|Numéro de publication||US7048488 B1|
|Type de publication||Octroi|
|Numéro de demande||US 10/009,851|
|Date de publication||23 mai 2006|
|Date de dépôt||8 mai 2000|
|Date de priorité||7 mai 1999|
|État de paiement des frais||Payé|
|Autre référence de publication||CN1157761C, CN1349656A, DE60030968D1, DE60030968T2, EP1177571A1, EP1177571B1, WO2000068977A1|
|Numéro de publication||009851, 10009851, PCT/2000/297, PCT/NL/0/000297, PCT/NL/0/00297, PCT/NL/2000/000297, PCT/NL/2000/00297, PCT/NL0/000297, PCT/NL0/00297, PCT/NL0000297, PCT/NL000297, PCT/NL2000/000297, PCT/NL2000/00297, PCT/NL2000000297, PCT/NL200000297, US 7048488 B1, US 7048488B1, US-B1-7048488, US7048488 B1, US7048488B1|
|Inventeurs||Vladimir Ivanovich Kuznetsov, Theodorus Gerardus Maria Oosterlaken, Christianus Gerardus Maria Ridder, Ernst Hendrik August Granneman|
|Cessionnaire d'origine||Asm International N.V.|
|Exporter la citation||BiBTeX, EndNote, RefMan|
|Citations de brevets (41), Référencé par (12), Classifications (10), Événements juridiques (4)|
|Liens externes: USPTO, Cession USPTO, Espacenet|
The present invention relates to a method of transferring a wafer between a thermal treatment chamber and a thermal treatment installation.
U.S. Pat. No. 5,162,047 discloses a thermal treatment installation which comprises a thermal treatment chamber, a “wafer boat”/rings assembly, a loading device and a transport device. With this arrangement the loading device serves to place wafers in and to remove wafers from the assembly and the transport device serves to place the assembly in and remove the assembly from the thermal treatment chamber.
The assembly consists of a frame to which a large number of rings are joined equally spaced, with their flat sides positioned above one another. The rings are each provided with a recess, which is not specified in more detail, in the inner edge, on which a wafer can be placed by the loading device.
After loading a large number of wafers, the assembly is moved by the transport device to the thermal treatment chamber to subject all wafers, located on the recesses, simultaneously to a treatment in which a heat treatment takes place.
In installations as disclosed in U.S. Pat. No. 5,162,047 the wafers remain in contact with the rings during the entire heat treatment.
During heat treatment of a substrate, for example a silicon wafer, plastic deformation of the wafer can occur. In the case of silicon at temperatures higher than 900–1000° C. the mechanical strength of the wafer decreases substantially and plastic deformation can occur more easily than at room temperature. The deformation of silicon wafers occurs because crystal planes can shift over one another under the influence of stresses present or generated in the material. This is known by the term “slip”. This slip can lead to warping of the wafer such that this is detectable with the naked eye.
Two sources of stress which give rise to slip will be present in the material. Firstly, the force of gravity, which in the case of horizontally positioned wafers is exerted uniformly over the entire surface thereof, in combination with the wafer support, which in general takes place at only a few points. This leads to local mechanical stresses, in particular on and close to the support points, which are also termed gravitational stresses.
Secondly, there is a temperature gradient over the wafer which leads to a non-uniform expansion of the wafer with corresponding mechanical stresses, also referred to as thermal stresses. This temperature gradient over the wafer occurs in particular on introducing it into a reactor and removing it therefrom. In general the temperature in the reactor will be appreciable, for example 900–1000° C., in order to achieve an adequate throughput time. If the ambient temperature is room temperature, on introduction of the wafer into or removal of the wafer from the reactor a substantial temperature gradient will be produced, with the resultant stresses. After all, the thermal capacity is relatively low because of the limited thickness and the large radiating surface of the wafer.
In installations as disclosed in U.S. Pat. No. 5,162,047 the wafers are thus also subjected to a temperature difference during heating and cooling at those locations where there is contact with the ring, since the ring has a certain thermal capacity. So as not to allow temperature differences during loading into and unloading from the thermal treatment installation to become so large that mechanical stresses in the wafer lead to plastic deformation, transport of the combination into and out of the thermal treatment chamber must always take place at a suitable speed.
Moreover, the connection between the rings and the frame gives rise to an additional difference in thermal capacity in the rings which, as a result of the positioning of the connection, can lead to local deviation of the temperature in the ring and the wafer, as a result of which mechanical stresses can also be produced locally in the wafer during heating/cooling. Local adverse deformation of the wafer can occur as a result.
In some installations treatment is not carried out on a large number of wafers at the same time, as in U.S. Pat. No. 5,162,047, but, for reasons specific to the treatment process, only one wafer is treated at a time. For such thermal treatment installations in which only a single wafer is treated per thermal treatment it is customary according to the prior art to place the wafer in, or remove the wafer from, the thermal treatment chamber individually, that is to say directly with the aid of a transport mechanism and without an auxiliary support such as, for example, a wafer ring.
The present invention relates in particular to contact-free treatment of a wafer. For this treatment the wafer in a reactor is supported uniformly over the entire surface by a gas stream, so that no gravitational stresses can arise during the treatment. The top section and bottom section of the reactor, between which the wafer is accommodated, can be heated very uniformly so that no temperature gradient of any significance is produced over the wafer during the treatment. However, it has been found that during loading or unloading of the wafer the abovementioned stresses can still occur, as a result of which slip takes place. After all, according to the prior art the wafer is picked up by a cold gripper for introduction and removal, high local temperature gradients are produced close to the support points and slip occurs. Likewise, an appreciable temperature gradient is produced over the wafer as a whole. This gradient has two components: a linear and a radial component. The linear component arises because the wafer is withdrawn from between the two hot reactor bodies (top section and bottom section) in a linear movement. The radial component arises because the edge of the wafer is able to radiate its heat over a wider angle than the mid section of the wafer. The radial gradient in particular leads to harmful stresses.
The aim of the present invention is further to restrict or completely to preclude the slip in a wafer during transport into and out of the thermal treatment chamber and in particular during the contact-free treatment.
An aspect of the present invention involves a method of transferring wafers into and out of a thermal treatment chamber in a thermal treatment installation. The treatment chamber has a top section and a bottom section between which the wafer is accommodated during treatment. As illustrated in
It is pointed out that arranging a ring around a wafer in order to restrict the temperature gradient over the wafer is known per se. The so-called “rapid thermal processing system” with which a wafer is heated very rapidly with the aid of lamps is described in U.S. Pat. No. 4,468,259. With this system the wafer is mechanically supported and the radial temperature gradient in particular leads to slip because of heat loss at the edge of the wafer. This slip is appreciably reduced by arranging a ring which absorbs thermal radiation around the wafer holder with a diameter somewhat larger than the diameter of the wafer. However, this ring is not used for transport of the wafer into and out of the reactor, so that the abovementioned stresses still arise during loading/unloading. This also applies in the case of the ring arranged around a wafer as described in U.S. Pat. No. 5,334,257. Here again the thermal capacity of the edge region of the wafer is increased and the edge will heat up less rapidly and a less pronounced radial temperature gradient will thus be produced over the wafer.
In U.S. Pat. No. 4,468,259 the ring is located in a fixed position in the thermal treatment chamber. In U.S. Pat. No. 5,334,257 the rings are arranged in a wafer rack and the rings serve only as transport means when transporting all wafers simultaneously.
The rings according to the invention can, of course, be handled by any robot known from the prior art.
The invention also relates to a thermal treatment installation/ring combination, wherein said thermal treatment installation comprises a treatment chamber delimited by two sections located opposite one another, wherein at least one of said sections is provided with a gas supply for floating positioning of a wafer between said sections, wherein said ring is designed to be placed between said sections, wherein in the operating position the distance between said two sections at the location of said ring essentially corresponds to the thickness of said ring and wherein at least three radial gas passages are arranged between said ring and the section concerned. Using such a combination of thermal treatment installation and ring it is possible accurately to determine the horizontal position of a wafer in a floating wafer reactor. In general, when positioning the wafer horizontally a gas stream will move towards the wafer both from the bottom and from the top of the reactor chamber in order to position said wafer accurately between the top section and bottom section of the reactor. For positioning in the horizontal plane a ring which is provided with outflow openings for said gas can be arranged around the wafer. It has been found that if the wafer moves towards a particular edge of the ring the outflow opening located in that position will be closed off to some extent, as a result of which a rise in the pressure of the gas occurs between the ring and the related edge, as a result of which the ring is pushed back towards the centre again. This is promoted in that the other openings allow more gas through, as a result of which a lowering in pressure occurs at these locations. In this way, particularly stable positioning is obtained and it is possible to work with a very small width of the gap between wafer and ring, for example approximately 0.2 mm. As a result of the use of such a ring the construction of the reactor walls, that is to say the top section and bottom section, can be appreciably simplified and can be made essentially flat. The passage through which the gas flows between the ring and the wall of the reactor can be made either in the wall of said reactor or in the top or bottom of the ring or in both. Lateral positioning of the wafer in the reactor is provided with the aid of the constructions according to the invention.
During introduction and removal of the wafer/ring combination the wafer can bear on support points on the ring. However, it is also possible to provide a separate auxiliary element equipped with support pins which extend through grooves or openings made in the reactor walls or in the top or bottom of the ring as described above, the ring and the wafer bearing on said support pins during movement. In a preferred variant said auxiliary element is likewise annular.
In a further preferred embodiment of this variant the support pins are provided with internal channels which at one end open onto the contact surface with the wafer and at the other end are in communication with an internal channel in the auxiliary ring, which channel is connected to vacuum means in order to produce a vacuum in the channels. As a result of the vacuum the wafer is pressed against the contact surface of the support pins with a greater force than just by the force of gravity exerted on the wafer and the wafer will shift less rapidly in the horizontal plane during acceleration or retardation.
The invention also relates to a thermal wafer treatment installation/ring combination comprising a thermal wafer treatment installation having at least one receptacle for wafers, wherein said receptacle is constructed to receive a ring in such a way that the ring is removable and wherein each ring is designed to accommodate and support a wafer therein.
The invention will be explained in more detail below with reference to illustrative embodiments shown in the drawing. In the drawing:
A first embodiment of the ring according to the invention is shown in perspective in
After the wafer has been introduced into the reactor 10 and the reactor is closed in some way, gas streams 13 and 14 are activated, as a result of which the wafer conies away from the support pins 4 and starts to float and can be treated (
It must be understood that it is not necessary to allow the wafer to rest on the support points during transport. In principle it is also possible to provide an arrangement by means of which the wafer is in the floating state during transport. By this means it is guaranteed that there is no critical temperature transition at the support points.
As described above, the outer edge 2 of the ring 1 is made somewhat thicker. By this means mechanical strength is provided and the thermal capacity increases. The differences between inner edge 2 and outer edge 3 can comprise any construction conceivable in the state of the art. A few examples are given in
Moreover, it is possible to supply heat from the ring during transport of the wafer. For this purpose heating elements 16 can be fitted, as is shown in
A variant is shown in
A variant is shown in
Using the construction described in
Those skilled in the art will understand from the large number of variants that have been described above that further developments are possible without going beyond the scope of the present invention as described in the appended claims.
|Brevet cité||Date de dépôt||Date de publication||Déposant||Titre|
|US3947236||21 mars 1974||30 mars 1976||Lasch Jr Cecil A||Fluid bearing transfer and heat treating apparatus and method|
|US4468259||30 nov. 1982||28 août 1984||Ushio Denki Kabushiki Kaisha||Uniform wafer heating by controlling light source and circumferential heating of wafer|
|US4495024||25 août 1982||22 janv. 1985||Edward Bok||Method for deposition of fluid and gaseous media on substrates for their transport|
|US4575408||23 août 1983||11 mars 1986||Edward Bok||Method for floating transport of substrates|
|US4738748||27 sept. 1984||19 avr. 1988||Fujitsu Limited||Plasma processor and method for IC fabrication|
|US4860687||16 mars 1987||29 août 1989||U.S. Philips Corporation||Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface|
|US5162047||12 nov. 1991||10 nov. 1992||Tokyo Electron Sagami Limited||Vertical heat treatment apparatus having wafer transfer mechanism and method for transferring wafers|
|US5592581 *||18 juil. 1994||7 janv. 1997||Tokyo Electron Kabushiki Kaisha||Heat treatment apparatus|
|US5711811||28 nov. 1995||27 janv. 1998||Mikrokemia Oy||Method and equipment for growing thin films|
|US5788425||22 juin 1993||4 août 1998||Imation Corp.||Flexible system for handling articles|
|US5820367||18 sept. 1996||13 oct. 1998||Tokyo Electron Limited||Boat for heat treatment|
|US5879459||29 août 1997||9 mars 1999||Genus, Inc.||Vertically-stacked process reactor and cluster tool system for atomic layer deposition|
|US5897311||28 mai 1996||27 avr. 1999||Tokyo Electron Limited||Support boat for objects to be processed|
|US5983906 *||22 août 1997||16 nov. 1999||Applied Materials, Inc.||Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment|
|US6100505 *||27 mai 1999||8 août 2000||Advanced Micro Devices, Inc.||Hotplate offset ring|
|US6111225||21 févr. 1997||29 août 2000||Tokyo Electron Limited||Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures|
|US6167834 *||13 août 1992||2 janv. 2001||Applied Materials, Inc.||Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process|
|US6168668 *||25 nov. 1998||2 janv. 2001||Applied Materials, Inc.||Shadow ring and guide for supporting the shadow ring in a chamber|
|US6228171 *||29 janv. 1999||8 mai 2001||Tokyo Electron Ltd.||Heat processing apparatus|
|US6280183 *||1 avr. 1998||28 août 2001||Applied Materials, Inc.||Substrate support for a thermal processing chamber|
|US6325858 *||2 nov. 1998||4 déc. 2001||Asm America, Inc.||Long life high temperature process chamber|
|US6329304 *||21 avr. 2000||11 déc. 2001||A.S.M. International N.V.||Floating wafer reactor and method for the regulation of the temperature thereof|
|US6344632 *||31 oct. 1997||5 févr. 2002||Samsung Electronics Co., Ltd.||Round heating plate used in a heating chamber for semiconductor device manufacturing|
|US6347919 *||17 déc. 1999||19 févr. 2002||Eaton Corporation||Wafer processing chamber having separable upper and lower halves|
|US6355909 *||18 août 2000||12 mars 2002||Sandia Corporation||Method and apparatus for thermal processing of semiconductor substrates|
|US6399922 *||7 févr. 2001||4 juin 2002||Tokyo Electron Limited||Single-substrate-heat-treating apparatus for semiconductor process system|
|US6462411 *||4 déc. 1998||8 oct. 2002||Kokusai Electric Co., Ltd||Semiconductor wafer processing apparatus for transferring a wafer mount|
|US6551404 *||22 déc. 2000||22 avr. 2003||Asm International N.V.||Apparatus for treating a wafer|
|US6554906 *||7 nov. 2000||29 avr. 2003||Sumitomo Electric Industries, Ltd.||Wafer holder for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus using the same|
|US6559039 *||15 mai 2001||6 mai 2003||Applied Materials, Inc.||Doped silicon deposition process in resistively heated single wafer chamber|
|US6561798 *||6 juin 2001||13 mai 2003||Asm International N.V.||Apparatus for processing a wafer|
|US6719499 *||13 janv. 2000||13 avr. 2004||Asm International N.V.||Device for positioning a wafer|
|US6753508 *||22 mai 2002||22 juin 2004||Tokyo Electron Limited||Heating apparatus and heating method|
|US6776849 *||15 mars 2002||17 août 2004||Asm America, Inc.||Wafer holder with peripheral lift ring|
|US6805749 *||24 juin 2003||19 oct. 2004||Asm International, N.V.||Method and apparatus for supporting a semiconductor wafer during processing|
|US6824619 *||8 mars 2000||30 nov. 2004||Asm International N.V.||Method and device for rotating a wafer|
|EP0405301A2||19 juin 1990||2 janv. 1991||Applied Materials Inc.||Apparatus for handling semiconductor wafers|
|EP0821403A2||16 juil. 1997||28 janv. 1998||Applied Materials, Inc.||Semiconductor wafer support with graded thermal mass|
|GB2199022A||Titre non disponible|
|JPS63136532A||Titre non disponible|
|WO1998001890A1||8 juil. 1997||15 janv. 1998||Advanced Semiconductor Mat||Method and apparatus for contactless treatment of a semiconductor substrate in wafer form|
|Brevet citant||Date de dépôt||Date de publication||Déposant||Titre|
|US7758340 *||28 déc. 2006||20 juil. 2010||Tokyo Electron Limited||Heating device and heating method|
|US8057669||16 juin 2008||15 nov. 2011||Baldwin Filters, Inc.||Filter element and filter assembly including locking mechanism|
|US8128819||16 juin 2008||6 mars 2012||Baldwin Filters Inc.||Fluid filter, fluid filter assembly, and mounting method|
|US8241493||16 juin 2008||14 août 2012||Baldwin Filters, Inc.||Filter with ejection mechanism|
|US8465643||27 janv. 2012||18 juin 2013||Baldwin Filters, Inc.||Fluid filter, fluid filter assembly, and mounting method|
|US8603335||12 juil. 2012||10 déc. 2013||Baldwin Filters, Inc.||Filter with ejection mechanism|
|US8815090||16 juin 2008||26 août 2014||Baldwin Filters, Inc.||Filter with water separation device|
|US8991619||26 mars 2012||31 mars 2015||Baldwin Filters, Inc.||Filter assembly with water evacuation and methods|
|US9023202||17 oct. 2011||5 mai 2015||Baldwin Filters, Inc.||Filter element and filter assembly including locking mechanism|
|US20060004493 *||30 juin 2004||5 janv. 2006||Jack Hwang||Use of active temperature control to provide emmisivity independent wafer temperature|
|US20110097491 *||28 avr. 2011||Levy David H||Conveyance system including opposed fluid distribution manifolds|
|US20120097093 *||26 oct. 2010||26 avr. 2012||Applied Materials, Inc.||Load lock chamber, substrate processing system and method for venting|
|Classification aux États-Unis||414/152, 118/725, 392/418|
|Classification internationale||H01L21/00, H01L21/677, B65G25/00|
|Classification coopérative||H01L21/67784, H01L21/67109|
|Classification européenne||H01L21/67S2H4, H01L21/677F|
|6 nov. 2001||AS||Assignment|
Owner name: ASM INTERNATIONAL N.V., NETHERLANDS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KUZNETSOV, VLADIMIR IVANOVICH;OOSTERLAKEN, THEODORUS GERARDUS MARIA;RIDDER, CHRISTIANUS GERARDUS MARIA;AND OTHERS;REEL/FRAME:012700/0706
Effective date: 20011022
|21 nov. 2006||CC||Certificate of correction|
|21 oct. 2009||FPAY||Fee payment|
Year of fee payment: 4
|23 oct. 2013||FPAY||Fee payment|
Year of fee payment: 8