US2865793A - Method of making electrical connection to semi-conductive selenide or telluride - Google Patents
Method of making electrical connection to semi-conductive selenide or telluride Download PDFInfo
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- US2865793A US2865793A US549754A US54975455A US2865793A US 2865793 A US2865793 A US 2865793A US 549754 A US549754 A US 549754A US 54975455 A US54975455 A US 54975455A US 2865793 A US2865793 A US 2865793A
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- bivalent metal
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- 150000003346 selenoethers Chemical class 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 229910052753 mercury Inorganic materials 0.000 claims description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 239000002244 precipitate Substances 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 claims 1
- 239000010970 precious metal Substances 0.000 description 18
- 239000000243 solution Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000012266 salt solution Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 5
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 101710134784 Agnoprotein Proteins 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004772 tellurides Chemical class 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 159000000011 group IA salts Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 150000003283 rhodium Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Definitions
- This invention relates to a method of making an electrical connection to a semi-conductive body, and, in particular, to the application of precious-metal layers to bodies of a semi-conductive selenide or telluride of a bivalent metal.
- the compounds concerned are the selenides and tellurides of the metals Zn, Cd, Hg, Sn and Pb.
- the nature of the contact i. e. whether it is ohmic or rectifying, is of minor importance.
- the invention permits of producing ohmic or rectifying contacts in a very simple manner and under particular circumstances.
- the aforesaid selenides and tellurides of bivalent metals are brought into contact with a solution of an, elementary precious-metal salt, so that ions of the bivalent metal emerge from the body, i. e., are dissolved in the solution, and a precipitate of the precious-metal is formed on the surface depleted of the bivalent metal.
- precious metals can be used which are lower in the electromotive series than the bivalent metal in the compound that is afiected.
- the properties of the precious-metal are less favourable, for example if the specific resistance is too high, or if the permeability for particular wavelengths of the light is too small, the precious-metal may be removed wholly or partly and a different metal, for example iridium, may be applied, since the ohmic or rectifying connection resulting actually exists between the surface layer of the body that has lost bivalent metal ions by reason of reaction with the solution, and the subjacent semi-conductive material.
- a different metal for example iridium
- This method is performed in a very simple manner if mercury is applied, since the mercury, subsequent to its deposition, can be removed in a very simple manner.
- the strength and pH of the precious-metal solution is of minor importance. Solutions of /2, and 50% of precious-metal salt, acidified or not, even to a HCl-content of 20%, yield the same results.
- solutions of AgNO AuCl PtCl RhCl OsCl PdCl or IrCl Salts in which the precious-metal ion is contained in complex form, for instance KAuCl K PtCl do not yield, however, the desired precious-metal layer.
- the precious-metal ion is contained in complex form, or the precious-metal precipitates in the form of a hydroxide.
- organic salt solutions are dissociated too little for obtaining a good result. Thus these are also not satisfactory.
- the time of treatment is not important for the nature of the contact, whether it is ohmic or rectifying. As the time of treatment is longer, the contact penetrates deeper into the semi-conductive body. Solutions of salts of Hg and Au yield rapidly a satisfactorily adhering layer at room temperature. With a treatment with a solution of salts of Pt, Rh, or Ir it is desirable to carry out a slight heating, for example to 50 C. for a few minutes.
- Example I A plate of p-type CdTe is provided on both sides with a gold contact by applying thereto a drop of a 10% AuCl solution, by causing it to react for about one minute,
- Example II A plate of p-conductive HgSe is provided with a gold contact by causing a drop of a 10% AuCl solution to react therewith.
- Example IV An n-conductive CdTe-crystal plate with about 3 X10 charge carriers per cm. is provided on one side with an ohmic contact by fusing thereto indium in a nitrogen atmosphere with 10% of hydrogen. The other side of 'the plate is treated with a 10% AgNO solution. Sub
- the silver layer or underlying rectifying connection Upon exposure to about 2700 lux from a tungsten tape lamp (colour temperature 2800 K.) the silver layer or underlying rectifying connection exhibits a photo-electromotive force and/or a photo-current.
- the short-circuit current is 140 a. and the voltage is 395 mv. with an infinite external resistance.
- the maximum sensitivity lies at a wavelength of about 7800 A.
- Example V To a plate of CdTe with n-conductivity and a specific resistance of 0.1 ohm cm. is applied, by treating it with a solution of AuCl a layer of gold. This layer is removed with the aid of a solution of potassium-cyanide, after which such a thin layer of iridium is applied that of the visible light is permitted to pass. It is found that a short-circuit current may be obtained, which is five times higher than that obtainable by means of a gold electrode.
Description
Dec. 23, 1958 D DE NOBEL 2,865,793
METHOD OF MAKING ELECTRICAL CONNECTION TO SEMI-CONDUCTIVE SELENIDE OR TELLURIDE Filed Nov. 29, 1955 k t 8: 6+ImV' .H ul
Claims priority, application Netherlands December 6, 1954 9 Claims. (Cl. 117-200) This invention relates to a method of making an electrical connection to a semi-conductive body, and, in particular, to the application of precious-metal layers to bodies of a semi-conductive selenide or telluride of a bivalent metal.
The compounds concerned are the selenides and tellurides of the metals Zn, Cd, Hg, Sn and Pb.
For the application of precious-metal layers various methods are known, for example application by evaporation, by burning on suspensions of silver or decomposable silver compounds and by electrolytic means.
With such metal layers the nature of the contact, i. e. whether it is ohmic or rectifying, is of minor importance. The invention permits of producing ohmic or rectifying contacts in a very simple manner and under particular circumstances.
In accordance with the invention the aforesaid selenides and tellurides of bivalent metals are brought into contact with a solution of an, elementary precious-metal salt, so that ions of the bivalent metal emerge from the body, i. e., are dissolved in the solution, and a precipitate of the precious-metal is formed on the surface depleted of the bivalent metal. Naturally only those precious metals can be used which are lower in the electromotive series than the bivalent metal in the compound that is afiected.
It is found that the contact obtained is ohmic on ptype material and rectifying on n-type material.
If with such rectifying contacts the properties of the precious-metal are less favourable, for example if the specific resistance is too high, or if the permeability for particular wavelengths of the light is too small, the precious-metal may be removed wholly or partly and a different metal, for example iridium, may be applied, since the ohmic or rectifying connection resulting actually exists between the surface layer of the body that has lost bivalent metal ions by reason of reaction with the solution, and the subjacent semi-conductive material.
This method is performed in a very simple manner if mercury is applied, since the mercury, subsequent to its deposition, can be removed in a very simple manner.
The strength and pH of the precious-metal solution is of minor importance. Solutions of /2, and 50% of precious-metal salt, acidified or not, even to a HCl-content of 20%, yield the same results. For carrying out the invention use may be made for example of solutions of AgNO AuCl PtCl RhCl OsCl PdCl or IrCl Salts, in which the precious-metal ion is contained in complex form, for instance KAuCl K PtCl do not yield, however, the desired precious-metal layer.
In the alkaline salts, the precious-metal ion is contained in complex form, or the precious-metal precipitates in the form of a hydroxide. As is the case with many such processes, organic salt solutions are dissociated too little for obtaining a good result. Thus these are also not satisfactory.
The time of treatment is not important for the nature of the contact, whether it is ohmic or rectifying. As the time of treatment is longer, the contact penetrates deeper into the semi-conductive body. Solutions of salts of Hg and Au yield rapidly a satisfactorily adhering layer at room temperature. With a treatment with a solution of salts of Pt, Rh, or Ir it is desirable to carry out a slight heating, for example to 50 C. for a few minutes.
Several specific examples are described below, with some of the results obtained described in connection with the two graphs in the accompanying drawing.
Example I A plate of p-type CdTe is provided on both sides with a gold contact by applying thereto a drop of a 10% AuCl solution, by causing it to react for about one minute,
' and by rinsing it off subsequently. The contacts obtained appear not to have any deviation from the ohmic nature even at low voltages. A like result is obtained by means of a solution of 0.5% of AuCl even if it is acidified to for example 20% of hydrochloric acid.
Example II Example III A plate of p-conductive HgSe is provided with a gold contact by causing a drop of a 10% AuCl solution to react therewith.
Example IV An n-conductive CdTe-crystal plate with about 3 X10 charge carriers per cm. is provided on one side with an ohmic contact by fusing thereto indium in a nitrogen atmosphere with 10% of hydrogen. The other side of 'the plate is treated with a 10% AgNO solution. Sub
sequent to the reaction of the solution for one minute a silver layer is formed and a rectifying connection.
In this manner a rectifier is obtained, which has a current voltage characteristic curve as shown in Fig. 1.
Upon exposure to about 2700 lux from a tungsten tape lamp (colour temperature 2800 K.) the silver layer or underlying rectifying connection exhibits a photo-electromotive force and/or a photo-current. The short-circuit current is 140 a. and the voltage is 395 mv. with an infinite external resistance.
As is evident from Fig. 2, which shows the relationship of the photo-electromotive force (referred to by I) and of the photo-current with (referred to by II) respect to the wavelength of the incident light, the maximum sensitivity lies at a wavelength of about 7800 A.
Example V To a plate of CdTe with n-conductivity and a specific resistance of 0.1 ohm cm. is applied, by treating it with a solution of AuCl a layer of gold. This layer is removed with the aid of a solution of potassium-cyanide, after which such a thin layer of iridium is applied that of the visible light is permitted to pass. It is found that a short-circuit current may be obtained, which is five times higher than that obtainable by means of a gold electrode.
What is claimed is:
l. A method of making an electrical connection to a semiconductive body constituted of a member selected from the group consisting of a bivalent metal selenide J and a bivalent metal telluride, said bivalent metal being selected from the group consisting of zinc, cadmium, mercury, tin and lead, which comprises bringing said body into reactive engagement with a solution of a precious metal selected from the group consisting of gold, silver, mercury, platinum, rhodium, osmium, palladium and iridium thereby to dissolve out some bivalent metal from a surface portion of said body and precipitate on the said surface portion from which bivalent metal was dissolved said precious metal.
2. A method of making an electrical connection to a semi-conductive body constituted of a member selected from the group consisting of a bivalent metal selenide and a bivalent metal telluride, said bivalent metal being selected from the group consisting of zinc, cadmium, mercury, tin and lead, which comprises bringing said body into reactive engagement with an elementary, inorganic, salt solution of a precious metal selected from the group Consisting of gold, silver, mercury, platinum, rhodium, osmium, palladium and iridium thereby to dissolve out some bivalent metal from a surface portion of said body and precipitate on the said surface portion from which bivalent metal was dissolved said precious metal.
3. A method as set forth in claim 2, wherein a p-type semi-conductive body is employed, thereby to produce an ohmic connection to said body.
4. A method as set forth in claim 2, wherein an ntype semi-conductive body is employed, thereby to produce a rectifying connection to said body.
5. A method as set forth in claim 2 wherein at least part of the precipitated precious metal is thereafter chemically removed from the body and replaced by a different electrically conductive metal.
6. A method of making an electrical connection to a semi-conductive body constituted of a member selected from the group consisting of a bivalent metal selenide and a bivalent metal telluride, said bivalent metal being selected from the group consisting of zinc, cadmium, mercury, tin and lead, which comprises bringing said body into reactive engagement with a gold salt solution at room temperature thereby to dissolve out some bivalent metal from a surface portion of said body and precipitate gold on the said bivalent-metal-depleted surface portion.
7. A method of making an electrical connection to a semi-conductive body constituted of a member selected from the group consisting of a bivalent metal selenide and a bivalent metal telluride, said bivalent meatl being ing selected from the group consisting of Zinc, cadmium, mercury, tin and lead, which comprises bringing said body into reactive engagement with a silver salt solution at room temperature thereby to dissolve out some bivalent metal from a surface portion of said body and precipitate silver on the said bivalent-metal-depleted surface portion.
8. A method of making an electrical connection to a semi-conductive body constituted of a member selected from the group consisting of a bivalent metal selenide and a bivalent metal telluride, said bivalent metal being selected from the group consisting of zinc, cadmium, mercury, tin and lead, which comprises bringing said body into reactive engagement with a platinum salt solution at a temperature of about 50 C. thereby to dissolve out some bivalent metal from a surface portion of said body and precipitate platinum on the said bivalentmetal-depleted surface portion.
9. A method of making an electrical connection to a semi-conductive body constituted of a member selected from the group consisting of a bivalent metal selenide and a bivalent metal telluride, said bivalent metal being selected from the group consisting of Zinc, cadmium, mercury, tin and lead, which comprises bringing said body into reactive engagement with a rhodium salt solution at a temperature of about 50 C. thereby to dissolve out some bivalent metal from a surface portion of said body and precipitate rhodium on the said bivalent-metaldepleted surface portion.
References Cited in the file of this patent UNITED STATES PATENTS 2,677,715 Auwarter May 4, 1954 2,710,813 Forgue June 14, 1955 OTHER REFERENCES Schwartz: Proc. Phys. Soc. (London), 63B (1950), pp. 6245.
Schwartz: Nature, vol. 162 (1948), pp. 614-15.
Claims (1)
1. A METHOD OF MAKING AN ELECTRICAL CONNECTION TO A SEMICONDUCTIVE BODY CONSTITUTED OF A MEMBER SELECTED FROM THE GROUP CONSISTING OF A BIVALENT METAL SELENIDE AND A BIVALENT METAL TELLURIDE, SAID BIVALENT METAL BEING SELECTED FROM THE GROUP CONSISTING OF ZINC, CADMIUM, MERCURY, TIN AND LEAD, WHICH COMPRISES BRINGING SAID BODY INTO REACTIVE ENGAGEMENT WITH A SOLUTION OF A PRECIOUS METAL SELECTED FROM THE GROUP CONSISTING OF GOLD SILVER, MERCURY, PLATINUM, RHODIUM, OSMIUM, PALLADIUM AND IRIDIUM THEREBY TO DISSOLVE OUT SOME BIVALENT METAL FROM A SURFACE PORTION OF SAID BODY AND PRECIPITATE ON THE SAID SURFACE PORTION FROM WHICH BIVALENT METAL WAS DISSOVED SAID PRECIOUS METAL.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL354169X | 1954-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2865793A true US2865793A (en) | 1958-12-23 |
Family
ID=19785152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US549754A Expired - Lifetime US2865793A (en) | 1954-12-06 | 1955-11-29 | Method of making electrical connection to semi-conductive selenide or telluride |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2865793A (en) |
| BE (1) | BE543390A (en) |
| CH (1) | CH354169A (en) |
| DE (1) | DE1255820B (en) |
| FR (1) | FR1143213A (en) |
| GB (1) | GB800557A (en) |
| NL (2) | NL99205C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3187414A (en) * | 1959-02-05 | 1965-06-08 | Baldwin Co D H | Method of producing a photocell assembly |
| US3208835A (en) * | 1961-04-27 | 1965-09-28 | Westinghouse Electric Corp | Thermoelectric members |
| US3225273A (en) * | 1960-05-13 | 1965-12-21 | Philips Corp | Semi-conductor devices and methods for their manufacture |
| US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
| US3366518A (en) * | 1964-07-01 | 1968-01-30 | Ibm | High sensitivity diodes |
| US3523038A (en) * | 1965-06-02 | 1970-08-04 | Texas Instruments Inc | Process for making ohmic contact to planar germanium semiconductor devices |
| US4468685A (en) * | 1980-03-27 | 1984-08-28 | Farrow Robin F C | Infrared detector using grey tin |
| US20060121716A1 (en) * | 2002-09-20 | 2006-06-08 | Gerard Petroz | Method for the production of electrodes on a type II or VI semiconductor material or on a compound of said material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2677715A (en) * | 1950-09-23 | 1954-05-04 | Alois Vogt Dr | Optical-electrical conversion device comprising a light-permeable metal electrode |
| US2710813A (en) * | 1951-01-02 | 1955-06-14 | Rca Corp | Cadmium selenide-zinc selenide photoconductive electrode and method of producing same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2560979A (en) * | 1948-07-30 | 1951-07-17 | Padio Corp Of America | Chemical deposition of metallic films |
-
0
- NL NL192972D patent/NL192972A/xx unknown
- NL NL99205D patent/NL99205C/xx active
- BE BE543390D patent/BE543390A/xx unknown
-
1955
- 1955-11-29 US US549754A patent/US2865793A/en not_active Expired - Lifetime
- 1955-12-02 GB GB34561/55A patent/GB800557A/en not_active Expired
- 1955-12-02 DE DEN11528A patent/DE1255820B/en active Pending
- 1955-12-05 CH CH354169D patent/CH354169A/en unknown
- 1955-12-05 FR FR1143213D patent/FR1143213A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2677715A (en) * | 1950-09-23 | 1954-05-04 | Alois Vogt Dr | Optical-electrical conversion device comprising a light-permeable metal electrode |
| US2710813A (en) * | 1951-01-02 | 1955-06-14 | Rca Corp | Cadmium selenide-zinc selenide photoconductive electrode and method of producing same |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3187414A (en) * | 1959-02-05 | 1965-06-08 | Baldwin Co D H | Method of producing a photocell assembly |
| US3225273A (en) * | 1960-05-13 | 1965-12-21 | Philips Corp | Semi-conductor devices and methods for their manufacture |
| US3208835A (en) * | 1961-04-27 | 1965-09-28 | Westinghouse Electric Corp | Thermoelectric members |
| US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
| US3366518A (en) * | 1964-07-01 | 1968-01-30 | Ibm | High sensitivity diodes |
| US3523038A (en) * | 1965-06-02 | 1970-08-04 | Texas Instruments Inc | Process for making ohmic contact to planar germanium semiconductor devices |
| US4468685A (en) * | 1980-03-27 | 1984-08-28 | Farrow Robin F C | Infrared detector using grey tin |
| US20060121716A1 (en) * | 2002-09-20 | 2006-06-08 | Gerard Petroz | Method for the production of electrodes on a type II or VI semiconductor material or on a compound of said material |
| US7553746B2 (en) | 2002-09-20 | 2009-06-30 | Commissariat A L'energie Atomique | Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1143213A (en) | 1957-09-27 |
| BE543390A (en) | |
| DE1255820B (en) | 1967-12-07 |
| NL99205C (en) | |
| GB800557A (en) | 1958-08-27 |
| NL192972A (en) | |
| CH354169A (en) | 1961-05-15 |
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