US5950645A - Semiconductor wafer cleaning system - Google Patents
Semiconductor wafer cleaning system Download PDFInfo
- Publication number
- US5950645A US5950645A US08/910,033 US91003397A US5950645A US 5950645 A US5950645 A US 5950645A US 91003397 A US91003397 A US 91003397A US 5950645 A US5950645 A US 5950645A
- Authority
- US
- United States
- Prior art keywords
- tank
- wafers
- water
- cleaning
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims abstract description 182
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 138
- 239000000126 substance Substances 0.000 claims abstract description 70
- 239000004094 surface-active agent Substances 0.000 claims abstract description 43
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000008367 deionised water Substances 0.000 claims abstract description 30
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 30
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 11
- 238000005507 spraying Methods 0.000 claims abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000007921 spray Substances 0.000 claims description 17
- 238000011049 filling Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 229910017900 NH4 F Inorganic materials 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 26
- 239000008237 rinsing water Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 122
- 239000000243 solution Substances 0.000 description 85
- 230000008569 process Effects 0.000 description 73
- 239000002245 particle Substances 0.000 description 36
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 32
- 238000012360 testing method Methods 0.000 description 29
- 239000007788 liquid Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 150000002739 metals Chemical class 0.000 description 22
- 239000000203 mixture Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 238000011109 contamination Methods 0.000 description 15
- 230000007547 defect Effects 0.000 description 15
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000011282 treatment Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000000356 contaminant Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000013459 approach Methods 0.000 description 7
- 241000252506 Characiformes Species 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 TeflonĀ® Polymers 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 241001427367 Gardena Species 0.000 description 1
- 229910003556 H2 SO4 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004401 flow injection analysis Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000009428 plumbing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- C11D2111/22—
-
- C11D2111/46—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Abstract
Description
______________________________________ Metal Na Al Cr Fe Ni Cu Zn ______________________________________ Detection Limit <10 <5 <1 <5 <0.3 <1.5 <2 (1) Control <10 <5 <1 <5 .4 1.7 3 (2) SC-1/SC-2 20 <5 <1 <5 .6 2.6 <2 (3) VcS (Vc 1-4) 11 <5 <1 <5 .4 1.8 <2 (4) SC-1 (Contam.) 16 >1000 <1 74 28 130 14 (5) SC-1/SC-2 <10 <5 <1 <5 1.5 36 <2 (6) VcS (Vc 1-4) 10.4 <5 <1 <5 <0.3 1.5 2.3 (7) VcS (Vc 1-3) 24 5.6 1.1 5.3 .48 1.5 3.7 ______________________________________
______________________________________ Chemical Consumption Dollars ______________________________________ Traditional System DI rinse water 603,000 HF 260,000 H.sub.2 O.sub.2 205,000 NH.sub.4 OH 46,000 HCl 68,000 H.sub.2 SO.sub.4 150,000 TOTAL 1,332,000 VcS SYSTEM DI rinse water 165,000 Vc1 32,000 Vc2 2,000 Vc3 73,000 Vc4 14,000 TOTAL 286,000 ______________________________________
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/910,033 US5950645A (en) | 1993-10-20 | 1997-08-11 | Semiconductor wafer cleaning system |
US09/358,568 US6158445A (en) | 1993-10-20 | 1999-07-20 | Semiconductor wafer cleaning method |
US09/694,938 US6378534B1 (en) | 1993-10-20 | 2000-10-23 | Semiconductor wafer cleaning system |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14029093A | 1993-10-20 | 1993-10-20 | |
US08/361,139 US5656097A (en) | 1993-10-20 | 1994-12-21 | Semiconductor wafer cleaning system |
US08/910,033 US5950645A (en) | 1993-10-20 | 1997-08-11 | Semiconductor wafer cleaning system |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/361,139 Continuation-In-Part US5656097A (en) | 1993-10-20 | 1994-12-21 | Semiconductor wafer cleaning system |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/358,568 Division US6158445A (en) | 1993-10-20 | 1999-07-20 | Semiconductor wafer cleaning method |
Publications (1)
Publication Number | Publication Date |
---|---|
US5950645A true US5950645A (en) | 1999-09-14 |
Family
ID=27385474
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/910,033 Expired - Lifetime US5950645A (en) | 1993-10-20 | 1997-08-11 | Semiconductor wafer cleaning system |
US09/358,568 Expired - Fee Related US6158445A (en) | 1993-10-20 | 1999-07-20 | Semiconductor wafer cleaning method |
US09/694,938 Expired - Lifetime US6378534B1 (en) | 1993-10-20 | 2000-10-23 | Semiconductor wafer cleaning system |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/358,568 Expired - Fee Related US6158445A (en) | 1993-10-20 | 1999-07-20 | Semiconductor wafer cleaning method |
US09/694,938 Expired - Lifetime US6378534B1 (en) | 1993-10-20 | 2000-10-23 | Semiconductor wafer cleaning system |
Country Status (1)
Country | Link |
---|---|
US (3) | US5950645A (en) |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6026830A (en) * | 1997-03-28 | 2000-02-22 | Taiwan Semiconductor Manufacturing Company | Post-CMP cleaner apparatus and method |
US6136613A (en) * | 1998-04-21 | 2000-10-24 | United Silicon Incorporated | Method for recycling monitoring control wafers |
US6158447A (en) * | 1997-09-09 | 2000-12-12 | Tokyo Electron Limited | Cleaning method and cleaning equipment |
DE10010583A1 (en) * | 2000-03-03 | 2001-09-06 | Atmel Germany Gmbh | Process for structuring and cleaning partially silicided silicon wafers comprises structuring the wafers in a solution containing ammonia and hydrogen peroxide, and cleaning the wafers |
US6308369B1 (en) | 1998-02-04 | 2001-10-30 | Silikinetic Technology, Inc. | Wafer cleaning system |
US6360756B1 (en) * | 1999-06-03 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd | Wafer rinse tank for metal etching and method for using |
US6378534B1 (en) | 1993-10-20 | 2002-04-30 | Verteq, Inc. | Semiconductor wafer cleaning system |
US20020174879A1 (en) * | 2001-04-30 | 2002-11-28 | Chung-Tai Chen | Method for cleaning a semiconductor wafer |
US20020189638A1 (en) * | 2001-06-15 | 2002-12-19 | Luscher Paul E. | Configurable single substrate wet-dry integrated cluster cleaner |
US6514355B1 (en) * | 1999-02-08 | 2003-02-04 | International Business Machines Corporation | Method and apparatus for recovery of semiconductor wafers from a chemical tank |
US6539952B2 (en) | 2000-04-25 | 2003-04-01 | Solid State Equipment Corp. | Megasonic treatment apparatus |
US6573141B1 (en) * | 1999-03-12 | 2003-06-03 | Zilog, Inc. | In-situ etch and pre-clean for high quality thin oxides |
US6584989B2 (en) | 2001-04-17 | 2003-07-01 | International Business Machines Corporation | Apparatus and method for wet cleaning |
US6589361B2 (en) | 2000-06-16 | 2003-07-08 | Applied Materials Inc. | Configurable single substrate wet-dry integrated cluster cleaner |
US20030144163A1 (en) * | 2001-11-16 | 2003-07-31 | Mitsubishi Chemical Corporation | Substrate surface cleaning liquid mediums and cleaning method |
US6612316B2 (en) * | 2000-02-25 | 2003-09-02 | Nec Electronics Corporation | Wet processing device with sensor-controlled conveyor |
US6620743B2 (en) | 2001-03-26 | 2003-09-16 | Asm America, Inc. | Stable, oxide-free silicon surface preparation |
US20030234029A1 (en) * | 2001-07-16 | 2003-12-25 | Semitool, Inc. | Cleaning and drying a substrate |
US6681781B2 (en) * | 1999-05-13 | 2004-01-27 | Fsi International, Inc. | Methods for cleaning microelectronic substrates using ultradilute cleaning liquids |
US20040020898A1 (en) * | 2002-07-30 | 2004-02-05 | Applied Materials Israel, Inc. | Contaminant removal by laser-accelerated fluid |
US20040079389A1 (en) * | 2002-10-24 | 2004-04-29 | Yoon Il Young | Post-chemical mechanical polishing (CMP) cleaning method |
US20050048800A1 (en) * | 2003-07-31 | 2005-03-03 | Wagener Thomas J. | Controlled growth of highly uniform, oxide layers, especially ultrathin layers |
US20050072625A1 (en) * | 2003-09-11 | 2005-04-07 | Christenson Kurt K. | Acoustic diffusers for acoustic field uniformity |
US20050085076A1 (en) * | 2003-07-23 | 2005-04-21 | Nam Sang W. | Inorganic compound for removing polymers in semiconductor processes |
US20050098194A1 (en) * | 2003-09-11 | 2005-05-12 | Christenson Kurt K. | Semiconductor wafer immersion systems and treatments using modulated acoustic energy |
US20060174913A1 (en) * | 2005-02-07 | 2006-08-10 | Dong-Hoon Jung | Apparatus for and method of wet processing semiconductor substrates |
US20070062555A1 (en) * | 2005-09-22 | 2007-03-22 | Delta Electronics, Inc. | Ultrasonic cleaning system and method |
US20090007940A1 (en) * | 2007-07-04 | 2009-01-08 | Siltronic Ag | Process For Cleaning A Semiconductor Wafer Using A Cleaning Solution |
US20090042400A1 (en) * | 2005-08-23 | 2009-02-12 | Asm America, Inc. | Silicon surface preparation |
US20140216505A1 (en) * | 2012-11-15 | 2014-08-07 | Ebara Corporation | Substrate cleaning apparatus and substrate cleaning method |
US20170266699A1 (en) * | 2014-06-12 | 2017-09-21 | Shenzhen China Star Optoelectronics Technology Co. , Ltd. | Cleaning method and cleaning apparatus for a mask |
US20180281026A1 (en) * | 2017-04-03 | 2018-10-04 | Ebara Corporation | Liquid supplying device and liquid supplying method |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6039059A (en) * | 1996-09-30 | 2000-03-21 | Verteq, Inc. | Wafer cleaning system |
US6090217A (en) | 1998-12-09 | 2000-07-18 | Kittle; Paul A. | Surface treatment of semiconductor substrates |
US6338803B1 (en) * | 1999-08-30 | 2002-01-15 | Koch Microelectronic Service Co., Inc. | Process for treating waste water containing hydrofluoric acid and mixed acid etchant waste |
US6399513B1 (en) * | 1999-11-12 | 2002-06-04 | Texas Instruments Incorporated | Ozonated DI water process for organic residue and metal removal processes |
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