Recherche Images Maps Play YouTube Actualités Gmail Drive Plus »
Connexion
Les utilisateurs de lecteurs d'écran peuvent cliquer sur ce lien pour activer le mode d'accessibilité. Celui-ci propose les mêmes fonctionnalités principales, mais il est optimisé pour votre lecteur d'écran.

Brevets

  1. Recherche avancée dans les brevets
Numéro de publicationUS5598059 A
Type de publicationOctroi
Numéro de demandeUS 08/424,222
Date de publication28 janv. 1997
Date de dépôt19 avr. 1995
Date de priorité28 avr. 1994
État de paiement des fraisPayé
Numéro de publication08424222, 424222, US 5598059 A, US 5598059A, US-A-5598059, US5598059 A, US5598059A
InventeursSey-Shing Sun, Richard T. Tuenge
Cessionnaire d'originePlanar Systems, Inc.
Exporter la citationBiBTeX, EndNote, RefMan
Liens externes: USPTO, Cession USPTO, Espacenet
Alternating current, thin film electroluminescent
US 5598059 A
Résumé
An AC thin film electroluminescent (TFEL) device includes a multilayer phosphor for emitting white light having improved emission intensity in the blue region of the spectrum. The multilayer stack consists of an inverted structure thin film stack having a red light emitting manganese doped zinc sulfide (ZnS:Mn) layer disposed on a first insulating layer; a blue-green light emitting cerium doped strontium sulfide (SrS:Ce) layer disposed on the red light emitting layer; and a blue light emitting cerium activated thiogallate phosphor (Srx Ca1-x Ga2 S4 :Ce) layer disposed on the blue-green light emitting layer. The manganese doped zinc sulfide layer acts as a nucleating layer that lowers the threshold voltage, and the cerium activated thiogallate phosphor layer provides a moisture barrier for the hydroscopic cerium doped strontium sulfide layer. The white light from the multilayer phosphor can be appropriately filtered to produce any desired color.
Images(5)
Previous page
Next page
Revendications(5)
What is claimed is:
1. An AC thin film electroluminescent (TFEL) device including a plurality of phosphor layers for forming a white light-emitting phosphor comprising:
(a) a bottom substrate;
(b) a first electrode layer deposited on the bottom substrate;
(c) a first insulating layer deposited on the first electrode layer;
(d) a red light-emitting phosphor layer comprising a ZnS:Mn layer deposited on the first insulating layer;
(e) a blue green light-emitting phosphor layer comprising an SrS:Ce layer deposited on the red light-emitting phosphor layer;
(f) a blue light-emitting phosphor layer comprising a Srx Ca1-x Ga2 S4 :Ce layer, where 1≧x≧0, deposited on the blue green layer;
(g) a transparent second insulating layer placed atop the blue light-emitting phosphor layer; and
(h) a transparent second electrode layer deposited on the transparent second insulating layer.
2. The TFEL device of claim 1 wherein the ZnS:Mn layer has a thickness of between 150 and 300 nm, the SrS:Ce layer has a thickness of between 600 and 1200 nm, and the Srx Ca1-x Ga2 S4 :Ce layer has a thickness of between 200 and 400 nm.
3. The AC TFEL device of claim 2 wherein the ZnS:Mn layer, the SrS:Ce layer and the Srx Ca1-x Ga2 S4 :Ce layer are all sputtered phosphor layers.
4. The AC TFEL device of claim 1 wherein x=0.5.
5. The AC TFEL device of claim 1 wherein x=0.
Description

This is a continuation-in-part of application Ser. No. 08/234,567 filed on Apr. 28, 1994, now abandoned.

BACKGROUND OF THE INVENTION

This invention relates to an ac thin film electroluminescent (AC TFEL) device and more particularly to an AC TFEL device having a white light emitting multilayer phosphor material.

White light emission can be obtained by combining three primary color emissions, for example, by combining red, green and blue light emissions, or by combining complimentary color emissions. Thus, white light emission can be obtained from a single thin film phosphor layer having emissions in the red, green and blue regions of the color spectrum. The emission spectrum of a white light emitting phosphor may consist of either narrow emission bands at appropriate wavelengths for red, green and blue light or a broad emission band extending over the entire visible spectrum. White light emissions can also be obtained by combining phosphor layers, each of which may emit light primarily in a single region of the color spectrum.

Current attempts to produce full color thin film electroluminescent panels typically include fabricating panels having one of two different basic phosphor structures: (a) a patterned structure where stripes of three primary color light-emitting phosphors are deposited side by side on a common electrode/insulator substrate or (b) a layered structure which may include single or multiple phosphor layers emitting either white light, or the three main spectral components of white light, combined with patterned color filters. It is also known to combine the two basic phosphor structures into a hybrid structure having side-by-side patterned red and green light-emitting phosphor stripes on one substrate combined with an unpatterned blue light-emitting layer on a second substrate. In order to fabricate a full color EL device using a broad band white light-emitting phosphor, the broad band emitting phosphor must provide significant emission intensity over a wide wavelength range in order to achieve three sufficiently bright saturated primary colors when combined with suitable color filters.

Tanaka and others, in "Bright White-Light Electroluminescence Based on Nonradiative Energy Transfer in Ce- and Eu-doped SrS Thin Films," 51 Appl. Phys Lett., 1661 (Nov. 1987), report a single layer white light-emitting phosphor, SrS:Ce,Eu,K, which emits electroluminescence over a broad band.

Tanaka and others, in "White Light Emitting Thin-Film Electroluminescent Devices with SrS:Ce,Cl/ZnS:Mn Double Phosphor Layers," 25 Jpn. J. Appl. Phys. L225 (Mar. 1986), disclose a multiple-layered white light emitting phosphor consisting of a greenish-blue light emitting SrS:Ce,Cl and a yellowish-orange light emitting ZnS:Mn.

Ono and others, in "White-Light Emitting Thin Film Electroluminescent Devices with Stacked SrS:Ce/CaS:Eu Active Layers," 66 J. Appl. Phys., 5564 (Dec. 1989), disclose a white light emitting phosphor obtained by stacking layers of blue-green light emitting SrS:Ce and red light emitting CaS:Eu.

Mauch and others, in "ZnS:Mn/SrS:Ce Multilayer Devices for Full-Color EL Applications," SID 93 Digest, 769 (1993), disclose a broad band emitting phosphor consisting of multiple layers of manganese-doped zinc sulfide and cerium-doped strontium sulfide (ZnS:Mn/SrS:Ce), where nine such double layers are employed.

None of these known phosphors exhibits significant emission intensity in the blue region of the spectrum, 450-480 nm. The major peak of cerium emission in strontium sulfide is located at 480 nm. Thus, very little deep blue emission can be obtained through filtering the emission of a cerium-doped strontium sulfide phosphor. Low emission intensity at the 450-480 nm wavelengths will limit the color gamut in the blue region that can be achieved for a color-filtered full color panel and will affect the chromaticity of the combined white color.

Barrow and others, in "A New Class of Blue TFEL Phosphors with Application to a VGA Full-Color Display," SID 93 Digest 761 (1993), disclose a hybrid phosphor structure for a full-color display panel consisting of patterned red light-emitting zinc sulfide doped with manganese (ZnS:Mn) and patterned green light-emitting zinc sulfide doped with terbium (ZnS:Tb) phosphors and a cerium activated calcium thiogallate phosphor layer (CaGa2 S4 :Ce) as the unfiltered blue light emitter. However, both the patterned phosphor structure and the hybrid phosphor structure are difficult to manufacture in the very high resolution structures, about 1000 lines per inch, required for head mounted display panels.

What is still needed is a broad band or white light emitting phosphor having improved emission intensity in the blue region and a large color gamut.

SUMMARY OF THE INVENTION

The present invention addresses the problems of the known broad band emitting phosphors by providing a multilayer white light-emitting phosphor material for an AC TFEL device which has an improved emission intensity in the blue region and a wide color gamut. In one embodiment the multilayer phosphor material consists of a red light-emitting phosphor layer and an alkaline earth thiogallate phosphor layer which includes a rare earth activator dopant RE taken from the group cerium and europium, the multilayer phosphor material having light emissions in the green portion of the spectrum. The alkaline earth thiogallate phosphor layer can be represented by the formula Cax Sr1-x Ga2 S4 :RE, where x is a number between 0 and 1. Calcium and strontium are thus each present in the blue light-emitting thiogallate layer.

The peak wavelength measured for an alkaline earth thiogallate phosphor varies as a function of the alkaline earth ion. Peak wavelengths of 459, 445, and 452 nm, respectively, are obtained for cerium activated calcium thiogallate, strontium thiogallate and barium thiogallate. Thus, by adjusting the ratio of calcium to strontium and by the selection of the rare earth dopant in the thiogallate layer more saturated blue color and the desired color gamut is obtained for the phosphor material.

In a second embodiment of the present invention a white light-emitting multilayer phosphor for an AC TFEL device has a phosphor material consisting of at least one red light-emitting phosphor layer and at least one alkaline earth thiogallate phosphor layer including a dopant. The alkaline earth is taken from the group calcium and strontium, and the dopant is a rare earth activator dopant taken from the group cerium and europium. At least one alkaline earth thiogallate phosphor layer of the multilayer phosphor includes more than one dopant. A thiogallate layer which is doped with both cerium and europium provides enhanced emission in both the blue and green regions of the spectrum.

In a third embodiment of the present invention, a white light-emitting multilayer phosphor material consists of an alkaline earth thiogallate phosphor layer including a rare earth dopant, and an alkaline earth sulfide phosphor layer including a rare earth dopant. The alkaline earth is taken from the group calcium and strontium, and the rare earth dopant is taken from the group cerium and europium. The multilayer phosphor material has light emissions in at least both the red and green portions of the spectrum. Combining an alkaline earth thiogallate phosphor layer and an alkaline earth sulfide phosphor layer, each layer including a rare earth dopant, provides enhanced emission in the blue region of the spectrum.

Each embodiment of the present invention thus provides a white light-emitting phosphor having an improved emission intensity in the blue region and a large color gamut.

An AC thin film electroluminescent (TFEL) device including a white light-emitting multilayer phosphor consists of a first electrode deposited on a transparent substrate, a second electrode, at least two insulating layers located between the first and second electrodes, and a white light-emitting multilayer phosphor material of the present invention as described above sandwiched between the two insulating layers.

The foregoing and other objectives, features, and advantages of the invention will be more readily understood upon consideration of the following detailed description of the invention, taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION THE DRAWINGS

FIG. 1 is a sectional view of a schematic diagram of a portion of an AC TFEL device constructed according to the present invention.

FIG. 2 is an enlarged sectional view of a portion of the TFEL device shown in FIG. 1.

FIGS. 3-7 are alternative embodiments of the portion of the TFEL device shown in FIG. 2.

FIGS. 8 and 9 show emission spectra of multilayer phosphors embodying the present invention.

FIG. 10 shows a CIE chromaticity diagram of a multilayer phosphor embodying the present invention.

FIG. 11 is a sectional view of a schematic diagram of a preferred embodiment of a multi-layer AC TFEL phosphor material.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to FIG. 1, a TFEL laminate structure 10 embodying the present invention includes a first electrode 12 deposited on a transparent glass substrate 14. The first electrode 12 is a film of a transparent material such as indium tin oxide (ITO) or a metal which is preferably a refractory metal such as molybdenum. A first insulator layer 16, which is composed of a layer of aluminum oxide-titanium dioxide (Al2 O3 --TiO2 or aluminate-titanate, commonly known as ATO), a barium tantalate (BaTa2 O6), or an insulator material having a perovskite structure such as strontium titanate (SrTiO3), is deposited on the first electrode 12. A white light-emitting multilayer phosphor material 18 is located between the first insulator layer 16 and a second insulator layer 20. The second insulator layer 20 is either an aluminate-titanate (ATO) or a barium tantalate (BaTa2 O6). Other insulating layers such as silicon oxynitride (SiON), silicon nitride (Si3 N4) or Sr(Ti,Zr)O3, a mixed strontium titanate and zirconate, can also be used for the first insulator layer, and insulating layers such as ATO, SiON or Si3 N4 can also be used for the second insulator layer. The insulator layers typically each have a thickness of about 300 nm. A second electrode 22 is deposited over the second insulator layer 20.

Referring to FIG. 1, in a preferred embodiment of the present invention, the electrode 12 adjacent the transparent glass substrate 14 is a metal electrode such as a molydenum film. The first insulator layer 16 adjacent the metal electrode is an aluminum oxide-titanium dioxide (ATO) and the second insulator layer 20 is barium tantalate (BaTa2 O6). The second electrode 22 is a transparent conductor electrode such as an ITO electrode. Such an electrode structure, wherein a metal electrode is adjacent the transparent substrate, is herein referred to as an inverted electrode configuration or structure.

As depicted schematically in FIG. 1, a full color or multicolor AC TFEL device can be fabricated with an inverted electrode configuration using a white light-emitting phosphor with patterned red 24, green 26 and blue 28 filters over each pixel. One of the pixel's electrodes is subdivided so that either only part of the pixel under each of the red, green and blue filters, or combinations of the subpixels, can be energized at the same time. Any color hue within the boundaries of the triangular region determined by connecting the CIE coordinates of the respective red, green and blue color emissions can be obtained by varying the ratio of the voltages supplied to the individual subpixels.

Referring to FIG. 2, in one embodiment of the present invention the white light-emitting multilayer phosphor material 18 is composed of a red light-emitting phosphor layer and an alkaline earth thiogallate phosphor layer including a rare earth dopant RE, the thiogallate layer being represented by the formula Cax Sr1-x Ga2 S4 :RE. The rare earth dopant is taken from the group cerium and europium, and x is a number between 0 and 1. The thickness of each phosphor layer and the ratio between strontium and calcium in the thiogallate layer can be adjusted to achieve the desired color gamut and luminescence. As shown schematically in FIG. 2, an example of such a multilayer phosphor material consists of a red light-emitting zinc sulfide phosphor layer 30 having a dopant manganese, represented by the formula ZnS:Mn, and an alkaline earth thiogallate phosphor layer 32 having the dopant cerium. One such zinc sulfide phosphor layer and one such alkaline earth thiogallate phosphor layer form a stack 34. Up to 25 stacks may be combined to form the multilayer phosphor material 18. When x is 0.5, one stack of such a multilayer phosphor material is represented by the formula Ca0.5 Sr0.5 Ga2 S4 :Ce/ZnS:Mn. When describing a multi-layer structure the use of the slash mark (/) indicates that the compounds are separate layers.

As shown schematically in FIG. 3, an alkaline earth thiogallate phosphor layer 36 having the dopant cerium, which provides the blue and some green component in the emission spectrum, is sandwiched between a zinc sulfide phosphor layer 38 having the dopant manganese, which provides the red component, and a zinc sulfide phosphor layer 40 having the dopant terbium, which provides a green component of the emission spectrum. These three layers form a stack 42 of phosphor material, as represented by the formula ZnS:Mn/Cax Sr1-x Ga2 S4 :Ce/ZnS:Tb, where 0<x<1. As illustrated in FIG. 3, more than one stack of the multilayer phosphor material may be deposited to form the white light-emitting multilayer phosphor material. Up to 25 stacks of the phosphor material may be deposited.

As shown in FIG. 4, in an alternative embodiment of a white light-emitting multilayer phosphor, the multilayer phosphor material 18 consists of at least one red light-emitting phosphor layer and at least one alkaline earth thiogallate phosphor layer including a dopant. The alkaline earth is taken from the group calcium and strontium. The dopant is a rare earth activator dopant taken from the group cerium and europium. At least one alkaline earth thiogallate layer is doped with both cerium and europium. The additional europium doping provides enhanced green emission, The red light-emitting phosphor layer can be a zinc sulfide layer 44 having a dopant manganese. The alkaline earth thiogallate phosphor layer 46 can be represented by the formula Cax Sr1-x Ga2 S4 :Ce,Eu, where 0≦x≦1. These two layers form a stack 48 of the phosphor material.

Referring to FIG. 6, in another embodiment of the present invention, the white light-emitting multilayer phosphor material 18 includes an alkaline earth thiogallate phosphor layer having a dopant RE and an alkaline earth sulfide phosphor layer having a dopant RE. The alkaline earth is taken from the group calcium and strontium, and the dopant is a rare earth activator dopant taken from the group cerium and europium. The multilayer phosphor material has light emissions in at least both the red and green portions of the spectrum. One such multilayer phosphor material includes an alkaline earth thiogallate phosphor layer 54 having the dopant cerium and an alkaline earth sulfide phosphor layer 56 having the dopants cerium and europium. The multilayer phosphor material can be deposited to form a stack 58 of the multilayer phosphor material, where the stack is represented by the formula Cax Sr1-x Ga2 S4 :Ce/ZnS/Cay Sr1-y S:Ce,Eu where 0≦x≦1, and 0≦y≦1. The alkaline earth sulfide phosphor layer 56 with dopants cerium and europium provides a broad band emission and the alkaline earth thiogallate phosphor layer 54 provides enhanced emission in the blue region of the spectrum. A layer 60 of zinc sulfide is located between the thiogallate phosphor layer and the alkaline earth sulfide phosphor layer.

Alternatively, as shown in FIG. 7, the multilayer phosphor material 18 may include the blue light-emitting alkaline earth thiogallate phosphor layer 62 having the dopant cerium, a blue-green light emitting strontium sulfide phosphor layer 64 having the dopant cerium and a red light-emitting calcium sulfide phosphor layer 66 having the dopant europium. The multilayer phosphor material can be deposited to form a stack 68 represented by the formula Cax Sr1-x Ga2 S4 :Ce/ZnS/SrS:Ce/CaS:Eu, where 0≦x≦1. A layer 70 of zinc sulfide is located between the thiogallate phosphor layer and the alkaline earth sulfide phosphor layers.

As shown in FIG. 5, another such multilayer phosphor consists of a blue light-emitting alkaline earth thiogallate phosphor layer including the dopant cerium, a red light-emitting zinc sulfide layer including a dopant manganese, and a blue-green light-emitting strontium sulfide phosphor layer including the dopant cerium. The phosphor material may be deposited in layers to form a stack 56 represented by the formula Cax Sr1-x Ga2 S4 :Ce/ZnS:Mn/SrS:Ce, where 0≦x≦1. When x is 1, the alkaline earth thiogallate layer 50 having the dopant cerium is represented by the formula CaGa2 S4 :Ce, the zinc sulfide phosphor layer 52 including the dopant manganese is represented by the formula ZnS:Mn, the strontium sulfide phosphor layer 54 including the dopant cerium is represented by the formula SrS:Ce. The phosphor material is represented by the formula CaGa2 S4 :Ce/ZnS:Mn/SrS:Ce.

In general, the layers of the white light-emitting phosphor material are deposited using vacuum deposition techniques. Typical thicknesses for the phosphor layers are 500-1500 nm for the alkaline earth sulfide layers and 300-500 nm for the alkaline earth thiogallate layers. However, when the multilayer phosphor material consists of more than one stack, each phosphor layer is between 5 and 50 nm thick and up to 25 stacks may be deposited to form the multilayer phosphor.

To prepare a single stack of the multilayer white light emitting phosphor represented by the formula CaGa2 S4 :Ce/ZnS:Mn/SrS:Ce shown in FIG. 5, first the blue light-emitting cerium activated calcium thiogallate phosphor 50 is deposited in a layer 200 to 400 nm thick. The red light-emitting manganese doped zinc sulfide phosphor 52 is deposited in a layer 150 to 300 nm thick atop the thiogallate layer. Finally, the blue-green light-emitting cerium doped strontium sulfide phosphor layer 54 is deposited in a layer 600 to 1200 nm thick. Each phosphor layer can be deposited by a vacuum deposition technique such as sputtering or atomic layer epitaxy.

FIG. 8 shows a calculated emission spectrum of CaGa2 S4 :Ce/ZnS:Mn/SrS:Ce obtained by superimposing a ZnS:Mn/SrS:Ce spectrum and a CaGa2 S4 :Ce emission spectrum, both of which were measured under the same frequency, pulse width and drive voltage above threshold. The relative intensities of the emission at selected wavelengths in the blue region are listed in Table 1. The CIE coordinates for the unfiltered white light emission of CaGa2 S4 :Ce/ZnS:Mn/SrS:Ce are x=0.39, y=0.44.

              TABLE 1______________________________________         CaGa2 S4 :Ce/ZnS:Mn/SrS:CeWavelength    Relative Intensity______________________________________450 nm        13%460 nm        23%470 nm        36%480 nm        41%______________________________________

As shown in Table 1, a white light-emitting multilayer phosphor of the present invention, CaGa2 S4 :Ce/ZnS:Mn/SrS:Ce, exhibits significant emission intensity in the blue region of the spectrum.

The unfiltered emission spectrum of a single stack of the multilayer phosphor material represented by the formula ZnS/Ca0.5 Sr0.5 Ga2 S4 :Ce/ZnS:Mn is shown in FIG. 9. The relative intensities of the emissions in the red, blue and green regions of the spectrum for the same phosphor material as viewed through red, green and blue filters are also shown in FIG. 9. FIG. 10 shows the CIE 1931 chromaticity diagram showing the color gamut available from the multilayer phosphor material represented by the formula ZnS/Sr0.5 Ca0.5 Ga2 S4 :Ce/ZnS:Mn. The CIE coordinates for the unfiltered phosphor material are x=0.54, y=0.42. For comparison, the dashed lines in FIG. 10 show the color gamut available from the phosphor represented by the formula ZnS:Mn/SrS:Ce.

Referring now to FIG. 11, a preferred embodiment of the present invention is a single stack 80 of the multilayer white light emitting phosphor having improved emission intensity in the blue region of the spectrum consisting of a red light-emitting zinc sulfide layer 82 including the dopant manganese, represented by the formula ZnS:Mn, a blue-green light-emitting cerium doped strontium sulfide layer 84, represented by the formula SrS:Ce, and a blue light-emitting cerium activated calcium thiogallate phosphor 86, represented by the formula CaGa2 S4 :Ce.

To prepare the stack 80, first the red light-emitting manganese doped zinc sulfide phosphor 82, ZnS:Mn, is deposited in a layer 150 to 300 nm thick. The blue-green light-emitting cerium doped strontium sulfide phosphor layer 84, SrS:Ce, is deposited in a layer 600 to 1200 nm thick atop the manganese doped zinc sulfide layer. Finally, the blue light-emitting cerium activated calcium thiogallate phosphor 86, CaGa2 S4 :Ce, is deposited in a layer 200 to 400 nm thick. Each phosphor layer preferably is deposited by the vacuum deposition technique of sputtering.

The terms and expressions which have been employed in the foregoing specification are used therein as terms of description and not of limitation, and there is no intention, in the use of such terms and expressions, of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined and limited only by the claims which follow.

Citations de brevets
Brevet cité Date de dépôt Date de publication Déposant Titre
US3639254 *1 juil. 19691 févr. 1972Gte Laboratories IncAlkaline earth thiogallate phosphors
US4983469 *17 févr. 19898 janv. 1991Nippon Soken, Inc.High tone white light
US5147835 *5 mars 199115 sept. 1992Motorola, Inc.Compaction, sintering
US5309070 *12 mars 19913 mai 1994Sun Sey ShingAlternating current thin film electroluminescent device, blue phosphor
US5346776 *19 mars 199213 sept. 1994Sharp Kabushiki KaishaElectroluminescent panel
Citations hors brevets
Référence
1Barrow, et al., "A New Class of Blue TFEL Phosphors With Application to a VGA Full-Color Display," SID 93 Digest, pp. 761-764.
2 *Barrow, et al., A New Class of Blue TFEL Phosphors With Application to a VGA Full Color Display, SID 93 Digest, pp. 761 764.
3King, et al., "Full-Color 320×240 TFEL Display Panel," pp. 14-17.
4 *King, et al., Full Color 320 240 TFEL Display Panel, pp. 14 17.
5Leppanen, et al., "Broadband Double Layer Phosphor for an Inverted Filtered RGB Electroluminescent Display," (four pages of material, no page numbers or other identification).
6 *Leppanen, et al., Broadband Double Layer Phosphor for an Inverted Filtered RGB Electroluminescent Display, (four pages of material, no page numbers or other identification).
7Mauch, et al. "ZnS:Mn/SrS:Ce Multilayer Devices for Full-Color EL Applications", SID 93 Digest, pp. 769-772.
8 *Mauch, et al. ZnS:Mn/SrS:Ce Multilayer Devices for Full Color EL Applications , SID 93 Digest, pp. 769 772.
9Nire, et al., "Multi-Color TFEL Display Panel with Double-Hetero-Interface Structured Active Layer," (four pages printed material, no page numbers or other identification).
10 *Nire, et al., Multi Color TFEL Display Panel with Double Hetero Interface Structured Active Layer, (four pages printed material, no page numbers or other identification).
11Ono, et al. "White-Light Emitting Thin Film Electroluminescent Devices With Stacked SrS:Ce/CaS:Eu active Layers," J. Appl. Phys. 66(11), 1 Dec. 1989, pp. 5564-5570.
12 *Ono, et al. White Light Emitting Thin Film Electroluminescent Devices With Stacked SrS:Ce/CaS:Eu active Layers, J. Appl. Phys. 66(11), 1 Dec. 1989, pp. 5564 5570.
13Tanaka, et al. "Bright White-Light Electroluminescence Based on Nonradiative Energy Transfer In Ce- and Eu-doped SrS Thin Films", Appl. Phys. Lett. vol. 51, No. 21, 23 Nov. 1987, pp. 1661-1663.
14Tanaka, et al. "White Light Emitting Thin-Film Electroluminescent Devices With SrS:Ce,Cl/ZnS:Mn Double Phosphor Layers," Japanese Journal of Applied Physics, vol. 25, No. 3, Mar. 1986, pp. L225-L227.
15 *Tanaka, et al. Bright White Light Electroluminescence Based on Nonradiative Energy Transfer In Ce and Eu doped SrS Thin Films , Appl. Phys. Lett. vol. 51, No. 21, 23 Nov. 1987, pp. 1661 1663.
16 *Tanaka, et al. White Light Emitting Thin Film Electroluminescent Devices With SrS:Ce,Cl/ZnS:Mn Double Phosphor Layers, Japanese Journal of Applied Physics, vol. 25, No. 3, Mar. 1986, pp. L225 L227.
17Tanaka, et al., "Stable White SrS:Ce,K,Eu TFEL with Filters for Full-Color Devices," SID 89 Digest, pp. 321-324.
18 *Tanaka, et al., Stable White SrS:Ce,K,Eu TFEL with Filters for Full Color Devices, SID 89 Digest, pp. 321 324.
Référencé par
Brevet citant Date de dépôt Date de publication Déposant Titre
US5703436 *6 mars 199630 déc. 1997The Trustees Of Princeton UniversityTransparent contacts for organic devices
US5780966 *19 avr. 199614 juil. 1998Nippondenso Co., Ltd.Luminescent layer is made of cerium doped calcium thiogallate, used for displaying
US5892333 *31 oct. 19966 avr. 1999Denso CorporationElectroluminescent device and method for producing the same
US5932327 *8 févr. 19963 août 1999Nippondenso Co., Ltd.Electroluminescent element
US5986628 *14 mai 199716 nov. 1999Planar Systems, Inc.Field sequential color AMEL display
US6025677 *11 avr. 199715 févr. 2000The Regents Of The University Of CaliforniaBlue light emitting thiogallate phosphor including a thin nucleation layer of strontium sulfide
US6053795 *13 janv. 199825 avr. 20003M Innovative Properties CompanyToy having image mode and changed image mode
US6074575 *24 mars 199813 juin 2000Mitsui Mining & Smelting Co., Ltd.Thin film electro-luminescence device
US6120026 *13 janv. 199819 sept. 20003M Innovative Properties Co.Game with privacy material
US621153810 nov. 19983 avr. 2001Korea Institute Of Industrial Tech.Electroluminescent device including a blue light emitting thick-film electroluminescent layer and a red light emitting thin-film electroluminescent layer
US6242858 *14 sept. 19985 juin 2001Planar Systems, Inc.Light emitting (blue) phosphor material comprising group 2a sulfides doped with copper and silver (sandwiched between dielectric layers) for alternating current thin-film electroluminescent device
US625474013 avr. 19983 juil. 2001Nippondenso Co., Ltd.Sputtering method of producing and electroluminescent device with improved blue color purity
US626480510 juin 199724 juil. 2001The Trustees Of Princeton UniversityMethod of fabricating transparent contacts for organic devices
US63374928 mai 19988 janv. 2002Emagin CorporationSerially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer
US63586316 août 199619 mars 2002The Trustees Of Princeton UniversityMixed vapor deposited films for electroluminescent devices
US6358632 *10 nov. 199819 mars 2002Planar Systems, Inc.TFEL devices having insulating layers
US63652709 déc. 19992 avr. 2002The Trustees Of Princeton UniversityOrganic light emitting devices
US641443912 mars 20012 juil. 2002Planar Systems, Inc.AMEL device with improved optical properties
US64514608 sept. 200017 sept. 2002Planner Systems, Inc.Thin film electroluminescent device
US645514013 janv. 199924 sept. 20023M Innovative Properties CompanyVisible mirror film glitter
US647560913 janv. 19995 nov. 20023M Innovative Properties CompanyGlitter
US65043128 févr. 20017 janv. 2003Planar Systems, Inc.AMEL device with improved optical properties
US65489561 déc. 200015 avr. 2003The Trustees Of Princeton UniversityTransparent contacts for organic devices
US659613421 déc. 199922 juil. 2003The Trustees Of Princeton UniversityMethod of fabricating transparent contacts for organic devices
US6603257 *26 mai 20005 août 2003University Of North Carolina At CharlotteCathodo-/electro-luminescent device and method of fabricating a cathodo-/electro-luminescent device using porous silicon/porous silicon carbide as an electron emitter
US673446919 nov. 200111 mai 2004Tdk CorporationElectroluminescence (el); high luminance; phosphor is an alkaline earth thioaluminate, thiogallate or thioindate as a main component, with rare earth element and as dielectric a group 2a or titanium-containing oxide
US676436816 avr. 200320 juil. 2004University Of North Carolina At CharlotteEmbodied in a flat panel display that exhibits the efficiency of cathodoluminescence but does not require intractable mechanical structures to distally dispose an anodic plate from a needle-like cold cathode
US677101931 mars 20003 août 2004Ifire Technology, Inc.Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties
US679396230 mai 200121 sept. 2004Tdk CorporationEL phosphor multilayer thin film and EL device
US6911960 *29 nov. 199928 juin 2005Sanyo Electric Co., Ltd.Active-type electroluminescent display
US691968220 mai 200319 juil. 2005Ifire Technology Inc.Magnesium barium thioaluminate and related phosphor materials
US693918914 août 20036 sept. 2005Ifire Technology Corp.Method of forming a patterned phosphor structure for an electroluminescent laminate
US700163930 avr. 200221 févr. 2006Lumimove, Inc.Electroluminescent devices fabricated with encapsulated light emitting polymer particles
US702976329 juil. 200218 avr. 2006Lumimove, Inc.Light-emitting phosphor particles and electroluminescent devices employing same
US712963312 sept. 200331 oct. 2006Ifire Technology Inc.Silicon oxynitride passivated rare earth activated thioaluminate phosphors for electroluminescent displays
US717336911 juin 20036 févr. 2007The Trustees Of Princeton UniversityTransparent contacts for organic devices
US73038271 févr. 20064 déc. 2007Lumimove, Inc.Light-emitting phosphor particles and electroluminescent devices employing same
US7332860 *30 mars 200619 févr. 2008Eastman Kodak CompanyEfficient white-light OLED display with filters
US736141328 janv. 200322 avr. 2008Lumimove, Inc.Electroluminescent device and methods for its production and use
US74274223 mai 200523 sept. 2008Ifire Technology Corp.Method of forming a thick film dielectric layer in an electroluminescent laminate
US744244615 déc. 200328 oct. 2008Ifire Ip CorporationAluminum nitride passivated phosphors for electroluminescent displays
US758625614 août 20038 sept. 2009Ifire Ip CorporationCombined substrate and dielectric layer component for use in an electroluminescent laminate
US77145042 févr. 200711 mai 2010The Trustees Of Princeton UniversityMulticolor organic electroluminescent device formed of vertically stacked light emitting devices
US781252219 juil. 200512 oct. 2010Ifire Ip CorporationAluminum oxide and aluminum oxynitride layers for use with phosphors for electroluminescent displays
US784296116 juin 200630 nov. 2010Seoul Semiconductor Co., Ltd.Red phosphor and luminous element using the same
US795932113 mars 200614 juin 2011Seoul Semiconductor Co., Ltd.Backlight panel employing white light emitting diode having red phosphor and green phosphor
US801796123 mai 200613 sept. 2011Seoul Semiconductor Co., Ltd.Light emitting device and phosphor of alkaline earth sulfide therefor
US808830223 mai 20063 janv. 2012Seoul Semiconductor Co., Ltd.white light is implemented by applying green and red phosphors to a single blue light emitting diode, so that it can have color purity with more excellent color reproducibility than that of the white light implemented by means of the blue light emitting diode and the yellow phosphor; lower cost
US813295214 oct. 201013 mars 2012Seoul Semiconductor Co., Ltd.Backlight panel employing white light emitting diode having red phosphor and green phosphor
US832352916 mars 20064 déc. 2012Seoul Semiconductor Co., Ltd.Fluorescent material and light emitting diode using the same
US83248036 avr. 20104 déc. 2012The Trustees Of Princeton UniversityTransparent contacts for organic devices
EP1001660A1 *10 nov. 199817 mai 2000CND Co., Ltd.Electroluminescent device and manufacturing method thereof
EP1018168A1 *6 juil. 199812 juil. 2000Fed CorporationHigh brightness, high efficiency organic light emitting device
EP1207722A2 *6 juil. 200122 mai 2002TDK CorporationEL phosphor multilayer thin film and el device
EP1471774A2 *12 mai 200027 oct. 2004iFire Technology Inc.Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties
EP1753270A1 *14 août 200614 févr. 2007Samsung SDI Co., Ltd.White electroluminescent device and method of producing the same
WO1997033296A1 *15 févr. 199712 sept. 1997Univ PrincetonTransparent contacts for organic devices
WO2007116850A126 mars 200718 oct. 2007Toyoda Gosei KkFerrous-metal-alkaline-earth-metal silicate mixed crystal phosphor and light emitting device using the same
WO2008077539A1 *18 déc. 20073 juil. 2008Amboina AgElectroluminescent lamp and method for the production thereof
WO2013169364A1 *14 mars 201314 nov. 2013Ut-Battelle, LlcMethod of microbially producing metal gallate spinel nano-objects, and compositions produced thereby
Classifications
Classification aux États-Unis313/509, 313/503, 313/506
Classification internationaleC09K11/77, C09K11/57, H05B33/10, H05B33/14
Classification coopérativeH05B33/14, C09K11/574, Y02B20/181, C09K11/7718, H05B33/10
Classification européenneH05B33/14, C09K11/77M2D, H05B33/10, C09K11/57B2
Événements juridiques
DateCodeÉvénementDescription
10 mai 2013ASAssignment
Owner name: BENEQ OY, FINLAND
Effective date: 20121211
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PLANAR SYSTEMS, INC.;REEL/FRAME:030393/0040
28 nov. 2012ASAssignment
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SUN, SEY-SHING;TUENGE, RICHARD T.;REEL/FRAME:029363/0358
Effective date: 19940316
Owner name: PLANAR SYSTEMS, INC., OREGON
11 mars 2008FPAYFee payment
Year of fee payment: 12
28 sept. 2007ASAssignment
Owner name: BANK OF AMERICA, N.A., CALIFORNIA
Free format text: SECURITY AGREEMENT;ASSIGNOR:PLANAR SYSTEMS, INC.;REEL/FRAME:019892/0957
Effective date: 20070629
9 nov. 2004SULPSurcharge for late payment
Year of fee payment: 7
9 nov. 2004FPAYFee payment
Year of fee payment: 8
18 août 2004REMIMaintenance fee reminder mailed
14 juil. 2000FPAYFee payment
Year of fee payment: 4
21 juil. 1998CCCertificate of correction