US20150165671A1

US20150165671A1 - Safe separation for nano imprinting

Info

Publication number: US20150165671A1
Application number: US14/632,125
Authority: US
Inventors: Se-Hyuk Im; Mahadevan GanapathiSubramanian; Edward Brian Fletcher; Niyaz Khusnatdinov; Gerard M. Schmid; Mario Johannes Meissl; Anshuman Cherala; Frank Y. Xu; Byung-Jin Choi; Sidlgata V. Sreenivasan
Original assignee: Canon Nanotechnologies Inc; Molecular Imprints Inc
Current assignee: Canon Nanotechnologies Inc
Priority date: 2010-04-27
Filing date: 2015-02-26
Publication date: 2015-06-18
Also published as: JP6018268B2; JP5833636B2; EP2564271B1; KR20130073890A; KR101960362B1; US11020894B2; TWI576229B; KR20180018848A; EP2564271A1; US20190061228A1; JP2013532369A; WO2011139782A1; JP2015195409A; TW201144045A; US8968620B2; US20110260361A1

Abstract

Control of lateral strain and lateral strain ratio (d_t/d_b) between template and substrate through the selection of template and/or substrate thicknesses (T_tand/or T_b), control of template and/or substrate back pressure (P_tand/or P_b), and/or selection of material stiffness are described.

Description

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. application Ser. No. 13/095,514 filed Apr. 27, 2011, which claims priority to U.S. Provisional Application No. 61/328,353 filed Apr. 27 2010; each of which is hereby incorporated by reference.

BACKGROUND INFORMATION

Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller. One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. The semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate; therefore nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Pat. No. 8,349,241, U.S. Patent Publication No. 2004/0065252, and U.S. Pat. No. 6,936,194, each of which is hereby incorporated by reference herein.
An imprint lithography technique disclosed in each of the aforementioned U.S. patent publication and patents includes formation of a relief pattern in a formable (polymerizable) layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process. The patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid. After solidification, the template is separated from the rigid layer such that the template and the substrate are spaced apart. The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.

BRIEF DESCRIPTION OF DRAWINGS

So that features and advantages of the present invention can be understood in detail, a more particular description of embodiments of the invention may be had by reference to the embodiments illustrated in the appended drawings. It is to be noted, however, that the appended drawings only illustrate typical embodiments of the invention, and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

FIG. 1 illustrates a simplified side view of a lithographic system.

FIG. 2 illustrates a simplified side view of the substrate illustrated in FIG. 1, having a patterned layer thereon.

FIGS. 3A-3B illustrate a simplified side view and magnified view of lateral strain (side motion) of a template and a substrate during an imprint lithography separation process.

FIGS. 4A-4B illustrate a simplified side view and magnified view of lateral strain (side motion) of a template during an imprint lithography separation process.

FIG. 5 illustrates a graphical representation of lateral strain ratio of interfacing template and substrate as a function of thickness ratio and back pressure (absolute pressure).

FIG. 6 illustrates a graphical representation of lateral strain ratio of interfacing template and substrate having variable thicknesses and substantially similar back pressure.

FIG. 7 illustrates a graphical representation of lateral strain ratio of interfacing template and substrate having substantially similar thicknesses and variable back pressure.

DETAILED DESCRIPTION

Referring to the figures, and particularly to FIG. 1, illustrated therein is a lithographic system 10 used to form a relief pattern on substrate 12. Substrate 12 may be coupled to substrate chuck 14. As illustrated, substrate chuck 14 is a vacuum chuck. Substrate chuck 14, however, may be any chuck including, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or the like. Exemplary chucks are described in U.S. Pat. No. 6,873,087, which is hereby incorporated by reference herein.
Substrate 12 and substrate chuck 14 may be further supported by stage 16. Stage 16 may provide translational and/or rotational motion along the x, y, and z-axes. Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
Spaced-apart from substrate 12 is template 18. Template 18 may include a body having a first side and a second side with one side having a mesa 20 extending therefrom towards substrate 12. Mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Alternatively, template 18 may be formed without mesa 20.
Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations (e.g., planar surface). Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.
Template 18 may be coupled to chuck 28. Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Pat. No. 6,873,087. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
System 10 may further comprise a fluid dispense system 32. Fluid dispense system 32 may be used to deposit formable material 34 (e.g., polymerizable material) on substrate 12. Formable material 34 may be positioned upon substrate 12 using techniques, such as, drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. Formable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 22 and substrate 12 depending on design considerations. Formable material 34 may be functional nano-particles having use within the bio-domain, solar cell industry, battery industry, and/or other industries requiring a functional nano-particle. For example, formable material 34 may comprise a monomer mixture as described in U.S. Pat. No. 7,157,036 and U.S. Patent Publication No. 2005/0187339; both of which are herein incorporated by reference. Alternatively, formable material 34 may include, but is not limited to, biomaterials (e.g., PEG), solar cell materials (e.g., N-type, P-type materials), and/or the like.
Referring to FIGS. 1 and 2, system 10 may further comprise energy source 38 coupled to direct energy 40 along path 42. Imprint head 30 and stage 16 may be configured to position template 18 and substrate 12 in superimposition with path 42. System 10 may be regulated by processor 54 in communication with stage 16, imprint head 30, fluid dispense system 32, and/or source 38, and may operate on a computer readable program stored in memory 56.
Either imprint head 30, stage 16, or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by formable material 34. For example, imprint head 30 may apply a force to template 18 such that mold 20 contacts formable material 34. After the desired volume is filled with formable material 34, source 38 produces energy 40, e.g., ultraviolet radiation, causing formable material 34 to solidify and/or cross-link conforming to a shape of surface 44 of substrate 12 and patterning surface 22, defining patterned layer 46 on substrate 12. Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having a thickness t₁and residual layer having a thickness t₂.
The above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Pat. No. 6,932,934, U.S. Pat. No. 7,077,992, U.S. Pat. No. 7,179,396, and U.S. Pat. No. 7,396,475, each of which is hereby incorporated by reference in its entirety.
After formation of patterned layer 46, template 18 or mold 20 and features 50 and 52 of patterned layer 46 may be separated. Generally, the separation effort includes application of force to separate two “plate-like” structures (i.e., template 18 and substrate 12). Separation generally needs to be performed without causing excessive stress and/or strain to template 18 or mold 20 and/or imprinted features 50 and 52 of patterned layer 46. If template 18 and substrate 12 are pulled out in a relatively normal direction (e.g., without a tilting motion), the separation front moves inward (in radial) from a boundary of patterned layer 46. If additional tilting motion is applied, the separation front may move fairly in-parallel lines starting from a remote side from the tilting axis. Exemplary separation front schemes are described in further detail in U.S. Pat. No. 7,701,112, U.S. Pat. No. 8,075,299, U.S. Pat. No. 7,635,445, and U.S. Pat. No. 7,635,263, which are hereby incorporated by reference in their entirety.
As illustrated in FIG. 3A, template 18 a and substrate 12 a may form a small angle Θ at a separation front, which is equal to the sum of the relative bending angles Θ₁of the template 18 a and Θ₂of the substrate 12 a with respect to un-deformed plane PL₁. Here, P is the pressure at the gap between the template and substrate outside of the imprinted area, P_tand P_brepresent the pressure, if any, applied to the template backside and the substrate backside, respectively. Relative bending angles Θ₁of the template 18 a and Θ₂of the substrate 12 a with respect to un-deformed plane PL₁are functions of multiple variables including, but not limited to, thickness, Young's modulus, pressures, adhesion between template 18 a and patterned layer 46, and the like. FIG. 3B shows two lateral motions at the separation front between the template and substrate where d_tis the lateral displacement (or lateral strain) of the template features and d_bis the lateral displacement (or lateral strain) of the imprinted features on the substrate.
FIG. 4 illustrates strain d_tof template 18 a with respect to substrate 12 a where it is assumed that the substrate is rigid with no bending at all. Template 18 a thus exhibits a lateral strain d_tbut the substrate d_bhas zero lateral strain. As illustrated, in such a case where the lateral strains are not matched between the template features and the substrate features, imprinted features 50 a and 52 a will be distorted or fail. In order to prevent the feature failure, it is advantageous to allow the substrate 12 a to bend or stretch and its lateral strain d_bto be matched with that of the template (d_t).
The bending amounts of the template and substrates are inverse proportional to (ET³), wherein E is Young's modulus of the template or substrate material and T is the template or substrate thickness. Subsequently, the strain is a function of the bending multiplied with the thicknesses (T). Therefore, strain magnitude is inverse proportional to (ET²). Then, the ratio of two lateral strains (d_t/d_b) at the interfacing surfaces of template 18 a and substrate 12 is proportional to (E_bT_b ²)/(E_tT_t ²).
FIGS. 5-7 illustrate graphic plots of lateral stain ratio (d_t/d_b) in relation to thicknesses of template 18 a and substrate 12 a (T_b/T_t). Generally, solid lines 70-70 b represent the strain ratio of template 18 a and substrate 12 a under substantially similar boundary conditions (e.g., back pressure). Dashed lines 72, 72 b and 74 represent template 18 a and substrate 12 a under substantially different boundary conditions (e.g., back pressure).
FIG. 5 illustrates a graphic plot 68 of lateral strain ratio (d_t/d_b) for combinations of thicknesses during separation of template 18 a and substrate 12 a. For example, under substantially similar boundary conditions (i.e., reference line 70), when thickness of thickness T_ttemplate 18 a is significantly less than thickness T_bsubstrate 12 a (T_t<<T_b), separation front may be formed mainly by bending of template 18 a. In this example, the ratio of the strain (d_t/d_b) is larger than (E_b/E_t). Alternatively, having thickness T_bof substrate 12 a significantly less than thickness T_tof template 18 a (T_b<<T_t), the ratio of the strain (d_t/d_b) is smaller than (E_b/E_t).
An optimal case may exist wherein strain ratio (d_t/d_b) becomes 1 for template 18 a and substrate 12 a. When the template and the substrate have the same Young's modulus, the optimal configuration is when template 18 a and substrate 12 a have substantially similar thicknesses T_tand T_brespectively and is under near identical process conditions (e.g., back pressure, constraining boundary conditions). It should be noted that pressure is both positive and negative pressure (vacuum).
Having template 18 a and substrate 12 constrained by means of different back supporting (i.e., adjusting the material stiffness) or through the application of back pressure (positive pressure and/or vacuum), however, may significantly influence stress and/or lateral strain. For example, as illustrated in FIG. 5, curves 72 and 74 illustrate lateral strain ratio (d_t/d_b) when template 18 a and substrate 12 a are under different back pressure conditions. Curve 72 represents the relative lateral strain ratio (d_t/d_b) when back pressure of substrate 12 a is lower (e.g. −30 Kpa) than that of template 18 a (e.g. 0 Kpa), and curve 74 represents the opposite case (i.e., where back pressure of substrate 12 a is higher than that of template 18 a). For example, having only substrate 12 a vacuum chucked may influence bending geometry to cause excessive strain during the separation process. Based on the graphical representation, thickness T_tof template 18 a may be configured (e.g., increased) greater than thickness T_bof substrate 12 a such that bending stiffness of template 18 a may be increased in order to compensate for a differences in backside pressure, separation force, and/or template geometry.
Thickness of substrate 12 a, however, is generally not a freely selectable variable. For example, semiconductor wafers of 8 inch or 12 inch diameters generally include an industry standard for thickness for substrate 12 a. For compensation, thickness T_tof template 18 a may be determined based on pre-selected thickness T_bfor substrate 12 a. Additionally, thickness T_tof template 18 a may be determined based on material stiffness (e.g., Young's modulus), back pressure, and the like, such that lateral strain d_tmay be minimized or eliminated. Alternatively, back pressure of template 18 a can be controlled such that lateral strain ratio (d_t/d_b) may be approximately 1.
More specifically, back pressure P_tand/or P_bapplied to the template and/or the substrate (see FIG. 3A), can be adjusted in order to modify lateral strain d_tand/or lateral strain d_bto yield a lateral strain ratio (d_t/d_b) of approximately 1. The amount and degree of back pressure P_tand/or P_bthat is necessary to provide can be predetermined based on the Young's modulus, thickness of the template and substrate, and the separation force to be applied. Control and supply of such back pressure to a template can be provided using chucks and systems described in, for example, U.S. Pat. No. 7,019,819, incorporated herein by reference. Control and supply of such back pressure to a substrate can be provided using chucks and systems described in, for example, U.S. Pat. No. 7,635,263 and U.S. Pat. No. 7,635,445, each of which is incorporated herein by reference.
FIG. 6 illustrates a graphic plot 76 of lateral strain ratio (d_t/d_b) for combinations of thicknesses. Graphic plot 76 provides an exemplary method for optimizing lateral strain ratio (d_t/d_b) wherein thickness T_tand T_bof either template 18 a or substrate 12 a is a controllable variable. For example, substrate 12 a may be formed of Si having a Young's modulus of approximately 150 GPa, thickness T_bof approximately 0.775 mm. Template 18 a may be formed of fused silica having a Young's modulus of approximately 75 GPa. Then, lateral strain ratio (d_t/d_b) is a quadratic function passing (0,0) and (1,2). As such, for an ideal lateral strain ratio (d_t/d_b) of 1, thickness ratio should be the square root of 0.5 based on (E_bT_b ²)/(E_tT_t ²). Therefore, thickness T_tof template 18 a may need to be at approximately 1.1 mm. Substantially identical back pressure may need to be provided to both template 18 a and substrate 12 a. For example, back pressure may be maintained at approximately −30 Kpa at both template 18 a and substrate 12 a. A small variation of the back pressures can be optimized based on the separation force to be applied. Alternatively, when template 18 a is under ambient pressure, at least a portion of substrate 12 a may be under substantially the same back pressure (e.g., ambient) while the remaining portions of substrate 12 a are subjected to a different back pressure. Systems and methods for providing differing levels of pressure are further described in U.S. Pat. No. 7,019,819, U.S. Pat. No. 7,635,263 and U.S. Pat. No. 7,635,445, each of which is hereby incorporated by reference in its entirety.
FIG. 7 illustrates a graphic plot 78 of lateral strain ratio (d_t/d_b) wherein thicknesses are not controlled variables. Graphic plot 76 provides an exemplary method for optimizing lateral strain ratio (d_t/d_b) wherein thickness T_tand T_bof either template 18 a or substrate 12 a is not a control variable. Material properties of template 18 a and substrate 12 a may be substantially similar. Thickness T_tand T_bof template 18 a and substrate 12 a may have a fixed ratio. For example, in one embodiment, the fixed ratio may be set to T_b/T_t=0.18. Generally, the “thicker” of template 18 a or substrate 12 a may need additional support of high back pressure while the “thinner” of template 18 a or substrate 12 a may need back pressure having a low pressure (e.g., vacuum). For example, for fused silica material, back pressure between approximately 40 Kpa to 90 Kpa may be used for the thicker of template 18 a and substrate 12 a and back pressure between approximately −40 Kpa to 0 Kpa may be used for the thinner of template 18 a and substrate 12 a. Actual numbers may be determined using an analytical model and/or finite element analysis. Further, back pressure levels for template 18 a and substrate 12 a may be adjusted as separation propagates.
Control of lateral strain of template 18 a and substrate 12 a through the selection of thicknesses T_tand/or T_b, control of back pressure, and/or selection of material stiffness may be applied to other separation methods including, but not limited to, those further described in U.S. Pat. No. 7,636,999, U.S. Pat. No. 7,701,112, U.S. Pat. No. 8,075,299, U.S. Pat. No. 7,635,445, and U.S. Pat. No. 7,635,263.
Further modifications and alternative embodiments of various aspects will be apparent to those skilled in the art in view of this description. Accordingly, this description is to be construed as illustrative only. It is to be understood that the forms shown and described herein are to be taken as examples of embodiments. Elements and materials may be substituted for those illustrated and described herein, parts and processes may be reversed, and certain features may be utilized independently, all as would be apparent to one skilled in the art after having the benefit of this description. Changes may be made in the elements described herein without departing from the spirit and scope as described in the following claims.

Claims

What is claimed is:

1. A nanolithography imprint system comprising:

a substrate having a thickness T_band formed of a material having a Young's modulus (E_b);

a template in superimposition with the substrate, the template having a thickness T_tand formed of a material having a Young's modulus (E_t), the template thickness T_tselected such that, during separation of the template and substrate, the lateral strains d_tand d_bassociated with the template and substrate, respectively, are matched.

2. The nanolithography imprint system of claim 1 wherein the substrate is Si and the template is fused silica.

3. The nanolithography imprint system of claim 2 wherein T_bis approximately 0.775 mm and T_tis approximately 1.1 mm.

4. The nanolithography imprint system of claim 1 wherein template thickness T_tis greater than substrate thickness T_b.

5. A nanolithography imprint system comprising:

a substrate having a thickness (T_b) and being formed of a material having a Young's modulus (E_b);

a template in superimposition with the substrate, the template having a thickness (T_t) and being formed of a material having a Young's modulus (E_t);

chucks and systems configured for supplying and controlling back pressure to the template and/or back pressure to the substrate, such that, during separation of the template and the substrate, the lateral strains d_tand d_bassociated with the template and substrate, respectively, are matched.

6. The nanolithography imprint system of claim 5, wherein the amount and degree of back pressure applied to the template and to the substrate is predetermined based on the Young's modulus, thickness of the template and substrate, and the separation force to be applied.

7. The nanolithography system of claim 6, further comprising a system configured for controlling a back pressure applied to the template and a system configured for controlling the back pressure applied to the substrate.

8. The nanolithography system of claim 7, wherein the template and the substrate are formed of the same material, such that E_tand E_bare the same, wherein the template thickness T_tis greater than the substrate thickness T_b, and wherein the systems for controlling back pressure are configured such that positive back pressure is applied to the template and negative back pressure is applied to the substrate.

9. The nanolithography system of claim 7, wherein the template and the substrate are formed of the same material, such that E_tand E_bare the same, wherein the template thickness T_tis less than the substrate thickness T_b, and wherein the systems for controlling back pressure are configured such that negative back pressure is applied to the template and positive back pressure is applied to the substrate.

10. The nanolithography system of claim 7 wherein the systems for controlling back pressure are configured to

determine the differences between the lateral strains d_tand d_busing an analytical model and/or finite element analysis prior to application of back pressure; and

based on the determined differences between lateral strains d_tand d_b, determine the amount of back pressure to apply to the template, the substrate, or both, such that the lateral strains d_tand d_bbecome matched when the separation force is applied.

11. A nanolithography imprint system comprising:

a substrate and a template for forming a patterned layer on the substrate, the template and the substrate having lateral strains d_tand d_bassociated therewith, respectively, when subsequently subjected to a separation force to separate the template from the patterned layer once formed;

systems configured for controlling a back pressure applied to the template and the substrate, and further configured to determine the differences between the lateral strains d_tand d_busing an analytical model and/or finite element analysis and based on the determined differences between the lateral strains d_tand d_b, determine the amount of back pressure to apply to the template, the substrate, or both, such that the lateral strains d_tand d_bbecome matched when the separation force is applied.

12. The nanolithography imprint system of claim 11, wherein the amount and degree of back pressure applied to the template and to the substrate is predetermined based on the Young's modulus, thickness of the template and substrate, and the separation force to be applied.

13. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply back pressure prior to applying the separation force.

14. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply back pressure concurrently with applying the separation force.

15. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply back pressure only to the template.

16. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply back pressure only to the substrate.

17. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply positive pressure.

18. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply negative pressure.

19. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply positive pressure to the template and negative pressure to the substrate.

20. The nanolithography imprint system of claim 11 wherein the back pressure control systems are further configured to apply negative pressure to the template and positive pressure to the substrate.