US7345313B2 - Nitride-based semiconductor component such as a light-emitting diode or a laser diode - Google Patents
Nitride-based semiconductor component such as a light-emitting diode or a laser diode Download PDFInfo
- Publication number
- US7345313B2 US7345313B2 US10/493,914 US49391404A US7345313B2 US 7345313 B2 US7345313 B2 US 7345313B2 US 49391404 A US49391404 A US 49391404A US 7345313 B2 US7345313 B2 US 7345313B2
- Authority
- US
- United States
- Prior art keywords
- semiconductor component
- semiconductor
- contact metalization
- recesses
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10152922.8 | 2001-10-26 | ||
DE10152922A DE10152922B4 (en) | 2001-10-26 | 2001-10-26 | Nitride-based semiconductor device |
PCT/DE2002/004026 WO2003038913A2 (en) | 2001-10-26 | 2002-10-28 | Nitride-based semiconductor component |
Publications (2)
Publication Number | Publication Date |
---|---|
US20050072982A1 US20050072982A1 (en) | 2005-04-07 |
US7345313B2 true US7345313B2 (en) | 2008-03-18 |
Family
ID=7703828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/493,914 Expired - Lifetime US7345313B2 (en) | 2001-10-26 | 2002-10-28 | Nitride-based semiconductor component such as a light-emitting diode or a laser diode |
Country Status (4)
Country | Link |
---|---|
US (1) | US7345313B2 (en) |
JP (1) | JP2005507179A (en) |
DE (1) | DE10152922B4 (en) |
WO (1) | WO2003038913A2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
US20100276722A1 (en) * | 2007-09-27 | 2010-11-04 | Elmar Baur | Optoelectronic Semiconductor Chip, Optoelectronic Component and a Method for Producing an Optoelectronic Component |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
US8115217B2 (en) | 2008-12-11 | 2012-02-14 | Illumitex, Inc. | Systems and methods for packaging light-emitting diode devices |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10261425A1 (en) * | 2002-12-30 | 2004-07-22 | Osram Opto Semiconductors Gmbh | Semiconductor laser diode comprises semiconductor body having photon emitting active layer based on nitride-compound semiconductor, for use in electronics and semiconductor technology |
DE102004037868A1 (en) | 2004-04-30 | 2005-11-24 | Osram Opto Semiconductors Gmbh | A radiation emitting and / or receiving semiconductor device and method for patterning a contact on a semiconductor body |
DE102008038750A1 (en) * | 2008-08-12 | 2010-02-18 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for its production |
KR101007117B1 (en) | 2008-10-16 | 2011-01-11 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
DE102008056371A1 (en) * | 2008-11-07 | 2010-05-12 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
JP5311408B2 (en) * | 2008-12-26 | 2013-10-09 | シャープ株式会社 | Nitride semiconductor light emitting device |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5260588A (en) * | 1991-05-21 | 1993-11-09 | Eastman Kodak Company | Light-emitting diode array |
JPH09107125A (en) | 1996-09-17 | 1997-04-22 | Nichia Chem Ind Ltd | Gallium nitride compound semiconductor light emitting device |
EP0892443A2 (en) | 1997-07-16 | 1999-01-20 | Sanyo Electric Co., Ltd. | Electrode of n-type nitride semiconductor, semiconductor device having the electrode, and method of fabricating the same |
US5874747A (en) | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JPH11177134A (en) | 1997-12-15 | 1999-07-02 | Sharp Corp | Manufacture of semiconductor element, semiconductor, manufacture of light emitting element, and light emitting element |
US6185238B1 (en) | 1997-02-21 | 2001-02-06 | Kabushiki Kaisha Toshiba | Nitride compound semiconductor laser and its manufacturing method |
US6242761B1 (en) * | 1997-02-21 | 2001-06-05 | Kabushiki Kaisha Toshiba | Nitride compound semiconductor light emitting device |
WO2001047036A1 (en) | 1999-12-22 | 2001-06-28 | Lumileds Lighting, U.S., Llc | Iii-nitride light-emitting device with increased light generating capability |
US20010022367A1 (en) | 1993-04-28 | 2001-09-20 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor |
WO2001073858A1 (en) | 2000-03-31 | 2001-10-04 | Toyoda Gosei Co., Ltd. | Group-iii nitride compound semiconductor device |
US20010032985A1 (en) * | 1999-12-22 | 2001-10-25 | Bhat Jerome C. | Multi-chip semiconductor LED assembly |
DE10107472A1 (en) | 2000-05-23 | 2001-12-06 | Osram Opto Semiconductors Gmbh | Component for optoelectronics and method for its production |
US20020053665A1 (en) * | 2000-09-08 | 2002-05-09 | Yuhzoh Tsuda | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same |
US20030164502A1 (en) | 2000-05-23 | 2003-09-04 | Johannes Baur | Optoelectronic component and a method for producing the same |
-
2001
- 2001-10-26 DE DE10152922A patent/DE10152922B4/en not_active Expired - Fee Related
-
2002
- 2002-10-28 JP JP2003541069A patent/JP2005507179A/en active Pending
- 2002-10-28 WO PCT/DE2002/004026 patent/WO2003038913A2/en active Application Filing
- 2002-10-28 US US10/493,914 patent/US7345313B2/en not_active Expired - Lifetime
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5260588A (en) * | 1991-05-21 | 1993-11-09 | Eastman Kodak Company | Light-emitting diode array |
US20010022367A1 (en) | 1993-04-28 | 2001-09-20 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor |
US5874747A (en) | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JPH09107125A (en) | 1996-09-17 | 1997-04-22 | Nichia Chem Ind Ltd | Gallium nitride compound semiconductor light emitting device |
US6185238B1 (en) | 1997-02-21 | 2001-02-06 | Kabushiki Kaisha Toshiba | Nitride compound semiconductor laser and its manufacturing method |
US6242761B1 (en) * | 1997-02-21 | 2001-06-05 | Kabushiki Kaisha Toshiba | Nitride compound semiconductor light emitting device |
EP0892443A2 (en) | 1997-07-16 | 1999-01-20 | Sanyo Electric Co., Ltd. | Electrode of n-type nitride semiconductor, semiconductor device having the electrode, and method of fabricating the same |
JPH11177134A (en) | 1997-12-15 | 1999-07-02 | Sharp Corp | Manufacture of semiconductor element, semiconductor, manufacture of light emitting element, and light emitting element |
WO2001047036A1 (en) | 1999-12-22 | 2001-06-28 | Lumileds Lighting, U.S., Llc | Iii-nitride light-emitting device with increased light generating capability |
US20010032985A1 (en) * | 1999-12-22 | 2001-10-25 | Bhat Jerome C. | Multi-chip semiconductor LED assembly |
WO2001073858A1 (en) | 2000-03-31 | 2001-10-04 | Toyoda Gosei Co., Ltd. | Group-iii nitride compound semiconductor device |
EP1278249A1 (en) | 2000-03-31 | 2003-01-22 | Toyoda Gosei Co., Ltd. | Group-iii nitride compound semiconductor device |
US20030107053A1 (en) * | 2000-03-31 | 2003-06-12 | Toshiya Uemura | Group-III nitride compound semiconductor device |
DE10107472A1 (en) | 2000-05-23 | 2001-12-06 | Osram Opto Semiconductors Gmbh | Component for optoelectronics and method for its production |
US20030164502A1 (en) | 2000-05-23 | 2003-09-04 | Johannes Baur | Optoelectronic component and a method for producing the same |
US20020053665A1 (en) * | 2000-09-08 | 2002-05-09 | Yuhzoh Tsuda | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
US20100284167A1 (en) * | 2006-01-05 | 2010-11-11 | Duong Dung T | Separate optical device for directing light from an led |
US7968896B2 (en) | 2006-01-05 | 2011-06-28 | Illumitex, Inc. | Separate optical device for directing light from an LED |
US9574743B2 (en) | 2006-01-05 | 2017-02-21 | Illumitex, Inc. | Separate optical device for directing light from an LED |
US8896003B2 (en) | 2006-01-05 | 2014-11-25 | Illumitex, Inc. | Separate optical device for directing light from an LED |
US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
US8791548B2 (en) | 2007-09-27 | 2014-07-29 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip, optoelectronic component and a method for producing an optoelectronic component |
US20100276722A1 (en) * | 2007-09-27 | 2010-11-04 | Elmar Baur | Optoelectronic Semiconductor Chip, Optoelectronic Component and a Method for Producing an Optoelectronic Component |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
US8263993B2 (en) | 2008-02-08 | 2012-09-11 | Illumitex, Inc. | System and method for emitter layer shaping |
US8115217B2 (en) | 2008-12-11 | 2012-02-14 | Illumitex, Inc. | Systems and methods for packaging light-emitting diode devices |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US9086211B2 (en) | 2009-08-20 | 2015-07-21 | Illumitex, Inc. | System and method for color mixing lens array |
Also Published As
Publication number | Publication date |
---|---|
WO2003038913A2 (en) | 2003-05-08 |
DE10152922B4 (en) | 2010-05-12 |
JP2005507179A (en) | 2005-03-10 |
DE10152922A1 (en) | 2003-05-15 |
US20050072982A1 (en) | 2005-04-07 |
WO2003038913A3 (en) | 2004-01-29 |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:STRAUSS, UWE;WEIMAR, ANDREAS;REEL/FRAME:016045/0330 Effective date: 20040601 |
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Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
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Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 12 |
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AS | Assignment |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OSRAM GMBH;REEL/FRAME:051381/0694 Effective date: 20191218 |
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Owner name: OSRAM OLED GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OSRAM OPTO SEMICONDUCTORS GMBH;REEL/FRAME:051467/0906 Effective date: 20191218 |