US4959697A - Short channel junction field effect transistor - Google Patents
Short channel junction field effect transistor Download PDFInfo
- Publication number
- US4959697A US4959697A US07/481,803 US48180390A US4959697A US 4959697 A US4959697 A US 4959697A US 48180390 A US48180390 A US 48180390A US 4959697 A US4959697 A US 4959697A
- Authority
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- United States
- Prior art keywords
- gate
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 239000002019 doping agent Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 4
- 238000010348 incorporation Methods 0.000 abstract description 2
- 108091006146 Channels Proteins 0.000 description 46
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/481,803 US4959697A (en) | 1988-07-20 | 1990-02-20 | Short channel junction field effect transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22152488A | 1988-07-20 | 1988-07-20 | |
US07/481,803 US4959697A (en) | 1988-07-20 | 1990-02-20 | Short channel junction field effect transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US22152488A Continuation | 1988-07-20 | 1988-07-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
US4959697A true US4959697A (en) | 1990-09-25 |
Family
ID=26915863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/481,803 Expired - Lifetime US4959697A (en) | 1988-07-20 | 1990-02-20 | Short channel junction field effect transistor |
Country Status (1)
Country | Link |
---|---|
US (1) | US4959697A (en) |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6118148A (en) * | 1996-11-04 | 2000-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6127702A (en) * | 1996-09-18 | 2000-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an SOI structure and manufacturing method therefor |
US6198141B1 (en) | 1996-08-13 | 2001-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and method of manufacturing the same |
US6232642B1 (en) | 1997-06-26 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having impurity region locally at an end of channel formation region |
US6346446B1 (en) * | 1998-06-01 | 2002-02-12 | Massachusetts Institute Of Technology | Methods of forming features of integrated circuits using modified buried layers |
US20020158666A1 (en) * | 2001-04-27 | 2002-10-31 | Munehiro Azami | Semiconductor device |
US20020167026A1 (en) * | 2001-05-11 | 2002-11-14 | Munehiro Azami | Pulse output circuit, shift register and display device |
US20030011584A1 (en) * | 2001-07-16 | 2003-01-16 | Munehiro Azami | Light emitting device |
US20030034806A1 (en) * | 2001-08-03 | 2003-02-20 | Munehiro Azami | Semiconductor device and display device |
US20030052324A1 (en) * | 2001-08-09 | 2003-03-20 | Hajime Kimura | Semiconductor device |
US6590230B1 (en) | 1996-10-15 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20030141504A1 (en) * | 2001-11-16 | 2003-07-31 | Hideaki Kuwabara | Semiconductor device and manufacturing method thereof |
US6639246B2 (en) | 2001-07-27 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6653687B1 (en) | 1996-08-13 | 2003-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device |
US6686623B2 (en) | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
US6756816B2 (en) | 2001-11-30 | 2004-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6788108B2 (en) | 2001-07-30 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20040174189A1 (en) * | 2001-05-29 | 2004-09-09 | Semiconductor Energy Laboratory Co. Ltd., A Japan Corporation | Pulse output circuit, shift register, and display device |
US20040253781A1 (en) * | 2002-12-25 | 2004-12-16 | Hajime Kimura | Semiconductor device, and display device and electronic device utilizing the same |
US20050189572A1 (en) * | 1998-02-05 | 2005-09-01 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Semiconductor device and method of manufacturing the same |
US20050285157A1 (en) * | 2004-06-23 | 2005-12-29 | Hower Philip L | Distributed high voltage JFET |
US20070158681A1 (en) * | 2006-01-09 | 2007-07-12 | Kim Sung-Lyong | Power integrated circuit device having embedded high-side power switch |
US20100026619A1 (en) * | 2005-10-18 | 2010-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Shift register, semiconductor device, display device, and electronic device |
US20150097241A1 (en) * | 2013-10-07 | 2015-04-09 | Stmicroelectronics (Crolles 2) Sas | Method for relaxing the transverse mechanical stresses within the active region of a mos transistor, and corresponding integrated circuit |
US20150349124A1 (en) * | 2014-05-07 | 2015-12-03 | Cambridge Electronics, Inc. | Transistor structure having buried island regions |
US9331098B2 (en) | 2013-03-27 | 2016-05-03 | Qualcomm Switch Corp. | Semiconductor-on-insulator integrated circuit with reduced off-state capacitance |
US9466536B2 (en) | 2013-03-27 | 2016-10-11 | Qualcomm Incorporated | Semiconductor-on-insulator integrated circuit with back side gate |
US9478507B2 (en) | 2013-03-27 | 2016-10-25 | Qualcomm Incorporated | Integrated circuit assembly with faraday cage |
US20210210605A1 (en) * | 2018-12-18 | 2021-07-08 | United Microelectronics Corp. | Semiconductor device with reduced floating body effects and fabrication method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
US3372316A (en) * | 1963-07-26 | 1968-03-05 | Teszner Stanislas | Integral grid and multichannel field effect devices |
US3767982A (en) * | 1971-08-05 | 1973-10-23 | S Teszner | Ion implantation field-effect semiconductor devices |
US4176368A (en) * | 1978-10-10 | 1979-11-27 | National Semiconductor Corporation | Junction field effect transistor for use in integrated circuits |
US4412238A (en) * | 1980-05-27 | 1983-10-25 | National Semiconductor Corporation | Simplified BIFET structure |
US4549193A (en) * | 1980-09-26 | 1985-10-22 | University Of Toronto Innovations Foundation | Field effect transistor device utilizing critical buried channel connecting source and drain |
US4586239A (en) * | 1983-06-30 | 1986-05-06 | Thomson-Csf | Process of manufacturing a high-frequency vertical junction field-effect transistor |
-
1990
- 1990-02-20 US US07/481,803 patent/US4959697A/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
US3372316A (en) * | 1963-07-26 | 1968-03-05 | Teszner Stanislas | Integral grid and multichannel field effect devices |
US3767982A (en) * | 1971-08-05 | 1973-10-23 | S Teszner | Ion implantation field-effect semiconductor devices |
US4176368A (en) * | 1978-10-10 | 1979-11-27 | National Semiconductor Corporation | Junction field effect transistor for use in integrated circuits |
US4412238A (en) * | 1980-05-27 | 1983-10-25 | National Semiconductor Corporation | Simplified BIFET structure |
US4549193A (en) * | 1980-09-26 | 1985-10-22 | University Of Toronto Innovations Foundation | Field effect transistor device utilizing critical buried channel connecting source and drain |
US4586239A (en) * | 1983-06-30 | 1986-05-06 | Thomson-Csf | Process of manufacturing a high-frequency vertical junction field-effect transistor |
Cited By (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6198141B1 (en) | 1996-08-13 | 2001-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and method of manufacturing the same |
US6653687B1 (en) | 1996-08-13 | 2003-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device |
US6867085B2 (en) | 1996-08-13 | 2005-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and method of manufacturing the same |
US6127702A (en) * | 1996-09-18 | 2000-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an SOI structure and manufacturing method therefor |
US7339235B1 (en) * | 1996-09-18 | 2008-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having SOI structure and manufacturing method thereof |
US6590230B1 (en) | 1996-10-15 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6118148A (en) * | 1996-11-04 | 2000-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6232642B1 (en) | 1997-06-26 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having impurity region locally at an end of channel formation region |
US8222696B2 (en) | 1997-11-18 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having buried oxide film |
US8482069B2 (en) | 1997-11-18 | 2013-07-09 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
US6686623B2 (en) | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
US7535053B2 (en) | 1997-11-18 | 2009-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
US20040104424A1 (en) * | 1997-11-18 | 2004-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
US20050189572A1 (en) * | 1998-02-05 | 2005-09-01 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Semiconductor device and method of manufacturing the same |
US7671425B2 (en) | 1998-02-05 | 2010-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6346446B1 (en) * | 1998-06-01 | 2002-02-12 | Massachusetts Institute Of Technology | Methods of forming features of integrated circuits using modified buried layers |
US8659532B2 (en) | 2001-04-27 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6975142B2 (en) | 2001-04-27 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9136385B2 (en) | 2001-04-27 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20020158666A1 (en) * | 2001-04-27 | 2002-10-31 | Munehiro Azami | Semiconductor device |
US7586478B2 (en) | 2001-04-27 | 2009-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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