US6163557A - Fabrication of group III-V nitrides on mesas - Google Patents
Fabrication of group III-V nitrides on mesas Download PDFInfo
- Publication number
- US6163557A US6163557A US09/082,154 US8215498A US6163557A US 6163557 A US6163557 A US 6163557A US 8215498 A US8215498 A US 8215498A US 6163557 A US6163557 A US 6163557A
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- US
- United States
- Prior art keywords
- mesas
- mesa
- substrate
- gan
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000010408 film Substances 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 72
- 239000010980 sapphire Substances 0.000 claims abstract description 72
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 36
- 239000012528 membrane Substances 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000005336 cracking Methods 0.000 abstract description 16
- 230000005693 optoelectronics Effects 0.000 abstract description 11
- 230000035882 stress Effects 0.000 description 12
- 238000005253 cladding Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000003754 machining Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011029 spinel Substances 0.000 description 4
- 229910052596 spinel Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007431 microscopic evaluation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
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- 230000006798 recombination Effects 0.000 description 1
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- 239000002470 thermal conductor Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Abstract
Description
Claims (36)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US09/082,154 US6163557A (en) | 1998-05-21 | 1998-05-21 | Fabrication of group III-V nitrides on mesas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/082,154 US6163557A (en) | 1998-05-21 | 1998-05-21 | Fabrication of group III-V nitrides on mesas |
Publications (1)
Publication Number | Publication Date |
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US6163557A true US6163557A (en) | 2000-12-19 |
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US09/082,154 Expired - Lifetime US6163557A (en) | 1998-05-21 | 1998-05-21 | Fabrication of group III-V nitrides on mesas |
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Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
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US6274518B1 (en) * | 1999-04-14 | 2001-08-14 | Matsushita Electronics Corporation | Method for producing a group III nitride compound semiconductor substrate |
US6379985B1 (en) * | 2001-08-01 | 2002-04-30 | Xerox Corporation | Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
US6501154B2 (en) * | 1997-06-03 | 2002-12-31 | Sony Corporation | Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure |
US20030062526A1 (en) * | 2001-10-02 | 2003-04-03 | Xerox Corporation | Substrates having increased thermal conductivity for semiconductor structures |
US6617261B2 (en) | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
US6680959B2 (en) * | 2000-07-18 | 2004-01-20 | Rohm Co., Ltd. | Semiconductor light emitting device and semiconductor laser |
US20040069212A1 (en) * | 2002-10-10 | 2004-04-15 | Neudeck Philip G. | Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations |
US6815656B1 (en) | 2001-03-01 | 2004-11-09 | Lauer Mark A | Integrated optical cross-connect amplifier |
US20050001227A1 (en) * | 2001-07-24 | 2005-01-06 | Nichia Corporation | Semiconductor light-emitting device |
US6903392B2 (en) * | 1997-05-28 | 2005-06-07 | Sony Corporation | Semiconductor device and its manufacturing method |
US6967981B2 (en) * | 2002-05-30 | 2005-11-22 | Xerox Corporation | Nitride based semiconductor structures with highly reflective mirrors |
US20060245463A1 (en) * | 2005-03-29 | 2006-11-02 | Hashimoto Jun-Ichi | Semiconductor optical amplifier |
US20080008964A1 (en) * | 2006-07-05 | 2008-01-10 | Chia-Hua Chan | Light emitting diode and method of fabricating a nano/micro structure |
US20080050889A1 (en) * | 2006-08-24 | 2008-02-28 | Applied Materials, Inc. | Hotwall reactor and method for reducing particle formation in GaN MOCVD |
US20080099767A1 (en) * | 2006-09-13 | 2008-05-01 | Rohm Co., Ltd. | Gan related compound semiconductor element and process for producing the same and device having the same |
US20080135852A1 (en) * | 2004-11-18 | 2008-06-12 | Showa Denko K.K. | Gallium Nitride-Based Semiconductor Stacked Structure, Method for Fabrication Thereof,Gallium Nitride-Based Semiconductor Device and Lamp Using the Device |
EP1227175A3 (en) * | 2001-01-29 | 2009-07-15 | Panasonic Corporation | Method of manufacturing nitride semiconductor substrate |
US20090325334A1 (en) * | 2000-12-18 | 2009-12-31 | Samsung Electro-Mechanics Co., Ltd. | GaN BASED GROUP III-V NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME |
US20100197055A1 (en) * | 2003-08-19 | 2010-08-05 | Hisanori Tanaka | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth |
US20100237382A1 (en) * | 2007-10-23 | 2010-09-23 | Hidenori Kamei | Semiconductor light emitting element, semiconductor light emitting device using the element, and method for manufacturing the device |
US20100273331A1 (en) * | 2006-07-05 | 2010-10-28 | National Central University | Method of fabricating a nano/micro structure |
US7868340B2 (en) | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
US20110012109A1 (en) * | 2009-07-17 | 2011-01-20 | Applied Materials, Inc. | Method of forming a group iii-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (hvpe) |
US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
US20110027974A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Indium surfactant assisted hvpe of high quality gallium nitride and gallium nitride alloy films |
US20110159615A1 (en) * | 2009-12-28 | 2011-06-30 | Hon Hai Precision Industry Co., Ltd. | Led units fabrication method |
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WO2012138821A2 (en) * | 2011-04-08 | 2012-10-11 | Lux Material Co., Ltd. | Reusable substrates for electronic device fabrication and methods thereof |
US20140116327A1 (en) * | 2011-05-31 | 2014-05-01 | "Perfect Crystals" Limited Liability Company | Method and apparatus for fabricating free-standing group iii nitride crystals |
JP2017216484A (en) * | 2010-03-04 | 2017-12-07 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Semi-polar group iii nitride optoelectronic device on m-plane substrate with miscut less than +/-15 degrees in c-direction |
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US10707308B2 (en) | 2017-12-24 | 2020-07-07 | HangZhou HaiCun Information Technology Co., Ltd. | Hetero-epitaxial output device array |
US20200224331A1 (en) * | 2019-01-08 | 2020-07-16 | SLT Technologies, Inc | High quality group-iii metal nitride crystals, methods of making, and methods of use |
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US11453956B2 (en) | 2010-06-18 | 2022-09-27 | Slt Technologies, Inc. | Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate |
US11661670B2 (en) | 2020-01-16 | 2023-05-30 | SLT Technologies, Inc | High quality group-III metal nitride seed crystal and method of making |
US11705322B2 (en) | 2020-02-11 | 2023-07-18 | Slt Technologies, Inc. | Group III nitride substrate, method of making, and method of use |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614435A (en) * | 1994-10-27 | 1997-03-25 | The Regents Of The University Of California | Quantum dot fabrication process using strained epitaxial growth |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
-
1998
- 1998-05-21 US US09/082,154 patent/US6163557A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614435A (en) * | 1994-10-27 | 1997-03-25 | The Regents Of The University Of California | Quantum dot fabrication process using strained epitaxial growth |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
Non-Patent Citations (16)
Title |
---|
Cope et al, Surfactants in Epitaxial Growth, vol. 63, No. 6, Aug. 7, 1989, 632 635. * |
Cope et al, Surfactants in Epitaxial Growth, vol. 63, No. 6, Aug. 7, 1989, 632-635. |
J. Electrochem Soc.: SOLID STATE SCIENCE AND TECHNOLOGY, vol. 130, No. 10, Oct. 1983, The Mechanism of Orientation in Si Graphoepitaxy by Laser of Strip Heater Recrystallization , Henry I. Smith, et al., pp. 2050 2053. * |
J. Electrochem Soc.: SOLID--STATE SCIENCE AND TECHNOLOGY, vol. 130, No. 10, Oct. 1983, "The Mechanism of Orientation in Si Graphoepitaxy by Laser of Strip Heater Recrystallization", Henry I. Smith, et al., pp. 2050-2053. |
J. Vac. Sci. Technol B 14(3), May/Jun. 1996, "Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls", K. Kamath et al., pp. 2312-2314. |
J. Vac. Sci. Technol B 14(3), May/Jun. 1996, Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls , K. Kamath et al., pp. 2312 2314. * |
J. Vac. Sci. Technol. . , 15(3), May/Jun. 1978, "Surface relief gratings of 3200--Åperiod fabrication techniques and influence on thin-film growth", D.C. Flanders, et al., pp.1001-1003. |
J. Vac. Sci. Technol. . , 15(3), May/Jun. 1978, Surface relief gratings of 3200 period fabrication techniques and influence on thin film growth , D.C. Flanders, et al., pp.1001 1003. * |
J. Vac. Sci. Technol. B 12(6), Nov./Dec. 1994, "Threading dislocations in GaAs grown with free sidewalls on Si mesas" J. Knall et al., pp. 3069-3074. |
J. Vac. Sci. Technol. B 12(6), Nov./Dec. 1994, Threading dislocations in GaAs grown with free sidewalls on Si mesas J. Knall et al., pp. 3069 3074. * |
J. Vac. Sci. Technol. B 13(6), Nov./Dec. 1995, "First--order gain--coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowth", Andreas Orth et al., pp. 2714-2717. |
J. Vac. Sci. Technol. B 13(6), Nov./Dec. 1995, First order gain coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowth , Andreas Orth et al., pp. 2714 2717. * |
Nature: International weekly journal of science, vol. 386, No. 27, Mar. 1997, "Nitride--based semiconductors for blue and green light--emitting devices", F.A. Ponce et al., pp. 351-359. |
Nature: International weekly journal of science, vol. 386, No. 27, Mar. 1997, Nitride based semiconductors for blue and green light emitting devices , F.A. Ponce et al., pp. 351 359. * |
Stucky et al, Quantum Confinement & Host/Guest Chemestry: Probing a New Dimension, Science, vol. 247, Feb. 9, 1990, Articles 669 978. * |
Stucky et al, Quantum Confinement & Host/Guest Chemestry: Probing a New Dimension, Science, vol. 247, Feb. 9, 1990, Articles 669-978. |
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