US6121147A - Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance - Google Patents
Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance Download PDFInfo
- Publication number
- US6121147A US6121147A US09/209,704 US20970498A US6121147A US 6121147 A US6121147 A US 6121147A US 20970498 A US20970498 A US 20970498A US 6121147 A US6121147 A US 6121147A
- Authority
- US
- United States
- Prior art keywords
- wafer
- polishing
- metallic
- reporting substance
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- the present invention relates generally to a method of detecting a polishing endpoint layer of a semiconductor wafer, and more particularly to an apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.
- Semiconductor integrated circuits are typically fabricated by a layering process in which several layers of material are fabricated on or in a surface of a wafer, or alternatively, on a surface of a previous layer. This fabrication process typically requires subsequent layers to be fabricated upon a smooth, planar surface of a previous layer.
- the surface topography of layers may be uneven due to an uneven topography associated with an underlying layer.
- a layer may need to be polished in order to present a smooth, planar surface for a subsequent processing step. For example, a layer may need to be polished prior to formation of a conductor layer or pattern on an outer surface of the layer.
- a semiconductor wafer may be polished to remove high topography and surface defects such as crystal lattice damage, scratches, roughness, or embedded particles of dirt or dust.
- the polishing process typically is accomplished with a polishing system that includes top and bottom platens (e.g. a polishing table and a wafer carrier or holder), between which the semiconductor wafer is positioned. The platens are moved relative to each other thereby causing material to be removed from the surface of the wafer.
- This polishing process is often referred to as mechanical planarization (MP) and is utilized to improve the quality and reliability of semiconductor devices.
- the polishing process may also involve the introduction of a chemical slurry to facilitate higher removal rates, along with the selective removal of materials fabricated on the semiconductor wafer. This polishing process is often referred to as chemical mechanical planarization or chemical mechanical polishing (CMP).
- a typical method employed for determining the endpoint in polishing systems is to measure the amount of time needed to planarize a first wafer, and thereafter polishing the remaining wafers for a similar amount of time.
- this method is extremely time consuming since machine operators must inspect each wafer after polishing.
- it is extremely difficult to precisely control the removal rate of material since the removal rate may vary during the polishing of an individual wafer.
- the removal rate may be diminished in the process of polishing a number of wafers in sequence.
- a method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a metallic reporting substance includes the step of polishing a first side of the wafer in order to remove material from the wafer.
- the method also includes the step of utilizing an atomic absorption technique to detect the presence of the metallic reporting substance in the material removed from the wafer.
- the method further includes the step of terminating the polishing step in response to detecting the presence of the metallic reporting substance.
- a method of planarizing a semiconductor wafer down to a distance from a semiconductor substrate of the wafer includes the step of forming in the wafer a metallic reporting substance that is at the distance from the substrate of the wafer.
- the method also includes the step of polishing a first side of the wafer in order to remove material from the wafer.
- the method further includes the step of utilizing an atomic absorption spectroscopic technique to detect the presence of the metallic reporting substance in the material removed from the wafer.
- the method includes the step of terminating the polishing step in response to the detection of the metallic reporting substance.
- an apparatus for polishing a semiconductor wafer down to a metallic reporting substance of the wafer wherein the wafer has a first side and a second side.
- the apparatus includes a polishing platen having a polishing surface.
- the apparatus also includes a wafer carrier configured to (i) engage the wafer by the second side of the wafer and (ii) press the first side of the wafer against the polishing surface of the polishing platen.
- the apparatus further includes a slurry supply system configured to apply a chemical slurry to the first side of the wafer which (i) facilities removal of the metallic reporting substance from the wafer, and (ii) receives the metallic reporting substance removed from the wafer, wherein the polishing platen and the wafer carrier are configured to rub the first side of the wafer against the polishing surface in the presence of the chemical slurry in order to remove the metallic reporting substance from the wafer.
- the apparatus also includes a polishing endpoint detector that (i) utilizes an atomic absorption spectroscopic technique to detect the presence of the metallic reporting substance in the material removed from the wafer, and (ii) is operable so as to cause the polishing of the wafer to terminate in response to detecting the presence of the metallic reporting substance.
- FIGS. 1A-1E show sectional views of a semiconductor wafer during various steps of a fabrication process
- FIG. 2 shows an embodiment of a polishing system which incorporates various features of the present invention therein;
- FIG. 3 shows a flowchart of a polishing procedure used by the polishing system of FIG. 2.
- FIGS. 1A-1E there is shown a semiconductor wafer 10 after various steps of a fabrication process of the present invention.
- FIGS. 1A and 1B show the semiconductor wafer 10 after a number of fabrication steps.
- the semiconductor wafer 10 includes a semiconductor substrate 12, such as silicon.
- a first insulating layer 14 is deposited or otherwise disposed on the semiconductor substrate 12.
- the fabrication process deposits an insulating material, such as silicon nitride, over the substrate 12 as shown in FIG. 1A.
- trenches 22 are etched or otherwise formed in the semiconductor wafer 12.
- the trenches 22 may be formed by first applying a photo-resist or other type of etching mask to the desired areas of the semiconductor wafer 10 and thereafter chemically etching the unmasked areas of the first insulating layer 14 and the substrate 12.
- etching masks and techniques for use thereof are commonly known in the art.
- the material associated with the polishing endpoint layer 20 preferably includes a metallic reporting substance.
- a metallic reporting substance is a material which includes a metallic element that is distinguishable from a nonmetallic element by their respective positions in a periodic table (or chart).
- metallic elements are located on the left side and nonmetallic elements are located on the right side of a line which divides the periodic table into the metallic and nonmetallic elements.
- metallic elements are distinguishable from nonmetallic elements by the luster, electrical conductivity, and malleability of the metallic element as compared to a nonmetallic element.
- a metallic element is distinguishable from a nonmetallic element by the ability of the metallic element to form positive ions.
- the polishing endpoint layer 20 may include metallic elements such as tungsten, aluminum, titanium, copper, lead, iron, gold, silver, or any other metallic element capable of being detected by atomic absorption spectroscopy.
- the polishing endpoint layer 20 may be deposited on the semiconductor wafer 10 with any one of a number of know techniques. For example, once the trenches 22 have been formed in the semiconductor wafer 10, the wafer 10 is typically chemically cleaned in order to remove any residual photo-resist from the etching process. By selecting a chemical which includes a metallic reporting substance, the polishing endpoint layer 20 may be deposited on the first insulating layer 14 via wet chemistry deposition.
- a second insulating layer 24 is deposited on the semiconductor wafer 10.
- the second insulating layer 24 is deposited on the polishing endpoint layer 20 and the first insulating layer 14. Deposition of the second insulating layer 24 also causes the trenches 22 to be filled with the material of the second insulating layer 24.
- the material of the second insulating layer is a glass such as silicon dioxide.
- a polishing system such as a polishing system 30 of FIG. 2, polishes the second insulating layer 24 down to the polishing endpoint layer 20 thereby planarizing the surface of the second insulating layer 24.
- planarization of the second insulating layer 24 facilitates subsequent processes associated with fabrication of the semiconductor wafer 10.
- the polishing system 30 includes a platen motor or other drive mechanism 40 and a platen assembly 42.
- the platen motor 40 rotates the platen assembly 42 about a center axis 44.
- the platen motor 40 may rotate the platen assembly 42 in a clockwise direction (as shown by arrow 46 of FIG. 2) or in the counterclockwise direction.
- the platen assembly 42 includes a polishing platen 48 and a polishing pad 50 mounted on the polishing platen 48. Both the polishing platen 48 and the polishing pad 50 are preferably circular and collectively define a polishing area or surface against which the front side 38 of the semiconductor wafer 10 may be polished. Moreover, the polishing pad 50 is typically made of blown polyurethane which protects the polishing platen 48 from chemical slurry and other chemicals introduced during the polishing process.
- the polishing system 30 also includes a polishing head assembly 52.
- the polishing head assembly 52 includes a wafer carrier 54, a cooling mechanism 56, a wafer carrier motor or other drive mechanism 58, and a wafer carrier displacement mechanism 60.
- the wafer carrier 54 applies a controlled, adjustable force in the general direction of arrow 62 in order to press the front side 38 of the semiconductor wafer 10 into contact with the polishing pad 50 so as to facilitate polishing of the front side 38 of the semiconductor wafer 10.
- the wafer carrier motor 58 rotates the wafer carrier 54 and the semiconductor wafer 10 about a center axis 64.
- the wafer carrier motor 58 may rotate the wafer carrier 54 in a clockwise direction (as shown by arrow 66 of FIG. 2) or in the counterclockwise direction.
- the wafer carrier motor 58 preferably rotates the wafer carrier 54 in the same rotational direction as the platen motor 40 rotates the platen assembly 42 (although the wafer carrier motor 58 may rotate the semiconductor wafer 10 in the rotational direction opposite the rotational direction of the platen assembly 42 as desired).
- the wafer carrier 54 also includes mechanisms (not shown) for holding the semiconductor wafer 10.
- the wafer carrier 54 may include a vacuum-type mechanism which generates a vacuum force that draws the semiconductor wafer 10 against the wafer carrier 54. Once the semiconductor wafer 10 is positioned on the wafer carrier 54 and held in contact with the platen assembly 42 for polishing, the vacuum force may be removed.
- the wafer carrier 54 may be designed with a friction surface or a carrier pad which engages a back side 70 of the semiconductor wafer 10.
- Such a carrier pad along with the force being applied in the general direction of arrow 62, creates a frictional force between the wafer carrier 54 and the semiconductor wafer 10 that effectively holds the semiconductor wafer 10 against the wafer carrier 54 thereby causing the semiconductor wafer 10 to rotate at the same velocity as the wafer carrier 54. It should be appreciated that such wafer carriers and carrier pads are of conventional design and are commercially available.
- the cooling mechanism 56 counteracts heat generated during the polishing process in order to maintain the wafer carrier 54 at a substantially constant temperature.
- the cooling mechanism 56 neutralizes the heat generated due to friction and a chemical slurry reacting with the front side 38 of the semiconductor wafer 10.
- the displacement mechanism 60 selectively moves the wafer carrier 54 and hence the semiconductor wafer 10 across the platen assembly 42 in the general direction of arrows 68 and 98. Such movement defines a polishing path which may be linear, sinusoidal, or a variety of other patterns.
- the wafer carrier displacement mechanism 60 is also capable of moving the semiconductor wafer 10 along a polishing path to a location beyond the edge of the polishing pad 50 so that the semiconductor wafer 10 "overhangs" the edge. Such an overhanging arrangement permits the semiconductor wafer 10 to be moved partially on and partially off the polishing pad 50 to compensate for polishing irregularities caused by a relative velocity differential between the faster moving outer portions and the slower moving inner portions of the platen assembly 42.
- the polishing system 30 also includes a chemical slurry system 72.
- the slurry system 72 includes a slurry storage reservoir 74, a slurry flow control mechanism 76, and a slurry conduit 78.
- the slurry storage reservoir 74 includes one or more containers for storing slurry.
- the slurry storage reservoir 74 contains a chemical slurry that includes abrasive material which facilitates polishing of the front side 38 of the semiconductor wafer 10. Chemical slurries having such properties are well known and commercially available.
- the slurry flow control mechanism 76 controls the flow of slurry from the slurry storage 74, through the slurry conduit 78, and onto the polishing area atop the platen assembly 42. Hence, the slurry flow control mechanism 76 and the slurry conduit 78 selectively introduce a flow of slurry (as indicated by arrow 80) atop the polishing pad 50.
- the polishing system 30 also includes an endpoint detection system 150.
- the endpoint detection system 150 includes an extraction conduit 152, an extraction flow control mechanism 154, a filter mechanism 156, a nebulizer 158, an analyzer 160, and a waste conduit 162.
- the extraction conduit 152 receives effluent from the polishing area atop platen assembly 42.
- the effluent may include the chemical slurry from the slurry supply system 72 and materials removed from the semiconductor wafer 10.
- the extraction flow control mechanism 154 controls the flow of effluent from the extraction conduit 152 to the filter mechanism 156, the nebulizer 158, and thereafter the analyzer 160.
- the filter mechanism 156 includes a membrane which filters various known and unknown solids from the effluent flow in order to prevent such solids from reaching the nebulizer 158.
- the membrane of the extraction flow control mechanism 154 has a pore size that is slightly smaller than the alumina included in the chemical slurry.
- the nebulizer 158 is provided to convert the effluent into a suitable medium for presentation to the analyzer 160.
- the nebulizer 158 converts the effluent from a liquid to a fine spray or otherwise atomizes the effluent prior to introduction of the same into the analyzer 160.
- the waste conduit 162 of the endpoint detection system 150 connects the analyzer 160 to a waste treatment facility (not shown) in order to chemically treat or otherwise properly dispose of the effluent subsequent to analyzation thereof.
- the analyzer 160 is operable to analyze the effluent and generate an endpoint detection signal when the effluent has a particular characteristic that is indicative of the polishing endpoint layer 20 being reached. To this end, the analyzer 160 is operable to determine whether the effluent from the polishing area atop platen assembly 42 includes detectable amounts of the metallic reporting substance of polishing endpoint layer 20. For example, in the case of when the metallic reporting substance of polishing endpoint layer 20 includes tungsten, the analyzer 160 is operable to detect the presence of tungsten in the effluent from the polishing area atop platen assembly 42.
- analyzer 160 utilizes an atomic absorption spectroscopic technique to detect the presence of the metallic reporting substance in the effluent from the polishing area atop platen assembly 42. More preferably, analyzer 160 includes a flame atomic absorption spectrometer or a flameless atomic absorption spectrometer for determining the presence of the metallic reporting substance in the effluent from the polishing area atop platen assembly 42.
- Atomic absorption spectroscopy techniques which utilize the above described atomic absorption spectrometers are well known in the art. Accordingly, atomic absorption spectroscopy techniques are not described herein.
- the polishing system 30 also includes a controller 82 for controlling the polishing system 30 in order to effectuate the desired polishing results for the semiconductor wafer 10.
- the controller 82 is electrically coupled to the displacement mechanism 60 via a signal line 84 to monitor and controllably adjust the polishing path of the semiconductor wafer 10 and the speed at which the semiconductor wafer 10 is moved across the platen assembly 42.
- controller 82 is electrically coupled to the platen motor 40 via a signal line 86 in order to monitor the output speed of the platen motor 40 and hence the rotational velocity of the platen assembly 42.
- the controller 82 adjusts the output speed of the platen motor 40 and hence the rotational velocity of the platen assembly 42 as required by predetermined operating parameters.
- the controller 82 is electrically coupled to the slurry flow control mechanism 76 via a signal line 88 in order to monitor the flow rate of the chemical slurry onto the polishing pad 50 of the platen assembly 42.
- the controller 82 adjusts the flow rate of the chemical slurry onto the polishing pad 50 of the platen assembly 42 as required by predetermined operating parameters.
- the controller 82 is electrically coupled to the wafer carrier motor 58 via a signal line 90 in order to monitor the output speed of the wafer carrier motor 58 and hence the rotational velocity of the wafer carrier 54.
- the controller 82 adjusts the output speed of the wafer carrier motor 58 and hence the rotational velocity of the wafer carrier 54 as required by predetermined operating parameters.
- the controller 82 is electrically coupled to the extraction flow control mechanism 154 via a signal line 92 in order to monitor the flow rate of the effluent from the polishing area of the platen assembly 42 to the filter mechanism 156 (and hence the nebulizer 158 and the analyzer 160). The controller 82 adjusts the flow rate of the effluent from the polishing area of the platen assembly 42 as required by predetermined operating parameters.
- the controller 82 is also electrically coupled to the analyzer 160 of the endpoint detection system 150 via a signal line 94 to monitor the endpoint detection signal generated by the analyzer 160.
- the analyzer 160 can generate an endpoint detection signal which is communicated to the controller 82 via the signal line 94.
- analyzer 160 is also operable to detect a change in the concentration of the metallic reporting substance in the effluent removed from atop platen assembly 42. Having analyzer 160 operable to detect a change in the concentration of the metallic reporting substance is advantageous because as semiconductor wafer 10 is polished down to the polishing end point layer 20 the concentration of metallic reporting substance in the effluent removed from atop platen assembly 42 will initially increase to a maximum, and then begin to decrease as the polishing end point layer 20 is gradually removed from semiconductor wafer 10. Therefore, the analyzer 160 can be programmed so as to generate the endpoint detection signal based upon a predetermined change in the concentration of the metallic reporting substance.
- the analyzer 160 can be programmed to generate the end point detection signal when the analyzer 160 detects a decrease in the concentration (or a disappearance) of the metallic reporting substance in the effluent removed from atop platen assembly 42. Generating the end point detection signal when the analyzer 160 detects a decrease in the concentration of the metallic reporting substance allows the polishing process to proceed for a longer period of time, and therefore results in a greater proportion of the polishing end point layer 20 being removed from the semiconductor wafer 10.
- the analyzer 160 can be programmed to generate the end point detection signal when the analyzer 160 detects an increase in the concentration of the metallic reporting substance in the effluent removed from atop platen assembly 42. Generating the end point detection signal when the analyzer 160 detects an increase in the concentration of the metallic reporting substance shortens the time the polishing process is allowed to proceed, and therefore results in a smaller proportion of the polishing end point layer 20 being removed from the semiconductor wafer 10. Either one of these alternatives may be advantageous depending upon the circumstances, e.g. the type of semiconductor being polished or the process being used to fabricate the semiconductor.
- the polishing system 30 polishes the semiconductor wafer 10 in order to planarize the front side 38 thereof.
- the polishing system 30 removes material from the front side 38 of the semiconductor wafer 10 until the wafer 10 is polished down to the polishing endpoint layer 20.
- the wafer carrier 54 engages the back side 70 of the semiconductor wafer 10 and presses the front side 38 of the semiconductor wafer 10 against the polishing pad 50.
- the controller 82 then causes the platen motor 40 to rotate the platen assembly 42 and the wafer carrier motor 58 to rotate the wafer carriers 54.
- the controller 82 may also begin to control the displacement mechanism 60 so as to move the wafer carrier 54 along a predetermined polishing path.
- the slurry flow control mechanism 76 is also controlled by the controller 82 in order to apply chemical slurry to the polishing pad 50 at a predetermined flow rate.
- the resulting complex movement of the wafer carrier 54 relative to the polishing pad 50, the force being applied to the semiconductor wafer 10 in the general direction of arrow 62 of FIG. 2, and the chemical slurry all cooperate to selectively remove material from the front side 38 of the semiconductor wafer 10.
- controller 82 causes the extraction flow control mechanism 154 to extract effluent from the polishing area of the platen assembly 42 thereby causing effluent to flow through the filter mechanism 156 and into the nebulizer 158.
- the liquid effluent is then converted to a fine spray or otherwise atomized by the nebulizer 158 and advanced into the analyzer 160 of the endpoint detection system 150.
- the analyzer 160 generates an endpoint detection signal once the analyzer 160 detects the presence of the metallic reporting substance associated with the polishing endpoint layer 20.
- analyzer 160 can also be programmed to generate an endpoint detection signal once the analyzer 160 detects a change in the concentration of the metallic reporting substance in the effluent from the polishing area of the platen assembly 42.
- the controller 82 terminates the polishing of the semiconductor wafer 10 since the semiconductor wafer 10 has been polished down to the polishing endpoint layer 20 thereby creating a planar surface for subsequent fabrication processes.
- a polishing procedure 300 utilized by the polishing system 30 to polish the semiconductor wafer 10 according to the present invention is shown in FIG. 3.
- the polishing procedure 300 begins with step 302 in which the controller 82 causes the polishing system 30 to begin polishing the front side 38 of the semiconductor wafer 10 in order to remove material therefrom.
- the controller 82 actuates the platen motor 40 in order to cause the platen assembly 42 to be rotated.
- the controller 82 actuates the wafer carrier motor 58 thereby causing the wafer carrier 54 and hence the semiconductor wafer 10 to be rotated so as to rub the front side 38 of the semiconductor wafer 10 against the rotating platen assembly 42.
- the controller 82 also actuates the displacement mechanism 60 in order to cause the displacement mechanism 60 to selectively move the wafer carrier 54 and hence the wafer 10 along a predetermined polishing path. Moreover, the controller 82 causes the chemical slurry supply system 72 to apply chemical slurry to the polishing pad 50 of the platen assembly 42 in order to facilitate the removal of material from the front side 38 of the semiconductor wafer 10. The procedure 300 then advances to step 304.
- the controller 82 causes effluent from the polishing area of the platen assembly 42 to be advanced through to the extraction conduit 152 of the endpoint detection system 150.
- the controller 82 communicates with the slurry extractor 154 in order to provide for a flow of effluent from the polishing area of the platen assembly 42 to the endpoint detection system 150.
- the flow of effluent from the polishing area of the platen assembly 42 to the endpoint detection system 150 can be pulsed or continuous.
- the controller 82 may be programmed such that a predetermined amount of time lapses subsequent to when the wafer 10 begins to be polished prior to extracting effluent.
- the predetermined amount of time is close to, but less than, an estimated amount of time required for the polishing system 30 to reach the polishing endpoint layer 20. Waiting until the polishing system 30 is relatively close to the polishing endpoint layer 20 before extracting effluent reduces the number of samples which must be analyzed by the analyzer 160 of the endpoint detection system 150. The procedure 300 then advances to step 306.
- step 306 the controller 82 causes the extraction flow control 154 of the endpoint detection system 150 to introduce effluent extracted from the platen assembly 42 through the filter mechanism 156, the nebulizer 158, and into the analyzer 160.
- the analyzer 160 then analyzes the effluent in order to determine whether the metallic reporting substance of the polishing endpoint layer 20 is present in the effluent.
- the procedure 300 then advances to step 308.
- step 308 the controller 82 determines if the wafer 10 has been polished down to the polishing endpoint layer 20.
- the analyzer 160 detects presence of the metallic reporting substance of the polishing endpoint layer 20, the analyzer 160 generates an endpoint detection control signal which is communicated to the controller 82.
- the procedure 300 advances to step 310. If the analyzer 160 has not generated an endpoint detection control signal, the procedure 300 loops back to step 304 to extract additional effluent for introduction into the endpoint detection system 150 in the manner previously discussed.
- step 310 the controller 82 ceases polishing of the wafer 10.
- the controller 82 communicates with the platen motor 40, the wafer carrier motor 58, the displacement mechanism 60, and the slurry flow control 76 in order to cease polishing of the semiconductor wafer 10.
- the controller 82 may allow the polishing system 30 to continue polishing the semiconductor wafer 10 for a short, predetermined amount of time subsequent to generation of the endpoint detection control signal in order to further remove material from the semiconductor wafer 10. This further removal of material or overpolishing may be desirable after certain steps of a fabrication process.
- the procedure 300 then ends thereby placing the polishing system 30 in an idle state until actuated to polish a subsequent semiconductor wafer.
- polishing end point could be denoted by the reduction or disappearance of the metallic reporting substance.
- denoting the polishing end point with the reduction of the metallic reporting substance works well with the dual damascene technique of fabricating a semiconductor wafer.
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/209,704 US6121147A (en) | 1998-12-11 | 1998-12-11 | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/209,704 US6121147A (en) | 1998-12-11 | 1998-12-11 | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance |
Publications (1)
Publication Number | Publication Date |
---|---|
US6121147A true US6121147A (en) | 2000-09-19 |
Family
ID=22779915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/209,704 Expired - Lifetime US6121147A (en) | 1998-12-11 | 1998-12-11 | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance |
Country Status (1)
Country | Link |
---|---|
US (1) | US6121147A (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010044261A1 (en) * | 1999-04-26 | 2001-11-22 | Elledge Jason B. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6535779B1 (en) * | 1998-03-06 | 2003-03-18 | Applied Materials, Inc. | Apparatus and method for endpoint control and plasma monitoring |
US20030100144A1 (en) * | 2001-11-23 | 2003-05-29 | Germar Schneider | Process for chemically mechanically polishing wafers |
US6579800B2 (en) | 2001-10-12 | 2003-06-17 | Nutool, Inc. | Chemical mechanical polishing endpoint detection |
US6593154B2 (en) * | 2001-07-06 | 2003-07-15 | Mitsubishi Denki Kabushiki Kaisha | Apparatus and method for controlling semiconductor manufacturing system utilizing recycled wafers |
US6620636B2 (en) * | 2001-03-12 | 2003-09-16 | Sony Corporation | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US20030194945A1 (en) * | 2002-04-10 | 2003-10-16 | Drown Jennifer Lynne | Method and apparatus for detection of chemical mechanical planarization endpoint and device planarity |
US20050173239A1 (en) * | 2002-09-13 | 2005-08-11 | Applied Materials, Inc. | End point detection for sputtering and resputtering |
US20050224094A1 (en) * | 2004-03-31 | 2005-10-13 | Davis Randall W | Apparatus and methods for isolating bioreactive materials on a microarray substrate surface |
US8419799B2 (en) | 2003-06-25 | 2013-04-16 | Depuy Products, Inc. | Assembly tool for modular implants and associated method |
US8518050B2 (en) | 2007-10-31 | 2013-08-27 | DePuy Synthes Products, LLC | Modular taper assembly device |
US8685036B2 (en) | 2003-06-25 | 2014-04-01 | Michael C. Jones | Assembly tool for modular implants and associated method |
US8998919B2 (en) | 2003-06-25 | 2015-04-07 | DePuy Synthes Products, LLC | Assembly tool for modular implants, kit and associated method |
US9095452B2 (en) | 2010-09-01 | 2015-08-04 | DePuy Synthes Products, Inc. | Disassembly tool |
US9101495B2 (en) | 2010-06-15 | 2015-08-11 | DePuy Synthes Products, Inc. | Spiral assembly tool |
US9504578B2 (en) | 2011-04-06 | 2016-11-29 | Depuy Synthes Products, Inc | Revision hip prosthesis having an implantable distal stem component |
US9717545B2 (en) | 2007-10-30 | 2017-08-01 | DePuy Synthes Products, Inc. | Taper disengagement tool |
US20170355059A1 (en) * | 2016-06-14 | 2017-12-14 | Confluense Llc | Slurry Slip Stream Controller For CMP System |
CN115443206A (en) * | 2020-04-27 | 2022-12-06 | 柯尼卡美能达株式会社 | Grinding system |
Citations (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3734620A (en) * | 1971-04-01 | 1973-05-22 | Ibm | Multiple band atomic absorption apparatus for simultaneously measuring different physical parameters of a material |
US3748014A (en) * | 1971-12-22 | 1973-07-24 | Columbia Broadcasting Sys Inc | Near-confocal device for optical scan enhancement |
US4312732A (en) * | 1976-08-31 | 1982-01-26 | Bell Telephone Laboratories, Incorporated | Method for the optical monitoring of plasma discharge processing operations |
US4374915A (en) * | 1981-07-30 | 1983-02-22 | Intel Corporation | High contrast alignment marker for integrated circuit fabrication |
US4632724A (en) * | 1985-08-19 | 1986-12-30 | International Business Machines Corporation | Visibility enhancement of first order alignment marks |
US4689491A (en) * | 1985-04-19 | 1987-08-25 | Datasonics Corp. | Semiconductor wafer scanning system |
US4793895A (en) * | 1988-01-25 | 1988-12-27 | Ibm Corporation | In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection |
US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
US5081421A (en) * | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
US5151584A (en) * | 1988-07-20 | 1992-09-29 | Applied Materials, Inc. | Method and apparatus for endpoint detection in a semiconductor wafer etching system |
US5169491A (en) * | 1991-07-29 | 1992-12-08 | Micron Technology, Inc. | Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques |
US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US5222329A (en) * | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
US5240552A (en) * | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5242524A (en) * | 1990-05-16 | 1993-09-07 | International Business Machines Corporation | Device for detecting an end point in polishing operations |
US5245794A (en) * | 1992-04-09 | 1993-09-21 | Advanced Micro Devices, Inc. | Audio end point detector for chemical-mechanical polishing and method therefor |
US5245790A (en) * | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
US5258093A (en) * | 1992-12-21 | 1993-11-02 | Motorola, Inc. | Procss for fabricating a ferroelectric capacitor in a semiconductor device |
US5265378A (en) * | 1992-07-10 | 1993-11-30 | Lsi Logic Corporation | Detecting the endpoint of chem-mech polishing and resulting semiconductor device |
US5272115A (en) * | 1991-01-09 | 1993-12-21 | Nec Corporation | Method of leveling the laminated surface of a semiconductor substrate |
US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
US5310455A (en) * | 1992-07-10 | 1994-05-10 | Lsi Logic Corporation | Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers |
US5337015A (en) * | 1993-06-14 | 1994-08-09 | International Business Machines Corporation | In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage |
US5362669A (en) * | 1993-06-24 | 1994-11-08 | Northern Telecom Limited | Method of making integrated circuits |
US5385866A (en) * | 1994-06-22 | 1995-01-31 | International Business Machines Corporation | Polish planarizing using oxidized boron nitride as a polish stop |
US5389194A (en) * | 1993-02-05 | 1995-02-14 | Lsi Logic Corporation | Methods of cleaning semiconductor substrates after polishing |
US5399234A (en) * | 1993-09-29 | 1995-03-21 | Motorola Inc. | Acoustically regulated polishing process |
US5403228A (en) * | 1992-07-10 | 1995-04-04 | Lsi Logic Corporation | Techniques for assembling polishing pads for silicon wafer polishing |
US5405806A (en) * | 1994-03-29 | 1995-04-11 | Motorola Inc. | Method for forming a metal silicide interconnect in an integrated circuit |
US5439551A (en) * | 1994-03-02 | 1995-08-08 | Micron Technology, Inc. | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes |
US5449314A (en) * | 1994-04-25 | 1995-09-12 | Micron Technology, Inc. | Method of chimical mechanical polishing for dielectric layers |
US5483568A (en) * | 1994-11-03 | 1996-01-09 | Kabushiki Kaisha Toshiba | Pad condition and polishing rate monitor using fluorescence |
US5492594A (en) * | 1994-09-26 | 1996-02-20 | International Business Machines Corp. | Chemical-mechanical polishing tool with end point measurement station |
US5531861A (en) * | 1993-09-29 | 1996-07-02 | Motorola, Inc. | Chemical-mechanical-polishing pad cleaning process for use during the fabrication of semiconductor devices |
US5559428A (en) * | 1995-04-10 | 1996-09-24 | International Business Machines Corporation | In-situ monitoring of the change in thickness of films |
US5561541A (en) * | 1984-09-05 | 1996-10-01 | The United States Of America As Represented By The Secretary Of The Army | Frustrated total internal reflection optical power limiter |
US5595526A (en) * | 1994-11-30 | 1997-01-21 | Intel Corporation | Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate |
US5597590A (en) * | 1990-02-20 | 1997-01-28 | Nikon Corporation | Apparatus for removing a thin film layer |
US5597442A (en) * | 1995-10-16 | 1997-01-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature |
US5607341A (en) * | 1994-08-08 | 1997-03-04 | Leach; Michael A. | Method and structure for polishing a wafer during manufacture of integrated circuits |
US5609511A (en) * | 1994-04-14 | 1997-03-11 | Hitachi, Ltd. | Polishing method |
US5614446A (en) * | 1994-09-02 | 1997-03-25 | Advanced Micro Devices, Inc. | Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer |
US5626715A (en) * | 1993-02-05 | 1997-05-06 | Lsi Logic Corporation | Methods of polishing semiconductor substrates |
US5627110A (en) * | 1994-10-24 | 1997-05-06 | Advanced Micro Devices, Inc. | Method for eliminating window mask process in the fabrication of a semiconductor wafer when chemical-mechanical polish planarization is used |
US5637185A (en) * | 1995-03-30 | 1997-06-10 | Rensselaer Polytechnic Institute | Systems for performing chemical mechanical planarization and process for conducting same |
US5639388A (en) * | 1995-01-19 | 1997-06-17 | Ebara Corporation | Polishing endpoint detection method |
US5643046A (en) * | 1994-02-21 | 1997-07-01 | Kabushiki Kaisha Toshiba | Polishing method and apparatus for detecting a polishing end point of a semiconductor wafer |
US5643050A (en) * | 1996-05-23 | 1997-07-01 | Industrial Technology Research Institute | Chemical/mechanical polish (CMP) thickness monitor |
US5643061A (en) * | 1995-07-20 | 1997-07-01 | Integrated Process Equipment Corporation | Pneumatic polishing head for CMP apparatus |
US5644221A (en) * | 1996-03-19 | 1997-07-01 | International Business Machines Corporation | Endpoint detection for chemical mechanical polishing using frequency or amplitude mode |
US5645682A (en) * | 1996-05-28 | 1997-07-08 | Micron Technology, Inc. | Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers |
US5647952A (en) * | 1996-04-01 | 1997-07-15 | Industrial Technology Research Institute | Chemical/mechanical polish (CMP) endpoint method |
US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5660672A (en) * | 1995-04-10 | 1997-08-26 | International Business Machines Corporation | In-situ monitoring of conductive films on semiconductor wafers |
US5663101A (en) * | 1995-09-07 | 1997-09-02 | International Business Machines Corporation | Semiconductor structure having multiple levels of self-aligned interconnection metallization, and methods for its preparation |
US5663797A (en) * | 1996-05-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
US5664987A (en) * | 1994-01-31 | 1997-09-09 | National Semiconductor Corporation | Methods and apparatus for control of polishing pad conditioning for wafer planarization |
US5667433A (en) * | 1995-06-07 | 1997-09-16 | Lsi Logic Corporation | Keyed end effector for CMP pad conditioner |
US5668063A (en) * | 1995-05-23 | 1997-09-16 | Watkins Johnson Company | Method of planarizing a layer of material |
US5667629A (en) * | 1996-06-21 | 1997-09-16 | Chartered Semiconductor Manufactuing Pte, Ltd. | Method and apparatus for determination of the end point in chemical mechanical polishing |
US5667424A (en) * | 1996-09-25 | 1997-09-16 | Chartered Semiconductor Manufacturing Pte Ltd. | New chemical mechanical planarization (CMP) end point detection apparatus |
US5670410A (en) * | 1996-09-25 | 1997-09-23 | Chartered Semiconductor Manufacturing Pte Ltd. | Method of forming integrated CMP stopper and analog capacitor |
US5672091A (en) * | 1994-12-22 | 1997-09-30 | Ebara Corporation | Polishing apparatus having endpoint detection device |
US5674784A (en) * | 1996-10-02 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming polish stop layer for CMP process |
US5681215A (en) * | 1995-10-27 | 1997-10-28 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
US5691253A (en) * | 1994-06-02 | 1997-11-25 | Motorola, Inc. | Process for polishing and analyzing an exposed surface of a patterned semiconductor |
US5695660A (en) * | 1992-09-17 | 1997-12-09 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5702292A (en) * | 1996-10-31 | 1997-12-30 | Micron Technology, Inc. | Apparatus and method for loading and unloading substrates to a chemical-mechanical planarization machine |
US5705435A (en) * | 1996-08-09 | 1998-01-06 | Industrial Technology Research Institute | Chemical-mechanical polishing (CMP) apparatus |
US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
US5705320A (en) * | 1996-11-12 | 1998-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Recovery of alignment marks and laser marks after chemical-mechanical-polishing |
US5710076A (en) * | 1996-09-03 | 1998-01-20 | Industrial Technology Research Institute | Method for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coating |
US5712185A (en) * | 1996-04-23 | 1998-01-27 | United Microelectronics | Method for forming shallow trench isolation |
US5716873A (en) * | 1996-05-06 | 1998-02-10 | Micro Technology, Inc. | Method for cleaning waste matter from the backside of a semiconductor wafer substrate |
US5720845A (en) * | 1996-01-17 | 1998-02-24 | Liu; Keh-Shium | Wafer polisher head used for chemical-mechanical polishing and endpoint detection |
US5722877A (en) * | 1996-10-11 | 1998-03-03 | Lam Research Corporation | Technique for improving within-wafer non-uniformity of material removal for performing CMP |
US5722875A (en) * | 1995-05-30 | 1998-03-03 | Tokyo Electron Limited | Method and apparatus for polishing |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US5736462A (en) * | 1995-05-15 | 1998-04-07 | Sony Corporation | Method of etching back layer on substrate |
US5738567A (en) * | 1996-08-20 | 1998-04-14 | Micron Technology, Inc. | Polishing pad for chemical-mechanical planarization of a semiconductor wafer |
US5741171A (en) * | 1996-08-19 | 1998-04-21 | Sagitta Engineering Solutions, Ltd. | Precision polishing system |
US5747380A (en) * | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
US5755614A (en) * | 1996-07-29 | 1998-05-26 | Integrated Process Equipment Corporation | Rinse water recycling in CMP apparatus |
US5762536A (en) * | 1996-04-26 | 1998-06-09 | Lam Research Corporation | Sensors for a linear polisher |
US5777739A (en) * | 1996-02-16 | 1998-07-07 | Micron Technology, Inc. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers |
US5795495A (en) * | 1994-04-25 | 1998-08-18 | Micron Technology, Inc. | Method of chemical mechanical polishing for dielectric layers |
US5861055A (en) * | 1995-12-29 | 1999-01-19 | Lsi Logic Corporation | Polishing composition for CMP operations |
US5865666A (en) * | 1997-08-20 | 1999-02-02 | Lsi Logic Corporation | Apparatus and method for polish removing a precise amount of material from a wafer |
US5868608A (en) * | 1996-08-13 | 1999-02-09 | Lsi Logic Corporation | Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatus |
US5882251A (en) * | 1997-08-19 | 1999-03-16 | Lsi Logic Corporation | Chemical mechanical polishing pad slurry distribution grooves |
US5882244A (en) * | 1995-07-20 | 1999-03-16 | Ebara Corporation | Polishing apparatus |
US5888120A (en) * | 1997-09-29 | 1999-03-30 | Lsi Logic Corporation | Method and apparatus for chemical mechanical polishing |
US5893756A (en) * | 1997-08-26 | 1999-04-13 | Lsi Logic Corporation | Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing |
US5931719A (en) * | 1997-08-25 | 1999-08-03 | Lsi Logic Corporation | Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechanical polishing |
US5948697A (en) | 1996-05-23 | 1999-09-07 | Lsi Logic Corporation | Catalytic acceleration and electrical bias control of CMP processing |
US5957757A (en) | 1997-10-30 | 1999-09-28 | Lsi Logic Corporation | Conditioning CMP polishing pad using a high pressure fluid |
US5985679A (en) | 1997-06-12 | 1999-11-16 | Lsi Logic Corporation | Automated endpoint detection system during chemical-mechanical polishing |
-
1998
- 1998-12-11 US US09/209,704 patent/US6121147A/en not_active Expired - Lifetime
Patent Citations (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3734620A (en) * | 1971-04-01 | 1973-05-22 | Ibm | Multiple band atomic absorption apparatus for simultaneously measuring different physical parameters of a material |
US3748014A (en) * | 1971-12-22 | 1973-07-24 | Columbia Broadcasting Sys Inc | Near-confocal device for optical scan enhancement |
US4312732A (en) * | 1976-08-31 | 1982-01-26 | Bell Telephone Laboratories, Incorporated | Method for the optical monitoring of plasma discharge processing operations |
US4374915A (en) * | 1981-07-30 | 1983-02-22 | Intel Corporation | High contrast alignment marker for integrated circuit fabrication |
US5561541A (en) * | 1984-09-05 | 1996-10-01 | The United States Of America As Represented By The Secretary Of The Army | Frustrated total internal reflection optical power limiter |
US4689491A (en) * | 1985-04-19 | 1987-08-25 | Datasonics Corp. | Semiconductor wafer scanning system |
US4632724A (en) * | 1985-08-19 | 1986-12-30 | International Business Machines Corporation | Visibility enhancement of first order alignment marks |
US4793895A (en) * | 1988-01-25 | 1988-12-27 | Ibm Corporation | In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection |
US5151584A (en) * | 1988-07-20 | 1992-09-29 | Applied Materials, Inc. | Method and apparatus for endpoint detection in a semiconductor wafer etching system |
US5597590A (en) * | 1990-02-20 | 1997-01-28 | Nikon Corporation | Apparatus for removing a thin film layer |
US5656229A (en) * | 1990-02-20 | 1997-08-12 | Nikon Corporation | Method for removing a thin film layer |
US5081421A (en) * | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
US5242524A (en) * | 1990-05-16 | 1993-09-07 | International Business Machines Corporation | Device for detecting an end point in polishing operations |
US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
US5272115A (en) * | 1991-01-09 | 1993-12-21 | Nec Corporation | Method of leveling the laminated surface of a semiconductor substrate |
US5169491A (en) * | 1991-07-29 | 1992-12-08 | Micron Technology, Inc. | Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques |
US5240552A (en) * | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
US5245790A (en) * | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
US5222329A (en) * | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
US5245794A (en) * | 1992-04-09 | 1993-09-21 | Advanced Micro Devices, Inc. | Audio end point detector for chemical-mechanical polishing and method therefor |
US5321304A (en) * | 1992-07-10 | 1994-06-14 | Lsi Logic Corporation | Detecting the endpoint of chem-mech polishing, and resulting semiconductor device |
US5310455A (en) * | 1992-07-10 | 1994-05-10 | Lsi Logic Corporation | Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers |
US5265378A (en) * | 1992-07-10 | 1993-11-30 | Lsi Logic Corporation | Detecting the endpoint of chem-mech polishing and resulting semiconductor device |
US5624304A (en) * | 1992-07-10 | 1997-04-29 | Lsi Logic, Inc. | Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers |
US5403228A (en) * | 1992-07-10 | 1995-04-04 | Lsi Logic Corporation | Techniques for assembling polishing pads for silicon wafer polishing |
US5516400A (en) * | 1992-07-10 | 1996-05-14 | Lsi Logic Corporation | Techniques for assembling polishing pads for chemical-mechanical polishing of silicon wafers |
US5695660A (en) * | 1992-09-17 | 1997-12-09 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US5258093A (en) * | 1992-12-21 | 1993-11-02 | Motorola, Inc. | Procss for fabricating a ferroelectric capacitor in a semiconductor device |
US5626715A (en) * | 1993-02-05 | 1997-05-06 | Lsi Logic Corporation | Methods of polishing semiconductor substrates |
US5389194A (en) * | 1993-02-05 | 1995-02-14 | Lsi Logic Corporation | Methods of cleaning semiconductor substrates after polishing |
US5337015A (en) * | 1993-06-14 | 1994-08-09 | International Business Machines Corporation | In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage |
US5362669A (en) * | 1993-06-24 | 1994-11-08 | Northern Telecom Limited | Method of making integrated circuits |
US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5762537A (en) * | 1993-08-25 | 1998-06-09 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including heater |
US5399234A (en) * | 1993-09-29 | 1995-03-21 | Motorola Inc. | Acoustically regulated polishing process |
US5531861A (en) * | 1993-09-29 | 1996-07-02 | Motorola, Inc. | Chemical-mechanical-polishing pad cleaning process for use during the fabrication of semiconductor devices |
US5664987A (en) * | 1994-01-31 | 1997-09-09 | National Semiconductor Corporation | Methods and apparatus for control of polishing pad conditioning for wafer planarization |
US5643046A (en) * | 1994-02-21 | 1997-07-01 | Kabushiki Kaisha Toshiba | Polishing method and apparatus for detecting a polishing end point of a semiconductor wafer |
US5439551A (en) * | 1994-03-02 | 1995-08-08 | Micron Technology, Inc. | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes |
US5405806A (en) * | 1994-03-29 | 1995-04-11 | Motorola Inc. | Method for forming a metal silicide interconnect in an integrated circuit |
US5609511A (en) * | 1994-04-14 | 1997-03-11 | Hitachi, Ltd. | Polishing method |
US5449314A (en) * | 1994-04-25 | 1995-09-12 | Micron Technology, Inc. | Method of chimical mechanical polishing for dielectric layers |
US5795495A (en) * | 1994-04-25 | 1998-08-18 | Micron Technology, Inc. | Method of chemical mechanical polishing for dielectric layers |
US5691253A (en) * | 1994-06-02 | 1997-11-25 | Motorola, Inc. | Process for polishing and analyzing an exposed surface of a patterned semiconductor |
US5385866A (en) * | 1994-06-22 | 1995-01-31 | International Business Machines Corporation | Polish planarizing using oxidized boron nitride as a polish stop |
US5607341A (en) * | 1994-08-08 | 1997-03-04 | Leach; Michael A. | Method and structure for polishing a wafer during manufacture of integrated circuits |
US5614446A (en) * | 1994-09-02 | 1997-03-25 | Advanced Micro Devices, Inc. | Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer |
US5492594A (en) * | 1994-09-26 | 1996-02-20 | International Business Machines Corp. | Chemical-mechanical polishing tool with end point measurement station |
US5627110A (en) * | 1994-10-24 | 1997-05-06 | Advanced Micro Devices, Inc. | Method for eliminating window mask process in the fabrication of a semiconductor wafer when chemical-mechanical polish planarization is used |
US5483568A (en) * | 1994-11-03 | 1996-01-09 | Kabushiki Kaisha Toshiba | Pad condition and polishing rate monitor using fluorescence |
US5595526A (en) * | 1994-11-30 | 1997-01-21 | Intel Corporation | Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate |
US5672091A (en) * | 1994-12-22 | 1997-09-30 | Ebara Corporation | Polishing apparatus having endpoint detection device |
US5639388A (en) * | 1995-01-19 | 1997-06-17 | Ebara Corporation | Polishing endpoint detection method |
US5637185A (en) * | 1995-03-30 | 1997-06-10 | Rensselaer Polytechnic Institute | Systems for performing chemical mechanical planarization and process for conducting same |
US5559428A (en) * | 1995-04-10 | 1996-09-24 | International Business Machines Corporation | In-situ monitoring of the change in thickness of films |
US5660672A (en) * | 1995-04-10 | 1997-08-26 | International Business Machines Corporation | In-situ monitoring of conductive films on semiconductor wafers |
US5736462A (en) * | 1995-05-15 | 1998-04-07 | Sony Corporation | Method of etching back layer on substrate |
US5668063A (en) * | 1995-05-23 | 1997-09-16 | Watkins Johnson Company | Method of planarizing a layer of material |
US5722875A (en) * | 1995-05-30 | 1998-03-03 | Tokyo Electron Limited | Method and apparatus for polishing |
US5667433A (en) * | 1995-06-07 | 1997-09-16 | Lsi Logic Corporation | Keyed end effector for CMP pad conditioner |
US5643061A (en) * | 1995-07-20 | 1997-07-01 | Integrated Process Equipment Corporation | Pneumatic polishing head for CMP apparatus |
US5882244A (en) * | 1995-07-20 | 1999-03-16 | Ebara Corporation | Polishing apparatus |
US5663101A (en) * | 1995-09-07 | 1997-09-02 | International Business Machines Corporation | Semiconductor structure having multiple levels of self-aligned interconnection metallization, and methods for its preparation |
US5597442A (en) * | 1995-10-16 | 1997-01-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature |
US5681215A (en) * | 1995-10-27 | 1997-10-28 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
US5861055A (en) * | 1995-12-29 | 1999-01-19 | Lsi Logic Corporation | Polishing composition for CMP operations |
US5720845A (en) * | 1996-01-17 | 1998-02-24 | Liu; Keh-Shium | Wafer polisher head used for chemical-mechanical polishing and endpoint detection |
US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
US5777739A (en) * | 1996-02-16 | 1998-07-07 | Micron Technology, Inc. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers |
US5747380A (en) * | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
US5644221A (en) * | 1996-03-19 | 1997-07-01 | International Business Machines Corporation | Endpoint detection for chemical mechanical polishing using frequency or amplitude mode |
US5647952A (en) * | 1996-04-01 | 1997-07-15 | Industrial Technology Research Institute | Chemical/mechanical polish (CMP) endpoint method |
US5712185A (en) * | 1996-04-23 | 1998-01-27 | United Microelectronics | Method for forming shallow trench isolation |
US5762536A (en) * | 1996-04-26 | 1998-06-09 | Lam Research Corporation | Sensors for a linear polisher |
US5716873A (en) * | 1996-05-06 | 1998-02-10 | Micro Technology, Inc. | Method for cleaning waste matter from the backside of a semiconductor wafer substrate |
US5663797A (en) * | 1996-05-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
US5643050A (en) * | 1996-05-23 | 1997-07-01 | Industrial Technology Research Institute | Chemical/mechanical polish (CMP) thickness monitor |
US5948697A (en) | 1996-05-23 | 1999-09-07 | Lsi Logic Corporation | Catalytic acceleration and electrical bias control of CMP processing |
US5645682A (en) * | 1996-05-28 | 1997-07-08 | Micron Technology, Inc. | Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers |
US5667629A (en) * | 1996-06-21 | 1997-09-16 | Chartered Semiconductor Manufactuing Pte, Ltd. | Method and apparatus for determination of the end point in chemical mechanical polishing |
US5755614A (en) * | 1996-07-29 | 1998-05-26 | Integrated Process Equipment Corporation | Rinse water recycling in CMP apparatus |
US5705435A (en) * | 1996-08-09 | 1998-01-06 | Industrial Technology Research Institute | Chemical-mechanical polishing (CMP) apparatus |
US5868608A (en) * | 1996-08-13 | 1999-02-09 | Lsi Logic Corporation | Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatus |
US5741171A (en) * | 1996-08-19 | 1998-04-21 | Sagitta Engineering Solutions, Ltd. | Precision polishing system |
US5738567A (en) * | 1996-08-20 | 1998-04-14 | Micron Technology, Inc. | Polishing pad for chemical-mechanical planarization of a semiconductor wafer |
US5710076A (en) * | 1996-09-03 | 1998-01-20 | Industrial Technology Research Institute | Method for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coating |
US5667424A (en) * | 1996-09-25 | 1997-09-16 | Chartered Semiconductor Manufacturing Pte Ltd. | New chemical mechanical planarization (CMP) end point detection apparatus |
US5670410A (en) * | 1996-09-25 | 1997-09-23 | Chartered Semiconductor Manufacturing Pte Ltd. | Method of forming integrated CMP stopper and analog capacitor |
US5674784A (en) * | 1996-10-02 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming polish stop layer for CMP process |
US5722877A (en) * | 1996-10-11 | 1998-03-03 | Lam Research Corporation | Technique for improving within-wafer non-uniformity of material removal for performing CMP |
US5702292A (en) * | 1996-10-31 | 1997-12-30 | Micron Technology, Inc. | Apparatus and method for loading and unloading substrates to a chemical-mechanical planarization machine |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US5705320A (en) * | 1996-11-12 | 1998-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Recovery of alignment marks and laser marks after chemical-mechanical-polishing |
US5985679A (en) | 1997-06-12 | 1999-11-16 | Lsi Logic Corporation | Automated endpoint detection system during chemical-mechanical polishing |
US5882251A (en) * | 1997-08-19 | 1999-03-16 | Lsi Logic Corporation | Chemical mechanical polishing pad slurry distribution grooves |
US5865666A (en) * | 1997-08-20 | 1999-02-02 | Lsi Logic Corporation | Apparatus and method for polish removing a precise amount of material from a wafer |
US5931719A (en) * | 1997-08-25 | 1999-08-03 | Lsi Logic Corporation | Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechanical polishing |
US5893756A (en) * | 1997-08-26 | 1999-04-13 | Lsi Logic Corporation | Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing |
US5888120A (en) * | 1997-09-29 | 1999-03-30 | Lsi Logic Corporation | Method and apparatus for chemical mechanical polishing |
US5957757A (en) | 1997-10-30 | 1999-09-28 | Lsi Logic Corporation | Conditioning CMP polishing pad using a high pressure fluid |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6535779B1 (en) * | 1998-03-06 | 2003-03-18 | Applied Materials, Inc. | Apparatus and method for endpoint control and plasma monitoring |
US7479206B2 (en) | 1999-04-26 | 2009-01-20 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6929530B1 (en) | 1999-04-26 | 2005-08-16 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6932672B2 (en) | 1999-04-26 | 2005-08-23 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US20010044261A1 (en) * | 1999-04-26 | 2001-11-22 | Elledge Jason B. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US20060040588A1 (en) * | 1999-04-26 | 2006-02-23 | Elledge Jason B | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6620636B2 (en) * | 2001-03-12 | 2003-09-16 | Sony Corporation | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US6593154B2 (en) * | 2001-07-06 | 2003-07-15 | Mitsubishi Denki Kabushiki Kaisha | Apparatus and method for controlling semiconductor manufacturing system utilizing recycled wafers |
US6579800B2 (en) | 2001-10-12 | 2003-06-17 | Nutool, Inc. | Chemical mechanical polishing endpoint detection |
US20030213558A1 (en) * | 2001-10-12 | 2003-11-20 | Bulent Basol | Chemical mechanical polishing endpoint detection |
US6995091B2 (en) | 2001-11-23 | 2006-02-07 | Infineon Technologies Ag | Process for chemically mechanically polishing wafers |
US20030100144A1 (en) * | 2001-11-23 | 2003-05-29 | Germar Schneider | Process for chemically mechanically polishing wafers |
DE10157452A1 (en) * | 2001-11-23 | 2003-06-12 | Infineon Technologies Ag | Process for chemical mechanical polishing of wafers |
DE10157452B4 (en) * | 2001-11-23 | 2006-08-24 | Infineon Technologies Ag | Process for chemical mechanical polishing of wafers |
US20030194945A1 (en) * | 2002-04-10 | 2003-10-16 | Drown Jennifer Lynne | Method and apparatus for detection of chemical mechanical planarization endpoint and device planarity |
US6783426B2 (en) * | 2002-04-10 | 2004-08-31 | Agere Systems, Inc. | Method and apparatus for detection of chemical mechanical planarization endpoint and device planarity |
US20050173239A1 (en) * | 2002-09-13 | 2005-08-11 | Applied Materials, Inc. | End point detection for sputtering and resputtering |
US7048837B2 (en) | 2002-09-13 | 2006-05-23 | Applied Materials, Inc. | End point detection for sputtering and resputtering |
US9381097B2 (en) | 2003-06-25 | 2016-07-05 | DePuy Synthes Products, Inc. | Assembly tool for modular implants, kit and associated method |
US8419799B2 (en) | 2003-06-25 | 2013-04-16 | Depuy Products, Inc. | Assembly tool for modular implants and associated method |
US8685036B2 (en) | 2003-06-25 | 2014-04-01 | Michael C. Jones | Assembly tool for modular implants and associated method |
US8998919B2 (en) | 2003-06-25 | 2015-04-07 | DePuy Synthes Products, LLC | Assembly tool for modular implants, kit and associated method |
US20050224094A1 (en) * | 2004-03-31 | 2005-10-13 | Davis Randall W | Apparatus and methods for isolating bioreactive materials on a microarray substrate surface |
US9717545B2 (en) | 2007-10-30 | 2017-08-01 | DePuy Synthes Products, Inc. | Taper disengagement tool |
US8518050B2 (en) | 2007-10-31 | 2013-08-27 | DePuy Synthes Products, LLC | Modular taper assembly device |
US9119601B2 (en) | 2007-10-31 | 2015-09-01 | DePuy Synthes Products, Inc. | Modular taper assembly device |
US10166118B2 (en) | 2010-06-15 | 2019-01-01 | DePuy Synthes Products, Inc. | Spiral assembly tool |
US9101495B2 (en) | 2010-06-15 | 2015-08-11 | DePuy Synthes Products, Inc. | Spiral assembly tool |
US10292837B2 (en) | 2010-09-01 | 2019-05-21 | Depuy Synthes Products Inc. | Disassembly tool |
US9867720B2 (en) | 2010-09-01 | 2018-01-16 | DePuy Synthes Products, Inc. | Disassembly tool |
US9095452B2 (en) | 2010-09-01 | 2015-08-04 | DePuy Synthes Products, Inc. | Disassembly tool |
US9597188B2 (en) | 2011-04-06 | 2017-03-21 | DePuy Synthes Products, Inc. | Version-replicating instrument and orthopaedic surgical procedure for using the same to implant a revision hip prosthesis |
US9949833B2 (en) | 2011-04-06 | 2018-04-24 | DePuy Synthes Products, Inc. | Finishing RASP and orthopaedic surgical procedure for using the same to implant a revision hip prosthesis |
US10064725B2 (en) | 2011-04-06 | 2018-09-04 | DePuy Synthes Products, Inc. | Distal reamer for use during an orthopaedic surgical procedure to implant a revision hip prosthesis |
US9737405B2 (en) | 2011-04-06 | 2017-08-22 | DePuy Synthes Products, Inc. | Orthopaedic surgical procedure for implanting a revision hip prosthesis |
US10226345B2 (en) | 2011-04-06 | 2019-03-12 | DePuy Synthes Products, Inc. | Version-replicating instrument and orthopaedic surgical procedure for using the same to implant a revision hip prosthesis |
US9504578B2 (en) | 2011-04-06 | 2016-11-29 | Depuy Synthes Products, Inc | Revision hip prosthesis having an implantable distal stem component |
US10603173B2 (en) | 2011-04-06 | 2020-03-31 | DePuy Synthes Products, Inc. | Orthopaedic surgical procedure for implanting a revision hip prosthesis |
US10772730B2 (en) | 2011-04-06 | 2020-09-15 | DePuy Synthes Products, Inc. | Finishing rasp and orthopaedic surgical procedure for using the same to implant a revision hip prosthesis |
US10888427B2 (en) | 2011-04-06 | 2021-01-12 | DePuy Synthes Products, Inc. | Distal reamer for use during an orthopaedic surgical procedure to implant a revision hip prosthesis |
US10925739B2 (en) | 2011-04-06 | 2021-02-23 | DePuy Synthes Products, Inc. | Version-replicating instrument and orthopaedic surgical procedure for using the same to implant a revision hip prosthesis |
US20170355059A1 (en) * | 2016-06-14 | 2017-12-14 | Confluense Llc | Slurry Slip Stream Controller For CMP System |
CN115443206A (en) * | 2020-04-27 | 2022-12-06 | 柯尼卡美能达株式会社 | Grinding system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6121147A (en) | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance | |
US6383332B1 (en) | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint | |
US6663469B2 (en) | Polishing method and apparatus | |
US5791970A (en) | Slurry recycling system for chemical-mechanical polishing apparatus | |
US6071818A (en) | Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material | |
US6517413B1 (en) | Method for a copper CMP endpoint detection system | |
US6287879B1 (en) | Endpoint stabilization for polishing process | |
US6007408A (en) | Method and apparatus for endpointing mechanical and chemical-mechanical polishing of substrates | |
EP1708848B1 (en) | Chemical mechanical planarization process control utilizing in-situ conditioning process | |
US5830041A (en) | Method and apparatus for determining endpoint during a polishing process | |
US6080670A (en) | Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie | |
US6623331B2 (en) | Polishing disk with end-point detection port | |
KR20010078154A (en) | Endpoint monitoring with polishing rate change | |
CA2724228A1 (en) | In-line effluent analysis method and apparatus for cmp process control | |
US7074109B1 (en) | Chemical mechanical polishing control system and method | |
US6074517A (en) | Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer | |
US20060113036A1 (en) | Computer integrated manufacturing control system for oxide chemical mechanical polishing | |
US6201253B1 (en) | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system | |
US6716364B1 (en) | Method and apparatus for detecting presence of residual polishing slurry subsequent to polishing of a semiconductor wafer | |
US6609946B1 (en) | Method and system for polishing a semiconductor wafer | |
US6316276B1 (en) | Apparatus and method of planarizing a semiconductor wafer that includes a first reflective substance and a second reflective substance | |
KR20020025005A (en) | Dry type chemical-mechanical polishing method | |
US6213844B1 (en) | Method for obtaining a desired film thickness using chemical mechanical polishing | |
US6991516B1 (en) | Chemical mechanical polishing with multi-stage monitoring of metal clearing | |
US6285035B1 (en) | Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: LSI LOGIC CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DANIEL, DAVID W.;GREGORY, JOHN W.;ALLMAN, DERRYL D.J.;REEL/FRAME:009644/0188 Effective date: 19981208 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FEPP | Fee payment procedure |
Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AG Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:LSI CORPORATION;AGERE SYSTEMS LLC;REEL/FRAME:032856/0031 Effective date: 20140506 |
|
AS | Assignment |
Owner name: LSI CORPORATION, CALIFORNIA Free format text: CHANGE OF NAME;ASSIGNOR:LSI LOGIC CORPORATION;REEL/FRAME:033102/0270 Effective date: 20070406 |
|
AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LSI CORPORATION;REEL/FRAME:035390/0388 Effective date: 20140814 |
|
AS | Assignment |
Owner name: LSI CORPORATION, CALIFORNIA Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039 Effective date: 20160201 Owner name: AGERE SYSTEMS LLC, PENNSYLVANIA Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039 Effective date: 20160201 |
|
AS | Assignment |
Owner name: BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH CAROLINA Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:037808/0001 Effective date: 20160201 Owner name: BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:037808/0001 Effective date: 20160201 |
|
AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD., SINGAPORE Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BANK OF AMERICA, N.A., AS COLLATERAL AGENT;REEL/FRAME:041710/0001 Effective date: 20170119 Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BANK OF AMERICA, N.A., AS COLLATERAL AGENT;REEL/FRAME:041710/0001 Effective date: 20170119 |
|
AS | Assignment |
Owner name: BELL SEMICONDUCTOR, LLC, ILLINOIS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;BROADCOM CORPORATION;REEL/FRAME:044886/0608 Effective date: 20171208 |
|
AS | Assignment |
Owner name: CORTLAND CAPITAL MARKET SERVICES LLC, AS COLLATERA Free format text: SECURITY INTEREST;ASSIGNORS:HILCO PATENT ACQUISITION 56, LLC;BELL SEMICONDUCTOR, LLC;BELL NORTHERN RESEARCH, LLC;REEL/FRAME:045216/0020 Effective date: 20180124 |
|
AS | Assignment |
Owner name: BELL NORTHERN RESEARCH, LLC, ILLINOIS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CORTLAND CAPITAL MARKET SERVICES LLC;REEL/FRAME:059720/0719 Effective date: 20220401 Owner name: BELL SEMICONDUCTOR, LLC, ILLINOIS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CORTLAND CAPITAL MARKET SERVICES LLC;REEL/FRAME:059720/0719 Effective date: 20220401 Owner name: HILCO PATENT ACQUISITION 56, LLC, ILLINOIS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CORTLAND CAPITAL MARKET SERVICES LLC;REEL/FRAME:059720/0719 Effective date: 20220401 |