US3500102A - Thin electron tube with electron emitters at intersections of crossed conductors - Google Patents

Thin electron tube with electron emitters at intersections of crossed conductors Download PDF

Info

Publication number
US3500102A
US3500102A US639928A US3500102DA US3500102A US 3500102 A US3500102 A US 3500102A US 639928 A US639928 A US 639928A US 3500102D A US3500102D A US 3500102DA US 3500102 A US3500102 A US 3500102A
Authority
US
United States
Prior art keywords
electron
conductors
thin
emitters
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US639928A
Inventor
Munsey E Crost
Kenneth Shoulders
Mortimer H Zinn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Army
Original Assignee
US Department of Army
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Army filed Critical US Department of Army
Application granted granted Critical
Publication of US3500102A publication Critical patent/US3500102A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/15Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen with ray or beam selectively directed to luminescent anode segments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Description

March 10, 1970 M, E, CRQST ETAL 3,500,102
THIN ELECTRON TUBE WITH ELECTRON EMITTERS AT INTERsEcTIoNs oF cRossED coNDUcToRs Filed May 15, 1967 /NvENTo/as,
2 Mu/vsEY E. cRoST gg KENNETH sHouLosRs U BY #afa/S? ff f. VOLTAGE f Sabo-vu( ggf@ C. @H
ATTORNEYS United States Patent O 3,500,102 THIN ELECTRON TUBE WITH ELECTRON EMITTERS AT INTERSECTIONS F CROSSED CONDUCTGRS Munsey E. Crost, Allenhurst, NJ., Kenneth Shoulders, Woodside, Calif., and Mortimer H. Zinn, West Long Branch, NJ., assignors, by direct and mesne assignments, to the United States of America as represented by the Secretary of the Army y Filed May 15, 1967, Ser. No. 639,928 Int. Cl. H011' 1 62, 63/04 U.S. Cl. 313-109 2 Claims ABSTRACT 0F THE DISCLOSURE The thin electron tube is made possible by providing a cathode of an extensive surface area having a large number of densely packed electron emitters spread over the area. A grid of conductors is provided on the cathode for selectively exciting predetermined ones of said emitters. Pulses applied to the conductors of the grid will cause emission at the emitters located at the points of crossing where a coincidence of pulses occur. The cathode is scanned by the pulses thereby eliminating the need for a deecting beam to produce scanning of a target. An anode is provided at the target to impart a velocity to the emitted electrons in the direction of the target.
Background of the invention The present invention relates to electron beam devices and more particularly to electron display tubes, storage tubes, and video pick-up tubes.
In the field of television and radar, it has been the general practice to employ cathode ray tubes having one or more electron guns which product electron beams for exciting a phosphor screen in some predetermined pattern to display information thereon. The screen is scanned by detlecting the electron beams as the information is displayed by modulating the electron density of the beam. In the television eld, the modulating information is obtained originally from a camera tube such as a vidicon tube in which a charge density pattern is formed by photoconduction and stored on that surface of the photoconductor which is scanned by the deflecting electron beam.
Such prior art cathode ray tubes, camera tubes, and the like usually take the form of a rather long, funnelshaped vacuum tubes, to provide suicient room for deecting the beams of electrons. Those concerned with the development of such tubes have long recognized the need for a tube which would be relatively'thin. The advantages of a thin display or camera tube are rather obvious from a -geometrical point of view. However, thin electron tubes are advantageous from an electrical point of view also. For example, standard color displays use three electron beams which pass through an aperature mask before striking a phosphor dot screen. Proper deection of the beam is important to insure that the beam passes through the aperatures properly and is not aborted by the mask. It has been found, however, that standard color display devices are useless when moving in the earths magnetic field which causes unwanted deflections of the beam and degration of the color display. Of course, if the flight time of the beam was decreased to a negligible amount there would be little or no unwanted deflections.
One of the rnost critical problems confronting designers of thin electron tubes has been the elimination of the need for deflecting the electron beams for scanning purposes and reducing the flight time of the electrons. The present invention overcomes this problem.
3,500,102 Patented Mar. 10, 1970 rice Summary of the invention Brief description of the drawings The exact nature of this invention as well as other objects and advantages thereof Will be readily apparent from consideration of the following detailed description of preferred embodiments of the invention as illustrated in the accompanying sheet of drawings in which:
FIGURES 1 and 2 show a sectional view of two different types of electron emitters used in the present invention;
FIGURE 3 shows an isometric sectional view of a portion of the cathode used in the present invention;
FIGURE 4 shows a top view of a preferred embodiment of the present invention;
FIGURE 5 shows a sectional view taken on the line 5-5 of FIGURE 4, and
FIGURE 6 shows a graph of I vs. V.
Description of the preferred embodiments Referring now to the drawing, wherein like reference characters designate like or corresponding parts throughout the several views, there is shown in FIGURES l-5 a cathode 10 having a dielectric substrate 11 for receiving a plurality of spaced, thin-film conductors 12 which may be deposited or painted thereon in a well-known manner. A thin layer 13 of dielectric material covers the conductors 12. A second plurality of thin-film conductors 14 are spaced on the surface of film 13. A large number of electron emitters 15 are provided on the cathode 10. The structure ogn electron emitter 1S may be of several different forms two of which are shown in FIGURES 1 and 2. An emitter 15 generally consists of an opening 16 which extends through the upper conductors 14 and the dielectric 13 to the surface of the lower conductor 12. Provided in the opening 16 is a means which will emit electrons therefrom as a result of a suflicient voltage difference between the conductors 14 and 12- FIGURE 1 shows an emitting means which is made up of a plurality of conductive asperities 17 which extend into the opening 16 and terminate in a relatively sharp pointed tip. Field emission of electrons from the tips of these asperities, which may be microscopic or less in size, is possible because of the extremely high field strength or eld gradient which exists at the tips thereof when a voltage is applied to conductor 14. Of course, the voltage difference between conductors 12 and 14 may be relatively low while the field strength at the tips of asperities 17 may be extremely hig'h as a result of the microscopic dimensions of the asperities 17, the relatively small spacing between conductors 12 and 14, and because the tips of asperities 17 extend close to the aperture of openings 16.
The emitter shown in FIGURE 2 consists of a semiconductor 19 such as barium oxide placed in opening 16. The semiconductor 19 is placed in contact with the conductors 12 and 14. Transverse field emission will liow from semiconductor 19 when current of a proper value is passed therethrough. Electron emission of this type was reported in EDN, April 1967, pp. 14 and 15.
A representative portion of the cathode 10 is shown in FIGURE 3. The electron emitters 15 are densely spread over the surface of the cathode 10. Emission from a particular group of electron emitters may be accomplished by pulsing simultaneously one of the conductors 12 and one of the conductors 14 with voltages of a proper value. The coincidence of these two voltages at the point of crossing of the conductors 12 and 14 which have been pulsed, will produce emission, as explained above, from those emitters 15 which are located at the point of crossing. By sequentially pulsing the conductors 12 and 14 in some predetermined manner, the cathode 10 may be scanned in any of the well-known fashions. The grid of conductors 12 and 14 may also be arranged to obtain a radial scanning effects common to ppi radar scopes. For example, conductors 14 may be arranged as concentric circles and conductors 12 may be arranged radially.
The electron ltube may take the form shown in FIG- URES 4 and 5 -which shows an electron display device having a glass envelope placed over the cathode 10. On the inside surface of envelope 20 and opposite conductors 14 may be placed a target of a phosphor screen 21 having a thin aluminied coating 22. A conductor 23 extends through envelope 20 and into contact with coating 22. Coating 22 may act as an anode by placing an accelerating voltage on conductor 23. The envelope 20 is hermetically sealed (with an insulating seal material) to the top surface of cathode 10 after which the space in the envelope 20 is then evacuated.
When electrons are emitted from the emitters 15, as a result of applying signals to the ends of conductors 12 and 14 which extend out of the vacuum through the seal between envelope 20 and the cathode 10 thereof, the anode 23 will accelerate these electrons toward the screen 21. The number of electrons emitted or the electron density at a particular emitter will depend on the particular voltage difference between the particular conductors 12 and 14 as determined by the lI-V characteristic. A typical I-V characteristic for a eld emitter is shown in FIGURE 6. Therefore, information in the form of a video display may be produced on the screen 21.
It is pointed out that the screen 21 may also lbe made up of an array of phosphor dots or a series of phosphor lines which will emit at three different colors when excited and the conductors 12 and 14 scanned accordinglyto provide a color picture. With certain obvious modifications, the tube may be adapted to be a camera tube or a storage tube. For example, in the case of a camera tube, accelerating and decelerating devices may be incorporated to perform their usual function. With two cathodes placed on opposite `sides of a single storage target a storage tube may be provided which will permit scan conversion or other storage tube functions to be carried out. In all cases, however, the result is a tube which does not require a deflection device and the necessary space required for deflection; there will be a short flight path and an extremely thin geometry.
Obviously many other modications and variations of the present invention are possible in the light of the above teachings. It is, therefore, to be understood, that within the scope of the appended claims, the invention may be practiced otherwise than as specifically described.
What is claimed is:
1. The device according to claim 2 and wherein said semiconductor means is barium oxide.
2. An electron tube comprising a relatively flat extended dielectric substrate; a first group of spaced thin lm conductors mounted on one surface of said substrate; a thin layer of dielectric material mounted on said one surface and covering said first group of conductors; a second group of spaced thin film conductors mounted on the surface of said thin layer of dielectric material and substantially transverse to said first group of spaced thin film conductors; said second group of conductors and said thin layer of dielectric material having a plurality of concentric openings extending therethrough to form a plurality of cavities; the base of each said cavity including a portion of one of said first group of conductors; electron emitter means comprising a semiconductor means mounted in each said opening and in contact with said conductors of said rst group and said second group for emitting electrons upon the application of' a predetermined potential difference between the conductors of said first and said second groups; a transparent envelope mounted on said thin layer of dielectric material and spaced from said openings to form an evacuated chamber; the surface of said envelope inside said chamber and opposite said emitters `being covered with a thin conductive film and a uorescent screen; anda conductive electrode connected to said thin conductive film and extending through said envelope whereby electrons are accelerated from said emitters toward said screen upon the application of a voltage to said electrode.
References Cited UNITED STATES PATENTS 2,595,617 5/1952 Toulon.
2,117,842 5/1938 George 313-336 2,858,480 10/ 1958 Shadowitz.
3,091,719 5/1963 Dyke et al. 313-336 X 3,334,269 8/1967 Heureux 3l3-l08 X OTHER REFERENCES EDN (Electrical Design News); April 1, 1967; pp. 14-15.
ROBERT SEGAL, Primary Examiner U.S. C1. X.R. 313-299, 309
US639928A 1967-05-15 1967-05-15 Thin electron tube with electron emitters at intersections of crossed conductors Expired - Lifetime US3500102A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63992867A 1967-05-15 1967-05-15

Publications (1)

Publication Number Publication Date
US3500102A true US3500102A (en) 1970-03-10

Family

ID=24566148

Family Applications (1)

Application Number Title Priority Date Filing Date
US639928A Expired - Lifetime US3500102A (en) 1967-05-15 1967-05-15 Thin electron tube with electron emitters at intersections of crossed conductors

Country Status (1)

Country Link
US (1) US3500102A (en)

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622828A (en) * 1969-12-01 1971-11-23 Us Army Flat display tube with addressable cathode
US3735186A (en) * 1971-03-10 1973-05-22 Philips Corp Field emission cathode
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
JPS4897473A (en) * 1972-02-11 1973-12-12
US3855499A (en) * 1972-02-25 1974-12-17 Hitachi Ltd Color display device
US4008412A (en) * 1974-08-16 1977-02-15 Hitachi, Ltd. Thin-film field-emission electron source and a method for manufacturing the same
FR2568394A1 (en) * 1984-07-27 1986-01-31 Commissariat Energie Atomique VISUALIZATION DEVICE BY CATHODOLUMINESCENCE EXCITED BY FIELD EMISSION
US5402041A (en) * 1992-03-31 1995-03-28 Futaba Denshi Kogyo K.K. Field emission cathode
US5451830A (en) * 1994-01-24 1995-09-19 Industrial Technology Research Institute Single tip redundancy method with resistive base and resultant flat panel display
US5557177A (en) * 1994-01-18 1996-09-17 Engle; Craig D. Enhanced electron beam addressed storage target
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays
US5656886A (en) * 1995-12-29 1997-08-12 Micron Display Technology, Inc. Technique to improve uniformity of large area field emission displays
US5663742A (en) * 1995-08-21 1997-09-02 Micron Display Technology, Inc. Compressed field emission display
US5698934A (en) * 1994-08-31 1997-12-16 Lucent Technologies Inc. Field emission device with randomly distributed gate apertures
US5721560A (en) * 1995-07-28 1998-02-24 Micron Display Technology, Inc. Field emission control including different RC time constants for display screen and grid
US5773927A (en) * 1995-08-30 1998-06-30 Micron Display Technology, Inc. Field emission display device with focusing electrodes at the anode and method for constructing same
US5854615A (en) * 1996-10-03 1998-12-29 Micron Display Technology, Inc. Matrix addressable display with delay locked loop controller
US5866979A (en) * 1994-09-16 1999-02-02 Micron Technology, Inc. Method for preventing junction leakage in field emission displays
US5910791A (en) * 1995-07-28 1999-06-08 Micron Technology, Inc. Method and circuit for reducing emission to grid in field emission displays
US5923948A (en) * 1994-11-04 1999-07-13 Micron Technology, Inc. Method for sharpening emitter sites using low temperature oxidation processes
US5975975A (en) * 1994-09-16 1999-11-02 Micron Technology, Inc. Apparatus and method for stabilization of threshold voltage in field emission displays
EP0959485A1 (en) * 1998-05-18 1999-11-24 Barco N.V. Cold cathode electron-emitting device
US5994832A (en) * 1992-01-22 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Display device having plural second substrates
US6068750A (en) * 1996-01-19 2000-05-30 Micron Technology, Inc. Faceplates having black matrix material
US6081246A (en) * 1996-11-12 2000-06-27 Micron Technology, Inc. Method and apparatus for adjustment of FED image
US6137212A (en) * 1998-05-26 2000-10-24 The United States Of America As Represented By The Secretary Of The Army Field emission flat panel display with improved spacer architecture
US6225739B1 (en) 1998-05-26 2001-05-01 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6417605B1 (en) 1994-09-16 2002-07-09 Micron Technology, Inc. Method of preventing junction leakage in field emission devices
US6455841B2 (en) 2000-03-02 2002-09-24 Chorum Technologies Lp Optical wavelength router based on polarization interferometer
US6512615B2 (en) 1996-10-29 2003-01-28 Chorum Technologies Lp Method and apparatus for wavelength multiplexing/demultiplexing
US6515786B1 (en) 2001-08-03 2003-02-04 Chorum Technologies Lp Bandwidth variable wavelength router and method of operation
US6519060B1 (en) 1999-06-04 2003-02-11 Chorum Technologies Lp Synchronous optical network in frequency domain
US20030057861A1 (en) * 2000-01-14 2003-03-27 Micron Technology, Inc. Radiation shielding for field emitters
US6545779B1 (en) 1996-10-29 2003-04-08 Chorum Technologies Lp System for dealing with faults in an optical link
US6545783B1 (en) 1996-10-29 2003-04-08 Chorum Technologies Lp Optical wavelength add/drop multiplexer
US20040239235A1 (en) * 2003-06-02 2004-12-02 Katsumi Oono Field emission display device and method of manufacturing same
US6847786B2 (en) 1996-10-29 2005-01-25 Ec-Optics Technology, Inc. Compact wavelength filter using optical birefringence and reflective elements
US20070046165A1 (en) * 2001-03-20 2007-03-01 Alexander Kastalsky Pixel structure for an edge-emitter field-emission display
USRE39633E1 (en) * 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2117842A (en) * 1935-09-30 1938-05-17 Rca Corp Electrode
US2595617A (en) * 1947-11-29 1952-05-06 Products & Licensing Corp Color television by multielement glow lamp screen
US2858480A (en) * 1955-05-02 1958-10-28 Shadowitz Albert Self-luminous screen, television receiving system and display system
US3091719A (en) * 1959-04-14 1963-05-28 Field Emission Corp Microwave transducer
US3334269A (en) * 1964-07-28 1967-08-01 Itt Character display panel having a plurality of glow discharge cavities including resistive ballast means exposed to the glow discharge therein

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2117842A (en) * 1935-09-30 1938-05-17 Rca Corp Electrode
US2595617A (en) * 1947-11-29 1952-05-06 Products & Licensing Corp Color television by multielement glow lamp screen
US2858480A (en) * 1955-05-02 1958-10-28 Shadowitz Albert Self-luminous screen, television receiving system and display system
US3091719A (en) * 1959-04-14 1963-05-28 Field Emission Corp Microwave transducer
US3334269A (en) * 1964-07-28 1967-08-01 Itt Character display panel having a plurality of glow discharge cavities including resistive ballast means exposed to the glow discharge therein

Cited By (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622828A (en) * 1969-12-01 1971-11-23 Us Army Flat display tube with addressable cathode
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3735186A (en) * 1971-03-10 1973-05-22 Philips Corp Field emission cathode
JPS5441193B2 (en) * 1972-02-11 1979-12-07
JPS4897473A (en) * 1972-02-11 1973-12-12
US3855499A (en) * 1972-02-25 1974-12-17 Hitachi Ltd Color display device
US4008412A (en) * 1974-08-16 1977-02-15 Hitachi, Ltd. Thin-film field-emission electron source and a method for manufacturing the same
US4908539A (en) * 1984-07-24 1990-03-13 Commissariat A L'energie Atomique Display unit by cathodoluminescence excited by field emission
FR2568394A1 (en) * 1984-07-27 1986-01-31 Commissariat Energie Atomique VISUALIZATION DEVICE BY CATHODOLUMINESCENCE EXCITED BY FIELD EMISSION
EP0172089A1 (en) * 1984-07-27 1986-02-19 Commissariat à l'Energie Atomique Display device using field emission excited cathode luminescence
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
USRE39633E1 (en) * 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
US5994832A (en) * 1992-01-22 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Display device having plural second substrates
US5402041A (en) * 1992-03-31 1995-03-28 Futaba Denshi Kogyo K.K. Field emission cathode
US5557177A (en) * 1994-01-18 1996-09-17 Engle; Craig D. Enhanced electron beam addressed storage target
US5451830A (en) * 1994-01-24 1995-09-19 Industrial Technology Research Institute Single tip redundancy method with resistive base and resultant flat panel display
US5698934A (en) * 1994-08-31 1997-12-16 Lucent Technologies Inc. Field emission device with randomly distributed gate apertures
US6020683A (en) * 1994-09-16 2000-02-01 Micron Technology, Inc. Method of preventing junction leakage in field emission displays
US20060226761A1 (en) * 1994-09-16 2006-10-12 Hofmann James J Method of preventing junction leakage in field emission devices
US6417605B1 (en) 1994-09-16 2002-07-09 Micron Technology, Inc. Method of preventing junction leakage in field emission devices
US5866979A (en) * 1994-09-16 1999-02-02 Micron Technology, Inc. Method for preventing junction leakage in field emission displays
US20030184213A1 (en) * 1994-09-16 2003-10-02 Hofmann James J. Method of preventing junction leakage in field emission devices
US6676471B2 (en) 1994-09-16 2004-01-13 Micron Technology, Inc. Method of preventing junction leakage in field emission displays
US5975975A (en) * 1994-09-16 1999-11-02 Micron Technology, Inc. Apparatus and method for stabilization of threshold voltage in field emission displays
US7268482B2 (en) 1994-09-16 2007-09-11 Micron Technology, Inc. Preventing junction leakage in field emission devices
US6398608B1 (en) 1994-09-16 2002-06-04 Micron Technology, Inc. Method of preventing junction leakage in field emission displays
US6712664B2 (en) 1994-09-16 2004-03-30 Micron Technology, Inc. Process of preventing junction leakage in field emission devices
US6987352B2 (en) 1994-09-16 2006-01-17 Micron Technology, Inc. Method of preventing junction leakage in field emission devices
US7629736B2 (en) 1994-09-16 2009-12-08 Micron Technology, Inc. Method and device for preventing junction leakage in field emission devices
US7098587B2 (en) 1994-09-16 2006-08-29 Micron Technology, Inc. Preventing junction leakage in field emission devices
US20060186790A1 (en) * 1994-09-16 2006-08-24 Hofmann James J Method of preventing junction leakage in field emission devices
US6186850B1 (en) 1994-09-16 2001-02-13 Micron Technology, Inc. Method of preventing junction leakage in field emission displays
US5923948A (en) * 1994-11-04 1999-07-13 Micron Technology, Inc. Method for sharpening emitter sites using low temperature oxidation processes
US6312965B1 (en) 1994-11-04 2001-11-06 Micron Technology, Inc. Method for sharpening emitter sites using low temperature oxidation process
US5712534A (en) * 1995-07-14 1998-01-27 Micron Display Technology, Inc. High resistance resistors for limiting cathode current in field emmision displays
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays
US5721560A (en) * 1995-07-28 1998-02-24 Micron Display Technology, Inc. Field emission control including different RC time constants for display screen and grid
US6291941B1 (en) 1995-07-28 2001-09-18 Micron Technology, Inc. Method and circuit for controlling a field emission display for reducing emission to grid
US5910791A (en) * 1995-07-28 1999-06-08 Micron Technology, Inc. Method and circuit for reducing emission to grid in field emission displays
US5663742A (en) * 1995-08-21 1997-09-02 Micron Display Technology, Inc. Compressed field emission display
US6242865B1 (en) 1995-08-30 2001-06-05 Micron Technology, Inc. Field emission display device with focusing electrodes at the anode and method for constructing same
US5773927A (en) * 1995-08-30 1998-06-30 Micron Display Technology, Inc. Field emission display device with focusing electrodes at the anode and method for constructing same
US5656886A (en) * 1995-12-29 1997-08-12 Micron Display Technology, Inc. Technique to improve uniformity of large area field emission displays
US6117294A (en) * 1996-01-19 2000-09-12 Micron Technology, Inc. Black matrix material and methods related thereto
US6296750B1 (en) 1996-01-19 2001-10-02 Micron Technology, Inc. Composition including black matrix material
US6068750A (en) * 1996-01-19 2000-05-30 Micron Technology, Inc. Faceplates having black matrix material
US6596141B2 (en) 1996-01-19 2003-07-22 Micron Technology, Inc. Field emission display having matrix material
US5854615A (en) * 1996-10-03 1998-12-29 Micron Display Technology, Inc. Matrix addressable display with delay locked loop controller
US6545783B1 (en) 1996-10-29 2003-04-08 Chorum Technologies Lp Optical wavelength add/drop multiplexer
US6512615B2 (en) 1996-10-29 2003-01-28 Chorum Technologies Lp Method and apparatus for wavelength multiplexing/demultiplexing
US6847786B2 (en) 1996-10-29 2005-01-25 Ec-Optics Technology, Inc. Compact wavelength filter using optical birefringence and reflective elements
US6545779B1 (en) 1996-10-29 2003-04-08 Chorum Technologies Lp System for dealing with faults in an optical link
US6346931B1 (en) 1996-11-12 2002-02-12 Micron Technology, Inc. Method and apparatus for adjustment of fed image
US6081246A (en) * 1996-11-12 2000-06-27 Micron Technology, Inc. Method and apparatus for adjustment of FED image
EP0959485A1 (en) * 1998-05-18 1999-11-24 Barco N.V. Cold cathode electron-emitting device
US6300713B1 (en) 1998-05-26 2001-10-09 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6326725B1 (en) 1998-05-26 2001-12-04 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6137212A (en) * 1998-05-26 2000-10-24 The United States Of America As Represented By The Secretary Of The Army Field emission flat panel display with improved spacer architecture
US6489726B2 (en) 1998-05-26 2002-12-03 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6501216B2 (en) 1998-05-26 2002-12-31 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6225739B1 (en) 1998-05-26 2001-05-01 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6229258B1 (en) 1998-05-26 2001-05-08 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6476548B2 (en) 1998-05-26 2002-11-05 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6519060B1 (en) 1999-06-04 2003-02-11 Chorum Technologies Lp Synchronous optical network in frequency domain
US20030057861A1 (en) * 2000-01-14 2003-03-27 Micron Technology, Inc. Radiation shielding for field emitters
US6860777B2 (en) 2000-01-14 2005-03-01 Micron Technology, Inc. Radiation shielding for field emitters
US6455841B2 (en) 2000-03-02 2002-09-24 Chorum Technologies Lp Optical wavelength router based on polarization interferometer
US20070046165A1 (en) * 2001-03-20 2007-03-01 Alexander Kastalsky Pixel structure for an edge-emitter field-emission display
US6515786B1 (en) 2001-08-03 2003-02-04 Chorum Technologies Lp Bandwidth variable wavelength router and method of operation
US7180234B2 (en) 2003-06-02 2007-02-20 Mitsubishi Denki Kabushiki Kaisha Field emission display device and method of manufacturing same
US20040239235A1 (en) * 2003-06-02 2004-12-02 Katsumi Oono Field emission display device and method of manufacturing same

Similar Documents

Publication Publication Date Title
US3500102A (en) Thin electron tube with electron emitters at intersections of crossed conductors
US6242865B1 (en) Field emission display device with focusing electrodes at the anode and method for constructing same
US3293474A (en) Phosphor dielectric storage target for cathode ray tube
US2449339A (en) Cathode-ray tube
US3622828A (en) Flat display tube with addressable cathode
US2803769A (en) Cathode ray apparatus
US3214631A (en) Tube having target with store and/or non-store sections
US3401294A (en) Storage tube
US3102212A (en) Cathode ray tube with low velocity deflection and post deflection beam acceleration
US4118651A (en) Internally supported flat tube display
US3447043A (en) Tunnel cathode in matrix form with integral storage feature
US3780326A (en) Symbol display tube with auxiliary electrode
US2953711A (en) Storage display system
US3723786A (en) Flat cathode-ray tube for direct viewing spot display
US4801850A (en) High brightness vacuum fluorescent display (VFD) devices
US2981863A (en) Storage display system
US3401293A (en) Mesa type combined direct viewing storage target and fluorescent screen for cathode ray tube
US3068360A (en) Radar light amplifier device
US3742286A (en) Fast writing bistable storage tube and method of operation
US2785328A (en) Storage tube
US2884558A (en) Cathode-ray tube for presenting stored and non-stored displays
US2999178A (en) Code sorter printer tube
US3673448A (en) Cathode ray tubes having row and column electrodes attached to opposite sides of insulating substrate
US3421042A (en) Electron beam scanner utilizing labyrinth structure
US3940651A (en) Target structure for electronic storage tubes of the coplanar grid type having a grid structure of at least one pedestal mounted layer