US7408216B2 - Device, system, and method for a trench capacitor having micro-roughened semiconductor surfaces - Google Patents

Device, system, and method for a trench capacitor having micro-roughened semiconductor surfaces Download PDF

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US7408216B2
US7408216B2 US11/484,541 US48454106A US7408216B2 US 7408216 B2 US7408216 B2 US 7408216B2 US 48454106 A US48454106 A US 48454106A US 7408216 B2 US7408216 B2 US 7408216B2
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capacitor plate
source
drain region
memory device
trench
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US20060249777A1 (en
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Leonard Forbes
Joseph E. Geusic
Kie Y. Ahn
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Micron Technology Inc
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Micron Technology Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • H01L28/82Electrodes with an enlarged surface, e.g. formed by texturisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/038Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Definitions

  • the embodiments of the present invention relate generally to the field of integrated circuits and, in particular, to circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same.
  • Electronic systems such as microprocessor based computers, typically operate on data that is stored in electronic form in a memory device.
  • the memory device stores the data at specified voltage levels in an array of cells. Conventionally, the voltage levels represent that the data is either a logical “1” or a logical “0.”
  • DRAM dynamic random access memory
  • the cells store the data as a charge on a capacitor.
  • sense amplifiers detect the level of charge stored on a particular capacitor so as to produce a logical “1” or a logical “0” output based on the stored charge.
  • the capacitor in each cell covers a smaller surface area or footprint on the substrate, chip or wafer. If the structure of the capacitor is left unchanged, these smaller capacitors cannot store as much charge because the storage capacity of a typical capacitor is proportional to the size of its storage electrodes. Unfortunately, at some point, the capacitors become too small to store sufficient charge and sense amplifiers in the memory device are unable to differentiate between charge due to noise and the charge due to data stored in the cell. This can lead to errors in the output of a memory device making the memory device useless in the electronic system.
  • capacitors Conventionally, memory manufacturers have used one of two types of capacitors in DRAM devices.
  • Stacked capacitors are typically formed from polysilicon and are positioned above the conventional working surface of the semiconductor chip or wafer on which the memory device is formed. A contact couples the capacitor to a transistor in the memory cell.
  • Some manufacturers use “tench” capacitors instead of stacked capacitors.
  • Trench capacitors are typically formed in a trench in the semiconductor wafer or chip. The trench is filled with polysilicon that acts as one plate of the capacitor. In this case, the semiconductor wafer or chip acts as the second plate of the capacitor.
  • FIG. 1 is a perspective view of an embodiment of a portion of an array of memory cells according to the teachings of the embodiments of the invention.
  • FIGS. 2 , 3 , 4 and 5 are cross sectional views that illustrate an embodiment of a method for forming an array of memory cells according to the teachings of the embodiments of the invention.
  • FIG. 6 is a cross sectional view of another embodiment of a memory cell according to the teachings of the embodiments of the invention.
  • FIG. 7 is a block diagram of an embodiment of an electronic system and memory device according to the teachings of the embodiments of the invention.
  • wafer and substrate are interchangeably used to refer generally to any structure on which integrated circuits are formed, and also to such structures during various stages of integrated circuit fabrication. Both terms include doped and undoped semiconductors, epitaxial layers of a semiconductor on a supporting semiconductor or insulating material, combinations of such layers, as well as other such structures that are known in the art.
  • horizontal as used in this application is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate.
  • vertical refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as “on”, “side” (as in “sidewall”), “higher”, “lower”, “over” and “under” are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate.
  • FIG. 1 is a perspective view of an embodiment of a portion of an array of memory cells indicated generally at 100 and constructed according to the teachings of the embodiments of the invention. Each memory cell is constructed in a similar manner. Thus, only memory cell 102 D is described herein in detail.
  • Memory cell 102 D includes pillar 104 of single crystal semiconductor material. Pillar 104 is divided into first source/drain region 106 , body region 108 , and second source/drain region 110 to form access transistor 111 . Pillar 104 extends vertically outward from substrate 101 , for example, p-silicon.
  • First source/drain region 106 and second source/drain region 110 each comprise, for example, heavily doped n-type single crystalline silicon (N+silicon) and body region 108 comprises lightly doped p-type single crystalline silicon (P ⁇ silicon).
  • Word line 112 passes body region 108 of access transistor 111 in isolation trench 114 .
  • Word line 112 is separated from body region 108 of access transistor 111 by gate oxide 116 such that the portion of word line 112 adjacent to body region 108 operates as a gate for access transistor 111 .
  • Word line 112 may comprise, for example, N+poly-silicon material that is deposited in isolation trench 114 .
  • Cell 102 D is coupled in a column with cell 102 A by bit line 118 .
  • Memory cell 102 D also includes storage capacitor 119 for storing data in the cell.
  • a first plate 110 of capacitor 119 for memory cell 102 D is integral with second source/drain region 110 of access transistor 111 .
  • Surface 117 of second source/drain region 110 comprises a “micro-roughened” surface. This micro-roughened surface is formed by coating second source/drain region 110 with poly-silicon and treating the poly-silicon so as to form pores in surface 117 . This increases the surface area of second source/drain region 110 and, thus, increases the capacitance of capacitor 119 .
  • the pores in surface 117 can be formed, for example, using the etching techniques described below.
  • Second plate 120 of capacitor 119 is common to all of the capacitors of array 100 .
  • Second plate 120 comprises a mesh or grid of n+poly-silicon formed in deep trenches that surrounds at least a portion of second source/drain region 110 of each pillars 104 in memory cells 102 A through 102 D.
  • Second plate 120 is grounded by contact with substrate 101 underneath the trenches.
  • Second plate 120 is separated from source/drain region 110 by gate insulator 122 .
  • FIGS. 2 , 3 , 4 and 5 are cross sectional views that illustrate an embodiment of a method for forming an array of memory cells according to the embodiments of the invention.
  • FIG. 2 is a cross sectional view that shows a portion of an array of memory cells, indicated generally at 200 .
  • Array 200 includes pillars of semiconductor material 202 and 204 that are formed either outwardly from a bulk silicon wafer or outwardly from a silicon-on-insulator (SOI) structure.
  • Pillar 202 includes first source/drain region 206 , body region 208 and second source/drain region 210 . As shown, first source/drain region 206 and second source/drain region 210 comprise heavily doped n-type semiconductor material and body region 208 comprises p-type semiconductor material.
  • Pillar 204 is similarly constructed. Pillars 202 and 204 form the basis for vertical transistors used in array 200 . It is noted that the conductivity types of the various regions of the pillars can be swapped so as to allow the formation of p-channel transistors.
  • the silicon pillar structure of a vertical transistor of array 200 may be formed using, for example, the techniques shown and described with respect to FIGS. 5A-5J of co-pending application Ser. No. 08/944,890, entitled “Circuit and Method for an Open Bit Line Memory Cell with A Vertical Transistor and Trench Plate Trench Capacitor,” filed on Oct. 6, 1997 or with respect to FIGS. 5A-5M of application Ser. No. 08/939,742, entitled “Circuit and Method for a Folded Bit Line Memory Cell with Vertical Transistors and a Trench Capacitor,” filed on Oct. 6, 1997, which applications are incorporated herein by reference.
  • the silicon pillars can be constructed to provide for a body contact for the transistors using techniques described with respect to FIGS. 5A-5P and 6 A to 6 O of co-pending, commonly assigned application Ser. No. 08/944,312, entitled “Circuit and Method for a Folded Bit Line Memory Using Trench Plate Capacitor Cells With Body Bias Contacts,” filed on Oct. 6, 1997 or with respect to FIGS. 5A-5O of application Ser. No. 08/939,732, entitled “Circuit and Method for an Open Bit Line Memory Cell With A Vertical Transistor and Trench Plate Trench Capacitor,” filed on Oct. 6, 1997, which applications are also incorporated herein by reference. Further, other conventional techniques for forming vertical transistors can also be used.
  • nitride layer 212 Si 3 N 4
  • nitride pad 213 is also deposited in trench 214 to protect the bottom of trench 214 during subsequent processing steps.
  • nitride pad 213 may be used when an SOI structure is used and the bottom of trench 214 is an insulator such as an oxide.
  • Trench 214 is filled with an oxide such that the entire structure of array 200 is covered.
  • the oxide material outside of trench 214 is removed by, for example, chemical/mechanical polishing down to nitride layer 212 .
  • the oxide is further recessed into trench 214 to form oxide layer 216 as shown.
  • Nitride masking layer 218 (Si 3 N 4 ) is next deposited to protect body region 208 and second source drain region 210 during the formation of a micro-roughened surface. It is noted that masking layer 218 can be formed of any other material that can withstand a 6% aqueous solution of hydrofluoric acid (HF) or other etchant used to form a micro-roughened surface on first source/drain region 206 .
  • HF hydrofluoric acid
  • nitride mask layer 218 is directionally etched to leave nitride mask layer 218 on selected surfaces of pillars 202 and 204 .
  • Oxide layer 216 is removed by, for example, an etching process.
  • Amorphous silicon is deposited in trench 214 to form layer 220 with a thickness on the order of 10 to 40 nanometers (nm).
  • the structure is heated to a sufficient temperature such that impurities diffuse out from first source/drain region 206 into layer 220 .
  • layer 220 becomes polysilicon that is doped to be the same conductivity type as first source/drain region 206 .
  • An etch that preferentially attacks intrinsic, undoped polysilicon is used to remove layer 220 from surfaces other than the surface of first source/drain region 206 .
  • Surface 221 of layer 220 is next roughened to provide increased surface area for the trench capacitors of array 200 .
  • Surface 221 can be roughened in at least two different ways. First, layer 220 can be etched in a solution containing phosphoric acid (H 3 PO 4 ). This forms micro-roughened surface 222 on polysilicon layer 220 in trench 214 as shown in FIG. 4 .
  • H 3 PO 4 phosphoric acid
  • FIG. 5 is a schematic diagram that illustrates an embodiment of a layout of equipment used to carry out the anodic etch.
  • Bottom surface 246 of semiconductor wafer 201 is coupled to voltage source 234 by positive electrode 230 .
  • negative electrode 232 is coupled to voltage source 234 and is placed in a bath of 6% aqueous solution of hydrofluoric acid (HF) on surface 245 of semiconductor wafer 201 .
  • HF hydrofluoric acid
  • illumination equipment 236 is also included because the surface to be roughened is n-type semiconductor material. When p-type semiconductor material is used, the illumination equipment is not required. Illumination equipment 236 assures that there is a sufficient concentration of holes in layer 220 as required by the anodic etching process. Illumination equipment 236 includes lamp 238 , IR filter 240 , and lens 242 . Illumination equipment 236 focuses light on surface 246 of semiconductor wafer 201 .
  • layer 220 provides a high density of nucleation sites that are used by the anodic etch to roughen the surface of layer 220 .
  • Voltage source 234 is turned on and provides a voltage across positive and negative electrodes 230 and 232 .
  • Etching current flows from positive electrode 230 to surface 245 . This current forms pores in surface 221 of layer 220 .
  • illumination equipment illuminates surface 246 of semiconductor wafer 201 so as to assure a sufficient concentration of holes for the anodic etching process.
  • the anodic etching process produces a porous or roughened surface 222 on layer 220 as shown in FIG. 4 such that the effective surface area of first source/drain region 206 is increased.
  • the size and shape of the pores in layer 220 depends on, for example, the anodization parameters such as HF concentration, current density, and light illumination.
  • the spatial structure of the pores reflects the available paths for the etching current to flow from surface 245 to positive electrode 230 .
  • the approximate diameter of the pores can be controlled with typically the smallest pore diameter on the order of 2 nanometers.
  • Array 200 is completed using, for example, the techniques described in the applications incorporated by reference above.
  • FIG. 6 is a cross sectional view of another embodiment of a memory cell according to the teachings of the embodiments of the invention.
  • Memory cell 600 includes a conventional lateral transistor 602 with first source/drain region 604 , body region 606 and second source/drain region 608 .
  • Transistor 602 also includes gate 610 that may be formed as part of a word line in a memory array as is known in the art.
  • Bit line 612 is coupled to first source/drain region 604 .
  • Memory cell 600 also includes trench capacitor 614 .
  • Substrate 616 forms a first plate of trench capacitor 614 .
  • Surface 618 of substrate 616 in trench 620 is formed with a micro-roughened surface using, for example, one of the techniques described above by depositing and etching a polysilicon layer in trench 620 .
  • Trench capacitor 614 also includes dielectric layer 622 that separates surface 618 from second plate 624 .
  • Second plate 624 comprises, for example, poly-silicon.
  • Substrate 616 comprises single crystal silicon. A layer of polysilicon material is deposited on a surface of the single crystal silicon of substrate 616 in forming micro-roughened surface 618 .
  • Second plate 624 of trench capacitor 614 is coupled to second source/drain region 608 by polysilicon strap 630 .
  • transistor 602 comprises an n-channel transistor with heavily doped n-type source/drain regions and a body region formed in lightly doped p-type silicon well.
  • substrate 616 comprises a heavily doped p-type semiconductor substrate. Since substrate 616 comprises p-type material, the anodic etch, without illumination, can be used to form micro-roughened surface 618 .
  • Memory cell 600 is included in an array of similar memory cells to store and retrieve data using conventional techniques.
  • FIG. 7 is a block diagram of an illustrative embodiment of the invention.
  • This embodiment includes memory device 700 that is coupled to electronic system 702 by control lines 704 , address lines 706 and input/output (I/O) lines 708 .
  • Electronic system 702 comprises, for example, a microprocessor, a processor based computer, microcontroller, memory controller, a chip set or other appropriate system for reading and writing data in a memory device.
  • Memory device 700 includes array of memory cells 710 that is coupled to word line decoder 714 and sense amplifier 711 .
  • Array of memory cells 710 is constructed with memory cells that include trench capacitors with a micro-roughened surface that is formed using, for example, one of the techniques described above.
  • Word line decoder 714 includes word line drivers that are coupled to word lines of array 710 .
  • Sense amplifier 711 is coupled to bit line decoder 712 .
  • Bit line decoder 712 and word line decoder 714 are coupled to address lines 706 .
  • Bit line decoder 712 is coupled to I/O circuit 716 .
  • I/O circuit 716 is coupled to I/O lines 708 .
  • Control circuit 718 is coupled to control lines 704 , sense amplifier 711 , word line decoder 714 , bit line decoder 712 , and I/O circuit 716 .
  • electronic system 702 provides signals on address lines 706 and control lines 704 when data is to be read from or written to a cell of array 710 .
  • Word line decoder 714 determines the word line of a selected cell of array 710 using the address provided on address lines 706 .
  • bit line decoder 712 determines the bit line of the selected cell of array 710 .
  • sense amplifier 711 detects the value stored in the selected cell based on bit lines of array 710 .
  • Sense amplifier 711 provides this voltage to I/O circuit 716 which, in turn, passes data to electronic system 702 over I/O lines 708 .
  • I/O circuit 716 passes data from I/O lines 708 to sense amplifier 711 for storage in the selected cell of array 710 .
  • Some embodiments of the invention include a trench capacitor with increased surface area is described which is formed by depositing a layer of polysilicon in a trench in a semiconductor substrate and etching the polysilicon to produce a porous surface for the trench capacitor.
  • a method for forming a trench capacitor includes forming a trench in a semiconductor substrate.
  • a conformal layer of semiconductor material is deposited in the trench.
  • the surface of the conformal layer of semiconductor material is roughened.
  • An insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material.
  • a polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench.
  • a method for forming a memory cell with a trench capacitor includes forming a transistor including first and second source/drain regions, a body region and a gate in a layer of semiconductor material on a substrate. Further, a trench is formed in the layer of semiconductor material and a conformal layer of semiconductor material is formed in the trench. The surface of the conformal layer of semiconductor material is roughened and an insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material. A polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench such that the polycrystalline semiconductor plate forms one of the plates of the trench capacitor.
  • the trench capacitor is coupled to one of the first source/drain regions of the transistor.
  • a memory cell in another embodiment, includes a lateral transistor formed in a layer of semiconductor material outwardly from a substrate.
  • the transistor includes a first source/drain region, a body region and a second source/drain region.
  • a trench capacitor is formed in a trench and coupled to the first source/drain region.
  • the trench capacitor includes a polycrystalline semiconductor plate formed in the trench that is coupled to the first source/drain region.
  • the trench capacitor also includes a second plate formed by the substrate with a surface of the substrate in the trench roughened by etching a polycrystalline semiconductor material on the surface of the substrate.
  • the trench capacitor also includes an insulator layer that separates the polycrystalline semiconductor plate from the roughened surface of the substrate.
  • a memory cell in another embodiment, includes a vertical transistor that is formed outwardly from a substrate.
  • the transistor includes a first source/drain region, a body region and a second source/drain region that are vertically aligned.
  • a surface of the first source/drain region is roughened by etching a polycrystalline semiconductor material on a surface of the first source/drain region.
  • a trench capacitor is also included.
  • the trench capacitor includes a plate that is formed in a trench that surrounds the roughened surface of the first source/drain region of the transistor.
  • a memory device in another embodiment, includes an array of memory cells. Each memory cell includes an access transistor that is coupled to a trench capacitor. A first plate of the trench capacitor includes a micro-roughened surface of porous polysilicon. A second plate of the trench capacitor is disposed adjacent to the first plate. A number of bit lines are each selectively coupled to a number of the memory cells at a first source/drain region of the access transistor. A number of word lines are disposed substantially orthogonal to the bit lines and are coupled to gates of a number of access transistors. A row decoder is coupled to the word lines and a column decoder is coupled to the bit lines so as to selectively access the cells of the array.

Abstract

Some embodiments of the invention include a memory cell having a vertical transistor and a trench capacitor. The trench capacitor includes a capacitor plate with a roughened surface for increased surface area. Other embodiments are described and claims.

Description

RELATED APPLICATIONS
This application is a Continuation of U.S. application Ser. No. 09/467,992, filed Dec. 20, 1999 now U.S. Pat. No. 7,084,451, which is a Divisional of U.S. application Ser. No. 09/010,729, filed Jan. 22, 1998, now U.S. Pat. No. 6,025,225, both of which are incorporated herein by reference.
TECHNICAL FIELD
The embodiments of the present invention relate generally to the field of integrated circuits and, in particular, to circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same.
BACKGROUND
Electronic systems, such as microprocessor based computers, typically operate on data that is stored in electronic form in a memory device. The memory device stores the data at specified voltage levels in an array of cells. Conventionally, the voltage levels represent that the data is either a logical “1” or a logical “0.” In dynamic random access memory (DRAM) devices, for example, the cells store the data as a charge on a capacitor. When the data is read from the memory device, sense amplifiers detect the level of charge stored on a particular capacitor so as to produce a logical “1” or a logical “0” output based on the stored charge.
As the size of memory devices decreases, the capacitor in each cell covers a smaller surface area or footprint on the substrate, chip or wafer. If the structure of the capacitor is left unchanged, these smaller capacitors cannot store as much charge because the storage capacity of a typical capacitor is proportional to the size of its storage electrodes. Unfortunately, at some point, the capacitors become too small to store sufficient charge and sense amplifiers in the memory device are unable to differentiate between charge due to noise and the charge due to data stored in the cell. This can lead to errors in the output of a memory device making the memory device useless in the electronic system.
Conventionally, memory manufacturers have used one of two types of capacitors in DRAM devices. First, many manufacturers use “stacked” capacitors to store data for the memory cell. Stacked capacitors are typically formed from polysilicon and are positioned above the conventional working surface of the semiconductor chip or wafer on which the memory device is formed. A contact couples the capacitor to a transistor in the memory cell. Some manufacturers use “tench” capacitors instead of stacked capacitors. Trench capacitors are typically formed in a trench in the semiconductor wafer or chip. The trench is filled with polysilicon that acts as one plate of the capacitor. In this case, the semiconductor wafer or chip acts as the second plate of the capacitor.
Designers have experimented with various configurations of capacitors, both stacked and trench, to maintain the capacitance as the footprint available for the capacitor decreases. In the area of stacked capacitors, designers have used texturization, stacked V-shaped plates and other shaped plates to increase the surface area of the plates without increasing the footprint of the capacitor. For example, designers have developed techniques to produce hemispherical grains on the surface of one polysilicon plate of the stacked capacitor. This roughly doubles the storage capacity of the capacitor. Researchers have also described techniques for further increasing the surface area of the polysilicon plate, and thus the storage capacity of the capacitor, by using phosphoric acid to create pores in the polysilicon plate. See, Watanabe, A Novel Stacked Capacitor with Porous-Si Electrodes for High Density DRAMs, Symposium on VLSI Technology, pp. 17-18, 1993. With this technique, it is claimed that a 3.4 times increase in capacitance can be achieved.
One problem with the use of stacked capacitors is their positioning above the surface of the substrate. This positioning can interfere with the proper functioning of the equipment used to fabricate other parts of a larger circuit.
Conventionally, as the footprint available for trench capacitors has decreased, the manufacturers have used deeper trenches to maintain sufficient storage capacity of the trench capacitor. IBM has developed another technique in an attempt to maintain sufficient storage capacity as the footprint of the trench capacitor decreases. This technique uses an anodic etch to create pores in the single crystalline silicon in the trench of the trench capacitor. See, U.S. Pat. No. 5,508,542 (the '542 Patent). One problem with this technique is the lack of control over the distribution of the pores in the surface of the single crystalline silicon. Thus, the '542 Patent does not provide a technique that can be used reliably for large scale production of memory devices.
For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for a realizable trench capacitor with increased surface area compared to prior art capacitors for use in high-density circuits such as dynamic random access memories.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a perspective view of an embodiment of a portion of an array of memory cells according to the teachings of the embodiments of the invention.
FIGS. 2, 3, 4 and 5 are cross sectional views that illustrate an embodiment of a method for forming an array of memory cells according to the teachings of the embodiments of the invention.
FIG. 6 is a cross sectional view of another embodiment of a memory cell according to the teachings of the embodiments of the invention.
FIG. 7 is a block diagram of an embodiment of an electronic system and memory device according to the teachings of the embodiments of the invention.
DETAILED DESCRIPTION
In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific illustrative embodiments in which the embodiments of the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the embodiments of the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the spirit and scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense.
In the following description, the terms wafer and substrate are interchangeably used to refer generally to any structure on which integrated circuits are formed, and also to such structures during various stages of integrated circuit fabrication. Both terms include doped and undoped semiconductors, epitaxial layers of a semiconductor on a supporting semiconductor or insulating material, combinations of such layers, as well as other such structures that are known in the art.
The term “horizontal” as used in this application is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate. The term “vertical” refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as “on”, “side” (as in “sidewall”), “higher”, “lower”, “over” and “under” are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate.
FIG. 1 is a perspective view of an embodiment of a portion of an array of memory cells indicated generally at 100 and constructed according to the teachings of the embodiments of the invention. Each memory cell is constructed in a similar manner. Thus, only memory cell 102D is described herein in detail. Memory cell 102D includes pillar 104 of single crystal semiconductor material. Pillar 104 is divided into first source/drain region 106, body region 108, and second source/drain region 110 to form access transistor 111. Pillar 104 extends vertically outward from substrate 101, for example, p-silicon. First source/drain region 106 and second source/drain region 110 each comprise, for example, heavily doped n-type single crystalline silicon (N+silicon) and body region 108 comprises lightly doped p-type single crystalline silicon (P−silicon).
Word line 112 passes body region 108 of access transistor 111 in isolation trench 114. Word line 112 is separated from body region 108 of access transistor 111 by gate oxide 116 such that the portion of word line 112 adjacent to body region 108 operates as a gate for access transistor 111. Word line 112 may comprise, for example, N+poly-silicon material that is deposited in isolation trench 114. Cell 102D is coupled in a column with cell 102A by bit line 118.
Memory cell 102D also includes storage capacitor 119 for storing data in the cell. A first plate 110 of capacitor 119 for memory cell 102D is integral with second source/drain region 110 of access transistor 111. Thus, memory cell 102D may be more easily realizable when compared to conventional vertical transistors since there is no need for a contact between second source/drain region 110 and capacitor 119. Surface 117 of second source/drain region 110 comprises a “micro-roughened” surface. This micro-roughened surface is formed by coating second source/drain region 110 with poly-silicon and treating the poly-silicon so as to form pores in surface 117. This increases the surface area of second source/drain region 110 and, thus, increases the capacitance of capacitor 119. The pores in surface 117 can be formed, for example, using the etching techniques described below.
Second plate 120 of capacitor 119 is common to all of the capacitors of array 100. Second plate 120 comprises a mesh or grid of n+poly-silicon formed in deep trenches that surrounds at least a portion of second source/drain region 110 of each pillars 104 in memory cells 102A through 102D. Second plate 120 is grounded by contact with substrate 101 underneath the trenches. Second plate 120 is separated from source/drain region 110 by gate insulator 122.
FIGS. 2, 3, 4 and 5 are cross sectional views that illustrate an embodiment of a method for forming an array of memory cells according to the embodiments of the invention. FIG. 2 is a cross sectional view that shows a portion of an array of memory cells, indicated generally at 200. Array 200 includes pillars of semiconductor material 202 and 204 that are formed either outwardly from a bulk silicon wafer or outwardly from a silicon-on-insulator (SOI) structure. Pillar 202 includes first source/drain region 206, body region 208 and second source/drain region 210. As shown, first source/drain region 206 and second source/drain region 210 comprise heavily doped n-type semiconductor material and body region 208 comprises p-type semiconductor material. Pillar 204 is similarly constructed. Pillars 202 and 204 form the basis for vertical transistors used in array 200. It is noted that the conductivity types of the various regions of the pillars can be swapped so as to allow the formation of p-channel transistors.
The silicon pillar structure of a vertical transistor of array 200 may be formed using, for example, the techniques shown and described with respect to FIGS. 5A-5J of co-pending application Ser. No. 08/944,890, entitled “Circuit and Method for an Open Bit Line Memory Cell with A Vertical Transistor and Trench Plate Trench Capacitor,” filed on Oct. 6, 1997 or with respect to FIGS. 5A-5M of application Ser. No. 08/939,742, entitled “Circuit and Method for a Folded Bit Line Memory Cell with Vertical Transistors and a Trench Capacitor,” filed on Oct. 6, 1997, which applications are incorporated herein by reference. Alternatively, the silicon pillars can be constructed to provide for a body contact for the transistors using techniques described with respect to FIGS. 5A-5P and 6A to 6O of co-pending, commonly assigned application Ser. No. 08/944,312, entitled “Circuit and Method for a Folded Bit Line Memory Using Trench Plate Capacitor Cells With Body Bias Contacts,” filed on Oct. 6, 1997 or with respect to FIGS. 5A-5O of application Ser. No. 08/939,732, entitled “Circuit and Method for an Open Bit Line Memory Cell With A Vertical Transistor and Trench Plate Trench Capacitor,” filed on Oct. 6, 1997, which applications are also incorporated herein by reference. Further, other conventional techniques for forming vertical transistors can also be used.
Once the basic silicon pillar structure is in place, surface 209 of first source/drain region 206 is roughened. Initially, nitride layer 212 (Si3N4) is deposited on silicon pillars 202 and 204. Optionally, nitride pad 213 is also deposited in trench 214 to protect the bottom of trench 214 during subsequent processing steps. For example, nitride pad 213 may be used when an SOI structure is used and the bottom of trench 214 is an insulator such as an oxide.
Trench 214 is filled with an oxide such that the entire structure of array 200 is covered. The oxide material outside of trench 214 is removed by, for example, chemical/mechanical polishing down to nitride layer 212. The oxide is further recessed into trench 214 to form oxide layer 216 as shown. Nitride masking layer 218 (Si3N4) is next deposited to protect body region 208 and second source drain region 210 during the formation of a micro-roughened surface. It is noted that masking layer 218 can be formed of any other material that can withstand a 6% aqueous solution of hydrofluoric acid (HF) or other etchant used to form a micro-roughened surface on first source/drain region 206.
As shown in FIG. 3, nitride mask layer 218 is directionally etched to leave nitride mask layer 218 on selected surfaces of pillars 202 and 204. Oxide layer 216 is removed by, for example, an etching process. Amorphous silicon is deposited in trench 214 to form layer 220 with a thickness on the order of 10 to 40 nanometers (nm). The structure is heated to a sufficient temperature such that impurities diffuse out from first source/drain region 206 into layer 220. Thus, layer 220 becomes polysilicon that is doped to be the same conductivity type as first source/drain region 206. An etch that preferentially attacks intrinsic, undoped polysilicon is used to remove layer 220 from surfaces other than the surface of first source/drain region 206.
Surface 221 of layer 220 is next roughened to provide increased surface area for the trench capacitors of array 200. Surface 221 can be roughened in at least two different ways. First, layer 220 can be etched in a solution containing phosphoric acid (H3PO4). This forms micro-roughened surface 222 on polysilicon layer 220 in trench 214 as shown in FIG. 4.
Alternatively, an anodic etch can be used to form the micro-roughened surface on layer 220. FIG. 5 is a schematic diagram that illustrates an embodiment of a layout of equipment used to carry out the anodic etch. Bottom surface 246 of semiconductor wafer 201 is coupled to voltage source 234 by positive electrode 230. Further, negative electrode 232 is coupled to voltage source 234 and is placed in a bath of 6% aqueous solution of hydrofluoric acid (HF) on surface 245 of semiconductor wafer 201. It is noted that surface 245 includes layer 220 that is to be roughened by the anodic etch.
In this example, illumination equipment 236 is also included because the surface to be roughened is n-type semiconductor material. When p-type semiconductor material is used, the illumination equipment is not required. Illumination equipment 236 assures that there is a sufficient concentration of holes in layer 220 as required by the anodic etching process. Illumination equipment 236 includes lamp 238, IR filter 240, and lens 242. Illumination equipment 236 focuses light on surface 246 of semiconductor wafer 201.
In operation, layer 220 provides a high density of nucleation sites that are used by the anodic etch to roughen the surface of layer 220. Voltage source 234 is turned on and provides a voltage across positive and negative electrodes 230 and 232. Etching current flows from positive electrode 230 to surface 245. This current forms pores in surface 221 of layer 220. Further, illumination equipment illuminates surface 246 of semiconductor wafer 201 so as to assure a sufficient concentration of holes for the anodic etching process. The anodic etching process produces a porous or roughened surface 222 on layer 220 as shown in FIG. 4 such that the effective surface area of first source/drain region 206 is increased.
The size and shape of the pores in layer 220 depends on, for example, the anodization parameters such as HF concentration, current density, and light illumination. The spatial structure of the pores reflects the available paths for the etching current to flow from surface 245 to positive electrode 230. By adjusting the anodic etching parameters, the approximate diameter of the pores can be controlled with typically the smallest pore diameter on the order of 2 nanometers.
Array 200 is completed using, for example, the techniques described in the applications incorporated by reference above.
FIG. 6 is a cross sectional view of another embodiment of a memory cell according to the teachings of the embodiments of the invention. Memory cell 600 includes a conventional lateral transistor 602 with first source/drain region 604, body region 606 and second source/drain region 608. Transistor 602 also includes gate 610 that may be formed as part of a word line in a memory array as is known in the art. Bit line 612 is coupled to first source/drain region 604.
Memory cell 600 also includes trench capacitor 614. Substrate 616 forms a first plate of trench capacitor 614. Surface 618 of substrate 616 in trench 620 is formed with a micro-roughened surface using, for example, one of the techniques described above by depositing and etching a polysilicon layer in trench 620. Trench capacitor 614 also includes dielectric layer 622 that separates surface 618 from second plate 624. Second plate 624 comprises, for example, poly-silicon. Substrate 616 comprises single crystal silicon. A layer of polysilicon material is deposited on a surface of the single crystal silicon of substrate 616 in forming micro-roughened surface 618. Second plate 624 of trench capacitor 614 is coupled to second source/drain region 608 by polysilicon strap 630.
In the example of FIG. 6, transistor 602 comprises an n-channel transistor with heavily doped n-type source/drain regions and a body region formed in lightly doped p-type silicon well. Further, substrate 616 comprises a heavily doped p-type semiconductor substrate. Since substrate 616 comprises p-type material, the anodic etch, without illumination, can be used to form micro-roughened surface 618.
Memory cell 600 is included in an array of similar memory cells to store and retrieve data using conventional techniques.
FIG. 7 is a block diagram of an illustrative embodiment of the invention. This embodiment includes memory device 700 that is coupled to electronic system 702 by control lines 704, address lines 706 and input/output (I/O) lines 708. Electronic system 702 comprises, for example, a microprocessor, a processor based computer, microcontroller, memory controller, a chip set or other appropriate system for reading and writing data in a memory device. Memory device 700 includes array of memory cells 710 that is coupled to word line decoder 714 and sense amplifier 711. Array of memory cells 710 is constructed with memory cells that include trench capacitors with a micro-roughened surface that is formed using, for example, one of the techniques described above.
Word line decoder 714 includes word line drivers that are coupled to word lines of array 710. Sense amplifier 711 is coupled to bit line decoder 712. Bit line decoder 712 and word line decoder 714 are coupled to address lines 706. Bit line decoder 712 is coupled to I/O circuit 716. I/O circuit 716 is coupled to I/O lines 708. Control circuit 718 is coupled to control lines 704, sense amplifier 711, word line decoder 714, bit line decoder 712, and I/O circuit 716.
In operation, electronic system 702 provides signals on address lines 706 and control lines 704 when data is to be read from or written to a cell of array 710. Word line decoder 714 determines the word line of a selected cell of array 710 using the address provided on address lines 706. Further, bit line decoder 712 determines the bit line of the selected cell of array 710. In a read operation, sense amplifier 711 detects the value stored in the selected cell based on bit lines of array 710. Sense amplifier 711 provides this voltage to I/O circuit 716 which, in turn, passes data to electronic system 702 over I/O lines 708. In a write operation, I/O circuit 716 passes data from I/O lines 708 to sense amplifier 711 for storage in the selected cell of array 710.
CONCLUSION
Some embodiments of the invention include a trench capacitor with increased surface area is described which is formed by depositing a layer of polysilicon in a trench in a semiconductor substrate and etching the polysilicon to produce a porous surface for the trench capacitor.
In an embodiments, a method for forming a trench capacitor is described. The method includes forming a trench in a semiconductor substrate. A conformal layer of semiconductor material is deposited in the trench. The surface of the conformal layer of semiconductor material is roughened. An insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material. A polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench.
In another embodiment, a method for forming a memory cell with a trench capacitor is provided. The method includes forming a transistor including first and second source/drain regions, a body region and a gate in a layer of semiconductor material on a substrate. Further, a trench is formed in the layer of semiconductor material and a conformal layer of semiconductor material is formed in the trench. The surface of the conformal layer of semiconductor material is roughened and an insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material. A polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench such that the polycrystalline semiconductor plate forms one of the plates of the trench capacitor. The trench capacitor is coupled to one of the first source/drain regions of the transistor.
In another embodiment, a memory cell is provided. The memory cell includes a lateral transistor formed in a layer of semiconductor material outwardly from a substrate. The transistor includes a first source/drain region, a body region and a second source/drain region. A trench capacitor is formed in a trench and coupled to the first source/drain region. The trench capacitor includes a polycrystalline semiconductor plate formed in the trench that is coupled to the first source/drain region. The trench capacitor also includes a second plate formed by the substrate with a surface of the substrate in the trench roughened by etching a polycrystalline semiconductor material on the surface of the substrate. The trench capacitor also includes an insulator layer that separates the polycrystalline semiconductor plate from the roughened surface of the substrate.
In another embodiment, a memory cell is provided. The memory cell includes a vertical transistor that is formed outwardly from a substrate. The transistor includes a first source/drain region, a body region and a second source/drain region that are vertically aligned. A surface of the first source/drain region is roughened by etching a polycrystalline semiconductor material on a surface of the first source/drain region. A trench capacitor is also included. The trench capacitor includes a plate that is formed in a trench that surrounds the roughened surface of the first source/drain region of the transistor.
In another embodiment, a memory device is provided. The memory device includes an array of memory cells. Each memory cell includes an access transistor that is coupled to a trench capacitor. A first plate of the trench capacitor includes a micro-roughened surface of porous polysilicon. A second plate of the trench capacitor is disposed adjacent to the first plate. A number of bit lines are each selectively coupled to a number of the memory cells at a first source/drain region of the access transistor. A number of word lines are disposed substantially orthogonal to the bit lines and are coupled to gates of a number of access transistors. A row decoder is coupled to the word lines and a column decoder is coupled to the bit lines so as to selectively access the cells of the array.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement which is calculated to achieve the same purpose may be substituted for the specific embodiment shown. This application is intended to cover any adaptations or variations of the embodiments of the invention. For example, the techniques for forming roughened surfaces can be applied to p-type vertical transistors. In this case, when an anodic etch is used, no light source is needed to create the roughened texture on the surface of the p-type semiconductor material. Semiconductor materials other than silicon can be used. Further, the conductivity type of the semiconductor material can be altered without departing from the teachings of the embodiments of the invention.

Claims (22)

1. A memory device comprising:
a plurality of memory cells, each of the plurality of memory cells, including,
a vertical transistor including a first source/drain region, a body region, and a second source/drain region, wherein an entire of the first source/drain region, an entire of the body region, and an entire of the second source/drain region form a pillar and are vertically aligned in the pillar;
a trench capacitor having a first capacitor plate coupled to the second source/drain region without an intervening conductor, and a second capacitor plate formed in a trench, the first capacitor plate having an etch-roughened surface, the second capacitor plate surrounding at least a portion of the first capacitor plate; and
an insulator separating the second capacitor plate from the etch-roughened surface of the first capacitor plate, wherein the vertical transistor further includes a gate directly above the second capacitor plate and adjacent to the body region.
2. The memory device of claim 1, wherein the second capacitor plate includes polysilicon.
3. The memory device of claim 1, wherein the first capacitor plate includes n-type silicon.
4. The memory device of claim 1, wherein the first capacitor plate includes a single crystalline layer.
5. The memory device of claim 1, wherein the second source/drain region includes a P-doped material.
6. The memory device of claim 1, wherein the second source/drain region includes an N-doped material.
7. A memory device of claim 1, wherein the etch-roughened surface of the first capacitor plate comprises a layer of polysilicon.
8. The memory device of claim 1, wherein the second capacitor plate is coupled to ground.
9. The memory device of claim 1, wherein none of the first source/drain regions of the plurality of memory cells is shared between two transistors of the plurality of memory cells.
10. A memory device comprising:
a plurality of memory cells, each of the memory cells including a vertical transistor and a trench capacitor, the vertical transistor including a body region, a first source/drain region, and a second source/drain region, the trench capacitor including a first capacitor plate coupled to the second source/drain region without an intervening conductor, and a second capacitor plate formed in a trench and surrounding the first capacitor plate, the first capacitor plate including a micro-roughened surface, wherein an entire of the first source/drain region, an entire of the body region, and an entire of the second source/drain region form a pillar and are vertically aligned in the pillar;
a plurality of word lines for activating the vertical transistor of each of the memory cells, each of the word lines being formed directly above a top surface of the second capacitor plate; and
a plurality of bit lines, each of the bit lines is coupled to a selected number of the memory cells at the first source/drain region of the vertical access transistor of each of the selected number of the memory cells.
11. The memory device of claim 10, wherein the first capacitor plate comprises heavily doped n-type silicon.
12. The memory device of claim 10, wherein the second source/drain region includes one of P-doped material and N-doped material.
13. The memory device of claim 10, wherein the first capacitor plate includes n-type silicon.
14. The memory device of claim 10, wherein the second source/drain region includes one of P-doped material and N-doped material.
15. A system comprising:
a processor; and
a memory device coupled to the processor, the memory device including a plurality of memory cells, each of the plurality of memory cells including,
a vertical transistor including a first source/drain region, a body region, and a second source/drain region, wherein an entire of the first source/drain region, an entire of the body region, and an entire of the second source/drain region form a pillar and are vertically aligned in the pillar;
a trench capacitor having a first capacitor plate coupled to the second source/drain region without an intervening conductor, and a second capacitor plate formed in a trench, the first capacitor plate having an etch-roughened surface, the second capacitor plate surrounding at least a portion of the first capacitor plate; and
an insulator separating the second capacitor plate from the etch-roughened surface of the first capacitor plate, wherein the vertical transistor further includes a gate directly above the second capacitor plate and adjacent to the body region.
16. The system of claim 15, wherein the memory device further includes a word line decoder to the memory array.
17. The system of claim 15, wherein the memory device further includes a bit line decoder to the memory array.
18. A method comprising:
determining an address of a selected memory cell among a plurality of memory cells; and
accessing the selected memory cell based on the determining of the word line and the determining of the bit line, wherein each of the memory cells including,
a vertical transistor including a first source/drain region, a body region, and a second source/drain region, wherein an entire of the first source/drain region, an entire of the body region, and an entire of the second source/drain region form a pillar and are vertically aligned in the pillar;
a trench capacitor having a first capacitor plate coupled to the second source/drain region without an intervening conductor, and a second capacitor plate formed in a trench, the first capacitor plate having an etch-roughened surface, the second capacitor plate surrounding at least a portion of the first capacitor plate; and
an insulator separating the second capacitor plate from the etch-roughened surface of the first capacitor plate, wherein the vertical transistor further includes a gate directly above the second capacitor plate and adjacent to the body region.
19. The method of claim 18, wherein determining the address of the selected memory cell includes determining a world line of the selected memory cell.
20. The method of claim 19, wherein determining the address of the selected memory cell includes determining a bit line of the selected memory cell.
21. The method of claim 18, wherein accessing the selected memory cell includes passing data of the selected memory cell to an electronic system.
22. The method of claim 18, wherein accessing the selected memory cell includes passing data from an electronic system to the selected memory cell.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110221003A1 (en) * 2010-03-09 2011-09-15 International Business Machines Corporation MOSFETs WITH REDUCED CONTACT RESISTANCE
US20120313157A1 (en) * 2011-06-08 2012-12-13 Inotera Memories, Inc. Dram cell having buried bit line and manufacturing method thereof
TWI713973B (en) * 2019-01-15 2020-12-21 力晶積成電子製造股份有限公司 Memory structure

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191470B1 (en) 1997-07-08 2001-02-20 Micron Technology, Inc. Semiconductor-on-insulator memory cell with buried word and body lines
US5907170A (en) 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6066869A (en) * 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
US6528837B2 (en) * 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6025225A (en) * 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US6304483B1 (en) 1998-02-24 2001-10-16 Micron Technology, Inc. Circuits and methods for a static random access memory using vertical transistors
US6448615B1 (en) 1998-02-26 2002-09-10 Micron Technology, Inc. Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
US5991225A (en) 1998-02-27 1999-11-23 Micron Technology, Inc. Programmable memory address decode array with vertical transistors
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US6307235B1 (en) * 1998-03-30 2001-10-23 Micron Technology, Inc. Another technique for gated lateral bipolar transistors
US6104066A (en) 1998-03-30 2000-08-15 Micron Technology, Inc. Circuit and method for low voltage, voltage sense amplifier
US6043527A (en) 1998-04-14 2000-03-28 Micron Technology, Inc. Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device
JPH11354631A (en) 1998-06-11 1999-12-24 Nec Kansai Ltd Semiconductor device
US6208164B1 (en) 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
US6232171B1 (en) * 1999-01-11 2001-05-15 Promos Technology, Inc. Technique of bottle-shaped deep trench formation
KR100324594B1 (en) 1999-06-28 2002-02-16 박종섭 FeRAM Device
KR100296917B1 (en) 1999-06-28 2001-07-12 박종섭 Apparatus for generating reference voltage in ferroelectric memory device
US6380575B1 (en) * 1999-08-31 2002-04-30 International Business Machines Corporation DRAM trench cell
TW429514B (en) * 1999-10-06 2001-04-11 Mosel Vitelic Inc Planarization method for polysilicon layer deposited on the trench
US6121084A (en) * 2000-01-27 2000-09-19 Micron Technology, Inc. Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors
US6346455B1 (en) 2000-08-31 2002-02-12 Micron Technology, Inc. Method to form a corrugated structure for enhanced capacitance
DE10055711B4 (en) * 2000-11-10 2008-04-30 Qimonda Ag Method of making trench capacitors
US6555430B1 (en) * 2000-11-28 2003-04-29 International Business Machines Corporation Process flow for capacitance enhancement in a DRAM trench
DE10100582A1 (en) * 2001-01-09 2002-07-18 Infineon Technologies Ag Process for the production of trench capacitors for integrated semiconductor memories
US8026161B2 (en) * 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US7068544B2 (en) * 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
EP1306894A1 (en) * 2001-10-19 2003-05-02 Infineon Technologies AG A method of forming a silicon dioxide layer on a curved Si surface
US6613642B2 (en) 2001-12-13 2003-09-02 International Business Machines Corporation Method for surface roughness enhancement in semiconductor capacitor manufacturing
WO2003060994A1 (en) * 2002-01-21 2003-07-24 Infineon Technologies Ag Memory chip with low-temperature layers in the trench capacitor
US6706591B1 (en) 2002-01-22 2004-03-16 Taiwan Semiconductor Manufacturing Company Method of forming a stacked capacitor structure with increased surface area for a DRAM device
US6821864B2 (en) * 2002-03-07 2004-11-23 International Business Machines Corporation Method to achieve increased trench depth, independent of CD as defined by lithography
US7589029B2 (en) * 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
DE10227492B4 (en) * 2002-06-19 2006-03-09 Infineon Technologies Ag Method for producing a deep trench capacitor for dynamic memory cells
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6790791B2 (en) * 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US20040036131A1 (en) * 2002-08-23 2004-02-26 Micron Technology, Inc. Electrostatic discharge protection devices having transistors with textured surfaces
US6709947B1 (en) 2002-12-06 2004-03-23 International Business Machines Corporation Method of area enhancement in capacitor plates
US7135369B2 (en) * 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
US7067385B2 (en) * 2003-09-04 2006-06-27 Micron Technology, Inc. Support for vertically oriented capacitors during the formation of a semiconductor device
US7387939B2 (en) 2004-07-19 2008-06-17 Micron Technology, Inc. Methods of forming semiconductor structures and capacitor devices
CN101044649A (en) * 2004-08-19 2007-09-26 通用汽车环球科技运作公司 Method of treating composite plates
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7439152B2 (en) * 2004-08-27 2008-10-21 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7202127B2 (en) * 2004-08-27 2007-04-10 Micron Technology, Inc. Methods of forming a plurality of capacitors
US20060046055A1 (en) * 2004-08-30 2006-03-02 Nan Ya Plastics Corporation Superfine fiber containing grey dope dyed component and the fabric made of the same
US7494939B2 (en) * 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
WO2006056959A1 (en) * 2004-11-26 2006-06-01 Koninklijke Philips Electronics N.V. Method of modifying surface area and electronic device
US7320911B2 (en) * 2004-12-06 2008-01-22 Micron Technology, Inc. Methods of forming pluralities of capacitors
US20060125030A1 (en) * 2004-12-13 2006-06-15 Micron Technology, Inc. Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics
US20060125121A1 (en) * 2004-12-15 2006-06-15 Chih-Hsin Ko Capacitor-less 1T-DRAM cell with Schottky source and drain
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7374964B2 (en) * 2005-02-10 2008-05-20 Micron Technology, Inc. Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
US7557015B2 (en) 2005-03-18 2009-07-07 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7662729B2 (en) * 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7638385B2 (en) * 2005-05-02 2009-12-29 Semiconductor Components Industries, Llc Method of forming a semiconductor device and structure therefor
EP1722466A1 (en) * 2005-05-13 2006-11-15 STMicroelectronics S.r.l. Method and relative circuit for generating a control voltage of a synchronous rectifier
US7544563B2 (en) 2005-05-18 2009-06-09 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7517753B2 (en) * 2005-05-18 2009-04-14 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7199005B2 (en) * 2005-08-02 2007-04-03 Micron Technology, Inc. Methods of forming pluralities of capacitors
US8071476B2 (en) 2005-08-31 2011-12-06 Micron Technology, Inc. Cobalt titanium oxide dielectric films
US7410910B2 (en) * 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
US7709402B2 (en) * 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7557013B2 (en) * 2006-04-10 2009-07-07 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7902081B2 (en) 2006-10-11 2011-03-08 Micron Technology, Inc. Methods of etching polysilicon and methods of forming pluralities of capacitors
US7785962B2 (en) 2007-02-26 2010-08-31 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US7759237B2 (en) 2007-06-28 2010-07-20 Micron Technology, Inc. Method of forming lutetium and lanthanum dielectric structures
US7682924B2 (en) 2007-08-13 2010-03-23 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7906405B2 (en) * 2007-12-24 2011-03-15 Texas Instruments Incorporated Polysilicon structures resistant to laser anneal lightpipe waveguide effects
US8388851B2 (en) 2008-01-08 2013-03-05 Micron Technology, Inc. Capacitor forming methods
US8394683B2 (en) 2008-01-15 2013-03-12 Micron Technology, Inc. Methods of forming semiconductor constructions, and methods of forming NAND unit cells
US7994536B2 (en) * 2008-02-19 2011-08-09 Qimonda Ag Integrated circuit including U-shaped access device
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
US7759193B2 (en) 2008-07-09 2010-07-20 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8541058B2 (en) * 2009-03-06 2013-09-24 Timothy S. Fisher Palladium thiolate bonding of carbon nanotubes
US8021945B2 (en) * 2009-04-14 2011-09-20 International Business Machines Corporation Bottle-shaped trench capacitor with enhanced capacitance
US20110045351A1 (en) * 2009-08-23 2011-02-24 Ramot At Tel-Aviv University Ltd. High-Power Nanoscale Cathodes for Thin-Film Microbatteries
WO2011154862A1 (en) * 2010-06-06 2011-12-15 Ramot At Tel-Aviv University Ltd Three-dimensional microbattery having a porous silicon anode
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8227311B2 (en) 2010-10-07 2012-07-24 International Business Machines Corporation Method of forming enhanced capacitance trench capacitor
TW201222778A (en) * 2010-11-18 2012-06-01 Ind Tech Res Inst Trench capacitor structures and method of manufacturing the same
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
FR2990757B1 (en) * 2012-05-15 2014-10-31 Commissariat Energie Atomique CAPACITIVE CAPACITOR WITH POROUS MATERIAL HAVING AN IMPROVED ARRANGEMENT
US8652926B1 (en) 2012-07-26 2014-02-18 Micron Technology, Inc. Methods of forming capacitors
TW201532327A (en) * 2013-11-19 2015-08-16 Univ Rice William M Porous SiOx materials for improvement in SiOx switching device performances
US9831424B2 (en) 2014-07-25 2017-11-28 William Marsh Rice University Nanoporous metal-oxide memory
WO2017055984A1 (en) 2015-09-30 2017-04-06 Ramot At Tel Aviv University Ltd. 3d micro-battery on 3d-printed substrate
US20170186837A1 (en) 2015-12-29 2017-06-29 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench capacitor with scallop profile
WO2018236357A1 (en) * 2017-06-20 2018-12-27 Intel Corporation Thin film transistors having relatively increased width
WO2019066829A1 (en) * 2017-09-28 2019-04-04 Intel Corporation Direct self-assembly process for formation of selector or memory layers on a vertical rram memory for leakage current minimization
US11233288B2 (en) * 2018-07-11 2022-01-25 International Business Machines Corporation Silicon substrate containing integrated porous silicon electrodes for energy storage devices
JP7396947B2 (en) * 2020-03-27 2023-12-12 ラピスセミコンダクタ株式会社 Semiconductor device and semiconductor device manufacturing method
US11721801B2 (en) * 2020-08-17 2023-08-08 International Business Machines Corporation, Armonk Low resistance composite silicon-based electrode
US11923355B2 (en) * 2021-08-30 2024-03-05 Taiwan Semiconductor Manufacturing Company Limited Deep trench capacitor fuse structure for high voltage breakdown defense and methods for forming the same

Citations (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657575A (en) 1970-03-13 1972-04-18 Hitachi Ltd Threshold voltage compensating circuits for fets
US3806741A (en) 1972-05-17 1974-04-23 Standard Microsyst Smc Self-biasing technique for mos substrate voltage
US3931617A (en) 1974-10-07 1976-01-06 Signetics Corporation Collector-up dynamic memory cell
US4020364A (en) 1974-09-28 1977-04-26 U.S. Philips Corporation Resistance read amplifier
US4051354A (en) 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4252579A (en) 1979-05-07 1981-02-24 International Business Machines Corporation Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
US4313106A (en) 1980-06-30 1982-01-26 Rca Corporation Electrically programmable logic array
US4402044A (en) * 1980-11-24 1983-08-30 Texas Instruments Incorporated Microprocessor with strip layout of busses, ALU and registers
US4570176A (en) 1984-04-16 1986-02-11 At&T Bell Laboratories CMOS Cell array with transistor isolation
US4604162A (en) 1983-06-13 1986-08-05 Ncr Corporation Formation and planarization of silicon-on-insulator structures
US4617649A (en) 1981-11-17 1986-10-14 Ricoh Company, Ltd. Erasable FPLA
US4630088A (en) 1984-09-11 1986-12-16 Kabushiki Kaisha Toshiba MOS dynamic ram
US4663831A (en) 1985-10-08 1987-05-12 Motorola, Inc. Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers
US4673962A (en) 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
US4677589A (en) 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
US4701423A (en) 1985-12-20 1987-10-20 Ncr Corporation Totally self-aligned CMOS process
US4716314A (en) 1974-10-09 1987-12-29 U.S. Philips Corporation Integrated circuit
US4740826A (en) 1985-09-25 1988-04-26 Texas Instruments Incorporated Vertical inverter
US4761385A (en) 1987-02-10 1988-08-02 Motorola, Inc. Forming a trench capacitor
US4761768A (en) 1985-03-04 1988-08-02 Lattice Semiconductor Corporation Programmable logic device
US4766569A (en) 1985-03-04 1988-08-23 Lattice Semiconductor Corporation Programmable logic array
US4845537A (en) 1986-12-01 1989-07-04 Mitsubishi Denki Kabushiki Kaisha Vertical type MOS transistor and method of formation thereof
US4888735A (en) 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
US4906590A (en) 1988-05-09 1990-03-06 Mitsubishi Denki Kabushiki Kaisha Method of forming a trench capacitor on a semiconductor substrate
US4920065A (en) 1988-10-31 1990-04-24 International Business Machines Corporation Method of making ultra dense dram cells
US4920515A (en) 1987-10-23 1990-04-24 Ricoh Company, Ltd. Programmable logic array having an improved testing arrangement
US4920389A (en) 1988-03-08 1990-04-24 Oki Electric Industry Co., Ltd. Memory call array structure and process for producing the same
US4929988A (en) 1987-08-25 1990-05-29 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of the manufacture thereof
US4949138A (en) 1987-10-27 1990-08-14 Texas Instruments Incorporated Semiconductor integrated circuit device
US4958318A (en) 1988-07-08 1990-09-18 Eliyahou Harari Sidewall capacitor DRAM cell
US4965651A (en) 1973-02-01 1990-10-23 U.S. Philips Corporation CMOS logic array layout
US4987089A (en) 1990-07-23 1991-01-22 Micron Technology, Inc. BiCMOS process and process for forming bipolar transistors on wafers also containing FETs
US5001526A (en) 1987-11-10 1991-03-19 Fujitsu Limited Dram cell formed on an insulating layer having a buried semiconductor pillar structure and a manufacturing method thereof
US5006909A (en) 1989-10-30 1991-04-09 Motorola, Inc. Dram with a vertical capacitor and transistor
US5010386A (en) 1989-12-26 1991-04-23 Texas Instruments Incorporated Insulator separated vertical CMOS
US5017504A (en) 1986-12-01 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Vertical type MOS transistor and method of formation thereof
US5021355A (en) 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor
US5028977A (en) 1989-06-16 1991-07-02 Massachusetts Institute Of Technology Merged bipolar and insulated gate transistors
US5057896A (en) 1988-05-28 1991-10-15 Fujitsu Limited Semiconductor device and method of producing same
US5072269A (en) 1988-03-15 1991-12-10 Kabushiki Kaisha Toshiba Dynamic ram and method of manufacturing the same
US5083047A (en) 1989-10-26 1992-01-21 Kabushiki Kaisha Toshiba Precharged-type logic circuit having dummy precharge line
US5087581A (en) 1990-10-31 1992-02-11 Texas Instruments Incorporated Method of forming vertical FET device with low gate to source overlap capacitance
US5102817A (en) 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5107459A (en) 1990-04-20 1992-04-21 International Business Machines Corporation Stacked bit-line architecture for high density cross-point memory cell array
US5110752A (en) 1991-07-10 1992-05-05 Industrial Technology Research Institute Roughened polysilicon surface capacitor electrode plate for high denity dram
US5128831A (en) 1991-10-31 1992-07-07 Micron Technology, Inc. High-density electronic package comprising stacked sub-modules which are electrically interconnected by solder-filled vias
US5140388A (en) 1991-03-22 1992-08-18 Hewlett-Packard Company Vertical metal-oxide semiconductor devices
US5156987A (en) 1991-12-18 1992-10-20 Micron Technology, Inc. High performance thin film transistor (TFT) by solid phase epitaxial regrowth
US5177028A (en) 1991-10-22 1993-01-05 Micron Technology, Inc. Trench isolation method having a double polysilicon gate formed on mesas
US5177576A (en) 1990-05-09 1993-01-05 Hitachi, Ltd. Dynamic random access memory having trench capacitors and vertical transistors
US5181089A (en) 1989-08-15 1993-01-19 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and a method for producing the same
US5191509A (en) 1991-12-11 1993-03-02 International Business Machines Corporation Textured polysilicon stacked trench capacitor
US5202278A (en) 1991-09-10 1993-04-13 Micron Technology, Inc. Method of forming a capacitor in semiconductor wafer processing
US5208657A (en) 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5216266A (en) 1990-04-11 1993-06-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having memory cells formed in trench and manufacturing method therefor
US5220530A (en) 1990-08-07 1993-06-15 Oki Electric Industry Co., Ltd. Semiconductor memory element and method of fabricating the same
US5221867A (en) 1991-10-11 1993-06-22 Intel Corporation Programmable logic array with internally generated precharge and evaluation timing
US5223081A (en) 1991-07-03 1993-06-29 Doan Trung T Method for roughening a silicon or polysilicon surface for a semiconductor substrate
US5266514A (en) * 1992-12-21 1993-11-30 Industrial Technology Research Institute Method for producing a roughened surface capacitor
US5276343A (en) 1990-04-21 1994-01-04 Kabushiki Kaisha Toshiba Semiconductor memory device having a bit line constituted by a semiconductor layer
US5292676A (en) 1992-07-29 1994-03-08 Micron Semiconductor, Inc. Self-aligned low resistance buried contact process
US5308782A (en) 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
US5316962A (en) 1989-08-15 1994-05-31 Matsushita Electric Industrial Co., Ltd. Method of producing a semiconductor device having trench capacitors and vertical switching transistors
US5320880A (en) 1992-10-20 1994-06-14 Micron Technology, Inc. Method of providing a silicon film having a roughened outer surface
US5327380A (en) 1988-10-31 1994-07-05 Texas Instruments Incorporated Method and apparatus for inhibiting a predecoder when selecting a redundant row line
US5329481A (en) 1991-12-16 1994-07-12 U.S. Philips Corporation Semiconductor device having a memory cell
US5341331A (en) 1991-07-31 1994-08-23 Samsung Electronics, Co., Ltd. Data transmission circuit having common input/output lines
US5363325A (en) 1991-07-01 1994-11-08 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device having high integration density
US5365477A (en) 1992-06-16 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Dynamic random access memory device
US5376575A (en) 1991-09-26 1994-12-27 Hyundai Electronics Industries, Inc. Method of making dynamic random access memory having a vertical transistor
US5378914A (en) 1990-05-31 1995-01-03 Canon Kabushiki Kaisha Semiconductor device with a particular source/drain and gate structure
US5379255A (en) 1992-12-14 1995-01-03 Texas Instruments Incorporated Three dimensional famos memory devices and methods of fabricating
US5382540A (en) 1993-09-20 1995-01-17 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
US5385853A (en) 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
US5385854A (en) 1993-07-15 1995-01-31 Micron Semiconductor, Inc. Method of forming a self-aligned low density drain inverted thin film transistor
US5392245A (en) 1993-08-13 1995-02-21 Micron Technology, Inc. Redundancy elements using thin film transistors (TFTs)
US5391911A (en) 1993-03-29 1995-02-21 International Business Machines Corporation Reach-through isolation silicon-on-insulator device
US5393704A (en) 1993-12-13 1995-02-28 United Microelectronics Corporation Self-aligned trenched contact (satc) process
US5396452A (en) 1993-07-02 1995-03-07 Wahlstrom; Sven E. Dynamic random access memory
US5396093A (en) 1994-02-14 1995-03-07 Industrial Technology Research Institute Vertical DRAM cross point memory cell and fabrication method
US5402012A (en) 1993-04-19 1995-03-28 Vlsi Technology, Inc. Sequentially clocked domino-logic cells
US5410169A (en) 1990-02-26 1995-04-25 Kabushiki Kaisha Toshiba Dynamic random access memory having bit lines buried in semiconductor substrate
US5409563A (en) 1993-02-26 1995-04-25 Micron Technology, Inc. Method for etching high aspect ratio features
US5414288A (en) 1992-11-19 1995-05-09 Motorola, Inc. Vertical transistor having an underlying gate electrode contact
US5414287A (en) 1994-04-25 1995-05-09 United Microelectronics Corporation Process for high density split-gate memory cell for flash or EPROM
US5416350A (en) 1993-03-15 1995-05-16 Kabushiki Kaisha Toshiba Semiconductor device with vertical transistors connected in series between bit lines
US5416736A (en) 1992-07-28 1995-05-16 Motorola, Inc. Vertical field-effect transistor and a semiconductor memory cell having the transistor
US5422499A (en) 1993-02-22 1995-06-06 Micron Semiconductor, Inc. Sixteen megabit static random access memory (SRAM) cell
US5422296A (en) 1994-04-25 1995-06-06 Motorola, Inc. Process for forming a static-random-access memory cell
US5427972A (en) 1987-02-13 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Method of making a sidewall contact
US5429955A (en) 1992-10-26 1995-07-04 Texas Instruments Incorporated Method for constructing semiconductor-on-insulator
US5432739A (en) 1994-06-17 1995-07-11 Philips Electronics North America Corporation Non-volatile sidewall memory cell method of fabricating same
US5438009A (en) 1993-04-02 1995-08-01 United Microelectronics Corporation Method of fabrication of MOSFET device with buried bit line
US5440158A (en) 1994-07-05 1995-08-08 Taiwan Semiconductor Manufacturing Company Ltd. Electrically programmable memory device with improved dual floating gates
US5443992A (en) 1993-12-01 1995-08-22 Siemens Aktiengesellschaft Method for manufacturing an integrated circuit having at least one MOS transistor
US5445986A (en) 1993-09-03 1995-08-29 Nec Corporation Method of forming a roughened surface capacitor with two etching steps
US5451889A (en) 1994-03-14 1995-09-19 Motorola, Inc. CMOS output driver which can tolerate an output voltage greater than the supply voltage without latchup or increased leakage current
US5451538A (en) 1992-03-02 1995-09-19 Motorola, Inc. Method for forming a vertically integrated dynamic memory cell
US5460988A (en) 1994-04-25 1995-10-24 United Microelectronics Corporation Process for high density flash EPROM cell
US5460316A (en) 1993-09-15 1995-10-24 At&T Global Information Solutions Company Stencils having enhanced wear-resistance and methods of manufacturing the same
US5466625A (en) 1992-06-17 1995-11-14 International Business Machines Corporation Method of making a high-density DRAM structure on SOI
US5731609A (en) * 1992-03-19 1998-03-24 Kabushiki Kaisha Toshiba MOS random access memory having array of trench type one-capacitor/one-transistor memory cells

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210869A (en) * 1988-06-29 1990-01-16 Hitachi Ltd Semiconductor device
JP3224215B2 (en) * 1992-03-25 2001-10-29 株式会社半導体エネルギー研究所 Method for manufacturing thin-film insulated gate semiconductor device
JP3173854B2 (en) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 Method for manufacturing thin-film insulated gate semiconductor device and semiconductor device manufactured
US5616934A (en) * 1993-05-12 1997-04-01 Micron Technology, Inc. Fully planarized thin film transistor (TFT) and process to fabricate same
JPH07130871A (en) * 1993-06-28 1995-05-19 Toshiba Corp Semiconductor memory device
KR0141218B1 (en) 1993-11-24 1998-07-15 윤종용 Fabrication method of semkonductor device
US5492853A (en) * 1994-03-11 1996-02-20 Micron Semiconductor, Inc. Method of forming a contact using a trench and an insulation layer during the formation of a semiconductor device
KR960016773B1 (en) * 1994-03-28 1996-12-20 Samsung Electronics Co Ltd Buried bit line and cylindrical gate cell and forming method thereof
JP3282915B2 (en) 1994-03-31 2002-05-20 富士通株式会社 DC / DC converter and method of controlling back gate voltage of NMOS transistor
US5495441A (en) * 1994-05-18 1996-02-27 United Microelectronics Corporation Split-gate flash memory cell
JP3745392B2 (en) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ Semiconductor device
US5502357A (en) * 1994-10-03 1996-03-26 Durel Corporation Low cost inverter for EL lamp
US5705415A (en) 1994-10-04 1998-01-06 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
US5593912A (en) * 1994-10-06 1997-01-14 International Business Machines Corporation SOI trench DRAM cell for 256 MB DRAM and beyond
US5508542A (en) * 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
JP3549602B2 (en) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ Semiconductor storage device
US5753947A (en) * 1995-01-20 1998-05-19 Micron Technology, Inc. Very high-density DRAM cell structure and method for fabricating it
US5497017A (en) * 1995-01-26 1996-03-05 Micron Technology, Inc. Dynamic random access memory array having a cross-point layout, tungsten digit lines buried in the substrate, and vertical access transistors
JPH08274612A (en) 1995-03-31 1996-10-18 Nec Corp Semiconductor device
US5641691A (en) 1995-04-03 1997-06-24 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire
US5528173A (en) 1995-05-10 1996-06-18 Micron Technology, Inc. Low power, high speed level shifter
KR0165398B1 (en) * 1995-05-26 1998-12-15 윤종용 Vertical transistor manufacturing method
US5508219A (en) * 1995-06-05 1996-04-16 International Business Machines Corporation SOI DRAM with field-shield isolation and body contact
US5641545A (en) * 1995-06-07 1997-06-24 Micron Technology, Inc. Method to deposit highly conformal CVD films
US5627097A (en) * 1995-07-03 1997-05-06 Motorola, Inc. Method for making CMOS device having reduced parasitic capacitance
JP2937817B2 (en) * 1995-08-01 1999-08-23 松下電子工業株式会社 Method of forming oxide film on semiconductor substrate surface and method of manufacturing MOS semiconductor device
US5879971A (en) 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US5640342A (en) * 1995-11-20 1997-06-17 Micron Technology, Inc. Structure for cross coupled thin film transistors and static random access memory cell
US5801413A (en) * 1995-12-19 1998-09-01 Micron Technology, Inc. Container-shaped bottom electrode for integrated circuit capacitor with partially rugged surface
US5640350A (en) 1996-05-01 1997-06-17 Iga; Adam Sempa Multi-bit dynamic random access memory cell storage
US5760434A (en) * 1996-05-07 1998-06-02 Micron Technology, Inc. Increased interior volume for integrated memory cell
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
US5691230A (en) * 1996-09-04 1997-11-25 Micron Technology, Inc. Technique for producing small islands of silicon on insulator
US5821796A (en) 1996-09-23 1998-10-13 Texas Instruments Incorporated Circuitry for providing a high impedance state when powering down a single port node
US5874760A (en) 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
US5990509A (en) 1997-01-22 1999-11-23 International Business Machines Corporation 2F-square memory cell for gigabit memory applications
US5852375A (en) 1997-02-07 1998-12-22 Silicon Systems Research Limited 5v tolerant I/O circuit
US6016268A (en) 1997-02-18 2000-01-18 Richard Mann Three transistor multi-state dynamic memory cell for embedded CMOS logic applications
US5877061A (en) * 1997-02-25 1999-03-02 International Business Machines Corporation Methods for roughening and volume expansion of trench sidewalls to form high capacitance trench cell for high density dram applications
US5933717A (en) 1997-03-04 1999-08-03 Advanced Micro Devices, Inc. Vertical transistor interconnect structure and fabrication method thereof
US5864158A (en) * 1997-04-04 1999-01-26 Advanced Micro Devices, Inc. Trench-gated vertical CMOS device
US6040716A (en) * 1997-05-19 2000-03-21 Texas Instruments Incorporated Domino logic circuits, systems, and methods with precharge control based on completion of evaluation by the subsequent domino logic stage
US5981995A (en) 1997-06-13 1999-11-09 Advanced Micro Devices, Inc. Static random access memory cell having buried sidewall transistors, buried bit lines, and buried vdd and vss nodes
US5909618A (en) * 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US5936274A (en) 1997-07-08 1999-08-10 Micron Technology, Inc. High density flash memory
US5973356A (en) * 1997-07-08 1999-10-26 Micron Technology, Inc. Ultra high density flash memory
US6150687A (en) 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
EP0899790A3 (en) * 1997-08-27 2006-02-08 Infineon Technologies AG DRAM cell array and method of producing the same
US5907170A (en) * 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6528837B2 (en) * 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6066869A (en) * 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
US6255708B1 (en) * 1997-10-10 2001-07-03 Rengarajan Sudharsanan Semiconductor P-I-N detector
US5872032A (en) 1997-11-03 1999-02-16 Vanguard International Semiconductor Corporation Fabrication method for a DRAM cell with bipolar charge amplification
US6181196B1 (en) * 1997-12-18 2001-01-30 Texas Instruments Incorporated Accurate bandgap circuit for a CMOS process without NPN devices
US6025225A (en) * 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US6246083B1 (en) * 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
US6043527A (en) * 1998-04-14 2000-03-28 Micron Technology, Inc. Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device
US6026019A (en) 1998-06-19 2000-02-15 International Business Machines Corporation Two square NVRAM cell
US6208164B1 (en) * 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
US6181121B1 (en) * 1999-03-04 2001-01-30 Cypress Semiconductor Corp. Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
US6172535B1 (en) * 1999-11-04 2001-01-09 Analog Devices, Inc. High-speed analog comparator structures and methods
US6121084A (en) * 2000-01-27 2000-09-19 Micron Technology, Inc. Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors

Patent Citations (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657575A (en) 1970-03-13 1972-04-18 Hitachi Ltd Threshold voltage compensating circuits for fets
US3806741A (en) 1972-05-17 1974-04-23 Standard Microsyst Smc Self-biasing technique for mos substrate voltage
US4965651A (en) 1973-02-01 1990-10-23 U.S. Philips Corporation CMOS logic array layout
US4020364A (en) 1974-09-28 1977-04-26 U.S. Philips Corporation Resistance read amplifier
US3931617A (en) 1974-10-07 1976-01-06 Signetics Corporation Collector-up dynamic memory cell
US4716314A (en) 1974-10-09 1987-12-29 U.S. Philips Corporation Integrated circuit
US4051354A (en) 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4252579A (en) 1979-05-07 1981-02-24 International Business Machines Corporation Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
US4313106A (en) 1980-06-30 1982-01-26 Rca Corporation Electrically programmable logic array
US4402044A (en) * 1980-11-24 1983-08-30 Texas Instruments Incorporated Microprocessor with strip layout of busses, ALU and registers
US4617649A (en) 1981-11-17 1986-10-14 Ricoh Company, Ltd. Erasable FPLA
US4617649B1 (en) 1981-11-17 1990-04-03 Ricoh Kk
US4604162A (en) 1983-06-13 1986-08-05 Ncr Corporation Formation and planarization of silicon-on-insulator structures
US4570176A (en) 1984-04-16 1986-02-11 At&T Bell Laboratories CMOS Cell array with transistor isolation
US5208657A (en) 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4630088A (en) 1984-09-11 1986-12-16 Kabushiki Kaisha Toshiba MOS dynamic ram
US4766569A (en) 1985-03-04 1988-08-23 Lattice Semiconductor Corporation Programmable logic array
US4761768A (en) 1985-03-04 1988-08-02 Lattice Semiconductor Corporation Programmable logic device
US5102817A (en) 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4673962A (en) 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
US4677589A (en) 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
US4740826A (en) 1985-09-25 1988-04-26 Texas Instruments Incorporated Vertical inverter
US4663831A (en) 1985-10-08 1987-05-12 Motorola, Inc. Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers
US4701423A (en) 1985-12-20 1987-10-20 Ncr Corporation Totally self-aligned CMOS process
US4845537A (en) 1986-12-01 1989-07-04 Mitsubishi Denki Kabushiki Kaisha Vertical type MOS transistor and method of formation thereof
US5017504A (en) 1986-12-01 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Vertical type MOS transistor and method of formation thereof
US4761385A (en) 1987-02-10 1988-08-02 Motorola, Inc. Forming a trench capacitor
US5427972A (en) 1987-02-13 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Method of making a sidewall contact
US4929988A (en) 1987-08-25 1990-05-29 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of the manufacture thereof
US4920515A (en) 1987-10-23 1990-04-24 Ricoh Company, Ltd. Programmable logic array having an improved testing arrangement
US4949138A (en) 1987-10-27 1990-08-14 Texas Instruments Incorporated Semiconductor integrated circuit device
US5001526A (en) 1987-11-10 1991-03-19 Fujitsu Limited Dram cell formed on an insulating layer having a buried semiconductor pillar structure and a manufacturing method thereof
US4888735A (en) 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
US4920389A (en) 1988-03-08 1990-04-24 Oki Electric Industry Co., Ltd. Memory call array structure and process for producing the same
US5072269A (en) 1988-03-15 1991-12-10 Kabushiki Kaisha Toshiba Dynamic ram and method of manufacturing the same
US4906590A (en) 1988-05-09 1990-03-06 Mitsubishi Denki Kabushiki Kaisha Method of forming a trench capacitor on a semiconductor substrate
US5057896A (en) 1988-05-28 1991-10-15 Fujitsu Limited Semiconductor device and method of producing same
US4958318A (en) 1988-07-08 1990-09-18 Eliyahou Harari Sidewall capacitor DRAM cell
US5327380A (en) 1988-10-31 1994-07-05 Texas Instruments Incorporated Method and apparatus for inhibiting a predecoder when selecting a redundant row line
US4920065A (en) 1988-10-31 1990-04-24 International Business Machines Corporation Method of making ultra dense dram cells
US5327380B1 (en) 1988-10-31 1999-09-07 Texas Instruments Inc Method and apparatus for inhibiting a predecoder when selecting a redundant row line
US5021355A (en) 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor
US5028977A (en) 1989-06-16 1991-07-02 Massachusetts Institute Of Technology Merged bipolar and insulated gate transistors
US5316962A (en) 1989-08-15 1994-05-31 Matsushita Electric Industrial Co., Ltd. Method of producing a semiconductor device having trench capacitors and vertical switching transistors
US5181089A (en) 1989-08-15 1993-01-19 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and a method for producing the same
US5083047A (en) 1989-10-26 1992-01-21 Kabushiki Kaisha Toshiba Precharged-type logic circuit having dummy precharge line
US5006909A (en) 1989-10-30 1991-04-09 Motorola, Inc. Dram with a vertical capacitor and transistor
US5010386A (en) 1989-12-26 1991-04-23 Texas Instruments Incorporated Insulator separated vertical CMOS
US5410169A (en) 1990-02-26 1995-04-25 Kabushiki Kaisha Toshiba Dynamic random access memory having bit lines buried in semiconductor substrate
US5216266A (en) 1990-04-11 1993-06-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having memory cells formed in trench and manufacturing method therefor
US5107459A (en) 1990-04-20 1992-04-21 International Business Machines Corporation Stacked bit-line architecture for high density cross-point memory cell array
US5276343A (en) 1990-04-21 1994-01-04 Kabushiki Kaisha Toshiba Semiconductor memory device having a bit line constituted by a semiconductor layer
US5177576A (en) 1990-05-09 1993-01-05 Hitachi, Ltd. Dynamic random access memory having trench capacitors and vertical transistors
US5378914A (en) 1990-05-31 1995-01-03 Canon Kabushiki Kaisha Semiconductor device with a particular source/drain and gate structure
US4987089A (en) 1990-07-23 1991-01-22 Micron Technology, Inc. BiCMOS process and process for forming bipolar transistors on wafers also containing FETs
US5220530A (en) 1990-08-07 1993-06-15 Oki Electric Industry Co., Ltd. Semiconductor memory element and method of fabricating the same
US5087581A (en) 1990-10-31 1992-02-11 Texas Instruments Incorporated Method of forming vertical FET device with low gate to source overlap capacitance
US5140388A (en) 1991-03-22 1992-08-18 Hewlett-Packard Company Vertical metal-oxide semiconductor devices
US5363325A (en) 1991-07-01 1994-11-08 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device having high integration density
US5223081A (en) 1991-07-03 1993-06-29 Doan Trung T Method for roughening a silicon or polysilicon surface for a semiconductor substrate
US5110752A (en) 1991-07-10 1992-05-05 Industrial Technology Research Institute Roughened polysilicon surface capacitor electrode plate for high denity dram
US5341331A (en) 1991-07-31 1994-08-23 Samsung Electronics, Co., Ltd. Data transmission circuit having common input/output lines
US5202278A (en) 1991-09-10 1993-04-13 Micron Technology, Inc. Method of forming a capacitor in semiconductor wafer processing
US5376575A (en) 1991-09-26 1994-12-27 Hyundai Electronics Industries, Inc. Method of making dynamic random access memory having a vertical transistor
US5221867A (en) 1991-10-11 1993-06-22 Intel Corporation Programmable logic array with internally generated precharge and evaluation timing
US5177028A (en) 1991-10-22 1993-01-05 Micron Technology, Inc. Trench isolation method having a double polysilicon gate formed on mesas
US5128831A (en) 1991-10-31 1992-07-07 Micron Technology, Inc. High-density electronic package comprising stacked sub-modules which are electrically interconnected by solder-filled vias
US5191509A (en) 1991-12-11 1993-03-02 International Business Machines Corporation Textured polysilicon stacked trench capacitor
US5329481A (en) 1991-12-16 1994-07-12 U.S. Philips Corporation Semiconductor device having a memory cell
US5156987A (en) 1991-12-18 1992-10-20 Micron Technology, Inc. High performance thin film transistor (TFT) by solid phase epitaxial regrowth
US5308782A (en) 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
US5451538A (en) 1992-03-02 1995-09-19 Motorola, Inc. Method for forming a vertically integrated dynamic memory cell
US5731609A (en) * 1992-03-19 1998-03-24 Kabushiki Kaisha Toshiba MOS random access memory having array of trench type one-capacitor/one-transistor memory cells
US5365477A (en) 1992-06-16 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Dynamic random access memory device
US5466625A (en) 1992-06-17 1995-11-14 International Business Machines Corporation Method of making a high-density DRAM structure on SOI
US5416736A (en) 1992-07-28 1995-05-16 Motorola, Inc. Vertical field-effect transistor and a semiconductor memory cell having the transistor
US5292676A (en) 1992-07-29 1994-03-08 Micron Semiconductor, Inc. Self-aligned low resistance buried contact process
US5320880A (en) 1992-10-20 1994-06-14 Micron Technology, Inc. Method of providing a silicon film having a roughened outer surface
US5429955A (en) 1992-10-26 1995-07-04 Texas Instruments Incorporated Method for constructing semiconductor-on-insulator
US5414288A (en) 1992-11-19 1995-05-09 Motorola, Inc. Vertical transistor having an underlying gate electrode contact
US5385853A (en) 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
US5379255A (en) 1992-12-14 1995-01-03 Texas Instruments Incorporated Three dimensional famos memory devices and methods of fabricating
US5266514A (en) * 1992-12-21 1993-11-30 Industrial Technology Research Institute Method for producing a roughened surface capacitor
US5422499A (en) 1993-02-22 1995-06-06 Micron Semiconductor, Inc. Sixteen megabit static random access memory (SRAM) cell
US5409563A (en) 1993-02-26 1995-04-25 Micron Technology, Inc. Method for etching high aspect ratio features
US5416350A (en) 1993-03-15 1995-05-16 Kabushiki Kaisha Toshiba Semiconductor device with vertical transistors connected in series between bit lines
US5391911A (en) 1993-03-29 1995-02-21 International Business Machines Corporation Reach-through isolation silicon-on-insulator device
US5438009A (en) 1993-04-02 1995-08-01 United Microelectronics Corporation Method of fabrication of MOSFET device with buried bit line
US5402012A (en) 1993-04-19 1995-03-28 Vlsi Technology, Inc. Sequentially clocked domino-logic cells
US5396452A (en) 1993-07-02 1995-03-07 Wahlstrom; Sven E. Dynamic random access memory
US5385854A (en) 1993-07-15 1995-01-31 Micron Semiconductor, Inc. Method of forming a self-aligned low density drain inverted thin film transistor
US5392245A (en) 1993-08-13 1995-02-21 Micron Technology, Inc. Redundancy elements using thin film transistors (TFTs)
US5445986A (en) 1993-09-03 1995-08-29 Nec Corporation Method of forming a roughened surface capacitor with two etching steps
US5460316A (en) 1993-09-15 1995-10-24 At&T Global Information Solutions Company Stencils having enhanced wear-resistance and methods of manufacturing the same
US5382540A (en) 1993-09-20 1995-01-17 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
US5443992A (en) 1993-12-01 1995-08-22 Siemens Aktiengesellschaft Method for manufacturing an integrated circuit having at least one MOS transistor
US5393704A (en) 1993-12-13 1995-02-28 United Microelectronics Corporation Self-aligned trenched contact (satc) process
US5396093A (en) 1994-02-14 1995-03-07 Industrial Technology Research Institute Vertical DRAM cross point memory cell and fabrication method
US5451889A (en) 1994-03-14 1995-09-19 Motorola, Inc. CMOS output driver which can tolerate an output voltage greater than the supply voltage without latchup or increased leakage current
US5460988A (en) 1994-04-25 1995-10-24 United Microelectronics Corporation Process for high density flash EPROM cell
US5414287A (en) 1994-04-25 1995-05-09 United Microelectronics Corporation Process for high density split-gate memory cell for flash or EPROM
US5422296A (en) 1994-04-25 1995-06-06 Motorola, Inc. Process for forming a static-random-access memory cell
US5432739A (en) 1994-06-17 1995-07-11 Philips Electronics North America Corporation Non-volatile sidewall memory cell method of fabricating same
US5440158A (en) 1994-07-05 1995-08-08 Taiwan Semiconductor Manufacturing Company Ltd. Electrically programmable memory device with improved dual floating gates

Non-Patent Citations (99)

* Cited by examiner, † Cited by third party
Title
Adler, E. , et al., "The Evolution of IBM CMOS DRAM Technology", IBM Journal of Research & Development, 39(1-2), (Jan.-Mar. 1995),167-188.
Asai, S. , "Technology Challenges for Integration Near and Below 0.1 micrometer", Proceedings of the IEEE, 85(4), Special Issue on Nanometer-Scale Science & Technology,(Apr. 1997),505-520.
Askin, H. O., et al., "Fet Device Parameters Compensation Circuit", IBM Technical Disclosure Bulletin, 14, (Dec. 1971), 2088-2089.
Banerjee, S. K., et al., "Characterization of Trench Transistors for 3-D Memories", 1986 Symposium on VLSI Technology, Digest of Technical Papers, San Diego, CA,(May 1986),79-80.
Blalock, T. N., et al., "A High-Speed Sensing Scheme for 1T Dynamic RAM's Utilizing the Clamped Bit-Line Sense Amplifier", IEEE Journal of Solid-State Circuits, 27(4), (Apr. 1992),pp. 618-624.
Bomchil, G. , "Porous Silicon: The Material and its Applications in Silicon-On-Insulator Technologies", Applied Surface Science, 41/42, (1989),604-613.
Burnett, D. , "Implications of Fundamental Threshold Voltage Variations for High-Density SRAM and Logic Circuits", 1994 Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI,(Jun. 1994),15-16.
Burnett, D. , "Statistical Threshold-Voltage Variation and its Impact on Supply-Voltage Scaling", Proceedings SPIE: Microelectronic Device and Multilevel Interconnection Technology, 2636, (1995),83-90.
Chen, M. J., et al., "Back-Gate Forward Bias Method for Low-Voltage CMOS Digital Circuits", IEEE Transactions on Electron Devices, 43, (Jun. 1996),904-909.
Chen, M. J., et al., "Optimizing the Match in Weakly Inverted MOSFET's by Gated Lateral Bipolar Action", IEEE Transactions on Electron Devices, 43, (May 1996),766-773.
Chung, I. Y., et al., "A New SOI Inverter for Low Power Applications", Proceedings of the 1996 IEEE International SOI Conference, Sanibel Island, FL,(1996),20-21.
Clemen, R. , et al., "VT-compensated TTL-Compatible Mos Amplifier", IBM Technical Disclosure Bulletin, 21, (1978),2874-2875.
De, V. K., "Random MOSFET Parameter Fluctuation Limits to Gigascale Integration (GSI)", 1996 Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI,(Jun. 11-13, 1996),198-199.
DeBar, D. E., "Dynamic Substrate Bias to Achieve Radiation Hardening", IBM Technical Disclosure Bulletin, 25, (1983),5829-5830.
Denton, Jack P., et al., "Fully depleted dual-gated thin-film SOI P-MOSFETs fabricated in SOI islands with an isolated buried polysilicon backgate", IEEE Electron Device Letters, 17(11), (Nov. 1996),509-511.
Fong, Y. , "Oxides Grown on Textured Single-Crystal Silicon-Dependence on Process and Application in EEPROMs", IEEE Transactions on Electron Devices, 37(3), (Mar. 1990),pp. 583-590.
Forbes, L. , "Automatic On-clip Threshold Voltage Compensation", IBM Technical Disclosure Bulletin, 14, (1972),2894-2895.
Forbes, L. , et al., "Resonant Forward-Biased Guard-Ring Diodes for Suppression of Substrate Noise in Mixed-Mode CMOS Circuits", Electronics Letters, 31, (Apr. 1995),720-721.
Foster, R. , et al., "High Rate Low-Temperature Selective Tungsten", In: Tungsten and Other Refractory Metals for VLSI Applications III, V.A. Wells, ed., Materials Res. Soc., Pittsburgh, PA,(1988),69-72.
Frantz, H. , et al., "Mosfet Substrate Bias-Voltage Generator", IBM Technical Disclosure Bulletin, 11, (Mar. 1969),1219-1220.
Fuse, Tsuneaki , et al., "A 0.5V 200MHz 1-Stage 32b ALU Using a Body Bias Controlled SOI Pass-Gate Logic", 1997 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, (1997),286-287.
Gong, S. , "Techniques for reducing switching noise in high speed digital systems", Proceedings Eighth Annual IEEE International ASIC Conference and Exhibit, (1995),21-24.
Hao, M. Y., "Electrical Characteristics of Oxynitrides Grown on Textured Single-Crystal Silicon", Appl. Phys. Lett., 60, (Jan. 1992),445-447.
Harada, M. , "Suppression of Threshold Voltage Variation in MTCMOS/SIMOX Circuit Operating Below 0.5 V", 1996 Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI,(Jun. 11-13, 1996),96-97.
Heavens, O. , Optical Properties of Thin Solid Films, Dover Pubs. Inc., New York,(1965),155-206.
Hisamoto, D. , et al., "A New Stacked Cell Structure for Giga-Bit DRAMs using Vertical Ultra-Thin SOI (DELTA) MOSFETs", 1991 IEEE International Electron Devices Meeting, Technical Digest, Washington, D.C.,(Dec. 8-11, 1991),959-961.
Hodges, David A., et al., "MOS Decoders", In: Analysis and Design of Digital Integrated Circuits, 2nd Edition, Section: 9.1.3,(1988),354-357.
Holman, W. T., et al., "A Compact Low Noise Operational Amplifier for a 1.2 Micrometer Digital CMOS Technology", IEEE Journal of Solid-State Circuits, 30,(Jun. 1995),710-714.
Horie, Hiroshi , et al., "Novel High Aspect Ratio Aluminum Plug for Logic/DRAM LSI's Using Polysilicon-Aluminum Substitute", Technical Digest: IEEE International Electron Devices Meeting, San Francisco, CA,(1996),946-948.
Hu, G. , "Will Flash Memory Replace Hard Disk Drive?", 1994 IEEE International Electron Device Meeting, Panel Discussion, Session 24, Outline,(Dec. 1994),2 pages.
Huang, W. L., et al., "TFSOI Complementary BiCMOS Technology for Low Power Applications", IEEE Transactions on Electron Devices, 42, (Mar. 1995),506-512.
Jun, Y. K., "The Fabrication and Electrical Properties of Modulated Stacked Capacitor for Advanced DRAM Applications", IEEE Electron Device Letters, 13, (Aug. 1992),430-432.
Jung, T. S., "A 117-mm2 3.3-V Only 128-Mb Multilevel NAND Flash Memory for Mass Storage Applications", IEEE Journal of Solid-State Circuits, 31, (Nov. 1996),1575-1583.
Kang, H. K., et al., "Highly Manufacturable Process Technology for Reliable 256 Mbit and 1Gbit DRAMs", IEEE International Electron Devices Meeting, Technical Digest, San Francisco, CA,(Dec. 11-14, 1994),635-638.
Kim, Y. S., "A Study on Pyrolysis DMEAA for Selective Deposition of Aluminum", In: Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, R.C. Ellwanger, et al., (eds.), Materials Research Society, Pittsburgh, PA,(1996),675-680.
Kishimoto, T. , et al., "Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)", Japanese Journal of Applied Physics, 34, (Dec. 1995),6899-6902.
Klaus, J W., et al., "Atomic Layer Controlled Growth of SiO2 Films Using Binary Reaction Sequence Chemistry", Applied Physics Letters, 70(9), (Mar. 3, 1997),1092-94.
Kohyama, Y. , et al., "Buried Bit-Line Cell for 64MB DRAMs", 1990 Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI,(Jun. 4-7, 1990),17-18.
Koshida, N. , "Efficient Visible Photoluminescence from Porous Silicon", Japanese Journal of Applied Physics, 30, (Jul. 1991),L1221-L1223.
Kuge, Shigehiro , et al., "SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories", IEEE Journal of Solid-State Circuits, 31(4), (Apr. 1996),pp. 586-591.
Lantz, II, L. , "Soft Errors Induced By Alpha Particles", IEEE Transactions on Reliability, 45, (Jun. 1996),174-179.
Lehmann, et al., "A Novel Capacitor Technology Based on Porous Silicon", Thin Solid Films 276, Elsevier Science, (1996),138-42.
Lehmann, V. , "The Physics of Macropore Formation in Low Doped n-Type Silicon", Journal of the Electrochemical Society, 140(10), (Oct. 1993),2836-2843.
Lu, N. , et al., "The SPT Cell-A New Substrate-Plate Trench Cell for DRAMs", 1985 IEEE International Electron Devices Meeting, Technical Digest, Washington, D.C.,(Dec. 1-4, 1985),771-772.
MacSweeney, D. , et al., "Modelling of Lateral Bipolar Devices in a CMOS Process", IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN,(Sep. 1996),27-30.
Maeda, S. , et al., "A Vertical Phi-Shape Transistor (VPhiT) Cell for 1 Gbit DRAM and Beyond", 1994 Symposium of VLSI Technology, Digest of Technical Papers, Honolulu, HI,(Jun. 7-9, 1994),133-134.
Maeda, S. , et al., "Impact of a Vertical Phi-Shape Transistor (VPhiT) Cell for 1 Gbit DRAM and Beyond", IEEE Transactions on Electron Devices, 42, (Dec. 1995),2117-2123.
Malaviya, S. , IBM TBD, 15, (Jul. 1972),p. 42.
Masu, K. , et al., "Multilevel Metallization Based on AI CVD", 1996 IEEE Symposium of VLSI Technology, Digest of Technical Papers, Honolulu, HI,(Jun. 11-13, 1996),44-45.
McCredie, B. D., et al., "Modeling, Measurement, and Simulation of Simultaneous Switching Noise", IEEE Transactions on Components, Packaging, and Manufacturing Technology-Part B, 19, (Aug. 1996),461-472.
Muller, K. , et al., "Trench Storage Node Technology for Gigabit DRAM Generations", Digest IEEE International Electron Devices Meeting, San Francisco, CA,(Dec. 1996),507-510.
Nitayama, A. , et al., "High Speed and Compact CMOS Circuits with Multipillar Surrounding Gate Transistors", IEEE Transactions on Electron Devices, 36, (Nov. 1989),2605-2606.
Ohba, T. , et al., "Evaluation on Selective Deposition of CVD W Films by Measurement of Surface Temperature", In: Tungsten and Other Refractory Metals for VLSI Applications II, Materials Research Society, Pittsburgh, PA,(1987),59-66.
Ohba, T. , et al., "Selective Chemical Vapor Deposition of Tungsten Using Silane and Polysilane Reductions", In: Tungsten and Other Refractory Metals for VLSI Applications IV, Materials Research Society, Pittsburgh, PA,(1989),17-25.
Ohno, Y. , et al., "Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation", Simulation of Semiconductor Devices and Processes, 6, (Sep. 1995),302-305.
Oowaki, Y. , et al., "New alpha-Particle Induced Soft Error Mechanism in a Three Dimensional Capacitor Cell", IEICE Transactions on Electronics, 78-C, (Jul. 1995),845-851.
Oshida, S. , et al., "Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation", IEICE Transactions on Electronics, 76-C, (Nov. 1993),1604-1610.
Ott, A W., et al., "AI303 Thin Film Growth on Si(100) Using Binary Reaction Sequence Chemistry", Thin Solid Films, vol. 292, (1997), 135-44.
Ozaki, T. , et al., "A Surrounding Isolation-Merged Plate Electrode (SIMPLE) Cell with Checkered Layout for 256Mbit DRAMs and Beyond", 1991 IEEE International Electron Devices Meeting, Washington, D.C.,(Dec. 8-11, 1991),469-472.
Parke, S. A., et al., "A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX", IEEE Electron Device Letters, 14, (Jan. 1993),33-35.
Pein, H. , "A 3-D Sidewall Flash EPROM Cell and Memory Array", IEEE Transactions on Electron Devices, 40, (Nov. 1993),2126-2127.
Pein, H. , "Performance of the 3-D Pencil Flash EPROM Cell and Memory Array", IEEE Transactions on Electron Devices, 42, (Nov. 1995),1982-1991.
Pein, H. B., "Performance of the 3-D Sidewall Flash EPROM Cell", IEEE International Electron Devices Meeting, Technical Digest, (1993),11-14.
Puri, Y. , "Substrate Voltage Bounce in NMOS Self-biased Substrates", IEEE Journal of Solid-State Circuits, SC-13, (Aug. 1978),515-519.
Ramo, S. , "Fields and Waves in Communication Electronics, Third Edition", John Wiley & Sons, Inc.,(1994),428-433.
Rao, K. V., et al., "Trench Capacitor Design Issues in VLSI DRAM Cells", 1986 IEEE International Electron Devices Meeting, Technical Digest, Los Angeles, CA,(Dec. 7-10, 1986),140-143.
Rhyne, In: Fundamentals of Digital Systems Design, Prentice Hall, New Jersey,(1973),p. 70-71.
Richardson, W. F., et al., "A Trench Transistor Cross-Point DRAM Cell", IEEE International Electron Devices Meeting, Washington, D.C.,(Dec. 1-4, 1985),714-717.
Sagara, K. , "A 0.72 micro-meter2 Recessed STC (RSTC) Technology for 256Mbit DRAMs using Quarter-Micron Phase-Shift Lithography", 1992 Symposium on VLSI Technology, Digest of Technical Papers, Seattle, WA,(Jun. 2-4, 1992),10-11.
Saito, M. , "Technique for Controlling Effective Vth in Multi-Gbit DRAM Sense Amplifier", 1996 Symposium on VLSI Circuits, Digest of Technical Papers, Honolulu, HI,(Jun. 13-15, 1996),106-107.
Seevinck, E. , et al., "Current-Mode Techniques for High-Speed VLSI Circuits with Application to Current Sense Amplifier for CMOS SRAM's", IEEE Journal of Solid State Circuits, 26(4), (Apr. 1991),pp. 525-536.
Senthinathan, R. , et al., "Reference Plane Parasitics Modeling and Their Contribution to the Power and Ground Path "Effective" Inductance as Seen by the Output Drivers", IEEE Transactions on Microwave Theory and Techniques, 42, (Sep. 1994),1765-1773.
Shah, A. H., et al., "A 4Mb DRAM with Cross-Point Trench Transistor Cell", 1986 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, (Feb. 21, 1986),268-269.
Shah, A. H., et al., "A 4-Mbit DRAM with Trench-Transistor Cell", IEEE Journal of Solid-State Circuits, SC-21, (Oct. 1986),618-625.
Sherony, M. J., "Reduction of Threshold Voltage Sensitivity in SOI MOSFET's", IEEE Electron Device Letters, 16, (Mar. 1995),100-102.
Shimomura, K. , et al., "A 1V 46ns 16Mb SOI-DRAM with Body Control Technique", 1997 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, (Feb. 6, 1997),68-69.
Stanisic, B. R., et al., "Addressing Noise Decoupling in Mixed-Signal IC's: Power Distribution Design and Cell Customization", IEEE Journal of Solid-State Circuits, 30, (Mar. 1995),321-326.
Stellwag, T. B., "A Vertically-Integrated GaAs Bipolar DRAM Cell", IEEE Transactions on Electron Devices, 38, (Dec. 1991),2704-2705.
Su, D. K., et al., "Experimental Results and Modeling Techniques for Substrate Noise in Mixed-Signal Integrated Circuits", IEEE Journal of Solid-State Circuits, 28(4), (Apr. 1993),420-430.
Suma, Katsuhiro, et al., "An SOI-DRAM with Wide Operating Voltage Range by CMOS/SIMOX Technology", IEEE Journal of Solid-State Circuits, 29(11), (Nov. 1994),pp. 1323-1329.
Sun, J. , "CMOS Technology for 1.8V and Beyond", Int'l Symp. on VLSI Technology, Systems and Applications: Digest of Technical Papers, (1997),293-297.
Sunouchi, K. , et al., "A Surrounding Gate Transistor (SGT) Cell for 64/256Mbit DRAMs", 1989 IEEE International Electron Devices Meeting, Technical Digest, Washington, D.C.,(Dec. 3-6, 1989),23-26.
Sunouchi, K. , et al., "Process Integration for 64M DRAM Using an Asymmetrical Stacked Trench Capacitor (AST) Cell", 1990 IEEE International Electron Devices Meeting, San Francisco, CA,(Dec. 9-12, 1990),647-650.
Suntola, T. , "Atomic Layer Epitaxy", Handbook of Crystal Growth, 3; Thin Films of Epitaxy, Part B: Growth Mechanics and Dynamics, Amsterdam,(1994),601-663.
Sze, S M., VLSI Technology, 2nd Edition, Mc Graw-Hill, NY, (1988),90.
Takai, M. , et al., "Direct Measurement and Improvement of Local Soft Error Susceptibility in Dynamic Random Access Memories", Nuclear Instruments & Methods in Physics Research, B-99, (Nov. 7-10, 1994),562-565.
Takao, Y. , et al., "A 4-um(2) Full-CMOS SRAM Cell Technology for 0.2-um High Performance Logic LSIs", 1997 Symp. on VLSI Technology: Digest of Technical Papers, Kyoto, Japan,(1997),11-12.
Takato, H. , et al., "High Performance CMOS Surrounding Gate Transistor (SGT) for Ultra High Density LSIs", IEEE International Electron Devices Meeting, Technical Digest, (1988),222-225.
Takato, H. , et al., "Impact of Surrounding Gate Transistor (SGT) for Ultra-High Density LSI's", IEEE Transactions on Electron Devices, 38, (Mar. 1991),573-578.
Tanabe, N. , et al., "A Ferroelectric Capacitor Over Bit-Line (F-COB) Cell for High Density Nonvolatile Ferroelectric Memories", 1995 Symposium on VLSI Technology, Digest of Technical Papers, Kyoto, Japan,(Jun. 6-8, 1995),123-124.
Temmler, D. , "Multilayer Vertical Stacked Capacitors (MVSTC) for 64Mbit and 256Mbit DRAMs", 1991 Symposium on VLSI Technology, Digest of Technical Papers, Oiso,(May 28-30, 1991),13-14.
Terauchi, M. , "A Surrounding Gate Transistor (SGT) Gain Cell for Ultra High Density DRAMs", 1993 Symposium on VLSI Technology, Digest of Technical Papers, Kyoto, Japan,(1993),21-22.
Tsui, P. G., et al., "A Versatile Half-Micron Complementary BiCMOS Technology for Microprocessor-Based Smart Power Applications", IEEE Transactions on Electron Devices, 42, (Mar. 1995),564-570.
Verdonckt-Vandebroek, S. , et al., "High-Gain Lateral Bipolar Action in a MOSFET Structure", IEEE Transactions on Electron Devices 38, (Nov. 1991),2487-2496.
Vittal, A. , et al., "Clock Skew Optimization for Ground Bounce Control", 1996 IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, San Jose, CA,(Nov. 10-14, 1996),395-399.
Wang, N. , Digital MOS Integrated Circuits, Prentice Hall, Inc. , Englewood Cliffs, NJ,(1989),p. 328-333.
Wang, P. W., "Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices", Japanese Journal of Applied Physics, 35, (Jun. 1996),3369-3373.
Watanabe, H. , et al., "A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMs", IEEE International Electron Devices Meeting, Technical Digest, San Francisco, CA,(Dec. 13-16, 1992),259-262.
Watanabe, S. , et al., "A Novel Circuit Technology with Surrounding Gate Transistors (SGT's) for Ultra High Density DRAM's", IEEE Journal of Solid-State Circuits, 30, (Sep. 1995),960-971.

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