US20110287584A1 - Semiconductor package having side walls and method for manufacturing the same - Google Patents
Semiconductor package having side walls and method for manufacturing the same Download PDFInfo
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- US20110287584A1 US20110287584A1 US13/197,249 US201113197249A US2011287584A1 US 20110287584 A1 US20110287584 A1 US 20110287584A1 US 201113197249 A US201113197249 A US 201113197249A US 2011287584 A1 US2011287584 A1 US 2011287584A1
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- semiconductor chips
- insulation layer
- semiconductor
- bottom plate
- distribution line
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Definitions
- the present invention relates generally to a semiconductor package and a method for manufacturing the same, and more particularly to a semiconductor package having side walls formed around a semiconductor chip to increase the bonding area of the semiconductor chip package.
- Chip scale packages that are no more than about 100% to 105% of the size of semiconductor chips have been disclosed in the art.
- One such chip scale package is a wafer level package, which includes a semiconductor chip, bonding pads formed on the semiconductor chip, re-distribution lines connected with the bonding pads, and solder balls placed on the re-distribution lines.
- the size of the semiconductor package considerably decreases, because the solder balls are placed on the semiconductor chip.
- the solder balls are attached to the re-distribution lines and placed on the semiconductor chip according to the international standard of Joint Electron Device Engineering Council (JEDEC).
- JEDEC Joint Electron Device Engineering Council
- Embodiments of the present invention include a semiconductor package which provides areas for placing solder balls even when the size of a semiconductor chip decreases.
- embodiments of the present invention include a method for manufacturing the semiconductor package.
- a wafer level semiconductor package comprises a semiconductor chip having an upper surface, side surfaces which are connected with the upper surface, and bonding pads which are placed on the upper surface; a first insulation layer pattern covering the upper surface and the side surfaces and exposing the bonding pads; re-distribution lines placed on the first insulation layer pattern and having first re-distribution line parts which have one ends connected with the bonding pads and correspond to the upper surface of the semiconductor chip and second re-distribution line parts which extend from the first re-distribution line parts outside the side surfaces of the semiconductor chip; and a second insulation layer pattern exposing portions of the first re-distribution line parts and the second re-distribution line parts.
- An upper surface of the first insulation layer pattern is parallel to the upper surface of the semiconductor chip, and side surfaces of the first insulation layer pattern are parallel to the side surfaces of the semiconductor chip.
- the first insulation layer pattern comprises an organic layer pattern containing organic substance.
- the wafer level semiconductor package further comprises connection members electrically connected with the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- the semiconductor chip further has fuse boxes, which are insulated by the first insulation layer pattern.
- a wafer level semiconductor package comprises a semiconductor chip having an upper surface, side surfaces which are connected with the upper surface, and bonding pads which are placed on the upper surface; a first insulation layer pattern placed along the side surfaces of the semiconductor chip; re-distribution lines placed on the semiconductor chip and having first re-distribution line parts which are connected with the bonding pads and second re-distribution line parts which extend from the first re-distribution line parts over the first insulation layer pattern; and a second insulation layer pattern exposing portions of the first re-distribution line parts and the second re-distribution line parts.
- a thickness of the first insulation layer pattern is substantially the same as that of the semiconductor chip, and an upper surface of the first insulation layer pattern is positioned on substantially the same plane as the upper surface of the semiconductor chip.
- the first insulation layer pattern comprises an organic layer pattern containing organic substance.
- the wafer level semiconductor package further comprises connection members electrically connected with the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- a method for manufacturing a wafer level semiconductor package comprises the steps of placing at least two semiconductor chips having bonding pads on a carrier substrate; forming a first insulation layer pattern on the carrier substrate to cover upper surfaces of the semiconductor chips and side surfaces of the semiconductor chips which are connected with the upper surfaces and to expose the bonding pads; forming re-distribution lines on the first insulation layer pattern, the re-distribution lines having first re-distribution line parts which are connected with the bonding pads and second re-distribution line parts which extend from the first re-distribution line parts outside the side surfaces of the semiconductor chips; forming a second insulation layer pattern on the first insulation layer pattern to expose portions of the first re-distribution line parts and the second re-distribution line parts; and individualizing the respective semiconductor chips.
- the step of placing the semiconductor chips comprises the steps of inspecting semiconductor chips formed on a wafer and sorting good semiconductor chips and bad semiconductor chips; individualizing the good and bad semiconductor chips from the wafer; and placing the good semiconductor chips on the carrier substrate.
- the step of forming the first insulation layer pattern on the carrier substrate comprises the steps of applying a flowable insulation material on the carrier substrate and thereby forming a first insulation layer to cover the semiconductor chips; baking the first insulation layer; and patterning the first insulation layer to define openings for exposing the bonding pads and to expose a portion of the carrier substrate between the semiconductor chips.
- the step of forming the first insulation layer pattern on the carrier substrate comprises the steps of applying a flowable insulation material on the carrier substrate and thereby forming a first insulation layer to cover the semiconductor chips; baking the first insulation layer; and patterning the first insulation layer to define openings for exposing the bonding pads.
- the method further comprises the step of placing connection members on the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- connection members comprise solder balls containing solder.
- the method further comprises the step of separating the carrier substrate from the semiconductor chips.
- a semiconductor package comprises a semiconductor chip having bonding pads; a chip receiving body having side walls and a bottom plate which is coupled with the side walls to define a receiving space for receiving the semiconductor chip; and re-distribution lines having first ends which are electrically connected with the bonding pads and second ends which face away from the first ends and extend over upper surfaces of the side walls of the chip receiving body.
- the semiconductor package further comprises a solder resist pattern having openings for exposing portions of the re-distribution lines.
- the openings expose portions of first re-distribution line parts of the re-distribution lines, which correspond to an upper surface of the semiconductor chip, and portions of second re-distribution line parts of the re-distribution lines, which correspond to the upper surfaces of the side walls.
- the semiconductor package further comprises connection members electrically connected with the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- the bottom plate and the side walls are made of any one of metal and synthetic resin.
- the semiconductor package further comprises an adhesive member interposed between the semiconductor chip and the bottom plate.
- the semiconductor package further comprises an insulation layer having openings for exposing the bonding pads which are formed on the upper surface of the semiconductor chip.
- a total thickness of the bottom plate, the semiconductor chip and the insulation layer is the same as a height of the side walls.
- At least two semiconductor chips are located on the bottom plate in the receiving space in the form of a matrix.
- At least two semiconductor chips are the same kind of semiconductor chips.
- At least two semiconductor chips are different kinds of semiconductor chips.
- Bonding pads of at least two semiconductor chips are electrically connected with each other by the re-distribution lines.
- At least two semiconductor chips are stacked on the bottom plate in the receiving space and are electrically connected with each other by through-electrodes which are electrically connected with re-distribution lines.
- the semiconductor chips are the same kind of semiconductor chips.
- the semiconductor chips are different kinds of semiconductor chips.
- a method for manufacturing a semiconductor package comprises the steps of forming partition walls on a bottom plate in the form of lattices and thereby defining receiving spaces; placing good semiconductor chips having bonding pads, in the respective receiving spaces; forming re-distribution lines having first ends which are electrically connected with the bonding pads and second ends which face away from the first ends and extend over the partition walls; and cutting the partition walls and the bottom plate to individualize the semiconductor chips.
- the method further comprises the step of forming a solder resist pattern to cover the partition walls and the semiconductor chips and have openings for exposing portions of the re-distribution lines.
- the bottom plate has the shape of a disc.
- the method further comprises the step of defining through-holes in partition wall forming regions on the bottom plate by a pressing process.
- the bottom plate and the partition walls are made of any one of metal and synthetic resin.
- the step of placing the good semiconductor chips on the bottom plate comprises the step of forming an adhesive member on at least one of the semiconductor chips and the bottom plate.
- the method further comprises the steps of applying a flowable insulation material on the semiconductor chips and thereby forming an insulation layer which covers the semiconductor chips; and patterning the insulation layer and thereby exposing the bonding pads.
- At least two semiconductor chips are located on the bottom plate in each receiving space in the form of a matrix.
- the semiconductor chips are the same kind of semiconductor chips or different kinds of semiconductor chips.
- At least two semiconductor chips are sequentially stacked on the bottom plate in each receiving space and are electrically connected with each other by through-electrodes.
- the semiconductor chips are the same kind of semiconductor chips or different kinds of semiconductor chips.
- a semiconductor chip module including a plurality of stacked semiconductor chips, which are electrically connected with one another by through-electrodes, is placed in each receiving space.
- FIG. 1 is a plan view showing a wafer level semiconductor package in accordance with one embodiment of the present invention.
- FIG. 2 is a cross-sectional view taken along the line I-I′ of FIG. 1 .
- FIG. 3 is a plan view showing a wafer level semiconductor package in accordance with another embodiment of the present invention.
- FIG. 4 is a cross-sectional view taken along the line II-II′ of FIG. 3 .
- FIGS. 5 through 7 are cross-sectional views showing a method for manufacturing the wafer level semiconductor package in accordance with one embodiment of the present invention.
- FIG. 8 is a cross-sectional view showing a semiconductor package in accordance with another embodiment of the present invention.
- FIG. 9 is a cross-sectional view showing a semiconductor package in accordance with still another embodiment of the present invention.
- FIG. 10 is a cross-sectional view showing a semiconductor package in accordance with another embodiment of the present invention.
- FIGS. 11 through 26 are plan views and cross-sectional views showing a method for manufacturing the semiconductor package in accordance with another embodiment of the present invention.
- FIG. 1 is a plan view showing a semiconductor package in accordance with one embodiment of the present invention.
- FIG. 2 is a cross-sectional view taken along the line I-I′ of FIG. 1 .
- a semiconductor package 100 includes a semiconductor chip 110 , a first insulation layer pattern 120 , re-distribution lines 130 , and a second insulation layer pattern 140 .
- the semiconductor package 100 may further include connection members 150 containing, for example, a solder.
- the semiconductor chip 110 may have the shape of a rectangular hexahedron, although it should be understood that the semiconductor chip 110 may also have any number of other various shapes.
- the semiconductor chip 110 having the shape of a rectangular hexahedron includes an upper surface 111 , a lower surface 112 facing away from the upper surface 111 , and side surfaces 113 connecting the upper surface 111 and the lower surface 112 .
- the semiconductor chip 110 may further include a circuit section (not shown) and bonding pads 115 .
- the semiconductor chip 110 may further include fuse boxes 117 .
- the circuit section (not shown) includes a data storage part for storing data and a data processing part for processing the data.
- the bonding pads 115 are electrically connected with the circuit section.
- the bonding pads 115 receive data input to the circuit section from external devices and output data from the circuit section to the external devices.
- signals inputted to the bonding pads may include power supply signals, control signals, address signals, and data signals.
- the fuse boxes 117 function to repair the circuit section.
- the first insulation layer pattern 120 is formed over the upper surface 111 and the side surfaces 113 of the semiconductor chip 110 .
- an upper surface of the first insulation layer pattern 120 may include an upper surface, which is parallel to the upper surface 111 of the semiconductor chip 110 , and side surfaces, which are parallel to the side surfaces 113 of the semiconductor chip 110 .
- the first insulation layer pattern 120 includes first openings corresponding to the bonding pads 115 , which expose the bonding pads 115 .
- the first insulation layer pattern 120 may comprise, an organic layer containing an organic substance.
- the first insulation layer pattern 120 may comprise an inorganic layer containing an inorganic substance.
- the first insulation layer pattern 120 which covers the upper surface 111 and the side surfaces 113 of the semiconductor chip 110 , increases the area for locating the connection members 150 electrically connected with the re-distribution lines 130 as will be described below. As a result, the size of the semiconductor chip 110 can be reduced while allowing the connection members 150 to be located according to the international standard of JEDEC.
- each re-distribution line 130 has a first re-distribution line part 132 and a second re-distribution line part 134 .
- An end of the first re-distribution line part 132 is electrically connected with the bonding pad 115
- the second re-distribution line part 134 extends from the opposite end of the first re-distribution line part 132 over the upper surface of the first insulation layer pattern 120 along an edge thereof, the edge corresponding to the side surface 113 of the semiconductor chip 110 .
- the re-distribution lines 130 may be formed of a conductive material, for example, copper.
- the re-distribution lines 130 may include metal seed patterns, which have substantially the same shape as the re-distribution lines 130 .
- the second insulation layer pattern 140 is formed over the first insulation layer pattern 120 .
- the second insulation layer pattern 140 may comprise an organic layer containing an organic substance.
- the second insulation layer pattern 140 may comprise an inorganic layer containing an inorganic substance.
- the second insulation layer pattern 140 includes openings exposing portions of the first re-distribution line parts 132 and portions of the second re-distribution line parts 134 .
- the openings are located according to the international standard of JEDEC.
- connection members 150 are electrically connected with the first re-distribution line parts 132 and the second re-distribution line parts 134 , which are exposed through the openings defined in the second insulation layer pattern 140 .
- the connection members 150 may comprise solder balls containing solder.
- FIG. 3 is a plan view of a semiconductor package in accordance with another embodiment of the present invention.
- FIG. 4 is a cross-sectional view of the semiconductor package of FIG. 3 , taken along the line II-II′ of FIG. 3 .
- a semiconductor package 200 includes a semiconductor chip 210 , a first insulation layer pattern 220 , re-distribution lines 230 , and a second insulation layer pattern 240 .
- the semiconductor package 200 may include connection members 250 containing solder.
- the semiconductor package 200 according to the present embodiment can be applied to a semiconductor chip that does not include a fuse box.
- the semiconductor chip 210 may have the shape of, for example, a rectangular hexahedron, although it should be understood that the semiconductor chip 210 may have any number of other various shapes.
- the semiconductor chip 210 includes an upper surface 211 , a lower surface 212 facing away from the upper surface 211 , and side surfaces 213 which connect the upper surface 211 and the lower surface 212 .
- the semiconductor chip 210 may include a circuit section (not shown) and bonding pads 215 .
- the circuit section includes a data storage part for storing data and a data processing part for processing data.
- the bonding pads 215 are electrically connected with the circuit section.
- the bonding pads 215 function to input data from external devices to the circuit section or output data from the circuit section to the external devices.
- Signals that may be input to the bonding pads 215 include, but are not limited to, power supply signals, control signals, address signals, and data signals.
- the bonding pads 215 can, for example, be formed on a central portion of the upper surface 211 of the semiconductor chip 210 .
- the first insulation layer pattern 220 is formed along the side surfaces 213 of the semiconductor chip 210 .
- the first insulation layer pattern 220 formed along the side surfaces 213 of the semiconductor chip 210 may, for example, may be formed in the shape of a band.
- the first insulation layer pattern 220 is not formed on the upper surface 211 of the semiconductor chip 210 , but rather only along the side surfaces 213 of the semiconductor chip as shown in FIG. 4 .
- the first insulation layer pattern 220 includes an upper surface which is, for example, parallel to the upper surface 211 of the semiconductor chip 210 .
- the thickness of the first insulation layer pattern 220 is substantially the same as that of the semiconductor chip 210 .
- the first insulation layer pattern 220 may comprise, for example, an organic layer containing an organic substance.
- the first insulation layer pattern 220 may comprise an inorganic layer containing an inorganic substance.
- the first insulation layer pattern 220 may be formed of insulating synthetic resin or the like.
- the first insulation layer pattern 220 which is formed along the side surfaces 213 and covers the side surfaces 213 of the semiconductor chip 210 , increases the area available for locating the connection members 250 electrically connected with the re-distribution lines 230 , as will be described below, allowing the connection members 250 to be located according to the international standard of JEDEC.
- each re-distribution line 230 is placed on the upper surface 211 of the semiconductor chip 210 and the upper surface of the first insulation layer pattern 220 .
- each re-distribution line 230 has a first re-distribution line part 232 and a second re-distribution line part 234 .
- a first end of the first re-distribution line part 232 is electrically connected with the bonding pad 215
- the second re-distribution line part 234 extends from the opposite end of the first re-distribution line part 232 over the upper surface of the first insulation layer pattern 220 , which corresponds to the outside of the side surface 213 of the semiconductor chip 210 .
- the re-distribution lines 230 are formed of a conductive material, for example, copper.
- the re-distribution lines 230 may include metal seed patterns having substantially the same shape as the re-distribution lines 230 .
- the second insulation layer pattern 240 is formed over both the semiconductor chip 210 and the first insulation layer pattern 220 .
- the second insulation layer pattern 240 may comprise an organic layer containing an organic substance.
- the second insulation layer pattern 240 may comprise an inorganic layer containing an inorganic substance.
- the second insulation layer pattern 240 includes openings defined therein which expose portions of the first and second parts 232 , 234 of the re-distribution lines 230 .
- connection members 250 are electrically connected with portions of the first re-distribution line parts 232 and portions of the second re-distribution line parts 234 which are exposed through the openings defined in the second insulation layer pattern 240 .
- the connection members 250 may comprise solder balls containing solder.
- FIGS. 5 through 7 are a plan view and cross-sectional views illustrating a method for manufacturing the semiconductor package in accordance with one embodiment of the present invention.
- the step of locating or placing a plurality of semiconductor chips 110 on a carrier substrate 10 is implemented.
- the carrier substrate 10 may comprise, for example, a dummy wafer.
- the semiconductor chips 110 can include circuit sections (not shown and bonding pads 115 , which are electrically connected with the circuit sections.
- the semiconductor chips 110 may further include fuse boxes 117 , which are electrically connected with the circuit sections.
- a plurality of semiconductor chips which are formed on a wafer (not shown), are inspected through an electric die sorting (EDS) process, such that that it may be determined which semiconductor chips are good semiconductor chips and which are bad semiconductor chips, that is, determining which semiconductor chips have sufficiently high quality for a given application.
- EDS electric die sorting
- the semiconductor chips are individualized from the wafer through a sawing process.
- the good semiconductor chips are located or placed on the carrier substrate 10 using a die pick-up device, etc.
- the semiconductor chips 110 sorted as having good quality can be located on the carrier substrate 10 in such a way as to adjoin one another.
- a first insulation layer (not shown) is formed on the carrier substrate 10 to cover the semiconductor chips 110 sorted as having good quality by applying a flowable insulation material on the carrier substrate 10 .
- the first insulation layer may include a photosensitive substance.
- the first insulation layer may also be formed of another material. Then, the flowable insulation material covering the carrier substrate 10 is baked to form the first insulation layer, which covers the carrier substrate 10 .
- the baked first insulation layer is patterned through a patterning process that includes a lithographic process and a development process. Through the patterning process, a first insulation layer pattern 120 is formed to have openings 122 that expose the bonding pads 115 of the semiconductor chips 110 and also expose portions of the carrier substrate 10 between the semiconductor chips 110 .
- the baked first insulation layer may be patterned through a patterning process including a lithographic process and a development process in a manner such that openings 122 for exposing only the bonding pads 115 of the semiconductor chips 110 are defined. That is, the first insulation layer pattern 120 is formed on upper surfaces 111 of the respective semiconductor chips 110 and is filled in between the semiconductor chips 110 , by which the first insulation layer pattern 120 covers side surfaces 113 of the semiconductor chips 110 . In the present embodiment, the upper surface of the first insulation layer pattern 120 becomes parallel to the upper surfaces 111 of the semiconductor chips 110 .
- re-distribution lines 130 are formed over the carrier substrate 10 .
- a metal seed layer (not shown) is formed on the first insulation layer pattern 120 and the bonding pads 115 which are exposed through the first insulation layer pattern 120 .
- the metal seed layer can be formed, for example, through a sputtering process, and may be formed of a material such as titanium, nickel, vanadium, and copper.
- photoresist patterns (not shown), which have openings for forming the re-distribution lines 130 , are formed on the metal seed layer.
- each re-distribution line 130 includes a first re-distribution line part 132 and a second re-distribution line part 134 .
- a first end of the first re-distribution line part 132 is electrically connected with the bonding pad 115 , and the second re-distribution line part 134 extends from the opposite end of the first re-distribution line part 132 along a portion of the upper surface of the first insulation layer pattern 120 which corresponds to the outside of the side surface 113 of the semiconductor chip 110 .
- the re-distribution lines 130 may be formed of a conductive material, for example, copper.
- a second insulation layer pattern 140 is formed on the first insulation layer pattern 120 .
- the second insulation layer pattern 140 can comprise an organic layer containing an organic substance.
- the second insulation layer pattern 140 has openings corresponding to the first and second re-distribution line parts 132 , 134 which expose the first re-distribution line parts 132 and the second re-distribution line parts 134 .
- Connection members 150 are electrically connected with the re-distribution lines 130 which are exposed through the openings defined in the second insulation layer pattern 140 . Subsequently, the carrier substrate 10 is removed from the semiconductor chips 110 , and the semiconductor chips 110 are individualized, and the individualized semiconductor chips may then be utilized in the manufacture of semiconductor packages.
- connection members 150 may be located outside the side surfaces 113 of the semiconductor chips 110 . Due to this fact, the connection members 150 can be formed on the semiconductor chips 110 in accordance with the international standard of JEDEC, even when a semiconductor chip 110 has an area which is smaller than that prescribed in JEDEC as the international standard for the location of the connection members 150 . That is, as the reduction of the size of semiconductor chips continues, the surface area of the semiconductor chip becomes too small to form connection members in accordance with the international standard of JEDEC. However, according to an embodiment of the present invention, connection members may be formed in accordance with the international standard of JEDEC even on such semiconductor chips.
- FIG. 8 is a cross-sectional view of a semiconductor package in accordance with another embodiment of the present invention.
- a semiconductor package 900 includes a semiconductor chip 600 , a chip receiving body 700 , and re-distribution lines 800 .
- the semiconductor chip 600 has the shape of, for example, a rectangular hexahedron although it should be understood that the semiconductor chip 600 may also have any number of other various shapes.
- the semiconductor chip 600 having the shape of a rectangular hexahedron has an upper surface 610 , a lower surface 620 facing away from the upper surface 610 , and side surfaces 630 connecting the upper surface 610 and the lower surface 620 .
- the semiconductor chip 600 includes a circuit section (not shown) and bonding pads 640 .
- the circuit section includes a data storage part (not shown) for storing data and a data processing part (not shown) for processing data.
- the bonding pads 640 are located on the upper surface 610 of the semiconductor chip 600 and are electrically connected with the circuit section. According to an embodiment of the present invention, the bonding pads 640 may be formed on a central portion of the upper surface 610 of the semiconductor chip 600 . Alternatively, the bonding pads 640 may be located along the edges of the upper surface 610 of the semiconductor chip 600 .
- the chip receiving body 700 includes side walls 710 and a bottom plate 720 .
- the side walls 710 and the bottom plate 720 of the chip receiving body 700 define a space for receiving the semiconductor chip 600 .
- the bottom plate 720 has, for example, the shape of a rectangle which is substantially similar to the shape of the semiconductor chip 600 .
- the side walls 710 are formed on the side surfaces of the bottom plate 720 .
- the side surfaces of the bottom plate 720 contact the inner surfaces of the side walls 710 , as shown in FIG. 8 .
- the side walls 710 and the bottom plate 720 may be made of any one of metal and synthetic resin.
- the bottom plate 720 may comprise a metal
- the side walls 710 may comprise a synthetic resin.
- the bottom plate 720 may be made of synthetic resin
- the side walls 710 may be made of metal.
- both the side walls 710 and the bottom plate 720 may be made of synthetic resin, or both the side walls 710 and the bottom plate 720 may be made of metal.
- the side walls 710 are made of synthetic resin, and the bottom plate 720 is made of metal.
- the bottom plate 720 comprises a metal which has excellent heat conductivity such as, copper, aluminum, silver, or the like.
- the semiconductor chip 600 is secured in the chip receiving body 700 including the side walls 710 and the bottom plate 720 , by an adhesive member 650 interposed between the bottom plate 720 and the lower surface 620 of the semiconductor chip 600 .
- the adhesive member 650 can comprise, for example, epoxy resin or a double-sided adhesive tape. It should be understood that other means of adhesion may also be appropriate for securing the semiconductor chip 600 within the chip receiving body 700 .
- the adhesive member 650 may be placed on the lower surface 620 of the semiconductor chip 600 or the upper surface of the bottom plate 720 .
- An insulation layer 660 is formed on the upper surface 610 of the semiconductor chip 600 , which is received in the receiving space of the chip receiving body 700 .
- the insulation layer 660 may comprise, for example, an organic layer.
- the insulation layer 660 includes openings exposing the bonding pads 640 formed on the upper surface 610 of the semiconductor chip 600 .
- the insulation layer 660 is also formed on the upper surfaces of the side walls 710 when the side walls 710 are made of metal.
- the total thickness of the bottom plate 720 , the adhesive member 650 , the semiconductor chip and the insulation layer 660 is substantially the same as the height of the side walls 710 .
- the re-distribution lines 800 have the shape of a line when viewed from above. An end of each re-distribution line 800 is electrically connected with a corresponding bonding pad 640 , which is exposed through the opening of the insulation layer 660 , and the opposite end of each re-distribution line 800 extends onto the upper surface of the side wall 710 .
- each re-distribution line includes a first and a second re-distribution line part 810 , 820 , the first re-distribution line part 810 being the portion of a re-distribution line 800 formed on the upper surface 610 of the semiconductor chip 600 , and the second first re-distribution line part 820 being the portion of the re-distribution line 800 formed on the upper surface of the side wall 710 .
- the semiconductor package 900 according to the present embodiment may further include a solder resist pattern 830 .
- the solder resist pattern 830 covers the upper surface of the resultant semiconductor chip 600 and the sidewalls 710 having the re-distribution lines 800 formed thereon.
- the solder resist pattern 830 includes a plurality of openings which expose, for example, portions of the first re-distribution line parts 810 and the second re-distribution line parts 820 of the re-distribution lines 800 .
- the openings defined in the solder resist pattern 830 are located according to the international standard of JEDEC.
- Connection members 835 comprising a low melting point metal, such as solder, are located on the portions of the first re-distribution line parts 810 and the second re-distribution line parts 820 which are exposed through the openings defined in the solder resist pattern 830 .
- the connection members 835 are located according to the international standard of JEDEC.
- FIG. 9 is a cross-sectional view showing a semiconductor package in accordance with still another embodiment of the present invention.
- a semiconductor package 900 includes semiconductor chips 662 , 664 , and 666 , a chip receiving body 700 , and re-distribution lines 830 , 840 , and 850 .
- the chip receiving body 700 includes side walls 710 and a bottom plate 720 .
- the side walls 710 and the bottom plate 720 of the chip receiving body 700 define a space for receiving the semiconductor chips 662 , 664 , and 666 .
- the bottom plate 720 has the shape of a rectangle, although it should be should understood that other the bottom plate 720 may also have any number of other various shapes.
- the side walls 710 are placed on the side surfaces of the bottom plate 720 . In the present embodiment, the side surfaces of the bottom plate 720 contact the inner surfaces of the side walls 710 .
- the side walls 710 and the bottom plate 720 may be made of any one of metal and synthetic resin.
- the bottom plate 720 may be made of metal, and the side walls 710 may be made of synthetic resin.
- the bottom plate 720 may be made of synthetic resin, and the side walls 710 may be made of metal.
- both the side walls 710 and the bottom plate 720 may be made of synthetic resin, or both of the side walls 710 and the bottom plate 720 may be made of metal.
- the side walls 710 comprise a synthetic resin
- the bottom plate 720 comprises a metal.
- the bottom plate 720 is formed of a metal having excellent heat conductivity such as copper, aluminum, or silver.
- an adhesive member 650 is interposed between the bottom plate 720 and the semiconductor chips 662 , 664 , and 666 .
- the adhesive member 650 may comprise epoxy resin or a double-sided adhesive tape.
- the adhesive member 650 may be placed on the lower surfaces of the semiconductor chips 662 , 664 and 666 or alternatively the adhesive member 650 may be placed on the upper surface of the bottom plate 720 .
- the plurality of semiconductor chips 662 , 664 , and 666 are located on the bottom plate 720 of the chip receiving body 700 .
- the plurality of semiconductor chips 662 , 664 , and 666 may be located on the bottom plate 720 in the form of a matrix.
- the semiconductor chips 662 , 664 , and 666 may be located on the bottom plate 720 in the form of a 3 ⁇ 1 matrix, a 3 ⁇ 2 matrix, a 3 ⁇ 3 matrix, etc.
- the semiconductor chips 662 , 664 , and 666 are located in the form of a 3 ⁇ 1 matrix.
- the middle semiconductor chip among the semiconductor chips 662 , 664 , and 666 located on the bottom plate 720 is defined as a first semiconductor chip 662
- the semiconductor chips, which are located on the sides of the first semiconductor chip 662 are defined as a second semiconductor chip 664 and a third semiconductor chip 666 respectively.
- the first semiconductor chip 662 has first bonding pads 663
- the second semiconductor chip 664 has second bonding pads 665
- the third semiconductor chip 666 has third bonding pads 667 .
- the first through third semiconductor chips 662 , 664 , and 666 may be the same kind of semiconductor chips, or alternatively at least one of the first through third semiconductor chips 662 , 664 , and 666 may be a different kind of semiconductor chip.
- the first semiconductor chip 662 may be a system semiconductor chip
- the second and third semiconductor chips 664 and 666 may be memory semiconductor chips.
- first re-distribution lines 830 are electrically connected with the first bonding pads 663
- second re-distribution lines 840 are electrically connected with the second bonding pads 665
- third re-distribution lines 850 are electrically connected with the third bonding pads 667 .
- the first re-distribution lines 830 extend to the upper surfaces of the second and third semiconductor chips 664 and 666
- the second and third re-distribution lines 840 and 850 extend to the upper surfaces of the side walls 710 of the chip receiving body 700 .
- a solder resist pattern 835 is formed on first through third re-distribution lines 830 , 840 , and 850 . Openings are defined in the solder resist pattern 835 which expose portions of the first through third re-distribution lines 830 , 840 , and 850 .
- Connection members 855 are formed on the portions of the first through third re-distribution lines 830 , 840 , and 850 which are exposed through the openings defined in the solder resist pattern 835 .
- the connection members 855 contain a low melting point metal such as solder.
- FIG. 10 is a cross-sectional view showing a semiconductor package in accordance with another embodiment of the present invention.
- a semiconductor package 900 includes semiconductor chips 672 , 674 , and 676 , a chip receiving body 700 , and re-distribution lines 860 , 870 , and 880 .
- the semiconductor package 900 may further include a solder resist pattern 830 and connection members 885 .
- the chip receiving body 700 includes side walls 710 and a bottom plate 720 .
- the side walls 710 and the bottom plate 720 of the chip receiving body 700 define a space for receiving the semiconductor chips 672 , 674 and 676 .
- the bottom plate 720 has, for example, the shape of a rectangle, although it should be understood that the bottom plate may alternatively have another shape.
- the side walls 710 are placed on the side surfaces of the bottom plate 720 .
- the side surfaces of the bottom plate 720 contact, for example, the inner surfaces of the side walls 710 .
- the side walls 710 and the bottom plate 720 may be made of any one of metal and synthetic resin.
- the bottom plate 720 may be made of metal, and the side walls 710 may be made of synthetic resin.
- the bottom plate 720 may be made of synthetic resin, and the side walls 710 may be made of metal.
- both the side walls 710 and the bottom plate 720 may be made of synthetic resin, or both the side walls 710 and the bottom plate 720 may be made of metal.
- the side walls 710 and the bottom plate 720 are made of metal.
- the bottom plate 720 is formed of a material which has excellent heat conductivity, for example copper, aluminum, or silver.
- an adhesive member 650 is interposed between the bottom plate 720 and the semiconductor chip 672 .
- the adhesive member 650 may comprise, for example, epoxy resin or a double-sided adhesive tape.
- the adhesive member 650 may be placed on the lower surface of the semiconductor chip 672 or the upper surface of the bottom plate 720 .
- the plurality of semiconductor chips 672 , 674 , and 676 are sequentially stacked on the bottom plate 720 of the chip receiving body 700 .
- the semiconductor chips, which are stacked on the bottom plate 720 are respectively defined as first through third semiconductor chips 672 , 674 , and 676 .
- the first semiconductor chip 672 is placed on the adhesive member 650
- the second semiconductor chip 674 is placed on the first semiconductor chip 672
- the third semiconductor chip 676 is placed on the second semiconductor chip 674 .
- the first semiconductor chip 672 has first bonding pads 673
- the second semiconductor chip 674 has second bonding pads 675
- the third semiconductor chip 676 has third bonding pads 677 .
- the first semiconductor chip 672 has first through-electrodes 672 a
- the second semiconductor chip 674 has second through-electrodes 674 a
- the third semiconductor chips 676 has third through-electrodes 676 a .
- the first through third through-electrodes 672 a , 674 a , and 676 a are located at substantially the same position, such that the first through third through electrodes 672 a , 674 a , and 676 a are aligned in the vertical direction.
- the first through third semiconductor chips 672 , 674 , and 676 may be the same kind of semiconductor chips. Alternatively, at least one of the first through third semiconductor chips 672 , 674 , and 676 may be a different kind of semiconductor chip.
- the first semiconductor chip 672 may be a system semiconductor chip
- the second and third semiconductor chips 674 and 676 may be memory semiconductor chips.
- first re-distribution lines 860 are electrically connected with both the first bonding pads 673 and the first through-electrodes 672 a
- second re-distribution lines 870 are electrically connected with both the second bonding pads 675 and the second through-electrodes 674 a
- third re-distribution lines 880 are electrically connected with both the third bonding pads 677 and the third through-electrodes 676 a.
- the first re-distribution lines 860 are electrically connected with the second through-electrodes 674 a
- the second re-distribution lines 870 are electrically connected with the third through-electrodes 676 a
- the third re-distribution lines 880 are formed to extend over the upper surfaces of the side walls 710 of the chip receiving body 700 .
- the solder resist pattern 830 is formed to cover the third re-distribution lines 880 which extend over the upper surfaces of the side walls 710 . Openings are defined in the solder resist pattern 830 which expose portions of the third re-distribution lines 880 .
- Connection members 855 are electrically connected with the portions of the third re-distribution lines 880 which are exposed through the openings defined in the solder resist pattern 830 .
- the connection members 855 are formed of a low melting point metal, for example solder.
- the operation of semiconductor chips results in the generation of heat.
- the amount of heat generated may be such that the semiconductor package fails to operate properly.
- a large amount of heat generated in the semiconductor chips stacked upon one another can be dissipated to the outside through the side walls 710 and the bottom plate 720 of the chip receiving body 700 , such that the data processing speed of the semiconductor package 900 can be increased.
- FIGS. 11 through 26 are plan views and cross-sectional views showing a method for manufacturing the semiconductor package in accordance with another embodiment of the present invention.
- FIG. 11 is a plan view showing a bottom plate used for manufacturing semiconductor packages according to the present invention.
- FIG. 12 is a cross-sectional view taken along the line III-III′ of FIG. 11 .
- a bottom plate 701 is prepared.
- the bottom plate 701 has the shape of a disc when viewed from above.
- the bottom plate 701 has the same shape as a wafer, or a circular disc.
- the bottom plate 701 is formed, for example, of a metal having excellent heat conductivity, such as aluminum, aluminum alloy, copper, or copper alloy.
- the bottom plate 701 may be formed of a synthetic resin.
- FIG. 13 is a plan view showing the defining of through-holes in the bottom plate shown in FIG. 11 .
- FIG. 14 is a sectional view taken along the line IV-IV′ of FIG. 13 .
- through-holes 703 are defined at regions 702 of the bottom plate 701 where partition walls are to be formed as will be described later, such that the through-holes 703 adjoin one another.
- the regions 702 are defined in the form of lattices on the bottom plate 701 .
- the through-holes 703 adjoining one another can be defined in the bottom plate 701 , for example, by conducting a pressing process in the regions 702 .
- the through-holes 703 have the shape of slots when viewed from above.
- FIG. 15 is a plan view showing the formation of partition walls on the bottom plate shown in FIG. 13 .
- FIG. 16 is a to cross-sectional view taken along the line V-V′ of FIG. 15 .
- partition walls 715 are formed along the regions 702 shown in FIG. 13 .
- Receiving spaces are defined on the bottom plate 701 by the partition walls 715 which are formed to have a predetermined height when measured from the upper surface of the bottom plate 701 .
- the partition walls 715 may be formed by a process including, for example, pouring synthetic resin in molds.
- the partition walls 715 may be arranged in a lattice pattern when viewed from the top. The partition walls 715 pass through the bottom plate 701 due to the presence of the through-holes 703 .
- the side surfaces of the partition walls 715 contact the side surfaces of the bottom plate 701 .
- the partition walls 715 may be formed by arranging metal plates, each having the shape of a rectangular hexahedron, into a lattice pattern within the through-holes 703 .
- a plurality of chip mounting regions 704 are defined on the bottom plate 701 , by the partition walls 715 having the lattice pattern.
- FIG. 17 is a plan view showing the formation of the adhesive members in the chip mounting regions shown in FIG. 15 .
- FIG. 18 is a cross-sectional view taken along the line VI-VI′ of FIG. 17 .
- adhesive members 650 are placed in the respective chip mounting regions 704 , which are defined by the partition walls 715 on the bottom plate 701 .
- the adhesive members 650 may comprise an adhesive tape or a flowable adhesive containing epoxy.
- the adhesive members 650 may be placed on the lower surfaces of semiconductor chips, which are subsequently placed in the respective chip mounting regions 704 .
- FIG. 19 is a plan view showing the locating of the semiconductor chips in the chip mounting regions shown in FIG. 18 .
- FIG. 20 is a cross-sectional view taken along the line VII-VII′ of FIG. 19 .
- semiconductor chips 600 are located in the respective chip mounting regions 704 defined by the partition walls 715 and positioned on the bottom plate 701 .
- Each semiconductor chip 600 has an upper surface 610 , a lower surface 620 which faces away from the upper surface 610 , and side surfaces 630 which connect the upper surface 610 and the lower surface 620 .
- Each semiconductor chip 600 has the shape of, for example, a rectangular hexahedron, although it should be understood that a semiconductor chip may have any number of other shapes as well.
- Bonding pads 640 are placed on the upper surface 610 of each semiconductor chip 600 .
- the bonding pads 640 may be placed on a central portion of the upper surface 610 of the semiconductor chip 600 .
- each semiconductor chip 600 is placed on the bottom plate 701 and is bonded thereto by an adhesive member 650 .
- the partition walls 715 extend above the upper surfaces 610 of the semiconductor chips 600 by a predetermined amount.
- FIG. 21 is a plan view showing the formation of an insulation layer on the upper surfaces of the semiconductor chips shown in FIG. 19 .
- FIG. 22 is a sectional view taken along the line VIII-VIII′ of FIG. 21 .
- an insulation material 650 is applied on the semiconductor chips 600 , by which an insulation layer 660 for covering the upper surfaces 610 of the semiconductor chips 600 is formed.
- a flowable insulation material 665 is applied on the upper surfaces 610 of the semiconductor chips 600 . Then the flowable insulation material 665 is uniformly spread by a scraper 667 , so as to form an insulation layer 660 on the upper surfaces 610 of the semiconductor chips 600 .
- the total thickness of the bottom plate 701 , the adhesive member 650 , the semiconductor chip 600 and the insulation layer 660 are substantially the same as the height of the partition wall 715 .
- the insulation layer 660 may be formed on the partition walls 715 in addition to the semiconductor chips 600 .
- FIG. 23 is a plan view showing the patterning of the is insulation layer shown in FIG. 21 .
- FIG. 24 is a cross-sectional view taken along the line IX-IX′ of FIG. 23 .
- openings exposing the bonding pads 640 are defined by patterning the insulation layer 660 formed on the semiconductor chips 600 .
- FIG. 25 is a cross-sectional view showing re-distribution lines, a solder resist pattern, and connection members, which are formed on the semiconductor chips shown in FIG. 24 .
- re-distribution lines 800 are formed on the semiconductor chips 600 and the partition walls 715 .
- an end of each re-distribution line 800 is electrically connected with a corresponding bonding pad 640 of the semiconductor chip 600 , and the opposite end of each re-distribution line 800 extends partially or entirely over the upper surface of the partition wall 715 .
- a solder resist pattern 830 covers the upper surfaces 610 of the semiconductor chips 600 and the upper surfaces of the partition walls 715 . Openings are defined by patterning the solder resist pattern 830 . The openings expose first re-distribution line parts of the re-distribution lines 800 , which correspond to the upper surfaces 610 of the semiconductor chips 600 , and second re-distribution line parts of the re-distribution lines 800 , which correspond to the upper surfaces of the partition walls 715 .
- connection members 835 are connected to portions of the first and second re-distribution line parts of the re-distribution lines 800 , which are exposed through the openings defined in the solder resist pattern 830 .
- FIG. 26 is a cross-sectional view showing a semiconductor packages formed by cutting the partition walls shown in FIG. 25 .
- the partition walls 715 are cut, such that, semiconductor packages 900 each having side walls 710 and a bottom plate 720 are manufactured.
- each semiconductor chip 600 is placed in a chip mounting region 704 defined by the partition walls 715 , it should be readily understood that a plurality of semiconductor chips 662 , 664 , and 666 can be placed in a chip mounting region in the form of a matrix as shown in FIG. 9 .
- the semiconductor chips 662 , 664 , and 666 may each be the same kind of semiconductor chips, or alternatively, the semiconductor chips 662 , 664 , and 666 may be different kinds of semiconductor chips.
- each semiconductor chip 600 is placed in a chip mounting region 704 defined by the partition walls 715 , it should be readily understood that a plurality of semiconductor chips 672 , 674 , and 676 may be stacked in a chip mounting region and be connected with one another by through-electrodes 672 a , 674 a , and 676 a as shown in FIG. 10 .
- the individual semiconductor chips may be sequentially stacked upon one another in the chip mounting region or a semiconductor chip module including a plurality of stacked semiconductor chips may be placed in the chip mounting region.
- the semiconductor chips 672 , 674 , and 676 may be the same kind of semiconductor chips, or alternatively, the semiconductor chips 672 , 674 , and 676 may be different kinds of semiconductor chips.
- connection members can be located according to the international standard of JEDEC by forming side walls which cover the side surfaces of the semiconductor chip. Also, according to the present invention the operational characteristics of the semiconductor chip can be improved, because by placing a bottom plate having excellent heat conductivity on the lower surface of the semiconductor chip, heat generated in the semiconductor chip can be rapidly dissipated to the outside.
- connection members in a semiconductor package which are needed to process data with a high density at a high speed, can be increased.
Abstract
A semiconductor package includes a semiconductor chip having an upper surface, side surfaces connected with the upper surface, and bonding pads formed on the upper surface. A first insulation layer pattern is formed to cover the upper surface and the side surfaces of the semiconductor chip and expose the bonding pads. Re-distribution lines are placed on the first insulation layer pattern and include first re-distribution line parts and second re-distribution line parts. The first re-distribution line parts have an end connected with the bonding pads and correspond to the upper surface of the semiconductor chip and the second re-distribution line parts extend from the first re-distribution line parts beyond the side surfaces of the semiconductor chip. A second insulation layer pattern is formed over the semiconductor chip and exposes portions of the first re-distribution line parts and the second re-distribution line parts.
Description
- The present application claims priorities to Korean patent application numbers 10-2008-0021983 filed on Mar. 10, 2008 and 10-2008-0085386 filed on Aug. 29, 2008, which are incorporated herein by reference in their entireties.
- The present invention relates generally to a semiconductor package and a method for manufacturing the same, and more particularly to a semiconductor package having side walls formed around a semiconductor chip to increase the bonding area of the semiconductor chip package.
- Semiconductor chips capable of storing large amounts of data and processing the data rapidly and semiconductor packages utilizing such semiconductor chips have been developed. Chip scale packages that are no more than about 100% to 105% of the size of semiconductor chips have been disclosed in the art.
- One such chip scale package is a wafer level package, which includes a semiconductor chip, bonding pads formed on the semiconductor chip, re-distribution lines connected with the bonding pads, and solder balls placed on the re-distribution lines. In the wafer level package above, the size of the semiconductor package considerably decreases, because the solder balls are placed on the semiconductor chip. The solder balls are attached to the re-distribution lines and placed on the semiconductor chip according to the international standard of Joint Electron Device Engineering Council (JEDEC).
- As semiconductor chip manufacturing processes continue to evolve, the size of the semiconductor chip gradually decreases. Therefore, problems associated with the decrease in the size of the semiconductor chip, in that it is difficult to attach solder balls on the semiconductor chip according to the international standard of JEDEC.
- Embodiments of the present invention include a semiconductor package which provides areas for placing solder balls even when the size of a semiconductor chip decreases.
- Also, embodiments of the present invention include a method for manufacturing the semiconductor package.
- In one embodiment of the present invention, a wafer level semiconductor package comprises a semiconductor chip having an upper surface, side surfaces which are connected with the upper surface, and bonding pads which are placed on the upper surface; a first insulation layer pattern covering the upper surface and the side surfaces and exposing the bonding pads; re-distribution lines placed on the first insulation layer pattern and having first re-distribution line parts which have one ends connected with the bonding pads and correspond to the upper surface of the semiconductor chip and second re-distribution line parts which extend from the first re-distribution line parts outside the side surfaces of the semiconductor chip; and a second insulation layer pattern exposing portions of the first re-distribution line parts and the second re-distribution line parts.
- An upper surface of the first insulation layer pattern is parallel to the upper surface of the semiconductor chip, and side surfaces of the first insulation layer pattern are parallel to the side surfaces of the semiconductor chip.
- The first insulation layer pattern comprises an organic layer pattern containing organic substance.
- The wafer level semiconductor package further comprises connection members electrically connected with the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- The semiconductor chip further has fuse boxes, which are insulated by the first insulation layer pattern.
- In another embodiment of the present invention, a wafer level semiconductor package comprises a semiconductor chip having an upper surface, side surfaces which are connected with the upper surface, and bonding pads which are placed on the upper surface; a first insulation layer pattern placed along the side surfaces of the semiconductor chip; re-distribution lines placed on the semiconductor chip and having first re-distribution line parts which are connected with the bonding pads and second re-distribution line parts which extend from the first re-distribution line parts over the first insulation layer pattern; and a second insulation layer pattern exposing portions of the first re-distribution line parts and the second re-distribution line parts.
- A thickness of the first insulation layer pattern is substantially the same as that of the semiconductor chip, and an upper surface of the first insulation layer pattern is positioned on substantially the same plane as the upper surface of the semiconductor chip.
- The first insulation layer pattern comprises an organic layer pattern containing organic substance.
- The wafer level semiconductor package further comprises connection members electrically connected with the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- In another embodiment of the present invention, a method for manufacturing a wafer level semiconductor package comprises the steps of placing at least two semiconductor chips having bonding pads on a carrier substrate; forming a first insulation layer pattern on the carrier substrate to cover upper surfaces of the semiconductor chips and side surfaces of the semiconductor chips which are connected with the upper surfaces and to expose the bonding pads; forming re-distribution lines on the first insulation layer pattern, the re-distribution lines having first re-distribution line parts which are connected with the bonding pads and second re-distribution line parts which extend from the first re-distribution line parts outside the side surfaces of the semiconductor chips; forming a second insulation layer pattern on the first insulation layer pattern to expose portions of the first re-distribution line parts and the second re-distribution line parts; and individualizing the respective semiconductor chips.
- The step of placing the semiconductor chips comprises the steps of inspecting semiconductor chips formed on a wafer and sorting good semiconductor chips and bad semiconductor chips; individualizing the good and bad semiconductor chips from the wafer; and placing the good semiconductor chips on the carrier substrate.
- The step of forming the first insulation layer pattern on the carrier substrate comprises the steps of applying a flowable insulation material on the carrier substrate and thereby forming a first insulation layer to cover the semiconductor chips; baking the first insulation layer; and patterning the first insulation layer to define openings for exposing the bonding pads and to expose a portion of the carrier substrate between the semiconductor chips.
- The step of forming the first insulation layer pattern on the carrier substrate comprises the steps of applying a flowable insulation material on the carrier substrate and thereby forming a first insulation layer to cover the semiconductor chips; baking the first insulation layer; and patterning the first insulation layer to define openings for exposing the bonding pads.
- The method further comprises the step of placing connection members on the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- The connection members comprise solder balls containing solder.
- Before the step of individualizing the semiconductor chips, the method further comprises the step of separating the carrier substrate from the semiconductor chips.
- In still another aspect of the present invention, a semiconductor package comprises a semiconductor chip having bonding pads; a chip receiving body having side walls and a bottom plate which is coupled with the side walls to define a receiving space for receiving the semiconductor chip; and re-distribution lines having first ends which are electrically connected with the bonding pads and second ends which face away from the first ends and extend over upper surfaces of the side walls of the chip receiving body.
- The semiconductor package further comprises a solder resist pattern having openings for exposing portions of the re-distribution lines.
- The openings expose portions of first re-distribution line parts of the re-distribution lines, which correspond to an upper surface of the semiconductor chip, and portions of second re-distribution line parts of the re-distribution lines, which correspond to the upper surfaces of the side walls.
- The semiconductor package further comprises connection members electrically connected with the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
- Side surfaces of the bottom plate contact inner surfaces of the side walls.
- The bottom plate and the side walls are made of any one of metal and synthetic resin.
- The semiconductor package further comprises an adhesive member interposed between the semiconductor chip and the bottom plate.
- The semiconductor package further comprises an insulation layer having openings for exposing the bonding pads which are formed on the upper surface of the semiconductor chip.
- A total thickness of the bottom plate, the semiconductor chip and the insulation layer is the same as a height of the side walls.
- At least two semiconductor chips are located on the bottom plate in the receiving space in the form of a matrix.
- At least two semiconductor chips are the same kind of semiconductor chips.
- At least two semiconductor chips are different kinds of semiconductor chips.
- Bonding pads of at least two semiconductor chips are electrically connected with each other by the re-distribution lines.
- At least two semiconductor chips are stacked on the bottom plate in the receiving space and are electrically connected with each other by through-electrodes which are electrically connected with re-distribution lines.
- The semiconductor chips are the same kind of semiconductor chips.
- The semiconductor chips are different kinds of semiconductor chips.
- In yet another embodiment of the present invention, a method for manufacturing a semiconductor package comprises the steps of forming partition walls on a bottom plate in the form of lattices and thereby defining receiving spaces; placing good semiconductor chips having bonding pads, in the respective receiving spaces; forming re-distribution lines having first ends which are electrically connected with the bonding pads and second ends which face away from the first ends and extend over the partition walls; and cutting the partition walls and the bottom plate to individualize the semiconductor chips.
- After the step of forming the re-distribution lines, the method further comprises the step of forming a solder resist pattern to cover the partition walls and the semiconductor chips and have openings for exposing portions of the re-distribution lines.
- The bottom plate has the shape of a disc.
- Before the step of forming the partition walls, the method further comprises the step of defining through-holes in partition wall forming regions on the bottom plate by a pressing process.
- The bottom plate and the partition walls are made of any one of metal and synthetic resin.
- The step of placing the good semiconductor chips on the bottom plate comprises the step of forming an adhesive member on at least one of the semiconductor chips and the bottom plate.
- Before the step of forming the re-distribution lines, the method further comprises the steps of applying a flowable insulation material on the semiconductor chips and thereby forming an insulation layer which covers the semiconductor chips; and patterning the insulation layer and thereby exposing the bonding pads.
- In the step of placing the semiconductor chips in the respective receiving spaces defined by the partition walls, at least two semiconductor chips are located on the bottom plate in each receiving space in the form of a matrix.
- The semiconductor chips are the same kind of semiconductor chips or different kinds of semiconductor chips.
- In the step of placing the semiconductor chips in the respective receiving spaces defined by the partition walls, at least two semiconductor chips are sequentially stacked on the bottom plate in each receiving space and are electrically connected with each other by through-electrodes.
- The semiconductor chips are the same kind of semiconductor chips or different kinds of semiconductor chips.
- In the step of placing the semiconductor chips in the respective receiving spaces defined by the partition walls, a semiconductor chip module including a plurality of stacked semiconductor chips, which are electrically connected with one another by through-electrodes, is placed in each receiving space.
-
FIG. 1 is a plan view showing a wafer level semiconductor package in accordance with one embodiment of the present invention. -
FIG. 2 is a cross-sectional view taken along the line I-I′ ofFIG. 1 . -
FIG. 3 is a plan view showing a wafer level semiconductor package in accordance with another embodiment of the present invention. -
FIG. 4 is a cross-sectional view taken along the line II-II′ ofFIG. 3 . -
FIGS. 5 through 7 are cross-sectional views showing a method for manufacturing the wafer level semiconductor package in accordance with one embodiment of the present invention. -
FIG. 8 is a cross-sectional view showing a semiconductor package in accordance with another embodiment of the present invention. -
FIG. 9 is a cross-sectional view showing a semiconductor package in accordance with still another embodiment of the present invention. -
FIG. 10 is a cross-sectional view showing a semiconductor package in accordance with another embodiment of the present invention. -
FIGS. 11 through 26 are plan views and cross-sectional views showing a method for manufacturing the semiconductor package in accordance with another embodiment of the present invention. -
FIG. 1 is a plan view showing a semiconductor package in accordance with one embodiment of the present invention.FIG. 2 is a cross-sectional view taken along the line I-I′ ofFIG. 1 . - Referring to
FIGS. 1 and 2 , asemiconductor package 100 includes asemiconductor chip 110, a firstinsulation layer pattern 120,re-distribution lines 130, and a secondinsulation layer pattern 140. In addition, thesemiconductor package 100 may further includeconnection members 150 containing, for example, a solder. - According to an embodiment of the present invention, the
semiconductor chip 110 may have the shape of a rectangular hexahedron, although it should be understood that thesemiconductor chip 110 may also have any number of other various shapes. - The
semiconductor chip 110 having the shape of a rectangular hexahedron includes anupper surface 111, alower surface 112 facing away from theupper surface 111, andside surfaces 113 connecting theupper surface 111 and thelower surface 112. - The
semiconductor chip 110 may further include a circuit section (not shown) andbonding pads 115. In addition, thesemiconductor chip 110 may further includefuse boxes 117. - The circuit section (not shown) includes a data storage part for storing data and a data processing part for processing the data.
- The
bonding pads 115 are electrically connected with the circuit section. Thebonding pads 115 receive data input to the circuit section from external devices and output data from the circuit section to the external devices. By way of example, signals inputted to the bonding pads may include power supply signals, control signals, address signals, and data signals. - The
fuse boxes 117 function to repair the circuit section. - The first
insulation layer pattern 120 is formed over theupper surface 111 and the side surfaces 113 of thesemiconductor chip 110. For example, as shown inFIG. 2 , an upper surface of the firstinsulation layer pattern 120 may include an upper surface, which is parallel to theupper surface 111 of thesemiconductor chip 110, and side surfaces, which are parallel to the side surfaces 113 of thesemiconductor chip 110. The firstinsulation layer pattern 120 includes first openings corresponding to thebonding pads 115, which expose thebonding pads 115. - The first
insulation layer pattern 120 may comprise, an organic layer containing an organic substance. Alternatively, the firstinsulation layer pattern 120 may comprise an inorganic layer containing an inorganic substance. - In the present embodiment, the first
insulation layer pattern 120, which covers theupper surface 111 and the side surfaces 113 of thesemiconductor chip 110, increases the area for locating theconnection members 150 electrically connected with there-distribution lines 130 as will be described below. As a result, the size of thesemiconductor chip 110 can be reduced while allowing theconnection members 150 to be located according to the international standard of JEDEC. - The
re-distribution lines 130 are formed on the upper surface of the firstinsulation layer pattern 120. In the present embodiment, eachre-distribution line 130 has a firstre-distribution line part 132 and a secondre-distribution line part 134. An end of the firstre-distribution line part 132 is electrically connected with thebonding pad 115, and the secondre-distribution line part 134 extends from the opposite end of the firstre-distribution line part 132 over the upper surface of the firstinsulation layer pattern 120 along an edge thereof, the edge corresponding to theside surface 113 of thesemiconductor chip 110. - The
re-distribution lines 130 may be formed of a conductive material, for example, copper. When there-distribution lines 130 are formed of copper, there-distribution lines 130 may include metal seed patterns, which have substantially the same shape as the re-distribution lines 130. - The second
insulation layer pattern 140 is formed over the firstinsulation layer pattern 120. The secondinsulation layer pattern 140 may comprise an organic layer containing an organic substance. Alternatively, the secondinsulation layer pattern 140 may comprise an inorganic layer containing an inorganic substance. - The second
insulation layer pattern 140 includes openings exposing portions of the firstre-distribution line parts 132 and portions of the secondre-distribution line parts 134. In the present embodiment, the openings are located according to the international standard of JEDEC. - The
connection members 150 are electrically connected with the firstre-distribution line parts 132 and the secondre-distribution line parts 134, which are exposed through the openings defined in the secondinsulation layer pattern 140. Theconnection members 150 may comprise solder balls containing solder. -
FIG. 3 is a plan view of a semiconductor package in accordance with another embodiment of the present invention.FIG. 4 is a cross-sectional view of the semiconductor package ofFIG. 3 , taken along the line II-II′ ofFIG. 3 . - Referring to
FIGS. 3 and 4 , asemiconductor package 200 includes asemiconductor chip 210, a firstinsulation layer pattern 220,re-distribution lines 230, and a secondinsulation layer pattern 240. In addition, thesemiconductor package 200 may includeconnection members 250 containing solder. - The
semiconductor package 200 according to the present embodiment can be applied to a semiconductor chip that does not include a fuse box. - The
semiconductor chip 210 may have the shape of, for example, a rectangular hexahedron, although it should be understood that thesemiconductor chip 210 may have any number of other various shapes. - The
semiconductor chip 210 includes anupper surface 211, alower surface 212 facing away from theupper surface 211, andside surfaces 213 which connect theupper surface 211 and thelower surface 212. - Also, the
semiconductor chip 210 may include a circuit section (not shown) andbonding pads 215. - The circuit section includes a data storage part for storing data and a data processing part for processing data.
- The
bonding pads 215 are electrically connected with the circuit section. Thebonding pads 215 function to input data from external devices to the circuit section or output data from the circuit section to the external devices. Signals that may be input to thebonding pads 215 include, but are not limited to, power supply signals, control signals, address signals, and data signals. In the present embodiment, thebonding pads 215 can, for example, be formed on a central portion of theupper surface 211 of thesemiconductor chip 210. - The first
insulation layer pattern 220 is formed along the side surfaces 213 of thesemiconductor chip 210. The firstinsulation layer pattern 220 formed along the side surfaces 213 of thesemiconductor chip 210 may, for example, may be formed in the shape of a band. In the present embodiment, the firstinsulation layer pattern 220 is not formed on theupper surface 211 of thesemiconductor chip 210, but rather only along the side surfaces 213 of the semiconductor chip as shown inFIG. 4 . - The first
insulation layer pattern 220 includes an upper surface which is, for example, parallel to theupper surface 211 of thesemiconductor chip 210. The thickness of the firstinsulation layer pattern 220 is substantially the same as that of thesemiconductor chip 210. - In the present embodiment, the first
insulation layer pattern 220 may comprise, for example, an organic layer containing an organic substance. Alternatively, the firstinsulation layer pattern 220 may comprise an inorganic layer containing an inorganic substance. As yet another alternative, the firstinsulation layer pattern 220 may be formed of insulating synthetic resin or the like. - In the present embodiment, the first
insulation layer pattern 220, which is formed along the side surfaces 213 and covers the side surfaces 213 of thesemiconductor chip 210, increases the area available for locating theconnection members 250 electrically connected with there-distribution lines 230, as will be described below, allowing theconnection members 250 to be located according to the international standard of JEDEC. - The
re-distribution lines 230 are placed on theupper surface 211 of thesemiconductor chip 210 and the upper surface of the firstinsulation layer pattern 220. In the present embodiment, eachre-distribution line 230 has a firstre-distribution line part 232 and a secondre-distribution line part 234. A first end of the firstre-distribution line part 232 is electrically connected with thebonding pad 215, and the secondre-distribution line part 234 extends from the opposite end of the firstre-distribution line part 232 over the upper surface of the firstinsulation layer pattern 220, which corresponds to the outside of theside surface 213 of thesemiconductor chip 210. - The
re-distribution lines 230 are formed of a conductive material, for example, copper. When there-distribution lines 230 to are formed of copper, there-distribution lines 230 may include metal seed patterns having substantially the same shape as the re-distribution lines 230. - The second
insulation layer pattern 240 is formed over both thesemiconductor chip 210 and the firstinsulation layer pattern 220. The secondinsulation layer pattern 240 may comprise an organic layer containing an organic substance. Alternatively, the secondinsulation layer pattern 240 may comprise an inorganic layer containing an inorganic substance. - The second
insulation layer pattern 240 includes openings defined therein which expose portions of the first andsecond parts - The
connection members 250 are electrically connected with portions of the firstre-distribution line parts 232 and portions of the secondre-distribution line parts 234 which are exposed through the openings defined in the secondinsulation layer pattern 240. For example, theconnection members 250 may comprise solder balls containing solder. -
FIGS. 5 through 7 are a plan view and cross-sectional views illustrating a method for manufacturing the semiconductor package in accordance with one embodiment of the present invention. - Referring to
FIG. 5 , in the manufacture a semiconductor package, the step of locating or placing a plurality ofsemiconductor chips 110 on acarrier substrate 10 is implemented. In the present embodiment, thecarrier substrate 10 may comprise, for example, a dummy wafer. - The semiconductor chips 110 can include circuit sections (not shown and
bonding pads 115, which are electrically connected with the circuit sections. The semiconductor chips 110 may further includefuse boxes 117, which are electrically connected with the circuit sections. - In order to locate or place the semiconductor chips 110 on the
carrier substrate 10, a plurality of semiconductor chips, which are formed on a wafer (not shown), are inspected through an electric die sorting (EDS) process, such that that it may be determined which semiconductor chips are good semiconductor chips and which are bad semiconductor chips, that is, determining which semiconductor chips have sufficiently high quality for a given application. Subsequently, the semiconductor chips are individualized from the wafer through a sawing process. Then, the good semiconductor chips are located or placed on thecarrier substrate 10 using a die pick-up device, etc. At this time, thesemiconductor chips 110 sorted as having good quality can be located on thecarrier substrate 10 in such a way as to adjoin one another. - Referring to
FIG. 6 , after locating thesemiconductor chips 110 sorted as having good quality on thecarrier substrate 10, a first insulation layer (not shown) is formed on thecarrier substrate 10 to cover thesemiconductor chips 110 sorted as having good quality by applying a flowable insulation material on thecarrier substrate 10. - According to an embodiment of the present invention, the first insulation layer may include a photosensitive substance. However, it should be understood that the first insulation layer may also be formed of another material. Then, the flowable insulation material covering the
carrier substrate 10 is baked to form the first insulation layer, which covers thecarrier substrate 10. - The baked first insulation layer is patterned through a patterning process that includes a lithographic process and a development process. Through the patterning process, a first
insulation layer pattern 120 is formed to haveopenings 122 that expose thebonding pads 115 of thesemiconductor chips 110 and also expose portions of thecarrier substrate 10 between the semiconductor chips 110. - Alternatively, the baked first insulation layer may be patterned through a patterning process including a lithographic process and a development process in a manner such that
openings 122 for exposing only thebonding pads 115 of thesemiconductor chips 110 are defined. That is, the firstinsulation layer pattern 120 is formed onupper surfaces 111 of therespective semiconductor chips 110 and is filled in between thesemiconductor chips 110, by which the firstinsulation layer pattern 120 covers side surfaces 113 of the semiconductor chips 110. In the present embodiment, the upper surface of the firstinsulation layer pattern 120 becomes parallel to theupper surfaces 111 of the semiconductor chips 110. - Referring to
FIG. 7 , after the first insulation layer ispattern 120 is formed on thecarrier substrate 10,re-distribution lines 130 are formed over thecarrier substrate 10. - In order to form the
re-distribution lines 130, a metal seed layer (not shown) is formed on the firstinsulation layer pattern 120 and thebonding pads 115 which are exposed through the firstinsulation layer pattern 120. The metal seed layer can be formed, for example, through a sputtering process, and may be formed of a material such as titanium, nickel, vanadium, and copper. - After the metal seed layer is formed on the first
insulation layer pattern 120, photoresist patterns (not shown), which have openings for forming there-distribution lines 130, are formed on the metal seed layer. - After the photoresist patterns are formed, a plating process is conducted on the metal seed layer which is exposed through the openings defined in the photoresist patterns, whereby the
re-distribution lines 130 are formed. In the present embodiment, eachre-distribution line 130 includes a firstre-distribution line part 132 and a secondre-distribution line part 134. A first end of the firstre-distribution line part 132 is electrically connected with thebonding pad 115, and the secondre-distribution line part 134 extends from the opposite end of the firstre-distribution line part 132 along a portion of the upper surface of the firstinsulation layer pattern 120 which corresponds to the outside of theside surface 113 of thesemiconductor chip 110. There-distribution lines 130 may be formed of a conductive material, for example, copper. - After the
re-distribution lines 130 having firstre-distribution line parts 132 and secondre-distribution line parts 134 are formed, a secondinsulation layer pattern 140 is formed on the firstinsulation layer pattern 120. - The second
insulation layer pattern 140 can comprise an organic layer containing an organic substance. The secondinsulation layer pattern 140 has openings corresponding to the first and secondre-distribution line parts re-distribution line parts 132 and the secondre-distribution line parts 134. -
Connection members 150 are electrically connected with there-distribution lines 130 which are exposed through the openings defined in the secondinsulation layer pattern 140. Subsequently, thecarrier substrate 10 is removed from thesemiconductor chips 110, and thesemiconductor chips 110 are individualized, and the individualized semiconductor chips may then be utilized in the manufacture of semiconductor packages. - In the present embodiment, the
connection members 150 may be located outside the side surfaces 113 of the semiconductor chips 110. Due to this fact, theconnection members 150 can be formed on thesemiconductor chips 110 in accordance with the international standard of JEDEC, even when asemiconductor chip 110 has an area which is smaller than that prescribed in JEDEC as the international standard for the location of theconnection members 150. That is, as the reduction of the size of semiconductor chips continues, the surface area of the semiconductor chip becomes too small to form connection members in accordance with the international standard of JEDEC. However, according to an embodiment of the present invention, connection members may be formed in accordance with the international standard of JEDEC even on such semiconductor chips. -
FIG. 8 is a cross-sectional view of a semiconductor package in accordance with another embodiment of the present invention. - Referring to
FIG. 8 , asemiconductor package 900 includes asemiconductor chip 600, achip receiving body 700, andre-distribution lines 800. - The
semiconductor chip 600 has the shape of, for example, a rectangular hexahedron although it should be understood that thesemiconductor chip 600 may also have any number of other various shapes. Thesemiconductor chip 600 having the shape of a rectangular hexahedron has anupper surface 610, alower surface 620 facing away from theupper surface 610, andside surfaces 630 connecting theupper surface 610 and thelower surface 620. - The
semiconductor chip 600 includes a circuit section (not shown) andbonding pads 640. - The circuit section includes a data storage part (not shown) for storing data and a data processing part (not shown) for processing data.
- The
bonding pads 640 are located on theupper surface 610 of thesemiconductor chip 600 and are electrically connected with the circuit section. According to an embodiment of the present invention, thebonding pads 640 may be formed on a central portion of theupper surface 610 of thesemiconductor chip 600. Alternatively, thebonding pads 640 may be located along the edges of theupper surface 610 of thesemiconductor chip 600. - The
chip receiving body 700 includesside walls 710 and abottom plate 720. Theside walls 710 and thebottom plate 720 of thechip receiving body 700 define a space for receiving thesemiconductor chip 600. - In the present embodiment, the
bottom plate 720 has, for example, the shape of a rectangle which is substantially similar to the shape of thesemiconductor chip 600. Theside walls 710 are formed on the side surfaces of thebottom plate 720. In the present embodiment, the side surfaces of thebottom plate 720 contact the inner surfaces of theside walls 710, as shown inFIG. 8 . - In the present embodiment, the
side walls 710 and thebottom plate 720 may be made of any one of metal and synthetic resin. By way of example, thebottom plate 720 may comprise a metal, and theside walls 710 may comprise a synthetic resin. Alternatively, thebottom plate 720 may be made of synthetic resin, and theside walls 710 may be made of metal. As yet another alternative, both theside walls 710 and thebottom plate 720 may be made of synthetic resin, or both theside walls 710 and thebottom plate 720 may be made of metal. - In the present embodiment, the
side walls 710 are made of synthetic resin, and thebottom plate 720 is made of metal. Thebottom plate 720 comprises a metal which has excellent heat conductivity such as, copper, aluminum, silver, or the like. - In the present embodiment, the
semiconductor chip 600 is secured in thechip receiving body 700 including theside walls 710 and thebottom plate 720, by anadhesive member 650 interposed between thebottom plate 720 and thelower surface 620 of thesemiconductor chip 600. Theadhesive member 650 can comprise, for example, epoxy resin or a double-sided adhesive tape. It should be understood that other means of adhesion may also be appropriate for securing thesemiconductor chip 600 within thechip receiving body 700. Theadhesive member 650 may be placed on thelower surface 620 of thesemiconductor chip 600 or the upper surface of thebottom plate 720. - An
insulation layer 660 is formed on theupper surface 610 of thesemiconductor chip 600, which is received in the receiving space of thechip receiving body 700. Theinsulation layer 660 may comprise, for example, an organic layer. Theinsulation layer 660 includes openings exposing thebonding pads 640 formed on theupper surface 610 of thesemiconductor chip 600. In the present embodiment, theinsulation layer 660 is also formed on the upper surfaces of theside walls 710 when theside walls 710 are made of metal. - In the present embodiment, the total thickness of the
bottom plate 720, theadhesive member 650, the semiconductor chip and theinsulation layer 660 is substantially the same as the height of theside walls 710. - The
re-distribution lines 800 have the shape of a line when viewed from above. An end of eachre-distribution line 800 is electrically connected with acorresponding bonding pad 640, which is exposed through the opening of theinsulation layer 660, and the opposite end of eachre-distribution line 800 extends onto the upper surface of theside wall 710. - In the present embodiment, each re-distribution line includes a first and a second
re-distribution line part re-distribution line part 810 being the portion of are-distribution line 800 formed on theupper surface 610 of thesemiconductor chip 600, and the second firstre-distribution line part 820 being the portion of there-distribution line 800 formed on the upper surface of theside wall 710. - The
semiconductor package 900 according to the present embodiment may further include a solder resistpattern 830. The solder resistpattern 830 covers the upper surface of theresultant semiconductor chip 600 and thesidewalls 710 having there-distribution lines 800 formed thereon. The solder resistpattern 830 includes a plurality of openings which expose, for example, portions of the firstre-distribution line parts 810 and the secondre-distribution line parts 820 of the re-distribution lines 800. The openings defined in the solder resistpattern 830 are located according to the international standard of JEDEC. -
Connection members 835 comprising a low melting point metal, such as solder, are located on the portions of the firstre-distribution line parts 810 and the secondre-distribution line parts 820 which are exposed through the openings defined in the solder resistpattern 830. Theconnection members 835 are located according to the international standard of JEDEC. -
FIG. 9 is a cross-sectional view showing a semiconductor package in accordance with still another embodiment of the present invention. - Referring to
FIG. 9 , asemiconductor package 900 includessemiconductor chips chip receiving body 700, andre-distribution lines - The
chip receiving body 700 includesside walls 710 and abottom plate 720. Theside walls 710 and thebottom plate 720 of thechip receiving body 700 define a space for receiving thesemiconductor chips - In the present embodiment, the
bottom plate 720 has the shape of a rectangle, although it should be should understood that other thebottom plate 720 may also have any number of other various shapes. Theside walls 710 are placed on the side surfaces of thebottom plate 720. In the present embodiment, the side surfaces of thebottom plate 720 contact the inner surfaces of theside walls 710. - In the present embodiment, the
side walls 710 and thebottom plate 720 may be made of any one of metal and synthetic resin. For example, thebottom plate 720 may be made of metal, and theside walls 710 may be made of synthetic resin. Alternatively, thebottom plate 720 may be made of synthetic resin, and theside walls 710 may be made of metal. As yet another alternative, both theside walls 710 and thebottom plate 720 may be made of synthetic resin, or both of theside walls 710 and thebottom plate 720 may be made of metal. - In the present embodiment, the
side walls 710 comprise a synthetic resin, and thebottom plate 720 comprises a metal. Thebottom plate 720 is formed of a metal having excellent heat conductivity such as copper, aluminum, or silver. - In the present embodiment, in order to secure the
semiconductor chips chip receiving body 700, anadhesive member 650 is interposed between thebottom plate 720 and thesemiconductor chips adhesive member 650 may comprise epoxy resin or a double-sided adhesive tape. Theadhesive member 650 may be placed on the lower surfaces of thesemiconductor chips adhesive member 650 may be placed on the upper surface of thebottom plate 720. - The plurality of
semiconductor chips bottom plate 720 of thechip receiving body 700. The plurality ofsemiconductor chips bottom plate 720 in the form of a matrix. For example, thesemiconductor chips bottom plate 720 in the form of a 3×1 matrix, a 3×2 matrix, a 3×3 matrix, etc. In the present embodiment, thesemiconductor chips - Hereinbelow, the middle semiconductor chip among the
semiconductor chips bottom plate 720, is defined as afirst semiconductor chip 662, and the semiconductor chips, which are located on the sides of thefirst semiconductor chip 662 are defined as asecond semiconductor chip 664 and athird semiconductor chip 666 respectively. Thefirst semiconductor chip 662 hasfirst bonding pads 663, thesecond semiconductor chip 664 hassecond bonding pads 665, and thethird semiconductor chip 666 hasthird bonding pads 667. - In the present embodiment, the first through
third semiconductor chips third semiconductor chips first semiconductor chip 662 may be a system semiconductor chip, and the second andthird semiconductor chips - Hereinbelow, first
re-distribution lines 830 are electrically connected with thefirst bonding pads 663, secondre-distribution lines 840 are electrically connected with thesecond bonding pads 665, and thirdre-distribution lines 850 are electrically connected with thethird bonding pads 667. - The
first re-distribution lines 830 extend to the upper surfaces of the second andthird semiconductor chips re-distribution lines side walls 710 of thechip receiving body 700. - A solder resist
pattern 835 is formed on first through thirdre-distribution lines pattern 835 which expose portions of the first through thirdre-distribution lines -
Connection members 855 are formed on the portions of the first through thirdre-distribution lines pattern 835. Theconnection members 855 contain a low melting point metal such as solder. -
FIG. 10 is a cross-sectional view showing a semiconductor package in accordance with another embodiment of the present invention. - Referring to
FIG. 10 , asemiconductor package 900 includessemiconductor chips chip receiving body 700, andre-distribution lines semiconductor package 900 may further include a solder resistpattern 830 andconnection members 885. - The
chip receiving body 700 includesside walls 710 and abottom plate 720. - The
side walls 710 and thebottom plate 720 of thechip receiving body 700 define a space for receiving thesemiconductor chips - In the present embodiment, the
bottom plate 720 has, for example, the shape of a rectangle, although it should be understood that the bottom plate may alternatively have another shape. Theside walls 710 are placed on the side surfaces of thebottom plate 720. In the present embodiment, the side surfaces of thebottom plate 720 contact, for example, the inner surfaces of theside walls 710. - In the present embodiment, the
side walls 710 and thebottom plate 720 may be made of any one of metal and synthetic resin. For example, thebottom plate 720 may be made of metal, and theside walls 710 may be made of synthetic resin. Alternatively, thebottom plate 720 may be made of synthetic resin, and theside walls 710 may be made of metal. As yet another alternative, both theside walls 710 and thebottom plate 720 may be made of synthetic resin, or both theside walls 710 and thebottom plate 720 may be made of metal. - In the present embodiment, the
side walls 710 and thebottom plate 720 are made of metal. Thebottom plate 720 is formed of a material which has excellent heat conductivity, for example copper, aluminum, or silver. - In the present embodiment, in order to secure the
semiconductor chip 672 in thechip receiving body 700 including theside walls 710 and thebottom plate 720, anadhesive member 650 is interposed between thebottom plate 720 and thesemiconductor chip 672. Theadhesive member 650 may comprise, for example, epoxy resin or a double-sided adhesive tape. Theadhesive member 650 may be placed on the lower surface of thesemiconductor chip 672 or the upper surface of thebottom plate 720. - The plurality of
semiconductor chips bottom plate 720 of thechip receiving body 700. Hereinbelow, the semiconductor chips, which are stacked on thebottom plate 720, are respectively defined as first throughthird semiconductor chips - The
first semiconductor chip 672 is placed on theadhesive member 650, the second semiconductor chip 674, is placed on thefirst semiconductor chip 672, and thethird semiconductor chip 676 is placed on the second semiconductor chip 674. - The
first semiconductor chip 672 hasfirst bonding pads 673, the second semiconductor chip 674 hassecond bonding pads 675, and thethird semiconductor chip 676 hasthird bonding pads 677. - The
first semiconductor chip 672 has first through-electrodes 672 a, the second semiconductor chip 674 has second through-electrodes 674 a, and thethird semiconductor chips 676 has third through-electrodes 676 a. In the present embodiment, the first through third through-electrodes electrodes - In the present embodiment, the first through
third semiconductor chips third semiconductor chips first semiconductor chip 672 may be a system semiconductor chip, and the second andthird semiconductor chips 674 and 676 may be memory semiconductor chips. - Hereinbelow, first
re-distribution lines 860 are electrically connected with both thefirst bonding pads 673 and the first through-electrodes 672 a, secondre-distribution lines 870 are electrically connected with both thesecond bonding pads 675 and the second through-electrodes 674 a, and thirdre-distribution lines 880 are electrically connected with both thethird bonding pads 677 and the third through-electrodes 676 a. - According to the present embodiment, the
first re-distribution lines 860 are electrically connected with the second through-electrodes 674 a, and thesecond re-distribution lines 870 are electrically connected with the third through-electrodes 676 a. Further, the thirdre-distribution lines 880 are formed to extend over the upper surfaces of theside walls 710 of thechip receiving body 700. - The solder resist
pattern 830 is formed to cover the thirdre-distribution lines 880 which extend over the upper surfaces of theside walls 710. Openings are defined in the solder resistpattern 830 which expose portions of the third re-distribution lines 880. -
Connection members 855 are electrically connected with the portions of the thirdre-distribution lines 880 which are exposed through the openings defined in the solder resistpattern 830. Theconnection members 855 are formed of a low melting point metal, for example solder. - The operation of semiconductor chips results in the generation of heat. For example, as the data processing speed of semiconductor chips in a semiconductor package increases, the amount of heat generated may be such that the semiconductor package fails to operate properly. In the present embodiment, a large amount of heat generated in the semiconductor chips stacked upon one another can be dissipated to the outside through the
side walls 710 and thebottom plate 720 of thechip receiving body 700, such that the data processing speed of thesemiconductor package 900 can be increased. -
FIGS. 11 through 26 are plan views and cross-sectional views showing a method for manufacturing the semiconductor package in accordance with another embodiment of the present invention. -
FIG. 11 is a plan view showing a bottom plate used for manufacturing semiconductor packages according to the present invention.FIG. 12 is a cross-sectional view taken along the line III-III′ ofFIG. 11 . - Referring to
FIGS. 11 and 12 , in order to manufacture semiconductor packages, abottom plate 701 is prepared. In the present embodiment, thebottom plate 701 has the shape of a disc when viewed from above. For example, thebottom plate 701 has the same shape as a wafer, or a circular disc. In the present embodiment, thebottom plate 701 is formed, for example, of a metal having excellent heat conductivity, such as aluminum, aluminum alloy, copper, or copper alloy. Alternatively, thebottom plate 701 may be formed of a synthetic resin. -
FIG. 13 is a plan view showing the defining of through-holes in the bottom plate shown inFIG. 11 .FIG. 14 is a sectional view taken along the line IV-IV′ ofFIG. 13 . - Referring to
FIGS. 13 and 14 , through-holes 703 are defined atregions 702 of thebottom plate 701 where partition walls are to be formed as will be described later, such that the through-holes 703 adjoin one another. Theregions 702 are defined in the form of lattices on thebottom plate 701. The through-holes 703 adjoining one another can be defined in thebottom plate 701, for example, by conducting a pressing process in theregions 702. The through-holes 703 have the shape of slots when viewed from above. -
FIG. 15 is a plan view showing the formation of partition walls on the bottom plate shown inFIG. 13 .FIG. 16 is a to cross-sectional view taken along the line V-V′ ofFIG. 15 . - Referring to
FIGS. 15 and 16 , after the through-holes 703 are defined in thebottom plate 701 as shown inFIG. 13 ,partition walls 715 are formed along theregions 702 shown inFIG. 13 . Receiving spaces are defined on thebottom plate 701 by thepartition walls 715 which are formed to have a predetermined height when measured from the upper surface of thebottom plate 701. In the present embodiment, thepartition walls 715 may be formed by a process including, for example, pouring synthetic resin in molds. Thepartition walls 715 may be arranged in a lattice pattern when viewed from the top. Thepartition walls 715 pass through thebottom plate 701 due to the presence of the through-holes 703. Therefore, the side surfaces of thepartition walls 715 contact the side surfaces of thebottom plate 701. Alternatively, thepartition walls 715 may be formed by arranging metal plates, each having the shape of a rectangular hexahedron, into a lattice pattern within the through-holes 703. - A plurality of
chip mounting regions 704 are defined on thebottom plate 701, by thepartition walls 715 having the lattice pattern. -
FIG. 17 is a plan view showing the formation of the adhesive members in the chip mounting regions shown inFIG. 15 .FIG. 18 is a cross-sectional view taken along the line VI-VI′ ofFIG. 17 . - Referring to
FIGS. 17 and 18 , after thepartition walls 715 are formed on thebottom plate 701,adhesive members 650 are placed in the respectivechip mounting regions 704, which are defined by thepartition walls 715 on thebottom plate 701. Theadhesive members 650 may comprise an adhesive tape or a flowable adhesive containing epoxy. Alternatively, theadhesive members 650, may be placed on the lower surfaces of semiconductor chips, which are subsequently placed in the respectivechip mounting regions 704. -
FIG. 19 is a plan view showing the locating of the semiconductor chips in the chip mounting regions shown inFIG. 18 .FIG. 20 is a cross-sectional view taken along the line VII-VII′ ofFIG. 19 . - Referring to
FIGS. 19 and 20 ,semiconductor chips 600 are located in the respectivechip mounting regions 704 defined by thepartition walls 715 and positioned on thebottom plate 701. Eachsemiconductor chip 600 has anupper surface 610, alower surface 620 which faces away from theupper surface 610, andside surfaces 630 which connect theupper surface 610 and thelower surface 620. Eachsemiconductor chip 600 has the shape of, for example, a rectangular hexahedron, although it should be understood that a semiconductor chip may have any number of other shapes as well. -
Bonding pads 640 are placed on theupper surface 610 of eachsemiconductor chip 600. By way of example, thebonding pads 640 may be placed on a central portion of theupper surface 610 of thesemiconductor chip 600. - The
lower surface 620 of eachsemiconductor chip 600 is placed on thebottom plate 701 and is bonded thereto by anadhesive member 650. In the present embodiment, thepartition walls 715 extend above theupper surfaces 610 of thesemiconductor chips 600 by a predetermined amount. -
FIG. 21 is a plan view showing the formation of an insulation layer on the upper surfaces of the semiconductor chips shown inFIG. 19 .FIG. 22 is a sectional view taken along the line VIII-VIII′ ofFIG. 21 . - Referring to
FIGS. 21 and 22 , after therespective semiconductor chips 600 are attached to theadhesive members 650, aninsulation material 650 is applied on thesemiconductor chips 600, by which aninsulation layer 660 for covering theupper surfaces 610 of the semiconductor chips 600 is formed. - In order to form the
insulation layer 660, aflowable insulation material 665 is applied on theupper surfaces 610 of the semiconductor chips 600. Then theflowable insulation material 665 is uniformly spread by ascraper 667, so as to form aninsulation layer 660 on theupper surfaces 610 of the semiconductor chips 600. In the present embodiment, the total thickness of thebottom plate 701, theadhesive member 650, thesemiconductor chip 600 and theinsulation layer 660 are substantially the same as the height of thepartition wall 715. As an alternative, in the present embodiment, theinsulation layer 660 may be formed on thepartition walls 715 in addition to the semiconductor chips 600. -
FIG. 23 is a plan view showing the patterning of the is insulation layer shown inFIG. 21 .FIG. 24 is a cross-sectional view taken along the line IX-IX′ ofFIG. 23 . - Referring to
FIGS. 23 and 24 , openings exposing thebonding pads 640 are defined by patterning theinsulation layer 660 formed on the semiconductor chips 600. -
FIG. 25 is a cross-sectional view showing re-distribution lines, a solder resist pattern, and connection members, which are formed on the semiconductor chips shown inFIG. 24 . - Referring to
FIG. 25 ,re-distribution lines 800 are formed on thesemiconductor chips 600 and thepartition walls 715. In the present embodiment, an end of eachre-distribution line 800 is electrically connected with acorresponding bonding pad 640 of thesemiconductor chip 600, and the opposite end of eachre-distribution line 800 extends partially or entirely over the upper surface of thepartition wall 715. - A solder resist
pattern 830 covers theupper surfaces 610 of thesemiconductor chips 600 and the upper surfaces of thepartition walls 715. Openings are defined by patterning the solder resistpattern 830. The openings expose first re-distribution line parts of there-distribution lines 800, which correspond to theupper surfaces 610 of thesemiconductor chips 600, and second re-distribution line parts of there-distribution lines 800, which correspond to the upper surfaces of thepartition walls 715. - After the solder resist
pattern 830 is patterned and the openings are defined,connection members 835 are connected to portions of the first and second re-distribution line parts of there-distribution lines 800, which are exposed through the openings defined in the solder resistpattern 830. -
FIG. 26 is a cross-sectional view showing a semiconductor packages formed by cutting the partition walls shown inFIG. 25 . - Referring to
FIG. 26 , after theconnection members 835 are placed on there-distribution lines 800 of thesemiconductor chips 600, thepartition walls 715 are cut, such that,semiconductor packages 900 each havingside walls 710 and abottom plate 720 are manufactured. - Although it was described in the method for manufacturing a semiconductor package according to the present embodiment that each
semiconductor chip 600 is placed in achip mounting region 704 defined by thepartition walls 715, it should be readily understood that a plurality ofsemiconductor chips FIG. 9 . - When the plurality of
semiconductor chips semiconductor chips semiconductor chips - Also, while it was described in the method for manufacturing a semiconductor package according to the present embodiment that each
semiconductor chip 600 is placed in achip mounting region 704 defined by thepartition walls 715, it should be readily understood that a plurality ofsemiconductor chips electrodes FIG. 10 . When the plurality ofsemiconductor chips - When the plurality of
semiconductor chips semiconductor chips semiconductor chips - As is apparent from the above description, in the present invention, as the size of semiconductor chips and semiconductor chip packages decreases, forming connection members according to the international standard of JEDEC becomes increasingly more difficult. According to the present invention, the connection members can be located according to the international standard of JEDEC by forming side walls which cover the side surfaces of the semiconductor chip. Also, according to the present invention the operational characteristics of the semiconductor chip can be improved, because by placing a bottom plate having excellent heat conductivity on the lower surface of the semiconductor chip, heat generated in the semiconductor chip can be rapidly dissipated to the outside.
- Moreover, in the present invention, not only it is possible to satisfy the standard ball layout prescribed in JEDEC, but the number of the connection members in a semiconductor package, which are needed to process data with a high density at a high speed, can be increased.
- Although specific embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions, and substitutions are possible, without departing from the scope and the spirit of the invention as disclosed in the accompanying claims.
Claims (14)
1. A method for manufacturing a wafer level semiconductor package, comprising the steps of:
placing at least two semiconductor chips having bonding pads on a carrier substrate;
forming a first insulation layer pattern on the carrier substrate to cover upper surfaces of the semiconductor chips and side surfaces of the semiconductor chips to expose the bonding pads, wherein the side surfaces of a semiconductor chips are connected with the upper surface of the semiconductor chip;
forming re-distribution lines on the first insulation layer pattern, the re-distribution lines comprising:
first re-distribution line parts connected to corresponding bonding pads; and
second re-distribution line parts extending from the first re-distribution line parts beyond the side surfaces of the semiconductor chips;
forming a second insulation layer pattern on predetermined portions of the first insulation layer pattern such that portions of the first re-distribution line parts and the second re-distribution line parts are exposed; and
individualizing the respective semiconductor chips.
2. The method according to claim 1 , wherein the step of placing the semiconductor chips comprises the steps of:
inspecting semiconductor chips formed on a wafer and determining good semiconductor chips and bad semiconductor chips;
individualizing the good and bad semiconductor chips from the wafer; and
placing the good semiconductor chips on the carrier substrate.
3. The method according to claim 1 , wherein the step of forming the first insulation layer pattern on the carrier substrate comprises the steps of:
applying a flowable insulation material on the carrier substrate and so as to form a first insulation layer covering the semiconductor chips;
baking the first insulation layer; and
patterning the first insulation layer to define openings for exposing the bonding pads and to expose a portion of the carrier substrate between adjacent semiconductor chips.
4. The method according to claim 1 , wherein the step of forming the first insulation layer pattern on the carrier substrate comprises the steps of:
applying a flowable insulation material on the carrier substrate and so as to form a first insulation layer covering the semiconductor chips;
baking the first insulation layer; and
patterning the first insulation layer to define openings for exposing the bonding pads.
5. The method according to claim 1 , further comprising the step of:
placing connection members on the exposed portions of the first re-distribution line parts and the second re-distribution line parts.
6. The method according to claim 1 , wherein, before the step of individualizing the semiconductor chips, the method further comprises the step of:
separating the carrier substrate from the semiconductor chips.
7. A method for manufacturing a semiconductor package, comprising the steps of:
forming partition walls on a bottom plate in a lattice pattern so as to define receiving spaces;
placing good semiconductor chips having bonding pads, in the respective receiving spaces;
forming re-distribution lines having first ends which are electrically connected with the bonding pads and second ends which face away from the first ends and extend over the partition walls; and
cutting the partition walls and the bottom plate to individualize the semiconductor chips.
8. The method according to claim 7 , wherein, after the step of forming the re-distribution lines, the method further comprises the step of:
to forming a solder resist pattern to cover the partition walls and the semiconductor chips, the solder resist pattern having openings for exposing portions of the re-distribution lines.
9. The method according to claim 7 , wherein, before the step of forming the partition walls, the method further comprises the step of:
defining through-holes in partition wall forming regions on the bottom plate by a pressing process.
10. The method according to claim 7 , wherein the bottom plate is made of any one of a metal and synthetic resin and the partition walls are made of any one of a metal and a synthetic resin.
11. The method according to claim 7 , wherein, before the step of forming the re-distribution lines, the method further comprises the steps of:
applying an insulation material on the semiconductor chips so as to form an insulation layer for covering the semiconductor chips; and
patterning the insulation layer to expose the bonding pads.
12. The method according to claim 7 , wherein, in the step of placing the semiconductor chips in the respective receiving spaces defined by the partition walls, two or more semiconductor chips are arranged on the bottom plate in each respective receiving space in the form of a matrix.
13. The method according to claim 7 , wherein, in the step of placing the semiconductor chips in the respective receiving spaces defined by the partition walls, two or more semiconductor chips are sequentially stacked on the bottom plate in each respective receiving space and the two or more semiconductor chips are electrically connected with each other by through-electrodes.
14. The method according to claim 7 , wherein, in the step of placing the semiconductor chips in the respective receiving spaces defined by the partition walls, a semiconductor chip module including a plurality of stacked semiconductor chips, which are electrically connected with one another by through-electrodes, is placed in each respective receiving space.
Priority Applications (1)
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US13/197,249 US20110287584A1 (en) | 2008-03-10 | 2011-08-03 | Semiconductor package having side walls and method for manufacturing the same |
Applications Claiming Priority (6)
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KR1020080021983A KR100959604B1 (en) | 2008-03-10 | 2008-03-10 | Wafer level semiconductor package and method of manufacturing the same |
KR10-2008-0021983 | 2008-03-10 | ||
KR10-2008-0085386 | 2008-08-29 | ||
KR1020080085386A KR101013550B1 (en) | 2008-08-29 | 2008-08-29 | Semiconductor package and method of manufacturing the same |
US12/261,112 US8018043B2 (en) | 2008-03-10 | 2008-10-30 | Semiconductor package having side walls and method for manufacturing the same |
US13/197,249 US20110287584A1 (en) | 2008-03-10 | 2011-08-03 | Semiconductor package having side walls and method for manufacturing the same |
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US12/261,112 Division US8018043B2 (en) | 2008-03-10 | 2008-10-30 | Semiconductor package having side walls and method for manufacturing the same |
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US12/261,112 Expired - Fee Related US8018043B2 (en) | 2008-03-10 | 2008-10-30 | Semiconductor package having side walls and method for manufacturing the same |
US13/197,249 Abandoned US20110287584A1 (en) | 2008-03-10 | 2011-08-03 | Semiconductor package having side walls and method for manufacturing the same |
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KR101195463B1 (en) | 2011-02-15 | 2012-10-30 | 에스케이하이닉스 주식회사 | Semiconductor package and method for forming the same |
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US9263412B2 (en) | 2012-03-09 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging methods and packaged semiconductor devices |
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Also Published As
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US20090224392A1 (en) | 2009-09-10 |
US8018043B2 (en) | 2011-09-13 |
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