US3699404A - Negative effective electron affinity emitters with drift fields using deep acceptor doping - Google Patents
Negative effective electron affinity emitters with drift fields using deep acceptor doping Download PDFInfo
- Publication number
- US3699404A US3699404A US118491A US3699404DA US3699404A US 3699404 A US3699404 A US 3699404A US 118491 A US118491 A US 118491A US 3699404D A US3699404D A US 3699404DA US 3699404 A US3699404 A US 3699404A
- Authority
- US
- United States
- Prior art keywords
- layer
- gallium phosphide
- emitter
- cesium
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
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- Cold Cathode And The Manufacture (AREA)
Abstract
Description
Claims (5)
- 2. The emitter defined in claim 1 wherein said work function reducing material comprises a material selected from the group consisting of cesium and oxygen.
- 3. The emitter defined in claim 1 wherein said semiconductor is gallium phosphide.
- 4. The emitter defined in claim 3 wherein said acceptor impurity comprises iron and said concentration is on the order of 1017 to 1018 atoms per cubic centimeter.
- 5. The emitter defined in claim 1 comprising a potential barrier region adjacent a surface of said body opposite said emitter surface, for preventing diffusion of electrons away from said emitter surface toward said opposite surface.
- 6. The emitter defined in claim 1 wherein said barrier region comprises a P region having a thickness substantially less than the thickness of said semiconductor body between said emitter surface and said opposite surface.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11849171A | 1971-02-24 | 1971-02-24 |
Publications (1)
Publication Number | Publication Date |
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US3699404A true US3699404A (en) | 1972-10-17 |
Family
ID=22378929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US118491A Expired - Lifetime US3699404A (en) | 1971-02-24 | 1971-02-24 | Negative effective electron affinity emitters with drift fields using deep acceptor doping |
Country Status (1)
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US (1) | US3699404A (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3808477A (en) * | 1971-12-17 | 1974-04-30 | Gen Electric | Cold cathode structure |
US3845496A (en) * | 1973-09-10 | 1974-10-29 | Rca Corp | Infrared photocathode |
US3887936A (en) * | 1972-09-22 | 1975-06-03 | Philips Corp | Radiation sensitive solid state devices |
US3931633A (en) * | 1972-09-22 | 1976-01-06 | U.S. Philips Corporation | Electron tube including a photocathode |
US4060823A (en) * | 1975-04-11 | 1977-11-29 | English Electric Valve Company Limited | Electron-emissive semiconductor devices |
US4099198A (en) * | 1975-05-14 | 1978-07-04 | English Electric Valve Company Limited | Photocathodes |
US4352117A (en) * | 1980-06-02 | 1982-09-28 | International Business Machines Corporation | Electron source |
US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
US5077597A (en) * | 1990-08-17 | 1991-12-31 | North Carolina State University | Microelectronic electron emitter |
US5283501A (en) * | 1991-07-18 | 1994-02-01 | Motorola, Inc. | Electron device employing a low/negative electron affinity electron source |
US5315126A (en) * | 1992-10-13 | 1994-05-24 | Itt Corporation | Highly doped surface layer for negative electron affinity devices |
US5647998A (en) * | 1995-06-13 | 1997-07-15 | Advanced Vision Technologies, Inc. | Fabrication process for laminar composite lateral field-emission cathode |
US5703380A (en) * | 1995-06-13 | 1997-12-30 | Advanced Vision Technologies Inc. | Laminar composite lateral field-emission cathode |
US6577058B2 (en) * | 2001-10-12 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base |
WO2004088702A2 (en) * | 2003-03-25 | 2004-10-14 | Itt Manufacturing Enterprises, Inc. | Image intensifier and electron multiplier therefor |
US20050051764A1 (en) * | 2003-09-04 | 2005-03-10 | Huei-Pei Kuo | Anodizing process for improving electron emission in electronic devices |
US20060076504A1 (en) * | 2004-09-24 | 2006-04-13 | Fei Company | Electron source, and charged-particle apparatus comprising such an electron source |
US20080035943A1 (en) * | 2006-08-11 | 2008-02-14 | E. I. Dupont De Nemours And Company | Device chip carriers, modules, and methods of forming thereof |
US20230352612A1 (en) * | 2022-04-27 | 2023-11-02 | Taiwan Semiconductor Manufacturing Company Limited | Energy harvest and storage device for semiconductor chips and methods for forming the same |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2960659A (en) * | 1955-09-01 | 1960-11-15 | Bell Telephone Labor Inc | Semiconductive electron source |
US3105166A (en) * | 1959-01-15 | 1963-09-24 | Westinghouse Electric Corp | Electron tube with a cold emissive cathode |
US3121809A (en) * | 1961-09-25 | 1964-02-18 | Bell Telephone Labor Inc | Semiconductor device utilizing majority carriers with thin metal base between semiconductor materials |
US3150282A (en) * | 1962-11-13 | 1964-09-22 | Stanford Research Inst | High efficiency cathode structure |
US3387161A (en) * | 1964-12-02 | 1968-06-04 | Philips Corp | Photocathode for electron tubes |
US3409483A (en) * | 1964-05-01 | 1968-11-05 | Texas Instruments Inc | Selective deposition of semiconductor materials |
US3422322A (en) * | 1965-08-25 | 1969-01-14 | Texas Instruments Inc | Drift transistor |
US3458782A (en) * | 1967-10-18 | 1969-07-29 | Bell Telephone Labor Inc | Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production |
US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
-
1971
- 1971-02-24 US US118491A patent/US3699404A/en not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2960659A (en) * | 1955-09-01 | 1960-11-15 | Bell Telephone Labor Inc | Semiconductive electron source |
US3105166A (en) * | 1959-01-15 | 1963-09-24 | Westinghouse Electric Corp | Electron tube with a cold emissive cathode |
US3121809A (en) * | 1961-09-25 | 1964-02-18 | Bell Telephone Labor Inc | Semiconductor device utilizing majority carriers with thin metal base between semiconductor materials |
US3150282A (en) * | 1962-11-13 | 1964-09-22 | Stanford Research Inst | High efficiency cathode structure |
US3409483A (en) * | 1964-05-01 | 1968-11-05 | Texas Instruments Inc | Selective deposition of semiconductor materials |
US3387161A (en) * | 1964-12-02 | 1968-06-04 | Philips Corp | Photocathode for electron tubes |
US3422322A (en) * | 1965-08-25 | 1969-01-14 | Texas Instruments Inc | Drift transistor |
US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
US3458782A (en) * | 1967-10-18 | 1969-07-29 | Bell Telephone Labor Inc | Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production |
Non-Patent Citations (3)
Title |
---|
Geppert, Proceedings I.E.E.E., Vol. 54, No. 1, Jan. 1966 * |
J. Scheer, Philips Res. Reports, 15, 584 (1960). * |
Scheer et al., Solid State Communications, 3, 189 193, 1965. * |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3808477A (en) * | 1971-12-17 | 1974-04-30 | Gen Electric | Cold cathode structure |
US3887936A (en) * | 1972-09-22 | 1975-06-03 | Philips Corp | Radiation sensitive solid state devices |
US3931633A (en) * | 1972-09-22 | 1976-01-06 | U.S. Philips Corporation | Electron tube including a photocathode |
US3845496A (en) * | 1973-09-10 | 1974-10-29 | Rca Corp | Infrared photocathode |
US4060823A (en) * | 1975-04-11 | 1977-11-29 | English Electric Valve Company Limited | Electron-emissive semiconductor devices |
US4099198A (en) * | 1975-05-14 | 1978-07-04 | English Electric Valve Company Limited | Photocathodes |
US4352117A (en) * | 1980-06-02 | 1982-09-28 | International Business Machines Corporation | Electron source |
US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
US5077597A (en) * | 1990-08-17 | 1991-12-31 | North Carolina State University | Microelectronic electron emitter |
US5283501A (en) * | 1991-07-18 | 1994-02-01 | Motorola, Inc. | Electron device employing a low/negative electron affinity electron source |
US5315126A (en) * | 1992-10-13 | 1994-05-24 | Itt Corporation | Highly doped surface layer for negative electron affinity devices |
US5354694A (en) * | 1992-10-13 | 1994-10-11 | Itt Corporation | Method of making highly doped surface layer for negative electron affinity devices |
US5647998A (en) * | 1995-06-13 | 1997-07-15 | Advanced Vision Technologies, Inc. | Fabrication process for laminar composite lateral field-emission cathode |
US5703380A (en) * | 1995-06-13 | 1997-12-30 | Advanced Vision Technologies Inc. | Laminar composite lateral field-emission cathode |
US6577058B2 (en) * | 2001-10-12 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base |
WO2004088702A2 (en) * | 2003-03-25 | 2004-10-14 | Itt Manufacturing Enterprises, Inc. | Image intensifier and electron multiplier therefor |
WO2004088702A3 (en) * | 2003-03-25 | 2005-03-03 | Itt Mfg Enterprises Inc | Image intensifier and electron multiplier therefor |
JP2006521680A (en) * | 2003-03-25 | 2006-09-21 | アイティーティー・マニュファクチャリング・エンタープライジズ・インコーポレーテッド | Image intensifier and electron multiplier for the same |
US20050051764A1 (en) * | 2003-09-04 | 2005-03-10 | Huei-Pei Kuo | Anodizing process for improving electron emission in electronic devices |
US20060076504A1 (en) * | 2004-09-24 | 2006-04-13 | Fei Company | Electron source, and charged-particle apparatus comprising such an electron source |
US7288773B2 (en) * | 2004-09-24 | 2007-10-30 | Fei Company | Electron source, and charged-particle apparatus comprising such an electron source |
US20080035943A1 (en) * | 2006-08-11 | 2008-02-14 | E. I. Dupont De Nemours And Company | Device chip carriers, modules, and methods of forming thereof |
US8710523B2 (en) * | 2006-08-11 | 2014-04-29 | E I Du Pont De Nemours And Company | Device chip carriers, modules, and methods of forming thereof |
US20230352612A1 (en) * | 2022-04-27 | 2023-11-02 | Taiwan Semiconductor Manufacturing Company Limited | Energy harvest and storage device for semiconductor chips and methods for forming the same |
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Legal Events
Date | Code | Title | Description |
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STCF | Information on status: patent grant |
Free format text: PATENTED FILE - (OLD CASE ADDED FOR FILE TRACKING PURPOSES) |
|
AS | Assignment |
Owner name: NPD SUBSIDIARY INC., 38 Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:RCA CORPORATION;REEL/FRAME:004815/0001 Effective date: 19870625 |
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AS | Assignment |
Owner name: BURLE INDUSTRIES, INC. Free format text: MERGER;ASSIGNOR:NPD SUBSIDIARY, INC., 38;REEL/FRAME:004940/0936 Effective date: 19870714 Owner name: BANCBOSTON FINANCIAL COMPANY Free format text: SECURITY INTEREST;ASSIGNOR:BURLE INDUSTRIES, INC., A CORP. OF PA;REEL/FRAME:004940/0952 Effective date: 19870714 Owner name: BURLE TECHNOLOGIES, INC., A CORP. OF DE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:BURLE INDUSTRIES, INC., A CORP. OF PA;REEL/FRAME:004940/0962 Effective date: 19870728 |