US6716748B2 - Reaction chamber for processing a substrate wafer, and method for processing a substrate using the chamber - Google Patents
Reaction chamber for processing a substrate wafer, and method for processing a substrate using the chamber Download PDFInfo
- Publication number
- US6716748B2 US6716748B2 US10/047,814 US4781402A US6716748B2 US 6716748 B2 US6716748 B2 US 6716748B2 US 4781402 A US4781402 A US 4781402A US 6716748 B2 US6716748 B2 US 6716748B2
- Authority
- US
- United States
- Prior art keywords
- plate
- gas distributor
- reaction chamber
- flow
- substrate wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime, expires
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10101548A DE10101548C1 (en) | 2001-01-15 | 2001-01-15 | Reaction chamber used for processing a substrate wafer in the semiconductor industry comprises a wafer holder, a convection plate above the holder, a gas distribution plate arranged on one side surface of chamber and a flow plate |
DE10101548.8 | 2001-01-15 | ||
DE10101548 | 2001-01-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020092840A1 US20020092840A1 (en) | 2002-07-18 |
US6716748B2 true US6716748B2 (en) | 2004-04-06 |
Family
ID=7670592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/047,814 Expired - Lifetime US6716748B2 (en) | 2001-01-15 | 2002-01-15 | Reaction chamber for processing a substrate wafer, and method for processing a substrate using the chamber |
Country Status (2)
Country | Link |
---|---|
US (1) | US6716748B2 (en) |
DE (1) | DE10101548C1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080273867A1 (en) * | 2007-05-01 | 2008-11-06 | Mattson Technology Canada, Inc. | Irradiance pulse heat-treating methods and apparatus |
US9279727B2 (en) | 2010-10-15 | 2016-03-08 | Mattson Technology, Inc. | Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4365588A (en) * | 1981-03-13 | 1982-12-28 | Rca Corporation | Fixture for VPE reactor |
US5837555A (en) * | 1996-04-12 | 1998-11-17 | Ast Electronik | Apparatus and method for rapid thermal processing |
US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US5884412A (en) * | 1996-07-24 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
DE19747164A1 (en) | 1997-10-24 | 1999-05-06 | Siemens Ag | Substrate disc processing apparatus for simulation of silicon micro process |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US6198074B1 (en) * | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
US6375750B1 (en) * | 1995-07-10 | 2002-04-23 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor and method |
US6403475B1 (en) * | 1999-06-18 | 2002-06-11 | Hitachi, Ltd. | Fabrication method for semiconductor integrated device |
-
2001
- 2001-01-15 DE DE10101548A patent/DE10101548C1/en not_active Expired - Fee Related
-
2002
- 2002-01-15 US US10/047,814 patent/US6716748B2/en not_active Expired - Lifetime
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4365588A (en) * | 1981-03-13 | 1982-12-28 | Rca Corporation | Fixture for VPE reactor |
US6375750B1 (en) * | 1995-07-10 | 2002-04-23 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor and method |
US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
US5837555A (en) * | 1996-04-12 | 1998-11-17 | Ast Electronik | Apparatus and method for rapid thermal processing |
US5884412A (en) * | 1996-07-24 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
US6198074B1 (en) * | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
DE19747164A1 (en) | 1997-10-24 | 1999-05-06 | Siemens Ag | Substrate disc processing apparatus for simulation of silicon micro process |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US6403475B1 (en) * | 1999-06-18 | 2002-06-11 | Hitachi, Ltd. | Fabrication method for semiconductor integrated device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080273867A1 (en) * | 2007-05-01 | 2008-11-06 | Mattson Technology Canada, Inc. | Irradiance pulse heat-treating methods and apparatus |
US8005351B2 (en) * | 2007-05-01 | 2011-08-23 | Mattson Technology Canada, Inc. | Irradiance pulse heat-treating methods and apparatus |
US8693857B2 (en) | 2007-05-01 | 2014-04-08 | Mattson Technology, Inc. | Irradiance pulse heat-treating methods and apparatus |
US9279727B2 (en) | 2010-10-15 | 2016-03-08 | Mattson Technology, Inc. | Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed |
Also Published As
Publication number | Publication date |
---|---|
DE10101548C1 (en) | 2002-05-29 |
US20020092840A1 (en) | 2002-07-18 |
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Legal Events
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AS | Assignment |
Owner name: INFINEON TECHNOLOGIES AG, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KERSCH, ALFRED;REEL/FRAME:014959/0802 Effective date: 20020208 |
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Owner name: POLARIS INNOVATIONS LIMITED, IRELAND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INFINEON TECHNOLOGIES AG;REEL/FRAME:036575/0368 Effective date: 20150708 |
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