US5398160A - Compact power module with a heat spreader - Google Patents

Compact power module with a heat spreader Download PDF

Info

Publication number
US5398160A
US5398160A US08/136,881 US13688193A US5398160A US 5398160 A US5398160 A US 5398160A US 13688193 A US13688193 A US 13688193A US 5398160 A US5398160 A US 5398160A
Authority
US
United States
Prior art keywords
power device
heat spreader
device chip
control substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/136,881
Inventor
Osamu Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu General Ltd
Original Assignee
Fujitsu General Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7306792U external-priority patent/JP2555796Y2/en
Priority claimed from JP073068U external-priority patent/JPH0638248U/en
Priority claimed from JP7306992U external-priority patent/JPH0638246U/en
Application filed by Fujitsu General Ltd filed Critical Fujitsu General Ltd
Assigned to FUJITSU GENERAL LIMITED reassignment FUJITSU GENERAL LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UMEDA, OSAMU
Application granted granted Critical
Publication of US5398160A publication Critical patent/US5398160A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Definitions

  • the present invention generally relates to power modules and particularly relates to a power module in which at least one power device chip and circuits for driving and controlling the power device chip are incorporated within one and the same package.
  • a power module which is small in size and excellent in workability, and in which at least one power device chip, for example, a power transistor chip, an MOS device chip, a diode chip, a thyristor chip, or the like, and circuits for driving and controlling the power device chip are incorporated within one and the same package has been used widely as an invertor power source circuit for composing a three-phase alternating current wave, or a power source circuit for controlling peripheral equipments.
  • a power device chip for example, a power transistor chip, an MOS device chip, a diode chip, a thyristor chip, or the like
  • circuits for driving and controlling the power device chip are incorporated within one and the same package has been used widely as an invertor power source circuit for composing a three-phase alternating current wave, or a power source circuit for controlling peripheral equipments.
  • the power device chip Since the power device chip generates heat, therefore, there is a case where the heat causes the circuit elements of the built-in circuits for driving and controlling the power device chip to make erroneous operation or to get in failure.
  • the circuits for driving and controlling the power device chip In order to protect the circuits for driving and controlling the power device chip from the heat of the power device chip, therefore, the circuits for driving and controlling the power device chip must be separated at a certain extent from the power device chip, and there is a limit in miniaturization of the power module.
  • a power module 11 has a two-layer structure of a base substrate 13 and a control substrate 14.
  • the base substrate 13 is constituted by an aluminum substrate or a DBC (direct bonding copper) substrate for supporting power device chips, for example, power transistor chips 12.
  • the control substrate 14 is disposed at a distance above the base substrate 13 and constituted by a printed circuit substrate having printed patterns of circuits for driving and controlling the power transistor chips.
  • An output terminal 15 of the power module is connected to the upper surface of the base substrate 13, and patterns are provided on the base substrate 13 for connection with input/output terminals of the power device chips 12 and the control circuit substrate 14.
  • the control circuit substrate 14 is supported, at a distance above the base substrate 13, by connection terminals 16 which act also as support legs.
  • the input/output terminals of the control circuit substrate 14 are connected to the base substrate 13 through the connection terminals 16.
  • Circuit elements 17 of the circuits for driving and controlling the power transistor chips 12 are mounted on the control circuit substrate 14, and a control terminal 18 is also connected to the control circuit substrate 14.
  • the base substrate 13 and the control circuit substrate 14 are covered with a case cover 19 of synthetic resin.
  • the base substrate 13 is exposed at its lower surface. Alternatively, a heat sink plate may be attached onto the lower surface of the base substrate 13 if necessary.
  • Each transistor chip 12 employs a bare chip in which a base electrode 20 and an emitter electrode 21 are formed on its upper surface, while its lower surface is formed as a collector terminal 22 as a whole, as shown in FIG. 5.
  • the lower surface, that is, the collector terminal 22, of this transistor chip 12 is fixed, through solder 24, onto the upper surface of a heat spreader 23 of metal such as copper having a high heat conductivity, and the lower surface of the heat spreader 23 is fixed onto the base substrate 13 through solder 25.
  • the base and emitter electrodes 20 and 21 of the transistor chip 12 are connected to predetermined patterns 26 and 27 on the upper surface of the base substrate 13 by the wire bonding with aluminum wire 28.
  • the collector terminal 22 is connected to a predetermined pattern (not shown) on the base substrate 13 through the solder 24 and wire bonding (not shown).
  • the transistor chip 12 fixed on the base substrate 13 is coated with a sealing agent 29 of synthetic resin, as shown in FIG. 4.
  • the power module can be reduced in its area, but it increases its height. Further, there is a defect that it is necessary to provide means for supporting the control circuit substrate 14 above the base substrate 13 and means for electrically connecting the base and control circuit substrates to each other. The structure is therefore made complicated, and the number of assembling steps increases. Further, the base substrate 13 is constituted by an aluminum substrate or a DBC substrate from the point of view of requiring high heat dissipation and insulation, resulting in increased material cost.
  • the power module in which at least one power device chip, circuits for driving and controlling the chip, and so on are incorporated within one and the same package comprises: a heat spreader which is constituted by a material having a heat dissipation property and which supports the power device chip on an upper surface thereof; a control substrate which has printed patterns formed on an upper surface thereof for forming the circuits for driving and controlling the chips, and a printed connection pattern formed on the upper surface thereof for connection with the power device chip, and which has an opening for inserting the heat spreader thereinto; and a base substrate which is constituted by a metal plate having a heat dissipation property and which fixedly supports the control substrate and fixedly supports the heat spreader inserted in the opening.
  • the power device chip and the control substrate are supported substantially in one and the same plane so that it is possible to reduce the height to half in comparison with a conventional two-layer system.
  • the heat spreader since the heat spreader is fixed on the base substrate, the heat of the power device chip on the heat spreader is transmitted through the heat spreader to the base substrate so as to be dissipated from the base substrate, so that there is no fear that the heat is given to the circuit elements on the control substrate. It is therefore possible to dispose the circuit elements on the control substrate close to the power device chip to thereby make it possible to reduce the area of the control substrate, so that the power module can be reduced in size on a large scale in comparison with conventional ones.
  • the power device chip and the connection pattern of the control substrate are connected by wire bonding to make it possible to absorb the difference in thermal expansion coefficient between the heat spreader and the control substrate so that it is possible to improve the reliability against thermal stress.
  • a part of the terminals of the power device chip may be soldered to the connection pattern of the control substrate so that the heat spreader and the control substrate can be firmly fixed to each other through solder to thereby make it possible to surely hold the heat spreader and the control substrate even if there occurs contraction due to the difference in thermal expansion coefficient between the heat spreader and the control substrate.
  • FIG. 1 is a vertical sectional view illustrating a main portion of a first embodiment of the power module according to the present invention
  • FIG. 2 is an enlarged vertical sectional view illustrating a power device chip portion in the first embodiment viewed in the direction different from FIG. 1;
  • FIG. 3 is an enlarged vertical sectional view illustrating a module according to the present invention. power device chip portion in a second embodiment of the power
  • FIG. 4 is a vertical sectional view illustrating a main portion of an example of the conventional power module.
  • FIG. 5 is an enlarged vertical sectional view illustrating a power device chip portion in the example of FIG. 4.
  • a power module 31 is sealed by a base substrate 34 and a case cover 35 provided so as to cover the upper surface of the base substrate 34 with a predetermined space therebetween.
  • the base substrate 34 supports thereon a sheet of control substrate 33 which is a printed circuit substrate on which patterns to be connected to the terminals of power device chips 32 and patterns of circuits for driving and controlling the chips are printed.
  • Circuit elements 36 of the driving and controlling circuits are mounted on the control substrate 33 in the same manner as in the above-mentioned conventional example, and control and output terminals 37 and 38 of the power module 31 are connected to the control substrate 33.
  • the base substrate 34 is constituted by a material such as an aluminum plate or the like having a property of good heat dissipation.
  • a heat sink plate may be attached onto the back surface of the base substrate 34 in order to make the effect of heat dissipation higher.
  • an opening 41 for inserting therein a heat spreader 39 for supporting each power device chip 32 on its upper surface is formed in the control substrate 33.
  • the heat spreader 39 is made of material, such as aluminum nitride, alumina, or the like, which is superior in heat dissipation and insulation, and the lower surface of the heat spreader 39 is attached to the base substrate 34 through a bonding agent 42.
  • the heat spreader 39 is provided at its upper surface with a metal portion 43 treated with DBC. This metal portion 43 is disposed so that its lower, copper portion is made to contact with the heat spreader 39 and its upper, nickel-plated portion is fixed to a collector terminal 44 of the power device chip 32 through solder 45.
  • Each power device chip 32 has a base electrode 46 and an emitter electrode (not-shown) on its upper surface, and the lower surface as a whole acts as the collector terminal 44.
  • the solder 45 is connected to a pattern 47 on the control substrate 33 so that collector terminal 44 is connected to the pattern 47 through the solder 45 and the aluminum wire 48.
  • the base electrode 46 is connected to a pattern 49 on the control substrate 33.
  • the upper surfaces of the patterns 47 and 49 are plated with nickel and the nickel plating is further flash-plated with gold to make the bonding with the aluminum wire 49 sure and firm.
  • Each power device chip 32 is covered with a sealing material 50 composed of epoxy resin, silica powder as a filler, a coloring agent such as carbon black as an additive, a fire retarding material such as an oxalic acid, etc., in order to protect the power device chip physically, chemically and electrically.
  • a sealing material 50 composed of epoxy resin, silica powder as a filler, a coloring agent such as carbon black as an additive, a fire retarding material such as an oxalic acid, etc.
  • the opening 41 for insertion of the heat spreader 39 is formed in the control substrate 33 so that the heat spreader 39 is inserted into the opening 41 so as to be mounted on the base substrate 34. Accordingly, the power module 31 has a substantially single layer structure so that it is possible to reduce its height to half in comparison with a conventional two-layer system.
  • the side edge of the heat spreader 39 is disposed at a distance from the side surface of the opening 41, the heat of the power device chip 32 on the heat spreader 39 is not directly transmitted to the control substrate 33 through the heat spreader 39, and since the lower surface of the heat spreader 39 is fixed on the base substrate 34, the heat transmitted to the heat spreader 39 is further transmitted from the heat spreader 39 to the base substrate 34 and dissipated from the base substrate 34. Accordingly, the heat is less transmitted from the heat spreader 39 to the circuit elements on the control substrate 33, so that it is possible to dispose these circuit elements close to the power device chip 32, and it is therefore possible to reduce the area of the control substrate 33. Accordingly, it is possible to reduce the power module 31 in size in comparison with conventional ones. Further, since the power device chip 32 and the control substrate 33 are connected to each other through the aluminum wire 48, it is possible to absorb the difference in the thermal expansion coefficients between the heat spreader 39 and the control substrate 33 to thereby make it possible to improve the reliability against thermal stress.
  • this power module 31 The assembling work of this power module 31 will be described. First, the power device chip 32 is fixed at its collector terminal 44 side to the metal portion 43 of the heat spreader 39 through the solder 45. Next, the circuit elements 36 of the circuits for driving and controlling the chip are mounted on the control substrate 33, and the control substrate 33 is fixed to the base substrate 34 through the bonding agent 42. The heat spreader 39 is applied with the bonding agent 42, inserted to the opening 41, and fixed to the base substrate 34.
  • the wire bonding with the aluminum wire 48 is performed between the base electrode 46 of the power device chip 32 and the pattern 49 of the control substrate 33 and between the solder 45 and the pattern 47, and the wire bonding with the aluminum wire (not shown) is also performed between a not-shown emitter electrode and a pattern of the control substrate 33 (not shown) to which the emitter terminal 44 is to be connected, to thereby complete the electric connection.
  • the case cover 35 is then attached.
  • a pattern 47 for connection to a collector terminal 44 of each power device chip 32 is provided near an opening 41 of a control substrate 33, and this pattern 47 and a metal portion 43 are connected to each other through solder 51.
  • a heat spreader 39 and the control substrate 33 are fixed to each other firmly through soldering, so that the heat spreader 39 and the control substrate 33 are held surely even if there occurs contraction due to the difference in thermal expansion coefficient between the heat spreader 39 and the control substrate 33. It is therefore possible to improve the reliability against thermal stress.
  • a metal portion 52 similar to the metal portion 43 is provided on the lower surface of the heat spreader 39, and fixed to the base substrate 34 through solder 53.
  • the reference numeral 54 represents an emitter electrode of the power device chip 32, the emitter electrode 54 is being connected through aluminum wire 48 to a pattern 55 of the control substrate 33 to which the emitter terminal 54 is to be connected.

Abstract

In a power module having at least one power device chip and circuits for driving and controlling the power device chip which are incorporated within one and the same package, a heat spreader which is constituted by a material having a heat dissipation property and supports the power device chip on its upper surface is inserted into an opening formed in a control substrate having an upper surface on which patterns for forming the chip driving and controlling circuits and a connection pattern for connection with the power device chip are printed, and the control substrate and the heat spreader inserted into the opening are fixedly supported on a base substrate. Thus, the power device chip and the control substrate can be disposed in plane and reduced in size.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to power modules and particularly relates to a power module in which at least one power device chip and circuits for driving and controlling the power device chip are incorporated within one and the same package.
2. Description of the Related Art
A power module, which is small in size and excellent in workability, and in which at least one power device chip, for example, a power transistor chip, an MOS device chip, a diode chip, a thyristor chip, or the like, and circuits for driving and controlling the power device chip are incorporated within one and the same package has been used widely as an invertor power source circuit for composing a three-phase alternating current wave, or a power source circuit for controlling peripheral equipments.
Since the power device chip generates heat, therefore, there is a case where the heat causes the circuit elements of the built-in circuits for driving and controlling the power device chip to make erroneous operation or to get in failure. In order to protect the circuits for driving and controlling the power device chip from the heat of the power device chip, therefore, the circuits for driving and controlling the power device chip must be separated at a certain extent from the power device chip, and there is a limit in miniaturization of the power module.
There has been therefore proposed a power module having a two-layer inside structure to reduce the area occupied by the power module, as shown in FIGS. 4 and 5. That is, a power module 11 has a two-layer structure of a base substrate 13 and a control substrate 14. The base substrate 13 is constituted by an aluminum substrate or a DBC (direct bonding copper) substrate for supporting power device chips, for example, power transistor chips 12. On the other hand, the control substrate 14 is disposed at a distance above the base substrate 13 and constituted by a printed circuit substrate having printed patterns of circuits for driving and controlling the power transistor chips. An output terminal 15 of the power module is connected to the upper surface of the base substrate 13, and patterns are provided on the base substrate 13 for connection with input/output terminals of the power device chips 12 and the control circuit substrate 14. The control circuit substrate 14 is supported, at a distance above the base substrate 13, by connection terminals 16 which act also as support legs. The input/output terminals of the control circuit substrate 14 are connected to the base substrate 13 through the connection terminals 16. Circuit elements 17 of the circuits for driving and controlling the power transistor chips 12 are mounted on the control circuit substrate 14, and a control terminal 18 is also connected to the control circuit substrate 14. The base substrate 13 and the control circuit substrate 14 are covered with a case cover 19 of synthetic resin. The base substrate 13 is exposed at its lower surface. Alternatively, a heat sink plate may be attached onto the lower surface of the base substrate 13 if necessary.
Each transistor chip 12 employs a bare chip in which a base electrode 20 and an emitter electrode 21 are formed on its upper surface, while its lower surface is formed as a collector terminal 22 as a whole, as shown in FIG. 5. The lower surface, that is, the collector terminal 22, of this transistor chip 12 is fixed, through solder 24, onto the upper surface of a heat spreader 23 of metal such as copper having a high heat conductivity, and the lower surface of the heat spreader 23 is fixed onto the base substrate 13 through solder 25. The base and emitter electrodes 20 and 21 of the transistor chip 12 are connected to predetermined patterns 26 and 27 on the upper surface of the base substrate 13 by the wire bonding with aluminum wire 28. The collector terminal 22 is connected to a predetermined pattern (not shown) on the base substrate 13 through the solder 24 and wire bonding (not shown). The transistor chip 12 fixed on the base substrate 13 is coated with a sealing agent 29 of synthetic resin, as shown in FIG. 4.
Having such a two-layer structure, the power module can be reduced in its area, but it increases its height. Further, there is a defect that it is necessary to provide means for supporting the control circuit substrate 14 above the base substrate 13 and means for electrically connecting the base and control circuit substrates to each other. The structure is therefore made complicated, and the number of assembling steps increases. Further, the base substrate 13 is constituted by an aluminum substrate or a DBC substrate from the point of view of requiring high heat dissipation and insulation, resulting in increased material cost.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a power module which is simplified in the structure of connection between a base substrate supporting power device chips and a control substrate having printed patterns of circuits for driving and controlling the power deice chips.
It is another object of the present invention to provide a power module in which power device chips and circuits for driving and controlling the power device chips are arranged adjacently to each other substantially on one and the same plane.
In order to attain the above objects, according to the present invention, the power module in which at least one power device chip, circuits for driving and controlling the chip, and so on are incorporated within one and the same package comprises: a heat spreader which is constituted by a material having a heat dissipation property and which supports the power device chip on an upper surface thereof; a control substrate which has printed patterns formed on an upper surface thereof for forming the circuits for driving and controlling the chips, and a printed connection pattern formed on the upper surface thereof for connection with the power device chip, and which has an opening for inserting the heat spreader thereinto; and a base substrate which is constituted by a metal plate having a heat dissipation property and which fixedly supports the control substrate and fixedly supports the heat spreader inserted in the opening.
With this structure, the power device chip and the control substrate are supported substantially in one and the same plane so that it is possible to reduce the height to half in comparison with a conventional two-layer system. Further, since the heat spreader is fixed on the base substrate, the heat of the power device chip on the heat spreader is transmitted through the heat spreader to the base substrate so as to be dissipated from the base substrate, so that there is no fear that the heat is given to the circuit elements on the control substrate. It is therefore possible to dispose the circuit elements on the control substrate close to the power device chip to thereby make it possible to reduce the area of the control substrate, so that the power module can be reduced in size on a large scale in comparison with conventional ones.
Further, in the power module according to the present invention, preferably, the power device chip and the connection pattern of the control substrate are connected by wire bonding to make it possible to absorb the difference in thermal expansion coefficient between the heat spreader and the control substrate so that it is possible to improve the reliability against thermal stress. In this case, a part of the terminals of the power device chip may be soldered to the connection pattern of the control substrate so that the heat spreader and the control substrate can be firmly fixed to each other through solder to thereby make it possible to surely hold the heat spreader and the control substrate even if there occurs contraction due to the difference in thermal expansion coefficient between the heat spreader and the control substrate.
Other features and advantages of the present invention will be apparent from the following description of preferred embodiments.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a vertical sectional view illustrating a main portion of a first embodiment of the power module according to the present invention;
FIG. 2 is an enlarged vertical sectional view illustrating a power device chip portion in the first embodiment viewed in the direction different from FIG. 1;
FIG. 3 is an enlarged vertical sectional view illustrating a module according to the present invention; power device chip portion in a second embodiment of the power
FIG. 4 is a vertical sectional view illustrating a main portion of an example of the conventional power module; and
FIG. 5 is an enlarged vertical sectional view illustrating a power device chip portion in the example of FIG. 4.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring to the drawings, preferred embodiments of the present invention will be described under. In the embodiments, the constituent elements which are the same as or equivalent to each other are referenced correspondingly, and the description thereof is not repeated.
First, referring to FIGS. 1 and 2, a first embodiment will be described. A power module 31 is sealed by a base substrate 34 and a case cover 35 provided so as to cover the upper surface of the base substrate 34 with a predetermined space therebetween. The base substrate 34 supports thereon a sheet of control substrate 33 which is a printed circuit substrate on which patterns to be connected to the terminals of power device chips 32 and patterns of circuits for driving and controlling the chips are printed. Circuit elements 36 of the driving and controlling circuits are mounted on the control substrate 33 in the same manner as in the above-mentioned conventional example, and control and output terminals 37 and 38 of the power module 31 are connected to the control substrate 33. The base substrate 34 is constituted by a material such as an aluminum plate or the like having a property of good heat dissipation. A heat sink plate may be attached onto the back surface of the base substrate 34 in order to make the effect of heat dissipation higher.
As shown more in detail in FIG. 2, an opening 41 for inserting therein a heat spreader 39 for supporting each power device chip 32 on its upper surface is formed in the control substrate 33. The heat spreader 39 is made of material, such as aluminum nitride, alumina, or the like, which is superior in heat dissipation and insulation, and the lower surface of the heat spreader 39 is attached to the base substrate 34 through a bonding agent 42. The heat spreader 39 is provided at its upper surface with a metal portion 43 treated with DBC. This metal portion 43 is disposed so that its lower, copper portion is made to contact with the heat spreader 39 and its upper, nickel-plated portion is fixed to a collector terminal 44 of the power device chip 32 through solder 45. Each power device chip 32 has a base electrode 46 and an emitter electrode (not-shown) on its upper surface, and the lower surface as a whole acts as the collector terminal 44. Through wire bonding with aluminum wire 48, the solder 45 is connected to a pattern 47 on the control substrate 33 so that collector terminal 44 is connected to the pattern 47 through the solder 45 and the aluminum wire 48. Through wire bonding with other aluminum wire 48, the base electrode 46 is connected to a pattern 49 on the control substrate 33. The upper surfaces of the patterns 47 and 49 are plated with nickel and the nickel plating is further flash-plated with gold to make the bonding with the aluminum wire 49 sure and firm. Each power device chip 32 is covered with a sealing material 50 composed of epoxy resin, silica powder as a filler, a coloring agent such as carbon black as an additive, a fire retarding material such as an oxalic acid, etc., in order to protect the power device chip physically, chemically and electrically.
Thus, in the power module 31 in this first embodiment, the opening 41 for insertion of the heat spreader 39 is formed in the control substrate 33 so that the heat spreader 39 is inserted into the opening 41 so as to be mounted on the base substrate 34. Accordingly, the power module 31 has a substantially single layer structure so that it is possible to reduce its height to half in comparison with a conventional two-layer system. Further, since the side edge of the heat spreader 39 is disposed at a distance from the side surface of the opening 41, the heat of the power device chip 32 on the heat spreader 39 is not directly transmitted to the control substrate 33 through the heat spreader 39, and since the lower surface of the heat spreader 39 is fixed on the base substrate 34, the heat transmitted to the heat spreader 39 is further transmitted from the heat spreader 39 to the base substrate 34 and dissipated from the base substrate 34. Accordingly, the heat is less transmitted from the heat spreader 39 to the circuit elements on the control substrate 33, so that it is possible to dispose these circuit elements close to the power device chip 32, and it is therefore possible to reduce the area of the control substrate 33. Accordingly, it is possible to reduce the power module 31 in size in comparison with conventional ones. Further, since the power device chip 32 and the control substrate 33 are connected to each other through the aluminum wire 48, it is possible to absorb the difference in the thermal expansion coefficients between the heat spreader 39 and the control substrate 33 to thereby make it possible to improve the reliability against thermal stress.
The assembling work of this power module 31 will be described. First, the power device chip 32 is fixed at its collector terminal 44 side to the metal portion 43 of the heat spreader 39 through the solder 45. Next, the circuit elements 36 of the circuits for driving and controlling the chip are mounted on the control substrate 33, and the control substrate 33 is fixed to the base substrate 34 through the bonding agent 42. The heat spreader 39 is applied with the bonding agent 42, inserted to the opening 41, and fixed to the base substrate 34. The wire bonding with the aluminum wire 48 is performed between the base electrode 46 of the power device chip 32 and the pattern 49 of the control substrate 33 and between the solder 45 and the pattern 47, and the wire bonding with the aluminum wire (not shown) is also performed between a not-shown emitter electrode and a pattern of the control substrate 33 (not shown) to which the emitter terminal 44 is to be connected, to thereby complete the electric connection. The case cover 35 is then attached.
In a second embodiment shown in FIG. 3, a pattern 47 for connection to a collector terminal 44 of each power device chip 32 is provided near an opening 41 of a control substrate 33, and this pattern 47 and a metal portion 43 are connected to each other through solder 51. A heat spreader 39 and the control substrate 33 are fixed to each other firmly through soldering, so that the heat spreader 39 and the control substrate 33 are held surely even if there occurs contraction due to the difference in thermal expansion coefficient between the heat spreader 39 and the control substrate 33. It is therefore possible to improve the reliability against thermal stress. Further, in this second embodiment, a metal portion 52 similar to the metal portion 43 is provided on the lower surface of the heat spreader 39, and fixed to the base substrate 34 through solder 53. Consequently, it is possible to improve the stability of the heat spreader 39 to the base substrate 34. The reference numeral 54 represents an emitter electrode of the power device chip 32, the emitter electrode 54 is being connected through aluminum wire 48 to a pattern 55 of the control substrate 33 to which the emitter terminal 54 is to be connected.
Although the present invention has been described with reference to its preferred embodiments, the description is to make the invention understood, and the invention can be modified variously without departing from the appended claims.

Claims (6)

What is claimed is:
1. A power module having at least one power device chip and circuit elements for driving and controlling said chip, said power module comprising:
a base substrate formed of a metal plate having a heat dissipation property,
a control substrate fixed on the base substrate by a bonding agent, said control substrate having at least one opening, printed patterns formed on an upper surface thereof, and a printed connection pattern formed on the upper surface of the control substrate and connected to the printed patterns, said circuit elements being fixed to the control substrate and connected to the printed patterns,
a heat spreader situated in the opening of the control substrate and fixed to the base substrate by a bonding agent, said heat spreader having a thickness substantially the same as that of the control substrate and formed of a material having a heat dissipation property, said power device chip being fixed on the heat spreader by soldering,
wire bonding connected between said power device chip and said printed connection pattern,
a sealing compound covering an upper surface of the power device chip, a part of the control substrate and the wire bonding, said sealing compound being formed of a resin, silica powder and an additive,
control and output terminals fixed to the control substrate and connected to the printed patterns, and
a case cover fixed to the base substrate for substantially covering the control substrate, the heat spreader with the power device chip and the circuit elements, said case cover being spaced for a predetermined distance away from an upper surface of the control substrate, said control and output terminals fixed on the control substrate extending and passing through the case cover.
2. A power module according to claim 1, wherein said power device chip includes base and emitter electrodes on the upper surface thereof and a collector terminal at a lower surface of the chip, and said heat spreader includes, at an upper surface, an upper metal portion having a heat conductivity and an electric conductivity, said lower surface of the power device chip being connected to the upper metal portion of the heat spreader by the soldering and connected to the printed connection pattern.
3. A power module according to claim 2, wherein said heat spreader includes, at a lower surface, a lower metal portion having a heat conductivity and an electric conductivity, said lower metal portion being connected to the base substrate by soldering, said upper metal portion of the heat spreader being connected to the printed connection pattern by soldering.
4. A power module according to claim 1, in which an upper surface of said printed connection pattern is plated with nickel and the nickel plating is further flash plated with gold, and aluminum wire is used for said wire bonding.
5. A power module according to claim 1, in which said upper metal portion is constituted by DBC in which nickel plating is given to an upper surface of copper, and said nickel plating is connected to the lower surface of said power device chip through soldering.
6. A power module according to claim 1, in which said lower metal portion is constituted by DBC in which nickel plating is given to an upper surface of copper, and said nickel plating is connected to said base substrate through soldering.
US08/136,881 1992-10-20 1993-10-18 Compact power module with a heat spreader Expired - Lifetime US5398160A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP7306792U JP2555796Y2 (en) 1992-10-20 1992-10-20 Power module
JP4-0730067U 1992-10-20
JP073068U JPH0638248U (en) 1992-10-20 1992-10-20 Power module
JP7306992U JPH0638246U (en) 1992-10-20 1992-10-20 Power module
JP4-0730068U 1992-10-20
JP4-0730069U 1992-10-20

Publications (1)

Publication Number Publication Date
US5398160A true US5398160A (en) 1995-03-14

Family

ID=27301113

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/136,881 Expired - Lifetime US5398160A (en) 1992-10-20 1993-10-18 Compact power module with a heat spreader

Country Status (5)

Country Link
US (1) US5398160A (en)
EP (1) EP0594395B1 (en)
KR (1) KR100307465B1 (en)
CN (1) CN1036043C (en)
DE (1) DE69325232T2 (en)

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513072A (en) * 1993-11-18 1996-04-30 Kabushiki Kaisha Toshiba Power module using IMS as heat spreader
US5528458A (en) * 1993-11-25 1996-06-18 Matsushita Electric Industrial Co., Ltd. Integrated circuit device and its manufacturing method
US5721455A (en) * 1995-11-21 1998-02-24 Kabushiki Kaisha Toshiba Semiconductor device having a thermal resistance detector in the heat radiating path
US5754402A (en) * 1995-06-22 1998-05-19 Sumitomo Electric Industries, Ltd. Power amplifying module
US5835352A (en) * 1995-06-22 1998-11-10 Sumitomo Electric Industries, Ltd. Power amplifying module
US5892279A (en) * 1995-12-11 1999-04-06 Northrop Grumman Corporation Packaging for electronic power devices and applications using the packaging
US5926372A (en) * 1997-12-23 1999-07-20 Ford Global Technologies, Inc. Power block assembly and method of making same
US6008988A (en) * 1995-12-20 1999-12-28 Intel Corporation Integrated circuit package with a heat spreader coupled to a pair of electrical devices
US6147868A (en) * 1998-03-19 2000-11-14 Schneider Electric Sa Electronic power components module
US6147869A (en) * 1997-11-24 2000-11-14 International Rectifier Corp. Adaptable planar module
US6201701B1 (en) 1998-03-11 2001-03-13 Kimball International, Inc. Integrated substrate with enhanced thermal characteristics
US6201696B1 (en) * 1997-12-08 2001-03-13 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same
US6259603B1 (en) * 1997-11-13 2001-07-10 Robert Bosch Gmbh Electronic control unit
US6295200B1 (en) * 2000-02-23 2001-09-25 Motorola, Inc. Carrier assembly and method
US6373705B1 (en) * 1999-01-11 2002-04-16 Robert Bosch Gmbh Electronic semiconductor module
US6396125B1 (en) * 1999-08-06 2002-05-28 Fuji Electric Co., Ltd. Semiconductor device
US6445584B1 (en) * 1999-11-05 2002-09-03 Robert Bosch Gmbh Electronic control unit
US6455925B1 (en) * 2001-03-27 2002-09-24 Ericsson Inc. Power transistor package with integrated flange for surface mount heat removal
US20040004818A1 (en) * 2002-07-03 2004-01-08 Autonetworks Technologies, Ltd. Method for waterproofing power circuit section and power module having power circuit section
US20040004816A1 (en) * 2002-07-03 2004-01-08 Autonetworks Technologies, Ltd. Method for waterproofing power circuit section and power module
US20040040327A1 (en) * 2001-07-09 2004-03-04 Masakazu Iida Power module and air conditioner
US20040070946A1 (en) * 2002-08-21 2004-04-15 Mitsuhiro Matsuo Power module and production method thereof
US20040089931A1 (en) * 2002-11-13 2004-05-13 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device
US6775145B1 (en) * 2003-05-14 2004-08-10 Cyntec Co., Ltd. Construction for high density power module package (case II)
US20050136640A1 (en) * 2002-01-07 2005-06-23 Chuan Hu Die exhibiting an effective coefficient of thermal expansion equivalent to a substrate mounted thereon, and processes of making same
US6933604B2 (en) * 2000-10-05 2005-08-23 Sanyo Electric Co., Ltd. Semiconductor device, semiconductor module and hard disk
US20050231922A1 (en) * 2004-04-16 2005-10-20 Jung-Chien Chang Functional printed circuit board module with an embedded chip
US20050280998A1 (en) * 2004-06-18 2005-12-22 Heny Lin Half-bridge power module with insert molded heatsinks
US6983918B1 (en) * 2002-12-31 2006-01-10 Leasure Richard L Drink holder
US20060023426A1 (en) * 2004-07-29 2006-02-02 Aisin Aw Co., Ltd. Automatic transmission electronic control device
US20060157862A1 (en) * 2005-01-19 2006-07-20 Fuji Electric Device Technology, Co., Ltd. Semiconductor device and method for producing the same
US20060214186A1 (en) * 2003-04-02 2006-09-28 Abb Research Ltd. Insulated power semiconductor module with reduced partial discharge and manufacturing method
US20060238983A1 (en) * 2002-11-27 2006-10-26 Abb Research Ltd. Power semiconductor module
US20060263944A1 (en) * 2005-05-23 2006-11-23 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US20070007558A1 (en) * 2005-06-27 2007-01-11 Mazzochette Joseph B Light emitting diode package and method for making same
US20070017310A1 (en) * 2005-06-30 2007-01-25 Denso Corporation Vehicle control system
DE102005049872A1 (en) * 2005-10-18 2007-04-26 Siemens Ag IC component with cooling arrangement
US20070267216A1 (en) * 2006-05-16 2007-11-22 Li-Wei Kuo Base of a circuit board with a heat dissipating capability
US20080153209A1 (en) * 2002-01-07 2008-06-26 Intel Corporation Thinned die integrated circuit package
EP1968188A1 (en) * 2007-03-09 2008-09-10 HÜTTINGER Elektronik GmbH + Co. KG Class D amplifier assembly
US20080266810A1 (en) * 2007-04-30 2008-10-30 Watlow Electric Manufacturing Company Heat management system for a power switching device
US20090146277A1 (en) * 2007-12-11 2009-06-11 Mitsubishi Electric Corporation Semiconductor device
US20090219699A1 (en) * 2006-08-04 2009-09-03 Everlight Electronics Co., Ltd. Circuit board with cooling function
US20100238632A1 (en) * 2006-06-05 2010-09-23 Denso Corporation Load driving device
US20110100681A1 (en) * 2008-04-28 2011-05-05 Peter Kimmich Substrate-mounted circuit module having components in a plurality of contacting planes
US20110127888A1 (en) * 2009-07-03 2011-06-02 Marc Tunzini Alternator with synchronous rectification equipped with an improved electronic power module
DE10213648B4 (en) * 2002-03-27 2011-12-15 Semikron Elektronik Gmbh & Co. Kg The power semiconductor module
US20120075808A1 (en) * 2010-02-12 2012-03-29 Lee Han-Hsiang Electronic package structure
CN102655732A (en) * 2012-05-12 2012-09-05 浙江大学 Power module substrate with heat radiation structure
CN103311231A (en) * 2012-03-09 2013-09-18 富士电机株式会社 Semiconductor device and manufacturing method thereof
US20160039266A1 (en) * 2013-03-26 2016-02-11 Valeo Systemes Thermiques Control module for an electric appliance
US20160150655A1 (en) * 2013-06-18 2016-05-26 Denso Corporation Electronic apparatus
CN106328610A (en) * 2016-09-25 2017-01-11 东莞市联洲知识产权运营管理有限公司 Multi-mode integrated circuit package apparatus
US20170133314A1 (en) * 2015-11-05 2017-05-11 Delta Electronics (Shanghai) Co., Ltd. Package structure and fabricating method thereof
CN107393886A (en) * 2017-08-24 2017-11-24 广东美的制冷设备有限公司 SPM and its manufacture method
CN107481978A (en) * 2017-08-24 2017-12-15 广东美的制冷设备有限公司 SPM and its manufacture method
US9866213B1 (en) 2016-09-08 2018-01-09 United Silicon Carbide, Inc. High voltage switch module
US10039214B2 (en) * 2015-08-06 2018-07-31 Delta Electronics (Shanghai) Co., Ltd Heat spreader and power module
CN109780690A (en) * 2018-11-28 2019-05-21 珠海格力电器股份有限公司 A kind of intelligent wireless power module, control method and transducer air conditioning

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4418426B4 (en) * 1993-09-08 2007-08-02 Mitsubishi Denki K.K. Semiconductor power module and method of manufacturing the semiconductor power module
JPH06326330A (en) * 1993-05-13 1994-11-25 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH07211856A (en) * 1994-01-12 1995-08-11 Fujitsu Ltd Integrated circuit module
DE19528632A1 (en) * 1995-08-04 1997-02-06 Bosch Gmbh Robert Control unit consisting of at least two housing parts
JP2795626B2 (en) * 1995-08-21 1998-09-10 北川工業株式会社 Electronic components with heat dissipation function
JP3516789B2 (en) * 1995-11-15 2004-04-05 三菱電機株式会社 Semiconductor power module
US5960535A (en) * 1997-10-28 1999-10-05 Hewlett-Packard Company Heat conductive substrate press-mounted in PC board hole for transferring heat from IC to heat sink
RU2133523C1 (en) * 1997-11-03 1999-07-20 Закрытое акционерное общество "Техно-ТМ" Three-dimensional electron module
KR100403608B1 (en) * 2000-11-10 2003-11-01 페어차일드코리아반도체 주식회사 Stacked intelligent power module package and manufacturing method thereof
DE10064979C1 (en) * 2000-12-18 2002-02-28 Dieter Loewer Semiconductor circuit device has base plate mounted on heat sink provided with stamped-out sections supporting mounting substrates for semiconductor components
JP2003125588A (en) * 2001-10-12 2003-04-25 Mitsubishi Electric Corp Power converter
DE10316136A1 (en) * 2003-04-09 2004-11-18 Ixys Semiconductor Gmbh Encapsulated power semiconductor arrangement
CN101841994B (en) * 2009-03-21 2013-06-12 富瑞精密组件（昆山）有限公司 Portable electronic device and pluggable cooling device thereof
CN103051188B (en) * 2012-12-07 2015-03-11 聚信科技有限公司 Isolated direct current power module
CN103237412B (en) * 2013-03-27 2016-03-23 苏州远创达科技有限公司 A kind of soft copy mounting structure and manufacture method, soft copy product
CN104632717B (en) * 2013-11-12 2017-04-12 巨铠实业股份有限公司 Cooling structure with ceiling fan controller containing box
US9698076B1 (en) * 2015-12-22 2017-07-04 Ksr Ip Holdings Llc. Metal slugs for double-sided cooling of power module
CN208014673U (en) * 2016-11-29 2018-10-26 Pep创新私人有限公司 Chip-packaging structure
CN109300795B (en) * 2018-09-27 2020-05-19 江苏矽智半导体科技有限公司 Semiconductor power device package and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4521476A (en) * 1982-08-19 1985-06-04 Denki Kagaku Kogyo Kabushiki Kaisha Hybrid integrated circuit and preparation thereof
US4924351A (en) * 1985-06-20 1990-05-08 Kabushiki Kaisha Toshiba Recessed thermally conductive packaged semiconductor devices
US5095404A (en) * 1990-02-26 1992-03-10 Data General Corporation Arrangement for mounting and cooling high density tab IC chips
US5198964A (en) * 1990-09-27 1993-03-30 Hitachi, Ltd. Packaged semiconductor device and electronic device module including same
US5245510A (en) * 1992-05-22 1993-09-14 Mitsubishi Denki Kabushiki Kaisha Hybrid integrated circuit device
US5272375A (en) * 1991-12-26 1993-12-21 E. I. Du Pont De Nemours And Company Electronic assembly with optimum heat dissipation
US5287247A (en) * 1990-09-21 1994-02-15 Lsi Logic Corporation Computer system module assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0364049A (en) * 1989-08-02 1991-03-19 Hitachi Ltd Hybrid integrated circuit device
JPH0376255A (en) * 1989-08-18 1991-04-02 Fujitsu Ltd Semiconductor device mounting structure
JPH04105350A (en) * 1990-08-24 1992-04-07 Fujitsu Ltd Semiconductor chip mounting structure
JPH04112560A (en) * 1990-08-31 1992-04-14 Sanyo Electric Co Ltd Hybrid integrated circuit
JPH0547968A (en) * 1991-08-20 1993-02-26 Fujitsu Ltd Cooling structure of electronic device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4521476A (en) * 1982-08-19 1985-06-04 Denki Kagaku Kogyo Kabushiki Kaisha Hybrid integrated circuit and preparation thereof
US4924351A (en) * 1985-06-20 1990-05-08 Kabushiki Kaisha Toshiba Recessed thermally conductive packaged semiconductor devices
US5095404A (en) * 1990-02-26 1992-03-10 Data General Corporation Arrangement for mounting and cooling high density tab IC chips
US5287247A (en) * 1990-09-21 1994-02-15 Lsi Logic Corporation Computer system module assembly
US5198964A (en) * 1990-09-27 1993-03-30 Hitachi, Ltd. Packaged semiconductor device and electronic device module including same
US5272375A (en) * 1991-12-26 1993-12-21 E. I. Du Pont De Nemours And Company Electronic assembly with optimum heat dissipation
US5245510A (en) * 1992-05-22 1993-09-14 Mitsubishi Denki Kabushiki Kaisha Hybrid integrated circuit device

Cited By (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513072A (en) * 1993-11-18 1996-04-30 Kabushiki Kaisha Toshiba Power module using IMS as heat spreader
US5528458A (en) * 1993-11-25 1996-06-18 Matsushita Electric Industrial Co., Ltd. Integrated circuit device and its manufacturing method
US5754402A (en) * 1995-06-22 1998-05-19 Sumitomo Electric Industries, Ltd. Power amplifying module
US5835352A (en) * 1995-06-22 1998-11-10 Sumitomo Electric Industries, Ltd. Power amplifying module
US5721455A (en) * 1995-11-21 1998-02-24 Kabushiki Kaisha Toshiba Semiconductor device having a thermal resistance detector in the heat radiating path
US5892279A (en) * 1995-12-11 1999-04-06 Northrop Grumman Corporation Packaging for electronic power devices and applications using the packaging
US6008988A (en) * 1995-12-20 1999-12-28 Intel Corporation Integrated circuit package with a heat spreader coupled to a pair of electrical devices
US6259603B1 (en) * 1997-11-13 2001-07-10 Robert Bosch Gmbh Electronic control unit
US6147869A (en) * 1997-11-24 2000-11-14 International Rectifier Corp. Adaptable planar module
US6272015B1 (en) * 1997-11-24 2001-08-07 International Rectifier Corp. Power semiconductor module with insulation shell support for plural separate substrates
US6201696B1 (en) * 1997-12-08 2001-03-13 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same
US6597063B1 (en) 1997-12-08 2003-07-22 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same
US5926372A (en) * 1997-12-23 1999-07-20 Ford Global Technologies, Inc. Power block assembly and method of making same
US6201701B1 (en) 1998-03-11 2001-03-13 Kimball International, Inc. Integrated substrate with enhanced thermal characteristics
US6147868A (en) * 1998-03-19 2000-11-14 Schneider Electric Sa Electronic power components module
US6373705B1 (en) * 1999-01-11 2002-04-16 Robert Bosch Gmbh Electronic semiconductor module
US6396125B1 (en) * 1999-08-06 2002-05-28 Fuji Electric Co., Ltd. Semiconductor device
US6445584B1 (en) * 1999-11-05 2002-09-03 Robert Bosch Gmbh Electronic control unit
US6295200B1 (en) * 2000-02-23 2001-09-25 Motorola, Inc. Carrier assembly and method
US6933604B2 (en) * 2000-10-05 2005-08-23 Sanyo Electric Co., Ltd. Semiconductor device, semiconductor module and hard disk
US6455925B1 (en) * 2001-03-27 2002-09-24 Ericsson Inc. Power transistor package with integrated flange for surface mount heat removal
EP1406303A1 (en) * 2001-07-09 2004-04-07 Daikin Industries, Ltd. Power module and air conditioner
US20040040327A1 (en) * 2001-07-09 2004-03-04 Masakazu Iida Power module and air conditioner
US7003970B2 (en) * 2001-07-09 2006-02-28 Daikin Industries, Ltd. Power module and air conditioner
EP1406303A4 (en) * 2001-07-09 2007-12-12 Daikin Ind Ltd Power module and air conditioner
US7420273B2 (en) 2002-01-07 2008-09-02 Intel Corporation Thinned die integrated circuit package
US20080153209A1 (en) * 2002-01-07 2008-06-26 Intel Corporation Thinned die integrated circuit package
US7888183B2 (en) 2002-01-07 2011-02-15 Intel Corporation Thinned die integrated circuit package
US20050136640A1 (en) * 2002-01-07 2005-06-23 Chuan Hu Die exhibiting an effective coefficient of thermal expansion equivalent to a substrate mounted thereon, and processes of making same
DE10213648B4 (en) * 2002-03-27 2011-12-15 Semikron Elektronik Gmbh & Co. Kg The power semiconductor module
US20040004816A1 (en) * 2002-07-03 2004-01-08 Autonetworks Technologies, Ltd. Method for waterproofing power circuit section and power module
US6924985B2 (en) * 2002-07-03 2005-08-02 Autonetworks Technologies, Ltd. Method of waterproofing power circuit section and power module having power circuit section
US20040004818A1 (en) * 2002-07-03 2004-01-08 Autonetworks Technologies, Ltd. Method for waterproofing power circuit section and power module having power circuit section
US20040070946A1 (en) * 2002-08-21 2004-04-15 Mitsuhiro Matsuo Power module and production method thereof
US7057896B2 (en) * 2002-08-21 2006-06-06 Matsushita Electric Industrial Co., Ltd. Power module and production method thereof
US6903457B2 (en) * 2002-11-13 2005-06-07 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device
US20040089931A1 (en) * 2002-11-13 2004-05-13 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device
US7768139B2 (en) * 2002-11-27 2010-08-03 Abb Research Ltd Power semiconductor module
US20060238983A1 (en) * 2002-11-27 2006-10-26 Abb Research Ltd. Power semiconductor module
US6983918B1 (en) * 2002-12-31 2006-01-10 Leasure Richard L Drink holder
US20060214186A1 (en) * 2003-04-02 2006-09-28 Abb Research Ltd. Insulated power semiconductor module with reduced partial discharge and manufacturing method
US6775145B1 (en) * 2003-05-14 2004-08-10 Cyntec Co., Ltd. Construction for high density power module package (case II)
US20050231922A1 (en) * 2004-04-16 2005-10-20 Jung-Chien Chang Functional printed circuit board module with an embedded chip
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
US20050280998A1 (en) * 2004-06-18 2005-12-22 Heny Lin Half-bridge power module with insert molded heatsinks
US7375966B2 (en) * 2004-07-29 2008-05-20 Aisin Aw Co., Ltd. Automatic transmission electronic control device
US20060023426A1 (en) * 2004-07-29 2006-02-02 Aisin Aw Co., Ltd. Automatic transmission electronic control device
US20060157862A1 (en) * 2005-01-19 2006-07-20 Fuji Electric Device Technology, Co., Ltd. Semiconductor device and method for producing the same
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US20060263944A1 (en) * 2005-05-23 2006-11-23 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US20070007558A1 (en) * 2005-06-27 2007-01-11 Mazzochette Joseph B Light emitting diode package and method for making same
US20070017310A1 (en) * 2005-06-30 2007-01-25 Denso Corporation Vehicle control system
DE102005049872B4 (en) * 2005-10-18 2010-09-23 Continental Automotive Gmbh IC component with cooling arrangement
DE102005049872A1 (en) * 2005-10-18 2007-04-26 Siemens Ag IC component with cooling arrangement
US20070267216A1 (en) * 2006-05-16 2007-11-22 Li-Wei Kuo Base of a circuit board with a heat dissipating capability
US20100238632A1 (en) * 2006-06-05 2010-09-23 Denso Corporation Load driving device
US8102047B2 (en) * 2006-06-05 2012-01-24 Denso Corporation Load driving device
US7808786B2 (en) * 2006-08-04 2010-10-05 Everlight Electronics Co., Ltd. Circuit board with cooling function
US20090219699A1 (en) * 2006-08-04 2009-09-03 Everlight Electronics Co., Ltd. Circuit board with cooling function
EP1968188A1 (en) * 2007-03-09 2008-09-10 HÜTTINGER Elektronik GmbH + Co. KG Class D amplifier assembly
US7705676B2 (en) 2007-03-09 2010-04-27 Huettinger Elektronik Gmbh + Co. Kg Class D amplifier arrangement
US20080218264A1 (en) * 2007-03-09 2008-09-11 Huettinger Gmbh + Co. Kg Class d amplifier arrangement
US7561430B2 (en) * 2007-04-30 2009-07-14 Watlow Electric Manufacturing Company Heat management system for a power switching device
US20080266810A1 (en) * 2007-04-30 2008-10-30 Watlow Electric Manufacturing Company Heat management system for a power switching device
US7847390B2 (en) * 2007-12-11 2010-12-07 Mitsubishi Electric Corporation Semiconductor device
US20090146277A1 (en) * 2007-12-11 2009-06-11 Mitsubishi Electric Corporation Semiconductor device
US20110100681A1 (en) * 2008-04-28 2011-05-05 Peter Kimmich Substrate-mounted circuit module having components in a plurality of contacting planes
US8531067B2 (en) * 2009-07-03 2013-09-10 Valeo Equipments Electriques Moteur Alternator with synchronous rectification equipped with an improved electronic power module
US20110127888A1 (en) * 2009-07-03 2011-06-02 Marc Tunzini Alternator with synchronous rectification equipped with an improved electronic power module
US8619428B2 (en) * 2010-02-12 2013-12-31 Cyntec Co., Ltd. Electronic package structure
US20120075808A1 (en) * 2010-02-12 2012-03-29 Lee Han-Hsiang Electronic package structure
CN103311231B (en) * 2012-03-09 2017-06-16 富士电机株式会社 Semiconductor devices and its manufacture method
CN103311231A (en) * 2012-03-09 2013-09-18 富士电机株式会社 Semiconductor device and manufacturing method thereof
CN102655732A (en) * 2012-05-12 2012-09-05 浙江大学 Power module substrate with heat radiation structure
US20160039266A1 (en) * 2013-03-26 2016-02-11 Valeo Systemes Thermiques Control module for an electric appliance
US10479169B2 (en) * 2013-03-26 2019-11-19 Valeo Systemes Thermiques Control module for an electric appliance
US20160150655A1 (en) * 2013-06-18 2016-05-26 Denso Corporation Electronic apparatus
US10039214B2 (en) * 2015-08-06 2018-07-31 Delta Electronics (Shanghai) Co., Ltd Heat spreader and power module
US20170133314A1 (en) * 2015-11-05 2017-05-11 Delta Electronics (Shanghai) Co., Ltd. Package structure and fabricating method thereof
CN106684076A (en) * 2015-11-05 2017-05-17 台达电子企业管理（上海）有限公司 Packaging structure and manufacture method thereof
CN106684076B (en) * 2015-11-05 2019-09-06 台达电子企业管理（上海）有限公司 Encapsulating structure and its manufacturing method
US10128181B2 (en) * 2015-11-05 2018-11-13 Delta Electronics (Shanghai) Co., Ltd. Package structure and fabricating method thereof
US9866213B1 (en) 2016-09-08 2018-01-09 United Silicon Carbide, Inc. High voltage switch module
CN106328610A (en) * 2016-09-25 2017-01-11 东莞市联洲知识产权运营管理有限公司 Multi-mode integrated circuit package apparatus
CN106328610B (en) * 2016-09-25 2018-12-07 绍兴柯桥东进纺织有限公司 A kind of multi-mode integrated circuit packaging system
CN107481978A (en) * 2017-08-24 2017-12-15 广东美的制冷设备有限公司 SPM and its manufacture method
CN107393886A (en) * 2017-08-24 2017-11-24 广东美的制冷设备有限公司 SPM and its manufacture method
CN109780690A (en) * 2018-11-28 2019-05-21 珠海格力电器股份有限公司 A kind of intelligent wireless power module, control method and transducer air conditioning

Also Published As

Publication number Publication date
DE69325232D1 (en) 1999-07-15
KR100307465B1 (en) 2001-12-15
EP0594395A3 (en) 1995-01-11
EP0594395A2 (en) 1994-04-27
DE69325232T2 (en) 2000-02-17
EP0594395B1 (en) 1999-06-09
KR940010293A (en) 1994-05-24
CN1086373A (en) 1994-05-04
CN1036043C (en) 1997-10-01

Similar Documents

Publication Publication Date Title
US5398160A (en) Compact power module with a heat spreader
US6324072B1 (en) Microelectronic component of sandwich construction
US6272015B1 (en) Power semiconductor module with insulation shell support for plural separate substrates
JP3429921B2 (en) Semiconductor device
US6972479B2 (en) Package with stacked substrates
US7714428B2 (en) High power semiconductor package and method of making the same
KR100229858B1 (en) Semiconductor device
KR950024311A (en) Electronic package with thermally conductive support member to which thin circuit board and semiconductor device are bonded
KR20090056594A (en) Semiconductor power module package with temperature sensor mounted thereon and method of fabricating the same
JP3881502B2 (en) Power semiconductor module
US6091142A (en) Assembly for dissipating heat from a stacked semiconductor package
JPH05304248A (en) Semiconductor device
US7310224B2 (en) Electronic apparatus with thermal module
EP4258348A1 (en) Discrete power semiconductor package
JP4051027B2 (en) Power semiconductor device module
US20070063334A1 (en) Semiconductor device
JPH11307721A (en) Power module device and manufacture therefor
JPH0922970A (en) Electronic component
JPH08148647A (en) Semiconductor device
US6291893B1 (en) Power semiconductor device for “flip-chip” connections
US20230245948A1 (en) Semiconductor device and manufacturing method thereof
US20050127526A1 (en) Semi conductor device
JP3372169B2 (en) Semiconductor package
CN114556554A (en) Substrate, packaging structure and electronic equipment
JP2512289B2 (en) Resin-sealed semiconductor device

Legal Events

Date Code Title Description
AS Assignment

Owner name: FUJITSU GENERAL LIMITED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:UMEDA, OSAMU;REEL/FRAME:006731/0624

Effective date: 19931007

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12