US7577319B2 - Semiconductor optical device and manufacturing method thereof - Google Patents
Semiconductor optical device and manufacturing method thereof Download PDFInfo
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- US7577319B2 US7577319B2 US11/838,256 US83825607A US7577319B2 US 7577319 B2 US7577319 B2 US 7577319B2 US 83825607 A US83825607 A US 83825607A US 7577319 B2 US7577319 B2 US 7577319B2
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Definitions
- the present invention concerns a semiconductor optical device and a manufacturing method thereof and it particularly relates to a semiconductor optical modulation device and an integrated semiconductor light emitting device formed by integrating the same.
- the present invention intends to provide a semiconductor optical modulation device and a semiconductor optical integrated device suitable to high speed, reduced-size and less power consuming optical transceiver modules at a reduced cost.
- EA modulation device utilizing the electro absorption effect has an excellent property in view of the reduced size, less power consumption, integration property with semiconductor laser diodes (LD), etc.
- a semiconductor optical integrated device in which an EA modulation device and a distributed feedback (DFB) type semiconductor laser of excellent coherency are integrated monolithically on one semiconductor substrate (hereinafter referred to as an EA/DFB laser) has been used generally as a light emitting device for high speed—long distance fiber transmission.
- DFB distributed feedback
- the window structure is a method of decreasing the effect of optical feedback by burying a portion between the optical absorption region and the light emitting edge with a material having a refractive index lower than an average refractive index of the optical absorption region, thereby extending the distribution shape of an optical intensity from the top end of a waveguide structure of the optical absorption region to the light emitting edge and decreasing re-coupling of a light reflected at the light emitting edge to the optical waveguide structure (refer to IEEE Journal of Quantum Electronics, Vol. QE-20, No. 3, 1984, pp. 236-245).
- the reflectance can be decreased by a simple method as described above, it involves problems to be described below.
- a semiconductor material having a reflective index lower than that of the optical absorption region for forming a window structure a material identical with the material for a substrate semiconductor is generally used. Further, impurity doping is applied so as to provide an electric conductivity of a polarity opposite to that of a semiconductor substrate in most cases. Accordingly, a pn junction is formed in the window portion. In a case where a voltage applied to a modulation region leaks to the window structure, since the pn junction formed in the window structure functions as a parasitic capacitance to increase a CR time constant, this deteriorates for the high speed response property.
- FIG. 1A shows a perspective view of an EA/DFB laser using an existent window structure.
- FIG. 1B shows a cross sectional view in the direction of an optical axis of the EA/DFB laser using the existent window structure.
- FIG. 1C is an enlarged view for the periphery of a window structure portion.
- a low reflection film with a reflectance of 1% or less is formed on a light emitting edge in addition to the window structure but this is not illustrated in the drawings.
- an optical absorption region 2 in an EA modulator is undoped and forms a pin structure together with an n-InP clad 1 and a p-InP clad 7 .
- “Undope” means herein not to intentionally mix impurities for controlling the polarity of the semiconductor during crystal growth and the like and the impurity concentration is, for example, at 5 ⁇ 10 16 cm ⁇ 3 or lower.
- the thickness of a depletion layer formed by pn junction in a window structure 6 is less than the thickness of the undope layer in the pin structure of a general optical absorption region.
- the window structure referred to herein is a structure in which a portion between the optical absorption region 2 and the light emitting edge is buried with a p-InP clad 7 as a semiconductor material having a refractive index lower than that of the optical absorption region 2 . Since the static capacitance formed by the junction is in inverse proportion to the thickness of the depletion layer or the thickness of the undope layer, the window structure 6 has a larger static capacitance per unit area compared with that of the optical absorption region 2 . For example, in the structure shown in FIG.
- the thickness of the depletion layer of the pn junction is from 40 nm to 50 nm. This is a thickness of about one to several of the undope layer formed in a general electro absorption optical modulator.
- the static capacitance of the entire EA modulator is estimated as about 0.25 pF in a case of assuming the thickness of the undope layer of the optical absorption region 2 as 200 nm, the mesa width of a ridge waveguide structure 9 formed on the optical absorption region 2 as 2 ⁇ m, the modulator length which is the length in the direction of the optical axis of the optical absorption region 2 as 200 ⁇ m, the width of the ridge waveguide structure 9 perpendicular to the direction of the optical axis of a region formed above the ridge waveguide structure 9 as 10 ⁇ m, and the area of a pad portion for wire bonding in the EA modulator electrode 12 as 3600 ⁇ m 2 , and assuming that the structure is planarized by a polyimide resin 11 having a dielectric constant of 1.5.
- increase of the parasitic capacitance in a case where a voltage applied to the EA modulator should leak to the window structure is estimated by calculation.
- FIG. 1D shows a displacement shown by arrows in FIG. 1C from the optical absorption region top end 2 ′ to a p + contact layer top end 8 ′ applied with p-doping at a high concentration and in contact with the EA modulator electrode 12 on the abscissa, and change of the total static capacitance of the EA modulator assuming that a voltage applied to the electrode is effectively applied to a lower portion of the contact layer 8 on the ordinate.
- the abscissa is defined as positive in a case where the p + contact layer top end 8 ′ is formed nearer to the light emitting edge than the optical absorption region top end 2 ′.
- the dotted line indicates the parasitic capacitance due to the pn junction of the window structure 6 and the solid line indicates the total capacitance for the EA modulator.
- the total static capacitance of the EA modulator increases in about 30% by the displacement only of about 5 ⁇ m. This is because the width of the depletion layer due to the simple pn junction is less than that of the undope layer formed to the EA modulator portion and the static capacitance per unit area is larger.
- p + contact layer top end 8 ′ applied with p-doping at a high concentration may be retracted from the optical absorption region top end 2 ′ relative to the light emitting edge.
- p + contact layer top end 8 ′ greatly from the optical absorption region top end 2 ′ so that the voltage applied to the optical absorption region 2 does not leak to the window structure application of an electric field to the vicinity of the junction portion between the optical absorption region 2 and the window structure 6 becomes insufficient.
- photo-carriers caused by basic absorption are less discharged, for example, in a portion of the optical absorption region 2 surrounded by a dotted line in FIG. 2 .
- the electric field applied to the EA modulator is offset by the electric field screening effect and switching of light absorption/transmission in the EA modulator can no more follow the modulation voltage. This is a so-called pile-up phenomenon which deteriorates the high speed response property like increase of the electrostatic capacitance.
- an undope optical waveguide structure 4 ′ in which the compositional wavelength for each of multi-layers constituting the waveguide structure is sufficiently shorter than that of a signal light and an average refractive index for the entire waveguide structure is about identical with that of the optical absorption region may be disposed between the optical absorption region 2 and the window structure 6 as illustrated in FIGS. 3A and 3B .
- FIG. 3A is an entire view for the cross section along the direction of an optical axis of a device using a novel window structure according to the invention
- FIG. 3B is an enlarged view for the periphery of the novel window structure according to the invention.
- Undope means herein not to intentionally mix impurities for controlling the polarity of the semiconductor during crystal growth and the like and the impurity concentration is, for example, at 5 ⁇ 10 16 cm ⁇ 3 or lower.
- a pin junction is formed by inserting such an undope layer between an n-InP clad 1 and a p-InP clad 7 . Since the thickness of the undope layer is larger than the thickness of a depletion layer formed by the pn junction in the window structure 6 , the static capacitance per unit area can be decreased greatly. Accordingly, even when the p + contact layer 8 of the electrode for use in the EA modulator is formed above the undope waveguide layer 4 ′, increase of the parasitic capacitance can be suppressed.
- FIG. 4A shows displacement from the optical absorption region top end 2 ′ to the p + contact layer top end 8 ′ on the abscissa and the change of total static capacitance of the EA modulator assuming that the voltage applied to the electrode is effectively applied to a lower portion of the p + contact layer 8 in the existent window structure and the novel window structure.
- the abscissa is defined as positive in a case where the p + contact layer top end 8 ′ is formed nearer to the light emitting edge than the optical absorption region top end 2 ′.
- the thickness of the undope optical waveguide 4 ′ is 200 nm and the values of other parameters are identical with those calculated shown in FIG.
- FIG. 4A a dotted line shows values for the existent window structure and a solid line shows values for the window structure using the new proposed waveguide 4 ′.
- increase of the static capacitance is suppressed to about one-to-several compared with that in the existent window structure as shown in FIG. 1 .
- FIG. 4B shows the result of calculation for f 3dB bandwidth calculated on the basis of the change of the static capacitance.
- the dotted line shows the value when using the existent window structure and the solid line shows the value when using the new window structure.
- the amount of the degradation in the high speed response bandwidth is extremely small compared with that of the existent structure.
- the voltage is applied, in the same manner as the optical absorption region 2 , also to a portion of the undope optical waveguide 4 ′ in the new window structure, since the positional wavelength constituting the undope optical window guide 4 ′ sufficiently shorter than that of the signal light, the optical absorption in the undope optical waveguide 4 ′ is negligibly small.
- the structure of the undope optical waveguide 4 ′ is formed as a structure by stacking an InGaAsP growing layer of 100 nm thickness and 1300 nm composition wavelength succeeding to an InGaAsP bulk growing layer of 50 nm thickness and 1150 nm compositional wavelength, and further stacking an InGaAsP bulk grown layer of 50 nm thickness and 1150 nm compositional wavelength.
- the thickness of the undope layer is 200 nm.
- 4C shows the result of calculation for optical absorption due to Franz-Keldysh effect in a case of assuming the length as 50 ⁇ m in the direction of an optical length to which a voltage is applied effectively and in a case where a signal light at a wavelength of 1.55 ⁇ m is incident to the undope optical waveguide 4 ′.
- the static extinction ratio in the undope optical waveguide 4 ′ is about 0.5 dB and the light is scarcely absorbed.
- the electrode structure for the modification region can completely cover the optical absorption region and can suppress the occurrence of the pile-up phenomenon with no worry for the increase of the parasitic capacitance.
- the invention can provide, in an electro absorption optical modulation device, a window structure of low reflectance capable of overcoming trade off between the increase of the parasitic capacitance and the pile-up, not requiring high fabrication accuracy, and excellent in high speed response property. Further, the device can be manufactured at a good production yield in the manufacturing method therefor.
- the present invention is suitable, for example, to an uncooled EA/DFB laser designed so as to operate for a wide temperature range and an EA/DFB laser of high speed modulation, for example, 40 Gbps. Further, an optical device integrated with an optical modulation device corresponding to a wide wavelength variable width can be attained by integration with a wavelength tunable optical source.
- FIG. 1A is a perspective view of an EA/DFB laser using an existent window structure
- FIG. 1B is a cross sectional view taken along an optical axis of an EA/DFB laser using an existent window structure
- FIG. 1C is a schematic view enlarged for the periphery of the existent window structure
- FIG. 1D is a view showing an example of calculation for the increase of a parasitic capacitance by the existent window structure
- FIG. 2 is a view showing a pile up phenomenon in a schematic view of an EA/DFB laser using the existent window structure
- FIG. 3A is a cross sectional view taken along an optical axis of a semiconductor optical integrated device using a novel window structure according to the invention
- FIG. 3B is a schematic view enlarged for the periphery of a novel window structure according to the invention.
- FIG. 4A is a view for explaining the suppression of increase in the parasitic capacitance by the novel window structure according to the invention.
- FIG. 4B is a view for explaining the suppression of deterioration in a f 3db bandwidth by the novel window structure according to the invention.
- FIG. 4C is a view describing optical absorption in the novel window structure according to the invention.
- FIG. 5A is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention
- FIG. 5B is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5C is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5D is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5E is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5F is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5G is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5H is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5I is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5J is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5K is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 5L is a view showing a manufacturing step of a semiconductor optical integrated device in a first embodiment of the invention.
- FIG. 6 is a perspective view of a curved waveguide type semiconductor optical integrated device with an optical axis being in a curved shape of a second embodiment according to the invention
- FIG. 7A is a perspective view of a BH type semiconductor optical integrated device of a third embodiment according to the invention.
- FIG. 7B is a perspective view showing a cross section taken along a central portion of a BH type semiconductor optical integrated device in a third embodiment according to the invention.
- FIG. 8A is a perspective view for the constitution of a semiconductor optical integrated device in which a semiconductor laser is a tunable wavelength laser in a fourth embodiment according to the invention.
- FIG. 8B is a perspective view showing a cross section taken along a central portion of a semiconductor optical integrated device in which a semiconductor laser is a tunable wavelength laser in the fourth embodiment according to the invention.
- FIG. 9 is an outlined view showing the outline of a transceiver module structure using a semiconductor optical integrated device described for the first, second, or third embodiment in a fifth embodiment of the invention.
- FIG. 10 is a schematic view constituting a terminal of an optical communication system by an optical transceiver package mounting an optical transmission module and an optical receiving module prepared separately according to the invention described for the fifth embodiment in a sixth embodiment of the invention.
- This embodiment concerns an RWG-EA/DFB(DBR).
- a quantum well structure 2 comprising an InGaAlAs-based material as an electro-absorption optical modulation region is formed by an MOCVD method above an n-InP type substrate 1 ( FIG. 5A ).
- an optical confinement structure sufficient for extinction can be formed by alternately stacking quantum wells and barrier layers by about 10 layers.
- etching is conducted as far as the surface of the n-InP substrate 1 while leaving a predetermined length of an electro-absorption optical modulator ( FIG. 5B ).
- the etching technique for the semiconductor layer having In, Ga, Al, As is described specifically, for example, in JP-A No. 2005-150181.
- a quantum well structure 3 including an InGaAlAs-based material forming a semiconductor laser portion by an MOCVD method ( FIG. 5 c ).
- an optical confinement structure suitable to laser oscillation can be formed by alternately stacking quantum wells and barrier layers by about 8 layers.
- etching is conducted as far as the surface of the n-InP substrate 1 while leaving predetermined length of the electro-absorption optical modulator and the semiconductor laser portion so as not to give undesired effects on the electro-absorption optical modulator portion 2 and the semiconductor laser portion 3 ( FIG. 5D ).
- a portion between the electro-absorption optical modulator portion 2 and the semiconductor laser portion 3 , and a portion between a light emitting edge and the electro-absorption optical modulator portion 2 are etched simultaneously as shown in the drawing.
- the etching technique is described specifically in JP-A No. 2005-150181.
- an optical waveguide layer 4 comprising an InGaAsP-based material is formed between the electro-absorption optical modulator portion 2 and the semiconductor laser portion 3 described above. Further, an optical waveguide layer 4 ′ comprising an InGaAsP-based material is formed between the light emitting edge and the electro-absorption optical modulator portion 2 ( FIG. 5E ).
- a structure formed, for example, by stacking an InGaAsP grown layer of 200 nm thickness and 1300 nm compositional wavelength successively to an InGaAsP bulk grown layer of 100 nm thickness and 1150 nm compositional wavelength, and further stacking an InGaAsP bulk grown layer of 100 nm thickness and 1150 nm compositional wavelength is preferred.
- an optical waveguide layer with less optical loss can be formed.
- a diffraction grating is formed by etching above the quantum well structure 3 comprising an InGaAlAs-based material forming the semiconductor laser portion 3 ( FIG. 5F ).
- a semiconductor with a refractive index higher than that of InP is preferred.
- an InGaAsP grown layer of 30 nm thickness and 1150 nm compositional wavelength is preferred.
- pattern formation to a resist by a holographic exposure method or an electron beam drawing method and a wet or dry etching process as known techniques may be combined.
- stripes at about 240 nm distance may be formed in the direction perpendicular to a mesa (direction crossing the extending direction of each trapezoidal portion). This can provide a stable longitudinal single mode oscillation suitable to optical communication
- a portion of the optical waveguide layer 4 ′ comprising an InGaAsP-based material between the light emitting edge and the electro-absorption optical modulator portion 2 on the side of the light emitting edge formed in FIG. 5E is etched as far as the n-InP substrate 1 to form a window structure 6 ( FIG. 5G ).
- a p-InP layer 7 and a p + contact layer 8 are formed by an MOCVD method ( FIG. 5H ). Then, the p + contact layer 8 and the p-InP layer 7 is etched as far as the surface of the quantum well structure 2 comprising the InGaAlAs-based material forming the electro-absorption optical modulator, the quantum well structure 3 , the optical waveguide layer 4 , and the optical waveguide layer 4 ′ comprising the InGaAlAs-based material forming the semiconductor laser portion except for the portion forming the ridge waveguide to form a mesa waveguide structure 9 .
- stable transverse single mode oscillation suitable to optical communication is obtained by defining the mesa width to about 2 ⁇ m.
- the p + contact layer 8 is removed by etching while leaving a desired portion ( FIG. 5I ).
- the silicon oxide film 10 is removed only for the top surface of the mesa waveguide 9 for the semiconductor laser portion 3 and the electro-absorption optical modulator portion 2 ( FIG. 5J ). While the silicon oxide film is used in this embodiment, a silicon nitride film or the like may also be used instead.
- the wafer is planarized with a polyimide resin 11 conforming the top surface of the mesa waveguide 9 removed with the silicon oxide film 10 ( FIG. 5K ).
- a p-electrode 12 for the optical modulator portion and a p-electrode 13 for the semiconductor laser portion are formed.
- the electrode material known Ti and Au may be stacked successively.
- an n-electrode 14 is formed at the back surface of the n-InP substrate 1 .
- known AuGe, Ti, and Au may be stacked successively ( FIG. 5L ).
- the device After forming the electrode, the device is cut out by cleaving to form a reflection film at a reflectance of about 90% on the rear edge and a low reflection film at a reflectance of 1% or less is formed on the front edge.
- a reflection film at a reflectance of about 90% on the rear edge
- a low reflection film at a reflectance of 1% or less is formed on the front edge.
- such films are not illustrated.
- a ridge waveguide type semiconductor optical integrated device in which the EA modulator portion and the DFB laser portion are integrated on one identical substrate can be prepared.
- the order of crystal growth of the electro-absorption optical modulator portion 2 , the optical waveguide portion 4 , the optical waveguide portion 4 ′, and the semiconductor laser portion 3 is not restricted thereto.
- the obtained device structure does not change even when the DFB laser portion is formed initially.
- the quantum well structure may comprises InGaAlAs, InGaAsP, InGaAs or GaInNAs for the well layer and the barrier layer may comprise InGaAlAs, InAlAs, or GaInNAs.
- InGaAsP or GaInNAs-based material may also be used instead of the InGaAlAs-based material.
- the InGaAlAs-based material or GaInNAs-based material may also be used instead of the InGaAsP-based material.
- formation of the optical waveguide layer 4 and the optical waveguide layer 4 ′ in FIG. 5E is not necessarily conducted simultaneously but this is convenient since the number of cycles for crystal growth is reduced. Further, the optical waveguide layer 4 between the electro-absorption optical modulation portion 2 and the semiconductor layer portion 3 is not always necessary.
- the crystal growth method is not always restricted to the MOCVD method but it may be formed by an MBE method or the like.
- the electro-absorption optical modulator portion 2 , the optical waveguide portion 4 , the optical waveguide portion 4 ′, and the semiconductor laser portion 3 may be formed by a crystal growth step for once using a selective area growth method.
- the material for planarizing the wafer is not restricted to the polyimide. Furthermore, planarization by the polyimide or the like is not always necessary.
- a ridge waveguide type semiconductor optical integrated device of the first embodiment By applying a forward bias to the p-electrode 13 for the semiconductor laser portion, laser oscillation is obtained. In this case, since a light undergoes periodical feedback by the diffraction grating 5 , the oscillation spectrum becomes a single mode. The laser light passes through the optical waveguide 4 and is incident to the electro-absorption optical modulation portion 2 . By applying a reverse bias to the p-electrode 12 for the optical modulation portion, the laser light is absorbed. The light can be turned on and off (transmission and absorption) by turning the application of the reverse bias voltage to off and on.
- the laser light passing the electro-absorption optical modulation portion 2 emits to the outside of the device passing through the optical waveguide 4 ′ and the window structure 6 disposed between the electro-absorption optical modulation portion 2 and the window structure 6 .
- an EA/DFB laser device (element) with the optical feedback at the light emitting edge being reduced can be obtained.
- the optical feed back at the light emitting edge can be further decreased by forming a curved waveguide 9 ′ having an optical axis thereof in a curved shape from the vicinity of the junction portion between the semiconductor laser portion 3 and the optical waveguide 4 to the light emitting edge upon forming the mesa waveguide 9 described in FIG. 5I .
- FIG. 6 shows a perspective view of a curved waveguide type semiconductor optical integrated device. Since the method of manufacturing the curved waveguide type semiconductor optical integrated device is not different at all from the method described for FIG. 5A to FIG. 5L except for the shape of the waveguide 9 ′ formed in FIG. 5I as described above, detailed description is to be omitted.
- This embodiment concerns a BH type EA/DFB(DBR).
- FIG. 7A shows a perspective view
- FIG. 7B shows a perspective view showing a cross section taken along a central portion according to an embodiment of a semiconductor optical integrated device applied with the invention.
- a quantum well structure 2 comprising an InGaAlAs-based material as an electro-absorption optical modulator is formed by an MOCVD method above an n-InP type substrate 1 .
- an optical confinement structure sufficient for extinction can be formed by alternately stacking quantum wells and barrier layers by about 10 layers. Successively, etching is conducted as far as the surface of the n-InP substrate 1 while leaving a predetermined length of an electro-absorption optical modulator. The step is identical with the state shown in FIG. 5A and FIG. 5B .
- a quantum well structure 3 comprising an InGaAlAs-based material forming a semiconductor laser portion.
- an optical confinement structure suitable to laser oscillation can be formed by alternately stacking quantum wells and barrier layers by about 8 layers.
- etching is conducted as far as the surface for the n-InP substrate 1 while leaving a desired length of the electro-absorption optical modulator and the semiconductor laser portion so as not to give undesired effect on the electro-absorption optical modulator portion 2 and the semiconductor laser portion 3 .
- the step is identical with the state shown in FIG. 5C and FIG. 5D .
- an optical waveguide layer 4 comprising an InGaAsP-based material is formed between the electro-absorption optical modulator portion and the semiconductor laser portion and an optical waveguide layer 4 ′ also comprising the InGaAsP-based material is formed between the light emitting edge and the electro-absorption optical modulator.
- the optical waveguide layer it is desirable, for example, a structure of stacking an InGaAsP growing layer of 200 nm thickness and 1300 nm compositional wavelength successively to an InGaAsP bulk grown layer of 100 nm thickness and 1150 nm compositional wavelength and further stacking an InGaAsP bulk grown layer of 100 nm thickness and 1150 nm compositional wavelength.
- an optical waveguide layer of less optical loss can be formed. The step is identical with the state shown in FIG. 5E .
- a diffraction grating 5 is formed by etching above the quantum well structure 3 comprising an InGaAlAs-based material forming the semiconductor laser portion 3 .
- a semiconductor with a refractive index higher than that of InP is preferred.
- an InGaAsP grown layer of 30 nm thickness and 1150 nm compositional wavelength is preferred.
- pattern formation to a resist by a holographic exposure method or an electron beam drawing method and a wet or dry etching process as known techniques may be combined.
- stripes at about 240 nm distance may be formed in the direction perpendicular to a mesa. This can provide a stable longitudinal single mode oscillation suitable to optical communication.
- the step is identical with the state shown in FIG. 5F .
- a portion of the optical waveguide layer 4 ′ comprising an InGaAsP-based material between the light emitting edge and the electro-absorption optical modulator on the side of the light emitting edge is etched as far as the n-InP substrate 1 to form a window structure 6 .
- the step is identical with the state shown in FIG. 5G .
- a p-InP layer 7 and a p + contact layer 8 are formed by an MOCVD method.
- the step is identical with the step shown in FIG. 5H .
- etching is conducted as far as the n-InP substrate 1 to form a ridge portion (high mesa structure) 9 .
- the p + contact layer 8 is removed by etching while leaving a desired portion.
- the state is substantially identical with that in FIG. 5I . Since etching is conducted as far as the n-InP substrate 1 in the third embodiment, it is different from FIG.
- ridge portion 9 stands upright above the substrate 1 , and the window structure 6 , the quantum well structure 2 , the optical waveguide layer 4 , the optical waveguide layer 4 ′ and the quantum well structure 3 with the diffraction grating 5 being formed upward are formed only to the base of the ridge portion 9 .
- a stable transverse single mode oscillation suitable to optical communication is obtained by defining the ridge width to about 2 ⁇ m.
- a semi-insulating InP layer 15 is grown on both sides of the ridge portion 9 by an MOCVD method to form a buried-hetero structure.
- a silicon oxide film 10 is formed over the entire surface by a CVD method and the silicon oxide film 10 is removed only at the region forming the p-electrode 12 for the optical modulator portion and the p-electrode 13 for the semiconductor layer portion in the ridge portion 9 of the semiconductor light emitting device and the electro-absorption optical modulator portion. While the silicon oxide film is used in the second embodiment, a silicon nitride film or the like may also be used alternatively.
- the p-electrode 12 for the optical modulator portion and the p-electrode 13 for the semiconductor laser portion are formed.
- the electrode material known Ti and Au may be stacked successively.
- an n-electrode 14 is formed at the back surface of the n-InP substrate 1 .
- the electrode material known AuGe, Ti, and Au may be stacked successively.
- a buried-hetero (BH) type semiconductor optical integrated device in which the electro-absorption optical modulator portion 2 and the semiconductor laser portion 3 are integrated on one identical substrate can be prepared.
- the order of crystal growth of the electro-absorption optical modulator portion 2 , the optical waveguide layer 4 , the optical waveguide layer 4 ′, and the semiconductor laser portion 3 is not restricted thereto.
- the obtained device structure does not change even when the DFB laser portion is formed initially.
- the quantum well structure may comprises InGaAlAs, InGaAsP, InGaAs or GaInNAs for the well layer and the barrier layer may comprise InGaAlAs, InAlAs, or GaInNAs.
- the material for the semiconductor laser portion InGaAsP-based material or GaInNAs-based material may also be used instead of the InGaAlAs-based material.
- the InGaAlAs-based material or GaInNAs-based material may also be used instead of the InGaAsP-based material.
- optical waveguide layer 4 and the optical waveguide layer 4 ′ in FIG. 5E are not necessarily conducted simultaneously but this is convenient since the number of cycles for crystal growth is reduced. Further, the optical waveguide layer 4 between the electro-absorption optical modulator and the semiconductor layer portion is not always necessary.
- the crystal growth method is not always restricted to the MOCVD method but it may be formed by an MBE method or the like.
- the electro-absorption optical modulator portion 2 ′, the optical waveguide layer 4 , the optical waveguide layer 4 ′, and the semiconductor laser portion 3 may be formed by a crystal growth step for once using a selective area growth method.
- the material for planarizing the wafer is not restricted to the polyimide. Furthermore, planarization is not always necessary.
- the operation method of the semiconductor optical integrated device according to the third embodiment is identical for the first embodiment.
- the manufacturing method and the operation method of the curved waveguide type semiconductor optical integrated device in the BH structure described for the third embodiment may be reduced easily from the first and the second embodiments.
- This embodiment concerns an RWG-EA/tunable wavelength LD.
- FIG. 8A shows a perspective view
- FIG. 8B shows a perspective view showing a cross section taken along a central portion of a constitution according to an embodiment of a semiconductor optical integrated device constituted as wavelength tunable LD by applying the invention.
- a quantum well structure 2 comprising an InGaAlAs-based material as an electro-absorption optical modulator is formed by an MOCVD method above an n-InP type substrate 1 .
- an optical confinement structure sufficient for extinction can be formed by alternately stacking quantum wells and barrier layers by about 10 layers. Successively, etching is conducted as far as the surface of the n-InP substrate 1 while leaving a predetermined length of an electro-absorption optical modulator 2 .
- the step is identical with the state shown in FIG. 5A and FIG. 5B .
- a quantum well structure 3 comprising an InGaAlAs-based material forming a semiconductor laser portion.
- An optical confinement structure suitable to laser oscillation can be formed by alternately stacking quantum wells and barrier layers by about 8 layers.
- etching is conducted as far as the surface of the n-InP substrate 1 while leaving a desired length of the electron-absorption optical modulator portion 2 and the active resin 16 and a phase control region 17 by the quantum well structure 3 so as not to give undesired effect on the electro-absorption optical modulator portion 2 and the semiconductor laser portion 3 . While the step is identical with the state shown in FIGS.
- the optical waveguide layer 4 comprising the InGaAsP-based material and the optical waveguide layer 4 ′ also comprising the InGaAsP-based material are formed between the light emitting edge and the electro-absorption optical modulator portion 2 to a portion between the electro-absorption optical modulator portion 2 and the predetermined length of the active region 16 by the quantum well structure 3 and in the region adjacent with the desired length of the phase control region 17 by the quantum well structure 3 .
- the optical waveguide layer 4 and the optical waveguide layer 4 ′ it is desirable a structure formed by stacking, for example, an InGaAsP grown layer of 200 nm thickness and 1300 nm compositional wavelength successively to the InGaAsP bulk growing layer of 100 nm thickness and 1150 nm compositional wavelength and, further, stacking an InGaAsP bulk grown layer of 100 nm thickness and 1150 nm compositional wavelength.
- an optical waveguide layer of less optical loss can be formed.
- a diffraction grating 5 is formed by etching to a desired region of the optical waveguide layer 4 comprising an InGaAsP-based material of a region adjacent with the phase control region 17 , to form a distribution reflection type region 18 .
- pattern formation to a resist by holographic exposure method or an electron beam drawing method and a wet or dry etching step as known techniques may be combined.
- a portion of the optical waveguide layer 4 ′ comprising the InGaAsP-based material between the light emitting edge and the electro-absorption optical modulator portion 2 is etched as far as the n-InP substrate 1 to form a window structure 6 .
- the step is identical with the state shown in FIG. 5G .
- a p-InP layer 7 and a p + -contact layer 8 are formed by an MOCVD method.
- the step is identical with the step shown in FIG. 5H .
- a ridge waveguide structure 9 is formed by etching the p + contact layer 8 and the p-InP layer 7 as far as the surface of the quantum well structure 2 comprising the In, Ga, Al, As-based material forming the electro-absorption optical modulator, and the quantum well structure 3 comprising the In, Ga, Al, As-based material forming the semiconductor laser portion, the optical waveguide layer 4 , and the optical waveguide layer 4 ′.
- the p + contact layer 8 is removed by etching while leaving the desired portion.
- the step is identical with the state shown in FIG. 5I .
- a stable transverse single mode oscillation suitable to optical communication is obtained by defining the mesa width to about 2 ⁇ n.
- a silicon oxide film 10 is formed over the entire surface by a CVD method. Then, the silicon oxide film 10 at the top of the mesa waveguide 9 is removed from a position corresponding to the p electrode 12 for the modulation portion, the p-electrode 19 for the active region, p electrode 20 for the phase control region, and the distribution reflection type region 21 to be described later.
- a silicon nitride film or the like may also be used alternatively. The step is identical with the state shown in FIG. 5J .
- the wafer is planarized by the polyimide resin 11 to the height for the top surface of the mesa waveguide 9 removed with the silicon oxide film 10 .
- the step is identical with the state shown in FIG. 5K .
- the p-electrode 12 for the optical modulator, the p-electrode 19 for the active region, the p-electrode 20 for the phase control region, and the p-electrode 21 for the distribution reflection type region are formed.
- the electrode material known Ti and Au may be stacked successively.
- an n-electrode 14 is formed at the back surface of the n-InP substrate 1 .
- known AuGe, Ti, Au may also be stacked successively.
- the device After forming the electrode, the device is cut out by cleaving to form a reflection film at a reflectance of about 90% on the rear edge and a reflection film of low reflectance of 1% or less on the front edge. Such films are not illustrated in the drawing.
- the step is identical with that shown in FIG. 5L .
- a ridge waveguide type semiconductor optical integrated device in which the electro-absorption optical modulator portion 2 and the tunable wavelength laser portion 3 are integrated on one identical substrate can be prepared.
- the order of crystal growth for the electro-absorption optical modulator portion 2 , the optical waveguide layer 4 , the optical waveguide layer 4 ′, and the tunable wavelength laser portion 3 is not restricted thereto.
- the quantum well structure may comprise InGaAlAs, InGaAsP, InGaAs or GaInNAs for the well layer, and InGaAlAs, InAlAs, or GaInNAs for the barrier layer.
- an InGaAsP-based material or GaInNAs-based material may be used instead of the InGaAlAs-based material
- an InGaAlAs-based material or GaInNAs-based material may also be used instead of the InGaAsP-based material.
- the crystal growth method is not always restricted to the MOCVD method, but the portion may be formed, for example, by the MBE method.
- the electro-absorption optical modulator portion 2 , the optical waveguide layer 4 , the optical waveguide layer 4 ′ and the tunable wavelength laser portion 3 may be formed by the crystal growth step only for once by using selective area growing method. Further, also the manufacturing method of the buried-hetero (BH) integrated device can also be deduced easily from the first and third embodiments. Further, the material for planarizing the wafer is not always restricted to the polyimide. Further, planarization by the polyimide or the like is not always necessary.
- Laser oscillation is obtained by applying a forward bias to the p-electrode 19 for the active region.
- the oscillation spectrum is a single mode.
- the Bragg's reflection condition can be changed to change the laser oscillation wavelength by supplying a current in the p electrode 21 for the distribution reflection region. Further, a continuous wavelength variation with no mode hop can be attained by supplying a current to the p-electrode 20 for the phase control region. Further, it will be deduced easily that use in a wider wavelength band is also possible by forming the tunable wavelength laser in an array form.
- modification method of the laser light in the fourth embodiment may also be deduced easily based on the first embodiment.
- the manufacturing method and the operation method of the curved waveguide device in the EA/tunable wavelength laser integrated structure described in the fourth embodiment can also be deduced easily based on the first and second embodiments.
- This embodiment concerns a module using an EA/DFB having a novel window structure.
- a preferred embodiment of a transceiver module using the semiconductor optical integrated device described with reference to first, second, or third embodiment is to be described with reference to FIG. 9 .
- the drawing is only for description of this embodiment and the size of the drawing and the reduction scale described in this embodiment do not always agree with each other.
- a small-sized optical transmission module in which a semiconductor optical integrated device 23 formed by integrating the laser portion 32 and the electro-absorption optical modulator 33 according to the invention is mounted on an internal substrate 22 ′.
- a lens 26 is held by a lens support 27 ′ at the top end of the module 22 .
- the semiconductor optical integrated device 23 and the lens 26 are arranged such that the optical axis of light generated by the laser portion 32 is aligned therewith.
- a thermistor 24 is disposed near the semiconductor optical integrated device 23 on the internal substrate 22 ′ to output a signal for the temperature in the module.
- a light receiving element 25 for monitoring is disposed behind the semiconductor optical integrated device 23 to detect an optical output by the light leaked behind the laser portion 32 .
- a control device 31 is disposed adjacent with the small-sized optical transmission module 22 and the control device 31 is provided with an optical modulator control circuit 34 and an optical laser control circuit 35 .
- Lead lines 29 are disposed between the small-sized optical transmission module 22 and the control device 31 for transmitting and receiving necessary signals between both of them. Further, 30 denotes wires for connecting the lead lines 29 with respective devices.
- a high frequency line 28 gives a signals from the optical modulator control circuit 34 to the optical modulator 33 .
- the electric signals in accordance with the intensity of light incident to the light receiving device 25 for monitoring are sent by way of the wire 30 and the leads 29 to the optical laser control circuit 35 of the control device 31 to apply a feed back control to the value of current flowing to the laser portion 32 of the semiconductor optical integrated device 23 so as to obtain a desired optical output.
- the semiconductor light emitting device formed by using this technique can be used as an optical transmitter by monitoring the temperature in the small-sized optical transmission module 22 by the thermistor 24 to control the optical modulator 33 and by monitoring the operation temperature of the laser portion 32 by the light receiving element 25 for monitoring to control the laser portion 32 .
- the control circuit and the device constituting the module are connected by way of wires and lead lines, they may also be integrated monolithically in one identical chip.
- a high speed optical signals suitable for size reduction and reduction of power consumption and for long distance transmission can be prepared easily.
- description for the wavelength tunable semiconductor optical integrated device is omitted.
- This embodiment concerns an optical communication system.
- FIG. 10 is a schematic view constituting the terminal of an optical communication system by an optical transceiver package mounting an optical transmission module of the invention described in FIG. 9 and an optical receiving module prepared separately.
- an optical transceiver package 36 a small-sized transmission module 37 , an optical transmission module driving circuit 39 , a small-sized receiving module 38 , an optical receiving module driving circuit 40 , and optical fibers 41 and 42 . They are disposed corresponding to the small-size transmission module 37 and the optical receiving module 38 .
Abstract
Description
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