US5319247A - Semiconductor device having an interlayer insulating film of high crack resistance - Google Patents
Semiconductor device having an interlayer insulating film of high crack resistance Download PDFInfo
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- US5319247A US5319247A US07/781,342 US78134291A US5319247A US 5319247 A US5319247 A US 5319247A US 78134291 A US78134291 A US 78134291A US 5319247 A US5319247 A US 5319247A
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Definitions
- the present invention relates generally to a semiconductor device, and more specifically to a semiconductor device including an interlayer insulating film having higher crack resistance and insulation.
- the present invention further relates to a method of manufacturing such a device.
- LSI devices large scale integrated circuit devices
- mass production of 4M bit DRAMs has been practiced on a full scale.
- Miniaturizing LSI devices requires miniaturization of interconnection widths, interconnection spaces, etc., resulting in increase in steps formed on the surface of a substrate.
- the increase of steps formed on the surface of the substrate results in the following problems.
- a first interconnection pattern 52 is provided on a substrate 51.
- the first interconnection pattern 52 has a number of stepped portions 52a.
- An interlayer insulating film 53 is provided covering the first interconnection pattern 52.
- the surface of the interlayer insulating film 53 is unevenly shaped.
- Forming a second interconnection pattern 54 on the unevenly shaped surface of the interlayer insulating film 53 gives rise to formation of a narrow portion 54a to the second interconnection patter 54.
- the narrow portion 54a can result in disconnection.
- patterning does not proceed in an accurate manner in forming the second interconnection pattern 54, with the surface of the interlayer insulating film 53 being unevenly shaped. Consequently, the residue of material forming the interconnection pattern remains in areas other than intended, resulting in shorting.
- FIGS. 6A-6C are sectional views showing a conventional process of a planar technique for flattening interlayer insulating films (Semicon News June, 1989).
- a semiconductor substrate 1 has a stepped pattern 2.
- a silicon oxide film 3 (hereinafter plasma oxide film 3) is formed to cover the surface of the stepped pattern 2 by plasma chemical vapor deposition (hereinafter plasma CVD).
- the thickness of the plasma oxide film 3 is between about 0.1-0.3 ⁇ m.
- the plasma oxide film 3 is formed using silane (SiH 4 )/nitrous oxide (N 2 O) or tetra-ethyl-ortho-silicate (TEOS)/oxygen O 2 as a material gas.
- the plasma oxide film 3 is superior in insulation and crack resistance, but on the other hand is inferior in step coverage and filling of recesses.
- a silicon oxide film 4 (hereinafter atmospheric pressure TEOS oxide film 4) is deposited by atmospheric pressure CVD using TEOS/ozone (O 3 ), so as to cover the stepped pattern 2, filling up the recesses of the stepped pattern 2.
- the atmospheric pressure TEOS oxide film 4 has a thickness in the range of approximately 0.6-0.8 ⁇ m in the step 2a of the stepped pattern 2.
- the plasma oxide film 3 plus the atmospheric pressure TEOS oxide film 4 equals approximately 0.9 ⁇ m in film thickness.
- a spin on glass film 5 (hereinafter SOG film 5) is applied onto the atmospheric pressure TEOS oxide film 4 so as to fill up recess 4a existing on the surface of the atmospheric pressure TEOS oxide film 4 and to cover the atmospheric TEOS oxide film 4, and annealing is performed thereon. Thereafter, the SOG film 5 is etched in such a manner that the SOG film 5 remains only in the recess 4a of the atmospheric pressure TEOS oxide film 4. A three-layer structured interlayer insulating film 24 is thus formed on the semiconductor substrate 1.
- the manufacturing process of a conventional interlayer insulating film is composed as described above.
- the plasma oxide film 3 formed by the above-mentioned method is superior in insulation and crack resistance compared to the atmospheric TEOS oxide film 4.
- the plasma oxide film 3 does not easily change its film characteristics by heat-treatment. Even with the difference in shrinkage factors between the stepped pattern 2 (an aluminum interconnection which is an underlying step) and the atmospheric pressure TEOS oxide film 4, cracks in the atmospheric pressure TEOS oxide film 4 due to the difference can be prevented by using the plasma oxide film 3 as the underlying film of the atmospheric pressure TEOS oxide film 4.
- the atmospheric pressure TEOS oxide film 4 is superior in step coverage and filling of recesses.
- the atmospheric pressure TEOS oxide film 4 fills up very small trenches completely which may produce voids if the plasma oxide film 3 is used.
- Neither the plasma oxide film 3 nor the atmospheric pressure TEOS oxide film 4 is independently suitable as an interlayer insulating film.
- the combination of these two kinds of films permits the advantages of these films to be united, thereby forming a superior interlayer insulating film.
- the interlayer insulating film is not flat enough at a wide trench 2a, and, therefore, the SOG film 5 fills the recess 4a of the atmospheric pressure TEOS oxide film 4.
- the flatness of the surface of the interlayer insulating film is improved by filling the recesses 4a with the SOG film 5.
- Al enters the crack 60 at the time of sputtering for forming a second Al interconnection 25.
- the second Al interconnection 25 is formed with a part disconnected as shown in FIG. 8. The residue left behind at the time of etching the second A; interconnection 25 remains along the crack 60, causing shorting.
- Another object of the present invention is to provide a semiconductor device including an interlayer insulating film having higher crack resistance and insulation.
- Yet another object of the present invention is to provide a semiconductor device in which the crack resistance and insulation of an interlayer insulating film are not deteriorated due to heat treatment.
- Still another object of the present invention is to provide a method of manufacturing a semiconductor device including an interlayer insulating film having higher crack resistance and insulation.
- a semiconductor device in accordance with the present invention includes a semiconductor substrate, and a stepped pattern formed on the semiconductor substrate.
- a first silicon oxide film superior in crack resistance is formed on the semiconductor substrate so as to cover the surface of the stepped pattern.
- a second silicon oxide film superior in step coverage is deposited on the first silicon oxide film so as to fill up the recesses existing on the surface of the first silicon oxide film, covering the stepped pattern.
- a third silicon oxide film superior in filling of recesses fills the recesses existing on the surface of the second silicon oxide film in order to flatten the surface of the second silicon oxide film.
- a fourth silicon oxide film is formed on the semiconductor substrate including the above-mentioned second and third silicon oxide films.
- the first silicon oxide film is formed by plasma CVD.
- the second silicon oxide film is formed by atmospheric pressure CVD, using an organic silicon and ozone and an alkoxyl group.
- the third silicon oxide film is formed by applying a spin on glass film thereon.
- a stepped pattern is formed on a semiconductor substrate.
- a first silicon oxide film having superior crack resistance is formed on the semiconductor substrate so as to cover the surface of the stepped pattern.
- a second silicon oxide film having superior step coverage is deposited over the first silicon oxide film so as to fill up the recesses of the stepped pattern, covering the stepped pattern.
- the second silicon oxide film is then etched to attain a prescribed film thickness.
- a third silicon oxide film superior in filling of recesses fills the recesses on the surface of the etched second silicon oxide film.
- a fourth silicon oxide film is formed on the semiconductor substrate including the second silicon oxide film and the third silicon oxide film.
- the formation of the first silicon oxide film is performed by plasma CVD.
- the formation of the second silicon oxide film is performed by atmospheric pressure CVD, using organic silicon and ozone and an alkoxyl group.
- the third silicon oxide film is formed by applying a spin on glass film onto the semiconductor substrate.
- an interlayer insulating film includes a first silicon oxide film having superior crack resistance provided so as to cover the surface of a stepped pattern, and a second silicon oxide film having superior step coverage provided on the first silicon oxide film. Further, a third silicon oxide film superior in filling of recesses fills recesses existing on the surface of the second silicon oxide film. A fourth silicon oxide film is provided so as to cover the second silicon oxide film and the third silicon oxide film.
- a first silicon oxide film having superior crack resistance covers the surface of a stepped pattern. Then, a second silicon oxide film having superior step coverage is deposited over the first silicon oxide film so as to fill up the recesses of the stepped pattern as well as to cover the stepped pattern.
- the second silicon oxide film is etched to attain a prescribed thickness.
- the second silicon oxide film is on one hand advantageous with superior step coverage, but on the other hand disadvantageous with inferior crack resistance.
- the above-described etching treatment allows the thickness of the second silicon oxide film to be thin, so that the disadvantage can be suppressed as much as possible.
- a third silicon oxide film having superior in filling of recesses fills the recesses existing on the surface of second silicon oxide film.
- the surface of the obtained layered films is thus flattened.
- a fourth silicon oxide film is then formed on the surface of the flattened layered films.
- the interlayer insulating film has its surface flattened and is superior in crack resistance.
- FIG. 1 is a sectional view showing a semiconductor device in accordance with one embodiment of the present invention
- FIGS. 2A-2F are sectional views showing a manufacturing process of the semiconductor device shown in FIG. 1;
- FIG. 3 is a view schematically showing how a silicon oxide film is formed by atmospheric pressure CVD using TEOS/O 3 ;
- FIG. 4A is a representation showing the chemical structure of a TEOS oxide film formed by low pressure CVD
- FIG. 4B is a representation showing the chemical structure of a TEOS oxide film formed by atmospheric CVD
- FIG. 5 is a graphic representation showing a comparison in current leakage between an atmospheric CVD.TEOS film and a low pressure CVD.TEOS oxide film;
- FIGS. 6A-6C are sectional views showing a conventional process of manufacturing an interlayer insulating film
- FIG. 7 is a view for illustrating problems associated with forming a second interconnection pattern on a conventional interlayer insulating film with a surface not flattened.
- FIG. 8 is a view for illustrating problems associated with forming a second Al interconnection on a conventional interlayer insulating film with a surface flattened with SOG film.
- FIG. 1 is a sectional view showing a semiconductor device in accordance with the present invention.
- a transistor 20 is formed on a semiconductor substrate 11 (a silicon semiconductor substrate).
- An insulating film 12 is provided so as to cover the transistor 20. Placed in the insulating film 12 is a bit line 21.
- a contact hole 12a for exposing the junction 22 of the semiconductor substrate 11 is formed in the insulating film 12.
- a stepped pattern 13, formed of a first Al interconnection is formed on the interlayer insulating film 12. The stepped pattern 13 is partially buried inside the contact hole 12a, so as to be connected to the junction 22 of the semiconductor substrate 11.
- the first Al interconnection is for connecting the bit lines.
- a first silicon oxide film 15 (hereinafter a plasma oxide film 15) having superior crack resistance is formed on the semiconductor substrate 11 so as to cover the surface of the stepped pattern 13.
- the plasma oxide film 15 is formed by plasma CVD, using SiH 4 /N 2 O or TEOS/O 2 as a material gas, which will be described later on.
- the thickness of the plasma oxide film 15 is about in the range of 0.1-0.2 ⁇ m.
- a silicon oxide film formed by plasma CVD has few SiOH bonds, and has superior insulation as well as crack resistance.
- a second silicon oxide film 16 (hereinafter referred to as an atmospheric pressure TEOS oxide film 16) having superior step coverage is provided on the plasma oxide film 15 so as to fill up recesses 15a existing on the surface thereof and to cover the stepped pattern 13.
- the atmospheric pressure TEOS oxide film 16 is formed by atmospheric CVD, using TEOS and ozone.
- the thickness (t 2 ) of the atmospheric pressure TEOS oxide film 16 is less than 0.5 ⁇ m and preferably not more than 0.2 ⁇ m in the recesses of the stepped pattern 13.
- a silicon oxide film formed by atmospheric pressure CVD includes more SiOH bonds than the plasma oxide film 15, and, as will be described later, is superior in step coverage as well as filling of recesses.
- the silicon oxide film is however, disadvantageous because of its inferiority in insulation and crack resistance. But if the film thickness t 2 is less than 0.5 ⁇ m and preferably not more than 0.2 ⁇ m, the inferiority in crack resistance is overcome.
- a third silicon oxide film 17 superior in filling of recesses is provided in concaves 16a existing on the surface of the atmospheric pressure TEOS oxide film 16, in order to flatten the surface of the atmospheric pressure TEOS oxide film 16.
- the SOG film 17 has more SiOH bonds than the atmospheric pressure TEOS oxide film 16 and is superior in filling of recesses.
- a fourth silicon oxide film i.e. a plasma oxide film 18 is formed so as to cover the surface of the SOG film 17 and the atmospheric pressure TEOS oxide film 16.
- the fourth silicon oxide film is preferably formed by plasma CVD, but may be formed by atmospheric pressure CVD using a TEOS/O 3 gas.
- An interlayer insulating film 24 comprising a layered structure having layered silicon oxide films 15, 16, 17, 18 having different characteristics results, whereby the advantages of the respective silicon oxide films join together. As a result, the surface of the interlayer insulating film 24 is flattened, and the resultant interlayer insulating film 24 attains superior crack resistance and insulation.
- a second Al interconnection 25 is formed on the interlayer insulating film 24.
- the second Al interconnection 25 is connected to the stepped and convex pattern 13 which is the first Al interconnection.
- FIGS. 2A-2F are sectional views showing a process of manufacturing the semiconductor device in FIG. 1.
- an insulating film 12 is formed on a semiconductor substrate 11 on which elements (not shown) are formed.
- the insulating film 12 is provided with a contact hole 12a for exposing a junction 22 on the semiconductor substrate 11.
- Sputtering is made entirely over the surface of the semiconductor substrate 11 and an aluminum film is deposited thereon.
- the aluminum film is patterned into a prescribed form, and then the step of the aluminum interconnection, the stepped pattern 13 is formed.
- a plasma oxide film 15 is formed so as to cover the surface of the stepped pattern 13.
- the plasma oxide film 15 is deposited using a SiH 4 /N 2 O gas or a TEOS/ 2 gas as a material gas at a temperature about in the range of 300-400° C., under a pressure about in the range of 0.1-10 Torr, until the film grows as thick as 0.1-0.2 ⁇ m.
- an atmospheric pressure TEOS oxide film 16 is formed entirely over the surface of the semiconductor substrate 11 by CVD, using TEOS and ozone at a temperature in the range of 350-450° C., under an atmospheric pressure (more than 760 Torr) or a quasi atmospheric pressure (700-760 Torr).
- the ratio of O 3 /TEOS is preferably more than 6.
- the atmospheric pressure TEOS oxide film 16 is deposited in the concave of the stepped pattern 13 until the film thickness (t 3 ) grows as thick as 1.0-1.5 ⁇ m.
- FIG. 3 is a view schematically showing how an atmospheric pressure TEOS oxide film is formed by atmospheric pressure CVD using TEOS/O 3 .
- the ozone is first decomposed by heat and generates oxygen radicals.
- the polymerization reaction of the oxygen radicals and TEOS takes place in a vapor phase.
- An intermediate produced by the polymerization reaction is considered to be a low molecular weight TEOS polymer formed of coupled n pieces of TEOS.
- the TEOS polymers and oxygen radicals produced in the vapor phase are transported to the surface of the semiconductor substrate having the stepped pattern 13, and a further polymerization reaction takes place on the surface, resulting in a film.
- the TEOS polymers possesses characteristics similar to liquid, and gather at the recessed portion as the flow of water. The surface thereof attains a smooth form. This is the reason why the atmospheric pressure TEOS oxide film is superior in step coverage and filling of recesses.
- the atmospheric TEOS oxide film 16 is etched back until its film thickness (t 2 ) at the stepped portion of the stepped pattern 13 is less than 0.5 ⁇ m.
- an SOG film 17 is applied onto the atmospheric pressure TEOS oxide film 16 so as to fill in the recessed portion 16a existing on the surface of the etched atmospheric pressure TEOS oxide film 16, and annealing is formed thereon.
- the SOG film 17 is etched so that the SOG film 17 is left only in the recessed portion 16a.
- a plasma oxide film 18 is formed on the semiconductor substrate 11 including the atmospheric pressure TEOS oxide film 16 and the SOG film 17.
- the formation of the plasma oxide film 18 is performed under conditions identical to the conditions under which the plasma oxide film 15 is formed in FIG. 2A.
- the plasma oxide film 18 is deposited so that the total film thickness of the interlayer insulating film 24 becomes approximately 0.9 ⁇ m.
- the semiconductor device shown in FIG. 1 is obtained by forming a second Al interconnection on the interlayer insulating film 24.
- forming the plasma oxide film 15 to cover the surface of the stepped pattern allows the expansion of the aluminum interconnection which is the stepped pattern 13 to be suppressed. Cracks in the atmospheric pressure TEOS oxide film 16 can be thus prevented.
- the atmospheric pressure TEOS oxide film 16 can be deposited thicker than conventional ones i.e. to a thickness between 1.0-1.5 ⁇ m (conventionally about 0.6-0.8 ⁇ m), because the atmospheric pressure TEOS oxide film 16 is etched back later. The surface of the atmospheric pressure TEOS oxide film 16 is therefore further flattened as compared to the conventional ones.
- the film thickness of the atmospheric pressure TEOS oxide film 16 is less than 0.5 ⁇ m, so that no crack will be produced on the atmospheric pressure TEOS oxide film 16.
- the insulation and crack resistance of the interlayer insulating film are tremendously improved compared to the conventional ones.
- the film thickness of the atmospheric pressure TEOS oxide film can be formed to be thicker than conventional, so that the interlayer insulating film is further flattened.
- TEOS tetra-methyl-ortho-silicate
- TPOS tetra-propyl-ortho-silicate
- HMDS hexa-methyl-di-siloxane
- OCTS octa-methyl-cyclo-tetra-siloxane
- the organic silicon is independently used, the present invention is not limited thereto and trimethyl-borate (TMB), triethyl-borate (TEB), tri-n-propyl-borate (TnPB), trimethyl-phosphate (TMPO), and trimethyl-phosphite (TMP) may be added.
- TMB trimethyl-borate
- TEB triethyl-borate
- TnPB tri-n-propyl-borate
- TMPO trimethyl-phosphate
- TMP trimethyl-phosphite
- the plasma oxide film is formed as the fourth silicon oxide film, but the invention is by no means limited, and an atmospheric pressure TEOS oxide film or a phosphorous glass film formed by atmospheric pressure CVD or low pressure CVD using SiH 4 PH 3 /O 2 , etc. as a material gas may be used.
- the second silicon film is an atmospheric pressure TEOS oxide film formed by atmospheric pressure CVD, but the second silicon oxide film may be formed by low pressure CVD.
- the TEOS oxide film produced by atmospheric pressure CVD is, however, superior in various points as compared to the one produced by low pressure CVD. In the following, a result of comparison between both films will be described.
- FIG. 4A represents the chemical structure of a TEOS oxide film produced by low pressure (100 Torr) CVD
- FIG. 4B represents the chemical structure of a TEOS oxide film produced by atmospheric pressure CVD.
- the atmospheric pressure TEOS oxide film has therefore a molecular volume larger than that of the low pressure TEOS oxide film.
- a polymer produced by atmospheric pressure CVD bears a closer resemblance to liquid than a polymer produced by low pressure CVD does. Consequently, referring to FIG. 3, a film formed by atmospheric CVD provides superior step coverage compared to the one formed by low pressure CVD.
- TEOS oxide film is superior to the low pressure CVD.TEOS oxide film in crack resistance. A TEOS oxide film having more than 1.5 ⁇ m film thickness was not obtained by low pressure CVD after all.
- FIG. 5 is a graphic representation showing the result of current leakage observed on each of the films.
- a curve (1) represents the case of the atmospheric pressure CVD.TEOS oxide film
- a curve (2) represents the low pressure CVD.TEOS oxide film.
- the atmospheric CVD.TEOS oxide film indicated lower leakage current than the low pressure CVD.TEOS oxide film.
- an interlayer insulating film is of a multilayered structure formed of multilayers of silicon oxide films having different characteristics (in flatness and crack resistance), and, therefore, advantages brought about by the respective silicon oxide film are combined.
- the surface of the interlayer insulating film is flattened, and the film is superior in crack resistance.
- an interlayer insulating film superior in crack resistance and having a flat surface is produced, and, therefore, a semiconductor device having high reliability can be produced.
Abstract
Description
TABLE 1 ______________________________________ film thickness (μm) 0.1 0.3 0.5 0.8 1.0 1.2 1.5 2.0 ______________________________________ low pressure ∘ ∘ ∘ x x x -- -- CVD.TEOS oxide film atmospheric ∘ ∘ ∘ ∘ ∘ ∘ ∘ x pressure CVD.TEOS oxide film ______________________________________ ∘ . . . no crack x . . . cracks formed
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US08/223,192 US5459105A (en) | 1990-10-30 | 1994-04-05 | Method of manufacturing a semiconductor device having multilayer insulating films |
US08/538,324 US5721156A (en) | 1990-10-30 | 1995-10-03 | Method of manufacturing a semiconductor device with a planarized integrated circuit |
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JP2294423A JP2640174B2 (en) | 1990-10-30 | 1990-10-30 | Semiconductor device and manufacturing method thereof |
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US07/781,342 Expired - Lifetime US5319247A (en) | 1990-10-30 | 1991-10-25 | Semiconductor device having an interlayer insulating film of high crack resistance |
US08/223,192 Expired - Lifetime US5459105A (en) | 1990-10-30 | 1994-04-05 | Method of manufacturing a semiconductor device having multilayer insulating films |
US08/538,324 Expired - Fee Related US5721156A (en) | 1990-10-30 | 1995-10-03 | Method of manufacturing a semiconductor device with a planarized integrated circuit |
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US08/538,324 Expired - Fee Related US5721156A (en) | 1990-10-30 | 1995-10-03 | Method of manufacturing a semiconductor device with a planarized integrated circuit |
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JP2640174B2 (en) | 1997-08-13 |
JPH04167429A (en) | 1992-06-15 |
US5459105A (en) | 1995-10-17 |
US5721156A (en) | 1998-02-24 |
KR920008851A (en) | 1992-05-28 |
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