|Numéro de publication||US6661061 B1|
|Type de publication||Octroi|
|Numéro de demande||US 09/207,437|
|Date de publication||9 déc. 2003|
|Date de dépôt||8 déc. 1998|
|Date de priorité||19 août 1996|
|État de paiement des frais||Payé|
|Autre référence de publication||DE69710609D1, DE69710609T2, EP0944921A1, EP0944921B1, US5882993, WO1998008254A1|
|Numéro de publication||09207437, 207437, US 6661061 B1, US 6661061B1, US-B1-6661061, US6661061 B1, US6661061B1|
|Inventeurs||Mark I. Gardner, Fred N. Hause|
|Cessionnaire d'origine||Advanced Micro Devices, Inc.|
|Exporter la citation||BiBTeX, EndNote, RefMan|
|Citations de brevets (72), Citations hors brevets (17), Référencé par (25), Classifications (20), Événements juridiques (4)|
|Liens externes: USPTO, Cession USPTO, Espacenet|
This application is a Divisional of U.S. Ser. No. 08/699,249, filed Aug. 19, 1996, now U.S. Pat. No. 5,882,993.
1. Field of the Invention
The invention relates to the field of semiconductor processing and more particularly to an MOS integrated circuit in which select transistors are fabricated with a thinner gate oxide than the remaining transistors.
2. Description of the Relevant Art
Very large scale integrated (VLSI) metal-oxide-semiconductor (“MOS”) circuits include a large number of interconnected transistors formed in a silicon substrate. Typically, the gate electrode of the MOS transistor functions as the transistor's input. The transistor is typically activated or turned on by driving the gate voltage (VG) to a threshold value, the threshold voltage (VT). The drain current (ID) of an MOS transistor typically serves as the transistor's output. Because the gate electrode of each transistor has a small but finite capacitance associated with it, the gate electrode cannot instantaneously achieve a desired change in voltage. Instead, a finite amount of time is required to charge the small gate capacitor to the appropriate voltage level. The amount of time required for a gate electrode to achieve a threshold level can be reduced by decreasing the capacitance of the gate electrode or increasing the drain current of transistors from preceding stages. Generally, for small values of drain voltage, VD, (i.e., VD<VG−VT) the drain current ID of an MOS transistor increases linearly with the drain voltage (assuming VG≧VT). As VD is increased beyond this linear region, however, ID levels off and becomes independent, to a first order approximation, of VD. This value of ID is commonly referred to as the saturated drain current, IDsat. In other words, IDsat is the maximum drain current produced by an MOS transistor operating under normal biasing (i.e., VD≡VCC, |VG|≧|VT|, and VSS =0 V) for a given gate voltage. IDsat is, therefore, a direct measure of the potential speed of an MOS circuit. Increasing IDsat increases the integrated circuit's performance by enabling each transistor to drive subsequent stages of transistors to their threshold voltage in less time.
In the linear region, ID=k (VG−VDS/2) VDS, where k=μCOXW/L. Inspection of this equation reveals that ID can be increased by increasing the oxide capacitance COX. In addition to increasing k, a larger oxide capacitance reduces the threshold voltages VT for the general case in which the total charge QTOT trapped within the oxide and trapped at the oxide-silicon interface is relatively small. The capacitance, COX, of an MOS transistor is closely approximated by a parallel plate capacitor such that Cox≡A∈/tOX where A is the area of the gate structure, ∈ is the permitivity of the dielectric, and tOX is the oxide thickness. Because it is undesirable to increase the area of the gate and difficult to alter the dielectric, increasing the capacitance COX must be accomplished by decreasing the oxide thickness tOX.
In many complementary metal oxides semiconductor (CMOS) processes, the gate structures for the transistors are formed from heavily doped polysilicon. To achieve a degree of symmetry between the p-channel and n-channel transistors, it is not uncommon to dope the gate structures of the n-channel devices with an n-type impurity such as arsenic or phosphorous while doping the gate structures of the p-channel devices with a p-type impurity such as boron. The doping of the p-channel polysilicon gate with boron can become problematic for thin gate oxide structures due to the relatively rapid rate at which boron diffuses through silicon dioxide.
In very thin oxide structures, (i.e., tOX≦3 nm), boron ions from the heavily doped p+ polysilicon can diffuse through the oxide into the silicon bulk, thereby shifting the threshold voltage VT of the p-channel devices. This limitation on the thickness of the p-channel oxide has typically limited the oxide thickness of the n-channel devices as well because it is highly desirable from a manufacturing perspective to grow the capacitor or gate oxide nonselectively, (i.e., grow the gate across the entire wafer rather than in selected or masked regions of the wafer). The nonselective oxide growth tends to result in oxide thicknesses that are uniform across the entire wafer. Furthermore, conventional processing considerations teach away from multiple gate oxide thicknesses within a technology because of the nonsymetry that would result from the use of such multiple thickness oxide technologies.
The desire to maintain symmetry has undesirably limited the potential performance of the n-channel devices in certain CMOS processes by restricting the minimum thickness of the gate oxide. More generally, symmetry considerations have prohibited designs in which selected critical transistors could be designated as high performance, thin oxide transistors. It would, therefore, be desirable to achieve a semiconductor manufacturing process in which selected transistors incorporate a gate oxide having a first thickness while the remaining transistors have a second gate oxide thickness without unduly complicating the process flow.
The problems identified above are in large part addressed by a manufacturing process capable of producing at least two different oxide thicknesses. Nitrogen is incorporated into selected areas of the silicon prior to the formation of the gate oxide. A subsequent gate oxide cycle results in a first oxide thickness over the nitrogen regions of the silicon and a second gate oxide thickness over the remaining regions of the silicon. The first oxide thickness will tend to be less than the second oxide thickness due to the tendency of the nitrogen to retard the silicon oxidation rate. In this manner, multiple gate oxide thicknesses can be achieved without unduly complicating the manufacturing process.
Broadly speaking, the present invention contemplates a semiconductor process. A semiconductive substrate having a first region and a second region is provided. The first region and the second region are laterally displaced with respect to one another. A nitrogen species impurity distribution is then introduced into the first region of the semiconductor substrate. Thereafter, a gate dielectric layer is grown on an upper surface of the semiconductor substrate. The gate dielectric has a first thickness over the first region of the semiconductor substrate and a second thickness over the second region of the semiconductor substrate. The first thickness is less than the second thickness. In a CMOS embodiment of the present invention, the first region of the semiconductor substrate comprises p-type silicon while the second substrate region comprises n-type silicon. Preferably, the step of introducing the nitrogen species impurity distribution into the semiconductor substrate is accomplished by thermally oxidizing the first substrate region in a nitrogen bearing ambient. In a presently preferred embodiment, the nitrogen bearing ambient includes N2O, NH3, O2 and HCl in an approximate ratio of 60:30:7:3. In alternative embodiments the nitrogen bearing ambient includes NO, O2 and HCl in an approximate ratio of 90:7:3 or N2O, O2 and HCl in an approximate ratio of 90:7:3. The introduction of the nitrogen species impurity into first substrate region 102 may alternatively be accomplished with rapid thermal anneal processing.
In one embodiment, an initial oxide layer is formed on an upper surface of the semiconductor substrate prior to thermally oxidizing the first substrate region. The formation of the initial oxide layer, in one embodiment, is followed by forming a silicon nitride layer on the initial oxide layer and removing portions of the silicon nitride layer over the first region of the semiconductor substrate. In alternative embodiments, the initial oxide layer can comprise a thermal oxide or an oxide deposited in a CVD reactor.
The present invention further contemplates an integrated circuit. The integrated circuit includes a semiconductor substrate having a first substrate region and a second substrate region. The first substrate region is laterally displaced with respect to the second substrate region. The first substrate region includes a nitrogen species impurity distribution. The integrated circuit further includes a first gate dielectric formed on an upper surface of the first region of the semiconductor substrate. The first gate dielectric has a first thickness. A second gate dielectric is formed on an upper surface of the second region of the semiconductor substrate. The second gate dielectric has a second thickness which is greater than the first thickness. In a CMOS embodiment, the first region of the semiconductor substrate comprises p-type silicon and the second region of the semiconductor substrate comprises n=type silicon.
In a preferred embodiment, the integrated circuit further includes a dielectric isolation structure formed within an upper region of the semiconductor substrate. The dielectric isolation structure is laterally disposed between the first region and the second region. Preferably, the integrated circuit further comprises a first conductive gate formed on the gate dielectric over the first region of the semiconductor substrate, a second conductive gate formed on the gate dielectric over the second region of a semiconductor substrate, a first pair of source/drain regions laterally disposed on either side of the first conductive gate within the first region of the semiconductor substrate, and a second pair of source/drain regions laterally disposed on either side of the second conductive gate within the second region of the semiconductor substrate.
In a presently preferred CMOS embodiment, the first conductive gate comprises n+ polysilicon and the second conductive gate comprises p+ polysilicon. In a presently preferred CMOS embodiment, the first region of the semiconductor substrate comprises p-type silicon, the second region of the semiconductor substrate comprises n-type silicon, the first pair of source/drain regions comprises n-type silicon, and the second pair of source/drain regions comprises p-type silicon. The first gate dielectric and the second gate dielectric preferably comprise a thermal oxide and, in a presently preferred embodiment, the first thickness is less than the second thickness. In one embodiment, the first thickness is approximately 15 angstroms, and the second thickness is approximately 30 angstroms.
Other objects and advantages of the invention will become apparent upon reading the following detailed description and upon reference to the accompanying drawings in which:
FIG. 1 is a partial cross-sectional view of a semiconductor substrate;
FIG. 2 is a processing step subsequent to FIG. 1 in which an isolation dielectric structure has been formed between a first semiconductor substrate region and a second semiconductor substrate region and an initial oxide layer and a silicon nitride layer have been patterned on the semiconductor substrate;
FIG. 3 is a processing step subsequent to FIG. 2 in which a thermal oxide is grown in the presence of a nitrogen bearing ambient;
FIG. 4 is a processing step subsequent to FIG. 3 in which the thermal oxide, the initial oxide, and the silicon nitride layer have been removed;
FIG. 5 is a processing step subsequent to FIG. 4 in which a gate dielectric layer has been grown on an upper surface of the semiconductor substrate;
FIG. 6 is a processing step subsequent to FIG. 5 in which a polysilicon layer has been deposited on the gate dielectric layer;
FIG. 7 is a processing step subsequent to FIG. 6 in which a pair of polysilicon gate structures has been patterned from the polysilicon layer; and
FIG. 8 is a processing step subsequent to FIG. 7 in which source/drain regions have been formed laterally disposed on either side of the polysilicon gates.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the drawings and detailed description thereto are not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the present invention as defined by the appended claims.
Turning now to the drawings, FIGS. 1-8 disclose a presently preferred processing sequence for forming the dual oxide integrated circuit of the present invention. Turning to FIG. 1, a semiconductor substrate l00 is provided. A semiconductor substrate 100 includes a first substrate region 102 and a second substrate region 104. First substrate region 102 is laterally displaced with respect to second substrate region 104. Semiconductor substrate 100 preferably comprises single crystal silicon. In a CMOS embodiment, first substrate region 102 comprises p-type silicon and second substrate region 104 comprises n-type silicon. Turning now to FIG. 2, isolation dielectric structure 106 is formed between first substrate region 102 and second substrate region 104 to electrically isolate the two regions from one another thereby preventing the inadvertent coupling of first substrate region 102 to second substrate region 104. In the presently preferred embodiment depicted in FIG. 2, isolation dielectric structure 106 comprises a shallow trench isolation dielectric. Shallow trench isolation provides adequate electrical isolation between adjoining substrate regions while maintaining the planarity of upper surface 101 of silicon substrate 100. The shallow trench dielectric structure 106 shown in the Fig. is typically fabricated by etching a trench into silicon substrate 100 through the use of a dry anisotropic silicon etch process. Thereafter, a dielectric material such as CVD oxide is deposited across silicon substrate 100 to fill the trench with dielectric material. The oxide deposition step may be preceded by a thermal oxidation step in which a thin thermal oxide is grown at the side walls and floor of the trench. After the oxide deposition step, a planarization step is performed to remove oxide material from regions exterior to the trench. Although the presently preferred embodiment is implemented with a shallow trench isolation dielectric structure, it will be appreciated by those skilled in the art that alternative isolation methods may be substituted. As an example, a LOCOS isolation structure can be substituted for shallow trench dielectric structure 106. The LOCOS structure is formed according to a well-known process sequence in which active regions of the silicon substrate are masked by a silicon nitride layer typically desposed on top of a sacrificial oxide layer. The silicon nitride layer is patterned to expose regions of the semiconductor substrate into which it is desired to place an isolation structure. A subsequent thermal oxidation step will result in the formation of a thermal oxide partially grown within silicon substrate 100 and partially extending above upper surface 101 of silicon substrate 100 in regions where the silicon nitride layer has been patterned away. After the thermal oxidation step, the silicon nitride layer is removed leaving behind the LOCOS isolation structure. The LOCOS isolation structure has the dual disadvantages of resulting in a nonplanar surface and having a bird's peak structure that encroaches on the active region of the neighboring transistors.
After the formation of isolation dielectric structure 106, an initial oxide layer 108 is formed on upper surface 101 of silicon substrate 100. In the presently preferred embodiment, initial oxide 108 may be formed with a thermal oxidation process or with a CVD deposition step. Thereafter, silicon nitride layer 110 is deposited upon initial oxide 108 and patterned with a masking step to remove portions of silicon nitride layer 110 above first region 102 of semiconductor substrate 100. Initial oxide 108 serves to reduce the amount of stress upon silicon substrate 100 caused by silicon nitride layer 110. The portion of initial oxide 108 over first substrate region 102 may, in alternative embodiments, be removed prior to the thermal oxidation step described below with respect to FIG. 3 or may be left in place such that the thermal oxidation step of FIG. 3 comprises a reoxidation of initial oxide 108 over first substrate region 102. In the former embodiment, initial oxide 108 over first substrate region 102 is removed, preferably in conjunction with the etch of the silicon nitride layer such that an upper surface 101 of silicon substrate 102 is exposed. In an embodiment in which initial oxide 108 is left in place over first substrate region 102, initial oxide 108 comprises a nitrogen-free or “pure” oxide. This pure oxide layer can be used to adjust the final thicknesses of the dielectric over first substrate region 102 and, accordingly, the concentration of nitrogen within substrate 100 as described below.
Turning to FIG. 3, a thermal oxidation process is performed in nitrogen bearing ambient 114 such that nitrogen bearing oxide 112 is formed over first substrate region 102 and nitrogen species distribution 116 is formed within first substrate region 102 of semiconductor substrate 100. Nitrogen bearing ambient 114 preferably includes O2, HCl, and a source of nitrogen, such as NO, N2O, or NH3. In a presently preferred embodiment, nitrogen bearing ambient 114 comprises N2O, NH3, O2and HCl in an approximate ratio of 60:30:7:3. In alternative embodiments, nitrogen bearing ambient 114 may comprise N2O, O2, and HCl or NO, O2, and HCl in approximate ratios of 90:7:3. In one embodiment, ambient 114 may comprise a nitrogen-free ambient for an initial period of the oxidation process. After the initial period, nitrogen may be introduced into ambient 114 to produce the nitrogen bearing ambient previously described. In such an embodiment, the oxidation that occurs during the time period when ambient 114 is free of a nitrogen species produces a nitrogen-free initial oxide. The subsequent oxidation that occurs when nitrogen is introduced into ambient 114 produces a nitrogen bearing oxide 112 and the nitrogen bearing impurity distribution 116 within first substrate region 102. Alternatively, after the formation of a nitrogen-free initial oxide, nitrogen may be introduced into first substrate region 102 in a 100% NO or N2O ambient.
Rapid thermal annealing may be substituted in part or in whole for the processing described above with respect to initial oxide 108, nitrogen bearing oxide 112, and nitrogen impurity distribution 116. More specifically, one embodiment of the present invention contemplates forming initial oxide 108 with a rapid thermal anneal step and thereafter introducing nitrogen into semiconductor substrate 101 with in a diffusion tube as described above. Alternatively, the entire sequence may be performed in a rapid thermal anneal process. As an example, such a process would form initial oxide 108 with an RTA process in a nitrogen free ambient and thereafter form nitrogen bearing oxide 112 with an RTA process in a nitrogen bearing ambient such as any of the nitrogen bearing ambients described above. The rapid thermal annealing contemplated herein would preferably include subjecting the semiconductor wafer to a temperature of 900-1100° C. for a period of 10 to 30 seconds.
As previously mentioned, nitrogen bearing oxide 112 may be grown from no initial oxide, in which case initial oxide 108 is removed over first substrate region 102 prior to the thermal oxidation of FIG. 3. Alternatively, initial oxide 108 over first substrate region 102 may be left in place, such that the oxidation step of FIG. 3 comprises a reoxidation. The option to perform the thermal oxidation of FIG. 3 with or without an initial oxide 108 allows for greater control over the final thickness of nitrogen bearing oxide 112. The presence of a nitrogen source within nitrogen bearing ambient 114 results in the formation of a nitrogen bearing impurity distribution 116 within first substrate region 102 of semiconductor substrate 100. Unlike impurity distributions comprising arsenic, phosphorous, or boron, nitrogen distribution 116 does not significantly alter the electrical properties of first substrate region 102. It is theorized, however, that the nitrogen molecules within distribution 116 form strong bonds with silicon atoms in semiconductor substrate 100. The strong bonds between the nitrogen and silicon retard the process whereby silicon bonds with oxygen to form a silicon-oxide film such as silicon dioxide. Thus, the oxidation rate of a nitrogen bearing silicon substrate is less than the oxidation rate of a pure silicon substrate. This oxidation rate differential can be advantageously used to produce an oxide film having a variable thickness.
Turning to FIG. 4, nitrogen bearing oxide 112, initial oxide 108, and silicon nitride layer 110 are removed from upper surface 101 of semiconductor substrate 100. Removal of silicon nitride preferably occurs through the use of an 85% phosphoric solution at 120° C. Removal of oxides 112 and 108 can be accomplished with a wet or dry etch process.
Turning to FIG. 5, gate dielectric 118 is grown upon upper surface 101 of semiconductor substrate 100 using thermal oxidation 117. Thermal oxidation 117 results in a gate dielectric 118 having a first thickness t1 over first substrate region 102 and a second thickness t2 over second substrate region 104. Preferably, nitrogen bearing impurity distribution 116 within first substrate region 102 retards the oxidation of first substrate region 102 relative to the oxidation rate of second substrate region 104 such that second thickness t2 is greater than first thickness t1. In a presently preferred embodiment, t1 is approximately 15 angstroms and t2 is approximately 30 angstroms. Thus, the present invention advantageously enables the growth of an oxide film having dual thicknesses, wherein the regions of the semiconductor substrate over which the thinner oxide is formed is determined by a conventional masking step coupled with an oxidation step in the presence of a nitrogen ambient. Because nitrogen passively interacts with the silicon substrate, the present invention produces dual oxide thicknesses without significantly altering the electrical properties of semiconductor substrate 100 thereby eliminating the need to significantly alter subsequent processing. In one embodiment, first substrate region 102 of semiconductor substrate 100 may comprise the n-channel region of a CMOS process while second substrate region 104 comprises the p-channel region. In another embodiment, first substrate region 102 and second substrate region 104 could both be comprised of p-type silicon such that the process would result in the formation of selected n-channel transistors having thinner gate oxides and, accordingly, higher values of saturated drain current, IDsat.
FIG. 6 depicts the deposition of a conductive gate layer 120 upon gate dielectric layer 118. Preferably, conductive gate layer 120 comprises CVD polysilicon. Typically, the resistivity of as-deposited silicon must be reduced by doping the polysilicon layer with impurities. The doping of polysilicon may be accomplished in situ or through the use of a subsequent diffusion process. More preferably, however, ion implantation is used to dope polysilicon. FIG. 6 depicts ion implementation 121 doping polysilicon layer 120. In a presently preferred CMOS embodiment of the present invention, ion implantation 121 comprises a first implantation 121 a over first substrate region 102 and a second implantation 121 b over second substrate region 104. In this embodiment, first substrate region 102 comprises the n-channel region of the CMOS integrated circuit. The work functions of n+ polysilicon and p+ polysilicon are such that it is often desirable to use n+ polysilicon gates for the n-channel devices and p+ polysilicon gates for the p-channel devices despite the increase in process complexity that results from the result of the requirement of two selective implants. In this embodiment, implant 121 a represents the implantation of n-type impurities such as arsenic or phosphorus into conductive gate layer 120 over first substrate regions 102 of semiconductor substrate 100. Implant 121 b represents the implantation of a p-type impurity such as boron into conductive gate layer 120 over second substrate region 104 of semiconductor substrate 100.
Despite the desirability of implementing p+ polysilicon as the gate for a p-channel device, the incorporation of boron ions into the polysilicon gate of a p-channel device is problematic in that boron is known to diffuse rapidly through silicon dioxide. Processing subsequent to the implantation of boron ions into conductive gate layer 120 can result in the diffusion of boron ions from conductive gate layer 120 through gate dielectric 118 and into an upper region of semiconductor substrate 100. This unintended boron distribution within semiconductor substrate 100 proximal to the silicon dioxide silicon interface may unintentionally and undesirably alter the threshold voltage of the p-channel devices. As gate oxide thicknesses invade the sub five nanometer region, the boron diffusion problem becomes greater. On the other hand, it is highly desirable to achieve thin gate oxides to improve circuit performance. The n-type dopants phosphorous and arsenic do not experience any significant diffusion through silicon dioxide. Therefore, n-channel devices can theoretically be fabricated with extremely thin gate oxides. The present invention accommodates high performance n-channel devices with extremely thin gate oxides as well as p+ polysilicon gate p-channel devices requiring thicker gate oxides to prevent unwanted threshold voltage shifting. By incorporating nitrogen into selected regions of the silicon substrate, the oxidation rate can be selectively controlled over desired regions of the substrate such that thin gate oxides are produced in desired locations. In a presently preferred embodiment, the first thickness t1 of gate dielectric 118 over first substration region 102 is approximately 15 angstroms while the second thickness t2 of gate dielectric 118 over second substrate region 104 of silicon substrate 100 is approximately 30 to 50 angstroms. The ratio of first thickness t1 to second thickness t2 can be controlled by altering the concentration of nitrogen distribution 116 within first substrate region 102. Control of the concentration of nitrogen distribution 116 is accomplished by altering the thickness of initial oxide layer 108 formed prior to the thermal oxidation in nitrogen ambient 114. The highest concentration of nitrogen distribution 116 is achieved by initiating thermal oxidation process shown in FIG. 3 with no initial oxide present on upper surface 101 of silicon substrate 100. Higher nitrogen impurity concentrations result in a greater ratio of thickness t2 to t1.
FIG. 7 shows a processing step subsequent to FIG. 6 in which a pair of polysilicon gates 122 a and 122 b have been patterned from conductive gate layer 120. The patterning of polysilicon gates 122 a and 122 b is accomplished with conventional photolithography and etch steps as are well-known in the field of semiconductor processing. The isotropic etch used to form polysilicon gates 122 a and 122 b results in substantially vertical side walls 124.
FIG. 8 shows subsequent processing steps resulting in the formation of a pair of transistors 125 a and 125 b. Transistor 125 a includes a pair of source/drain regions 126 a and 126 b while transistor 125 b includes a pair of source/drain regions 128 a and 128 b. In a presently preferred CMOS embodiment, source/drain regions 126 a and 126 b comprise n-type silicon whereas source/drain regions 128 a and 128 b comprise p-type silicon. Source/drain regions 126 further comprise LDD region 130 and heavily doped region 134. LDD 130 region is formed by implanting an impurity into semiconductor substrate 100 prior to the formation of spacer structures 131 upon substantially vertical sidewalls 134 of polysilicon gates 122. The formation of spacer structures 131 is well-known in the field of semiconductor processing and generally comprises depositing a conformal oxide layer, typically a CVD TEOS oxide, and thereafter anisotropically etching the conformal oxide layer with minimal overetch such that spacer structures 131 are left behind after all of the oxide has been cleared from the planar regions of the wafer topography. Subsequent to the formation of spacer structures 131, a source/drain implant is performed to form heavily doped regions 134. As will be appreciated to those skilled in the art, LDD regions 132 and heavily doped regions 136 of transistor 125 b are formed with the process steps analogous to those used to form LDD region 130 and heavily doped region 134 of transistor 125 a. Thus, FIG. 8 reveals an integrated circuit 140. Integrated circuit 140 includes semiconductor substrate 100 comprised of first substrate region 102 laterally displaced from second substrate region 104. First substrate region 102 includes a nitrogen species impurity distribution 116. Integrated circuit 140 further includes first gate dielectric 118 a formed on an upper surface 101 of first substrate region 102. First gate dielectric 118 a has a first thickness t1. Integrated circuit 140 further includes a second gate dielectric 118 b formed on upper surface 101 of second substrate region 104. Second dielectric 118 b has a second thickness t2. Second thickness t2 is greater than first thickness t1. In an presently preferred CMOS embodiment of the present invention, first substrate region 102 comprises p-type silicon and second substrate region 104 comprises n-type silicon. Preferably, isolation dielectric 106 is formed within semiconductor substrate 100 laterally disposed between first substrate region 102 and second substrate region 104. Integrated circuit 140, in a preferred embodiment, further includes a first conductive gate 122 a, formed over first substrate region 102 and a second conductive gate 122 b formed over second substrate region 104. In a presently preferred CMOS embodiment, first conductive gate 122 a comprises n+ polysilicon while second conductive gate 122 b comprises p+ polysilicon.
It will, therefore, be appreciated to those skilled in the art having the benefit of this disclosure that this invention is capable of producing an integrated circuit including dual oxide thicknesses for selective formation of high performance transistors within the integrated circuit. Furthermore, it is to be understood that the form of the invention shown and described is to be taken as presently preferred embodiments. Various modifications and changes may be made to each and every processing step as would be obvious to a person skilled in the art having the benefit of this disclosure. It is intended that the following claims be interpreted to embrace all such modifications and changes and, accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.
|Brevet cité||Date de dépôt||Date de publication||Déposant||Titre|
|US4098618||3 juin 1977||4 juil. 1978||International Business Machines Corporation||Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation|
|US4287661||26 mars 1980||8 sept. 1981||International Business Machines Corporation||Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation|
|US4551910||27 nov. 1984||12 nov. 1985||Intel Corporation||MOS Isolation processing|
|US4578128||3 déc. 1984||25 mars 1986||Ncr Corporation||Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants|
|US4682407||21 janv. 1986||28 juil. 1987||Motorola, Inc.||Means and method for stabilizing polycrystalline semiconductor layers|
|US4701423 *||20 déc. 1985||20 oct. 1987||Ncr Corporation||Totally self-aligned CMOS process|
|US4707721||20 févr. 1986||17 nov. 1987||Texas Instruments Incorporated||Passivated dual dielectric gate system and method for fabricating same|
|US4729009||20 févr. 1986||1 mars 1988||Texas Instruments Incorporated||Gate dielectric including undoped amorphous silicon|
|US4743566||2 juin 1986||10 mai 1988||U.S. Philips Corp.||Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper|
|US4774197||17 juin 1986||27 sept. 1988||Advanced Micro Devices, Inc.||Method of improving silicon dioxide|
|US4776925||30 avr. 1987||11 oct. 1988||The Trustees Of Columbia University In The City Of New York||Method of forming dielectric thin films on silicon by low energy ion beam bombardment|
|US4808261||20 avr. 1987||28 févr. 1989||Sgs Microelettronica S.P.A.||Fabrication process for EPROM cells with oxide-nitride-oxide dielectric|
|US4851257 *||13 mars 1987||25 juil. 1989||Harris Corporation||Process for the fabrication of a vertical contact|
|US4866002||21 mars 1988||12 sept. 1989||Fuji Photo Film Co., Ltd.||Complementary insulated-gate field effect transistor integrated circuit and manufacturing method thereof|
|US4897365||23 nov. 1987||30 janv. 1990||Sgs Microelecttronica S.P.A.||Reduced-beak planox process for the formation of integrated electronic components|
|US4922319 *||5 juil. 1989||1 mai 1990||Fujitsu Limited||Semiconductor programmable memory device|
|US5043780||3 janv. 1990||27 août 1991||Micron Technology, Inc.||DRAM cell having a texturized polysilicon lower capacitor plate for increased capacitance|
|US5066995||13 mars 1987||19 nov. 1991||Harris Corporation||Double level conductor structure|
|US5082797||22 janv. 1991||21 janv. 1992||Micron Technology, Inc.||Method of making stacked textured container capacitor|
|US5102832||11 févr. 1991||7 avr. 1992||Micron Technology, Inc.||Methods for texturizing polysilicon|
|US5138411||6 mai 1991||11 août 1992||Micron Technology, Inc.||Anodized polysilicon layer lower capacitor plate of a dram to increase capacitance|
|US5141882||30 déc. 1991||25 août 1992||Mitsubishi Denki Kabushiki Kaisha||Semiconductor field effect device having channel stop and channel region formed in a well and manufacturing method therefor|
|US5158463||23 sept. 1991||27 oct. 1992||Samsung Electronics Co., Ltd.||Method of manufacturing both low and high voltage BiCMOS transistors in the same semiconductor substrate|
|US5172200||4 janv. 1991||15 déc. 1992||Mitsubishi Denki Kabushiki Kaisha||MOS memory device having a LDD structure and a visor-like insulating layer|
|US5191509||11 déc. 1991||2 mars 1993||International Business Machines Corporation||Textured polysilicon stacked trench capacitor|
|US5208176||25 oct. 1990||4 mai 1993||Micron Technology, Inc.||Method of fabricating an enhanced dynamic random access memory (DRAM) cell capacitor using multiple polysilicon texturization|
|US5250456||13 sept. 1991||5 oct. 1993||Sgs-Thomson Microelectronics, Inc.||Method of forming an integrated circuit capacitor dielectric and a capacitor formed thereby|
|US5254489||18 oct. 1991||19 oct. 1993||Nec Corporation||Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation|
|US5268992||21 janv. 1992||7 déc. 1993||Brother Kogyo Kabushiki Kaisha||Printer for printing characters made up of first color outline and second color fill|
|US5308787||22 oct. 1993||3 mai 1994||United Microelectronics Corporation||Uniform field oxidation for locos isolation|
|US5316965||29 juil. 1993||31 mai 1994||Digital Equipment Corporation||Method of decreasing the field oxide etch rate in isolation technology|
|US5330920 *||15 juin 1993||19 juil. 1994||Digital Equipment Corporation||Method of controlling gate oxide thickness in the fabrication of semiconductor devices|
|US5330935||21 juil. 1992||19 juil. 1994||International Business Machines Corporation||Low temperature plasma oxidation process|
|US5340764||19 févr. 1993||23 août 1994||Atmel Corporation||Integration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layer|
|US5358894||30 déc. 1993||25 oct. 1994||Micron Technology, Inc.||Oxidation enhancement in narrow masked field regions of a semiconductor wafer|
|US5391907||3 févr. 1994||21 févr. 1995||Gold Star Electron Co., Ltd.||Semiconductor device with buried inverse T-type field region|
|US5429972||9 mai 1994||4 juil. 1995||Advanced Micro Devices, Inc.||Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric|
|US5432114 *||24 oct. 1994||11 juil. 1995||Analog Devices, Inc.||Process for integration of gate dielectric layers having different parameters in an IGFET integrated circuit|
|US5480828 *||30 sept. 1994||2 janv. 1996||Taiwan Semiconductor Manufacturing Corp. Ltd.||Differential gate oxide process by depressing or enhancing oxidation rate for mixed 3/5 V CMOS process|
|US5502009||16 févr. 1995||26 mars 1996||United Microelectronics Corp.||Method for fabricating gate oxide layers of different thicknesses|
|US5515306||14 févr. 1995||7 mai 1996||Ibm||Processing system and method for minimum/maximum number determination|
|US5560032||1 mars 1995||24 sept. 1996||Seiko Epson Corporation||High-performance, superscalar-based computer system with out-of-order instruction execution and concurrent results distribution|
|US5576226 *||17 mai 1994||19 nov. 1996||Lg Semicon Co., Ltd.||Method of fabricating memory device using a halogen implant|
|US5576570||10 mai 1995||19 nov. 1996||Sony Corporation||Semiconductor device having CMOS circuit|
|US5597754||25 mai 1995||28 janv. 1997||Industrial Technology Research Institute||Increased surface area for DRAM, storage node capacitors, using a novel polysilicon deposition and anneal process|
|US5715186||17 avr. 1995||3 févr. 1998||Sgs-Thomson Microelectronics S.A.||Digital processing device with minimum and maximum search instructions|
|US5786256||19 juil. 1996||28 juil. 1998||Advanced Micro Devices, Inc.||Method of reducing MOS transistor gate beyond photolithographically patterned dimension|
|US5789305||27 janv. 1997||4 août 1998||Chartered Semiconductor Manufacturing Ltd.||Locos with bird's beak suppression by a nitrogen implantation|
|US5834352 *||28 août 1996||10 nov. 1998||Samsung Electronics Co., Ltd.||Methods of forming integrated circuits containing high and low voltage field effect transistors therein|
|US5867683||30 avr. 1997||2 févr. 1999||Advanced Micro Devices, Inc.||Method of operating a high performance superscalar microprocessor including a common reorder buffer and common register file for both integer and floating point operations|
|US5872376||6 mars 1997||16 févr. 1999||Advanced Micro Devices, Inc.||Oxide formation technique using thin film silicon deposition|
|US5882993||19 août 1996||16 mars 1999||Advanced Micro Devices, Inc.||Integrated circuit with differing gate oxide thickness and process for making same|
|US5918116 *||9 mai 1997||29 juin 1999||Lucent Technologies Inc.||Process for forming gate oxides possessing different thicknesses on a semiconductor substrate|
|US5937310 *||29 avr. 1996||10 août 1999||Advanced Micro Devices, Inc.||Reduced bird's beak field oxidation process using nitrogen implanted into active region|
|US5962914||8 oct. 1998||5 oct. 1999||Advanced Micro Devices, Inc.||Reduced bird's beak field oxidation process using nitrogen implanted into active region|
|US5963803 *||2 févr. 1998||5 oct. 1999||Advanced Micro Devices, Inc.||Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths|
|US6033943 *||23 août 1996||7 mars 2000||Advanced Micro Devices, Inc.||Dual gate oxide thickness integrated circuit and process for making same|
|US6040207||10 nov. 1998||21 mars 2000||Advanced Micro Devices, Inc.||Oxide formation technique using thin film silicon deposition|
|US6091109 *||11 mai 1999||18 juil. 2000||Nec Corporation||Semiconductor device having different gate oxide thicknesses by implanting halogens in one region and nitrogen in the second region|
|US6093659 *||25 mars 1998||25 juil. 2000||Texas Instruments Incorporated||Selective area halogen doping to achieve dual gate oxide thickness on a wafer|
|US6117736 *||30 janv. 1997||12 sept. 2000||Lsi Logic Corporation||Method of fabricating insulated-gate field-effect transistors having different gate capacitances|
|US6147008 *||19 nov. 1999||14 nov. 2000||Chartered Semiconductor Manufacturing Ltd.||Creation of multiple gate oxide with high thickness ratio in flash memory process|
|US6165849 *||4 déc. 1998||26 déc. 2000||Advanced Micro Devices, Inc.||Method of manufacturing mosfet with differential gate oxide thickness on the same IC chip|
|US6306709 *||16 mars 1999||23 oct. 2001||Seiko Instruments Inc.||Semiconductor device and manufacturing method thereof|
|DE3032608A1||29 août 1980||12 mars 1981||Mitsubishi Electric Corp||Semiconductor device prodn. by ion implantation and oxidn. - to give thick and thin oxide films simultaneously on defect and untreated zones|
|EP0216246A1||9 sept. 1986||1 avr. 1987||Fujitsu Limited||Semiconductor programmable memory device|
|EP0463975A2||28 juin 1991||2 janv. 1992||Digital Equipment Corporation||Byte-compare operation for high-performance processor|
|EP0532260A1||8 sept. 1992||17 mars 1993||Sgs-Thomson Microelectronics, Inc.||A method of forming an integrated circuit capacitor dielectric and a capacitor formed thereby|
|EP0678808A1||18 avr. 1995||25 oct. 1995||Sgs-Thomson Microelectronics S.A.||Digital processing device with instructions for searching the minimum and maximum|
|JPH05283678A||Titre non disponible|
|JPH07297298A||Titre non disponible|
|WO1996017292A1||1 déc. 1995||6 juin 1996||Intel Corporation||Microprocessor with compare operation of composite operands|
|1||A. Philipossian, et al., "Kinetics of Oxide Growth During Reoxidation of Lightly Nitrided Oxides," J. Electrochem. Soc. V. 139, No. 9, L82-3 Sep. 1992.|
|2||B. Doyle, et al., "Simultaneous Growth of Different Thickness Gate Oxides in Silicon CMOS Processing," IEEE Electron Device Letters, vol. 16, No. 7, Jul. 1995.|
|3||Ibm Technical Disclosure Bulletin, vol. 14, No. 11, "Improvement of the Gate-Region Integrity In Fet Devices," S.A. Abbas and P.G. Stern, Apr. 1972, pp. 3348-3350.|
|4||International Search Report for PCT/US97/09638, dated Sep. 16, 1997.|
|5||J. Ahn, et al., "High Quality Aultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N2O," J. Electrochem. Soc. V. 139, No. 9, L39-41, Sep. 1991.|
|6||Journal of the Electrochemical Society, No. 2, Manchester, NH, "Effect of Bottom on the Integrity of Interpolysilicon Ultrathin ONO (Oxide/Nitride/Oxide) Films," Yasushi Naito, Yuichi Hirofuji, and Hiroshi Iwasaki, Feb. 1990, pp. 635-638.|
|7||Kuroi, et al., "Novel NICE Structure for High Reliability and High Performance 0.25 Micron Dual Gate CMOS," IEDM, 1993, pp. 325-328.|
|8||Latice Press, Sunset Beach, California, "Silicon Processing for the VLSI Era, vol. 1, Process Technology," Stanley Wolf Ph.D., 1986, pp. 198-218.|
|9||Molle, P., et al., "Nitrogen Implantation for Local Oxidation of Silicon," Nuclear Instruments and Methods in Physics Research, Section-B: Bean Interactions with Materials and Atoms, vol. B55, No. 1/ 04, Apr. 2, 1991, pp. 860-865.|
|10||Molle, P., et al., "Nitrogen Implantation for Local Oxidation of Silicon," Nuclear Instruments and Methods in Physics Research, Section—B: Bean Interactions with Materials and Atoms, vol. B55, No. 1/ 04, Apr. 2, 1991, pp. 860-865.|
|11||Nuclear Instruments and Method in Physics, Elsevier Science Publishers B.V., North Holland, "Plasma Immersion Ion Implantation For ULSI Processing," Nathan W Cheung, 1991, pp. 811-820.|
|12||Patent Abstract of Japan, Publication No. 01183844; Publication Date: Jul. 21, 1989; Application Date: Jan. 19, 1988; Application No. 63008901.|
|13||S. Wolf, "Silicon Process for the VLSI Era," Lattice Press 1986, p. 321.|
|14||Schott, K., et al., "Blocking of Silicon Oxidation by Low-Dose Nitrogen Implantation," Applied Physics A. Solids and Surfaces, vol. A45, No. 1, Jan. 1, 1998, pp. 73-76.|
|15||Wolf et al., Silicon Processing for the VLSI Era vol. 1: Process Technology, Lattice Press 1986, pp. 429-446.|
|16||Wolf, Silicon Processing for the VLSI Era vol. 3: The Submicron MOSFET, Lattice Press 1995, pp. 495-496.|
|17||*||Wolf, Silicon Processing for the VLSI Era, vol. 2, Process Integration, Lattice Press, 1990, pp. 273-276, 1990.*|
|Brevet citant||Date de dépôt||Date de publication||Déposant||Titre|
|US6974737||16 mai 2003||13 déc. 2005||Spinnaker Semiconductor, Inc.||Schottky barrier CMOS fabrication method|
|US7052945 *||7 févr. 2003||30 mai 2006||Spinnaker Semiconductor, Inc.||Short-channel Schottky-barrier MOSFET device and manufacturing method|
|US7060568 *||30 juin 2004||13 juin 2006||Intel Corporation||Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit|
|US7402480||1 juil. 2004||22 juil. 2008||Linear Technology Corporation||Method of fabricating a semiconductor device with multiple gate oxide thicknesses|
|US7858458 *||14 juin 2005||28 déc. 2010||Micron Technology, Inc.||CMOS fabrication|
|US7915129||22 avr. 2009||29 mars 2011||Polar Semiconductor, Inc.||Method of fabricating high-voltage metal oxide semiconductor transistor devices|
|US8154025||18 sept. 2009||10 avr. 2012||Avolare 2, Llc||Schottky barrier CMOS device and method|
|US8823108||20 avr. 2006||2 sept. 2014||Micron Technology, Inc.||CMOS fabrication|
|US9214394||27 août 2014||15 déc. 2015||Micron Technology, Inc.||CMOS fabrication|
|US20030139002 *||7 févr. 2003||24 juil. 2003||Snyder John P.||Short-channel schottky-barrier MOSFET device and manufacturing method|
|US20030218218 *||21 mai 2002||27 nov. 2003||Samir Chaudhry||SRAM cell with reduced standby leakage current and method for forming the same|
|US20030235936 *||16 mai 2003||25 déc. 2003||Snyder John P.||Schottky barrier CMOS device and method|
|US20040041226 *||16 mai 2003||4 mars 2004||Snyder John P.||Schottky barrier CMOS device and method|
|US20050051815 *||21 oct. 2004||10 mars 2005||Snyder John P.||Short-channel Schottky-barrier MOSFET device and manufacturing method|
|US20050287730 *||30 août 2005||29 déc. 2005||Snyder John P||Schottky barrier CMOS device and method|
|US20060001106 *||30 juin 2004||5 janv. 2006||Metz Matthew V||Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit|
|US20060003511 *||1 juil. 2004||5 janv. 2006||Linear Technology Corporation||Method of fabricating a semiconductor device with multiple gate oxide thicknesses|
|US20060214237 *||5 mai 2006||28 sept. 2006||Metz Matthew V||Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit|
|US20060281239 *||14 juin 2005||14 déc. 2006||Suraj Mathew||CMOS fabrication|
|US20060281241 *||20 avr. 2006||14 déc. 2006||Suraj Mathew||CMOS fabrication|
|US20100006949 *||18 sept. 2009||14 janv. 2010||Avolare 2, Llc||Schottky barrier cmos device and method|
|US20100032771 *||16 oct. 2009||11 févr. 2010||Avolare 2, Llc||Short-channel schottky-barrier mosfet device and manufacturing method|
|US20100270625 *||22 avr. 2009||28 oct. 2010||Polar Semiconductor, Inc.||Method of fabricating high-voltage metal oxide semiconductor transistor devices|
|US20110175160 *||30 mars 2011||21 juil. 2011||Avolare 2, Llc||Short-channel schottky-barrier mosfet device and method of manufacture|
|CN1973368B||24 juin 2005||17 nov. 2010||英特尔公司|
|Classification aux États-Unis||257/369, 257/391, 438/276, 257/390, 257/374, 438/217, 438/981, 438/275, 257/607, 257/E27.064, 257/E21.639|
|Classification internationale||H01L27/092, H01L21/316, H01L21/8238, H01L27/088|
|Classification coopérative||Y10S438/981, H01L21/823857, H01L27/0922|
|Classification européenne||H01L27/092D, H01L21/8238J|
|8 déc. 1998||AS||Assignment|
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