US6175421B1 - Method and apparatus for measuring material properties using transient-grating spectroscopy - Google Patents
Method and apparatus for measuring material properties using transient-grating spectroscopy Download PDFInfo
- Publication number
- US6175421B1 US6175421B1 US09/318,323 US31832399A US6175421B1 US 6175421 B1 US6175421 B1 US 6175421B1 US 31832399 A US31832399 A US 31832399A US 6175421 B1 US6175421 B1 US 6175421B1
- Authority
- US
- United States
- Prior art keywords
- beams
- sample
- sub
- generates
- excitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0666—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using an exciting beam and a detection beam including surface acoustic waves [SAW]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
- G01B21/085—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness using thermal means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
Definitions
- This invention relates to optical systems for measuring properties of a sample, e.g., the thickness of a thin film.
- FWM four-wave mixing
- two excitation laser beams are overlapped in time and space on a sample s surface to form a spatially varying optical interference pattern.
- the pattern consists of alternating “light” (i.e., constructive interference) and “dark” (i.e., destructive interference) regions; the spacing between these regions depends on the wavelength of the laser beams and the angle therebetween.
- impulsive stimulated thermal scattering the excitation laser beam contains a series of short (e.g., a few hundred picoseconds) optical pulses.
- pulses of radiation are absorbed by the sample in the light regions, but not in the dark regions, to excite a “transient grating”.
- This process heats and thermally expands the irradiated regions to launch coherent, counter-propagating acoustic waves whose wavelength and direction match those of the interference pattern.
- ISTS is used to measure strongly absorbing films (e.g., metal films)
- the acoustic waves generate a time-dependent “ripple” on the film's surface that oscillates at the acoustic frequency.
- a probe beam diffracts off the transient grating to form a series of signal beams, each of which represents a different diffracted order (e.g, the +/ ⁇ 1 and +/ ⁇ 2 orders).
- the signal beams oscillate in intensity at the acoustic frequency.
- One of the signal beams is detected and monitored to measure the properties of the sample.
- a single excitation beam passes through a beam-splitter to form two excitation beams of roughly equal intensity.
- An imaging system e.g., a lens
- beam-delivery systems that generate two excitation beams, such as those using beam-splitters, suffer drawbacks. For example, these systems often have a relatively long depth of focus, i.e., the beams are overlapped for a relatively long distance. This makes it difficult to position the sample in the exact image plane of the imaging system.
- Another disadvantage is that the diffraction efficiency of the transient grating formed by two excitation beams is often quite small (e.g., on the order of 10 ⁇ 4 ⁇ 10 ⁇ 5 ). This means that the diffracted signal beam is often weak and difficult to measure. A weak signal beam, in turn, makes it difficult to precisely measure the acoustic frequency and any corresponding property (e.g., film thickness).
- a beam-delivery system includes a phase mask that generates three beams, rather than two, to form the transient grating in the sample.
- the three beams are equally spaced in a linear fashion (i.e., the center, right, and left beams) prior to being imaged onto the sample.
- the center beam When focused with an imaging system, the center beam propagates down a central optical axis of the beam-delivery system, while the right and left beams converge toward the same spot at the same angle but on opposite sides of the center beam.
- the beams are overlapped on the sample so that two different transient gratings are simultaneously formed: (1) a grating is formed by the center beam and each of the right and left beams; and (2) a grating is formed by the right and left beams.
- the laser beams forming these gratings are separated by different angles (i.e., ⁇ and ⁇ /2), and thus they have different spatial frequencies and will simultaneously excite acoustic waves having different acoustic frequencies.
- the excitation laser beam is collimated prior to irradiating the phase mask that generates the excitation beams. Collimating the beam in this way reduces variations in the distance separating the light and dark regions of the interference pattern. This consequently improves the precision to which the acoustic wave is measured in the sample.
- multiple diffracted signal beams, rather than just a single beam, are collected and imaged onto the photodetector. This increases the intensity of the measured signal and thus further improves the precision of the measurement.
- the invention provides an apparatus for measuring a property (e.g., thickness) of a sample that includes: 1) an excitation laser that generates an excitation laser beam; 2) a beam-delivery system, aligned along an optical axis, that separates the excitation laser beam into at least three sub-beams; 3) an imaging system aligned along the optical axis that collects the sub-beams and focuses them onto the sample to form an optical interference pattern that generates a time-dependent response in the sample; 4) a probe laser that generates a probe laser beam oriented to diffract off the time-dependent response to form at least one signal beam; 5) a detector that detects at least one signal beam (and in some cases, two signal beams) and in response generates a radiation-induced electronic response; and 6) a processor that processes the radiation-induced electronic response to determine the property of the sample.
- a property e.g., thickness
- the three sub-beams are generated with a transmissive phase mask, and one of the sub-beams propagates along the optical axis of the optical system.
- the phase mask may contain a pattern that is oriented along the optical axis and partially diffracts the excitation laser beam to form at least two of the sub-beams, and partially transmits the excitation laser beam to form the remaining sub-beam.
- the sub-beam transmitted by the pattern is oriented along the optical axis of the optical system, and the diffracted sub-beams are oriented on each side of the transmitted sub-beam.
- Each of the sub-beams diffracted by the pattern has a roughly equal intensity that is typically between 20% and 40% of the excitation laser beam, and the sub-beam transmitted by the pattern has an intensity that is between 20% and 60% of the excitation laser beam.
- the interference pattern contains interference fringes separated by a distance of between 3 and 20 microns.
- Such an interference pattern is generated with a phase mask that contains multiple patterns, each of which generates sub-beams that diverge from the phase mask at a different angle.
- an apparatus in another aspect, includes: 1) an excitation laser that generates an excitation laser beam; 2) a beam-delivery system, aligned along an optical axis, that separates the excitation laser beam into at least two sub-beams; 3) an imaging system aligned along the optical axis that collects the two sub-beams and focuses them onto the sample to form an optical interference pattern that generates a time-dependent response in the sample; 4) a probe laser that generates a probe laser beam oriented to diffract off the time-dependent response to form at least two signal beams; 5) an optic oriented in the optical axis that transmits the excitation sub-beams, reflects the probe beam towards the sample, and reflects at least one signal beam; 6) a detector that detects at least one signal beam and in response generates a radiation-induced electronic response; and 7) a processor that processes the radiation-induced electronic response to determine the property of the sample.
- the optic is a beam-splitter oriented to reflect
- the apparatus described above measures a property of a sample, such as film thickness, film delamination, thermal diffusivity, elastic moduli, loss moduli, and concentration of implanted ions. These properties can be measured from a wide range of samples, e.g., metal thin films, semiconductor films, semiconductor substrates, and polymeric materials.
- the apparatus accurately positions a sample along an optical axis.
- the apparatus generates a data set by measuring data at a number of positions along the optical axis, and then processes the data set to position the sample along the optical axis.
- the processing step includes fitting the data set with a function, e.g., a Gaussian or Lorentzian function or a derivative or analog thereof.
- the improved optical systems described above reduces measurement errors and increases signal strengths when compared to existing systems used in FWM measurements.
- the three-beam system has a relatively sharp effective depth of focus (i.e., depth of field), making it possible to position a sample precisely in the image plane of the imaging system. This minimizes errors in the measurement that are associated with incorrectly positioning the sample along the focus. Measurement errors caused by incorrect positioning are even further reduced by collimating the excitation beam prior to irradiating the phase mask.
- the three-beam optical system simultaneously excites and measures two acoustic frequencies in a sample, two data points can be collected in the time normally required to collect one data point. This reduces the time required to make ISTS measurements requiring multiple data points.
- the system also increases the magnitude of the measured signal waveform. For example, the diffraction efficiency of a transient grating formed with three beams is large relative to that formed with only two beams. This increases the magnitude of each the diffracted signal beams.
- the signal measured with the photodetector is even further increased by collecting multiple signal beams, rather than just a single beam. These improvements result in better signal-to-noise ratios in the measured data, and thus increase the precision of an ISTS-based measurement.
- FIG. 1 is a schematic drawing of the excitation, probe, and signal beams used in a three-beam optical system
- FIG. 2 is a front view of a beam-delivery system that includes a phase mask that diffracts an incident excitation laser beam to form three sub-beams;
- FIG. 3 is a plot of the signal waveform amplitude measured from an aluminum film as a function of the distance the sample is placed from the focus of an imaging system (z) for the two-beam and three-beam optical systems;
- FIG. 4 is a plot of the signal waveform amplitude measured from a ti:tungsten film as a function of z for the two-beam and three-beam optical systems;
- FIG. 5 is a plot showing the signal waveform amplitude measured from an aluminum film as a function of z using the three-beam optical system
- FIGS. 6A and 6B are time and frequency-domain plots of a signal waveform measured with a three-beam optical system from, respectively, aluminum and ti:nitride films;
- FIG. 7 is a schematic drawing of a three-beam optical system for measuring a property of a sample with ISTS.
- FIG. 8 is a schematic drawing of a modified three-beam optical system for measuring a property of a sample with ISTS.
- FIG. 1 shows a three-beam configuration 11 that measures a property (e.g., film thickness) of a sample 10 using ISTS.
- a property e.g., film thickness
- three excitation sub-beam beams 12 a-c are overlapped in time and space on the sample s surface to generate a transient grating.
- the three-beam configuration 11 features: (1) a center sub-beam 12 c that propagates along an optical axis 23 ; and (2) left 12 a and right 12 b sub-beams that converge on the sample s surface at an angle of ⁇ /2 relative to the optical axis.
- the left 12 a and right 12 b sub-beams have roughly equal intensity (typically between 20% and 40% of the incident excitation laser beam) that is typically greater than that of the center sub-beam 12 c. All sub-beams are separated from an incident laser beam generated from an excitation laser (not shown in the figure). Each beam contains a short laser pulse typically having a duration of a few hundred picoseconds and a wavelength (typically in the infrared or visible spectral regions) that is strongly absorbed by the sample.
- the three optical excitation beams interfere to form a spatially varying interference pattern 15 containing alternating light (constructive interference) 17 and dark (destructive interference) 19 regions.
- ISTS radiation is absorbed strongly by the sample 10 in the light regions 17 , but not in the dark regions 19 .
- the absorbed radiation impulsively heats the sample in those regions during the short duration of the excitation pulse and initiates a time-dependent acoustic response that has been described in detail in the above-mentioned references. This response is measured in its entirety by irradiating sample near or on the interference pattern 15 with a probe pulse 20 .
- the probe pulse 20 (typically several hundred microseconds) is longer than the duration of the time-dependent response, and is partially reflected to form a reflected beam 20 , and partially diffracted to form a pair of signal beams 25 a, 25 b that are the +1 and ⁇ 1 diffracted orders of the transient grating. Higher diffracted orders (e.g., the +/ ⁇ 2, +/ ⁇ 3 orders) are also formed, but are weaker than the +/ ⁇ 1 orders. At least one of the signal beams is detected with a photodetector (not shown in the figure) to generate a signal waveform. The signal waveform is then analyzed to measure a property of the sample.
- a photodetector not shown in the figure
- the three sub-beams 12 a-c are focused onto the sample with an imaging system that overlaps them in a cylinder-shaped volume having a long axis (called the Raleigh length) that increases with the focal length of the imaging system and the wavelength of the sub-beams.
- the magnitude of the Raleigh length determines the sharpness of the imaging system s focus: a relatively short Raleigh length indicates a sharp focus. Only when the sample is positioned along the Raleigh length will the sub-beams be overlapped to form a transient grating on its surface. Thus, a signal waveform is only measured when the sample is positioned along the Raleigh length.
- the spatial periodicity (i.e., the distance between the light and dark regions) of the interference pattern can vary slightly, causing changes in the frequency of the excited acoustic wave. Since many properties of the sample can be calculated from this frequency, such a variation can result in an erroneous measurement, even when the sample appears to be properly positioned. It is therefore desirable to have a beam-delivery system that: 1) generates beams that are sharply focused over a short Raleigh length; and 2) minimizes the dependence of frequency on the sample s position within the Rayliegh length.
- FIG. 2 shows beam-delivery system 9 that realizes both of these improvements.
- the system 9 includes a phase mask 62 containing a diffracting pattern 66 that generates the excitation sub-beams 12 a-c.
- an incident optical excitation beam 12 is focused along the x axis onto the pattern 66 using a cylindrical lens 64 .
- the beam 12 is well collimated along the y axis using a collimating lens 60 .
- the pattern partially diffracts the incident beam into the +1 and ⁇ 1 orders (to form the left 12 a and right 12 b sub-beams) and partially transmits the incident beam 12 to generate the center sub-beam 12 c.
- a phase mask typically contains multiple patterns 67 , each of which diffracts sub-beams at a different angle and thus forms a different interference pattern on the sample.
- the diffraction pattern 66 is typically an alternating series of grooves etched into a glass substrate.
- the depth of the grooves relative to the wavelength of the incident radiation determines how much radiation is diffracted into to sub-beams, while the periodicity of the grooves determines the angle at which the sub-beams emerge from the pattern.
- the depth of the grooves is chosen to be slightly less than optimal so that some of the incident radiation passes directly through the mask, rather than being diffracted into the non-zeroth orders.
- the figures show, respectively, data measured from aluminum and ti:tungsten, two films commonly used in the microelectronics industry.
- the data show a relatively strong dependence of the signal magnitude on z for the three-beam configuration, indicating the relatively sharp focus of this configuration.
- FWHM full-width, half-maximum
- the magnitude of the signal generated in the two-beam configuration has a relatively weak dependence on z: the FWHM is greater than 300 microns.
- the dependence of the signal waveform amplitude on z is bi-modal, making it even more difficult to determine the exact position of the image plane of the two-beam configuration.
- FIGS. 3 and 4 indicate how the overall magnitude of the diffracted signal is larger in the three-beam configuration than in the two-beam configuration.
- the maximum signal waveform amplitude for the three-beam configuration is roughly 3 times that measured using the two-beam configuration.
- the signal waveform amplitude is increased by nearly a factor of 5 for the three-beam configuration. The measurements for the two configurations were carefully monitored to ensure that factors that might otherwise affect the signal amplitude, such as laser pulse energy and acoustic wavelength, were identical.
- FIG. 5 shows the signal waveform amplitude for the three-beam configuration plotted as a function of z along the entire Raleigh length of the imaging system.
- I 0 is the intensity of the zeroth order beam
- I +/ ⁇ 1 is the intensity of the right and left sub-beams
- k 2 ⁇ / ⁇
- ⁇ is the wavelength of the excitation beam
- ⁇ /2 is the angle between the right and left sub-beams and the optical axis
- ⁇ 0 is the phase shift associated with the phase mask (typically ⁇ /1.3 for a phase mask that generates three beams, and ⁇ for a phase mask that generates two beams).
- Equation 1 neglects the Gaussian envelope that describes the intensity distribution of most laser beams; this effect can be included simply be multiplying the equation by a Gaussian function.
- Eqn. 1 indicates that the spatial frequency f D(x,z) is proportional to:
- the effective focus of the imaging system is sharpened by decreasing this frequency, i.e., increasing the angle of the diffracted sub-beams. This is done by increasing the periodicity of the grooves in the diffracting mask.
- the value of D(x,z) at this position is nearly 50% larger than the maximum value of D(x,z) for the two-beam configuration that occurs at the image plane.
- data like that shown in FIG. 5 can be fit to determine where to properly position the sample.
- the central peak in the data ( 30 in FIG. 5) is determined and then fit to a Gaussian function.
- the z value that gives the best fit indicates the optimal location for the sample, i.e., the position that maximizes the diffraction efficiency of the grating pattern.
- the three-beam mask can also be used to increase the rate of data collection.
- a transient grating formed by overlapping two laser beams will have a periodicity T of
- FIGS. 6A and 6B illustrate this point, showing signal waveforms plotted in the time and frequency domains measured using ISTS in the three-beam configuration. The data were collected from aluminum (FIG. 6A) and ti:nitride (FIG.
- each frequency can be analyzed to determine a property (e.g., film thickness) of the sample being measured; analyzing two frequencies therefore increases the accuracy to which the property is determined.
- a property e.g., film thickness
- simultaneous measurement of two frequencies significantly expedites the measurement process.
- FIG. 7 shows an optical system 50 that uses the three-beam configuration to measure the properties of a sample 10 using ISTS.
- a similar system for making these measurements is described in SIMPLIFIED DEVICE AND METHOD FOR TIME-RESOLVED OPTICAL MEASUREMENTS (U.S. Ser. No. 08/377,310, filed Jan. 24, 1995).
- the system 50 includes an excitation laser 52 that generates sub-nanosecond optical pulses that initiate the time-dependent responses in the sample 10 , and a probe laser 54 that measures these responses.
- the excitation laser for example, can be a Q-switched Nd:YAG laser such as that described in U.S. Pat. No. 5,393,413.
- the probe laser for example, can be a modulated diode laser.
- the excitation laser 52 generates a beam 12 that is separated into three sub-beams 12 a-c with a beam-delivery system 9 .
- the beam-delivery system 9 includes a first collimating lens 60 that collimates the beam 12 , and a cylindrical lens 64 that focuses the beam along one axis onto a phase mask 62 .
- a portion of the beam 12 is reflected by a glass cover slip 65 and detected with a low-speed photodetector 67 that generates an electrical pulse for triggering a data-acquisition system (not shown in the figure).
- the phase mask includes a series of patterns 66 , each of which generates a different interference pattern 15 on the sample 10 .
- the excitation beam 12 is partially diffracted into sub-beams 12 a, 12 b, and partially transmitted to form sub-beam 12 c.
- Higher diffracted orders are typically generated by the phase mask and are spatially filtered using a beam block (not shown in the figure).
- Sub-beams 12 a, 12 b diverge at an angle ⁇ /2 relative to sub-beam 12 c, which is transmitted along an optical axis 23 of the system.
- the angle of divergence of the diffracted sub-beams 12 a,b determines the periodicity of the interference pattern as described in equation 1, above.
- a first imaging lens pair 70 collects the three sub-beams 12 a-c and focuses and overlaps them onto the surface 49 of the sample 10 to form the interference pattern 15 .
- Absorption of the pattern 68 initiates an acoustic wave through ISTS.
- Different grating patterns are formed on the sample simply by translating the phase mask 62 so that a new pattern is irradiated with the incident excitation beam 12 .
- the probe laser 54 generates a probe pulse 20 that is collimated with a second collimating lens 55 and focused onto the interference pattern 15 with a second spherical lens 71 to measure the time-dependent response of the sample. As described above, this response diffracts a portion of the probe pulse 20 to form a signal beam 25 b.
- a beam-stop 81 blocks a reflected portion 20 of the probe beam.
- a second imaging lens 76 collects the signal beam 25 b and focuses it onto a high-speed (e.g., 1 GHz) photodetector 80 to generate a signal waveform. The waveform is then analyzed with a computer (not shown in the figure) to determine a property of the sample.
- FIG. 8 shows another optical system 100 for performing ISTS measurements using either the two-beam or three-beam configuration.
- This system includes fewer optics and occupies less space than the system shown in FIG. 7, and can therefore be used to make measurements in environments that require compact instrumentation.
- the system 100 could be attached directly to a tool used during fabrication of a microelectronic device, such as a metal-film deposition chamber, to make in situ measurements.
- a tool used during fabrication of a microelectronic device such as a metal-film deposition chamber
- the system 100 includes a phase mask 162 and pattern 166 that diffracts an incident beam 112 into three sub-beams 112 a-c as described above.
- the sub-beams 112 a-c pass through a beam-splitter 113 coated to only reflect a probe laser beam 120 .
- a lens pair 170 collects the sub-beams 112 a-c and overlaps them onto a sample 110 to form an interference pattern 115 that generates acoustic waves through ISTS as described above.
- the acoustic waves are measured with the probe beam 120 that first passes through a clear hole 139 drilled into a mirror 140 .
- the beam-splitter 113 then reflects the probe beam 120 so that it is collinear with the center excitation sub-beam 112 c and passes through the lens pair 170 , where it is focused onto the interference pattern 115 .
- the probe beam 120 is diffracted to form a pair of signal beams 125 a,b that propagate back through the lens pair 170 and are reflected by the beam-splitter 113 onto opposite sides of the clear hole 139 drilled into the mirror 140 .
- the mirror reflects both signal beams 125 a,b into a photodetector that in response generates a signal waveform that is analyzed as described above.
- the excitation laser beam is pulsed, and may be generated using a light source which is Q-switched, mode-locked, or both.
- the pulse duration must be short enough to impulsively stimulate material motions in the film.
- the output pulse typically has a duration of between 100 picoseconds and 1 nanosecond.
- the energy of the output pulse is typically between 3 and 20 microjoules.
- the repetition rate of the pulses must be high enough to allow suitable data averaging (when necessary), but low enough to allow the thermal properties of the sample to recover between laser shots.
- the repetition rate is between 1 and 2000 Hz, with the rate being adjusted for measurement of different types of samples. For samples which easily damage, such as thin metal films, it may be desirable to reduce the repetition rate of the excitation laser.
- the time-dependent properties of the sample are recorded by monitoring the time-dependent diffraction of the probe pulse, which is typically derived from a single-mode laser producing between 0.1 and 1 Watt peak power in the visible or infrared frequency range.
- the pulse typically has a temporal duration on the order of between 1 and 100 microseconds.
- a continuous-wave (cw) probe beam can be used.
- Nd:YAG lasers Light sources other than Nd:YAG lasers may be used to optically excite the film. Suitable lasers include, among others, Nd:YLF, ion (e.g., argon and krypton), Ti:Sapphire, diode, CO 2 , holmium, excimer, dye, and metal-vapor lasers. Similarly, light sources other than diode lasers may be used as the probe laser. Alternative lasers include ion lasers. Pulsed light sources which may be used to generate the probe beam include Q-switched Nd:YAG, Nd:YLF, Ti:Sapphire, diode, CO 2 , holmium, excimer, dye, and metal-vapor lasers.
- optical elements other than transmissive phase masks can be used to generate the excitation sub-beams.
- amplitude masks i.e., a mask that uses opaque bars rather than transparent grooves to diffract radiation
- phase and amplitude and phase masks operating in a reflective mode can be used, as can phase and amplitude and phase masks operating in a reflective mode.
- a series of beam-splitters and optical delay lines known in the art can be used to generate the excitation sub-beams.
- the samples which may be monitored with the method and apparatus described herein may be bulk (e.g., solids such as metal or semiconductors), thin films (e.g., polymer, semiconductor, or metal films), fluids, surfaces or other samples exhibiting time-dependent material motions.
- Typical samples include metal films used in the semiconductor industry, such as aluminum, tungsten, titanium, ti:tungsten, ti:nitride, chromium, and cobalt films.
- the material properties that can be determined in these samples include mechanical, physical (e.g., thickness), elastic, (depth-dependent and/or anisotropic) diffusive, adhesion-based, thermal (e.g., thermal diffusivities) and viscous properties associated with the damping of acoustic waves.
- electron relaxation lifetimes, electron-hole recombination times, exciton lifetimes, and bi-exciton lifetimes may additionally be determined in, for example, metal and semiconductor samples.
- the dispersion of the acoustic properties allows the frequency dependence of the mechanical (e.g., bulk or shear) modulus to be determined. Additionally, measurement of the thermal diffusion dynamics allows the thermal diffusivity for the acoustic information that is obtained allows determination of the degree of adhesion, delamination properties, and the elastic, shear, and longitudinal moduli, as well as anisotropies in these properties. Depth-dependent properties and residual stresses in thin films can also be determined.
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/318,323 US6175421B1 (en) | 1997-06-30 | 1999-05-25 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/885,555 US6016202A (en) | 1997-06-30 | 1997-06-30 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
US09/318,323 US6175421B1 (en) | 1997-06-30 | 1999-05-25 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/885,555 Division US6016202A (en) | 1997-06-30 | 1997-06-30 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
Publications (1)
Publication Number | Publication Date |
---|---|
US6175421B1 true US6175421B1 (en) | 2001-01-16 |
Family
ID=25387177
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/885,555 Expired - Fee Related US6016202A (en) | 1997-06-30 | 1997-06-30 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
US09/318,322 Expired - Fee Related US6075602A (en) | 1997-06-30 | 1999-05-25 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
US09/318,323 Expired - Fee Related US6175421B1 (en) | 1997-06-30 | 1999-05-25 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/885,555 Expired - Fee Related US6016202A (en) | 1997-06-30 | 1997-06-30 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
US09/318,322 Expired - Fee Related US6075602A (en) | 1997-06-30 | 1999-05-25 | Method and apparatus for measuring material properties using transient-grating spectroscopy |
Country Status (4)
Country | Link |
---|---|
US (3) | US6016202A (en) |
EP (1) | EP0922197A4 (en) |
JP (1) | JP2001500975A (en) |
WO (1) | WO1999000639A1 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020093648A1 (en) * | 2000-09-20 | 2002-07-18 | Mehrdad Nikoonahad | Methods and systems for determining an implant characterstic and a presence of defects on a specimen |
US20020107650A1 (en) * | 2000-09-20 | 2002-08-08 | Dan Wack | Methods and systems for determining a critical dimension and a presence of defects on a specimen |
US20020106848A1 (en) * | 2000-09-20 | 2002-08-08 | Dan Wack | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
US20020180961A1 (en) * | 2000-09-20 | 2002-12-05 | Dan Wack | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
US20020180986A1 (en) * | 2000-09-20 | 2002-12-05 | Mehrdad Nikoonahad | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
US6587794B1 (en) * | 1999-07-30 | 2003-07-01 | Koninklijke Philips Electronics N.V. | Method for measuring thin metal films |
US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
US20040115843A1 (en) * | 2000-09-20 | 2004-06-17 | Kla-Tencor, Inc. | Methods and systems for determining a presence of macro defects and overlay of a specimen |
US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
US6813941B2 (en) | 2001-12-20 | 2004-11-09 | Kimberly-Clark Worldwide, Inc. | Method to measure tension in a moving web and to control properties of the web |
US20040246485A1 (en) * | 2003-06-09 | 2004-12-09 | Behzad Imani | Far-field measurement of properties of metallic thin films |
US20070024871A1 (en) * | 2002-12-13 | 2007-02-01 | Alexei Maznev | Method and apparatus for measuring thickness of thin films via transient thermoreflectance |
US20080123080A1 (en) * | 2003-06-24 | 2008-05-29 | Advanced Metrology Systems Llc | Method of Measuring Sub-Micron Trench Structures |
US7751046B2 (en) | 2000-09-20 | 2010-07-06 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
WO2017222670A1 (en) * | 2016-06-22 | 2017-12-28 | University Of Virginia Patent Foundation | Fiber-optic based material property measurement system and related methods |
US10228284B2 (en) | 2015-08-20 | 2019-03-12 | Massachusetts Institute Of Technology | Devices and methods for sensing targets using photothermal speckle detection |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6795198B1 (en) * | 1998-05-28 | 2004-09-21 | Martin Fuchs | Method and device for measuring thin films and semiconductor substrates using reflection mode geometry |
US7342665B2 (en) * | 1998-06-30 | 2008-03-11 | Drake Jr Thomas E | System and method for control of paint thickness |
US7612890B2 (en) * | 1998-06-30 | 2009-11-03 | Lockheed Martin Corporation | System and method for controlling wafer temperature |
US7545509B2 (en) * | 1998-06-30 | 2009-06-09 | Lockheed Martin Corporation | System and method for online control of paper elasticity and thickness |
US7286241B2 (en) * | 1999-06-24 | 2007-10-23 | Lockheed Martin Corporation | System and method for high-speed laser detection of ultrasound |
US6393915B1 (en) * | 1999-07-29 | 2002-05-28 | Koninklijke Philips Electronics N.V. | Method and device for simultaneously measuring multiple properties of multilayer films |
US7019845B1 (en) * | 2004-10-06 | 2006-03-28 | Rudolph Technologies, Inc. | Measuring elastic moduli of dielectric thin films using an optical metrology system |
EP1916512A1 (en) * | 2005-07-20 | 2008-04-30 | Shimadzu Corporation | Optical measuring instrument |
US9147102B2 (en) * | 2012-01-02 | 2015-09-29 | Camtek Ltd. | Method and system for measuring bumps based on phase and amplitude information |
CN103018170A (en) * | 2012-11-28 | 2013-04-03 | 南京百丝胜新材料科技有限公司 | Non-contact detection method for detecting elastic parameter uniformity of material on line |
NL2012689B1 (en) * | 2014-04-24 | 2016-07-08 | Eggciting Products B V | An apparatus for cooking at least one egg with an eggshell as well as such a method. |
WO2016061679A1 (en) | 2014-10-22 | 2016-04-28 | Parsin Haji Reza | Photoacoustic remote sensing (pars) |
WO2016132349A1 (en) * | 2015-02-19 | 2016-08-25 | B. G. Negev Technologies And Applications Ltd., At Ben-Gurion University | Transient bragg gratings in optical waveguides and their applications |
US10327646B2 (en) * | 2016-02-02 | 2019-06-25 | Illumisonics Inc. | Non-interferometric photoacoustic remote sensing (NI-PARS) |
US10627338B2 (en) | 2017-03-23 | 2020-04-21 | Illumisonics Inc. | Camera-based photoacoustic remote sensing (C-PARS) |
EP3567426B1 (en) * | 2018-03-12 | 2021-07-07 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Laser projection module, depth camera, and electronic device |
CN108871640B (en) * | 2018-06-13 | 2020-03-31 | 西安交通大学 | Transient grating laser ultrasonic surface wave-based residual stress nondestructive testing system and method |
EP3648138A1 (en) * | 2018-10-31 | 2020-05-06 | FEI Company | Measurement and endpointing of sample thickness |
EP3938772A4 (en) | 2019-03-15 | 2022-11-30 | Illumisonics Inc. | Single source photoacoustic remote sensing (ss-pars) |
JP2023509586A (en) | 2019-12-19 | 2023-03-09 | イルミソニックス インコーポレイテッド | Photoacoustic remote sensing (PARS) and related uses |
US11464451B1 (en) | 2020-03-11 | 2022-10-11 | Huxley Medical, Inc. | Patch for improved biometric data capture and related processes |
US11786128B2 (en) | 2020-06-18 | 2023-10-17 | Illumisonics Inc. | PARS imaging methods |
US11122978B1 (en) | 2020-06-18 | 2021-09-21 | Illumisonics Inc. | PARS imaging methods |
US11660005B1 (en) | 2021-06-04 | 2023-05-30 | Huxley Medical, Inc. | Processing and analyzing biometric data |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3462223A (en) | 1965-10-21 | 1969-08-19 | Gen Electric | Optical strain gauge |
US4522510A (en) | 1982-07-26 | 1985-06-11 | Therma-Wave, Inc. | Thin film thickness measurement with thermal waves |
US4655547A (en) | 1985-04-09 | 1987-04-07 | Bell Communications Research, Inc. | Shaping optical pulses by amplitude and phase masking |
US4710030A (en) | 1985-05-17 | 1987-12-01 | Bw Brown University Research Foundation | Optical generator and detector of stress pulses |
US4728165A (en) | 1986-11-05 | 1988-03-01 | Research Corporation | Superimposed fast transient and permanent holographic gratings |
US4812036A (en) | 1987-07-08 | 1989-03-14 | Mitsubishi Denki Kabushiki Kaisha | Stress evaluation apparatus |
US4939368A (en) | 1989-04-13 | 1990-07-03 | Massachusetts Institute Of Technology | Polychromatic optical strain gauge |
US5062693A (en) | 1990-02-15 | 1991-11-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Administration | All-optical photochromic spatial light modulators based on photoinduced electron transfer in rigid matrices |
US5132824A (en) | 1990-08-31 | 1992-07-21 | Bell Communications Research, Inc. | Liquid-crystal modulator array |
US5220403A (en) | 1991-03-11 | 1993-06-15 | International Business Machines Corporation | Apparatus and a method for high numerical aperture microscopic examination of materials |
US5263039A (en) | 1992-05-18 | 1993-11-16 | The University Of Rochester | System for generating shaped optical pulses and measuring optical pulses using spectral beam deflection (SBD) |
US5285438A (en) | 1991-10-31 | 1994-02-08 | Regents Of The University Of California | Motionless parallel readout head for an optical disk recorded with arrayed one-dimensional holograms |
US5344236A (en) | 1992-01-23 | 1994-09-06 | Fishman Iiya M | Method for evaluation of quality of the interface between layer and substrate |
US5361638A (en) | 1990-03-30 | 1994-11-08 | Stfi | Arrangement for measuring mechanical properties of a foil material through use of an excitation unit that includes a laser |
US5479256A (en) | 1992-12-04 | 1995-12-26 | Research Development Corp. Of Japan | Transient grating spectroscopy |
US5633711A (en) | 1991-07-08 | 1997-05-27 | Massachusettes Institute Of Technology | Measurement of material properties with optically induced phonons |
US5734470A (en) | 1995-01-24 | 1998-03-31 | Massachusetts Institute Of Technology | Device and method for time-resolved optical measurements |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5544144A (en) * | 1990-11-14 | 1996-08-06 | Asahi Kogaku Kogyo Kabushiki Kaisha | Optical head structure having compactly arranged parts |
US5438879A (en) * | 1993-03-16 | 1995-08-08 | The United States Of America Represented By The Administrator Of The National Aeronautics And Space Administration | Method for measuring surface shear stress magnitude and direction using liquid crystal coatings |
US5672830A (en) * | 1994-10-04 | 1997-09-30 | Massachusetts Institute Of Technology | Measuring anisotropic mechanical properties of thin films |
US5546811A (en) * | 1995-01-24 | 1996-08-20 | Massachusetts Instittue Of Technology | Optical measurements of stress in thin film materials |
-
1997
- 1997-06-30 US US08/885,555 patent/US6016202A/en not_active Expired - Fee Related
-
1998
- 1998-06-19 WO PCT/US1998/012630 patent/WO1999000639A1/en not_active Application Discontinuation
- 1998-06-19 EP EP98930334A patent/EP0922197A4/en not_active Withdrawn
- 1998-06-19 JP JP11505596A patent/JP2001500975A/en not_active Withdrawn
-
1999
- 1999-05-25 US US09/318,322 patent/US6075602A/en not_active Expired - Fee Related
- 1999-05-25 US US09/318,323 patent/US6175421B1/en not_active Expired - Fee Related
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3462223A (en) | 1965-10-21 | 1969-08-19 | Gen Electric | Optical strain gauge |
US4522510A (en) | 1982-07-26 | 1985-06-11 | Therma-Wave, Inc. | Thin film thickness measurement with thermal waves |
US4655547A (en) | 1985-04-09 | 1987-04-07 | Bell Communications Research, Inc. | Shaping optical pulses by amplitude and phase masking |
US4710030A (en) | 1985-05-17 | 1987-12-01 | Bw Brown University Research Foundation | Optical generator and detector of stress pulses |
US4728165A (en) | 1986-11-05 | 1988-03-01 | Research Corporation | Superimposed fast transient and permanent holographic gratings |
US4812036A (en) | 1987-07-08 | 1989-03-14 | Mitsubishi Denki Kabushiki Kaisha | Stress evaluation apparatus |
US4939368A (en) | 1989-04-13 | 1990-07-03 | Massachusetts Institute Of Technology | Polychromatic optical strain gauge |
US5062693A (en) | 1990-02-15 | 1991-11-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Administration | All-optical photochromic spatial light modulators based on photoinduced electron transfer in rigid matrices |
US5361638A (en) | 1990-03-30 | 1994-11-08 | Stfi | Arrangement for measuring mechanical properties of a foil material through use of an excitation unit that includes a laser |
US5132824A (en) | 1990-08-31 | 1992-07-21 | Bell Communications Research, Inc. | Liquid-crystal modulator array |
US5220403A (en) | 1991-03-11 | 1993-06-15 | International Business Machines Corporation | Apparatus and a method for high numerical aperture microscopic examination of materials |
US5633711A (en) | 1991-07-08 | 1997-05-27 | Massachusettes Institute Of Technology | Measurement of material properties with optically induced phonons |
US5285438A (en) | 1991-10-31 | 1994-02-08 | Regents Of The University Of California | Motionless parallel readout head for an optical disk recorded with arrayed one-dimensional holograms |
US5344236A (en) | 1992-01-23 | 1994-09-06 | Fishman Iiya M | Method for evaluation of quality of the interface between layer and substrate |
US5263039A (en) | 1992-05-18 | 1993-11-16 | The University Of Rochester | System for generating shaped optical pulses and measuring optical pulses using spectral beam deflection (SBD) |
US5479256A (en) | 1992-12-04 | 1995-12-26 | Research Development Corp. Of Japan | Transient grating spectroscopy |
US5734470A (en) | 1995-01-24 | 1998-03-31 | Massachusetts Institute Of Technology | Device and method for time-resolved optical measurements |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6587794B1 (en) * | 1999-07-30 | 2003-07-01 | Koninklijke Philips Electronics N.V. | Method for measuring thin metal films |
US6782337B2 (en) | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
US20020106848A1 (en) * | 2000-09-20 | 2002-08-08 | Dan Wack | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
US20040115843A1 (en) * | 2000-09-20 | 2004-06-17 | Kla-Tencor, Inc. | Methods and systems for determining a presence of macro defects and overlay of a specimen |
US20020093648A1 (en) * | 2000-09-20 | 2002-07-18 | Mehrdad Nikoonahad | Methods and systems for determining an implant characterstic and a presence of defects on a specimen |
US20020107660A1 (en) * | 2000-09-20 | 2002-08-08 | Mehrdad Nikoonahad | Methods and systems for determining a critical dimension and a thin film characteristic of a specimen |
US20020180961A1 (en) * | 2000-09-20 | 2002-12-05 | Dan Wack | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
US20020179864A1 (en) * | 2000-09-20 | 2002-12-05 | John Fielden | Methods and systems for determining a thin film characteristic and an electrical property of a specimen |
US20020179867A1 (en) * | 2000-09-20 | 2002-12-05 | John Fielden | Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen |
US20020180986A1 (en) * | 2000-09-20 | 2002-12-05 | Mehrdad Nikoonahad | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
US20020190207A1 (en) * | 2000-09-20 | 2002-12-19 | Ady Levy | Methods and systems for determining a characteristic of micro defects on a specimen |
US20030011786A1 (en) * | 2000-09-20 | 2003-01-16 | Ady Levy | Methods and systems for determining overlay and flatness of a specimen |
US20020103564A1 (en) * | 2000-09-20 | 2002-08-01 | John Fielden | Methods and systems for determining a composition and a thickness of a specimen |
US6633831B2 (en) * | 2000-09-20 | 2003-10-14 | Kla Tencor Technologies | Methods and systems for determining a critical dimension and a thin film characteristic of a specimen |
US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
US20040073398A1 (en) * | 2000-09-20 | 2004-04-15 | Kla-Tencor, Inc. | Methods and systems for determining a critical dimension and a thin film characteristic of a specimen |
US20040092045A1 (en) * | 2000-09-20 | 2004-05-13 | Gary Bultman | Methods and systems for determining a presence of macro and micro defects on a specimen |
US20020107650A1 (en) * | 2000-09-20 | 2002-08-08 | Dan Wack | Methods and systems for determining a critical dimension and a presence of defects on a specimen |
US6806951B2 (en) | 2000-09-20 | 2004-10-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen |
US20020102749A1 (en) * | 2000-09-20 | 2002-08-01 | John Fielden | Methods and systems for determining a characteristic of a layer formed on a specimen by a deposition process |
US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
US8502979B2 (en) | 2000-09-20 | 2013-08-06 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US6818459B2 (en) | 2000-09-20 | 2004-11-16 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of macro defects and overlay of a specimen |
US6829559B2 (en) | 2000-09-20 | 2004-12-07 | K.L.A.-Tencor Technologies | Methods and systems for determining a presence of macro and micro defects on a specimen |
US8179530B2 (en) | 2000-09-20 | 2012-05-15 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7751046B2 (en) | 2000-09-20 | 2010-07-06 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US20060072807A1 (en) * | 2000-09-20 | 2006-04-06 | Kla-Tencor Technologies. | Methods and systems for determining a presence of macro and micro defects on a specimen |
US20050034831A1 (en) * | 2001-12-20 | 2005-02-17 | Beuther Paul D. | Method to measure tension in a moving web and to control properties of the web |
US6813941B2 (en) | 2001-12-20 | 2004-11-09 | Kimberly-Clark Worldwide, Inc. | Method to measure tension in a moving web and to control properties of the web |
US20070024871A1 (en) * | 2002-12-13 | 2007-02-01 | Alexei Maznev | Method and apparatus for measuring thickness of thin films via transient thermoreflectance |
US20040246485A1 (en) * | 2003-06-09 | 2004-12-09 | Behzad Imani | Far-field measurement of properties of metallic thin films |
US20080123080A1 (en) * | 2003-06-24 | 2008-05-29 | Advanced Metrology Systems Llc | Method of Measuring Sub-Micron Trench Structures |
US7499183B2 (en) | 2003-06-24 | 2009-03-03 | Advanced Metrology Systems, Llc | Method of measuring sub-micron trench structures |
US10228284B2 (en) | 2015-08-20 | 2019-03-12 | Massachusetts Institute Of Technology | Devices and methods for sensing targets using photothermal speckle detection |
US10605662B2 (en) | 2015-08-20 | 2020-03-31 | Massachusetts Institute Of Technology | Material property determination using photothermal speckle detection |
WO2017222670A1 (en) * | 2016-06-22 | 2017-12-28 | University Of Virginia Patent Foundation | Fiber-optic based material property measurement system and related methods |
US11635376B2 (en) | 2016-06-22 | 2023-04-25 | University Of Virginia Patent Foundation | Fiber-optic based material property measurement system and related methods |
Also Published As
Publication number | Publication date |
---|---|
US6075602A (en) | 2000-06-13 |
US6016202A (en) | 2000-01-18 |
EP0922197A4 (en) | 2002-07-17 |
EP0922197A1 (en) | 1999-06-16 |
WO1999000639A1 (en) | 1999-01-07 |
JP2001500975A (en) | 2001-01-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6175421B1 (en) | Method and apparatus for measuring material properties using transient-grating spectroscopy | |
JP3581369B2 (en) | Apparatus and method for time-resolved optical measurement | |
EP1044362B1 (en) | Improved method and apparatus for film-thickness measurements | |
KR100525580B1 (en) | Method and device for measuring the concentration of ions implanted in semiconductor materials | |
US6795198B1 (en) | Method and device for measuring thin films and semiconductor substrates using reflection mode geometry | |
US6069703A (en) | Method and device for simultaneously measuring the thickness of multiple thin metal films in a multilayer structure | |
US6348967B1 (en) | Method and device for measuring the thickness of opaque and transparent films | |
US5982482A (en) | Determining the presence of defects in thin film structures | |
US6256100B1 (en) | Method and device for measuring the thickness of thin films near a sample's edge and in a damascene-type structure | |
US8817260B2 (en) | Modulated reflectance measurement system using UV probe | |
US6204926B1 (en) | Methods and system for optically correlating ultrashort optical waveforms | |
EP0944810A1 (en) | Improved method and apparatus for measuring the concentration of ions implanted in semiconductor materials | |
KR20060070757A (en) | Apparatus and method of laser-ultrasonic measurement for hot object | |
JPWO2004053466A1 (en) | Spectroscopic analysis method and spectroscopic analysis apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: PHILIPS ADVANCED METROLOGY SYSTEMS, INC., MASSACHU Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ACTIVE IMPULSE SYSTEMS, INC.;REEL/FRAME:020325/0538 Effective date: 20080108 |
|
AS | Assignment |
Owner name: ADVANCED METROLOGY SYSTEMS LLC, MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PHILIPS ADVANCED METROLOGY SYSTEMS, INC.;REEL/FRAME:020679/0376 Effective date: 20061005 Owner name: PHILIPS ADVANCED METROLOGY SYSTEMS, INC., MASSACHU Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ACTIVE IMPULSE SYSTEMS, INC.;REEL/FRAME:020679/0369 Effective date: 20080108 |
|
AS | Assignment |
Owner name: ACTIVE IMPULSE SYSTEMS, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FUCHS, MARTIN;ROGERS, JOHN A.;BANET, MATTHEW J.;REEL/FRAME:020679/0975 Effective date: 19971021 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20130116 |