US20130181266A1 - Semiconductor device and method of fabricating the same - Google Patents
Semiconductor device and method of fabricating the same Download PDFInfo
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- US20130181266A1 US20130181266A1 US13/768,932 US201313768932A US2013181266A1 US 20130181266 A1 US20130181266 A1 US 20130181266A1 US 201313768932 A US201313768932 A US 201313768932A US 2013181266 A1 US2013181266 A1 US 2013181266A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 description 45
- 238000000034 method Methods 0.000 description 37
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 229910003481 amorphous carbon Inorganic materials 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000059 patterning Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- PLEZGBHMSVTPPQ-UHFFFAOYSA-N [O-2].[Ra+2] Chemical compound [O-2].[Ra+2] PLEZGBHMSVTPPQ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Definitions
- the disclosure relates to a method of fabricating a semiconductor device, and more particularly, to a semiconductor device in which channels are formed in a vertical direction and to a method of fabricating such device.
- a semiconductor device with channels formed in an up and down direction relative to the substrate of the device (referred to herein as vertical channels), and capable of implementing a configuration of 4F 2 , has been known to the inventors as one method of improving cell efficiency.
- FIG. 1 is a schematic cross-sectional view of a known conventional semiconductor device with vertical channels.
- the known semiconductor device includes a substrate 10 , a pillar pattern having a pillar head 11 and a pillar neck 12 , a gate hard mask layer 13 for protecting an upper portion of the pillar pattern, a side wall protection layer 14 for protecting a side wall of the pillar head 11 , a gate insulation layer 15 surrounding the pillar neck 12 and a gate electrode 16 . Furthermore, source and drain regions may be formed on the substrate 10 and the pillar head 11 , and a vertical channel may be formed in the pillar neck 12 to selectively connect the regions.
- a diameter of the pillar neck 12 is smaller than a diameter of the pillar head 11 and a gate hard mask layer 13 is placed over the pillar head 11 in the above configuration of the pillar pattern, it is potential that a pillar pattern may leans over or adheres to another pillar pattern, as shown in FIG. 2 .
- the pillar head 11 and pillar neck 12 are formed by etching without an etch stop layer, it is potential that the heights of respective pillar patterns are not even such as H1 ⁇ H2. This results in different channel lengths in different pillar patterns, as shown in FIG. 3 .
- voids 21 and seams are potentially formed inside the conductive layer due to a high aspect ratio between the pillar patterns, as shown in FIG. 4 .
- the gate insulation layer 15 and the substrate 17 are potentially punched through (see 22 of FIG. 5 ) due to different etching speeds originating from the presence of the aforementioned voids 21 and seams.
- the side wall protection layer 14 is possibly lost excessively due to an inappropriate etching selection ratio during the conductive layer patterning process, which attacks the pillar head 11 , as shown in FIG. 6 (see 23 of FIG. 6 ).
- a method of fabricating a semiconductor device on a substrate having thereon a conductive layer comprises: patterning the conductive layer to form a plurality of opened regions; forming a gate insulation layer on a side wall of each of the opened regions; forming a pillar pattern in each opened region; and forming on each pillar pattern a gate electrode, which encloses said pillar pattern, by removing the conductive layer between the pillar patterns.
- a method of fabricating a semiconductor device comprises: sequentially forming a first etch stop layer, a conductive layer, a second etch stop layer, and a plurality of hard mask layer patterns on a substrate; forming a plurality of opened regions by etching the second etch stop layer, the conductive layer and the first etch stop layer using the hard mask layer patterns as an etching barrier; forming a gate insulation layer on a side wall of each of the opened regions; forming a pillar pattern inside each opened region; forming a gate hard mask layer pattern covering each pillar pattern and a portion of the conductive layer surrounding said pillar pattern; and forming on each pillar pattern a gate electrode from said portion of the conductive layer by etching portions of the conductive layer between the pillar patterns using the gate hard mask layer pattern as an etching barrier.
- a semiconductor device comprises: a substrate having at least one pillar pattern grown thereon, a gate insulation layer extending around and covering a side wall of the at least one pillar pattern, a gate electrode extending around and partially covering the gate insulation layer, and a side wall protection layer positioned above the gate electrode, extending around and partially covering the gate insulation layer.
- FIG. 1 is a schematic cross-sectional view of a known semiconductor device with vertical channels.
- FIGS. 2-6 are electron microscopic pictures showing various defects that can occur in the known semiconductor device.
- FIGS. 7A to 7J are schematic views that illustrate a method of fabricating a semiconductor device with vertical channels in accordance with various embodiments.
- a layer when a layer is referred to as being “on/under” another layer or substrate, it can be directly on/under the other layer or substrate, or intervening layers may also be present. In addition, when a layer is referred to as being ‘between’ two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
- FIGS. 7A to 7J describe a method of fabricating a semiconductor device with vertical channels in accordance with various embodiments.
- a first insulation layer 32 , a conductive layer 33 , a second insulation layer 34 and a hard mask layer 35 are formed sequentially on a substrate 31 , such as .
- the conductive layer 33 is a thin layer which will serve as a gate electrode, and comprises at least one thin layer of a material selected from the group consisting of polysilicon, tungsten silicide (WSi 2 ), titanium silicide (TiSi 2 ), tungsten (W), titanium nitride (TiN), tantalum (Ta) and tantalum nitride (TaN).
- the conductive layer 33 in some embodiments has a stacked configuration of a tungsten layer and a titanium nitride layer, or a tungsten layer, a titanium nitride layer and a polysilicon layer.
- the first insulation layer 32 is a thin layer for insulating between the substrate 31 and the conductive layer 33 and defining an etch stop layer in a subsequent etching process.
- the second insulation layer 34 is a thin layer for insulating between the conductive layer 33 and the hard mask layer 35 and defining another etch stop layer in a subsequent etching process.
- the first insulation layer 32 and/or the second insulation layer 34 comprise(s) any one thin layer selected from the group consisting of a silicon oxide layer (SiO 2 ), a silicon oxynitride layer, an aluminum oxide layer (Al 2 O 3 ), a tantalum oxide layer (Ta 2 O 5 ), a zirconium oxide layer (ZrO 2 ), a hafnium oxide layer (HfO 2 ) and a radium oxide layer (La2O3).
- the first insulation layer 32 and the second insulation layer 34 are formed of the same material.
- the hard mask layer 35 serves as a thin layer for protecting an upper portion of a side wall of a pillar pattern to be formed later.
- the hard mask layer 35 comprises any one thin layer selected from the group consisting of a nitride layer, an oxide layer and a silicon oxynitride layer.
- FIG. 7B is a cross-sectional view taken long line I-I′ of FIG. 7A .
- the photoresist pattern 39 is formed with a plurality of holes corresponding to opened regions where pillar patterns are to be formed later.
- the holes are shown as circles in FIG. 7A in which the underlying layer 38 is shown as being exposed through the holes. Other, shapes for the holes are not excluded.
- the antireflection layer 38 , the silicon oxynitride layer 37 and the amorphous carbon layer 36 are etched, in, e.g., a first etching process, using the photoresist pattern 39 as an etching barrier or mask.
- an amorphous carbon layer pattern 36 A is formed by etching the amorphous carbon layer 36 .
- the hard mask layer 35 is etched, in, e.g., a second etching process, to form a plurality of hard mask layer patterns 35 A using the amorphous carbon layer pattern 36 A as an etching barrier or mask.
- the second insulation layer 34 , the conductive layer 33 and the first insulation layer 32 are etched subsequently, in, e.g., third and fourth etching processes, using the hard mask layer pattern 35 A as an etching barrier or mask to form a plurality of opened regions 40 .
- the hard mask layer 35 is etched, in the second etching process and using the amorphous carbon layer pattern 36 A as an etching barrier or mask, and, in some embodiments, the etching is stopped on a surface of the second insulation layer 34 .
- the second insulation layer 34 and the conductive layer 33 are etched, in the third etching process and using the hard mask layer pattern 35 A as an etching barrier or mask, and in some embodiments the etching is stopped on a surface of the first insulation layer 32 .
- the first insulation layer 32 is etched in the fourth etching process. In some embodiments, the etching may be stopped on a surface of the substrate 31 . As a result, the opened regions 40 having substantially the same height are obtained.
- the etched second insulation layer 34 , the conductive layer 33 and the first insulation layer 32 are referred to as a second insulation layer pattern 34 A, a conductive layer pattern 33 A and a first insulation layer pattern 32 A, respectively.
- Each opened region 40 is generally at 90° with respect to the substrate 31 , and may have a slope ranging from approximately 70° to approximately 110°.
- the photoresist pattern 39 , the antireflection layer 38 , the silicon oxynitride layer 37 and the amorphous carbon layer pattern 36 A are removed by .
- a gate insulation layer 41 is formed on a side wall of each opened region 40 , i.e., the side walls of the first insulation layer pattern 32 A, the conductive layer pattern 33 A, the second insulation layer pattern 34 A and the hard mask layer pattern 35 A.
- the gate insulation layer 41 is formed by (i) depositing at least one thin film selected from the group consisting of a silicon oxide layer (SiO 2 ), a silicon oxynitride layer, an aluminum oxide layer (Al 2 O 3 ), a tantalum oxide layer (Ta 2 O 5 ), a zirconium oxide layer (ZrO 2 ), a hafnium oxide layer (HfO 2 ) and a radium oxide layer (La 2 O 3 ) along the profile of the substrate 31 where the opened regions 40 are formed, and (ii) performing an overall etching process. Accordingly, the gate insulation layer 41 exists only on the side wall of each opened region 40 while the substrate 31 at the bottom of each opened region 40 remains exposed without being covered by the gate insulation layer 41 .
- deposition thicknesses of the first insulation layer 32 , the second insulation layer 34 and the gate insulation layer 41 are targeted in some embodiments to ensure the same level of final electrical thicknesses thereof.
- the substrate 31 exposed at the bottom of each opened region 40 is doped with impurities to form an impurity region, and the impurity region is then divided by a division process to form a buried bit line.
- the buried bit line defines a data transfer line in the semiconductor device for inputting/outputting data to/from a capacitor (to be described hereinafter).
- FIGS. 7E and 7F a pillar pattern 42 is formed in each opened region 40 by performing an epitaxial growth process.
- FIG. 7E is a top plan view of the multilayer structure obtained after the epitaxial growth process.
- FIG. 7F is a cross-sectional view taken long line II-II′ of FIG. 7E .
- a plurality of pillar patterns 42 are each (i) formed with silicon (Si) crystals grown from the substrate 31 exposed at the bottom of one opened region 40 in the epitaxial growth process until the respective opened region 40 is buried or filled completely, and then (ii) planarized by performing a planarization process such as an etch back process or a chemical mechanical polishing.
- the polishing may be stopped, or over-polishing may be performed, on an upper surface of the hard mask layer pattern 35 A to thereby remove a portion of the hard mask layer pattern 35 A.
- the pillar patterns 42 formed in the epitaxial growth process have substantially the same diameter throughout its axial dimension, and side walls of the pillar patterns 42 have substantially vertical profile.
- a light etch treatment (LET) process is performed before the epitaxial growth process to remove foreign materials or native oxide from the exposed surface of the substrate 31 at the bottom of each opened region 40 .
- the LET process is performed using a mixture gas of, e.g., CF 4 and O 2 , in a downstream-type plasma etcher.
- a source region and a drain region are formed by doping impurities on the upper part of each pillar pattern 42 .
- the source and drain regions define therebetween a vertical channel on each pillar pattern 42 corresponding to the respective buried bit line.
- a pad oxide layer 43 and a gate hard mask layer 44 are formed in sequence on the upper surfaces of the pillar patterns 42 and the hard mask layer pattern 35 A.
- the gate hard mask layer 44 is a thin film for protecting the pillar patterns 42 and for patterning the underlying layers, and it is formed of a nitride layer or an oxide layer, or a stacked structure thereof.
- the pad oxide layer 43 is formed to relieve thin film stresses of the gate hard mask layer 44 and the pillar patterns 42 .
- FIG. 7G is a cross-sectional view taken long line III-III′ of FIG. 7G .
- another hard mask layer (not shown) is further interposed between the gate hard mask layer 44 and the amorphous carbon layer 45 to help patterning the gate hard mask layer 44 .
- the photoresist pattern 48 has multiple photoresist projections denoted at 48 in FIG. 7G , an opened region where the underlying antireflection layer 47 is exposed. The conductive layer 33 under the opened region of the photoresist pattern 48 will be later removed.
- Each photoresist projection of the photoresist pattern 48 is located above and corresponding to one pillar pattern 42 .
- the boundary of the pillar pattern 42 (dot-dot lines) is positioned completely within the boundary of the respective photoresist projection of the photoresist pattern 48 .
- each photoresist projection and the corresponding pillar pattern 42 have the same shape, e.g., circular shapes as shown in FIG. 7G . Other shapes, as discussed above, are not excluded.
- each photoresist projection and the corresponding pillar pattern 42 are coaxially.
- the antireflection layer 47 , the silicon oxynitride layer 46 , and the amorphous carbon layer 45 are etched, in, e.g., a fifth etching process, using the photoresist pattern 48 as an etching barrier or mask.
- the gate hard mask layer 44 and the pad oxide layer 43 are etched, in, e.g., a sixth etching process, using an amorphous carbon layer pattern 45 A formed by etching the amorphous carbon layer 45 as an etching barrier or mask, and then the hard mask layer pattern 35 A, the second insulation layer pattern 34 A, the conductive layer pattern 33 A and the first insulation layer pattern 32 A are etched, in, e.g., seventh and eights etching processes, using the gate hard mask layer pattern 44 A as an etching barrier or mask.
- the etching of the gate hard mask layer 44 and the underlying layers is performed in-situ or ex-situ.
- Reference numeral 43 A represents a pad oxide layer pattern.
- the hard mask layer pattern 35 A is etched in the sixth etching process and using the gate hard mask layer pattern 44 A as an etching barrier or mask and, in some embodiments, the etching stops on a surface of the second insulation layer pattern 34 A.
- the second insulation pattern 34 A and the conductive layer pattern 33 A are etched in sequence, in the seventh etching process, using the same etching barrier, i.e., 44 A.
- the first insulation layer pattern 32 A is etched in the eighth etching process, and, in some embodiments, the etching stops on a surface of the substrate 31 .
- the fifth through eighth etching processes in some embodiments are similar to the first through fourth etching processes, respectively.
- an etched first insulation layer pattern 32 B, an etched second insulation pattern 34 B, a gate electrode 33 B and a side wall protection layer 35 B for protecting the upper portion of each pillar pattern 42 are formed on the side wall of the pillar pattern 42 .
- the gate insulation layer 41 , the gate electrode 33 B and the side wall protection layer 35 B are shaped to surround the pillar pattern 42 .
- the photoresist pattern 48 , the antireflection layer 47 , the silicon oxynitride layer 46 and the amorphous carbon layer pattern 45 A are removed, e.g., by a process similar to the process for removing layers 39 - 36 .
- a capacitor (not shown) is formed adjacent to the source and drain regions formed on each pillar pattern 42 .
- a complete semiconductor device with vertical channels is fabricated.
- the pillar patterns 42 are formed through the growth process rather than by etching the substrate 31 , and since the growth process is performed to fill or bury the already formed opened regions 40 , it is possible to prevent the pillar patterns 42 , which now have sufficient mechanical strength, from leaning over.
- the heights of the opened regions 40 are made evenly, resulting in the heights of the pillar patterns 42 to be even as well. Accordingly, channels of the same length can be obtained.
- the gate electrode 33 B is formed on a flat substrate 31 by depositing the conductive layer 33 , forming the pillar pattern 42 , and patterning the conductive layer 33 in sequence, formations of voids and seams, e.g., by the burial of a conductive layer as in the known device/method, can be avoided. Accordingly, attacks on the gate insulation layer and the substrate can be prevented.
- the side wall protection layer 35 B is covered with the gate hard mask layer pattern 44 A from above, loss of the side wall protection layer 35 B can be avoided during the formation of the gate electrode 33 B.
Abstract
In a method of fabricating a semiconductor device on a substrate having thereon a conductive layer, the conductive layer is patterned to form a plurality of opened regions. A gate insulation layer is formed on a side wall of each of the opened regions. A pillar pattern is formed in each opened region. On each pillar pattern, a gate electrode, which encloses the pillar pattern, is formed by removing the conductive layer between the pillar patterns.
Description
- The present application claims priority of Korean Patent Application No. 10-2008-0031475, filed on Apr. 4, 2008, which is incorporated herein by reference in its entirety.
- The disclosure relates to a method of fabricating a semiconductor device, and more particularly, to a semiconductor device in which channels are formed in a vertical direction and to a method of fabricating such device.
- As semiconductor device integrity increases, a semiconductor device with channels formed in an up and down direction relative to the substrate of the device (referred to herein as vertical channels), and capable of implementing a configuration of 4F2, has been known to the inventors as one method of improving cell efficiency.
-
FIG. 1 is a schematic cross-sectional view of a known conventional semiconductor device with vertical channels. - Referring to
FIG. 1 , the known semiconductor device includes asubstrate 10, a pillar pattern having apillar head 11 and apillar neck 12, a gatehard mask layer 13 for protecting an upper portion of the pillar pattern, a sidewall protection layer 14 for protecting a side wall of thepillar head 11, agate insulation layer 15 surrounding thepillar neck 12 and agate electrode 16. Furthermore, source and drain regions may be formed on thesubstrate 10 and thepillar head 11, and a vertical channel may be formed in thepillar neck 12 to selectively connect the regions. - However, since a diameter of the
pillar neck 12 is smaller than a diameter of thepillar head 11 and a gatehard mask layer 13 is placed over thepillar head 11 in the above configuration of the pillar pattern, it is potential that a pillar pattern may leans over or adheres to another pillar pattern, as shown inFIG. 2 . - Also, since the
pillar head 11 andpillar neck 12 are formed by etching without an etch stop layer, it is potential that the heights of respective pillar patterns are not even such as H1<H2. This results in different channel lengths in different pillar patterns, as shown inFIG. 3 . - In addition, when a conductive layer is filled in the space between adjacent pillar patterns in order to later form the
gate electrode 16,voids 21 and seams are potentially formed inside the conductive layer due to a high aspect ratio between the pillar patterns, as shown inFIG. 4 . When a process of patterning the conductive layer is performed later, thegate insulation layer 15 and the substrate 17 are potentially punched through (see 22 ofFIG. 5 ) due to different etching speeds originating from the presence of theaforementioned voids 21 and seams. Furthermore, the sidewall protection layer 14 is possibly lost excessively due to an inappropriate etching selection ratio during the conductive layer patterning process, which attacks thepillar head 11, as shown inFIG. 6 (see 23 ofFIG. 6 ). - In accordance with one or more embodiments, a method of fabricating a semiconductor device on a substrate having thereon a conductive layer comprises: patterning the conductive layer to form a plurality of opened regions; forming a gate insulation layer on a side wall of each of the opened regions; forming a pillar pattern in each opened region; and forming on each pillar pattern a gate electrode, which encloses said pillar pattern, by removing the conductive layer between the pillar patterns.
- In accordance with one or more embodiments, a method of fabricating a semiconductor device comprises: sequentially forming a first etch stop layer, a conductive layer, a second etch stop layer, and a plurality of hard mask layer patterns on a substrate; forming a plurality of opened regions by etching the second etch stop layer, the conductive layer and the first etch stop layer using the hard mask layer patterns as an etching barrier; forming a gate insulation layer on a side wall of each of the opened regions; forming a pillar pattern inside each opened region; forming a gate hard mask layer pattern covering each pillar pattern and a portion of the conductive layer surrounding said pillar pattern; and forming on each pillar pattern a gate electrode from said portion of the conductive layer by etching portions of the conductive layer between the pillar patterns using the gate hard mask layer pattern as an etching barrier.
- In accordance with one or more embodiments, a semiconductor device comprises: a substrate having at least one pillar pattern grown thereon, a gate insulation layer extending around and covering a side wall of the at least one pillar pattern, a gate electrode extending around and partially covering the gate insulation layer, and a side wall protection layer positioned above the gate electrode, extending around and partially covering the gate insulation layer.
- Various embodiments are illustrated by way of example, and not by limitation, in the figures of the accompanying drawings.
-
FIG. 1 is a schematic cross-sectional view of a known semiconductor device with vertical channels. -
FIGS. 2-6 are electron microscopic pictures showing various defects that can occur in the known semiconductor device. -
FIGS. 7A to 7J are schematic views that illustrate a method of fabricating a semiconductor device with vertical channels in accordance with various embodiments. - In the figures, the dimensions of layers and regions are exaggerated for clarity of illustration. Like reference numerals refer to like elements throughout the drawings. In addition, different English alphabetical characters following a reference numeral of a layer refer to different states of the layer after one or more processing steps, such as partial deformations of the layer by an etch process or a polishing process.
- It will also be understood that when a layer is referred to as being “on/under” another layer or substrate, it can be directly on/under the other layer or substrate, or intervening layers may also be present. In addition, when a layer is referred to as being ‘between’ two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
-
FIGS. 7A to 7J describe a method of fabricating a semiconductor device with vertical channels in accordance with various embodiments. -
- The
conductive layer 33 is a thin layer which will serve as a gate electrode, and comprises at least one thin layer of a material selected from the group consisting of polysilicon, tungsten silicide (WSi2), titanium silicide (TiSi2), tungsten (W), titanium nitride (TiN), tantalum (Ta) and tantalum nitride (TaN). For example, theconductive layer 33 in some embodiments has a stacked configuration of a tungsten layer and a titanium nitride layer, or a tungsten layer, a titanium nitride layer and a polysilicon layer. - The
first insulation layer 32 is a thin layer for insulating between thesubstrate 31 and theconductive layer 33 and defining an etch stop layer in a subsequent etching process. Thesecond insulation layer 34 is a thin layer for insulating between theconductive layer 33 and thehard mask layer 35 and defining another etch stop layer in a subsequent etching process. Thefirst insulation layer 32 and/or thesecond insulation layer 34 comprise(s) any one thin layer selected from the group consisting of a silicon oxide layer (SiO2), a silicon oxynitride layer, an aluminum oxide layer (Al2O3), a tantalum oxide layer (Ta2O5), a zirconium oxide layer (ZrO2), a hafnium oxide layer (HfO2) and a radium oxide layer (La2O3). In some embodiments, thefirst insulation layer 32 and thesecond insulation layer 34 are formed of the same material. - The
hard mask layer 35 serves as a thin layer for protecting an upper portion of a side wall of a pillar pattern to be formed later. For this purpose, thehard mask layer 35 comprises any one thin layer selected from the group consisting of a nitride layer, an oxide layer and a silicon oxynitride layer. - Subsequently, an
amorphous carbon layer 36, a silicon oxynitride layer (SiON) 37, anantireflection layer 38 and aphotoresist pattern 39 are formed on thehard mask layer 35 to obtain a multilayer structure that has a top plan view as shown inFIG. 7A .FIG. 7B is a cross-sectional view taken long line I-I′ ofFIG. 7A . - The
photoresist pattern 39 is formed with a plurality of holes corresponding to opened regions where pillar patterns are to be formed later. The holes are shown as circles inFIG. 7A in which theunderlying layer 38 is shown as being exposed through the holes. Other, shapes for the holes are not excluded. - As shown in
FIG. 7C , theantireflection layer 38, the silicon oxynitride layer 37 and theamorphous carbon layer 36 are etched, in, e.g., a first etching process, using thephotoresist pattern 39 as an etching barrier or mask. As a result, an amorphouscarbon layer pattern 36A is formed by etching theamorphous carbon layer 36. - Subsequently, the
hard mask layer 35 is etched, in, e.g., a second etching process, to form a plurality of hardmask layer patterns 35A using the amorphouscarbon layer pattern 36A as an etching barrier or mask. After that, thesecond insulation layer 34, theconductive layer 33 and thefirst insulation layer 32 are etched subsequently, in, e.g., third and fourth etching processes, using the hardmask layer pattern 35A as an etching barrier or mask to form a plurality of openedregions 40. - To be specific, the
hard mask layer 35 is etched, in the second etching process and using the amorphouscarbon layer pattern 36A as an etching barrier or mask, and, in some embodiments, the etching is stopped on a surface of thesecond insulation layer 34. Subsequently, thesecond insulation layer 34 and theconductive layer 33 are etched, in the third etching process and using the hardmask layer pattern 35A as an etching barrier or mask, and in some embodiments the etching is stopped on a surface of thefirst insulation layer 32. Finally, thefirst insulation layer 32 is etched in the fourth etching process. In some embodiments, the etching may be stopped on a surface of thesubstrate 31. As a result, theopened regions 40 having substantially the same height are obtained. - Hereinafter, the etched
second insulation layer 34, theconductive layer 33 and thefirst insulation layer 32 are referred to as a secondinsulation layer pattern 34A, aconductive layer pattern 33A and a firstinsulation layer pattern 32A, respectively. - Each opened
region 40 is generally at 90° with respect to thesubstrate 31, and may have a slope ranging from approximately 70° to approximately 110°. -
- As shown in
FIG. 7D , agate insulation layer 41 is formed on a side wall of each openedregion 40, i.e., the side walls of the firstinsulation layer pattern 32A, theconductive layer pattern 33A, the secondinsulation layer pattern 34A and the hardmask layer pattern 35A. - The
gate insulation layer 41 is formed by (i) depositing at least one thin film selected from the group consisting of a silicon oxide layer (SiO2), a silicon oxynitride layer, an aluminum oxide layer (Al2O3), a tantalum oxide layer (Ta2O5), a zirconium oxide layer (ZrO2), a hafnium oxide layer (HfO2) and a radium oxide layer (La2O3) along the profile of thesubstrate 31 where the openedregions 40 are formed, and (ii) performing an overall etching process. Accordingly, thegate insulation layer 41 exists only on the side wall of each openedregion 40 while thesubstrate 31 at the bottom of each openedregion 40 remains exposed without being covered by thegate insulation layer 41. - Meanwhile, deposition thicknesses of the
first insulation layer 32, thesecond insulation layer 34 and thegate insulation layer 41 are targeted in some embodiments to ensure the same level of final electrical thicknesses thereof. - Subsequently, the
substrate 31 exposed at the bottom of each openedregion 40 is doped with impurities to form an impurity region, and the impurity region is then divided by a division process to form a buried bit line. The buried bit line defines a data transfer line in the semiconductor device for inputting/outputting data to/from a capacitor (to be described hereinafter). - As shown in
FIGS. 7E and 7F , apillar pattern 42 is formed in each openedregion 40 by performing an epitaxial growth process.FIG. 7E is a top plan view of the multilayer structure obtained after the epitaxial growth process.FIG. 7F is a cross-sectional view taken long line II-II′ ofFIG. 7E . - In particular, a plurality of
pillar patterns 42 are each (i) formed with silicon (Si) crystals grown from thesubstrate 31 exposed at the bottom of one openedregion 40 in the epitaxial growth process until the respective openedregion 40 is buried or filled completely, and then (ii) planarized by performing a planarization process such as an etch back process or a chemical mechanical polishing. In some embodiments, the polishing may be stopped, or over-polishing may be performed, on an upper surface of the hardmask layer pattern 35A to thereby remove a portion of the hardmask layer pattern 35A. - The
pillar patterns 42 formed in the epitaxial growth process have substantially the same diameter throughout its axial dimension, and side walls of thepillar patterns 42 have substantially vertical profile. - Additionally, in some embodiments, before the epitaxial growth process, a light etch treatment (LET) process is performed to remove foreign materials or native oxide from the exposed surface of the
substrate 31 at the bottom of each openedregion 40. The LET process is performed using a mixture gas of, e.g., CF4 and O2, in a downstream-type plasma etcher. - Next, a source region and a drain region are formed by doping impurities on the upper part of each
pillar pattern 42. The source and drain regions define therebetween a vertical channel on eachpillar pattern 42 corresponding to the respective buried bit line. - As shown in
FIGS. 7G and 7H , a pad oxide layer 43 and a gatehard mask layer 44 are formed in sequence on the upper surfaces of thepillar patterns 42 and the hardmask layer pattern 35A. - The gate
hard mask layer 44 is a thin film for protecting thepillar patterns 42 and for patterning the underlying layers, and it is formed of a nitride layer or an oxide layer, or a stacked structure thereof. The pad oxide layer 43 is formed to relieve thin film stresses of the gatehard mask layer 44 and thepillar patterns 42. - Subsequently, an
amorphous carbon layer 45, asilicon oxynitride layer 46, anantireflection layer 47 and aphotoresist pattern 48 are formed on the gatehard mask layer 44 in sequence. The resulting multilayer structure has a top plan view shown inFIG. 7G .FIG. 7H is a cross-sectional view taken long line III-III′ ofFIG. 7G . In some embodiments, another hard mask layer (not shown) is further interposed between the gatehard mask layer 44 and theamorphous carbon layer 45 to help patterning the gatehard mask layer 44. - The
photoresist pattern 48 has multiple photoresist projections denoted at 48 inFIG. 7G , an opened region where theunderlying antireflection layer 47 is exposed. Theconductive layer 33 under the opened region of thephotoresist pattern 48 will be later removed. Each photoresist projection of thephotoresist pattern 48 is located above and corresponding to onepillar pattern 42. In the plan view ofFIG. 7G , the boundary of the pillar pattern 42 (dot-dot lines) is positioned completely within the boundary of the respective photoresist projection of thephotoresist pattern 48. In some embodiments, each photoresist projection and thecorresponding pillar pattern 42 have the same shape, e.g., circular shapes as shown inFIG. 7G . Other shapes, as discussed above, are not excluded. In some embodiments, each photoresist projection and thecorresponding pillar pattern 42 are coaxially. - As shown in
FIGS. 7I and 7J , theantireflection layer 47, thesilicon oxynitride layer 46, and theamorphous carbon layer 45 are etched, in, e.g., a fifth etching process, using thephotoresist pattern 48 as an etching barrier or mask. - After that, the gate
hard mask layer 44 and the pad oxide layer 43 are etched, in, e.g., a sixth etching process, using an amorphouscarbon layer pattern 45A formed by etching theamorphous carbon layer 45 as an etching barrier or mask, and then the hardmask layer pattern 35A, the secondinsulation layer pattern 34A, theconductive layer pattern 33A and the firstinsulation layer pattern 32A are etched, in, e.g., seventh and eights etching processes, using the gate hardmask layer pattern 44A as an etching barrier or mask. In some embodiments, the etching of the gatehard mask layer 44 and the underlying layers is performed in-situ or ex-situ.Reference numeral 43A represents a pad oxide layer pattern. - To be more specific, the hard
mask layer pattern 35A is etched in the sixth etching process and using the gate hardmask layer pattern 44A as an etching barrier or mask and, in some embodiments, the etching stops on a surface of the secondinsulation layer pattern 34A. Subsequently, thesecond insulation pattern 34A and theconductive layer pattern 33A are etched in sequence, in the seventh etching process, using the same etching barrier, i.e., 44A. In some embodiments, the etching stops on a surface of the firstinsulation layer pattern 32A. Finally, the firstinsulation layer pattern 32A is etched in the eighth etching process, and, in some embodiments, the etching stops on a surface of thesubstrate 31. The fifth through eighth etching processes in some embodiments are similar to the first through fourth etching processes, respectively. - As a result of the etching processes discussed above, an etched first
insulation layer pattern 32B, an etchedsecond insulation pattern 34B, agate electrode 33B and a sidewall protection layer 35B for protecting the upper portion of eachpillar pattern 42 are formed on the side wall of thepillar pattern 42. Thegate insulation layer 41, thegate electrode 33B and the sidewall protection layer 35B are shaped to surround thepillar pattern 42. - After that, the
photoresist pattern 48, theantireflection layer 47, thesilicon oxynitride layer 46 and the amorphouscarbon layer pattern 45A are removed, e.g., by a process similar to the process for removing layers 39-36. - Next, a capacitor (not shown) is formed adjacent to the source and drain regions formed on each
pillar pattern 42. As a result, a complete semiconductor device with vertical channels is fabricated. - Since the
pillar patterns 42 are formed through the growth process rather than by etching thesubstrate 31, and since the growth process is performed to fill or bury the already formed openedregions 40, it is possible to prevent thepillar patterns 42, which now have sufficient mechanical strength, from leaning over. - Also, the heights of the opened
regions 40 are made evenly, resulting in the heights of thepillar patterns 42 to be even as well. Accordingly, channels of the same length can be obtained. - In addition, since the
gate electrode 33B is formed on aflat substrate 31 by depositing theconductive layer 33, forming thepillar pattern 42, and patterning theconductive layer 33 in sequence, formations of voids and seams, e.g., by the burial of a conductive layer as in the known device/method, can be avoided. Accordingly, attacks on the gate insulation layer and the substrate can be prevented. - Furthermore, since the side
wall protection layer 35B is covered with the gate hardmask layer pattern 44A from above, loss of the sidewall protection layer 35B can be avoided during the formation of thegate electrode 33B. - Accordingly, reliability and stability of semiconductor devices manufactured in accordance with various embodiments, particularly those of no more than 40 nm, can be enhanced and yield can be improved.
- While specific embodiments have been described, it will be apparent to those skilled in the art that various changes and modifications may be made.
Claims (6)
1-15. (canceled)
16. A semiconductor device, comprising:
a substrate having at least one pillar pattern grown thereon,
a gate insulation layer extending around and covering a side wall of the at least one pillar pattern,
a gate electrode extending around and partially covering the gate insulation layer, and
a side wall protection layer positioned above the gate electrode, extending around and partially covering the gate insulation layer.
17. The device of claim 16 , wherein the side wall of the at least one pillar pattern is substantially normal to a plane of the substrate throughout an entire height of said at least one pillar pattern.
18. The device of claim 16 , further comprising
at least one insulation layer extending around and partially covering the gate insulation layer,
wherein said gate electrode, said side wall protection layer and said at least one insulation layer completely cover said gate insulation layer over an entire height of the at least one pillar pattern.
19. The device of claim 18 , wherein said at least one insulation layer comprises a first insulation layer between the gate electrode and the substrate, and a second insulation layer between the gate electrode and the side wall protection layer.
20. The device of claim 16 , further comprising
a gate hard mask layer formed above and completely covering upper surfaces of the side wall protection layer, the gate insulation layer, and the at least one pillar pattern.
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US12/318,168 US8399324B2 (en) | 2008-04-04 | 2008-12-23 | Semiconductor device and method of fabricating the same |
US13/768,932 US20130181266A1 (en) | 2008-04-04 | 2013-02-15 | Semiconductor device and method of fabricating the same |
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JP2009141073A (en) * | 2007-12-05 | 2009-06-25 | Elpida Memory Inc | Method of manufacturing semiconductor device, and semiconductor device |
KR20130075348A (en) * | 2011-12-27 | 2013-07-05 | 에스케이하이닉스 주식회사 | Semiconductor device having buried bitline and fabricating the same |
JP2016529736A (en) * | 2013-08-27 | 2016-09-23 | 東京エレクトロン株式会社 | How to trim a hard mask horizontally |
JPWO2015060069A1 (en) * | 2013-10-22 | 2017-03-09 | 株式会社日立国際電気 | Fine pattern forming method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6426259B1 (en) * | 2000-11-15 | 2002-07-30 | Advanced Micro Devices, Inc. | Vertical field effect transistor with metal oxide as sidewall gate insulator |
US6882006B2 (en) * | 1993-05-12 | 2005-04-19 | Renesas Technology Corp. | Semiconductor device and method of manufacturing the same |
US20060006444A1 (en) * | 2004-01-27 | 2006-01-12 | Micron Technology, Inc. | Selective epitaxy vertical integrated circuit components and methods |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489565A (en) * | 1987-09-30 | 1989-04-04 | Nec Corp | Field-effect transistor |
US5308782A (en) * | 1992-03-02 | 1994-05-03 | Motorola | Semiconductor memory device and method of formation |
KR100242379B1 (en) | 1992-04-17 | 2000-02-01 | 김영환 | Vertical channel mosfet and manufacturing method thereof |
US7119390B2 (en) * | 2002-08-02 | 2006-10-10 | Promos Technologies Inc. | Dynamic random access memory and fabrication thereof |
US6632712B1 (en) * | 2002-10-03 | 2003-10-14 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating variable length vertical transistors |
US7355230B2 (en) | 2004-11-30 | 2008-04-08 | Infineon Technologies Ag | Transistor array for semiconductor memory devices and method for fabricating a vertical channel transistor array |
KR100607785B1 (en) * | 2004-12-31 | 2006-08-02 | 동부일렉트로닉스 주식회사 | Method for manufacturing split gate flash EEPROM |
KR20070002787A (en) * | 2005-06-30 | 2007-01-05 | 매그나칩 반도체 유한회사 | Method for manufacturing semiconductor device |
US7888721B2 (en) * | 2005-07-06 | 2011-02-15 | Micron Technology, Inc. | Surround gate access transistors with grown ultra-thin bodies |
KR100640653B1 (en) | 2005-07-15 | 2006-11-01 | 삼성전자주식회사 | Method of manufacturing semiconductor device having vertical channel and semiconductor device using the same |
KR100800469B1 (en) * | 2005-10-05 | 2008-02-01 | 삼성전자주식회사 | Circuitry device comprising vertical transistors with buried bit lines and manufacturing method for the same |
US7811935B2 (en) * | 2006-03-07 | 2010-10-12 | Micron Technology, Inc. | Isolation regions and their formation |
JP5016832B2 (en) * | 2006-03-27 | 2012-09-05 | 株式会社東芝 | Nonvolatile semiconductor memory device and manufacturing method thereof |
KR100960928B1 (en) * | 2008-01-02 | 2010-06-07 | 주식회사 하이닉스반도체 | Vertical transistor and method of forming the same |
KR101094377B1 (en) * | 2008-04-04 | 2011-12-15 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6882006B2 (en) * | 1993-05-12 | 2005-04-19 | Renesas Technology Corp. | Semiconductor device and method of manufacturing the same |
US6426259B1 (en) * | 2000-11-15 | 2002-07-30 | Advanced Micro Devices, Inc. | Vertical field effect transistor with metal oxide as sidewall gate insulator |
US20060006444A1 (en) * | 2004-01-27 | 2006-01-12 | Micron Technology, Inc. | Selective epitaxy vertical integrated circuit components and methods |
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CN101552237A (en) | 2009-10-07 |
US20090250732A1 (en) | 2009-10-08 |
CN101552237B (en) | 2011-07-20 |
KR20090106015A (en) | 2009-10-08 |
TWI474396B (en) | 2015-02-21 |
TW200943414A (en) | 2009-10-16 |
KR100958798B1 (en) | 2010-05-24 |
US8399324B2 (en) | 2013-03-19 |
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