US3086856A - Method and device for the successive zone melting and resolidifying of extremely pure substances - Google Patents

Method and device for the successive zone melting and resolidifying of extremely pure substances Download PDF

Info

Publication number
US3086856A
US3086856A US409420A US40942054A US3086856A US 3086856 A US3086856 A US 3086856A US 409420 A US409420 A US 409420A US 40942054 A US40942054 A US 40942054A US 3086856 A US3086856 A US 3086856A
Authority
US
United States
Prior art keywords
rod
zone
molten
melting
resolidifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US409420A
Inventor
Siebertz Karl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1953S0036998 external-priority patent/DE975158C/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to US209016A priority Critical patent/US3234009A/en
Application granted granted Critical
Publication of US3086856A publication Critical patent/US3086856A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26Stirring of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32Mechanisms for moving either the charge or the heater
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91Downward pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917Magnetic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1036Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone

Definitions

  • the process may serve to produce a single crystal from an originally amorphous or polycrystalline material, which may be sintered or otherwise produced. This requires placing into the melting zone, at the point where it commences its travel along the body, a single crystal of the proper orientation to serve as a crystal germ.
  • the zone-melting process as heretofore known requires placing the material to be melted into a crucible or boat of refractory material.
  • the results of the process therefore, are affected by the fact that the material being processed can take up new impurities from the surface of the crucible walls.
  • the body to be successively zone melted is mechanically supported at only a few places so that the melting zones are only in the slightest degree, if at all, in contact with the means holding or containing the body.
  • the melting zone is kept so narrow that the surface tension suffices for retaining it between the adjacent solid parts of the material.
  • the elongated and preferably rod-shaped body is arranged vertically, in contrast to the horizontal arrangement heretofore customary.
  • the running-off of the molten material is prevented by continuously revolving the body during the zone-melting operation.
  • the body may be given a horizontal or inclined arrangement and is heated only from above so that the melting zone does not extend through the entire diameter of the rod but forms only a molten segment or cone-shaped zone comprising only about the upper half of the rod, while the lower part of the rod remains solid and carries the melting zone.
  • the liquid material in the melting zone which in this case may traverse the entire cross section of the rod, is kept freely floating by electromagnetic or pneumatic means.
  • an electric field may be produced which, at
  • the same effect can be obtained by the coaction of correspondingly arranged streams of gas.
  • the gas to be used for this purpose is the same protective or inert gas that forms the atmosphere within which the entire zone-melting operation is to be performed.
  • FIG. 1 illustrates an arrangement for heat-treating a vertically held elongated body of material according to the invention wherein the melted zone is prevented from running off by means of a plurality of inclined blowers;
  • FIG. 2 illustrates an alternative method of practicing the invention wherein the material being treated is horizontally or slantingly disposed
  • FIG. 3 is a transverse cross-sectional view of FIG. 2
  • FIG. 4 shows an apparatus for performing the method according to the invention with an arrangement as shown in PEG. 1.
  • a rod 1, of aluminum for example, to be processed is held in vertical position by clamping devices 2 and 3 engaging the two ends of the rod.
  • a directly or indirectly heated ring 4 of small axial width in comparison with the length of the rod 1 surrounds a zone 5 of the rod in concentric relation thereto.
  • the whole device is located in a vacuum or within a protective inert gaseous medium.
  • a number of nozzles 6 are distributed around the rod below the heater 4. Their blowing direction is such that the melting zone 5 is impinged on all sides from below so that the molten material cannot drop off.
  • the gas supplied to the nozzle 6 is preheated by a heating device (not shown) to prevent marginal cooling of the melting zone.
  • the clamps 2 and 3 together with the rod 1 are displaceable in the direction of the arrow 7 relative to the stationarily mounted heating and blowing devices 4, 6.
  • the mechanism for moving the holders together with the rod may comprise a motor driven worm screw, a guide device for allowing simultaneous translatory motion of the two holders, and gear mechanism carried by the holders and in meshing engagement with the worm screw. During the operation, therefore, the melting zone 5 travels from the bottom upwardly along the rod.
  • the rod 1 of the material to be purified is arranged horizontally.
  • An arc lamp 8 serves as a source of heat.
  • a blowing device 11 directs a cooling stream of protective gas against the bottom side of rod 1 to prevent the melting zone from breaking through the solid area.
  • the rod 1 is continuously kept in revolution in the direction of the arrow 12 by means of a motor (not illustrated) adapted to turn a holding device at one end of the rod being processed.
  • the radiation source 8, 9 is displaced relative and cooling means in relation to a cross section of rod' Its radiation 1 through the melting zone 10.
  • the heat source 8, 9 is given a somewhat slanting arrangement while the cooling effect of the nozzle arrangement 11 extends over a larger peripheral range of the rod and is effective not only from below but also from the side of the rod.
  • the rod 1 to be processed is mounted at both ends in respective holders 2,3 and is surrounded by a ring-shaped heater 4 for melting an axially narrow cross-sectional zone as described above with reference to FIG. 1.
  • Holder 3 is mounted on a support 21 which is slidably connected with a base plate 22 *and can be displaced in the axial direction of rod 1 by means of a screw spindle 23.
  • a bell-shaped housing 24 sealed against the base plate 22 encloses the rod 1 to permit operating in vacuum or m a protective atmosphere.
  • the holder 2 is mounted on a shaft 25 that passes through the housing to the outside and carries a gear 26 to be driven from a motor 27.
  • the heater ring 4 is mounted on an axially displaceable rod 28 that extends to the outside of the housing 24 where it is connected by a rope 29 with a reel 30.
  • the reel for instance by means of another motor, causes the rod 28 and the heater 4 to progress along the rod 1, for instance, in the direction of the arrow 7 for zone-melting the rod in the manner described.
  • the spacing between the holders 2 and 3 can be varied for controlling the cross section of the processed portion of material.
  • the motor 27 may be operated to keep the upper portion of rod 1 in revolution. If desired, another motor may be provided for also revolving the holder 3 with the lower portion of rod 1.
  • a magnet coil 31 is mounted on rod 28 in concentric relation to heater ring operation a magnetic fielo to counteract the tendency of the molten material to run Oil.
  • the device is also equipped with the above-described nozzles 6 that, when in use, blow a stream of gas up wardly against the molten zone.
  • the gas may be identical with the one used as a protective atmosphere.
  • the nozzles are preferably mounted together with the heater so that they maintain, during the travel motion, their proper spacing from the molten zone.
  • the method of processing an elongated rod-shaped body of melta-ble material of delimited length comprising clampingly supporting the body at opposite end portions, heating a segmental zone of said body to molten temperature, said zone extending only part way across said body, and advancing said heating along said body, the axial length and cross-sectional area of said molten zone being small enough so that surface tension serves to contain said molten zone in position along said body.
  • the crucible-free method of zone-melting an elongated rod-shaped body of meltable material comprising supporting the body at its end regions, heating a transshaped body, while directing a blast of preheated inert gas so that it impinges against the molten zone, serving to counteract gravitational force acting on the molten material by preventing the dropping off of molten material, and also serving to prevent marginal cooling of the melting zone.

Description

Apnl 23, 1963 K. SIEBERTZ 3,086,856
METHOD AND DEVICE FOR THE SUCCESSIVE ZONE MELTING AND RESOLIDIFYING OF EXTREMELY PURE SUBSTANCES Filed Feb. 10, 1954 FIG.4
FIG.I
FIG.3
United States Patent 3,086,856 METHQD AND DEVlCE FGR THE SUCCESSKVE ZONE MEL'HNG AND RESULIDIFYING 0F EX- TREMELY PURE SUBSTANQES Karl Siebertz, Munich, Germany, assignor to Siemens & li-lalske Aktiengesellschaft, Berlin and Munich, Germany, a German corporation Filed Feb. 10, 1954, Ser. No. 469,420 Qlaims priority, application Germany Feb. 14, 1953 6 (Ilaims. (Cl. 75-10) -It is known to liberate last traces of impurities from generally pure materials by successively melting a zone of an elongated body or rod of the material in such a manner that the molten zone travels gradually from one end of the body to the other. Due to the concentration jump of the dissolved impurities in the border surface between the liquid and solid portions of the rod, the molten zone becomes enriched in impurities while a depletion occurs in the resolidifying material, or vice versa. Due to the fact that the melting zone is gradually displaced from one to the other end of the rod, the impurities also migrate toward one of these ends. If necessary, the process can be repeated for obtaining maximum degrees of purity. At the same time, the process may serve to produce a single crystal from an originally amorphous or polycrystalline material, which may be sintered or otherwise produced. This requires placing into the melting zone, at the point where it commences its travel along the body, a single crystal of the proper orientation to serve as a crystal germ.
The zone-melting process as heretofore known requires placing the material to be melted into a crucible or boat of refractory material. The results of the process, therefore, are affected by the fact that the material being processed can take up new impurities from the surface of the crucible walls.
It is an object of my invention to avoid this deficiency and to improve the zone-melting method toward achieving a higher degree of purity of the material being treated and toward a reduction in the processing time needed for securing a given degree of purity.
To this end, and in accordance with a feature of my invention, the body to be successively zone melted is mechanically supported at only a few places so that the melting zones are only in the slightest degree, if at all, in contact with the means holding or containing the body. To prevent the molten material from running off due to its gravity, the melting zone is kept so narrow that the surface tension suffices for retaining it between the adjacent solid parts of the material. To achieve this result, and according to another feature of my invention, the elongated and preferably rod-shaped body is arranged vertically, in contrast to the horizontal arrangement heretofore customary.
According to another feature of my invention, the running-off of the molten material is prevented by continuously revolving the body during the zone-melting operation.
According to still another feature of the invention, the body may be given a horizontal or inclined arrangement and is heated only from above so that the melting zone does not extend through the entire diameter of the rod but forms only a molten segment or cone-shaped zone comprising only about the upper half of the rod, while the lower part of the rod remains solid and carries the melting zone.
According to a further feature of the invention, the liquid material in the melting zone, which in this case may traverse the entire cross section of the rod, is kept freely floating by electromagnetic or pneumatic means. To this end, an electric field may be produced which, at
ice
the place of the melting zone, produces potential surfaces of a corresponding shape, for instance saddle shape, to
magnetically support the material, the material being electrically conductive at least when in its molten condition. The same effect can be obtained by the coaction of correspondingly arranged streams of gas. The gas to be used for this purpose is the same protective or inert gas that forms the atmosphere within which the entire zone-melting operation is to be performed.
The foregoing and other features of the invention will be more fully understood from the following description of the embodiments of devices according to the invention illustrated on the drawing, in which- FIG. 1 illustrates an arrangement for heat-treating a vertically held elongated body of material according to the invention wherein the melted zone is prevented from running off by means of a plurality of inclined blowers;
FIG. 2 illustrates an alternative method of practicing the invention wherein the material being treated is horizontally or slantingly disposed;
FIG. 3 is a transverse cross-sectional view of FIG. 2
taken through the melted zone; and
FIG. 4 shows an apparatus for performing the method according to the invention with an arrangement as shown in PEG. 1.
According to FIG. 1, a rod 1, of aluminum for example, to be processed is held in vertical position by clamping devices 2 and 3 engaging the two ends of the rod. A directly or indirectly heated ring 4 of small axial width in comparison with the length of the rod 1 surrounds a zone 5 of the rod in concentric relation thereto. The whole device is located in a vacuum or within a protective inert gaseous medium. A number of nozzles 6 are distributed around the rod below the heater 4. Their blowing direction is such that the melting zone 5 is impinged on all sides from below so that the molten material cannot drop off. The gas supplied to the nozzle 6 is preheated by a heating device (not shown) to prevent marginal cooling of the melting zone. The clamps 2 and 3 together with the rod 1 are displaceable in the direction of the arrow 7 relative to the stationarily mounted heating and blowing devices 4, 6. The mechanism for moving the holders together with the rod may comprise a motor driven worm screw, a guide device for allowing simultaneous translatory motion of the two holders, and gear mechanism carried by the holders and in meshing engagement with the worm screw. During the operation, therefore, the melting zone 5 travels from the bottom upwardly along the rod.
In the embodiment shown in FIGS. 2 and 3, the rod 1 of the material to be purified is arranged horizontally. An arc lamp 8 serves as a source of heat. is concentrated upon the surface of rod 1 by means of a hollow mirror 9 and produces a trough or cone-shaped melting zone 10. This melting zone is carried by the underlying solid portion of the rod. A blowing device 11 directs a cooling stream of protective gas against the bottom side of rod 1 to prevent the melting zone from breaking through the solid area. The rod 1 is continuously kept in revolution in the direction of the arrow 12 by means of a motor (not illustrated) adapted to turn a holding device at one end of the rod being processed.
In addition, the radiation source 8, 9 is displaced relative and cooling means in relation to a cross section of rod' Its radiation 1 through the melting zone 10. As apparent from FIG. 3, the heat source 8, 9 is given a somewhat slanting arrangement while the cooling effect of the nozzle arrangement 11 extends over a larger peripheral range of the rod and is effective not only from below but also from the side of the rod.
In the device according to FIG. 4, the rod 1 to be processed is mounted at both ends in respective holders 2,3 and is surrounded by a ring-shaped heater 4 for melting an axially narrow cross-sectional zone as described above with reference to FIG. 1. Holder 3 is mounted on a support 21 which is slidably connected with a base plate 22 *and can be displaced in the axial direction of rod 1 by means of a screw spindle 23. A bell-shaped housing 24 sealed against the base plate 22 encloses the rod 1 to permit operating in vacuum or m a protective atmosphere. The holder 2 is mounted on a shaft 25 that passes through the housing to the outside and carries a gear 26 to be driven from a motor 27. The heater ring 4 is mounted on an axially displaceable rod 28 that extends to the outside of the housing 24 where it is connected by a rope 29 with a reel 30.
Operating the reel, for instance by means of another motor, causes the rod 28 and the heater 4 to progress along the rod 1, for instance, in the direction of the arrow 7 for zone-melting the rod in the manner described. During the processing, the spacing between the holders 2 and 3 can be varied for controlling the cross section of the processed portion of material. Also during the zone-melting, the motor 27 may be operated to keep the upper portion of rod 1 in revolution. If desired, another motor may be provided for also revolving the holder 3 with the lower portion of rod 1.
A magnet coil 31 is mounted on rod 28 in concentric relation to heater ring operation a magnetic fielo to counteract the tendency of the molten material to run Oil. For the same purpose the device is also equipped with the above-described nozzles 6 that, when in use, blow a stream of gas up wardly against the molten zone. The gas may be identical with the one used as a protective atmosphere. The nozzles are preferably mounted together with the heater so that they maintain, during the travel motion, their proper spacing from the molten zone.
I claim:
1. The process of successively zone-melting and resolidifying a rod of fusible material which comprises sup 4 to produce during the melting' the molten zone moving in a helical path in and along said body.
2. The process of claim 1, the molten segmental zone extending not more than half Way across the cross section of said rod.
3. The process of successively zone-melting and resolidifying a rod of fusible material which comprises supporting said rod at opposite end portions, applying heat to establish a molten segmental zone extending only part Way across the cross section of the rod, the axial Width and cross-sectional area of said molten zone being such that the amount of molten material is limited to that which is supportable solely by virtue of cohesive and in a helical path in and along said body.
4. The process of claim 3, the molten segmental zone extending not more than half way across the cross section of said rod.
5. The method of processing an elongated rod-shaped body of melta-ble material of delimited length, comprising clampingly supporting the body at opposite end portions, heating a segmental zone of said body to molten temperature, said zone extending only part way across said body, and advancing said heating along said body, the axial length and cross-sectional area of said molten zone being small enough so that surface tension serves to contain said molten zone in position along said body.
6. The crucible-free method of zone-melting an elongated rod-shaped body of meltable material, comprising supporting the body at its end regions, heating a transshaped body, while directing a blast of preheated inert gas so that it impinges against the molten zone, serving to counteract gravitational force acting on the molten material by preventing the dropping off of molten material, and also serving to prevent marginal cooling of the melting zone.
References Cited in the file of this patent UNITED STATES PATENTS OTHER REFERENCES Keck and Golay: Phys. Rev. 89, 1297 (1953).

Claims (1)

1. THE PROCESS OF SUCCESSIVELY ZONE-MELTING AND RESOLIDIFYING A ROD OF FUSIBLE MATERIAL WHICH COMPRISES SUPPORTING SAID ROD AT OPPOSITE END PORTIONS IN A VERTICAL POSITION, APPLYING HEAT TO ESTABLISH A MOLTEN SEGMENTAL ZONE EXTENDING ONLY PART WAY ACROSS THE CROSS SECTION OF THE ROD, THE AXIAL WIDTH AND CROSS-SECTIONAL AREA OF SAID MOLTEN ZONE BEING SUCH THAT THE AMOUNT OF MOLTEN MATERIAL IS LIMITED TO THAT WHICH IS SUPPORTABLE SOLELY BY VIRTUE OF COHESIVE AND ADHESIVE FORCES, AND DISPLACING SAID MOLTEN ZONE IN AN AXIAL DIRECTION ALONG SAID ROD, WHILE AT THE SAME TIME TURNING SAID ROD SO THAT SUBSTANTTIALLY ALL SURFACE PORTIONS THEREOF ARE PROGRESSIVELY MELTED, THE MOLTEN ZONE MOVING IN A HELICAL PATH IN AND ALONG SAID BODY.
US409420A 1953-02-14 1954-02-10 Method and device for the successive zone melting and resolidifying of extremely pure substances Expired - Lifetime US3086856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US209016A US3234009A (en) 1953-02-14 1962-07-11 Method and device for the successive zone melting and resolidifying of extremely pure substances

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES32193A DE1061527B (en) 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces
DE1953S0036998 DE975158C (en) 1953-12-30 1953-12-30 Method and device for crucible-free zone melting of an elongated rod-shaped body
DES44099A DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt

Publications (1)

Publication Number Publication Date
US3086856A true US3086856A (en) 1963-04-23

Family

ID=27212565

Family Applications (5)

Application Number Title Priority Date Filing Date
US409420A Expired - Lifetime US3086856A (en) 1953-02-14 1954-02-10 Method and device for the successive zone melting and resolidifying of extremely pure substances
US409610A Expired - Lifetime US3030194A (en) 1953-02-14 1954-02-11 Processing of semiconductor devices
US586125A Expired - Lifetime US2876147A (en) 1953-02-14 1956-05-21 Method of and apparatus for producing semiconductor material
US13309A Expired - Lifetime US3234012A (en) 1953-02-14 1960-03-07 Method for remelting a rod of crystallizable material by crucible-free zonemelting
US147799A Expired - Lifetime US3216805A (en) 1953-02-14 1961-10-26 Device for crucible-free zone melting

Family Applications After (4)

Application Number Title Priority Date Filing Date
US409610A Expired - Lifetime US3030194A (en) 1953-02-14 1954-02-11 Processing of semiconductor devices
US586125A Expired - Lifetime US2876147A (en) 1953-02-14 1956-05-21 Method of and apparatus for producing semiconductor material
US13309A Expired - Lifetime US3234012A (en) 1953-02-14 1960-03-07 Method for remelting a rod of crystallizable material by crucible-free zonemelting
US147799A Expired - Lifetime US3216805A (en) 1953-02-14 1961-10-26 Device for crucible-free zone melting

Country Status (6)

Country Link
US (5) US3086856A (en)
CH (2) CH334388A (en)
DE (2) DE1061527B (en)
FR (2) FR1107076A (en)
GB (2) GB775986A (en)
NL (5) NL120780C (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226193A (en) * 1962-06-21 1965-12-28 Union Carbide Corp Method for growing crystals
US3231430A (en) * 1964-12-28 1966-01-25 Titanium Metals Corp Conditioning ingots
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US4218282A (en) * 1977-06-17 1980-08-19 Kabushiki Kaisha Suwa Seikosha Method of preparation of chrysoberyl and beryl single crystals
US4609402A (en) * 1985-10-28 1986-09-02 Iowa State University Research Foundation, Inc. Method of forming magnetostrictive rods from rare earth-iron alloys
US4615760A (en) * 1983-01-12 1986-10-07 Dressler Robert F Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear
US4828608A (en) * 1987-05-14 1989-05-09 Indium Corporation Of America Process for ultrapurification of indium
US5258092A (en) * 1991-03-22 1993-11-02 Shin-Etsu Handotai Co., Ltd. Method of growing silicon monocrystalline rod
US6039802A (en) * 1997-03-12 2000-03-21 Murata Manufacturing Co., Ltd. Single crystal growth method
US20050016837A1 (en) * 2002-01-16 2005-01-27 Michel Bruel Method of treating a part in order to alter at least one of the properties thereof

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE521845A (en) * 1952-08-01
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
BE562704A (en) * 1956-11-28
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
DE1169683B (en) * 1957-05-31 1964-05-06 Siemens Ag Method for crucible-free zone melting of a semiconductor rod
DE1238448B (en) * 1957-07-26 1967-04-13 Siemens Ag Method for doping a rod-shaped semiconductor body
DE1121223B (en) * 1957-08-29 1962-01-04 Philips Nv Process for the production of semiconducting bodies for semiconductor arrangements
NL234451A (en) * 1957-12-27
NL126240C (en) * 1958-02-19
BE581195A (en) * 1958-07-30
NL113487C (en) * 1958-08-16
BE582787A (en) * 1958-09-20 1900-01-01
NL244873A (en) * 1958-11-17
DE1203230B (en) * 1958-12-12 1965-10-21 Siemens Ag Process for the production of rods made of semiconductor material that are uniformly doped over their entire length
DE1164681B (en) * 1958-12-24 1964-03-05 Siemens Ag Process for the production of a uniformly doped rod made of semiconductor material by crucible-free zone melting
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
DE1152269B (en) * 1959-04-28 1963-08-01 Siemens Ag Device for crucible-free zone melting of a semiconductor rod in a vacuum chamber
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
NL135666C (en) * 1959-08-17
NL255530A (en) * 1959-09-11
DE1161043B (en) * 1959-09-15 1964-01-09 Siemens Ag Method and device for reducing the cross section of a semiconductor rod by means of crucible-free zone melting
NL133150C (en) * 1959-12-23
DE1114171B (en) * 1959-12-31 1961-09-28 Siemens Ag Holder for rod-shaped semiconductor material in devices for crucible-free zone melting
US3026188A (en) * 1960-04-11 1962-03-20 Clevite Corp Method and apparatus for growing single crystals
NL264214A (en) * 1960-05-02 1900-01-01
DE1188555B (en) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Process for the production of highly pure crystalline bodies from nitrides, phosphides or arsenides of III. Main group of the periodic table
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
GB963843A (en) * 1960-08-22 1964-07-15 Ass Elect Ind Improvements relating to zone melting by electron beam furnaces
NL260045A (en) * 1961-01-13
US3226248A (en) * 1962-03-14 1965-12-28 Texaco Experiment Inc Method of producing refractory monocrystalline boron structures
DE1251272B (en) * 1962-04-18 1967-10-05 N. V. Philips' Gloeilampenrabrieken, Eindhoven (Niederlande) Method and device for producing a rod by drawing it from a melt
NL301284A (en) * 1962-12-10
US3259468A (en) * 1963-05-02 1966-07-05 Monsanto Co Slim crystalline rod pullers with centering means
DE1217926B (en) * 1963-08-17 1966-06-02 Siemens Ag Method for avoiding streaks in metal or semiconductor crystals
DE1251721B (en) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
US3453370A (en) * 1965-06-11 1969-07-01 Us Air Force Continuous floating zone refining system
DE1265708B (en) * 1965-11-30 1968-04-11 Siemens Ag Device for crucible-free zone melting
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3515836A (en) * 1968-06-24 1970-06-02 Business Assets Corp Elevator means for a heat scanner device
FR1598493A (en) * 1968-12-18 1970-07-06
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US3620682A (en) * 1969-10-31 1971-11-16 Siemens Ag Apparatus for producing rod-shaped members of crystalline material
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
US3925108A (en) * 1970-11-25 1975-12-09 Gen Electric Method for preparing decomposable materials with controlled resistivity
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
US3939035A (en) * 1971-03-31 1976-02-17 Siemens Aktiengesellschaft Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
DE2127968A1 (en) * 1971-05-10 1972-11-16 Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) Process and device for influencing the crystalline structure of alloys and application of this process
CA957180A (en) * 1971-06-16 1974-11-05 Massachusetts, Institute Of Technology Alloy compositions containing non-dendritic solids and process for preparing and casting same
DE2143112A1 (en) * 1971-08-27 1973-03-01 Siemens Ag METHOD FOR ACHIEVING A UNIFORM RADIAL RESISTANCE PROGRESS IN THE PRODUCTION OF A SEMICONDUCTOR SINGLE CRYSTAL ROD BY CRUCIBLE-FREE ZONE MELTING
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
DE2319700C3 (en) * 1973-04-18 1980-11-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for influencing the radial resistance curve in a semiconductor single crystal rod during crucible-free zone melting and devices for carrying out the process
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US3936346A (en) * 1973-12-26 1976-02-03 Texas Instruments Incorporated Crystal growth combining float zone technique with the water cooled RF container method
BE811057A (en) * 1974-02-15 1974-08-16 Elphiac Sa UNIVERSAL MACHINE FOR THE PREPARATION OF SINGLE CRYSTALS FROM SEMICONDUCTOR MATERIALS OR OTHERS FOLLOWING CLASSIC METHODS.
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
JPS604599B2 (en) * 1976-03-17 1985-02-05 株式会社東芝 Method for producing lithium tantalate single crystal
DE2640377A1 (en) * 1976-09-08 1978-03-09 Leybold Heraeus Gmbh & Co Kg DEVICE FOR ZONE PULLING OF SINGLE CRYSTAL BARS
JPS53135037A (en) * 1977-04-28 1978-11-25 Nichiden Kikai Kk Heating apparatus
DK371977A (en) * 1977-08-22 1979-02-23 Topsil As METHOD AND APPLIANCE FOR REFINING SALMON MATERIAL
US4257841A (en) * 1978-01-06 1981-03-24 Monsanto Company Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
US4317799A (en) * 1979-03-12 1982-03-02 Mobil Tyco Solar Energy Corporation Belt-roller crystal pulling mechanism
FR2455921A2 (en) * 1979-05-08 1980-12-05 Anvar Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
WO1986006109A1 (en) * 1985-04-16 1986-10-23 Energy Materials Corporation Method and apparatus for growing single crystal bodies
JPS6259594A (en) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd Pulling up method of crystal and apparatus therefor
JPH078495B2 (en) * 1990-11-29 1995-02-01 信越半導体株式会社 Single crystal pulling device automatic cutting device for single crystal pulling device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2254306A (en) * 1939-03-18 1941-09-02 Nat Cylinder Gas Co Apparatus for flame hardening
FR1065523A (en) * 1951-11-16 1954-05-26 Western Electric Co Method for controlling the segregation of solutes in the zone fusion method
US2683676A (en) * 1950-01-13 1954-07-13 Bell Telephone Labor Inc Production of germanium rods having longitudinal crystal boundaries
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
FR1087946A (en) * 1952-12-17 1955-03-01 Western Electric Co Semiconductor material production process
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE42294C (en) * HEES 8c WILBERG in Magdeburg, Kronprinzenstr, 1 Block movement on meat weighing machines
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2419373A (en) * 1943-09-10 1947-04-22 Metals & Controls Corp Apparatus for vibrating metals during casting
US2623253A (en) * 1948-10-27 1952-12-30 Nat Lead Co Rod casting device
DE804840C (en) * 1948-10-28 1951-04-30 Ernst Teschner Dipl Ing Process for the continuous casting of hollow strings
US2553921A (en) * 1949-04-12 1951-05-22 Jordan James Fernando Continuous casting apparatus
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2770022A (en) * 1952-12-08 1956-11-13 Joseph B Brennan Method of continuously casting molten metal
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
DE1076623B (en) * 1957-11-15 1960-03-03 Siemens Ag Device for crucible-free zone drawing of rod-shaped semiconductor material

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2254306A (en) * 1939-03-18 1941-09-02 Nat Cylinder Gas Co Apparatus for flame hardening
US2683676A (en) * 1950-01-13 1954-07-13 Bell Telephone Labor Inc Production of germanium rods having longitudinal crystal boundaries
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
FR1065523A (en) * 1951-11-16 1954-05-26 Western Electric Co Method for controlling the segregation of solutes in the zone fusion method
US2739088A (en) * 1951-11-16 1956-03-20 Bell Telephone Labor Inc Process for controlling solute segregation by zone-melting
FR1087946A (en) * 1952-12-17 1955-03-01 Western Electric Co Semiconductor material production process
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226193A (en) * 1962-06-21 1965-12-28 Union Carbide Corp Method for growing crystals
US3231430A (en) * 1964-12-28 1966-01-25 Titanium Metals Corp Conditioning ingots
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US4218282A (en) * 1977-06-17 1980-08-19 Kabushiki Kaisha Suwa Seikosha Method of preparation of chrysoberyl and beryl single crystals
US4615760A (en) * 1983-01-12 1986-10-07 Dressler Robert F Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear
US4609402A (en) * 1985-10-28 1986-09-02 Iowa State University Research Foundation, Inc. Method of forming magnetostrictive rods from rare earth-iron alloys
US4828608A (en) * 1987-05-14 1989-05-09 Indium Corporation Of America Process for ultrapurification of indium
US5258092A (en) * 1991-03-22 1993-11-02 Shin-Etsu Handotai Co., Ltd. Method of growing silicon monocrystalline rod
US6039802A (en) * 1997-03-12 2000-03-21 Murata Manufacturing Co., Ltd. Single crystal growth method
US20050016837A1 (en) * 2002-01-16 2005-01-27 Michel Bruel Method of treating a part in order to alter at least one of the properties thereof
US7332030B2 (en) * 2002-01-16 2008-02-19 Michel Bruel Method of treating a part in order to alter at least one of the properties thereof

Also Published As

Publication number Publication date
US3030194A (en) 1962-04-17
CH334388A (en) 1958-11-30
FR69746E (en) 1958-11-19
DE1210415B (en) 1966-02-10
NL120780C (en) 1966-05-16
NL291970A (en) 1965-07-12
CH348262A (en) 1960-08-15
NL127664C (en) 1969-12-15
GB809163A (en) 1959-02-18
US3216805A (en) 1965-11-09
NL291972A (en) 1965-07-12
US3234012A (en) 1966-02-08
FR1107076A (en) 1955-12-28
NL127108C (en) 1969-09-15
GB775986A (en) 1957-05-29
DE1061527B (en) 1959-07-16
US2876147A (en) 1959-03-03
NL6601448A (en) 1966-05-25

Similar Documents

Publication Publication Date Title
US3086856A (en) Method and device for the successive zone melting and resolidifying of extremely pure substances
US2743199A (en) Process of zone refining an elongated body of metal
US2905798A (en) Induction heating apparatus
US2972525A (en) Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2773923A (en) Zone-refining apparatus
US3234009A (en) Method and device for the successive zone melting and resolidifying of extremely pure substances
US3108169A (en) Device for floating zone-melting of semiconductor rods
US2890139A (en) Semi-conductive material purification method and apparatus
US2855335A (en) Method of purifying semiconductor material
JPH06345584A (en) Method and apparatus for pulling monocrystal
US2964396A (en) Producing semiconductor substances of highest purity
US3275417A (en) Production of dislocation-free silicon single crystals
US3023091A (en) Methods of heating and levitating molten material
JPS6172699A (en) Device for growing sheet-form crystal of silicon
US3124633A (en) Certificate of correction
US3397042A (en) Production of dislocation-free silicon single crystals
US3414388A (en) Method and apparatus for increasing the cross section of a crystalline rod during crucible-free zone melting
US2914397A (en) Refining processes for semiconductor materials
US3360405A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
US3505032A (en) Heater immersed zone refined melt
US3232716A (en) Device for pulling monocrystalline semiconductor rods
US2981687A (en) Production of mono-crystal semiconductor bodies
US3960511A (en) Zone melting process
US3607109A (en) Method and means of producing a large diameter single-crystal rod from a polycrystal bar
US3157537A (en) Critical cooling in crucible free drawing process to produce low melting materials of highest purity