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Brevets

Référencé par

Brevet citant Date de dépôt Date de délivrance Cessionnaire d'origine Titre
US40438892 janv. 197623 août 1977Sperry Rand CorporationMethod of and apparatus for the radio frequency sputtering of a thin film
US404671216 juin 19756 sept. 1977United Kingdom Atomic Energy AuthorityCatalysts sputtered on substantially nonporous low surface area particulate supports
US428448926 sept. 197818 août 1981Coulter Systems CorporationPower transfer network
US433381426 déc. 19798 juin 1982Western Electric Company, Inc.Methods and apparatus for improving an RF excited reactive gas plasma
US455781920 juil. 198410 déc. 1985Varian Associates, Inc.System for igniting and controlling a wafer processing plasma
US47822351 oct. 19861 nov. 1988Centre National de la Recherche ScientifiqueSource of ions with at least two ionization chambers, in particular for forming chemically reactive ion beams
US493116928 sept. 19885 juin 1990Leybold AktiengesellschaftApparatus for coating a substrate with dielectrics
US508254625 févr. 199121 janv. 1992Leybold AktiengesellschaftApparatus for the reactive coating of a substrate
US542397110 janv. 199413 juin 1995Leybold AktiengesellschaftArrangement for coating substrates
US549829117 mars 199512 mars 1996Leybold AktiengesellschaftArrangement for coating or etching substrates
US566516714 févr. 19949 sept. 1997Tokyo Electron Kabushiki KaishaPlasma treatment apparatus having a workpiece-side electrode grounding circuit
US573351121 nov. 199531 mars 1998The BOC Group, Inc.Power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
US579036531 juil. 19964 août 1998Applied Materials, Inc.Method and apparatus for releasing a workpiece from and electrostatic chuck
US581419525 oct. 199629 sept. 1998The Boc Group, Inc.Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US621054128 avr. 19983 avr. 2001International Business Machines CorporationProcess and apparatus for cold copper deposition to enhance copper plating fill
US624822018 mars 199919 juin 2001Hyundai Electronics Industries Co., Ltd.Radio frequency sputtering apparatus and film formation method using same
US767871020 déc. 200616 mars 2010Applied Materials, Inc.Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US778132726 oct. 200624 août 2010Novellus Systems, Inc.Resputtering process for eliminating dielectric damage
US783783820 déc. 200623 nov. 2010Applied Materials, Inc.Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US784260524 mai 200730 nov. 2010Novellus Systems, Inc.Atomic layer profiling of diffusion barrier and metal seed layers
US785514724 mai 200721 déc. 2010Novellus Systems, Inc.Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US789751624 mai 20071 mars 2011Novellus Systems, Inc.Use of ultra-high magnetic fields in resputter and plasma etching
US792288024 mai 200712 avr. 2011Novellus Systems, Inc.Method and apparatus for increasing local plasma density in magnetically confined plasma
US801752316 mai 200813 sept. 2011Novellus Systems, Inc.Deposition of doped copper seed layers having improved reliability
US804348430 juil. 200725 oct. 2011Novellus Systems, Inc.Methods and apparatus for resputtering process that improves barrier coverage
US818266227 mars 200922 mai 2012Sputtering Components, Inc.Rotary cathode for magnetron sputtering apparatus

Dessins