|
| US4149923 | 16 juin 1978 | 17 avr. 1979 | Tokyo Ohka Kogyo Kabushiki Kaisha | Apparatus for the treatment of wafer materials by plasma reaction |
| US4178877 | 13 mars 1978 | 18 déc. 1979 | Fujitsu Limited | Apparatus for plasma treatment of semiconductor materials |
| US4252595 | 28 mars 1978 | 24 févr. 1981 | Tokyo Shibaura Electric Co., Ltd. | Etching apparatus using a plasma |
| US4292153 | 14 mars 1980 | 29 sept. 1981 | Fujitsu Limited | Method for processing substrate materials by means of plasma treatment |
| US4352974 | 29 juil. 1980 | 5 oct. 1982 | Hitachi, Ltd. | Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching |
| US4474828 | 30 mars 1983 | 2 oct. 1984 | Sperry Corporation | Method of controlling the supercurrent of a Josephson junction device |
| US4487161 | 28 oct. 1980 | 11 déc. 1984 | VLSI Technology Research Association | Semiconductor device manufacturing unit |
| US4600563 | 5 févr. 1985 | 15 juil. 1986 | Psi Star Incorporated | Plasma reactor with voltage transformer |
| US4687560 | 16 août 1985 | 18 août 1987 | The United States of America as represented by the United States Department of Energy | Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides |
| US4711767 | 30 avr. 1986 | 8 déc. 1987 | PSI Star | Plasma reactor with voltage transformer |
| US4898715 | 22 nov. 1988 | 6 févr. 1990 | | Process and apparatus for dry sterilization of medical devices and materials |
| US4909995 | 22 nov. 1988 | 20 mars 1990 | | Process and apparatus for dry sterilization of medical devices and materials |
| US4990229 | 13 juin 1989 | 5 févr. 1991 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5200158 | 19 sept. 1991 | 6 avr. 1993 | | Process and apparatus for dry sterilization of medical devices and materials |
| US5433780 | 19 nov. 1993 | 18 juil. 1995 | Tokyo Electron Limited | Vacuum processing apparatus and exhaust system that prevents particle contamination |
| US5532447 | 6 déc. 1993 | 2 juil. 1996 | Aluminum Company of America | Method of cleaning an aluminum surface by plasma treatment |
| US5537004 | 29 avr. 1994 | 16 juil. 1996 | Tokyo Electron Limited | Low frequency electron cyclotron resonance plasma processor |
| US5554223 | 4 mars 1994 | 10 sept. 1996 | Tokyo Electron Limited | Plasma processing apparatus with a rotating electromagnetic field |
| US5698168 | 1 nov. 1995 | 16 déc. 1997 | Chorus Corporation | Unibody gas plasma source technology |
| US5944193 | 27 juin 1997 | 31 août 1999 | NEC Corporation | Wafer storing system having vessel coating with ozone-proof material and method of storing semiconductor wafer |
| US5962923 | 7 août 1995 | 5 oct. 1999 | Applied Materials, Inc. | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches |
| US5976259 | 9 nov. 1995 | 2 nov. 1999 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
| US6045666 | 24 nov. 1997 | 4 avr. 2000 | Applied Materials, Inc. | Aluminum hole filling method using ionized metal adhesion layer |
| US6136095 | 6 oct. 1997 | 24 oct. 2000 | Applied Materials, Inc. | Apparatus for filling apertures in a film layer on a semiconductor substrate |
| US6204197 | 12 juin 1998 | 20 mars 2001 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
| US6217721 | 5 avr. 1996 | 17 avr. 2001 | Applied Materials, Inc. | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer |
| US6238533 | 16 oct. 1997 | 29 mai 2001 | Applied Materials, Inc. | Integrated PVD system for aluminum hole filling using ionized metal adhesion layer |
| US6290806 | 24 mars 1997 | 18 sept. 2001 | Micron Technology, Inc. | Plasma reactor |
| US6313027 | 6 oct. 1997 | 6 nov. 2001 | Applied Materials, Inc. | Method for low thermal budget metal filling and planarization of contacts vias and trenches |
| US6413358 | 3 août 2001 | 2 juil. 2002 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
| US6500300 | 25 avr. 2002 | 31 déc. 2002 | Micron Technology, Inc. | Plasma reactor |
| US6784033 | 27 janv. 1995 | 31 août 2004 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
| US6946053 | 5 nov. 2002 | 20 sept. 2005 | Micron Technology, Inc. | Plasma reactor |
| US7074714 | 3 nov. 2004 | 11 juil. 2006 | Applied Materials, Inc. | Method of depositing a metal seed layer on semiconductor substrates |
| US7253109 | 28 févr. 2005 | 7 août 2007 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
| US7381639 | 9 juin 2006 | 3 juin 2008 | Applied Materials, Inc. | Method of depositing a metal seed layer on semiconductor substrates |
| US7687909 | 30 mai 2007 | 30 mars 2010 | Applied Materials, Inc. | Metal / metal nitride barrier layer for semiconductor device applications |
| US8029105 | 17 oct. 2007 | 4 oct. 2011 | Eastman Kodak Company | Ambient plasma treatment of printer components |
