US20160002784A1 - Method and apparatus for depositing a monolayer on a three dimensional structure - Google Patents
Method and apparatus for depositing a monolayer on a three dimensional structure Download PDFInfo
- Publication number
- US20160002784A1 US20160002784A1 US14/324,907 US201414324907A US2016002784A1 US 20160002784 A1 US20160002784 A1 US 20160002784A1 US 201414324907 A US201414324907 A US 201414324907A US 2016002784 A1 US2016002784 A1 US 2016002784A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- chamber
- molecular
- plasma
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000002356 single layer Substances 0.000 title claims abstract description 53
- 238000000151 deposition Methods 0.000 title description 19
- 239000000758 substrate Substances 0.000 claims abstract description 233
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 68
- 238000012545 processing Methods 0.000 claims abstract description 46
- 230000008569 process Effects 0.000 claims abstract description 40
- 238000000605 extraction Methods 0.000 claims abstract description 36
- 150000002500 ions Chemical class 0.000 claims description 67
- 239000007789 gas Substances 0.000 claims description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 2
- 229910000070 arsenic hydride Inorganic materials 0.000 claims 1
- 239000001272 nitrous oxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 86
- 239000002019 doping agent Substances 0.000 description 20
- 238000000231 atomic layer deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 13
- 238000009826 distribution Methods 0.000 description 12
- -1 ions in an ion beam Chemical class 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910000413 arsenic oxide Inorganic materials 0.000 description 4
- 229960002594 arsenic trioxide Drugs 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000002902 bimodal effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 description 2
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- YWFYJCZTOMURIU-UHFFFAOYSA-N [Si].O=[P] Chemical compound [Si].O=[P] YWFYJCZTOMURIU-UHFFFAOYSA-N 0.000 description 1
- WECBSQZGFPFDBC-UHFFFAOYSA-N [Si].[B]=O Chemical class [Si].[B]=O WECBSQZGFPFDBC-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Definitions
- the present embodiments relate to substrate processing, and more particularly, to processing apparatus and methods for depositing layers by atomic beam or molecular beam deposition.
- topology of such devices may be up-side down, re-entrant, over-hanging, or vertical with respect to a substrate plane of a substrate in which such devices are formed.
- improved techniques may be useful that overcome limitations of conventional processing. For example, doping of substrates is often performed by ion implantation in which substrate surfaces that may be effectively exposed to dopant ions are limited by line-of-site trajectories of the ions. Accordingly, vertical surfaces, re-entrant surfaces, or over-hanging surfaces may be inaccessible to such dopant ions. It is with respect to these and other considerations that the present improvements have been needed.
- a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam comprising ions that form a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.
- a method may include providing a substrate in a first position, the substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane, the substrate feature having at least one surface that extends at a non-zero angle with respect to the substrate plane; directing an ion beam through an extraction system adjacent the substrate while in the first position, the ion beam comprising angled ions that are incident on the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, the ion beam effective to form a first sub-monolayer comprising a first species on the substrate feature including the at least one surface; and directing a molecular beam to the substrate when the substrate is in a second position when the first sub-monolayer is disposed on the substrate feature, the molecular beam being effective to form a second sub-monolayer of a second species that is configured to react with the first sub-monolayer of the first species to form a monolayer of a product material on the substrate feature including
- FIG. 1A depicts a side view of a processing apparatus in one mode of operation for delivering ion beams to a substrate according to embodiments of the disclosure
- FIG. 1B depicts the processing apparatus of FIG. 1A in another operation mode for delivering a molecular beam to a substrate;
- FIG. 1C depicts a close-up of the operation of FIG. 1A ;
- FIG. 1D depicts a close-up of the operation of FIG. 1B ;
- FIG. 2A depicts a top plan view of a processing system according to additional embodiments of the present disclosure
- FIG. 2B depicts a top plan view of an exemplary substrate stage that may be implemented in the processing system of FIG. 2A ;
- FIG. 3 depicts an exploded isometric view of a processing apparatus according to embodiments of the disclosure
- FIG. 4A to FIG. 4F depict an embodiment of the disclosure that details exemplary operations involved in a method for forming a multi-layer stack on three dimensional features using monolayer-by-monolayer growth;
- FIG. 5A to FIG. 5D depict details of a method for performing monolayer doping on a three dimensional structure according to embodiments of the disclosure.
- FIG. 6 provides a summary of representative conformal layers, ion beam constituents, and molecular beam constituents consistent with different embodiments of the disclosure.
- the present embodiments are related to apparatus and techniques for processing a substrate including forming thin layers on surface features of a substrate.
- the surface features of the substrate may extend from a substrate plane, and may form such structures as three dimensional lines, fins, pads, pillars, walls, trenches, holes, domes, bridges, cantilevers, other suspended structures, and the like.
- the embodiments are not limited in this context.
- these features may be collectively or individually referred to herein as a “three dimensional” feature or features.
- a thin layer that is formed on a substrate feature may be a layer provided for doping, insulation, for encapsulation, or for other purposes.
- novel apparatus and systems are presented that facilitate growth and etching of thin layers on three dimensional features of a substrate.
- the apparatus of the present embodiments may apply multiple processes to carry out doping of a three dimensional feature. Included among these processes are a modified atomic layer deposition or by modified molecular layer deposition process, which techniques may share characteristics common to conventional atomic layer deposition (ALD) or conventional molecular layer deposition (MLD) except where otherwise noted.
- ALD atomic layer deposition
- MLD molecular layer deposition
- the present embodiments provide novel improvements over conventional ALD and MLD that facilitate formation on three dimensional surface features in which surface topography may be severe, such as that described above.
- processes that involve formation of a doping layer using ALD or MLD may include a series of operations that form multiple layers on substrates that may include three dimensional features.
- the formation of each layer may involve multiple operations such as those characteristic of an ALD or MLD process.
- a surface of the substrate feature may first be cleaned to remove native oxide, which may involve providing a plasma using such species as hydrogen, oxygen, and/or ammonia radicals and molecular hydrides such nitrogen triflouride, arsine, and phosphine.
- a conformal plasma enhanced atomic layer deposition of dopant oxides may be performed to form a dopant oxide layer on a surface feature.
- This ALD process may involve deposition of species that include arsenic, boron, phosphorus, arsenic oxide, phosphorus oxide, boron oxides and/or doped silicon oxides such as silicon arsenic oxide, silicon phosphorus oxide, and silicon boron oxides.
- these oxides may be deposited using molecular precursors such as arsine, phosphine, and diborane together with plasma-generated atomic beams that contain a reactive gas such as hydrogen, oxygen, nitrogen, and/or ammonia.
- a sealing or encapsulating layer such as silicon nitride may be deposited using a combination of a molecular beam containing silane, for example, and another beam containing nitrogen, hydrogen, and/or ammonia.
- a layer or plurality of layers may be deposited on a substrate or etched from a substrate using a combination of angled ions and molecular beams, where the molecular beams may comprise undissociated molecules in some implementations.
- the directing of angled ions may be used in conjunction with other operations to create novel ALD or MLD processes that grow a layer or plurality of layers on a three dimensional substrate feature without the use of a mask.
- the term “layer” may refer to a sub-monolayer, a monolayer of a material, or may refer to a thin coating or film that has the thickness of many monolayers.
- a grown “layer” may be composed of a single monolayer that is formed over target portions of a substrate or may be composed of multiple monolayers.
- a layer that has the thickness of many monolayers may be formed in a monolayer-by-monolayer-by-monolayer fashion as in conventional ALD or MLD processes.
- the present embodiments also cover growth of layers having the thickness of multiple monolayers in which a layer is not grown in a monolayer-by-monolayer fashion.
- novel multichamber apparatus and systems are disclosed that facilitate rapid processing of substrates using a combination of angled ions and molecular beams. These apparatus may in particular minimize cross-contamination between different sources of ions or molecules used to process a substrate.
- Formation of a layer comprising a product material by an ALD or MLD process may involve deposition of one monolayer at a time of the product material.
- Each monolayer of the product material may include two or more different elements that together form a compound material, an alloy, or other multielement material such as silicon oxide, silicion nitride, doped oxides, or other material.
- the formation of a given monolayer may be accomplished by deposition of a sub-monolayer of a first species or component followed by providing a second sub-monolayer of a second species that reacts with the first sub-monolayer to form a monolayer of the compound.
- the term “sub-monolayer” may denote a layer of a first element that may react with a layer of a second element to form a monolayer of the compound.
- a binary compound such as silicon oxide
- the layer to be formed is deposited by the repetition of two different half-cycles. After each half-cycle, a fixed amount of reactive species supplied by a first precursor remains on the substrate surface.
- a single monolayer of a first species may be produced after a first half cycle. In the present context, this single monolayer of a first species of a compound to be formed is referred to as a “sub-monolayer” because the full monolayer of the compound requires the addition of second species to react with the first species.
- atoms of the sub-monolayer of first species may be reacted with atoms or molecules of the second species supplied in the next half cycle.
- a purge can be performed to remove any unreacted species of the depositing material.
- the total amount of material reacted in a cycle may thus be equivalent to a sub-monolayer of each of the first species or second species.
- the present embodiments provide novel apparatus that are effective to fabricate layers, films or coatings in a monolayer-by-monolayer fashion, including on three dimensional structures, in a manner that may provide more uniform layer thickness over different surfaces of a three dimensional structure as compared to that achieved by conventional ALD processes.
- FIG. 1A depicts a processing apparatus 100 arranged according to various embodiments of the disclosure.
- the processing apparatus 100 may be employed in particular to grow or etch a layer employed to etch and deposit multiple different materials on a three dimensional structure.
- this capability may be particularly suitable to perform a novel doping process for doping of a three dimensional structure that may entail deposition of multiple materials as well as etching of at least one layer.
- the deposition of each material may entail multiple operations that are performed using a combination of ion beams containing angled ions as well as molecular beams.
- the processing apparatus 100 may include a plasma chamber 102 that may be used to generate angled ions to be provided to a substrate 124 , which is held or supported by the substrate stage 111 as shown.
- the processing apparatus 100 includes a process chamber 106 that is adjacent the plasma chamber 102 and in communication with the plasma chamber 102 .
- the plasma chamber 102 may deliver angled ions to the substrate 124 in the form of an ion beam 122 when the substrate 124 is disposed adjacent the plasma chamber 102 .
- the use of angled ions is discussed in more detail below.
- angled ions refers to an assemblage of ions such as ions in an ion beam, at least some of which are characterized by trajectories that have a non-zero angle of incidence with respect to a perpendicular to a plane P of substrate 124 , as illustrated in FIG. 1C .
- angled ions may have trajectories that form a non-zero angle with respect to the Z-axis.
- the processing apparatus 100 also includes a plasma source 114 , which may include a power supply and applicator or electrode to generate a plasma according to known techniques.
- the plasma source 114 may be an in situ source or remote source, an inductively coupled plasma source, capacitively coupled plasma source, helicon source, microwave source, arc source, or any other type of plasma source. The embodiments are not limited in this context.
- gas source 116 When gas is supplied by gas source 116 to the plasma chamber 102 the plasma source 114 may ignite a plasma that provides angled ions to the substrate 124 as discussed below.
- the angled ions may be formed from molecular species such as oxygen or nitrogen, and may be highly fractionated such that the angled ions are predominantly atomic ions.
- the processing apparatus also may include a bypass 119 so that gas from the gas source 116 is fed directly to the process chamber 106 . This may be used when the substrate 124 is heated by a heater 125 to a higher temperature such as 400-700° C. Under such circumstances gas such as nitrogen, ammonia, or oxygen may react with a substrate without being ionized.
- the gas pressure in a process chamber such as the process chamber 106 may be maintained below 50 mTorr in order to minimize or eliminate gas phase collisions of ions in the ion beam 122 before the ions strike the substrate 124 .
- the substrate 124 may be scanned parallel to Y-axis with respect to the plasma chamber 102 either in a single direction, or back and forth, in order to provide uniform deposition of a layer or etching of a layer over an entire substrate, such as substrate 124 .
- the processing apparatus 100 includes a molecular chamber 104 .
- the molecular chamber 104 may transport, for example, molecular gas that is received from a molecular source 118 .
- the molecular chamber 104 may provide the molecular gas to the substrate 124 in the form of a molecular beam 128 for reaction with species such as angled ions provided by the plasma chamber 102 .
- the substrate stage 111 may be movable in a manner that transports the substrate 124 from a first position adjacent the plasma chamber 102 ( FIG. 1A ) to a second position adjacent the molecular chamber 104 .
- a baffle or wall 112 may be provided in the process chamber 106 , which may divide the process chamber 106 into a sub-chamber 108 adjacent the plasma chamber 102 and sub-chamber 110 adjacent the molecular chamber 104 .
- the substrate stage 111 may be configured to engage the wall 112 such that the substrate stage 111 and wall 112 isolate sub-chamber 110 from the sub-chamber 108 .
- a small gap may remain between the wall 112 and the substrate stage 111 .
- the wall 112 may be hollow such that the wall 112 may be differentially pumped by a pump (not shown) to evacuate gas 115 as illustrated.
- This gas may be either species from the plasma chamber 102 that are present in sub-chamber 108 when the substrate 124 is exposed to the ion beam 122 , or species that are present in the sub-chamber 110 when the substrate is exposed to the molecular beam 128 .
- the wall 112 may accordingly prevent unwanted deposition by blocking flow of molecular species such as SiH 4 , AsH 3 , and the like, from sub-chamber 110 into sub-chamber 108 .
- the wall 112 may also prevent plasma formed by the plasma chamber 102 from extending into the sub-chamber 110 ,
- the substrate stage 111 may be movable back and forth between the positions shown in FIGS. 1A and 1B such that the substrate 124 may be exposed multiple times to the ion beam 122 and molecular beam 128 . This provides an efficient manner to deposit a monolayer or plurality of monolayers of a desired material on a three dimensional substrate.
- FIG. 1C depicts a close-up of certain components shown during the operation in FIG. 1A in which an ion beam 122 is directed to the substrate 124
- FIG. 1D depicts a close-up of the operation of FIG. 1B in which the molecular beam 128 is provided to the substrate 124
- the processing apparatus 100 includes an extraction plate 120 containing an extraction aperture 126 that provides a path for ions in the plasma chamber 102 to traverse to the sub-chamber 108 .
- a plasma 130 is present in the plasma chamber 102 .
- a voltage supply 148 shown in FIG.
- an extraction voltage between 0 and 500 V may be applied to impart energy to ions of the ion beam 122 sufficient to generate surface reactions including attachment of ion species on a substrate surface, but below an energy in which significant sub-surface ion implantation takes place.
- the substrate 124 may be provided with three dimensional features such as substrate features 132 .
- the various components may not be drawn to scale, particularly in the illustration of FIG. 1C .
- features such as the extraction aperture 126 may have dimensions on the order of millimeters or centimeters, while the substrate features 132 may have dimensions on the order of micrometers or nanometers in some cases.
- the extraction aperture 126 may cause the plasma sheath boundary 140 to assume a curved shape adjacent the extraction aperture, which may result in ions of the ion beam 122 exiting the plasma 130 with trajectories that are spread over a range of angles of incidence.
- the ion beam 122 may in particular include angled ions that are effective to treat the different surfaces of the substrate features 132 , including sidewalls of the substrate features 132 , which may extend at an angle relative the substrate plane P. Such sidewalls may not be effectively treated by ions that are directed along the perpendicular to the substrate plane P.
- the ion beam 122 is shown in FIG. 1C as having three trajectories the ion beam may be characterized by an ion angular distribution.
- the term “ion angular distribution” refers to the mean angle of incidence of ions in an ion beam with respect to a reference direction such as a perpendicular to a substrate, as well as to the width of distribution or range of angles of incidence centered on the mean angle, termed “angular spread” for short.
- the ion angular distribution may be a single mode in which the peak in number of ions as a function of incidence angle is centered on a perpendicular to the plane P.
- the ion angular distribution may involve a mean angle that forms a non-zero angle with respect to a perpendicular to the plane P of the substrate 124 .
- the ion angular distribution of ion beam 122 may be a bimodal distribution of angles of incidence.
- the ion beam 122 may have trajectories where the greatest number of trajectories are centered at two angular modes.
- apparatus settings such as plasma power, plasma chamber pressure, and so forth, the separation between peaks of a bimodal distribution may be varied.
- the peak angles may set at angles between +/ ⁇ 15 degrees with respect to perpendicular to +/ ⁇ 45 degrees with respect to perpendicular in various embodiments, and in one particular embodiment at +/ ⁇ 30 degrees with respect to perpendicular to the plane P.
- a beam blocker (not shown) may be positioned inside a plasma chamber adjacent an extraction aperture, which may have the effect of creating a pair of angled ion beams that may constitute a bimodal distribution of ions.
- the extraction aperture 126 may be elongated in the X-direction to cover an entire substrate, such as substrate 124 , in that direction. Accordingly, the ion beam 122 may be directed over the entire substrate to provide uniform ion flux to the substrate by scanning the substrate stage 111 , for example, in a continuous manner along the Y-direction while the substrate 124 is adjacent the extraction aperture 126 . Moreover, once the substrate 124 is located in the sub-chamber 110 and adjacent the molecular chamber 104 , the molecular beam 128 may in some implementations be sufficiently large that the entire substrate 124 may remain stationary and still be exposed to uniform molecular flux.
- the ion beam 122 may be composed of reactive ions such as atomic oxygen or atomic nitrogen ions.
- the ion beam 122 may be composed molecular oxygen ions or molecular nitrogen ions, or may be composed of mixtures of atomic oxygen ions and molecular oxygen ions, or mixtures or molecular nitrogen ions and atomic nitrogen ions. The embodiments are not limited in this context.
- the ion beam 122 may be effective to generate a sub-monolayer 134 that covers the three dimensional surfaces of the substrate 124 including the substrate features 132 .
- the exact ion angular distribution of the ion beam 122 may be adjusted by adjusting any combination of the aforementioned parameters such as plasma power, gas pressure, extraction voltage, aperture size, or other parameters. This may be useful to tailor the treatment of surfaces such as sidewalls 144 , trench bottoms 142 , or other parts of a three dimensional feature in order to ensure proper exposure of those surface to ions of the ion beam 122 . This may result in deposition of a uniform sub-monolayer, shown as the sub-monolayer 134 .
- FIG. 1D there are shown details of a gas plate 129 that is disposed between the molecular chamber 104 and sub-chamber 110 .
- the gas plate 129 may include multiple apertures 136 that allow gas to stream out of the molecular chamber 104 and form the molecular beam 128 .
- the molecular beam 128 may include molecular species that are effective to react with the sub-monolayer 134 to form a product monolayer, shown as the monolayer 138 as shown.
- the sequence of operations shown in FIGS. 1B and 1D may constitute a process cycle that is used to form a layer of a material, such as a conformal monolayer of a nitride or a dopant oxide on a three dimensional feature.
- this sequence of operations may be repeated a desired number of times to deposit multiple monolayers according to the target level of doping and depth of dopants.
- a single monolayer of dopant oxide may be sufficient to generate a target doping profile in a substrate.
- FIG. 2A depicts a processing system 200 arranged according to further embodiments of the disclosure.
- the processing system 200 may be employed for high throughput processing of substrates having three dimensional features including ALD or MLD type processes.
- the processing system 200 includes a load station 210 , which may be used to load substrates 224 for processing in various stations or apparatus within the processing system 200 , which may take place under vacuum conditions. After loading in the load station 210 , the substrates 224 may be transferred by a robot 222 in a transfer chamber 220 to a preclean station 230 .
- the preclean station 230 may include at least one plasma chamber, shown as plasma chamber 232 , which may be configured similarly to the plasma chamber 102 .
- the plasma chamber 232 may direct angled ions such as nitrogen ions to clean surfaces of a substrate 224 including three dimensional features.
- the substrate is a semiconductor material, this may be effective in removing oxide from the surface.
- substrates 224 may be heated to drive off other impurities.
- the processing system 200 further includes a rotary chamber assembly 240 which may process the substrates 224 through multiple operations.
- the rotary chamber assembly 240 may perform a combined molecular and atomic beam deposition (MABD) processes that entails exposure to both angled ions from an ion beam and a molecular beam.
- the angled ions and molecular beam may be provided to a substrate in a manner similarly to that depicted in FIGS. 1A to 1D except as otherwise noted.
- the rotary chamber assembly 240 may include a plurality of plasma chambers, shown as plasma chambers 242 that may be disposed around an axis A that lies parallel to the Z-axis as shown.
- the plasma chambers 242 may be configured to generate the same type of ions as one another or different ions according to alternative implementations.
- ions that form in the plasma chambers 242 may be extracted through extraction apertures 244 and directed toward substrates that lie below the extraction apertures 244 (into the page).
- the extraction apertures 244 may be elongated and may additionally be aligned such that their long axes lie along the radii R that extend from the center of the rotary chamber assembly 240 .
- the gas pressure in a chamber or region that houses substrates may be maintained below 50 mTorr to avoid gas phase collisions of ions that are directed through the extraction apertures 244 to a substrate, which allows the ion angular distribution generated by the extraction aperture 244 to be maintained when the ions impact a substrate.
- FIG. 2B depicts a top plan view of an exemplary substrate stage, shown as substrate stage 260 , that may be implemented in the processing system 200 of FIG. 2A .
- the substrate stage 260 may include a plurality of recesses 262 configured to hold a plurality of substrates 224 .
- the substrate stage 260 may be configured to rotate around the axis A such that a substrate 224 may be rotatably scanned under an extraction aperture 244 . In this manner, an entire substrate may be sequentially exposed to angled ions from a narrow ion beam that is received from a plasma chamber 242 , even though the extraction aperture 244 (see FIG. 2A ) and ion beam may be much narrower than a diameter of the substrate 224 in the direction perpendicular to R.
- the rotary chamber assembly 240 may include a plurality of injectors or gas apertures 246 that may also extend radially from a center of the rotary chamber assembly. These gas apertures 246 may provide narrow molecular beams to a substrate 224 as the substrate is scanned under a given gas aperture 246 .
- the molecular beams may include such materials as beam composed of silane (SiH 4 ), arsine (AsH 3 ), phosphine (PH 3 ), or diborane (B 2 H 6 ), which are configured to cover a surface of the substrates 224 and react with species provided by the plasma chamber(s) 242 .
- FIG. 2A additionally illustrates an embodiment in which the gas apertures 246 and extraction apertures 244 are wedge shaped such that a gas aperture 246 or extraction aperture 244 is wider at larger radial distances from a center of the rotary chamber assembly 240 . This allows the rotary chamber assembly 240 to deliver a more uniform flux of molecules or angled ions across different portions of a substrate 224 regardless of their radial position when the substrate 224 is rotated under a given extraction aperture 244 or gas aperture 246 .
- the processing system 200 includes an annealing station 250 which may perform annealing of substrates 224 after the substrates 224 are coated with one or more desired layers.
- FIG. 3 depicts a variant of a rotary chamber assembly 302 according to various additional embodiments of the disclosure.
- the rotary chamber assembly 302 includes a source assembly 304 that contains a plurality of different sources.
- the sources are shown as simple three dimensional wedge shapes.
- the sources of source assembly 304 may represent at least one plasma chamber and molecular chamber.
- a plasma chamber may be disposed adjacent a molecular chamber.
- source 306 may be a plasma chamber and source 308 may be a molecular chamber, and so forth.
- the rotary chamber assembly 302 includes a top plate 310 , which may support the source assembly 304 , and may include a plurality of apertures 312 that provide communication from a given source to a substrate below. Apertures in the top plate 310 that are coupled to a plasma chamber may be configured to generate angled ions as described above.
- the top plate 310 is configured to engage a bottom plate 330 .
- the top plate 310 and bottom plate 330 may define a process chamber.
- a rotary substrate stage 320 is provided that is configured to rotate around the Z-axis with respect to the top plate 310 and source assembly 304 .
- the rotary substrate stage 320 may include a plurality of individual substrate holders, shown as the substrate holders 322 , which may be used to hold substrates 326 . In this manner, when the rotary substrate stage rotates, the substrates 326 may be scanned under plasma chamber(s) and molecular chamber(s) to generate a monolayer-by-monolayer deposition, in one example.
- the substrate holders 322 may be clamping chucks or electrostatic chucks, and may additionally be equipped with heating capability in some embodiments.
- the substrate holders 322 may be heated to at least 300° C. in some instances.
- These substrate holders 322 may be slightly recessed below other portions of the rotary substrate stage 320 .
- the rotary substrate stage 320 may also be equipped with pumping slots 324 , which may be disposed adjacent to substrate holders 322 as shown.
- the pumping slots 324 may provide a pumping path for pumping apparatus (not shown) to evacuate gas species received at an individual substrate holder 322 to provide isolation between substrates receiving plasma (ion) treatment and those receiving molecular gas exposure. This may be aided by the recessed position of the substrate holders 322 .
- the entrance of pumping slots 324 may be raised with respect to a plane of the substrate holders 322 , which may form a differentially pumped wall that is adjacent a given substrate holder 322 .
- the apparatus of the present embodiments may generate novel deposition techniques that provide improved processing of substrates having three dimensional structures to be processed.
- atomic layer deposition processes have been employed previously, the present embodiments provide advantages over conventional apparatus, which may not be ideally suited for treating substrates having surfaces features that include vertical or reentrant sidewalls, deep trenches, or other severe topology.
- angled ions may be extracted and delivered in a collisionless ion beam to a substrate over a desired angular ion distribution.
- various embodiments employ at least one operation that is configured to tailor the angle(s) of incidence of ions provided to a substrate to be coated. This allows a three dimensional substrate feature to be more uniformly coated with a sub-monolayer of a given species using angled ions to provide the given species to the substrate feature.
- FIG. 4A to FIG. 4F depict an embodiment of the disclosure that details exemplary operations involved in a method for forming a multi-layer stack on three dimensional features using monolayer-by-monolayer growth.
- FIG. 4A there is shown a substrate 402 that includes a plurality of substrate features 404 that extend above a plane P of the substrate 402 .
- the substrate features 404 may be fins of a finFET device to be fabricated.
- the substrate features 404 may have a surface layer 406 , which may be a native oxide or chemical oxide composed predominantly of silicon oxide, which is to be removed before substrate doping is performed.
- the substrate 402 is treated to remove the surface layer 406 .
- the substrate 402 may be scanned back and forth to receive alternate exposure from an ion beam 416 that may be extracted from the plasma chamber 102 , and a molecular beam 418 that may be provided by the molecular chamber 104 .
- the ion beam 416 may contain atomic nitrogen and hydrogen ions that are created when from ammonia gas (NH 3 ) is provided to the plasma chamber 102 .
- the molecular beam 418 may comprise a beam of nitrogen triflouride (NF 3 ) which is activated to remove the native oxide layer, surface layer 406 , by the presence of a sub-monolayer (not shown) of atomic hydrogen received in the ion beam 416 .
- NF 3 nitrogen triflouride
- the substrate 402 is treated to form a dopant layer or dopant oxide layer, shown as layer 420 .
- the substrate 402 may be scanned back and forth to receive alternate exposure from an ion beam 422 that may be extracted from the plasma chamber 102 , and a molecular beam 424 that may be provided by the molecular chamber 104 .
- a hydrogen, ammonia, or nitrogen/hydrogen plasma may be generated in the plasma chamber 102 , which is used to form the ion beam 422 .
- the ion beam 422 supplies atomic hydrogen angled ions to the substrate 402 .
- the substrate 402 is moved back and forth to alternately expose it to the ion beam 422 and molecular beam 424 , which may be composed of silane (SiH 4 ), arsine (AsH 3 ), phosphine (PH 3 ), diborane B 2 H 6 , or other molecular gases, depending upon the type of dopant oxide layer to be formed.
- the molecular gase(s) may be effective to react with the atomic hydrogen to form a monolayer of a given material such as a semiconductor dopant.
- the alternate exposures to the ion beam 416 and molecular beam 418 deposit a layer of arsenic material that is formed in a monolayer-by-monolayer fashion, and is highly conformal on the substrate features 404 .
- This may be represented by the layer 420 shown in FIG. 4C .
- the layer 420 may be a dopant oxide layer.
- the operations outlined in FIG. 4C may be accelerated and modified by the use of a pulsed DC or continuous substrate bias.
- a wide range of composition may be imparted into a doped oxide film represented by the layer 420 .
- the composition of the layer 420 may range, for example, from pure arsenic oxide, to silicon oxide doped with arsenic, to pure silicon oxide.
- multi-layers and gradients of doped nitrides oxides may be deposited in a similar fashion. Because angled ions may be tailored according to the geometry of the substrate features 404 , such dopant layers can be deposited with a high degree of uniformity and control on different surfaces of the substrate features 404 .
- FIG. 4D there is shown a further instance in which the substrate 402 is treated to form a silicon nitride layer that may act as a sealing layer on top of the layer 420 .
- This is shown as the sealing layer 426 .
- This layer may help drive dopants from the layer 420 into the substrate 402 .
- a nitrogen, ammonia, or nitrogen/hydrogen plasma may be created in the plasma chamber 102 to form an ion beam 422 that contains nitrogen ions including atomic nitrogen, which impinges on the substrate 402 .
- Silane or a similar gas may be introduced without plasma power in the molecular chamber 104 , to generate a molecular beam 430 .
- the substrate 402 may then be moved back and forth under the atomic nitrogen beam, that is, ion beam 428 , and the molecular beam 430 to form the sealing layer 426 .
- the substrate 402 may be scanned back and forth to receive alternate exposure from the ion beam 428 that may be extracted from the plasma chamber 102 , and a molecular beam 430 that may be provided by the molecular chamber 104 .
- the uniformity of the deposition of the sealing layer 426 may be enhanced by adjusting the angle(s) of incidence of the ion beam 428 so as to enhance the deposition rate on the sidewalls 429 (see FIG. 4B ).
- the substrate 402 may be exposed to a heat source 440 that provides heat 442 to the substrate.
- the heat source 440 may be a lamp system or other system that is effective to anneal the substrate to a desired temperature.
- the heat source 440 acts to drive in dopants from the layer 420 into the substrate features 404 .
- the layer 420 and the sealing layer 426 may be removed, for example, by known wet chemical processing using HF, buffered oxide etch (BOE), hot phosphoric acid, or other chemistries. This results in a doped three dimensional structure composed of the substrate features 404 in which a three dimensional dopant layer 444 is formed, which may be of uniform thickness on different surfaces of the substrate features 404 as shown.
- FIG. 5A to FIG. 5D depict details of a method for performing monolayer doping on a three dimensional structure according to embodiments of the disclosure.
- a substrate 500 that includes a layer stack that can be conformally deposited over severe and/or reentrant topology that may be presented by substrate features to be coated.
- a base layer 510 may represent a silicon substrate upon which a three dimensional transistor or other structure is to be formed.
- a layer stack may be formed on the silicon substrate, base layer 510 , where the layer stack is composed of a lightly doped p ⁇ silicon boron oxide layer 508 , an undoped silicon oxide layer 506 , a heavily doped n + silicon arsenic oxide layer 504 , and a silicon nitride capping layer 502 .
- the oxide layers in other embodiments it is also possible to deposit layers of pure boron, phosphorus, and arsenic.
- FIG. 5B there is shown the structure of a layer stack 520 formed after a Rapid Thermal Anneal (RTA) process is performed on the substrate 500 of FIG. 5A .
- RTA Rapid Thermal Anneal
- An n + layer 522 is formed with arsenic doping at the top region of the original base layer, base layer 510 , and a graded lightly boron doped region, p ⁇ layer 524 , is created underneath the n + layer 522 . Separation of arsenic from a boron layer may be aided by the slower solid state diffusion rate of arsenic within the base layer 510 .
- FIG. 5B Rapid Thermal Anneal
- the oxide and nitride layers are removed, such that a n + /p junction is retained in the substrate at the interface of the n + layer 522 and p ⁇ layer 524 .
- This junction can be uniformly created over difficult topology as shown in FIG. 5D , including the sidewalls 532 and trench bottom 534 of the substrate structure 530 . This is not possible using other conventional techniques such as conventional ion implantation.
- FIG. 6 provides a summary of representative conformal layers 602 , ion beam constituents 604 , and molecular beam constituents 606 that may be used to deposit the conformal layers consistent with different embodiments of the disclosure.
Abstract
In one embodiment, a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam forming a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.
Description
- The present embodiments relate to substrate processing, and more particularly, to processing apparatus and methods for depositing layers by atomic beam or molecular beam deposition.
- Many devices including electronic transistors may have three dimensional shapes that are difficult to process using conventional techniques. The topology of such devices may be up-side down, re-entrant, over-hanging, or vertical with respect to a substrate plane of a substrate in which such devices are formed. In order to process such devices such as to grow layers on such topology, improved techniques may be useful that overcome limitations of conventional processing. For example, doping of substrates is often performed by ion implantation in which substrate surfaces that may be effectively exposed to dopant ions are limited by line-of-site trajectories of the ions. Accordingly, vertical surfaces, re-entrant surfaces, or over-hanging surfaces may be inaccessible to such dopant ions. It is with respect to these and other considerations that the present improvements have been needed.
- This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended as an aid in determining the scope of the claimed subject matter.
- In one embodiment a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam comprising ions that form a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.
- In a further embodiment a method may include providing a substrate in a first position, the substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane, the substrate feature having at least one surface that extends at a non-zero angle with respect to the substrate plane; directing an ion beam through an extraction system adjacent the substrate while in the first position, the ion beam comprising angled ions that are incident on the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, the ion beam effective to form a first sub-monolayer comprising a first species on the substrate feature including the at least one surface; and directing a molecular beam to the substrate when the substrate is in a second position when the first sub-monolayer is disposed on the substrate feature, the molecular beam being effective to form a second sub-monolayer of a second species that is configured to react with the first sub-monolayer of the first species to form a monolayer of a product material on the substrate feature including the at least one surface.
-
FIG. 1A depicts a side view of a processing apparatus in one mode of operation for delivering ion beams to a substrate according to embodiments of the disclosure; -
FIG. 1B depicts the processing apparatus ofFIG. 1A in another operation mode for delivering a molecular beam to a substrate; -
FIG. 1C depicts a close-up of the operation ofFIG. 1A ; -
FIG. 1D depicts a close-up of the operation ofFIG. 1B ; -
FIG. 2A depicts a top plan view of a processing system according to additional embodiments of the present disclosure; -
FIG. 2B depicts a top plan view of an exemplary substrate stage that may be implemented in the processing system ofFIG. 2A ; -
FIG. 3 depicts an exploded isometric view of a processing apparatus according to embodiments of the disclosure; -
FIG. 4A toFIG. 4F depict an embodiment of the disclosure that details exemplary operations involved in a method for forming a multi-layer stack on three dimensional features using monolayer-by-monolayer growth; -
FIG. 5A toFIG. 5D depict details of a method for performing monolayer doping on a three dimensional structure according to embodiments of the disclosure; and -
FIG. 6 provides a summary of representative conformal layers, ion beam constituents, and molecular beam constituents consistent with different embodiments of the disclosure. - The present embodiments are related to apparatus and techniques for processing a substrate including forming thin layers on surface features of a substrate. The surface features of the substrate may extend from a substrate plane, and may form such structures as three dimensional lines, fins, pads, pillars, walls, trenches, holes, domes, bridges, cantilevers, other suspended structures, and the like. The embodiments are not limited in this context. Moreover, these features may be collectively or individually referred to herein as a “three dimensional” feature or features. A thin layer that is formed on a substrate feature may be a layer provided for doping, insulation, for encapsulation, or for other purposes.
- In various embodiments, novel apparatus and systems are presented that facilitate growth and etching of thin layers on three dimensional features of a substrate. The apparatus of the present embodiments may apply multiple processes to carry out doping of a three dimensional feature. Included among these processes are a modified atomic layer deposition or by modified molecular layer deposition process, which techniques may share characteristics common to conventional atomic layer deposition (ALD) or conventional molecular layer deposition (MLD) except where otherwise noted. The present embodiments provide novel improvements over conventional ALD and MLD that facilitate formation on three dimensional surface features in which surface topography may be severe, such as that described above.
- In some embodiments, processes that involve formation of a doping layer using ALD or MLD, may include a series of operations that form multiple layers on substrates that may include three dimensional features. In addition, the formation of each layer may involve multiple operations such as those characteristic of an ALD or MLD process. In one implementation for doping a substrate using a deposited layer formed by ALD or MLD, a surface of the substrate feature may first be cleaned to remove native oxide, which may involve providing a plasma using such species as hydrogen, oxygen, and/or ammonia radicals and molecular hydrides such nitrogen triflouride, arsine, and phosphine.
- Secondly, a conformal plasma enhanced atomic layer deposition of dopant oxides may be performed to form a dopant oxide layer on a surface feature. This ALD process may involve deposition of species that include arsenic, boron, phosphorus, arsenic oxide, phosphorus oxide, boron oxides and/or doped silicon oxides such as silicon arsenic oxide, silicon phosphorus oxide, and silicon boron oxides. In particular, these oxides may be deposited using molecular precursors such as arsine, phosphine, and diborane together with plasma-generated atomic beams that contain a reactive gas such as hydrogen, oxygen, nitrogen, and/or ammonia.
- In a subsequent operation, a sealing or encapsulating layer such as silicon nitride may be deposited using a combination of a molecular beam containing silane, for example, and another beam containing nitrogen, hydrogen, and/or ammonia. Once the native oxide is removed from a substrate feature to be doped and the dual layer of dopant oxide and sealing nitride is deposited dopants from the dopant oxide layer may be driven into the substrate feature using a known technique such as rapid thermal annealing.
- In various embodiments of the disclosure, a layer or plurality of layers may be deposited on a substrate or etched from a substrate using a combination of angled ions and molecular beams, where the molecular beams may comprise undissociated molecules in some implementations. The directing of angled ions may be used in conjunction with other operations to create novel ALD or MLD processes that grow a layer or plurality of layers on a three dimensional substrate feature without the use of a mask. As used herein, unless otherwise noted or qualified by the context, the term “layer” may refer to a sub-monolayer, a monolayer of a material, or may refer to a thin coating or film that has the thickness of many monolayers. Thus, in some instances, a grown “layer” may be composed of a single monolayer that is formed over target portions of a substrate or may be composed of multiple monolayers. Moreover, consistent with various embodiments of the disclosure, a layer that has the thickness of many monolayers may be formed in a monolayer-by-monolayer-by-monolayer fashion as in conventional ALD or MLD processes. However, the present embodiments also cover growth of layers having the thickness of multiple monolayers in which a layer is not grown in a monolayer-by-monolayer fashion.
- In various embodiments, novel multichamber apparatus and systems are disclosed that facilitate rapid processing of substrates using a combination of angled ions and molecular beams. These apparatus may in particular minimize cross-contamination between different sources of ions or molecules used to process a substrate.
- Formation of a layer comprising a product material by an ALD or MLD process may involve deposition of one monolayer at a time of the product material. Each monolayer of the product material may include two or more different elements that together form a compound material, an alloy, or other multielement material such as silicon oxide, silicion nitride, doped oxides, or other material. The formation of a given monolayer may be accomplished by deposition of a sub-monolayer of a first species or component followed by providing a second sub-monolayer of a second species that reacts with the first sub-monolayer to form a monolayer of the compound. Thus, as used herein the term “sub-monolayer” may denote a layer of a first element that may react with a layer of a second element to form a monolayer of the compound. For example, during deposition of a binary compound such as silicon oxide the layer to be formed is deposited by the repetition of two different half-cycles. After each half-cycle, a fixed amount of reactive species supplied by a first precursor remains on the substrate surface. Ideally, though not necessarily, a single monolayer of a first species may be produced after a first half cycle. In the present context, this single monolayer of a first species of a compound to be formed is referred to as a “sub-monolayer” because the full monolayer of the compound requires the addition of second species to react with the first species. Thus, atoms of the sub-monolayer of first species may be reacted with atoms or molecules of the second species supplied in the next half cycle. In each half-cycle, subsequent to supplying a given species, a purge can be performed to remove any unreacted species of the depositing material. The total amount of material reacted in a cycle may thus be equivalent to a sub-monolayer of each of the first species or second species.
- The present embodiments provide novel apparatus that are effective to fabricate layers, films or coatings in a monolayer-by-monolayer fashion, including on three dimensional structures, in a manner that may provide more uniform layer thickness over different surfaces of a three dimensional structure as compared to that achieved by conventional ALD processes.
-
FIG. 1A depicts aprocessing apparatus 100 arranged according to various embodiments of the disclosure. Theprocessing apparatus 100 may be employed in particular to grow or etch a layer employed to etch and deposit multiple different materials on a three dimensional structure. As detailed below, this capability may be particularly suitable to perform a novel doping process for doping of a three dimensional structure that may entail deposition of multiple materials as well as etching of at least one layer. In turn, the deposition of each material may entail multiple operations that are performed using a combination of ion beams containing angled ions as well as molecular beams. - As shown in
FIG. 1A theprocessing apparatus 100 may include aplasma chamber 102 that may be used to generate angled ions to be provided to asubstrate 124, which is held or supported by thesubstrate stage 111 as shown. As further shown inFIG. 1A , theprocessing apparatus 100 includes aprocess chamber 106 that is adjacent theplasma chamber 102 and in communication with theplasma chamber 102. In operation, theplasma chamber 102 may deliver angled ions to thesubstrate 124 in the form of anion beam 122 when thesubstrate 124 is disposed adjacent theplasma chamber 102. The use of angled ions is discussed in more detail below. However, in brief, the term “angled ions” as used herein refers to an assemblage of ions such as ions in an ion beam, at least some of which are characterized by trajectories that have a non-zero angle of incidence with respect to a perpendicular to a plane P ofsubstrate 124, as illustrated inFIG. 1C . For example, with reference to the Cartesian coordinate system shown, angled ions may have trajectories that form a non-zero angle with respect to the Z-axis. - The
processing apparatus 100 also includes aplasma source 114, which may include a power supply and applicator or electrode to generate a plasma according to known techniques. For example, theplasma source 114, in various embodiments, may be an in situ source or remote source, an inductively coupled plasma source, capacitively coupled plasma source, helicon source, microwave source, arc source, or any other type of plasma source. The embodiments are not limited in this context. When gas is supplied bygas source 116 to theplasma chamber 102 theplasma source 114 may ignite a plasma that provides angled ions to thesubstrate 124 as discussed below. In some embodiments, such as apparatus that uses an inductively coupled source, the angled ions may be formed from molecular species such as oxygen or nitrogen, and may be highly fractionated such that the angled ions are predominantly atomic ions. However, the embodiments are not limited in this context. The processing apparatus also may include abypass 119 so that gas from thegas source 116 is fed directly to theprocess chamber 106. This may be used when thesubstrate 124 is heated by aheater 125 to a higher temperature such as 400-700° C. Under such circumstances gas such as nitrogen, ammonia, or oxygen may react with a substrate without being ionized. - In various embodiments, the gas pressure in a process chamber such as the
process chamber 106 may be maintained below 50 mTorr in order to minimize or eliminate gas phase collisions of ions in theion beam 122 before the ions strike thesubstrate 124. This allows the angle of ions that are extracted from the plasma chamber to be controlled and maintained so that angle(s) of incidence of ions in an ion beam directed to thesubstrate 124 may be tailored for a desired result. As discussed in more detail, in various embodiments thesubstrate 124 may be scanned parallel to Y-axis with respect to theplasma chamber 102 either in a single direction, or back and forth, in order to provide uniform deposition of a layer or etching of a layer over an entire substrate, such assubstrate 124. - As further shown in
FIG. 1A , theprocessing apparatus 100 includes amolecular chamber 104. Themolecular chamber 104 may transport, for example, molecular gas that is received from amolecular source 118. Themolecular chamber 104 may provide the molecular gas to thesubstrate 124 in the form of amolecular beam 128 for reaction with species such as angled ions provided by theplasma chamber 102. As further illustrated inFIG. 1B , thesubstrate stage 111 may be movable in a manner that transports thesubstrate 124 from a first position adjacent the plasma chamber 102 (FIG. 1A ) to a second position adjacent themolecular chamber 104. - In some embodiments, and as illustrated in
FIG. 1A , a baffle orwall 112 may be provided in theprocess chamber 106, which may divide theprocess chamber 106 into a sub-chamber 108 adjacent theplasma chamber 102 and sub-chamber 110 adjacent themolecular chamber 104. Thesubstrate stage 111 may be configured to engage thewall 112 such that thesubstrate stage 111 andwall 112 isolate sub-chamber 110 from the sub-chamber 108. In some implementations a small gap may remain between thewall 112 and thesubstrate stage 111. However, thewall 112 may be hollow such that thewall 112 may be differentially pumped by a pump (not shown) to evacuategas 115 as illustrated. This gas may be either species from theplasma chamber 102 that are present insub-chamber 108 when thesubstrate 124 is exposed to theion beam 122, or species that are present in the sub-chamber 110 when the substrate is exposed to themolecular beam 128. Thewall 112 may accordingly prevent unwanted deposition by blocking flow of molecular species such as SiH4, AsH3, and the like, fromsub-chamber 110 intosub-chamber 108. Thewall 112 may also prevent plasma formed by theplasma chamber 102 from extending into the sub-chamber 110, - In one implementation the
substrate stage 111 may be movable back and forth between the positions shown inFIGS. 1A and 1B such that thesubstrate 124 may be exposed multiple times to theion beam 122 andmolecular beam 128. This provides an efficient manner to deposit a monolayer or plurality of monolayers of a desired material on a three dimensional substrate. -
FIG. 1C depicts a close-up of certain components shown during the operation inFIG. 1A in which anion beam 122 is directed to thesubstrate 124, whileFIG. 1D depicts a close-up of the operation ofFIG. 1B in which themolecular beam 128 is provided to thesubstrate 124. As shown inFIG. 1B , theprocessing apparatus 100 includes anextraction plate 120 containing anextraction aperture 126 that provides a path for ions in theplasma chamber 102 to traverse to the sub-chamber 108. In the instance shown inFIG. 1C , aplasma 130 is present in theplasma chamber 102. When a voltage supply 148 (shown inFIG. 1A ) provides an extraction voltage between theplasma chamber 102 andsubstrate stage 111, theion beam 122 may be extracted from theplasma 130 and accelerated to thesubstrate 124. In some instances an extraction voltage between 0 and 500 V may be applied to impart energy to ions of theion beam 122 sufficient to generate surface reactions including attachment of ion species on a substrate surface, but below an energy in which significant sub-surface ion implantation takes place. - As shown in
FIG. 1C , thesubstrate 124 may be provided with three dimensional features such as substrate features 132. Notably, the various components may not be drawn to scale, particularly in the illustration ofFIG. 1C . For example, features such as theextraction aperture 126 may have dimensions on the order of millimeters or centimeters, while the substrate features 132 may have dimensions on the order of micrometers or nanometers in some cases. As further shown inFIG. 1C , theextraction aperture 126 may cause theplasma sheath boundary 140 to assume a curved shape adjacent the extraction aperture, which may result in ions of theion beam 122 exiting theplasma 130 with trajectories that are spread over a range of angles of incidence. Theion beam 122 may in particular include angled ions that are effective to treat the different surfaces of the substrate features 132, including sidewalls of the substrate features 132, which may extend at an angle relative the substrate plane P. Such sidewalls may not be effectively treated by ions that are directed along the perpendicular to the substrate plane P. - It is to be noted that although the
ion beam 122 is shown inFIG. 1C as having three trajectories the ion beam may be characterized by an ion angular distribution. The term “ion angular distribution” refers to the mean angle of incidence of ions in an ion beam with respect to a reference direction such as a perpendicular to a substrate, as well as to the width of distribution or range of angles of incidence centered on the mean angle, termed “angular spread” for short. In some examples, the ion angular distribution may be a single mode in which the peak in number of ions as a function of incidence angle is centered on a perpendicular to the plane P. In other examples, the ion angular distribution may involve a mean angle that forms a non-zero angle with respect to a perpendicular to the plane P of thesubstrate 124. In particular examples, the ion angular distribution ofion beam 122 may be a bimodal distribution of angles of incidence. For example, theion beam 122 may have trajectories where the greatest number of trajectories are centered at two angular modes. In various embodiments, by controlling apparatus settings such as plasma power, plasma chamber pressure, and so forth, the separation between peaks of a bimodal distribution may be varied. For example, the peak angles may set at angles between +/−15 degrees with respect to perpendicular to +/−45 degrees with respect to perpendicular in various embodiments, and in one particular embodiment at +/−30 degrees with respect to perpendicular to the plane P. In some implementations a beam blocker (not shown) may be positioned inside a plasma chamber adjacent an extraction aperture, which may have the effect of creating a pair of angled ion beams that may constitute a bimodal distribution of ions. - Referring also to
FIGS. 1A and 1B it is further to be noted that theextraction aperture 126 may be elongated in the X-direction to cover an entire substrate, such assubstrate 124, in that direction. Accordingly, theion beam 122 may be directed over the entire substrate to provide uniform ion flux to the substrate by scanning thesubstrate stage 111, for example, in a continuous manner along the Y-direction while thesubstrate 124 is adjacent theextraction aperture 126. Moreover, once thesubstrate 124 is located in the sub-chamber 110 and adjacent themolecular chamber 104, themolecular beam 128 may in some implementations be sufficiently large that theentire substrate 124 may remain stationary and still be exposed to uniform molecular flux. - In some examples, the
ion beam 122 may be composed of reactive ions such as atomic oxygen or atomic nitrogen ions. In other examples, theion beam 122 may be composed molecular oxygen ions or molecular nitrogen ions, or may be composed of mixtures of atomic oxygen ions and molecular oxygen ions, or mixtures or molecular nitrogen ions and atomic nitrogen ions. The embodiments are not limited in this context. - As shown in
FIG. 1C theion beam 122 may be effective to generate a sub-monolayer 134 that covers the three dimensional surfaces of thesubstrate 124 including the substrate features 132. In various implementations the exact ion angular distribution of theion beam 122 may be adjusted by adjusting any combination of the aforementioned parameters such as plasma power, gas pressure, extraction voltage, aperture size, or other parameters. This may be useful to tailor the treatment of surfaces such assidewalls 144,trench bottoms 142, or other parts of a three dimensional feature in order to ensure proper exposure of those surface to ions of theion beam 122. This may result in deposition of a uniform sub-monolayer, shown as the sub-monolayer 134. - Turning now to
FIG. 1D there are shown details of agas plate 129 that is disposed between themolecular chamber 104 andsub-chamber 110. Thegas plate 129 may includemultiple apertures 136 that allow gas to stream out of themolecular chamber 104 and form themolecular beam 128. Themolecular beam 128 may include molecular species that are effective to react with the sub-monolayer 134 to form a product monolayer, shown as themonolayer 138 as shown. Together, the sequence of operations shown inFIGS. 1B and 1D may constitute a process cycle that is used to form a layer of a material, such as a conformal monolayer of a nitride or a dopant oxide on a three dimensional feature. In implementations for doping of a substrate, for example, this sequence of operations may be repeated a desired number of times to deposit multiple monolayers according to the target level of doping and depth of dopants. However, in some embodiments a single monolayer of dopant oxide may be sufficient to generate a target doping profile in a substrate. -
FIG. 2A depicts aprocessing system 200 arranged according to further embodiments of the disclosure. Theprocessing system 200 may be employed for high throughput processing of substrates having three dimensional features including ALD or MLD type processes. Theprocessing system 200 includes aload station 210, which may be used to loadsubstrates 224 for processing in various stations or apparatus within theprocessing system 200, which may take place under vacuum conditions. After loading in theload station 210, thesubstrates 224 may be transferred by arobot 222 in atransfer chamber 220 to apreclean station 230. Thepreclean station 230 may include at least one plasma chamber, shown asplasma chamber 232, which may be configured similarly to theplasma chamber 102. In particular, theplasma chamber 232 may direct angled ions such as nitrogen ions to clean surfaces of asubstrate 224 including three dimensional features. In the case in which the substrate is a semiconductor material, this may be effective in removing oxide from the surface. In addition,substrates 224 may be heated to drive off other impurities. - The
processing system 200 further includes arotary chamber assembly 240 which may process thesubstrates 224 through multiple operations. Therotary chamber assembly 240 may perform a combined molecular and atomic beam deposition (MABD) processes that entails exposure to both angled ions from an ion beam and a molecular beam. The angled ions and molecular beam may be provided to a substrate in a manner similarly to that depicted inFIGS. 1A to 1D except as otherwise noted. As illustrated inFIG. 2 , therotary chamber assembly 240 may include a plurality of plasma chambers, shown asplasma chambers 242 that may be disposed around an axis A that lies parallel to the Z-axis as shown. Theplasma chambers 242 may be configured to generate the same type of ions as one another or different ions according to alternative implementations. - From the perspective of
FIG. 2A , ions that form in theplasma chambers 242 may be extracted throughextraction apertures 244 and directed toward substrates that lie below the extraction apertures 244 (into the page). Theextraction apertures 244 may be elongated and may additionally be aligned such that their long axes lie along the radii R that extend from the center of therotary chamber assembly 240. As noted previously, the gas pressure in a chamber or region that houses substrates may be maintained below 50 mTorr to avoid gas phase collisions of ions that are directed through theextraction apertures 244 to a substrate, which allows the ion angular distribution generated by theextraction aperture 244 to be maintained when the ions impact a substrate. -
FIG. 2B depicts a top plan view of an exemplary substrate stage, shown assubstrate stage 260, that may be implemented in theprocessing system 200 ofFIG. 2A . Thesubstrate stage 260 may include a plurality ofrecesses 262 configured to hold a plurality ofsubstrates 224. As also shown inFIG. 2B , thesubstrate stage 260 may be configured to rotate around the axis A such that asubstrate 224 may be rotatably scanned under anextraction aperture 244. In this manner, an entire substrate may be sequentially exposed to angled ions from a narrow ion beam that is received from aplasma chamber 242, even though the extraction aperture 244 (seeFIG. 2A ) and ion beam may be much narrower than a diameter of thesubstrate 224 in the direction perpendicular to R. - As further shown in
FIG. 2A , therotary chamber assembly 240 may include a plurality of injectors orgas apertures 246 that may also extend radially from a center of the rotary chamber assembly. Thesegas apertures 246 may provide narrow molecular beams to asubstrate 224 as the substrate is scanned under a givengas aperture 246. In various embodiments, the molecular beams may include such materials as beam composed of silane (SiH4), arsine (AsH3), phosphine (PH3), or diborane (B2H6), which are configured to cover a surface of thesubstrates 224 and react with species provided by the plasma chamber(s) 242. -
FIG. 2A additionally illustrates an embodiment in which thegas apertures 246 andextraction apertures 244 are wedge shaped such that agas aperture 246 orextraction aperture 244 is wider at larger radial distances from a center of therotary chamber assembly 240. This allows therotary chamber assembly 240 to deliver a more uniform flux of molecules or angled ions across different portions of asubstrate 224 regardless of their radial position when thesubstrate 224 is rotated under a givenextraction aperture 244 orgas aperture 246. - As further depicted in
FIG. 2A , theprocessing system 200 includes anannealing station 250 which may perform annealing ofsubstrates 224 after thesubstrates 224 are coated with one or more desired layers. -
FIG. 3 depicts a variant of arotary chamber assembly 302 according to various additional embodiments of the disclosure. Therotary chamber assembly 302 includes asource assembly 304 that contains a plurality of different sources. For simplicity, the sources are shown as simple three dimensional wedge shapes. The sources ofsource assembly 304 may represent at least one plasma chamber and molecular chamber. In some embodiments, a plasma chamber may be disposed adjacent a molecular chamber. For example,source 306 may be a plasma chamber andsource 308 may be a molecular chamber, and so forth. - As further shown in
FIG. 3 , therotary chamber assembly 302 includes atop plate 310, which may support thesource assembly 304, and may include a plurality ofapertures 312 that provide communication from a given source to a substrate below. Apertures in thetop plate 310 that are coupled to a plasma chamber may be configured to generate angled ions as described above. - As also shown in
FIG. 3 , thetop plate 310 is configured to engage abottom plate 330. When assembled thetop plate 310 andbottom plate 330 may define a process chamber. Arotary substrate stage 320 is provided that is configured to rotate around the Z-axis with respect to thetop plate 310 andsource assembly 304. Therotary substrate stage 320 may include a plurality of individual substrate holders, shown as thesubstrate holders 322, which may be used to holdsubstrates 326. In this manner, when the rotary substrate stage rotates, thesubstrates 326 may be scanned under plasma chamber(s) and molecular chamber(s) to generate a monolayer-by-monolayer deposition, in one example. Thesubstrate holders 322 may be clamping chucks or electrostatic chucks, and may additionally be equipped with heating capability in some embodiments. For example, thesubstrate holders 322 may be heated to at least 300° C. in some instances. Thesesubstrate holders 322 may be slightly recessed below other portions of therotary substrate stage 320. - The
rotary substrate stage 320 may also be equipped with pumpingslots 324, which may be disposed adjacent tosubstrate holders 322 as shown. The pumpingslots 324 may provide a pumping path for pumping apparatus (not shown) to evacuate gas species received at anindividual substrate holder 322 to provide isolation between substrates receiving plasma (ion) treatment and those receiving molecular gas exposure. This may be aided by the recessed position of thesubstrate holders 322. In particular, the entrance of pumpingslots 324 may be raised with respect to a plane of thesubstrate holders 322, which may form a differentially pumped wall that is adjacent a givensubstrate holder 322. - As noted above, the apparatus of the present embodiments may generate novel deposition techniques that provide improved processing of substrates having three dimensional structures to be processed. Although atomic layer deposition processes have been employed previously, the present embodiments provide advantages over conventional apparatus, which may not be ideally suited for treating substrates having surfaces features that include vertical or reentrant sidewalls, deep trenches, or other severe topology. By maintaining low pressure adjacent a substrate that is below, for example, 50 mTorr, angled ions may be extracted and delivered in a collisionless ion beam to a substrate over a desired angular ion distribution. For applications that entail ALD/MLD to deposit films for doping three dimensional features, various embodiments employ at least one operation that is configured to tailor the angle(s) of incidence of ions provided to a substrate to be coated. This allows a three dimensional substrate feature to be more uniformly coated with a sub-monolayer of a given species using angled ions to provide the given species to the substrate feature.
-
FIG. 4A toFIG. 4F depict an embodiment of the disclosure that details exemplary operations involved in a method for forming a multi-layer stack on three dimensional features using monolayer-by-monolayer growth. - In
FIG. 4A there is shown asubstrate 402 that includes a plurality of substrate features 404 that extend above a plane P of thesubstrate 402. In one example, the substrate features 404 may be fins of a finFET device to be fabricated. The substrate features 404 may have asurface layer 406, which may be a native oxide or chemical oxide composed predominantly of silicon oxide, which is to be removed before substrate doping is performed. - In a subsequent set of operations shown in
FIG. 4B , thesubstrate 402 is treated to remove thesurface layer 406. In particular, thesubstrate 402 may be scanned back and forth to receive alternate exposure from anion beam 416 that may be extracted from theplasma chamber 102, and amolecular beam 418 that may be provided by themolecular chamber 104. In particular implementations, theion beam 416 may contain atomic nitrogen and hydrogen ions that are created when from ammonia gas (NH3) is provided to theplasma chamber 102. Themolecular beam 418 may comprise a beam of nitrogen triflouride (NF3) which is activated to remove the native oxide layer,surface layer 406, by the presence of a sub-monolayer (not shown) of atomic hydrogen received in theion beam 416. - Turning now to
FIG. 4C there is shown a further instance in which thesubstrate 402 is treated to form a dopant layer or dopant oxide layer, shown aslayer 420. In particular, thesubstrate 402 may be scanned back and forth to receive alternate exposure from anion beam 422 that may be extracted from theplasma chamber 102, and amolecular beam 424 that may be provided by themolecular chamber 104. In a first operation, a hydrogen, ammonia, or nitrogen/hydrogen plasma may be generated in theplasma chamber 102, which is used to form theion beam 422. In particular, theion beam 422 supplies atomic hydrogen angled ions to thesubstrate 402. Thesubstrate 402 is moved back and forth to alternately expose it to theion beam 422 andmolecular beam 424, which may be composed of silane (SiH4), arsine (AsH3), phosphine (PH3), diborane B2H6, or other molecular gases, depending upon the type of dopant oxide layer to be formed. The molecular gase(s) may be effective to react with the atomic hydrogen to form a monolayer of a given material such as a semiconductor dopant. - In one particular example, the alternate exposures to the
ion beam 416 andmolecular beam 418 deposit a layer of arsenic material that is formed in a monolayer-by-monolayer fashion, and is highly conformal on the substrate features 404. This may be represented by thelayer 420 shown inFIG. 4C . Depending upon whether oxygen is supplied in addition to or instead of hydrogen in theplasma chamber 102 to form theion beam 416, thelayer 420 may be a dopant oxide layer. As noted above, the operations outlined inFIG. 4C may be accelerated and modified by the use of a pulsed DC or continuous substrate bias. - Moreover, by adjusting the gas flows, movement rate of
substrate 402, beam angle, gas pressure, substrate temperature, and other parameters, a wide range of composition may be imparted into a doped oxide film represented by thelayer 420. The composition of thelayer 420 may range, for example, from pure arsenic oxide, to silicon oxide doped with arsenic, to pure silicon oxide. In addition multi-layers and gradients of doped nitrides oxides may be deposited in a similar fashion. Because angled ions may be tailored according to the geometry of the substrate features 404, such dopant layers can be deposited with a high degree of uniformity and control on different surfaces of the substrate features 404. - Turning now to
FIG. 4D , there is shown a further instance in which thesubstrate 402 is treated to form a silicon nitride layer that may act as a sealing layer on top of thelayer 420. This is shown as thesealing layer 426. This layer may help drive dopants from thelayer 420 into thesubstrate 402. A nitrogen, ammonia, or nitrogen/hydrogen plasma may be created in theplasma chamber 102 to form anion beam 422 that contains nitrogen ions including atomic nitrogen, which impinges on thesubstrate 402. Silane or a similar gas may be introduced without plasma power in themolecular chamber 104, to generate amolecular beam 430. Thesubstrate 402 may then be moved back and forth under the atomic nitrogen beam, that is,ion beam 428, and themolecular beam 430 to form thesealing layer 426. In particular, thesubstrate 402 may be scanned back and forth to receive alternate exposure from theion beam 428 that may be extracted from theplasma chamber 102, and amolecular beam 430 that may be provided by themolecular chamber 104. As with the formation of a dopant oxide layer inFIG. 4C , the uniformity of the deposition of thesealing layer 426 may be enhanced by adjusting the angle(s) of incidence of theion beam 428 so as to enhance the deposition rate on the sidewalls 429 (seeFIG. 4B ). - In a subsequent operation, the
substrate 402 may be exposed to aheat source 440 that providesheat 442 to the substrate. Theheat source 440 may be a lamp system or other system that is effective to anneal the substrate to a desired temperature. Theheat source 440 acts to drive in dopants from thelayer 420 into the substrate features 404. Subsequently thelayer 420 and thesealing layer 426 may be removed, for example, by known wet chemical processing using HF, buffered oxide etch (BOE), hot phosphoric acid, or other chemistries. This results in a doped three dimensional structure composed of the substrate features 404 in which a threedimensional dopant layer 444 is formed, which may be of uniform thickness on different surfaces of the substrate features 404 as shown. -
FIG. 5A toFIG. 5D depict details of a method for performing monolayer doping on a three dimensional structure according to embodiments of the disclosure. InFIG. 5A there is shown an example of asubstrate 500 that includes a layer stack that can be conformally deposited over severe and/or reentrant topology that may be presented by substrate features to be coated. In one example, abase layer 510 may represent a silicon substrate upon which a three dimensional transistor or other structure is to be formed. A layer stack may be formed on the silicon substrate,base layer 510, where the layer stack is composed of a lightly doped p− siliconboron oxide layer 508, an undopedsilicon oxide layer 506, a heavily doped n+ siliconarsenic oxide layer 504, and a siliconnitride capping layer 502. Instead of the oxide layers, in other embodiments it is also possible to deposit layers of pure boron, phosphorus, and arsenic. - Turning now to
FIG. 5B , there is shown the structure of alayer stack 520 formed after a Rapid Thermal Anneal (RTA) process is performed on thesubstrate 500 ofFIG. 5A . An n+ layer 522 is formed with arsenic doping at the top region of the original base layer,base layer 510, and a graded lightly boron doped region, p− layer 524, is created underneath the n+ layer 522. Separation of arsenic from a boron layer may be aided by the slower solid state diffusion rate of arsenic within thebase layer 510. In a subsequent operation shown inFIG. 5C , the oxide and nitride layers are removed, such that a n+/p junction is retained in the substrate at the interface of the n+ layer 522 and p− layer 524. This junction can be uniformly created over difficult topology as shown inFIG. 5D , including thesidewalls 532 andtrench bottom 534 of thesubstrate structure 530. This is not possible using other conventional techniques such as conventional ion implantation. -
FIG. 6 provides a summary of representativeconformal layers 602,ion beam constituents 604, andmolecular beam constituents 606 that may be used to deposit the conformal layers consistent with different embodiments of the disclosure. - The present disclosure is not to be limited in scope by the specific embodiments described herein. Indeed, other various embodiments of and modifications to the present disclosure, in addition to those described herein, will be apparent to those of ordinary skill in the art from the foregoing description and accompanying drawings. Thus, such other embodiments and modifications are intended to fall within the scope of the present disclosure. Furthermore, although the present disclosure has been described herein in the context of a particular implementation in a particular environment for a particular purpose, those of ordinary skill in the art will recognize that its usefulness is not limited thereto and that the present disclosure may be beneficially implemented in any number of environments for any number of purposes. Accordingly, the claims set forth below should be construed in view of the full breadth and spirit of the present disclosure as described herein.
Claims (18)
1. A processing apparatus, comprising:
a plasma chamber configured to generate a plasma;
a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane;
an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam comprising ions that form a non-zero angle with respect to a perpendicular to the substrate plane; and
a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate,
wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.
2. The processing apparatus of claim 1 , wherein the substrate is moved back and forth to alternately expose the substrate to the ion beam and to a molecular beam composed of silane (SiH4), arsine (AsH3), phosphine (PH3), or diborane B2H6.
3. The processing apparatus of claim 1 , further comprising a gas source configured to deliver a reactive gas to the plasma chamber, the reactive gas comprising at least one of: oxygen, nitrogen, nitrous oxide.
4. The processing apparatus of claim 3 further comprising a bypass to deliver the reactive gas from the gas source directly to the process chamber without entering the plasma chamber.
5. The processing apparatus of claim 4 further comprising a heater configured to heat the substrate to at least 300° C. when the reactive gas is delivered directly to the process chamber.
6. The processing apparatus of claim 1 , wherein the process chamber comprises a first sub-chamber adjacent the plasma chamber, and a second sub-chamber adjacent the molecular chamber.
7. The processing apparatus of claim 6 further comprising a substrate stage, wherein the substrate stage is configured to transport the substrate between the first sub-chamber and second sub-chamber through a seal that restricts gas communication first sub-chamber and second sub-chamber.
8. The processing apparatus of claim 1 further comprising a rotary substrate stage wherein the rotary substrate stage is disposed within the process chamber and configured to move the substrate from a first position adjacent the plasma chamber to a second position adjacent the molecular chamber.
9. The processing apparatus of claim 8 wherein the extraction system comprises an extraction aperture having a wedge shape, wherein the molecular chamber comprises a set of injectors that define a wedge shape.
10. The processing apparatus of claim 8 wherein the plasma chamber defines a wedge shape and molecular chamber defines a wedge shaped chamber.
11. The processing apparatus of claim 8 wherein the substrate stage is configured to hold a plurality of substrates.
12. The processing apparatus of claim 1 further comprising a second plasma chamber configured to deliver second ion species and a second molecular chamber configured to deliver second molecular species.
13. The processing apparatus of claim 1 , wherein the plasma chamber, molecular chamber and process chamber are arranged in a rotary chamber assembly, wherein the substrate is configured to rotate between a first position adjacent the plasma chamber and a second position adjacent the molecular chamber.
14. The processing apparatus of claim 13 , further comprising a rotary substrate stage comprising a plurality of substrate holders and a plurality of pumping slots, wherein the rotary substrate stage is disposed within the process chamber.
15. The processing apparatus of claim 13 , wherein the ion beam is a first ion beam, the plasma chamber is a first plasma chamber, and the molecular chamber is a first molecular chamber, wherein the rotary chamber assembly comprises:
a second plasma chamber;
a second molecular chamber; and
an extraction system adjacent the first plasma chamber and the second plasma chamber, the extraction system comprising a first extraction aperture that is coupled to the first plasma chamber to direct the first ion beam to the substrate, and a second extraction aperture that is coupled to the second plasma chamber to direct a second ion beam to the substrate.
16. The processing apparatus of claim 1 , wherein the extraction system comprises an extraction aperture that generates the ion beam, the extraction aperture configured to modify a shape of a plasma sheath boundary adjacent the extraction aperture, wherein the ions exit the plasma sheath boundary at the non-zero angle.
17. A method, comprising:
providing a substrate in a first position, the substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane, the substrate feature having at least one surface that extends at a non-zero angle with respect to the substrate plane;
directing an ion beam through an extraction system adjacent the substrate while in the first position, the ion beam comprising angled ions that are incident on the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, the ion beam effective to form a first sub-monolayer comprising a first species on the substrate feature including the at least one surface; and
directing a molecular beam to the substrate when the substrate is in a second position when the first sub-monolayer is disposed on the substrate feature, the molecular beam being effective to form a second sub-monolayer of a second species that is configured to react with the first sub-monolayer of the first species to form a monolayer of a product material on the substrate feature including the at least one surface.
18. The method of claim 17 , further comprising transporting the substrate from the first position, wherein the substrate is in a first sub-chamber of a process chamber in the first position and the substrate is in a second sub-chamber of the process chamber in the second position that is isolated from the first sub-chamber.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/324,907 US20160002784A1 (en) | 2014-07-07 | 2014-07-07 | Method and apparatus for depositing a monolayer on a three dimensional structure |
US14/336,893 US9453279B2 (en) | 2014-07-07 | 2014-07-21 | Method for selectively depositing a layer on a three dimensional structure |
US14/336,886 US9929015B2 (en) | 2014-07-07 | 2014-07-21 | High efficiency apparatus and method for depositing a layer on a three dimensional structure |
TW104121573A TWI659457B (en) | 2014-07-07 | 2015-07-03 | Method of selectively doping three dimensional substrate feature on substrate |
PCT/US2015/039345 WO2016007487A1 (en) | 2014-07-07 | 2015-07-07 | Method for selectively depositing a layer on a three dimensional structure |
US15/260,442 US9847228B2 (en) | 2014-07-07 | 2016-09-09 | Method for selectively depositing a layer on a three dimensional structure |
US15/899,969 US11031247B2 (en) | 2014-07-07 | 2018-02-20 | Method and apparatus for depositing a monolayer on a three dimensional structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/324,907 US20160002784A1 (en) | 2014-07-07 | 2014-07-07 | Method and apparatus for depositing a monolayer on a three dimensional structure |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/336,886 Continuation US9929015B2 (en) | 2014-07-07 | 2014-07-21 | High efficiency apparatus and method for depositing a layer on a three dimensional structure |
US14/336,893 Continuation US9453279B2 (en) | 2014-07-07 | 2014-07-21 | Method for selectively depositing a layer on a three dimensional structure |
US15/899,969 Division US11031247B2 (en) | 2014-07-07 | 2018-02-20 | Method and apparatus for depositing a monolayer on a three dimensional structure |
Publications (1)
Publication Number | Publication Date |
---|---|
US20160002784A1 true US20160002784A1 (en) | 2016-01-07 |
Family
ID=55016608
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/324,907 Abandoned US20160002784A1 (en) | 2014-07-07 | 2014-07-07 | Method and apparatus for depositing a monolayer on a three dimensional structure |
US14/336,893 Active 2034-08-07 US9453279B2 (en) | 2014-07-07 | 2014-07-21 | Method for selectively depositing a layer on a three dimensional structure |
US14/336,886 Active 2035-07-08 US9929015B2 (en) | 2014-07-07 | 2014-07-21 | High efficiency apparatus and method for depositing a layer on a three dimensional structure |
US15/260,442 Active US9847228B2 (en) | 2014-07-07 | 2016-09-09 | Method for selectively depositing a layer on a three dimensional structure |
US15/899,969 Active 2035-01-28 US11031247B2 (en) | 2014-07-07 | 2018-02-20 | Method and apparatus for depositing a monolayer on a three dimensional structure |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/336,893 Active 2034-08-07 US9453279B2 (en) | 2014-07-07 | 2014-07-21 | Method for selectively depositing a layer on a three dimensional structure |
US14/336,886 Active 2035-07-08 US9929015B2 (en) | 2014-07-07 | 2014-07-21 | High efficiency apparatus and method for depositing a layer on a three dimensional structure |
US15/260,442 Active US9847228B2 (en) | 2014-07-07 | 2016-09-09 | Method for selectively depositing a layer on a three dimensional structure |
US15/899,969 Active 2035-01-28 US11031247B2 (en) | 2014-07-07 | 2018-02-20 | Method and apparatus for depositing a monolayer on a three dimensional structure |
Country Status (1)
Country | Link |
---|---|
US (5) | US20160002784A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160097122A1 (en) * | 2014-10-03 | 2016-04-07 | Applied Materials, Inc. | Top lamp module for carousel deposition chamber |
US20180286746A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Selective deposition of wcn barrier/adhesion layer for interconnect |
US10176983B1 (en) * | 2017-10-11 | 2019-01-08 | Lawrence Livermore National Security, Llc | Charged particle induced deposition of boron containing material |
US20190027396A1 (en) * | 2017-07-24 | 2019-01-24 | Varian Semiconductor Equipment Associates, Inc. | Techniques and Structure for Forming Thin Silicon-on-Insulator Materials |
US10643906B2 (en) | 2017-12-15 | 2020-05-05 | Micron Technology, Inc. | Methods of forming a transistor and methods of forming an array of memory cells |
CN111868298A (en) * | 2019-02-28 | 2020-10-30 | 东芝三菱电机产业系统株式会社 | Film forming apparatus |
US11088014B2 (en) * | 2016-12-15 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, method, and multi-wafer deposition apparatus |
JP2023506309A (en) * | 2019-12-18 | 2023-02-15 | 江蘇菲沃泰納米科技股▲フン▼有限公司 | Coating equipment and its coating method |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015171335A1 (en) * | 2014-05-06 | 2015-11-12 | Applied Materials, Inc. | Directional treatment for multi-dimensional device processing |
US9589769B2 (en) * | 2014-07-09 | 2017-03-07 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for efficient materials use during substrate processing |
US9460961B2 (en) * | 2014-08-05 | 2016-10-04 | Varian Semiconductor Equipment Associates, Inc. | Techniques and apparatus for anisotropic metal etching |
US10204909B2 (en) * | 2015-12-22 | 2019-02-12 | Varian Semiconductor Equipment Associates, Inc. | Non-uniform gate oxide thickness for DRAM device |
US9589965B1 (en) * | 2016-01-22 | 2017-03-07 | Globalfoundries Inc. | Controlling epitaxial growth over eDRAM deep trench and eDRAM so formed |
US9941094B1 (en) * | 2017-02-01 | 2018-04-10 | Fei Company | Innovative source assembly for ion beam production |
US10242879B2 (en) * | 2017-04-20 | 2019-03-26 | Lam Research Corporation | Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition |
US10164065B1 (en) * | 2017-05-31 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Film deposition for 3D semiconductor structure |
US11049719B2 (en) * | 2017-08-30 | 2021-06-29 | Applied Materials, Inc. | Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal |
US11127593B2 (en) | 2018-05-18 | 2021-09-21 | Varian Semiconductor Equipment Associates, Inc. | Techniques and apparatus for elongation patterning using angled ion beams |
US20200027733A1 (en) * | 2018-07-20 | 2020-01-23 | Varian Semiconductor Equipment Associates, Inc. | Directional deposition for patterning three-dimensional structures |
US11640909B2 (en) | 2018-12-14 | 2023-05-02 | Applied Materials, Inc. | Techniques and apparatus for unidirectional hole elongation using angled ion beams |
US11956978B2 (en) * | 2020-09-03 | 2024-04-09 | Applied Materials, Inc. | Techniques and device structure based upon directional seeding and selective deposition |
US11380691B1 (en) * | 2021-04-14 | 2022-07-05 | Applied Materials, Inc. | CMOS over array of 3-D DRAM device |
US20230083497A1 (en) * | 2021-09-15 | 2023-03-16 | Applied Materials, Inc. | Uniform plasma linear ion source |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020046705A1 (en) * | 2000-08-31 | 2002-04-25 | Gurtej Sandhu | Atomic layer doping apparatus and method |
US6387207B1 (en) * | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
US20040033679A1 (en) * | 2002-05-24 | 2004-02-19 | Massachusetts Institute Of Technology | Patterning of nanostructures |
US20040187784A1 (en) * | 2003-03-28 | 2004-09-30 | Fluens Corporation | Continuous flow deposition system |
US20060068104A1 (en) * | 2003-06-16 | 2006-03-30 | Tokyo Electron Limited | Thin-film formation in semiconductor device fabrication process and film deposition apparatus |
US20070000444A1 (en) * | 2005-07-04 | 2007-01-04 | Seiko Epson Corporation | Vacuum evaporation apparatus and method of producing electro-optical device |
US20080026162A1 (en) * | 2006-07-29 | 2008-01-31 | Dickey Eric R | Radical-enhanced atomic layer deposition system and method |
US20100126964A1 (en) * | 2008-11-25 | 2010-05-27 | Oregon Physics, Llc | High voltage isolation and cooling for an inductively coupled plasma ion source |
JP2012097624A (en) * | 2010-11-01 | 2012-05-24 | Sanyo Electric Co Ltd | Electric fan |
US20120222616A1 (en) * | 2009-11-18 | 2012-09-06 | Wonik Ips Co., Ltd. | Shower head assembly and thin film deposition apparatus comprising same |
US20130196078A1 (en) * | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Multi-Chamber Substrate Processing System |
US20130210238A1 (en) * | 2012-01-31 | 2013-08-15 | Joseph Yudovsky | Multi-Injector Spatial ALD Carousel and Methods of Use |
US20150087140A1 (en) * | 2012-04-23 | 2015-03-26 | Tokyo Electron Limited | Film forming method, film forming device, and film forming system |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100333237B1 (en) * | 1993-10-29 | 2002-09-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Contaminant reduction improvements for plasma etch chambers |
US20030155079A1 (en) * | 1999-11-15 | 2003-08-21 | Andrew D. Bailey | Plasma processing system with dynamic gas distribution control |
US6924561B1 (en) | 2003-12-08 | 2005-08-02 | Advanced Micro Devices, Inc. | SRAM formation using shadow implantation |
US7868305B2 (en) | 2005-03-16 | 2011-01-11 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion beam angle spread control |
KR20070024965A (en) | 2005-08-31 | 2007-03-08 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
KR100739653B1 (en) | 2006-05-13 | 2007-07-13 | 삼성전자주식회사 | Fin field effect transistor and method for forming the same |
US7838913B2 (en) | 2008-05-28 | 2010-11-23 | International Business Machines Corporation | Hybrid FET incorporating a finFET and a planar FET |
US8237136B2 (en) | 2009-10-08 | 2012-08-07 | Tel Epion Inc. | Method and system for tilting a substrate during gas cluster ion beam processing |
US8785286B2 (en) | 2010-02-09 | 2014-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Techniques for FinFET doping |
US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
JP5740203B2 (en) * | 2010-05-26 | 2015-06-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing gas supply structure thereof |
US20120207944A1 (en) | 2010-08-17 | 2012-08-16 | Dudley Sean Finch | Fabrication and selective patterning of thin films using ion beam-enhanced atomic and molecular layer deposition |
US8716682B2 (en) | 2011-04-04 | 2014-05-06 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for multiple slot ion implantation |
TWI541377B (en) | 2011-11-04 | 2016-07-11 | Asm國際股份有限公司 | Methods for forming doped silicon oxide thin films |
CN104160511B (en) | 2011-12-30 | 2017-06-23 | 英特尔公司 | Circulating type trench contact portion's structure and preparation method |
US8652932B2 (en) * | 2012-04-17 | 2014-02-18 | International Business Machines Corporation | Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures |
US9218973B2 (en) | 2012-06-15 | 2015-12-22 | Applied Materials, Inc. | Methods of doping substrates with ALD |
-
2014
- 2014-07-07 US US14/324,907 patent/US20160002784A1/en not_active Abandoned
- 2014-07-21 US US14/336,893 patent/US9453279B2/en active Active
- 2014-07-21 US US14/336,886 patent/US9929015B2/en active Active
-
2016
- 2016-09-09 US US15/260,442 patent/US9847228B2/en active Active
-
2018
- 2018-02-20 US US15/899,969 patent/US11031247B2/en active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6387207B1 (en) * | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
US20020046705A1 (en) * | 2000-08-31 | 2002-04-25 | Gurtej Sandhu | Atomic layer doping apparatus and method |
US20040033679A1 (en) * | 2002-05-24 | 2004-02-19 | Massachusetts Institute Of Technology | Patterning of nanostructures |
US20040187784A1 (en) * | 2003-03-28 | 2004-09-30 | Fluens Corporation | Continuous flow deposition system |
US20060068104A1 (en) * | 2003-06-16 | 2006-03-30 | Tokyo Electron Limited | Thin-film formation in semiconductor device fabrication process and film deposition apparatus |
US20070000444A1 (en) * | 2005-07-04 | 2007-01-04 | Seiko Epson Corporation | Vacuum evaporation apparatus and method of producing electro-optical device |
US20080026162A1 (en) * | 2006-07-29 | 2008-01-31 | Dickey Eric R | Radical-enhanced atomic layer deposition system and method |
US20100126964A1 (en) * | 2008-11-25 | 2010-05-27 | Oregon Physics, Llc | High voltage isolation and cooling for an inductively coupled plasma ion source |
US20120222616A1 (en) * | 2009-11-18 | 2012-09-06 | Wonik Ips Co., Ltd. | Shower head assembly and thin film deposition apparatus comprising same |
JP2012097624A (en) * | 2010-11-01 | 2012-05-24 | Sanyo Electric Co Ltd | Electric fan |
US20130196078A1 (en) * | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Multi-Chamber Substrate Processing System |
US20130210238A1 (en) * | 2012-01-31 | 2013-08-15 | Joseph Yudovsky | Multi-Injector Spatial ALD Carousel and Methods of Use |
US20150087140A1 (en) * | 2012-04-23 | 2015-03-26 | Tokyo Electron Limited | Film forming method, film forming device, and film forming system |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10273578B2 (en) * | 2014-10-03 | 2019-04-30 | Applied Materials, Inc. | Top lamp module for carousel deposition chamber |
US20160097122A1 (en) * | 2014-10-03 | 2016-04-07 | Applied Materials, Inc. | Top lamp module for carousel deposition chamber |
US11088014B2 (en) * | 2016-12-15 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, method, and multi-wafer deposition apparatus |
US20180286746A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Selective deposition of wcn barrier/adhesion layer for interconnect |
US10283404B2 (en) * | 2017-03-30 | 2019-05-07 | Lam Research Corporation | Selective deposition of WCN barrier/adhesion layer for interconnect |
US20190027396A1 (en) * | 2017-07-24 | 2019-01-24 | Varian Semiconductor Equipment Associates, Inc. | Techniques and Structure for Forming Thin Silicon-on-Insulator Materials |
US10600675B2 (en) * | 2017-07-24 | 2020-03-24 | Varian Semiconductor Equipment Associates, Inc. | Techniques and structure for forming thin silicon-on-insulator materials |
US10176983B1 (en) * | 2017-10-11 | 2019-01-08 | Lawrence Livermore National Security, Llc | Charged particle induced deposition of boron containing material |
US10643906B2 (en) | 2017-12-15 | 2020-05-05 | Micron Technology, Inc. | Methods of forming a transistor and methods of forming an array of memory cells |
CN111868298A (en) * | 2019-02-28 | 2020-10-30 | 东芝三菱电机产业系统株式会社 | Film forming apparatus |
JP2023506309A (en) * | 2019-12-18 | 2023-02-15 | 江蘇菲沃泰納米科技股▲フン▼有限公司 | Coating equipment and its coating method |
JP2023506577A (en) * | 2019-12-18 | 2023-02-16 | 江蘇菲沃泰納米科技股▲フン▼有限公司 | Coating equipment and its coating method |
JP2023506563A (en) * | 2019-12-18 | 2023-02-16 | 江蘇菲沃泰納米科技股▲フン▼有限公司 | Coating equipment and its coating method |
EP4079932A4 (en) * | 2019-12-18 | 2023-10-11 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating device and coating method therefor |
JP7403657B2 (en) | 2019-12-18 | 2023-12-22 | 江蘇菲沃泰納米科技股▲フン▼有限公司 | Coating equipment and its coating method |
JP7411093B2 (en) | 2019-12-18 | 2024-01-10 | 江蘇菲沃泰納米科技股▲フン▼有限公司 | Coating equipment and its coating method |
US11898248B2 (en) | 2019-12-18 | 2024-02-13 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and coating method |
Also Published As
Publication number | Publication date |
---|---|
US9847228B2 (en) | 2017-12-19 |
US20160005607A1 (en) | 2016-01-07 |
US11031247B2 (en) | 2021-06-08 |
US20180182627A1 (en) | 2018-06-28 |
US20160379827A1 (en) | 2016-12-29 |
US9453279B2 (en) | 2016-09-27 |
US9929015B2 (en) | 2018-03-27 |
US20160005594A1 (en) | 2016-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11031247B2 (en) | Method and apparatus for depositing a monolayer on a three dimensional structure | |
JP6629312B2 (en) | Method and apparatus for selective deposition | |
JP7293211B2 (en) | High energy atomic layer etching | |
CN105917445B (en) | Self-aligned double patterning with spatial atomic layer deposition | |
TWI603388B (en) | Selective atomic layer deposition process utilizing patterned self assembled monolayers for 3d structure semiconductor applications | |
US9570307B2 (en) | Methods of doping substrates with ALD | |
JP2019511118A (en) | Selective deposition of silicon nitride films for spacers | |
US20120263887A1 (en) | Technique and apparatus for ion-assisted atomic layer deposition | |
TWI675397B (en) | Selective deposition utilizing masks and directional plasma treatment | |
CN108778739A (en) | Method and apparatus for selective dry-etching | |
US8975603B2 (en) | Systems and methods for plasma doping microfeature workpieces | |
CN107949918B (en) | Conformal doping in 3D Si structures using conformal dopant deposition | |
KR102405729B1 (en) | Geometric Selective Deposition of Dielectric Films Using Low Frequency Bias | |
WO2016007487A1 (en) | Method for selectively depositing a layer on a three dimensional structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., M Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OMSTEAD, THOMAS R.;REEL/FRAME:033445/0954 Effective date: 20140801 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |