, to define a processing region between the plasma source and the substrate support, providing a gas mixture to the processing region, grounding the electrode, and forming a plasma from the gas mixture by applying electric power to the conductive loops.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a schematic cross-sectional view of a processing chamber according to one embodiment. -
FIG. 2 is a schematic cross-sectional view of a gas distributor according to another embodiment. -
FIG. 3 is an exploded view of a gas distributor according to another embodiment. -
FIG. 1 is a schematic cross-sectional diagram of aprocessing chamber 100 according to one embodiment. Theprocessing chamber 100 comprises achamber body 102, asubstrate support 104, and agas distributor 106 facing thesubstrate support 104, which cooperatively define aprocessing region 118. Thegas distributor 106 comprises ashowerhead 108 and aplasma source 110 surrounding theshowerhead 108. Theplasma source 110 comprises aconductive spacer 114 and aconductive coil 112 disposed inside theconductive spacer 114. There may be one or moreconductive coils 112 disposed in theconductive spacer 114. Theconductive spacer 114 may be a disk-like member with channels or conduits housing theconductive coils 112. Alternately, theconductive spacer 114 may be a plurality of rings separating theconductive coils 112 and nesting with theconductive coils 112. Each of theconductive coils 112 is housed in a channel or recess 116 lined with an insulating material. The insulating material of the channel or recess 116 prevents electric current travelling from theconductive coils 112 into theconductive spacer 114. Theconductive coils 112 produce a magnetic field in theprocessing region 118 that ionizes a processing gas disposed therein to form a plasma. In some embodiments, theconductive coil 112 may be a coil assembly featuring a removable insulating member, as further described below in connection withFIG. 2 . - The
conductive spacer 114 provides a large surface area grounded electrode that faces thesubstrate support 104. The large grounded electrode allows generation of higher voltages at the substrate support using lower power levels. Disposing theconductive coils 112 in theconductive spacer 114 also brings the plasma source close to the plasma generation area of theprocessing region 118, improving coupling efficiency with the plasma. Additionally, the large grounded surface area of theconductive spacer 114 reduces plasma sheath voltage in the chamber, which reduces sputtering of chamber walls and chamber lid components, reducing contamination of workpieces disposed on the substrate support. Use of multipleconductive coils 112 also provides the possibility of using different power levels on the coils to tune the plasma profile in theprocessing region 118. -
FIG. 2 is a schematic cross-sectional diagram of alid assembly 200 according to another embodiment. Similar to thegas distributor 106 ofFIG. 1 , thelid assembly 200 comprises ashowerhead 202 and aplasma source 204. Agas conduit 206 connects a gas source (not shown) to theshowerhead 202, placing the gas source in fluid communication with a processing chamber throughopenings 208 in theshowerhead 202. - The
plasma source 204 comprises aconductive coil 210 disposed in achannel 212 formed between conductivegas distribution members 214. Thegas distribution members 214 may be metal or metal alloy, and may be coated with a dielectric material, if desired, or a chemically resistant or plasma resistant material, such as yttria, in some embodiments. Theconductive coil 210, of which there may be more than one, may also be metal, metal alloy, or a conductive composite such as a metal coated dielectric or a metal composite featuring metals having different conductivities. Material selection for theconductive coil 210 generally depends on the desired thermal and electrical conductivity. Materials with lower electrical conductivity are generally lower in cost, but a conductive coil made from low conductivity materials may generate unwanted heat, and may require excessive power to operate. Highly conductive materials such as copper and silver may be used proficiently for a conductive coil. Less conductive and lower cost materials such as aluminum, zinc, or nickel may be included as alloy or layer components. - Heat may be dissipated by forming the
conductive coil 210 with a conduit for a thermal control medium, which may be a cooling liquid such as water or a cooling gas such as nitrogen. Theconductive coil 210 may be an annular or torroidal tube in some embodiments. The tube wall thickness may be specified based on thermal and electrical conductivity needed. Cooling may be useful when high power, for example greater than about 500 W, is to be applied to theconductive coil 210. In one embodiment, a conductive coil is a torroidal tube comprising a layer of copper and a layer of silver. - The
channel 212 is generally lined with aninsulating member 216, which may be ceramic or plastic, Teflon, for example. The insulatingmember 216 confines the electric current to theconductive coil 210. The insulating material may be an insert that fits into thechannel 212, or in other embodiments, may be a liner adhered to the inner surface of thechannel 212. The embodiment ofFIG. 2 features two insulatingmembers 216, each of which is an annular member that fits inside a respective channel, one of the insulatingmembers 216 fitting inside theinnermost channel 212, which is a first channel in the embodiment ofFIG. 2 , and the other insulatingmember 216 fitting inside theoutermost channel 212, which is a second channel in the embodiment ofFIG. 2 . Each of thechannels 212 has aconductive coil 210 disposed therein. In the embodiment ofFIG. 2 , each conductive coil comprises twoconductive loops 218. A pair ofconductive loops 218 rest inside the recesses formed by the respective insulatingmembers 216. - The two
conductive loops 218 are electrically isolated, one from the other, byrespective isolators 220, which serve to surround eachconductive loop 218. In the embodiment ofFIG. 2 , eachisolator 220 is an annular dielectric member having arecess 224 into which aconductive loop 218 fits. Therecess 224 of anisolator 220 and thechannel 212 into which theisolator 220 fits generally face in opposite directions. Thus, each conductive loop is surrounded on three sides by anisolator 220 and on one side by an insulatingmember 216. It should be noted that theisolators 220 may have any convenient cross sectional shape. For example, in an alternate embodiment, theisolators 220 may be rounded to follow the contours of a rounded, tube-like,conductive loop 218, such that therecess 224 has a rounded cross-sectional shape. In another embodiment, the cross-sectional profile of each isolator 220 and/or eachrecess 224 may be rectangular with beveled corners. In still other embodiments, theconductive loops 218 may be formed with a coating that isolates the loop. Theisolators 220 may be any insulating material, such as ceramic, glass, or plastic. In the embodiment ofFIG. 2 , eachisolator 220 is shown as a single piece covering a singleconductive loop 218, but in alternate embodiments, an isolator may be formed to cover two neighboringconductive loops 218 while disposing a wall between them. - A
field concentrator 222 is disposed around eachconductive coil 210 to amplify the magnetic field produced by eachconductive coil 210. In the embodiment ofFIG. 2 , theconcentrator 222 is disposed around a pair ofconductive loops 218 and theirrespective isolators 220, but in other embodiments, eachloop 218 may be paired with afield concentrator 222, or more than two loops may be coupled to afield concentrator 222. Thefield concentrator 222 focuses the magnetic field produced by eachconductive coil 210 toward the plasma generation area of the processing chamber, minimizing magnetic energy projecting away from the plasma generation area. Eachfield concentrator 222 generally comprises ferrite or other magnetically susceptible or magnetizable materials, such as low coercivity materials. Thermal control of theconductive coil 210 minimizes temperature variation of thefield concentrator 222, maintaining the magnetic properties thereof for control of the magnetic field produced by theconductive coil 210. - The
inductive coils 210 are interposed within thegas distribution members 214 that nest with the insulatingmembers 216 and cooperatively define thechannels 212.Conductive members 226 may also be interposed with theinductive coils 210 and thegas distribution members 214. In one embodiment, theconductive members 226 are rings that comprise metal, metal alloy, or metal mixtures, each of which may be attached to asupport member 228. The insulatingmembers 216 fit between theconductive members 226 and thegas distribution members 214 to provide thechannel 212 in a substantially coplanar configuration with theconductive members inductive coils 210 are substantially coplanar with theconductive members - The
support member 228 is generally also conductive. In some embodiments, thesupport member 228 is a metal block. Thesupport member 228 hasrecesses 230 that, together with theconductive members 226, definecapture spaces 232 into whichrespective shoulder portions 234 of each insulatingmember 216 are captured to secure the insulatingmembers 216 into thelid assembly 200. Theconductive members FIG. 1 ). The lid assembly configuration ofFIG. 2 also brings the plasma source energy of theinductive coils 210 into close proximity with gas in the processing region, resulting in higher plasma density at lower power levels. Use of multiple inductive coils such as theinductive coils 210 also enables tuning of the plasma profile generated in the chamber by adjusting the power level applied to each individual coil. - The
support member 228 comprises one ormore conduits 236 that bring process gases to the conductivegas distribution members 214. Additionally, in some embodiments, the conductivegas distribution members 214 may comprise conduits (not shown) to disperse gas from theconduit 236 around the circumference of thegas distribution member 214 for even gas distribution. By interposing conductivegas distribution members 214 withinductive coils 210, theapparatus 200 may be used as both a plasma source and a showerhead. Gas flow is distributed evenly across the face of the apparatus, and RF power is close-coupled to the process gas exiting the various openings. - Thermal control may be enhanced by optionally including
thermal control conduits 240 in thesupport member 228. Locating thermal control conduits in thesupport member 228 may enhance thermal control of thefield concentrators 222, which are otherwise at least partially insulated from any thermal control fluid circulating through theloops 218 by theisolators 220. Thermal control in the vicinity of thefield concentrators 222 may be advantageous for maintaining electromagnetic properties of thefield concentrators 222. Also optionally, acushion 238 may be disposed between thefield concentrators 222 and thesupport member 228 to avoid any damage to thefield concentrators 222, which may be easily damaged by direct contact with the metal surface of thesupport member 228. Thecushion 238 may be a thermally conductive material such as Grafoil®, which is a flexible graphitic sealing material manufactured by Natural Graphite Operations, of Lakewood, Ohio, a subsidiary of GrafTech International, and distributed by Leader Global Technologies, of Deer Park, Tex. - In general, the
lid assembly 200 may have any convenient shape or size for processing substrates of any dimension. Thelid assembly 200 may be circular, rectangular, or any polygonal shape. Thelid assembly 200 may be of a size and shape adapted for processing semiconductor wafers for making semiconductor chips of any description, or thelid assembly 200 may be of a size and shape adapted for processing semiconductor panels such as large-area display or solar panels. Other types of substrates, such as LED substrates or magnetic media substrates, may also be processed using a lid assembly as herein described. In some embodiments, the conductive coil (or coils) 210 may be disposed in a concentric circular shape, in a concentric non-circular (rectangular, polygonal, square, or irregular) shape, or in a non-concentric shape such as a boustrophedonic or zig-zag pattern. In another non-concentric embodiment, the conductive coil (or coils) 210 may be disposed in a spiral pattern. - In some embodiments, a lid assembly may be similar to the
lid assembly 200 ofFIG. 2 , with some differences. In one embodiment, the lid assembly may have a curved surface facing the substrate support, curved in a convex or concave sense. In one aspect, the entire plasma source may be curved (i.e. the surface of the plasma source facing the substrate support and the surface facing away from the substrate support are both convex or concave). In another aspect, only the surface of the lid assembly facing the substrate support may be curved. In one embodiment, multiple showerheads may be provided, especially for large area lid assemblies. In one embodiment, gas may be injected through theconductive members 226 by providing one or more conduits through thesupport member 228. In other embodiments, conductive coils may be provided that comprise a single electrical circuit, rather than multiple discrete circuits. For example, in one embodiment, the conductive coil may be arranged in a planar, circular or rectangular spiral shape nested with, or disposed in, a complementary conductive member such that the conductive member and the conductive coil form a substantially planar plasma source. Such a spiral shape may also be z-displaced such that the plasma source is not planar, but has a z-dimension in a convex or concave sense. -
FIG. 3 is an exploded view of alid assembly 300 according to another embodiment. Thelid assembly 300 is similar in most respects to thelid assembly 200 ofFIG. 2 , and identical features are labeled with the same identifying labels. Thelid assembly 300 comprises aconduit 206 for delivering gas to the process region of the chamber on which thelid assembly 300 is installed. Thelid assembly 300 further comprises afirst RF coil 302 and asecond RF coil 304 similar to the first RF coil, with thefirst RF coil 302 shown in exploded format. Thefirst RF coil 302 comprises a plurality ofconductors 306 disposed in an insulatingchannel 308. In the embodiment ofFIG. 3 , theconductors 306 are circular and concentric, but in alternate embodiments theconductors 306 may be disposed in any convenient configuration, as described herein. Each of theconductors 306 has acontact 310 for supplying power to theconductor 306. As described elsewhere herein, theconductors 306 may be conductive tubes configured to carry a coolant in addition to electric power. Thus, thecontacts 310 may also be used to provide coolant to theconductors 306. - The
conductors 306 are generally metal, or other electrically conductive material. The metal may be a single metal, an alloy, a mixture, or another combination of metals. Theconductors 306 may also be coated with a non-conductive material, such as ceramic or polymer, in some embodiments. In one embodiment, theconductors 306 are copper tubes plated with silver. The metals to be used generally depend on the electrical and thermal properties needed for the particular embodiment. In high power applications, higher electrical conductivity will generally result in lower thermal budget, so more conductive materials may be advantageous. It should be noted that when multiple RF coils are used, each of the coils may have a different composition. For example, silver plated copper tubes may have different thicknesses of silver plating or different tube wall thicknesses to provide differential conductivity among the tubes. In other embodiments, each RF coil may have only one conductor, or more than two conductors. - An
insulator 312 is disposed over theconductors 306 so that theconductors 306 are surrounded by insulative material. This prevents electric power from flowing to theconductive rings insulator 312 comprises a wall that is not visible in the top-perspective view ofFIG. 3 . The wall extends between the twoconductors 306 to prevent electrical cross-talk between theconductors 306 in a givenRF coil conductor 306 is surrounded by insulative material. When power is provided to theconductors 306, a magnetic field is generated by theconductors 306. Afield concentrator 318 is disposed partially around theconductors 306 to focus and direct the magnetic field in the direction of the processing zone for improved efficiency. - The
insulator 312 further comprises apassage 320 for eachcontact 310. Thepassages 320 pass through openings in thefield concentrator 318 to provide a pathway for thecontacts 310 to be coupled to electric power while preventing electrical contact between thecontacts 310 and thefield concentrator 318. The contacts protrude through thefield concentrator 318, where they may be coupled to an RF source. - As with the embodiment of
FIG. 2 , any number of RF coils may be disposed in thelid assembly 300. Process gases may also be provided through theconductive rings conduit 206, by providing conduits in theconductive rings lid assembly 300 may also be formed with a curvature according to any of the embodiments described herein. - Embodiments disclosed herein also provide a method of processing a substrate on a substrate support in a process chamber. A plasma source may be provided in a position facing the substrate support to form a plasma for processing the substrate. The method comprises providing a plasma source that has a plurality of conductive loops disposed in an electrode, providing a processing gas to the chamber, grounding the electrode, and forming a plasma from the processing gas by applying power to the conductive loops. The conductive loops may be electrically insulated from the electrode by coating, wrapping, or situating the loops in an electrically insulating material, which may be a container, such as a channel formed in the electrode, a coating applied to the conductive loops, or a liner disposed inside a channel formed in the electrode. RF power is applied to the loops, and may be controlled independently to shape the plasma density in the process chamber. The conductive loops may be thermally controlled, if desired, by circulating a thermal control medium, such as a cooling fluid, through tubular conductive loops.
- The conductive loops may be substantially coplanar with the electrode in some embodiments. In other embodiments, the electrode may be non-planar, with conductive loops disposed therein. In still other embodiments, the conductive loops may be partially disposed in the electrode and partially disposed outside the electrode, with any portions of the conductive loops disposed outside the electrode contained or encapsulated in an insulating material.
- The plasma may be further enhanced by providing a field concentrator disposed to concentrate the field inside the plasma region of the processing chamber. For example, the field concentrator may generally be disposed opposite the substrate support, such that the conductive loops are between the field concentrator and the substrate support. Such positioning prevents development of magnetic field lines outside the chamber, and focuses the plasma source energy in the processing gas.
- While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (24)
1. A lid assembly for a plasma chamber, comprising:
a first annular inductive coil nested with a first conductive ring.
2. The lid assembly of claim 1 , wherein the first annular inductive coil is disposed in an insulating channel nested with the first conductive ring.
3. The lid assembly of claim 2 , further comprising a field concentrator disposed around the first annular inductive coil inside the insulating channel.
4. The lid assembly of claim 3 , further comprising a second annular inductive coil disposed in a second insulating channel nested with the first conductive ring.
5. The lid assembly of claim 4 , wherein the first and second annular inductive coils and the first conductive ring are arranged concentrically.
6. The lid assembly of claim 4 , wherein the first and second annular inductive coils each comprise a metal tube.
7. The lid assembly of claim 6 , wherein the first annular inductive coil is nested in a central opening of the conductive ring and the second annular inductive coil is nested about a peripheral edge of the conductive ring.
8. A lid assembly for a plasma chamber, comprising:
a gas distributor;
a support plate disposed around the gas distributor;
a conductive ring disposed around the gas distributor and coupled to the support plate;
an annular inductive coil disposed in an insulating channel nested with the conductive ring; and
a field concentrator disposed in the insulating channel around the inductive coil.
9. The lid assembly of claim 8 , wherein the insulating channel is concentrically disposed in a central opening of the conductive ring, has an opening that faces the support plate, and has an extension over an inner edge of the conductive ring.
10. The lid assembly of claim 9 , wherein the support plate is conductive and is electrically coupled to the conductive ring.
11. The lid assembly of claim 8 , wherein the gas distributor is coupled to a conduit through a central aperture of the support plate, the conductive ring, and the annular inductive coil, the support plate is electrically coupled to the conductive ring, the annular conductive coil is electrically insulated from the support plate and the conductive ring, and the annular conductive coil is substantially coplanar with the conductive ring.
12. The lid assembly of claim 8 , further comprising an isolator disposed in the insulating channel, the isolator having a channel into which the annular inductive coil fits.
13. The lid assembly of claim 12 , wherein the annular inductive coil is substantially coplanar with the conductive ring.
14. The lid assembly of claim 13 , wherein the annular inductive coil comprises a conduit for a thermal control medium.
15. A processing chamber for a semiconductor substrate, comprising:
a chamber body defining an interior region;
a substrate support disposed in the interior region; and
a lid assembly disposed in the interior region facing the substrate support, the lid assembly comprising:
a gas distributor; and
a plasma source having a first conductive surface that faces the substrate support, a second conductive surface that faces away from the substrate support, and a plurality of conductive coils disposed in the conductive plasma source between the first surface and the second surface.
16. The processing chamber of claim 15 , wherein each the conductive coils is disposed in a conduit formed in the conductive plasma source, and the conduit is lined with an insulating material.
17. The processing chamber of claim 16 , wherein a magnetic field concentrator is disposed within the conduit.
18. The processing chamber of claim 17 , wherein each conductive coil is formed with an internal pathway for a thermal control medium.
19. The processing chamber of claim 18 , wherein each conductive coil comprises a plurality of conductive loops separated by insulators.
20. A method of processing a substrate, comprising:
disposing the substrate on a substrate support in a processing chamber;
providing a plasma source facing the substrate support, the plasma source comprising a plurality of conductive loops disposed in an electrode, to define a processing region between the plasma source and the substrate support;
providing a gas mixture to the processing region;
grounding the electrode; and
forming a plasma from the gas mixture by applying electric power to the conductive loops.
21. The method of claim 20 , further comprising tuning the plasma profile by applying different power levels to the conductive loops.
22. The method of claim 21 , further comprising circulating a cooling medium through the conductive loops.
23. The method of claim 22 , wherein the gas mixture is provided to the processing region through an aperture in a central portion of the plasma source.
24. The method of claim 22 , wherein the gas mixture is provided to the processing region through a plurality of apertures in the plasma source.
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/780,531 US20110278260A1 (en) | 2010-05-14 | 2010-05-14 | Inductive plasma source with metallic shower head using b-field concentrator |
CN201180024010.3A CN102893705B (en) | 2010-05-14 | 2011-04-25 | Inductive plasma source with metallic shower head using b-field concentrator |
JP2013511173A JP2013533575A (en) | 2010-05-14 | 2011-04-25 | Inductive plasma source with metal showerhead using B field concentrator |
TW100114321A TWI520169B (en) | 2010-05-14 | 2011-04-25 | Inductive plasma source with metallic shower head using b-field concentrator |
PCT/US2011/033735 WO2011142957A2 (en) | 2010-05-14 | 2011-04-25 | Inductive plasma source with metallic shower head using b-field concentrator |
KR1020127032671A KR101826843B1 (en) | 2010-05-14 | 2011-04-25 | Inductive plasma source with metallic shower head using b-field concentrator |
JP2016002248A JP2016122654A (en) | 2010-05-14 | 2016-01-08 | Inductive plasma source with metallic shower head using b-field concentrator |
US15/462,507 US10529541B2 (en) | 2010-05-14 | 2017-03-17 | Inductive plasma source with metallic shower head using B-field concentrator |
US16/735,494 US11450509B2 (en) | 2010-05-14 | 2020-01-06 | Inductive plasma source with metallic shower head using b-field concentrator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/780,531 US20110278260A1 (en) | 2010-05-14 | 2010-05-14 | Inductive plasma source with metallic shower head using b-field concentrator |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/462,507 Continuation US10529541B2 (en) | 2010-05-14 | 2017-03-17 | Inductive plasma source with metallic shower head using B-field concentrator |
Publications (1)
Publication Number | Publication Date |
---|---|
US20110278260A1 true US20110278260A1 (en) | 2011-11-17 |
Family
ID=44910845
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/780,531 Abandoned US20110278260A1 (en) | 2010-05-14 | 2010-05-14 | Inductive plasma source with metallic shower head using b-field concentrator |
US15/462,507 Active 2031-06-10 US10529541B2 (en) | 2010-05-14 | 2017-03-17 | Inductive plasma source with metallic shower head using B-field concentrator |
US16/735,494 Active 2030-10-18 US11450509B2 (en) | 2010-05-14 | 2020-01-06 | Inductive plasma source with metallic shower head using b-field concentrator |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/462,507 Active 2031-06-10 US10529541B2 (en) | 2010-05-14 | 2017-03-17 | Inductive plasma source with metallic shower head using B-field concentrator |
US16/735,494 Active 2030-10-18 US11450509B2 (en) | 2010-05-14 | 2020-01-06 | Inductive plasma source with metallic shower head using b-field concentrator |
Country Status (6)
Country | Link |
---|---|
US (3) | US20110278260A1 (en) |
JP (2) | JP2013533575A (en) |
KR (1) | KR101826843B1 (en) |
CN (1) | CN102893705B (en) |
TW (1) | TWI520169B (en) |
WO (1) | WO2011142957A2 (en) |
Cited By (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120103523A1 (en) * | 2010-10-27 | 2012-05-03 | Tokyo Electron Limited | Plasma processing apparatus |
US20130105086A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
US20160225590A1 (en) * | 2015-01-30 | 2016-08-04 | Applied Materials, Inc. | Magnet configurations for radial uniformity tuning of icp plasmas |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9934942B1 (en) * | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US20180096819A1 (en) * | 2016-10-04 | 2018-04-05 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9953888B1 (en) * | 2016-12-15 | 2018-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electromagnetic detection device and semiconductor manufacturing system |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10186428B2 (en) | 2016-11-11 | 2019-01-22 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10424460B2 (en) * | 2010-08-06 | 2019-09-24 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US20190295826A1 (en) * | 2010-10-15 | 2019-09-26 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11094508B2 (en) * | 2018-12-14 | 2021-08-17 | Applied Materials, Inc. | Film stress control for plasma enhanced chemical vapor deposition |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US20220044864A1 (en) * | 2018-07-25 | 2022-02-10 | Lam Research Corporation | Magnetic shielding for plasma sources |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11495435B2 (en) * | 2019-05-17 | 2022-11-08 | Kokusai Electric Corporation | Substrate processing apparatus, non-transitory computer-readable recording medium, method of manufacturing semiconductor device, and a substrate processing method |
US20230049431A1 (en) * | 2020-04-09 | 2023-02-16 | Applied Materials, Inc. | Lid stack for high frequency processing |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110278260A1 (en) * | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Inductive plasma source with metallic shower head using b-field concentrator |
TWI596644B (en) * | 2012-03-22 | 2017-08-21 | 藍姆研究公司 | Fluid distribution member assembly for plasma processing apparatus |
TW201405627A (en) * | 2012-07-20 | 2014-02-01 | Applied Materials Inc | Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US10629415B2 (en) | 2017-03-28 | 2020-04-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrate |
CN108882494B (en) * | 2017-05-08 | 2022-06-17 | 北京北方华创微电子装备有限公司 | Plasma device |
US10424487B2 (en) | 2017-10-24 | 2019-09-24 | Applied Materials, Inc. | Atomic layer etching processes |
KR102560283B1 (en) | 2018-01-24 | 2023-07-26 | 삼성전자주식회사 | Apparatus and method for manufacturing and designing a shower head |
JP7221115B2 (en) * | 2019-04-03 | 2023-02-13 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
WO2022093273A1 (en) * | 2020-10-30 | 2022-05-05 | Applied Materials, Inc. | Rf delivery and feedthrough assembly to a processing chamber |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US6225746B1 (en) * | 1999-03-03 | 2001-05-01 | Anelva Corporation | Plasma processing system |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
US6259209B1 (en) * | 1996-09-27 | 2001-07-10 | Surface Technology Systems Limited | Plasma processing apparatus with coils in dielectric windows |
US20080050537A1 (en) * | 2006-08-22 | 2008-02-28 | Valery Godyak | Inductive plasma source with high coupling efficiency |
US20110204023A1 (en) * | 2010-02-22 | 2011-08-25 | No-Hyun Huh | Multi inductively coupled plasma reactor and method thereof |
US20120222618A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Dual plasma source, lamp heated plasma chamber |
US20130052830A1 (en) * | 2011-08-31 | 2013-02-28 | Gyoo-Dong Kim | Plasma reactor having dual inductively coupled plasma source |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
KR920003424A (en) * | 1990-07-13 | 1992-02-29 | 미다 가쓰시게 | Surface treatment apparatus, surface treatment method and manufacturing method of semiconductor device |
US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
EP0537950B1 (en) | 1991-10-17 | 1997-04-02 | Applied Materials, Inc. | Plasma reactor |
JPH05136094A (en) | 1991-11-11 | 1993-06-01 | Ramuko Kk | Plasma reactor |
US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
JP3399467B2 (en) * | 1993-08-19 | 2003-04-21 | 東京エレクトロン株式会社 | Plasma processing apparatus and cleaning method |
US5580385A (en) | 1994-06-30 | 1996-12-03 | Texas Instruments, Incorporated | Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber |
US5556521A (en) | 1995-03-24 | 1996-09-17 | Sony Corporation | Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source |
JPH08296037A (en) * | 1995-04-24 | 1996-11-12 | Sony Corp | Vapor-deposition device |
US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
JP3153768B2 (en) * | 1995-08-17 | 2001-04-09 | 東京エレクトロン株式会社 | Plasma processing equipment |
US6095084A (en) | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US5863376A (en) * | 1996-06-05 | 1999-01-26 | Lam Research Corporation | Temperature controlling method and apparatus for a plasma processing chamber |
US6534922B2 (en) * | 1996-09-27 | 2003-03-18 | Surface Technology Systems, Plc | Plasma processing apparatus |
JP4405496B2 (en) * | 1997-02-24 | 2010-01-27 | 株式会社エフオーアイ | Plasma processing equipment |
KR100469047B1 (en) * | 1997-04-11 | 2005-01-31 | 동경 엘렉트론 주식회사 | Processing System, Upper Electrode Unit and Method of Use of an Upper Electrode, and Electrode Unit and Method of Manufacturing the Electrode unit |
US6706334B1 (en) * | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
GB9714341D0 (en) * | 1997-07-09 | 1997-09-10 | Surface Tech Sys Ltd | Plasma processing apparatus |
US6076482A (en) | 1997-09-20 | 2000-06-20 | Applied Materials, Inc. | Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion |
US6197165B1 (en) | 1998-05-06 | 2001-03-06 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
JP4046207B2 (en) * | 1998-08-06 | 2008-02-13 | 株式会社エフオーアイ | Plasma processing equipment |
JP2002525866A (en) * | 1998-09-22 | 2002-08-13 | アプライド マテリアルズ インコーポレイテッド | RF plasma etching reactor with internal induction coil antenna and conductive chamber walls |
JP2000315598A (en) * | 1999-03-03 | 2000-11-14 | Anelva Corp | Plasma processing device |
US6392351B1 (en) | 1999-05-03 | 2002-05-21 | Evgeny V. Shun'ko | Inductive RF plasma source with external discharge bridge |
JP2000331993A (en) * | 1999-05-19 | 2000-11-30 | Mitsubishi Electric Corp | Plasma processing device |
TW445540B (en) * | 2000-08-07 | 2001-07-11 | Nano Architect Res Corp | Bundle concentrating type multi-chamber plasma reacting system |
US6417626B1 (en) * | 2001-03-01 | 2002-07-09 | Tokyo Electron Limited | Immersed inductively—coupled plasma source |
US6755150B2 (en) * | 2001-04-20 | 2004-06-29 | Applied Materials Inc. | Multi-core transformer plasma source |
AT502984B8 (en) * | 2003-09-15 | 2008-10-15 | Qasar Technologieentwicklung Gmbh | METHOD AND DEVICE FOR PRODUCING ALFVEN WAVES |
US20060075967A1 (en) | 2004-10-12 | 2006-04-13 | Applied Materials, Inc. | Magnetic-field concentration in inductively coupled plasma reactors |
US8608851B2 (en) * | 2005-10-14 | 2013-12-17 | Advanced Micro-Fabrication Equipment, Inc. Asia | Plasma confinement apparatus, and method for confining a plasma |
JP4528799B2 (en) * | 2006-07-31 | 2010-08-18 | 株式会社リガク | Total reflection X-ray fluorescence analyzer |
US8992725B2 (en) * | 2006-08-28 | 2015-03-31 | Mattson Technology, Inc. | Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil |
JP4906448B2 (en) * | 2006-09-11 | 2012-03-28 | 新明和工業株式会社 | Intermediate electrode unit of plasma gun and plasma gun including the same |
KR101281188B1 (en) | 2007-01-25 | 2013-07-02 | 최대규 | Inductively coupled plasma reactor |
JP4950763B2 (en) * | 2007-05-25 | 2012-06-13 | 大陽日酸株式会社 | Plasma generator |
US7976674B2 (en) | 2007-06-13 | 2011-07-12 | Tokyo Electron Limited | Embedded multi-inductive large area plasma source |
KR101358780B1 (en) * | 2007-07-20 | 2014-02-04 | 최대규 | Plasma reactor having inductively coupled plasma source with heater |
JP5139029B2 (en) * | 2007-10-24 | 2013-02-06 | ラム リサーチ コーポレーション | Plasma processing equipment |
KR100953828B1 (en) * | 2008-01-15 | 2010-04-20 | 주식회사 테스 | Plasma processing apparatus |
KR20090009369U (en) | 2008-03-14 | 2009-09-17 | 킴스핸들 주식회사 | Handle for cookware |
US20110278260A1 (en) * | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Inductive plasma source with metallic shower head using b-field concentrator |
-
2010
- 2010-05-14 US US12/780,531 patent/US20110278260A1/en not_active Abandoned
-
2011
- 2011-04-25 WO PCT/US2011/033735 patent/WO2011142957A2/en active Application Filing
- 2011-04-25 KR KR1020127032671A patent/KR101826843B1/en active IP Right Grant
- 2011-04-25 JP JP2013511173A patent/JP2013533575A/en active Pending
- 2011-04-25 TW TW100114321A patent/TWI520169B/en active
- 2011-04-25 CN CN201180024010.3A patent/CN102893705B/en active Active
-
2016
- 2016-01-08 JP JP2016002248A patent/JP2016122654A/en active Pending
-
2017
- 2017-03-17 US US15/462,507 patent/US10529541B2/en active Active
-
2020
- 2020-01-06 US US16/735,494 patent/US11450509B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US6259209B1 (en) * | 1996-09-27 | 2001-07-10 | Surface Technology Systems Limited | Plasma processing apparatus with coils in dielectric windows |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
US6225746B1 (en) * | 1999-03-03 | 2001-05-01 | Anelva Corporation | Plasma processing system |
US20080050537A1 (en) * | 2006-08-22 | 2008-02-28 | Valery Godyak | Inductive plasma source with high coupling efficiency |
US20110204023A1 (en) * | 2010-02-22 | 2011-08-25 | No-Hyun Huh | Multi inductively coupled plasma reactor and method thereof |
US20120222618A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Dual plasma source, lamp heated plasma chamber |
US20130052830A1 (en) * | 2011-08-31 | 2013-02-28 | Gyoo-Dong Kim | Plasma reactor having dual inductively coupled plasma source |
Cited By (126)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10424460B2 (en) * | 2010-08-06 | 2019-09-24 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US11488812B2 (en) * | 2010-10-15 | 2022-11-01 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US20190295826A1 (en) * | 2010-10-15 | 2019-09-26 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US20120103523A1 (en) * | 2010-10-27 | 2012-05-03 | Tokyo Electron Limited | Plasma processing apparatus |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US20130105086A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
US10271416B2 (en) * | 2011-10-28 | 2019-04-23 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10354843B2 (en) | 2012-09-21 | 2019-07-16 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US11024486B2 (en) | 2013-02-08 | 2021-06-01 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10796922B2 (en) | 2014-10-14 | 2020-10-06 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10707061B2 (en) | 2014-10-14 | 2020-07-07 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US10249479B2 (en) * | 2015-01-30 | 2019-04-02 | Applied Materials, Inc. | Magnet configurations for radial uniformity tuning of ICP plasmas |
US20160225590A1 (en) * | 2015-01-30 | 2016-08-04 | Applied Materials, Inc. | Magnet configurations for radial uniformity tuning of icp plasmas |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10607867B2 (en) | 2015-08-06 | 2020-03-31 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10424464B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US20190198291A1 (en) * | 2016-10-04 | 2019-06-27 | Applied Materials, Inc. | Chamber with flow-through source |
US9934942B1 (en) * | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10224180B2 (en) * | 2016-10-04 | 2019-03-05 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10541113B2 (en) * | 2016-10-04 | 2020-01-21 | Applied Materials, Inc. | Chamber with flow-through source |
US11049698B2 (en) * | 2016-10-04 | 2021-06-29 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US20180096819A1 (en) * | 2016-10-04 | 2018-04-05 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US10319603B2 (en) | 2016-10-07 | 2019-06-11 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10770346B2 (en) | 2016-11-11 | 2020-09-08 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10186428B2 (en) | 2016-11-11 | 2019-01-22 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US9953888B1 (en) * | 2016-12-15 | 2018-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electromagnetic detection device and semiconductor manufacturing system |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10529737B2 (en) | 2017-02-08 | 2020-01-07 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10325923B2 (en) | 2017-02-08 | 2019-06-18 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10593553B2 (en) | 2017-08-04 | 2020-03-17 | Applied Materials, Inc. | Germanium etching systems and methods |
US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10861676B2 (en) | 2018-01-08 | 2020-12-08 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10699921B2 (en) | 2018-02-15 | 2020-06-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US20220044864A1 (en) * | 2018-07-25 | 2022-02-10 | Lam Research Corporation | Magnetic shielding for plasma sources |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11094508B2 (en) * | 2018-12-14 | 2021-08-17 | Applied Materials, Inc. | Film stress control for plasma enhanced chemical vapor deposition |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11495435B2 (en) * | 2019-05-17 | 2022-11-08 | Kokusai Electric Corporation | Substrate processing apparatus, non-transitory computer-readable recording medium, method of manufacturing semiconductor device, and a substrate processing method |
US20230049431A1 (en) * | 2020-04-09 | 2023-02-16 | Applied Materials, Inc. | Lid stack for high frequency processing |
US11846011B2 (en) * | 2020-04-09 | 2023-12-19 | Applied Materials, Inc. | Lid stack for high frequency processing |
Also Published As
Publication number | Publication date |
---|---|
CN102893705B (en) | 2017-05-03 |
CN102893705A (en) | 2013-01-23 |
US20170194128A1 (en) | 2017-07-06 |
US10529541B2 (en) | 2020-01-07 |
US20200144027A1 (en) | 2020-05-07 |
JP2016122654A (en) | 2016-07-07 |
TW201145350A (en) | 2011-12-16 |
WO2011142957A2 (en) | 2011-11-17 |
US11450509B2 (en) | 2022-09-20 |
WO2011142957A3 (en) | 2012-02-23 |
KR20130079435A (en) | 2013-07-10 |
TWI520169B (en) | 2016-02-01 |
KR101826843B1 (en) | 2018-02-07 |
JP2013533575A (en) | 2013-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11450509B2 (en) | Inductive plasma source with metallic shower head using b-field concentrator | |
JP4216243B2 (en) | Helical resonator type plasma processing equipment | |
US20170236693A1 (en) | Rotatable substrate support having radio frequency applicator | |
KR100486712B1 (en) | Inductively coupled plasma generating apparatus with double layer coil antenna | |
US7273533B2 (en) | Plasma processing system with locally-efficient inductive plasma coupling | |
KR100797206B1 (en) | Uniform gas distribution in large area plasma source | |
US20080173237A1 (en) | Plasma Immersion Chamber | |
KR20040062846A (en) | Inductively coupled antenna and plasma processing apparatus using the same | |
JP2007317661A (en) | Plasma reactor | |
CN111095476B (en) | Cooled focus ring for plasma processing apparatus | |
KR20170035138A (en) | Plasma reactor for reducing particles | |
KR100793457B1 (en) | Plasma reactor having multi discharging chamber | |
KR102467296B1 (en) | Ignition of shielding structure | |
KR102384274B1 (en) | A cooling structure improvement of plasma reactor | |
KR102638030B1 (en) | Plasma processing apparatus, manufacturing method thereof, and plasma processing method | |
KR101281191B1 (en) | Inductively coupled plasma reactor capable |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LAI, CANFENG;TOBIN, JEFFREY;PORSHNEV, PETER I.;AND OTHERS;SIGNING DATES FROM 20100525 TO 20100601;REEL/FRAME:024647/0621 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION |