US20120267779A1 - Semiconductor package - Google Patents
Semiconductor package Download PDFInfo
- Publication number
- US20120267779A1 US20120267779A1 US13/430,439 US201213430439A US2012267779A1 US 20120267779 A1 US20120267779 A1 US 20120267779A1 US 201213430439 A US201213430439 A US 201213430439A US 2012267779 A1 US2012267779 A1 US 2012267779A1
- Authority
- US
- United States
- Prior art keywords
- conductive
- semiconductor package
- conductive bump
- semiconductor
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/07—Polyamine or polyimide
- H01L2924/07025—Polyimide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
Definitions
- the present invention relates to a semiconductor package, and in particular, to a conductive bump design for a semiconductor package.
- I/O connections For a semiconductor chip package design, an increased amount of input/output (I/O) connections for multi-functional chips is required. The impact of this will be pressure on printed circuit board (PCB) fabricators to minimize linewidth and space or to develop direct chip attach (DCA) semiconductors.
- PCB printed circuit board
- DCA direct chip attach
- the increased amount of input/output connections of a multi-functional chip package may induce thermal electrical problems, for example, problems with heat dissipation, cross talk, signal propagation delay, electromagnetic interference for RF circuits, etc.
- the thermal electrical problems may affect the reliability and quality of products.
- a semiconductor package is provided.
- An exemplary embodiment of a semiconductor package comprises a semiconductor die having a central area and a peripheral area surrounding the central area.
- a first conductive bump is disposed on the semiconductor die in the central area.
- a second conductive bump is disposed on the semiconductor die in the peripheral area, wherein an area ratio of the first conductive bump to the second conductive bump from a top view is larger than 1, and less than or equal to 3.
- FIG. 1 a shows a cross section view of one exemplary embodiment of a semiconductor package of the invention.
- FIG. 1 b shows a schematic view of a layout of conductive bumps of one exemplary embodiment of a semiconductor package of the invention.
- FIG. 2 a shows a cross section view of another exemplary embodiment of a semiconductor package of the invention.
- FIG. 2 b shows a schematic view of a layout of conductive bumps of another exemplary embodiment of a semiconductor package of the invention.
- FIG. 3 a shows a cross section view of yet another exemplary embodiment of a semiconductor package of the invention.
- FIG. 3 b shows a schematic view of a layout of conductive bumps of yet another exemplary embodiment of a semiconductor package of the invention.
- FIG. 4 a shows a cross section view of still yet another exemplary embodiment of a semiconductor package of the invention.
- FIG. 4 b shows a schematic view of a layout of conductive bumps of still yet another exemplary embodiment of a semiconductor package of the invention.
- FIG. 1 a shows a cross section view of one exemplary embodiment of a semiconductor package 500 a of the invention.
- a semiconductor package 500 a is a flip chip package using copper pillars connecting to a semiconductor die and a substrate.
- one exemplary embodiment of a semiconductor package 500 a comprises a semiconductor die 310 having a central area 302 and a peripheral area 304 surrounding the central area 310 .
- the metal pads 202 and 204 belong to the uppermost metal layer of the interconnection structure (not shown) of the semiconductor die 310 .
- the metal pads 204 arranged in the central area 302 are used to transmit ground or power signals of the semiconductor die 310
- the metal pads 202 arranged in the peripheral area 304 are used to transmit signals of the semiconductor die 310 . Therefore, the metal pads 204 may serve as ground or power pads, and the metal pads 202 may serve as signal pads.
- a minimum pitch of the metal pads 204 in the central area 302 may be designed larger than a minimum pitch designed for the metal pads 202 in the peripheral area 304 , which also serves as the minimum pitch for the metal pads of the design rule of the semiconductor package 500 a.
- a first passivation layer 206 is conformably formed covering the metal pads 202 and 204 by a deposition and patterning processes.
- the first passivation layer 206 may comprise oxide, nitride, or oxynitride.
- the first passivation layer 206 has openings on the metal pads 202 and 204 , so that a portion of the metal pads 202 and 204 are respectively exposed from the openings.
- a second passivation layer 208 is formed by a coating patterning and curing process.
- the second passivation layer 208 with openings therethrough may comprise polyimide for providing reliable insulation when the semiconductor die 310 is subjected to various types of environmental stresses.
- a portion of the metal pads 202 and 204 are respectively exposed from the openings of the second passivation layer 208 .
- the metal pads 204 are arranged in the central area 302
- the metal pads 202 are arranged in the peripheral area 304 .
- under bump metallurgy (UBM) layer patterns 210 a and 210 b are formed on the passivation layer 208 by a deposition method such as a sputtering or plating method and a subsequent anisotropic etching process.
- the anisotropic etching process is performed after forming conductive pillars.
- the UBM layer patterns 210 a and 210 b line sidewalls and bottom surfaces of the openings of the passivation layer 208 .
- the UBM layer patterns 210 a are arranged in the central area 302
- the UBM layer patterns 210 b are arranged in the peripheral area 304 .
- the UBM layer patterns 210 a and 210 b extend over a top surface of the passivation layer 208 .
- the UBM layer patterns 210 a and 210 b are composed of a Ti layer and a Cu layer on the Ti layer.
- the UBM layer patterns 210 a arranged in the central area 302 are designed in a shape different from that of the UBM layer patterns 210 b arranged in the peripheral area 304 from the top view.
- the UBM layer patterns 210 a arranged in the central area 302 are designed in a circular shape and the UBM layer patterns 210 b arranged in the peripheral area 304 are designed in a rectangular shape from the top view.
- the conductive pillars 212 a and 212 b are respectively formed on the UBM layer patterns 210 a and 210 b, filling the openings of the passivation layer 208 .
- the conductive pillars 212 a are arranged in the central area 302
- the conductive pillars 212 b are arranged in the peripheral area 304 . Formation positions of the conductive pillars 212 a and 212 b are defined by a dry film photoresist or liquid photoresist patterns (not shown).
- the conductive pillars 212 a and 212 b are used as a solder joint for subsequent conductive bumps, which are used to transmit input/output (I/O), ground or power signals of the semiconductor die 310 , disposed thereon. Therefore, the conductive pillars 212 a and 212 b may help to increase the mechanical strength of the bump structure. In one embodiment, the conductive pillars 212 a and 212 b may be formed of copper, so that deformation may be prevented during a subsequent solder re-flow process.
- conductive buffer layers 214 a and 214 b are formed on the conductive pillars 212 a and 212 b by an electroplating method.
- the conductive buffer layers 214 a are arranged in the central area 302
- the conductive buffer layers 214 b are arranged in the peripheral area 304 .
- the conductive buffer layer 240 is an optional element serving as a seed layer, an adhesion layer and a barrier layer for a subsequent conductive bump formed thereon.
- the conductive buffer layers 214 a and 214 b may comprise Ni.
- conductive bumps 216 a and 216 b are respectively formed on the conductive buffer layers 214 a and 214 b by electroplating a solder with a patterned photoresist layer or by a screen printing process and a subsequent solder re-flow process.
- the conductive bumps 216 a are arranged in the central area 302
- the conductive bumps 216 b are arranged in the peripheral area 304 .
- the conductive bumps 216 a electrically connect to the metal pads 204 , which are used to transmit ground or power signals of the semiconductor die 310
- the conductive bumps 216 b electrically connect to the metal pads 202 , which are used to transmit signals of the semiconductor die 310
- the conductive pillars 212 a / 212 b, the overlying conductive bumps 216 a / 216 b and the conductive buffer layers 214 a / 214 b (optional) therebetween collectively form bump structures.
- the semiconductor die 310 and the bump structures collectively form a semiconductor package 500 a.
- FIG. 1 b shows a schematic view of a layout 600 a of conductive bumps 216 a and 216 b of one exemplary embodiment of the semiconductor package 500 a of the invention.
- an area A 1 of each of the conductive bumps 216 a arranged in the central area 302 is designed to be larger than an area A 2 of the conductive bumps 216 b arranged in the peripheral area 304 to increase thermal conductivity and reduce electrical resistively, thereby improving thermal and electrical properties of the semiconductor package 500 .
- FIGS. 1 b shows a schematic view of a layout 600 a of conductive bumps 216 a and 216 b of one exemplary embodiment of the semiconductor package 500 a of the invention.
- an area A 1 of each of the conductive bumps 216 a arranged in the central area 302 is designed to be larger than an area A 2 of the conductive bumps 216 b arranged in the peripheral area 304 to increase thermal conductivity and reduce electrical resistively, thereby improving thermal and electrical properties of the semiconductor package 500
- an area ratio A 1 /A 2 of each of the conductive bumps 216 a to each of the conductive bumps 216 b from a top view is larger than 1, and less than or equal to 3.
- the area ratio A 1 /A 2 of each of the conductive bumps 216 a to each of the conductive bumps 216 b from a top view is substantially equal to 1.5.
- the conductive bumps 216 a arranged in the central area 302 are designed in a shape different from that of the conductive bumps 216 b arranged in the peripheral area 304 from the top view.
- the conductive bumps 216 a are designed in a circular shape and the conductive bumps 216 b are designed in an oblong shape from the top view.
- the conductive pillars 212 a arranged in the central area 302 are designed in a shape substantially the same at that of the conductive bumps 216 a.
- the conductive pillars 212 b arranged in the peripheral area 304 are designed in a shape substantially the same at that of the conductive bumps 216 b from the top view.
- the conductive pillars 212 a are designed in a circular shape and the conductive pillars 212 b are designed in an oblong shape from the top view.
- an area of each of the conductive pillars 212 a arranged in the central area 302 is designed substantially the same at that of the area A 1 of each the conductive bumps 216 a.
- An area of each of the conductive pillars 212 b arranged in the peripheral area 304 is designed substantially the same at that of the area A 2 of each of the conductive bumps 216 b from the top view. Therefore, in one embodiment as shown in FIGS. 1 and 2 , an area ratio A 1 /A 2 of each of the conductive pillars 212 a to each of the conductive pillars 212 b from a top view is larger than 1, and less than or equal to 3. In this embodiment, the area ratio A 1 /A 2 of each of the conductive pillars 212 a to each of the conductive pillars 212 b from a top view is substantially equal to 1.5.
- the semiconductor package 500 a can be bonded to a substrate 300 , for example, a print circuit board (PCB), as shown in FIG. 1 a .
- a substrate 300 for example, a print circuit board (PCB), as shown in FIG. 1 a .
- an underfill material 224 may optionally fill a space between the semiconductor package 500 a and the substrate 300 .
- the substrate 300 has conductive traces 230 a and 230 b disposed thereon. In this embodiment, the conductive traces 230 a are arranged in the central area 302 , and the conductive traces 230 b are arranged in the peripheral area 304 .
- the substrate 200 may be formed of by semiconductor materials such as silicon, or organic materials such as bismaleimide triacine, (BT), polyimide or ajinomoto build-up film (ABF).
- the conductive traces 230 a arranged in the central area 302 may be designed as ground/power trace segments
- the second conductive traces 230 b arranged in the peripheral area 304 may be designed as signal trace segments for routing.
- the conductive traces 230 a and 230 b are used for input/output (I/O) connections of a semiconductor die 310 mounted directly onto the substrate 200 . Therefore, each of the conductive traces 230 a and 230 b has a portion serving as a pad region of the substrate 200 .
- 1 b also shows a relationship between the conductive traces 230 a / 230 b and the conductive bumps 216 a / 216 b of one exemplary embodiment of the semiconductor package 500 of the invention. Terminal portions of the conductive traces 230 a overlap with the conductive bumps 216 a in the central area 302 , and terminal portions of the conductive traces 230 b overlap with the conductive bumps 216 b in the peripheral area 304 .
- FIG. 2 a shows a cross section view of another exemplary embodiment of a semiconductor package 500 b of the invention.
- FIG. 2 b shows a schematic view of a layout 600 b of conductive bumps of another exemplary embodiment of a semiconductor package 500 b of the invention. Elements of this embodiment which are the same as those previously described in FIGS. 1 a and 1 b , are not repeated for brevity. Differences between the semiconductor packages 500 a and 500 b (the layouts 600 a and 600 b ) are that the metal pads 204 of the semiconductor package 500 b for power/ground connections are arranged in the peripheral area 304 . Also, the metal pads 202 of the semiconductor package 500 b for power/ground connections are arranged in the central area 302 .
- the metal pads 202 and 204 can be arranged both in the the central area 302 and the peripheral area 304 . Also, the metal pads 202 and 204 can be alternatively arranged in the central area 302 or the peripheral area 304 .
- FIG. 3 a shows a cross section view of yet another exemplary embodiment of a semiconductor package 500 c of the invention.
- FIG. 3 b shows a schematic view of a layout 600 c of conductive bumps of yet another exemplary embodiment of a semiconductor package 500 c of the invention. Elements of this embodiment which are the same as those previously described in FIGS. 1 a and 1 b , are not repeated for brevity.
- the metal pads adjacent to any one of the metal pads 202 are the metal pads 204 .
- the metal pads adjacent to any one of the metal pads 204 are the metal pads 202 .
- the metal pads 202 and 204 can be arranged both in the central area 302 and the peripheral area 304 . Also, the metal pads 202 and 204 can be randomly arranged in the central area 302 or the peripheral area 304 .
- FIG. 4 a shows a cross section view of still yet another exemplary embodiment of a semiconductor package 500 d of the invention.
- FIG. 4 b shows a schematic view of a layout 600 d of conductive bumps of still yet another exemplary embodiment of a semiconductor package 500 d of the invention. Elements of this embodiment which are the same as those previously described in FIGS. 1 a and 1 b , are not repeated for brevity.
- any one of the metal pads 202 can be adjacent to the metal pads 202 or 204 .
- any one of the metal pads 204 can be adjacent to the metal pads 202 or 204 .
- Exemplary embodiments provide a semiconductor package.
- the semiconductor package is designed to arrange conductive bumps with two different areas (sizes) in one semiconductor package. Because the power/ground connections of the semiconductor chip 301 has a number much less than the signal connections, a minimum pitch of the metal pads 204 for power/ground connections may be designed larger than a minimum pitch designed for the metal pads 202 for signal connections.
- An area A 1 of each of the conductive bumps 216 a connecting the metal pads 204 is designed to be larger than an area A 2 of the conductive bumps 216 b connecting the metal pads 202 to increase thermal conductivity and reduce electrical resistively, thereby improving thermal and electrical properties of the semiconductor package 500 . In one embodiment as shown in FIGS.
- an area ratio A 1 /A 2 of each of the conductive bumps 216 a to each of the conductive bumps 216 b from a top view is larger than 1, and less than or equal to 3.
- the area ratio A 1 /A 2 of each of the conductive bumps 216 a to each of the conductive bumps 216 b from a top view is substantially equal to 1.5.
- the conductive bumps 216 a arranged in the central area 302 are designed in a shape different from that of the conductive bumps 216 b arranged in the peripheral area 304 from the top view.
Abstract
The invention provides a semiconductor package. The semiconductor package includes a semiconductor die having a central area and a peripheral area surrounding the central area. A first conductive bump is disposed on the semiconductor die in the central area. A second conductive bump is disposed on the semiconductor die in the peripheral area. An area ratio of the first conductive bump to the second conductive bump from a top view is larger than 1, and less than or equal to 3.
Description
- This application claims the benefit of U.S. Provisional Application No. 61/498,791 filed Apr. 25, 2011, the entirety of which is incorporated by reference herein.
- 1. Field of the Invention
- The present invention relates to a semiconductor package, and in particular, to a conductive bump design for a semiconductor package.
- 2. Description of the Related Art
- For a semiconductor chip package design, an increased amount of input/output (I/O) connections for multi-functional chips is required. The impact of this will be pressure on printed circuit board (PCB) fabricators to minimize linewidth and space or to develop direct chip attach (DCA) semiconductors. However, the increased amount of input/output connections of a multi-functional chip package may induce thermal electrical problems, for example, problems with heat dissipation, cross talk, signal propagation delay, electromagnetic interference for RF circuits, etc. The thermal electrical problems may affect the reliability and quality of products.
- Thus, a novel semiconductor package with better thermal and electrical properties is desirable.
- A semiconductor package is provided. An exemplary embodiment of a semiconductor package comprises a semiconductor die having a central area and a peripheral area surrounding the central area. A first conductive bump is disposed on the semiconductor die in the central area. A second conductive bump is disposed on the semiconductor die in the peripheral area, wherein an area ratio of the first conductive bump to the second conductive bump from a top view is larger than 1, and less than or equal to 3.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIG. 1 a shows a cross section view of one exemplary embodiment of a semiconductor package of the invention. -
FIG. 1 b shows a schematic view of a layout of conductive bumps of one exemplary embodiment of a semiconductor package of the invention. -
FIG. 2 a shows a cross section view of another exemplary embodiment of a semiconductor package of the invention. -
FIG. 2 b shows a schematic view of a layout of conductive bumps of another exemplary embodiment of a semiconductor package of the invention. -
FIG. 3 a shows a cross section view of yet another exemplary embodiment of a semiconductor package of the invention. -
FIG. 3 b shows a schematic view of a layout of conductive bumps of yet another exemplary embodiment of a semiconductor package of the invention. -
FIG. 4 a shows a cross section view of still yet another exemplary embodiment of a semiconductor package of the invention. -
FIG. 4 b shows a schematic view of a layout of conductive bumps of still yet another exemplary embodiment of a semiconductor package of the invention. - The following description is a mode for carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims. Wherever possible, the same reference numbers are used in the drawings and the descriptions to refer the same or like parts.
- The present invention will be described with respect to particular embodiments and with reference to certain drawings, but the invention is not limited thereto and is only limited by the claims. The drawings described are only schematic and are non-limiting. In the drawings, the size of some of the elements may be exaggerated and not drawn to scale for illustrative purposes. The dimensions and the relative dimensions do not correspond to actual dimensions to practice the invention.
-
FIG. 1 a shows a cross section view of one exemplary embodiment of asemiconductor package 500 a of the invention. One exemplary embodiment of asemiconductor package 500 a is a flip chip package using copper pillars connecting to a semiconductor die and a substrate. As shown inFIG. 1 a, one exemplary embodiment of asemiconductor package 500 a comprises asemiconductor die 310 having acentral area 302 and aperipheral area 304 surrounding thecentral area 310. Themetal pads semiconductor die 310. In this embodiment, themetal pads 204 arranged in thecentral area 302 are used to transmit ground or power signals of thesemiconductor die 310, and themetal pads 202 arranged in theperipheral area 304 are used to transmit signals of thesemiconductor die 310. Therefore, themetal pads 204 may serve as ground or power pads, and themetal pads 202 may serve as signal pads. In one embodiment, a minimum pitch of themetal pads 204 in thecentral area 302 may be designed larger than a minimum pitch designed for themetal pads 202 in theperipheral area 304, which also serves as the minimum pitch for the metal pads of the design rule of thesemiconductor package 500 a. - As shown in
FIG. 1 a, afirst passivation layer 206 is conformably formed covering themetal pads first passivation layer 206 may comprise oxide, nitride, or oxynitride. Thefirst passivation layer 206 has openings on themetal pads metal pads second passivation layer 208 is formed by a coating patterning and curing process. In one embodiment, thesecond passivation layer 208 with openings therethrough may comprise polyimide for providing reliable insulation when thesemiconductor die 310 is subjected to various types of environmental stresses. A portion of themetal pads second passivation layer 208. In this embodiment, themetal pads 204 are arranged in thecentral area 302, and themetal pads 202 are arranged in theperipheral area 304. - As shown in
FIG. 1 a, under bump metallurgy (UBM)layer patterns passivation layer 208 by a deposition method such as a sputtering or plating method and a subsequent anisotropic etching process. The anisotropic etching process is performed after forming conductive pillars. Meanwhile, the UBM layer patterns 210 a and 210 b line sidewalls and bottom surfaces of the openings of thepassivation layer 208. In this embodiment, theUBM layer patterns 210 a are arranged in thecentral area 302, and theUBM layer patterns 210 b are arranged in theperipheral area 304. Also, theUBM layer patterns passivation layer 208. In one embodiment, theUBM layer patterns UBM layer patterns 210 a arranged in thecentral area 302 are designed in a shape different from that of theUBM layer patterns 210 b arranged in theperipheral area 304 from the top view. For example, theUBM layer patterns 210 a arranged in thecentral area 302 are designed in a circular shape and theUBM layer patterns 210 b arranged in theperipheral area 304 are designed in a rectangular shape from the top view. - As shown in
FIG. 1 a, theconductive pillars UBM layer patterns passivation layer 208. In this embodiment, theconductive pillars 212 a are arranged in thecentral area 302, and theconductive pillars 212 b are arranged in theperipheral area 304. Formation positions of theconductive pillars conductive pillars semiconductor die 310, disposed thereon. Therefore, theconductive pillars conductive pillars - As shown in
FIG. 1 a, conductive buffer layers 214 a and 214 b are formed on theconductive pillars central area 302, and the conductive buffer layers 214 b are arranged in theperipheral area 304. In one embodiment, the conductive buffer layer 240 is an optional element serving as a seed layer, an adhesion layer and a barrier layer for a subsequent conductive bump formed thereon. In one embodiment, the conductive buffer layers 214 a and 214 b may comprise Ni. - As shown in
FIG. 1 a,conductive bumps conductive bumps 216 a are arranged in thecentral area 302, and theconductive bumps 216 b are arranged in theperipheral area 304. In one embodiment, theconductive bumps 216 a electrically connect to themetal pads 204, which are used to transmit ground or power signals of the semiconductor die 310, and theconductive bumps 216 b electrically connect to themetal pads 202, which are used to transmit signals of the semiconductor die 310. In one embodiment of the invention, theconductive pillars 212 a/212 b, the overlyingconductive bumps 216 a/216 b and the conductive buffer layers 214 a/214 b (optional) therebetween, collectively form bump structures. Additionally, the semiconductor die 310 and the bump structures collectively form asemiconductor package 500 a. -
FIG. 1 b shows a schematic view of alayout 600 a ofconductive bumps semiconductor package 500 a of the invention. As shown inFIGS. 1 a and 1 b, it is noted that an area A1 of each of theconductive bumps 216 a arranged in thecentral area 302 is designed to be larger than an area A2 of theconductive bumps 216 b arranged in theperipheral area 304 to increase thermal conductivity and reduce electrical resistively, thereby improving thermal and electrical properties of the semiconductor package 500. In one embodiment as shown inFIGS. 1 and 2 , an area ratio A1/A2 of each of theconductive bumps 216 a to each of theconductive bumps 216 b from a top view is larger than 1, and less than or equal to 3. In this embodiment, the area ratio A1/A2 of each of theconductive bumps 216 a to each of theconductive bumps 216 b from a top view is substantially equal to 1.5. In one embodiment, theconductive bumps 216 a arranged in thecentral area 302 are designed in a shape different from that of theconductive bumps 216 b arranged in theperipheral area 304 from the top view. For example, theconductive bumps 216 a are designed in a circular shape and theconductive bumps 216 b are designed in an oblong shape from the top view. Further, theconductive pillars 212 a arranged in thecentral area 302 are designed in a shape substantially the same at that of theconductive bumps 216 a. Theconductive pillars 212 b arranged in theperipheral area 304 are designed in a shape substantially the same at that of theconductive bumps 216 b from the top view. Accordingly, theconductive pillars 212 a are designed in a circular shape and theconductive pillars 212 b are designed in an oblong shape from the top view. Moreover, an area of each of theconductive pillars 212 a arranged in thecentral area 302 is designed substantially the same at that of the area A1 of each theconductive bumps 216 a. An area of each of theconductive pillars 212 b arranged in theperipheral area 304 is designed substantially the same at that of the area A2 of each of theconductive bumps 216 b from the top view. Therefore, in one embodiment as shown inFIGS. 1 and 2 , an area ratio A1/A2 of each of theconductive pillars 212 a to each of theconductive pillars 212 b from a top view is larger than 1, and less than or equal to 3. In this embodiment, the area ratio A1/A2 of each of theconductive pillars 212 a to each of theconductive pillars 212 b from a top view is substantially equal to 1.5. - Additionally, the
semiconductor package 500 a can be bonded to asubstrate 300, for example, a print circuit board (PCB), as shown inFIG. 1 a. In one embodiment, anunderfill material 224 may optionally fill a space between thesemiconductor package 500 a and thesubstrate 300. In one embodiment, thesubstrate 300 hasconductive traces central area 302, and theconductive traces 230 b are arranged in theperipheral area 304. In one embodiment, the substrate 200 may be formed of by semiconductor materials such as silicon, or organic materials such as bismaleimide triacine, (BT), polyimide or ajinomoto build-up film (ABF). In one embodiment, the conductive traces 230 a arranged in thecentral area 302 may be designed as ground/power trace segments, and the secondconductive traces 230 b arranged in theperipheral area 304 may be designed as signal trace segments for routing. Also, the conductive traces 230 a and 230 b are used for input/output (I/O) connections of asemiconductor die 310 mounted directly onto the substrate 200. Therefore, each of theconductive traces FIG. 1 b also shows a relationship between theconductive traces 230 a/230 b and theconductive bumps 216 a/216 b of one exemplary embodiment of the semiconductor package 500 of the invention. Terminal portions of theconductive traces 230 a overlap with theconductive bumps 216 a in thecentral area 302, and terminal portions of theconductive traces 230 b overlap with theconductive bumps 216 b in theperipheral area 304. - In another embodiment, positions of the
metal pads FIG. 2 a shows a cross section view of another exemplary embodiment of asemiconductor package 500 b of the invention.FIG. 2 b shows a schematic view of alayout 600 b of conductive bumps of another exemplary embodiment of asemiconductor package 500 b of the invention. Elements of this embodiment which are the same as those previously described inFIGS. 1 a and 1 b, are not repeated for brevity. Differences between the semiconductor packages 500 a and 500 b (thelayouts metal pads 204 of thesemiconductor package 500 b for power/ground connections are arranged in theperipheral area 304. Also, themetal pads 202 of thesemiconductor package 500 b for power/ground connections are arranged in thecentral area 302. - In yet another embodiment, the
metal pads central area 302 and theperipheral area 304. Also, themetal pads central area 302 or theperipheral area 304.FIG. 3 a shows a cross section view of yet another exemplary embodiment of asemiconductor package 500 c of the invention.FIG. 3 b shows a schematic view of alayout 600 c of conductive bumps of yet another exemplary embodiment of asemiconductor package 500 c of the invention. Elements of this embodiment which are the same as those previously described inFIGS. 1 a and 1 b, are not repeated for brevity. As shown inFIGS. 3 a and 3 b, the metal pads adjacent to any one of themetal pads 202 are themetal pads 204. Also, the metal pads adjacent to any one of themetal pads 204 are themetal pads 202. - In still yet another embodiment, the
metal pads central area 302 and theperipheral area 304. Also, themetal pads central area 302 or theperipheral area 304.FIG. 4 a shows a cross section view of still yet another exemplary embodiment of asemiconductor package 500 d of the invention.FIG. 4 b shows a schematic view of a layout 600 d of conductive bumps of still yet another exemplary embodiment of asemiconductor package 500 d of the invention. Elements of this embodiment which are the same as those previously described inFIGS. 1 a and 1 b, are not repeated for brevity. As shown inFIGS. 4 a and 4 b, any one of themetal pads 202 can be adjacent to themetal pads metal pads 204 can be adjacent to themetal pads - Exemplary embodiments provide a semiconductor package. The semiconductor package is designed to arrange conductive bumps with two different areas (sizes) in one semiconductor package. Because the power/ground connections of the semiconductor chip 301 has a number much less than the signal connections, a minimum pitch of the
metal pads 204 for power/ground connections may be designed larger than a minimum pitch designed for themetal pads 202 for signal connections. An area A1 of each of theconductive bumps 216 a connecting themetal pads 204 is designed to be larger than an area A2 of theconductive bumps 216 b connecting themetal pads 202 to increase thermal conductivity and reduce electrical resistively, thereby improving thermal and electrical properties of the semiconductor package 500. In one embodiment as shown inFIGS. 1 a and 1 b, an area ratio A1/A2 of each of theconductive bumps 216 a to each of theconductive bumps 216 b from a top view is larger than 1, and less than or equal to 3. In this embodiment, the area ratio A1/A2 of each of theconductive bumps 216 a to each of theconductive bumps 216 b from a top view is substantially equal to 1.5. In one embodiment, theconductive bumps 216 a arranged in thecentral area 302 are designed in a shape different from that of theconductive bumps 216 b arranged in theperipheral area 304 from the top view. - While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Claims (18)
1. A semiconductor package, comprising:
a semiconductor die; and
a first conductive bump and a second conductive bump respectively disposed on the semiconductor die, wherein an area ratio of the first conductive bump to the second conductive bump from a top view is larger than 1, and less than or equal to 3.
2. The semiconductor package as claimed in claim 1 , wherein the semiconductor die has a central area and a peripheral area surrounding the central area, and wherein the first conductive bump is disposed on the semiconductor die in the central area, and the second conductive bump is disposed on the semiconductor die in the peripheral area.
3. The semiconductor package as claimed in claim 1 , wherein the semiconductor die has a central area and a peripheral area surrounding the central area, and wherein the first conductive bump is disposed on the semiconductor die in the peripheral area, and the second conductive bump is disposed on the semiconductor die in the central area.
4. The semiconductor package as claimed in claim 1 , wherein the first conductive bump and the second conductive bump are alternatively disposed on the semiconductor die.
5. The semiconductor package as claimed in claim 1 , wherein the first conductive bump and the second conductive bump are randomly disposed on the semiconductor die.
6. The semiconductor package as claimed in claim 1 , wherein the first conductive bump is a circular shape from the top view.
7. The semiconductor package as claimed in claim 1 , wherein the second conductive bump is an oblong shape from the top view.
8. The semiconductor package as claimed in claim 1 , wherein the first conductive bump connects to a power pad or ground pad of the semiconductor die.
9. The semiconductor package as claimed in claim 1 , wherein the second conductive bump connects to a signal pad of the semiconductor die.
10. The semiconductor package as claimed in claim 1 , further comprising:
a first under bump metallurgy layer pattern disposed between the semiconductor die and the first conductive bump; and
a second under bump metallurgy layer pattern disposed between the semiconductor die and the second conductive bump.
11. The semiconductor package as claimed in claim 10 , wherein the first under bump metallurgy layer pattern is a circular shape from the top view.
12. The semiconductor package as claimed in claim 10 , wherein the second under bump metallurgy layer pattern is a rectangular shape from the top view.
13. The semiconductor package as claimed in claim 10 , further comprising:
a first conductive pillar connecting to and between the first under bump metallurgy layer pattern and the first conductive bump; and
a second conductive pillar connecting to and between the second under bump metallurgy layer pattern and the second conductive bump.
14. The semiconductor package as claimed in claim 13 , wherein the first conductive pillar is a circular shape.
15. The semiconductor package as claimed in claim 13 , wherein the second conductive pillar is an oblong shape from the top view.
16. The semiconductor package as claimed in claim 13 , wherein an area ratio the first conductive pillar to the second conductive pillar from a top view is larger than 1, and less than or equal to 3.
17. The semiconductor package as claimed in claim 1 , further comprising a substrate having a plurality of conductive traces thereon, wherein the first conductive bump and the second conductive bump are bonded onto the conductive traces, respectively.
18. The semiconductor package as claimed in claim 1 , further comprising:
a solder resistance layer disposed on the substrate, away from an overlap region between the substrate and the semiconductor die; and
an underfill material filling a gap between the substrate and the semiconductor
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CN2012101209335A CN102760712A (en) | 2011-04-25 | 2012-04-23 | Semiconductor package |
TW101114477A TWI543313B (en) | 2011-04-25 | 2012-04-24 | Semiconductor package |
US15/189,369 US10109608B2 (en) | 2011-04-25 | 2016-06-22 | Semiconductor package |
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US201161478791P | 2011-04-25 | 2011-04-25 | |
US13/430,439 US20120267779A1 (en) | 2011-04-25 | 2012-03-26 | Semiconductor package |
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US15/189,369 Continuation US10109608B2 (en) | 2011-04-25 | 2016-06-22 | Semiconductor package |
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Also Published As
Publication number | Publication date |
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TW201244032A (en) | 2012-11-01 |
US10109608B2 (en) | 2018-10-23 |
US20160307863A1 (en) | 2016-10-20 |
CN102760712A (en) | 2012-10-31 |
TWI543313B (en) | 2016-07-21 |
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