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Brevets

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Brevet citant Date de dépôt Date de délivrance Cessionnaire d'origine Titre
US410005510 juin 197711 juil. 1978Varian Associates, Inc.Target profile for sputtering apparatus
US414295813 avr. 19786 mars 1979Litton Systems, Inc.Method for fabricating multi-layer optical films
US417394414 févr. 197813 nov. 1979Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbHSilverplated vapor deposition chamber
US417953012 janv. 197918 déc. 1979Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbHProcess for the deposition of pure semiconductor material
US419717526 mai 19788 avr. 1980Balzers AktiengesellschaftMethod and apparatus for evaporating materials in a vacuum coating plant
US469074413 juil. 19841 sept. 1987Konishiroku Photo Industry Co., Ltd.Method of ion beam generation and an apparatus based on such method
US488507020 mai 19885 déc. 1989Leybold AktiengesellschaftMethod and apparatus for the application of materials
US495229428 févr. 198928 août 1990Apparatus and method for in-situ generation of dangerous polyatomic gases, including polyatomic radicals
US505929227 août 199022 oct. 1991Single-chamber apparatus for in-situ generation of dangerous polyatomic gases and radicals from a source material contained within a porous foamed structure
US541575322 juil. 199316 mai 1995Materials Research CorporationStationary aperture plate for reactive sputter deposition
US54592961 nov. 199317 oct. 1995Sidmar N.V.Method for the low-maintenance operation of an apparatus for producing a surface structure, and apparatus
US560165431 mai 199611 févr. 1997The Regents of the University of California, Office of Technology TransferFlow-through ion beam source
US605111515 juil. 199718 avr. 2000Korea Institute of Science and TechnologyAdhesive strength increasing method for metal thin film
US613280520 oct. 199817 oct. 2000CVC Products, Inc.Shutter for thin-film processing equipment
USRE328492 juil. 198531 janv. 1989Litton Systems, Inc.Method for fabricating multi-layer optical films