US4709370A - Semiconductor laser driver circuit - Google Patents
Semiconductor laser driver circuit Download PDFInfo
- Publication number
- US4709370A US4709370A US06/744,956 US74495685A US4709370A US 4709370 A US4709370 A US 4709370A US 74495685 A US74495685 A US 74495685A US 4709370 A US4709370 A US 4709370A
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- United States
- Prior art keywords
- current
- laser diode
- level
- driver circuit
- diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
Definitions
- This invention relates generally to driver circuits and, more particularly, to a high-speed, high current driver for driving the anode of a semiconductor laser.
- CDH-LOC constricted double heterojunction large-optical-cavity AlGaAs laser.
- the devices may typically be separated by only 150 ⁇ m.
- a driver circuit for use with a diode laser at the high recording speeds contemplated must include means for providing a bias current through the laser.
- the present invention relates to a driver circuit for use with a CDH-LOC laser diode array which provides bias currents through the laser diodes and which provides the necessary drive currents to the anode (p side) of the diodes to modulate the lasers, while maintaining electrical isolation between the diodes and further maintaining a suitable thermal and mechanical enviroment.
- a driver circuit for a laser diode in which the laser diode has first and second terminals, the first terminal being coupled to a reference voltage.
- the laser diode has a threshold current level such that current flow through the laser diode exceeding the threshold current level causes lasing action of the laser diode.
- the driver circuit comprises a current switching device having input, output and control terminals, the switching device being coupled at its input terminal to the second terminal of the laser diode.
- the current switching device is responsive to a first voltage level at its control terminal for enabling a first level of current from the input terminal to the output terminal, and is responsive to a second voltage level at its control terminal for disabling current flow through the switching device.
- the driver circuit further comprises means for supplying a constant current to the juncture of the switching device and the laser diode, wherein the constant current level is greater than the threshold current level, and the threshold current level is greater than the difference between the constant current level and the first current level.
- FIG. 1 is a simplified schematic diagram of a driver circuit for driving the cathode (n side) of a laser diode, according to the prior art
- FIG. 2 is a simplified schematic diagram of a driver circuit for driving the anode (p side) of a laser diode, according to the prior art.
- FIG. 3 is a schematic diagram of a driver circuit for driving the anode (p side) of a laser diode, according to the present invention.
- FIG. 1 there is shown a simplified schematic diagram of a driver circuit for driving the cathode (n side) of a laser diode, according to the prior art.
- This prior art driver circuit includes NPN transistors 12 and 14 coupled at their emitters to constant current supply 16 to form differential switch 10.
- Laser diode 18 is coupled between the collector terminal of transistor 12 and ground such that transistor 12 drives the n side of laser diode 18.
- Constant current supply 20 draws a bias current I B through laser diode 18.
- Current I B is set just below the threshold current level for lasing action of diode 18.
- Schottky diode 22 shunts laser diode 18 in the reverse direction for protection against reverse switching transients.
- Laser diode 18 is pulsed on when the modulating signal and its inverse applied, respectively, at terminals 26 and 28 are pulsed, respectively, high and low. This causes current I P to switch from transistor 14 to transistor 12, making the total current flow through laser diode 18 I B +I P , which current is sufficient to produce lasing action in diode 18.
- the differential switch 10 NPN transistors 12 and 14 are of a type similar to HXTR-5104 transistors, sold by Hewlett-Packard Co., Palo Alto, Calif. These transistors are well-suited to high-speed, high-current switching applications required in the optical recording systems contemplated, as they are able to switch 200 milliamperes with rise/fall times of one nanosecond when used in this circuit configuration.
- the lasers of the CDH-LOC diode array are mounted with their p sides down on a BeO submount.
- the array diodes may be electrically isolated by the use of an ion-milling technique which removes a narrow band of p-side metallization between devices, thereby separating the diodes at their anodes. It is therefore necessary to drive the lasers at their p sides, while their n sides are common to all devices. Thus, the n-side driver circuit of FIG. 1 cannot be used for this type of laser diode.
- FIG. 2 there is shown a simplified schematic diagram of a driver circuit for driving the anode (p side) of a laser diode, according to the prior art. It will be seen that the FIG. 2 circuit is merely the circuit of FIG. 1 with the polarized elements (e.g., diodes, transistors, voltage sources, current supplies) reversed.
- polarized elements e.g., diodes, transistors, voltage sources, current supplies
- the driver circuit of FIG. 2 comprises PNP transistors 32 and 34 coupled at their emitters to constant current supply 36 to form differential switch 30.
- Laser diode 38 is coupled between the collector terminal of transistor 32 and ground such that transistor 32 drives the p side of laser diode 38, and its n side is common to all devices in the diode array.
- Constant current supply 40 provides a bias current I B through laser diode 38, when the collector-emitter junction of transistor 32 is an effective open circuit. Current I B is just below the threshold current level for lasing action of diode 38.
- Schottky diode 42 shunts laser diode 38 in the reverse direction for protection against reverse switching transients.
- FIG. 2 The operation of the driver circuit of FIG. 2 is virtually identical to that of the FIG. 1 circuit, except that I B and I p are reversed in direction. Nevertheless, the FIG. 2 prior art driver circuit is an unsatisfactory driver for CDH-LOC diode array lasers as there is no PNP transistor which is the high-speed equivalent of the NPN HXTR-5104 transistor of the FIG. 1 driver circuit. Although there are commercially available PNP transistors which are capable of switching at the high frequencies desired (over 100 MHz), there are none which can switch high current (200 mA) at the speed, with rise/fall times comparable to those of the HXTR-5104 transistor.
- the high current requirement can be met by using multiple paralleled PNP transistors in place of transistors 32 and 34, but problems associated with unequal current sharing in the individual paralleled transistors, as well as the attendant increase in board area, makes this an unacceptable solution.
- FIG. 3 there is shown a schematic diagram of a driver circuit for driving the anode (p side) of a laser diode, using a differential switch comprising NPN transistors, according to the present invention.
- NPN transistors 52 and 54 are coupled at their emitter terminals to constant current source 56 to form differential switch 50.
- Laser diode 58 is coupled between the collector terminal of transistor 52 and ground such that transistor 52 drives the p side of laser diode 58, and its cathode (n side) is common to all devices in the array.
- Constant current sources 66 and 68 supply current into the node where laser diode 58 is driven by transistor 52.
- Bias current source 66 provides a constant current I B , which is just below the threshold current level for lasing action of diode 58.
- Current source 68 provides a pulse current I P2 , which is substantially equal to the pulse current, I P1 , which is drawn from the common emitters of transistors 52 and 54 by constant current source 56.
- Schottky diode 60 shunts laser diode 58 in the reverse direction for protection against switching transients.
- Reverse-biased diode 64 having a typical voltage drop of 0.7 volts, is coupled between the collector of transisistor 52 and a voltage source of, for example, +2.1 volts to protect transistor 52 against a large V ce . It will be recognized by those skilled in the art that the +2.1 volt supply may be implemented as three diodes, each having a typical voltage drop of 0.7 volts, coupled in series to ground.
- a laser diode modulating signal which may typically be a double-ended digital signal from an emitter-coupled-logic (ECL) driver, is applied as the DATA IN signals at input terminals 70 and 72.
- the DATA IN signals have voltage swings between -0.8 and -1.6 volts, as they are pulled down, through resistors 78 and 80, respectively, to a negative voltage source, illustratively at -5.2 volts, and are coupled through resistors 82 and 84, respectively, to the base electrodes of PNP transistors 86 and 88.
- Transistors 86 and 88 are coupled at their emitters, and through resistor 90 to a voltage source, which, in the present example, is +5 volts.
- the combination of transistors 86 and 88 configured with resistors 90 comprises differential switch 92.
- Load resistors 94 and 96 are coupled, respectively between the collector terminals of transistors 86 and 88 and a negative voltage source, -7.5 volts in the present example, such that the voltage swing at the collectors of transistors 86 and 88, in response to the stated voltage swings at their bases, is -4.5 to -7.5 volts.
- a positive-going DATA IN signal pulse from -1.6 to -0.8 volt is applied to terminal 70 and a corresponding negative-going pulse from -0.8 to -1.6 volts is applied to terminal 72.
- differential switch 92 Those pulses are inverted, amplified and voltage shifted by differential switch 92 to thereby provide a negative pulse from -4.5 to -7.5 volts at the base of transistor 52 and a corresponding positive pulse from -7.5 to -4.5 volts at the base of transistor 54.
- transistors 52 and 54 are each fully turned off by a base voltage of -7.5 volts and are each fully turned on by a base voltage of -4.5 volts.
- Constant current sources 56, 66 and 68 are very similar in structure; only one will be described in detail.
- Constant current source 66 supplies laser diode bias current I B into the node connecting the collector of driver transistor 52 with the p side (anode) of laser diode 58.
- the current originates from a voltage source, +15 volts in the present example, which is coupled to voltage-dropping diode 100, through field-effect transistor (FET) 102, precision sampling resistor 104, and blocking diode 116.
- FET field-effect transistor
- Differential input amplifier 106 senses the bias current I B by measuring the voltage drop across resistor 104.
- the output signal of amplifier 106 is coupled via resistor 108 to one input of differential input amplifier 110 functioning as a comparator.
- Amplifier 110 compares the output voltage from amplifier 106 with a dc voltage level provided from variable resistor 112.
- the output signal of comparator 110 is coupled via resistor 114 to the gate electrode of FET 102 to thereby control the current flowing therethrough.
- Resistors 108 and 114 act in conjunction with the input capacitances of amplifier 110 and FET 102, respectively, to slow down the loop frequency response.
- Variable resistor 112 is manually set to permit the desired value of bias current through FET 102.
- Variable resistor 120 of current source 68 and variable resistor 130 of current source 56 are ganged in their wiper terminals so that they may be adjusted in tandem.
- Current sources 56, 66 and 68 may typically also include wideband chokes, to isolate the dc sources from effect of the modulating signal.
- the normal voltage level at input terminal 70 is -1.6 volts, corresponding to a low logic state
- the normal voltage level at input terminal 72 is -0.8 volts, corresponding to a high logic state.
- These input signal levels translate to a normal voltage level of -4.5 volts (high) at the base of transistor 52 and a normal voltage level of -7.5 volts (low) at the base of transistor 54.
- transistor 52 is fully conducting, drawing current I P1 , which is substantially equal to the current I P2 supplied by current source 68, and transistor 54 is fully off.
- laser diode 58 draws I B from current source 66, which biases the diode at a level below its lasing threshold.
- a driver circuit of the type shown in FIG. 3 and described herein has been built and its performance has been measured.
- the driver has switched a maximum pulse current of 200 milliamperes with pulse rise/fall times of one nanosecond, at a pulse frequency rate in excess of 75 MHz.
- current-adjusting variable resistors 120 and 130 are ganged so that they may be set jointly. If current sources 56 and 68 are not properly matched, current is either substracted from bias current source 66 (for the case where I P1 >I P2 ) or added to bias current source 66 (for the case where I P1 ⁇ I P2 ). In the present example, it is desired to maintain currents I P1 and I P2 within three milliamperes of each other.
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US06/744,956 US4709370A (en) | 1985-06-17 | 1985-06-17 | Semiconductor laser driver circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US06/744,956 US4709370A (en) | 1985-06-17 | 1985-06-17 | Semiconductor laser driver circuit |
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US4709370A true US4709370A (en) | 1987-11-24 |
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US06/744,956 Expired - Lifetime US4709370A (en) | 1985-06-17 | 1985-06-17 | Semiconductor laser driver circuit |
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Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4799224A (en) * | 1985-12-10 | 1989-01-17 | Gte Telecomunicazioni, S.P.A. | Driver for a semiconductor laser |
WO1989002137A1 (en) * | 1987-08-31 | 1989-03-09 | Dr.-Ing. Rudolf Hell Gmbh | Laser diode output power stabilization in a laser image setter |
US4835780A (en) * | 1986-12-08 | 1989-05-30 | Ricoh Company, Ltd. | Semiconductor laser output control circuit |
US4945542A (en) * | 1989-05-31 | 1990-07-31 | Massachusetts Institute Of Technology | Laser diode modulator |
US5023818A (en) * | 1989-09-21 | 1991-06-11 | Ncr Corporation | Laser scanner safety apparatus and method |
US5123023A (en) * | 1990-11-21 | 1992-06-16 | Polaroid Corporation | Laser driver with plural feedback loops |
US5199039A (en) * | 1989-09-22 | 1993-03-30 | Imatronic Limited | Laser diode supply circuit |
EP0597644A1 (en) * | 1992-11-12 | 1994-05-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser driving circuit |
US5444728A (en) * | 1993-12-23 | 1995-08-22 | Polaroid Corporation | Laser driver circuit |
EP0678982A2 (en) * | 1994-04-22 | 1995-10-25 | Canon Kabushiki Kaisha | Semiconductor light emitting element driving circuit |
EP0704948A1 (en) * | 1992-02-28 | 1996-04-03 | Canon Kabushiki Kaisha | Drive circuit for semiconductor light-emitting device |
US5764667A (en) * | 1996-12-09 | 1998-06-09 | Hewlett-Packard Company | Current steering circuit |
US5767704A (en) * | 1996-08-30 | 1998-06-16 | Larson; Francis Willard | High frequency analog switch for use with a laser diode |
WO1999001914A2 (en) * | 1997-07-03 | 1999-01-14 | Maxim Integrated Products, Inc. | High speed semiconductor laser driver circuits |
US6188498B1 (en) | 1998-07-15 | 2001-02-13 | Maxim Integrated Products, Inc. | Local control for burst mode optical transmitters |
US6285692B1 (en) * | 1998-08-05 | 2001-09-04 | Advantest Corporation | Method and apparatus for driving laser diode |
US6490301B1 (en) * | 1999-11-30 | 2002-12-03 | Matsushita Electric Industrial Co., Ltd. | Laser drive device |
US6532245B1 (en) | 1999-10-28 | 2003-03-11 | International Business Machines Corporation | Vertical cavity surface emitting laser (VCSEL) driver with low duty cycle distortion and digital modulation adjustment |
US6618406B1 (en) * | 1998-06-29 | 2003-09-09 | Kabushiki Kaisha Toshiba | Optical semiconductor diode driver circuit and optical tranceiver module |
US6624917B1 (en) | 1999-10-28 | 2003-09-23 | International Business Machines Corporation | Optical power adjustment circuits for parallel optical transmitters |
CN1127185C (en) * | 1999-05-21 | 2003-11-05 | 北京大学 | High bit rate driver for semiconductor laser device and electric acceptive modulator |
US6980575B1 (en) * | 2001-03-08 | 2005-12-27 | Cypress Semiconductor Corp. | Topology on VCSEL driver |
WO2006015723A1 (en) * | 2004-08-07 | 2006-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Low power loss quantum cascade laser |
US7054344B1 (en) * | 2003-11-17 | 2006-05-30 | Finisar Corporation | Method and system for equalizing transmission line loss of a laser drive signal |
US20060165142A1 (en) * | 2005-01-26 | 2006-07-27 | Robinson Michael A | Calibration of laser systems |
US20080031634A1 (en) * | 2006-08-04 | 2008-02-07 | Finisar Corporation | Linear amplifier for use with laser driver signal |
US20080031629A1 (en) * | 2006-08-04 | 2008-02-07 | Finisar Corporation | Optical transceiver module having an active linear optoelectronic device |
US20080088368A1 (en) * | 2006-10-17 | 2008-04-17 | Gajender Rohilla | Offset voltage correction for high gain amplifier |
US20080239472A1 (en) * | 2007-03-26 | 2008-10-02 | Fujitsu Limited | Semiconductor optical amplification module, optical matrix switching device, and drive circuit |
US20170063027A1 (en) * | 2015-08-28 | 2017-03-02 | Stmicroelectronics (Research & Development) Limited | Apparatus with device with fault detection protection |
US10234545B2 (en) | 2010-12-01 | 2019-03-19 | Microsoft Technology Licensing, Llc | Light source module |
US10257932B2 (en) | 2016-02-16 | 2019-04-09 | Microsoft Technology Licensing, Llc. | Laser diode chip on printed circuit board |
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US4009385A (en) * | 1976-03-22 | 1977-02-22 | Bell Telephone Laboratories, Incorporated | Laser control circuit |
US4366567A (en) * | 1979-11-14 | 1982-12-28 | Hitachi, Ltd. | Semiconductor laser device |
US4449212A (en) * | 1981-07-30 | 1984-05-15 | Rca Corporation | Multi-beam optical record and playback apparatus |
US4674093A (en) * | 1983-07-14 | 1987-06-16 | Telefunken Electronic Gmbh | Circuit arrangement for actuating semiconductor lasers |
-
1985
- 1985-06-17 US US06/744,956 patent/US4709370A/en not_active Expired - Lifetime
Patent Citations (4)
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US4009385A (en) * | 1976-03-22 | 1977-02-22 | Bell Telephone Laboratories, Incorporated | Laser control circuit |
US4366567A (en) * | 1979-11-14 | 1982-12-28 | Hitachi, Ltd. | Semiconductor laser device |
US4449212A (en) * | 1981-07-30 | 1984-05-15 | Rca Corporation | Multi-beam optical record and playback apparatus |
US4674093A (en) * | 1983-07-14 | 1987-06-16 | Telefunken Electronic Gmbh | Circuit arrangement for actuating semiconductor lasers |
Cited By (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4799224A (en) * | 1985-12-10 | 1989-01-17 | Gte Telecomunicazioni, S.P.A. | Driver for a semiconductor laser |
US4835780A (en) * | 1986-12-08 | 1989-05-30 | Ricoh Company, Ltd. | Semiconductor laser output control circuit |
WO1989002137A1 (en) * | 1987-08-31 | 1989-03-09 | Dr.-Ing. Rudolf Hell Gmbh | Laser diode output power stabilization in a laser image setter |
US4945542A (en) * | 1989-05-31 | 1990-07-31 | Massachusetts Institute Of Technology | Laser diode modulator |
US5023818A (en) * | 1989-09-21 | 1991-06-11 | Ncr Corporation | Laser scanner safety apparatus and method |
US5199039A (en) * | 1989-09-22 | 1993-03-30 | Imatronic Limited | Laser diode supply circuit |
US5123023A (en) * | 1990-11-21 | 1992-06-16 | Polaroid Corporation | Laser driver with plural feedback loops |
EP0704948A1 (en) * | 1992-02-28 | 1996-04-03 | Canon Kabushiki Kaisha | Drive circuit for semiconductor light-emitting device |
EP0597644A1 (en) * | 1992-11-12 | 1994-05-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser driving circuit |
US5444728A (en) * | 1993-12-23 | 1995-08-22 | Polaroid Corporation | Laser driver circuit |
EP0905900A1 (en) * | 1994-04-22 | 1999-03-31 | Canon Kabushiki Kaisha | Driving circuit for light emitting diode |
US5739717A (en) * | 1994-04-22 | 1998-04-14 | Canon Kabushiki Kaisha | Semiconductor light emitting element driving circuit |
EP0678982B1 (en) * | 1994-04-22 | 1999-03-31 | Canon Kabushiki Kaisha | Semiconductor light emitting element driving circuit |
EP0678982A2 (en) * | 1994-04-22 | 1995-10-25 | Canon Kabushiki Kaisha | Semiconductor light emitting element driving circuit |
US5767704A (en) * | 1996-08-30 | 1998-06-16 | Larson; Francis Willard | High frequency analog switch for use with a laser diode |
US5764667A (en) * | 1996-12-09 | 1998-06-09 | Hewlett-Packard Company | Current steering circuit |
WO1999001914A2 (en) * | 1997-07-03 | 1999-01-14 | Maxim Integrated Products, Inc. | High speed semiconductor laser driver circuits |
US5883910A (en) * | 1997-07-03 | 1999-03-16 | Maxim Integrated Products, Inc. | High speed semiconductor laser driver circuits |
WO1999001914A3 (en) * | 1997-07-03 | 1999-03-25 | Maxim Integrated Products | High speed semiconductor laser driver circuits |
US6618406B1 (en) * | 1998-06-29 | 2003-09-09 | Kabushiki Kaisha Toshiba | Optical semiconductor diode driver circuit and optical tranceiver module |
US6188498B1 (en) | 1998-07-15 | 2001-02-13 | Maxim Integrated Products, Inc. | Local control for burst mode optical transmitters |
US6285692B1 (en) * | 1998-08-05 | 2001-09-04 | Advantest Corporation | Method and apparatus for driving laser diode |
CN1127185C (en) * | 1999-05-21 | 2003-11-05 | 北京大学 | High bit rate driver for semiconductor laser device and electric acceptive modulator |
US6532245B1 (en) | 1999-10-28 | 2003-03-11 | International Business Machines Corporation | Vertical cavity surface emitting laser (VCSEL) driver with low duty cycle distortion and digital modulation adjustment |
US6624917B1 (en) | 1999-10-28 | 2003-09-23 | International Business Machines Corporation | Optical power adjustment circuits for parallel optical transmitters |
US6490301B1 (en) * | 1999-11-30 | 2002-12-03 | Matsushita Electric Industrial Co., Ltd. | Laser drive device |
US6717968B2 (en) | 1999-11-30 | 2004-04-06 | Matsushita Electric Industrial Co., Ltd. | Laser drive device |
US6980575B1 (en) * | 2001-03-08 | 2005-12-27 | Cypress Semiconductor Corp. | Topology on VCSEL driver |
US7054344B1 (en) * | 2003-11-17 | 2006-05-30 | Finisar Corporation | Method and system for equalizing transmission line loss of a laser drive signal |
WO2006015723A1 (en) * | 2004-08-07 | 2006-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Low power loss quantum cascade laser |
US7400662B2 (en) * | 2005-01-26 | 2008-07-15 | Avago Technologies Fiber Ip Pte Ltd | Calibration of laser systems |
US20060165142A1 (en) * | 2005-01-26 | 2006-07-27 | Robinson Michael A | Calibration of laser systems |
US7646988B2 (en) * | 2006-08-04 | 2010-01-12 | Finisar Corporation | Linear amplifier for use with laser driver signal |
US20080031629A1 (en) * | 2006-08-04 | 2008-02-07 | Finisar Corporation | Optical transceiver module having an active linear optoelectronic device |
US7734184B2 (en) | 2006-08-04 | 2010-06-08 | Finisar Corporation | Optical transceiver module having an active linear optoelectronic device |
US20080031634A1 (en) * | 2006-08-04 | 2008-02-07 | Finisar Corporation | Linear amplifier for use with laser driver signal |
US7659776B2 (en) | 2006-10-17 | 2010-02-09 | Cypress Semiconductor Corporation | Offset voltage correction for high gain amplifier |
US20080088368A1 (en) * | 2006-10-17 | 2008-04-17 | Gajender Rohilla | Offset voltage correction for high gain amplifier |
US20080239472A1 (en) * | 2007-03-26 | 2008-10-02 | Fujitsu Limited | Semiconductor optical amplification module, optical matrix switching device, and drive circuit |
US8274733B2 (en) * | 2007-03-26 | 2012-09-25 | Fujitsu Limited | Semiconductor optical amplification module, optical matrix switching device, and drive circuit |
US10234545B2 (en) | 2010-12-01 | 2019-03-19 | Microsoft Technology Licensing, Llc | Light source module |
US20170063027A1 (en) * | 2015-08-28 | 2017-03-02 | Stmicroelectronics (Research & Development) Limited | Apparatus with device with fault detection protection |
US9753060B2 (en) * | 2015-08-28 | 2017-09-05 | Stmicroelectronics (Research & Development) Limited | Apparatus with device with fault detection protection |
US10267828B2 (en) | 2015-08-28 | 2019-04-23 | Stmicroelectronics (Research & Development) Limited | Apparatus with device with fault detection protection |
US10746764B2 (en) | 2015-08-28 | 2020-08-18 | Stmicroelectronics (Research & Development) Limited | Apparatus with device with fault detection protection |
US10257932B2 (en) | 2016-02-16 | 2019-04-09 | Microsoft Technology Licensing, Llc. | Laser diode chip on printed circuit board |
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