US20150287882A1 - Nitride semiconductor light-emitting diode - Google Patents
Nitride semiconductor light-emitting diode Download PDFInfo
- Publication number
- US20150287882A1 US20150287882A1 US14/493,481 US201414493481A US2015287882A1 US 20150287882 A1 US20150287882 A1 US 20150287882A1 US 201414493481 A US201414493481 A US 201414493481A US 2015287882 A1 US2015287882 A1 US 2015287882A1
- Authority
- US
- United States
- Prior art keywords
- degrees
- angle degree
- nitride semiconductor
- group
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 238000000605 extraction Methods 0.000 description 58
- 238000004088 simulation Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Definitions
- the present invention relates to a nitride semiconductor light-emitting diode.
- Japanese Patent Application laid-open Publication No. 2012-023249A discloses a nitride semiconductor light-emitting diode.
- FIG. 13 shows a nitride semiconductor light-emitting diode disclosed in FIG. 3G included in Japanese Patent Application laid-open Publication No. 2012-023249A.
- Japanese Patent Application laid-open Publication No. 2012-023249A discloses in the paragraph
- a nitride semiconductor light-emitting diode having a shape of a scalene triangle in a top view has higher light extraction efficiency than a nitride semiconductor light-emitting diode having a shape of a regular triangle.
- Japanese Patent Application laid-open Publication No. 2012-023249A discloses in the paragraph [0200] that the light extraction efficiency of the scalene triangle nitride semiconductor light-emitting diode shown in FIG. 13 is 1.4 times as high as that of a regular triangle nitride semiconductor light-emitting diode.
- Japanese Patent Application laid-open Publication No. 2012-023249A discloses in the paragraph [0466] that it is most desirable that a nitride substrate included in the nitride semiconductor light-emitting diode has a (1-100) plane.
- the present invention provides a nitride semiconductor light-emitting diode comprising:
- the active layer is interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer;
- the p-type nitride semiconductor layer and the n-type nitride semiconductor layer are electrically connected to the p-side electrode and the n-side electrode, respectively:
- the nitride semiconductor light-emitting diode has a shape of a triangle composed of Side BC, Side CA, and Side AB having a length of La, a length of Lb, and a length of Lc, respectively, in a top view of the nitride semiconductor light-emitting diode;
- angles opposite to Side BC, Side CA, and Side AB have Angle degree ⁇ , Angle degree ⁇ , and Angle degree ⁇ , respectively, in the triangle;
- Angle degree ⁇ is formed between a c-axis and a longitudinal direction of Side BC in the top view
- the length Lb is equal to the length Lc
- Group Aa 20 degrees ⁇ Angle degree ⁇ 40 degrees (Ia) and 0 degrees ⁇ Angle degree ⁇ 40 degrees (IIa)
- the present invention provides another nitride semiconductor light-emitting diode comprising:
- the active layer is interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer;
- the p-type nitride semiconductor layer and the n-type nitride semiconductor layer are electrically connected to the p-side electrode and the n-side electrode, respectively;
- the nitride semiconductor light-emitting diode has a shape of a triangle composed of Side BC, Side CA, and Side AB having a length of La, a length of Lb, and a length of Lc, respectively, in a top view of the nitride semiconductor light-emitting diode;
- angles opposite to Side BC, Side CA, and Side AB have Angle degree ⁇ , Angle degree ⁇ , and Angle degree ⁇ , respectively, in the triangle;
- Angle degree ⁇ is formed between a c-axis and a longitudinal direction of Side BC in the top view;
- Angle degree ⁇ is equal to 90 degrees
- Group Ba consisting of the following two mathematical formulae (IIIa) and (IVa)
- Group Bb consisting of the following two mathematical formulae (IIIb) and (IVb)
- Group Bc consisting of the following two mathematical formulae (IIIc) and (IVc) is satisfied.
- Group Ba 10 degrees ⁇ Angle degree ⁇ 30 degrees (IIIa) and ⁇ 30 degrees ⁇ Angle degree ⁇ 45 degrees (IVa)
- Group Bb 30 degrees ⁇ Angle degree ⁇ 35 degrees (IIIb) and ⁇ 25 degrees ⁇ Angle degree ⁇ 45 degrees (IVb)
- Group Bc 35 degrees ⁇ Angle degree ⁇ 40 degrees (IIIc) and 10 degrees ⁇ Angle degree ⁇ 45 degrees (IVc)
- the present invention provides still another nitride semiconductor light-emitting diode comprising:
- the active layer is interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer;
- the p-type nitride semiconductor layer and the n-type nitride semiconductor layer are electrically connected to the p-side electrode and the n-side electrode, respectively;
- the nitride semiconductor light-emitting diode has a shape of a triangle composed of Side BC, Side CA, and Side AB having a length of La, a length of Lb, and a length of Lc, respectively, in a top view of the nitride semiconductor light-emitting diode;
- angles opposite to Side BC, Side CA, and Side AB have Angle degree ⁇ , Angle degree ⁇ , and Angle degree ⁇ , respectively, in the triangle; Angle degree ⁇ is formed between a c-axis and a longitudinal direction of Side BC in the top view;
- Group Ca consisting of the following three mathematical formulae (VIIa), (VIIIa), and (IXa)
- Group Cb consisting of the following three mathematical formulae (VIIb), (VIIIb), and (IXb
- Group Cc consisting of the following three mathematical formulae (VIIc), (VIIIc), and (IXc)
- Group Cd consisting of the following three mathematical formulae (VIId), (VIIId), and (IXd
- the present invention provides a specific shape of a nitride semiconductor light-emitting diode having high light extraction efficiency.
- FIG. 1 shows a cross-sectional view of a nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 1;
- FIG. 2 shows a top view of the nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 1;
- FIG. 3 shows a result of the simulation of the anisotropic light extraction efficiency in the example 1
- FIG. 4 shows a result of the isotropic light extraction efficiency
- FIG. 5 is a graph showing the results of the simulation of the light extraction efficiency in the example 1;
- FIG. 6 shows a top view of a nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 2;
- FIG. 7 shows a result of the simulation of the anisotropic light extraction efficiency in the example 2.
- FIG. 8 is a graph showing the results of the simulation of the light extraction efficiency in the example 2.
- FIG. 9 shows a top view of a nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 3;
- FIG. 10 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3.
- FIG, 11 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3.
- FIG. 12 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3.
- FIG. 13 shows a nitride semiconductor light-emitting diode disclosed in FIG. 3G included in Japanese Parent Application laid-open Publication No. 2012-023249A.
- scalene triangle means a triangle having three sides having different lengths from one another and three angles having different degrees from one another.
- anisotropic orientation distribution means distribution of light emitted from a non-polar or semi-polar active layer. Generally, it means distribution of light emitted from an active layer having a principal plane of an m-plane. Light emitted from the active layer having a principal plane of an m-plane has a high light intensity along a c-axis; however, has a low light intensity along an a-axis.
- isotropic orientation distribution means distribution of light emitted from a polar active layer, namely, an active layer having a principal plane of a c-axis.
- the a-axis intensity of light emitted from the active layer having a principal plane of a c-plane is substantially the same as the m-axis intensity of the light.
- FIG. 1 shows a cross-sectional view of a nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 1.
- a nitride semiconductor light-emitting diode 100 comprised a non-polar or semi-polar p-type nitride semiconductor layer 102 , a non-polar or semi-polar active layer 104 , a non-polar or semi-polar n-type nitride semiconductor layer 106 , a p-side electrode 108 , and an n-side electrode 110 .
- the active layer 104 was interposed between the p-type nitride semiconductor layer 102 and the n-type nitride semiconductor layer 106 .
- An m-plane namely, a (1-100) plane, was selected as a non-polar plane in the simulation according to the example 1.
- the n-type nitride semiconductor layer 106 functioned as a substrate of the nitride semiconductor light-emitting diode 100 .
- the active layer 104 and the p-type nitride semiconductor layer 102 were provided under the n-type nitride semiconductor layer 106 .
- An uneven structure 120 was provided on the upper surface of the n-type nitride semiconductor layer 106 .
- the p-type nitride semiconductor layer 102 and the n-type nitride semiconductor layer 106 were electrically connected to the p-side electrode 108 and the n-side electrode 110 , respectively. In the simulation, a voltage was applied between the p-side electrode 108 and the n-side electrode 110 to emit light from the active layer 104 .
- the nitride semiconductor light-emitting diode 100 was disposed on a mounting board 150 .
- the mounting board 150 comprised a first electrode 152 p and a second electrode 152 n on the surface thereof.
- the first electrode 152 p and the second electrode 152 n were electrically connected to the p-side electrode 108 and the n-side electrode 110 , respectively.
- the nitride semiconductor light-emitting diode 100 had a shape of a square having four sides each having a length of 600 micrometers in a top view.
- the nitride semiconductor light-emitting diode 100 had a thickness of 100 micrometers.
- the nitride semiconductor light-emitting diode 100 may be coated with resin to give a nitride semiconductor light-emitting diode chip (hereinafter, merely referred to as a “chip”).
- the chip comprises the nitride semiconductor light-emitting diode 100 and the resin coating it.
- the light emitted from such a chip was simulated with a simulator utilizing a ray tracing method.
- the number of the rays in the ray tracing method was 100,000. This number was adequate for the calculation of the light extraction efficiency.
- FIG. 2 shows a top view of the nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 1. Needless to say, this top view corresponds to the drawing viewed from the normal line of the active layer 104 . As shown in FIG. 2 , the nitride semiconductor light-emitting diode 100 according to the example 1 has a shape of an isosceles triangle having three corners A, B, and C in the top view.
- the nitride semiconductor light-emitting diode 100 had a triangular shape consisting of Side BC, Side CA, and Side AB having a length La, a length Lb, and a length Lc, respectively, in the top view.
- angles opposite to Side BC, Side CA, and Side AB had Angle degree ⁇ , Angle degree ⁇ and Angle degree ⁇ , respectively.
- the length Lb was equal to the length Lc.
- FIG, 3 shows a result of the simulation of the anisotropic light extraction efficiency in the example 1.
- Angle degree ⁇ was fixed to be equal to 20 degrees.
- the light extraction efficiency was simulated, while Angle degree ⁇ of the light source was varied from zero degrees to 90 degrees.
- the horizontal axis represents Angle degree ⁇ of the light source
- the vertical axis represents normalized light extraction efficiency.
- the normalized light extraction efficiency was obtained by dividing a value of the light extraction efficiency simulated at Angle degree ⁇ by the smallest value of the light extraction efficiency.
- the smallest value of the light extraction efficiency means the smallest value among various values of the light extraction efficiency obtained while Angle degree ⁇ of the light source was varied from zero degrees to 90 degrees.
- FIG. 4 shows a result of an isotropic light extraction efficiency simulated similarly to the case of FIG. 3 , except that a principal plane of a c-plane, namely, a (0001) plane, was employed instead of an m-plane.
- FIG. 5 is a graph showing the results of the simulation of the light extraction efficiency in the example 1.
- Angle degree ⁇ was varied within the range of 20 degrees and 130 degrees independently.
- Angle degree ⁇ of the light source was varied within the range of 0 degrees and 90 degrees independently.
- the horizontal axis represents Angle degree ⁇
- the vertical axis represents Angle degree ⁇ of the light source.
- the values included in the graph shown in FIG. 5 are values obtained by dividing the light extraction efficiency of the anisotropic orientation distribution (See FIG. 3 ) by the light extraction efficiency of the isotropic orientation distribution (See FIG. 4 ). Hereinafter, this value is referred to as “light extraction ratio”.
- a non-polar or semi-polar nitride semiconductor light-emitting diode having Angle degree ⁇ and Angle degree ⁇ has the same light extraction efficiency as or higher light extraction efficiency than a polar nitride semiconductor light-emitting diode having the same Angle degree ⁇ and the same Angle degree 8 .
- the light extraction ratio is less than 1
- a non-polar or semi-polar nitride semiconductor light-emitting diode having Angle degree ⁇ and Angle degree ⁇ has lower light extraction efficiency than a polar nitride semiconductor light-emitting diode having the same Angle degree ⁇ and the same Angle degree ⁇ .
- the light extraction ratio is not less than 1.
- the range where the light extraction ratio is not less than 1 is defined by the Group Aa and the Group Ab.
- Group Aa 20 degrees ⁇ Angle degree ⁇ 40 degrees (Ia) and 0 degrees ⁇ Angle degree ⁇ 40 degrees (IIa)
- the example 1 provides a specific shape of the nitride semiconductor light-emitting diode having high light extraction efficiency.
- FIG. 6 shows a top view of the nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 2. Needless to say, this top view corresponds to the drawing viewed from the normal line of the active layer 104 . As shown in FIG. 6 , the nitride semiconductor light-emitting diode 100 according to the example 2 had a shape of a right triangle having three corners A, B, and C in the Lop view.
- the nitride semiconductor light-emitting diode 100 had a triangular shape consisting of Side BC, Side CA, and Side AB having a length La, a length Lb, and a length Lc, respectively, in the top view.
- angles opposite to Side BC, Side CA, and Side AB had Angle degree ⁇ , Angle degree ⁇ and Angle degree ⁇ , respectively.
- Angle degree ⁇ of the light source was formed between the c-axis and the longitudinal direction of Side BC.
- the Angle degree ⁇ was fixed to be equal to 90 degrees. Needless to say, Angle degree ⁇ was equal to a value of (90 ⁇ Angle degree ⁇ ).
- plus and minus of Angle degree ⁇ of the light source are defined as below.
- the plus corresponds to the case where an arrow y parallel to a direction from the corner C having Angle degree ⁇ to the corner B having Angle degree ⁇ is rotated about the light source in such a manner that the arrow y is brought closer to the corner A having Angle degree ⁇ .
- the minus corresponds to the case where an arrow y is rotated about the light source in such a manner that the arrow y is brought farther away from the corner A having Angle degree ⁇ .
- This definition of the plus and the minus of Angle degree ⁇ of light source is also applied to the example 3.
- FIG. 7 shows a result of the simulation of the anisotropic light extraction efficiency in the example 2.
- Angle degree ⁇ was fixed to be equal to 20 degrees.
- the light extraction efficiency was simulated, while Angle degree ⁇ of the light source was varied from ⁇ 90 degrees to + 90 degrees.
- the horizontal axis represents Angle degree ⁇ of the light source
- the vertical axis represents normalized light extraction efficiency.
- the normalized light extraction efficiency was obtained similarly to the case of the example 1.
- the light extraction efficiency was substantially constant regardless of Angle degree ⁇ of the light source.
- the light extraction efficiency was varied depending on the Angle degree ⁇ of the light source.
- FIG. 8 is a graph showing the results of the simulation of the light extraction efficiency in the example 2.
- Angle degree ⁇ was varied within the range of 10 degrees and 45 degrees independently.
- Angle degree ⁇ of the light source was varied within the range of ⁇ 90 degrees and 90 degrees independently.
- the horizontal axis represents Angle degree ⁇
- the vertical axis represents Angle degree ⁇ of the light source.
- the values included in the graph shown in FIG. 8 are values of the light extraction ratio.
- the light extraction ratio is not less than 1.
- the range where the light extraction ratio is not less than 1 is defined by the Group Ba, the Group Bb, and the Group Bc.
- Group Ba 10 degrees ⁇ Angle degree ⁇ 30 degrees (IIIa) and ⁇ 30 degrees ⁇ Angle degree ⁇ 45 degrees (IVa)
- Group Bb 30 degrees ⁇ Angle degree ⁇ 35 degrees (IIIb) and ⁇ 25 degrees ⁇ Angle degree ⁇ 45 degrees (IVb)
- Group Bc 35 degrees ⁇ Angle degree ⁇ 40 degrees (Mc) and 10 degrees ⁇ Angle degree ⁇ 45 degrees (IVc)
- the example 2 provides a specific shape of the nitride semiconductor light-emitting diode having high light extraction efficiency.
- FIG. 9 shows a top view of the nitride semiconductor light-emitting diode 100 supposed in the simulation according to the example 3. Needless to say, this top view corresponds to the drawing viewed from the normal line of the active layer 104 . As shown in FIG. 9 , the nitride semiconductor light-emitting diode 100 according to the example 3 had a shape of a scalene triangle having three corners A, B, and C in the top view.
- the nitride semiconductor light-emitting diode 100 had a triangular shape consisting of Side BC, Side CA, and Side AB having a length La, a length Lb, and a length Lc, respectively, in the top view.
- angles opposite to Side BC, Side CA, and Side AB had Angle degree ⁇ , Angle degree ⁇ and Angle degree ⁇ , respectively.
- Angle degree ⁇ of the light source was formed between the c-axis and the longitudinal direction of Side BC.
- Angle degree ⁇ is less than 45 degrees, both of the following two mathematical formulae (V) and (VI) are satisfied.
- FIG. 10 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3.
- Angle degree ⁇ was fixed to be equal to 20 degrees.
- the light extraction ratio was simulated, while Angle degree ⁇ of the light source was varied from ⁇ 90 degrees to +90 degrees and while Angle degree ⁇ was varied from 80 degrees to 90 degrees.
- FIG. 11 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3.
- Angle degree ⁇ was fixed to be equal to 30 degrees.
- the light extraction ratio was simulated, while Angle degree ⁇ of the light source was varied from ⁇ 90 degrees to +90 degrees and while Angle degree ⁇ was varied from 75 degrees to 90 degrees.
- FIG. 12 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3.
- Angle degree ⁇ was fixed to be equal to 35 degrees.
- the light extraction ratio was simulated, while Angle degree ⁇ of the light source was varied from ⁇ 90 degrees to +90 degrees and while Angle degree ⁇ was varied from 72.5 degrees to 90 degrees.
- the horizontal axis represents Angle degree ⁇
- the vertical axis represents Angle degree ⁇ of the light source.
- the values included in the graph shown in each of FIG. 10-FIG . 12 are values of the light extraction ratio.
- the light extraction ratio is not less than 1.
- the range where the light extraction ratio is not less than 1 is defined by the group Ca.
- the light extraction ratio is not less than 1. In other words, the range where the light extraction ratio is not less than 1 is defined by the Group Cb, the Group Cc, and the Group Cd.
- the nitride semiconductor light-emitting diode according to the present invention can be used for a ceiling light or an automotive head lamp.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to a nitride semiconductor light-emitting diode.
- 2. Description of the Related Art
- Japanese Patent Application laid-open Publication No. 2012-023249A discloses a nitride semiconductor light-emitting diode.
FIG. 13 shows a nitride semiconductor light-emitting diode disclosed inFIG. 3G included in Japanese Patent Application laid-open Publication No. 2012-023249A. Japanese Patent Application laid-open Publication No. 2012-023249A discloses in the paragraph - that a nitride semiconductor light-emitting diode having a shape of a scalene triangle in a top view has higher light extraction efficiency than a nitride semiconductor light-emitting diode having a shape of a regular triangle.
- More specifically, Japanese Patent Application laid-open Publication No. 2012-023249A discloses in the paragraph [0200] that the light extraction efficiency of the scalene triangle nitride semiconductor light-emitting diode shown in
FIG. 13 is 1.4 times as high as that of a regular triangle nitride semiconductor light-emitting diode. - Furthermore, Japanese Patent Application laid-open Publication No. 2012-023249A discloses in the paragraph [0466] that it is most desirable that a nitride substrate included in the nitride semiconductor light-emitting diode has a (1-100) plane.
- The present invention provides a nitride semiconductor light-emitting diode comprising:
- a non-polar or semi-polar p-type nitride semiconductor layer;
- a non-polar or semi-polar active layer:
- a non-polar or semi-polar n-type nitride semiconductor layer;
- a p-side electrode; and
- an n-side electrode, wherein
- the active layer is interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer;
- the p-type nitride semiconductor layer and the n-type nitride semiconductor layer are electrically connected to the p-side electrode and the n-side electrode, respectively:
- the nitride semiconductor light-emitting diode has a shape of a triangle composed of Side BC, Side CA, and Side AB having a length of La, a length of Lb, and a length of Lc, respectively, in a top view of the nitride semiconductor light-emitting diode;
- angles opposite to Side BC, Side CA, and Side AB have Angle degree α, Angle degree β, and Angle degree γ, respectively, in the triangle;
- Angle degree θ is formed between a c-axis and a longitudinal direction of Side BC in the top view,
- the length Lb is equal to the length Lc, and
- either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied.
- Group Aa: 20 degrees≦Angle degreeα≦40 degrees (Ia) and 0 degrees≦Angle degree θ≦40 degrees (IIa)
- Group Ab: 90 degrees≦Angle degree α≦130 degrees (Ib) and 50 degrees≦Angle degree θ≦90 degrees (IIb)
- The present invention provides another nitride semiconductor light-emitting diode comprising:
- a non-polar or semi-polar p-type nitride semiconductor layer;
- a non-polar or semi-polar active layer;
- a non-polar or semi-polar fl-type nitride semiconductor layer;
- a p-side electrode; and
- an n-side electrode, wherein
- the active layer is interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer;
- the p-type nitride semiconductor layer and the n-type nitride semiconductor layer are electrically connected to the p-side electrode and the n-side electrode, respectively;
- the nitride semiconductor light-emitting diode has a shape of a triangle composed of Side BC, Side CA, and Side AB having a length of La, a length of Lb, and a length of Lc, respectively, in a top view of the nitride semiconductor light-emitting diode;
- angles opposite to Side BC, Side CA, and Side AB have Angle degree α, Angle degree β, and Angle degree γ, respectively, in the triangle;
- Angle degree θ is formed between a c-axis and a longitudinal direction of Side BC in the top view;
- Angle degree γ is equal to 90 degrees; and
- any one of Group Ba consisting of the following two mathematical formulae (IIIa) and (IVa), Group Bb consisting of the following two mathematical formulae (IIIb) and (IVb), or Group Bc consisting of the following two mathematical formulae (IIIc) and (IVc) is satisfied.
- Group Ba: 10 degrees≦Angle degree α≦30 degrees (IIIa) and −30 degrees≦Angle degree θ≦45 degrees (IVa)
- Group Bb: 30 degrees<Angle degree α≦35 degrees (IIIb) and −25 degrees≦Angle degree θ≦45 degrees (IVb)
- Group Bc: 35 degrees<Angle degree α≦40 degrees (IIIc) and 10 degrees≦Angle degree α≦45 degrees (IVc)
- The present invention provides still another nitride semiconductor light-emitting diode comprising:
- a non-polar or semi-polar p-type nitride semiconductor layer;
- a non-polar or semi-polar active layer;
- a non-polar or semi-polar n-type nitride semiconductor layer;
- a p-side electrode; and
- an n-side electrode, wherein
- the active layer is interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer;
- the p-type nitride semiconductor layer and the n-type nitride semiconductor layer are electrically connected to the p-side electrode and the n-side electrode, respectively;
- the nitride semiconductor light-emitting diode has a shape of a triangle composed of Side BC, Side CA, and Side AB having a length of La, a length of Lb, and a length of Lc, respectively, in a top view of the nitride semiconductor light-emitting diode;
- angles opposite to Side BC, Side CA, and Side AB have Angle degree α, Angle degree β, and Angle degree γ, respectively, in the triangle; Angle degree θ is formed between a c-axis and a longitudinal direction of Side BC in the top view;
- both of the following two mathematical formulae (V) and (VI) are satisfied; and
-
- the length La<the length Lb<the length Lc (V)
- Angle degree α<Angle degree β<Angle degree γ (VI)
- any one of Group Ca consisting of the following three mathematical formulae (VIIa), (VIIIa), and (IXa), Group Cb consisting of the following three mathematical formulae (VIIb), (VIIIb), and (IXb), Group Cc consisting of the following three mathematical formulae (VIIc), (VIIIc), and (IXc), or Group Cd consisting of the following three mathematical formulae (VIId), (VIIId), and (IXd) is satisfied:
- Group Ca:
- 20 degrees≦Angle degree α≦30 degrees (VIIa),
- 75 degrees≦Angle degree γ≦90 degrees (VIIIa), and
- −30 degrees≦Angle degree θ≦30 degrees (IXa)
- Group Cb:
- 30 degrees≦Angle degree α≦35 degrees (VIIb),
- 72.5 degrees≦Angle degree γ≦75 degrees (VIIIb), and
- 20 degrees≦Angle degree θ≦20 degrees (IXb)
- Group Cc:
- 30 degrees≦Angle degree α≦35 degrees (VIIc),
- 75 degrees<Angle degree γ≦85 degrees (VIIIc), and
- −10 degrees≦Angle degree θ≦10 degrees (IXc)
- Group Cd:
- 30 degrees≦Angle degree α≦35 degrees (VIId),
- 85 degrees<Angle degree γ≦90 degrees (VIIId), and
- −10 degrees≦Angle degree θ≦20 degrees (IXd)
- The present invention provides a specific shape of a nitride semiconductor light-emitting diode having high light extraction efficiency.
-
FIG. 1 shows a cross-sectional view of a nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 1; -
FIG. 2 shows a top view of the nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 1; -
FIG. 3 shows a result of the simulation of the anisotropic light extraction efficiency in the example 1; -
FIG. 4 shows a result of the isotropic light extraction efficiency; -
FIG. 5 is a graph showing the results of the simulation of the light extraction efficiency in the example 1; -
FIG. 6 shows a top view of a nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 2; -
FIG. 7 shows a result of the simulation of the anisotropic light extraction efficiency in the example 2; -
FIG. 8 is a graph showing the results of the simulation of the light extraction efficiency in the example 2; -
FIG. 9 shows a top view of a nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 3; -
FIG. 10 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3; - FIG, 11 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3;
-
FIG. 12 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3; and -
FIG. 13 shows a nitride semiconductor light-emitting diode disclosed inFIG. 3G included in Japanese Parent Application laid-open Publication No. 2012-023249A. - The present invention will be described below with reference to the drawings.
- (Definition of the Terms)
- In the instant specification, the term “scalene triangle” means a triangle having three sides having different lengths from one another and three angles having different degrees from one another.
- The term “anisotropic orientation distribution” means distribution of light emitted from a non-polar or semi-polar active layer. Generally, it means distribution of light emitted from an active layer having a principal plane of an m-plane. Light emitted from the active layer having a principal plane of an m-plane has a high light intensity along a c-axis; however, has a low light intensity along an a-axis.
- The term “isotropic orientation distribution” means distribution of light emitted from a polar active layer, namely, an active layer having a principal plane of a c-axis. The a-axis intensity of light emitted from the active layer having a principal plane of a c-plane is substantially the same as the m-axis intensity of the light.
- Plus and minus of Angle degree θ will be defined in the example 2, which will be described later.
- The following simulation was performed.
FIG. 1 shows a cross-sectional view of a nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 1. Similarly to a conventional nitride semiconductor light-emitting diode, as shown inFIG. 1 , a nitride semiconductor light-emittingdiode 100 comprised a non-polar or semi-polar p-typenitride semiconductor layer 102, a non-polar or semi-polaractive layer 104, a non-polar or semi-polar n-typenitride semiconductor layer 106, a p-side electrode 108, and an n-side electrode 110. Theactive layer 104 was interposed between the p-typenitride semiconductor layer 102 and the n-typenitride semiconductor layer 106. An m-plane, namely, a (1-100) plane, was selected as a non-polar plane in the simulation according to the example 1. - The n-type
nitride semiconductor layer 106 functioned as a substrate of the nitride semiconductor light-emittingdiode 100. Theactive layer 104 and the p-typenitride semiconductor layer 102 were provided under the n-typenitride semiconductor layer 106. Anuneven structure 120 was provided on the upper surface of the n-typenitride semiconductor layer 106. The p-typenitride semiconductor layer 102 and the n-typenitride semiconductor layer 106 were electrically connected to the p-side electrode 108 and the n-side electrode 110, respectively. In the simulation, a voltage was applied between the p-side electrode 108 and the n-side electrode 110 to emit light from theactive layer 104. - The nitride semiconductor light-emitting
diode 100 was disposed on a mountingboard 150. The mountingboard 150 comprised afirst electrode 152 p and asecond electrode 152 n on the surface thereof. Thefirst electrode 152 p and thesecond electrode 152 n were electrically connected to the p-side electrode 108 and the n-side electrode 110, respectively. - The nitride semiconductor light-emitting
diode 100 had a shape of a square having four sides each having a length of 600 micrometers in a top view. The nitride semiconductor light-emittingdiode 100 had a thickness of 100 micrometers. Although not shown, the nitride semiconductor light-emittingdiode 100 may be coated with resin to give a nitride semiconductor light-emitting diode chip (hereinafter, merely referred to as a “chip”). In other words, the chip comprises the nitride semiconductor light-emittingdiode 100 and the resin coating it. - The light emitted from such a chip was simulated with a simulator utilizing a ray tracing method. The number of the rays in the ray tracing method was 100,000. This number was adequate for the calculation of the light extraction efficiency.
-
FIG. 2 shows a top view of the nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 1. Needless to say, this top view corresponds to the drawing viewed from the normal line of theactive layer 104. As shown inFIG. 2 , the nitride semiconductor light-emittingdiode 100 according to the example 1 has a shape of an isosceles triangle having three corners A, B, and C in the top view. - As shown in
FIG. 2 , the nitride semiconductor light-emittingdiode 100 had a triangular shape consisting of Side BC, Side CA, and Side AB having a length La, a length Lb, and a length Lc, respectively, in the top view. In this triangle, angles opposite to Side BC, Side CA, and Side AB had Angle degree α, Angle degree β and Angle degree γ, respectively. In the top view, Angle degree θ was formed between the c-axis and the longitudinal direction of Side BC. Needless to say, Angle degree β was equal to Angle degree γ, and to a value of (180=Angle degree α)/2. The length Lb was equal to the length Lc. - FIG, 3 shows a result of the simulation of the anisotropic light extraction efficiency in the example 1. In
FIG. 3 , Angle degree α was fixed to be equal to 20 degrees. Furthermore, the light extraction efficiency was simulated, while Angle degree θ of the light source was varied from zero degrees to 90 degrees. InFIG. 3 , the horizontal axis represents Angle degree θ of the light source, and the vertical axis represents normalized light extraction efficiency. The normalized light extraction efficiency was obtained by dividing a value of the light extraction efficiency simulated at Angle degree θ by the smallest value of the light extraction efficiency. The smallest value of the light extraction efficiency means the smallest value among various values of the light extraction efficiency obtained while Angle degree θ of the light source was varied from zero degrees to 90 degrees. -
FIG. 4 shows a result of an isotropic light extraction efficiency simulated similarly to the case ofFIG. 3 , except that a principal plane of a c-plane, namely, a (0001) plane, was employed instead of an m-plane. - As is dear from comparison of
FIG. 3 toFIG. 4 , in the case of a c-plane, the light extraction efficiency was constant regardless of the value of Angle degree θ of the light source. On the other hand, in the case of an m-plane, the light extraction efficiency was varied depending on Angle degree θ of the light source. As is clear fromFIG. 3 , the light extraction efficiency is improved with a decrease in Angle degree θ of the light source. -
FIG. 5 is a graph showing the results of the simulation of the light extraction efficiency in the example 1. InFIG. 5 , Angle degree α was varied within the range of 20 degrees and 130 degrees independently. Angle degree θ of the light source was varied within the range of 0 degrees and 90 degrees independently. InFIG. 5 , the horizontal axis represents Angle degree α, and the vertical axis represents Angle degree θ of the light source. The values included in the graph shown inFIG. 5 are values obtained by dividing the light extraction efficiency of the anisotropic orientation distribution (SeeFIG. 3 ) by the light extraction efficiency of the isotropic orientation distribution (SeeFIG. 4 ). Hereinafter, this value is referred to as “light extraction ratio”. - In the case where the light extraction ratio is no less than 1, a non-polar or semi-polar nitride semiconductor light-emitting diode having Angle degree α and Angle degree θ has the same light extraction efficiency as or higher light extraction efficiency than a polar nitride semiconductor light-emitting diode having the same Angle degree α and the
same Angle degree 8. On the other hand, where the light extraction ratio is less than 1, a non-polar or semi-polar nitride semiconductor light-emitting diode having Angle degree α and Angle degree θ has lower light extraction efficiency than a polar nitride semiconductor light-emitting diode having the same Angle degree α and the same Angle degree θ. - As is clear from
FIG. 5 , if either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied, the light extraction ratio is not less than 1. In other words, the range where the light extraction ratio is not less than 1 is defined by the Group Aa and the Group Ab. - Group Aa: 20 degrees≦Angle degree α≦40 degrees (Ia) and 0 degrees≦Angle degree θ≦40 degrees (IIa)
- Group Ab: 90 degrees≦Angle degree α≦130 degrees (Ib) and 50 degrees≦Angle degree θ≦90 degrees (IIb)
- Regarding the Group Aa, see the lower left of
FIG. 5 . Regarding the Group Ab, see the upper right ofFIG. 5 . As just described, the example 1 provides a specific shape of the nitride semiconductor light-emitting diode having high light extraction efficiency. -
FIG. 6 shows a top view of the nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 2. Needless to say, this top view corresponds to the drawing viewed from the normal line of theactive layer 104. As shown inFIG. 6 , the nitride semiconductor light-emittingdiode 100 according to the example 2 had a shape of a right triangle having three corners A, B, and C in the Lop view. - As shown in
FIG. 6 , the nitride semiconductor light-emittingdiode 100 had a triangular shape consisting of Side BC, Side CA, and Side AB having a length La, a length Lb, and a length Lc, respectively, in the top view. In this triangle, angles opposite to Side BC, Side CA, and Side AB had Angle degree α, Angle degree β and Angle degree γ, respectively. In the top view, Angle degree θ of the light source was formed between the c-axis and the longitudinal direction of Side BC. The Angle degree γ was fixed to be equal to 90 degrees. Needless to say, Angle degree α was equal to a value of (90−Angle degree β). - In the example 2, plus and minus of Angle degree θ of the light source are defined as below. As shown in
FIG. 6 , the plus corresponds to the case where an arrow y parallel to a direction from the corner C having Angle degree γ to the corner B having Angle degree β is rotated about the light source in such a manner that the arrow y is brought closer to the corner A having Angle degree α. On the other hand, the minus corresponds to the case where an arrow y is rotated about the light source in such a manner that the arrow y is brought farther away from the corner A having Angle degree α. This definition of the plus and the minus of Angle degree θ of light source is also applied to the example 3. -
FIG. 7 shows a result of the simulation of the anisotropic light extraction efficiency in the example 2. InFIG. 7 , Angle degree α was fixed to be equal to 20 degrees. Furthermore, the light extraction efficiency was simulated, while Angle degree θ of the light source was varied from −90 degrees to +90 degrees. InFIG. 7 , the horizontal axis represents Angle degree θ of the light source, and the vertical axis represents normalized light extraction efficiency. The normalized light extraction efficiency was obtained similarly to the case of the example 1. Although not shown, in the case of a c-plane, similarly to the example 1, the light extraction efficiency was substantially constant regardless of Angle degree θ of the light source. On the other hand, in the case of an m-plane, the light extraction efficiency was varied depending on the Angle degree θ of the light source. -
FIG. 8 is a graph showing the results of the simulation of the light extraction efficiency in the example 2. InFIG. 8 , Angle degree α was varied within the range of 10 degrees and 45 degrees independently. Angle degree θ of the light source was varied within the range of −90 degrees and 90 degrees independently. InFIG. 8 , the horizontal axis represents Angle degree α, and the vertical axis represents Angle degree θ of the light source. Similarly to the case ofFIG. 5 , the values included in the graph shown inFIG. 8 are values of the light extraction ratio. - As is dear from
FIG. 8 , if any one of Group Ba consisting of the following two mathematical formulae (IIIa) and (IVa), Group Bb consisting of the following two mathematical formulae (IIIb) and (IVb), or Group Bc consisting of the following two mathematical formulae (IIIc) and (IVc) is satisfied, the light extraction ratio is not less than 1. In other words, the range where the light extraction ratio is not less than 1 is defined by the Group Ba, the Group Bb, and the Group Bc. - Group Ba: 10 degrees≦Angle degree α≦30 degrees (IIIa) and −30 degrees≦Angle degree θ≦45 degrees (IVa)
- Group Bb: 30 degrees<Angle degree α≦35 degrees (IIIb) and −25 degrees≦Angle degree θ≦45 degrees (IVb)
- Group Bc: 35 degrees<Angle degree α≦40 degrees (Mc) and 10 degrees≦Angle degree θ≦45 degrees (IVc)
- As just described, the example 2 provides a specific shape of the nitride semiconductor light-emitting diode having high light extraction efficiency.
-
FIG. 9 shows a top view of the nitride semiconductor light-emittingdiode 100 supposed in the simulation according to the example 3. Needless to say, this top view corresponds to the drawing viewed from the normal line of theactive layer 104. As shown inFIG. 9 , the nitride semiconductor light-emittingdiode 100 according to the example 3 had a shape of a scalene triangle having three corners A, B, and C in the top view. - As shown in
FIG. 9 , the nitride semiconductor light-emittingdiode 100 had a triangular shape consisting of Side BC, Side CA, and Side AB having a length La, a length Lb, and a length Lc, respectively, in the top view. In this triangle, angles opposite to Side BC, Side CA, and Side AB had Angle degree α, Angle degree β and Angle degree γ, respectively. In the top view, Angle degree θ of the light source was formed between the c-axis and the longitudinal direction of Side BC. InFIG. 9 , the mathematical formulae: the length Lb<the length La<the length Lc and Angle degree β<Angle degree α=60 degrees<Angle degree γ are satisfied. However, when Angle degree α is less than 45 degrees, both of the following two mathematical formulae (V) and (VI) are satisfied. - the length La<the length Lb<the length Lc (V)
- Angle degree α<Angle degree β<Angle degree γ (VI)
-
FIG. 10 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3. InFIG. 10 , Angle degree α was fixed to be equal to 20 degrees. Furthermore, the light extraction ratio was simulated, while Angle degree θ of the light source was varied from −90 degrees to +90 degrees and while Angle degree γ was varied from 80 degrees to 90 degrees. -
FIG. 11 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3. InFIG. 11 , Angle degree α was fixed to be equal to 30 degrees. Furthermore, the light extraction ratio was simulated, while Angle degree θ of the light source was varied from −90 degrees to +90 degrees and while Angle degree γ was varied from 75 degrees to 90 degrees. -
FIG. 12 shows a result of the simulation of the anisotropic light extraction efficiency in the example 3. InFIG. 12 , Angle degree α was fixed to be equal to 35 degrees. Furthermore, the light extraction ratio was simulated, while Angle degree θ of the light source was varied from −90 degrees to +90 degrees and while Angle degree γ was varied from 72.5 degrees to 90 degrees. InFIG. 10-FIG . 12, the horizontal axis represents Angle degree γ, and the vertical axis represents Angle degree θ of the light source. The values included in the graph shown in each ofFIG. 10-FIG . 12 are values of the light extraction ratio. - As is clear from
FIG. 10 andFIG. 11 , if Group Ca consisting of the following three mathematical formulae (VIIa), (VIIIa), and (IXa) is satisfied, the light extraction ratio is not less than 1. In other words, the range where the light extraction ratio is not less than 1 is defined by the group Ca. - Group Ca:
- 20 degrees≦Angle degree α≦30 degrees (VIIa),
- 75 degrees≦Angle degree γ≦90 degrees (VIIIa), and
- −30 degrees≦Angle degree θ≦30 degrees (IXa)
- As is clear from
FIG. 11 andFIG. 12 , if any one of Group Cb consisting of the following three mathematical formulae (VIIb), (VIIIb), and (IXb), Group Cc consisting of the following three mathematical formulae (VIIc), (VIIIc), and (IXc), or Group Cd consisting of the following three mathematical formulae (VIId), (VIIId), and (IXd) is satisfied, the light extraction ratio is not less than 1. In other words, the range where the light extraction ratio is not less than 1 is defined by the Group Cb, the Group Cc, and the Group Cd. - Group Cb:
- 30 degrees≦Angle degree α≦35 degrees (VIIb),
- 72.5 degrees≦Angle degree γ≦75 degrees (VIIb), and
- −20 degrees≦Angle degree θ≦20 degrees (IXb)
- Group Cc:
- 30 degrees≦Angle degree α≦35 degrees (VIIc),
- 75 degrees<Angle degree γ≦85 degrees (VIIIc), and
- −10 degrees≦Angle degree θ≦10 degrees (IXc)
- Group Cd:
- 30 degrees≦Angle degree α≦35 degrees (VIId),
- 85 degrees<Angle degree γ≦90 degrees (VIIId), and
- 31 10 degrees≦Angle degree θ≦20 degrees (IXd)
- The nitride semiconductor light-emitting diode according to the present invention can be used for a ceiling light or an automotive head lamp.
-
- 100 nitride semiconductor light-emitting diode
- 102 p-type nitride semiconductor layer
- 104 active layer
- 106 n-type nitride semiconductor layer
- 108 p-side electrode
- 110 n-side electrode
- 120 uneven structure
- 150 mounting board
- 152 p first electrode
- 152 n second electrode
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/830,713 US9385275B2 (en) | 2014-04-08 | 2015-08-19 | Nitride semiconductor light-emitting diode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-079114 | 2014-04-08 | ||
JP2014079114 | 2014-04-08 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/830,713 Continuation US9385275B2 (en) | 2014-04-08 | 2015-08-19 | Nitride semiconductor light-emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
US9147807B1 US9147807B1 (en) | 2015-09-29 |
US20150287882A1 true US20150287882A1 (en) | 2015-10-08 |
Family
ID=54251877
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/493,481 Expired - Fee Related US9147807B1 (en) | 2014-04-08 | 2014-09-23 | Nitride semiconductor light-emitting diode |
US14/830,713 Expired - Fee Related US9385275B2 (en) | 2014-04-08 | 2015-08-19 | Nitride semiconductor light-emitting diode |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/830,713 Expired - Fee Related US9385275B2 (en) | 2014-04-08 | 2015-08-19 | Nitride semiconductor light-emitting diode |
Country Status (2)
Country | Link |
---|---|
US (2) | US9147807B1 (en) |
JP (1) | JP2015207752A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11355672B2 (en) | 2016-01-05 | 2022-06-07 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102599333B1 (en) | 2016-12-23 | 2023-11-06 | 엘지디스플레이 주식회사 | Light source module, back light unit and liquid crystal display device using the same |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7550775B2 (en) * | 2006-01-16 | 2009-06-23 | Sony Corporation | GaN semiconductor light-emitting element and method for manufacturing the same |
US20100047947A1 (en) * | 2008-08-21 | 2010-02-25 | Sony Corporation | Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing |
US7994527B2 (en) * | 2005-11-04 | 2011-08-09 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (LED) |
US8114698B2 (en) * | 2007-11-30 | 2012-02-14 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US8217418B1 (en) * | 2011-02-14 | 2012-07-10 | Siphoton Inc. | Semi-polar semiconductor light emission devices |
US20120205617A1 (en) * | 2011-02-14 | 2012-08-16 | Siphoton Inc. | Non-polar semiconductor light emission devices |
US8293551B2 (en) * | 2010-06-18 | 2012-10-23 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US20130037779A1 (en) * | 2011-08-12 | 2013-02-14 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and method for producing the same |
US20130126902A1 (en) * | 2010-08-06 | 2013-05-23 | Panasonic Corporation | Semiconductor light emitting element |
US20130175566A1 (en) * | 2011-07-14 | 2013-07-11 | Panasonic Corporation | Nitride-based semiconductor light-emitting element |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982587A (en) | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | Preparation of nonsquare electronic chip |
JPH10326910A (en) | 1997-05-19 | 1998-12-08 | Song-Jae Lee | Light-emitting diode and light-emitting diode array lamp using it |
JP2009071174A (en) | 2007-09-14 | 2009-04-02 | Rohm Co Ltd | Semiconductor light-emitting device |
JP2010098068A (en) | 2008-10-15 | 2010-04-30 | Showa Denko Kk | Light emitting diode, manufacturing method thereof, and lamp |
WO2011007816A1 (en) * | 2009-07-15 | 2011-01-20 | 三菱化学株式会社 | Semiconductor light-emitting element, semiconductor light-emitting device, method for manufacturing semiconductor light-emitting element, and method for manufacturing semiconductor light-emitting device |
US8686431B2 (en) * | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
WO2014038113A1 (en) * | 2012-09-10 | 2014-03-13 | パナソニック株式会社 | Nitride semiconductor light-emitting device |
-
2014
- 2014-08-29 JP JP2014175252A patent/JP2015207752A/en active Pending
- 2014-09-23 US US14/493,481 patent/US9147807B1/en not_active Expired - Fee Related
-
2015
- 2015-08-19 US US14/830,713 patent/US9385275B2/en not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7994527B2 (en) * | 2005-11-04 | 2011-08-09 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (LED) |
US7550775B2 (en) * | 2006-01-16 | 2009-06-23 | Sony Corporation | GaN semiconductor light-emitting element and method for manufacturing the same |
US8114698B2 (en) * | 2007-11-30 | 2012-02-14 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
US20100047947A1 (en) * | 2008-08-21 | 2010-02-25 | Sony Corporation | Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing |
US8293551B2 (en) * | 2010-06-18 | 2012-10-23 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US20130126902A1 (en) * | 2010-08-06 | 2013-05-23 | Panasonic Corporation | Semiconductor light emitting element |
US8217418B1 (en) * | 2011-02-14 | 2012-07-10 | Siphoton Inc. | Semi-polar semiconductor light emission devices |
US20120205617A1 (en) * | 2011-02-14 | 2012-08-16 | Siphoton Inc. | Non-polar semiconductor light emission devices |
US8624292B2 (en) * | 2011-02-14 | 2014-01-07 | Siphoton Inc. | Non-polar semiconductor light emission devices |
US20130175566A1 (en) * | 2011-07-14 | 2013-07-11 | Panasonic Corporation | Nitride-based semiconductor light-emitting element |
US20130037779A1 (en) * | 2011-08-12 | 2013-02-14 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and method for producing the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11355672B2 (en) | 2016-01-05 | 2022-06-07 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US9385275B2 (en) | 2016-07-05 |
JP2015207752A (en) | 2015-11-19 |
US9147807B1 (en) | 2015-09-29 |
US20150357522A1 (en) | 2015-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104798203B (en) | Using the white light source of the laser diode based on group III-nitride of pumped phosphor | |
US10222024B2 (en) | Lens for light emitting device | |
US9279567B2 (en) | Lens having total reflective side surfaces and light source module with same | |
US20110042698A1 (en) | Emitter package with angled or vertical led | |
US9385275B2 (en) | Nitride semiconductor light-emitting diode | |
WO2014048896A1 (en) | Optoelectronic component device, method for producing an optoelectronic component device, and method for operating an optoelectronic component device | |
US11127879B2 (en) | Light-emitting diode | |
US9752751B2 (en) | Optical lens | |
US10804431B2 (en) | Polarization-selecting nano light-emitting diodes | |
US9899582B2 (en) | Light source module | |
US10109768B2 (en) | Light emitting diode chip | |
TWI464339B (en) | Light emitting diode bar and light emitting diode module using the same | |
US20150219328A1 (en) | Led lighting fixture | |
US20120224371A1 (en) | Lighting apparatus | |
US10193023B2 (en) | Light-emitting diode chip | |
US20170175973A1 (en) | Lighting device | |
US9746597B2 (en) | Light pipe and housing assembly using the same | |
US20150140701A1 (en) | Method for manufacturing light emitting diode package | |
US20150053917A1 (en) | Semiconductor light emitting device | |
US7768710B2 (en) | Optical film having luminous flux | |
KR102239623B1 (en) | Connector, circuit board module and circuit board module array including the same | |
US9405053B2 (en) | LED module | |
US9276171B2 (en) | Nitride semiconductor light-emitting diode | |
US8608344B2 (en) | LED lighting structure | |
TWI605613B (en) | Semiconductor light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: GYRUS ACMI, INC., D/B/A OLYMPUS SURGICAL TECHNOLOG Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KONSTORUM, GREGORY S.;CHENG, MING J.;SIGNING DATES FROM 20140925 TO 20140926;REEL/FRAME:033839/0872 |
|
AS | Assignment |
Owner name: PANASONIC CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMADA, ATSUSHI;INOUE, AKIRA;REEL/FRAME:033877/0420 Effective date: 20140820 |
|
AS | Assignment |
Owner name: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PANASONIC CORPORATION;REEL/FRAME:034194/0143 Effective date: 20141110 Owner name: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LT Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PANASONIC CORPORATION;REEL/FRAME:034194/0143 Effective date: 20141110 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |
|
AS | Assignment |
Owner name: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., JAPAN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ERRONEOUSLY FILED APPLICATION NUMBERS 13/384239, 13/498734, 14/116681 AND 14/301144 PREVIOUSLY RECORDED ON REEL 034194 FRAME 0143. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:PANASONIC CORPORATION;REEL/FRAME:056788/0362 Effective date: 20141110 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20230929 |