US3811185A - Method for enhancing v{11 ga thin film growth - Google Patents

Method for enhancing v{11 ga thin film growth Download PDF

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US3811185A
US3811185A US00344402A US34440273A US3811185A US 3811185 A US3811185 A US 3811185A US 00344402 A US00344402 A US 00344402A US 34440273 A US34440273 A US 34440273A US 3811185 A US3811185 A US 3811185A
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sheath
superconductor
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D Howe
R Meussner
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0184—Manufacture or treatment of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/801—Composition
    • Y10S505/805—Alloy or metallic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/82—And etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/917—Mechanically manufacturing superconductor
    • Y10S505/918—Mechanically manufacturing superconductor with metallurgical heat treating
    • Y10S505/919—Reactive formation of superconducting intermetallic compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/917—Mechanically manufacturing superconductor
    • Y10S505/918—Mechanically manufacturing superconductor with metallurgical heat treating
    • Y10S505/919—Reactive formation of superconducting intermetallic compound
    • Y10S505/921—Metal working prior to treating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/917—Mechanically manufacturing superconductor
    • Y10S505/928—Metal deforming
    • Y10S505/93—Metal deforming by drawing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49014—Superconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819—Group VB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component

Definitions

  • This invention relates to the formation of superconductive materials more particularly it relates to a novel process by which both the rate of growth of the superconductive material and the properties of said material magnetic land transportation systems, naval propulsion systems, aircraft ac generators, and large laboratory research magnets.
  • Superconducting generators may be only one-tenth to one-third the size of conventional electrical generators of the same power rating. Savings are realized in operating these systems when superconductive materials with high critical temperature, critical current, and critical field are used.
  • the intermetallic A15 compounds i.e. VGa, posses a high critical temperature and one of the highest critical fields as well as a good critical current-carrying capacity.
  • the V Ga intermetallic compound is extremely brittle andis very difficult to work metallurgically.
  • V Ga has been formed through a solid-state reaction process. The material is processed as a ductile Cu-Ga wire with a purevanadium core, and a V Ga interfacial layer is formed by a hightemperature reaction as the last step in the processing.
  • Superconductors produced in this manner exhibit a critical temperature of about 14K.
  • superconductors are formed which not only exhibit a critical temperature of about K, but exhibit a high rate of growth as well.
  • the invention relates to a process of eliminating any diffusion barrier between the interfacial layers of the solid-state reactants.
  • Another object of the invention is to provide a method by which the superconductive material produced exhibits a high critical temperature, critical current and field.
  • FIG. 1 illustrates a cross section of an unassembled sheath, rod and end plug used to produce the superconductor.
  • FIG. 2 is an end view of the rod and the end plug.
  • FIG. 3 is a cross section of the sheath, rod and plug assembled as a composite.
  • FIG. 4 is a flow chart describing the steps of the invention.
  • FIG. 5 illustrates a graphic comparison of the rate of growth of the superconductor produced in accordance with the present invention and the rate of growth of a superconductor produced according to prior art techniques.
  • FIG. 6 illustrates a graphic comparison of the critical temperature of a superconductor produced in accordance with the present invention and the critical temperature of a superconductor produced according to prior art techniques.
  • FIG. 1 illustrates in an unassembled state the elements used to produce the superconductor.
  • the sheath, 10, provides a tapered bore 13 into which the core rod 11 and the copper end plug 12 are inserted as illustrated by FIG. 3.
  • the diameter of the bore relative to that of the core rod is such that when assembled an annular air space, 15, of about 0.005 inches is created.
  • the end plug 12 must be of sufficient length so that when assembled as the composite illustrated by FIG. 3, the end plug extends out of the sheath.
  • the end plug is provided with axial grooves, 16, about its periphery so that air can be evacuated from the annular space 15.
  • the core rod 11 also has indentations or grooves, 14, at one end.
  • the composition of the sheath l0and core rod 11 are dependent upon the composition of the superconductor to be formed.
  • the following table lists the compositions of the various elements.
  • the sheath is formed of a Cu alloy while the core rod is formed from an alloy of the materials desired to form the superconductor.
  • the composition of the core rod can be referred to as V- xGa, Nb-ySn or V-zSi.
  • x ranges from 0 to 8 atomic percent
  • y ranges from 0 to 2 atomic percent
  • z ranges from 0 to 4.5 atomic percent.
  • the superconductor is then formed by the process outlined in FIG. 4.
  • First the rod is annealed at a temperature of about 800C for approximately 10 to 20 hours.
  • the rod is then cleaned by etching it with a nitric HF solution.
  • a preferred solution is 10 H O:l0 HNO 4HF.
  • the composite is then formed by placiig'tlie'rod l l arid "end plug 12 within the sheath 10 as shown by FIG. 3, leaving an annular air space 15.
  • the composite is placed under high vacuum in the range of 1 X 10 Torr or better so that the air space 15 is evacuated and the composite is then sealed.
  • the sealing can be accomplished by welding the end plug to the sheath with the use of an electron beam, laser and the like. By vacuum sealing the composite, any air and other impurities which could cause a diffusion barrier are removed.
  • the composite is then swaged or drawn so that it is reduced in diameter.
  • This results in a co-axial wire which is either placed in an evacuated silica ampoule and heated in a furnace at constant temperature between 550C and 880C or heated between 550 to 880C in an inert atmosphere under high vacuum. During this heat treatment the superconductor is formed or grown" by diffusion occurring at the interface of the rod and sheath.
  • the coaxial wire is removed from the'furnace and is ready to be used as a superconductive material.
  • the growth rate of the superconductor is enhanced.
  • FIG. 5 illustrates the results of various tests comparing the growth rate of superconductors formed according to the present invention and that grown according to the technique taught by M. Suenaga and W. B. Sampson, Appl. Phys. Ltrs., 18:54, June 15, 1971.
  • the plot relates the thickness of the superconductor, V Ga, versus time at a temperature of 700C.
  • Plot A refers to the prior art.
  • Plots B and C are of those superconductors formed by the present invention.
  • the results of Plot B were taken from tests in which the core rod used was pure vanadium (V) while the results of plot C were taken from tests in which the core rod used was a V-Ga alloy in which 6.1 atomic percent Ga was present.
  • the graph clearly shows that for any given period of time the rate of growth of the superconductor produced in accordance with the present invention was superior to that of the prior art. It also shows that the alloyed core resulted in a higher rate of growth than the pure V COTE.
  • FIG. 6 illustrates the results of various tests comparing the critical temperature of V Ga grown by the process of the present invention and that grown according to the Appl. Phys. Ltrs. article referred to above.
  • Plot A refers to the prior art.
  • Plot B refers to V Ga grown in accordance with the invention in which a V-Ga core rod containing 6.1 atomic percent Ga was used. The figure illustrates that critical temperature of V Ga grown by the process of the invention is higher than that of the prior art regardless of the formation temperature.
  • the process of the invention results in not only a superconductor having superior properties, but the rate of growth of the suprrconductor is also superior to that of the prior art.
  • a sheath comprising an alloy selected from the group consisting of Cu-Ga, Cu-Sn, and Cu-Si, respectively;
  • a core rod having grooves at one end, said rod being composed of an alloy selected from the 4 group consisting of V-xGa, Nb-ySn, and V-zSi, respectively, wherein x is 0 to 8 atomic percent, y is 0 to 2 atomic percent and z is 0 to 4.5 atomic percent;
  • a sheath comprising an alloy selected from the group consisting of Cu-Ga, Cu-Sn, and Cu-Si, respectively;
  • a core rod having grooves at one end, said rod being composed of an alloy selected from the group consisting of V-xGa, Nb-ySn, and V-zSi, respectively, wherein x is 0 to 8 atomic percent, y is 0 to 2 atomic percent and z is 0 to 4.5 atomic percent;

Abstract

A process for enhancing the growth of A15 intermetallic superconductors which removes impurities that are likely to form diffusion barriers impeding growth.

Description

o i i United States Patent 1191 1111 3,811,185 Howe et a1. May 21, 1974 [54] METHOD FOR ENHANCING V GA THIN 3,618,206 11/1971 Gubler et a1 .f. 29/599 FILM GROWTH 3,625,662 12/1971 Roberts et a1. 3,713,898 l/1973 Giorgi et a1 1 Inventors: David G Howe, Gre belt, d-; 3,728,165 4/1973 1166/1611 29/599 x Russell A. Meussner, Washington, 3,731,374 5/1973 Suenaga et al..... D.C. 3,737,824 6/1973 Coies 174/D1G. 6 [73] Assignee: The United itatt: of America as FOREIGN PATENTS OR APPLICATIONS m f 'a g g: sgcetary 0 the 1,039,316 8/1966 Great Britain 29/599 [22] Filed: 1973 Primary Examiner-Charles W. Lanham [21] Appl. No.: 344,402 Assistant Examiner-D. C. Reiley, 111
Attorney, Agent, or Firm-R. S. Sciascia; Arthur L. [52] US. Cl 29/599, 29/199, 148/127, Branning l74/D1G. 6, 335/216 [51] Int. Cl HOlv 11/14 [58] Field of Search 29/599, 199; 174/126 CP, S ACT 174mm 6; 335/216; 148/127 A process for enhancing the growth of A15 intermetallic superconductors which removes impurities that [56] g gfig gif are likely to form diffusion barriers impeding growth. 3,336,658 8/1967 Husni 174/D1G. 6 7 Claims, 6 Drawing Figures FORM SHEATH ROD AND QB ENDPLUG HEAT 1 FORM ROD COMPOSITE SWAGE' SEAL UNDER VACUUM TENTEQMAY 21 I974 Kw fl PATENTEDIAY 2 1 I974 SHEET 2 OF 2 FORM COMPOSITE SEAL UNDER VACUUM ETCH ROD SWAGE ANNEAL ROD HEAT FORM SHEATH ROD AND ENDPLUG FIG. 4.
hwzomezvwmwzvaik 89 s00 FORMATION TEMPERATURE PC) METHOD FOR ENHANCING V 3 GA THIN GROWTH BACKGROUND OF THE INVENTION This invention relates to the formation of superconductive materials more particularly it relates to a novel process by which both the rate of growth of the superconductive material and the properties of said material magnetic land transportation systems, naval propulsion systems, aircraft ac generators, and large laboratory research magnets. Superconducting generators may be only one-tenth to one-third the size of conventional electrical generators of the same power rating. Savings are realized in operating these systems when superconductive materials with high critical temperature, critical current, and critical field are used.
The intermetallic A15 compounds, i.e. VGa, posses a high critical temperature and one of the highest critical fields as well as a good critical current-carrying capacity. However, the V Ga intermetallic compound is extremely brittle andis very difficult to work metallurgically. Recently, V Ga has been formed through a solid-state reaction process. The material is processed as a ductile Cu-Ga wire with a purevanadium core, and a V Ga interfacial layer is formed by a hightemperature reaction as the last step in the processing. Superconductors produced in this manner exhibit a critical temperature of about 14K. By the process of the present invention superconductors are formed which not only exhibit a critical temperature of about K, but exhibit a high rate of growth as well.
SUMMARY OF THE INVENTION Briefly the invention relates to a process of eliminating any diffusion barrier between the interfacial layers of the solid-state reactants.
It is therefore an object of the invention to provide a process by which superconductive materials are produced.
It is another object of the invention to enhance the rate of growth of thesuperconductive material.
Another object of the invention is to provide a method by which the superconductive material produced exhibits a high critical temperature, critical current and field.
Other objects, advantages and novel features of the invention will become apparent from the following detailed description of the invention when considered in conjunction with the accompanying drawings wherein:
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates a cross section of an unassembled sheath, rod and end plug used to produce the superconductor.
FIG. 2 is an end view of the rod and the end plug.
FIG. 3 is a cross section of the sheath, rod and plug assembled as a composite.
FIG. 4 is a flow chart describing the steps of the invention.
FIG. 5 illustrates a graphic comparison of the rate of growth of the superconductor produced in accordance with the present invention and the rate of growth of a superconductor produced according to prior art techniques.
FIG. 6 illustrates a graphic comparison of the critical temperature of a superconductor produced in accordance with the present invention and the critical temperature of a superconductor produced according to prior art techniques.
DETAILED DESCRIPTION The invention relates to a novel process for producing superconductive materials, such as V Ga, Nb Sn and V Si. FIG. 1 illustrates in an unassembled state the elements used to produce the superconductor. The sheath, 10, provides a tapered bore 13 into which the core rod 11 and the copper end plug 12 are inserted as illustrated by FIG. 3. The diameter of the bore relative to that of the core rod is such that when assembled an annular air space, 15, of about 0.005 inches is created. The end plug 12 must be of sufficient length so that when assembled as the composite illustrated by FIG. 3, the end plug extends out of the sheath. The end plug is provided with axial grooves, 16, about its periphery so that air can be evacuated from the annular space 15. The core rod 11 also has indentations or grooves, 14, at one end. These elements, the sheath, rod and end plug can be produced by an known technique, such as are melting or induction melting.
While the end plug is copper, the composition of the sheath l0and core rod 11 are dependent upon the composition of the superconductor to be formed. The following table lists the compositions of the various elements.
It can be seen then that the sheath is formed of a Cu alloy while the core rod is formed from an alloy of the materials desired to form the superconductor. The composition of the core rod can be referred to as V- xGa, Nb-ySn or V-zSi. For best results, x ranges from 0 to 8 atomic percent, y ranges from 0 to 2 atomic percent and z ranges from 0 to 4.5 atomic percent.
Having formed the sheath, rod and end plug, the superconductor is then formed by the process outlined in FIG. 4. First the rod is annealed at a temperature of about 800C for approximately 10 to 20 hours. The rod is then cleaned by etching it with a nitric HF solution. A preferred solution is 10 H O:l0 HNO 4HF. The compositeis then formed by placiig'tlie'rod l l arid "end plug 12 within the sheath 10 as shown by FIG. 3, leaving an annular air space 15. The composite is placed under high vacuum in the range of 1 X 10 Torr or better so that the air space 15 is evacuated and the composite is then sealed. The sealing can be accomplished by welding the end plug to the sheath with the use of an electron beam, laser and the like. By vacuum sealing the composite, any air and other impurities which could cause a diffusion barrier are removed.
The composite is then swaged or drawn so that it is reduced in diameter. This results in a co-axial wire which is either placed in an evacuated silica ampoule and heated in a furnace at constant temperature between 550C and 880C or heated between 550 to 880C in an inert atmosphere under high vacuum. During this heat treatment the superconductor is formed or grown" by diffusion occurring at the interface of the rod and sheath.
When the superconducting layer has been formed, the coaxial wire is removed from the'furnace and is ready to be used as a superconductive material.
By providing the rod and end plug with grooves etching the rod to both clean as well as form an active surface and sealing the composite under vacuum, the growth rate of the superconductor is enhanced.
FIG. 5 illustrates the results of various tests comparing the growth rate of superconductors formed according to the present invention and that grown according to the technique taught by M. Suenaga and W. B. Sampson, Appl. Phys. Ltrs., 18:54, June 15, 1971. The plot relates the thickness of the superconductor, V Ga, versus time at a temperature of 700C. Plot A refers to the prior art. Plots B and C are of those superconductors formed by the present invention. The results of Plot B were taken from tests in which the core rod used was pure vanadium (V) while the results of plot C were taken from tests in which the core rod used was a V-Ga alloy in which 6.1 atomic percent Ga was present. The graph clearly shows that for any given period of time the rate of growth of the superconductor produced in accordance with the present invention was superior to that of the prior art. It also shows that the alloyed core resulted in a higher rate of growth than the pure V COTE.
FIG. 6 illustrates the results of various tests comparing the critical temperature of V Ga grown by the process of the present invention and that grown according to the Appl. Phys. Ltrs. article referred to above. Plot A refers to the prior art. Plot B refers to V Ga grown in accordance with the invention in which a V-Ga core rod containing 6.1 atomic percent Ga was used. The figure illustrates that critical temperature of V Ga grown by the process of the invention is higher than that of the prior art regardless of the formation temperature. v
The process of the invention results in not only a superconductor having superior properties, but the rate of growth of the suprrconductor is also superior to that of the prior art.
Obviously many modifications and variations of the present invention are possible in light of the above teachings. lt is therefore to be understood that within the scope of the appended claimsthe-invention may be practiced otherwise than as specifically described.
What is claimed and desired to be secured by Letters Patent of the United States is:
l. A method of forming a superconductor selected from the group consisting of V Ga, Nb sn, and V Si, respectively, said method comprising:
forming a sheath comprising an alloy selected from the group consisting of Cu-Ga, Cu-Sn, and Cu-Si, respectively;
forming a core rod having grooves at one end, said rod being composed of an alloy selected from the 4 group consisting of V-xGa, Nb-ySn, and V-zSi, respectively, wherein x is 0 to 8 atomic percent, y is 0 to 2 atomic percent and z is 0 to 4.5 atomic percent;
forming a copper end plug having axial grooves about its periphery;
annealing said core rod;
etching said rod with a nitric HF solution;
placing said rod and plug within said sheath whereby a composite is formed having an annular air space between said sheath and said rod, said plug being of sufiicient length to overlap the end of said sheath;
subjecting said composite to vacuum;
sealing said composite while under vacuum;
reducing the diameter of said composite; and
heating said reduced composite at 550C to 880C whereby said superconductor is formed.
2. A method according to claim 1 wherein said annealing step is carried out at 800C for about 10 to hours.
3. A method according to claim 1 wherein said nitric HF solution is 10 H O:10 HNO 4HF.
4. A method according to claim 1 wherein the composite is subjected to a vacuum pressure of l X 10 Torr.
5. A method according to claim 1 wherein the composite is reduced in diameter by swaging.
6. A method according to claim 1 wherein the composite is reduced in diameter by drawing.
7. A method of forming a superconductor selected from the group consisting of V Ga, Nb Sn, and V Si,
respectively, said method comprising:
forming a sheath comprising an alloy selected from the group consisting of Cu-Ga, Cu-Sn, and Cu-Si, respectively;
forming a core rod having grooves at one end, said rod being composed of an alloy selected from the group consisting of V-xGa, Nb-ySn, and V-zSi, respectively, wherein x is 0 to 8 atomic percent, y is 0 to 2 atomic percent and z is 0 to 4.5 atomic percent;
forming a copper end plug having axial grooves about its periphery;
annealing said core rod at 800C for about 10 to 20 hours;
etching said rod with a solution of 10 H O:l0
I- INO 4HF;
placing said rod and plug within said sheath whereby a composite is formed having an annular air space between said sheath and said rod, said plug being of sufiicient length to overlap the end of said sheath;
subjecting said composite to vacuum at l X 10' Torr;
sealing said composite while under vacuum;
swaging said composite to reduce to diameter of said composite; and
heating said composite at 550C to 880C whereby said superconductor is formed.

Claims (6)

  1. 2. A method according to claim 1 wherein said annealing step is carried out at 800*C for about 10 to 20 hours.
  2. 3. A method according to claim 1 wherein said nitric HF solution is 10 H2O:10 HNO34HF.
  3. 4. A method according to claim 1 wherein the composite is subjected to a vacuum pressure of 1 X 10 5 Torr.
  4. 5. A method according to claim 1 wherein the composite is reduced in diameter by swaginG.
  5. 6. A method according to claim 1 wherein the composite is reduced in diameter by drawing.
  6. 7. A method of forming a superconductor selected from the group consisting of V3Ga, Nb3Sn, and V3Si, respectively, said method comprising: forming a sheath comprising an alloy selected from the group consisting of Cu-Ga, Cu-Sn, and Cu-Si, respectively; forming a core rod having grooves at one end, said rod being composed of an alloy selected from the group consisting of V-xGa, Nb-ySn, and V-zSi, respectively, wherein x is 0 to 8 atomic percent, y is 0 to 2 atomic percent and z is 0 to 4.5 atomic percent; forming a copper end plug having axial grooves about its periphery; annealing said core rod at 800*C for about 10 to 20 hours; etching said rod with a solution of 10 H2O:10 HNO34HF; placing said rod and plug within said sheath whereby a composite is formed having an annular air space between said sheath and said rod, said plug being of sufficient length to overlap the end of said sheath; subjecting said composite to vacuum at 1 X 10 5 Torr; sealing said composite while under vacuum; swaging said composite to reduce to diameter of said composite; and heating said composite at 550*C to 880*C whereby said superconductor is formed.
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US3926684A (en) * 1974-11-25 1975-12-16 Us Navy High critical current superconductors and preparation thereof
US4190701A (en) * 1979-04-06 1980-02-26 The United States Of America As Represented By The Secretary Of The Navy V3 Ga Composite superconductor
US4409297A (en) * 1981-05-14 1983-10-11 The United States Of America As Represented By The Secretary Of The Navy Composite superconductors
US4489219A (en) * 1982-07-01 1984-12-18 The United States Of America As Represented By The United States Department Of Energy A-15 Superconducting composite wires and a method for making
US4888870A (en) * 1987-08-13 1989-12-26 Matsushita Electric Works, Ltd. Hair trimmer
US7068372B1 (en) 2003-01-28 2006-06-27 Silicon Light Machines Corporation MEMS interferometer-based reconfigurable optical add-and-drop multiplexor
CN102568694A (en) * 2010-12-23 2012-07-11 吴仕驹 High-temperature superconductor and production method thereof

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US3336658A (en) * 1963-12-06 1967-08-22 Rca Corp Superconductive articles
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3926684A (en) * 1974-11-25 1975-12-16 Us Navy High critical current superconductors and preparation thereof
US4190701A (en) * 1979-04-06 1980-02-26 The United States Of America As Represented By The Secretary Of The Navy V3 Ga Composite superconductor
US4409297A (en) * 1981-05-14 1983-10-11 The United States Of America As Represented By The Secretary Of The Navy Composite superconductors
US4489219A (en) * 1982-07-01 1984-12-18 The United States Of America As Represented By The United States Department Of Energy A-15 Superconducting composite wires and a method for making
US4888870A (en) * 1987-08-13 1989-12-26 Matsushita Electric Works, Ltd. Hair trimmer
US7068372B1 (en) 2003-01-28 2006-06-27 Silicon Light Machines Corporation MEMS interferometer-based reconfigurable optical add-and-drop multiplexor
CN102568694A (en) * 2010-12-23 2012-07-11 吴仕驹 High-temperature superconductor and production method thereof

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