US20150380026A1 - Heated afm layer deposition and cooling process for tmr magnetic recording sensor with high pinning field - Google Patents
Heated afm layer deposition and cooling process for tmr magnetic recording sensor with high pinning field Download PDFInfo
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- US20150380026A1 US20150380026A1 US14/844,312 US201514844312A US2015380026A1 US 20150380026 A1 US20150380026 A1 US 20150380026A1 US 201514844312 A US201514844312 A US 201514844312A US 2015380026 A1 US2015380026 A1 US 2015380026A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/37—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using galvano-magnetic devices, e.g. Hall-effect devices using Hall or Hall-related effect, e.g. planar-Hall effect or pseudo-Hall effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
- H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
Definitions
- HDD hard disk drives
- data may be stored on one or more disks in a series of adjacent concentric circles which may be referred to as data tracks.
- a HDD may include a rotary actuator, a suspension mounted on an arm of the rotary actuator, and a slider bonded to the suspension to form a head gimbal assembly (HGA).
- HGA head gimbal assembly
- the slider carries a write head and read head, and radially floats over the surface of the storage media, e.g., a disk, under the control of a servo control system that selectively positions a head over a specific track of the disk.
- the reader is aligned over the center of a track for data read back.
- TMR tunneling magnetoresistance
- AFM antiferromagnetic
- H ex pinning magnetic field strength
- Prior processes have focused on heating the AFM layer after its deposition to improve the pinning field. However, this process does not improve the blocking temperature.
- FIG. 1 is an operational flow diagram illustrating an example prior art process for manufacturing a magnetic recording sensor having a conventional structure without a heating/cooling process
- FIG. 2 is an operational flow diagram illustrating an example process for manufacturing a magnetic recording sensor in accordance with various embodiments
- FIG. 3 illustrates an example magnetic recording sensor structure manufactured in accordance with various embodiments.
- FIG. 4 is an example graph indicative of magnetoresistance (MR) as a function of resistance area (RA) for a recording sensor manufactured in accordance with various embodiments.
- FIG. 5 is an example graph indicative of the dependence of pinning magnetic field strength (H ex ) on incoming wafer degas pressure.
- the terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one media layer with respect to other layers.
- one layer disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers.
- one layer disposed between two layers may be directly in contact with the two layers or may have one or more intervening layers.
- a first layer “on” a second layer is in contact with that second layer.
- the relative position of one layer with respect to other layers is provided assuming operations are performed relative to a substrate without consideration of the absolute orientation of the substrate.
- a substrate may be heated prior to AFM layer deposition. This is in contrast to prior methods and structures, which either manufacture the TMR structure without heating or perform heating after the AFM layer deposition.
- FIG. 1 is an operational flow diagram illustrating an example prior art process for manufacturing a magnetic recording sensor having a conventional structure without a heating/cooling process.
- Process 100 may begin at operation 102 , where a substrate is provided.
- an AFM layer is then deposited on the substrate.
- the substrate is heated in a chamber or station of a disk processing system.
- the substrate is subsequently cooled.
- a first pinned layer is added onto the AFM layer.
- a substrate can be provided, an AFM layer may be deposited on the substrate, and a pinned layer can be added onto the AFM layer.
- FIG. 2 illustrates an operational flow diagram illustrating an example process 200 for manufacturing a magnetic recording sensor in accordance with various embodiments.
- Process 200 may begin at operation 202 by providing a substrate.
- the substrate may be heated in a chamber or station of a disk processing system.
- an AFM layer may be deposited on the heated substrate.
- a first pinned layer can be added onto the AFM layer.
- the substrate can be cooled.
- a second pinned layer can be added onto the first pinned layer.
- FIG. 3 illustrates a TMR stack 300 that may be manufactured utilizing process 200 of FIG. 2 in accordance with the present disclosure.
- TMR stack 300 may include a shield layer, a seed layer, a spacer, an AFM layer, a first pinned layer, a second pinned layer, a Ruthenium (Ru) spacer, a reference layer, a barrier, a free layer and a cap layer.
- the AFM layer comprises Iridium Manganese (IrMn).
- the substrate is heated prior to depositing the AFM layer as described above at operation 204 of FIG. 2 .
- the substrate may be heated at temperatures ranging from 100° C. to 300° C.
- heating can be performed by a resistive process.
- the heating can be accomplished using a rapid thermal process.
- heating may be performed in the same chamber that the AFM layer is deposited.
- TMR stack 300 can be transferred to another chamber after heating of the substrate and before deposition of the AFM layer. During deposition of the AFM layer, TMR stack 300 can be maintained at approximately the temperature that the substrate was heated.
- the first pinned layer is deposited.
- a cooling process may then be performed as described above at operation 210 of FIG. 2 . Cooling can occur at temperatures ranging between ⁇ 222° C. to ⁇ 2° C. In one embodiment, the temperature of TMR stack 300 is less than 101° C. after cooling.
- Table 1 illustrates the performance characteristics of a TMR reader manufactured using two conventional processes versus a TMR reader manufactured using the process disclosed in the present disclosure. The operations of each process are illustrated from left to right under the “Structure” heading.
- a second pinned layer (P1b) is formed in addition to the first pinned layer (P1a).
- the disclosed process manufactures a TMR reader with an improved bi-layer performance, showing a higher pinned layer coercivity (Hcp), higher pinning magnetic field strength (Hex), and higher blocking temperature distribution (Tbd) than prior conventional processes.
- the TMR reader manufactured in accordance with the process disclosed herein also shows an improved full stack exchange bias (H's).
- H's full stack exchange bias
- the TMR reader also shows an improved magnetoresistance (MR) as a function of the resistance area (RA).
- Table 2 and FIG. 5 illustrate the pinning dependence of the wafer at different wafer degas pressures (p_ChE) in units of e*10 ⁇ 8 Torr for the TMR reader of the present disclosure and the conventional heat and cool after AFM deposition TMR reader.
- p_ChE wafer degas pressures
- Table 2 and FIG. 5 illustrate the pinning dependence of the wafer at different wafer degas pressures (p_ChE) in units of e*10 ⁇ 8 Torr for the TMR reader of the present disclosure and the conventional heat and cool after AFM deposition TMR reader.
- p_ChE wafer degas pressures
- the system and process for manufacturing a TMR reader provides many benefits. First, it improves the pinning strength of the TMR reader. Second, it improves the blocking temperature distribution. This in turn may improve the TMR device reliability and allow for a reduction of the thickness of the IrMn AFM layer. In one embodiment, the thickness of the layer may be reduced to 50 angstroms. Third, the in-coming wafer degas effect is substantially reduced. Fourth, due to the heating treatment prior to the AFM layer deposition, the illustrated process produces a smoother film than prior processes.
- CPP-GMR plane-giant magnetoresistance
- MRAM Magnetic Random Access Memory
- module does not imply that the components or functionality described or claimed as part of the module are all configured in a common package. Indeed, any or all of the various components of a module, whether control logic or other components, can be combined in a single package or separately maintained and can further be distributed in multiple groupings or packages or across multiple locations.
Abstract
Description
- This application is a divisional application of U.S. application Ser. No. 14/216,285, filed Mar. 17, 2014, entitled “HEATED AFM LAYER DEPOSITION AND COOLING PROCESS FOR TMR MAGNETIC RECORDING SENSOR WITH HIGH PINNING FIELD” (WD Docket No. T6728) which claims the benefit of U.S. Provisional Application Ser. No. 61/918,155 (Atty. Docket No. F6728.P), filed Dec. 19, 2013, which is incorporated herein by reference in its entirety.
- In magnetic storage devices such as hard disk drives (HDD), read and write heads are used to magnetically read and write information to and from storage media. In a HDD, data may be stored on one or more disks in a series of adjacent concentric circles which may be referred to as data tracks. A HDD may include a rotary actuator, a suspension mounted on an arm of the rotary actuator, and a slider bonded to the suspension to form a head gimbal assembly (HGA). In a traditional HDD, the slider carries a write head and read head, and radially floats over the surface of the storage media, e.g., a disk, under the control of a servo control system that selectively positions a head over a specific track of the disk. In this one read head (reader) configuration, the reader is aligned over the center of a track for data read back.
- As HDD storage capacities have increased, the data track separation has decreased and the density has increased. Smaller reader dimensions are required to meet these requirements of increasing track density and linear density. In tunneling magnetoresistance (TMR) readers, for example, this may involve decreasing the volume of the antiferromagnetic (AFM) layer. This reduction in volume reduces the blocking temperature distribution (TbD) and the pinning magnetic field strength (Hex) in the TMR reader, thereby worsening the thermal stability of the pinned layer. Accordingly, as the size of the TMR reader decreases, the pinning strength or exchange field needs to be increased to keep the pinned layer stable. Prior processes have focused on heating the AFM layer after its deposition to improve the pinning field. However, this process does not improve the blocking temperature.
- The present application is illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:
-
FIG. 1 is an operational flow diagram illustrating an example prior art process for manufacturing a magnetic recording sensor having a conventional structure without a heating/cooling process; -
FIG. 2 is an operational flow diagram illustrating an example process for manufacturing a magnetic recording sensor in accordance with various embodiments; -
FIG. 3 illustrates an example magnetic recording sensor structure manufactured in accordance with various embodiments. -
FIG. 4 is an example graph indicative of magnetoresistance (MR) as a function of resistance area (RA) for a recording sensor manufactured in accordance with various embodiments; and -
FIG. 5 is an example graph indicative of the dependence of pinning magnetic field strength (Hex) on incoming wafer degas pressure. - In the following description, numerous specific details are set forth to provide a thorough understanding of various embodiment of the present disclosure. It will be apparent to one skilled in the art, however, that these specific details need not be employed to practice various embodiments of the present disclosure. In other instances, well known components or methods have not been described in detail to avoid unnecessarily obscuring various embodiments of the present disclosure.
- The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one media layer with respect to other layers. As such, for example, one layer disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer disposed between two layers may be directly in contact with the two layers or may have one or more intervening layers. By contrast, a first layer “on” a second layer is in contact with that second layer. Additionally, the relative position of one layer with respect to other layers is provided assuming operations are performed relative to a substrate without consideration of the absolute orientation of the substrate.
- In accordance with the present disclosure, systems and methods for manufacturing a TMR magnetic recording sensor with a high pinning field are disclosed. In the present disclosure, a substrate may be heated prior to AFM layer deposition. This is in contrast to prior methods and structures, which either manufacture the TMR structure without heating or perform heating after the AFM layer deposition.
- For example,
FIG. 1 is an operational flow diagram illustrating an example prior art process for manufacturing a magnetic recording sensor having a conventional structure without a heating/cooling process.Process 100 may begin atoperation 102, where a substrate is provided. Atoperation 104, an AFM layer is then deposited on the substrate. Atoperation 106, the substrate is heated in a chamber or station of a disk processing system. Atoperation 108, the substrate is subsequently cooled. Atoperation 110, a first pinned layer is added onto the AFM layer. When a conventional structure is not heated/cooled at all, a substrate can be provided, an AFM layer may be deposited on the substrate, and a pinned layer can be added onto the AFM layer. -
FIG. 2 illustrates an operational flow diagram illustrating anexample process 200 for manufacturing a magnetic recording sensor in accordance with various embodiments.Process 200 may begin atoperation 202 by providing a substrate. Atoperation 204, the substrate may be heated in a chamber or station of a disk processing system. Atoperation 206, an AFM layer may be deposited on the heated substrate. Atoperation 208, a first pinned layer can be added onto the AFM layer. Atoperation 210, the substrate can be cooled. Atoperation 212, a second pinned layer can be added onto the first pinned layer. -
FIG. 3 illustrates aTMR stack 300 that may be manufactured utilizingprocess 200 ofFIG. 2 in accordance with the present disclosure.TMR stack 300 may include a shield layer, a seed layer, a spacer, an AFM layer, a first pinned layer, a second pinned layer, a Ruthenium (Ru) spacer, a reference layer, a barrier, a free layer and a cap layer. In one embodiment, the AFM layer comprises Iridium Manganese (IrMn). - As illustrated in
FIG. 3 , the substrate is heated prior to depositing the AFM layer as described above atoperation 204 ofFIG. 2 . In accordance with various embodiments, the substrate may be heated at temperatures ranging from 100° C. to 300° C. In one embodiment, heating can be performed by a resistive process. In another embodiment the heating can be accomplished using a rapid thermal process. In one embodiment, heating may be performed in the same chamber that the AFM layer is deposited. In an alternative embodiment,TMR stack 300 can be transferred to another chamber after heating of the substrate and before deposition of the AFM layer. During deposition of the AFM layer,TMR stack 300 can be maintained at approximately the temperature that the substrate was heated. - After deposition of the AFM layer at the heating temperature, the first pinned layer is deposited. A cooling process may then be performed as described above at
operation 210 ofFIG. 2 . Cooling can occur at temperatures ranging between −222° C. to −2° C. In one embodiment, the temperature ofTMR stack 300 is less than 101° C. after cooling. - Table 1 illustrates the performance characteristics of a TMR reader manufactured using two conventional processes versus a TMR reader manufactured using the process disclosed in the present disclosure. The operations of each process are illustrated from left to right under the “Structure” heading. In the disclosed process, a second pinned layer (P1b) is formed in addition to the first pinned layer (P1a).
-
TABLE 1 Structure Bi-layer MOKE CIPT Heat AFM Heat Cool P1a Cool P1b Hcp Hex Tbd_50% H's Hex RA MR No Y No No Y N N 478 1954 245 3508 5546 0.46 78 No Y Yes Yes Y N N 591 2863 240 3690 6082 0.42 73 Yes Y No No Y Y Y 808 2982 288 4043 6924 0.44 87 - As illustrated in Table 1, the disclosed process manufactures a TMR reader with an improved bi-layer performance, showing a higher pinned layer coercivity (Hcp), higher pinning magnetic field strength (Hex), and higher blocking temperature distribution (Tbd) than prior conventional processes. The TMR reader manufactured in accordance with the process disclosed herein also shows an improved full stack exchange bias (H's). As illustrated in
FIG. 4 , the TMR reader also shows an improved magnetoresistance (MR) as a function of the resistance area (RA). Such improvements are evidenced, as indicated in Table 1, by the Magneto Optical Kerr Effect (MOKE) which describes changes to light reflected from a magnetized surface and therefore indicative of the magnetization structure of a material, as well as Current In Plane Tunneling (CIPT) for measuring the properties of a tunnel junction. - Table 2 and
FIG. 5 illustrate the pinning dependence of the wafer at different wafer degas pressures (p_ChE) in units of e*10−8 Torr for the TMR reader of the present disclosure and the conventional heat and cool after AFM deposition TMR reader. As illustrated in Table 2, the conventional TMR reader's coercivity and pinning magnetic field strength is highly dependent on the degas pressure. By contrast, the coercivity and pinning magnetic field strength of the TMR reader of the present disclosure has little dependence on the degas pressure. -
TABLE 2 Process Wafer ID Hcp Hex p_ChE(e−8 Torr) Old heat/cool Wafer 1 612 −2715 4.8 Wafer 2 605 −2657 5.2 Wafer 3 573 −2626 5 Wafer 4513 −2481 5.8 Wafer 5567 −2535 6 In situ heat Wafer 6 743 −3034 4.8 P1/cool/P1 Wafer 7 746 −3038 5.2 Wafer 8751 −3043 6 Wafer 9 751 −3030 6.4 Wafer 10 750 −2906 9 - The system and process for manufacturing a TMR reader provides many benefits. First, it improves the pinning strength of the TMR reader. Second, it improves the blocking temperature distribution. This in turn may improve the TMR device reliability and allow for a reduction of the thickness of the IrMn AFM layer. In one embodiment, the thickness of the layer may be reduced to 50 angstroms. Third, the in-coming wafer degas effect is substantially reduced. Fourth, due to the heating treatment prior to the AFM layer deposition, the illustrated process produces a smoother film than prior processes. It should be noted that although various embodiments described herein have been presented in the context of a TMR sensor, the systems and methods of manufacturing a recording sensor are contemplated to be applicable to other sensors, such as a current perpendicular to plane-giant magnetoresistance (CPP-GMR) sensor, to Magnetic Random Access Memory (MRAM) or other types of magnetic sensing or memory devices.
- Although described above in terms of various exemplary embodiments and implementations, it should be understood that the various features, aspects and functionality described in one or more of the individual embodiments are not limited in their applicability to the particular embodiment with which they are described, but instead can be applied, alone or in various combinations, to one or more of the other embodiments of the application, whether or not such embodiments are described and whether or not such features are presented as being a part of a described embodiment. Thus, the breadth and scope of the present application should not be limited by any of the above-described exemplary embodiments.
- Terms and phrases used in this document, and variations thereof, unless otherwise expressly stated, should be construed as open ended as opposed to limiting. As examples of the foregoing: the term “including” should be read as meaning “including, without limitation” or the like; the term “example” is used to provide exemplary instances of the item in discussion, not an exhaustive or limiting list thereof; the terms “a” or “an” should be read as meaning “at least one,” “one or more” or the like; and adjectives such as “conventional,” “traditional,” “normal,” “standard,” “known” and terms of similar meaning should not be construed as limiting the item described to a given time period or to an item available as of a given time, but instead should be read to encompass conventional, traditional, normal, or standard technologies that may be available or known now or at any time in the future Likewise, where this document refers to technologies that would be apparent or known to one of ordinary skill in the art, such technologies encompass those apparent or known to the skilled artisan now or at any time in the future.
- The presence of broadening words and phrases such as “one or more,” “at least,” “but not limited to” or other like phrases in some instances shall not be read to mean that the narrower case is intended or required in instances where such broadening phrases may be absent. The use of the term “module” does not imply that the components or functionality described or claimed as part of the module are all configured in a common package. Indeed, any or all of the various components of a module, whether control logic or other components, can be combined in a single package or separately maintained and can further be distributed in multiple groupings or packages or across multiple locations.
- Additionally, the various embodiments set forth herein are described in terms of exemplary block diagrams, flow charts and other illustrations. As will become apparent to one of ordinary skill in the art after reading this document, the illustrated embodiments and their various alternatives can be implemented without confinement to the illustrated examples. For example, block diagrams and their accompanying description should not be construed as mandating a particular architecture or configuration.
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US20210013260A1 (en) * | 2018-11-08 | 2021-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (Spin-Torque Transfer-Magnetic Random Access Memory) Devices |
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US11170806B2 (en) | 2019-12-27 | 2021-11-09 | Western Digital Technologies, Inc. | Magnetic sensor array with single TMR film plus laser annealing and characterization |
US11500042B2 (en) | 2020-02-28 | 2022-11-15 | Brown University | Magnetic sensing devices based on interlayer exchange-coupled magnetic thin films |
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2015
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