US20150263256A1 - Light-emitting array - Google Patents
Light-emitting array Download PDFInfo
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- US20150263256A1 US20150263256A1 US14/657,714 US201514657714A US2015263256A1 US 20150263256 A1 US20150263256 A1 US 20150263256A1 US 201514657714 A US201514657714 A US 201514657714A US 2015263256 A1 US2015263256 A1 US 2015263256A1
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from that of the first segment.
Description
- This application claims priority to and the benefit of a U.S. Provisional Application Ser. No. 61/953,236 filed on Mar. 14, 2014, a U.S. Provisional Application Ser. No. 61/973,394 filed on Apr. 1, 2014, and a U.S. Provisional Application Ser. No. 61/973,423 filed on Apr. 1, 2014, which is incorporated by references in its entirety.
- 1. Technical Field
- The present application discloses a light-emitting array comprising multiple semiconductor light-emitting stacks and conductive wires connecting the semiconductor light-emitting stacks.
- 2. Description of the Related Art
- Following incandescent light, traditional lighting devices have been gradually substituted by solid-state lighting devices consisted of the light-emitting diodes because the light-emitting diodes (LEDs) have the characteristics of low power consumption, environment friendly, long life span, and compact. Moreover, the LED capable of emitting a white light has a strong need in the market.
- Thus, the LED is gradually adopted in several aspects of applications. For example, some monitors are using LEDs as the light-emitting units of a backlight module, and some cameras or cellphones adopt LEDs as the flash lights. Furthermore, the LED not only provides luminance for people to see the object; in some products, the LEDs are applied to pixels of a display, that is the LED is formed in an LED based monitor, such as an LED TV, or formed in an outdoor billboard for the benefit of high reliability against the sunlight, wind or rain.
- An light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connecting to the first light-emitting chip and the second light-emitting chip, wherein the conductive line comprises a first segment and a second segment having a radius curvature different from that of the first portion.
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FIG. 1A shows a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. -
FIG. 1B shows a cross-sectional view along U-U′ line inFIG. 1A . -
FIG. 1C shows a cross-sectional view along V-V′ line inFIG. 1A . -
FIG. 1D shows a top view of the light-emitting array ofFIG. 1A in a stretched state. -
FIGS. 1E˜1I show the process of manufacturing the structures inFIGS. 1A˜1D . -
FIG. 2A shows a top view of a light-emitting array in an un-stretched state in accordance with further embodiment of the present invention. -
FIG. 2B shows a top view of the light-emitting array ofFIG. 2A in a stretched state. -
FIGS. 2C-2D show cross-sectional views along V-V′ line and along U-U′ line inFIG. 2A . -
FIG. 3A shows a top view of a light-emitting array in an un-stretched state in accordance with another embodiment of the present invention. -
FIG. 3B shows a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. -
FIGS. 3C-3G show conductive line in accordance with embodiments of the present application. -
FIG. 4A shows a top view of a light-emitting array in an un-stretched state in accordance with another embodiment of the present invention. -
FIG. 4B shows a top view of the light-emitting array in a stretched state. -
FIG. 4C shows cross-sectional views of an LED array shown inFIG. 4A . -
FIG. 4D shows a top view of a light-emitting array in an un-stretched state in accordance with further embodiment of the present invention. -
FIG. 4E shows a cross-sectional view of a light-emitting group in accordance with an embodiment of the present invention. -
FIG. 5A shows a top view in an un-stretched state in accordance with a more embodiment of the present invention. -
FIG. 5B shows a cross-sectional view along the line A-A′ inFIG. 5A . -
FIG. 5C shows a cross-sectional view taken along the line B-B′ inFIG. 5A . -
FIGS. 5D-5H show control element in accordance with an embodiment of the present application. -
FIG. 6A shows a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. -
FIG. 6B shows a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. -
FIGS. 7A-7G show steps of making the light-emitting array ofFIG. 1A . -
FIGS. 8A-8G show the manufacturing steps related to the embodiment of the application. -
FIGS. 9A-9E show a cross-sectional view and manufacturing process in accordance with a further embodiment of the present invention. -
FIGS. 10A-10F show a structure of the light-emittingunit 30 in accordance with an embodiment of the present invention. -
FIGS. 11A-11F show a structure of the light-emittingunit 30 in accordance with an embodiment of the present invention. -
FIGS. 12A-12G show a structure of the light-emittingunit 30 in accordance with an embodiment of the present invention. -
FIGS. 13A-13B show a structure of the light-emittingunit 30 in accordance with an embodiment of the present invention. - To better and concisely explain the disclosure, the same name or the same reference number given or appeared in different paragraphs or figures along the specification should has the same or equivalent meanings while it is once defined anywhere in the disclosure.
- The following shows the description of the embodiments of the present disclosure in accordance with the drawings.
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FIG. 1A illustrates a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. The light-emitting array is a 2-dimension array and includes a plurality of light-emittingchips 41. Each of the light-emittingchips 41 has two first pads 301 (n-pad or p-pad) and a second pad 302 (p-pad or n-pad). The light-emittingchips 41 are electrically connected to each other by a plurality of extendable or stretchable conductive line 23 (A1-An and B1-Bn). Specifically, thesecond pads 302 of two adjacent light-emittingchips 41 are electrically connected by the conductive line 23 (B1-Bn). One of thefirst pads 301 of a light-emittingchips 41 is electrically connected to the other of thefirst pad 301 of adjacent light-emittingchip 41 by the conductive line 23 (A1-An). Therefore, for example, when the conductive lines 23 (An−1 and B1) are electrically connected to an external element (such as power supply or IC), the light-emittingchip 41A can emit light; when the conductive lines 23 (An and Bn) are electrically connected to the external element (power supply or IC), the light-emittingchip 41C can emit light. By selectively connecting theconductive line 23 with the external element, a specific light-emittingchip 41 can emit light. The light-emitting array can be used as a backlight for a display or formed to be an LED display. The light-emittingchips 41 are separated from each other on asubstrate 11 by a distance (D1) larger than 1 mil. In one embodiment, theconductive line 23 has two connectingsegments 231, and astretchable segment 232 electrically and physically connected to the two connectingsegments 231. Thestretchable segment 232 further includes a portion having a radius curvature different from that of the connectingsegment 231. To be more specific, theconductive line 23 connecting two adjacent light-emittingchips 41 arranged in an X direction has two connectingsegments 231 and onestretchable segment 232. Thestretchable segment 232 has a length (L1) and a curved or straight shape. Theconductive line 23 connecting two adjacent light-emittingchips 41 arranged in a Y direction has two connectingsegments 231 and onestretchable segment 232. Thestretchable segment 232 has a length (L2) and a curved or straight shape. Moreover, it can have none, one or more connectingsegments 231 formed on each light-emittingchip 41. If no connecting segment is formed, thestretchable segment 232 is directly connected to the light-emittingchip 41. If two or more connectingsegments 231 are formed, each connectingsegment 231 can be connected to at least onestretchable segment 232 in an X direction or in a Y direction. - In another embodiment, the width of the connecting
segment 231 is larger than the width of thestretchable segment 232. However, various modifications and variations can be made to theconductive line 23 in accordance with the present disclosure without departing from the scope or spirit of the disclosure. -
FIG. 1B shows a cross-sectional view along U-U′ line inFIG. 1A . Each of the light-emittingchips 41 has a light-emitting stack, which includes a first-type semiconductor layer 311, anactive layer 312, and a second-type semiconductor layer 313, which are epitaxially grown on the substrate 11 (sapphire, SiC, GaN or GaAs). The structure of theactive layer 312 can be single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH) or multi-quantum well (MQW) structure. Each of the light-emittingchips 41 has twofirst pads 301 formed on the first-type semiconductor layer 311 and asecond pad 302 formed on the second-type semiconductor layer 313. For example, thefirst pad 301 is an n-pad (or p-pad) and thesecond pad 302 is a p-pad (or n-pad). A plurality offirst trenches 111 is formed on thesubstrate 11 between two adjacent light-emittingchips 41. Theconductive line 23 electrically connects thefirst pads 301 of two adjacent light-emittingchips 41. The symbol ofconductive line 23 inFIG. 1B represents one or more connectingsegments 231 and astretchable segment 232 as shown inFIG. 1B . A plurality ofsecond trenches 112 is also formed on the other side of thesubstrate 11 opposite to thefirst trenches 111. Thetrench substrate 11 by laser or within thesubstrate 11 by SD (Stealth Dicing) laser. It is noted that a scarifiedlayer 24 is optionally formed between theconductive line 23 and thesubstrate 11 at a position corresponding to thefirst trench 111, thesecond trench 112, or both. The position of thetrench 111 corresponding to thesubstrate 11 and the position of thetrench 112 corresponding to thesubstrate 11 can be the same or different. The first-type semiconductor layer 311 and the second-type semiconductor layer 313 respectively provide electrons and holes such that electrons and holes can be combined in theactive layer 312 to emit light. Theactive layer 312 can be made of AlxInyGa(1−x−y)P, wherein 0≦x, y≦1; (x+y)≦1, to emit a red light with a peak wavelength within a range between 610-650 nm; can be made of AlxInyGa(1−x−y)N, wherein 0≦x, y≦1; (x+y)≦1, to emit a green light with a peak wavelength within a range between 530-570 nm; or can be made of AlxInyGa(1−x−y)N, wherein 0≦x, y≦1; (x+y)≦1, to emit a blue light with a peak wavelength within a range between 450-490 nm. It is noted that the light-emittingchips 41 in the light-emitting array can emit different light. For example, one of the light-emittingchips 41 can emit a red light, and one of the light-emittingchips 41 can emit a blue light. -
FIG. 1C shows a cross-sectional view along V-V′ line inFIG. 1A . Theconductive line 23 electrically connects thesecond pads 302 of two adjacent light-emittingchips 41 with each other. Before stretching, the light-emittingchips 41 are separated by thetrench elements 40 as shown inFIGS. 1D and 7F is formed. A detail process is described below. -
FIG. 1D shows a top view of the light-emitting array of the first embodiment in a stretched state. After forming a plurality of the light-emittingelements 40, a force is applied to theconductive line 23 or the light-emittingelements 40 in the X direction to stretch thestretchable segment 232. The light-emittingelements 40 are therefore moved away from each other, and the light-emittingelements 40 are separated by a distance (D2) larger than the distance (D1) inFIG. 1A in the X direction. As shown inFIGS. 1D and 1A , it is noted that thestretchable segment 232 has a length (L3) similar or equal to the length (L1). In other words, the length of thestretchable segment 232 is almost kept unchanged before and after stretching. Thestretchable segment 232 is designed to have a curved or sinuous shape at initial, as illustrated inFIG. 1A , and thestretchable segment 232 is then to be stretched to be a straight line as shown inFIG. 1D . The stretchedstretchable segment 232 can have a shape including but not limited to a straight line, a curved line, and a combination thereof. Moreover, the curved line can have one or more curvatures. The distance (D2) or a length of thestretchable segment 232 after stretching or a distance (D3) between two adjacent connectingsegments 231 has a maximum value while thestretchable segment 232 is stretched to a maximum extent but not beyond its elastic limit. Therefore, the longer the length (L1), the larger the distance between two adjacent light-emittingelements 40 can be. In one embodiment, the distance (D3) can be in a range between a length in the un-stretched state (seeFIG. 1A ) and a length in the stretched state (seeFIG. 1D ), depending on requirements. It is noted that when theconductive line 23 is made of a rigid and elastic material, a line width of thestretchable segment 232 can be substantially the same before and after stretching. When theconductive line 23 is made of a ductile and malleable material, a line width of thestretchable segment 232 after stretching can be narrower than that before stretching. In an embodiment, thestretchable segment 232 has a line width of 5-15 μm before stretching and thestretchable segment 232 has a line width of 4-15 μm after stretching. Theconductive line 23 is made of an elastic material, such as Cu, Al, Ag, Au or alloy thereof. In an embodiment, a ratio between the distance of two parallelconductive lines 23 arranged in X direction and a width of the light-emittingelements 40 in X direction is between 2 to 10. Likewise, another force is applied to theconductive line 23 or the light-emittingelements 40 in a Y direction to stretch thestretchable segment 232 of theconductive line 23, the light-emittingelements 40 are therefore moved away from each other. The light-emittingelements 40 are separated by a distance (D4) larger than the distance (D1) inFIG. 1A in the Y direction. As shown inFIGS. 1D and 1A , thestretchable segment 232 has a length (L4) similar to or equal to the length (L2). In other words, the length of thestretchable segment 232 is almost kept unchanged before and after stretching. Thestretchable segment 232 has a curved or sinuous shape, as illustrated inFIG. 1A , however, thestretchable segment 232 is deformed to become a straight line inFIG. 1D . The stretchedstretchable segment 232 can have a shape including but not limited to a straight line, a curved line, and a combination thereof. Moreover, the curved line can have one or more curvatures. A distance (D4) or a length of thestretchable segment 232 after stretching or a distance (D5) between the twofirst segments 231 of adjacent light-emittingelements 40 has a maximum value while thestretchable segment 232 is stretched to a maximum extent but not beyond its elastic limit. Therefore, the longer the length (L2), the larger the distance between two adjacent light-emittingelements 40 can be. In one embodiment, the distance (D5) can be in a range between a length in the un-stretched state (seeFIG. 1A ) and a length in the stretched state (seeFIG. 1D ), depending on the actual requirements. - The process of manufacturing the structures in
FIGS. 1A˜1D is shown inFIGS. 1E˜1I . Referring toFIGS. 1E˜1F , the light-emittingchips 41 are formed on afirst growth substrate 13 a (or located on a first temporary substrate), and theconductive lines 23 are formed on asecond growth substrate 13 b (or located on a second temporary substrate). Referring toFIGS. 1G˜1I , the light-emittingchips 41 and theconductive lines 23 are connected to each other; then, thefirst growth substrate 13 a and thesecond growth substrate 13 b are sequentially removed. -
FIG. 2A shows a top view of a light-emitting array in an un-stretched state in accordance with a second embodiment of the present invention. The light-emitting array of the second embodiment has a structure similar to that illustrated in the first embodiment. Compared withFIG. 1A , a larger distance is formed between two adjacent light-emittingchips 41, and the length of thestretchable segment 232 is increased. -
FIG. 2B shows a top view of the light-emitting array of the second embodiment in a stretched state. Compared withFIG. 1A , since the length of thestretchable segment 232 is increased to be the un-stretched state, two adjacent light-emittingelements 40 can be separated by a longer distance (D6) in the X direction (for example, D6 is larger than D2 depicted inFIG. 1D ), in the Y direction, or in both direction after stretching.FIG. 2C shows a cross-sectional view taken along U-U′ line inFIG. 2A , andFIG. 2D shows a cross-sectional view taken along V-V′ line inFIG. 2A . As the same as shown inFIG. 1B andFIG. 1C , thetrenches substrate 11; but there is noscarified layer 24 formed between thesubstrate 11 and theconductive line 23. -
FIG. 3A shows a top view of a light-emitting array in an un-stretched state in accordance with a third embodiment of the present invention. The light-emitting array of the third embodiment has a structure similar to that illustrated in the first embodiment. In this embodiment, thestretchable segment 232 connected between two light-emittingchips 41 has a portion 2321 extending above another light-emittingchip 41 which is not physically connected to thestretchable segment 232. -
FIG. 3B shows a top view of a light-emitting array in an un-stretched state in accordance with a fourth embodiment of the present invention. The light-emitting array of the fourth embodiment has a structure similar to that illustrated in the second embodiment. The light-emittingchip 41 has a rectangular shape and four corners, and the pads of the light-emittingchip 41 are formed on the four corners respectively. The twofirst pads 301 are arranged on diagonal corners (a first corner and a second corner). Thesecond pad 302 is arranged to extend from a third corner to a fourth corner. In this embodiment, thesecond pad 302 is connected to theconductive lines 23 to provide electrical connection in a direction along the U-U′ line, and thefirst pads 301 are connected to theconductive lines 23 to provide electrical connection in a direction along the V-V′ line. - According to the embodiments shown in
FIGS. 3A-3B , theconductive line 23 can be formed in various shape for different application. In addition, the distance between two adjacent LED units can be modified by adopting proper conductive line. For example, the line part can be a zig-zag type, a repeated “S-shaped” type, or a spiral type, etc. As a result, the space between two adjacent pads of different light-emittingelements 40 is more effectively utilized to dispose the conductive wire therein.FIGS. 3C-3D show two embodiments in accordance with the present application.FIG. 3C is an enlarged view of two adjacent light-emittingelements 40 and theconductive line 23 between them. Theconductive line 23 is curved as a repeated “F-shaped” or repeated “7-shaped” as shown inFIG. 3C . Specifically, theconductive line 23 includes multiplestretchable segments 232,straight portions 233 between stretchable segments, and bendingportions 234. The repeated “F-shaped” or repeated “7-shaped” of theconductive line 23 is formed by a repeated sequence of a bendingportion 234, astraight portion 233, astretchable segments 232, astraight portion 233, and another bendingportion 234. Such that, theconductive line 23 includes multiple combinations of “bendingportions 234—straight portion 233—stretchable segments 232—straight portion 233—bendingportions 234” arranged to be perpendicular to each other. As a result, the space between two adjacent pads of different LED cells is more effectively utilized to dispose the conductive wire therein. In another embodiment, the combinations can be arranged alternately. Referring toFIG. 3D , theconductive line 23 is curved as a repeated “8-shape”. - In addition, the
conductive lines 23 are extended by external force, so the conductive wires should be strengthened to prevent broken caused by the external force.FIG. 3E is a top view of theconductive line 23 before being extended. In order to enhance the connecting strength between the connectingsegments 231 and thestretchable segment 232, the contact area of the connectingsegments 231 and the pad is increased. The width of the connectingsegment 231 is larger than the width of thestretchable segments 232. The pattern of the connectingsegment 231 can be a dot, a square, or a similar shape with the pads of a light-emitting chip, etc. As shown inFIG. 3E , thestretchable segments 232 of theconductive line 23 includes a first bending portion A and a second bending portion B. The curvature radius of the first bending portion A and the second bending portion B are represented as RA and RB, respectively. W is the width of thestretchable segments 232. The dotted line X-X′ is the direction along two connectingsegments 231. L is the distance between thevertex 235 of bending portion A and thevertex 236 of bending portion B on a projecting direction which is perpendicular to line X-X′, wherein L is larger than the sum of curvature radius RA and curvature radius RB. Besides, the ratio of W to L (i.e. W/L) is varied within a range of 0.1 and 0.4, such as 0.2, 0.15, 0.3 and 0.38. In another embodiment, the ratio (W/L) can be less than 0.1 or larger than 0.4 for different application and different material of the conductive line applied. In this embodiment, the value of W/L is limited within the range, and the LED array will not be difficult to extend and theconductive line 23 will not be cracked easily when external force applied. Referring toFIG. 3F , an embodiment of theconductive line 23 with a repeated regular S-shape is shown. The curvature radius of each vertex is substantially the same, and the vertical distance L between two vertexes on opposite site of theconductive line 23 substantially remains a constant. The value of W/L also satisfies the criteria described above. - However, though the ratio between the width W of
stretchable segments 232 and distance L between thevertex 235 of bending portion A and thevertex 236 is concerned, some modification is added for better reliability. Referring toFIG. 1A , the electrical connection between light-emittingchips 41 in X direction is provided by aconductive line 23 B1-Bn continuously extended in X direction. The electrical connection between light-emittingchips 41 in Y direction is provided byconductive lines 23 A1-An which are discontinuously extended in Y direction. In the embodiment shown inFIG. 1A , the connection strength in X direction is larger than the strength in Y direction because each of the area ofpad 231 connecting to thesecond pad 302 is larger than the area ofpad 231 connecting to thefirst pad 301. So, the area ofpad 231 connecting to thefirst pad 301 is expected to be large than the area ofpad 231 connecting to thesecond pad 302 for better connection strength in Y direction. In another embodiment, the area of thepad 231 connecting to thefirst pad 301 is 1-1.6 times the area of thepad 231 connecting to thesecond pad 302. -
FIG. 4A shows a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. The light-emitting array includes a plurality of light-emitting groups on asubstrate 11. Each of the light-emitting groups includes a red light-emittingchip 41R, a green light-emittingchip 41G, and a blue light-emittingchip 41B. The red light-emittingchip 41R has twofirst pads 301R and asecond pad 302R, and thesubstrate 11 includesscribing lines 110 between two of the light-emitting groups. One of thefirst pads 301R of the red light-emittingchip 41R is electrically connected to anotherfirst pad 301R of adjacent red light-emittingchip 41R by theconductive line 23R. Likewise, the green light-emittingchip 41G has twofirst pads 301G and asecond pad 302G. One of thefirst pads 301G of the green light-emittingchip 41G is electrically connected to anotherfirst pad 301G of an adjacent green light-emittingchip 41G by theconductive line 23G. The blue light-emittingchip 41B has twofirst pads 301B and asecond pad 302B. One of thefirst pads 301B of the blue light-emittingchip 41B is electrically connected to anotherfirst pad 301B of an adjacent blue light-emittingchip 41B by theconductive line 23B. Acommon pad 302C is formed on and to connect to thesecond pads conductive line 23C is formed to connect thecommon pad 302C of a light-emitting group with thecommon pad 302C of an adjacent light-emitting group. As described inFIG. 1A , by selectively connecting the conductive line (23R, 23G, 23B, 23C) with the external element. The specific light-emitting chip (41R, 41G, or 41B) can emit light. In this embodiment, the light-emitting chips (41R, 41G, and 41B) are epitaxially grown on thesubstrate 11. The red light-emittingchip 41R can be optionally formed by using a red phosphor on a blue or UV light-emitting chip to emit a red light with a wavelength of 610-650 nm; and the green light-emittingchip 41G can be optionally formed by using a green phosphor on a blue or UV light-emitting chip to emit a green light with a wavelength of 530-570 nm. The blue light-emittingchip 41B can be optionally formed by using a blue phosphor on a UV light-emitting chip to emit a blue light with a wavelength of 450-490 nm. Each of the light-emitting group can be used as a pixel in a display or a backlight in a display. In this embodiment, one light-emitting group has three red light-emittingchips 41R, three green light-emittingchips 41G, and three blue light-emittingchips 41B. In another embodiment, one light-emitting group includes one light-emitting chip or two light-emitting chips of different colors. -
FIG. 4B shows a top view of the light-emitting array of an embodiment in a stretched state.FIG. 4C shows a cross-sectional view of an embodiment shown inFIG. 4A . Before stretching, the light-emitting groups are separated from each other. The separated light-emitting groups are formed on thesubstrate 11. Thesubstrate 11 is separated into several pieces as common substrates. Referring toFIG. 4C , the light-emittingchips common substrate 101, and the light-emitting group on onecommon substrate 101 is connected to another light-emitting group on anothercommon substrate 101. -
FIG. 4D shows a top view of a light-emitting array in an un-stretched state in accordance with a further embodiment of the present invention.FIG. 4E shows a cross-sectional view of a light-emitting group in accordance with an embodiment of the present invention. The light-emitting array of the sixth embodiment has a structure similar to that illustrating inFIG. 4A . Referring toFIG. 4D , thecommon pad 302C is formed on the light-emitting group. Referring toFIG. 4E , thecommon pad 302C is directly formed on the semiconductor layers 313 of the light-emittingchips FIG. 4C , thesecond pads chips common pad 302C. -
FIG. 5A shows a top view in an un-stretched state in accordance with an embodiment of the present invention. There are three light-emitting arrays including a red light-emitting array, a green light-emitting array, and a blue light-emitting array. Each light-emitting array can have a structure as shown inFIG. 1A , 2A, or 3A. Specifically, the red light-emitting array includes a plurality of red light-emittingelements 40R, the green light-emitting array includes a plurality of the green light-emittingelements 40G, and the blue light-emitting array includes a plurality of the blue light-emittingelements 40B. Two adjacent red light-emittingelements 40R are electrically connected to each other by theconductive line 23R, two adjacent green light-emittingelements 40G are electrically connected to each other by theconductive line 23G, and two adjacent blue light-emittingelements 40B are electrically connected to each other by theconductive line 23B. The three light-emitting arrays are spatially arranged such that theconductive lines elements FIG. 5C ). In addition, the three light-emitting arrays are alternately arranged such that, in a top view, the light-emittingelements -
FIG. 5B shows a cross-sectional view along the line A-A′ inFIG. 5A . The red light-emittingelement 40R can have an active layer made of AlxInyGa(1−x−y)P, wherein 0≦x, y≦1; (x+y)≦1, to emit a red light with a wavelength of 610-650 nm; the green light-emittingelement 40G can have an active layer made of AlxInyGa(1−x−y)N, wherein 0≦x, y≦1; (x+y)≦1, to emit a green light with a wavelength of 530-570 nm; and the blue light-emittingelement 40B can have an active layer made of AlxInyGa(1−x−y)N, wherein 0≦x, y≦1; (x+y)≦1, to emit a blue light with a wavelength of 450-490 nm. Moreover, a frame (not shown) is provided to interpose between any two of the light-emitting elements to avoid a light absorption or cross talk therebetween.FIG. 5C shows a cross-sectional view taken along the line B-B′ inFIG. 5A . The light-emittingelements element 40B is arranged at an elevation higher than the light-emittingelement 40G, and the light-emittingelement 40G is arranged at an elevation higher than the light-emittingelement 40R. - In addition, a control element can be added to the embodiment shown in
FIG. 5A to control each of the light-emitting elements.FIGS. 5D-5H show an embodiment of a control element in accordance with present application. Referring toFIG. 5D , a control element 23CR is connected to theconductive lines 23R, and acontrol line 33R is connected to the control element 23CR. The light-emittingelement 40R is designed to be electrically powered by theconductive lines 23R shownFIG. 5A . Then, the control element 23CR, such as a transistor, is added to control the light-emittingelement 40R shown inFIG. 5D . In this embodiment, thecontrol line 33R is served as the gate of the control element 23CR and theconductive line 23R is served as the drain and source of thecontrol element 23R. The control element 23CR is turned on while a control signal is provided to thecontrol element 23R through thecontrol line 33R. Thus, thecontrol line 33R is controlled to be at a high level, and the current from thepad 301R is transmitted to the light-emittingelement 40R through theconductive line 23R.FIGS. 5E-5H show the top views and cross-sectional views of the process of manufacturing the control element 23CR in accordance with an embodiment of the present invention. Referring toFIG. 5E , aconductive line 33, which can be connected to thecontrol line 33R shown inFIG. 5D , is formed on thesubstrate 11. In another embodiment, theconductive line 33 and thecontrol line 33R can be formed at once. Referring toFIG. 5F , adielectric layer 330 is provided on theconductive line 33 to cover the top surface and the sidewalls of theconductive line 33. Referring toFIGS. 5G-5H , theactive layers 33A with a doped semiconductor layer is formed on thedielectric layer 330 to be connected to theconductive line 23R. Theactive layer 33A includes one or more doped layers of the same or different conductive types. Moreover, the doping concentrations of the doped layers can be the same or different. A similar structure of a control element 23CR can also be applied to control other light-emitting elements, such as light-emittingelements 40G and light-emittingelements 40B. Besides, the control element 23CR can be formed to connect theconductive line 23R along the line A-A′ or formed along the line B-B′. One control element can be used to control one light-emitting element with a control signal provided through a control line as shown in previous embodiment. In anther embodiment, one control element can be used to control two or more light-emitting elements by providing one or more control signals. With the adoption of the control elements, the light-emitting array can be used as a display to show required pictures or images. -
FIG. 6A shows a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. The light-emitting array includes a plurality of light-emittingunits 30. Each of the light-emittingunits 30 has a light-emittingelement 40. The structure of the light-emittingunit 30 is described below. The electrical connection between the light-emittingunits 30 can be derived from the aforementioned teaching and therefore is omitted herein for brevity. -
FIG. 6B shows a top view of a light-emitting array in an un-stretched state in accordance with an embodiment of the present invention. The light-emitting array is a 1-dimension array and includes a plurality of light-emittingunits 30. Each of the light-emittingunits 30 has a light-emittingelement 40. The light-emittingelement 40 has afirst pad 301 and asecond pad 302. Thefirst pad 301 of one of the light-emittingelements 40 is connected to thesecond pad 302 of adjacent one of the light-emittingelement 40 by theconductive line 23 such that the light-emittingelements 40 or the light-emittingunits 30 are electrically connected to each other in series. The structure of the light-emittingunit 30 is described below. A detail of theconductive line 23 can be derived from the aforementioned teaching and therefore is omitted herein for brevity. The structure shown inFIGS. 5D-5H can be applied to embodiments shown inFIGS. 6A-6B . That is, the control element 23CR can be used to control light-emittingunits 30 in the 2-dimensional light-emitting array as shown inFIG. 6A or in the 1-dimensional light-emitting array shown inFIG. 6B . -
FIGS. 7A-7G illustrate steps of making the light-emitting array related to the first embodiment of the application. It is noted thatFIGS. 7A-7G illustrate steps of making theconductive line 23 along the V-V′ line, but theconductive line 23 along the U-U′ line can be formed by the same making steps. As shown inFIG. 7A , a plurality of spaced-apart light-emittingchips 41 are located on asubstrate 11. Thesubstrate 11 is situated on atemporary substrate 12. Eachsecond pad 302 of the light-emittingchips 41 is exposed. Aseed layer 21 is fully formed on the light-emittingchips 41 and thesubstrate 11. Arecess region 211 of theseed layer 21 locates at a position between two adjacent light-emittingchips 41. In this embodiment, theseed layer 21 is not fully filled in a space between two adjacent light-emittingchips 41 and therefore air may exist in the space. Atrench 111 is formed on thesubstrate 11 at a position substantially corresponding to therecess region 211. - As shown in
FIG. 7B , a patternedlayer 22, such as a photoresistor layer, is formed on theseed layer 21 to expose theseed layer 21 at a position corresponding to thesecond pads 302 and to expose theseed layer 21 at portions corresponding to therecess region 211. As shown inFIG. 7C , aconductive line 23 is formed on the exposedseed layer 21 which is not covered by the patternedlayer 22. Theconductive line 23 has a connectingsegment 231 formed on thesecond pad 302 of one light-emittingchip 41, another connectingsegment 231 formed on thesecond pad 302 of adjacent one light-emittingchip 41, and astretchable segment 232 located between the adjacent connectingsegments 231. As shown inFIGS. 7D-7E , the patternedlayer 22 and theseed layer 21 are sequentially removed. The area of theseed layer 21 below the connectingsegment 231 is larger than that below thestretchable segment 232. The portion of theseed layer 21 below thestretchable segment 232 can be totally removed. The portion of theseed layer 21 below the connectingsegment 231 is not fully removed and part of the portion below the connectingsegment 231 is preserved. Therefore, thefirst segment 231 and thesecond segment 233 are still connected to the light-emittingchips 41, and thestretchable segment 232 is suspended. - As shown in
FIG. 7F , thetemporary substrate 12 is removed and thesubstrate 11 is divided along thetrench 111 to form a plurality of light-emittingelements 40. Then, the plurality of light-emittingelements 40 is stretched as shown inFIG. 1D andFIG. 7G . A force is applied to stretch thestretchable segment 232 and to enlarge a space between the light-emittingelements 40. -
FIGS. 8A-8G show the manufacturing steps related to the embodiment shown inFIG. 6B , but the light-emittingunits 30 are spaced apart from each other and are not arranged to abut against each other. As shown inFIG. 8A , a plurality of spaced-apart light-emittingunits 30 are formed on atemporary substrate 12. Thefirst pad 301 and thesecond pad 302 in each light-emittingunit 30 are exposed. Aseed layer 21 is fully formed on the light-emittingunits 30 and thetemporary substrate 12. Theseed layer 21 is located at a position between two adjacent light-emittingunits 30 and has arecess region 211. In addition, theseed layer 21 cannot be fully filled in a space between two adjacent light-emittingunits 30, and air may exist in the space. As shown inFIG. 8B , a patternedlayer 22, such as a photoresistor layer, is formed on theseed layer 21 to expose theseed layer 21 at a position corresponding to thefirst pad 301 and thesecond pad 302, and to expose theseed layer 21 at portions corresponding to therecess region 211. - As shown in
FIG. 8C , aconductive line 23 is formed on the exposedseed layer 21 which is not covered by the patternedlayer 22. Theconductive line 23 has a connectingsegment 231 formed on thefirst pad 301 of one light-emitting chip, a connectingsegment 233 formed on thesecond pad 302 of adjacent one light-emitting chip, and astretchable segment 232 extended between thefirst segment 231 and thesecond segment 233. - As shown in
FIG. 8D-8E , the patternedlayer 22 and theseed layer 21 are removed. The area of theseed layer 21 below the connectingsegment 231 is larger than that below thestretchable segment 232. The portion of theseed layer 21 below thestretchable segment 232 can be totally removed, and the portion of theseed layer 21 below the connectingsegment 231 are not fully removed and part of the portion below the connectingsegment 231 is preserved. Therefore, the connectingsegments 231 and thestretchable segment 232 are still connected to the light-emittingunits 30, and thestretchable segment 232 is suspended. - As shown in
FIGS. 8F-8G , thetemporary substrate 12 is removed, and a force is applied to stretch thestretchable segment 232 of theconductive line 23 and to enlarge a space between the light-emittingunits 30. The process inFIGS. 7A-7G orFIGS. 8A-8G can be applied to aforementioned embodiments. - It is noted that the light-emitting element in the aforementioned embodiments have the
first pad 301 and thesecond pad 302 on the same side of the substrate which is defined herein as a horizontal-type light-emitting element. However, a vertical-type light-emitting element can be used. The vertical-type light-emitting element is defined herein that thefirst pad 301 and thesecond pad 302 are formed on the opposite sides of the substrate.FIG. 9A shows a cross-sectional view in accordance with an embodiment of the present invention where the vertical-type light-emitting element is illustrated. Each of the light-emittingelements 40 has a light-emitting stack which includes a first-type semiconductor layer 311, anactive layer 312, and a second-type semiconductor layer 313. Thefirst pad 301 is formed on the conductive substrate 102 (SiC, GaN, GaAs, TiW, or Cu). Thesecond pad 302 is formed on the second-type semiconductor layer 313. Aconductive line 23 is provided to electrically connect thefirst pads 301 of the light-emittingelements 40. Anotherconductive line 23 is provided to electrically connect thesecond pads 302 of the light-emittingelements 40 with each other. The twoconductive lines 23 are formed on opposite sides of theconductive substrate 102. The structure shown inFIGS. 5D-5H can be applied to embodiments shown inFIG. 9A . That is, the structure with a control element and control line(s) can be used to control horizontal-type light-emitting element or vertical-type light-emitting element. Specifically, the control element can be connected to theconductive line 23 which is directly connected to thefirst pads 301 or theconductive line 23 which is directly connected to thesecond pads 302. The control lines can be formed on a side same as the control element or on a side opposite to the light-emitting stack inFIG. 9A . - The process of manufacturing the structures shown in
FIG. 9A is illustrated inFIGS. 9B-9E . Referring toFIGS. 9B-9C , a light-emitting stack including a first-type semiconductor layer 311, anactive layer 312, and a second-type semiconductor layer 313 is provided with afirst pads 301 and asecond pads 302 which are respectively connected to the first-type semiconductor layer 311 and the second-type semiconductor layer 313; and aconductive line 23 is provided on a temporary substrate. Referring toFIGS. 9D-9E , twoconductive lines 23 are attached to thefirst pad 301 and thesecond pad 302 of the light-emitting stack, and the temporary substrate is then removed to form a structure as shown inFIG. 9A . -
FIGS. 10A-10F show a structure of the light-emittingunit 30 in accordance with the present invention. Referring toFIG. 10A , the light-emittingunit 30 includes a firsttransparent structure 52 enclosing the light-emittingelement 40, a secondtransparent structure 51 formed on the firsttransparent structure 52. Areflective layer 53 is formed on the firsttransparent structure 52 opposite to the secondtransparent structure 51 and has afirst portion 531 and asecond portion 532 between thefirst pad 301 and thesecond pad 302. In this embodiment, thefirst portion 531 has a curved shape and a profile with a height gradually increasing from the light-emittingelement 40 to an edge, away from the light-emittingelement 40, of the firsttransparent structure 52. Besides, thesecond portion 532 also has a curved shape and a profile with a central region bulging away from the light-emittingelement 40. A firstenlarged pad 541 is formed on thefirst portion 531 and electrically connected to thefirst pad 301. A secondenlarged pad 542 is formed on thefirst portion 531 and electrically connected to thesecond pad 302. In this embodiment, the first enlarged pad 541 (or the second enlarged pad 542) has acurve sidewall 5411. - As shown in
FIG. 10B , the light-emittingunit 30 has a structure similar to that shown inFIG. 10A , except that aphosphor layer 55 is provided within the firsttransparent structure 52. - As shown in
FIG. 10C , the light-emittingunit 30 has a structure similar to that shown inFIG. 10A , except that the secondtransparent structure 51 has a slantedsidewall 511. - As shown in
FIG. 10D , the light-emittingunit 30 has a structure similar to that inFIG. 10C , except that aphosphor layer 55 is provided within the firsttransparent structure 52. - As shown in
FIG. 10E , the light-emittingunit 30 has a structure similar to that inFIG. 10A , except that the firsttransparent structure 52 extends beyond the secondtransparent structure 51 and has anarc 521 close to the secondtransparent structure 51. - As shown in
FIG. 10F , the light-emittingunit 30 has a structure similar to that inFIG. 10E , except that aphosphor layer 55 is provided within the firsttransparent structure 52. -
FIGS. 11A-11F show a structure of the light-emittingunit 30 in accordance with the present invention.FIGS. 11A-11F respectively show a structure similar with those inFIGS. 10A-10F , except that the light-emittingunit 30 in these embodiments does not have the reflective layer and the enlarged pad. -
FIGS. 12A-12G show a structure of the light-emittingunit 30 in accordance with the present invention.FIGS. 12A and 12B have a structure similar to those shown inFIGS. 10E and 10F , except that areflective structure 56, for example a DBR structure, is formed between the firsttransparent structure 52 and the secondtransparent structure 51.FIGS. 12C and 12D have a structure similar to those inFIGS. 10A and 10B , except that the light-emittingunit 30 is devoid of the secondtransparent structure 51 formed on the firsttransparent structure 52.FIGS. 12 E and 12F have a structure similar to those inFIGS. 12C and 12D , except that the light-emittingunit 30 does not have thereflective layer 53 and theenlarged pad FIG. 12G has a structure similar to that inFIG. 12F , except that thephosphor 55 is conformably formed on the light-emittingelement 40. -
FIGS. 13A and 13B show a structure of the light-emittingunit 30 in accordance with the present invention. As shown inFIG. 13A , aphosphor structure 57 encloses the light-emittingelement 40.FIG. 13B has a structure similar to that inFIG. 13A , except that thereflective layer 53 and theenlarged pad - It will be apparent to those having ordinary skill in the art that various modifications and variations can be made to the devices in accordance with the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure covers modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.
Claims (8)
1. An light-emitting array, comprising:
a first light-emitting chip;
a second light-emitting chip; and
a conductive line electrically connecting to the first light-emitting chip and the second light-emitting chip,
wherein the conductive line comprises a first segment and a second segment having a radius curvature different from that of the first portion.
2. The light-emitting array of claim 1 , wherein the first light-emitting chip comprises a first pad, two second pads, a rectangular shape and four corners.
3. The light-emitting array of claim 2 , wherein two of the corners are located in a diagonal line, and the two second pads are formed on the diagonal corners.
4. The light-emitting array of claim 3 , wherein the first pad extends between two of the corners and in a direction passing through the diagonal line.
5. The light-emitting array of claim 1 , wherein the conductive line comprises a first portion connecting on the second light-emitting chip and a second portion connecting the first portion, and the first portion has a width more large than the second portion has.
6. The light-emitting array of claim 1 , wherein the conductive line comprises a stretchable segments having a width W, and a first vertex and a vertex arranged in a distance L, and a ratio between the width W and the distance L is between 0.1˜0.4.
7. The light-emitting array of claim 1 , further comprising:
a first conductive line connecting to a first pad of the first light-emitting chip; and
a second conductive line connecting to a second pad of the first light-emitting chip, wherein an area of the first conductive line connecting to the first pad is larger than that of the second conductive line connecting to the second pad.
8. The light-emitting array of claim 1 , wherein the conductive line comprises a connection portion not directly connecting to the first light-emitting chip, and a ratio between a width of the connection portion and a width of the first light-emitting chip is between 2 to 10.
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160111604A1 (en) * | 2014-10-20 | 2016-04-21 | PlayNitride Inc. | Method for expanding spacings in light-emitting element array and light-emitting element array unit |
US20180114947A1 (en) * | 2015-01-15 | 2018-04-26 | Samsung Display Co., Ltd. | Stretchable display device |
WO2018075292A1 (en) * | 2016-10-17 | 2018-04-26 | Apple Inc. | Electronic devices with soft input-output components |
US10026721B2 (en) | 2015-06-30 | 2018-07-17 | Apple Inc. | Electronic devices with soft input-output components |
WO2019079218A1 (en) * | 2017-10-16 | 2019-04-25 | Wintergreen Corporation | Expandable net light for decorative illumination |
US10380930B2 (en) | 2015-08-24 | 2019-08-13 | X-Celeprint Limited | Heterogeneous light emitter display system |
US10451257B2 (en) | 2015-12-09 | 2019-10-22 | X-Celeprint Limited | Micro-light-emitting diode backlight system |
US10468391B2 (en) * | 2017-02-08 | 2019-11-05 | X-Celeprint Limited | Inorganic light-emitting-diode displays with multi-ILED pixels |
US10522719B2 (en) | 2016-04-05 | 2019-12-31 | X-Celeprint Limited | Color-filter device |
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US10692844B2 (en) | 2016-04-05 | 2020-06-23 | X Display Company Technology Limited | Micro-transfer printed LED and color filter structures |
US10833225B2 (en) | 2014-06-18 | 2020-11-10 | X Display Company Technology Limited | Micro assembled LED displays and lighting elements |
US10930623B2 (en) | 2016-03-03 | 2021-02-23 | X Display Company Technology Limited | Micro-transfer printable electronic component |
US10943946B2 (en) | 2017-07-21 | 2021-03-09 | X Display Company Technology Limited | iLED displays with substrate holes |
WO2021161632A1 (en) * | 2020-02-10 | 2021-08-19 | 株式会社ジャパンディスプレイ | Display device |
CN113782559A (en) * | 2021-09-14 | 2021-12-10 | 业成科技(成都)有限公司 | Conductive module and display device |
US11289652B2 (en) | 2015-09-29 | 2022-03-29 | X Display Company Technology Limited | OLEDs for micro transfer printing |
US11527689B2 (en) * | 2018-02-23 | 2022-12-13 | Osram Oled Gmbh | Optoelectronic assembly, method and molded part |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US20030107053A1 (en) * | 2000-03-31 | 2003-06-12 | Toshiya Uemura | Group-III nitride compound semiconductor device |
US20060192223A1 (en) * | 2005-02-28 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
US20090039376A1 (en) * | 2004-08-06 | 2009-02-12 | Matsushita Electric Industrial Co., Ltd. | Light source, manufacturing method of light source, lighting apparatus, and display apparatus |
US20110089442A1 (en) * | 2009-10-20 | 2011-04-21 | Chang-Huei Jing | Optoelectronic device |
US20120126276A1 (en) * | 2009-08-06 | 2012-05-24 | Atsuhiro Hori | Light emitting element and light emitting device |
US20120175665A1 (en) * | 2011-01-07 | 2012-07-12 | Samsung Led Co., Ltd. | Light-emitting device package and method of manufacturing the same |
US20130264591A1 (en) * | 2011-02-16 | 2013-10-10 | Cree, Inc. | Light emitting diodes (leds), devices, and methods for providing failure mitigation in led arrays |
US20140070235A1 (en) * | 2012-09-07 | 2014-03-13 | Peter Scott Andrews | Wire bonds and light emitter devices and related methods |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69433926T2 (en) * | 1993-04-28 | 2005-07-21 | Nichia Corp., Anan | A semiconductor device of a gallium nitride III-V semiconductor compound |
US6743982B2 (en) * | 2000-11-29 | 2004-06-01 | Xerox Corporation | Stretchable interconnects using stress gradient films |
CN1217425C (en) * | 2001-07-12 | 2005-08-31 | 日亚化学工业株式会社 | Semiconductor device |
TW201318147A (en) * | 2011-10-26 | 2013-05-01 | Phostek Inc | A light emitting diode array |
US10497633B2 (en) * | 2013-02-06 | 2019-12-03 | The Board Of Trustees Of The University Of Illinois | Stretchable electronic systems with fluid containment |
-
2015
- 2015-03-13 US US14/657,714 patent/US20150263256A1/en not_active Abandoned
-
2017
- 2017-07-18 US US15/652,987 patent/US10326065B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US20030107053A1 (en) * | 2000-03-31 | 2003-06-12 | Toshiya Uemura | Group-III nitride compound semiconductor device |
US20090039376A1 (en) * | 2004-08-06 | 2009-02-12 | Matsushita Electric Industrial Co., Ltd. | Light source, manufacturing method of light source, lighting apparatus, and display apparatus |
US20060192223A1 (en) * | 2005-02-28 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
US20120126276A1 (en) * | 2009-08-06 | 2012-05-24 | Atsuhiro Hori | Light emitting element and light emitting device |
US20110089442A1 (en) * | 2009-10-20 | 2011-04-21 | Chang-Huei Jing | Optoelectronic device |
US20120175665A1 (en) * | 2011-01-07 | 2012-07-12 | Samsung Led Co., Ltd. | Light-emitting device package and method of manufacturing the same |
US20130264591A1 (en) * | 2011-02-16 | 2013-10-10 | Cree, Inc. | Light emitting diodes (leds), devices, and methods for providing failure mitigation in led arrays |
US20140070235A1 (en) * | 2012-09-07 | 2014-03-13 | Peter Scott Andrews | Wire bonds and light emitter devices and related methods |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
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US10833225B2 (en) | 2014-06-18 | 2020-11-10 | X Display Company Technology Limited | Micro assembled LED displays and lighting elements |
US20160111604A1 (en) * | 2014-10-20 | 2016-04-21 | PlayNitride Inc. | Method for expanding spacings in light-emitting element array and light-emitting element array unit |
US20180240941A1 (en) * | 2014-10-20 | 2018-08-23 | PlayNitride Inc. | Method for expanding spacings in light-emitting element array |
US10290622B2 (en) * | 2014-10-20 | 2019-05-14 | PlayNitride Inc. | Method for expanding spacings in light-emitting element array |
US20180114947A1 (en) * | 2015-01-15 | 2018-04-26 | Samsung Display Co., Ltd. | Stretchable display device |
US11469401B2 (en) * | 2015-01-15 | 2022-10-11 | Samsung Display Co., Ltd. | Stretchable display device |
US10026721B2 (en) | 2015-06-30 | 2018-07-17 | Apple Inc. | Electronic devices with soft input-output components |
US10380930B2 (en) | 2015-08-24 | 2019-08-13 | X-Celeprint Limited | Heterogeneous light emitter display system |
US11289652B2 (en) | 2015-09-29 | 2022-03-29 | X Display Company Technology Limited | OLEDs for micro transfer printing |
US10451257B2 (en) | 2015-12-09 | 2019-10-22 | X-Celeprint Limited | Micro-light-emitting diode backlight system |
US10930623B2 (en) | 2016-03-03 | 2021-02-23 | X Display Company Technology Limited | Micro-transfer printable electronic component |
US10522719B2 (en) | 2016-04-05 | 2019-12-31 | X-Celeprint Limited | Color-filter device |
US10692844B2 (en) | 2016-04-05 | 2020-06-23 | X Display Company Technology Limited | Micro-transfer printed LED and color filter structures |
WO2018075292A1 (en) * | 2016-10-17 | 2018-04-26 | Apple Inc. | Electronic devices with soft input-output components |
US10468391B2 (en) * | 2017-02-08 | 2019-11-05 | X-Celeprint Limited | Inorganic light-emitting-diode displays with multi-ILED pixels |
US10943946B2 (en) | 2017-07-21 | 2021-03-09 | X Display Company Technology Limited | iLED displays with substrate holes |
US10648629B2 (en) | 2017-10-16 | 2020-05-12 | Wintergreen Corporation | Expandable net light for decorative illumination |
WO2019079218A1 (en) * | 2017-10-16 | 2019-04-25 | Wintergreen Corporation | Expandable net light for decorative illumination |
US11527689B2 (en) * | 2018-02-23 | 2022-12-13 | Osram Oled Gmbh | Optoelectronic assembly, method and molded part |
JP2021128186A (en) * | 2020-02-10 | 2021-09-02 | 株式会社ジャパンディスプレイ | Display device |
WO2021161632A1 (en) * | 2020-02-10 | 2021-08-19 | 株式会社ジャパンディスプレイ | Display device |
JP7366787B2 (en) | 2020-02-10 | 2023-10-23 | 株式会社ジャパンディスプレイ | display device |
CN111243442A (en) * | 2020-03-13 | 2020-06-05 | 京东方科技集团股份有限公司 | Display panel and curved surface display device |
US11957040B2 (en) | 2020-03-13 | 2024-04-09 | Boe Technology Group Co., Ltd. | Display panel and curved display device |
CN113782559A (en) * | 2021-09-14 | 2021-12-10 | 业成科技(成都)有限公司 | Conductive module and display device |
US20230083312A1 (en) * | 2021-09-14 | 2023-03-16 | Interface Technology (Chengdu) Co., Ltd. | Conductive module and display device |
US11625078B2 (en) * | 2021-09-14 | 2023-04-11 | Interface Technology (ChengDu) Co, Ltd. | Conductive module and display device |
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US20170317255A1 (en) | 2017-11-02 |
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