US20140045347A1 - Systems and methods for processing a film, and thin films - Google Patents
Systems and methods for processing a film, and thin films Download PDFInfo
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- US20140045347A1 US20140045347A1 US14/055,632 US201314055632A US2014045347A1 US 20140045347 A1 US20140045347 A1 US 20140045347A1 US 201314055632 A US201314055632 A US 201314055632A US 2014045347 A1 US2014045347 A1 US 2014045347A1
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Images
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02518—Deposited layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02656—Special treatments
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Definitions
- Such crystallized thin films may be used in the manufacture of a variety of devices, such as image sensors and active-matrix liquid-crystal display (“AMLCD”) devices.
- AMLCD active-matrix liquid-crystal display
- TFTs thin-film transistors
- Crystalline semiconductor films such as silicon films, have been processed to provide pixels for liquid crystal displays using various laser processes including excimer laser annealing (“ELA”) and sequential lateral solidification (“SLS”) processes.
- ELA excimer laser annealing
- SLS sequential lateral solidification
- AMLCD devices AMLCD devices
- OLED organic light emitting diode
- ELA a region of the film is irradiated by an excimer laser to partially melt the film, which subsequently crystallizes.
- the process typically uses a long, narrow beam shape that is continuously advanced over the substrate surface, so that the beam can potentially irradiate the entire semiconductor thin film in a single scan across the surface.
- the Si film is irradiated multiple times to create the random polycrystalline film with a uniform grain size.
- ELA produces small-grained polycrystalline films; however, the method often suffers from microstructural non-uniformities, which can be caused by pulse-to-pulse energy density fluctuations and/or non-uniform beam intensity profiles.
- FIG. 6A illustrates a random microstructure that may be obtained with ELA. This figure, and all subsequent figures, are not drawn to scale, and are intended to be illustrative in nature.
- SLS is a pulsed-laser crystallization process that can produce high quality polycrystalline films having large and uniform grains on substrates, including substrates that are intolerant to heat such as glass and plastics.
- SLS uses controlled laser pulses to fully melt a region of an amorphous or polycrystalline thin film on a substrate. The melted regions of film then laterally crystallize into a solidified lateral columnar microstructure or a plurality of location-controlled large single crystal regions. Generally, the melt/crystallization process is sequentially repeated over the surface of a large thin film, with a large number of laser pulses. The processed film on substrate is then used to produce one large display, or even divided to produce multiple displays, each display being useful for providing visual output in a given device.
- FIGS. 6B-6D shows schematic drawings of TFTs fabricated within films having different microstructures that can be obtained with SLS. SLS processes are described in greater detail below.
- the potential success of SLS systems and methods for commercial use is related to the throughput with which the desired microstructure and texture can be produced.
- the amount of energy and time it takes to produce a film having the microstructure is also related to the cost of producing that film; in general, the faster and more efficiently the film can be produced, the more films can be produced in a given period of time, enabling higher production and thus higher potential revenues.
- the application describes systems and methods for processing thin films, and thin films.
- a method of processing a film comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting; generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a first region of said plurality of spaced-apart regions; directing the laser beam onto a moving at least partially reflective optical element in the path of the laser beam, the moving optical element redirecting the beam so as to scan a first portion of the first region with the beam in a first direction at a first velocity, wherein the first velocity is selected such that the beam irradiates and forms the mixture of solid and liquid in the first portion of the first region, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly
- the laser beam is continuous-wave. Further comprising re-positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a second region of the plurality of spaced-apart regions; and moving the optical element so as to scan a first portion of the second region with the laser beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. Said first velocity is further selected such that heat generated by the beam substantially does not damage the substrate.
- the moving optical element comprises a rotating disk that comprising a plurality of facets that reflect said laser beam onto the film. The first velocity is at least about 0.5 m/s. The first velocity is at least about 1 m/s.
- the method of claim 1 further comprising, after redirecting the beam with the moving optical element so as to scan the first portion of the first region, translating the film relative to the laser beam in a second direction so as to scan a second portion of the first region with the laser beam in the first direction at the first velocity, wherein the second portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
- the second portion of the first region partially overlaps the first portion of the first region. Continuously translating the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region.
- Crystallizing at least the first portion of the first region comprises performing uniform sequential lateral crystallization.
- the uniform sequential lateral crystallization comprises line-scan sequential lateral crystallization.
- Crystallizing at least the first portion of the first region comprises performing Dot sequential lateral crystallization.
- Crystallizing at least the first portion of the first region comprises performing controlled super-lateral growth crystallization. Crystallizing at least the first portion of the first region comprises forming crystals having a pre-determined crystallographic orientation suitable for a channel region of a driver TFT. Further comprising fabricating at least one thin film transistor in at least one of the first and second regions. Further comprising fabricating a plurality of thin film transistors in at least the first and second regions. Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a device of circuit intended to be later fabricated in that region.
- Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region.
- the spaced-apart regions are separated by amorphous film.
- the film comprises at least one of a conductor and a semiconductor.
- the film comprises silicon.
- the substrate comprises glass. Shaping said laser beam using focusing optics.
- Some embodiments provide a system for processing a film, the system comprising a laser source providing a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; a movable at least partially reflective optical element in the path of the laser beam capable of controllably redirecting the path of the laser beam; a stage for supporting the film and capable of translation in at least a first direction; and memory for storing a set of instructions, the instructions comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting; positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a first region of said plurality of spaced-apart regions; moving the movable optical element so as to scan a first portion of the first region with the beam in the first direction at a first velocity, wherein the first velocity is selected such
- the laser beam is continuous-wave. Re-positioning the film relative to the laser beam in preparation for at least partially re-crystallizing a second region of the plurality of spaced-apart regions; and moving the movable optical element so as to scan a first portion of the second region with the beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
- the first velocity is further selected such that heat generated by the beam substantially does not damage the substrate.
- the movable optical element comprises a disk comprising a plurality of facets that at least partially reflect said laser beam onto the film. The first velocity is at least about 0.5 m/s.
- the first velocity is at least about 1 m/s.
- the memory further includes instructions to, after moving the movable optical element so as to scan the first portion of the first region, translate the film relative to the laser beam in a second direction so as to scan a second portion of the first region with the laser beam in the first direction at the first velocity, wherein the second portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
- the memory further includes instructions to partially overlap the first and second portions of the first region.
- the memory further includes instructions to continuously translate the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region.
- the memory further includes instructions to continuously translate the film in the second direction with the second velocity for a period of time selected to sequentially irradiate and partially melt a plurality of portions of the first region, wherein each of said plurality of portions upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
- the memory further includes instructions to perform uniform sequential lateral crystallization in at least the first region.
- the memory further includes instructions for defining a width for each spaced-apart region that is at least as large as a device or circuit intended to be later fabricated in that region.
- the memory further includes instructions for defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region.
- the film comprises at least one of a conductor and a semiconductor.
- the film comprises silicon.
- the substrate comprises glass. Further comprising laser optics to shape said laser beam.
- Some embodiments provide a thin film, the thin film comprising columns of pre-crystallized film positioned and sized so that rows and columns of TFTs can later be fabricated in said columns of pre-crystallized film, said columns of pre-crystallized film comprising crystalline grains having predominantly the same crystallographic orientation in at least a single direction; and columns of untreated film between said columns of pre crystallized film.
- Said crystallographic orientation in said at least a single direction is substantially normal to the surface of the film.
- Said crystallographic orientation in said at least a single direction is a ⁇ 100> orientation.
- the columns of untreated film comprise amorphous film.
- Some embodiments provide a method of processing a film, the method comprising defining at least one region within the film, the film being disposed on a substrate and capable of laser-induced melting; generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; directing the laser beam onto a moving optical element that is at least partially reflective, said moving optical element directing the laser beam across a first portion of the first region in a first direction at a first velocity; moving the film relative to the laser beam in a second direction and at a second velocity to displace the film along the second direction during laser irradiation of the first portion while moving the optical element, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction, wherein the first velocity is selected such that the beam irradiates and forms a mixture of solids and liquid in the first portion of the film; and repeating
- the laser beam is continuous-wave. Further comprising re-positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a second region of the plurality of spaced-apart regions; and moving the optical element so as to scan a first portion of the second region with the laser beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. Said first velocity is further selected to avoid heat generation by the beam that damages the substrate. Directing the moving optical element comprises rotating a disk that comprises a plurality of facets that reflect said laser beam onto the film. The first velocity is at least about 0.5 m/s.
- the first velocity is at least about 1 m/s.
- the steps of moving the optical element and moving the film provide first and second portions of the first region having predominantly the same crystallographic orientation and the second portion of the first region partially overlaps the first portion of the first region. Continuously translating the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region. Continuously translating the film in the second direction with a second velocity for a period of time selected to sequentially irradiate and partially melt a plurality of portions of the first region, wherein each of said plurality of portions upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
- Said crystallographic orientation in said at least a single direction is substantially normal to the surface of the film.
- Said crystallographic orientation in said at least a single direction is a ⁇ 100> orientation.
- the uniform sequential lateral crystallization comprises line-scan sequential lateral crystallization.
- Crystallizing at least the first portion of the first region comprises performing Dot sequential lateral crystallization.
- Crystallizing at least the first portion of the first region comprises performing controlled super-lateral growth crystallization.
- Crystallizing at least the first portion of the first region comprises forming crystals having a pre-determined crystallographic orientation suitable for a channel region of a driver TFT. Further comprising fabricating at least one thin film transistor in at least one of the first and second regions. Further comprising fabricating a plurality of thin film transistors in at least the first and second regions. Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a device or circuit intended to be later fabricated in that region. Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region. The spaced-apart regions are separated by amorphous film.
- the film comprises at least one of a conductor and a semiconductor.
- the film comprises silicon.
- the substrate comprises glass. Shaping said laser beam using focusing optics.
- FIG. 1 illustrates a thin film with regions pre-crystallized with high throughput pre-crystallization according to some embodiments.
- FIG. 2 illustratively displays a method for the high throughput pre-crystallization of a thin film and optional subsequent TFT fabrication according to some embodiments.
- FIG. 3 is a schematic diagram of an apparatus for high throughput pre-crystallization of a thin film according to some embodiments.
- FIG. 4A-4B illustrates the pre-crystallization of a TFT region using a high throughput pre-crystallization apparatus according to some embodiments.
- FIG. 5 is a schematic diagram of an apparatus for sequential lateral crystallization of a semiconductor film according to some embodiments.
- FIG. 6A illustrates crystalline microstructures formed by excimer laser annealing.
- FIGS. 6B-6D illustrate crystalline microstructures formed by sequential lateral crystallization.
- FIGS. 7A-7D illustrate schematically processes involved in and microstructures formed by sequential lateral crystallization according to some embodiments.
- the textured films contain grains having predominantly the same crystallographic orientation in at least a single crystallographic orientation.
- the thin films are suitable for further processing with SLS or other lateral growth processes, as discussed in greater detail below.
- SLS the crystal orientation of lateral growth during SLS depends on the orientation of the material at the boundary of the irradiated region.
- the total resistance to carrier transport within the TFT channel is affected by the combination of barriers that a carrier has to cross as it travels under the influence of a given potential.
- a carrier crosses many more grain boundaries if it travels perpendicularly to the long grain axes of the polycrystalline material, and thus experiences a higher resistance, than if it travels parallel to the long grain axes.
- the performance of TFT devices fabricated on SLS-processed polycrystalline films depends on the microstructure of the film in the channel, relative to the film's long grain axes.
- SLS is not able to fully define the crystallographic texture of those grains, because they grow epitaxially from existing grains that do not themselves necessarily have a well-defined crystallographic texture.
- Pre-crystallizing a thin film can improve the crystal alignment, e.g., texture, obtained during subsequent lateral crystallization processes, and can allow separate control and optimization of the texture and the microstructure of the film.
- Pre-crystallizing the film generates a textured film having crystal grains with predominantly the same crystallographic orientation in at least one direction. For example, if one crystallographic axis of most crystallites in a thin polycrystalline film points preferentially in a given direction, the film is referred to as having a one-axial texture.
- the preferential direction of the one-axial texture is a direction normal to the surface of the crystallites.
- “texture” refers to a one-axial surface texture of the grains as used herein.
- the crystallites have a (100) texture.
- the degree of texture can vary depending on the particular application. For example, a high degree of texture can improve the performance of thin film transistor (TFT) being used for a driver circuit, but not provide as significant a benefit to a TFT that is used for a switch circuit.
- TFT thin film transistor
- ZMR mixed-phase zone-melt recrystallization
- CW continuous wave
- irradiation causes some parts of the film to completely melt while others remain unmelted, forming a “transition region” which exists as a result of a significant increase in reflectivity of Si upon melting (a semiconductor-metal transition). Crystal grains having (100) texture form in this transition region.
- pre-crystallizing an entire panel to get (100) large-grain material can be time consuming, as typical CW laser sources have limited power.
- pre-crystallizing a silicon film with a CW laser can significantly heat the film and underlying substrate due to the continuous radiation.
- sufficient heat can be generated to cause the substrate to warp or actually melt and damage the substrate.
- a glass substrate benefits from a scan velocity of at least about 1 m/s in order to avoid damage.
- the pre-crystallization systems and methods described herein allow the film to be scanned at high scan velocities, which helps to prevent heat damage to the underlying substrate.
- the systems can use conventional (e.g., relatively slow) handling stages to move large substrates, and at the same time can provide scan velocities of about 1 m/s, or even higher.
- a handling stage moves the film and substrate at a typical scan velocity in one direction, while moving optics scan a laser beam across the film at a much higher velocity in a different, e.g., perpendicular, direction.
- the motions of the stage and laser beam are coordinated so that defined regions of the film are pre-crystallized, and other regions are left untreated. This increases the effective scanning velocity of the film above a threshold at which the substrate would be damaged, and greatly improves the efficiency of pre-crystallizing the film.
- the systems and methods also are capable of reducing the overall time to process the film.
- the film is pre-crystallized in regions of the film where devices that benefit from controlled crystallographic texture, e.g., regions that contain the most demanding circuitry, will be fabricated. In some embodiments, these regions are on the periphery of a display, where the integration TFTs will be fabricated. Regions of the film where such devices will not be located, or devices not requiring controlled crystallographic texture, are not pre-crystallized.
- the speed with which panels are pre-crystallized are approximately matched to the throughput rate of SLS systems and methods, with which the pre-crystallization systems and methods can be incorporated.
- FIG. 1 illustrates an embodiment of a silicon film 300 that is pre-crystallized in defined regions, and left untreated in other regions.
- the defined regions can be selected for a variety of reasons, such as that devices benefiting from improved crystalline texture will eventually be fabricated there.
- the defined regions correspond to TFT channels.
- the film includes areas of pre-crystallized silicon 325 , and areas of untreated silicon 310 .
- the areas are positioned and sized so that rows and columns of TFTs can optionally be subsequently fabricated within the areas of pre-crystallized silicon 325 , e.g., with SLS and other processing steps.
- the untreated regions 310 can be uncrystallized silicon, e.g., amorphous silicon, or can be, e.g., polycrystalline silicon.
- the areas of untreated and pre-crystallized silicon are illustrated to have approximately the same width, the area widths and relative spacing can vary, depending on the desired area of the display and the width of the integration regions.
- the integration regions can be only several mm wide for a display that can have a diagonal of several inches.
- the pre-crystallized silicon columns 325 can be fabricated to be substantially narrower than the untreated areas 310 . This will further improve the efficiency with which the film can be processed, because large regions of the film will not need to be pre-crystallized.
- the width of the pre-crystallized regions needs only to be long enough to cover the area for integration circuits.
- FIG. 2 illustratively displays a method 400 for the high throughput pre-crystallization, and optional subsequent processing of a semiconductor film to form TFTs, according to certain embodiments.
- the regions to be pre-crystallized are defined ( 410 ).
- the defined regions optionally correspond to areas in which TFT circuits will be fabricated, as described above.
- the area widths and spacings are selected according to the requirements of the device that will eventually be fabricated using the film.
- the film is pre-crystallized in the defined regions ( 420 ). In some embodiments, this is done with a continuous wave (CW) laser as described in greater detail below.
- the laser partially melts the film, which crystallizes to have a desired texture.
- the textured film contains grains having predominantly the same crystallographic orientation in at least a single direction. However, the grains are randomly located on the film surface, and are of no particular size.
- the film is optionally laterally crystallized ( 430 ).
- this is done with SLS processes, for example as described in greater detail below.
- SLS processes see U.S. Pat. Nos. 6,322,625, 6,368,945, 6,555,449, and 6,573,531, the entire contents of which are incorporated herein by reference.
- TFTs are optionally fabricated within the defined regions ( 440 ). This can be done with silicon island formation, in which the film is etched to remove excess silicon except where the TFTs are to be fabricated. Then, the remaining “islands” are processed using techniques known in the art to form active TFTs, including source and drain contact regions as illustrated in FIG. 6A .
- the SLS process need not be performed solely within the pre-crystallized regions.
- the entire film, or portions thereof can be laterally crystallized with SLS.
- TFTs can be fabricated at desired locations within the laterally crystallized regions of the film, such that some or all of the TFTs are fabricated within the regions that were originally pre-crystallized. Determining which steps to perform on a given region of the film depends on the performance requirements of the finished device.
- FIG. 3 schematically illustrates an embodiment of a system that can be used for precrystallizing a thin film.
- the system includes a rotating disk with a plurality of facets, each of which is at least partially reflective for the laser beam wavelength.
- the laser beam is directed at the rotating disk, which is arranged such that the facets redirects the laser beam so that it irradiates the film.
- the disk rotates, it causes the laser beam to scan the surface of the film, thus pre-crystallizing successive portions of the film.
- each new facet that reflects the laser beam effectively “re-sets” the position of the beam relative to the film in the direction of rotation, bringing the laser beam back to its starting point on the film in that direction.
- the film is translated in another direction, e.g., perpendicular to the scan direction, so that as the disk continues to rotate, new facets reflect the laser beam onto successive portions of the film that are displaced from each other in the second direction.
- new facets reflect the laser beam onto successive portions of the film that are displaced from each other in the second direction.
- pre-crystallization system 500 that can be used to pre-crystallize a thin film 515 within defined region 520 .
- a laser (not shown), e.g., an 18 W, 2 ⁇ Nd:YV0 4 Verdi laser from Coherent Inc., generates a CW laser beam 540 .
- One or more optics shape laser beam 540 so that it forms a thin line beam.
- the beam has a length of between about 1-15 mm, a width of between about 5-50 ⁇ m, and a fluence of between about 10-150 W/mm of beam length.
- the beam may have any desired length, and in some cases may be a “line beam” having a very high length to width aspect ratio (e.g., about 50-10 5 ), and may even extend for the full length of the panel being irradiated. In this case, the film need not be scanned in the second direction, because the entire length of a given region will be irradiated at once.
- the beam has approximately uniform energy along the long axis, although in other embodiments the beam will have other energy profiles such as Gaussian or sinusoidal.
- the beam along the short axis has a “top hat” energy profile, i.e., having substantially equal energy across the short axis profile of the beam, and in other embodiments, the beam has a tightly focused Gaussian profile along the short axis.
- Other energy profiles, and other beam sizes, are possible and can be selected according to the performance requirements of the finished device.
- the overall beam power, as well as the size of the beam, is selected to provide a sufficient energy density to partially melt the film 515 so that it recrystallizes with the desired amount of texture.
- the laser beam need not be CW, but can also have any suitable temporal profile, for example sufficiently long pulses to partially melt the irradiated regions, or have a relatively high repetition rate (“quasi-CW”).
- the laser beam is directed towards a rotating disk 560 having a plurality of at least partially reflective surfaces or facets 580 .
- Reflective facets 580 of disk 560 are positioned relative to film 575 so as to direct laser beam 540 towards the film surface.
- facets 580 are arranged so as to redirect laser beam 540 so that it irradiates film 515 within defined region 520 .
- the laser beam irradiates region 520 , it partially melts the film, which crystallizes upon cooling as described in greater detail in U.S. Patent Publication No. 2006/0102901.
- Disk 560 rotates about axis 570 .
- This rotation moves facets 580 relative to laser beam 540 , so that they behave as a moving mirror for the laser beam, and guide the beam in a line across the substrate.
- the movement of facets 580 move laser beam 540 rapidly relative to film 515 in the ( ⁇ y) direction.
- the relative velocity v scan of the beam relative to the film 515 in the ( ⁇ y) direction is determined by the speed of rotation of disk 560 .
- the velocity of the beam imparted by the disk is substantially higher than could be generated by moving the substrate with typical mechanical stage.
- stage 518 moves film 515 in the (+x) direction with a velocity v stage , perpendicular to the direction of beam motion.
- the total beam velocity relative to a given point of the film can be substantially higher than normally achievable using stage 518 alone.
- the irradiation pattern of the film surface is defined by the state scanning speed and direction as well as the facet size and rotation rate of the disk, as well as the distance between the disk and the film.
- FIG. 3 shows faceted disk 560 with eight facets 580 , this number of facets is meant to be illustrative only. In general, other ways of deflecting the beam in order to provide high velocity scanning are contemplated, for example, a single movable mirror. Or, for example, other numbers of facets can be used, according to the desired processing speed and size of pre-crystallized regions 520 .
- FIG. 4A illustrates a detailed view of the path of laser beam 540 relative to the substrate 610 .
- a first facet 580 reflects beam 540 so that it first irradiates substrate 610 at a first edge 621 of the defined film region 620 to be pre-crystallized, starting a “first scan” of the region.
- Disk 560 continues to rotate the given facet 580 , so that the beam moves across film region 620 in the ( ⁇ y) direction with a velocity v scan .
- stage 518 moves substrate 610 in the (+x) direction with a velocity v stage resulting in a diagonal crystallization path.
- the width w scan of a particular scanned region is defined by the length of the laser beam in that region, and the edge of the scanned region follows a “diagonal” path relative to the substrate, defined by v scan and v stage , as described in greater detail below.
- the first facet 580 eventually rotates far enough that it no longer reflects beam 540 .
- the beam stops irradiating the defined region 620 at second edge 622 which coincides with the other edge defining the preselected region 620 .
- the laser beam 540 is directed onto a second facet 580 .
- Second facet 580 redirects laser beam 540 so that it irradiates substrate 610 at a first edge 621 of the defined film region 620 , starting a “second scan” of the region.
- the stage has moved the substrate 610 by a predetermined distance (based on stage velocity) in the (+x) direction relative to where it was at the beginning of the first scan.
- This offset can be chosen to provide a desired amount of overlap between the first and second scans.
- pre-crystallizing a film multiple times can enlarge the size of preferably oriented grains, so it may be desirable to use a relatively small offset to provide a large amount of overlap between the first and second scanned areas.
- second facet 580 moves the beam 540 across region 620 in the ( ⁇ y) direction
- stage 518 moves substrate 610 in the (+x) direction.
- the second facet 580 moves out of the path of beam 540
- a third facet 580 reflects the beam 540 to irradiate region 620 , again offset in the (+x) direction by an amount determined by speed v stage .
- defined film region 620 is substantially pre-crystallized, while other regions of substrate 610 are not pre-crystallized and remain, e.g., amorphous silicon.
- the stage moves the substrate 610 in the ( ⁇ x) and (+y) or ( ⁇ y) direction, so that a new region can be pre-crystallized as described above.
- FIG. 4A shows a non-pre-crystallized area at the bottom of defined film region 620 , resulting from the “diagonal” motion of the beam relative to the substrate, this area can be pre-crystallized by simply starting the first scan below the edge of the substrate. Alternately, the bottom of the substrate can be trimmed, or TFTs simply not fabricated on that particular area.
- the combination of beam velocity v scan in the ( ⁇ y) direction and stage velocity v stage in the (+x) direction yields an effective scan velocity v scan,eff .
- This velocity v scan,eff . is elected so that the beam travels fast enough not to damage the substrate 610 , but slow enough to partially melt the defined film region 620 to the desired degree.
- the frequency of scanning f scan is given by:
- v scan is the scan velocity, as described above, and l scan is the length of the region to be scanned, i.e., they-dimension of the pre-treated area.
- the scan frequency will be 250 Hz.
- the beam with w scan follows from:
- the scanning velocity is held to be substantially constant, as opposed to following, for example, a sinusoid trace.
- disk 560 rotates at a substantially constant speed, which causes beam 540 to also move at a substantially constant speed. Translation of the stage allows a new region to be pre-crystallized.
- the semiconductor film is first pre-crystallized in defined regions, and then laterally crystallized everywhere.
- the pre-crystallized regions will have more highly aligned crystals than the non-pre-crystallized regions, although all the regions of the film will be laterally crystallized.
- the regions that are both pre-crystallized and laterally crystallized can be used to fabricate devices that are particularly sensitive to microstructure, such as integration TFTs; the non-pre-crystallized regions can be used to fabricate devices that are less sensitive to microstructure, but still benefit from lateral crystals, such as pixel TFTs.
- Pre-crystallizing the film only in regions needing improved crystalline alignment can save time and energy over pre-crystallizing the entire semiconductor film.
- the semiconductor film is laterally crystallized following pre-crystallization.
- One suitable protocol referred to herein as “uniform-grain sequential lateral solidification,” or “uniform SLS,” may be used to prepare a uniform crystalline film characterized by repeating columns of laterally elongated crystals. Uniform crystal growth is described with reference to FIGS. 7A-7D .
- the crystallization protocol involves advancing the film by an amount greater than the characteristic lateral growth length, e.g., ⁇ >LGL, where ⁇ is the translation distance between pulses, and less than two times the characteristic lateral growth length, e.g., ⁇ 2 LGL.
- LGL characteristic lateral growth length
- the term “characteristic lateral growth length” refers to the characteristic distance the crystals grow when cooling.
- the LGL is a function of the film composition, film thickness, the substrate temperature, the laser pulse characteristics, the buffer layer material, if any, and the optical configuration.
- a typical LGL for 50 nm thick silicon films is approximately 1-5 ⁇ m or about 2.5 ⁇ m.
- the actual growth may be limited by other laterally growing fronts, e.g., where two fronts collide as illustrated below.
- a first irradiation is carried out on a film with a narrow, e.g., less than two times the lateral growth length, and elongated, e.g., greater than 10 mm and up to or greater than 1000 mm, laser beam pulse having an energy density sufficient to completely melt the film.
- the film exposed to the laser beam shown as region 400 in FIG. 7A
- the film exposed to the laser beam is melted completely and then crystallized.
- grains grow laterally from an interface 420 between the unirradiated region and the melted region.
- the grains grow epitaxially from the solidus boundaries on either side of the melted region.
- the laterally growing grains adopt the texture of the pre-crystallized film, formed as described above.
- the laser pulse width so that the molten zone width is less than about two times the characteristic LGL
- the grains growing from both solid/melt interfaces collide with one another approximately at the center of the melted region, e.g., at centerline 405 , and the lateral growth stops.
- the two melt fronts collide approximately at the centerline 405 before the temperature of the melt becomes sufficiently low to trigger nucleation.
- a second region of the substrate 400 ′ is irradiated with a second laser beam pulse.
- the displacement of the substrate, ⁇ is related to the desired degree of overlap of the laser beam pulse. As the displacement of the substrate becomes longer, the degree of overlap becomes less. It is advantageous and preferable to have the overlap degree of the laser beam to be less than about 90% and more than about 10% of the LGL.
- the overlap region is illustrated by brackets 430 and dashed line 435 .
- the film region 400 ′ exposed to the second laser beam irradiation melts completely and crystallizes.
- FIG. 7C illustrates a region 440 having crystals that are laterally extended beyond a lateral growth length.
- a column of elongated crystals are formed by two laser beam irradiations on average. Because two irradiation pulses are all that is required to form the column of laterally extended crystals, the process is also referred to as a “two shot” process. Irradiation continues across the substrate to create multiple columns of laterally extended crystals.
- FIG. 7D illustrates the microstructure of the substrate after multiple irradiations and depicts several columns 440 of laterally extended crystals.
- a film is irradiated and melted with a low number of pulses, e.g., two.
- the crystals that form within the melted regions preferably grow laterally and with a similar orientation, and meet each other at a boundary within the particular irradiated region of film.
- the width of the irradiation pattern is preferably selected so that the crystals grow without nucleation. In such instances, the grains are not significantly elongated; however, they are of uniform size and orientation.
- WO 20061107926 entitled “Line Scan Sequential Lateral Solidification of Thin Films,” the entire contents of which are incorporated herein by reference.
- Other lateral crystallization methods that provide relatively short elongations of crystal grains are also suitable, for example so-called “Dot-SLS” methods as described in U.S. Patent Publication number 2006/0102901, as well as controlled super-lateral growth, or “C-SLG” methods, as described in PCT Publication No. WO US03/25947, the entire contents of which are incorporated herein by reference.
- FIG. 5 illustrates an SLS system according to some embodiments.
- a light source for example, an excimer laser 710 generates a laser beam which then passes through a pulse duration extender 720 and attenuator plates 725 prior to passing through optical elements such as mirrors 730 , 740 , 760 , telescope 735 , homogenizer 745 , beam splitter 755 , and lens 765 .
- the laser beam pulses are then passed through a mask 770 , which may be on a translation stage (not shown), and projection optics 795 .
- the mask can be a slit, which shapes the laser beam into a “line beam,” although the system is capable of making more complex beam shapes depending on the choice of mask.
- the projection optics reduce the size of the laser beam and simultaneously increase the intensity of the optical energy striking substrate 799 at a desired location.
- the substrate 799 is provided on a precision x-y-z stage 800 that can accurately position the substrate 799 under the beam and assist in focusing or defocusing the image of the mask 770 produced by the laser beam at the desired location on the substrate.
- the firing of the laser can be coordinated with the motion of x-y-z stage 800 to provide location-controlled firing of pulses.
- the thin film can be a semiconductor or a conductor, such as a metal.
- exemplary metals include aluminum, copper, nickel, titanium, gold, and molybdenum.
- Exemplary semiconductor films include conventional semiconductor materials, such as silicon, germanium, and silicon-germanium. Additional layers situated beneath or above the metal or semiconductor film are contemplated, for example, silicon oxide, silicon nitride and/or mixtures of oxide, nitride, or other materials that are suitable, for example, for use as a thermal insulator to further protect the substrate from overheating or as a diffusion barrier to prevent diffusion or impurities from the substrate to the film. See, e.g., PCT Publication No. WO 2003/084688, for methods and systems for providing an aluminum thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization.
Abstract
In some embodiments, a method of processing a film is provided, the method comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting; generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a first region of said plurality of spaced-apart regions; directing the laser beam onto a moving at least partially reflective optical element in the path of the laser beam, the moving optical element redirecting the beam so as to scan a first portion of the first region with the beam in a first direction at a first velocity, wherein the first velocity is selected such that the beam irradiates and forms the mixture of solid and liquid in the first portion of the first region, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction; and crystallizing at least the first portion of the first region using laser induced melting.
Description
- This application is a division of and claims the benefit under 35 U.S.C. §121 of U.S. application Ser. No. 12/095,450, filed on Sep. 16, 2008, entitled “Systems and Methods for Processing a Film, and Thin Film,” the contents of which are incorporated herein by reference, which is a U.S. National Phase application under 35 U.S.C. §371 of International Patent Application No. PCT/US2006/046405, filed Dec. 5, 2006, entitled “SYSTEMS AND METHODS FOR PROCESSING A FILM, AND THIN FILMS,” which claims the benefit under 35 U.S.C. §119(e) of the following application, the entire contents of which are incorporated herein by reference:
-
- U.S. Provisional Patent Application Ser. No. 60/742,276, filed Dec. 5, 2005 and entitled “Scheme for Crystallizing Films Using a Continuous-Wave Light Source Compatible With Glass Substrates And Existing Precision Stages.”
- Systems and methods for processing a film, and thin films, are provided.
- In recent years, various techniques for crystallizing or improving the crystallinity of an amorphous or polycrystalline semiconductor film have been investigated. Such crystallized thin films may be used in the manufacture of a variety of devices, such as image sensors and active-matrix liquid-crystal display (“AMLCD”) devices. In the latter, a regular array of thin-film transistors (“TFTs”) is fabricated on an appropriate transparent substrate, and each transistor serves as a pixel controller.
- Crystalline semiconductor films, such as silicon films, have been processed to provide pixels for liquid crystal displays using various laser processes including excimer laser annealing (“ELA”) and sequential lateral solidification (“SLS”) processes. SLS is well suited to process thin films for use in AMLCD devices, as well as organic light emitting diode (“OLED”) devices.
- In ELA, a region of the film is irradiated by an excimer laser to partially melt the film, which subsequently crystallizes. The process typically uses a long, narrow beam shape that is continuously advanced over the substrate surface, so that the beam can potentially irradiate the entire semiconductor thin film in a single scan across the surface. The Si film is irradiated multiple times to create the random polycrystalline film with a uniform grain size. ELA produces small-grained polycrystalline films; however, the method often suffers from microstructural non-uniformities, which can be caused by pulse-to-pulse energy density fluctuations and/or non-uniform beam intensity profiles.
FIG. 6A illustrates a random microstructure that may be obtained with ELA. This figure, and all subsequent figures, are not drawn to scale, and are intended to be illustrative in nature. - SLS is a pulsed-laser crystallization process that can produce high quality polycrystalline films having large and uniform grains on substrates, including substrates that are intolerant to heat such as glass and plastics. SLS uses controlled laser pulses to fully melt a region of an amorphous or polycrystalline thin film on a substrate. The melted regions of film then laterally crystallize into a solidified lateral columnar microstructure or a plurality of location-controlled large single crystal regions. Generally, the melt/crystallization process is sequentially repeated over the surface of a large thin film, with a large number of laser pulses. The processed film on substrate is then used to produce one large display, or even divided to produce multiple displays, each display being useful for providing visual output in a given device.
FIGS. 6B-6D shows schematic drawings of TFTs fabricated within films having different microstructures that can be obtained with SLS. SLS processes are described in greater detail below. - The potential success of SLS systems and methods for commercial use is related to the throughput with which the desired microstructure and texture can be produced. The amount of energy and time it takes to produce a film having the microstructure is also related to the cost of producing that film; in general, the faster and more efficiently the film can be produced, the more films can be produced in a given period of time, enabling higher production and thus higher potential revenues.
- The application describes systems and methods for processing thin films, and thin films.
- In some embodiments, a method of processing a film is provided, the method comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting; generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a first region of said plurality of spaced-apart regions; directing the laser beam onto a moving at least partially reflective optical element in the path of the laser beam, the moving optical element redirecting the beam so as to scan a first portion of the first region with the beam in a first direction at a first velocity, wherein the first velocity is selected such that the beam irradiates and forms the mixture of solid and liquid in the first portion of the first region, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction; and crystallizing at least the first portion of the first region using laser-induced melting.
- Some embodiments include one or more of the following features. The laser beam is continuous-wave. Further comprising re-positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a second region of the plurality of spaced-apart regions; and moving the optical element so as to scan a first portion of the second region with the laser beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. Said first velocity is further selected such that heat generated by the beam substantially does not damage the substrate. The moving optical element comprises a rotating disk that comprising a plurality of facets that reflect said laser beam onto the film. The first velocity is at least about 0.5 m/s. The first velocity is at least about 1 m/s.
- The method of
claim 1, further comprising, after redirecting the beam with the moving optical element so as to scan the first portion of the first region, translating the film relative to the laser beam in a second direction so as to scan a second portion of the first region with the laser beam in the first direction at the first velocity, wherein the second portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. The second portion of the first region partially overlaps the first portion of the first region. Continuously translating the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region. Continuously translating the film in the second direction with a second velocity for a period of time selected to sequentially irradiate and a plurality of portions of the first region, wherein each of said plurality of portions upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. Said crystallographic orientation in said at least a single direction is substantially normal to the surface of the film. Said crystallographic orientation in said at least a single direction is a <100> orientation. Crystallizing at least the first portion of the first region comprises performing uniform sequential lateral crystallization. The uniform sequential lateral crystallization comprises line-scan sequential lateral crystallization. Crystallizing at least the first portion of the first region comprises performing Dot sequential lateral crystallization. Crystallizing at least the first portion of the first region comprises performing controlled super-lateral growth crystallization. Crystallizing at least the first portion of the first region comprises forming crystals having a pre-determined crystallographic orientation suitable for a channel region of a driver TFT. Further comprising fabricating at least one thin film transistor in at least one of the first and second regions. Further comprising fabricating a plurality of thin film transistors in at least the first and second regions. Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a device of circuit intended to be later fabricated in that region. Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region. The spaced-apart regions are separated by amorphous film. The film comprises at least one of a conductor and a semiconductor. The film comprises silicon. The substrate comprises glass. Shaping said laser beam using focusing optics. - Some embodiments provide a system for processing a film, the system comprising a laser source providing a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; a movable at least partially reflective optical element in the path of the laser beam capable of controllably redirecting the path of the laser beam; a stage for supporting the film and capable of translation in at least a first direction; and memory for storing a set of instructions, the instructions comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting; positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a first region of said plurality of spaced-apart regions; moving the movable optical element so as to scan a first portion of the first region with the beam in the first direction at a first velocity, wherein the first velocity is selected such that the beam forms a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in the first portion of the first region, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction.
- Some embodiments include one or more of the following features. The laser beam is continuous-wave. Re-positioning the film relative to the laser beam in preparation for at least partially re-crystallizing a second region of the plurality of spaced-apart regions; and moving the movable optical element so as to scan a first portion of the second region with the beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. The first velocity is further selected such that heat generated by the beam substantially does not damage the substrate. The movable optical element comprises a disk comprising a plurality of facets that at least partially reflect said laser beam onto the film. The first velocity is at least about 0.5 m/s. The first velocity is at least about 1 m/s. The memory further includes instructions to, after moving the movable optical element so as to scan the first portion of the first region, translate the film relative to the laser beam in a second direction so as to scan a second portion of the first region with the laser beam in the first direction at the first velocity, wherein the second portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. The memory further includes instructions to partially overlap the first and second portions of the first region. The memory further includes instructions to continuously translate the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region. The memory further includes instructions to continuously translate the film in the second direction with the second velocity for a period of time selected to sequentially irradiate and partially melt a plurality of portions of the first region, wherein each of said plurality of portions upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. The memory further includes instructions to perform uniform sequential lateral crystallization in at least the first region. The memory further includes instructions for defining a width for each spaced-apart region that is at least as large as a device or circuit intended to be later fabricated in that region. The memory further includes instructions for defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region. The film comprises at least one of a conductor and a semiconductor. The film comprises silicon. The substrate comprises glass. Further comprising laser optics to shape said laser beam.
- Some embodiments provide a thin film, the thin film comprising columns of pre-crystallized film positioned and sized so that rows and columns of TFTs can later be fabricated in said columns of pre-crystallized film, said columns of pre-crystallized film comprising crystalline grains having predominantly the same crystallographic orientation in at least a single direction; and columns of untreated film between said columns of pre crystallized film.
- Some embodiments include one or more of the following features. Said crystallographic orientation in said at least a single direction is substantially normal to the surface of the film. Said crystallographic orientation in said at least a single direction is a <100> orientation. The columns of untreated film comprise amorphous film.
- Some embodiments provide a method of processing a film, the method comprising defining at least one region within the film, the film being disposed on a substrate and capable of laser-induced melting; generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; directing the laser beam onto a moving optical element that is at least partially reflective, said moving optical element directing the laser beam across a first portion of the first region in a first direction at a first velocity; moving the film relative to the laser beam in a second direction and at a second velocity to displace the film along the second direction during laser irradiation of the first portion while moving the optical element, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction, wherein the first velocity is selected such that the beam irradiates and forms a mixture of solids and liquid in the first portion of the film; and repeating the steps of moving the optical element and moving the film at least once to crystallize the first region.
- Some embodiments include one or more of the following features. The laser beam is continuous-wave. Further comprising re-positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a second region of the plurality of spaced-apart regions; and moving the optical element so as to scan a first portion of the second region with the laser beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. Said first velocity is further selected to avoid heat generation by the beam that damages the substrate. Directing the moving optical element comprises rotating a disk that comprises a plurality of facets that reflect said laser beam onto the film. The first velocity is at least about 0.5 m/s. The first velocity is at least about 1 m/s. The steps of moving the optical element and moving the film provide first and second portions of the first region having predominantly the same crystallographic orientation and the second portion of the first region partially overlaps the first portion of the first region. Continuously translating the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region. Continuously translating the film in the second direction with a second velocity for a period of time selected to sequentially irradiate and partially melt a plurality of portions of the first region, wherein each of said plurality of portions upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction. Said crystallographic orientation in said at least a single direction is substantially normal to the surface of the film. Said crystallographic orientation in said at least a single direction is a <100> orientation. Further comprising subjecting the film to a subsequent sequential lateral crystallization process to generate location controlled grains having wherein crystallizing at least the first portion of the first region comprises performing uniform sequential lateral crystallization. The uniform sequential lateral crystallization comprises line-scan sequential lateral crystallization. Crystallizing at least the first portion of the first region comprises performing Dot sequential lateral crystallization. Crystallizing at least the first portion of the first region comprises performing controlled super-lateral growth crystallization. Crystallizing at least the first portion of the first region comprises forming crystals having a pre-determined crystallographic orientation suitable for a channel region of a driver TFT. Further comprising fabricating at least one thin film transistor in at least one of the first and second regions. Further comprising fabricating a plurality of thin film transistors in at least the first and second regions. Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a device or circuit intended to be later fabricated in that region. Defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region. The spaced-apart regions are separated by amorphous film. The film comprises at least one of a conductor and a semiconductor. The film comprises silicon. The substrate comprises glass. Shaping said laser beam using focusing optics.
- In the drawing:
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FIG. 1 illustrates a thin film with regions pre-crystallized with high throughput pre-crystallization according to some embodiments. -
FIG. 2 illustratively displays a method for the high throughput pre-crystallization of a thin film and optional subsequent TFT fabrication according to some embodiments. -
FIG. 3 is a schematic diagram of an apparatus for high throughput pre-crystallization of a thin film according to some embodiments. -
FIG. 4A-4B illustrates the pre-crystallization of a TFT region using a high throughput pre-crystallization apparatus according to some embodiments. -
FIG. 5 is a schematic diagram of an apparatus for sequential lateral crystallization of a semiconductor film according to some embodiments. -
FIG. 6A illustrates crystalline microstructures formed by excimer laser annealing. -
FIGS. 6B-6D illustrate crystalline microstructures formed by sequential lateral crystallization. -
FIGS. 7A-7D illustrate schematically processes involved in and microstructures formed by sequential lateral crystallization according to some embodiments. - Systems and methods described herein provide pre-crystallized thin films having controlled crystallographic texture. The textured films contain grains having predominantly the same crystallographic orientation in at least a single crystallographic orientation. The thin films are suitable for further processing with SLS or other lateral growth processes, as discussed in greater detail below. In SLS, the crystal orientation of lateral growth during SLS depends on the orientation of the material at the boundary of the irradiated region. By pre-crystallizing the film before performing SLS, the crystals that laterally grow during SLS adopt the crystalline orientation generated during pre-crystallization, and thus grow with an improved crystalline orientation relative to crystal grains grown without pre-crystallization. The pre-crystallized and laterally crystallized film can then be processed to form TFTs, and ultimately be used as a display device.
- When a polycrystalline material is used to fabricate devices having TFTs, the total resistance to carrier transport within the TFT channel is affected by the combination of barriers that a carrier has to cross as it travels under the influence of a given potential. Within a material processed by SLS, a carrier crosses many more grain boundaries if it travels perpendicularly to the long grain axes of the polycrystalline material, and thus experiences a higher resistance, than if it travels parallel to the long grain axes. Thus, in general, the performance of TFT devices fabricated on SLS-processed polycrystalline films depends on the microstructure of the film in the channel, relative to the film's long grain axes. However, SLS is not able to fully define the crystallographic texture of those grains, because they grow epitaxially from existing grains that do not themselves necessarily have a well-defined crystallographic texture.
- Pre-crystallizing a thin film can improve the crystal alignment, e.g., texture, obtained during subsequent lateral crystallization processes, and can allow separate control and optimization of the texture and the microstructure of the film. Pre-crystallizing the film generates a textured film having crystal grains with predominantly the same crystallographic orientation in at least one direction. For example, if one crystallographic axis of most crystallites in a thin polycrystalline film points preferentially in a given direction, the film is referred to as having a one-axial texture. For many embodiments described herein, the preferential direction of the one-axial texture is a direction normal to the surface of the crystallites. Thus, “texture” refers to a one-axial surface texture of the grains as used herein. In some embodiments, the crystallites have a (100) texture. The degree of texture can vary depending on the particular application. For example, a high degree of texture can improve the performance of thin film transistor (TFT) being used for a driver circuit, but not provide as significant a benefit to a TFT that is used for a switch circuit.
- One method that can be used to pre-crystallize a film is known as mixed-phase zone-melt recrystallization (ZMR), which, in some embodiments, uses a continuous wave (CW) laser beam to partially melt a silicon film and thus produce a film having a desired texture, e.g., (100) texture. In ZMR, irradiation causes some parts of the film to completely melt while others remain unmelted, forming a “transition region” which exists as a result of a significant increase in reflectivity of Si upon melting (a semiconductor-metal transition). Crystal grains having (100) texture form in this transition region. For further details, see U.S. Patent Publication No. 2006/0102901, entitled “Systems and Methods for Creating Crystallographic-Orientation Controlled poly-Silicon Films,” the entire contents of which are incorporated herein by reference. The texture of a pre-crystallized film can be further improved by scanning the film multiple times, as preferably oriented grains get enlarged at the expense of less preferably oriented grains. For further details, see U.S. Provisional Patent Application No. 60/707,587, the entire contents of which are incorporated herein by reference. For further general details on ZMR, see M. W. Geis et al., “Zone-Melting recrystallization of Si films with a movable-strip-heater oven,” J. Electro-Chem. Soc. 129, 2812 (1982), the entire contents of which are incorporated herein by reference.
- However, pre-crystallizing an entire panel to get (100) large-grain material can be time consuming, as typical CW laser sources have limited power. Additionally, pre-crystallizing a silicon film with a CW laser can significantly heat the film and underlying substrate due to the continuous radiation. For glass substrates, sufficient heat can be generated to cause the substrate to warp or actually melt and damage the substrate. In general, a glass substrate benefits from a scan velocity of at least about 1 m/s in order to avoid damage. However, as substrate sizes increase, this velocity becomes increasingly difficult to achieve; for example, current panel sizes in so-called low-temperature polycrystalline silicon (LTPS) technology, commonly used for mobile (small-display) applications, are up to ˜720 mm×930 mm (which can be divided into 4 or more devices) or larger. Currently available stage technology typically limits scan velocities to a few cm/s or a few 10's of cm/s, as is used in normal SLS processes. Thus, conventional pre-crystallization using a CW laser is not readily applied to large substrates. Although heat-resistant substrates can be used, they are more costly and are less attractive for large-area electronic applications.
- The pre-crystallization systems and methods described herein allow the film to be scanned at high scan velocities, which helps to prevent heat damage to the underlying substrate. The systems can use conventional (e.g., relatively slow) handling stages to move large substrates, and at the same time can provide scan velocities of about 1 m/s, or even higher. Specifically, a handling stage moves the film and substrate at a typical scan velocity in one direction, while moving optics scan a laser beam across the film at a much higher velocity in a different, e.g., perpendicular, direction. The motions of the stage and laser beam are coordinated so that defined regions of the film are pre-crystallized, and other regions are left untreated. This increases the effective scanning velocity of the film above a threshold at which the substrate would be damaged, and greatly improves the efficiency of pre-crystallizing the film.
- The systems and methods also are capable of reducing the overall time to process the film. Specifically, the film is pre-crystallized in regions of the film where devices that benefit from controlled crystallographic texture, e.g., regions that contain the most demanding circuitry, will be fabricated. In some embodiments, these regions are on the periphery of a display, where the integration TFTs will be fabricated. Regions of the film where such devices will not be located, or devices not requiring controlled crystallographic texture, are not pre-crystallized. In some embodiments, the speed with which panels are pre-crystallized are approximately matched to the throughput rate of SLS systems and methods, with which the pre-crystallization systems and methods can be incorporated.
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FIG. 1 illustrates an embodiment of asilicon film 300 that is pre-crystallized in defined regions, and left untreated in other regions. The defined regions can be selected for a variety of reasons, such as that devices benefiting from improved crystalline texture will eventually be fabricated there. In some embodiments, the defined regions correspond to TFT channels. The film includes areas ofpre-crystallized silicon 325, and areas ofuntreated silicon 310. The areas are positioned and sized so that rows and columns of TFTs can optionally be subsequently fabricated within the areas ofpre-crystallized silicon 325, e.g., with SLS and other processing steps. Theuntreated regions 310 can be uncrystallized silicon, e.g., amorphous silicon, or can be, e.g., polycrystalline silicon. - Although the areas of untreated and pre-crystallized silicon are illustrated to have approximately the same width, the area widths and relative spacing can vary, depending on the desired area of the display and the width of the integration regions. For example, the integration regions can be only several mm wide for a display that can have a diagonal of several inches. In this case, the
pre-crystallized silicon columns 325 can be fabricated to be substantially narrower than theuntreated areas 310. This will further improve the efficiency with which the film can be processed, because large regions of the film will not need to be pre-crystallized. In general, the width of the pre-crystallized regions needs only to be long enough to cover the area for integration circuits. -
FIG. 2 illustratively displays amethod 400 for the high throughput pre-crystallization, and optional subsequent processing of a semiconductor film to form TFTs, according to certain embodiments. First, the regions to be pre-crystallized are defined (410). The defined regions optionally correspond to areas in which TFT circuits will be fabricated, as described above. The area widths and spacings are selected according to the requirements of the device that will eventually be fabricated using the film. - Then, the film is pre-crystallized in the defined regions (420). In some embodiments, this is done with a continuous wave (CW) laser as described in greater detail below. The laser partially melts the film, which crystallizes to have a desired texture. The textured film contains grains having predominantly the same crystallographic orientation in at least a single direction. However, the grains are randomly located on the film surface, and are of no particular size.
- Then, the film is optionally laterally crystallized (430). In many embodiments, this is done with SLS processes, for example as described in greater detail below. For further details and other SLS processes, see U.S. Pat. Nos. 6,322,625, 6,368,945, 6,555,449, and 6,573,531, the entire contents of which are incorporated herein by reference.
- Then, TFTs are optionally fabricated within the defined regions (440). This can be done with silicon island formation, in which the film is etched to remove excess silicon except where the TFTs are to be fabricated. Then, the remaining “islands” are processed using techniques known in the art to form active TFTs, including source and drain contact regions as illustrated in
FIG. 6A . - Note that in general, even if defined regions of a given film are pre-crystallized and the remaining regions left untreated, the SLS process need not be performed solely within the pre-crystallized regions. For example, the entire film, or portions thereof, can be laterally crystallized with SLS. Then, TFTs can be fabricated at desired locations within the laterally crystallized regions of the film, such that some or all of the TFTs are fabricated within the regions that were originally pre-crystallized. Determining which steps to perform on a given region of the film depends on the performance requirements of the finished device.
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FIG. 3 schematically illustrates an embodiment of a system that can be used for precrystallizing a thin film. The system includes a rotating disk with a plurality of facets, each of which is at least partially reflective for the laser beam wavelength. The laser beam is directed at the rotating disk, which is arranged such that the facets redirects the laser beam so that it irradiates the film. As the disk rotates, it causes the laser beam to scan the surface of the film, thus pre-crystallizing successive portions of the film. As the disk continues to rotate, each new facet that reflects the laser beam effectively “re-sets” the position of the beam relative to the film in the direction of rotation, bringing the laser beam back to its starting point on the film in that direction. At the same time, the film is translated in another direction, e.g., perpendicular to the scan direction, so that as the disk continues to rotate, new facets reflect the laser beam onto successive portions of the film that are displaced from each other in the second direction. Thus, an entire region of the thin film can be pre-crystallized. - As illustrated in
FIG. 3 ,pre-crystallization system 500 that can be used to pre-crystallize athin film 515 within definedregion 520. A laser (not shown), e.g., an 18 W, 2ω Nd:YV04 Verdi laser from Coherent Inc., generates aCW laser beam 540. One or more optics (also not shown)shape laser beam 540 so that it forms a thin line beam. In some embodiments, the beam has a length of between about 1-15 mm, a width of between about 5-50 μm, and a fluence of between about 10-150 W/mm of beam length. Note, however, that the beam may have any desired length, and in some cases may be a “line beam” having a very high length to width aspect ratio (e.g., about 50-105), and may even extend for the full length of the panel being irradiated. In this case, the film need not be scanned in the second direction, because the entire length of a given region will be irradiated at once. In some embodiments, the beam has approximately uniform energy along the long axis, although in other embodiments the beam will have other energy profiles such as Gaussian or sinusoidal. In some embodiments, the beam along the short axis has a “top hat” energy profile, i.e., having substantially equal energy across the short axis profile of the beam, and in other embodiments, the beam has a tightly focused Gaussian profile along the short axis. Other energy profiles, and other beam sizes, are possible and can be selected according to the performance requirements of the finished device. The overall beam power, as well as the size of the beam, is selected to provide a sufficient energy density to partially melt thefilm 515 so that it recrystallizes with the desired amount of texture. One of skill in the art would be able to readily select appropriate lasers and optics to achieve a desired beam profile, wavelength, and energy. Note that the laser beam need not be CW, but can also have any suitable temporal profile, for example sufficiently long pulses to partially melt the irradiated regions, or have a relatively high repetition rate (“quasi-CW”). - The laser beam is directed towards a
rotating disk 560 having a plurality of at least partially reflective surfaces orfacets 580.Reflective facets 580 ofdisk 560 are positioned relative to film 575 so as to directlaser beam 540 towards the film surface. Specificallyfacets 580 are arranged so as to redirectlaser beam 540 so that it irradiatesfilm 515 within definedregion 520. Where the laser beam irradiatesregion 520, it partially melts the film, which crystallizes upon cooling as described in greater detail in U.S. Patent Publication No. 2006/0102901.Disk 560 rotates aboutaxis 570. This rotation movesfacets 580 relative tolaser beam 540, so that they behave as a moving mirror for the laser beam, and guide the beam in a line across the substrate. The movement offacets 580move laser beam 540 rapidly relative tofilm 515 in the (−y) direction. The relative velocity vscan of the beam relative to thefilm 515 in the (−y) direction is determined by the speed of rotation ofdisk 560. The velocity of the beam imparted by the disk is substantially higher than could be generated by moving the substrate with typical mechanical stage. At the same time,stage 518 movesfilm 515 in the (+x) direction with a velocity vstage, perpendicular to the direction of beam motion. Thus, the total beam velocity relative to a given point of the film can be substantially higher than normally achievable usingstage 518 alone. Furthermore the irradiation pattern of the film surface is defined by the state scanning speed and direction as well as the facet size and rotation rate of the disk, as well as the distance between the disk and the film. - While
FIG. 3 showsfaceted disk 560 with eightfacets 580, this number of facets is meant to be illustrative only. In general, other ways of deflecting the beam in order to provide high velocity scanning are contemplated, for example, a single movable mirror. Or, for example, other numbers of facets can be used, according to the desired processing speed and size ofpre-crystallized regions 520. -
FIG. 4A illustrates a detailed view of the path oflaser beam 540 relative to thesubstrate 610. Asdisk 560 rotates, afirst facet 580 reflectsbeam 540 so that it first irradiatessubstrate 610 at afirst edge 621 of the definedfilm region 620 to be pre-crystallized, starting a “first scan” of the region.Disk 560 continues to rotate the givenfacet 580, so that the beam moves acrossfilm region 620 in the (−y) direction with a velocity vscan. At the same time,stage 518 movessubstrate 610 in the (+x) direction with a velocity vstage resulting in a diagonal crystallization path. Whereverbeam 540 irradiates definedfilm region 620, it partially melts the film, which upon cooling recrystallizes with texture as described above. Thus, as can be seen inFIG. 6A , the width wscan of a particular scanned region is defined by the length of the laser beam in that region, and the edge of the scanned region follows a “diagonal” path relative to the substrate, defined by vscan and vstage, as described in greater detail below. - As
disk 560 continues to rotate, thefirst facet 580 eventually rotates far enough that it no longer reflectsbeam 540. When this happens, the beam stops irradiating the definedregion 620 atsecond edge 622 which coincides with the other edge defining thepreselected region 620. With continued rotation ofdisk 560, thelaser beam 540 is directed onto asecond facet 580.Second facet 580 redirectslaser beam 540 so that it irradiatessubstrate 610 at afirst edge 621 of the definedfilm region 620, starting a “second scan” of the region. At the beginning of the second scan, the stage has moved thesubstrate 610 by a predetermined distance (based on stage velocity) in the (+x) direction relative to where it was at the beginning of the first scan. This yields an offset in the (+x) between the edge of the first scan and the edge of the second scan that is determined by stage speed vstage. This offset can be chosen to provide a desired amount of overlap between the first and second scans. As mentioned above, pre-crystallizing a film multiple times can enlarge the size of preferably oriented grains, so it may be desirable to use a relatively small offset to provide a large amount of overlap between the first and second scanned areas. - As
disk 560 continues to rotate,second facet 580 moves thebeam 540 acrossregion 620 in the (−y) direction, and stage 518 movessubstrate 610 in the (+x) direction. Eventually thesecond facet 580 moves out of the path ofbeam 540, and athird facet 580 reflects thebeam 540 to irradiateregion 620, again offset in the (+x) direction by an amount determined by speed vstage. In this way, asdisk 560 continues to rotate and stage 518 moves thesubstrate 610, definedfilm region 620 is substantially pre-crystallized, while other regions ofsubstrate 610 are not pre-crystallized and remain, e.g., amorphous silicon. After completing the pre-crystallization ofregion 620, the stage moves thesubstrate 610 in the (−x) and (+y) or (−y) direction, so that a new region can be pre-crystallized as described above. - Although
FIG. 4A shows a non-pre-crystallized area at the bottom of definedfilm region 620, resulting from the “diagonal” motion of the beam relative to the substrate, this area can be pre-crystallized by simply starting the first scan below the edge of the substrate. Alternately, the bottom of the substrate can be trimmed, or TFTs simply not fabricated on that particular area. - As illustrated in
FIG. 4B , the combination of beam velocity vscan in the (−y) direction and stage velocity vstage in the (+x) direction yields an effective scan velocity vscan,eff. This velocity vscan,eff. is elected so that the beam travels fast enough not to damage thesubstrate 610, but slow enough to partially melt the definedfilm region 620 to the desired degree. - Assuming that the
beam 540 moves in only one direction (although it can be bidirectional), and continuously irradiates the film, the frequency of scanning fscan is given by: -
- where vscan is the scan velocity, as described above, and lscan is the length of the region to be scanned, i.e., they-dimension of the pre-treated area. As an example, for a scan velocity vscan of 1 m/s and a scan length lscan of 4 mm, the scan frequency will be 250 Hz.
- For a certain number of scans per unit area n, the beam with wscan follows from:
-
- where vstage is the velocity of the stage. So, in addition to the exemplary numbers above, if n=10 scans per unit area are desired and the stage velocity vstage is approximately 20 cm/s, then the beam width wscan is approximately 8 mm.
- In order to remain within the margins of the partial melting regime, the scanning velocity is held to be substantially constant, as opposed to following, for example, a sinusoid trace. In the described embodiment,
disk 560 rotates at a substantially constant speed, which causesbeam 540 to also move at a substantially constant speed. Translation of the stage allows a new region to be pre-crystallized. - In some embodiments, the semiconductor film is first pre-crystallized in defined regions, and then laterally crystallized everywhere. The pre-crystallized regions will have more highly aligned crystals than the non-pre-crystallized regions, although all the regions of the film will be laterally crystallized. The regions that are both pre-crystallized and laterally crystallized can be used to fabricate devices that are particularly sensitive to microstructure, such as integration TFTs; the non-pre-crystallized regions can be used to fabricate devices that are less sensitive to microstructure, but still benefit from lateral crystals, such as pixel TFTs. Pre-crystallizing the film only in regions needing improved crystalline alignment can save time and energy over pre-crystallizing the entire semiconductor film.
- In some embodiments, the semiconductor film is laterally crystallized following pre-crystallization. One suitable protocol, referred to herein as “uniform-grain sequential lateral solidification,” or “uniform SLS,” may be used to prepare a uniform crystalline film characterized by repeating columns of laterally elongated crystals. Uniform crystal growth is described with reference to
FIGS. 7A-7D . The crystallization protocol involves advancing the film by an amount greater than the characteristic lateral growth length, e.g., δ>LGL, where δ is the translation distance between pulses, and less than two times the characteristic lateral growth length, e.g., δ<2 LGL. The term “characteristic lateral growth length” (LGL) refers to the characteristic distance the crystals grow when cooling. The LGL is a function of the film composition, film thickness, the substrate temperature, the laser pulse characteristics, the buffer layer material, if any, and the optical configuration. For example, a typical LGL for 50 nm thick silicon films is approximately 1-5 μm or about 2.5 μm. The actual growth may be limited by other laterally growing fronts, e.g., where two fronts collide as illustrated below. - Referring to
FIG. 7A , a first irradiation is carried out on a film with a narrow, e.g., less than two times the lateral growth length, and elongated, e.g., greater than 10 mm and up to or greater than 1000 mm, laser beam pulse having an energy density sufficient to completely melt the film. As a result, the film exposed to the laser beam (shown asregion 400 inFIG. 7A ), is melted completely and then crystallized. In this case, grains grow laterally from aninterface 420 between the unirradiated region and the melted region. As noted above, the grains grow epitaxially from the solidus boundaries on either side of the melted region. Thus, the laterally growing grains adopt the texture of the pre-crystallized film, formed as described above. By selecting the laser pulse width so that the molten zone width is less than about two times the characteristic LGL, the grains growing from both solid/melt interfaces collide with one another approximately at the center of the melted region, e.g., atcenterline 405, and the lateral growth stops. The two melt fronts collide approximately at thecenterline 405 before the temperature of the melt becomes sufficiently low to trigger nucleation. - Referring to
FIG. 7B , after being displaced by a predetermined distance o that is at least greater than about LGL and less than at most two LGL, a second region of thesubstrate 400′ is irradiated with a second laser beam pulse. The displacement of the substrate, δ, is related to the desired degree of overlap of the laser beam pulse. As the displacement of the substrate becomes longer, the degree of overlap becomes less. It is advantageous and preferable to have the overlap degree of the laser beam to be less than about 90% and more than about 10% of the LGL. The overlap region is illustrated bybrackets 430 and dashedline 435. Thefilm region 400′ exposed to the second laser beam irradiation melts completely and crystallizes. In this case, the grains grown by the first irradiation pulse serve as crystallizing seeds for the lateral growth of the grains grown from the second irradiation pulse.FIG. 7C illustrates aregion 440 having crystals that are laterally extended beyond a lateral growth length. Thus, a column of elongated crystals are formed by two laser beam irradiations on average. Because two irradiation pulses are all that is required to form the column of laterally extended crystals, the process is also referred to as a “two shot” process. Irradiation continues across the substrate to create multiple columns of laterally extended crystals.FIG. 7D illustrates the microstructure of the substrate after multiple irradiations and depictsseveral columns 440 of laterally extended crystals. - Thus, in uniform SLS, a film is irradiated and melted with a low number of pulses, e.g., two. The crystals that form within the melted regions preferably grow laterally and with a similar orientation, and meet each other at a boundary within the particular irradiated region of film. The width of the irradiation pattern is preferably selected so that the crystals grow without nucleation. In such instances, the grains are not significantly elongated; however, they are of uniform size and orientation. For further details on variations of uniform SLS processes, see U.S. Pat. No. 6,573,531, the contents of which are incorporated herein in their entirety by reference, and PCT Publication No. WO 20061107926, entitled “Line Scan Sequential Lateral Solidification of Thin Films,” the entire contents of which are incorporated herein by reference. Other lateral crystallization methods that provide relatively short elongations of crystal grains are also suitable, for example so-called “Dot-SLS” methods as described in U.S. Patent Publication number 2006/0102901, as well as controlled super-lateral growth, or “C-SLG” methods, as described in PCT Publication No. WO US03/25947, the entire contents of which are incorporated herein by reference.
-
FIG. 5 illustrates an SLS system according to some embodiments. A light source, for example, anexcimer laser 710 generates a laser beam which then passes through apulse duration extender 720 andattenuator plates 725 prior to passing through optical elements such asmirrors telescope 735,homogenizer 745,beam splitter 755, andlens 765. The laser beam pulses are then passed through amask 770, which may be on a translation stage (not shown), andprojection optics 795. The mask can be a slit, which shapes the laser beam into a “line beam,” although the system is capable of making more complex beam shapes depending on the choice of mask. The projection optics reduce the size of the laser beam and simultaneously increase the intensity of the opticalenergy striking substrate 799 at a desired location. Thesubstrate 799 is provided on a precisionx-y-z stage 800 that can accurately position thesubstrate 799 under the beam and assist in focusing or defocusing the image of themask 770 produced by the laser beam at the desired location on the substrate. As described in U.S. Patent Publication No. 2006/0102901, the firing of the laser can be coordinated with the motion ofx-y-z stage 800 to provide location-controlled firing of pulses. - Although the discussion above refers to the processing of silicon thin films, many other kinds of thin films are compatible. The thin film can be a semiconductor or a conductor, such as a metal. Exemplary metals include aluminum, copper, nickel, titanium, gold, and molybdenum. Exemplary semiconductor films include conventional semiconductor materials, such as silicon, germanium, and silicon-germanium. Additional layers situated beneath or above the metal or semiconductor film are contemplated, for example, silicon oxide, silicon nitride and/or mixtures of oxide, nitride, or other materials that are suitable, for example, for use as a thermal insulator to further protect the substrate from overheating or as a diffusion barrier to prevent diffusion or impurities from the substrate to the film. See, e.g., PCT Publication No. WO 2003/084688, for methods and systems for providing an aluminum thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization.
- In view of the wide variety of embodiments to which the principles of the present invention can be applied, it should be understood that the illustrated embodiments are illustrative only, and should not be taken as limiting the scope of the present invention.
Claims (53)
1. A method of processing a film, the method comprising:
(a) defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting;
(b) generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region;
(c) positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a first region of said plurality of spaced-apart regions;
(d) directing the laser beam onto a moving at least partially reflective optical element in the path of the laser beam, the moving optical element redirecting the beam so as to scan a first portion of the first region with the beam in a first direction at a first velocity, wherein the first velocity is selected such that the beam irradiates and forms the mixture of solid and liquid in the first portion of the first region, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction; and
(e) crystallizing at least the first portion of the first region using laser-induced melting.
2. The method of claim 1 , wherein the laser beam is continuous-wave.
3. The method of claim 1 , further comprising re-positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a second region of the plurality of spaced-apart regions; and moving the optical element so as to scan a first portion of the second region with the laser beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
4. The method of claim 1 , wherein said first velocity is further selected such that heat generated by the beam substantially does not damage the substrate.
5. The method of claim 1 , wherein the moving optical element comprises a rotating disk that comprising a plurality of facets that reflect said laser beam onto the film.
6. The method of claim 1 , wherein the first velocity is at least about 0.5 m/s.
7. The method of claim 1 , wherein the first velocity is at least about 1 m/s.
8. The method of claim 1 , further comprising, after redirecting the beam with the moving optical element so as to scan the first portion of the first region, translating the film relative to the laser beam in a second direction so as to scan a second portion of the first region with the laser beam in the first direction at the first velocity, wherein the second portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
9. The method of claim 8 , wherein the second portion of the first region partially overlaps the first portion of the first region.
10. The method of claim 9 , comprising continuously translating the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region.
11. The method of claim 8 , comprising continuously translating the film in the second direction with a second velocity for a period of time selected to sequentially irradiate and a plurality of portions of the first region, wherein each of said plurality of portions upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
12. The method of claim 1 , wherein said crystallographic orientation in said at least a single direction is substantially normal to the surface of the film.
13. The method of claim 1 , wherein said crystallographic orientation in said at least a single direction is a <100> orientation.
14. The method of claim 1 , wherein crystallizing at least the first portion of the first region comprises performing uniform sequential lateral crystallization.
15. The method of claim 14 , wherein the uniform sequential lateral crystallization comprises line-scan sequential lateral crystallization.
16. The method of claim 1 , wherein crystallizing at least the first portion of the first region comprises performing Dot sequential lateral crystallization.
17. The method of claim 1 , wherein crystallizing at least the first portion of the first region comprises performing controlled super-lateral growth crystallization.
18. The method of claim 1 , wherein crystallizing at least the first portion of the first region comprises forming crystals having a pre-determined crystallographic orientation suitable for a channel region of a driver TFT.
19. The method of claim 1 , further comprising fabricating at least one thin film transistor in at least one of the first and second regions.
20. The method of claim 1 , further comprising fabricating a plurality of thin film transistors in at least the first and second regions.
21. The method of claim 1 , wherein defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a device or circuit intended to be later fabricated in that region.
22. The method of claim 1 , wherein defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region.
23. The method of claim 1 , wherein the spaced-apart regions are separated by amorphous film.
24. The method of claim 1 , wherein the film comprises at least one of a conductor and a semiconductor.
25. The method of claim 1 , wherein the film comprises silicon.
26. The method of claim 1 , wherein the substrate comprises glass.
27. The method of claim 1 , comprising shaping said laser beam using focusing optics.
28. A method of processing a film, the method comprising:
(a) defining at least one region within the film, the film being disposed on a substrate and capable of laser-induced melting;
(b) generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region;
(c) directing the laser beam onto a moving optical element that is at least partially reflective, said moving optical element directing the laser beam across a first portion of the first region in a first direction at a first velocity;
(d) moving the film relative to the laser beam in a second direction and at a second velocity to displace the film along the second direction during laser irradiation of the first portion in step (c), wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction, wherein the first velocity is selected such that the beam irradiates and forms a mixture of solid and liquid in the first portion of the film; and
(e) repeating steps (c) and (d) at least once to crystallize the first region.
29. The method of claim 28 , wherein the laser beam is continuous-wave.
30. The method of claim 28 , further comprising re-positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a second region of the plurality of spaced-apart regions; and moving the optical element so as to scan a first portion of the second region with the laser beam in the first direction at the first velocity, wherein the first portion of the second region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
31. The method of claim 28 , wherein said first velocity is further selected to avoid heat generation by the beam that damages the substrate.
32. The method of claim 28 , wherein directing the moving optical element comprises rotating a disk that comprises a plurality of facets that reflect said laser beam onto the film.
33. The method of claim 28 , wherein the first velocity is at least about 0.5 m/s.
34. The method of claim 28 , wherein the first velocity is at least about 1 m/s.
35. The method of claim 28 , wherein steps (c) and (d) provide first and second portions of the first region having predominantly the same crystallographic orientation and the second portion of the first region partially overlaps the first portion of the first region.
36. The method of claim 35 , comprising continuously translating the film in the second direction with a second velocity selected to provide a pre-determined amount of overlap between the first and second portions of the first region.
37. The method of claim 35 , comprising continuously translating the film in the second direction with a second velocity for a period of time selected to sequentially irradiate and partially melt a plurality of portions of the first region, wherein each of said plurality of portions upon cooling forms crystalline grains having predominantly the same crystallographic orientation in said at least a single direction.
38. The method of claim 28 , wherein said crystallographic orientation in said at least a single direction is substantially normal to the surface of the film.
39. The method of claim 28 , wherein said crystallographic orientation in said at least a single direction is a <100> orientation.
40. The method of claim 28 , further comprising subjecting the film to a subsequent sequential lateral crystallization process to generate location controlled grains having wherein crystallizing at least the first portion of the first region comprises performing uniform sequential lateral crystallization.
41. The method of claim 40 , wherein the uniform sequential lateral crystallization comprises line-scan sequential lateral crystallization.
42. The method of claim 28 , wherein crystallizing at least the first portion of the first region comprises performing Dot sequential lateral crystallization.
43. The method of claim 28 , wherein crystallizing at least the first portion of the first region comprises performing controlled super-lateral growth crystallization.
44. The method of claim 28 , wherein crystallizing at least the first portion of the first region comprises forming crystals having a pre-determined crystallographic orientation suitable for a channel region of a driver TFT.
45. The method of claim 28 , further comprising fabricating at least one thin film transistor in at least one of the first and second regions.
46. The method of claim 28 , further comprising fabricating a plurality of thin film transistors in at least the first and second regions.
47. The method of claim 28 , wherein defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a device or circuit intended to be later fabricated in that region.
48. The method of claim 28 , wherein defining the plurality of spaced-apart regions comprises defining a width for each spaced-apart region that is at least as large as a width of a thin film transistor intended to be later fabricated in that region.
49. The method of claim 28 , wherein the spaced-apart regions are separated by amorphous film.
50. The method of claim 28 , wherein the film comprises at least one of a conductor and a semiconductor.
51. The method of claim 28 , wherein the film comprises silicon.
52. The method of claim 28 , wherein the substrate comprises glass.
53. The method of claim 28 , comprising shaping said laser beam using focusing optics.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110309370A1 (en) * | 2008-11-14 | 2011-12-22 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
WO2017210182A1 (en) * | 2016-05-30 | 2017-12-07 | The Trustees Of Columbia University In The City Of New York | Scape microscopy with phase modulating element and image reconstruction |
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Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
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US7718517B2 (en) * | 2002-08-19 | 2010-05-18 | Im James S | Single-shot semiconductor processing system and method having various irradiation patterns |
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KR20220091041A (en) | 2020-12-23 | 2022-06-30 | 주수복 | Headset sterilization device |
WO2023276182A1 (en) * | 2021-06-28 | 2023-01-05 | Jswアクティナシステム株式会社 | Heat treatment method, heat treatment device, and method for manufacturing semiconductor device |
WO2023199485A1 (en) * | 2022-04-14 | 2023-10-19 | Jswアクティナシステム株式会社 | Conveyance device, transfer method, conveyance method, and method for manufacturing semiconductor device |
Citations (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4940505A (en) * | 1988-12-02 | 1990-07-10 | Eaton Corporation | Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation |
US5529951A (en) * | 1993-11-02 | 1996-06-25 | Sony Corporation | Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation |
US5571430A (en) * | 1993-12-28 | 1996-11-05 | Toyota Jidosha Kabushiki Kaisha | Method and system for processing workpiece with laser seam, with oscillation of beam spot on the workpeiece and beam oscillating apparatus |
US5742426A (en) * | 1995-05-25 | 1998-04-21 | York; Kenneth K. | Laser beam treatment pattern smoothing device and laser beam treatment pattern modulator |
US5756364A (en) * | 1994-11-29 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method of semiconductor device using a catalyst |
US5767003A (en) * | 1995-09-19 | 1998-06-16 | Sony Corporation | Thin film semiconductor device manufacturing method |
US5766989A (en) * | 1994-12-27 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Method for forming polycrystalline thin film and method for fabricating thin-film transistor |
US5846625A (en) * | 1994-08-26 | 1998-12-08 | Hitachi, Ltd. | Optical recording medium and information processing apparatus used therefor |
US6045980A (en) * | 1995-09-29 | 2000-04-04 | Leybold Systems Gmbh | Optical digital media recording and reproduction system |
US6117752A (en) * | 1997-08-12 | 2000-09-12 | Kabushiki Kaisha Toshiba | Method of manufacturing polycrystalline semiconductor thin film |
US6455359B1 (en) * | 1997-02-13 | 2002-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser-irradiation method and laser-irradiation device |
US6482722B2 (en) * | 1999-04-19 | 2002-11-19 | Sony Corporation | Process of crystallizing semiconductor thin film and laser irradiation system |
US6516009B1 (en) * | 1997-02-28 | 2003-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiating device and laser irradiating method |
US20030104682A1 (en) * | 2000-08-25 | 2003-06-05 | Fujitsu Limited | Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus |
US6577380B1 (en) * | 2000-07-21 | 2003-06-10 | Anvik Corporation | High-throughput materials processing system |
US6635932B2 (en) * | 2000-08-10 | 2003-10-21 | The Regents Of The University Of California | Thin film crystal growth by laser annealing |
US20050037552A1 (en) * | 2003-04-21 | 2005-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam irradiation apparatus, beam irradiation method, and method for manufacturing semiconductor device |
US20050145845A1 (en) * | 2002-09-25 | 2005-07-07 | Advanced Lcd Technologies Dev. Ctr. Co., Ltd | Semiconductor device, annealing method, annealing apparatus and display apparatus |
US20050169330A1 (en) * | 2004-01-30 | 2005-08-04 | Mikio Hongo | Laser annealing apparatus and annealing method of semiconductor thin film |
US20050233491A1 (en) * | 2004-03-31 | 2005-10-20 | Konica Minolta Holdings, Inc. | Thin-film transistor sheet and manufacturing method thereof |
US20050255640A1 (en) * | 1996-05-28 | 2005-11-17 | Im James S | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification |
US20060102901A1 (en) * | 2004-11-18 | 2006-05-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-Silicon films |
US20070148834A1 (en) * | 2004-06-18 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
US20070145017A1 (en) * | 2000-03-21 | 2007-06-28 | The Trustees Of Columbia University | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
US20070238270A1 (en) * | 2006-04-06 | 2007-10-11 | Boe Hydis Technology Co., Ltd. | Method for forming polycrystalline film |
US20080176414A1 (en) * | 2003-09-16 | 2008-07-24 | Columbia University | Systems and methods for inducing crystallization of thin films using multiple optical paths |
US20090137105A1 (en) * | 2007-11-21 | 2009-05-28 | Trustees Of Columbia University | Systems and methods for preparing epitaxially textured polycrystalline films |
US20110108108A1 (en) * | 2008-02-29 | 2011-05-12 | The Trustees Of Columbia University In The City Of | Flash light annealing for thin films |
US20120045191A1 (en) * | 2007-11-21 | 2012-02-23 | Columbia University | Systems and methods for preparing epitaxially textured polycrystalline films |
Family Cites Families (239)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2030468A5 (en) | 1969-01-29 | 1970-11-13 | Thomson Brandt Csf | |
US4234358A (en) | 1979-04-05 | 1980-11-18 | Western Electric Company, Inc. | Patterned epitaxial regrowth using overlapping pulsed irradiation |
US4309225A (en) | 1979-09-13 | 1982-01-05 | Massachusetts Institute Of Technology | Method of crystallizing amorphous material with a moving energy beam |
US4727047A (en) | 1980-04-10 | 1988-02-23 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material |
US4382658A (en) | 1980-11-24 | 1983-05-10 | Hughes Aircraft Company | Use of polysilicon for smoothing of liquid crystal MOS displays |
US4456371A (en) | 1982-06-30 | 1984-06-26 | International Business Machines Corporation | Optical projection printing threshold leveling arrangement |
US4691983A (en) | 1983-10-14 | 1987-09-08 | Hitachi, Ltd. | Optical waveguide and method for making the same |
US4639277A (en) | 1984-07-02 | 1987-01-27 | Eastman Kodak Company | Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material |
JPH084067B2 (en) | 1985-10-07 | 1996-01-17 | 工業技術院長 | Method for manufacturing semiconductor device |
JPH0732124B2 (en) | 1986-01-24 | 1995-04-10 | シャープ株式会社 | Method for manufacturing semiconductor device |
US4793694A (en) | 1986-04-23 | 1988-12-27 | Quantronix Corporation | Method and apparatus for laser beam homogenization |
JPS62293740A (en) | 1986-06-13 | 1987-12-21 | Fujitsu Ltd | Manufacture of semiconductor device |
US4758533A (en) | 1987-09-22 | 1988-07-19 | Xmr Inc. | Laser planarization of nonrefractory metal during integrated circuit fabrication |
USRE33836E (en) | 1987-10-22 | 1992-03-03 | Mrs Technology, Inc. | Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems |
US5204659A (en) | 1987-11-13 | 1993-04-20 | Honeywell Inc. | Apparatus and method for providing a gray scale in liquid crystal flat panel displays |
JPH01256114A (en) | 1988-04-06 | 1989-10-12 | Hitachi Ltd | Laser annealing method |
JP2569711B2 (en) * | 1988-04-07 | 1997-01-08 | 株式会社ニコン | Exposure control device and exposure method using the same |
US5523193A (en) | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
JP2706469B2 (en) | 1988-06-01 | 1998-01-28 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
US5076667A (en) | 1990-01-29 | 1991-12-31 | David Sarnoff Research Center, Inc. | High speed signal and power supply bussing for liquid crystal displays |
JP2802449B2 (en) | 1990-02-16 | 1998-09-24 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
US5247375A (en) | 1990-03-09 | 1993-09-21 | Hitachi, Ltd. | Display device, manufacturing method thereof and display panel |
DE4103504A1 (en) * | 1990-04-20 | 1991-10-24 | Bergwerksverband Gmbh | REACTOR CHAMBER DOOR FOR LARGE-SCALE COOKING REACTOR |
US5233207A (en) | 1990-06-25 | 1993-08-03 | Nippon Steel Corporation | MOS semiconductor device formed on insulator |
JP2973492B2 (en) | 1990-08-22 | 1999-11-08 | ソニー株式会社 | Crystallization method of semiconductor thin film |
US5032233A (en) | 1990-09-05 | 1991-07-16 | Micron Technology, Inc. | Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti-reflective coating during laser planarization |
KR920010885A (en) | 1990-11-30 | 1992-06-27 | 카나이 쯔또무 | Thin film semiconductor, manufacturing method and manufacturing apparatus and image processing apparatus |
US5173441A (en) | 1991-02-08 | 1992-12-22 | Micron Technology, Inc. | Laser ablation deposition process for semiconductor manufacture |
CA2061796C (en) | 1991-03-28 | 2002-12-24 | Kalluri R. Sarma | High mobility integrated drivers for active matrix displays |
JP3213338B2 (en) | 1991-05-15 | 2001-10-02 | 株式会社リコー | Manufacturing method of thin film semiconductor device |
US5373803A (en) | 1991-10-04 | 1994-12-20 | Sony Corporation | Method of epitaxial growth of semiconductor |
US5485019A (en) | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US5424244A (en) | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
JP2572003B2 (en) | 1992-03-30 | 1997-01-16 | 三星電子株式会社 | Method of manufacturing thin film transistor having three-dimensional multi-channel structure |
US5285236A (en) | 1992-09-30 | 1994-02-08 | Kanti Jain | Large-area, high-throughput, high-resolution projection imaging system |
US5291240A (en) | 1992-10-27 | 1994-03-01 | Anvik Corporation | Nonlinearity-compensated large-area patterning system |
JPH06177034A (en) | 1992-12-03 | 1994-06-24 | Sony Corp | Semiconductor single crystal growth method |
JP3587537B2 (en) | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US5444302A (en) | 1992-12-25 | 1995-08-22 | Hitachi, Ltd. | Semiconductor device including multi-layer conductive thin film of polycrystalline material |
JP3599355B2 (en) | 1993-03-04 | 2004-12-08 | セイコーエプソン株式会社 | Method for manufacturing active matrix substrate and method for manufacturing liquid crystal display |
JPH076960A (en) | 1993-06-16 | 1995-01-10 | Fuji Electric Co Ltd | Forming method of polycrystalline semiconductor thin film |
US5453594A (en) | 1993-10-06 | 1995-09-26 | Electro Scientific Industries, Inc. | Radiation beam position and emission coordination system |
US5395481A (en) | 1993-10-18 | 1995-03-07 | Regents Of The University Of California | Method for forming silicon on a glass substrate |
JP2646977B2 (en) | 1993-11-29 | 1997-08-27 | 日本電気株式会社 | Method for manufacturing forward staggered thin film transistor |
US5496768A (en) | 1993-12-03 | 1996-03-05 | Casio Computer Co., Ltd. | Method of manufacturing polycrystalline silicon thin film |
US6130009A (en) | 1994-01-03 | 2000-10-10 | Litel Instruments | Apparatus and process for nozzle production utilizing computer generated holograms |
JPH07249591A (en) | 1994-03-14 | 1995-09-26 | Matsushita Electric Ind Co Ltd | Laser annealing method for semiconductor thin film and thin-film semiconductor element |
US5456763A (en) | 1994-03-29 | 1995-10-10 | The Regents Of The University Of California | Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon |
JP3072005B2 (en) | 1994-08-25 | 2000-07-31 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
US5844588A (en) | 1995-01-11 | 1998-12-01 | Texas Instruments Incorporated | DMD modulated continuous wave light source for xerographic printer |
JPH08236443A (en) | 1995-02-28 | 1996-09-13 | Fuji Xerox Co Ltd | Semiconductor crystal growing method and semiconductor manufacturing device |
DE69637994D1 (en) | 1995-04-26 | 2009-09-24 | Minnesota Mining & Mfg | ABLATION PROCEDURE BY LASER PRESENTATION |
TW297138B (en) | 1995-05-31 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
US6524977B1 (en) | 1995-07-25 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus |
US5721606A (en) | 1995-09-07 | 1998-02-24 | Jain; Kanti | Large-area, high-throughput, high-resolution, scan-and-repeat, projection patterning system employing sub-full mask |
US6444506B1 (en) | 1995-10-25 | 2002-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation |
US5817548A (en) | 1995-11-10 | 1998-10-06 | Sony Corporation | Method for fabricating thin film transistor device |
KR100514417B1 (en) | 1995-12-26 | 2005-12-20 | 세이코 엡슨 가부시키가이샤 | Active Matrix Substrate, Active Matrix Substrate Manufacturing Method, Liquid Crystal Display and Electronic Devices |
US5858807A (en) | 1996-01-17 | 1999-01-12 | Kabushiki Kaisha Toshiba | Method of manufacturing liquid crystal display device |
JP3240258B2 (en) | 1996-03-21 | 2001-12-17 | シャープ株式会社 | Semiconductor device, thin film transistor and method for manufacturing the same, and liquid crystal display device and method for manufacturing the same |
JPH09270393A (en) | 1996-03-29 | 1997-10-14 | Sanyo Electric Co Ltd | Laser light irradiation device |
DE19707834A1 (en) | 1996-04-09 | 1997-10-16 | Zeiss Carl Fa | Material irradiation unit used e.g. in production of circuit boards |
US5997642A (en) | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
CA2256699C (en) | 1996-05-28 | 2003-02-25 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
JPH09321310A (en) | 1996-05-31 | 1997-12-12 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
JP3306300B2 (en) | 1996-06-20 | 2002-07-24 | 三洋電機株式会社 | Laser annealing method for semiconductor film |
JP3917698B2 (en) | 1996-12-12 | 2007-05-23 | 株式会社半導体エネルギー研究所 | Laser annealing method and laser annealing apparatus |
US5861991A (en) | 1996-12-19 | 1999-01-19 | Xerox Corporation | Laser beam conditioner using partially reflective mirrors |
US6020244A (en) | 1996-12-30 | 2000-02-01 | Intel Corporation | Channel dopant implantation with automatic compensation for variations in critical dimension |
US5986807A (en) | 1997-01-13 | 1999-11-16 | Xerox Corporation | Single binary optical element beam homogenizer |
JPH10244390A (en) | 1997-03-04 | 1998-09-14 | Toshiba Corp | Laser machining method and its device |
JP4086932B2 (en) | 1997-04-17 | 2008-05-14 | 株式会社半導体エネルギー研究所 | Laser irradiation apparatus and laser processing method |
US5948291A (en) | 1997-04-29 | 1999-09-07 | General Scanning, Inc. | Laser beam distributor and computer program for controlling the same |
US6060327A (en) | 1997-05-14 | 2000-05-09 | Keensense, Inc. | Molecular wire injection sensors |
JP3503427B2 (en) | 1997-06-19 | 2004-03-08 | ソニー株式会社 | Method for manufacturing thin film transistor |
US6014944A (en) | 1997-09-19 | 2000-01-18 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for improving crystalline thin films with a contoured beam pulsed laser |
JP3943245B2 (en) | 1997-09-20 | 2007-07-11 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP3462053B2 (en) | 1997-09-30 | 2003-11-05 | 株式会社半導体エネルギー研究所 | Beam homogenizer, laser irradiation apparatus, laser irradiation method, and semiconductor device |
EP1049144A4 (en) | 1997-12-17 | 2006-12-06 | Matsushita Electronics Corp | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
JPH11186189A (en) | 1997-12-17 | 1999-07-09 | Semiconductor Energy Lab Co Ltd | Laser irradiation equipment |
TW466772B (en) | 1997-12-26 | 2001-12-01 | Seiko Epson Corp | Method for producing silicon oxide film, method for making semiconductor device, semiconductor device, display, and infrared irradiating device |
KR100284708B1 (en) | 1998-01-24 | 2001-04-02 | 구본준, 론 위라하디락사 | How to crystallize silicon thin film |
JP3807576B2 (en) | 1998-01-28 | 2006-08-09 | シャープ株式会社 | Polymerizable compound, polymerizable resin material composition, polymerized cured product, and liquid crystal display device |
US6504175B1 (en) | 1998-04-28 | 2003-01-07 | Xerox Corporation | Hybrid polycrystalline and amorphous silicon structures on a shared substrate |
JP2000066133A (en) | 1998-06-08 | 2000-03-03 | Sanyo Electric Co Ltd | Laser light irradiation device |
KR100296110B1 (en) | 1998-06-09 | 2001-08-07 | 구본준, 론 위라하디락사 | Method of manufacturing thin film transistor |
KR100292048B1 (en) | 1998-06-09 | 2001-07-12 | 구본준, 론 위라하디락사 | Manufacturing Method of Thin Film Transistor Liquid Crystal Display |
KR100296109B1 (en) | 1998-06-09 | 2001-10-26 | 구본준, 론 위라하디락사 | Thin Film Transistor Manufacturing Method |
US6326286B1 (en) | 1998-06-09 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method for crystallizing amorphous silicon layer |
JP2000010058A (en) | 1998-06-18 | 2000-01-14 | Hamamatsu Photonics Kk | Spatial light modulating device |
US6479837B1 (en) | 1998-07-06 | 2002-11-12 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor and liquid crystal display unit |
US6555422B1 (en) | 1998-07-07 | 2003-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method of manufacturing the same |
US6072631A (en) | 1998-07-09 | 2000-06-06 | 3M Innovative Properties Company | Diffractive homogenizer with compensation for spatial coherence |
US6246524B1 (en) | 1998-07-13 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
US6346437B1 (en) | 1998-07-16 | 2002-02-12 | Sharp Laboratories Of America, Inc. | Single crystal TFT from continuous transition metal delivery method |
JP3156776B2 (en) | 1998-08-03 | 2001-04-16 | 日本電気株式会社 | Laser irradiation method |
DE19839718A1 (en) | 1998-09-01 | 2000-03-02 | Strunk Horst P | Laser crystallization or crystal structure alteration of amorphous or polycrystalline semiconductor layers comprises paired laser pulse irradiation for extended melt time while maintaining a low substrate temperature |
GB9819338D0 (en) | 1998-09-04 | 1998-10-28 | Philips Electronics Nv | Laser crystallisation of thin films |
EP1744349A3 (en) | 1998-10-05 | 2007-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device |
US6326186B1 (en) | 1998-10-15 | 2001-12-04 | Novozymes A/S | Method for reducing amino acid biosynthesis inhibiting effects of a sulfonyl-urea based compound |
US6081381A (en) | 1998-10-26 | 2000-06-27 | Polametrics, Inc. | Apparatus and method for reducing spatial coherence and for improving uniformity of a light beam emitted from a coherent light source |
US6313435B1 (en) | 1998-11-20 | 2001-11-06 | 3M Innovative Properties Company | Mask orbiting for laser ablated feature formation |
US6120976A (en) | 1998-11-20 | 2000-09-19 | 3M Innovative Properties Company | Laser ablated feature formation method |
KR100290787B1 (en) | 1998-12-26 | 2001-07-12 | 박종섭 | Manufacturing Method of Semiconductor Memory Device |
TW457553B (en) | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
JP2000208771A (en) | 1999-01-11 | 2000-07-28 | Hitachi Ltd | Semiconductor device, liquid cystal display device, and their manufacturing |
US6203952B1 (en) | 1999-01-14 | 2001-03-20 | 3M Innovative Properties Company | Imaged article on polymeric substrate |
US6162711A (en) | 1999-01-15 | 2000-12-19 | Lucent Technologies, Inc. | In-situ boron doped polysilicon with dual layer and dual grain structure for use in integrated circuits manufacturing |
TW444247B (en) | 1999-01-29 | 2001-07-01 | Toshiba Corp | Laser beam irradiating device, manufacture of non-single crystal semiconductor film, and manufacture of liquid crystal display device |
JP3161450B2 (en) | 1999-02-02 | 2001-04-25 | 日本電気株式会社 | Substrate processing apparatus, gas supply method, and laser light supply method |
US6535535B1 (en) | 1999-02-12 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and semiconductor device |
EP1033731B1 (en) | 1999-03-01 | 2006-07-05 | Fuji Photo Film Co., Ltd. | Photo-electrochemical cell containing an electrolyte comprising a liquid crystal compound |
US6393042B1 (en) | 1999-03-08 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus |
US6493042B1 (en) | 1999-03-18 | 2002-12-10 | Xerox Corporation | Feature based hierarchical video segmentation |
JP2000315652A (en) | 1999-04-30 | 2000-11-14 | Sony Corp | Method for crystalizing semiconductor thin film and laser irradiation device |
JP2000346618A (en) | 1999-06-08 | 2000-12-15 | Sumitomo Heavy Ind Ltd | Method and apparatus for precise alignment for rectangular beam |
JP3562389B2 (en) | 1999-06-25 | 2004-09-08 | 三菱電機株式会社 | Laser heat treatment equipment |
KR100327087B1 (en) | 1999-06-28 | 2002-03-13 | 구본준, 론 위라하디락사 | Laser annealing method |
JP2001023918A (en) | 1999-07-08 | 2001-01-26 | Nec Corp | Semiconductor thin-film forming apparatus |
JP4322359B2 (en) | 1999-07-08 | 2009-08-26 | 住友重機械工業株式会社 | Laser processing equipment |
JP2001023899A (en) | 1999-07-13 | 2001-01-26 | Hitachi Ltd | Semiconductor thin film, liquid crystal display device provided with the same, and manufacture of the film |
JP3422290B2 (en) | 1999-07-22 | 2003-06-30 | 日本電気株式会社 | Manufacturing method of semiconductor thin film |
US6190985B1 (en) | 1999-08-17 | 2001-02-20 | Advanced Micro Devices, Inc. | Practical way to remove heat from SOI devices |
US6599788B1 (en) | 1999-08-18 | 2003-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
TW457732B (en) | 1999-08-27 | 2001-10-01 | Lumileds Lighting Bv | Luminaire, optical element and method of illuminating an object |
US6573531B1 (en) | 1999-09-03 | 2003-06-03 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
JP2001144170A (en) | 1999-11-11 | 2001-05-25 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
US6368945B1 (en) | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
US6531681B1 (en) | 2000-03-27 | 2003-03-11 | Ultratech Stepper, Inc. | Apparatus having line source of radiant energy for exposing a substrate |
US6274488B1 (en) | 2000-04-12 | 2001-08-14 | Ultratech Stepper, Inc. | Method of forming a silicide region in a Si substrate and a device having same |
GB0009280D0 (en) | 2000-04-15 | 2000-05-31 | Koninkl Philips Electronics Nv | Method of cystallising a semiconductor film |
JP4588167B2 (en) | 2000-05-12 | 2010-11-24 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US6521492B2 (en) | 2000-06-12 | 2003-02-18 | Seiko Epson Corporation | Thin-film semiconductor device fabrication method |
TW452892B (en) | 2000-08-09 | 2001-09-01 | Lin Jing Wei | Re-crystallization method of polysilicon thin film of thin film transistor |
TW535194B (en) * | 2000-08-25 | 2003-06-01 | Fujitsu Ltd | Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus |
DE10042733A1 (en) | 2000-08-31 | 2002-03-28 | Inst Physikalische Hochtech Ev | Multicrystalline laser-crystallized silicon thin-film solar cell on a transparent substrate |
US20020151115A1 (en) | 2000-09-05 | 2002-10-17 | Sony Corporation | Process for production of thin film, semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film |
US6445359B1 (en) | 2000-09-29 | 2002-09-03 | Hughes Electronics Corporation | Low noise block down converter adapter with built-in multi-switch for a satellite dish antenna |
WO2002031871A1 (en) | 2000-10-06 | 2002-04-18 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof |
JP4599032B2 (en) | 2000-10-10 | 2010-12-15 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Method and apparatus for processing thin metal layers |
US6582827B1 (en) | 2000-11-27 | 2003-06-24 | The Trustees Of Columbia University In The City Of New York | Specialized substrates for use in sequential lateral solidification processing |
AU2002235144A1 (en) * | 2000-11-27 | 2002-06-03 | The Trustees Of Columbia University In The City Of New York | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate |
US7217605B2 (en) | 2000-11-29 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |
TWI313059B (en) | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
CN1423841A (en) | 2000-12-21 | 2003-06-11 | 皇家菲利浦电子有限公司 | Thin film transistors |
KR100400510B1 (en) | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | A machine for Si crystallization and method of crystallizing Si |
US6621044B2 (en) | 2001-01-18 | 2003-09-16 | Anvik Corporation | Dual-beam materials-processing system |
JP4732599B2 (en) | 2001-01-26 | 2011-07-27 | 株式会社日立製作所 | Thin film transistor device |
JP2002222944A (en) | 2001-01-26 | 2002-08-09 | Kitakiyuushiyuu Techno Center:Kk | Semiconductor element |
DE10103670A1 (en) | 2001-01-27 | 2002-08-01 | Christiansen Jens I | Textured crystalline silicon layer production using laser, includes control of energy intensity to achieve textured crystallites of specific diameter |
US6573163B2 (en) | 2001-01-29 | 2003-06-03 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films |
JP4744700B2 (en) | 2001-01-29 | 2011-08-10 | 株式会社日立製作所 | Thin film semiconductor device and image display device including thin film semiconductor device |
US6495405B2 (en) | 2001-01-29 | 2002-12-17 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films |
JP2002231628A (en) * | 2001-02-01 | 2002-08-16 | Sony Corp | Method of forming semiconductor thin film, method of manufacturing semiconductor device, device used for carrying out the same, and electro-optical device |
TW521310B (en) | 2001-02-08 | 2003-02-21 | Toshiba Corp | Laser processing method and apparatus |
JP4291539B2 (en) | 2001-03-21 | 2009-07-08 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
JP2002353159A (en) | 2001-03-23 | 2002-12-06 | Sumitomo Heavy Ind Ltd | Processing apparatus and method |
US7061959B2 (en) | 2001-04-18 | 2006-06-13 | Tcz Gmbh | Laser thin film poly-silicon annealing system |
US7167499B2 (en) | 2001-04-18 | 2007-01-23 | Tcz Pte. Ltd. | Very high energy, high stability gas discharge laser surface treatment system |
JP2004520715A (en) | 2001-04-19 | 2004-07-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Method and system for single scan, continuous operation, sequential lateral crystallization |
TW480735B (en) | 2001-04-24 | 2002-03-21 | United Microelectronics Corp | Structure and manufacturing method of polysilicon thin film transistor |
JP5025057B2 (en) | 2001-05-10 | 2012-09-12 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
KR100379361B1 (en) | 2001-05-30 | 2003-04-07 | 엘지.필립스 엘시디 주식회사 | crystallization method of a silicon film |
KR100424593B1 (en) | 2001-06-07 | 2004-03-27 | 엘지.필립스 엘시디 주식회사 | A method of crystallizing Si |
SG108262A1 (en) | 2001-07-06 | 2005-01-28 | Inst Data Storage | Method and apparatus for cutting a multi-layer substrate by dual laser irradiation |
KR100662494B1 (en) | 2001-07-10 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | Method For Crystallizing Amorphous Layer And Method For Fabricating Liquid Crystal Display Device By Using Said Method |
JP4637410B2 (en) | 2001-07-17 | 2011-02-23 | シャープ株式会社 | Semiconductor substrate manufacturing method and semiconductor device |
JP4109026B2 (en) | 2001-07-27 | 2008-06-25 | 東芝松下ディスプレイテクノロジー株式会社 | Method for manufacturing array substrate and photomask |
JP2003045820A (en) | 2001-07-30 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus, and method, and method of manufacturing semiconductor device |
TW556350B (en) | 2001-08-27 | 2003-10-01 | Univ Columbia | A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region |
TWI279052B (en) | 2001-08-31 | 2007-04-11 | Semiconductor Energy Lab | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device |
TW582062B (en) | 2001-09-14 | 2004-04-01 | Sony Corp | Laser irradiation apparatus and method of treating semiconductor thin film |
JP3903761B2 (en) | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | Laser annealing method and laser annealing apparatus |
US6767804B2 (en) | 2001-11-08 | 2004-07-27 | Sharp Laboratories Of America, Inc. | 2N mask design and method of sequential lateral solidification |
US6962860B2 (en) | 2001-11-09 | 2005-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6526585B1 (en) | 2001-12-21 | 2003-03-04 | Elton E. Hill | Wet smoke mask |
US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4338988B2 (en) * | 2002-02-22 | 2009-10-07 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US6884668B2 (en) | 2002-02-22 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US7002668B2 (en) | 2002-03-08 | 2006-02-21 | Rivin Eugeny I | Stage positioning unit for photo lithography tool and for the like |
US7119365B2 (en) | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
US6792029B2 (en) | 2002-03-27 | 2004-09-14 | Sharp Laboratories Of America, Inc. | Method of suppressing energy spikes of a partially-coherent beam |
WO2003084688A2 (en) | 2002-04-01 | 2003-10-16 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a thin film |
US7192479B2 (en) | 2002-04-17 | 2007-03-20 | Sharp Laboratories Of America, Inc. | Laser annealing mask and method for smoothing an annealed surface |
US6984573B2 (en) | 2002-06-14 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and apparatus |
JP2004031809A (en) | 2002-06-27 | 2004-01-29 | Toshiba Corp | Photomask and method of crystallizing semiconductor thin film |
US7718517B2 (en) | 2002-08-19 | 2010-05-18 | Im James S | Single-shot semiconductor processing system and method having various irradiation patterns |
US7300858B2 (en) | 2002-08-19 | 2007-11-27 | The Trustees Of Columbia University In The City Of New York | Laser crystallization and selective patterning using multiple beamlets |
US7259081B2 (en) | 2002-08-19 | 2007-08-21 | Im James S | Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions |
KR101131040B1 (en) | 2002-08-19 | 2012-03-30 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions |
JP2004087535A (en) | 2002-08-22 | 2004-03-18 | Sony Corp | Method for manufacturing crystalline semiconductor material and method for manufacturing semiconductor device |
JP4474108B2 (en) | 2002-09-02 | 2010-06-02 | 株式会社 日立ディスプレイズ | Display device, manufacturing method thereof, and manufacturing apparatus |
JP4354165B2 (en) * | 2002-09-20 | 2009-10-28 | 株式会社半導体エネルギー研究所 | Laser irradiation apparatus and laser irradiation method |
US7067867B2 (en) | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
TW569350B (en) | 2002-10-31 | 2004-01-01 | Au Optronics Corp | Method for fabricating a polysilicon layer |
US20050269298A1 (en) * | 2002-11-05 | 2005-12-08 | Shin Hotta | Light irradiator and light irradiating method |
KR100646160B1 (en) | 2002-12-31 | 2006-11-14 | 엘지.필립스 엘시디 주식회사 | A mask for sequential lateral solidification and a silicon crystallizing method using the same |
US7341928B2 (en) | 2003-02-19 | 2008-03-11 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
US20040169176A1 (en) | 2003-02-28 | 2004-09-02 | Peterson Paul E. | Methods of forming thin film transistors and related systems |
DE602004020538D1 (en) | 2003-02-28 | 2009-05-28 | Semiconductor Energy Lab | Method and device for laser irradiation, and method for the production of semiconductors. |
KR100618184B1 (en) | 2003-03-31 | 2006-08-31 | 비오이 하이디스 테크놀로지 주식회사 | Method of crystallization |
JP4515136B2 (en) * | 2003-04-21 | 2010-07-28 | 株式会社半導体エネルギー研究所 | Laser beam irradiation apparatus and method for manufacturing thin film transistor |
JP4503343B2 (en) * | 2003-04-21 | 2010-07-14 | 株式会社半導体エネルギー研究所 | Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor |
TWI227913B (en) | 2003-05-02 | 2005-02-11 | Au Optronics Corp | Method of fabricating polysilicon film by excimer laser crystallization process |
JP4470395B2 (en) | 2003-05-30 | 2010-06-02 | 日本電気株式会社 | Method and apparatus for manufacturing semiconductor thin film, and thin film transistor |
JP4015068B2 (en) | 2003-06-17 | 2007-11-28 | 株式会社東芝 | Manufacturing method of semiconductor device |
KR100587368B1 (en) | 2003-06-30 | 2006-06-08 | 엘지.필립스 엘시디 주식회사 | Device for Sequential Lateral Solidification of silicon |
TWI294648B (en) | 2003-07-24 | 2008-03-11 | Au Optronics Corp | Method for manufacturing polysilicon film |
US6981573B2 (en) * | 2003-08-18 | 2006-01-03 | Reechcraft, Inc. | Scaffold lift system |
US7078793B2 (en) | 2003-08-29 | 2006-07-18 | Infineon Technologies Ag | Semiconductor memory module |
WO2005029549A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for facilitating bi-directional growth |
WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
WO2005029550A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for producing crystalline thin films with a uniform crystalline orientation |
WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
TWI366859B (en) | 2003-09-16 | 2012-06-21 | Univ Columbia | System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern |
US7364952B2 (en) | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
WO2005029548A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | System and process for providing multiple beam sequential lateral solidification |
KR100971951B1 (en) | 2003-09-17 | 2010-07-23 | 엘지디스플레이 주식회사 | Method for crystallization of amorphous silicon layer using excimer laser |
WO2005034193A2 (en) * | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
JP2005129769A (en) | 2003-10-24 | 2005-05-19 | Hitachi Ltd | Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor |
US7226819B2 (en) | 2003-10-28 | 2007-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Methods for forming wiring and manufacturing thin film transistor and droplet discharging method |
KR100698056B1 (en) | 2003-12-26 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | Laser Beam Pattern Mask and the Method for Crystallization with the Same |
KR100572519B1 (en) | 2003-12-26 | 2006-04-19 | 엘지.필립스 엘시디 주식회사 | Mask for laser crystallization process and laser crystallization process using the mask |
JP2005333117A (en) | 2004-04-23 | 2005-12-02 | Semiconductor Energy Lab Co Ltd | Laser irradiation device and method for manufacturing semiconductor device |
US7199397B2 (en) | 2004-05-05 | 2007-04-03 | Au Optronics Corporation | AMOLED circuit layout |
KR100689315B1 (en) | 2004-08-10 | 2007-03-08 | 엘지.필립스 엘시디 주식회사 | Device for crystallizing silicon thin layer and method for crystallizing using the same |
CN101111925A (en) | 2004-11-18 | 2008-01-23 | 纽约市哥伦比亚大学理事会 | System and method for generating polysilicon film controlled on crystallization direction |
WO2006055003A1 (en) | 2004-11-18 | 2006-05-26 | The Trustees Of Columbia University In The City Ofnew York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
JP5121118B2 (en) | 2004-12-08 | 2013-01-16 | 株式会社ジャパンディスプレイイースト | Display device |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
WO2007022234A1 (en) | 2005-08-16 | 2007-02-22 | The Trustees Of Columbia University In The City Of New York | Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers |
KR101132404B1 (en) | 2005-08-19 | 2012-04-03 | 삼성전자주식회사 | Method for fabricating thin film of poly crystalline silicon and method for fabricating thin film transistor having the same |
US7192818B1 (en) | 2005-09-22 | 2007-03-20 | National Taiwan University | Polysilicon thin film fabrication method |
JP4680850B2 (en) | 2005-11-16 | 2011-05-11 | 三星モバイルディスプレイ株式會社 | Thin film transistor and manufacturing method thereof |
KR101191404B1 (en) | 2006-01-12 | 2012-10-16 | 삼성디스플레이 주식회사 | Mask for silicone crystallization, method for crystallizing silicone using the same and display device |
KR20070094527A (en) | 2006-03-17 | 2007-09-20 | 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 | Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device |
TWI285434B (en) | 2006-03-17 | 2007-08-11 | Ind Tech Res Inst | Thin film transistor device with high symmetry |
CN101622722B (en) | 2007-02-27 | 2012-11-21 | 卡尔蔡司激光器材有限责任公司 | Continuous coating installation and methods for producing crystalline thin films and solar cells |
-
2006
- 2006-12-05 KR KR1020087016513A patent/KR101287314B1/en not_active IP Right Cessation
- 2006-12-05 TW TW095145233A patent/TW200733240A/en unknown
- 2006-12-05 CN CN2006800523224A patent/CN101617069B/en not_active Expired - Fee Related
- 2006-12-05 JP JP2008544439A patent/JP2009518864A/en active Pending
- 2006-12-05 WO PCT/US2006/046405 patent/WO2007067541A2/en active Application Filing
- 2006-12-05 US US12/095,450 patent/US8598588B2/en active Active
-
2013
- 2013-10-16 US US14/055,632 patent/US20140045347A1/en not_active Abandoned
Patent Citations (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4940505A (en) * | 1988-12-02 | 1990-07-10 | Eaton Corporation | Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation |
US5529951A (en) * | 1993-11-02 | 1996-06-25 | Sony Corporation | Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation |
US5571430A (en) * | 1993-12-28 | 1996-11-05 | Toyota Jidosha Kabushiki Kaisha | Method and system for processing workpiece with laser seam, with oscillation of beam spot on the workpeiece and beam oscillating apparatus |
US5846625A (en) * | 1994-08-26 | 1998-12-08 | Hitachi, Ltd. | Optical recording medium and information processing apparatus used therefor |
US5756364A (en) * | 1994-11-29 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method of semiconductor device using a catalyst |
US5766989A (en) * | 1994-12-27 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Method for forming polycrystalline thin film and method for fabricating thin-film transistor |
US5742426A (en) * | 1995-05-25 | 1998-04-21 | York; Kenneth K. | Laser beam treatment pattern smoothing device and laser beam treatment pattern modulator |
US5767003A (en) * | 1995-09-19 | 1998-06-16 | Sony Corporation | Thin film semiconductor device manufacturing method |
US6045980A (en) * | 1995-09-29 | 2000-04-04 | Leybold Systems Gmbh | Optical digital media recording and reproduction system |
US20050255640A1 (en) * | 1996-05-28 | 2005-11-17 | Im James S | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification |
US6455359B1 (en) * | 1997-02-13 | 2002-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser-irradiation method and laser-irradiation device |
US6516009B1 (en) * | 1997-02-28 | 2003-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiating device and laser irradiating method |
US6117752A (en) * | 1997-08-12 | 2000-09-12 | Kabushiki Kaisha Toshiba | Method of manufacturing polycrystalline semiconductor thin film |
US6482722B2 (en) * | 1999-04-19 | 2002-11-19 | Sony Corporation | Process of crystallizing semiconductor thin film and laser irradiation system |
US20070145017A1 (en) * | 2000-03-21 | 2007-06-28 | The Trustees Of Columbia University | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
US6577380B1 (en) * | 2000-07-21 | 2003-06-10 | Anvik Corporation | High-throughput materials processing system |
US6635932B2 (en) * | 2000-08-10 | 2003-10-21 | The Regents Of The University Of California | Thin film crystal growth by laser annealing |
US20030104682A1 (en) * | 2000-08-25 | 2003-06-05 | Fujitsu Limited | Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus |
US20050145845A1 (en) * | 2002-09-25 | 2005-07-07 | Advanced Lcd Technologies Dev. Ctr. Co., Ltd | Semiconductor device, annealing method, annealing apparatus and display apparatus |
US20050037552A1 (en) * | 2003-04-21 | 2005-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam irradiation apparatus, beam irradiation method, and method for manufacturing semiconductor device |
US20080176414A1 (en) * | 2003-09-16 | 2008-07-24 | Columbia University | Systems and methods for inducing crystallization of thin films using multiple optical paths |
US20050169330A1 (en) * | 2004-01-30 | 2005-08-04 | Mikio Hongo | Laser annealing apparatus and annealing method of semiconductor thin film |
US20050233491A1 (en) * | 2004-03-31 | 2005-10-20 | Konica Minolta Holdings, Inc. | Thin-film transistor sheet and manufacturing method thereof |
US20070148834A1 (en) * | 2004-06-18 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
US20060102901A1 (en) * | 2004-11-18 | 2006-05-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-Silicon films |
US20090309104A1 (en) * | 2004-11-18 | 2009-12-17 | Columbia University | SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS |
US20070238270A1 (en) * | 2006-04-06 | 2007-10-11 | Boe Hydis Technology Co., Ltd. | Method for forming polycrystalline film |
US20090137105A1 (en) * | 2007-11-21 | 2009-05-28 | Trustees Of Columbia University | Systems and methods for preparing epitaxially textured polycrystalline films |
US20120045191A1 (en) * | 2007-11-21 | 2012-02-23 | Columbia University | Systems and methods for preparing epitaxially textured polycrystalline films |
US20110108108A1 (en) * | 2008-02-29 | 2011-05-12 | The Trustees Of Columbia University In The City Of | Flash light annealing for thin films |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110309370A1 (en) * | 2008-11-14 | 2011-12-22 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
US8802580B2 (en) * | 2008-11-14 | 2014-08-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
US10103180B2 (en) | 2011-11-24 | 2018-10-16 | Samsung Display Co., Ltd. | Crystallization apparatus, crystallizing method, and method of manufacturing organic light-emitting display apparatus |
WO2017210182A1 (en) * | 2016-05-30 | 2017-12-07 | The Trustees Of Columbia University In The City Of New York | Scape microscopy with phase modulating element and image reconstruction |
US10908088B2 (en) | 2016-05-30 | 2021-02-02 | The Trustees Of Columbia University In The City Of New York | SCAPE microscopy with phase modulating element and image reconstruction |
Also Published As
Publication number | Publication date |
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CN101617069B (en) | 2012-05-23 |
US8598588B2 (en) | 2013-12-03 |
JP2009518864A (en) | 2009-05-07 |
US20090001523A1 (en) | 2009-01-01 |
TW200733240A (en) | 2007-09-01 |
WO2007067541A3 (en) | 2009-04-30 |
WO2007067541A2 (en) | 2007-06-14 |
KR20080086880A (en) | 2008-09-26 |
KR101287314B1 (en) | 2013-07-17 |
CN101617069A (en) | 2009-12-30 |
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