US34861A - Improved washing-machine - Google Patents
Improved washing-machine Download PDFInfo
- Publication number
- US34861A US34861A US34861DA US34861A US 34861 A US34861 A US 34861A US 34861D A US34861D A US 34861DA US 34861 A US34861 A US 34861A
- Authority
- US
- United States
- Prior art keywords
- concave
- cylinder
- rollers
- machine
- clothes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 14
- 229910052725 zinc Inorganic materials 0.000 description 14
- 239000011701 zinc Substances 0.000 description 14
- 239000002023 wood Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000036536 Cave Effects 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000000630 rising Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
Images
Classifications
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06F—LAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILE ARTICLES
- D06F11/00—Washing machines using rollers, e.g. of the mangle type
Description
UNITED STATES PATENT OFFICE.
RENSELLAER KNOVVLTON, OF EUREKA, ILLINOIS, ASSIGNOR TO HIMSELF AND JEREMIAH LAIVS, JR., OF SAME PLACE.
IMPROVED WASHING-MACHINE.
Specification forming part of Letters Patent No. 34,861, dated April 1, 1862.
T0 @ZZ whom it may concern.-
Be it known that I, RENSELLAER KNOWL- ToN, of Eureka, in the county of Voodford and State of Illinois, have invented a new and Improved Clothes-Iashing Machine; and I do hereby declare that the following is a full, clear, and exact description of the saine, reference being had to t-he accompanying drawings, making a part of this specification, in which- Figure l is a side sectional view of my invention, taken in the line x as, Fig. 2; Fig. 2, a plan or top view of the same.
Similar letters of reference indicate corresponding parts in the two figures.
This invention relates to a new and iinproved clothes-washing machine of that cla-ss in which a reciprocating rotating cylinder having a corrugated periphery is used, in connection with a concave beneath it formed of a series of smallrollers.
The invention consists, first, in arranging the concave in such a way that an oscillating motion will be given it as the cylinder is rotated, and the clothes acted upon between the cylinder and concave, whereby the clothes are subjected to a more efficient rubbing process than hitherto, and also made to pass back and forth between the cylinder and rollers with greater facility.
The invention consists, second, in having the periphery of the cylinder covered with zinc and the rollers of the concave covered with zinc and copper, the zinc and copper rollers being placed alternately in the con cave and connected in pairs, substantially as hereinafter fully shown and described, whereby a galvanic action is developed during the operation of the machine, and the clothes more readily cleaned than by the simple rubbing process alone.
To enable those skilled in the art to fully understand and construct my invention, I will proceed to describe it.
A represents a rectangular box, which may be constructed of wood of any suitable di1nen sions, and B is a cylinder, the axis or shaft C of which is fitted in bearings D D, which is provided each with a vertical guide-pin a at each end, the pins fitting in holes in the sides of the box A, and also in grooves in ledges or blocks b h, attached to each side of the box.
This arrangement admits of the bearings D D being kept in proper position while rising The cylinder B may be of wood, and it extends nearly the whole width of the box A, and is covered with a corrugated zinc plate F, the forni ot the corrugations being shown clearly in Fig. l.
Vithin the box A and underneath the cylinder B there is placed a concave G. This concave is formed of a series ot rollers d e f, the journals of which have their bearings in side plates 71. 7L, which are connected by crossties fr' L'. The side plates 71. 7L are of wood, and they bear against the inner sides of the box A, and at the center of the lower edge of each side plate 7L there is acurved projection j, and these projections serve as rockers for the concave. The central portion of the concave is ot' curved form, and it may be described as being a portion ofthe inner side of a cylinder having the saine axis as the cylinder B. The concave, however, may vary slightly from this foi-in so as to assume the position described when there is a space'between the concave and cylinder of three-eighths or a half inch. The upper or face side of the concave, therefore, is concentric with the cylinder B, and this portion of the concave is formed by the rollers d e, which are of wood, the rollers c7 being covered with zinc and the rollers c covered with copper. The rollers c7 e are placed in alternate position in the concave, so as to form pairs, which are connected at their inner sides by zinc straps or plates (See Fig. 1.)
The ends of the side plates 71` 71l are slightly curved in an incline-d direction, as shown in Fig. l, the lower parts of the ends projecting fartheroutward than the upper parts. Between these inclined ends of the side plates 71J 7L are placed the rollers f, which may be of wood and so placed that the two outermost rollers f will be in an inclined plane which forms an obtuse angle with the plane which passes through the two uppermost rollers f. These planes are indicated by red lines in Fig. l.
The operation is as follows: The box A is supplied with a requisite quantity of suds and the cylinder B is turned Iirst in one direction and then in the other, the clothes to be operated upon being moved back and forth between the cylinder B andthe rollers ofi the concave G. The pressure to which the clothes are subjected is due to the springs E E. The end rollers f, in consequence of having their journals fitted in the inclined ends of the side plates h h, admit of the clothes readily entering between the cylinder and concave Gr, and said4 concave, while the cylinder B is in operation, has a rocking motion imparted to it in consequence of the rockers This rocking or oscillating movement of the concave adds greatly to the efficiency of the rubbing action produced by the rotation of cylinder B and the rollers of the concave, as a variable or intermitting pressure is thereby produced. By the employment or use of the corrugated metal surface on cylinder B and the metal surfaces on the rollers d e of the concave G a galvanic action or current is produced, which passes through the clothes, and, owing to its detergent properties, greatly assists in cleaning them.
I do not claim a reciprocating rotating corrugated cylinder with a concave provided with small rollers and placed underneath the cylinder, for the purpose specified but I do claim as new and desire to secure by Letters Patentl. The combination of the cylinder B with the concave G, the latter being provided with rollers, when said concave is arranged with rockers j, as shown, to admit of the rocking or oscillating of the concave under the action of cylinder B, as and for the purpose set forth.
2. Having the cylinder B and the rollers (l e of the` concave covered, respectively, with zinc and copper or other suitable metals, and arranged, substantially as shown, to produce a galvanic action during the operation of the machine, for the purpose specified.
RENSELLAER KNOVVLTON. Witnesses:
O. M. KENT, A. M. MYERS.
Publications (1)
Publication Number | Publication Date |
---|---|
US34861A true US34861A (en) | 1862-04-01 |
Family
ID=2104443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US34861D Expired - Lifetime US34861A (en) | Improved washing-machine |
Country Status (1)
Country | Link |
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US (1) | US34861A (en) |
Cited By (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5954874A (en) * | 1996-10-17 | 1999-09-21 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride from a melt |
US5985024A (en) * | 1997-12-11 | 1999-11-16 | Northrop Grumman Corporation | Method and apparatus for growing high purity single crystal silicon carbide |
US6025289A (en) * | 1996-02-05 | 2000-02-15 | Cree Research, Inc. | Colorless silicon carbide crystals |
US6045612A (en) * | 1998-07-07 | 2000-04-04 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride |
US6045613A (en) * | 1998-10-09 | 2000-04-04 | Cree, Inc. | Production of bulk single crystals of silicon carbide |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
US6063185A (en) * | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
US6086672A (en) * | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
US20040173816A1 (en) * | 2003-03-03 | 2004-09-09 | Saxler Adam William | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
US20050173728A1 (en) * | 2004-02-05 | 2005-08-11 | Saxler Adam W. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US20050258451A1 (en) * | 2004-05-20 | 2005-11-24 | Saxler Adam W | Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions |
US20060244011A1 (en) * | 2005-04-29 | 2006-11-02 | Saxler Adam W | Binary group III-nitride based high electron mobility transistors and methods of fabricating same |
US20070120129A1 (en) * | 1999-11-19 | 2007-05-31 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
WO2008033994A1 (en) | 2006-09-14 | 2008-03-20 | Cree, Inc. | Micropipe-free silicon carbide and related method of manufacture |
US20080173884A1 (en) * | 2007-01-22 | 2008-07-24 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
DE102008009769A1 (en) | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double-flip semiconductor device and manufacturing method |
US20080217645A1 (en) * | 2007-03-09 | 2008-09-11 | Adam William Saxler | Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures |
DE102008013755A1 (en) | 2007-03-12 | 2008-10-16 | Cree, Inc. | Cover layers containing aluminum nitride for nitride-based transistors and methods for their production |
US20090021180A1 (en) * | 2007-07-17 | 2009-01-22 | Cree Inc. | Led with integrated constant current driver |
US20100032704A1 (en) * | 2005-01-24 | 2010-02-11 | Cree, Inc. | Led with current confinement structure and surface roughening |
WO2010077287A1 (en) | 2008-12-08 | 2010-07-08 | Cree, Inc. | Composite high reflectivity layer |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US7825432B2 (en) | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US20110136305A1 (en) * | 2004-01-16 | 2011-06-09 | Adam William Saxler | Group III Nitride Semiconductor Devices with Silicon Nitride Layers and Methods of Manufacturing Such Devices |
US20110140123A1 (en) * | 2004-01-16 | 2011-06-16 | Sheppard Scott T | Nitride-Based Transistors With a Protective Layer and a Low-Damage Recess |
US20110180827A1 (en) * | 2009-06-05 | 2011-07-28 | Hussell Christopher P | Solid state lighting device |
DE112010003087T5 (en) | 2009-07-27 | 2012-12-20 | Cree, Inc. | Process for the production of transistors with self-aligning control electrodes (gate) and source / drain zones |
DE112011101981T5 (en) | 2010-06-11 | 2013-05-02 | Cree, Inc. | Surface-emitting LED with high voltage and low current |
DE112011103482T5 (en) | 2010-10-15 | 2013-08-08 | Cree, Inc. | High voltage LEDs without wire connection |
DE112011104415T5 (en) | 2010-12-16 | 2013-09-26 | Cree, Inc. | High power LEDs with non-polymeric material lenses and method of making same |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US8648359B2 (en) | 2010-06-28 | 2014-02-11 | Cree, Inc. | Light emitting devices and methods |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
USD705181S1 (en) | 2011-10-26 | 2014-05-20 | Cree, Inc. | Light emitting device component |
USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
USD721339S1 (en) | 2010-12-03 | 2015-01-20 | Cree, Inc. | Light emitter device |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
WO2017053883A1 (en) | 2015-09-24 | 2017-03-30 | Melior Innovations, Inc. | Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide |
US11670605B2 (en) | 2020-04-03 | 2023-06-06 | Wolfspeed, Inc. | RF amplifier devices including interconnect structures and methods of manufacturing |
US11837457B2 (en) | 2020-09-11 | 2023-12-05 | Wolfspeed, Inc. | Packaging for RF transistor amplifiers |
-
0
- US US34861D patent/US34861A/en not_active Expired - Lifetime
Cited By (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6025289A (en) * | 1996-02-05 | 2000-02-15 | Cree Research, Inc. | Colorless silicon carbide crystals |
US5954874A (en) * | 1996-10-17 | 1999-09-21 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride from a melt |
US5985024A (en) * | 1997-12-11 | 1999-11-16 | Northrop Grumman Corporation | Method and apparatus for growing high purity single crystal silicon carbide |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6045612A (en) * | 1998-07-07 | 2000-04-04 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride |
US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
US6045613A (en) * | 1998-10-09 | 2000-04-04 | Cree, Inc. | Production of bulk single crystals of silicon carbide |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
US6063185A (en) * | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
US6086672A (en) * | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
US20070120129A1 (en) * | 1999-11-19 | 2007-05-31 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
US20040173816A1 (en) * | 2003-03-03 | 2004-09-09 | Saxler Adam William | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
US20110140123A1 (en) * | 2004-01-16 | 2011-06-16 | Sheppard Scott T | Nitride-Based Transistors With a Protective Layer and a Low-Damage Recess |
US20110136305A1 (en) * | 2004-01-16 | 2011-06-09 | Adam William Saxler | Group III Nitride Semiconductor Devices with Silicon Nitride Layers and Methods of Manufacturing Such Devices |
US20050173728A1 (en) * | 2004-02-05 | 2005-08-11 | Saxler Adam W. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US20050258451A1 (en) * | 2004-05-20 | 2005-11-24 | Saxler Adam W | Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions |
US20100032704A1 (en) * | 2005-01-24 | 2010-02-11 | Cree, Inc. | Led with current confinement structure and surface roughening |
US20060244011A1 (en) * | 2005-04-29 | 2006-11-02 | Saxler Adam W | Binary group III-nitride based high electron mobility transistors and methods of fabricating same |
WO2008033994A1 (en) | 2006-09-14 | 2008-03-20 | Cree, Inc. | Micropipe-free silicon carbide and related method of manufacture |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US20080173884A1 (en) * | 2007-01-22 | 2008-07-24 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
DE102008009769A1 (en) | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double-flip semiconductor device and manufacturing method |
US7825432B2 (en) | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US8362503B2 (en) | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
US20080217645A1 (en) * | 2007-03-09 | 2008-09-11 | Adam William Saxler | Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures |
US8324005B2 (en) | 2007-03-09 | 2012-12-04 | Cree, Inc. | Methods of fabricating nitride semiconductor structures with interlayer structures |
US9054017B2 (en) | 2007-03-09 | 2015-06-09 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures |
DE102008013755A1 (en) | 2007-03-12 | 2008-10-16 | Cree, Inc. | Cover layers containing aluminum nitride for nitride-based transistors and methods for their production |
US20090021180A1 (en) * | 2007-07-17 | 2009-01-22 | Cree Inc. | Led with integrated constant current driver |
WO2010077287A1 (en) | 2008-12-08 | 2010-07-08 | Cree, Inc. | Composite high reflectivity layer |
US8497522B2 (en) | 2009-06-05 | 2013-07-30 | Cree, Inc. | Solid state lighting device |
US20110180827A1 (en) * | 2009-06-05 | 2011-07-28 | Hussell Christopher P | Solid state lighting device |
DE112010003087T5 (en) | 2009-07-27 | 2012-12-20 | Cree, Inc. | Process for the production of transistors with self-aligning control electrodes (gate) and source / drain zones |
DE112011101981T5 (en) | 2010-06-11 | 2013-05-02 | Cree, Inc. | Surface-emitting LED with high voltage and low current |
US8648359B2 (en) | 2010-06-28 | 2014-02-11 | Cree, Inc. | Light emitting devices and methods |
DE112011103482T5 (en) | 2010-10-15 | 2013-08-08 | Cree, Inc. | High voltage LEDs without wire connection |
USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
USD721339S1 (en) | 2010-12-03 | 2015-01-20 | Cree, Inc. | Light emitter device |
DE112011104415T5 (en) | 2010-12-16 | 2013-09-26 | Cree, Inc. | High power LEDs with non-polymeric material lenses and method of making same |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
USD705181S1 (en) | 2011-10-26 | 2014-05-20 | Cree, Inc. | Light emitting device component |
WO2017053883A1 (en) | 2015-09-24 | 2017-03-30 | Melior Innovations, Inc. | Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide |
US11670605B2 (en) | 2020-04-03 | 2023-06-06 | Wolfspeed, Inc. | RF amplifier devices including interconnect structures and methods of manufacturing |
US11837457B2 (en) | 2020-09-11 | 2023-12-05 | Wolfspeed, Inc. | Packaging for RF transistor amplifiers |
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