US6150282A - Selective removal of etching residues - Google Patents

Selective removal of etching residues Download PDF

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US6150282A
US6150282A US08/969,593 US96959397A US6150282A US 6150282 A US6150282 A US 6150282A US 96959397 A US96959397 A US 96959397A US 6150282 A US6150282 A US 6150282A
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fluoride
cleaning composition
anhydride
group
composition
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US08/969,593
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David L. Rath
Rangarajan Jagannathan
Kenneth J. McCullough
Harald F. Okorn-Schmidt
Karen P. Madden
Keith R. Pope
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International Business Machines Corp
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International Business Machines Corp
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Priority to TW087109095A priority patent/TW385502B/en
Priority to KR1019980042993A priority patent/KR100305938B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Definitions

  • the present invention is concerned with selectively removing etching residues from a substrate and particularly selectively removing residues without attacking metal also exposed to the composition used for removing the residues.
  • the present invention is concerned with certain cleaning compositions that are suitable for removing etching residues.
  • etching processes In the fabrication of microelectronic components, a number of the steps involved, for instance, in preparing integrated circuit chips and the packaging for the chips (articles to which the chips are attached and protected), are etching processes. Accordingly, over the years, a number of vastly different types of etching processes to remove material, sometimes in selective areas, have been developed and are utilized to varying degrees. Moreover, the steps of etching different layers which constitute, for instance, the finished integrated circuit chip are among the most critical and crucial steps.
  • RIE reactive ion etching
  • plasma etching and ion milling are being used to define the pattern in a substrate and to form vias.
  • reactive ion etching is used to produce vias through the interlayer dielectric to provide contact between one level of silicon, silicide or metal wiring to the next level of wiring.
  • These vias typically expose Al, AlCu, Cu, Ti, TiN, Ta, TaN, silicon or a silicide such as a silicide of tungsten, titanium or cobalt.
  • the RIE process leaves a residue of a complex mixture that may include re-sputtered oxide material and possibly small amounts of organic material from the resists used to delineate the vias.
  • the present invention is concerned with a method for selectively removing etching residues.
  • the process of the present invention comprises contacting an article that contains etching residues and metal, silicon, silicate and/or interlevel dielectric materials with a cleaning composition that contains about 0.05 to about 3 molar of a fluoride containing compound and an organic solvent to thereby selectively remove the etching residue at a rate greater than the rate for the metal, silicon, silicide and/or interlevel dielectric materials.
  • the present invention is concerned with certain preferred cleaning compositions that are capable of selectively removing etching residues at a rate greater than the rate for the metal, silicon, silicide and/or interlevel dielectric materials.
  • the preferred compositions of the present invention contain about 0.05 to about 3 molar of a fluoride containing compound and an organic solvent.
  • the organic solvents employed in the present invention typically have relatively high flash point and provide low viscosity compositions.
  • Suitable solvents include sulfolanes, oxolanes, esters, ketones, aldehydes, lactones, halogenated hydrocarbons, alcohols including mono- and polyhydric alcohols, amines and imides.
  • the present invention is concerned with selectively removing etching residues and especially residues caused by forming vias by reactive ion etching. Moreover, the etching residues are present in an article that also includes metal, silicon, silicate and/or interlevel dielectric material such as deposited silicon oxides, wherein both the residues and the metal, silicon, silicide and/or interlevel dielectric materials will come in contact with the cleaning composition.
  • the present invention provides for selectively removing the residues at a rate of at least about 100 times, preferably at least about 250 and most preferably at least about 500 times the rate for the metal, silicon, silicide and interlevel dielectric materials.
  • the metal is typically copper, copper alloy, titanium, titanium nitride, tantalum, tantalum nitride, aluminum and/or aluminum alloy.
  • the residues removed according to the present invention are preferably those created by reactive ion etching of vias.
  • the cleaning compositions employed pursuant to the present invention are preferably non-aqueous and contain a compound containing fluoride and an organic solvent.
  • the amount of the fluoride containing compound in the composition is about 0.05 to about 3 molar, and preferably about 0.2 to about 2.5 molar, and most preferably about 0.25 to about 1.5 molar.
  • Typical compounds providing a fluoride source according to the present invention are hydrofluoric acid, ammonium fluoride, fluoroborates, fluoroboric acid, tin bifluoride, antimony fluoride, tetrabutylammonium tetrafluoroborate, and aluminum hexafluoride.
  • a fluoride salt of an aliphatic primary, secondary or tertiary amine can be used. Such have the following formula:
  • R 1 , R 2 and R 3 each individually represents H or an alkyl group.
  • the total number of carbon atoms in the R 1 , R 2 and R 3 groups is 12 carbon atoms or less.
  • the preferred fluoride compounds are hydrogen fluoride and ammonium fluoride.
  • the hydrogen fluoride is typically added as a 49 weight percent aqueous solution.
  • a component capable of rendering the composition at least substantially non-aqueous refers to non-aqueous as well as containing water of up to 20 and preferably up to 3% by weight of the fluoride content.
  • Such component is referred to herein as a dehydrating agent.
  • Suitable dehydrating agents are alkyl anhydrides and aryl anhydrides.
  • the alkyl group typically contains 1-8 carbon atoms and the aryl group typically contains 6-9 carbon atoms in the ring.
  • the aryl groups can be substituted on the ring with an alkyl group containing 1-8 carbon atoms.
  • Typical anhydrides are acetic anhydride, benzyl anhydride, phenyl anhydride.
  • the dehydrating agent must not adversely affect to an undesirable extent the cleaning ability characteristics of the composition.
  • the amount of the anhydride is at least one anhydride group (O ⁇ COC ⁇ O) per H 2 O molecule, and preferably at least about a 5% excess and more preferably at least about 10% excess of one anhydride group per H 2 O molecule.
  • the excess will not be greater than about 25%.
  • the anhydride will be used in an amount less than one anhydride group per H 2 O molecule to correspond to the small amount of water.
  • the cleaning composition can be produced by adding the fluoride as a non-aqueous component such as by bubbling anhydrous HF gas into an organic solvent or by adding an organic fluoride.
  • the anhydrous compositions can be prepared by admixing an aqueous solution of the fluoride compound with the organic solvent and then heating the composition to evaporate water.
  • suitable organic compounds include oxolanes, sulfolanes, esters, ketones, aldehydes, lactones, halogenated solvents, amines, imides and alcohols.
  • suitable esters are esters of carbonic acids, benzoic acid, phthalic acid, isophthalic acid and terephthalic acid, and especially the C 1 -C 6 alkyl esters.
  • Preferred organic solvents are propylene carbonate, N-methyl pyrrolidone, gamma butyrolactone, methylene chloride, benzyl alcohol, N-formyl morpholine, N-formyl piperidine, cyclohexanone, cyclopentanone, methyl benzoate, diglyme, 2-methyl tetrahydrofuran, and methyl and ethyl esters of phthalic, isophthalic or terephthalic acids.
  • the more preferred solvents employed pursuant to the present invention are propylene carbonate, N-methylpyrrolidone and gamma butyrolactone, ethylene glycol and propylene glycol with propylene carbonate being the most preferred.
  • Organic solvents employed in the present invention provide for low viscosity compositions, which in turn render the compositions more workable and providing for better etch uniformity. This is especially so when compared to using glycerol.
  • compositions can include a tertiary amine to facilitate removing any photoresist residue that might be remaining after the etching.
  • Typical examples are represented by the formula R 4 N(R 5 )R 6 wherein each individually represents alkyl, aryl, alkaryl, aralkyl and substituted derivatives such as those containing one or more hydroxyl or anhydride groups.
  • the alkyl groups typically contain 1-12 carbon atoms and the aryl groups typically contain 6-14 carbon atoms.
  • Typical tertiary amines are N N,N',N'-tetramethyl ethylenediamine and triethanol amine. When present, the tertiary amine is typically present in amounts of about 0.05 to about 5 volume percent, and more typically about 1 to about 3 volume percent.
  • the cleaning process of the present invention is typically carried out at temperatures of about 20° C. to about 90° C., and preferably about 30° C. to about 70° C.
  • Employing increased temperature results in increasing the removal rates of the residues but not necessarily the rates for the metal, silicon, silicide and interlevel dielectric material, thereby increasing the selectivity of removing the residues.
  • a cleaning composition is prepared by admixing one part by volume of a 49 percent by weight aqueous solution of HF with about 28 parts by volume of propylene carbonate to provide a 1 molar HF solution in propylene carbonate; and acetic anhydride in an amount to provide about 1.5 molar solution of the acetic anhydride.
  • RIE reactive ion etching

Abstract

Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.

Description

TECHNICAL FIELD
The present invention is concerned with selectively removing etching residues from a substrate and particularly selectively removing residues without attacking metal also exposed to the composition used for removing the residues. In addition, the present invention is concerned with certain cleaning compositions that are suitable for removing etching residues.
BACKGROUND ART
In the fabrication of microelectronic components, a number of the steps involved, for instance, in preparing integrated circuit chips and the packaging for the chips (articles to which the chips are attached and protected), are etching processes. Accordingly, over the years, a number of vastly different types of etching processes to remove material, sometimes in selective areas, have been developed and are utilized to varying degrees. Moreover, the steps of etching different layers which constitute, for instance, the finished integrated circuit chip are among the most critical and crucial steps.
Increasingly, reactive ion etching (RIE), plasma etching and ion milling are being used to define the pattern in a substrate and to form vias. For instance, in complex semiconductor devices such as advanced DRAMS and logic devices with multiple layers of back end of line interconnect wiring, reactive ion etching is used to produce vias through the interlayer dielectric to provide contact between one level of silicon, silicide or metal wiring to the next level of wiring. These vias typically expose Al, AlCu, Cu, Ti, TiN, Ta, TaN, silicon or a silicide such as a silicide of tungsten, titanium or cobalt. The RIE process leaves a residue of a complex mixture that may include re-sputtered oxide material and possibly small amounts of organic material from the resists used to delineate the vias.
It would therefore be desirable to provide a selective cleaning procedure capable of removing the residues caused by the etching and especially a plasma, RIE or ion milling etching. Moreover, it would be desirable to provide a selective cleaning procedure capable of removing the etching residue that exhibits high selectivity for the residue as compared to metal, silicon, silicide and/or interlevel dielectric materials such as deposited oxides that might also be exposed to the cleaning composition.
SUMMARY OF INVENTION
The present invention is concerned with a method for selectively removing etching residues. The process of the present invention comprises contacting an article that contains etching residues and metal, silicon, silicate and/or interlevel dielectric materials with a cleaning composition that contains about 0.05 to about 3 molar of a fluoride containing compound and an organic solvent to thereby selectively remove the etching residue at a rate greater than the rate for the metal, silicon, silicide and/or interlevel dielectric materials.
In addition, the present invention is concerned with certain preferred cleaning compositions that are capable of selectively removing etching residues at a rate greater than the rate for the metal, silicon, silicide and/or interlevel dielectric materials. The preferred compositions of the present invention contain about 0.05 to about 3 molar of a fluoride containing compound and an organic solvent.
The organic solvents employed in the present invention typically have relatively high flash point and provide low viscosity compositions. Suitable solvents include sulfolanes, oxolanes, esters, ketones, aldehydes, lactones, halogenated hydrocarbons, alcohols including mono- and polyhydric alcohols, amines and imides.
Other objects and advantages of the present invention will become readily apparent to those skilled in this art from the following detailed description, wherein it is shown and described only the preferred embodiments of the invention, simply by way of illustration of the best mode contemplated of carrying out the invention. As will be realized, the invention is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, without departing from the invention. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive.
BEST AND VARIOUS MODES FOR CARRYING OUT INVENTION
The present invention is concerned with selectively removing etching residues and especially residues caused by forming vias by reactive ion etching. Moreover, the etching residues are present in an article that also includes metal, silicon, silicate and/or interlevel dielectric material such as deposited silicon oxides, wherein both the residues and the metal, silicon, silicide and/or interlevel dielectric materials will come in contact with the cleaning composition. The present invention provides for selectively removing the residues at a rate of at least about 100 times, preferably at least about 250 and most preferably at least about 500 times the rate for the metal, silicon, silicide and interlevel dielectric materials. The metal is typically copper, copper alloy, titanium, titanium nitride, tantalum, tantalum nitride, aluminum and/or aluminum alloy. The residues removed according to the present invention are preferably those created by reactive ion etching of vias.
The cleaning compositions employed pursuant to the present invention are preferably non-aqueous and contain a compound containing fluoride and an organic solvent. The amount of the fluoride containing compound in the composition is about 0.05 to about 3 molar, and preferably about 0.2 to about 2.5 molar, and most preferably about 0.25 to about 1.5 molar.
Typical compounds providing a fluoride source according to the present invention are hydrofluoric acid, ammonium fluoride, fluoroborates, fluoroboric acid, tin bifluoride, antimony fluoride, tetrabutylammonium tetrafluoroborate, and aluminum hexafluoride. Also, a fluoride salt of an aliphatic primary, secondary or tertiary amine can be used. Such have the following formula:
R.sub.1 N(R.sub.3)R.sub.2
wherein R1, R2 and R3 each individually represents H or an alkyl group.
Typically, the total number of carbon atoms in the R1, R2 and R3 groups is 12 carbon atoms or less. The preferred fluoride compounds are hydrogen fluoride and ammonium fluoride.
The hydrogen fluoride is typically added as a 49 weight percent aqueous solution. When the fluoride is added as an aqueous composition, it is preferred to add a component capable of rendering the composition at least substantially non-aqueous. Substantially non-aqueous refers to non-aqueous as well as containing water of up to 20 and preferably up to 3% by weight of the fluoride content. Such component is referred to herein as a dehydrating agent. Suitable dehydrating agents are alkyl anhydrides and aryl anhydrides. The alkyl group typically contains 1-8 carbon atoms and the aryl group typically contains 6-9 carbon atoms in the ring. The aryl groups can be substituted on the ring with an alkyl group containing 1-8 carbon atoms. Typical anhydrides are acetic anhydride, benzyl anhydride, phenyl anhydride. Of course the dehydrating agent must not adversely affect to an undesirable extent the cleaning ability characteristics of the composition.
Typically, the amount of the anhydride is at least one anhydride group (O═COC═O) per H2 O molecule, and preferably at least about a 5% excess and more preferably at least about 10% excess of one anhydride group per H2 O molecule. Usually the excess will not be greater than about 25%. However, when a small amount of water can be tolerated (i.e.--0.1 to 20% and more typically 0.1 to 3% by weight based upon the weight of the fluoride content), the anhydride will be used in an amount less than one anhydride group per H2 O molecule to correspond to the small amount of water.
In the alternative, the cleaning composition can be produced by adding the fluoride as a non-aqueous component such as by bubbling anhydrous HF gas into an organic solvent or by adding an organic fluoride. Also, the anhydrous compositions can be prepared by admixing an aqueous solution of the fluoride compound with the organic solvent and then heating the composition to evaporate water.
Examples of suitable organic compounds include oxolanes, sulfolanes, esters, ketones, aldehydes, lactones, halogenated solvents, amines, imides and alcohols. Examples of suitable esters are esters of carbonic acids, benzoic acid, phthalic acid, isophthalic acid and terephthalic acid, and especially the C1 -C6 alkyl esters. Preferred organic solvents are propylene carbonate, N-methyl pyrrolidone, gamma butyrolactone, methylene chloride, benzyl alcohol, N-formyl morpholine, N-formyl piperidine, cyclohexanone, cyclopentanone, methyl benzoate, diglyme, 2-methyl tetrahydrofuran, and methyl and ethyl esters of phthalic, isophthalic or terephthalic acids. The more preferred solvents employed pursuant to the present invention are propylene carbonate, N-methylpyrrolidone and gamma butyrolactone, ethylene glycol and propylene glycol with propylene carbonate being the most preferred.
Organic solvents employed in the present invention provide for low viscosity compositions, which in turn render the compositions more workable and providing for better etch uniformity. This is especially so when compared to using glycerol.
In addition, the compositions can include a tertiary amine to facilitate removing any photoresist residue that might be remaining after the etching. Typical examples are represented by the formula R4 N(R5)R6 wherein each individually represents alkyl, aryl, alkaryl, aralkyl and substituted derivatives such as those containing one or more hydroxyl or anhydride groups. The alkyl groups typically contain 1-12 carbon atoms and the aryl groups typically contain 6-14 carbon atoms. Typical tertiary amines are N N,N',N'-tetramethyl ethylenediamine and triethanol amine. When present, the tertiary amine is typically present in amounts of about 0.05 to about 5 volume percent, and more typically about 1 to about 3 volume percent.
The cleaning process of the present invention is typically carried out at temperatures of about 20° C. to about 90° C., and preferably about 30° C. to about 70° C. Employing increased temperature results in increasing the removal rates of the residues but not necessarily the rates for the metal, silicon, silicide and interlevel dielectric material, thereby increasing the selectivity of removing the residues.
The following non-limiting examples are presented to further illustrate the present invention.
EXAMPLE 1
A cleaning composition is prepared by admixing one part by volume of a 49 percent by weight aqueous solution of HF with about 28 parts by volume of propylene carbonate to provide a 1 molar HF solution in propylene carbonate; and acetic anhydride in an amount to provide about 1.5 molar solution of the acetic anhydride. A patterned silicon wafer containing vias formed by reactive ion etching (RIE) through interlevel dielectric of silicon dioxide where the vias expose aluminum conductive units, is immersed in the cleaning composition. The cleaning is carried out at a temperature of about 35° C. for about 4 minutes. The cleaning solution removes the RIE residues without removing any of the aluminum.
In this disclosure, there are shown and described only the preferred embodiments of the invention, but as aforementioned, it is to be understood that the invention is capable of use in various other combinations and environments and is capable of changes or modifications within the scope of the inventive concept as expressed herein.

Claims (40)

What is claimed is:
1. A method for selectively removing etching residues which comprises contacting an article containing said residues and at least one member selected from the group consisting of metal, silicon, silicide and interlevel dielectric materials with a substantially non-aqueous cleaning composition containing about 0.05 to about 3 molar of a fluoride containing compound and an organic solvent, to thereby selectively etch said residues at a rate greater than said member.
2. The method of claim 1 wherein said residues are caused by an etching process selected from the group consisting of plasma etching, reactive ion etching and ion milling.
3. The method of claim 1 wherein said residues are caused by reactive ion etching.
4. The method of claim 1 wherein said solvent is selected from the group consisting of oxolanes, sulfolanes, esters, ketones, aldehydes, lactones, halogenated hydrocarbons, alcohols, amines and imides.
5. The method of claim 1 wherein said organic solvent is selected from the group consisting of propylene carbonate, N-methyl pyrrolidone, gamma butyrolactone, methylene chloride, benzyl alcohol, N-formyl morpholine, N-formyl piperidine, cyclohexanone, cyclopentanone, methyl benzoate, diglyme, 2-methyl tetrahydrofuran, methyl and ethyl esters of acid selected from the group consisting of phthalic acid, isophthalic acid and terephthalic acid.
6. The method of claim 1 wherein said organic solvent is selected from the group consisting of propylene carbonate, N-methyl pyrrolidone and gamma butyrolactone.
7. The method of claim 1 wherein said solvent is propylene carbonate.
8. The method of claim 1 wherein said fluoride containing compound is selected from the group consisting of hydrofluoric acid, ammonium fluoride, fluoroborates, tetrabutylammonium tetrafluoroborate, fluoroboric acid, aluminum hexafluoride, tin biflouride, antimony fluoride and fluoride salt of an aliphatic primary, secondary or tertiary amine.
9. The method of claim 1 wherein said fluoride containing compound is hydrofluoric acid or ammonium fluoride.
10. The method of claim 1 wherein said fluoride containing compound is hydrofluoric acid.
11. The method of claim 1 wherein said composition also contains an anhydride.
12. The method of claim 11 wherein said anhydride is an alkyl anhydride or aryl anhydride.
13. The method of claim 11 wherein said anhydride is acetic anhydride.
14. The method of claim 11 wherein the amount of said anhydride is at least one anhydride group per water molecule in said composition.
15. The method of claim 1 wherein said cleaning composition contains water in an amount of up to 20% by weight of said fluoride.
16. The method of claim 1 wherein said cleaning composition is free from water.
17. The method of claim 1 wherein the amount of said fluoride is about 0.2 to about 2.5 molar.
18. The method of claim 1 wherein the amount of said fluoride is about 0.25 to about 1.5 molar.
19. The method of claim 1 wherein the contacting with said composition is carried out at a temperature of about 20° C. to about 90° C.
20. The method of claim 1 wherein the contacting with said composition is carried out at a temperature of about 30° C. to about 70° C.
21. The method of claim 1 wherein said composition also contains a tertiary amine.
22. The method of claim 1 wherein said tertiary amine is N,N,N',N'tetramethyl ethylenediamine.
23. The method of claim 21 wherein the amount of said tertiary amine is about 0.05 to about 5 volume percent.
24. A substantially non-aqueous cleaning composition suitable for removing etching residue and containing about 0.05 to about 3.0 molar of a fluoride containing compound, an organic solvent and positive amount of an anhydride sufficient to render said composition substantially non-aqueous wherein said organic solvent is selected from the group consisting of oxolanes, sulfolanes, esters, ketones, aldehydes, lactones, halogenated hydrocarbons, alcohols, amines and imides.
25. The cleaning composition of claim 24 wherein said organic solvent is selected from the group consisting of propylene carbonate, N-methyl pyrrolidone, gamma butyrolactone, methylene chloride, benzyl alcohol, N-formyl morpholine, N-formyl piperidine, cyclohexanone, cyclopentanone, methyl benzoate, diglyme, 2-methyl tetrahydrofuran, methyl and ethyl esters of acid selected from the group consisting of phthalic acid, isophthalic acid and terephthalic acid.
26. The cleaning composition of claim 24 wherein said organic solvent is selected from the group consisting of propylene carbonate, N-methyl pyrrolidone and gamma butyrolactone.
27. The cleaning composition of claim 24 wherein said solvent is propylene carbonate.
28. The cleaning composition of claim 24 wherein said fluoride containing compound is selected from the group consisting of hydrofluoric acid, ammonium fluoride, fluoroborates, tetrabutylammonium tetrafluoroborate, fluoroboric acid, aluminum hexafluoride, tin bifluoride, antimony fluoride, and fluoride salt of an aliphatic primary, secondary or tertiary amine.
29. The cleaning composition of claim 24 wherein said fluoride containing compound is hydrofluoric acid or ammonium fluoride.
30. The cleaning composition of claim 24 wherein said fluoride containing compound is hydrofluoric acid.
31. The cleaning composition of claim 24 wherein the amount of water is up to 20% by weight of said fluoride.
32. The cleaning composition of claim 24 being non-aqueous.
33. The cleaning composition of claim 24 wherein the amount of said fluoride is about 0.2 to about 2.5 molar.
34. The cleaning composition of claim 24 wherein said anhydride is acetic anhydride.
35. The cleaning composition of claim 24 wherein said composition also includes a tertiary amine.
36. The cleaning composition of claim 35 wherein said tertiary amine is N,N,N',N'tetramethyl ethylenediamine.
37. The cleaning composition of claim 35 wherein the amount of said tertiary amine is about 0.05 to about 5 volume percent.
38. A substantially non-aqueous cleaning composition suitable for removing etching residue and containing about 0.05 to about 3.0 molar of a fluoride containing compound, an organic solvent and positive amount of an anhydride sufficient to render said composition substantially non-aqueous, and further comprising a tertiary amine.
39. The cleaning composition of claim 38 wherein said tertiary amine is N,N,N',N'tetramethyl ethylenediamine.
40. The cleaning composition of claim 38 wherein the amount of said tertiary amine is about 0.05 to about 5 volume percent.
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US6394114B1 (en) * 1999-11-22 2002-05-28 Chartered Semiconductor Manufacturing Ltd. Method for stripping copper in damascene interconnects
US6454868B1 (en) * 2000-04-17 2002-09-24 Electrochemicals Inc. Permanganate desmear process for printed wiring boards
US20030235986A1 (en) * 2002-06-20 2003-12-25 Wolfgang Sievert Silicon oxide etching compositions with reduced water content
US20040192046A1 (en) * 2002-06-20 2004-09-30 Honeywell International, Inc. Highly selective silicon oxide etching compositions
WO2005047422A1 (en) * 2003-11-11 2005-05-26 Honeywell International Inc. Selective etch and cleaning chemistries, methods of production and uses thereof
US20050143270A1 (en) * 2003-10-28 2005-06-30 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US20070066502A1 (en) * 2005-07-28 2007-03-22 Rohm And Haas Electronic Materials Llc Stripper
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
US20080076965A1 (en) * 2005-03-09 2008-03-27 Fukashi Yoshizawa Body-Insertable Apparatus and Body-Insertable Apparatus System
US20080153732A1 (en) * 2004-12-17 2008-06-26 Hisahiko Iwamoto Cleaning Agent
US20090253268A1 (en) * 2008-04-03 2009-10-08 Honeywell International, Inc. Post-contact opening etchants for post-contact etch cleans and methods for fabricating the same
US7833957B2 (en) 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
US20110046036A1 (en) * 2008-02-29 2011-02-24 Gemmill William R Post Plasma Etch/Ash Residue and Silicon-Based Anti-Reflective Coating Remover Compositions Containing Tetrafluoroborate Ion
US20130302512A1 (en) * 2012-05-09 2013-11-14 Amedica Corporation Methods for altering the surface chemistry of biomedical implants and related apparatus
US8642475B2 (en) 2010-12-21 2014-02-04 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with reduced polysilicon residue and method of manufacture thereof
US9613808B1 (en) 2016-01-19 2017-04-04 United Microelectronics Corp. Method of forming multilayer hard mask with treatment for removing impurities and forming dangling bonds
US9925295B2 (en) 2012-05-09 2018-03-27 Amedica Corporation Ceramic and/or glass materials and related methods

Citations (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE238622C (en) *
US3676240A (en) * 1970-04-14 1972-07-11 Bell Telephone Labor Inc Method of etching materials capable of being etched with hydrofluoric acid
US3935117A (en) * 1970-08-25 1976-01-27 Fuji Photo Film Co., Ltd. Photosensitive etching composition
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4267013A (en) * 1978-06-05 1981-05-12 Hitachi, Ltd. Method for dry-etching aluminum and aluminum alloys
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4285763A (en) * 1980-01-29 1981-08-25 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V semiconductor compounds
JPS56161677A (en) * 1980-05-16 1981-12-12 Hitachi Ltd Forming method for diaphragm
US4325984A (en) * 1980-07-28 1982-04-20 Fairchild Camera & Instrument Corp. Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films
US4334349A (en) * 1979-06-06 1982-06-15 Tokyo Shibaura Denki Kabushiki Kaisha Method of producing semiconductor device
US4351696A (en) * 1981-10-28 1982-09-28 Fairchild Camera & Instrument Corp. Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
JPS58110078A (en) * 1981-12-23 1983-06-30 Nec Corp Manufacture of semiconductor device
US4395304A (en) * 1982-05-11 1983-07-26 Rca Corporation Selective etching of phosphosilicate glass
JPS58143532A (en) * 1982-02-22 1983-08-26 Toshiba Corp Processing method for insulating film
JPS58204540A (en) * 1982-05-22 1983-11-29 Matsushita Electric Works Ltd Manufacture of semiconductor device
US4444618A (en) * 1983-03-03 1984-04-24 General Electric Company Processes and gas mixtures for the reactive ion etching of aluminum and aluminum alloys
US4472237A (en) * 1981-05-22 1984-09-18 At&T Bell Laboratories Reactive ion etching of tantalum and silicon
US4547260A (en) * 1983-04-13 1985-10-15 Fujitsu Limited Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices
US4692205A (en) * 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US4899767A (en) * 1984-05-21 1990-02-13 Cfm Technologies, Inc. Method and system for fluid treatment of semiconductor wafers
US4962049A (en) * 1989-04-13 1990-10-09 Applied Materials, Inc. Process for the plasma treatment of the backside of a semiconductor wafer
US4971715A (en) * 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
US4985113A (en) * 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
US4985990A (en) * 1988-12-14 1991-01-22 International Business Machines Corporation Method of forming conductors within an insulating substrate
US4987101A (en) * 1988-12-16 1991-01-22 International Business Machines Corporation Method for providing improved insulation in VLSI and ULSI circuits
US5012692A (en) * 1988-09-24 1991-05-07 Shimano Industrial Company Limited Change-speed lever apparatus for use in bicycle
US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
US5082518A (en) * 1990-10-29 1992-01-21 Submicron Systems, Inc. Sparger plate for ozone gas diffusion
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
US5217570A (en) * 1991-01-31 1993-06-08 Sony Corporation Dry etching method
US5308440A (en) * 1991-09-05 1994-05-03 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor device with air-bridge interconnection
US5334332A (en) * 1990-11-05 1994-08-02 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US5338416A (en) * 1993-02-05 1994-08-16 Massachusetts Institute Of Technology Electrochemical etching process
US5348619A (en) * 1992-09-03 1994-09-20 Texas Instruments Incorporated Metal selective polymer removal
US5348627A (en) * 1993-05-12 1994-09-20 Georgia Tech Reserach Corporation Process and system for the photoelectrochemical etching of silicon in an anhydrous environment
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films
US5387361A (en) * 1991-10-09 1995-02-07 Sharp Kabushiki Kaisha Etching liquid for aluminium, method of etching aluminium and etched aluminium product
US5407860A (en) * 1994-05-27 1995-04-18 Texas Instruments Incorporated Method of forming air gap dielectric spaces between semiconductor leads
US5419779A (en) * 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5468342A (en) * 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US5475267A (en) * 1991-04-26 1995-12-12 Mitsubishi Denki Kabushiki Kaisha Multilayer interconnection structure for a semiconductor device
US5533635A (en) * 1994-10-11 1996-07-09 Chartered Semiconductor Manufacturing Pte. Ltd. Method of wafer cleaning after metal etch
US5544776A (en) * 1994-04-26 1996-08-13 Nec Corporation Composition in a liquid used for removing a photoresist film and method therefor
US5556482A (en) * 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
US5591299A (en) * 1995-04-28 1997-01-07 Advanced Micro Devices, Inc. System for providing integrated monitoring, control and diagnostics functions for semiconductor spray process tools
US5650041A (en) * 1994-06-17 1997-07-22 Texas Instruments Incorporated Semiconductor device fabrication method
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US5709756A (en) * 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5780363A (en) * 1997-04-04 1998-07-14 International Business Machines Coporation Etching composition and use thereof
US5824601A (en) * 1997-06-30 1998-10-20 Motorola, Inc. Carboxylic acid etching solution and method

Patent Citations (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE238622C (en) *
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US3676240A (en) * 1970-04-14 1972-07-11 Bell Telephone Labor Inc Method of etching materials capable of being etched with hydrofluoric acid
US3935117A (en) * 1970-08-25 1976-01-27 Fuji Photo Film Co., Ltd. Photosensitive etching composition
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4267013A (en) * 1978-06-05 1981-05-12 Hitachi, Ltd. Method for dry-etching aluminum and aluminum alloys
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4334349A (en) * 1979-06-06 1982-06-15 Tokyo Shibaura Denki Kabushiki Kaisha Method of producing semiconductor device
US4285763A (en) * 1980-01-29 1981-08-25 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V semiconductor compounds
JPS56161677A (en) * 1980-05-16 1981-12-12 Hitachi Ltd Forming method for diaphragm
US4325984A (en) * 1980-07-28 1982-04-20 Fairchild Camera & Instrument Corp. Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films
US4325984B1 (en) * 1980-07-28 1991-08-06 Fairchild Semiconductor
US4325984B2 (en) * 1980-07-28 1998-03-03 Fairchild Camera & Inst Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films
US4472237A (en) * 1981-05-22 1984-09-18 At&T Bell Laboratories Reactive ion etching of tantalum and silicon
US4351696A (en) * 1981-10-28 1982-09-28 Fairchild Camera & Instrument Corp. Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
JPS58110078A (en) * 1981-12-23 1983-06-30 Nec Corp Manufacture of semiconductor device
JPS58143532A (en) * 1982-02-22 1983-08-26 Toshiba Corp Processing method for insulating film
US4395304A (en) * 1982-05-11 1983-07-26 Rca Corporation Selective etching of phosphosilicate glass
JPS58204540A (en) * 1982-05-22 1983-11-29 Matsushita Electric Works Ltd Manufacture of semiconductor device
US4444618A (en) * 1983-03-03 1984-04-24 General Electric Company Processes and gas mixtures for the reactive ion etching of aluminum and aluminum alloys
US4547260A (en) * 1983-04-13 1985-10-15 Fujitsu Limited Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices
US4899767A (en) * 1984-05-21 1990-02-13 Cfm Technologies, Inc. Method and system for fluid treatment of semiconductor wafers
US4692205A (en) * 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US5012692A (en) * 1988-09-24 1991-05-07 Shimano Industrial Company Limited Change-speed lever apparatus for use in bicycle
US4971715A (en) * 1988-11-18 1990-11-20 International Business Machines Corporation Phenolic-free stripping composition and use thereof
US4985990A (en) * 1988-12-14 1991-01-22 International Business Machines Corporation Method of forming conductors within an insulating substrate
US4987101A (en) * 1988-12-16 1991-01-22 International Business Machines Corporation Method for providing improved insulation in VLSI and ULSI circuits
US4985113A (en) * 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
US4962049A (en) * 1989-04-13 1990-10-09 Applied Materials, Inc. Process for the plasma treatment of the backside of a semiconductor wafer
US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
US5082518A (en) * 1990-10-29 1992-01-21 Submicron Systems, Inc. Sparger plate for ozone gas diffusion
US5334332A (en) * 1990-11-05 1994-08-02 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
US5556482A (en) * 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US5217570A (en) * 1991-01-31 1993-06-08 Sony Corporation Dry etching method
US5475267A (en) * 1991-04-26 1995-12-12 Mitsubishi Denki Kabushiki Kaisha Multilayer interconnection structure for a semiconductor device
US5308440A (en) * 1991-09-05 1994-05-03 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor device with air-bridge interconnection
US5387361A (en) * 1991-10-09 1995-02-07 Sharp Kabushiki Kaisha Etching liquid for aluminium, method of etching aluminium and etched aluminium product
US5348619A (en) * 1992-09-03 1994-09-20 Texas Instruments Incorporated Metal selective polymer removal
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5338416A (en) * 1993-02-05 1994-08-16 Massachusetts Institute Of Technology Electrochemical etching process
US5431766A (en) * 1993-05-12 1995-07-11 Georgia Tech Research Corporation System for the photoelectrochemical etching of silicon in an anhydrous environment
US5348627A (en) * 1993-05-12 1994-09-20 Georgia Tech Reserach Corporation Process and system for the photoelectrochemical etching of silicon in an anhydrous environment
US5419779A (en) * 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US5544776A (en) * 1994-04-26 1996-08-13 Nec Corporation Composition in a liquid used for removing a photoresist film and method therefor
US5468342A (en) * 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5407860A (en) * 1994-05-27 1995-04-18 Texas Instruments Incorporated Method of forming air gap dielectric spaces between semiconductor leads
US5650041A (en) * 1994-06-17 1997-07-22 Texas Instruments Incorporated Semiconductor device fabrication method
US5533635A (en) * 1994-10-11 1996-07-09 Chartered Semiconductor Manufacturing Pte. Ltd. Method of wafer cleaning after metal etch
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
US5591299A (en) * 1995-04-28 1997-01-07 Advanced Micro Devices, Inc. System for providing integrated monitoring, control and diagnostics functions for semiconductor spray process tools
US5709756A (en) * 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US5780363A (en) * 1997-04-04 1998-07-14 International Business Machines Coporation Etching composition and use thereof
US5824601A (en) * 1997-06-30 1998-10-20 Motorola, Inc. Carboxylic acid etching solution and method

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
"Etching SiO2 Films In Aqueous 0.49% HF", Somashekhar et al, J. Electrochem. Soc., vol. 143, No. 9, pp. 2885-2891, Sep. 1996.
Anon, Flush Fluids for Ink Jet Ink Devices, Research Disclosure , Jan. 1991, No. 321. *
Anon, Flush Fluids for Ink Jet Ink Devices, Research Disclosure, Jan. 1991, No. 321.
El Kareh, B., Fundamentals of Semiconductor Processing Technologies , Kluwer Academic Publishers, Norwell, MA, 1995: 565 571. *
El-Kareh, B., Fundamentals of Semiconductor Processing Technologies, Kluwer Academic Publishers, Norwell, MA, 1995: 565-571.
Etching SiO 2 Films In Aqueous 0.49% HF , Somashekhar et al, J. Electrochem. Soc. , vol. 143, No. 9, pp. 2885 2891, Sep. 1996. *

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US6394114B1 (en) * 1999-11-22 2002-05-28 Chartered Semiconductor Manufacturing Ltd. Method for stripping copper in damascene interconnects
US6565664B2 (en) * 1999-11-22 2003-05-20 Chartered Semiconductor Manufacturing Ltd. Method for stripping copper in damascene interconnects
US6454868B1 (en) * 2000-04-17 2002-09-24 Electrochemicals Inc. Permanganate desmear process for printed wiring boards
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US20030235986A1 (en) * 2002-06-20 2003-12-25 Wolfgang Sievert Silicon oxide etching compositions with reduced water content
US20040192046A1 (en) * 2002-06-20 2004-09-30 Honeywell International, Inc. Highly selective silicon oxide etching compositions
US7833957B2 (en) 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
US20050143270A1 (en) * 2003-10-28 2005-06-30 Sachem, Inc. Cleaning solutions and etchants and methods for using same
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US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
US20110046036A1 (en) * 2008-02-29 2011-02-24 Gemmill William R Post Plasma Etch/Ash Residue and Silicon-Based Anti-Reflective Coating Remover Compositions Containing Tetrafluoroborate Ion
US8168577B2 (en) 2008-02-29 2012-05-01 Avantor Performance Materials, Inc. Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
US20090253268A1 (en) * 2008-04-03 2009-10-08 Honeywell International, Inc. Post-contact opening etchants for post-contact etch cleans and methods for fabricating the same
US8642475B2 (en) 2010-12-21 2014-02-04 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with reduced polysilicon residue and method of manufacture thereof
US20130302512A1 (en) * 2012-05-09 2013-11-14 Amedica Corporation Methods for altering the surface chemistry of biomedical implants and related apparatus
US9925295B2 (en) 2012-05-09 2018-03-27 Amedica Corporation Ceramic and/or glass materials and related methods
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