|
| US3974059 | 3 oct. 1974 | 10 août 1976 | | High vacuum ion plating device |
| US3988564 | 14 juin 1974 | 26 oct. 1976 | Hughes Aircraft Company | Ion beam micromachining method |
| US4082636 | 12 janv. 1976 | 4 avr. 1978 | Sharp Kabushiki Kaisha | Ion plating method |
| US4102021 | 30 sept. 1976 | 25 juil. 1978 | Matsushita Electric Industrial Co., Ltd. | Method for making capacitors with plated terminals |
| US4161418 | 23 mai 1978 | 17 juil. 1979 | Futaba Denshi Kogyo K. K. | Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers |
| US4187124 | 15 mars 1978 | 5 févr. 1980 | Agence Nationale de Valorisation de la Recherche (ANVAR) | Process for doping semiconductors |
| US4197814 | 17 janv. 1978 | 15 avr. 1980 | Futaba Denshi Kogyo K.K. | Apparatus for forming compound semiconductor thin-films |
| US4286545 | 1 oct. 1979 | 1 sept. 1981 | Futaba Denshi Kogyo K.K. | Apparatus for vapor depositing a stoichiometric compound |
| US4424104 | 12 mai 1983 | 3 janv. 1984 | International Business Machines Corporation | Single axis combined ion and vapor source |
| US4687939 | 6 nov. 1984 | 18 août 1987 | Hitachi, Ltd. | Method and apparatus for forming film by ion beam |
| US4876984 | 9 juin 1988 | 31 oct. 1989 | Ricoh Company, Ltd. | Apparatus for forming a thin film |
| US4902572 | 19 avr. 1988 | 20 févr. 1990 | The Boeing Company | Film deposition system |
| US4960072 | 5 août 1988 | 2 oct. 1990 | Ricoh Company, Ltd. | Apparatus for forming a thin film |
| US4982696 | 6 janv. 1989 | 8 janv. 1991 | Ricoh Company, Ltd. | Apparatus for forming thin film |
| US4987857 | 8 mai 1989 | 29 janv. 1991 | Anelva Corporation | Vacuum deposition apparatus with dust collector electrode |
| US5031408 | 11 sept. 1989 | 16 juil. 1991 | The Boeing Company | Film deposition system |
| US5133849 | 11 déc. 1989 | 28 juil. 1992 | Ricoh Company, Ltd. | Thin film forming apparatus |
| US5374456 | 23 déc. 1992 | 20 déc. 1994 | Hughes Aircraft Company | Surface potential control in plasma processing of materials |
| US5427668 | 22 oct. 1990 | 27 juin 1995 | Ricoh Company, Ltd. | Thin film deposition system |
| US5427671 | 26 mai 1992 | 27 juin 1995 | Applied Vision Limited | Ion vapor deposition apparatus and method |
| US5455061 | 23 déc. 1994 | 3 oct. 1995 | Hughes Aircraft Company | Nondestructive determination of plasma processing treatment characteristics |
| US5458754 | 15 avr. 1994 | 17 oct. 1995 | Multi-Arc Scientific Coatings | Plasma enhancement apparatus and method for physical vapor deposition |
| US6039849 | 28 oct. 1997 | 21 mars 2000 | Motorola, Inc. | Method for the manufacture of electronic components |
| US6139964 | 6 juin 1995 | 31 oct. 2000 | Multi-Arc Inc. | Plasma enhancement apparatus and method for physical vapor deposition |
| US6306175 | 27 févr. 1995 | 23 oct. 2001 | AEA Technology plc | Titanium alloy hip prosthesis |
| US6402904 | 16 mars 2001 | 11 juin 2002 | 4 Wave, Inc. | System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal |
| US6435131 | 12 sept. 2000 | 20 août 2002 | Tokyo Electron Limited | Ion flow forming method and apparatus |
| US6679976 | 2 mai 2002 | 20 janv. 2004 | 4Wave, Inc. | System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals |
| US6752912 | 27 août 1999 | 22 juin 2004 | Micron Technology, Inc. | Laser selection of ions for sputter deposition of titanium containing films |
| US6774050 | 31 janv. 2003 | 10 août 2004 | Micron Technology, Inc. | Doped aluminum oxide dielectrics |
| US6827824 | 12 avr. 1996 | 7 déc. 2004 | Micron Technology, Inc. | Enhanced collimated deposition |
| US6858865 | 23 févr. 2001 | 22 févr. 2005 | Micron Technology, Inc. | Doped aluminum oxide dielectrics |
| US7011733 | 1 juin 2004 | 14 mars 2006 | Micron Technology, Inc. | Method and apparatus for depositing films |
| US7157733 | 26 août 2005 | 2 janv. 2007 | Micron Technolgy, Inc. | Floating-gate field-effect transistors having doped aluminum oxide dielectrics |
| US7161174 | 26 août 2005 | 9 janv. 2007 | Micron Technolgy, Inc. | Field-effect transistors having doped aluminum oxide dielectrics |
| US7276729 | 26 août 2005 | 2 oct. 2007 | Micron Technology, Inc. | Electronic systems having doped aluminum oxide dielectrics |
| US7339191 | 26 août 2005 | 4 mars 2008 | Micron Technology, Inc. | Capacitors having doped aluminum oxide dielectrics |
| US7361928 | 24 mars 2004 | 22 avr. 2008 | Micron Technology, Inc. | Doped aluminum oxide dielectrics |
| US7750344 | 4 mars 2008 | 6 juil. 2010 | Micron Technology, Inc. | Doped aluminum oxide dielectrics |
