US20130264675A1 - Apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography - Google Patents
Apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography Download PDFInfo
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- US20130264675A1 US20130264675A1 US13/911,294 US201313911294A US2013264675A1 US 20130264675 A1 US20130264675 A1 US 20130264675A1 US 201313911294 A US201313911294 A US 201313911294A US 2013264675 A1 US2013264675 A1 US 2013264675A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76817—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics using printing or stamping techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/101—Forming openings in dielectrics
- H01L2221/1015—Forming openings in dielectrics for dual damascene structures
- H01L2221/1021—Pre-forming the dual damascene structure in a resist layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates to semiconductor manufacturing techniques and more particularly to forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography.
- deep vias e.g., vias that span and/or connect multiple levels of memory elements in a monolithic three dimensional memory array, also known as zias as will be explained below
- deep vias conventionally requires the use of relatively expensive leading edge etch tools.
- each of the mask steps involved in forming deep vias conventionally require the use of relatively expensive leading edge immersion lithography tools and techniques.
- formation of deep vias using immersion lithography when feature sizes reach 32 nm to 15 nm will become even more costly and may not even be possible.
- immersion lithography when feature sizes reach 32 nm to 15 nm will become even more costly and may not even be possible.
- a memory layer in a three-dimensional memory array includes a plurality of memory lines and vias formed by a damascene process using an imprint lithography template having a plurality of depths, wherein at least one depth corresponds to the memory lines and wherein at least one depth corresponds to the vias; and a plurality of memory cells operatively coupled to the memory lines.
- an imprint lithography mask for manufacturing a memory layer in a three dimensional memory.
- the mask includes a translucent material formed with features for making an imprint in a transfer material to be used in a damascene process, the mask having a plurality of imprint depths. At least one imprint depth corresponds to trenches for forming memory lines and wherein at least one depth corresponds to holes for forming vias.
- a three dimensional memory array in a third aspect of this invention, includes a plurality of horizontal memory layers formed on top of each other and electrically coupled to each other by vertical zias, the zias formed from aligned vias in each memory layer, and the memory layers including a plurality of memory lines and the vias, both formed concurrently using an imprint lithography mask.
- FIG. 1 is a perspective view of a structural representation of interleaved word lines and bit lines of a simplified example three-dimensional memory array according to embodiments of this invention.
- FIG. 2 is a perspective view of an example imprint lithography mask suitable for forming the memory lines of the three-dimensional memory array of FIG. 1 according to embodiments of this invention.
- FIG. 3 is a perspective view of a second example imprint lithography mask suitable for forming the memory lines of a three-dimensional memory array according to embodiments of this invention.
- FIGS. 4 AX through 4 DX and 4 AY through 4 DY depict a sequence of cross-sectional views (from a front (X) and a side (Y) perspective, respectively) of a substrate with various process layers, the sequence representing a method of forming a layer of memory lines and vias in accordance with embodiments of this invention.
- FIGS. 5A through 5D depict cross-sectional views of different columns of zias connecting adjacent word line layers and, if present, bit lines at different depths in accordance with embodiments of this invention.
- FIG. 6 is a perspective view of a third example imprint lithography mask suitable for forming the memory lines of a three-dimensional memory array according to embodiments of this invention.
- This invention provides methods and apparatus for forming a three-dimensional memory array (e.g., a monolithic three-dimensional memory array with multiple levels on a single substrate and/or stacked levels of two-dimensional arrays formed on different substrates and subsequently bonded together) using a double depth imprint lithography mask (e.g., a 3D template) to concurrently form trenches and holes for memory lines and vias to adjacent memory levels, respectively.
- a three-dimensional memory array e.g., a monolithic three-dimensional memory array with multiple levels on a single substrate and/or stacked levels of two-dimensional arrays formed on different substrates and subsequently bonded together
- a double depth imprint lithography mask e.g., a 3D template
- each line and via are formed using a dual damascene process where the first feature of the dual damascene process may be a word or bit line and the second feature may be a via leading from the word or bit line.
- multiple depth imprint lithography masks may be used to concurrently form trenches and different depth holes for memory lines and vias to different depth features such as other bit and/or word lines as well as to an adjacent memory level.
- memory lines may be interleaved such that enlarged contact pad regions formed as an extension at one end of each line are disposed in an alternating manner on opposite sides of the three-dimensional memory array.
- adjacent lines may have their associated enlarged pad regions at opposite ends relative to each other.
- the interleaving provides additional area for the enlarged pad regions which are provided for contacting vias extending from other memory lines. By enlarging the pad regions, alignment to the vias is less critical.
- word lines and bit lines may both be formed with vias extending from the word lines and bit lines as indicated above. In some embodiments, only the word lines may be formed concurrently with vias.
- the imprint lithography mask used for word lines may have two depths: a first depth for forming the word lines and a second depth used to form holes for both full depth vias that will reach a next word line and relatively short vias that reach a next bit line.
- the via shape may overlap the bit line edge.
- only the bit lines may be formed concurrently with vias.
- the imprint lithography mask used may have three depths: a first depth for forming the word lines, a second depth used to form holes for full depth vias that will reach a next word line, and a third depth used to form holes for relatively short vias that reach a next bit line.
- the imprint lithography mask used may have four depths: a first depth for forming the word lines, a second depth used to form holes for full depth vias that will reach a next word line, a third depth used to form holes for relatively short depth vias that reach an upper bit line layer, and a fourth depth used to form holes for medium depth vias that reach a lower bit line layer.
- Other imprint lithography masks having other numbers of depths may be used.
- a multi-level memory array includes memory cells formed on each of several memory planes or memory levels. Strings of memory cells on more than one layer may be connected to global bit lines on a single layer. Such a global bit line layer may be disposed on a layer of a monolithic integrated circuit below all the memory levels for more convenient connection to support circuitry for the memory array, which may be disposed in the substrate below the array.
- such a global bit line layer may reside in the midst of the memory levels, or above the array, and more than one global bit line layer may be used.
- the strings of memory cells on more than one layer may also be connected to shared bias nodes on a single layer, which may be disposed above all the memory levels.
- the shared bias nodes may reside in the midst of the memory levels, or below the array.
- the shared bias nodes may likewise be disposed on more than one layer.
- global bit lines may be routed on two or more wiring layers.
- even-numbered strings of memory cells may be associated with global bit lines disposed on one global bit line layer, while odd-numbered strings of memory cells may be associated with global bit lines disposed on another global bit line layer.
- vias may be desirable to have vias that reach down to different levels of bit lines between word lines layers. It may also be desirable to stagger vias to help match the pitch of strings of memory cells, and the required global bit line pitch relaxed to twice the pitch of individual strings of memory cells.
- FIG. 1 a perspective view, structural representation 100 of interleaved word lines 102 and bit lines 104 of a simplified example three-dimensional memory array is depicted.
- the depicted interleaved memory lines 102 , 104 illustrate features formed by the methods and apparatus of this invention. Details of the conventional aspects of forming three-dimensional memory arrays may be found in previously incorporated U.S. patent application Ser. No. 11/751,567.
- a multi-level memory array FIG. 1 includes memory cells (not shown) comprising a vertical diode and resistance changing layer in series at the crossing location of the word lines 102 and bit lines 104 .
- memory cells (not shown) comprising a vertical diode and resistance changing layer in series at the crossing location of the word lines 102 and bit lines 104 .
- An example of such a cross point diode memory array is described in more detail in above referenced U.S. Pat. No. 6,951,780.
- each word line 102 (and each bit line 104 ) may include an enlarged contact pad region 106 at one end of the word line 102 (or bit line 104 ).
- Vias 108 extending down from each word line 102 and each bit line 104 are aligned to contact the enlarged contact pad region 106 .
- the alignment of the vias 108 to the lower memory array lines 102 , 104 is relaxed by interleaving. Interleaving enhances the advantage of imprint lithography by allowing use of a minimum pitch while enjoying a larger tolerance for via alignment.
- the line width and pitch may be scaled more than the via alignment variation.
- 22 nm wide word lines 102 may be formed at a pitch of approximately 44 nm, however the effective line pitch at the via location maybe approximately 88 nm.
- alignment variation between layers may be as much as 22 nm.
- the methods of this invention are scalable because the damascene process allows formation of more robust memory lines 102 , 104 at a smaller feature size. Also, with regard to filling holes to form vias, the aspect ratio of the vias is not as challenging as with manufacturing prior art three dimensional memory arrangements because in this invention, each memory line layer is associated with a via 108 . Note that unlike prior art three dimensional memory designs, each word line layer is connected to the next word line layer by an intervening pad 106 shaped on the bit line layers and vias 108 associated with the dual damascene bit line layer.
- FIG. 2 an example of an imprint lithography mask 200 or template suitable for use in forming the memory lines 102 , 104 and vias 108 of the three-dimensional memory array shown in FIG. 1 is depicted.
- the imprint lithography mask 200 or template is formed by etching a desired pattern into a translucent blank made from, for example, quartz or fused silica.
- the imprint mask 200 includes interleaved rails 202 (corresponding to trenches) with wider landings 206 for forming contact pads at alternating ends of the rails 202 . Pillars 208 (corresponding to vias) project upwards from the top surface of each of the landings 206 .
- the imprint lithography mask 200 may be formed at the minimum dimensions (e.g., line width and pitch) achievable by whichever technology (e.g., 32 nm, 16 nm, 9 nm photolithography, immersion lithography, etc.) may be used to pattern the mask 200 . Because a single mask 200 may be used repeatedly to form many layers of interconnect structures, the cost of manufacturing the mask 200 may be spread over each use of the mask 200 . Thus, a net manufacturing cost reduction may be achieved by the methods and apparatus of this invention.
- whichever technology e.g., 32 nm, 16 nm, 9 nm photolithography, immersion lithography, etc.
- the imprint lithography mask 200 is inverted from the orientation shown and used to imprint its complement shape into a liquid transfer layer.
- the liquid transfer layer is then hardened or cured by exposure to light (e.g., ultraviolet) or other radiation transmitted directly through the translucent imprint lithography mask 200 .
- the hardened or cured transfer layer may be used during oxide etch to transfer the features of the imprint lithography mask 200 into a dielectric (e.g., oxide) layer.
- FIG. 3 a second example of an imprint lithography mask 300 or template suitable for forming the memory lines and vias of a three-dimensional memory array is depicted.
- the simplified example mask 300 corresponds to the mask 300 used in the processing sequence described below with respect to FIGS. 4 AX through 4 DX and 4 AY through 4 DY.
- FIGS. 4 AX, 4 BX, 4 CX, and 4 DX are cross-sectional views of a sequence of processing steps illustrating the formation of trenches and holes in a dielectric layer for use in manufacturing a memory array.
- the perspective of the sequence of views is looking down the length of the trenches, away from the pillars of the imprint lithography mask 300 .
- FIGS. 4 AY, 4 BY, 4 CY, and 4 DY are also cross-sectional views of the sequence of processing steps illustrating the formation of trenches and holes in the dielectric layer.
- the perspective of these views is looking across a trench and a via hole with the pillars of the imprint lithography mask 300 disposed on the left hand side of the cross-sectional views.
- the second example of an imprint lithography mask 300 or template may be formed by etching a desired pattern into a translucent blank made from, for example, quartz or fused silica. Further, the imprint lithography mask 300 may also be formed at the minimum dimensions (e.g., line width and pitch) achievable by whichever technology (e.g., 32 nm, 16 nm, 9 nm photolithography, immersion lithography, etc.) may be used to pattern the mask 300 .
- whichever technology e.g., 32 nm, 16 nm, 9 nm photolithography, immersion lithography, etc.
- FIGS. 4 AX through 4 DX and 4 AY through 4 DY a method of forming memory lines and vias for a layer of a three-dimensional memory array is depicted from a front and side plan cross-sectional view, respectively.
- each side by side pair of drawings represents a cross-sectional plan view of the same process step where the drawing numbers ending in X are views at the X-X cross-sectional cut line of FIG. 3 and the drawing numbers ending in Y are views at the Y-Y cross-sectional cut line of FIG. 3 , respectively.
- the inventive process of this invention may begin with an initial arrangement of various material layers 402 - 408 selected to be suitable to form the desired devices in a memory array or other circuit.
- the imprint lithography mask 300 is shown inserted in a transfer layer 402 .
- a hardmask layer 404 has been deposited on a dielectric layer 406 which is on a conductor or wire layer 408 .
- the transfer layer 402 facilitates concurrently transferring both the memory lines pattern and the vias pattern from the imprint lithography mask 300 to the dielectric layer 406 .
- transfer layer 402 may be a photopolymerizable liquid material that is spin coated or otherwise deposited onto hardmask layer 404 .
- the transfer layer 402 once cured, preferably provides high etch rate selectivity when subjected to subsequent etch processes that facilitate transfer of the desired dual damascene pattern.
- the transfer layer, 402 may be resist or a conventional photoresist such as, for example, a spun on polymer PMMA and/or photo-curable materials such as those sold by Molecular Imprints Inc. under the name S-FIL Monomat Ac01, which may be cured by exposure to I-line radiation (e.g., 365 nanometers) utilizing a photo source such as 100 Watt Hg—Se ultraviolet arc lamp.
- a photoresist such as, for example, a spun on polymer PMMA and/or photo-curable materials such as those sold by Molecular Imprints Inc. under the name S-FIL Monomat Ac01, which may be cured by exposure to I-line radiation (e.g., 365 nanometers) utilizing a photo source such as 100 Watt Hg—Se ultraviolet arc lamp.
- a photo-curable material that may be utilized is a material that includes ethylene glycol diacrylate (3-acryloxypropyl)tris(trimethylsiloxy)silane, t-butyl acrylate, and 2-hydroxy-2-methyl-1-phenyl-propan-1-one. Other practicable materials may be used.
- the transfer layer 402 may have an initial thickness in the range of approximately 500 angstroms to approximately 5,000 angstroms.
- a layer of hardmask material 404 may be deposited.
- a polycrystalline semiconductor material may be used as a hardmask 404 such as polysilicon, a polycrystalline silicon-germanium alloy, polygermanium or any other suitable material.
- a material such as tungsten (W) may be used.
- the hardmask material layer 404 thickness may be of varying thickness, depending on the etch process parameters used. In some embodiments, the hardmask material layer 404 may have an initial thickness in the range of approximately 500 angstroms to approximately 3000 angstroms.
- the dielectric layer 406 is the layer into which the dual damascene interconnect structure is to ultimately be formed.
- Dielectric layer 406 may include dielectric material or insulating material including silicon based dielectric materials, silicates, low k material, and the like.
- Silicon based dielectric materials include silicon dioxide (SiO2), silicon nitride, silicon oxynitride, and the like.
- Silicates include fluorine doped silicon glass (FSG), tetraethylorthosilicate (TEOS), borophosphotetraethylorthosilicate (BPTEOS), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), and other suitable materials and spin-on glass (SOG).
- Low k polymer materials include one or more of polyimides, fluorinated polyimides, polysilsequioxane, benzocyclobutene (BCB), poly(arylene ester), parylene F, parylene N, amorphous polytetrafluoroethylene, and the like.
- the dielectric layer 406 may have an initial thickness in the range of approximately 1500 angstroms to approximately 10,000 angstroms.
- the conductive metal or wire layer 408 may include tungsten (W) or any practicable conductor.
- the wire layer 408 may have a thickness in the range of approximately 1000 angstroms to approximately 2000 angstroms.
- the wire layer 408 may be formed on a substrate (not shown) and/or may be part of another memory level.
- the imprint lithography mask 300 is depressed into transfer layer 402 . Once the mask 300 is in position, the transfer layer 402 is then hardened by exposure to light (e.g., ultraviolet) or other radiation (e.g., an electron beam) transmitted directly through the translucent imprint lithography mask 300 . As shown in FIGS. 4 BX and 4 BY, the mask 300 is removed after the transfer layer 402 has been cured and a complementary version of the dual damascene features of the mask 300 remains.
- light e.g., ultraviolet
- other radiation e.g., an electron beam
- an etch process is applied to form the structure depicted in FIGS. 4 CX and 4 CY.
- the hardmask layer 404 that is exposed in the via holes is initially etched away. Then, during a partial etch of the dielectric layer 406 that was exposed in the via holes, the transfer layer 402 is eroded through to the hardmask layer 404 in the trench regions.
- the exposed area of hardmask layer 404 in the trenches is etched away and the consequently exposed dielectric layer 406 is etched to form the final trenches.
- the area of the dielectric layer 406 in the via holes previously exposed, is etched away down to the wire layer 408 to form the final via holes.
- the remaining dielectric layer 406 is then ready to receive a conductor material in the trenches and via holes.
- FIGS. 5A through 5D cross-sectional views of various different embodiments of columns of vias (referred to herein as zias) connecting adjacent word line layers and, if present, bit lines at different depths, are depicted.
- FIG. 5A depicts horizontal word lines 502 connected by three stacked vias 508 forming a zia.
- the two depths labeled “a” and “b” correspond to the depths of the trenches and holes, respectively, formed by the rails and pillars, respectively, of an imprint lithography mask 300 .
- FIG. 5B also depicts horizontal word lines 502 connected by stacked vias 508 forming a zia.
- a third damascene feature at a third depth “c” is included in the structure of FIG. 5B .
- This shoulder at a third depth allows connection to a bit line 504 running perpendicular (i.e., into and out of the page) to the word lines 502 as shown.
- FIG. 5C also depicts horizontal word lines 502 connected by stacked vias 508 forming a zia and connections to bit lines 504 using a shoulder at an additional depth labeled “d.”
- depth d is deeper than depth c. This difference in the relative depths of the shoulders facilitates connection to features (e.g., bit lines) at different depths.
- FIG. 5D includes four depths of imprint a, b, c, d and connection to bit lines at two different depths are thus facilitated.
- FIG. 6 depicts an example of an imprint lithography mask 600 that includes interleaved damascene features at four different depths a, b, c, d that could be used to facilitate making interconnections to bit lines 504 at two different depths c, d.
Abstract
Description
- This application is a division of U.S. patent application Ser. No. 11/967,638, filed Dec. 31, 2007, now U.S. Pat. No. 8,466,068, which is incorporated by reference herein in its entirety for all purposes.
- This application is related to the following patent applications, each of which is hereby incorporated by reference herein in its entirety for all purposes:
- U.S. patent application Ser. No. 10/728,451, filed Dec. 5, 2003, and entitled “High Density Contact to Relaxed Geometry Layers;”
- U.S. patent application Ser. No. 11/751,567, filed May 21, 2007, and entitled “Memory Array Incorporating Memory Cells Arranged in NAND Strings;”
- U.S. patent application Ser. No. 10/335,078, filed Dec. 31, 2002, and entitled “Programmable Memory Array Structure Incorporating Series-Connected Transistor Strings and Methods for Fabrication and Operation of Same;” and
- U.S. Pat. No. 6,951,780, issued Oct. 4, 2005, and entitled “Selective Oxidation of Silicon in Diode, TFT, and Monolithic Three Dimensional Memory Arrays.”
- This invention relates to semiconductor manufacturing techniques and more particularly to forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography.
- The formation of deep vias (e.g., vias that span and/or connect multiple levels of memory elements in a monolithic three dimensional memory array, also known as zias as will be explained below) conventionally requires the use of relatively expensive leading edge etch tools. Further, each of the mask steps involved in forming deep vias conventionally require the use of relatively expensive leading edge immersion lithography tools and techniques. Further, formation of deep vias using immersion lithography when feature sizes reach 32 nm to 15 nm will become even more costly and may not even be possible. Thus, what is needed are methods and apparatus that do not require the use of immersion lithography and that reduce the cost of manufacturing deep, submicron three-dimensional memory arrays that use deep vias.
- In a first aspect of this invention, a memory layer in a three-dimensional memory array is provided. The memory layer includes a plurality of memory lines and vias formed by a damascene process using an imprint lithography template having a plurality of depths, wherein at least one depth corresponds to the memory lines and wherein at least one depth corresponds to the vias; and a plurality of memory cells operatively coupled to the memory lines.
- In a second aspect of this invention, an imprint lithography mask is provided for manufacturing a memory layer in a three dimensional memory. The mask includes a translucent material formed with features for making an imprint in a transfer material to be used in a damascene process, the mask having a plurality of imprint depths. At least one imprint depth corresponds to trenches for forming memory lines and wherein at least one depth corresponds to holes for forming vias.
- In a third aspect of this invention, a three dimensional memory array is provided that includes a plurality of horizontal memory layers formed on top of each other and electrically coupled to each other by vertical zias, the zias formed from aligned vias in each memory layer, and the memory layers including a plurality of memory lines and the vias, both formed concurrently using an imprint lithography mask.
- Other features and aspects of this invention will become more fully apparent from the following detailed description, the appended claims and the accompanying drawings.
-
FIG. 1 is a perspective view of a structural representation of interleaved word lines and bit lines of a simplified example three-dimensional memory array according to embodiments of this invention. -
FIG. 2 is a perspective view of an example imprint lithography mask suitable for forming the memory lines of the three-dimensional memory array ofFIG. 1 according to embodiments of this invention. -
FIG. 3 is a perspective view of a second example imprint lithography mask suitable for forming the memory lines of a three-dimensional memory array according to embodiments of this invention. - FIGS. 4AX through 4DX and 4AY through 4DY depict a sequence of cross-sectional views (from a front (X) and a side (Y) perspective, respectively) of a substrate with various process layers, the sequence representing a method of forming a layer of memory lines and vias in accordance with embodiments of this invention.
-
FIGS. 5A through 5D depict cross-sectional views of different columns of zias connecting adjacent word line layers and, if present, bit lines at different depths in accordance with embodiments of this invention. -
FIG. 6 is a perspective view of a third example imprint lithography mask suitable for forming the memory lines of a three-dimensional memory array according to embodiments of this invention. - This invention provides methods and apparatus for forming a three-dimensional memory array (e.g., a monolithic three-dimensional memory array with multiple levels on a single substrate and/or stacked levels of two-dimensional arrays formed on different substrates and subsequently bonded together) using a double depth imprint lithography mask (e.g., a 3D template) to concurrently form trenches and holes for memory lines and vias to adjacent memory levels, respectively.
- More specifically, each line and via are formed using a dual damascene process where the first feature of the dual damascene process may be a word or bit line and the second feature may be a via leading from the word or bit line. In some embodiments, multiple depth imprint lithography masks may be used to concurrently form trenches and different depth holes for memory lines and vias to different depth features such as other bit and/or word lines as well as to an adjacent memory level.
- In another aspect of the invention and in some embodiments, memory lines may be interleaved such that enlarged contact pad regions formed as an extension at one end of each line are disposed in an alternating manner on opposite sides of the three-dimensional memory array. In other words, adjacent lines may have their associated enlarged pad regions at opposite ends relative to each other. Thus, the interleaving provides additional area for the enlarged pad regions which are provided for contacting vias extending from other memory lines. By enlarging the pad regions, alignment to the vias is less critical.
- In some embodiments, word lines and bit lines may both be formed with vias extending from the word lines and bit lines as indicated above. In some embodiments, only the word lines may be formed concurrently with vias.
- In such embodiments, the imprint lithography mask used for word lines may have two depths: a first depth for forming the word lines and a second depth used to form holes for both full depth vias that will reach a next word line and relatively short vias that reach a next bit line. In such embodiments, the via shape may overlap the bit line edge. Likewise, in some embodiments, only the bit lines may be formed concurrently with vias.
- In some embodiments, the imprint lithography mask used may have three depths: a first depth for forming the word lines, a second depth used to form holes for full depth vias that will reach a next word line, and a third depth used to form holes for relatively short vias that reach a next bit line.
- In some embodiments, the imprint lithography mask used may have four depths: a first depth for forming the word lines, a second depth used to form holes for full depth vias that will reach a next word line, a third depth used to form holes for relatively short depth vias that reach an upper bit line layer, and a fourth depth used to form holes for medium depth vias that reach a lower bit line layer. Other imprint lithography masks having other numbers of depths may be used.
- In some embodiments, a multi-level memory array according to this invention includes memory cells formed on each of several memory planes or memory levels. Strings of memory cells on more than one layer may be connected to global bit lines on a single layer. Such a global bit line layer may be disposed on a layer of a monolithic integrated circuit below all the memory levels for more convenient connection to support circuitry for the memory array, which may be disposed in the substrate below the array.
- In some embodiments such a global bit line layer may reside in the midst of the memory levels, or above the array, and more than one global bit line layer may be used. Moreover, the strings of memory cells on more than one layer may also be connected to shared bias nodes on a single layer, which may be disposed above all the memory levels.
- In some embodiments, the shared bias nodes may reside in the midst of the memory levels, or below the array. The shared bias nodes may likewise be disposed on more than one layer.
- Because some memory arrangements (e.g., a non-mirrored arrangement) may use a global bit line for each adjacent string of memory cells, the pitch of global bit lines may be tighter than for other arrangements in which adjacent strings of memory cells share the same global bit line. To alleviate global bit line pitch problems, in certain embodiments global bit lines may be routed on two or more wiring layers.
- For example, even-numbered strings of memory cells may be associated with global bit lines disposed on one global bit line layer, while odd-numbered strings of memory cells may be associated with global bit lines disposed on another global bit line layer. Thus, it may be desirable to have vias that reach down to different levels of bit lines between word lines layers. It may also be desirable to stagger vias to help match the pitch of strings of memory cells, and the required global bit line pitch relaxed to twice the pitch of individual strings of memory cells.
- Vertical vias that contact more than two vertically adjacent layers may also be used, particularly for three-dimensional arrays having more than one plane of memory cells. Such a vertical connection may be conveniently termed a “zia” to imply a via-type structure connecting more than one layer in the z-direction. Preferred zia structures and related methods for their formation are described in Cleeves U.S. Pat. No. 6,534,403, issued Mar. 18, 2003, the disclosure of which is hereby incorporated by reference in its entirety. Additional details of exemplary zias are described in previously incorporated U.S. patent application Ser. No. 10/335,078.
- Turning to
FIG. 1 , a perspective view,structural representation 100 of interleavedword lines 102 andbit lines 104 of a simplified example three-dimensional memory array is depicted. The depicted interleavedmemory lines - In other embodiments a multi-level memory array
FIG. 1 according to this invention includes memory cells (not shown) comprising a vertical diode and resistance changing layer in series at the crossing location of the word lines 102 and bit lines 104. An example of such a cross point diode memory array is described in more detail in above referenced U.S. Pat. No. 6,951,780. - In this invention, each word line 102 (and each bit line 104) may include an enlarged
contact pad region 106 at one end of the word line 102 (or bit line 104).Vias 108, extending down from eachword line 102 and eachbit line 104 are aligned to contact the enlargedcontact pad region 106. Thus, the alignment of thevias 108 to the lowermemory array lines - In such an embodiment, the line width and pitch may be scaled more than the via alignment variation. For example, 22 nm
wide word lines 102 may be formed at a pitch of approximately 44 nm, however the effective line pitch at the via location maybe approximately 88 nm. In certain arrangements, alignment variation between layers may be as much as 22 nm. - The methods of this invention are scalable because the damascene process allows formation of more
robust memory lines intervening pad 106 shaped on the bit line layers and vias 108 associated with the dual damascene bit line layer. - Turning to
FIG. 2 , an example of animprint lithography mask 200 or template suitable for use in forming thememory lines FIG. 1 is depicted. Theimprint lithography mask 200 or template is formed by etching a desired pattern into a translucent blank made from, for example, quartz or fused silica. - As shown, the
imprint mask 200 includes interleaved rails 202 (corresponding to trenches) withwider landings 206 for forming contact pads at alternating ends of therails 202. Pillars 208 (corresponding to vias) project upwards from the top surface of each of thelandings 206. - The
imprint lithography mask 200 may be formed at the minimum dimensions (e.g., line width and pitch) achievable by whichever technology (e.g., 32 nm, 16 nm, 9 nm photolithography, immersion lithography, etc.) may be used to pattern themask 200. Because asingle mask 200 may be used repeatedly to form many layers of interconnect structures, the cost of manufacturing themask 200 may be spread over each use of themask 200. Thus, a net manufacturing cost reduction may be achieved by the methods and apparatus of this invention. - In operation, the
imprint lithography mask 200 is inverted from the orientation shown and used to imprint its complement shape into a liquid transfer layer. The liquid transfer layer is then hardened or cured by exposure to light (e.g., ultraviolet) or other radiation transmitted directly through the translucentimprint lithography mask 200. As will be described in more detail below, the hardened or cured transfer layer may be used during oxide etch to transfer the features of theimprint lithography mask 200 into a dielectric (e.g., oxide) layer. - Turning to
FIG. 3 , a second example of animprint lithography mask 300 or template suitable for forming the memory lines and vias of a three-dimensional memory array is depicted. Thesimplified example mask 300 corresponds to themask 300 used in the processing sequence described below with respect to FIGS. 4AX through 4DX and 4AY through 4DY. - As indicated by the X-X cross-sectional cut line and view arrows in
FIG. 3 , FIGS. 4AX, 4BX, 4CX, and 4DX are cross-sectional views of a sequence of processing steps illustrating the formation of trenches and holes in a dielectric layer for use in manufacturing a memory array. - As indicated in
FIG. 3 , the perspective of the sequence of views is looking down the length of the trenches, away from the pillars of theimprint lithography mask 300. - Further, as indicated by the Y-Y cross-sectional cut line and view arrows in
FIG. 3 , FIGS. 4AY, 4BY, 4CY, and 4DY are also cross-sectional views of the sequence of processing steps illustrating the formation of trenches and holes in the dielectric layer. However, as also indicated inFIG. 3 , the perspective of these views is looking across a trench and a via hole with the pillars of theimprint lithography mask 300 disposed on the left hand side of the cross-sectional views. - As with the
imprint lithography mask 200 described above, the second example of animprint lithography mask 300 or template may be formed by etching a desired pattern into a translucent blank made from, for example, quartz or fused silica. Further, theimprint lithography mask 300 may also be formed at the minimum dimensions (e.g., line width and pitch) achievable by whichever technology (e.g., 32 nm, 16 nm, 9 nm photolithography, immersion lithography, etc.) may be used to pattern themask 300. - As stated above, because a
single mask 300 may be used repeatedly to form many layers of interconnect structures, the cost of manufacturing themask 300 may be spread over each use of themask 300. Thus, a net manufacturing cost reduction may be achieved by the methods and apparatus of this invention. - Turning to FIGS. 4AX through 4DX and 4AY through 4DY, a method of forming memory lines and vias for a layer of a three-dimensional memory array is depicted from a front and side plan cross-sectional view, respectively. Note that as indicated above, each side by side pair of drawings represents a cross-sectional plan view of the same process step where the drawing numbers ending in X are views at the X-X cross-sectional cut line of
FIG. 3 and the drawing numbers ending in Y are views at the Y-Y cross-sectional cut line ofFIG. 3 , respectively. In the step depicted in FIGS. 4AX and 4AY, the inventive process of this invention may begin with an initial arrangement of various material layers 402-408 selected to be suitable to form the desired devices in a memory array or other circuit. - The
imprint lithography mask 300 is shown inserted in atransfer layer 402. Under thetransfer layer 402, ahardmask layer 404 has been deposited on adielectric layer 406 which is on a conductor orwire layer 408. Thetransfer layer 402 facilitates concurrently transferring both the memory lines pattern and the vias pattern from theimprint lithography mask 300 to thedielectric layer 406. - In some embodiments,
transfer layer 402 may be a photopolymerizable liquid material that is spin coated or otherwise deposited ontohardmask layer 404. Thetransfer layer 402, once cured, preferably provides high etch rate selectivity when subjected to subsequent etch processes that facilitate transfer of the desired dual damascene pattern. - In some embodiments the transfer layer, 402, may be resist or a conventional photoresist such as, for example, a spun on polymer PMMA and/or photo-curable materials such as those sold by Molecular Imprints Inc. under the name S-FIL Monomat Ac01, which may be cured by exposure to I-line radiation (e.g., 365 nanometers) utilizing a photo source such as 100 Watt Hg—Se ultraviolet arc lamp.
- Another example of a photo-curable material that may be utilized is a material that includes ethylene glycol diacrylate (3-acryloxypropyl)tris(trimethylsiloxy)silane, t-butyl acrylate, and 2-hydroxy-2-methyl-1-phenyl-propan-1-one. Other practicable materials may be used. In some embodiments, the
transfer layer 402 may have an initial thickness in the range of approximately 500 angstroms to approximately 5,000 angstroms. - Between the
transfer layer 402 and thedielectric layer 406, a layer ofhardmask material 404 may be deposited. In some embodiments, a polycrystalline semiconductor material may be used as ahardmask 404 such as polysilicon, a polycrystalline silicon-germanium alloy, polygermanium or any other suitable material. - In other embodiments, a material such as tungsten (W) may be used. The
hardmask material layer 404 thickness may be of varying thickness, depending on the etch process parameters used. In some embodiments, thehardmask material layer 404 may have an initial thickness in the range of approximately 500 angstroms to approximately 3000 angstroms. - The
dielectric layer 406 is the layer into which the dual damascene interconnect structure is to ultimately be formed.Dielectric layer 406 may include dielectric material or insulating material including silicon based dielectric materials, silicates, low k material, and the like. Silicon based dielectric materials include silicon dioxide (SiO2), silicon nitride, silicon oxynitride, and the like. Silicates include fluorine doped silicon glass (FSG), tetraethylorthosilicate (TEOS), borophosphotetraethylorthosilicate (BPTEOS), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), and other suitable materials and spin-on glass (SOG). - Low k polymer materials include one or more of polyimides, fluorinated polyimides, polysilsequioxane, benzocyclobutene (BCB), poly(arylene ester), parylene F, parylene N, amorphous polytetrafluoroethylene, and the like. Specific examples of a commercially available low k materials include those under the trade designations Flare™ from AlliedSignal, believed to be derived from perfluorobiphenyl and aromatic bisphenols; Black Diamond™ from Applied Materials; ALCAP-S from Asahi Chemical; SiLK™ and Cyclotene™, BCB from Dow Chemical; Teflon™, polytetrafluoroethylene from DuPont; XLK and 3MS from Dow Corning; HSG RZ25 from Hitachi Chemical; HOSP™ and Nanoglass™ from Honeywell Electronic Materials; LKD from JSR Microelectronics; CORAL™ and AF4 from Novellus; mesoporous silica from Battelle PNNL; and Velox™ PAE-2 from Schumacher. In some embodiments, the
dielectric layer 406 may have an initial thickness in the range of approximately 1500 angstroms to approximately 10,000 angstroms. - Below the
dielectric layer 406, the conductive metal orwire layer 408 may include tungsten (W) or any practicable conductor. In some embodiments, thewire layer 408 may have a thickness in the range of approximately 1000 angstroms to approximately 2000 angstroms. Thewire layer 408 may be formed on a substrate (not shown) and/or may be part of another memory level. - The
imprint lithography mask 300 is depressed intotransfer layer 402. Once themask 300 is in position, thetransfer layer 402 is then hardened by exposure to light (e.g., ultraviolet) or other radiation (e.g., an electron beam) transmitted directly through the translucentimprint lithography mask 300. As shown in FIGS. 4BX and 4BY, themask 300 is removed after thetransfer layer 402 has been cured and a complementary version of the dual damascene features of themask 300 remains. - Next, an etch process is applied to form the structure depicted in FIGS. 4CX and 4CY. In some embodiments, the
hardmask layer 404 that is exposed in the via holes is initially etched away. Then, during a partial etch of thedielectric layer 406 that was exposed in the via holes, thetransfer layer 402 is eroded through to thehardmask layer 404 in the trench regions. - To form the final structure depicted in FIGS. 4DX and 4DY, the exposed area of
hardmask layer 404 in the trenches is etched away and the consequently exposeddielectric layer 406 is etched to form the final trenches. The area of thedielectric layer 406 in the via holes previously exposed, is etched away down to thewire layer 408 to form the final via holes. The remainingdielectric layer 406 is then ready to receive a conductor material in the trenches and via holes. - Turning to
FIGS. 5A through 5D , cross-sectional views of various different embodiments of columns of vias (referred to herein as zias) connecting adjacent word line layers and, if present, bit lines at different depths, are depicted.FIG. 5A depictshorizontal word lines 502 connected by three stackedvias 508 forming a zia. The two depths labeled “a” and “b” correspond to the depths of the trenches and holes, respectively, formed by the rails and pillars, respectively, of animprint lithography mask 300. -
FIG. 5B also depictshorizontal word lines 502 connected bystacked vias 508 forming a zia. However, a third damascene feature at a third depth “c” is included in the structure ofFIG. 5B . This shoulder at a third depth allows connection to abit line 504 running perpendicular (i.e., into and out of the page) to the word lines 502 as shown. - Likewise,
FIG. 5C also depictshorizontal word lines 502 connected bystacked vias 508 forming a zia and connections to bitlines 504 using a shoulder at an additional depth labeled “d.” However, note that depth d is deeper than depth c. This difference in the relative depths of the shoulders facilitates connection to features (e.g., bit lines) at different depths.FIG. 5D includes four depths of imprint a, b, c, d and connection to bit lines at two different depths are thus facilitated. - In various embodiments of a three dimensional memory array, different combinations of the depicted zias may be employed together. For example, in a structure where bit lines are run at two different depths, the zias of
FIGS. 5B and 5C may be used in an alternating interleaved manner.FIG. 6 depicts an example of animprint lithography mask 600 that includes interleaved damascene features at four different depths a, b, c, d that could be used to facilitate making interconnections to bitlines 504 at two different depths c, d. - The foregoing description discloses only exemplary embodiments of the invention. Modifications of the above-disclosed embodiments of this invention which fall within the scope of the invention will be readily apparent to those of ordinary skill in the art. For instance, although only imprint lithography masks having up to four imprint depths where depicted, in some embodiments, any practicable number of imprint depths may be employed.
- Accordingly, while this invention has been disclosed in connection with exemplary embodiments thereof, it should be understood that other embodiments may fall within the spirit and scope of the invention as defined by the following claims.
Claims (49)
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812502B2 (en) | 2015-08-31 | 2017-11-07 | Toshiba Memory Corporation | Semiconductor memory device having variable resistance elements provided at intersections of wiring lines |
US10535669B2 (en) * | 2017-11-23 | 2020-01-14 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices and fabricating methods thereof |
US20220080627A1 (en) * | 2020-09-17 | 2022-03-17 | Kioxia Corporation | Template, template manufacturing method, and semiconductor device manufacturing method |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100944605B1 (en) * | 2007-12-24 | 2010-02-25 | 주식회사 동부하이텍 | Semiconductor device |
US20100301449A1 (en) * | 2007-12-31 | 2010-12-02 | Sandisk 3D Llc | Methods and apparatus for forming line and pillar structures for three dimensional memory arrays using a double subtractive process and imprint lithography |
US8466068B2 (en) | 2007-12-31 | 2013-06-18 | Sandisk 3D Llc | Methods and apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography |
JP4945609B2 (en) * | 2009-09-02 | 2012-06-06 | 株式会社東芝 | Semiconductor integrated circuit device |
US8809128B2 (en) * | 2009-10-26 | 2014-08-19 | Sandisk 3D Llc | Methods and apparatus for layout of three dimensional matrix array memory for reduced cost patterning |
CN103493201B (en) * | 2011-03-29 | 2016-04-13 | 惠普发展公司,有限责任合伙企业 | Dual-plane memory array |
WO2013066342A1 (en) | 2011-11-04 | 2013-05-10 | Hewlett-Packard Development Company, L.P. | Structure of a switching device in an array |
US20140353019A1 (en) * | 2013-05-30 | 2014-12-04 | Deepak ARORA | Formation of dielectric with smooth surface |
US9728584B2 (en) * | 2013-06-11 | 2017-08-08 | Micron Technology, Inc. | Three dimensional memory array with select device |
KR102449571B1 (en) * | 2015-08-07 | 2022-10-04 | 삼성전자주식회사 | Semiconductor Device |
TWI562281B (en) * | 2015-08-07 | 2016-12-11 | Macronix Int Co Ltd | Memory device and method of manufacturing the same |
KR102475454B1 (en) * | 2016-01-08 | 2022-12-08 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method of the same |
US10354912B2 (en) * | 2016-03-21 | 2019-07-16 | Qualcomm Incorporated | Forming self-aligned vertical interconnect accesses (VIAs) in interconnect structures for integrated circuits (ICs) |
KR20180064084A (en) * | 2016-12-05 | 2018-06-14 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
JP7026120B2 (en) * | 2017-02-10 | 2022-02-25 | ノースイースタン ユニバーシティ | Damaching template for nanoelement printing made without chemical mechanical flattening |
CN107946237A (en) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | Three-dimensional storage organization bus connection method, storage organization, memory and electronic equipment |
US11121143B2 (en) | 2019-05-24 | 2021-09-14 | Micron Technology, Inc. | Integrated assemblies having conductive posts extending through stacks of alternating materials |
CN110391242B (en) * | 2019-07-31 | 2021-08-20 | 中国科学院微电子研究所 | L-shaped step-shaped word line structure, manufacturing method thereof and three-dimensional memory |
JP2021141252A (en) * | 2020-03-06 | 2021-09-16 | キオクシア株式会社 | Semiconductor device and method for manufacturing the same |
JP7414597B2 (en) | 2020-03-12 | 2024-01-16 | キオクシア株式会社 | Wiring formation method |
JP7458948B2 (en) | 2020-09-17 | 2024-04-01 | キオクシア株式会社 | Template, template manufacturing method, and semiconductor device manufacturing method |
JP2022076684A (en) * | 2020-11-10 | 2022-05-20 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010050385A1 (en) * | 1999-04-28 | 2001-12-13 | Kotecki David E. | Method for simultaneously forming a storage-capacitor electrode and interconnect |
US20040125629A1 (en) * | 2002-12-31 | 2004-07-01 | Scheuerlein Roy E. | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
US20080023885A1 (en) * | 2006-06-15 | 2008-01-31 | Nanochip, Inc. | Method for forming a nano-imprint lithography template having very high feature counts |
US7462292B2 (en) * | 2004-01-27 | 2008-12-09 | Hewlett-Packard Development Company, L.P. | Silicon carbide imprint stamp |
US7795149B2 (en) * | 2006-06-01 | 2010-09-14 | Micron Technology, Inc. | Masking techniques and contact imprint reticles for dense semiconductor fabrication |
US7928004B2 (en) * | 2006-06-30 | 2011-04-19 | Advanced Micro Devices, Inc. | Nano imprint technique with increased flexibility with respect to alignment and feature shaping |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723790A (en) * | 1971-02-01 | 1973-03-27 | Corning Glass Works | Electrical lamp or tube comprising copper coated nickel-iron alloy electrical current conductors and a glass enclosure |
US6124224A (en) * | 1998-09-02 | 2000-09-26 | Ferro Corporation | High temperature sealing glass |
US6780327B1 (en) * | 1999-02-25 | 2004-08-24 | Pall Corporation | Positively charged membrane |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6420215B1 (en) | 2000-04-28 | 2002-07-16 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method of fabrication |
US6515888B2 (en) | 2000-08-14 | 2003-02-04 | Matrix Semiconductor, Inc. | Low cost three-dimensional memory array |
US6664639B2 (en) | 2000-12-22 | 2003-12-16 | Matrix Semiconductor, Inc. | Contact and via structure and method of fabrication |
WO2003030252A2 (en) | 2001-09-28 | 2003-04-10 | Hrl Laboratories, Llc | Process for producing interconnects |
JP3821069B2 (en) | 2002-08-01 | 2006-09-13 | 株式会社日立製作所 | Method for forming structure by transfer pattern |
US6887792B2 (en) | 2002-09-17 | 2005-05-03 | Hewlett-Packard Development Company, L.P. | Embossed mask lithography |
US6911373B2 (en) | 2002-09-20 | 2005-06-28 | Intel Corporation | Ultra-high capacitance device based on nanostructures |
US6822903B2 (en) | 2003-03-31 | 2004-11-23 | Matrix Semiconductor, Inc. | Apparatus and method for disturb-free programming of passive element memory cells |
US7410904B2 (en) * | 2003-04-24 | 2008-08-12 | Hewlett-Packard Development Company, L.P. | Sensor produced using imprint lithography |
US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US7256435B1 (en) * | 2003-06-02 | 2007-08-14 | Hewlett-Packard Development Company, L.P. | Multilevel imprint lithography |
US7291878B2 (en) | 2003-06-03 | 2007-11-06 | Hitachi Global Storage Technologies Netherlands B.V. | Ultra low-cost solid-state memory |
TW200507175A (en) | 2003-06-20 | 2005-02-16 | Matsushita Electric Ind Co Ltd | Pattern forming method, and manufacturing method for semiconductor device |
US7361991B2 (en) | 2003-09-19 | 2008-04-22 | International Business Machines Corporation | Closed air gap interconnect structure |
US7221588B2 (en) | 2003-12-05 | 2007-05-22 | Sandisk 3D Llc | Memory array incorporating memory cells arranged in NAND strings |
US7474000B2 (en) | 2003-12-05 | 2009-01-06 | Sandisk 3D Llc | High density contact to relaxed geometry layers |
US6951780B1 (en) | 2003-12-18 | 2005-10-04 | Matrix Semiconductor, Inc. | Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays |
US7148142B1 (en) * | 2004-06-23 | 2006-12-12 | Advanced Micro Devices, Inc. | System and method for imprint lithography to facilitate dual damascene integration in a single imprint act |
US7195950B2 (en) | 2004-07-21 | 2007-03-27 | Hewlett-Packard Development Company, L.P. | Forming a plurality of thin-film devices |
US7786467B2 (en) | 2005-04-25 | 2010-08-31 | Hewlett-Packard Development Company, L.P. | Three-dimensional nanoscale crossbars |
US7422981B2 (en) | 2005-12-07 | 2008-09-09 | Canon Kabushiki Kaisha | Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole |
US20070210449A1 (en) | 2006-03-07 | 2007-09-13 | Dirk Caspary | Memory device and an array of conductive lines and methods of making the same |
US8003310B2 (en) | 2006-04-24 | 2011-08-23 | Micron Technology, Inc. | Masking techniques and templates for dense semiconductor fabrication |
JP5309436B2 (en) | 2006-10-16 | 2013-10-09 | 日立化成株式会社 | Resin microstructure, method for producing the same, and polymerizable resin composition |
US8466068B2 (en) | 2007-12-31 | 2013-06-18 | Sandisk 3D Llc | Methods and apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography |
US20100301449A1 (en) | 2007-12-31 | 2010-12-02 | Sandisk 3D Llc | Methods and apparatus for forming line and pillar structures for three dimensional memory arrays using a double subtractive process and imprint lithography |
WO2010041302A1 (en) | 2008-10-06 | 2010-04-15 | 株式会社 東芝 | Variable resistance memory |
-
2007
- 2007-12-31 US US11/967,638 patent/US8466068B2/en not_active Expired - Fee Related
-
2008
- 2008-12-31 JP JP2010540951A patent/JP2011508459A/en active Pending
- 2008-12-31 WO PCT/US2008/088628 patent/WO2009088922A2/en active Application Filing
- 2008-12-31 CN CN200880123672.4A patent/CN101919046B/en not_active Expired - Fee Related
- 2008-12-31 KR KR1020107013806A patent/KR20100120117A/en not_active Application Discontinuation
- 2008-12-31 TW TW097151904A patent/TW200943491A/en unknown
- 2008-12-31 EP EP08870141A patent/EP2227823A4/en not_active Withdrawn
-
2013
- 2013-06-06 US US13/911,294 patent/US20130264675A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010050385A1 (en) * | 1999-04-28 | 2001-12-13 | Kotecki David E. | Method for simultaneously forming a storage-capacitor electrode and interconnect |
US20040125629A1 (en) * | 2002-12-31 | 2004-07-01 | Scheuerlein Roy E. | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
US7462292B2 (en) * | 2004-01-27 | 2008-12-09 | Hewlett-Packard Development Company, L.P. | Silicon carbide imprint stamp |
US7795149B2 (en) * | 2006-06-01 | 2010-09-14 | Micron Technology, Inc. | Masking techniques and contact imprint reticles for dense semiconductor fabrication |
US20080023885A1 (en) * | 2006-06-15 | 2008-01-31 | Nanochip, Inc. | Method for forming a nano-imprint lithography template having very high feature counts |
US7928004B2 (en) * | 2006-06-30 | 2011-04-19 | Advanced Micro Devices, Inc. | Nano imprint technique with increased flexibility with respect to alignment and feature shaping |
Cited By (9)
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---|---|---|---|---|
US9812502B2 (en) | 2015-08-31 | 2017-11-07 | Toshiba Memory Corporation | Semiconductor memory device having variable resistance elements provided at intersections of wiring lines |
US10115771B2 (en) | 2015-08-31 | 2018-10-30 | Toshiba Memory Corporation | Semiconductor memory device and method of manufacturing the same |
US10325957B2 (en) | 2015-08-31 | 2019-06-18 | Toshiba Memory Corporation | Semiconductor memory device and method of manufacturing the same |
US10615226B2 (en) | 2015-08-31 | 2020-04-07 | Toshiba Memory Corporation | Semiconductor memory device and method of manufacturing the same |
US11552129B2 (en) | 2015-08-31 | 2023-01-10 | Kioxia Corporation | Semiconductor memory device having variable resistance elements provided between wiring lines |
US10535669B2 (en) * | 2017-11-23 | 2020-01-14 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices and fabricating methods thereof |
US10770468B2 (en) | 2017-11-23 | 2020-09-08 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices and fabricating methods thereof |
US20220080627A1 (en) * | 2020-09-17 | 2022-03-17 | Kioxia Corporation | Template, template manufacturing method, and semiconductor device manufacturing method |
US11806901B2 (en) * | 2020-09-17 | 2023-11-07 | Kioxia Corporation | Template, template manufacturing method, and semiconductor device manufacturing method |
Also Published As
Publication number | Publication date |
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KR20100120117A (en) | 2010-11-12 |
US8466068B2 (en) | 2013-06-18 |
CN101919046B (en) | 2013-11-06 |
WO2009088922A3 (en) | 2009-09-24 |
TW200943491A (en) | 2009-10-16 |
WO2009088922A2 (en) | 2009-07-16 |
US20090166682A1 (en) | 2009-07-02 |
EP2227823A4 (en) | 2012-04-18 |
EP2227823A2 (en) | 2010-09-15 |
CN101919046A (en) | 2010-12-15 |
JP2011508459A (en) | 2011-03-10 |
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